RX Noise Figure
T7026中文资料
Features•Single 3-V Supply Voltage•High-power-added Efficient Power Amplifier (P out Typically 28dBm)•Ramp-controlled Output Power•Low-noise Preamplifier (NF Typically 2.1dB)•Biasing for External PIN Diode T/R Switch •Current-saving Standby Mode •Few External Components •Package: QFN20DescriptionThe T7026 is a monolithic SiGe transmit/receive front-end IC with power amplifier,low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT, IEEE 802.11 FHSS WLAN, home RF and ISM proprietary radios. Due to the ramp-control feature and a very low quiescent current, an external switch transistor for V S is not required.Electrostatic sensitive device.Observe precautions for handling.Figure 1. Block Diagram2T70264563C–ISM–01/04Pin ConfigurationFigure 2.Pinning QFN20Pin DescriptionPin Symbol Function 1RX_ON RX active high2R_SWITCH Resistor to GND sets the PIN diode current3SWITCH_OUT_RX Switched current output for PIN diode (active in RX mode)4SWITCH_OUT_TXSwitched current output for PIN diode (active in TX mode)5GND_LNA1Ground6LNA_IN Low-noise amplifier input 7GND_LNA2Ground8V3_P A_OUT Inductor to power supply and matching network for power amplifier output 9V3_P A_OUT Inductor to power supply and matching network for power amplifier output 10V3_P A_OUT Inductor to power supply and matching network for power amplifier output 11V2_P A Inductor to power supply for power amplifier 12V2_P A Inductor to power supply for power amplifier 13GND Ground14V1_P A Supply voltage for power amplifier 15NC Not connected16RAMP Power ramping control input 17P A_IN Power amplifier input18VS_LNA Supply voltage input for low-noise amplifier 19LNA_OUTLow-noise amplifier output 20PU Power-up active high SlugGNDGround3T70264563C–ISM–01/04Absolute Maximum RatingsStresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.All voltages are referred to ground (pins GND and slug)ParametersSymbol Value Unit Supply voltagePins VS_LNA, V1_P A, V2_P A and V3_P A_OUT, no RF V S 5V Junction temperature T j 150°C Storage temperature T stg -40 to +125°C RF input power LNA P inLNA -5 dBm dBm RF input power P AP inPA10 dBmdBmThermal ResistanceParametersSymbol Value Unit Junction ambient QFN20, slug soldered on PCBR thJA27K/WOperating RangeAll voltages are referred to ground (pins GND and slug). Power supply points are VS_LNA, V1_P A, V2_P A, V3_P A_OUT. The following table represents the sum of all supply currents depending on the TX/RX mode.ParametersSymbol Min.Typ.Max.Unit Supply voltagePins V1_P A, V2_P A and V3_P A_OUT V S 2.7 3.6 4.6V Supply voltage Pin VS_LNA V S 2.73.0 5.5V Supply currentTX RXI S I S 4708mA mA Standby current PU = 0I S 10µAAmbient temperatureT amb-25+25+70°C4T70264563C–ISM–01/04Electrical CharacteristicsTest conditions (unless otherwise specified): V S = 3.6 V , T amb = 25°CParameters Test Conditions Symbol Min.Typ.Max.UnitPower Amplifier (1)Supply voltage Pins V1_P A, V2_P A and V3_P A_OUT V S 2.7 3.6 4.6V Supply current TXI S_TX 470mARX (P A off), V RAMP £ 0.1 V I S_RX 10µA Standby current Standby for V RAMP £ 0.1V I S_standby10µA Frequency range TX f 2.4 2.5GHz Gain-control range TXD Gp 6042dB Power gain maximum TXPin P A_IN to V3_P A_OUT Gp 283433dB Power gain minimum Gp -40-17dB Ramping voltage maximum TX, power gain (max), pin RAMP V RAMP max 1.61.65 1.7V Ramping voltage minimum TX, power gain (min), pin RAMP V RAMP min 1V Ramping current maximum TX, V RAMP = 1.75 V , pin RAMP I RAMP max 0.1mA Power-added efficiency TXP AE 3337%Saturated output power TX, input power = 0 dBm referred to pins V3_P A_OUT P sat 272829dBmInput matching (2)TX pin P A_IN Load VSWR < 1.5:1Output matching (2)TX pins V3_P A_OUT Load VSWR < 1.5:1Harmonics at P 1dBCP TX pins V3_P A_OUT 2 fo -30dBc Harmonics at P 1dBCPTX pins V3_P A_OUT 3 fo -30dBc T/R-switch Driver (Current Programming by External Resistor from R_SWITCH to GND)Switch-out current outputStandby, pin SWITCH_OUT I S_O_standby 1µA RXI S_O_RX 1µA TX at 100 W I S_O_100 1.7mA TX at 1.2 k W I S_O_1k27mA TX at 33 k W I S_O_33k 17mA TX at R switch openI S_O_R19mA I_Switch_Out_RX maximum7mA Low-noise Amplifier (3)Supply voltage All, pin VS_LNA V S 2.73.05V Supply current RXI S 810mA Supply current(LNA and control logic)TX (control logic active)pin VS_LNAI S 0.5mA Standby current Standby, pin VS_LNA I S_standby110µA Frequency range RXf2.42.5GHzNotes:1.Power amplifier shall be unconditionally stable, maximum duty cycle 100%, true cw operation, maximum load mismatchand duration: VSWR = 8:1 (all phases) 10 s, ZG = 50 W , V S = 3.6 V . 2.With external matching network, load impedance 50 W .3.Low-noise amplifier shall be unconditionally stable.4.With external matching components.5T70264563C–ISM–01/04Power gain RX, pin LNA_IN to LNA_OUT Gp 151619dB Noise figure RXNF 2.1 2.3dB Gain compressionRX, referred to pin LNA_OUT O1dB -9-7-6dBm Third-order input interception point RXIIP3-16-14-13dBmInput matching (4)RX, pin LNA_IN VSWRin < 2:1Output matching (4)RX, pin LNA_OUT VSWRout< 2:1Logic Input Levels (RX_ON, PU)High input level = ‘1’, pins RX_ON and PU V iH 2.4V S, LNA V Low input level = ‘0’V iL 00.5V High input current = ‘1’, V iH = 2.4V I iH 4060µA Low input current = ‘0’I iL0.2µAElectrical Characteristics (Continued)Test conditions (unless otherwise specified): V S = 3.6 V , T amb = 25°CParameters Test ConditionsSymbol Min.Typ.Max.Unit Notes:1.Power amplifier shall be unconditionally stable, maximum duty cycle 100%, true cw operation, maximum load mismatchand duration: VSWR = 8:1 (all phases) 10 s, ZG = 50 W , V S = 3.6 V . 2.With external matching network, load impedance 50 W .3.Low-noise amplifier shall be unconditionally stable.4.With external matching components.Control Logic for LNA and T/R-switch DriverOperation Mode PU RX_ON Standby 00TX 10RX116T70264563C–ISM–01/04Input/Output CircuitsFigure 3. Internal Circuitry; PA_IN, V1_PAFigure 4. Internal Circuitry; RAMP, V1_PAFigure 5. Internal Circuitry V2_PAPA_INV1_PAGNDV1_PARAMPV2_PAGND7T70264563C–ISM–01/04Figure 6. Internal Circuitry V3_PA_OUTFigure 7. Internal Circuitry SWITCH_OUT_RX, SWITCH_OUT_TX, R_SWITCH,V1_PAFigure 8. Internal Circuitry LNA_IN, VS_LNAV3_PA_OUTGNDV1_PAGNDSWITCH_OUT_RX/SWITCH_OUT_TXR_SWITCHVS_LNAGNDLNA_IN8T70264563C–ISM–01/04Figure 9. Internal Circuitry PU, RX_ON, VS_LNAFigure 10. Internal Circuitry LNA_OUT, VS_LNAVS_LNARX_ON/ PUVS_LNAGNDLNA_OUT9T70264563C–ISM–01/04Package InformationOrdering InformationExtended Type Number Package Remarks T7026-PGS QFN20TubeT7026-PGQ QFN20Taped and reeled T7026-PGPQFN20Taped and reeledDisclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life support devices or systems.Atmel CorporationAtmel Operations2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311Fax: 1(408) 487-2600Regional HeadquartersEuropeAtmel SarlRoute des Arsenaux 41Case Postale 80CH-1705 Fribourg SwitzerlandTel: (41) 26-426-5555Fax: (41) 26-426-5500AsiaRoom 1219Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong KongTel: (852) 2721-9778Fax: (852) 2722-1369Japan9F, Tonetsu Shinkawa Bldg.1-24-8 ShinkawaChuo-ku, Tokyo 104-0033JapanTel: (81) 3-3523-3551Fax: (81) 3-3523-7581Memory2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311Fax: 1(408) 436-4314Microcontrollers2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311Fax: 1(408) 436-4314La Chantrerie BP 7060244306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18Fax: (33) 2-40-18-19-60ASIC/ASSP/Smart CardsZone Industrielle13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00Fax: (33) 4-42-53-60-011150 East Cheyenne Mtn. Blvd.Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300Fax: 1(719) 540-1759Scottish Enterprise Technology Park Maxwell BuildingEast Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000Fax: (44) 1355-242-743RF/AutomotiveTheresienstrasse 2Postfach 353574025 Heilbronn, Germany Tel: (49) 71-31-67-0Fax: (49) 71-31-67-23401150 East Cheyenne Mtn. Blvd.Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300Fax: 1(719) 540-1759Biometrics/Imaging/Hi-Rel MPU/High Speed Converters/RF DatacomAvenue de Rochepleine BP 12338521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00Fax: (33) 4-76-58-34-80Literature Requests/literature4563C–ISM–01/04© Atmel Corporation 2004. All rights reserved.Atmel ® and combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries.Other terms and product names may be the trademarks of others.元器件交易网This datasheet has been download from:Datasheets for electronics components.。
CS3012-ISZR,CS3011-ISZ,CS3011-ISZR,CDB30XX, 规格书,Datasheet 资料
2
DS597F6
芯天下--/
CS3011 CS3012
1. CHARACTERISTICS AND SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
V+ = +5 V, V- = 0V, VCM = 2.5 V (Note 1) CS3011/CS3012 Parameter Input Offset Voltage Average Input Offset Drift Long Term Input Offset Voltage Stability Input Bias Current Input Offset Current Input Noise Voltage Density RS = 100 Ω, f0 = 1 Hz RS = 100 Ω, f0 = 1 kHz Input Noise Voltage Input Noise Current 0.1 to 10 Hz 0.1 to 10 Hz • (Note 4) (Note 5) • • • • Input Noise Current Density f0 = 1 Hz Input Common Mode Voltage Range Common Mode Rejection Ratio (dc) Power Supply Rejection Ratio Large Signal Voltage Gain RL = 2 kΩ to V+/2 Output Voltage Swing RL = 2 kΩ to V+/2 RL = 100 kΩ to V+/2 Slew Rate Overload Recovery Time Supply Current PWDN active (CS3011 Only) PWDN Threshold Start-up Time CS3011 CS3012 (Note 6) (Note 6) (Note 7) • • • • • RL = 2 k, 100 pF TA = 25º C TA = 25º C • • -0.1 115 120 200 +4.7 (Note 2) (Note 2) • • Min Typ ±0.01 (Note 3) ±50 ±100 12 12 250 100 1.9 120 136 300 +4.99 2 600 0.9 1.7 (V+)-1.25 1.4 2.4 15 12 ±1000 ±2000 pA pA
外加LNA 对零中频接收机性能之影响
Introduction在手机射频中，最常额外添加LNA的RF应用，应该莫过于讯号极为微弱的GPS，如下图[18] :然而随着手机射频越来越复杂，其他RF应用，也开始出现额外添加LNA的需求，如下图[9]。
故本文件将探讨外加LNA，对于接收机性能的影响。
Noise Figure所谓灵敏度，指的是在SNR能接受的情况下，其接收机能接收到的最小讯号[17]，其公式如下:然而对于手机射频工程师而言，能着手改善灵敏度的，只有Noise Figure一项。
Noise Figure的定义如下[17] :理想上SNR当然是越大越好，最好是无限大(表示都没有噪声)，但实际上不可能没有噪声，因此所谓Noise Figure，衡量的是当一个讯号进入一个系统时，其输出讯号的SNR下降多寡，亦即其噪声对系统的危害程度，示意图如下[17] :假设信号经过一组件，其SNR下降1 dB，那么我们可以说，该组件的Noise Figure 为1 dB。
而由下图可知，Noise Figure最小为零，亦即输出信号的SNR完全不变。
同时也由下图可知，信号经过任何组件，不管是有源还是无源，其SNR都只会变小，再怎样都不会变大，所以Noise Factor最小是1[14]。
因此，若信号经过越多组件，则SNR会下降越多[3]。
而不论是有源还是无源组件，其Noise Figure主要是来自其Insertion Loss。
当然，放大器在启动状态下，只有Gain，没有Insertion Loss，但即便如此，信号经过放大器，其SNR依旧只会下降，毕竟如前述所言，信号经过一组件，其SNR再怎样都不可能放大，因为Noise Figure最小为零，没有负的。
由上图可知，当信号经过一个LNA时，理论上SNR不变，因为信号与噪声会一起放大，且放大倍数一致。
但由于LNA会有自身的Additive Noise[3]，提升了信号的Noise Floor，故输出信号的SNR会下降。
罗泽尔沙声监测仪（Roxar Sand Acoustic Monitor）产品数据表（RXPS-00
Product Data SheetRXPS-002251, Rev AFebruary 2019 Roxar Sand Acoustic MonitorNon-intrusive Sand MonitoringThe Roxar Sand Acoustic Monitor (SAM) is a non-intrusive sand monitoring system that identifies in real-time sand production in water, oil, gas or multiphase flow lines for onshore and offshore locations. It offers a cost effective tool for operators to optimize production by enabling the determination of maximum sand-free rates or maximum acceptable sand production rates.Roxar Sand Acoustic Monitor February 2019 Roxar Sand Acoustic MonitorDecreasing production costs are becoming more and more important as reservoirs are maturing. As a result, sand production needs to be closely measured and monitored in order to avoid serious damages. One consequence of increased sand production can be serious damage to production equipment, such as valves, chokes and pipe bends. If not controlled, high sand production can have a damaging impact on the integrity of the production system. Roxar SAM is valuable for ensuring production system integrity.The benefits of using Roxar SAM include:■Allows monitoring and prediction of erosion in process equipment in order to ensure safe production and reduced down time.■Enables optimized production through the determination of Maximum Sand Free Rate (MSFR) or Acceptable Sand Rates (ASR).■Allows for improved production processes in order to prevent pipelines or separators filling with sand.■Enables monitoring of sand screen integrity.The Roxar SAM is an acoustic type device and includes the following benefits:■Real time measurement of sand production in any water, oil, gas, or multiple flow line for onshore and offshore locations.■Quantification of sand accumulating in the system by calculating grams per second passing through the pipeline. This supports Acceptable Sand Rate (ASR), with on-site sand calibration measured against actual conditions in grams per second.■Ability to detect sand noise without calibration.■No mechanical moving parts, resulting in low maintenance.■Compact and low weight device.■Non-intrusive design benefits include:—No wetted parts—No pipe pressure drop—Easy to install—No shutdown required for installation—Easy to retrofit for existing installationsBuilding Blocks behind the Roxar SAMThe Roxar SAM design consists of several parts:■ A monitor consisting of a transducer and housing damped on to the pipe.