2013 Sensing behavior of solid-state impedancemetric NOx sensor using solid

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聚合物基力致变色材料的研究进展

464
中国材料进展
第 40 卷
而伴随着材料光谱性质的变化。这类力致变色聚合物的优点是无需合成新的聚合物就可以获得新的性能, 且体系中大分子的化学结构在受力前后保持不变。染料-聚合物共价连接型力致变色材料中力致变色单元是通过共价键连接到聚合物的分子链上。机械刺激会诱使染料分子发生原子尺度选择性化学转变进而导致材料光学性质的变化。这里的染料分子常被称为力致变色基团, 其需要被恰当地引入至聚合物链中。且力致变色基团中一般存在不稳定的化学键, 在其受到机械刺激时能够通过异构化或断键反应改变分子的光学性质[8, 9] 。
第 40 卷第 6 期
2021 年 6 月
中国材料进展
MATERIALS CHINA
Vol . 40 No . 6 Jun. 2021
聚合物基力致变色材料的研究进展
汪太生, 葛园梦, 王毓荣, 张娜
( 南京工程学院材料科学与工程学院, 江苏南京 211167)
摘要: 近期, 通过光学性质的变化来检测机械应力的力致变色材料引起了人们广泛的研究兴趣。这种材料可以利用机械能
促使高分子链内部的化学或物理结构发生转变, 因此在力学传感、自愈合材料等领域具有巨大的应用价值。总结了有关力致变色聚合物材料的发展现状, 详细讨论了两种力致变色聚合物材料的制备方法。第一种方法中, 染料分子是通过物理共混的方法分散于高分子基体中, 高分子基体受力变形时, 微观聚集的染料分子会分散开来, 使材料表现出不同于之前的光学性质。第二种方法则是通过化学键将力致变色基团共价连接至高分子主链或侧链上, 机械刺激会诱使力致变色基团发生原子尺度的选择性化学转变并进而导致材料光学性质的变化。最后, 评述了目前这类功能高分子材料所面临的问题并对其未来的发展趋势做出了展望。

Instruction Manual for Self-Contained, AC-Operated

Instruction ManualSelf-Contained, AC-Operated Sensors•Featuring EZ-BEAM ® technology, the specially designed optics and electronics provide reliable sensing without the need for adjustments •30 mm plastic threaded barrel sensor in opposed, retroreflective, or fixed-field sensing modes•Completely epoxy-encapsulated to provide superior durability, even in harsh sensing environments rated to IP69K•Innovative dual-indicator system takes the guesswork out of sensor performance monitoring•20 V ac to 250 V ac (3-wire hookup); SPST solid-state switch output,maximum load 300 mAWARNING: Not To Be Used for Personnel ProtectionNever use this device as a sensing device for personnel protection. Doing so could lead to serious injury or death. This device does not include the self-checking redundant circuitry necessary to allow its use in personnel safety applications. A sensor failure or malfunction can cause either an energized or de-energized sensor output condition.ModelsFixed-Field Mode OverviewS30 Sensor self-contained fixed-field sensors are small, powerful, infrared diffuse mode sensors with far-limit cutoff (a type of background suppression). Their high excess gain and fixed-field technology allow detection of objects of low reflectivity, while ignoring background surfaces.The cutoff distance is fixed. Backgrounds and background objects must always be placed beyond the cutoff distance.•9 m (30 ft) cable: add suffix "W/30" (for example, S303E W/30).•4-pin Micro-style QD models: add suffix "Q1" (for example, S303EQ1). A model with a QD connector requires a mating cable.S30 Sensors AC-Voltage SeriesOriginal Document121519 Rev. A30 December 2015121519Fixed-Field Sensing – Theory of OperationThe S30FF compares the reflections of its emitted light beam (E) from an object back to the sensor’s two differently aimed detectors, R1 and R2. See Figure 1 on page 2. If the near detector's (R1) light signal is stronger than the far detector's (R2) light signal (see object A in the Figure below, closer than the cutoff distance), the sensor responds to the object. If the far detector's (R2) light signal is stronger than the near detector's (R1) light signal (see object B in the Figure below,beyond the cutoff distance), the sensor ignores the object.The cutoff distance for model S30FF sensors is fixed at 200, 400, or 600 millimeters (7.9 in, 16.7 in, or 23.6 in). Objects lying beyond the cutoff distance are usually ignored, even if they are highly reflective. However, under certain conditions,it is possible to falsely detect a background object (see Background Reflectivity and Placement on page 2).or Cutoff Near Detector FarDetectorEmitter Object is sensed if amount of light at R1 is greater than the amount of light at R2Figure 1. Fixed-Field Concept Figure 2. Fixed-Field Sensing AxisIn the drawings and information provided in this document, the letters E, R1, and R2 identify how the sensor’s three optical elements (Emitter “E”, Near Detector “R1”, and Far Detector “R2”) line up across the face of the sensor. Thelocation of these elements defines the sensing axis, see Figure 2 on page 2. The sensing axis becomes important in certain situations, such as those illustrated in Figure 5 on page 3 and Figure 6 on page 3.Device SetupSensing ReliabilityFor highest sensitivity, position the target object for sensing at or near the point of maximum excess gain. Maximum excess gain for all models occurs at a lens-to-object distance of about 40 mm (1.5 in). Sensing at or near this distance makes the maximum use of each sensor’s available sensing power. The background must be placed beyond the cutoff distance. Note that the reflectivity of the background surface also may affect the cutoff distance. Following these guidelines will improve sensing reliability.Background Reflectivity and PlacementAvoid mirror-like backgrounds that produce specular reflections. A false sensor response occurs if a background surface reflects the sensor’s light more to the near detector (R1) than to the far detector (R2). The result is a false ON condition (Figure 3 on page 3). To correct this problem, use a diffusely reflective (matte) background, or angle either the sensor or the background (in any plane) so the background does not reflect light back to the sensor (Figure 4 on page 3).Position the background as far beyond the cutoff distance as possible.An object beyond the cutoff distance, either stationary (and when positioned as shown in Figure 5 on page 3), ormoving past the face of the sensor in a direction perpendicular to the sensing axis, may cause unwanted triggering of the sensor if more light is reflected to the near detector than to the far detector. The problem is easily remedied by rotating the sensor 90° (Figure 6 on page 3). The object then reflects the R1 and R2 fields equally, resulting in no false triggering. A better solution, if possible, may be to reposition the object or the sensor. - Tel: +1-763-544-3164P/N 121519 Rev. ACutoff Highly Reflective BackgroundFigure 3. Reflective Background - ProblemR1 = Near Detector R2 = Far Detector E = EmitterCutoff DistanceFigure 4. Reflective Background - SolutionR1 = Near Detector R2 = Far Detector E = EmitterCutoff Reflective BackgroundorMoving ObjectA reflective background object in this position or moving across the sensor face in this axis and direction may cause false sensor response.Figure 5. Object Beyond Cutoff - ProblemE = EmitterR1 = Near Detector R2 = Far DetectorCutoff A reflective background object in this position or moving across thesensor face in this axis will be ignored.Figure 6. Object Beyond Cutoff - SolutionColor SensitivityThe effects of object reflectivity on cutoff distance, though small, may be important for some applications. It is expected that at any given cutoff setting, the actual cutoff distance for lower reflectance targets is slightly shorter than for higher reflectance targets. This behavior is known as color sensitivity.For example, an excess gain of 1 for an object that reflects 1/10 as much light as the 90% white card is represented by the horizontal graph line at excess gain = 10. An object of this reflectivity results in a far limit cutoff of approximately 190mm (7.5 in) for the 200 mm (8 in) cutoff model, for example; 190 mm represents the cutoff for this sensor and target.These excess gain curves were generated using a white test card of 90% reflectance. Objects with reflectivity of less than 90% reflect less light back to the sensor, and thus require proportionately more excess gain in order to be sensed with the same reliability as more reflective objects. When sensing an object of very low reflectivity, it may be especially important to sense it at or near the distance of maximum excess gain.P/N 121519 Rev. A - Tel: +1-763-544-31643SpecificationsSupply Voltage and Current20 av V to 250 V ac (50 Hz to 60 Hz)Average current: 20 mA Peak current:200 mA at 20 V ac 500 mA at 120 V ac 750 mA at 250 V acSupply Protection CircuitryProtected against transient voltagesOutput ConfigurationSPST solid-state ac switch; three-wire hookup; light operate or dark operate, depending on modelLight Operate: Output conducts when sensor sees its own (or the emitter’s) modulated lightDark Operate: Output conducts when the sensor sees darkRequired Overcurrent ProtectionWARNING: Electrical connections must be made by qualified personnel in accordance with local and national electrical codes and regulations.Overcurrent protection is required to be provided by end product application per the supplied table.Overcurrent protection may be provided with external fusing or via Current Limiting, Class 2 Power Supply.Supply wiring leads < 24 AWG shall not be spliced.For additional product support, go to .Output Rating300 mA maximum (continuous)Fixed-Field models: derate 5 mA/°C above +50° C (+122° F)Inrush capability: 1 amp for 20 ms, non-repetitive OFF-state leakage current: < 100 mAON-state saturation voltage: 3 V at 300 mA ac; 2 V at 15 mA ac Output Protection CircuitryProtected against false pulse on power-up Output ResponseTime Opposed mode: 16 ms ON, 8 ms OFF Other models: 16 ms ON and OFFNOTE: 100 ms delay on power-up; outputs do not conduct during this time.RepeatabilityOpposed mode: 2 ms Other models: 4 msRepeatability and response are independent of signal strength IndicatorsTwo LEDs (Green and Yellow)Green ON steady: power to sensor is ON Yellow ON steady: sensor sees lightYellow flashing: excess gain marginal (1 to 1.5 times) in light condition ConstructionPBT polyester housing; polycarbonate (opposed-mode) or acrylic lens Environmental RatingLeakproof design rated NEMA 6P, DIN 40050 (IEC IP69K)Connections2 m (6.5 ft) attached cable, or 4-pin Micro-style quick-disconnect fitting Operating ConditionsTemperature: −40 °C to +70 °C (−40 °F to +158 °F)Humidity: 90% at +50 °C maximum relative humidity (non-condensing)Vibration and Mechanical ShockAll models meet Mil. Std. 202F requirements. Method 201A (Vibration;frequency 10 Hz to 60 Hz, max., double amplitude 0.06 inchacceleration 10G). Method 213B conditions H&I. (Shock: 75G with unit operating; 100G for non-operation)CertificationsPerformance CurvesTable 1: Opposed Mode Sensors - Tel: +1-763-544-3164P/N 121519 Rev. ATable 2: Polarized Retro Mode Sensors2Table 3: Fixed-Field Mode Sensors Excess Gain33Performance based on use of a 90% reflectance white test card. Focus and spot sizes are typical.P/N 121519 Rev. A - Tel: +1-763-544-31645DimensionsCabled ModelsYellow LEDQD ModelsWiring DiagramsCabled Emittersbn bu20-250V acQD Emitters (4-pin Micro-Style)All Other Cabled ModelsAll Other QD Models (4-pin Micro-Style)CordsetsAll measurements are listed in millimeters (inches), unless noted otherwise. - Tel: +1-763-544-3164P/N 121519 Rev. ABanner Engineering Corp. Limited WarrantyBanner Engineering Corp. warrants its products to be free from defects in material and workmanship for one year following the date of shipment. Banner Engineering Corp. will repair or replace, free of charge, any product of its manufacture which, at the time it is returned to the factory, is found to have been defective during the warranty period. This warranty does not cover damage or liability for misuse, abuse, or the improper application or installation of the Banner product.THIS LIMITED WARRANTY IS EXCLUSIVE AND IN LIEU OF ALL OTHER WARRANTIES WHETHER EXPRESS OR IMPLIED (INCLUDING, WITHOUT LIMITATION, ANY WARRANTY OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE), AND WHETHER ARISING UNDER COURSE OF PERFORMANCE, COURSE OF DEALING OR TRADE USAGE.This Warranty is exclusive and limited to repair or, at the discretion of Banner Engineering Corp., replacement. IN NO EVENT SHALL BANNER ENGINEERING CORP. BE LIABLE TO BUYER OR ANY OTHER PERSON OR ENTITY FOR ANY EXTRA COSTS, EXPENSES, LOSSES, LOSS OF PROFITS, OR ANY INCIDENTAL, CONSEQUENTIAL OR SPECIAL DAMAGES RESULTING FROM ANY PRODUCT DEFECT OR FROM THE USE OR INABILITY TO USE THE PRODUCT, WHETHER ARISING IN CONTRACT OR WARRANTY, STATUTE, TORT, STRICT LIABILITY, NEGLIGENCE, OR OTHERWISE.Banner Engineering Corp. reserves the right to change, modify or improve the design of the product without assuming any obligations or liabilities relating to any product previously manufactured by Banner Engineering Corp. - Tel: +1-763-544-3164。

