STW47NM60中文资料

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常用金属材料手册

常见金属材料基础知识（简要读本 ― ― 仅供内部使用）（ 2008 VER.） -1-
4.热轧 H 型钢........................................................................................................ 35 5.冷弯型钢............................................................................................................ 35 第六节管材知识.......................................................................................................... 36 1.管材的分类......................................................................................................... 36 2.无缝钢管............................................................................................................ 36 3.焊接钢管............................................................................................................ 37 第七节不锈钢知识...................................................................................................... 37 1.不锈钢热轧钢..................................................................................................... 37 2.不锈钢冷轧钢板.................................................................................................. 38 3.各种不锈钢的特性和用途.................................................................................... 39 4.世界各国不锈钢标准钢号对照表 ......................................................................... 39 第二讲有色金属材料（非黑色金属） ................................................................................. 42 第一节有色金属概述................................................................................................... 42 1.有色金属分类..................................................................................................... 42 2.有色金属产品牌号表示方法................................................................................ 43 第二节铜及铜合金...................................................................................................... 46 1.纯铜................................................................................................................... 46 2.铜合金................................................................................................................ 46 3.铜材................................................................................................................... 49 第三节铝及铝合金...................................................................................................... 52 1.纯铝产品............................................................................................................ 52 2.压力加工铝合金.................................................................................................. 53 3.铝材................................................................................................................... 54 4.铸造铝合金......................................................................................................... 54 5.高强度铝合金..................................................................................................... 55 第三章金属腐蚀基础................................................................................................................. 56 第一讲金属腐蚀概述.......................................................................................................... 56 第一节金属腐蚀的分类............................................................................................... 56 第二节金属腐蚀的形态............................................................................................... 56 1.全面（均匀）腐蚀.............................................................................................. 57 2.孔蚀................................................................................................................... 57 3.缝隙腐蚀............................................................................................................ 58 4.脱层腐蚀............................................................................................................ 59 5.晶间腐蚀............................................................................................................ 59 6.选择性腐蚀......................................................................................................... 60 7.磨损腐蚀............................................................................................................ 60

STW4N150中文资料

1/11July 2005STP4N150STW4N150N-CHANNEL 1500V - 5Ω - 4A TO-220/TO-247Very High Voltage PowerMESH™ MOSFETTable 1: General Featuress TYPICAL R DS (on) = 5 Ωs AVALANCHE RUGGEDNESS s GATE CHARGE MINIMIZEDs VERY LOW INTRINSIC CAPACITANCES sHIGH SPEED SWITCHINGDESCRIPTIONUsing the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has de-signed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.APPLICATIONSs SWITCH MODE POWER SUPPLIESTable 2: Order CodesTYPE V DSS R DS(on)I D Pw STP4N150STW4N1501500 V 1500 V< 7 Ω< 7 Ω4 A 4 A160 W 160 WSALES TYPE MARKING PACKAGE PACKAGINGSTP4N150P4N150TO-220TUBE STW4N150W4N150TO-247TUBERev. 