■The basic safe area electronics consisting of a Calculation & Interface Unit (CIU) and a safety barrier.A.Flowline Monitor B.Safety Barrier C.Hazard D.Safe E.Power Supply (PSU) (optional)F.Calculation & Interface Unit (CIU)G.Service Bus RS232H.PC with service software (optional)I.Modbus RTU/RS485J.Volt Free Contact K.Hazardous Area L.Safe AreaFebruary 2019Roxar Sand Acoustic MonitorRoxar SAM working principleRoxar SAM is a non-intrusive device that utilizes the acoustic noise generated by the sand particles to derive a sand production measurement. It utilizes the fact that the sand, while transported with the flow, impacts the pipe wall due to inertia in pipe bends and creates noise. This noise is then processed and used to identify and calculate real-time sand production in any water, oil, gas or multiple pipeline flows.Figure 1: Pipe Bend and Process Flow with Digital Output (Mean Value/One Second)A.Sand-Generated Noise (Impact Center Point)B.Spring-Loaded Microphone C.Impacting Particles D.FlowThe sensor picks up noise that propagates in the pipe wall and converts it to a digital signal that is transmitted on the sensor signal and built-in algorithms. Detector readings are stored for up to 90 days in an internal flash drive based on 10 second average intervals.Roxar Sand Acoustic Monitor February 2019Figure 2: Piping installation GuidelinesA.Noise Amplitude %B.FrequencyC.Flow-generated NoiseD.Sand-generated NoiseE.Microphone FilterFebruary 2019Roxar Sand Acoustic MonitorRoxar Sand Acoustic Monitor February 2019 Technical specificationsInstallation requirementsThe detector unit is non-intrusive and can be installed in production pipe work of any diameter between 2” and 48”. To facilitate inspection, the Ex classification marking must be visible after installation.The figures below shows the assembly and envelope for the different versions available, Standard Temperature (ST) and High Temperature (HT) of a Roxar acoustic sensor. Dependent on specific models of acoustic sensors (PDS or SAM), some special installation requirements may apply. General Arrangement (GA) drawings for the different models and versions can be provided upon request. Contact your Emerson sales representatives for inquiries.Piping, ST, and HT installation guidelinesThe piping arrangement upstream of the of the detector/monitor depends on the model; see the detailed description for specific requirements.Figure 3: Piping installation GuidelinesA.Piping B.Cable (one twisted pair)C.Cable gland D.Mounting strap (AISI 316)February 2019Roxar Sand Acoustic MonitorFigure 4: ST Installation Guidelines A.Detector housing (AISI 316)B.Mounting socketC.Fastening arrangement (AISI 316)Figure 5: HT Installation GuidelinesA.Fastening arrangement (AISI 316)B.Mounting socketC.HT Detector housing (AISI 316)Roxar Sand Acoustic Monitor February 2019In order to achieve best sensitivity, the Roxar SAM should be installed downstream from and as close as possible to a 90° bend and not farther away than 75 cm. This is because of the need for the pipe geometry particle inertia work to increase the concentration and force of the particle impact, and thereby the sand response, allowing for high quality measurements. Care should be taken to avoid installation near known sources of unwanted noise, for example, choke valves or cyclonic de-sanding equipment. Excessive levels of unwanted noise may compromise the measurement principle.Figure 6: SAM Installation Near 90° BendInstallation considerationsFigure 7: Installation Use GuidelinesA.Green – Safe useB.Yellow – Safe use, but not recommended (risk for non-safety-critical sensor damage)C.Red – Unsafe use (outside certified temperature envelope)D.Ambient temperature: The temperature of air or other media in a designated area surround the equipment.E.Surface temperature of the pipe on which the equipment is mounted.February 2019Roxar Sand Acoustic MonitorStandard Temperature (ST) versionFor the ST version, the only installation requirement is that there is a space between the detector housing and the pipe installation to allow the heat to dissipate from the detector and the pipe. This space ensures the detector's temperature is kept as low as possible.Figure 8: ST version chartA.Green – Safe UseB.Yellow – Safe Use, But Not RecommendedC.Red – Unsafe UseRoxar Sand Acoustic Monitor February 2019High Temperature (HT) versionThe HT version must always be mounted horizontally on the pipe.The HT version also contains:■An extended waveguide 'noise' at the front end to retract the sensor electronics away from the hot pipe surface ■Vent holes in the detector housing to provide more efficient heat evacuationFigure 9: HT version chartA.Green – Safe UseB.Yellow – Safe Use, But Not RecommendedC.Red – Unsafe UseModel code numbering systemMode code structure for the Roxar Sand monitor - acousticA complete model code includes the ordering options.February 2019Roxar Sand Acoustic MonitorRoxar Sand Acoustic Monitor February 2019Product descriptionFunctional propertiesTable 1: Roxar SAM model code functional propertiesPipe sizeTable 2: Roxar SAM model code pipe sizeFebruary 2019Roxar Sand Acoustic MonitorMain material (sensor housing)Table 3: Roxar SAM model code sensor housingDetector approvalsRoxar SAM model code detector approvalsAll detector approvals are certified for Intrinsically Safe installations.Table 4: Roxar SAM model code pipe sizeField cable glandAll field cable glands have the following certification: Hawke 501/453/Universal Ex de.Table 5: Roxar SAM model code field cable gland(1)Not available with Factory option Z.Field cable size rangeCode 0 is only available with Field Cable Gland option G0 (no gland).Codes 1 through 4 are not available with Field Cable Gland option G0 (no gland).Roxar Sand Acoustic Monitor February 2019 Table 6: Roxar SAM model code field cable glandCommunication interfaceTable 7: Roxar SAM model code communication interface(1)Not available with Factory Option Z.Supply voltageTable 8: Roxar SAM model code supply voltage(1)Not available with Enclosure for Electronics in Hazardous Area option Z0, No Enclosure.BarrierRoxar SAM model code barrierField reset boxTable 9: Roxar SAM model code field reset boxFor future useTable 10: Roxar SAM model code future use Tag platesTable 11: Roxar SAM model code tag plates(1)Not available with factory option Z.Product specific optionsTable 12: Roxar SAM model code product specific options(1)Not available with factory Option Z.Factory optionsTable 13: Roxar SAM model code factory options February 2019Roxar Sand Acoustic MonitorRXPS-002251Rev. AFebruary 2019 RoxarHead Office Roxar products:+47 51 81 8800**********************CIS: +7 495 504 3405Europe: +47 51 81 8800North America: +1 281 879 2300Middle East: +971 4811 8100Asia Pacific: +60 3 5624 2888Australia: 1 300 55 3051Latin America:Portuguese: +55 15 3413 8888Spanish: + 52 55 5809 5000/Roxar©2019 Roxar AS. All rights reserved.The Emerson logo is a trademark and service mark of Emerson Electric Co. Roxar is a trademark ofRoxar ASA. All other marks are property of their respective owners.Roxar supplies this publication for informational purposes only. While every effort has been made toensure accuracy, this publication is not intended to make performance claims or processrecommendations. Roxar does not warrant, guarantee, or assume any legal liability for the accuracy,completeness, timeliness, reliability, or usefulness of any information, product, or process describedherein. All sales are governed by our terms and conditions, which are available on request. Wereserve the right to modify or improve the designs or specifications of our products at any timewithout notice. For actual product information and recommendations, please contact your localRoxar representative.Roxar products are protected by patents. See /en-us/automation/brands/roxar-home/roxar-patents for details.。
moto 链路预算
Uplink
Downlink coverage is smaller than Uplink coverage So you CAN NOT cell coverage .
USE MHA
to enhance
Cell coverage
-5-
Sardine Project
Uplink needs enlarged
TDF HCU DCF 4db DDF
7db Cable loss
-1db -3db (-1db)+(-3db)=(-1db)+(-3db)+(-3db)=-2db/30m (7/8 inch)
BTS max TX Power (Horizon DCS1800) 50w 47dbm BTS sensitivity 108.5dbm MS max TX Power (class 5) 1w 30dbm MS sensitivity -100dbm
Sardine Project
Link Budget
Cooperation
CMCC BeiJing Account SOS Team Prepared By: Yan Yi Chuan
Sardine Project
LINK BUDGET 含义 LINK BUDGET 计算 GSM1800 LINK BUDGET 计算 GSM900 LINK BUDGET 计算
- 16 -
Fading margin Body loss
-6db -3db
Sardine Project
Config A --- 0 Stage
Linkbudget For Motorola HorizonMacro
Frequency: 1710MHz - 1880MHz With mast head amplifier
Noise Figure Measurement Using Mixed-Signal BIST
Noise Figure Measurement Using Mixed-Signal BISTJie Qin, Charles Stroud, and Foster DaiDept. of Electrical and Computer Engineering, 200 Broun HallAuburn University, Alabama 36849-5201, USAAbstract—A Built-In Self-Test (BIST) approach for functionality measurements, including noise figure (NF), linearity and frequency response of analog circuitry in mixed-signal systems, is presented. The BIST circuitry consists of a direct digital synthesizer (DDS) based test pattern generator (TPG) and a multiplier/accumulator based output response analyzer (ORA). The BIST approach has been implemented in hardware and used for actual NF measurements for comparison with measurements from external test equipment.I.I NTRODUCTIONMixed-signal Built-In Self-Test (BIST) is now in more demand than ever. Analog functionality tests based on the traditional methodology of manual testing costs much more money and time due to the ever-increasing operational frequency and complexity of modern mixed-signal integrated circuits (ICs). For example, RFIC test cost can be as high as 50% of the total cost, depending on the complexity of the functionality to be tested [1]. The operational frequency and complexity of modern mixed-signal ICs make it difficult to perform tests on these ICs. With a rapidly increasing level of integration, the number of input/output (IO) pins does not increase accordingly such that observability of internal components is lower compared with traditional ICs [2]. Therefore, it becomes more attractive to automate the analog testing process with low-cost, built-in test circuitry.In order to perform a suite of analog functionality tests in a BIST environment, such as linearity, frequency response, and noise figure (NF) measurements, the frequency spectrum of the signal coming from the device under test (DUT) needs to be measured and analyzed by an output response analyzer (ORA) included in the BIST circuitry [3]. A few techniques have been proposed to perform on-chip frequency-domain testing of mixed-signal circuits in [4]–[7]. However, most of these approaches focus only on one or two simple parameter tests such as cut-off frequency of a filter and cannot perform complete analog tests such as frequency response, linearity, noise measurements [1].A new mixed-signal BIST approach has been proposed based on direct digital synthesizer (DDS) based test pattern generator (TPG) and multiplier/accumulator (MAC) based ORA. Because the signal is in digital form, it is easy to include different modulation capabilities in the DDS. Therefore, many analog functional tests, such as magnitude and phase response in the frequency domain, 3rd order intercept point (IP3) and noise figure (NF) can be performed in such an architecture [1]. Some experimental results for IP3 and frequency response (both phase and gain) using this BIST architecture have been presented in [1] to demonstrate the feasibility and accuracy of the BIST approach.In this paper, we show how the proposed BIST approach can be extended from the current suite of functional measurements to include NF measurements of the analog circuitry in a mixed-signal IC or system. The paper is organized as follows. An overview of the BIST approach is given in Section II. Next, the theoretical background of NF measurement and how the measurement is conducted in our BIST architecture are presented in Section III. Some experimental results of actual hardware NF measurements are given in Section IV. Finally, we summarize the paper in Section V with some concluding remarks.II.O VERVIEW OF BIST A PPROACHThe mixed-signal BIST architecture, illustrated in Figure 1, includes a DDS-based TPG, a MAC-based ORA, and a test controller [1]. The test scheme utilizes the existing digital-to-analog converters (DACs) and analog-to-digital converters (ADCs) typically associated with most mixed-signal architectures to minimize the hardware added for BIST. The only test circuitry added to the analog domain is loopback capabilities needed to facilitate return paths for test signals to the ORA. The number and location of loopback capabilities determines the accuracy and resolution of tests and measurements associated with a given analog function.The DDS-based TPG consists of three numerically controlled oscillators (NCOs) and utilizes an existing DAC from the mixed-signal system to complete the DDS. Figure 2 shows a more detailed view of an NCO used in the TPG. The phase accumulator is used to generate the phase word based on the frequency word f and initial phase word θ. A look-up table is utilized to convert the truncated phase word sequence to a digital sine wave sequence. The output sine wave frequency is determined as'2clknf ff⋅=, (1) where nis the word width of the phase accumulator.Figure 1. General model of BIST architectureFigure 2. NCO used in TPG The ORA consists of an N ×N -bit multiplier and an M -bit accumulator. In the design of the ORA, N is the number of bits from the DDS and ADC and M is chosen such that K <2M , where K is the length of the BIST sequence in clock cycles. While performing frequency response, linearity and NF measurements, f 1(nT clk ) and f 2(nT clk) (refer to Figure 1) are set to cos(ωnT clk ) and sin(ωnT clk ), respectively. As a result, the DC 1 and DC 2 accumulator values can be described as 1DC ()cos()clk clk nf nT nT ω=⋅∑,(2) 2DC ()sin()clk clk nf nT nT ω=⋅∑.