Piezomechanik Katalog

First Steps towards PiezoactionThermograph of a dynamically operated piezo stackThe intention of this paper is to give newcomers to the field of “piezo-actuation” or “piezo-mechanics”a brief overview of the topic.In discussing stack based piezo-actuators, many aspects reviewed can easily be applied to other piezo-actuation principles.For more comprehensive studies, refer to the available specialized literature.©All pictures, photos and product descriptions ar the intellectual propertyof Piezomechanik Dr. Lutz Pickelmann GmbH.Utilisation and copies by third parties have to be authorized.All rights reserved.1.■Piezo stack actuators:A survey 71.1Basic game rules71.2Characterizing piezo stack actuators9Stroke (shift) - force balances - dynamics - performance limits1.3Actuator designs 112.■Basic stack designs 122.1The piezo-mechanical effect122.2 High Voltage versus Low Voltage: a comparison 122.3Stack configurations142.4Ring stacks versus piezo tubes: a comparison 152.5Ring stacks versus bulk stacks: a comparison 162.6Advantages of PIEZOMECHANIK’s piezo stacks173. ■Precision positioning 193.1Shift versus voltage characteristic 193.2Precision positioning by piezo stacks 213.3Limits of positioning accuracy224.■Motion and Forces 234.1Beyond simple positioning 234.2 Examples for force/shift relations 244.3Piezo-actuator as an active spring 254.4Selecting a piezo stack 254.5Force generation 274.6Stiffness294.7Force limitations, load capabilities 314.8Dynamic operation314.9Mechanical preloading (pre-stress)32ContentsContents5.■Dynamic operation of piezo stacks35 5.1Definitions35 5.2Short-term excitation36 5.3Long-term operation 37 5.4Typical operating frequencies38 5.5Resonance406.■Extended functionality,options42 6.1Heat management “Thermostable”42sensing43 6.2 Temperature6.3Low temperature operation43 6.4Position sensing44 6.5Further modifications 45Enhanced mechanical preload - Vacuum operation - Rotating systems -Non-magnetic configurations - Special materials7. ■Operation instructions46 7.1Basic comment on actuator reliability46 7.2First check of a piezo-actuator47 7.3Thumb rules 48 7.4Handling and operation49Mechanical aspects - Electrical aspects - Thermal aspects7.5Adhesives - Electrical contacts - Chemistry54 7.6Further aspects56Environmental influences - Vacuum operation - Noble gases, hydrogen atmospheres -Radiation - Space-borne application8.■Properties of piezoceramics57Voltage versus Shift diagrams, hysteresis, Materials data, Temperature-related properties,Special ceramics (ultrasound ceramics, electrostriction)Contents9.■Electrical powering of piezo-actuators629.1Electrical input and piezo-mechanical reaction62Noise - Peak currents - Mean currents - Energy-/power-balances, energy dissipation -Electrostriction - Unipolar/semi-bipolar/bipolar operation9.2Alternatives: charge versus voltage control66 9.3Basic piezo amplifier functions6810.■Selecting a proper actuator6911.■New trends70 11.1Piezo action for material testing 70 11.2Motion control 7211.3Electrical energy generation73Force transducers - Energy harvesting, scavenging - Piezo transformersGlossaryActuator:Mechanical actuator is synonym for motor, motion generator, mover; often used in context with linear displacements of limited range.The term motor is commonly used for rotating dri-ves with unlimited period of unidirectional action. Smart material:Special materials providing controllable features and properties beyond the classical behaviorSolid-state materials:showing induced deformation: memory alloys, piezo-effect, magneto-strictionLiquids:electro- and magneto-rheological systems with con-trollable viscositySolid-state actuator:Based on all kinds of solid-state materials providing a controllable motion or force generation by mate-rial’s internal structure or texture (prime mover effect)Piezo-actuator:Solid-state actuator, using the inverse piezo-electri-cal effectSynonyms: piezo-translators, piezo-transducers Piezo stack actuators:Piezo stack actuators use the variation of the stack-length under electrical activation. This is in contrast to other kinds of moving profiles like shear elements or bending elements (bimorphs).Piezo-mechanics:Shorter expression than “inverse piezo-electric”describing the motor or actuator application of the piezo-effect (in contrast to the “piezo-electrical”generator effect).Smart structuresMechanical arrangements based on smart materials to control the mechanical properties of the arrange-ment e.g. by electrical means.Adaptronics:Wide cross over with “mechatronics” or “smart structures”:the science of mostly mechanical systems using “smart materials” together with a sophisticated electronics to get a kind of “learning process” and self-adaption for getting an optimum system’s behavior.Synonyms:Actuator displacement = stroke = shift = expansion = elongationStand der Piezo-Multilayer-Technik PIEZOMECHANIK7Piezo stack actuators: A survey1Fig.1.1:Schematic of a piezo-mechanical system based on a piezo stack, mounted on a solid base, moving the attached mechanics by electrically induced strain of the stack.From an electrical point of view, piezo-actuators behave like electrical capacitors:The induced motion can also be described as the consequence of the variation of the electrical char-ge content of the piezo-actuator.Piezo-actuators are based on a special smart mate-rial: The electro-active piezoceramic material,known as PZT made ofPb (lead)-Zr (zirconium)-Ti (Titanium) mixed-oxides.1.1 Basic game rulesPiezo stack actuators are used as linear electromechanical drives or motors. They act mainly like an expanding element (“pusher”) generating a compressive force. The complete motion cycle is nearly proportional to the voltage signal input from DC up to high frequencies.m o u n t i n g b a s epiezo stackmoved mechanicselectronics●The lifetime and reliability of actuators depend strongly on the wide variety of the interacting operational parameters and the conditions of the individual application.Therefore, it is impossible to define a single test procedure, applied to an isolated element for evaluating its reliability for all kinds of operations.The only strategy is system testing under a set of realistic operation conditions.Even for a working piezo-mechanical system,small alterations of the driving conditions orsystem’s design may result in the need for a new suitability evaluation.8PIEZOMECHANIK1.1 Basic game rulesDecision guidance for using piezo-technology ●Verify that piezo-actuators will benefit your application in a way that alternative solutions (e.g. magnetic actuation) cannot. Piezo-actuators will be ruled out otherwise simply for cost reasons.●Analyze your application correctly for the needed force-shift-characteristic. Pay attention to a suit-able “piezo” match of your mechanical design.Only with a well-adapted application design, you can make complete use of an actuator’s perfor-mance including the benefits of high reliability,reproducibility and long operating life.The “upgrade” of existing old-fashioned mechan-ical designs by simply replacing a conventional drive by an “innovative” piezo-actuator will usual-ly fail. Systems must be designed with the piezo-actuator in mind.●A 100% general purpose piezo-actuator, covering all kinds of applications, does not exist. Piezo-actuators are typically optimized for distinct oper-ation profiles. This degree of specialization may not explicitly be expressed in the data sheet.Therefore, care is needed when replacing suc-cessfully operating products by ones from other sources.●The product data have been derived underdistinct test conditions. The actuators may show a different behavior, when operated in a different way. The definitions of specifications for actua-tor’s performance can vary from supplier to sup-plier. Pay attention to the parameter definitions,when comparing elements from different sources.Fig.1.2 shows a solid state actuator made bystacking PZT ceramic layers, which are electrically contacted individually resulting in a multilayer ca -pacitor structure. The application of a voltage to the stack generates an electrical field within the ceramic layers resulting in a mechanical strain of the stack.The generated axial expansion of piezo stack’s length L is used for actuation. Coupling to external mechanics is done via the end faces (cross section area A).Achievable maximum strains typically range be-tween 0.1% and 0.15% of L. A piezo stack with a length L = 50 mm usually possesses a maximum stroke of 50–70 µm.The load capability and max. force generation of a piezo-actuator depend on stack’s cross section area A . The load and force limits are in the range of 7-8 kN/cm² (70-80 MPc).The mechanical work capability “stroke x force” is therefore proportional to the active ceramic volume L x A.Fig. 1.2: Piezo stack built up from individually contacted piezoceramic discs Working axis: length LActive cross section area A (mechanical coupling face).ALStroke (shift) -force balances -dynamics -performance limitsPIEZOMECHANIK91.2 Characterizing piezo stack actuatorsA10PIEZOMECHANIK1.2 Characterizing piezo stack actuatorsDynamics: (depends also on electronics)●No delay in mechanical reaction ●Very high acceleration rates●Very high mechanical power generationDesign advantages:●“Exotic” driving conditions applicable (vacuum, cryogenic temperatures etc.)●Compact design●High mechanical power density even in miniature structures (MEMS/NEMS)●Power consumption only when motion is generated.●No stand-by/no sustainer energy consumption.Specific features of piezo stack actuatorsShift:unlimited positioning sensitivity(actually proven down to the picometer range)Forces:●High load capability up to tons●High force/pressure generation (kiloNewtons) ●Superposition of high static payload and dynamic force modulation●Low mechanical compliance (high natural frequencies), solid-state body!Actuator market’s main emphasis:Shift:Typical stack lengths 2-100 mm=> shifts from µm up to approx. 100 µmForces:Stacks with small to medium sized cross sections (up to approx. 10 x 10 mm²)=> Forces ranging from Tens to several Thousands of Newtons.Low voltage actuators preferred.DynamicsDepends strongly on actuator dimensionsNon-resonant cycling with maximum strain: < 1 kHz Non-resonant cycling with reduced strain: < 10 kHzPerformance limitsExotic and expensive, mostly prototypes or singular applicationsShift:High voltage stack actuators with length > 600 mm for 1 mm shift (= 1,000 µm)Forces:Large cross section elements with diameters up to 70mm for load capabilities,blocking forces >100kN Mostly high voltage (HV) piezo stacksDynamics:Piezo shock generator < 10 µsec rise-time for 100 µm strokeAcceleration > 100.000 m/sec²Fig. 1.3: (A), (C) high voltage bulk stack and ring actuator, large cross section(B), (D), (E) low voltage bulk stack, ring actuator and ring chip1.3 Actuator designsLow voltage actuators are used for small and medium cross section (1 mm 2up to approx. 14 x 14 mm 2) fig.1.3: B.High voltage actuators cover needs for larger stack cross sections (fig.1.3: A, C).Ring actuators offer a wider range of design-options for piezo-mechanical assemblies (fig.1.3: C, D, E).Manufacturing of ring actuators is more elaborate and expensive than for bulk stacks.A B C DEPiezo stack actuators are electrical multilayer capacitors, whose outer dimensions vary when the electrical charge status is changed. Usually the axial strain is used for actuation purposes.The mechanical reaction like shift and force balance depends on the applied internal electrical field (typical values up to 2 kV/mm).To get the above stated levels of field strength with acceptable voltage levels (100 V to 1000 V), the individual layer thickness of the multilayer stack will be adapted accordingly (e.g. 0.5 mm for a 1000 V high voltage actuator (fig.1.2)).Two completely different stacking techniques are used for low and high voltage stack actuators:●Low voltage actuators (ͨ 200 V): ceramic layersand internal metal electrode layers are stackedbefore the final high temperature sintering, while the ceramic is in the soft (green) state. The inter-nal electrodes are a very thin metal film (thick-ness 1 µm) and are made e.g. of AgPd-alloy orCu. This kind of actuator technique is often called as “monolithic cofiring”.●High voltage actuators for voltage ranges ofapprox. 500 V up to 1000 V are made from com-pletely sintered and finished individual PZT discs or plates prior to stacking. The inserted layerelectrodes are made from separate thin metalfoils. The whole arrangement is fixed together bya special high quality adhesive. Therefore HVactuators are not a ceramic monolith, but a kindof composite material. Fig. 2.1: High voltage stack(black,left) and low voltage stack (green, right), mouse and USB stick for size comparison.2.1 The piezo-mechanical effect Basic stack designs2 2.2 High Voltage versus Low Voltage:a comparison2.2 High Voltage versus Low Voltage:a comparisonMost customers relate the functionality of a piezo stack only to the used piezoceramic material.However, it is a common experience that all aspects of the stack design, manufacturing technique and finish of the whole component are essentials regarding performance and reliability.Following points require attention:●joining techniques ●electrode design●internal insulation techniques ●surface insulation techniquesAll of the structural components of a stack are subject to strongly varying mechanical andelectrical load conditions during dynamic cycling.Fig. 2.2: Schematic of integration of a piezo stack into a preloaded casingThis leads to very different levels of reliability when considering different actuator concepts for a distinct application.Piezo stacks from different sources will differ not only in the used ceramic, but also in different manufacturing techniques. These differences are not necessarily expressed in the short term performance data. Careful evaluation of theproposed piezo stacks must be undertaken when an application requires high reliability.PIEZOMECHANIK stack actuators range from general-purpose elements for low and medium dynamic applications up to specially designed elements for very high mechanical dynamics.Further upgrades of the stack actuator are the use of metal casings with internal pre-stress mechanisms (fig. 2.2) and other options likeinternal heat management, position sensing etc.(=> chap. 6: Options)2.3 StackconfigurationPiezo tubes are simple ceramic cylinders withmetalized inner and outer surfaces. For mechanical stability reasons, the wall thickness of such tubes needs to be about ≥0.5 mm (fig. 2.3, A).To get maximum displacement, high voltages are applied.Piezo tubes are sometimes used as simple positioning mechanism, when access to the system’s axis is needed.Piezo ring actuators can be a much more efficient alternative.By applying a center bore, piezo stacks can be built up as hollow cylindrical elements, (fig. 2.3, B)offering a much wider range of design opportuni -ties for piezomechanics.Piezo ring actuators were first offered to the market by PIEZOMECHANIK in the 1980’s .Fig. 2.3: Piezo tube (A) versus stacked cylinder (ring actuator(B))A B2.4 Ring stacks versus piezo tubes:acomparisonAttention:Piezo tubes make use of the contractive d 31piezo-effect.Piezo ring actuators make use of the expanding d 33piezo-effect showing doubled strain efficiency of the d 31operation.The change of sign in motion shall be kept in mind when setting up e.g. a feed back controlled system.Ring actuators show specific features and advanta-ges in comparison to bulk stacks.●Higher bending stability:When comparing the same volume of activeceramic material a ring actuator has a larger total diameter than the bulk stack. Accordingly, this larger diameter results in an increase of mechan-ical stability against bending and buckling.This is important, when long-stroke stacks are set up showing a rather critical aspect ratio length/diameter. To compensate for this, larger diameters are needed.When using a bulk design, the electrical capaci-tance increases dramatically for mechanical sta-bility reasons only. The electrical power con-sumption increases equivalently, but is not need-ed on the mechanical output side. The overall power efficiency is going down (mismatch).By using the hollow cylinder ring actuatorsdesign, the mechanical stability is enhanced with-out the increase of electrical capacitance.Fig. 2.4:Ring stack versus bulk stack●Efficient heat management:Piezo-actuators generate heat when operated dynamically with high repetition rates.This heat must be removed from actuator ceram-ic. Overheating will lead to worsening of actuator performance and/or cause damage.It is a fact that piezoceramic is characterized by poor thermal conductivity that rules all heat management measures. The length of the heat diffusion path and the available actuator surface determines the quantity of heat removed from the ceramic volume. In terms of heat management efficiency, the ring design is favored over the bulk stack with respect to these parameters.(=> chap. 5.3) Hence, ring-type actuator can run much higher non-resonant frequencies than bulk stacks without the risk of heat damage.Ring actuators are more elaborate and expensive than bulk elements.2.5 Ring stacks versus bulk stacks:acomparisonAll structural components of piezo-actuators are subject to potentially high mechanical loading not only during operation, but also during handling and mounting.Be careful: piezoceramic components are mechani-cally sensitive devices.●Local mechanical stress concentration creates potentially “cracks” within the piezoceramics,leading to a weakening of the electrical “stability”of the ceramic.Fig. 2.6:on stack insulation (osi)-design, insulation is done outside the active stack100%internal electrodePZT -layersinsulationsupply electrode2.6Advantages of PIEZOMECHANIK’s piezostacks●The electrical and mechanical stability of the supply electrodes is important for the overall reliability of a stack actuator when operated dynamically.●A major design topic is the handling of the neces-sary insulation gap between internal electrodes and supply electrodes of opposing polarity.Point of attention is a potential local distortion of electrical field in the vicinity of such an insulation region. By the piezo-mechanical coupling, this leads to a local mechanical stress concentration with subsequent crack generation and a potential failure of the stack by electrical short-circuiting.PIEZOMECHANIK takes care about these risks by using two different insulation concepts for different actuator applications.●on stack insulation (osi-design) (fig. 2.6)Used for PIEZOMECHANIK’shigh voltage actuators (H)PSt 500/1000low voltage stacks (H)PSt 150The insulation gap is prepared on stack’s surface.Therefore the piezoceramic cross ection of a stack is 100% electroded and activated homogeneously.●highest actuator performance, high blocking forces●no local field distortion etc.●no local stress spots are induced => no cracks are generated etc.Last, but not least: osi-designed stacks show high resistance to bending forces.2.6Advantages of PIEZOMECHANIK’s piezo stacksFig.2.7:in stack insulation (isi)-design, insulation is done inside the PZT-stackinternal electrodeinsulation gap(no internal electroding)supply electrode●High cycle fatigue resistant electrodes All piezo stacks show the supply electrodes attached onto the piezo stack’s side faces.These electrodes are subject to remarkable strain and acceleration induced stress during dynamic cycling.Additionally a high electrical current loading occurs, where special contact techniques are needed to transfer high powers without losses to the ceramic structure.●in stack insulation (isi-design)Used for PIEZOMECHANIK’s PSt-HD 200 stacksPiezo chips (H)PCh 150This is a widely used “classical” technique using an insulation gap within the stack’s volume (=>fig.2.7).The stack volume is not completely activated.Therefore performance reduction occurs for minia-ture stack cross sections.Here occurs additionally the stress spot concentra-tion problem.To avoid catastrophic crack generation and propagation different countermeasures are provided.One technique applies small notches or grooves to the stack’s surface for getting a “soft” surface to reduce mechanical stress concentration.Isi- stacks are less stable against bending forces due to surface weakening by the notch-effect (in comparison to osi-stacks).To improve the mechanical stability, isi-stacks aremostly used in a high-preloaded arrangement.+-Piezo stacks are widely used for precision positioning tasks: a component shall be moved with sub-micron accuracy from one position to another.Most piezo-mechanical systems for this purpose show a special trait:nearly no alteration of system’s internal force balance occurs during piezo action.Only then, piezo stack’s expansion maximum is achieved.Precision positioning is mostly done by voltage control of piezo stacks.The stroke of a piezo-mechanical system can be increased by lever-constructions, where amplifying factors n of 10 are achieved without big efforts. But keep in mind:●load capability is reduced to 1/n●the compliance of the complete system increases by n² compared to the original stack data.Fig.3.1:Schematic of a piezo stack’s stroke/voltage diagram by cycling the stack within the voltage range U min – U max – U min .Precision Positioning3Piezo stack actuators expand, when they are charged up from a voltage U min to U maxThe motion is reversed, when the actuator isdischarged. The (reasonable) maximum strain rates are about 0.1-0.15% of the actuator length.Exaggerating strain by applying too high electrical fields is adverse to reliability.For sub-resonant operation, the piezo stack motion follows the applied voltage signal instantaneously.The electrical behavior of piezo-actuators is like that of a capacitor.3.1 Shift versus voltage characteristicCorrelation of piezo stack’s open-loop cycle over a voltage range U min -U max -U min leads to the hysteresis diagram fig. 3.1.Attention:do not over-interpret the open-loop stroke-/voltage-diagrams, they are not high resolution calibration curves for practice!●The exact shape of the hysteresis cycle (fig. 3.1) depends on the applied cycling voltage range.For very small voltage variations, the response looks much more linear rather than like a loop (small signal versus large signal excitation).●An acceptable reproducibility of the hysteresis diagram is achieved only after reaching an equilib-rium attained by cycling the system many times while all other operation parameters like tempera-ture, force and load are held very constant. If the cycling conditions are changed the system will adjust towards a new equilibrium after the appli-cation of a sufficient number of cycles.ͬlU min U maxstroke voltageFig.3.2:Field of positions by open loop random generation of voltage steps. The uncertainty in positioning by random position setting is about 10% of the operation range, defined by U min , U max .A lot of attempts have been made to overcome the need for position feedback for piezo precision posi-tioning, but the success was limitedA,algorithms have been developed for piezo-actuator computer control to compensate for the “ferro-effects” of PZT ceramic like non-linearity, hysteresis and memory-effect. B,electro-strictive ceramics have been used (=> chap. 8) instead of PZT ceramics.C,charge or current control has been applied instead of voltage control (=> chap. 9.2)All methods have been limited in effectiveness e.g.to non-linearity etc. of about 1% and are not really suited for open-loop ultra-precise positioning.Options A and B are not used in common practice.Option C, is an interesting technique for dynamic actuator operation for other reasons, but not for precision positioning.●The exact shape of the diagram fig. 3.1 depends on the cycle time.The slower the cycling is applied, the wider the hysteresis becomes due to the slow poling effects of the piezoceramic structure.These poling effects are also the reason for creep upon the application of a voltage step to the piezo stack.●When an open-loop random (non-periodic) setting of the voltage input is applied, a field of positions is generated, where the cycling hysteresis is the envelope of this field (fig. 3.2).With other words: the final position of the stack upon application of a distinct voltage level depends on the “history” of stack’s operation (memory-effect for open-loop)3.1 Shift versus voltagecharacteristicͬlU min U maxNotice:Even when an open-loop perfect actuator would be available, it only partially solves the problems of precision positioning.In most cases, piezo stacks are prime movers of coupled mechanical devices for motion transfer.In practice, these mechanics possess inherent imperfections. Without high accuracy position sensing and information feedback to the actuator,these deficits are not recognized and are self-evidently not compensated for by open-loop actuation.Even the simplest adjustment procedure inlaboratory by turning the voltage control knob of a manually set voltage supply is a kind of feed-back control: The operator checks for the correct result (e.g. a distinct interference pattern in optics)stroke voltageFig. 3.3: Schematic comparison of the open loop and feed-back controlled closed-loop operation of a piezo-systemAs seen in chapter 3.1. very high precision positioning with an accuracy better than 1% of actuators maximum stroke position-sensing and feed-back control is needed.Then the piezo-actuator is able to carry out the finest corrections to come nearest to a desired pre-set position. In this case, hysteresis, creep, and non-linearities are ruled out automatically.PIEZOMECHANIK213.2 Precision positioning by piezo stacksNotice:A feedback philosophy handles only allmisalignments of the piezo-mechanics betweenactuator and position sensor. Misalignments outside the closed loop path are not compensated for.Piezo-actuators with integral position sensor can handle all internal “imperfections” (hysteresis, drift,non-linearity) and all effects as long as they are acting back to the actuator’s strain (e.g. load variations).The unique feature of piezo-actuators:the infinitely high relative positioning sensitivity Piezoceramic converts an infinitely small voltage variation into an infinitely small motion.This has been proven explicitly down to the picometer range.ͬl+5Vrated value signalopen-loopclosed-loopU maxstroke。

