集成光波导微环谐振腔的电光调制特性研究

中北大学学位论文 nano-waveguide resonator is designed and fabricated, then this structure is optimized and the bending loss of resonator with the radius of 15 μ m is tested, the optimized loss value is 0.0109 ± 0.0001dB / turn , Q factor can still remain above 104. In this way, the demand of basic parameters of the research on resonant response and the fabrication of resonators can be achieved. Afterwards, the characteristics of diode and the realization of P-N junction by ion implantation is simulated, analyzed and calculated by Sentaurus and SRIM2008, and finally we defined the detailed data parameters. Finally we use standard MEMS process like ICP etching, electron-beam lithography and ion implantation to fabricate electro-optical modulator chip based on SOI micro-ring resonator. The result of static and transient modulating characteristic of micro-ring electro-optical modulator with the scope of free wave 2.6nm when an outside drive voltage signal is applied is: static test produces resonant frequency shift and the resonant frequency is increased with the increase of drive voltage signal, when the drive voltage crest value reached certain degree, P-N junction is broken down.By conducting transient characteristic test, it is obtained that the modulation depth is 0.899,the extinction ratio is 10.14dB and the maximum modulation frequency is 30MHz.
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中北大学学位论文
集成光波导微环谐振腔的电光调制特性研究 摘 要
随着集成光学的快速发展，硅基片上 SOI 器件的现代 SoC（System on Chip）系统芯 片技术成为了未来光通信与光集成发展的主流方向。由于 SoC 片上系统器件在光处理、 光计算、光传输和光控制等各种光学物理特性上应用的独特优势，成为了国内外学术界 广泛研究的热点。而目前制约其发展的主要瓶颈问题就是集成性。而高品质的硅基 SOI( Silicon-on-insulator) 材料,由于其材料层间较高的折射率差、 通信波段的透明传输以 及制作工艺与 CMOS 工艺完全兼容等优点以至于可很大程度上降低芯片器件尺寸和提 高芯片的集成密度来实现芯片内的光电互联和光电集成， 从而成为目前 SoC 片上芯片集 成中分立部件制备的首选。SOI 硅基光波导谐振腔作为集成光学的主要部件，其主要可 用于滤波、光开关、调制器、探测器等，而随着半导体物理学、量子力学等对硅材料半 导体电光效应的进一步解释， 研究 SOI 波导谐振腔的电光调制器成为了追捧的热点和难 点问题。 利用硅电光效应制备的 SOI 微环谐振腔光调制器主要是通过硅材料光电效应产 生波导折射率的改变，从而实现光信号的调制或切换，其克服了热光效应型调制器受热 扩散和散热的限制，突破了与声光型器件相同特征的响应速度较慢等问题，具有超高速 调制的优势，成为制作高速光调制器和光开关的首选方案。所以，研究基于 SOI 波导谐 振腔的电光特性调制器件成为现代 SoC 芯片器件实现的基础。 本文主要立足于以 SOI 光波导微环谐振腔电光调制器为目标， 采用 FDTD 以及 Rsoft 对波导的单模性、高光局域性以及谐振特性进行了仿真分析，在此基础上设计、制备出 了条形和脊型纳米光波导谐振腔， 然后对制备的结构进行了优化后处理， 并对半径 15 μ m 的波导谐振腔进行了弯曲损耗测试，其优化后的损耗值为 0.0109 ± 0.0001dB / turn ，Q 值 仍可保持在在 104 以上，从而可满足研究调制特性与制备调制器件的谐振腔基本参数要 求。然后通过 Sentaurus、SRIM2008 对二极管特性以及离子注入形成 P-N 结的实现进行 了仿真、分析与计算，最终确定其详细的数据参数等。最后以分析的结果采用标准的
With the rapid development of integrated optics, modern SoC (System on Chip) technology based on SOI devices has become the main stream of future optical communication and integration. Because of the unique advantage of SoC devices on optical process, optical calculation, optical transmission and optical control, it has become the research hot topic in recent academic world both home and abroad. However, the main bottleneck restricting the development of SoC is the integration problem. And since high-quality SOI materials have high difference of refractive index, transparent transmission of communication channel and fully compatibility with CMOS fabrication process, it can reduce the chip sizes and increase chip integration density in great degree to realize the connection and integration for photo electronics. So SOI material becomes the first choice for the fabrication of discrete devices in SoC integration. SOI micro-ring resonator, as the main part of integrated optics, can be applied to filtering, optical switch, modulator, detector, etc. As further explanation of silicon photoelectric effect due to semiconductor physics theory and quantum mechanics, the research on SOI micro-ring resonant electro optical modulator becomes the focus and difficult issue recently. SOI micro-ring modulator based on silicon photoelectric effect realizes the modulation and shiftiness of optical signal by the change of waveguide refractive index. It becomes the best solution in making high-speed optical modulator and optical switch because it overcomes the limitation of thermal diffusion and radiation when thermo-optic effect modulator is heated, break through the problem of low respond speed compared with acuosto-optic devices and have high modulation speed. Therefore, research on electro-optical modulators based on SOI micro-ring waveguide is the basis of the realization of modern SoC devices. In this paper, we aimed at electro-optical modulators based on SOI micro-ring waveguide, simulated and analyzed the single-mode property, highlight locality and resonant response of waveguide by FDTD and Rsoft. Based on these results, striped and ridged