3STP4N150 - STW4N1502/11Table 3: Absolute Maximum ratings( ) Pulse width limited by safe operating area (*) Limited only by maximum temperature allowedTable 4: Thermal DataTable 5: Avalanche CharacteristicsELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)Table 6: On /OffSymbol ParameterValue Unit V DS Drain-source Voltage (V GS = 0)1500V V DGR Drain-gate Voltage (R GS = 20 k Ω)1500V V GS Gate- source Voltage± 30V I D Drain Current (continuous) at T C = 25°C 4A I D Drain Current (continuous) at T C = 100°C 2.5A I DM ( )Drain Current (pulsed)12A P TOT Total Dissipation at T C = 25°C 160W Derating Factor1W/°C T j T stgOperating Junction Temperature Storage Temperature-55 to 150°CTO-220TO-247Rthj-case Thermal Resistance Junction-case Max 0.78°C/W Rthj-ambThermal Resistance Junction-ambient Max62.550°C/WSymbol ParameterMax ValueUnit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)4A E ASSingle Pulse Avalanche Energy(starting T j = 25 °C, I D = I AR , V DD = 50 V)350mJSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 1 mA, V GS = 01500V I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max RatingV DS = Max Rating,T C = 125°C 10500µA µA I GSS Gate-body Leakage Current (V DS = 0)V GS = ± 30 V± 100nA V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 345V R DS(on)Static Drain-source On ResistanceV GS = 10 V, I D = 2 A57Ω3/11STP4N150 - STW4N150ELECTRICAL CHARACTERISTICS (CONTINUED)Table 7: DynamicTable 8: Source Drain Diode(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(2) Pulse width limited by safe operating area.Symbol ParameterTest Conditions Min.Typ.Max.Unit g fs (1)Forward Transconductance V DS = 30 V , I D = 2 A 3.5S C iss C oss C rss Input Capacitance Output CapacitanceReverse Transfer Capacitance V DS = 25 V, f = 1 MHz, V GS = 0130012012pF pF pF t d(on)t r t d(off)t f Turn-on Delay Time Rise TimeTurn-off-Delay Time Fall TimeV DD = 750 V, I D = 2 A, R G = 4.7 Ω, V GS = 10 V (see Figure 19)35304545ns ns ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 600 V, I D = 4 A,V GS = 10 V (see Figure 22)3010950nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (2)Source-drain CurrentSource-drain Current (pulsed)412A A V SD (1)Forward On Voltage I SD = 4 A, V GS = 02V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 4 A, di/dt = 100 A/µs V DD = 45V(see Figure 20)510312ns µC A t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 4 A, di/dt = 100 A/µs V DD = 45V, T j = 150°C (see Figure 20)650412.6ns µC ASTP4N150 - STW4N1504/11Figure 3: Safe Operating Area For TO-220Figure 6: Thermal Impedance For TO-220STP4N150 - STW4N150Figure 9: TransconductanceFigure 12: Static Drain-source On Resistance5/11STP4N150 - STW4N1506/11Figure 15: Source-Drain Forward Characteris-ticsFigure 17: Normalized BVdss vs TemperatureSTP4N150 - STW4N150Figure 18: Unclamped Inductive Load Test Cir-cuitFigure 19: Switching Times Test Circuit For Resistive Load Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery TimesFigure 21: Unclamped Inductive WaveformFigure 22: Gate Charge Test CircuitSTP4N150 - STW4N1508/11STP4N150 - STW4N1509/11STP4N150 - STW4N150Table 9: Revision HistoryDate Revision Description of Changes 11-Mar-20051First release.27-Apr-20052Removed TO-220FP07-Jul-20053Complete version10/11STP4N150 - STW4N150 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronicsAll other names are the property of their respective owners© 2005 STMicroelectronics - All Rights ReservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America11/11。

(华为OSN)04-第4章单板

目录第4章单板.............................................................................................................................4-14.1 单板分类说明.....................................................................................................................4-14.2 单板外形.............................................................................................................................4-34.3 STM-64光接口单元SL64...................................................................................................4-44.3.1 功能.........................................................................................................................4-44.3.2 原理.........................................................................................................................4-44.3.3 面板说明..................................................................................................................4-64.3.4 单板参数配置...........................................................................................................4-84.3.5 版本说明..................................................................................................................4-84.3.6 技术参数..................................................................................................................4-84.4 STM-16光接口单元SL16/SF16.......................................................................................4-104.4.1 功能.......................................................................................................................4-104.4.2 原理.......................................................................................................................4-104.4.3 面板说明................................................................................................................4-124.4.4 单板参数配置.........................................................................................................4-144.4.5 版本说明................................................................................................................4-144.4.6 技术参数................................................................................................................4-154.5 STM-4光接口单元SL4/SLQ4/SLD4.................................................................................4-174.5.1 功能.......................................................................................................................4-174.5.2 原理.......................................................................................................................4-184.5.3 面板说明................................................................................................................4-194.5.4 单板参数配置.........................................................................................................4-214.5.5 