磁学径向克尔英文 kerr effect

IntroductionThe Kerr effect, also known as the magneto-optic Kerr effect (MOKE), is a phenomenon that manifests the interaction between light and magnetic fields in a material. It is named after its discoverer, John Kerr, who observed this effect in 1877. The radial Kerr effect, specifically, refers to the variation in polarization state of light upon reflection from a magnetized surface, where the change occurs radially with respect to the magnetization direction. This unique aspect of the Kerr effect has significant implications in various scientific disciplines, including condensed matter physics, materials science, and optoelectronics. This paper presents a comprehensive, multifaceted analysis of the radial Kerr effect, delving into its underlying principles, experimental techniques, applications, and ongoing research directions.I. Theoretical Foundations of the Radial Kerr EffectA. Basic PrinciplesThe radial Kerr effect arises due to the anisotropic nature of the refractive index of a ferromagnetic or ferrimagnetic material when subjected to an external magnetic field. When linearly polarized light impinges on such a magnetized surface, the reflected beam experiences a change in its polarization state, which is characterized by a rotation of the plane of polarization and/or a change in ellipticity. This alteration is radially dependent on the orientation of the magnetization vector relative to the incident light's plane of incidence. The radial Kerr effect is fundamentally governed by the Faraday-Kerr law, which describes the relationship between the change in polarization angle (ΔθK) and the applied magnetic field (H):ΔθK = nHKVwhere n is the sample's refractive index, H is the magnetic field strength, K is the Kerr constant, and V is the Verdet constant, which depends on the wavelength of the incident light and the magnetic properties of the material.B. Microscopic MechanismsAt the microscopic level, the radial Kerr effect can be attributed to twoprimary mechanisms: the spin-orbit interaction and the exchange interaction. The spin-orbit interaction arises from the coupling between the electron's spin and its orbital motion in the presence of an electric field gradient, leading to a magnetic-field-dependent modification of the electron density distribution and, consequently, the refractive index. The exchange interaction, on the other hand, influences the Kerr effect through its role in determining the magnetic structure and the alignment of magnetic moments within the material.C. Material DependenceThe magnitude and sign of the radial Kerr effect are highly dependent on the magnetic and optical properties of the material under investigation. Ferromagnetic and ferrimagnetic materials generally exhibit larger Kerr rotations due to their strong net magnetization. Additionally, the effect is sensitive to factors such as crystal structure, chemical composition, and doping levels, making it a valuable tool for studying the magnetic and electronic structure of complex materials.II. Experimental Techniques for Measuring the Radial Kerr EffectA. MOKE SetupA typical MOKE setup consists of a light source, polarizers, a magnetized sample, and a detector. In the case of radial Kerr measurements, the sample is usually magnetized along a radial direction, and the incident light is either p-polarized (electric field parallel to the plane of incidence) or s-polarized (electric field perpendicular to the plane of incidence). By monitoring the change in the polarization state of the reflected light as a function of the applied magnetic field, the radial Kerr effect can be quantified.B. Advanced MOKE TechniquesSeveral advanced MOKE techniques have been developed to enhance the sensitivity and specificity of radial Kerr effect measurements. These include polar MOKE, longitudinal MOKE, and polarizing neutron reflectometry, each tailored to probe different aspects of the magnetic structure and dynamics. Moreover, time-resolved MOKE setups enable the study of ultrafast magneticphenomena, such as spin dynamics and all-optical switching, by employing pulsed laser sources and high-speed detection systems.III. Applications of the Radial Kerr EffectA. Magnetic Domain Imaging and CharacterizationThe radial Kerr effect plays a crucial role in visualizing and analyzing magnetic domains in ferromagnetic and ferrimagnetic materials. By raster-scanning a focused laser beam over the sample surface while monitoring the Kerr signal, high-resolution maps of domain patterns, domain wall structures, and magnetic domain evolution can be obtained. This information is vital for understanding the fundamental mechanisms governing magnetic behavior and optimizing the performance of magnetic devices.B. Magnetometry and SensingDue to its sensitivity to both the magnitude and direction of the magnetic field, the radial Kerr effect finds applications in magnetometry and sensing technologies. MOKE-based sensors offer high spatial resolution, non-destructive testing capabilities, and compatibility with various sample geometries, making them suitable for applications ranging from magnetic storage media characterization to biomedical imaging.C. Spintronics and MagnonicsThe radial Kerr effect is instrumental in investigating spintronic and magnonic phenomena, where the manipulation and control of spin degrees of freedom in solids are exploited for novel device concepts. For instance, it can be used to study spin-wave propagation, spin-transfer torque effects, and all-optical magnetic switching, which are key elements in the development of spintronic memory, logic devices, and magnonic circuits.IV. Current Research Directions and Future PerspectivesA. Advanced Materials and NanostructuresOngoing research in the field focuses on exploring the radial Kerr effect in novel magnetic materials, such as multiferroics, topological magnets, and magnetic thin films and nanostructures. These studies aim to uncover newmagnetooptical phenomena, understand the interplay between magnetic, electric, and structural order parameters, and develop materials with tailored Kerr responses for next-generation optoelectronic and spintronic applications.B. Ultrafast Magnetism and Spin DynamicsThe advent of femtosecond laser technology has enabled researchers to investigate the radial Kerr effect on ultrafast timescales, revealing fascinating insights into the fundamental processes governing magnetic relaxation, spin precession, and all-optical manipulation of magnetic order. Future work in this area promises to deepen our understanding of ultrafast magnetism and pave the way for the development of ultrafast magnetic switches and memories.C. Quantum Information ProcessingRecent studies have demonstrated the potential of the radial Kerr effect in quantum information processing applications. For example, the manipulation of single spins in solid-state systems using the radial Kerr effect could lead to the realization of scalable, robust quantum bits (qubits) and quantum communication protocols. Further exploration in this direction may open up new avenues for quantum computing and cryptography.ConclusionThe radial Kerr effect, a manifestation of the intricate interplay between light and magnetism, offers a powerful and versatile platform for probing the magnetic properties and dynamics of materials. Its profound impact on various scientific disciplines, coupled with ongoing advancements in experimental techniques and materials engineering, underscores the continued importance of this phenomenon in shaping our understanding of magnetism and driving technological innovations in optoelectronics, spintronics, and quantum information processing. As research in these fields progresses, the radial Kerr effect will undoubtedly continue to serve as a cornerstone for unraveling the mysteries of magnetic materials and harnessing their potential for transformative technologies.。

电气工程及其自动化专业英语 Chapter 7 Power System Protections

Section 1 Introduction
（6）Phase sequence relays such as (i) negative sequence relays and, (ii) zero sequence relays, （7）Differential relays and percentage differential relays, （8）Distance relays such as (i) plane impedance relays, (ii) angle impedance relays, i.e. Ohm or reactance relays, (iii) angle admittance relays, i.e. Mho relays and, (iv) offset and restricted relays, （9）Pilot relays such as (i) wire pilot relays, (ii) carrier channel pilot relays, (iii) microwave pilot relays.
Chapter 7
Power System Protections
Section 1 Introduction
Text
New Words and Expressions Resume
Exercises
End
Section 1 Introduction
The steady-state operation of a power system is frequently disturbed by various faults on electrical equipment. To maintain the proper operation of the power system, an effective, efficient and reliable protection scheme is required. Power system components are designed to operate under normal operating conditions. However, if due to any reason, say a fault, there is an abnormality, it is necessary that there should be a device which senses these abnormal conditions and if so, the element or component where such an abnormality has taken

Solid-state image sensing device and method of con

专利名称：Solid-state image sensing device andmethod of controlling the solid- state imagesensing device发明人：Mahito Shinohara,Hidekazu Takahashi申请号：US08/690935申请日：19960801公开号：US05698844A公开日：19971216专利内容由知识产权出版社提供摘要：A solid-state image sensing device has an inverting-amplifier constructed with MOS transistors, which is provided with electrical power through a common output line, and inputs and outputs signals through the common output line. With this configuration, a supply line conventionally used exclusively for supplying electrical power does not pass through a pixel of a solid-state image sensing device, thereby reducing difficulty of manufacturing a fine pixel and making a large aperture area. The inverting-amplifier of this solid-state image sensing device is reset to the same voltage as that of the common output line, and an offset voltage is read out. Thereafter, the electric charge inputted into the inverting- amplifier from a photo-electric converter is inverted and amplified, and the resultant signal is read out. Finally, a difference between the inverted and amplified signal and the offset voltage is obtained and outputted as an image signal.申请人：CANON KABUSHIKI KAISHA代理机构：Fitzpatrick,Cella, Harper & Scinto更多信息请下载全文后查看。

journal of advanced ceramics字数要求

journal of advanced ceramics字数要求Journal of Advanced Ceramics: Advancements in Ceramic Materials and ApplicationsIntroduction:The Journal of Advanced Ceramics is a prestigious publication that focuses on the latest advancements in ceramic materials and their applications. This article aims to provide a comprehensive overview of the key topics covered in the journal, highlighting the significant contributions made by researchers in the field of advanced ceramics.I. Ceramic Material Development:1.1 Composition Design:- Researchers focus on developing novel ceramic compositions by manipulating the chemical composition of materials.- The composition design aims to enhance specific properties such as mechanical strength, thermal conductivity, and electrical conductivity.1.2 Microstructure Engineering:- Microstructure engineering involves controlling the arrangement of atoms and grains within ceramic materials.- This technique enables researchers to tailor the material's properties, such as porosity, grain size, and phase distribution.1.3 Synthesis Techniques:- Various synthesis techniques, including sol-gel, solid-state reaction, and chemical vapor deposition, are explored to fabricate advanced ceramic materials.- Researchers optimize these techniques to achieve high purity, uniformity, and desired microstructures.II. Characterization and Evaluation:2.1 Structural Analysis:- Advanced characterization techniques such as X-ray diffraction, scanning electron microscopy, and transmission electron microscopy are used to analyze the crystal structure and morphology of ceramic materials.- These analyses provide insights into the material's properties, defects, and interfaces.2.2 Mechanical Properties:- Researchers investigate the mechanical behavior of ceramics, including their strength, toughness, and fracture resistance.- Mechanical testing methods, such as indentation, compression, and flexural tests, are employed to evaluate these properties.2.3 Thermal and Electrical Properties:- The thermal and electrical properties of ceramics are crucial for their applications in various industries.- Researchers study the thermal conductivity, coefficient of thermal expansion, electrical resistivity, and dielectric properties of ceramic materials.III. Applications of Advanced Ceramics:3.1 Electronics and Optoelectronics:- Advanced ceramics find extensive applications in electronic devices, such as semiconductors, capacitors, and sensors.- Their excellent electrical and optical properties make them ideal for optoelectronic components like LEDs, lasers, and photovoltaic devices.3.2 Energy and Environment:- Ceramic materials play a vital role in energy storage and conversion systems, such as fuel cells, batteries, and photovoltaic cells.- Their chemical stability and high-temperature resistance make them suitable for environmental applications like catalysis and gas sensing.3.3 Biomedical and Healthcare:- Advanced ceramics are widely used in biomedical implants, dental applications, and drug delivery systems.- Their biocompatibility, wear resistance, and ability to mimic bone structure make them ideal for these applications.IV. Emerging Trends and Future Directions:4.1 Nanoceramics:- Nanotechnology has opened new avenues for the development of nanoceramic materials with enhanced properties.- Researchers explore the synthesis, characterization, and applications of nanoceramics in various fields.4.2 Advanced Processing Techniques:- Advanced processing techniques, such as additive manufacturing and spark plasma sintering, are revolutionizing the fabrication of ceramic components.- These techniques enable the production of complex shapes, improved mechanical properties, and reduced processing time.4.3 Multifunctional Ceramics:- Researchers are focusing on developing multifunctional ceramics that possess multiple properties, such as electrical, thermal, and mechanical functionalities.- These materials have the potential to revolutionize various industries, including electronics, energy, and healthcare.Conclusion:In conclusion, the Journal of Advanced Ceramics covers a wide range of topics related to ceramic materials and their applications. From composition design and microstructure engineering to characterization techniques and emerging trends, the journal provides valuable insights into the advancements made in this field. The applications of advanced ceramics in electronics, energy, and healthcare highlight their immense potential for technological advancements. The continuous research and development in the field of advanced ceramics promise a future with even more innovative and functional ceramic materials.。

太重集团将建国家重点实验室

烯,它们对气体吸附的机理都是利用石墨烯与气体分子之间的电子转移来实现的。

当吸附气体是强氧化剂(如O 2,NO 2)时会吸电子,使石墨烯的导电孔增加,费米能级和价带接近,导电率提高;当吸附气体是还原剂(如NH 3)时会放电子,石墨烯的导电孔减少,导电率降低。