(3) Reference [3] presents three approaches to calculate the amplitude response A(ω) and phase response ∆φ(ω) using DC 1 and DC 2 and points out that the most preferable approach for NF, linearity and frequency response measurements is based on (4) and (5) as follows 2221)(DC DC A +=ω. (4) 121()()()DC tgDC ωφωω−∆=−, (5) In order to achieve accurate results for analog functional measurements, not only must the DUT’s phase response be considered and measured as in Equation (5), but also the phase delay caused by the BIST circuitry itself (including the DAC and ADC) needs to be measured for calibration of measurements [1][3]. This is done by controlling MUX3 in Figure 1 to select the signal path without the DUT to measure and calibrate for phase delay in the BIST circuitry. III. N OISE F IGURE M EASUREMENTNoise figure (NF) measurement is an important analogfunctionality test along with the IP3 and frequency responsemeasurements. Noise introduced by analog circuitry includes thermal noise, shot noise, flicker noise, etc. [8]. The noisefrom these sources will be mixed together with the signal ofinterest. The more noise that is introduced by circuit components, the more difficult it is to extract the signal ofinterest. Therefore, the noise is a critical issue to anyelectrical system’s performance. If the noise introduced bycritical components, like low noise amplifiers (LNAs), can be measured in the system, it will be much easier for IC and system manufacturers to test and diagnose potential problems related to noise in mixed-signal systems. Therefore, it is important to include NF measurements in the BIST approach. There are two important parameters widely used to characterize the system noise. One is the signal-to-noise ratio (SNR), which is defined asSignal Power SNR Noise Power in Interested Bandwidth = (6) Alternatively, the noise added in a circuit can be characterized by the noise figure (NF), which is defined as in outSNR NF SNR =, (7) where SNR in and SNR out are the SNRs measured at the input and output of the circuit, respectively [8]. The noise introduced by a DUT can be mathematicallymodeled as illustrated in Figure 3 where y out (t) is the response of the DUT’s ideal model to the input signal y in (t), while y n (t)represents the noise generated by the DUT. Without loss of generality, y n (t) is usually assumed to be a white Gaussianadditive noise. The measurement of noise is computed in the frequency domain instead of the time domain mainly due to the following two factors. First, it is very hard to estimate y n (t)’s power from the time domain and, second, even if we can find a way to determine y n (t)’s power, it is still meaningless because we only care about the noise over the bandwidth of interest, which is usually much smaller thany n (t)’s real power [2][8]. Phase Accumulator)Figure 3. Noise introduced by DUTAccording to the periodogram method [9], the noise’spower spectrum density (PSD) in sampled discrete format can be expressed as221'01()()()N j nk L out clk out clk n clk S k y nT y nT e Nf π−=⎡⎤=−⎣⎦∑(8) Usually, Equation (8) can be computed through the FFT algorithm. However, there is a large area penalty and power consumption associated with an on-chip (or in-system) FFT processor [3][7]. To perform the NF measurement in our BIST approach (refer to Figure 1), NCO1 in the TPG of the BIST circuitry generates a sine wave sin (ω1t ) to stimulate the DUT. At the same time, an in-phase tone and an out-of-phase tone at frequency ω2 are produced by NCO2 and NCO3, respectively, and fed into the ORA. In this case, frequency words to NCO2 and NCO3 were be the same, f 2 = f 3, while θ2 and θ3 are used to control the in-phase and out-of-phase tones at frequency ω2. By sweeping ω2 over the frequency band of interest, the ORA can then obtain y’out (t)’s spectrum information as illustrated in Figure 4. Since the signal of interest only appears at frequency f 1, the spectrum of the noise Y n (f) can be easily obtained from the samples at all other frequencies. Then the noise’s PSD and SNR can be measured based on Equations (8) and (6), respectively. The test controller is capable of bypassing the DUT through MUX3 (see Figure 1) such that input and output SNRs of the DUT can be measured. From these two SNRs, the NF of the DUTcan be determined using Equation (7).Figure 4. SNR measurement using BISTIV. E XPERIMENTAL R ESULTSIn order to prove the effectiveness and feasibility of theproposed BIST architecture for NF measurements of analog circuitry in addition to linearity and frequency response measurements, we implemented the BIST architecture shownin Figure 1 in hardware. The digital portion of the BISTcircuitry was implemented in a Xilinx Spartan XC2S50 FieldProgrammable Gate Array (FPGA) on an XSA50 printed circuit board (PCB). A DAC (AD9752AR by AnalogDevices) with low-pass filter and an 8-bit ADC (AD9225AR by Analog Devices) were implemented on another PCB. An op-amp built on a separate board served as the DUT for the NF measurement.A. NF Measurement using External Test EquipmentIn order to verify the accuracy of the BIST-based NF measurement, a reference NF measurement was conducted using external test equipment, including an Agilent 33250A waveform generator and an Agilent 8563EC spectrumanalyzer. The DUT was driven by the waveform generator and the DUT’s input and output were analyzed by the spectrum analyzer with a resolution bandwidth (RBW) of 100Hz. The spectrum of the DUT’s input and output were captured and are shown in Figures 5 and 6, respectively. It should be noted that the maximum signal level in Figure 5coincides with the top of the plot.Figure 5. DUT input spectrum analyzer SNFR measurement of90 dBc/HzFigure 6. DUT output spectrum analyzer SNFR measurement of 76 dBc/Hz It is known from [10] that the SNR can be read from the spectrum analyzer as follows1010log (2)s f SNR SNFR RBW ⎛⎞=−⎜⎟•⎝⎠, (9)where SNFR is the signal-to-noise floor ratio displayed directly on the spectrum analyzer. The SNFR in and SNFR out at the DUT’s input and output as read from these two figures are 90 dBc/Hz and 76 dBc/Hz, respectively. The DUT’s NF can be now be calculated as follows1907614 in outNF SNFR SNFR dB=−=−=(10) B.NF Measurement using BIST circuitryThe BIST-based NF measurement was conducted and the actual input and output spectrums obtained from the BIST circuitry are shown in Figures 7 and 8, respectively. From these two figures, the SNFR in and SNFR out of the DUT are read as 60 dBc/Hz and 45 dBc/Hz, respectively, using the noise floor indicated in the figures. The DUT’s NF can be calculated in the same way as Equation (10) and the result is2604515 in outNF SNFR SNFR dB=−=−=(11)Figure 7. DUT input BIST-based SNFR measurement of 60dBc/HzFigure 8. DUT output BIST-based SNFR measurement of 45dBc/HzComparing the NF1from Equation (10) using external test equipment and NF2 from Equation (11) using the BIST circuitry, we find that there is only 1 dB difference between the two measurements. This illustrates the feasibility and accuracy of the BIST approach for NF measurements. One possible reason for the 1dB difference is the choice of noise floor for the measurement indicated in the figures. Another possible reason is switching noise produced by the FPGA that is not observed by the external test equipment.V.C ONCLUSIONSA BIST approach for analog circuit functional tests, including NF measurements as well as linearity and frequency response, in mixed-signal systems was presented. The experimental results show the feasibility and accuracy of the BIST architecture for on-chip NF measurements. The BIST architecture has been implemented in Verilog and parameterized for specification of the desired size of the DDS-based TPG and MAC-based ORA based on the sizes of the DAC and ADC targeted for the mixed-signal system. The BIST implementation is efficient in terms of area and easily fits into the smallest FPGAs on the market. As a result, it can be easily incorporated in any mixed-signal system design. This facilitates permanent residence of the BIST circuitry in system applications with access to the DAC/ADC pair for on-chip analog functional test and measurement. It should be noted that the BIST architecture shown in Figure 1 includes all of the circuitry, features, and capabilities needed for linearity and frequency response (both gain and phase) measurements as well as NF measurement. Furthermore, the NF measurement requires only a subset of the circuitry shown in Figure 1 and does not impose any additional circuitry on the existing BIST architecture.R EFERENCES[1] F. Dai, C. Stroud, and D. Yang, “Automatic Linearityand Frequency Response Tests with Built-in Pattern Generator and Analyzer,” IEEE Trans. on VLSI Systems.,vol. 14, no. 6, pp. 561-572, 2006.[2]M. Bushnell and V. Agrawal, Essentials of ElectrnonicTesting for Digital, Memory and Mixed-Signal VLSI Circuits, Springer, 2006.[3]J. Qin, C. Stroud, and F. Dai, “Phase Delay Measurementand Calibration in Built-In Analog Functional Test,” to be published in Proc. IEEE Southeastern Symp. on System Theory, March 2007.[4] C.-Y. Chao, H.-J. Lin, and L. Milor, “Optimal Testing ofVLSI Analog Circuits,” IEEE Trans. on Computer-Aided Design, vol. 16, no. 1, pp. 58-76, 1997.[5]M. Toner and G. Roberts, “A BIST Technique for aFrequency Response and Intermodulation Distortion Test of a Sigma-Delta ADC,” Proc. IEEE VLSI Test Symp.,pp. 60-65, 1994.[6] B. Provost and E. Sanchez-Sinencio, “On-chip RampGenerators for Mixed-Signal BIST and ADC Self-Test,”IEEE J. Solid-State Circuits, vol. 38, pp. 263-273, 2003. [7]J. Emmert, J. Cheatham, B. Jagannathan, and S.Umarani, “An FFT Approximation Technique Suitable for On-Chip Generation and Analysis of Sinusoidal Signals”, Proc. IEEE International Symp. on Defect and Fault Tolerance in VLSI Systems, pp. 361-367, 2003.[8] B. Razavi, RF Microelectronics, Prentice-Hall, 1997.[9] A. Oppenheim and R. Schafer, Discrete-Time SingalProcessing, Prentice-Hall, 1989.[10]W. Kester, Editor, Analog-Digital Conversion, AnalogDevices Inc, 2004.Noise floor Noise floor。
噪声系数测量的三种方法
Maxim > App Notes > BASESTATIONS / WIRELESS INFRASTRUCTURE WIRELESS, RF, AND CABLEKeywords: rf, rfic, wireless, noisefigure measurement, gain, meter, y factor, rf ics, rfics Nov 21, 2003 APPLICATION NOTE 2875Three Methods of Noise Figure MeasurementAbstract: Three different methods to measure noise figure are presented: Gain method, Y-factor method, and the Noise Figure Meter method. The three approaches are compared in a table.IntroductionIn wireless communication systems, the "Noise Figure (NF)," or the related "Noise Factor (F)," defines the noise performance and contributes to the receiver sensitivity. This application note describes this important parameter and details ways to measure it.Noise Figure and Noise FactorNoise Figure (NF) is sometimes referred to as Noise Factor (F). The relationship is simply:NF = 10 * log10 (F)DefinitionNoise Figure (Noise Factor) contains the important information about the noise performance of a RF system. The basic definition is:From this definition, many other popular equations of the Noise Figure (Noise Factor) can be derived.Below is a table of typical RF system Noise Figures:Category MAXIM Products Noise Figure*Applications Operating Frequency System GainLNA MAX26400.9dB Cellular, ISM400MHz ~ 1500MHz15.1dBLNA MAX2645HG: 2.3dB WLL 3.4GHz ~ 3.8GHz HG: 14.4dB LG: 15.5dB WLL 3.4GHz ~ 3.8GHz LG: -9.7dBMixer MAX268413.6dB LMDS, WLL 3.4GHz ~ 3.8GHz1dBMixer MAX998212dB Cellular, GSM825MHz ~ 915MHz 2.0dBReceiver System MAX2700 3.5dB ~ 19dB PCS, WLL 1.8GHz ~ 2.5GHz< 80dB* HG = High Gain Mode, LG = Low Gain ModeMeasurement methods vary for different applications. As shown in the table above, some applications have high gain and low noise figure (Low Noise Amplifiers under HG mode), some have low gain and high noise figure (mixers and LNAs under LG mode), some have very high gain and wide range of noise figure (receiver systems). Measurement methods have to be chosen carefully. In this article, a Noise Figure Meter as well as two other popular methods - "gain method" and "Y factor method" - will be discussed.Using a Noise Figure MeterNoise Figure Meter/Analyzer is employed as shown in Figure 1.Figure 1.The noise figure meter, such as Agilent N8973A Noise Figure Analyzer, generates a 28VDC pulse signal to drive a noise source (HP346A/B), which generates noise to drive the device under test (DUT). The output of the DUT is then measured by the noise figure analyzer. Since the input noise and Signal-to-Noise ratio of the noise source is known to the analyzer, the noise figure of the DUT can be calculated internally and displayed. For certain applications (mixers and receivers), a LO signal might be needed, as shown in Figure 1. Also, certain parameters need to be set up in the Noise Figure Meter before the measurement, such as frequency range, application (Amplifier/Mixer), etc.Using a noise figure meter is the most straightforward way to measure noise figure. In most cases it is also the most accurate. An engineer can measure the noise figure over a certain frequency range, and the analyzer can display the system gain together with the noise figure to help the measurement. A noise figure meter also has limitations. The analyzers have certain frequency limits. For example, the Agilent N8973A works from 10MHz to 3GHz. Also, when measuring high noise figures, e.g., noise figure exceeding 10dB, the result can be very inaccurate. This method requires very expensive equipment.Gain MethodAs mentioned above, there are other methods to measure noise figure besides directly using a noise figure meter. These methods involve more measurements as well as calculations, but under certain conditions, they turn out to be more convenient and more accurate. One popular method is called "Gain Method", which is based on the noise factor definition given earlier:In this definition, "Noise" is due to two effects. One is the interference that comes to the input of a RF system in the form of signals that differ from the desired one. The second is due to the random fluctuation of carriers in the RF system (LNA, mixer, receiver, etc). The second effect is a result of Brownian motion, It applies in thermal equilibrium to any electronic device, and the available noise power from the device is:P NA = kT∆F,Where k = Boltzmann's Constant (1.38 * 10-23 Joules/∆K),T = Temperature in Kelvin,∆F = Noise Bandwidth (Hz).At room temperature (290∆K), the noise power density P NAD = -174dBm/Hz.Thus we have the following equation:NF = P NOUT - (-174dBm/Hz + 10 * log10(BW) + Gain)In the equation, P NOUT is the measured total output noise power. -174dBm/Hz is the noise density of 290°K ambient noise. BW is the bandwidth of the frequency range of interest. Gain is the system gain. NF is the noise figure of the DUT. Everything in the equation is in log scale. To make the formula simpler, we can directly measure the output noise power density (in dBm/Hz), and the equation becomes:NF = P NOUTD + 174dBm/Hz - GainTo use the "Gain Method" to measure the noise figure, the gain of the DUT needs to be pre-determined. Then the input of the DUT is terminated with the characteristic impedance (50Ω for most RF applications, 75Ω for video/cable applications). Then the output noise power density is measured with a spectrum analyzer.The setup for Gain Method is shown in Figure 2.Figure 2.As an example, we measure the noise figure of the MAX2700. At a specified LNA gain setting and V AGC, the gain is measured to be 80dB. Then, set up the device as show above, and terminate the RF input with a 50Ωtermination. We read the output noise density to be -90dBm/Hz. To get a stable and accurate reading of the noise density, the optimum ratio of RBW (resolution bandwidth) and VBW (video bandwidth) is RBW/VBW = 0.3. Thus we can calculate the NF to be:-90dBm/Hz + 174dBm/Hz - 80dB = 4.0dB.The "Gain Method" can cover any frequency range, as long as the spectrum analyzer permits. The biggest limitation comes from the noise floor of the spectrum analyzer. As shown in the equations, when Noise Figure is low (sub 10dB), (P OUTD - Gain) is close to -170dBm/Hz. Normal LNA gain is about 20dB. In that case, we need to measure a noise power density of -150dBm/Hz, which is lower than the noise floor of most spectrum analyzers. In our example, the system gain is very high, thus most spectrum analyzers can accurately measure the noise figure. Similarly, if the Noise Figure of the DUT is very high (e.g., over 30dB), this method can