AON4703中文资料

Symbol Units R θJL R θJL
130Maximum Junction-to-Lead
C
Steady-State 40
50
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
t ≤ 10s R θJA 6680°C/W
Maximum Junction-to-Ambient
A
Steady-State 9575°C/W
Maximum Junction-to-Ambient
A
Steady-State 88110Maximum Junction-to-Lead
C
Steady-State 2835Maximum Junction-to-Ambient
A
t ≤ 10s R θJA 51Parameter: Thermal Characteristics MOSFET
Typ Max AON4703
DFN3X2-8L
AON4703
Symbol
Min Typ
Max
Units BV DSS -20
V -1T J =55°C
-5I GSS ±100nA V GS(th)-0.3-0.63
-1
V I D(ON)
-15
A 7390T J =125°C
11013599120m Ω133160
m Ωg FS 4
7S V SD -0.83
-1V I S
-2
A C iss 540
pF C oss 72pF C rss 49pF R g
12ΩQ g 6.1
nC Q gs 0.6nC Q gd 1.6nC t D(on)10
ns t r 12ns t D(off)44ns t f 22ns t rr
21ns Q rr 7.5nC SCHOTTKY PARAMETERS V F 0.39
0.5V 0.120
C T 34pF t rr 5.210ns Q rr
0.8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate resistance
V GS =0V, V DS =0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS I F =-3.4A, dI/dt=100A/µs
V GS =0V, V DS =-10V, f=1MHz SWITCHING PARAMETERS Total Gate Charge V GS =-4.5V, V DS =-10V, I D =-3.4A
Gate Source Charge Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime V GS =-4.5V, V DS =-10V, R L =2.9Ω, R GEN =3Ω
m ΩV GS =-2.5V, I D =-2.5A I S =-1A,V GS =0V
V DS =-5V, I D =-3.4A
R DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage I DSS µA Gate Threshold Voltage V DS =V GS I D =-250µA V DS =-16V, V GS =0V
V DS =0V, V GS =±8V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I F =-3.4A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current
I D =-250µA, V GS =0V V GS =-1.8V, I D =-1.5A
V GS =-4.5V, V DS =-5V V GS =-4.5V, I D =-3.4A
Reverse Transfer Capacitance Forward Voltage Drop I F =0.5A I rm Maximum reverse leakage current V R =16V
mA V R =16V, T J =125°C Junction Capacitance
V R =10V
SchottkyReverse Recovery Time I F =1A, dI/dt=100A/µs Schottky Reverse Recovery Charge
I F =1A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev 0. June 2006
AON4703
AON4703
AON4703。