版本说明................................................................................................................4-214.5.6 技术参数................................................................................................................4-224.6 STM-1光接口单元SLT1/SLQ1/SL1.................................................................................4-244.6.1 功能.......................................................................................................................4-244.6.2 原理.......................................................................................................................4-254.6.3 面板说明................................................................................................................4-264.6.4 单板参数配置.........................................................................................................4-284.6.5 版本说明................................................................................................................4-284.6.6 技术参数................................................................................................................4-294.7 STM-1电接口单元SLH1/SEP1/EU08/OU08 /TSB8........................................................4-304.7.1 功能.......................................................................................................................4-314.7.2 原理.......................................................................................................................4-314.7.3 面板说明................................................................................................................4-324.7.4 单板保护配置.........................................................................................................4-344.7.5 单板参数配置.........................................................................................................4-374.7.6 版本说明................................................................................................................4-374.7.7 技术参数................................................................................................................4-37 4.8 E4/STM-1电接口单元SPQ4/MU04/TSB8.......................................................................4-394.8.1 功能.......................................................................................................................4-394.8.2 原理.......................................................................................................................4-394.8.3 面板说明................................................................................................................4-414.8.4 单板保护配置.........................................................................................................4-424.8.5 单板参数配置.........................................................................................................4-454.8.6 版本说明................................................................................................................4-454.8.7 技术参数................................................................................................................4-46 4.9 E3/T3电接口单元PL3/PL3A/PD3/C34S/D34S................................................................4-474.9.1 功能.......................................................................................................................4-474.9.2 原理.......................................................................................................................4-474.9.3 面板说明................................................................................................................4-484.9.4 单板保护配置.........................................................................................................4-504.9.5 单板参数配置.........................................................................................................4-534.9.6 版本说明................................................................................................................4-534.9.7 技术参数................................................................................................................4-53 4.10 E1/T1电接口单元PQ1/PQM/D75S/D12S/D12B............................................................4-554.10.1 功能.....................................................................................................................4-554.10.2 原理.....................................................................................................................4-554.10.3 面板说明..............................................................................................................4-574.10.4 单板保护配置.......................................................................................................4-584.10.5 单板参数配置.......................................................................................................4-604.10.6 版本说明..............................................................................................................4-604.10.7 技术参数..............................................................................................................4-61 4.11 千兆以太网接口单元EGS2.............................................................................................4-624.11.1 功能.....................................................................................................................4-624.11.2 原理.....................................................................................................................4-634.11.3 面板说明..............................................................................................................4-654.11.4 