石墨烯对气体吸附的理论研究间接指导着实验研究,它凭借着优异的电性能和吸附性能,成为气体传感器优先选择的材料。

3结束语石墨烯自从2004年被发现以来,由于其良好的导电性、导热性及优异的力学性能和光学性能,一直是材料领域的研究热点。

目前,无论是实验研究方面还是理论研究方面,石墨烯均已展现出重大的科学意义和应用价值,在生物、电极材料等方面展现出独特的应用优势。

在环境污染严重的当代,石墨烯在环境处理方面的应用备受关注。

综上所述,由于石墨烯及以石墨烯为基底的复合物在对气体吸附的理论研究和实验研究中,均展现出优异的性能,因此将石墨烯作为气敏材料用于气体传感器是未来的发展趋势。

参考文献:[1]李小波,唐大伟,祝捷.纳米金刚石颗粒导热系数的分子动力学研究[J ].中国科学院研究生院学报,2008,25(5):598-601.[2]黄毅,陈永胜.石墨烯的功能化极其相关应用[J ].中国科学B 辑:化学,2009,39(9):887-896.[3]Zhou D,Liu Q,Cheng Q Y,et a l.Gra phene-ma nga nes eoxide hybrid porous ma teria l a nd its a pplica tion in ca rbon dioxidea ds orption[J ].Chines eS cienceBulletin,2012,57(23):3059-3064.[4]Zhou D,Cheng Q Y,Cui Y,et a l.Gra phene-terpyridine complex hybrid porous ma teria l for ca rbon dioxide a ds orp-tion[J ].Ca rbon,2014(66):592-598.[5]Ko G,Kim H Y,Ahn J ,et a l.Gra phene-ba s ed nitrogen dioxide ga ss ens ors [J ].Current Applied Phys ics ,2010,10(4):1002-1004.[6]S a ms ona u S V,S hva rkov S D.Growth of gra phene-like films for NO 2detection[J ].S ens ors a nd Actua tors B,2013(182):66-70.[7]Romero H E,J os hi P,Gupta A K,et a l.Ads orption of a m-moniaon gra phene[J ].Na notechnology,2009,20(24):245501.[8]Ga uta m M,J a ya tis s a A H.Ammonia ga s s ens ing beha vior of gra phene s urfa ce decora ted with gold na nopa rticles[J ].S ol-id-S ta te Electronics ,2012(78):159-165.[9]Pa ulla K K,Ha s s a n A J ,Knick C R,et a l.Ab initio a s s es s -ment of gra phene na noribbons rea ctivity for molecule a d-s orption a nd conducta nce modula tion:nitrogen dioxide na n-os ens or[J ].RS C Adva nces ,2013,4(5):2346-2354.[10]Ta ng S ,Ca o Z.Ads orption of nitrogen oxideson gra phene a nd gra phene oxides :ins ightsfrom dens ity functiona l ca lcu-la tions[J ].The J ourna l of chemica l phys ics ,2011,134(4):31-38.[11]Ya va ri F,Chen Z,Thoma s A V,et a l.High s ens itivity ga s detection us ing a ma cros copic three-dimens iona l gra phene foa m network[J ].S cientific Reports ,2011(1):166.(责任编辑邸开宇)Research Progress of Graphene on Gas AdsorptionZhang Wen-hui ,Hou Chun-lin ,Gao Li ,Sun You-yi(School of Materials Science and Engineering,North University of China,Taiyuan 030051China )Abstract :The paper briefly introduces the research advances of graphene in recent years.Graphene is the first free-standing two-dimensional atomic crystal which has been found so far.It not only has a very unique pore structure,but has a largerspecific surface area and high surface activity.With all these merits,graphene has good adsorption effect,so it is suitable forgas sensors.Key words :graphene;gas adsorption;two-dimensional crystal structure;gas sensitive material;gas sensor太重集团将建国家重点实验室3月8日,太重集团“矿山采掘装备及智能制造国家重点实验室”建设与运行实施方案顺利通过山西省科技厅组织的专家论证。

ant的单词

ant的单词以下是关于“ant”的相关内容：一、单词“ant”，[ænt]，名词，意思是“蚂蚁”。

二、单词用法1. 作主语- An ant is a very small insect.（蚂蚁是一种非常小的昆虫。

）2. 作介词宾语- There are some ants on the tree.（树上有一些蚂蚁。

）三、近义词1. “insect”，[ˈɪnsekt]，名词，“昆虫”。

但“insect”是一个更宽泛的概念，包含了蚂蚁以及其他各种昆虫。

例如：Most ants are social insects.（大多数蚂蚁是群居昆虫。

）2. “pismire”，[ˈpɪsmaɪə(r)]，名词，是比较古旧的表示“蚂蚁”的词汇，现在很少使用。

四、短语搭配1. “ant colony”，蚁群- The ant colony is highly organized.（蚁群组织性很强。

）2. “ant hill”，蚁丘- We saw an ant hill in the garden.（我们在花园里看到了一个蚁丘。

）3. “fire ant”，火蚁- Be careful of fire ants. They can sting painfully.（小心火蚁，它们蜇人很疼。

）五、双语例句1. The ant is carrying a piece of food back to its nest.（蚂蚁正把一块食物搬回它的巢穴。

）2. Ants live in large groups.（蚂蚁群居生活。

）3. A single ant can't move a big crumb by itself.（单只蚂蚁自己无法移动一大块面包屑。

）4. Antsmunicate with each other by chemicals.（蚂蚁通过化学物质相互交流。

）5. Some ants are very good at climbing trees.（有些蚂蚁非常擅长爬树。

基于特征参数的频率域海洋可控源电磁数据反演影响因素分析

第50卷第9期2019年9月中南大学学报(自然科学版)Journal of Central South University(Science and Technology)V ol.50No.9Sep.2019基于特征参数的频率域海洋可控源电磁数据反演影响因素分析韩波，李刚，刘颖(中国海洋大学海洋地球科学学院，山东青岛，266100)摘要：为评估电磁场分量、发射频率和观测模式对频率域海洋可控源电磁(CSEM)一维反演的影响，对经典的海洋一维油气储层模型开展一系列反演试验。

研究结果表明：采用混合观测模式及多分量、多频率数据可明显改善反演效果，进一步对挪威Troll油田的CSEM数据反演并进行特征参数分析，反演所得的电阻率模型与地震解释资料吻合，在进行大规模二维或三维反演前，结合测区已知地质钻井资料可建立反演初始模型，使用该模型对实际数据进行特征参数分析，可初步判断该数据是否适合反演。

关键词：可控源电磁法；反演；特征参数分析中图分类号：P319.2文献标志码：A文章编号：1672-7207（2019）09-2184-11Engenparameter analysis for frequency-domain inversion ofmarine CSEM dataHAN Bo,LI Gang,LIU Ying(College of Marine Geosciences,Ocean University of China,Qingdao266100,China)Abstract:In order to evaluate the effect of several factors,including the selection of electromagnetic(EM)field components,frequencies,and survey geometries,upon the inversion results for one-dimensional(1D)frequency domain marine controlled-source electromagnetic(CSEM)problem,a series of numerical experiments on the1D canonical reservoir model were conducted.The results show that the inversion model can be greatly improved with multi-EM field components,multi-frequencies or the mixed survey geometries involved.Then,the real CSEM data from Troll filed of Norway was inverted,and the engenparameter analysis is performed for the inversion result.The obtained resistivity model is consistent with the seismic interpretation data.It is suggested that an appropriate starting reference model be constructed according to some prior information such as local geology and well data,and the engenparameter analysis be performed based on the model to evaluate the effectiveness of the data used for inversion.Key words:controlled-source electromagnetic method(CSEM);inversion;engenparameter analysis可控源电磁法(controlled-source electromagnetic methods,CSEM)已成功应用于海底油气、天然气收稿日期：2018−10−12;修回日期：2018−12−20基金项目(Foundation item)：国家自然科学基金资助项目(41704075，41604063)；山东省自然科学基金资助项目(ZR2016DQ15，ZR2016DB31)(Projects(41704075,41604063)supported by the National Natural Science Foundation of China;Projects(ZR2016DQ15,ZR2016DB31)supported by the Natural Science Foundation of Shandong)通信作者：李刚，博士，讲师，从事海洋电磁法正反演与应用研究；E-mail：********************DOI:10.11817/j.issn.1672-7207.2019.09.015第9期韩波，等：基于特征参数的频率域海洋可控源电磁数据反演影响因素分析水合物及矿产资源勘探中[1−2]。

商品说明书：Slim RG型号的solid state relay

•Product width ranging from 22.5mm to 35mm •Partial load failure detection •Zero cross switching•Ratings up to 600VACrms & 90AACrms•Up to 18000A 2s for I 2t and 1200Vp for blocking voltage •Control voltage range: 4 - 32 VDC •Local or remote current set-point•LED indications for the different faults•Alarm signal output for SSR or load circuit malfunction •IP20 protection•Integrated voltage transient protection with varistor •RoHS compliant•Short circuit current rating 100kArmsProduct DescriptionThis slim RG design is capable of detecting various failure modes occuring to the heaters and also to the product itself.Failures which can be detected include partial load failure,heater loss, open circuit SSR,short circuit SSR and SSR over temperature. A normally closed, potential free alarm,opens in the event of a system or power semiconductor fault. A load current setpint has to be TEACHed to the SSR either locally by the TEACH buttonon the front of the device or remotely through the provided terminal.This product is available either with integrated heatsink (RGC1S series) and also with-out heatsink (RGS1S series).The minimum product width is 22.5mm. The control and aux-iliary terminals are double box clamps to facilitate safe loop-ing whilst the power terminals are either screw terminals or box clamps depending on the model selected.Solid State Relays1-Phase with Integrated Current Monitoring Types RGS1SNote: Specifications stated at 25°C unless specified.Ordering Key1-Phase Switching Rated V,Control Rated current 1 Connection Connection Connection Protection OptionsSSR mode Blocking V*voltage I 2t datainput output configuration RGS1:S: Zero 60:600VAC D: 4-32VDC20: 23AAC, 525A 2s G: Box K: Screw E: Contactor P: Over-HT 2:with no heatsinkcross with +10% -15%,30: 30AAC, 1800A 2s ClampG: Box U: SSRtemperature thermal current 1200Vp31: 30AAC, 6600A 2s Clampprotection padsensing61: 65AAC, 18000A 2s 92: 90AAC, 18000A 2s* Rated voltage, Blocking voltage 1: refer to heatsink selection tables2: Add suffix HT to SSR part number for factory mounted thermal pad. Conditions apply. Please consult your Carlo Gavazzi sales representative for further details.Rated output voltage,Connection Control Configuration 2Blocking voltagecontrol/ powervoltage600VAC, 1200Vp Box Clamp / Screw4 - 32VDCESelection GuideRated output voltage,Connection Control Configuration 2Blocking voltagecontrol/ powervoltage600VAC, 1200Vp Box Clamp/ Box Clamp4 - 32VDCEUGeneral Specifications Output Voltage Specifications Output Specifications3: refer to heatsink selection tables4: refer to Alarm LED IndicationsSupply Specifications (A1+, A2-)Alarm Specifications (11+, 12-)Remote TEACH Specifications (IN1)5: DC control to be supplied by a Class 2 power source6: The alarm will open in the case when the power supply is removed7: A partial load failure will not be detected if the ON time is less than 120msControl Specifications (IN2)Output Power Dissipation5A 10A 15A 20A 25A 30A 35A 40A 45A 50A 55A 60A 65A 70A 75A 80A 85ARG (92)RG (61)RG...31RG (30)RG (20)Load current in AACrmsHeatsink Selection23.0 3.45 3.02 2.59 2.16 1.73 1.29 23.2 20.7 3.93 3.44 2.95 2.46 1.97 1.48 20.3 18.4 4.55 3.98 3.41 2.84 2.27 1.70 17.6 16.1 5.35 4.68 4.01 3.34 2.67 2.01 15.0 13.8 6.44 5.63 4.83 4.02 3.22 2.41 12.4 11.5 8.00 7.00 6.00 5.00 4.00 3.00 10.0 9.2 10.39 9.09 7.79 6.50 5.20 3.90 7.7 6.9 14.50 12.69 10.88 9.07 7.25 5.44 5.5 4.6 23.06 20.18 17.29 14.41 11.53 8.65 3.5 2.3 50.39 44.09 37.79 31.49 25.20 18.90 1.6 20 30 40 50 60 70RGS1S60D20GKEPPowerdissipation [W]Loadcurrent [A]Thermalresistance [K/W]Ambient temp [°C]T A32.0 2.62 2.29 1.97 1.64 1.31 0.98 30.5 28.8 2.98 2.60 2.23 1.86 1.49 1.12 26.9 25.6 3.43 3.00 2.57 2.14 1.71 1.29 23.3 22.4 4.01 3.51 3.012.51 2.01 1.51 19.9 19.2 4.81 4.213.61 3.01 2.41 1.80 16.6 16.0 5.94 5.204.46 3.71 2.97 2.23 13.5 12.8 7.69 6.735.76 4.80 3.84 2.88 10.4 9.610.68 9.34 8.01 6.67 5.34 4.00 7.5 6.4 16.89 14.78 12.67 10.56 8.45 6.33 4.7 3.2 36.77 32.17 27.58 22.98 18.38 13.79 2.2 20 30 40 50 60 70RGS1S60D30GKEPPowerdissipation [W]Loadcurrent [A]Thermalresistance [K/W]Ambient temp [°C]T A23.0 2.91 2.54 2.18 1.82 1.45 1.09 27.5 28.8 3.29 2.88 2.47 2.06 1.65 1.23 24.3 25.6 3.78 3.30 2.83 2.36 1.89 1.42 21.2 22.4 4.41 3.863.31 2.76 2.21 1.65 18.1 19.2 5.274.61 3.95 3.29 2.63 1.98 15.2 16.0 6.49 5.68 4.87 4.06 3.25 2.44 12.3 12.8 8.377.32 6.28 5.23 4.19 3.14 9.6 9.6 11.59 10.148.69 7.24 5.79 4.34 6.9 6.4 18.26 15.98 13.70 11.419.13 6.85 4.4 3.2 39.58 34.63 29.69 24.74 19.79 14.84 2.0 20 30 40 50 60 70RGS1S60D31GKEPPowerdissipation [W]Loadcurrent [A]Thermalresistance [K/W]Ambient temp [°C]T A90.0 0.62 0.52 0.41 0.31 0.21 0.11 98.4 81.0 0.77 0.66 0.54 0.42 0.31 0.19 85.9 72.0 0.97 0.83 0.70 0.56 0.43 0.29 74.0 63.0 1.23 1.07 0.910.75 0.59 0.43 62.5 54.0 1.55 1.35 1.16 0.97 0.77 0.58 51.7 45.0 1.93 