also be very accurate.Y Factor MethodY Factor method is another popular way to measure Noise Figure. To use the Y factor method, an ENR (Excess Noise Ratio) source is needed. It is the same thing as the noise source we mentioned earlier in the "Noise Figure Meter" section. The setup is shown in the Figure 3:Figure 3.The ENR head usually requires a high DC voltage supply. For example, HP346A/B noise sources need 28VDC. Those ENR heads works are a very wide band (e.g.10MHz to 18GHz for the HP346A/B) and they have a standard noise figure parameter of their own at specified frequencies. An example table is given below. The noise figures at frequencies between those markers are extrapolated.Table 1. Example of ENR of Noise HeadsHP346A HP346BFrequency (Hz)NF (dB)NF (dB)1G 5.3915.052G 5.2815.013G 5.1114.864G 5.0714.825G 5.0714.81Turning the noise source on and off (by turning on and off the DC voltage), an engineer measures the change in the output noise power density with a spectrum analyzer. The formula to calculate noise figure is:In which ENR is the number given in the table above. It is normally listed on the ENR heads. Y is the difference between the output noise power density when the noise source is on and off.The equation comes from the following:An ENR noise head provides a noise source at two "noise temperatures": a hot T = TH (when a DC voltage is applied) and a cold T = 290°K. The definition of ENR of the noise head is:The excess noise is achieved by biasing a noisy diode. Now consider the ratio of power out from the amplifier (DUT) from applying the cold T = 290°K, followed by applying the hot T = T H as inputs:Y = G(Th + Tn)/G(290 + Tn) = (Th/290 + Tn/290)/(1 + Tn/290).This is the Y factor, from which this method gets its name.In terms of Noise figure, F = Tn/290+1, F is the noise factor (NF = 10 * log(F))Thus, Y = ENR/F+1. In this equation, everything is in linear regime, from this we can get the equation above.Again, let's use MAX2700 as an example of how to measure noise figure with the Y-factor method. The set up is show above in Figure 3. Connect a HP346A ENR noise head to the RF input. Connect a 28V DC supply voltage to the noise head. We can monitor the output noise density on a spectrum analyzer. By Turning off then turning on the DC power supply, the noise density increased from -90dBm/Hz to -87dBm/Hz. So Y = 3dB. Again to get a stable and accurate reading of the noise density, RBW/VBW is set to 0.3. From Table 1, at 2GHz, we get ENR = 5.28dB. Thus we can calculate the NF to be 5.3dB.SummaryIn this article, three methods to measure the noise figure of RF devices are discussed. They each have advantages and disadvantages and each is suitable for certain applications. Below is a summary table of the pros and cons. Theoretically, the measurement results of the same RF device should be identical, but due to limitations of RF equipment (availability, accuracy, frequency range, noise floor, etc), we have to carefully choose the best method to get the correct results.Suitable Applications Advantage DisadvantageNoise FigureMeter Super low NF Convenient, veryaccurate when measuringsuper low (0-2dB) NF.Expensive equipment, frequencyrange limitedGain Method Very high Gain or very highNF Easy setup, very accurateat measuring very highNF, suitable for anyfrequency rangeLimited by Spectrum Analyzernoise floor. Can't deal withsystems with low gain and lowNF.Y Factor Method Wide range of NF Can measure wide rangeof NF at any frequencyregardless of gainWhen measuring Very high NF,error could be large.Application Note 2875: /an2875More InformationFor technical support: /supportFor samples: /samplesOther questions and comments: /contactAutomatic UpdatesWould you like to be automatically notified when new application notes are published in your areas of interest? Sign up for EE-Mail.Related PartsMAX2640:QuickView-- Full (PDF) Data Sheet-- Free Samples MAX2641:QuickView-- Full (PDF) Data Sheet-- Free Samples MAX2642:QuickView-- Full (PDF) Data Sheet-- Free Samples MAX2643:QuickView-- Full (PDF) Data Sheet-- Free Samples MAX2645:QuickView-- Full (PDF) Data Sheet-- Free Samples MAX2648:QuickView-- Full (PDF) Data SheetMAX2649:QuickView-- Full (PDF) Data SheetMAX2654:QuickView-- Full (PDF) Data Sheet-- Free Samples MAX2655:QuickView-- Full (PDF) Data Sheet-- Free Samples MAX2656:QuickView-- Full (PDF) Data Sheet-- Free Samples MAX2684:QuickView-- Full (PDF) Data Sheet-- Free Samples MAX2700:QuickView-- Full (PDF) Data Sheet-- Free Samples MAX9982:QuickView-- Full (PDF) Data Sheet-- Free SamplesAN2875, AN 2875, APP2875, Appnote2875, Appnote 2875 Copyright © by Maxim Integrated ProductsAdditional legal notices: /legal。
现代数字信号处理仿真作业
第三章仿真作业3.17（1）代码clear;N=32;m=[-N+1:N-1];noise=(randn(1,N)+j*randn(1,N))/sqrt(2); f1=0.15;f2=0.17;f3=0.26;SNR1=30;SNR2=30;SNR3=27;A1=10^(SNR1/20);A2=10^(SNR2/20);A3=10^(SNR3/20);signal1=A1*exp(j*2*pi*f1*(0:N-1));signal2=A2*exp(j*2*pi*f2*(0:N-1));signal3=A3*exp(j*2*pi*f3*(0:N-1));un=signal1+signal2+signal3+noise;uk=fft(un,2*N);sk=(1/N) *abs(uk).^2;r0=ifft(sk);r1=[r0(N+2:2*N),r0(1:N)];r=xcorr(un,N-1,'biased');figuresubplot(2,2,1)stem(m,real(r1));xlabel('m');ylabel('FFT估计r1实部');subplot(2,2,2)stem(m,imag(r1));xlabel('m');ylabel('FFT估计r1虚部');subplot(2,2,3)stem(m,real(r));xlabel('m');ylabel('平均估计r实部');subplot(2,2,4)stem(m,imag(r));xlabel('m');ylabel('平均估计r虚部');仿真结果（2）代码 clear; N=256;noise=(randn(1,N)+j*randn(1,N))/sqrt(2); f1=0.15; f2=0.17; f3=0.26; SNR1=30; SNR2=30; SNR3=27;A1=10^(SNR1/20); A2=10^(SNR2/20); A3=10^(SNR3/20);signal1=A1*exp(j*2*pi*f1*(0:N-1)); signal2=A2*exp(j*2*pi*f2*(0:N-1)); signal3=A3*exp(j*2*pi*f3*(0:N-1)); un=signal1+signal2+signal3+noise;-40-2002040-200020004000mF F T 估计r 1实部-40-2002040-2000-1000010002000mF F T 估计r 1虚部-40-2002040-200020004000m平均估计r 实部-40-2002040-2000-1000010002000m平均估计r 虚部spr=fftshift((1/NF)*abs(fft(un,NF)).^2);f1=(0:length(spr)-1)*(1/(length(spr)-1))-0.5; M=64;r=xcorr(un,M,'biased');bt=fftshift(abs(fft(r,NF)));f2=(0:length(bt)-1)*(1/(length(bt)-1))-0.5; figuresubplot(1,2,1)plot(f1,10*log10(spr/max(spr))); xlabel('w/2pi'); 仿真结果（3） 代码clear; N=1000;fai1=rand(1,1)*2*pi; fai2=rand(1,1)*2*pi;noise=(randn(1,N)+j*randn(1,N))/sqrt(2);un=exp(j*0.5*pi*(0:N-1)+j*fai1)+exp(-j*0.3*pi*(0:N-1)+j*fai2)+noise; p=8;cx=xcorr(un,p,'biased'); rxx=cx(p+1:2*p)'; R=toeplitz(rxx); [u,s]=eig(R);w/2piw/2piww=[-128:128]/128*pi;e=exp(-j*ww'*[0:p-1])%k行m列ev=e*u(:,1:p-2);pw=1./real(diag(ev*ev'));plot(ww/(2*pi),10*log10(pw)/max(pw));仿真结果-4-0.5-0.4-0.3-0.2-0.100.10.20.30.40.53.20（1）代码clear;N=1000;fai1=rand(1,1)*2*pi;fai2=rand(1,1)*2*pi;noise=(randn(1,N)+j*randn(1,N))/sqrt(2);un=exp(j*0.5*pi*(0:N-1)+j*fai1)+exp(-j*0.3*pi*(0:N-1)+j*fai2)+noise;p=8;cx=xcorr(un,p,'biased');rxx=cx(p+1:2*p)';R=toeplitz(rxx);[u,s]=eig(R);nw=128;ww=[-128:128]/128*pi;e=exp(-j*ww'*[0:p-1])%k行m列ev=e*u(:,1:p-2);pw=1./real(diag(ev*ev'));plot(ww/(2*pi),10*log10(pw)/max(pw));仿真结果距离单位圆最近的两个解为-0.2363-0.9717i和0.3747+0.9271i，对应的归一化频率为0.1889和-0.2880（2）代码clear;N=1000;fai1=rand(1,1)*2*pi;fai2=rand(1,1)*2*pi;noise=(randn(1,N)+j*randn(1,N))/sqrt(2);un=exp(j*0.5*pi*(0:N-1)+j*fai1)+exp(-j*0.3*pi*(0:N-1)+j*fai2)+noise; p=8;cx=xcorr(un,p,'biased');rxx=cx(p+1:2*p)';R=toeplitz(rxx);[u,s]=eig(R);nw=128;ww=[-128:128]/128*pi;e=exp(-j*ww'*[0:p-1])%k行m列ev=e*u(:,1:p-2);pw=1./real(diag(ev*ev'));plot(ww/(2*pi),10*log10(pw)/max(pw));仿真结果3.21-2-1123456-3clear;N=1000;fai1=rand(1,1)*2*pi;fai2=rand(1,1)*2*pi;noise=(randn(1,N)+j*randn(1,N))/sqrt(2);un=exp(j*0.5*pi*(0:N-1)+j*fai1)+exp(-j*0.3*pi*(0:N-1)+j*fai2)+noise; p=8;for k=1:N-pxs(:,k)=un(k+p-1:-1:k)';endrxx=xs(:,1:end-1)*xs(:,1:end-1)'/(N-p-1);rxy=xs(:,1:end-1)*xs(:,2:end)'/(N-p-1);[u,e]=svd(rxx);ev=diag(e);emin=ev(end);z=[zeros(p-1,1),eye(p-1);0,zeros(1,p-1)];cxx=rxx-emin*eye(p);cxy=rxy-emin*z;[U,E]=eig(cxx,cxy);Z=diag(E);ph=angle(Z)/(2*pi);err=abs(abs(Z)-1);仿真结果最接近单位圆的两个解分别为0.5867+0.8097i和0.0349-0.9984i，对应的归一化频率为0.1502和-0.2444。
纹理物体缺陷的视觉检测算法研究--优秀毕业论文
摘 要
在竞争激烈的工业自动化生产过程中，机器视觉对产品质量的把关起着举足 轻重的作用，机器视觉在缺陷检测技术方面的应用也逐渐普遍起来。与常规的检 测技术相比，自动化的视觉检测系统更加经济、快捷、高效与 安全。纹理物体在 工业生产中广泛存在，像用于半导体装配和封装底板和发光二极管，现代 化电子 系统中的印制电路板，以及纺织行业中的布匹和织物等都可认为是含有纹理特征 的物体。本论文主要致力于纹理物体的缺陷检测技术研究，为纹理物体的自动化 检测提供高效而可靠的检测算法。 纹理是描述图像内容的重要特征，纹理分析也已经被成功的应用与纹理分割 和纹理分类当中。本研究提出了一种基于纹理分析技术和参考比较方式的缺陷检 测算法。这种算法能容忍物体变形引起的图像配准误差，对纹理的影响也具有鲁 棒性。本算法旨在为检测出的缺陷区域提供丰富而重要的物理意义，如缺陷区域 的大小、形状、亮度对比度及空间分布等。同时，在参考图像可行的情况下，本 算法可用于同质纹理物体和非同质纹理物体的检测，对非纹理物体 的检测也可取 得不错的效果。 在整个检测过程中，我们采用了可调控金字塔的纹理分析和重构技术。与传 统的小波纹理分析技术不同，我们在小波域中加入处理物体变形和纹理影响的容 忍度控制算法，来实现容忍物体变形和对纹理影响鲁棒的目的。最后可调控金字 塔的重构保证了缺陷区域物理意义恢复的准确性。实验阶段，我们检测了一系列 具有实际应用价值的图像。实验结果表明 本文提出的纹理物体缺陷检测算法具有 高效性和易于实现性。 关键字: 缺陷检测；纹理；物体变形；可调控金字塔；重构
Keywords: defect detection, texture, object distortion, steerable pyramid, reconstruction
II
Ripple and Noise measurement
BTCPower AN01Ripple and NoiseR ipple is the output voltage fluctuation associated with the switching of the converter.Each switchingtransition pumps energy to the output, which causes it to rise a little.The typical switching frequency used in IMT converter is 250 to 350KHz.Therefore, the output noise frequency is in the 500KHz to 700KHz range. Typical value of the ripple is 1% to 2% of output.Noiseon the other hand, are higher frequency components, commonly known as ‘spikes’.Reduction of these ‘spikes’noise can be achieved by adding a 1µF ceramic chip capacitor and a 100µF tantalum capacitor in parallel to the +OUT and -OUT near the load.See Figure 10.Figure 10.Capacitor in Parallel ConnectionFigure 11.Ripple and Noise Chart Measuring Output Noise and RippleMeasuring output noise and ripple requires a basic understanding of the high frequency nature of noise.Very often, ‘noise’(as commonly measured) is actually the vector sum of common and differential mode noise. Common mode noise is common to both outputs ( i.e+OUT and -OUT) with respect to chassis or earth ground. Differential mode noise is found at one output with respect to the other.While the system load can be affected by differential mode noise, it is seldom affected by common mode noise.The common mode noise is often only created in the process of measuring the differential mode noise.Noise can be measured as root mean square (RMS) or peak to peak.Low frequency noise with a low peak to average ratio is often measured as RMS.High frequency spike noise is measured more accurately with an oscilloscope as peak to peak noise (Figure 11).Accurate measurement of output noise and ripple requires special attention to equipment used, measuring probes and the understanding of noises.The dc/dc converter switches large amount of output power when compared to the amplitude of the noise being measured.This means that even a few inches of open ground wire in the oscilloscope probe may pick up a fraction of a volt of noise if these probes are not properly connected to the measurement point.The preferred test to measure noise and ripple includes a custom probe made from a length of RG58A/U coaxial cable.It is connected to the oscilloscope with a BNC ‘T’connector, which is terminated with a 47 W carbon composition resistor in series with a 0.68µF Z5U capacitor. The other end of the coaxial is left bare.See Figure 12.Figure12.Set up for Measuring Noise and RippleBTCPower AN01Measure noise as closely as possible to the converter’s output terminals to reduce noise pick up.If an oscilloscope probe must be used, it must be set up for high frequency measurements.The greatest source of error is usually the unshielded portion of the oscilloscope probe.Voltage errors induced by magnetic radiation in the loop can easily suppress the actual values.T o reduce measurement errors, keep unshielded leads as short as possible.To prepare the probe for high frequency measurement, first remove the clip-on ground wire and the probe body fishhook adapter.Then attach a special tip and ground lead assembly as shown in Figure 13.Figure 13.High Frequency Measurement Set Up.To determine the presence of common mode noise, connect both the tip and the ground lead of the oscilloscope to the -OUT pin.The appearance of waveform on the screen suggests the presence of common mode noise.Such noise may be eliminated or reduced as suggested below:1) Wrap the oscilloscope probe lead several timesaround a large diameter Nickel Zinc ferrite toroid(permeability about 1600).This will act as a balun orcommon mode inductor.It increases common modeimpedance without significantly increasing differential mode impedance.2)Isolate the oscilloscope power source from the linevoltage with an isolation transformer.3) Wrap the power source AC line cord several timesaround a large diameter nickel zinc ferrite toroid.This will also reduce the common mode current.4) Do not use the ground lead clipped to most commonoscilloscope probes.The loop of wire itself will pick up the high frequency radiated noise and will giveerroneous readings.Measuring Equipment Set upThe power supply to the converter should be mounted about 1" away from the ground shield (or ground plane) which consist of a aluminium or copper sheet.The dimension of the aluminium or copper sheet should be at least as large as the power supply itself.If the power supply is provided with a ‘L’bracket, this can be served as the ‘ground’plane.Chassis grounding points on the PCB where the converters is mounted, including the ‘green wire’terminal for the line input ground lead, should be electrically connected to this shield with a short conductor no more than 2”long.The ground plane should be electrically connected to the conduit or the ground of a 3 prong safety plug.The set up above is very important to ensure that the noise from the power supply itself does not interfere with the measurement.Measuring of the noise and ripple is made with the output return connected to the ground plane.If the power supply has more than one return, all the returns should be connected to the ground plane.Measurement ProcedureA 12" of twisted #16AWG wire with a 47µF capacitor at an appropriate voltage rating and polarity is conencted to an output terminal and return.The noise measurement is taken across the capacitor with a 50 Mhz or greater bandwidth oscilloscope.See Figure 14.The ground lead should be as short as possible, preferrably the type which clips onto the barrel of the probe at one end of the probe body.Figure14.Noise Measurement ProcedureConnecting the dc/dc converterSet up the dc/dc converter as shown in Figure 15.Figure15.Converter Set UpBTCPower AN01Two 2.2nF / 250 Vac ‘Y’capacitor are connected between each of the inputs ( -IN and +IN) to the base plate.The base plate as well