单板参数配置.......................................................................................................4-664.11.5 版本说明..............................................................................................................4-674.11.6 技术参数..............................................................................................................4-67 4.12 千兆以太网接口单元EGT2.............................................................................................4-694.12.1 功能.....................................................................................................................4-694.12.2 原理.....................................................................................................................4-704.12.3 面板说明..............................................................................................................4-714.12.4 单板参数配置.......................................................................................................4-724.12.5 版本说明..............................................................................................................4-724.12.6 技术参数..............................................................................................................4-73 4.13 快速以太网处理单元EFS4/EFS0/ETF8/EFF8/ETS8......................................................4-744.13.1 功能.....................................................................................................................4-744.13.2 原理.....................................................................................................................4-764.13.3 面板说明..............................................................................................................4-774.13.4 单板保护配置.......................................................................................................4-784.13.5 单板参数配置.......................................................................................................4-804.13.6 版本说明..............................................................................................................4-814.13.7 技术参数..............................................................................................................4-82 4.14 快速以太网处理单元EFT8..............................................................................................4-834.14.1 功能.....................................................................................................................4-834.14.2 原理.....................................................................................................................4-844.14.3 面板说明..............................................................................................................4-854.14.4 单板参数配置.......................................................................................................4-874.14.5 版本说明..............................................................................................................4-874.14.6 技术参数..............................................................................................................4-87 4.15 弹性以太环网单元EMR0/EGR2.....................................................................................4-894.15.1 功能.....................................................................................................................4-894.15.2 原理.....................................................................................................................4-914.15.3 面板说明..............................................................................................................4-934.15.4 单板参数配置.......................................................................................................4-944.15.5 版本说明..............................................................................................................4-954.15.6 技术参数..............................................................................................................4-96 4.16 ATM处理单元ADL4/ADQ1.............................................................................................4-974.16.1 功能.....................................................................................................................4-974.16.2 原理.....................................................................................................................4-984.16.3 面板说明..............................................................................................................4-994.16.4 单板参数配置.....................................................................................................4-1004.16.5 版本说明............................................................................................................4-1014.16.6 技术参数............................................................................................................4-101 4.17 ATM/IMA业务处理单元IDL4/IDQ1...............................................................................4-1034.17.1 功能...................................................................................................................4-1034.17.2 原理...................................................................................................................4-1044.17.3 面板说明............................................................................................................4-1054.17.4 单板保护配置.....................................................................................................4-1064.17.5 单板参数配置.....................................................................................................4-1074.17.6 