1.69 1.45 1.21 0.97 0.73 41.4 36.0 2.53 2.21 1.89 1.58 1.26 0.95 31.6 27.0 3.55 3.11 2.66 2.22 1.77 1.33 22.5 18.0 5.67 4.97 4.26 3.55 2.84 2.13 14.1 9.0 12.46 10.90 9.34 7.79 6.23 4.67 6.4 20 30 40 50 60 70RGS1S60D61GGUP, RGS1S60D92GGEPPowerdissipation [W]Loadcurrent [A]Thermalresistance [K/W]Ambient temp [°C]T ASSR and heatsink.Heatsink Selection for RGS1S...HT32.0 2.82 2.45 2.09 1.73 1.36 1.00 27.5 28.8 3.29 2.88 2.47 2.06 1.65 1.23 24.3 25.6 3.78 3.30 2.83 2.36 1.89 1.42 21.2 22.4 4.41 3.86 3.312.76 2.21 1.65 18.1 19.2 5.27 4.613.95 3.29 2.63 1.98 15.2 16.0 6.49 5.684.87 4.06 3.25 2.44 12.3 12.8 8.37 7.32 6.285.23 4.19 3.14 9.6 9.6 11.59 10.14 8.69 7.24 5.79 4.346.9 6.4 18.26 15.98 13.70 11.41 9.13 6.85 4.4 3.2 39.58 34.63 29.69 24.74 19.79 14.84 2.0 20 30 40 50 60 70RGS1S60D31GKEPHTPowerdissipation [W]Loadcurrent [A]Thermalresistance [K/W]Ambient temp [°C]T A90.0 0.07 - - - - - 98.4 81.0 0.22 0.11 - - - - 85.9 72.0 0.42 0.28 0.15 0.01 - - 74.0 63.00.68 0.52 0.36 0.20 0.04 - 62.5 54.0 1.03 0.84 0.65 0.45 0.26 0.06 51.7 45.0 1.54 1.30 1.05 0.81 0.57 0.33 41.4 36.0 2.32 2.00 1.69 1.37 1.050.74 31.6 27.0 3.55 3.11 2.66 2.22 1.77 1.33 22.5 18.0 5.67 4.97 4.26 3.55 2.84 2.13 14.1 9.0 12.46 10.90 9.34 7.79 6.23 4.67 6.4 20 3040 50 60 70RGS1S60D61GGUPHT, RGS1S60D92GGEPHTPowerdissipation [W]Loadcurrent [A]Thermalresistance [K/W]Ambient temp [°C]T A23.0 3.18 2.75 2.32 1.88 1.45 1.02 23.2 20.7 3.81 3.32 2.83 2.34 1.85 1.35 20.3 18.4 4.55 3.98 3.41 2.84 2.27 1.70 17.6 16.1 5.35 4.68 4.01 3.34 2.67 2.01 15.0 13.8 6.44 5.63 4.83 4.02 3.22 2.41 12.4 11.5 8.00 7.00 6.00 5.00 4.00 3.00 10.0 9.2 10.39 9.09 7.79 6.50 5.20 3.90 7.7 6.9 14.50 12.69 10.88 9.07 7.25 5.44 5.5 4.6 23.08 20.18 17.29 14.41 11.53 8.65 3.5 2.3 50.39 44.09 37.79 31.49 25.20 18.90 1.6 20 30 40 50 60 70RGS1S60D20GKEPHTRGS1S...HT: RGS1S.. with attached thermal pad. Available upon request.Powerdissipation [W]Loadcurrent [A]Thermalresistance [K/W]Ambient temp [°C]T A32.0 2.29 1.96 1.64 1.31 0.98 0.65 30.5 28.8 2.76 2.39 2.01 1.64 1.27 0.90 26.9 25.6 3.35 2.92 2.49 2.06 1.63 1.21 23.3 22.4 4.01 3.51 3.01 2.51 2.01 1.51 19.9 19.2 4.81 4.21 3.61 3.01 2.41 1.80 16.6 16.0 5.94 5.20 4.46 3.72 2.97 2.23 13.5 12.8 7.69 6.73 5.77 4.80 3.84 2.88 10.4 9.6 10.68 9.34 8.01 6.67 5.34 4.00 7.5 6.4 16.89 14.78 12.67 10.56 8.45 6.33 4.7 3.2 36.77 32.17 27.58 22.98 18.38 13.79 2.2 20 30 40 50 60 70RGS1S60D30GKEPHTPowerdissipation [W]Loadcurrent [A]Thermalresistance [K/W]Ambient temp [°C]T ATerminal MarkingsNote:- Local TEACH by pressing front button for more than 3 sec but less than 5 sec - Fan supply (24VDC) for RGC1A60D90GGEP has to be supplied directly to fanConnection DiagramConnection Diagram for Separate Alarm OutputsConnection Diagram for Series Alarm OutputsAlarm LED Indications (Red LED)Mode of OperationMode of Operation (cont.)The TEACH procedure can be performed either locally or remotely. For local TEACH, the front 'TEACH' button on the SSR has to be pressed for at least 3 seconds (but less than 5 seconds). Remote TEACH can be performed by applying a high signal on terminal IN 1 for a duration of at least 3 seconds (but less than 5 seconds).Supply voltage has to be present across terminals A1, A2 for the TEACH function to be performed and SSR to operate.TEACH in the absence of a control signalIt is possible to TEACH the SSR without the presence of a control signal. In case of no previous stored setpoint (factory default), red and yellow LED will flash accordingly indicating this. The TEACH function will start as soon as the push button is released. The SSR will switch fully ON for 5 seconds (yellow LED ON during these 5 sec-onds) at the end of which, a load current setpoint is recorded. If TEACH procedure is successful the yellow and red LED will blink together for three times to indicate a successful setpoint measure-ment. The alarm output across terminals 11, 12 closes indicating a normal situation. In case of an unsuccessful TEACH, the red & yellow LED will scroll continously indicating that no current setpoint is stored. If load cur-rent does not stabilise during the 5 seconds TEACH sequence, it will not be possible to store setpoint. Another attempt to do a TEACH may be done until setpoint is recorded.TEACH when control signal is presentIn this case the TEACH procedure is identical to the TEACH proce-dure when there is no control signal. During the 5 seconds TEACH the status of the load switching will not be distinguished from unTEACHed state since load was ON before TEACH. Load remains ON as long as control voltage is present.If SSR is in a LOCKed position (see below) it will not be possible to perform a new TEACH. SSR has to be unLOCKed first.Mode of Operation (cont.)Electromagnetic CompatibilityAgency Approvals and ConformancesNote:• Control input lines must be installed together to maintain products' susceptability to Radio Frequency interference.• Use of AC solid state relays may, according to the application and the load current, cause conducted radio interferences. Use of mains filters may benecessary for cases where the user must meet E.M.C requirements. The capacitor values given inside the filtering specification tables should be taken only as indications, the filter attenuation will depend on the final application.• Performance Criteria 1: No degradation of performance or loss of function is allowed when the product is operated as intended.• Performance Criteria 2: During the test, degradation of performance or partial loss of function is allowed. However when the test is complete theproduct should return operating as intended by itself.• Performance Criteria 3: Temporary loss of function is allowed, provided the function can be restored by manual operation of the controls.Filtering - EN / IEC 55011 Class A compliance (for class B compliance contact us)Part Number Suggested filter for compliance Maximum Heater current RGS1S60D20GKEP 100 nF / 760V / X120 AAC RGS1S60D30GKEP 220 nF / 760V / X130 AAC RGS1S60D31GKEP 220 nF / 760V / X130 AAC RGS1S60D61GGUP 470 nF / 760V / X165 AAC RGS1S60D92GGEP470 nF / 760V / X165 AACFilter Connection DiagramsEnvironmental SpecificationsWeightPOWER CONNECTIONS: 1/L1, 2 /T1Use 75°C copper (Cu) conductors RG..20, 30, 31GKEPRG...92GGEP RG..61GGUPStripping Length (X) 12mm 11mmConnection typeM4 screw with captivated washer M5 screw with box clampRigid (Solid & Stranded)UL/ cUL rated data2 x 2.5..6 mm 2 1 x 2.5..6 mm 2 1 x 2.5..25mm 2 2 x 14.. 10 AWG 1 x 14.. 10 AWG 1 x 14...3 AWG Flexible with end sleeve2 x 1.0 ... 2.5mm 22 x 2.5..4mm 2 1 x 1.0..4mm 2 1 x 2.5..16mm 2 2 x 18.. 14 AWG 1 x 18.. 12 AWG 1 x 14.. 6 AWG2 x 14.. 12 AWG Flexible without 2 x 1.0 ... 2.5mm 2end sleeve2 x 2.5.. 6mm 2 1 x 1.0.. 6mm 2 1 x 4.. 25mm 2 2 x 18.. 14 AWG 1 x 18.. 10 AWG 1 x 12..3 AWG 2 x 14.. 10 AWG Torque specificationsPozidriv 2Pozidriv 2UL : 2Nm (17.7lb-in.)UL : 2.5Nm (22lb-in.)IEC: 1.5 - 2.0Nm (13.3 - 17.7lb-in)IEC: 2.5 - 3.0Nm (22 - 26.6lb-in)Aperture for termination lug 12.3mm N/AConnection SpecificationsXDimensionsMounting Instructions for RGS1SShort Circuit ProtectionProtection Co-ordination, Type 1 vs Type 2:Type 1 protection implies that after a short circuit, the device under test will no longer be in a functioning state. In type 2 co-ordination the device under test will still be functional after the short circuit. In both cases, however the short circuit has to be interrupted. The fuse between enclosure and supply shall not open. The door or cover of the enclosure shall not be blown open. There shall be no damage to conductors or terminals and the condcutors shall not separate from terminals. There shall be no breakage or cracking of insulating bases to the extent that the integrity of the mounting of live parts is impaired.Discharge of parts or any risk of fire shall not occur.The product variants listed in the table hereunder are suitable for use on a circuit capable of delivering not more than 100,000A rms Symmetrical Amperes, 600 Volts maximum when protected by fuses. Tests at 100,000A were performed with Class J fuses, fast acting; please refer to the table below for maximum allowed ampere rating of the fuse. Use fuses only.Class CC fuses are represented by tests performed on Class J fuses.Co-ordination type 1 (UL508)Part No. Max. fuse size [A]Class Current [kA]Voltage [VAC]RGS1S60D20GKEP 30J or CC100Max. 600RGS1S60D30GKEP 30J or CC 100Max. 600RGS1S60D31GKEP 40J100Max. 600RGS1S60D61GGUP 80J100Max. 600RGS1S60D92GGEP 80J100Max. 600Co-ordination type 2 (IEC/EN 60947-4-2/ -4-3)Type 2 Protection with Miniature Circuit Breakers (M. C. B.s)Solid State Relay ABB Model no. for ABB Model no. for Wire cross Minimum length oftype Z - type M. C. B. B - type M. C. B. sectional area [mm2] Cu wire conductor [m]9(rated current) (rated current)RGS1S..20 1-poleS201 - Z4 (4A) S201 - B2 (2A) 1.021.0S201 - Z6 UC (6A) S201 - B2 (2A) 1.021.01.531.5RGS1S..30 1-poleS201 - Z10 (10A) S201-B4 (4A) 1.07.61.511.42.519.0S201 - Z16 (16A) S201-B6 (6A) 1.0 5.21.57.82.513.04.020.8S201 - Z20 (20A) S201-B10 (10A) 1.512.62.521.0S201 - Z25 (25A) S201-B13 (13A) 2.525.04.040.02-poleS202 - Z25 (25A) S202-B13 (13A) 2.519.04.030.4RGS1S..31 1-poleS201 - Z20 (20A) S201-B10 (10A) 1.5 4.22.57.04.011.2S201 - Z32 (32A) S201-B16 (16A) 2.513.04.020.86.031.22-poleS202 - Z20 (20A) S202-B10 (10A) 1.5 1.82.53.04.0 4.8S202 - Z32 (32A) S202-B16 (16A) 2.5 5.04.08.06.012.010.020.0S202 - Z50 (50A) S202-B25 (25A) 4.014.86.022.210.037.0RGS1S..61 1-poleRGS1S..92S201 - Z32 (32A) S201-B16 (16A) 2.5 3.04.0 4.86.07.2S201 - Z50 (50A) S201-B25 (25A) 4.0 4.86.07.210.012.016.019.2S201 - Z63 (63A) S201-B32 (32A) 6.07.210.012.016.019.29. Between MCB and Load (including return path which goes back to the mains).Note: A prospective current of 6kA and a 230/400V power supply system is assumed for the above suggested specifications. For cables with different cross section than those mentioned above please consult Carlo Gavazzi's Technical Support Group.AccessoriesMounting Instructions for RGS1DIN to RGSOrdering KeyThis DIN Clip accessory can be mounted to any RGS model and will enable the RGS to be DIN rail mount. Current rating @ 40˚C is 10AAC. Refer to ‘Current Derating’ section for Space Derating.DIN clip accessoryRGS1DINRG DIN ClipThe RG Power Module is gradually tightened (alternating between the 2 screws) to a maximum torque of 1.5Nm.Once the power module is tightened to the RGS1DIN, the control module can be mounted on top of the power module and screwed with a torque of 0.3Nm to ensure good contact between the 2 units.Accessories (cont.)Current Derating (RGS1S + RGS1DIN)RGS1DIN DimensionsInstallation InstructionsThermal PadsOrdering KeyThermal pad mounted on RGS RGS...HT Pack of 10 thermal pads size 34.6 x 14mmRGHT。