as the attached heat sink should have a solid connection to the ground plane.The purpose of the Y-caps is to provide a balanced low impedence path to ground for the common mode noise.BTCPower has a specially designed fixture for measuring these noise and ripple.This is shown in Figure 16.This fixture consist of a coaxial like cable with a #16AWG wire inside a cylindrical copper shield.The #16 wire is connected to the +OUT and the copper shield is connected to the -OUT. A ‘BNC’connector is used to connect the coaxial cable to the oscilloscope.With this arrangement, minimum loop is obtained and accurate measurements can be achieved.Note that a 47µF capacitor still needs to be connected across the -OUT and +OUT pins.BTCPower’s evaluation boards have the above fixture installed to facilitate easy measurements of the output noise and ripple.Please call the factory to obtain these boards.These board can also be used to evaluate the performance of IMT converters.See Figure17 for Evaluation Boards.Figure 17.BTC Evaluation Boards Measuring Noise and Ripple using BTCPower’s Evaluation Board.Obtain a 1:1 coaxial cable with a female BNC connector at each end. A ceramic capacitor of 0.68uF connected in series with the 50 Ohms resister is installed at the BNC located at the oscilloscope end of the coaxial cable.Please see Figure18.The purpose of the capacitor is to block the DC power from dissipating in the resistor.If the DC voltage being measured is less than 5 volts and a 1 Watt carbon composition resistor is used, the capacitor may not be needed.In this case, just a 50 ohm resistor is connected to reduce power dissipation caused by the DC component.In addition, there is potential for a ground loop to be formed from AC power ground connecting to Oscilloscope probe ground.To check this problem, connect the probe tip and its ground to the -OUT of the dc/dc converter.If there are signals generated on the scope, then the common mode noise due to this ground loop exists.In such a case, an isolation transformer is needed for the oscilloscope.A good isolation transformer must have the primary and secondary on separate bobbin, with ground shield between them.Alternatively, use a differential probe such as the T ektronix 5200 for accurate measurements.Picture16.SpecialFixture forMeasuring NoiseRippleFigure 18.Special Coaxial Cable。
语音增强报告(谱减法和维纳滤波)
语音增强报告(谱减法和维纳滤波)Speech Enhancement一、语音增强方法的理论分析 (2)1.引言 (2)2.语音增强算法 (2)2.1谱减法 (2)2.2 Wiener滤波法 (3)二、谱减法 (5)1.算法实现 (5)2.改善算法，减少音乐噪声 (9)三、Wiener滤波法 (11)1.算法实现 (11)2.迭代Wiener滤波的算法实现 (14)四、Wiener滤波法与谱减法的比较 (17)五、参考文献 (17)一、语音增强方法的理论分析1.引言语音增强的目标是从含有噪声的语音信号中提取尽可能纯净的原始语音。
然而，由于干扰通常都是随机的，从带噪语音中提取完全纯净的语音几乎不可能。
在这种情况下，语音增强的目的主要有两个：一是改进语音质量，消除背景噪音，使听者乐于接受，不感觉疲劳，这是一种主观度量；二是提高语音可懂度，这是一种客观度量。
这两个目的往往不能兼得，所以实际应用中总是视具体情况而有所侧重的。
带噪语音的噪声类型可以分为加性噪声和非加性噪声。
加性噪声有宽带的，窄带的，平稳的，非平稳的，白噪声，有色噪声，等；非加性噪声如乘性噪声，卷积噪声等。
一般，语音增强处理的噪声指环境中的噪声，而这些噪声主要是高斯白噪声，这种噪声一般符合如下的假设：(1)噪声是加性的。
(2)噪声是局部平稳的。
局部平稳是指一段加噪语音中的噪声，具有和语音段开始前那段噪声相同的统计特性，且在整个语音段中保持不变。
也就是说，可以根据语音开始前那段噪声来估计语音中所叠加的噪声统计特性。
(3)噪声与语音统计独立或不相关。
2.语音增强算法根据语音和噪声的特点，出现了很多种语音增强算法。
比较常用的有噪声对消法、谱相减法、维纳滤波法、卡尔曼滤波法、FIR 自适应滤波法等。
此外，随着科学技术的发展又出现了一些新的增强技术，如基于神经网络的语音增强、基于HMM 的语音增强、基于听觉感知的语音增强、基于多分辨率分析的语音增强、基于语音产生模型的线性滤波法、基于小波变换的语音增强方法、梳状滤波法、自相关法、基于语音模型的语音增强方法等。
长途光缆波分复用(WDM)传输系统工程设计规范
前言2000年编制的《长途光缆波分复用（WDM）传输系统工程设计暂行规定》YD/T 5092-2000已使用多年。
近几年，随着光通信技术的快速发展，行业标准也在不断完善，《光波分复用（WDM）终端设备技术要求－16x10Gb/s、32x10Gb/s部分》YD/T 1273-2003、《光波分复用系统（WDM）技术要求－160x10Gb/s、80x10Gb/s部分》YD/T 1274-2003、《波分复用系统（WDM）光安全进程技术要求》YD/T 1259-2003等有关规范陆续出台，原有的部分设备技术也不再适用当前需要。
为适应我国电信业的发展，依据信息产业部信部规函[2004]508号“关于安排《通信工程建设标准》修订和制定计划的通知”的要求，重新修订原规范。
本规范根据我国近些年新建的多条长途光缆WDM工程的设计实践经验进行编制。
本规范对原规范进行了修改、补充、增删和细化。
经反复讨论修改，后经有关部门会审定稿。
本设计规范与《长途光缆波分复用（WDM）传输系统工程设计暂行规定》YD/T 5092-2000的主要差异如下：——增加了10Gb/s WDM系统有关内容；——结合国内的应用情况进行了适当调整；本规范主管单位：信息产业部综合规划司。
本规范具体条文解释单位：京移通信设计院有限公司，地址：北京市西直门内大街126号，邮编：100035。
本规范原主编单位：信息产业部北京邮电设计院。
本规范修订主编单位：京移通信设计院有限公司。
本规范主要起草人：李勇、宋力。
目次前言 ...................................................................................................................................................... １1．总则 ............................................................................................................................................ ３2．名词术语 .................................................................................................................................. ４3．系统制式及系统设计 .................................................................................................................... ６3．1 波分复用光线路系统特性 ................................................................................................ ６3．2 系统组成、分类 ................................................................................................................ ６3．3 光线路系统主光通道接口 ................................................................................................ ７3．4 光通路信号光接口 ........................................................................................................ １２3．5 光通道 ............................................................................................................................ １９3．6 光监控通路 .................................................................................................................... ２０3．7 光纤类型 ........................................................................................................................ ２０3．8 系统结构、系统通路数量配置及通路信号速率选用 ................................................ ２１3．9 站址设置 ........................................................................................................................ ２２3．10 公务联络系统设置 ...................................................................................................... ２３3．11 放大器功率控制 .......................................................................................................... ２３3．12 光性能监测 .................................................................................................................. ２３4．网络管理 .............................................................................................................................. ２４4．1 网络管理分级 ................................................................................................................ ２４4．2 网络管理配置 ................................................................................................................ ２４4．3 网络管理系统的保护 .................................................................................................... ２４5 网络保护 ............................................................................................................................ ２６5．1 网络拓扑 ........................................................................................................................ ２６5．2 保护方式的选用 ............................................................................................................ ２６6．供电方式 .............................................................................................................................. ２７7．传输性能设计指标 .................................................................................................................... ２８7．1 光信噪比 ........................................................................................................................ ２８7．2 误码性能 ........................................................................................................................ ２８7．3 抖动性能 ........................................................................................................................ ２９8．安全要求 .................................................................................................................................... ３１附录A 32/40×2.5Gbit/s WDM系统主通道参数......................................................................... ３２附录B 16×10Gbit/s WDM系统主通道参数................................................................................. ３３附录C 32/40×10Gbit/s WDM系统主通道参数.......................................................................... ３５附录D 80/160×10Gbit/s WDM系统主通道参数 ....................................................................... ３７附录E 发送端OTU的接口参数................................................................................................ ３９附录F 作为再生中继器OTU的接口参数................................................................................ ４２附录G 接收端OTU的接口参数 ............................................................................................... ４５附录H 本规定用词说明............................................................................................................ ４７附：条文说明 .................................................................................................................................. ４８1．总则1．0．1 《长途光缆波分复用（WDM）传输系统工程设计规范》（以下简称“本规范”）适用于新建及改、扩建承载10Gbit/s速率以下SDH信号的单纤单向WDM传输系统的工程设计。
RF_System_Formulas
RF System FormulasIulian Rosu, YO3DAC / VA3IUL, /va3iul/ Noise_Floor[dBm] = – 174 + 10*LOG (BW[Hz]) + Noise_Figure[dB] + Gain[dB]Minimum_Detectable_Signal[dBm] = [–174 + 3dB] + 10*LOG(BW[Hz]) + Noise_Figure[dB]Spurious_Free_Dynamic_Range[dB] ord 2 = (1/2) * [174 + IIP2[dBm] – Noise_Figure[dB] – 10*LOG(BW[Hz])]Spurious_Free_Dynamic_Range[dB] ord 3 = (2/3) * [174+ IIP3[dBm] – Noise_Figure(dB) – 10*LOG(BW[Hz])]Noise_Figure[dB] = 174+ RX_Sensitivity[dBm] – 10*LOG(BW[Hz]) – Signal/Noise[dB]RX_Sensitivity[dBm] = –174+ 10*LOG(BW[Hz]) + Noise_Figure[dB] + Signal/Noise[dB]Signal/Noise[dB] = 174+ RX_Sensitivity[dBm] – 10*LOG(BW[Hz]) – Noise_Figure[dB]RX_Dynamic_Range[dB] = RX_Sensitivity[dBm] – P1dB[dBm]Blocking_Dynamic_Range[dB] = P1dB[dBm] - Noise_Floor[dBm] - Signal/Noise[dB]Co-channel_rejection[dB] = Co-channel_interferer[dBm] - RX_Sensitivity[dBm]RX_selectivity[dB] = - Co-ch_rejection[dB] – 10*LOG[10(-IF_filter_rej[dB]/10) +10(-LO_spur[dBc]/10) +IF_BW[Hz] * 10(SB_Noise[dBc/Hz]/10)] Image_frequency[MHz] = RF_frequency[MHz] ± 2*IF_frequency[MHz]Half_IF[MHz] = RF_frequency[MHz] ± IF_frequency[MHz] / 2Half_IF[dBm] = [OIP2[dBm] – RX_Sensitivity[dBm] – Co-channel_rejection[dB] ] / 2IM_rejection[dB] = [2*IIP3[dBm] – 2* RX_Sensitivity[dBm] – Co-Channel_rejection[dB] ] / 3IIP3[dBm] = Interferer_level[dBm] + [Interferer_level[dBm] – RX_level[dBm] + Signal/Noise[dB] ] / 2OIP3[dBm] = Pout[dBm] + [IM3[dBc] / 2] = Pout[dBm] + [Pout[dBm] – IM3[dBm]] / 2IM3[dBm] = 3* Pout[dBm] – 2*OIP3[dBm]IM3out unequal_input_levels(left_side)[dBm] = Pout_Left[dBm] – 2*[OIP3[dBm] – Pout_Right[dBm]]OIP2[dBm] = Pout[dBm] + IM2[dBc] = 2 * Pout[dBm] – IM2[dBm]IM2[dBm] = 2 * Pout[dBm] - OIP2[dBm]IIP2(cascaded_stages)[dBm] = IIP2last stage[dBm] – Gain total[dB] + Selectivity @ 1/2 IF[dB]IIP2(Direct_Conversion_Receiver)[dBm]≥ 2*AM_Interferer[dBm] – Noise_Floor[dBm]Full_Duplex_Noise@RX_inp[dBm] = –174– TX_Noise@RX_band[dBm/Hz] – Duplexer_rejection[dB]Crest_Factor[dB] = 10*LOG[Peak_Power(w) / Average_Power[w]]= Peak_Power[dBm] – Average_Power[dBm] MultiCarrier_Peak_to_Average_Ratio[dB] = 10*LOG(Number_of_Carriers)MultiCarrier_Total_Power[dBm] = 10*LOG(Number_of_Carriers) + Carrier_Power[dBm]Processing_Gain[dB] = 10*LOG[BW[Hz] / Data_Rate[Hz]]Eb/No[dB] = S/N[dB] + 10*LOG[BW[Hz] / Data_Rate[Hz]]RX_Input_Noise_Power_max[dBm] = Sensitivity[dBm] + Processing_Gain[dB] - Eb/No[dB]Carrier_Noise_Ratio[dB] = 10*LOG[Eb/No] + 10*LOG[Bit_Rate[bps] / BW[Hz]]Bandwidth_Efficiency[bps/Hz] = Bit_Rate[bps] / BW[Hz]Integer_PLL_freq_out[MHz] = [N (VCO_divider) / R (Ref_divider)] * Reference_frequency[MHz]Required_LO_PhaseNoise[dBc/Hz] = RX_level[dBm] – Blocking_level[dBm] – Signal/Noise[dB] – 10*LOG(BW[Hz])PLL_PhaseNoise[dBc/Hz] = 1Hz_Normalized_PhaiseNoise[dBc/Hz] + 10*LOG(Comparison Frequency[Hz]) + 20*LOG(N) PLL_Lock_Time[usec] = [400 / Loop_BW[kHz]] * [1-10*LOG(Frequency_tolerance[Hz] / Frequency_jump[Hz])]PLL_Switching_Time[usec] = 50 / F_comparison[MHz] = 2.5 / Loop_Bandwidth[MHz]PhaseNoise_on_SpectrumAnalyzer[dBc/Hz] = Carrier_Power[dBm] – Noise_Power@Freq_offset[dBm] – 10*LOG(RBW[Hz])PLL_Phase_Error RMS [°] = 107 * 10(PhaseNoise[dBc/Hz] / 20)PLL_Jitter[seconds] = PLL_Phase_Error RMS [°] / (360*Frequency[Hz])EVM RMS [%] = 1.74 * PLL_Phase_Error RMS [°]TX_PhaseNoise_limit[dBc/Hz] = Power_limit@Offset_from_carrier[dBc] + 10*LOG(BW[Hz])ACLR[dBc] = 20.75 + 1.6*Crest_Factor[dB] + 2*[Input_Power[dBm] – PA_IIP3[dBm] sine]EVM[%] = [10(-Signal/Noise[dB] / 20)]*100 ó EVM[dB] = 20*LOG(EVM[%] / 100)Signal/Noise[dB] = 20*LOG(EVM[%] / 100)Corrected_EVM[%]ADC_SNR[dB] = (Nr_of_Bits*6.02) + 1.76 + 10*LOG(Sampling_Frequency[Hz] / 2*BW[Hz])ADC_Nyquist_frequency[Hz] = Sampling_Frequency[Hz] / 2ADC_NoiseFigure[dB] = Full_Scale_Pin[dBm] – SNR[dB] – 10*LOG(FS_sampling_rate / 2 ) – Thermal_Noise[dBm/Hz]ADC_NoiseFloor[dBFS] = SNR[dB] + 10*LOG(FS_sampling_rate / 2)ADC_Spurious_Free_Dynamic_Range[dB] = Desired_Input_Signal[0dB] – Highest_Amplitude_Spurious[dB]ADC_Input_Dynamic_Range[dB] = 20*LOG(2Nr_of_Bits -1)VSWR = (1+Γ) / (1– Γ) = (Vinc + Vref) / (Vinc – Vref) = (Z L – Zo) / (Z L + Zo)Reflection_Coefficient Γ = (VSWR – 1) / (VSWR + 1) = Vref / VincReturn_Loss [dB] = - 20*LOG(Γ)Missmatch_Loss[dB] = - 10*LOG [1 – Γ 2]Reflected_Power[W] = Incident_Power[W] * Γ 2[W]* [VSWR/(1+VSWR2)]Resonant_Frequency[Hz] =L = Xs / ω ; C = 1 / (ω(series LC)= Xs / Rs ; Q (parallel LC) = Rp / Xp Free_Space_Path_Loss[dB] = 27.6 – 20*LOG[Frequency[MHz]] – 20*LOG[Distance[m]]RX_inp_level[dBm] = TX_Power[dBm] + TX_Ant_Gain[dB] – Free_Space_Path_Loss[dB] – Cable_loss[dB]+ Rx_Ant_Gain[dB] Antenna_Polarization_Mismatch_Loss[dB]Antenna_Factor[dB] = 20*LOG[(12.56 / λ[m]EIRP[W] = Power[W] * 10Antenna_Factor[dB] / 10Antenna_Near_Field[m] = 2 * Antenna_Dimension2[m]/ λ[m]Te = (Noise Factor[lin] – 1) * To [290K]ENR(Excess_Noise_Ratio) = 10*LOG [(T ENR – To [290K]) / To [290K] ]Noise_Figure_Test(Y_Factor_Method)[dB] = 10*LOG[(10(ENR/10))/(10(Y/10))] ; Y = NF out - NFinpAM_Total_Power[W] = Power_carrier[W] * [(1+AM_Modulation_Index2) / 2]AM_Bandwidth[Hz] = 2 * Highest_Modulation_Frequency[Hz]FM_Modulation_Index = Max_Frequency_Deviation[Hz] / Max_Modulation_Frequency[Hz]FM_Bandwidth[Hz] = 2 * Max_Modulation_Frequency[Hz] * [1+ FM_Modulation_Index]Noise_Figure= 10*LOG(F) IP3 (all linear) – Cascaded StagesNoise Factor (all linear) – Identical Cascaded StagesNoise Temperature – Cascaded Stages。
Keysight NFA系列噪声度分析器说明书