版本说明............................................................................................................4-1074.17.7 技术参数............................................................................................................4-108 4.18 SAN业务和Vedio业务单元MST4.................................................................................4-1094.18.1 功能...................................................................................................................4-1094.18.2 原理...................................................................................................................4-1104.18.3 面板说明............................................................................................................4-1114.18.4 单板参数配置.....................................................................................................4-1134.18.5 版本说明............................................................................................................4-1134.18.6 技术参数............................................................................................................4-113 4.19 波长转换单元LWX.......................................................................................................4-1144.19.1 功能...................................................................................................................4-1144.19.2 原理...................................................................................................................4-1144.19.3 面板说明............................................................................................................4-1154.19.4 版本说明............................................................................................................4-1174.19.5 技术参数............................................................................................................4-117 4.20 双路光分插复用单元MR2A/MR2C...............................................................................4-1204.20.1 功能...................................................................................................................4-1204.20.2 原理...................................................................................................................4-1214.20.3 面板说明............................................................................................................4-1214.20.4 版本说明............................................................................................................4-1234.20.5 技术参数............................................................................................................4-123 4.21 光放大单元BA2/BPA....................................................................................................4-1244.21.1 功能...................................................................................................................4-1244.21.2 应用...................................................................................................................4-1244.21.3 原理...................................................................................................................4-1254.21.4 面板说明............................................................................................................4-1264.21.5 版本说明............................................................................................................4-1274.21.6 技术参数............................................................................................................4-127 4.22 盒式光纤放大器COA....................................................................................................4-1294.22.1 功能...................................................................................................................4-1304.22.2 应用...................................................................................................................4-1304.22.3 原理...................................................................................................................4-1314.22.4 面板说明............................................................................................................4-1324.22.5 安装位置............................................................................................................4-1354.22.6 版本说明............................................................................................................4-1364.22.7 技术参数............................................................................................................4-136 4.23 色散补偿单元DCU.......................................................................................................4-1374.23.1 功能...................................................................................................................4-1374.23.2 应用...................................................................................................................4-1374.23.3 原理...................................................................................................................4-1384.23.4 面板说明............................................................................................................4-1394.23.5 版本说明............................................................................................................4-1404.23.6 技术参数............................................................................................................4-140 4.24 交叉时钟单元GXCSA/EXCSA.....................................................................................4-1414.24.1 功能...................................................................................................................4-1414.24.2 