论文写作常用英语语法

Introduction很多文献已经讨论过了A. Solar energy conversion by photoelectrochemical cells has been intensively investigated. (Nature 1991, 353, 737 - 740 )B.This was demonstrated in a number of studies that showed that composite plasmonic-metal/semiconductor photocatalysts achieved significantly higher rates in various photocatalytic reactions compared with their pure semiconductor counterparts.C. Several excellent reviews describing these applications are available, and we do not discuss these topicsD.Much work so far has focused on wide band gap semiconductors for water splitting for the sake of chemical stability.（DOI:10.1038/NMAT3151）E. Recent developments of Lewis acids and water-soluble organometallic catalysts have attracted much attention.（Chem. Rev. 2002, 102, 3641−3666）F. An interesting approach in the use of zeolite as a water-tolerant solid acid was described by Ogawa et al（Chem.Rev. 2002, 102, 3641−3666）G. Considerable research efforts have been devoted to the direct transition metal-catalyzed conversion of aryl halides toaryl nitriles. (J. Org. Chem. 2000, 65, 7984-7989)H. There are many excellent reviews in the literature dealing with the basic concepts of the photocatalytic processand the reader is referred in particular to those by Hoffmann and coworkers,Mills and coworkers, and Kamat.(Metal oxide catalysis,19,P755)I. Nishimiya and Tsutsumi have reported on（proposed）the influence of the Si/Al ratio of various zeolites on the acid strength, which were estimated by calorimetry using ammon ia. (Chem.Rev. 2002, 102, 3641−3666)二、在results and discussion中经常会用到的：如图所示A. GIXRD patterns in Figure 1A show the bulk structural information on as-deposited films.B. As shown in Figure 7B, the steady-state current density decreases after cycling between 0.35 and 0.7 V, which is probably due to the dissolution of FeOx.C. As can be seen from parts a and b of Figure 7, the reaction cycles start with the thermodynamically most favorable VOx structures（J. Phys. Chem. C 2014, 118, 24950−24958）这与XX能够相互印证：A. This is supported by the appearance in the Ni-doped compounds of an ultraviolet–visible absorption band at 420–520nm (see Fig. 3 inset), corresponding to an energy range of about 2.9 to 2.3 eV.B. This is consistent with the observation from SEM–EDS. (Z.Zou et al. / Chemical Physics Letters 332 (2000) 271–277)C. This indicates a good agreement between the observed and calculated intensities in monoclinic with space groupP2/c when the O atoms are included in the model.D. The results are in good consistent with the observed photocatalytic activity...E. Identical conclusions were obtained in studies where the SPR intensity and wavelength were modulated by manipulating the composition, shape,or size of plasmonic nanostructures.F. It was also found that areas of persistent divergent surface flow coincide with regions where convection appears to be consistently suppressed even when SSTs are above 27.5°C.1. 值得注意的是...A. It must also be mentioned that the recycling of aqueous organic solvent is less desirable than that of pure organic liquid.B. Another interesting finding is that zeolites with 10-membered ring pores showed high selectivities (>99%) to cyclohexanol, whereas those with 12-membered ring pores, such as mordenite, produced large amounts of dicyclohexyl ether. (Chem. Rev. 2002, 102, 3641−3666)C. It should be pointed out that the nanometer-scale distribution of electrocatalyst centers on the electrode surface is also a predominant factor for high ORR electrocatalytic activity.D. Notably, the Ru II and Rh I complexes possessing the same BINAP chirality form antipodal amino acids as the predominant products. (Angew. Chem. Int. Ed., 2002, 41: 2008–2022)E. Given the multitude of various transformations published, it is noteworthy that only very few distinct activation methods have been identified. (Chem. Soc. Rev., 2009, 38, 2178-2189)F. It is important to highlight that these two directing effects will lead to different enantiomers of the products even if both the “H-bond-catalyst” and the catalyst acting by steric shielding have the same absolute stereochemistry. (Chem. Soc. Rev., 2009, 38, 2178-2189)G. It is worthwhile mentioning that these PPNDs can be very stable for several months without the observations of any floating or precipitated dots, which is attributed to the electrostatic repulsions between the positively charge PPNDs resulting in electrosteric stabilization.(Adv. Mater., 2012, 24: 2037–2041)2....仍然是个挑战A. There is thereby an urgent need but it is still a significant challenge to rationally design and delicately tail or the electroactive MTMOs for advanced LIBs, ECs, MOBs, and FCs. （Angew. Chem. Int. Ed.2 014, 53, 1488 – 1504）B. However, systems that are sufficiently stable and efficient for practical use have not yet been realized.C. It remains challenging to develop highly active HER catalysts based on materials that are more abundant at lower costs. (J. Am. Chem. Soc., 2011, 133, 7296–7299)D. One of the great challenges in the twenty-first century is unquestionably energy storage. (Nature Materials 2005, 4, 366 - 377 )3. 众所周知A. It is well established (accepted) / It is known to all / It is commonly known that many characteristics of functional materials, such as composition,crystalline phase, structural and morphological features, and the sur-/interface properties between the electrode and electrolyte, would greatly influence the performance of these unique MTMOs in electrochemical energy storage/conversion applications.（Angew. Chem. Int. Ed.2014,53, 1488 – 1504）B. It is generally accepted (believed) that for a-Fe2O3-based sensors the change in resistance is mainly caused by the adsorption and desorption of gases on the surface of the sensor structure. (Adv. Mater. 2005, 17, 582)C. As we all know, soybean abounds with carbon, nitrogen and oxygen elements owing to the existence of sugar, proteins and lipids. (Chem. Commun., 2012, 48, 9367-9369)D. There is no denying that their presence may mediate spin moments to align parallel without acting alone to show d0-FM. (Nanoscale, 2013, 5, 3918-3930)1. 正如下文将提到的...A. As will be described below（也可以是As we shall see below）, as the Si/Al ratio increases, the surface of the zeolite becomes more hydrophobic and possesses stronger affinity for ethyl acetate and the number of acid sites decreases.（Chem. Rev. 2002, 102, 3641−3666）B. This behavior is to be expected and will be further discussed below. (J. Am. Chem. Soc., 1955, 77, 3701–3707)C. There are also some small deviations with respect to the flow direction, which we will discuss below.（Science, 2001, 291, 630-633）D. Below, we will see what this implies.E. Complete details of this case will be provided at a later time.E. 很多论文中，也经常直接用see below来表示，比如：The observation of nanocluster spheres at the ends of the nanowires is suggestive of a VLS growth process (see below). (Science, 1998, 279, 208-211)3. 我们的研究可能在哪些方面得到应用A. Our ﬁndings suggest that the use of solar energy for photocatalytic water splitting might provide a viable source for ‘clean’ hydrogen fuel, once the catalytic efﬁciency of the semiconductor system has been improved by increasing its surface area and suitable modiﬁcations of the surface sites.B. Along with this green and cost-effective protocol of synthesis, we expect that these novel carbon nanodots have potential applications in bioimaging and electrocatalysis.(Chem. Commun., 2012, 48, 9367-9369)C. This system could potentially be applied as the gain medium of solid-state organic-based lasers or as a component of high value photovoltaic (PV) materials, where destructive high energy UV radiation would be converted to useful low energy NIR radiation. (Chem. Soc. Rev., 2013, 42, 29-43)D. Since the use of graphene may enhance the photocatalytic properties of TiO2 under UV and visible-light irradiation, graphene–TiO2 composites may potentially be used to enhance the bactericidal activity. (Chem. Soc. Rev., 2012, 41, 782-796)E. It is the first report that CQDs are both amino-functionalized and highly fluorescent, which suggests their promising applications in chemical sensing.(Carbon, 2012, 50, 2810–2815)1.A. However,systems that are sufficiently stable and efficient for practical use have not yet been realized.B. Nevertheless,for conventional nanostructured MTMOs as mentioned above, some problematic disadvantages cannot be overlooked.（Angew. Chem. Int. Ed.2014,53, 1488 – 1504）C. There are relatively few studies devoted to determination of cmc values for block copolymer micelles. (Macromolecules 1991, 24, 1033-1040)D. This might be the reason why, despite of the great influence of the preparation on the catalytic activity of gold catalysts, no systematic study concerning the synthesis conditions has been published yet. (Applied Catalysis A: General2002, 226, 1–13)E. These possibilities remain to be explored.F. Further effort is required to understand and better control the parameters dominating the particle surface passivation and resulting properties for carbon dots of brighter photoluminescence. (J. Am. Chem. Soc., 2006, 128 , 7756–7757)2.A. Liquid ammonia is particularly attractive as an alternative to water due to its stability in the presence of strong reducing agents such as alkali metals that are used to access lower oxidation states.B. The unique nature of the cyanide ligand results from its ability to act both as a σ donor and a π acceptor combined with its negativecharge and ambidentate nature.C. Qdots are also excellent probes for two-photon confocal microscopy because they are characterized by a very large absorption cross section (Science 2005, 307, 538-544).D. As a result of the reductive strategy we used and of the strong bonding between the surface and the aryl groups, low residual currents (similar to those observed at a bare electrode) were obtained over a large window of potentials, the same as for the unmodified parent GC electrode. (J. Am. Chem. Soc. 1992, 114, 5883-5884)E. The small Tafel slope of the defect-rich MoS2 ultrathin nanosheets is advantageous for practical applications, since it will lead to a faster increment of HER rate with increasing overpotential.(Adv. Mater., 2013, 25: 5807–5813)F. Fluorescent carbon-based materials have drawn increasing attention in recent years owing to exceptional advantages such as high optical absorptivity, chemical stability, biocompatibility, and low toxicity.(Angew. Chem. Int. Ed., 2013, 52: 3953–3957)G. On the basis of measurements of the heat of immersion of water on zeolites, Tsutsumi etal. claimed that the surface consists of siloxane bondings and is hydrophobicin the region of low Al content. (Chem. Rev. 2002, 102, 3641−3666)H.Nanoparticle spatial distributions might have a large significance for catalyst stability,given that metal particle growth is a relevant deactivation mechanism for commercial catalysts.A. The inhibition of additional nucleation during growth, in other words, the complete separation of nucleation and growth, is critical(essential, important) for the successful synthesis of monodisperse nanocrystals. (Nature Materials 3, 891 - 895 (2004))B. In the current study, Cys, homocysteine (Hcy) and glutathione (GSH) were chosen as model thiol compounds since they play important (significant, vital, critical) roles in many biological processes and monitoring of these thiol compounds is of great importance for diagnosis of diseases.(Chem. Commun., 2012, 48, 1147-1149)C. This is because according to nucleation theory, what really matters in addition to the change in temperature ΔT (or supersaturation) is the cooling rate.(Chem. Soc. Rev., 2014, 43, 2013-2026)1.A. On the contrary, mononuclear complexes, called single-ion magnets (SIM), have shown hysteresis loops of butterfly/phonon bottleneck type, with negligible coercivity, and therefore with much shorter relaxation times of magnetization. (Angew. Chem. Int. Ed., 2014, 53: 4413–4417)B. In contrast, the Dy compound has significantly larger value of the transversal magnetic moment already in the ground state (ca. 10−1μB), therefore allowing a fast QTM. （Angew. Chem. Int. Ed., 2014, 53: 4413–4417）C. In contrast to the structural similarity of these complexes, their magnetic behavior exhibits strong divergence. (Angew. Chem. Int. Ed., 2014, 53: 4413–4417)D. Contrary to other conducting polymer semiconductors, carbon nitride is chemically and thermally stable and does not rely on complicated device manufacturing. (Nature materials, 2009, 8(1): 76-80.)E. Unlike the spherical particles they are derived from that Rayleigh light-scatter in the blue, these nanoprisms exhibit scattering in the red, which could be useful in developing multicolor diagnostic labels on the basis not only of nanoparticle composition and size but also of shape. (Science 2001, 294, 1901-1903)2.可供选择的词包括：verify, confirm, elucidate, identify, define, characterize, clarify, establish, ascertain, explain, observe, illuminate, illustrate，demonstrate, show, indicate, exhibit, presented, reveal, display, manifest，suggest, propose, estimate, prove, imply, disclose，report, describe，facilitate the identification of举例：A. These stacks appear as nanorods in the two-dimensional TEM images, but tilting experiments confirm that they are nanoprisms. (Science 2001, 294, 1901-1903)B. Note that TEM shows that about 20% of the nanoprisms are truncated. (Science 2001, 294, 1901-1903)C. Therefore, these calculations not only allow us to identify the important features in the spectrum of the nanoprisms but also the subtle relation between particle shape and the frequency of the bands that make up their spectra. (Science 2001, 294, 1901-1903)D. We observed a decrease in intensity of the characteristic surface plasmon band in the ultraviolet-visible (UV-Vis) spectroscopy for the spherical particles at λmax = 400 nm with a concomitant growth of three new bands of λmax = 335 (weak), 470 (medium), and 670 nm (strong), respectively. (Science 2001, 294, 1901-1903)E. In this article, we present data demonstrating that opiate and nonopiate analgesia systems can be selectively activated by different environmental manipulations and describe the neural circuitry involved. (Science 1982, 216, 1185-1192)F. This suggests that the cobalt in CoP has a partial positive charge (δ+), while the phosphorus has a partial negative charge (δ−), implying a transfer of electron density from Co to P. (Angew. Chem., 2014, 126: 6828–6832)3.A. Although these inorganic substructures can exhibit a high density of functional groups, such as bridging OH groups, and the substructures contribute significantly to the adsorption properties of the material,surprisingly little attention has been devoted to the post-synthetic functionalization of the inorganic units within MOFs. (Chem. Eur. J., 2013, 19: 5533–5536.)B. Little is known, however, about the microstructure of this material. (Nature Materials 2013,12, 554–561)C. So far, very little information is available, and only in the absorber film, not in the whole operational devices. （Nano Lett., 2014, 14 (2), pp 888–893）D. In fact it should be noted that very little optimisation work has been carried out on these devices. (Chem. Commun., 2013, 49, 7893-7895)E. By far the most architectures have been prepared using a solution processed perovskite material, yet a few examples have been reported that have used an evaporated perovskite layer. (Adv. Mater., 2014, 27: 1837–1841.)F. Water balance issues have been effectively addressed in PEMFC technology through a large body of work encompassing imaging, detailed water content and water balance measurements, materials optimization and modeling, but very few of these activities have been undertaken for anion exchange membrane fuel cells, primarily due to limited materials availability and device lifetime. (J. Polym. Sci. Part B: Polym. Phys., 2013, 51: 1727–1735)G. However, none of these studies tested for Th17 memory, a recently identified T cell that specializes in controlling extracellular bacterial infections at mucosal surfaces. (PNAS, 2013, 111, 787–792)H. However, uncertainty still remains as to the mechanism by which Li salt addition results in an extension of the cathodic reduction limit. (Energy Environ. Sci., 2014, 7, 232-250)I. There have been a number of high profile cases where failure to identify the most stable crystal form of a drug has led to severe formulation problems in manufacture. (Chem. Soc. Rev., 2014, 43, 2080-2088)J. However, these measurements systematically underestimate the amount of ordered material. ( Nature Materials 2013, 12, 1038–1044)1. 取决于a. This is an important distinction, as the overall activity of a catalyst will depend on the material properties, synthesis method, and other possible species that can be formed during activation. (Nat. Mater. 2017,16,225–229)b. This quantitative partitioning was determined by growing crystals of the 1:1 host–guest complex between ExBox4+ and corannulene. (Nat. Chem. 2014, 6177–178)c. They suggested that the Au particle size may be the decisive factor for achieving highly active Au catalysts.(Acc. Chem. Res., 2014, 47, 740–749)d. Low-valent late transition-metal catalysis has become indispensable to chemical synthesis, but homogeneous high-valent transition-metal catalysis is underdeveloped, mainly owing to the reactivity of high-valent transition-metal complexes and the challenges associated with synthesizing them. (Nature2015, 517,449–454)e. The polar effect is a remarkable property that enables considerably endergonic C–H abstractions that would not be possible otherwise. (Nature 2015, 525, 87–90)f. Advances in heterogeneous catalysis must rely on the rational design of new catalysts. (Nat. Nanotechnol. 2017, 12, 100–101)g. Likely, the origin of the chemoselectivity may be also closely related to the H bonding with the N or O atom of the nitroso moiety, a similar H-bonding effect is known in enamine-based nitroso chemistry. (Angew. Chem. Int. Ed. 2014, 53: 4149–4153)2. 有很大潜力a. The quest for new methodologies to assemble complex organic molecules continues to be a great impetus to research efforts to discover or to optimize new catalytic transformations. (Nat. Chem. 2015,7, 477–482)b. Nanosized faujasite (FAU) crystals have great potential as catalysts or adsorbents to more efficiently process present and forthcoming synthetic and renewable feedstocks in oil refining, petrochemistry and fine chemistry. (Nat. Mater. 2015, 14, 447–451)c. For this purpose, vibrational spectroscopy has proved promising and very useful. (Acc Chem Res. 2015, 48, 407–413.)d. While a detailed mechanism remains to be elucidated and there is room for improvement in the yields and selectivities, it should be remarked that chirality transfer upon trifluoromethylation of enantioenriched allylsilanes was shown. (Top Catal. 2014, 57: 967. )e. The future looks bright for the use of PGMs as catalysts, both on laboratory and industrial scales, because the preparation of most kinds of single-atom metal catalyst is likely to be straightforward, and because characterization of such catalysts hasbecome easier with the advent of techniques that readily discriminate single atoms from small clusters and nanoparticles. (Nature 2015, 525, 325–326)f. The unique mesostructure of the 3D-dendritic MSNSs with mesopore channels of short length and large diameter is supposed to be the key role in immobilization of active and robust heterogeneous catalysts, and it would have more hopeful prospects in catalytic applications. (ACS Appl. Mater. Interfaces, 2015, 7, 17450–17459)g. Visible-light photoredox catalysis offers exciting opportunities to achieve challenging carbon–carbon bond formations under mild and ecologically benign conditions. (Acc. Chem. Res., 2016, 49, 1990–1996)3. 因此同义词：Therefore, thus, consequently, hence, accordingly, so, as a result这一条比较简单，这里主要讲一下这些词的副词词性和灵活运用。

美国SSL产品和测试标准-小

5
2011‐4‐19

美国DOE 计划的目标
6
2011‐4‐19

NGL（次世代照明产业联盟）
SSL产品的主要特征：
• 高效率产品（理论上没问题的） • 产品具有很大的自由度 – 色温、色彩可以有各种规格，可调光色温色彩可以有各种规格可调光 – 灯具的结构可以是各种形式 • 长寿命 • “点”光源（LED） – 间接隐藏式照明
15
2011‐4‐19

美国SSL产品及测试标准
16
2011‐4‐19

美国SSL产品及测试标准
17
2011‐4‐19

美国SSL产品及测试标准
18
2011‐4‐19

IESNA LM-79 Approved Method for Electrical and Photometric Measurement of SSL Products Test method used for DOE SSL Energy Star Covers LED luminaires and integrated LED lamps. Covers measurements of • Total luminous flux (lumen) • Luminous efficacy (lm/W) • Chromaticity, CCT, CRI (4 π integrated) • Luminous intensity distributions Methods using
4
2011‐4‐19

美国的能源政策
• 1975能源政策和保护法案（Public Law 94‐163） – 起源于七十年代初的石油危机。起源于七十年代初的石油危机 • 1992能源法案（Public Law 102‐486） – 控制反射型钨丝灯的使用（卤钨反射灯） – 控制低效率的直管型荧光灯的使用（40W T12 卤磷酸钙荧光灯不再使用） • 2001年能源法案 – 由美国能源部DOE针对节凑型荧光灯CFL，制订能源之星计划 • 2009年能源法案 – 为了限制白炽灯的应用，推动固态照明SSL的发展 • 美国DOE 五年发展计划（2008‐2012） – 促进能被市场接受的SSL产品平的发展 – 从节能的角度支持SSL产品的应用 – 至2012年实现SSL产品进入普通照明市场

HSISensing 电感传感器说明书

Power Watts - maximum 6Voltage VDC - maximum 30Amp - maximum 0.2Open Circuit LeakageµAmp - maximum 10Resistance Closed Circuit Resistance Ohm - maximum .9Operating °C -35° to 70°Storage°C-35° to 70°Housing Material Aluminum Air Gap Range Distance Inches 0 to 0.1875External Connection 22 AWG UL 1007PVC Lateral Alignment DistanceInches0.1875Mounting Environment Indoor or OutdoorIngress or Egress DoorsFerrous or Nonferrous SurfacesMounting OrientationNotes:(1)(2)(3)(4)(5)(6)(7)For information about performance, custom configurations (i.e. wire length or color; connectors; operational variation), orpackaging contact our Sales Department.Engraved targets must face each otherPhysical/Operational SpecificationsElectrical SpecificationsSpecifications are not constant across entire magnetic range.TemperaturePhone: (405) 224-4046 Fax: (405) 224-9423Email:**********************:Address: 3100 Norge Road, Chickasha, OK 73018• Solid state reliabilityHigh Security Solid State Proximity SensorPart Number PRX+12220-0000 Rev. C• Unique output for misalignment • Insensitive to vibration and shock See Sentinel Instruction and Owner's Manual for additional informationAdditional Parts Included: 8 Self-drilling metal security screws (#10 x 2"), 2 Self-drilling metal security screws (#10 x 3/4"), 2Spacers (1/16" Thick)CurrentFeatures Advantages• High sensitivity anti-tamper• ULC/ORD-C634 Level 2 CertifiedCustomer must exercise care in handling and mounting to prevent damage to internal components and subsequent changes tosensor rmation contained hereon is for informational purposes only and should not be deemed as accurate for a specificapplication. Consult factory for specific application information and/or latest revision.Options: housing color, alternate internal resistors, and/or alternate mounting hardware.• Suitable for indoor or outdoor use• Small footprint• UL 634 Level 2 Certified。