Noise Figure AnalyzersN8972A N8973A N8974A N8975ANFA SeriesA Flexible and Intuitive User InterfaceThe user interface on the new NFA series of Noise Figure Analyzers is intuitive and easy to use, with easy to find keys, which are sized and then placed in the relevant key group according to function. The soft-key depths have been kept to a minimum and there are clear visual indicators on the screen showing the current machine state.Easy Measurement SetupThe NFA series of Noise Figure Analyzers now takes the pain out of complex measurement setups, with their simple but instructive menus. The built-in help button gives key function and remote pro-gramming commands, that should eliminate the need to carry man-uals when setting up measurements.Low Instrumentation UncertaintyWhen making noise figure measurements, a key parameter to be aware of is measurement uncertainty. The NFA has a low instru-mentation uncertainty to aid in accurate and repeatable measure-ment of manufacturers’ components. In addition, to aid customers in setting their components/systems specifications, Agilent has pro-duced a web-based uncertainty calculator that will give customers information on how to improve and classify their measurement specifications more accurately.For more information, visit our web site at: /find/nfIncrease Measurement ThroughputIn manufacturing environments, fast measurement speed and repeatability are critical. The NFA series of Noise Figure Analyzers now include many features that can reduce your measurement time and increase throughput. The frequency list function allows you to select specific points within a complete measurement span to make your measurement. The Sweep averaging function allows a real-time update to the screen during a measurement, as you adjust the per-formance of the DUT during a sweep. Both these functions, as well as the limit line functionality for quick and easy pass/fail testing and the additional ability to recall complete calibrated instrument states, increase productivity and measurement throughput.Enhanced ConnectivityThe built-in floppy disk drive, GPIB, RS232 serial and Printer port connectors allow quick and easy data transfer between the analyzer and a PC or workstation. There is also a built-in VGA connector for connecting a large-screen monitor.Color Graphical DisplayTo enhance usability, the new Noise Figure Analyzers now come with an integrated 17 cm full color LCD display, for simultaneous viewing of noise figure and gain against frequency. There are three different formats for viewing measurements, the two separate chan-nel or combined graph format, a table format, and a spot frequency noise figure and gain measurement “meter” format.Ease of AutomationThe NFA series of Noise Figure Analyzers include 2 industry-stan-dard GPIB ports and an RS232 serial port, to aid in the automated control of the instrument. The second GPIB port is dedicated to Local oscillator control. The default control language is SCPI, but users can also define custom LO commands.Ease of IntegrationTo aid with the integration of the new analyzer into manufacturing environments, Agilent has produced a Programmers Reference Manual containing example programs to help migrate to the new system. The NFA is not code compatible with the 8970B, nor can it control the 8971C.Full Measurement CapabilityFeatures present in all NFA series noise figure analyzers•ENR data automatically loaded into NFA series noise figure analyzer when using SNS noise source•Floppy disk loading and saving of ENR data when used with a 346 or 347 noise source•Enhanced analysis through Limit lines and Marker functions •Enhanced PC and printer connectivity and VGA output•Internal data storage capable of storing up to 30 different state,trace, and setup files (dependent upon measurement complexity)•4 MHz measurement bandwidth•Frequency list mode, which enables the user to avoid known, polluted frequencies during a measurement or, used tactically to speed up a measurementFeatures only Available on the N8973A, N8974A, N8975A•Lower noise figure measurement uncertainty ±<0.05 dB•Six user selectable bandwidths (100 KHz, 200 KHz, 400 KHz, 1 MHz, 2 MHz, and 4 MHz)• Enhanced speed•A flexible and intuitive user interface •Easy measurement setup •Low instrument uncertainty•Color graphical display of noise figure and gain versus frequency •Enhanced PC and printer connectivity•SNS, 346 and 347 Series noise source compatible•Ability to automatically upload ENR calibration data from SNS Series noise source•Local oscillator control through second dedicated GP-IB •3-year warranty as standardN8973ANoise Figure AnalyzersN8972A N8973A N8974A N8975A NFA Series Key SpecificationsSpecifications apply over 0°C to +55°C unless otherwise noted. Theanalyzer will meet its specifications after 2 hours of storage withinthe operating temperature range, 60 minutes after the analyzer isturned on, with Alignment running. A user calibration is requiredbefore corrected measurements can be made.Frequency RangeNFA Series:N8972A10 MHz to 1.5 GHzN8973A10 MHz to 3 GHzN8974A10 MHz to 6.7 GHzN8975A10 MHz to 26.5 GHzMeasurement Speed (nominal)8 Averages 64 AveragesN8972A:<100 ms/measurement<80 ms/measurementN8973A:<50 ms/measurement<42 ms/measurementN8974A:<70 ms/measurement<50 ms/measurementN8975A:<70 ms/measurement <50 ms/measurementMeasurement Bandwidth (nominal)N8972A:4 MHzN8973A, N8974A, N8975A:4 MHz, 2 MHz, 1 MHz, 400 kHz, 200 kHz, 100 kHzNoise Figure and Gain(Performance is dependent upon ENR of noise source used)N8972A Noise Source ENR4 – 7 dB12 – 17 dB20 – 22 dBNoise FigureMeasurement range0 to 20 dB0 to 30 dB0 to 35 dBInstrument uncertainty±<0.1 dB±<0.1 dB±<0.15 dBGainMeasurement range–20 to +40 dBInstrument uncertainty±<0.17 dBN8973A, N8974A and Noise Source ENRN8975A(10 MHz to 3.0 GHz) 4 – 7 dB12 – 17 dB20 – 22 dBNoise FigureMeasurement range0 to 20 dB0 to 30 dB0 to 35 dBInstrument uncertainty±<0.05 dB±<0.05 dB±<0.1 dBGainMeasurement range –20 to +40 dBInstrument uncertainty±<0.17 dBN8974A and N8975A Noise Source ENR(>3.0 GHz) 4 – 7 dB12 – 17 dB20 – 22 dBNoise FigureMeasurement range0 to 20 dB0 to 30 dB0 to 35 dBInstrument uncertainty±<0.15 dB±<0.15 dB±<0.2 dBGainMeasurement range–20 to +40 dBInstrument uncertainty±<0.17 dBCharacteristic1Noise figure at 23ºC ±3ºC (10 MHz to 3.0 GHz)Characteristic1Noise figure at 23ºC ±3ºC (3.0 GHz to 26.5 GHz)Characteristic values are met or bettered by 90% of instruments with 90%confidence.Frequency ReferenceStandard Opt.1D5Aging±<2 ppm1/year±<0.1 ppm/yearTemperature stability±<6 ppm±<0.01 ppmSettability ±<0.5 ppm±<0.01 ppmTuning Accuracy (Start, Stop, Center, Marker)4 MHz Measurement Bandwidth (default on all models of Noise FigureAnalyzer)Frequency Error10 MHz – 3.0 GHz±<Reference error + 100 kHz3.0 GHz – 26.5 GHz±<Reference error + 400 kHz<4MHz Measurement Bandwidth (functionality not present in N8972A)Frequency Error10 MHz – 3.0 GHz±<Reference error + 20 kHz3.0 GHz – 26.5 GHz±<Reference error + 20% of measurementbandwidthParts Per Million (10e-6)1086421050010001500200025003000Frequency (MHz)NoiseFigure(dB)8911112Frequency (MHz)NoiseFigure(dB)3388347756517418833818791871721956118112724136814492153761626171451829189131879716812156522419233342421251225986265Noise Figure AnalyzersN8972A N8973A N8974A N8975AGeneral SpecificationsDimensionsWithout handle: 222 mm H x 375 mm W x 410 mm D With handle (max): 222 mm H x 409 mm W x 515 mm D Weight (typical, without options)N8972A:15.3 kg N8973A:15.5 kg N8974A:17.5 kg N8975A:17.5 kgData Storage (nominal)Internal drive: 30 traces, states or ENR tables Floppy disk: 30 traces, states or ENR tablesPower RequirementsOn (line 1): 90 to 132 V rms, 47 to 440 Hz, 195 to 250 V rms, 47 to 66 Hz Power consumption: <300 W Standby (line 0): <5 W Temperature RangeOperating: 0ºC to +55ºC Storage: –40ºC to +70ºCHumidity RangeOperating: Up to 95% relative humidity to 40ºC (non-condensing)Altitude range: Operating to 4,600 meters Calibration Interval1-year minimum recommendedElectromagnetic CompatibilityComplies with the requirements of the EMC directive 89/336/EEC. This includes Generic Immunity Standard EN 50082-1:1992 and Radiated Interference Standard CISPR 11:1990/EN 55011:1991, Group 1 Class A.The conducted and radiated emissions performance typically meets CISPR 11:1990/EN 55011:1991 Group 1 Class B limits.Warranty3-Year warranty as standardKey LiteratureNoise Figure Analyzers, NFA Series, Brochure, p/n 5980-0166ENoise Figure Analyzers, NFA Series, Data Sheet, p/n 5980-0164ENoise Figure Analyzers, NFA Series, Configuration Guide, p/n 5980-0163EFundamentals of RF and Microwave Noise Figure Measurements, App note 57-1, p/n 5952-8255E Noise Figure Measurement Accuracy, App note 57-2, p/n 5952-370610 Hints for Making Successful Noise Figure Measurements, p/n 5980-0228E N8972A and N8973A, NFA Series, Noise Figure Analyzer ProgrammingExamples, p/n 5968-9498EOrdering InformationN8972A 10 MHz to 1.5 GHz NFA Series Noise Figure Analyzer N8973A 10 MHz to 3.0 GHz NFA Series Noise Figure Analyzer N8974A 10 MHz to 6.7 GHz NFA Series Noise Figure Analyzer N8975A 10 MHz to 26.5 GHz NFA Series Noise Figure AnalyzerAll options, other than those marked with *, can be ordered at any time for use with an instrument.Frequency ReferenceN897xA-1D5NFA series high stability frequency reference*Calibration DocumentationN897xA-A6J NFA series ANSI Z540 compliant calibration with test data*AccessoriesN897xA-1CP NFA series rackmount and handle kit N897xA-UK9NFA series front panel coverN897xA-1FP NFA series calibration, performance verification and adjustment softwareDocumentationA hard copy and CD version of the English language Quick Reference Guide, User’s Guide, Programmers Reference, and Calibration andPerformance Verification Manual are included with the NFA as standard.Selections can be made to change the localization of the manual set or to delete the hardcopy.N897xA-AB0NFA series manual set for Taiwan – Chinese localization N897xA-AB1NFA series manual set – Korean localization N897xA-AB2NFA series manual set – Chinese localization N897xA-ABE NFA series manual set – Spanish localization N897xA-ABF NFA series manual set – French localization N897xA-ABZ NFA series manual set – Italian localization N897xA-ABD NFA series manual set – German localization N897xA-ABJ NFA series manual set – Japanese localization N897xA-0B0Delete hardcopy manual set*Note: The localized options will include a localized version of the Quick Reference Guide and User Guide, and an English language version of the Programmers Reference, and Calibration and Performance Verification Manual.Additional DocumentationN897xA-0B1NFA series manual set (English version)N897xA-0B2NFA series user manual (English version)N897xA-0BF NFA series programmers reference (English version)Service Options:Warranty and Service Standard warranty is 3 years. For warranty and service of 5 years, please order R-51B-001-5F: “3 year Return-to Agilent warranty extended to 5 years” (quantity = 1).Calibration 2For 3 years, order 36 months of the appropriate calibration plan shown below. For 5 years, specify 60 months.R-50C-001Standard calibration plan*R-50C-002Standard compliant calibration plan*Options not available in all countries。
Renesas Solution Starter Kit for RX23E-A 初始设置指南说明书
RSSKRX23E-ARenesas Solution Stater Kit for RX23E-A1. OverviewThe Renesas Solution Starter Kit for RX23E-A (RSSKRX23E-A) an evaluation tool for sensor measurement equipped with RX23E-A. Operation setting and A/D conversion value acquisition of RX23E-A can be done with the PC tool program which is provided separately.Figure 1-1Renesas Solution Starter Kit for RX23E-A2. Offering items(1) RSSKRX23E-A board RTK0ESXB10C00001BJ(2) RSSKRX23E-A User’s Manual R20UT4542EJ0100(3) RSSKRX23E-A PC Tool Program R20AN0540EJ0100(4) Quick Start Guide RSSKRX23E-A Renesas Solution Starter Kit for RX23E-A R20QS0007EJ0100(This document)Download the above (2) (3) (4) from Renesas Electronics web site.3. Configuration and Connection3.1 Major Terminals and JumpersFigure 3-1 Major terminals and jumpers on RSSKRX23E-A board3.2 Power supply configurationPower supply setting is “System Power Supply” as shipping default. USB Bus Power supply can be set easily. Refer to the “2.2 Selecting Power Supplies” in “RSSKRX23E-A User’s Manual” for detail on PowerSupply Setting.Figure 3-2 Power supply configurationCN3: Thermocouple connectorCN2: Signal input terminal CN5: Analog Power SupplyCN4: System Power SupplyCN6:USB-Serial connectorCN7: Emulator connectorSW2: Reset switchJP15:Analog power select jumperJP14:System power select jumperJP17:MCU mode select jumper CN1: Power output terminal3.3 System ConnectionSupply 5V dc power for RSSKRX23E-A board default setting. Not require an external power supply on USB power supply setting.Figure 3-3 System Connection4. Software4.1 PC tool programExecute “RSSKRX23EA.exe” in “RSSKRX23E-A PC tool program” package. Refer to application note in the package. About “connection” describes “2.2.1 Connection” in the application note, and A/D data collection starts “Run” button in WaveForm TAB.Figure 4-1 PC tool programRSSKRX23E-A EVBRX23E-AUSB-COM I/FEmulator I/FUSB I/FUART(3Mbps) USB 2.0FSPC Tool ProgramDC power supplySystem Power SupplyCN4Operation buttons4.2 RX23E-A firmwarePC tool program and RX23E-A firmware work in pair. The firmware is stored in RX23E-A at the shipment. When changing firmware for software development etc., re-write firmware “rsskrx23ea_fw.mot” whichincludes “RSSKRX23EA PC tool program” package using Renesas Flash Programmer (RFP) V3.06.00 or after. The Renesas Flash Programmer can be download from Renesas web site. Refer to the document of Renesas Flash Programmer in detail. The procedure is as follows:1. Stop power supply to RSSKRX23E-A board, then set JP17(MCU mode select jumper) to “USB” (2-3).2. Supply power to the board, then connect to PC by USB cable.3. Execute Renesas Flash Programmer, then connect from menu “File” > “New Project…” in reference toFigure 4-2. 4. Select “rsskrx23ea_fw.mot” file, then click “Start” after reset RSSKRX23E-A board.in reference to Figure4-3. 5. Close Renesas Flash Programmer after writing correctly, and stop power supply to RSSKRX23E-Aboard, then reset JP17(MCU mode select jumper) to “Emulator” (1-2).Figure 4-2 RFP “Create new project”Figure 4-3 RFP Writing OperationSelect “RX200” optional Select “COM” Select COM port to use “Connect” after setting aboveSelect “rsskrx23ea_fw.mot” Push “Start”Revision HistoryRev. Date DescriptionPage Summary1.00 Nov. 8, 19 1st editionGeneral Precautions in the Handling of Microprocessing Unit and Microcontroller Unit ProductsThe following usage notes are applicable to all Microprocessing unit and Microcontroller unit products from Renesas. For detailed usage notes on the products covered by this document, refer to the relevant sections of the document as well as any technical updates that have been issued for the products.1. Precaution against Electrostatic Discharge (ESD)A strong electrical field, when exposed to a CMOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Stepsmust be taken to stop the generation of static electricity as much as possible, and quickly dissipate it when it occurs. Environmental control must be adequate. When it is dry, a humidifier should be used. This is recommended to avoid using insulators that can easily build up static electricity.Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test andmeasurement tools including work benches and floors must be grounded. The operator must also be grounded using a wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions must be taken for printed circuit boards with mounted semiconductor devices.2. Processing at power-onThe state of the product is undefined at the time when power is supplied. The states of internal circuits in the LSI are indeterminate and the states of register settings and pins are undefined at the time when power is supplied. In a finished product where the reset signal is applied to the external reset pin, the states of pins are not guaranteed from the time when power is supplied until the reset process is completed. In a similar way, the states of pins in a product that is reset by an on-chip power-on reset function are not guaranteed from the time when power is supplied until the power reaches the level at which resetting is specified.3. Input of signal during power-off stateDo not input signals or an I/O pull-up power supply while the device is powered off. The current injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and the abnormal current that passes in the device at this time may cause degradation of internal elements. Follow the guideline for input signal during power-off state as described in your product documentation.4. Handling of unused pinsHandle unused pins in accordance with the directions given under handling of unused pins in the manual. The input pins of CMOS products are generally in the high-impedance state. In operation with an unused pin in the open-circuit state, extra electromagnetic noise is induced in the vicinity of the LSI, an associated shoot-through current flows internally, and malfunctions occur due to the false recognition of the pin state as an input signal become possible.5. Clock signalsAfter applying a reset, only release the reset line after the operating clock signal becomes stable. When switching the clock signal during program execution, wait until the target clock signal is stabilized. When the clock signal is generated with an external resonator or from an external oscillator during a reset, ensure that the reset line is only released after full stabilization of the clock signal. Additionally, when switching to a clock signal produced with an external resonator or by an external oscillator while program execution is in progress, wait until the target clock signal is stable.6. Voltage application waveform at input pinWaveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the CMOS device stays in the area between V IL (Max.) and V IH (Min.) due to noise, for example, the device may malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed, and also in the transition period when the input level passes through the area between V IL (Max.) and V IH (Min.).7. Prohibition of access to reserved addressesAccess to reserved addresses is prohibited. The reserved addresses are provided for possible future expansion of functions. Do not access these addresses as the correct operation of the LSI is not guaranteed.8. Differences between productsBefore changing from one product to another, for example to a product with a different part number, confirm that the change will not lead to problems.The characteristics of a microprocessing unit or microcontroller unit products in the same group but having a different part number might differ in terms of internal memory capacity, layout pattern, and other factors, which can affect the ranges of electrical characteristics, such as characteristic values, operating margins, immunity to noise, and amount of radiated noise. When changing to a product with a different part number, implement a system-evaluation test for the given product.Notice1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor productsand application examples. You are fully responsible for the incorporation or any other use of the circuits, software, and information in the design of your product or system. Renesas Electronics disclaims any and all liability for any losses and damages incurred by you or third parties arising from the use of these circuits, software, or information.2. Renesas Electronics hereby expressly disclaims any warranties against and liability for infringement or any other claims involving patents, copyrights,or other intellectual property rights of third parties, by or arising from the use of Renesas Electronics products or technical information described in this document, including but not limited to, the product data, drawings, charts, programs, algorithms, and application examples.3. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronicsor others.4. You shall not alter, modify, copy, or reverse engineer any Renesas Electronics product, whether in whole or in part. Renesas Electronics disclaims anyand all liability for any losses or damages incurred by you or third parties arising from such alteration, modification, copying or reverse engineering.5. Renesas Electronics products are classified according to the following two quality grades: “Standard” and “High Quality”. The intended applications foreach Renesas Electronics product depends on the product’s quality grade, as indicated below."Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; industrial robots; etc."High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control (traffic lights); large-scale communication equipment; key financial terminal systems; safety control equipment; etc.Unless expressly designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not intended or authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems; surgical implantations; etc.), or may cause serious property damage (space system; undersea repeaters; nuclear power control systems; aircraft control systems; key plant systems; military equipment; etc.). Renesas Electronics disclaims any and all liability for any damages or losses incurred by you or any third parties arising from the use of any Renesas Electronics product that is inconsistent with any Renesas Electronics data sheet, user’s manual or other Renesas Electronics document.6. When using Renesas Electronics products, refer to the latest product information (data sheets, user’s manuals, application notes, “General Notes forHandling and Using Semiconductor Devices” in the reliability handbook, etc.), and ensure that usage conditions are within the ranges specified by Renesas Electronics with respect to maximum ratings, operating power supply voltage range, heat dissipation characteristics, installation, etc. Renesas Electronics disclaims any and all liability for any malfunctions, failure or accident arising out of the use of Renesas Electronics products outside of such specified ranges.7. Although Renesas Electronics endeavors to improve the quality and reliability of Renesas Electronics products, semiconductor products have specificcharacteristics, such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Unless designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not subject to radiation resistance design. You are responsible for implementing safety measures to guard against the possibility of bodily injury, injury or damage caused by fire, and/or danger to the public in the event of a failure or malfunction of Renesas Electronics products, such as safety design for hardware and software, including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult and impractical, you are responsible for evaluating the safety of the final products or systems manufactured by you.8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each RenesasElectronics product. You are responsible for carefully and sufficiently investigating applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive, and using Renesas Electronics products in compliance with all these applicable laws and regulations. Renesas Electronics disclaims any and all liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.9. Renesas Electronics products and technologies shall not be used for or incorporated into any products or systems whose manufacture, use, or sale isprohibited under any applicable domestic or foreign laws or regulations. You shall comply with any applicable export control laws and regulations promulgated and administered by the governments of any countries asserting jurisdiction over the parties or transactions.10. It is the responsibility of the buyer or distributor of Renesas Electronics products, or any other party who distributes, disposes of, or otherwise sells ortransfers the product to a third party, to notify such third party in advance of the contents and conditions set forth in this document.11. This document shall not be reprinted, reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or RenesasElectronics products.(Note1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its directly or indirectly controlled subsidiaries.(Note2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.(Rev.4.0-1 November 2017) Corporate Headquarters Contact informationTOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan For further information on a product, technology, the most up-to-date version of a document, or your nearest sales office, please visit: /contact/.TrademarksRenesas and the Renesas logo are trademarks of Renesas Electronics Corporation. All trademarks and registered trademarks are the property of their respective owners.。
ADRF5515A Dual-Channel, 3.3 GHz to 4.0 GHz, 20 W R
Data SheetADRF5515ADual-Channel, 3.3 GHz to 4.0 GHz, 20 W Receiver Front End FEATURES►Integrated dual-channel RF front end►2-stage LNA and high power silicon SPDT switch►On-chip bias and matching►Single-supply operation►High power handling at T CASE = 105°C►LTE average power (9 dB PAR) full lifetime: 43 dBm►Gain►High gain mode: 36 dB typical at 3.6 GHz►Low gain mode: 17 dB typical at 3.6 GHz►Low noise figure►High gain mode: 1.05 dB typical at 3.6 GHz►Low gain mode: 1.05 dB typical at 3.6 GHz►High isolation►RXOUT-CHA and RXOUT-CHB: 47 dB typical►TERM-CHA and TERM-CHB: 75 dB typical►Low insertion loss: 0.5 dB typical at 3.6 GHz►High OIP3: 35 dBm typical►Power-down mode and low gain mode►Low supply current►High gain mode: 95 mA typical at 5 V►Low gain mode: 48 mA typical at 5 V►Power-down mode: 13 mA typical at 5 V►Positive logic control►6 mm × 6 mm, 40-lead LFCSP package►Pin compatible with the ADRF5515 and the ADRF5519, and the 10 W versions, ADRF5545A and ADRF5549APPLICATIONS►Wireless infrastructure►TDD massive multiple input and multiple output and active antenna systems►TDD-based communication systemsFUNCTIONAL BLOCK DIAGRAMFigure 1.GENERAL DESCRIPTIONThe ADRF5515A is a dual-channel, integrated RF, front-end, mul-tichip module designed for time division duplexing (TDD) appli-cations. The device operates from 3.3 GHz to 4.0 GHz. The ADRF5515A is configured in dual channels with a cascading,two-stage low noise amplifier (LNA) and a high-power silicon single-pole, double-throw (SPDT) switch.In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure of 1.05 dB and a high gain of 36 dB at 3.6 GHz, with an output third-order intercept (OIP3) point of 35 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 17 dB of gain at a lower current of 48 mA. In power-down mode, the LNAs are turned off and the device draws 13 mA.In transmit operation, when RF inputs are connected to a termi-nation pin (TERM-CHA or TERM-CHB), the switch provides low insertion loss of 0.5 dB and handles long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 43 dBm for full lifetime operation.The device comes in an RoHS-compliant, compact, 6 mm × 6 mm, 40-lead lead frame chip scale package (LFCSP).TABLE OF CONTENTSFeatures (1)Applications (1)Functional Block Diagram (1)General Description (1)Specifications (3)Electrical Specifications (3)Absolute Maximum Ratings (5)Thermal Resistance (5)Electrostatic Discharge (ESD) Ratings (5)ESD Caution (5)Pin Configuration and Function Descriptions (6)Interface Schematics..........................................7Typical Performance Characteristics (8)Receive Operation, High Gain Mode (8)Receive Operation, Low Gain Mode (10)Transmit Operation (12)Theory of Operation (13)Signal Path Select (13)Biasing Sequence (13)Applications Information (14)Outline Dimensions (15)Ordering Guide (15)Evaluation Boards (15)REVISION HISTORY6/2021—Revision 0: Initial VersionELECTRICAL SPECIFICATIONSVDD1-CHA, VDD1-CHB, VDD2-CHA, VDD2-CHB, and SWVDD-CHAB = 5 V, SWCTRL-CHAB = 0 V or SWVDD-CHAB, BP-CHA = VDD1-CHA or 0 V, BP-CHB = VDD1-CHB or 0 V, PD-CHAB = 0 V or VDD1-CHA, case temperature (T CASE) = 25°C, and a 50 Ω system, unless otherwise noted.Table 1.Parameter Test Conditions/Comments Min Typ Max Unit FREQUENCY RANGE 3.3 4.0GHz GAIN1Receive operation at 3.6 GHzHigh Gain Mode36dB Low Gain Mode17dB GAIN FLATNESS1Receive operation in any 100 MHz bandwidthHigh Gain Mode0.6dB Low Gain Mode0.2dB NOISE FIGURE (NF)1Receive operation at 3.6 GHzHigh Gain Mode 1.05dB Low Gain Mode 1.05dB OUTPUT THIRD-ORDER INTERCEPT POINT (OIP3)135dBm High Gain Mode Receive operation, two-tone output power = 11 dBm per tone at1 MHz tone spacing23.5dBm Low Gain Mode Receive operation, two-tone output power = -10 dBm per tone at1 MHz tone spacingOUTPUT 1 dB COMPRESSION (OP1dB)High Gain Mode19dBm Low Gain Mode12.5dBm INSERTION LOSS1Transmit operation at 3.6 GHz0.5dB CHANNEL TO CHANNEL ISOLATION1At 3.6 GHzBetween RXOUT-CHA and RXOUT-CHB Receive operation47dB Between TERM-CHA and TERM-CHB Transmit operation75dB SWITCH ISOLATIONANT-CHA to TERM-CHA andReceive operation15dB ANT-CHB to TERM-CHB1SWITCHING CHARACTERISTICS (t ON, t OFF)50% control voltage to 90%, 10% of RXOUT-CHA or RXOUT-600nsCHB in receive operation600ns50% control voltage to 90%, 10% of TERM-CHA or TERM‑CHBin transmit operationDIGITAL INPUTSWCTRL-CHAB, PD-CHAB, BP-CHA, BP-CHBLow (V IL)00.63V High (V IH) 1.17V DD V SUPPLY CURRENT (I DD)VDD1-CHx and VDD2-CHx = 5 V per channelHigh Gain95mA Low Gain48mA Power-Down Mode13mA Transmit Current (Switch)SWVDD-CHAB = 5 V 1.4mA DIGITAL INPUT CURRENTS SWCTRL-CHAB, PD-CHAB, BP-CHA, BP-CHB = 5 V perchannelSWCTRL-CHAB0.075mA PD-CHAB0.3mABP-CHA, BP-CHB0.15mATable 1.Parameter Test Conditions/Comments Min Typ Max Unit RECOMMENDED OPERATING CONDITIONS4.7555.25V Supply Voltage (V DD) Range VDD1-CHA, VDD1-CHB, VDD2-CHA, VDD2-CHB,SWVDD‑CHABControl Voltage Range SWCTRL-CHAB, BP-CHA, BP-CHB, PD-CHAB0V DD V RF Input Power at ANT-CHA, ANT‑CHB SWCTRL-CHAB = 5 V, PD-CHAB = 5 V, BP-CHA = BP-CHB = 0V, T CASE2 = 105°CContinuous wave43dBm9 dB PAR LTE full lifetime average43dBm7 dB PAR LTE single event (<10 sec) average346dBm Case Temperature Range (T CASE) 2−40+105°C Junction Temperature at Maximum T CASE2Receive operation1132°CTransmit operation1134°C 1See Table 6 and Table 7.2Measured at EPAD.3PAR > 7 dB has not been validated due to measurement setup limited to a maximum RF power of 53 dBm.ABSOLUTE MAXIMUM RATINGSTable 2.Parameter RatingPositive Supply VoltageVDD1-CHA, VDD1-CHB, VDD2-CHA,VDD2-CHB7 VSWVDD-CHAB 5.4 VDigital Control Input VoltageSWCTRL-CHAB−0.3 V to V DD1 + 0.3 VBP-CHA, BP-CHB, PD-CHAB−0.3 V to V DD2 + 0.3 V Digital Control Input CurrentSWCTRL-CHAB, BP-CHA, BP-CHB, PD-CHAB20 mARF Input PowerTransmit Input Power (LTE Peak, 9 dB PAR)53 dBmReceive Input Power (LTE Peak, 9 dB PAR)25 dBmTemperatureStorage−65°C to +150°CReflow (Moisture Sensitivity Level 3 (MSL3)Rating)260°C1V DD is the voltage of the SWVDD-CHAB pin.2V DD is the voltage of the VDD1-CHA, VDD1-CHB, VDD2-CHA, and VDD2-CHB pins.Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operat-ing conditions for extended periods may affect product reliability.THERMAL RESISTANCEThermal performance is directly linked to printed circuit board (PCB) design and operation environment. Careful attention to PCB thermal design is required.θJC is the junction to case bottom (channel to package bottom) thermal resistance.Table 3. Thermal ResistancePackage TypeθJC UnitCP-40-15High Gain Mode, Receive Operation25°C/WLow Gain Mode, Receive Operation36°C/WPower-Down Mode, Transmit Operation6°C/W ELECTROSTATIC DISCHARGE (ESD) RATINGS The following ESD information is provided for handling of ESD-sen-sitive devices in an ESD protected area only.Human body model (HBM) per ANSI/ESDA/JEDEC JS-001. Charged device model (CDM) per ANSI/ESDA/JEDEC JS-002. Table 4. ADRF5515A, 40-Lead LFCSPESD Model Withstand Threshold (V)Class HBM10001C CDM750C2 ESD CAUTIONFigure 2. Pin ConfigurationTable 5. Pin Function DescriptionsPin No.Mnemonic DescriptionGND Ground.1, 2, 4, 7, 9 to 11, 15, 16, 21, 23, 28, 30, 35,36, 403ANT-CHA RF Input to Channel A.5SWCTRL‑CHAB Control Voltage for Switches on Channel A and Channel B.6SWVDD‑CHAB Supply Voltage for Switches on Channel A and Channel B.8ANT-CHB RF Input to Channel B.12TERM-CHB Termination Output. This pin is the transmitter path for Channel B.13, 14, 18, 19, 25, 32, 33, 37, 38NIC Not Internally Connected. It is recommended to connect NIC to the RF ground of the PCB.17VDD1-CHB Supply Voltage for Stage 1 LNA on Channel B.20VDD2-CHB Supply Voltage for Stage 2 LNA on Channel B.22RXOUT-CHB RF Output. This pin is the receiver path for Channel B. The RXOUT-CHB pin is ac-matched to 50 Ω. Nomatching component is required. A dc blocking capacitor is required.24BP-CHB Bypass Second Stage LNA of Channel B.26PD-CHAB Power Down All Stages of LNA for Channel A and Channel B.27BP-CHA Bypass Second Stage LNA of Channel A.29RXOUT-CHA RF Output. This pin is the receiver path for Channel A. The RXOUT-CHA pin is ac matched to 50 Ω. Nomatching component is required. A dc blocking capacitor is required.31VDD2-CHA Supply Voltage for Stage 2 LNA on Channel A.34VDD1-CHA Supply Voltage for Stage 1 LNA on Channel A.39TERM-CHA Termination Output. This pin is the transmitter path for Channel A.EPAD Exposed Pad. The exposed pad must be connected to RF or dc ground.INTERFACE SCHEMATICSFigure 3. GND InterfaceFigure 4. RXOUT-CHx InterfaceFigure 5. VDD1-CHx, VDD2-CHx InterfaceFigure 6. PD-CHAB, BP-CHx InterfaceFigure 7. SWCTRL‑CHAB, SWVDD-CHAB InterfaceRECEIVE OPERATION, HIGH GAIN MODEFigure 8. Gain vs. Frequency at Various TemperaturesFigure 9. Return Loss vs. FrequencyFigure 10. Noise Figure vs. FrequencyFigure 11. Gain vs. Frequency at Various Temperatures, 3.3 GHz to 4.0 GHzFigure 12. Channel to Channel Isolation vs. FrequencyFigure 13. Output P1dB vs. FrequencyFigure 14. Output IP3 vs. Output Power, 3.6 GHz Figure 15. Output IP3 vs. Frequency, 11 dBm Output Tone PowerRECEIVE OPERATION, LOW GAIN MODEFigure 16. Gain vs. Frequency at Various TemperaturesFigure 17. Return Loss vs. FrequencyFigure 18. Gain vs. Frequency at Various Temperatures, 3.3 GHz to 4.0 GHzFigure 19. Channel to Channel Isolation vs. FrequencyFigure 20. Noise Figure vs. Frequency at Various TemperaturesFigure 21. Output IP3 vs. Frequency at −10 dBm Output Tone PowerFigure 22. Output P1dB vs. FrequencyTRANSMIT OPERATIONFigure 23. Insertion Loss vs. Frequency at Various TemperaturesFigure 24. Return Loss vs. FrequencyFigure 25. TERM-CHA to TERM-CHB Isolation vs. FrequencyFigure 26. Antenna to Termination Isolation vs. Frequency, LNA OnTHEORY OF OPERATIONThe ADRF5515A requires a positive supply voltage applied to the VDD1-CHA pin, VDD2-CHA pin, VDD1-CHB pin, VDD2-CHB pin, and SWVDD-CHAB pin. Use bypassing capacitors on the supply lines to filter noise.SIGNAL PATH SELECTThe ADRF5515A supports transmit operations when 5 V is applied to SWCTRL-CHAB. In transmit operation, when an RF input is applied to ANT-CHA and ANT-CHB, the signal paths are connected from ANT-CHA to TERM-CHA and from ANT‑CHB to TERM-CHB. The ADRF5515A supports receive operations when 0 V is applied to SWCTRL-CHAB. In receive operation, an RF input applied at ANT-CHA and ANT-CHB connects ANT-CHA to RXOUT-CHA and ANT-CHB to RXOUT-CHB.Receive OperationThe ADRF5515A supports high gain mode, low gain mode, power-down high isolation mode, and power-down low isolation mode in receive operation, as detailed in Table 7.When 0 V is applied to PD-CHAB, the LNA is powered up and the user can select high gain mode or low gain mode. To select high gain mode, apply 0 V to BP-CHA or BP-CHB. To select low gain mode, apply 5 V to BP-CHA or BP-CHB.When 5 V is applied to PD-CHAB, the ADRF5515A enters power-down mode. To select power-down high isolation mode, apply 0 V to BP-CHA or BP-CHB. To select power-down low isolation mode, apply 5 V to BP-CHA or BP-CHB.BIASING SEQUENCETo bias up the ADRF5515A, perform the following steps:1.Connect any GND pin to ground.2.Bias up VDD1-CHA, VDD2-CHA, VDD1-CHB, VDD2-CHB, andSWVDD-CHAB.3.Bias up SWCTRL-CHAB.4.Bias up PD-CHAB.5.Bias up BP-CHA and BP-CHB.6.Apply an RF input signal.To bias down, perform these steps in the reverse order.Table 6. Truth Table: Signal PathSWCTRL-CHABSignal Path SelectTransmit Operation1Receive OperationLow Off OnHigh On Off1See the signal path descriptions in Table 7.Table 7. Truth Table: Receive Operation, SWCTRL-CHAB = 0 VOperation PD-CHAB BP-CHA, BP-CHB Signal PathReceive Operation ANT-CHA to RXOUT-CHA, ANT-CHB to RXOUT-CHB High Gain Mode Low LowLow Gain Mode Low HighPower-Down High Isolation Mode High LowPower-Down Low Isolation Mode High HighAPPLICATIONS INFORMATIONTo generate the evaluation PCB used in a typical application circuit, use proper RF circuit design techniques. Signal lines at the RF port must have a 50 Ω impedance, and the package ground leads and the backside ground slug must connect directly to the ground plane. Use 300 Ω series resistors on the BP-CHx and PD-CHAB digital control pins for glitch and overcurrent protection.It is possible to tune the ADRF5515A to obtain better return loss between 3.3 GHz to 3.8 GHz or 3.7 GHz to 4.2 GHz frequency bands. An additional low impedance RF trace at the TERM-CHx pin and a shunt capacitor at the ANT-CHx pin allows better return loss for receive high gain mode, receive low gain mode and transmit mode at the same time. It is possible to switch frequency bands by adding/removing the shunt capacitor at the ANT-CHx pin. When the shunt capacitor at the ANT-CHx pin is mounted, the device is tuned to the 3.3 GHz to 3.8 GHz frequency band (low band). When the capacitor is not mounted, the device is tuned to the 3.7 GHz to 4.2GHz frequency band (high band).Figure 27. External Matching TopologyThe details of the external tuning network can be found in Table8 and Figure 27. RF trace characteristic impedance and electrical length can be applied to any different substrate of choice. Also in Table 8, dimensions for an example grounded coplanar waveguide implementation with 10 mil Rogers 4350 is shown.Table 8. Matching ComponentsMatching Components ANT-CHx Pin TERM-CHx PinSeries RF Trace Z0 = 50 ΩZ0 = 40 ΩE0 =λ/20 at 3.6 GHz E0 =λ/4 at 3.6 GHzWidth = 18 mil Width = 26 milGap = 13 mil Gap = 13 milLength = 100 mil Length = 500 mil Shunt Capacitor Capacitor = 0.3 pF Not applicableLow band tuningCapacitor = do notinsert (DNI)High band tuning Simulated return losses for receive high gain mode, receive low gain mode, and transmit mode are seen in Figure 28 and Figure 29. For high gain mode, the return loss is better than 15 dB, and for low gain mode, the return loss is better than 14 dB. For transmit mode,the return loss is better than 18 dB.Figure 28. ANT-CHx Return Loss at Receive High Gain and Receive Low GainMode for Low Band and High Band TuningFigure 29. ANT-CHx and TERM-CHx Return Loss at Transmit Mode Comparedwith and Without External TuningOUTLINE DIMENSIONSFigure 30. 40-Lead Lead Frame Chip Scale Package [LFCSP]6 mm × 6 mm Body and 0.95 mm Package Height(CP-40-15)Dimensions shown in millimetersUpdated: April 09, 2021 ORDERING GUIDEModel1Temperature Range Package Description Packing Quantity Package OptionADRF5515ABCPZN−40°C to +105°C40-Lead LFCSP (6mm × 6mm w/ EP)Reel, 0CP-40-15 ADRF5515ABCPZN-R7−40°C to +105°C40-Lead LFCSP (6mm × 6mm w/ EP)Reel, 750CP-40-15 ADRF5515ABCPZN-RL−40°C to +105°C40-Lead LFCSP (6mm × 6mm w/ EP)Reel, 2500CP-40-151Z = RoHS Compliant PartEVALUATION BOARDSModel DescriptionADRF5515A-EVALZ ADRF5515A Evaluation Board。
CA3028AM资料
VCC = 12V, VEE = -12V
IIO VCC = 6V, VEE = -6V
VCC = 12V, VEE = -12V
II
VCC = 6V, VEE = -6V
VCC = 12V, VEE = -12V
VCC = 9V
VCC = 12V
CA3028A
CA3028B
CA3053
MIN TYP MAX MIN TYP MAX MIN TYP MAX UNIT
The CA3028B is like the CA3028A but is capable of premium performance particularly in critical DC and differential amplifier applications requiring tight controls for input offset voltage, input offset current, and input bias current.
5
(Note 5)
6
Note 3 Note 3
7
Note 3
8
NOTES: 2. Terminal No. 3 is connected to the substrate and case. 3. Voltages are not normally applied between these terminals. Voltages appearing between these terminals will be safe, if the specified voltage limits between all other terminals are not exceeded. 4. Limit is -12V for CA3053. 5. Limit is +15V for CA3053. 6. Limit is +12V for CA3053. 7. Limit is +24V for CA3028A and +18V for CA3053.
USRP母版和子板性能
主要销售的母板有：RP1-PKGUSRP1是一个完整的RF收发系统，仅仅添加上天线，你就可以在许多知名频段实现双向、高带宽的通信。
该板有许多特性使之可以方便的集成到更复杂的系统中比如数字控制线，以及可分开发送和接收端口的选项等。
主要特征如下：∙30 MHz收发带宽全同步设计支持MIMO∙所有功能可由软件或FPGA控制∙接收机和发射机的独立本地振荡器LO∙小于200微秒锁相环锁定时间，可用于跳频PLL（Phase Lock Loop，锁相环）∙内置收/发开关∙发射机和接收机使用同一连接器或使用辅助接收机端口∙16个数字I / O线来控制外部设备比如天线开关等∙内置的模拟RSSI（Received Signal Strength Indication接收信号强度指示）测量∙70分贝的AGC范围∙可调发射功率∙支持全双工功能（有某些限制）RP E100∙ADCs: 12-位 64 MS/s∙DACs: 14-位 128 MS/s∙720 MHz OMAP3 (ARM Cortex A8 处理器 & TI C64x+ DSP)∙针对嵌入式应用的设计。
运行于 Linux 系统上。
∙512MB RAM∙4GB microSD 插卡∙100 M 以太网连接∙可编程抽取率和下变频和可编程内插速率和上变频∙Motherboard has one RTX daughterboard slot (1 RX + 1 TX connectors) ∙板上 FPGA 处理 - Onboard FPGA processing∙TCXO 时钟参考RP2-PKGUSRP2基于USRP的成功经验，以非常低的价格提供更高的性能和更大的灵活性。
更高速度和更高的精度ADC和DAC在允许使用更宽波段的信号，增加了信号的动态范围。
针对DSP应用优化了的大型现场可编程门阵列（FPGA ）可以在高采样率下处理复杂波形。
千兆以太网接口，使应用程序可以使用USRP2同时发送或接受50 MHz的射频带宽。
网优文档164：LTE 无线链路覆盖估算方法
2.2 链路预算流程
链路预算总体流程如图 2-1 所示。 图 2-1 链路预算流程图
具体计算过程如下： 1. 确定被预算的速率 x kbps； 2. 确定边缘用户 RB 数目 n RB； 3. 根据子帧配比计算上下行控制信道开销； 4. 计算每个 RB 承载的 bit 数； 5. 根据每个 RB 承载的 bit 数查找 “Link Result” 表， 确定对应的 MCS 等级和 Required SINR； 注 1： 从上面的过程可见，用户速率 （x kbps） 、用户资源 （n RB） 和最后的 Required SINR 三者之间是相互依存的。必须固定下其中 2 个才能计算出第三个。显然用户速率是可以固 定下来，对于链路预算，则要么固定 RB 数目，要么固定 SINR。由于 LTE 是动态条件资源 自适应环境，因此固定 SINR 不现实也不合理，因此采用固定 RB 数目的方式，但是 RB 数 的分配与用户速率、调度方法、覆盖场景等相关。
根据 MCS 等级对应获得，可以为 QPSK、16QAM、64QAM。 注 1：通常链路预算计算的为边缘覆盖情况，一般应该为较低的调制方式 QPSK.
2.3.11
传输块大小（TBSize）
TBSize 大小要满足 TBSize(bps)*子帧配比因子/1ms>Data Rate(kbps)。 其中： 子帧配比因子是指下（上）行时隙数占总时隙的比例，根据 TD-子帧配置获得 2.3.12 下行单天线发射功率（Tx power per Antenna）
TDD,2*2,SFBC,SE 1.36 1.34 1.32 1.3 1.28 1.26 1.24 1.22 1.2 36 40 43 TxPower 46 49
SE
图 2-3
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
16
Thanks ！！
17
2. The noise figure is simply the noise factor expressed in decibels (dB).
4
DEFINITION
5
Defini) * N (out) N (out) Na GN (in) S / N (out) GS (in) * N (in) GN (in) GN (in)
RX Noise Figure STUDY
1
OUTLINE
Block diagram Noise figure
Definition NF calculate Noise source
2
Block diagram
Antenna A
Block diagram of 2 branch of RX chain
Na GN (in) ) GN (in) 10 log10 ( Na GN (in)) 10 log10 (GN (in)) NF 10 log10 (
6
Methods of Noise Figure Measuring
Y factor measuring method
Gain measurement method Two times the power method Direct measuring method
7
Y factor measuring method
•
目前实际工程和研究中最常用的噪声系数测量方法是Y 因子法,各 种 噪声系数分析仪也都普遍使用Y 因子法进行噪声系数测量。噪声源 是Y 因子法测量必不可少的设备, 噪声源是能产生两种不同噪声功率 的噪声发生器。 通常需DC 脉冲电源驱动电压, 如常用的HP346A/ B/ C 系列噪声源需 要 +28VDC, 当+28V 供电时, 相当于噪声源开, 称为热态, 此时输出大的 噪声功率; 电源关闭时, 相当于噪声源关,称为冷态, 此时输出常温下的 噪声功率。 •Y因子方法 •–通过测量噪声源在两个不同等效输入噪声温度情况下，被测网络的 输出噪声功率来确定低噪声电路的噪声系数的方法被称为Y因子方法
13
Gain measurement method
14
Noise figure_ Test setup
› Test setup: Noise figure test setup with noise source for RX A/B
I/O to Data 1/2
duplexer
15
噪声系数测试的误差源
PAB TRXB
LNA1 T/R SW Limiter
TX A
FU
RF filter LNA2 optional
RF VGA
I
LNA1 T/R SW Limiter
RF VGA
I
TRXB
RF AGC
RF mixer
RF filter
00 180
IF ASIC
IF filter IF VGA IF AGC
8
Noise source
产生噪声的装置，是指能够获得高频噪声的部件 常用的噪声源组成: 雪崩二极管 匹配网络
注：商用噪声源用ENR来描述性能指标
9
Noise figure calculation
超噪比ENR（Excess Noise Ratio）
噪声源超过标准噪声温度T0热噪声的倍数，即
IF filter
ADC
16 ADC
I I
2bit 6dB step attenuator
UL digital
00 180
16 ADC
6bit step attenuator
1bit step attenuator
ADC clock
RF LO
3
Noise figure_ Definition
• Definition: • Noise factor (F) and Noise figure (NF) 1. The noise factor s defined as the ratio of input SNR to output SNR.
T T0 ENR T0
T T0 ENR(dB) 10lg T0
T为噪声源开时的噪声温度，T0为标准噪声温度290K
10
Noise figure calculation
11
Noise figure calculation
12
Noise figure calculation