原理...................................................................................................................4-1424.24.3 面板说明............................................................................................................4-1434.24.4 单板参数配置.....................................................................................................4-1444.24.5 版本说明............................................................................................................4-1444.24.6 技术参数............................................................................................................4-144 4.25 系统控制与通信单元GSCC..........................................................................................4-1464.25.1 功能...................................................................................................................4-1464.25.2 原理...................................................................................................................4-1474.25.3 面板说明............................................................................................................4-1494.25.4 版本说明............................................................................................................4-1514.25.5 技术参数............................................................................................................4-151 4.26 辅助接口单元AUX........................................................................................................4-1524.26.1 功能...................................................................................................................4-1524.26.2 原理...................................................................................................................4-1524.26.3 面板说明............................................................................................................4-1534.26.4 版本说明............................................................................................................4-1584.26.5 技术参数............................................................................................................4-159 4.27 公务处理单元EOW.......................................................................................................4-1604.27.1 功能...................................................................................................................4-1604.27.2 原理...................................................................................................................4-1604.27.3 面板说明............................................................................................................4-1614.27.4 版本说明............................................................................................................4-1654.27.5 技术参数............................................................................................................4-165 4.28 电源接口单元PIU.........................................................................................................4-1664.28.1 功能...................................................................................................................4-1664.28.2 原理...................................................................................................................4-1664.28.3 面板说明............................................................................................................4-1674.28.4 版本说明............................................................................................................4-1674.28.5 技术参数............................................................................................................4-167 4.29 风扇单元FANA.............................................................................................................4-1694.29.1 功能...................................................................................................................4-1694.29.2 原理...................................................................................................................4-1704.29.3 面板说明............................................................................................................4-1714.29.4 版本说明............................................................................................................4-1714.29.5 技术参数............................................................................................................4-171插图目录图4-1 OptiX OSN 7500单板外形...................................................................................4-3图4-2 SL64工作原理框图..............................................................................................4-5图4-3 SL64的面板图.....................................................................................................4-6图4-4 SL16工作原理框图............................................................................................4-11图4-5 SL16/SF16的面板图..........................................................................................4-13图4-6 SL4/SLQ4/SLD4板工作原理框图.......................................................................4-18图4-7 SL4、SLD4和SLQ4的面板图...........................................................................4-20图4-8 SLT1/SLQ1/SL1工作原理框图...........................................................................4-25图4-9 SLT1/SLQ1/SL1的面板图..................................................................................4-27图4-10 SLH1/SEP工作原理框图..................................................................................4-31图4-11 SLH1/SEP1/EU08/OU08/TSB8的面板图........................................................4-33图4-12 