1.6 μm波段锁模光纤激光器

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NK技术-电流传感器、电流开关和地闸系列产品说明书

C O N T E N T SATR 0, 1 & 2 SeriesTrue RMSAC Current Transducers2–3AT 0, 1 & 2 SeriesAC Current Transducers4–5ATR 3 & 4 SeriesHigh Current Transducers6–7DT 1, 2, 3 & 4 SeriesDC Current Transducers8–9AS1 Series Current Operated Switches 10–11ASM Series Self CalibratingCurrent Switches12–13AS3 Series Current Operated Switches 14–15AS3M Series Multi-poleCurrent Operated Switches16AG 1, 2 & 3 SeriesGround Fault Sensors17–19DS3 Series DC Current Switches 20–21Accessories s PBR SeriesPowerBASE™ Relays 22s Power Supply23s DIN Universal Rail Clips 23s Instrument Tags23For expert technical help, contact your localAuthorized Representative or Authorized Distributork now your power . . .because with knowledge comes control.PAGEContact us for:s Product Guide s Application Guides Power Transducers, CTs and PTs s Current Transducers and Transmitters s Current Switches sCurrent Fault SensorsDo you have other needs?Industrial Current SensorsA pplicationsVFD Controlled LoadsVFD output indicates how the motor and attached load are operating.SCR Controlled LoadsAccurate measurement of phase angle fired or burst fired (time proportioned)SCRs. Current measurement gives faster response than temperature measurement.Switching Power Supplies and Electronic BallastsTrue RMS sensing is the most accurate way to measure power supply or ballastF eaturessTrue RMS OutputTrue RMS technology is accurate on distorted waveforms like VFD or SCR outputs.s Jumper Selectable Ranges — Reduces inventory.— Eliminates zero and span pots.s Isolation— Output is magnetically isolated from the input for safety.— Eliminates insertion loss (voltage drop).s UL, CUL and CE Approval Accepted worldwide.L I N ETrue RMS AC Current TransducersSelecting the right transducer:VFD and SCR output waveforms are rough approximations of a sine wave.There are numerous spikes and dips in each cycle. ATR transducers use a mathematical algorithm called “True RMS,” which integrates the actual waveform over time. The output is the amperage component of the true power (heating value) of the AC currentwaveform. True RMS is the only way toaccurately measure distorted ACwaveforms. Select ATR transducers for nonlinear loads or in “noisy” power environments.The current waveform of a typical linear load is a pure sine wave. AT transducers measure the peaks of these sine waves,then calculate the average amperage.This works well on constant speed linear loads in a “clean” powerenvironment. Select AT transducers for strictly linear loads on “clean” power.‘ATR’ transducers from NK Technologies combine a currenttransformer and a True RMS signal conditioner into a single package.The ATR Series provides True RMS output on distorted waveforms found on VFD or SCR outputs and on linear loads in “noisy” power environments. Available in a solid or split core case.Instrument Tags allow users to individually identify each NK Technologies sensor in their system. IT Tags are permanent and non conductive. Traditional stamped stainless steel tags present a safety hazard and are not recommended for electrical sensors. Please provide a list of tag numbers with your Purchase Order.Dimensions 0.5" x 1.125"Characters2 lines of 18 characters (8 point).Spaces and dashes count as characters.Power SupplyS pecificationsInput 85–264VAC, 47-400Hz DC Output 24VDC, 25W (1.05A)DC Regulation +/–0.2% (0.048VDC)Dimensions 5.1" x 3.85" x 1.5", 1.5 lb.(13 x 9.8 x 3.8 cm, 700 gm)Environmental 14 to 140°F (–10 to +60°C), 20–90% RH PS series switching power supplies provide highlyregulated 24VDC for NK Technologiestransmitters and switches.Sensor and DIN rail not included in DIN-2 kit.ATR SeriesAccessoriesA pplicationsTotal Loop Impedance (Ohms)Notes:s Pressure plate screw terminals.s 12–22 AWG solid or stranded.s Field adjustable setpoint.Example: DS1-SDT-24UDS current switch, low range with SPDT relay contacts and 24VAC/DC power supply.O rdering InformationPower Supply Isolated Relay Output Isolated Solid State Output 34–20, 10–50 and 15–100A, Jumper Select C Custom (consult factory)SDT SPDT Relay (Form C)NOU Solid State N.O. AC/DC DS24U +24VAC/DC0%utput Operation‘AT’ Current Transducers from NK Technologies combine a current transformer and signal conditioner into a singlepackage. The AT Series has jumper selected currentinput ranges and industry standard4–20mA, 0–5VDC or 0-10VDC outputs. The AT Series is designed for application on ‘linear’ or sinusoidal AC loads.Available in a split core case or two types of solid core cases.A pplicationsAutomation SystemsAnalog current reading for remote monitoring and software alarms.Data LoggersSelf-powered transducer does not drain data logger batteries.Panel MetersSimple connection displays power consumption.L I N EAC Current TransducersAT SeriesAT Current TransducersF eaturessAccurateFactory matched and calibrated single piece transducer is more accurate than traditional two-piece field installed solutions.s Average Responding“Average Responding” algorithm gives a RMS output on pure sine waves. Perfect for constant speed (linear) loads.s Jumper Selectable Ranges — Reduces inventory.— Eliminates zero and span pots.s Isolation— Output is magnetically isolated from the input for safety.— Eliminates insertion loss (voltage drop).s UL, CUL and CE Approval Accepted worldwide.I nput RangesMAXIMUM Model Range Continuous 6 Sec. 1 Sec. AT02A80A 60A 100A 5A100A 124A 250A AT110A80A 125A 250A 20A 110A 150A 300A 50A175A 215A 400A AT2100A200A 300A 600A 150A 300A 450A 800A 200A400A500A 1,000A1m Ω Recommended 100k Ω AcceptableC AC Current TransducersA pplicationsElectric Heating ElementsInstant indication of heater status.Power SuppliesSignals over-current before equipment fails.Machine OperationInstant status of motors, lamps and other loads.Telecom SitesMonitors battery output.‘DS3’ Current Switches from NK Technologies Hall effect sensor, signal conditioner and a limit alarm into a single package. The DS3 Series has three jumper selected current input ranges and frequency response from DC to 400Hz. Available in a top terminal solid core case with either a relay output or a universal solid state output.F eaturessCompact, One-piece DesignFits in crowded motor starters, power supplies and control panels.s Input IsolationMuch safer than shunt/relay combinations.s Output InstallationIsolated output greatly simplifies wiring.s ToughDesigned to handle harsh industrial environments.s Adaptive Hysteresis— Hysteresis is 5% of setpoint.— Allows closer control than fixed hysteresis.s ReliableSolid state design.s Built-in Mounting BracketSolid, secure mounting that inspectors want to see.DC Current SwitchesDS3 Seriess –FT Case : 0.75" (19mm) dia.s –SP Case: 0.85" (21.5mm) sq.CaseUL 94V-0 flammability ratedEnvironmental –4 to 122°F (–20 to 50°C), 0–95% RH, non-condensing ListingsUL 508 Industrial Control Equipment (USA & Canada), CErdering InformationExample: AT1-005-000-SPAC current transducer, 10/20/50A range, self-powered with a 0–5VDC output in a split core case.Ranges 02 & 5A 110, 20, 50A 2100, 150, 200A 4204–20mA 0050-5VDC 0100-10VDC 24L 24VDC Loop-powered (4–20mA output ONLY)000 Self-powered (0–5/0–10VDC output ONLY)ATFF Fixed Core,Front Term.FT Fixed Core,Top Term.SP Split CoreP L o o p P o w e r (V D C )Normally Energized Models (–FS Option)Protection from faultsand loss ofcontrol power.No Power No Fault Fault N.C. Normally Closed Closed OPEN Closed N.O. Normally OpenOpenCLOSEDOpenNormally Deenergized Models (–NF Option)Protection from faultsonly when control poweris applied.No Power No Fault Fault N.C. Normally Closed Closed CLOSED Open N.O. Normally OpenOpenOPENClosedLatching (–LA Option)Latching models initially power up in the Reset position.If there is a fault or the test button is pressed, the output switches and is latched. The output will remain latched after the fault is cleared, even if control power is removed. To reset the output, apply a momentary contact across the “Reset” terminals (6–7).O utput TableControl Power Applied Control Power Applied S pecificationsSetpoint Ranges “Single-Set” Models Factory adjusted and sealed(field adjustment possible)s AG1: 5–100mA, specify when ordering s AG2: 80–950mA, specify when orderings “Tri-Set” Models 5, 10 & 30mA jumper select Output Isolated dry contact (solid state or relay,see Ordering Information)Output Ratings Solid State AC Switch: 1A @ 240VAC s Solid State DC Switch: 0.15A 30VDC s Relay: 0.5A @ 125VAC, 2A @VDCOff State Leakage NoneResponse Times 200mS @ 5% above setpoint s 60mS @ 50% above setpoint s 15mS @ 500% above setpointIsolation Voltage Up to 1,250VAC (monitored circuit)Frequency Range 50–400Hz (monitored circuit)Sensing Aperture 0.75" (19mm) dia., up to 4" (100mm) dia.available, consult factory.Power Supplys 120, 200, 208, 220, 240VAC, 50-400Hz, operates from 55–110% of nominal voltage s 24VAC & 24VDC, operates +/–10%s Green LED = power (all models)Case UL 94V-O Flammability rated Environmental 5 to 158°F (–15 to 70°C),0-95% RH, non-condensing‘AT/ATR 3 & 4’ transducers from NK Technologies combine a high capacity current transformer and a signal conditioner into a single package. The AT version is Average Responding for use on linear(sinusoidal) loads. The ATR version is True RMS for use on distorted waveforms found in VFD or SCR outputs.Available in a solid or split core case.A pplicationsLarge PumpsDetect dry run electronically.GenerationMeasure the output of generators.Electric Heating Elements — Monitors heater load.— Faster response than temperature sensors.F eaturessLarge ApertureAccommodates large conductors or wire bundles.sSelect the Right OutputTrue RMS technology is accurate on distorted waveforms like VFD or SCR outputs.Average Responding—for linear,sinusoidal waveformss Three Jumper Selectable Ranges — Reduces inventory.— Eliminates zero and span pots.IsolationMagnetic isolation protects installers and systems.Easy InstallationSingle piece with integral mounting brackets makes for a simple, solid installation.UL, CUL and CE Approval Accepted worldwide.Selecting the right transducer:The current waveform of a typical linear load is a pure sine wave. AT transducers measure the peaks of these sine waves,then calculate the average amperage.This works well on constant speed linear loads in a “clean” powerenvironment. Select AT transducers for strictly linear loads on “clean” power.VFD and SCR output waveforms are rough approximations of a sine wave.There are numerous spikes and dips in each cycle. ATR Transducers use a mathematical algorithm called “True RMS,” which integrates the actual waveform over time. The output is the amperage component of the true power (heating value) of the AC currentwaveform. True RMS is the only way to accurately measure distorted ACwaveforms. Select ATR transducers for nonlinear loads on “noisy” power.LI NEAT/ATR 3 & 4 SeriesShown withsolid core case.Example: AG1-NOAC-120-005-FSGround fault sensor with normally open solid state output, 120VAC power supply, 5mA setpoint, fail safe version.24U 24VAC/DC 120120VAC 200200VAC208208VAC 240240VAC NCAC Normally Closed 1A @ 240VACNOAC Normally Open 1 A @ 240VACNCDC Normally Closed 0.15A @ 30VDC NODC Normally Open 0.15A @ 30VDCNCR1Normally Closed Relay,0.5A @ 125VAC, 2A @ 30VDC NOR1 Normally Open Relay,0.5A @ 125VAC, 2A @ 30VDCCR1Form C Relay (SPDT) 0.5A @ 125VAC, 2A @ 30VDC(available only with LA Latching Option)TR3Tri-Set Models 005Factory AdjustedSetpoint in mA 950AGO rdering Information15–100mA, Adjustable 280–950mA, Adjustable35, 10 & 30mA, Jumper SelectFS Normally Energized NF Normally Deenergized LA Latching (available only with CR1 Output Option)k now your power . . .because with knowledge comes control.Specifications Output Signal 4–20mA, Loop-powered Output Limit 23mAAccuracy1.0% FS accuracy, True RMS Measurement True RMS or Average Responding (see Ordering Information)Response Time 500mS (to 90% of step change)Frequency Range s ATR: 10–400HzsAT: 50–60Hz, SinusoidalPower Supply 24VDC Nominal; 40VDC Maximum Isolation Voltage 600VACInput Ranges s AT/ATR3: 375, 500, 750A s AT/ATR4: 1000, 1333, 2000A Sensing Aperture 3.0" (76mm) dia.CaseUL 94 Flammability rated Environmental –4 to 122°F (–20 to 50°C),0–95% RH, non-condensingListingsUL 508 Industrial Control Equipment s Observe polarity.Example: ATR4-420-24L-FLTrue RMS AC current transducer, 24VDC powered with a 4–20mA output, 375, 500 and 750 amp range in a fixed core case.*R True RMS—Average Responding (Blank)420 4–20mAFL Fixed Core ATO rdering Information24L 24VDC Loop-poweredC onnectionsTypical of Latching VersionTypical of Auto-reset VersionTotal Loop Impedance (Ohms)L o o p P o w e r (V D C )P Ranges 3375, 500,750A41000, 1333,2000A*Split core version available in the Spring of 2000.for Tri-Set ModelsTypical of Latching VersionTypical of Auto-reset Version Notes:s Dead front terminals.s Connections are not polarity sensitive.AG Series Latching version shown.A pplicationsBattery Banks— Monitors load current.— Monitors charging current.— Verifies operation.TransportationMeasures traction power orauxiliary loads.Electric Heating Elements Faster response than temperature sensors.ToDC Current TransducersDT SeriesA pplicationsPersonnel Protection (typically 5mA)Senses low fault currents and alarms to shut power before injury occurs.Equipment Protection (typically 30mA)When personal protection is not an issue, select a higher setpoint to protect equipment or product Regulatory ApprovalMeet requirements by industry groups and governments for Ground Fault Protection.Operating Principal: Under normal conditions, the current in the hot leg of a two-wire load is equal in strength but opposite in sign to the current in the neutral leg. These two currents create magnetic fields that are also equal but opposite. When the wires are next to each other, the fields cancel,producing a “Zero Sum Current”. If any current leaks to ground from one wire (Ground Fault), the two currentsbecome imbalanced and the result is a net magnetic flux or field. AG Series ground fault sensors monitor this field and alarm when leakage rises above setpoint. This concept applies togrounded 3-phase delta and wye systems.Ground Fault SensorsF eaturessOperation to Match Your Application:Latching—For controlling contactors.Auto-Reset—For controlling shunt trip breakers.s Setpoint Options to Match Your Needs:Tri-Set —Field select 5, 10 or 30mA.Fast and convenient. (AG3 only)Single-Set —Factory adjustedsetpoint. Specify 5–100mA (AG1) or 80–950mA (AG2) when ordering.s Compatible with Standard EquipmentWorks on 1φ or 3φ power. Controls standard shunt trip breakers or contactors. Tie into Emergency Circuits (EMO/EPO).s IsolatedMagnetically isolated from themonitored circuit and control power s UL and CE Approval Accepted worldwide.L I N EEasy to Apply on 1φ or 3φ AG Series‘AG’ Series sensors from NK Technologies protect people, products and processes from ground faults by monitoring all current-carrying wires in grounded single or 3-phase systems.DC Current Transducers‘DT’ Current Transducers from NK Technologies combine aHall effect sensor and signal conditioner into a single package. The DT Series has jumper selectable current input ranges and industry standard 0–20mA, 4–20mA, 0–3VDC, 0–5VDC or 0–10VDC outputs.Available in a split core package.F eaturessThree Jumper Selectable Ranges — Reduces inventory.— Eliminates zero and span pots.sIsolation— Output is magnetically isolated from the input for safety.— Eliminates insertion loss (voltage drop).s Internal Power Regulation— Works well, even with unregulated power.— Cuts installation costs.s Easy InstallationSplit core design with built-inmounting brackets makes installation a snap.Auto-reset version shown.A pplicationsPump ControlIndividually adjustable indication of overload (jam) and underload (suction loss).Dual AlarmEasy setup for dual level alarms.F eaturessMulti-pole OutputMonitor two setpoints with one sensor.s Self-poweredCuts installation and operating costs.s Easily Adjustable Setpoint Speeds startup.s Solid or Split Core CaseChoose the right version for each installation.s Built-in Mounting Bracket Provides the solid installation inspectors want.s UL, CUL and CE Approval Accepted worldwide.I Over/Under Current Alarm Over/Under Current Alarm with One Input (JumperIExample: AS3M-CCDC-FFAdjustable multipole current switch, “Super”Form C output, fixed core with front terminals.Output Rating AADC Dual Normally Open,Individually Adjustable,0.15A @ 30VDC CCDC “Super” Form C SPDT,Individually Adjustable,0.15A @ 30VDCCase Style FF Fixed Core,Front Term.AS3MO rdering InformationAS3M Series‘AS3M’ Current Switches are a multi-pole version of the popular AS3 Series. The AS3M Series combines a current transformer, signal conditioner and two limit alarms into a single package. The AS3Series has three jumper-selected current input ranges, solid-state DC output and a wide frequency range. Available in a front terminal solid core case.S pecificationsSee page 15, “AS3 Series” specifications and dimensional drawings.Multi-pole Current Operated SwitchesO utput PolarityDC Current Transducers0–95% RH, non-condensing10050020–50 VDC or Output loop is powered byDT Transducer. No loop power supply required.Notes:s Deadfront captive screw terminals.s 12–22 AWG solid or stranded.s Observe polarity.U UnipolarExample: DT2-420-24U-USplit core DC/DC current switch, mid range, 24VAC/DC powered with a 4–20mA output that is unipolar.O rdering Information1 50, 75, 100A2 100, 150, 200A3 150, 225, 300A4 200, 300, 400A C Custom Range0200–20mA 4204–20mA 0030–3VDC 0050–5VDC 0100–10VDCDT24U +24VAC/DC *Bipolar version available in mid 2000.AS1 Series‘AS1’ Current Switches fromNK Technologiescurrent transformer, signalconditioner and limit alarm intoa single package. The AS1 serieshas an extended current inputrange, universal solid-stateoutputs and a wide frequencyresponse. Available in a splitCurrent Operated Switchess Terminals are #6 screws.s DC contacts are polarity sensitive.Current Operated SwitchesA pplicationsElectronic Proof of Flow— No need for pipe or duct penetrations.— More reliable than electro-mechanical pressure or flow switches.Conveyors— Detects jams and overloads.— Interlocks multiple conveyor sections.Lighting CircuitsEasier to install and more accurate than photocells.Electric HeatersFaster response than temperature sensors.selected current input ranges,solid-state AC output and a widefrequency range. Available in asplit core or front terminal solidcore case.LINEF eaturess Choice of Outputs— Solid state switch N.C. or N.O.— 1A @ 240VAC.— 15A @ 120VAC.s Self-poweredCuts installation and operating costs.s Adjustable SetpointSpeeds startup.s Solid or Split Core CaseChoose the right version for eachinstallation.s Built-in Mounting BracketProvides the solid installationinspectors want.s UL, CUL and CE ApprovalAccepted worldwide.Example: AS1-NOU-SPNOU NormallyOpenNCU NormallyClosedFF Fixed Core, Front Term.FT Fixed Core, Top Term.SP Split CoreAS1O rdering InformationNotes:s Terminals are #6 screws.s Normally open contacts shown (NOU).s Normally closed contacts similar (NCU).Typical ofModels with LEDTypical ofGo/No-Go ModelsResponse Time0.120 SecondSetpoint Range s Fixed Core: 1–150As Split Core: 1.5–150AHysteresis5% of SetpointOverload MODEL CONTINUOUS 6 SEC 1 SECs–GO250A500A1,000A (NOU)s–GO150A400A1,000A (NCU)s All Other150A400A1,000AIsolation Voltage UL Listed to 1,270VAC, tested to 5,000VACFrequency Range6–100HzSensing Aperture s–FF Case: 0.55" (14mm) dia.s–FT Case: 0.75" (19mm) dia.s–SP Case: 0.85" (21.5mm) sq.Case UL 94V-O Flammability ratedEnvironmental–58 to 149°F (–50 to 65°C),0–95% RH, non-condensingListings UL 508 Industrial Control EquipmentGO Go/No-Go Version(Fixed Setpoint)NL No LED—With LED (Blank)ASM SeriesSelf-Calibrating Current Switches。

微波固态功率放大器的研制

Key Words ： Microwave solid-state power amplifier ,push-pull power amplifier, Lateral Diffuse MOS FET, pulsed output power
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杭州电子科技大学学位论文原创性声明和使用授权说明
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杭州电子科技大学硕士学位论文
1 绪论
1.1 课题背景与研究意义
本论文研究工作是为中国电子科技集团公司第五十研究所研制微波固态大功率放大器，目的是为某脉冲式谐波雷达项目提供大的脉冲功率输出，由于以前没有像这么大功率输出的功率放大器的设计经历和经验，再加上项目时间紧迫，因此论文的工作量很大，且时间也很紧迫。诸如这些原因，我首先查阅了国内外关于固态雷达发射机的相关书籍[1][2]，同时也检索了 IEEE 等上面的关于大功率放大器的几十篇相关文献，对固态雷达发射机的工作原理、设计方法以及关键问题等有了一个总体的把握和理解，特别对于大功率的固态功率放大器有了一个比较深刻的理解，这为论文的研究做了有利的铺垫。本课题要求实现比较大的脉冲输出功率，传统的设计大功率放大器是用真空管来实现，但是用真空管设计有很多的缺点，随着半导体器件的不断发展，用半导体器件来设计大功率放大器显示出比真空管无比的优越性，通过比较得到固态器件的优点
原创性声明
本人郑重声明：所呈交的学位论文，是本人在导师的指导下，独立进行研究工作所取得的成果。除文中已经注明引用的内容外，本论文不含任何其他个人或集体已经发表或撰写过的作品或成果。对本文的研究做出重要贡献的个人和集体，均已在文中以明确方式标明。申请学位论文与资料若有不实之处，本人承担一切相关责任。

ALPS电子产品说明书

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8-Pin SOIC (6,0 mm x 4,9 mm x 1,4 mm)
Magnetic Sensor IC Product Line Card
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1Measurements given do not include lead dimensions. 2Not all lead or packaging combinations are possible. Contact Honeywell Customer Service at 1-800-537-6945 for assistance.

光学传感器产品数据手册说明书

Datasheet•Compact and lightweight; ideal for use on robotic end effectors •Class 2 laser diode light source•Convergent beam models have precise, high-energy sensing spot atfocus, available in four focal lengths: 50 mm (2 in), 100 mm (4 in), 200mm (8 in), and 300 mm (12 in)•Retroreflective models have precise, narrow beam; excellent for sensing the presence of tiny parts at close range, small parts at medium ranges,and for accurate sensing over long distances•Fast, 0.2 millisecond sensing response for high-speed sensing or counting•10 to 30 V dc operation; choice of NPN or PNP complementary solid state output•Choose models with 2 m (6.5 ft) or 9 m (30 ft) unterminated cable, or with 150 mm (6 in) Euro-style pigtail quick-disconnect (QD) connectorRetroreflective-Mode Models . Excellent for applications where high sensing power and small beam size are important.Operates over sensing ranges typically accomplished only by conventional opposed-mode photoelectrics; uses a special filter to polarize the emitted light, filtering out unwanted reflections from shiny objects. (Visible Red; Class 2 laser; 650nm)To order 9 m (30 ft) cables, add the suffix “W/30” to the model number of any cabled sensor (e.g., PD45VN6LLP W/30).Models with QD connectors require an optional mating cable.Convergent-Mode Models . Excels at sensing small parts and profiles and uses fixed-field technology to ignore objects beyond the maximum sensing distance. (Visible Red; Class 2 laser; 650 nm)PD45 Series PicoDot PolarizedRetroreflective and Convergent Laser SensorsOriginal Document 115700 Rev. B3 May 2016115700 - Tel: +1-763-544-3164P/N 115700 Rev. BWARNING: Not To Be Used for Personnel ProtectionNever use this device as a sensing device for personnel protection. Doing so could lead toserious injury or death. This device does not include the self-checking redundant circuitry necessaryto allow its use in personnel safety applications. A sensor failure or malfunction can cause either anenergized or de-energized sensor output condition.Retroreflective Sensor AlignmentBecause the PicoDot laser sensor has such a long sensing range, and because its beam is so narrow (compared to the beam of typical retro sensors), its alignment is somewhat less forgiving and more difficult to accomplish. As indicated, the effect of angular misalignment can be dramatic, especially over distance. For example, with one 51 mm (2 in) reflective target mounted at a distance of 6 m (20 ft) from the sensor, only one degree of angular misalignment will cause the center of the laser beam to miss the center of the target by 102 mm (4 in), and miss the target altogether by almost 76 mm (3 in).Alignment tip: When using a small retroreflective target at medium or long range, it is often useful to temporarily attach (or suspend) a strip of retroreflective tape (such as BRT-THG-2-100) along a line that intersects the real target. The visible red laser beam is easily seen in normal room lighting; sight along the beam toward the target, from behind the sensor. Move the sensor to scan the laser beam back and forth across the tape strip, to guide the beam onto the target.The use of mounting bracket SMB-46A may simplify alignment, because of its precision-positioning feature. After mounting the bracket and the sensor, tighten the screws in the two corners of the bracket to position the beam in the exact spot needed.Figure 1. Beam displacement per degree of misalignmentP/N 115700 Rev. B - Tel: +1-763-544-31643Retroreflective Sensor Beam SizeUnlike conventional retroreflective sensors, theretroreflective laser has the ability to sense relatively small profiles. The figures demonstrate the diameter of thesmallest opaque rod that reliably breaks the laser beam at several sensor-to-object distances. These values assume an excess gain of about 10×. Flooding effects are possible when the gain is much higher (reduce sensor gain in this situation in order to reliably detect minimum object sizes).Note the shape of the beam is elliptical and its size increases as the distance from the sensor increases.Minimum object detection sizes are dependent on both the object’s distance from the sensor, and the direction (with respect to the beam’s X and Y axes) in which the object crosses the beam.Figure 2. Beam divergence at 25ºC (beam size vs. distance)Beam divergenceapproximately 1 milliradianFigure 3. Minimum object detection size vs. distanceInstallation Notes - Class 2 Laser Safety NotesLow-power lasers are, by definition, incapable of causing eye injury within the duration of a blink (aversion response) of 0.25 seconds. They also must emit only visiblewavelengths (400 to 700 nm). Therefore, an ocular hazard may exist only if individuals overcome their natural aversion to bright light and stare directly into the laser beam.•Do not stare at the laser.•Do not point the laser at a person’s eye.•Mount open laser beam paths either above or below eye level, where practical.•Terminate the beam emitted by the laser product at the end of its useful path.CAUTION: Use of controls adjustments or performance of procedures other than those specified herein may result in hazardous radiation exposure; per EN 60825. Do not attempt to disassemble this sensor for repair. A defective unit must be returned to the manufacturer. - Tel: +1-763-544-3164P/N 115700 Rev. BSpecificationsSensing BeamVisible red Class 2 laser, 650 nmSupply Voltage10 to 30 V dc (10% max. ripple) at less than 20 mA, exclusive of load Beam Size at Aperture (Retroreflective Models)3.75 mm × 1.85 mm (0.15 in × 0.07 in)Beam Divergence (Retroreflective Models)Approximately 1 milliradianLaser ClassificationClass 2 safety (CDRH (FDA) 1040.10 and IEC 60875-1)Supply Protection CircuitryProtected against reverse polarity, over voltage, and transient voltages Delay at Power Up< 1 secondOutput ConfigurationSPDT (complementary) solid-state switch; choose NPN (current sinking) or PNP (current sourcing) modelsLight operate: Normally-open output conducts when the sensor sees its own modulated lightDark operate: Normally-closed output conducts when the sensor sees dark Output Rating150 mA maximum (each output)OFF-state leakage current: < 1 microamp at 30 V dcON-state saturation voltage: < 0.3 V at 10 mA dc; < 0.8 V at 150 mA dc Output ProtectionProtected against continuous overload or short-circuit of outputs;Overload trip point ≥ 220 mA Output Response Time0.2 ms (200 µs) ON and OFF Repeatability50 µsAdjustments12-turn slotted brass Gain (sensitivity) adjustment potentiometer (clutched at both ends of travel)Extinguishing WireGray wire held “low” for laser operation; “high” to turn laser OFF; Low ≤ 1.0 V dc; High ≥ V supply –4.0 V dc (< 30 V dc) or disconnect wire;100 ms delay upon enable IndicatorsTwo LEDs: green and amberGreen solid: power to sensor is ONAmber solid: light is sensed; normally open output is conducting Green flashing: output overloaded Amber flashing: marginal excess gainConstructionHousings are heat-resistant ABS/polycarbonate alloy, UL94-VO rated;acrylic lens cover Environmental RatingNEMA 3; IEC IP54Connections2 m (6.5 ft) or 9 m (30 ft) attached cable, or 5-pin Euro-style 150 mm (6 in) pigtail quick-disconnect fitting; mating cables for QD models are ordered separately Operating ConditionsTemperature: –10 °C to +45 °C (14 °F to 113 °F)Maximum relative humidity: 90% at 50 °C (non-condensing)WeightSensor only: 22 g (0.8 oz)Sensor plus 2 m cable: 62 g (2.2 oz)Application NotesFalse pulse may occur < 1 second after power-up Certifications (all models except PD4*V..C300 Series)Dimensions[0.17"][0.17"]R2.5 mm [0.10"]12.7 mm9.1 mm [0.36"]M3 (#4) Screw Clearance (2 Places) 6.2 mm [0.25"] dia. 1.8 mm [0.07"] deepSensitivity AdjustmentPower Indicator Signal IndicatorP/N 115700 Rev. B - Tel: +1-763-544-31645Wiring Diagrams150 mA Maximum each+ Off - On –+((–+150 mA Maximum each+ Off - On((1 = Brown2 = Black3 = Blue4 = White5 = GrayQuick disconnect wiring is functionally the same.Accessories - Tel: +1-763-544-3164P/N 115700 Rev. BP/N 115700 Rev. B - Tel: +1-763-544-31647Banner Engineering Corp. Limited WarrantyBanner Engineering Corp. warrants its products to be free from defects in material and workmanship for one year following the date of shipment. Banner Engineering Corp. will repair or replace, free of charge, any product of its manufacture which, at the time it is returned to the factory, is found to have been defective during the warranty period. This warranty does not cover damage or liability for misuse, abuse, or the improper application or installation of the Banner product.THIS LIMITED WARRANTY IS EXCLUSIVE AND IN LIEU OF ALL OTHER WARRANTIES WHETHER EXPRESS OR IMPLIED (INCLUDING, WITHOUT LIMITATION, ANY WARRANTY OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE), AND WHETHER ARISING UNDER COURSE OF PERFORMANCE, COURSE OF DEALING OR TRADE USAGE.This Warranty is exclusive and limited to repair or, at the discretion of Banner Engineering Corp., replacement. IN NO EVENT SHALL BANNER ENGINEERING CORP. BE LIABLE TO BUYER OR ANY OTHER PERSON OR ENTITY FOR ANY EXTRA COSTS, EXPENSES, LOSSES, LOSS OF PROFITS, OR ANY INCIDENTAL, CONSEQUENTIAL OR SPECIAL DAMAGES RESULTING FROM ANY PRODUCT DEFECT OR FROM THE USE OR INABILITY TO USE THE PRODUCT, WHETHER ARISING IN CONTRACT OR WARRANTY, STATUTE, TORT, STRICT LIABILITY, NEGLIGENCE, OR OTHERWISE.Banner Engineering Corp. reserves the right to change, modify or improve the design of the product without assuming any obligations or liabilities relating to any product previously manufactured by Banner Engineering Corp. - Tel: +1-763-544-3164。

发出光和热的英文短语

发出光和热的英文短语Luminescence: The Emission of Light and Heat.Luminescence is a fascinating phenomenon that involves the emission of light and heat due to the excitation of an atom, molecule, or ion. It occurs when electrons within the substance absorb energy, causing them to transition to higher energy levels. As the electrons return to their ground state, they release the absorbed energy in the form of photons, resulting in the emission of light. Since this process also involves the dissipation of energy as heat, luminescent materials often exhibit both light and heat emission.There are various categories of luminescence, each with its unique characteristics and mechanisms:Fluorescence: Fluorescence is a type of luminescence that occurs when the absorbed energy is promptly re-emitted as light. This process typically takes place withinnanoseconds to microseconds after the initial excitation. Fluorescence is commonly used in various applications, including fluorescent lighting, biological imaging, and chemical sensing.Phosphorescence: Phosphorescence is similar to fluorescence; however, the re-emission of light occurs over a much longer duration, ranging from milliseconds to hoursor even days after the excitation ceases. This sustained emission is attributed to metastable excited states that have a longer lifetime before returning to the ground state. Phosphorescent materials find applications in glow-in-the-dark paints, emergency lighting, and timekeeping devices.Chemiluminescence: Chemiluminescence arises due to chemical reactions that produce excited species, which subsequently emit light upon returning to their ground state. This type of luminescence is commonly observed in biological systems, such as the light emission by fireflies and the glow of certain deep-sea creatures.Triboluminescence: Triboluminescence is an intriguingphenomenon that occurs when certain materials emit light under mechanical stress, such as rubbing, scratching, or crushing. The precise mechanism behind triboluminescence is not fully understood but is believed to involve the generation of electrical charges within the material.Electroluminescence: Electroluminescence occurs when a material emits light under the influence of an electric field. This type of luminescence is commonly found inlight-emitting diodes (LEDs) and organic light-emitting diodes (OLEDs), which have revolutionized the field ofsolid-state lighting and display technologies.Applications of Luminescence:The diverse properties of luminescent materials have led to a wide range of applications across variousscientific and technological fields:Lighting: Luminescence plays a crucial role in the development of advanced lighting systems. LEDs and OLEDs, based on electroluminescence, provide energy-efficient andlong-lasting illumination solutions.Displays: Luminescent materials are essential components in display technologies, such as televisions, computer monitors, and smartphones. Phosphorescent materials enhance the color gamut and brightness of LCD displays, while OLEDs enable the production of flexible and high-resolution displays.Biomedical Imaging: Fluorescence microscopy and bioluminescence imaging techniques utilize the luminescence properties of specific molecules or tags to visualize and study biological processes at the cellular and molecular level.Lasers: Laser devices rely on the stimulated emission of radiation, which involves the amplification of light within a luminescent medium. Lasers have numerous applications in telecommunications, material processing, and medical procedures.Chemical Sensing: Chemiluminescence-based sensorsdetect and quantify specific chemical compounds by measuring the intensity or wavelength of the emitted light. These sensors are widely used in environmental monitoring, medical diagnostics, and industrial process control.Conclusion:Luminescence, with its wide range of phenomena and applications, is a captivating field of study that encompasses the interplay between light and matter. From the enchanting glow of fireflies to the cutting-edge technologies of LEDs and OLEDs, luminescence continues to inspire scientific research and drive technological advancements.。