SLH1 1:3的TPS保护原理................................................................................4-34图4-13 SLH1板1组1:3保护时工作板和保护板的配置关系........................................4-36图4-14 SPQ4工作原理框图.........................................................................................4-40图4-15 SPQ4和MU04的面板图..................................................................................4-41图4-16 SPQ4板1:3 TPS保护原理图...........................................................................4-43图4-17 SPQ4板1:3保护时工作板和保护板的配置关系...............................................4-44图4-18 PL3/PD3板的原理框图....................................................................................4-48图4-19 PL3、PL3A、PD3、C34S和D34S的面板图....................................................4-49图4-20 PD3板1:3 TPS保护的实现原理图...................................................................4-51图4-21 PL3/PD3板1:3保护时工作板和保护板的槽位配置..........................................4-52图4-22 PQ1/ PQM板的原理框图..................................................................................4-56图4-23 PQ1、PQM、D75S、D12S和D12B的面板图..................................................4-57图4-24 PQ1板1:4 TPS保护原理.................................................................................4-59图4-25 PQ1/PQM 1:4保护时工作板和保护板的配置关系............................................4-60图4-26 EGS2板原理框图.............................................................................................4-64图4-27 EGS2的面板图................................................................................................4-65图4-28 EGT2板原理框图.............................................................................................4-70图4-29 EGT2的面板图................................................................................................4-71图4-30 EFS4/EFS0板原理框图...................................................................................4-76图4-31 EFS0、 EFS4、ETF8、ETS8和EFF8的面板图.............................................4-77图4-32 EFS0板1:1 TPS保护的实现原理图.................................................................4-79图4-33 EFS0板1:1 TPS保护时工作板和保护板的槽位配置........................................4-80图4-34 EFT8板原理框图.............................................................................................4-84图4-35 EFT8的面板图.................................................................................................4-86图4-36 EMR0/EGR2板原理框图.................................................................................4-92图4-37 EMR0/EGR2的面板图.....................................................................................4-93图4-38 ADL4和ADQ1板原理框图...............................................................................4-98图4-39 ADL4和ADQ1的面板图...................................................................................4-99图4-40 IDL4和IDQ1板原理框图................................................................................4-104图4-41 IDL4和IDQ1的面板图...................................................................................4-105图4-42 MST4板原理框图...........................................................................................4-110图4-43 MST4板的面板图...........................................................................................4-112图4-44 LWX板工作原理框图......................................................................................4-115图4-45 LWX板的面板图.............................................................................................4-116图4-46 MR2A/MR2C用作OTM站点............................................................................4-120图4-47 MR2A/MR2C与LWX实现两波上下的OADM站点............................................4-120图4-48 MR2A/MR2C工作原理框图............................................................................4-121图4-49 MR2A板的面板图...........................................................................................4-122图4-50 BA、PA在光传输系统中的位置......................................................................4-125图4-51 BA2，BPA工作原理框图................................................................................4-125。

4极永磁无刷直流电机仿真结果英文翻译

4极永磁无刷直流电机仿真结果BRUSHLESS PERMANENT MAGNET DC MOTOR DESIGNFile: Setup1.resGENERAL DATARated Output Power (kW):0.55 额定输出功率Rated Voltage (V):220 额定电压Number of Poles:4 极数Given Rated Speed (rpm):1500 给定额定转速Frictional Loss (W):11 摩擦损耗Windage Loss (W):0 风损Rotor Position:Inner 转子位置Type of Load:Constant Power 负载类型Type of Circuit:C2 控制电路类型Lead Angle of Trigger in Elec. Degrees:0 晶体管导通角Trigger Pulse Width in Elec. Degrees:120 导通脉宽One-Transistor Voltage Drop (V): 2 晶体管压降One-Diode Voltage Drop (V): 2 二极管压降Operating Temperature (C):75 运行温度Maximum Current for CCC (A):0Minimum Current for CCC (A):0STATOR DATANumber of Stator Slots:24 定子槽数Outer Diameter of Stator (mm): 120 定子外径Inner Diameter of Stator (mm): 75 定子内径Type of Stator Slot: 3 定子槽类型Stator Sloths0 (mm): 0.5hs1 (mm): 1hs2 (mm): 8.2bs0 (mm): 2.5bs1 (mm): 5.6bs2 (mm): 7.6rs (mm): 0Top Tooth Width (mm): 4.62351 齿顶宽度Bottom Tooth Width (mm): 4.78125 齿底宽度Skew Width (Number of Slots) 1 斜槽宽Length of Stator Core (mm): 65 定子铁心长度Stacking Factor of Stator Core:0.95 定子叠压系数Type of Steel:D23_50 定子材料Slot Insulation Thickness (mm): 0 槽绝缘厚度Layer Insulation Thickness (mm): 0 层绝缘厚度End Length Adjustment (mm): 0 端部长度调整Number of Parallel Branches:1Number of Conductors per Slot:60 每槽导体数Type of Coils:21 绕组类型Average Coil Pitch: 5 平均节距Number of Wires per Conductor:1 电线每导体数Wire Diameter (mm): 0.71 线径Wire Wrap Thickness (mm): 0.08 线绝缘厚度Slot Area (mm^2):59.42 槽面积Net Slot Area (mm^2):54.12 净槽面积Limited Slot Fill Factor (%):75 最大槽满率Stator Slot Fill Factor (%):69.1907 槽满率Coil Half-Turn Length (mm): 143.747 线圈半匝长ROTOR DATAMinimum Air Gap (mm): 0.5 最小气隙Inner Diameter (mm): 26Length of Rotor (mm): 65Stacking Factor of Iron Core:0.95 叠压系数Type of Steel:D23_50 转子材料Polar Arc Radius (mm): 37 极弧半径Mechanical Pole Embrace:0.7 机械极弧系数Electrical Pole Embrace:0.699985 电极弧系数Max. Thickness of Magnet (mm): 3.5 最大磁钢厚度Width of Magnet (mm): 38.7594 磁钢宽度Type of Magnet:XG196/96 磁钢材料Type of Rotor:1 转子类型Magnetic Shaft:No 转轴是否磁性PERMANENT MAGNET DATA 永磁材料参数Residual Flux Density (Tesla):0.96 剩磁密度Coercive Force (kA/m):690 矫顽力Maximum Energy Density (kJ/m^3):183 最大磁能积Relative Recoil Permeability:1 相对回复磁导率Demagnetized Flux Density (Tesla):5.85937e-005 退磁磁通密度Recoil Residual Flux Density (Tesla):0.867073 回复剩磁密度Recoil Coercive Force (kA/m):690.015 回复矫顽力MATERIAL CONSUMPTION 材料消耗Armature Copper Density (kg/m^3): 8900 电枢铜密度Permanent Magnet Density (kg/m^3): 7800 永磁材料密度Armature Core Steel Density (kg/m^3): 7820 电枢铁芯密度Rotor Core Steel Density (kg/m^3): 7820 转子铁芯密度Armature Copper Weight (kg): 0.729388 电枢铜重量Permanent Magnet Weight (kg): 0.275114 永磁材料重量Armature Core Steel Weight (kg): 2.63935 电枢铁心重量Rotor Core Steel Weight (kg): 1.44611 转子铁心重量Total Net Weight (kg): 5.08996 总重量Armature Core Steel Consumption (kg): 5.44721 电枢铁心消耗Rotor Core Steel Consumption (kg): 1.85836 转子铁心消耗STEADY STATE PARAMETERS 稳态参数Stator Winding Factor:0.879653 定子绕组系数D-Axis Reactive Inductance Lad (H):0.021587 直轴电枢反应电抗Q-Axis Reactive Inductance Laq (H):0.021587 交轴电枢反应电抗D-Axis Inductance L1+Lad(H):0.0281925 直轴同步电抗Q-Axis Inductance L1+Laq(H):0.0281925 交轴同步电抗Armature Leakage Inductance L1 (H):0.00660549 电枢绕组漏抗Zero-Sequence Inductance L0 (H):0 零序电抗Armature Phase Resistance R1 (ohm): 5.67264 电枢绕组相电阻Armature Phase Resistance at 20C (ohm): 4.6662 20度绕组相电阻D-Axis Time Constant (s):0.00380546 直轴时间常数Q-Axis Time Constant (s):0.00380546 交轴时间常数Ideal Back-EMF Constant KE (Vs/rad):0.981343 反电势常数Start Torque Constant KT (Nm/A):0.800227 启动转矩常数Rated Torque Constant KT (Nm/A):1.02912 额定转矩常数NO-LOAD MAGNETIC DATA 空载磁路数据Stator-Teeth Flux Density (Tesla): 1.61237 定子齿磁密Stator-Yoke Flux Density (Tesla): 1.16604 定子轭磁密Rotor-Yoke Flux Density (Tesla):0.728065 转子轭磁密Air-Gap Flux Density (Tesla):0.677341 气隙磁密Magnet Flux Density (Tesla):0.731645 磁钢磁密Stator-Teeth By-Pass Factor:0.00468801 定子齿旁路系数Stator-Yoke By-Pass Factor:3.45683e-005 定子轭旁路系数Rotor-Yoke By-Pass Factor: 2.00386e-005 转子轭旁路系数Stator-Teeth Ampere Turns (A.T):36.1578 定子齿安匝Stator-Yoke Ampere Turns (A.T):14.5864 定子轭安匝Rotor-Yoke Ampere Turns (A.T): 3.18795 转子轭安匝Air-Gap Ampere Turns (A.T):323.26 气隙安匝Magnet Ampere Turns (A.T):-377.204 磁钢磁势Armature Reactive Ampere Turns 电枢反应安匝at Start Operation (A.T):3647.8 启动安匝数Leakage-Flux Factor:1 漏磁系数Correction Factor for Magnetic 磁路修正系数Circuit Length of Stator Yoke:0.582455 定子轭磁路修正系数Correction Factor for MagneticCircuit Length of Rotor Yoke:0.793199 转子轭磁路修正系数No-Load Speed (rpm):2091.38 空载转速Cogging Torque (N.m): 6.36774e-013 齿槽转矩FULL-LOAD DATA 负载特性数据Average Input Current (A): 2.93027 平均负载电流Root-Mean-Square Armature Current (A): 1.95039 电枢电流有效值Armature Thermal Load (A^2/mm^3):58.7204 电枢热负荷Specific Electric Loading (A/mm):11.9199 电枢线负荷Armature Current Density (A/mm^2): 4.92624 电枢电流密度Frictional and Windage Loss (W):13.0778 风磨损耗Iron-Core Loss (W):28.9672 铁芯损耗Armature Copper Loss (W):43.1578 电枢铜耗Transistor Loss (W):8.92247 晶体管损耗Diode Loss (W):0.44813 二极管损耗Total Loss (W):94.5734 总损耗Output Power (W):550.085输出功率Input Power (W):644.659 输入功率Efficiency (%):85.3297 效率Rated Speed (rpm):1783.34 额定转速Rated Torque (N.m): 2.94556 额定转矩/负载Locked-Rotor Torque (N.m):40.3887 堵转转矩/启动转矩Locked-Rotor Current (A):50.559 启动电流WINDING ARRANGEMENT 绕组排列The 2-phase, 2-layer winding can be arranged in 6 slots as below: AAABBBAngle per slot (elec. degrees):30 每槽电角度Phase-A axis (elec. degrees):105 A相轴电角度First slot center (elec. degrees):0 第一槽中心角TRANSIENT FEA INPUT DATA 瞬态数据For Armature Winding: 电枢绕组Number of Turns:360 匝数Parallel Branches: 1 并联支路数Terminal Resistance (ohm): 5.67264 相电阻End Leakage Inductance (H):0.00252843 终端漏抗2D Equivalent Value: 二维分析用到的等效数据Equivalent Model Depth (mm):65 等效气隙长度Equivalent Stator Stacking Factor:0.95 等效定子叠压系数Equivalent Rotor Stacking Factor:0.95 等效转子叠压系数Equivalent Br (Tesla):0.867073 等效剩磁磁密Equivalent Hc (kA/m):690.015 等效矫顽力Estimated Rotor Moment of Inertia (kg m^2):0.00149257 转动惯量估计值。

SPW47N60CFD中文资料

SPW47N60CFDParameter Symbol Conditions Unitmin.typ.max. Thermal characteristicsThermal resistance, junction - case R thJC--0.3K/WR thJA leaded--62Soldering temperature, wave soldering T sold 1.6 mm (0.063 in.)from case for 10 s--260°CElectrical characteristics, at T j=25 °C, unless otherwise specifiedStatic characteristicsDrain-source breakdown voltage V(BR)DSS V GS=0 V, I D=250 µA600--V Avalanche breakdown voltage V(BR)DS V GS=0 V, I D=46 A-700-Gate threshold voltage V GS(th)V DS=V GS, I D=2.9 mA345Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V,T j=25 °C-6-µAV DS=600 V, V GS=0 V,T j=150 °C-5000-Gate-source leakage current I GSS V GS=20 V, V DS=0 V--100nADrain-source on-state resistance R DS(on)V GS=10 V, I D=29 A,T j=25 °C-0.070.083ΩV GS=10 V, I D=29 A,T j=150 °C-0.15-Gate resistance R G f=1 MHz, open drain-0.62-Transconductance g fs |V DS|>2|I D|R DS(on)max,I D=29 A-30-SValuesThermal resistance, junction - ambientSPW47N60CFDParameterSymbol ConditionsUnitmin.typ.max.Dynamic characteristics Input capacitance C iss -7700-pFOutput capacitanceC oss -2200-Reverse transfer capacitanceC rss-77-Effective output capacitance, energyrelated 4)C o(er)-245-Effective output capacitance, time related 5)C o(tr)-453-Turn-on delay time t d(on)-30-nsRise timet r -30-Turn-off delay time t d(off)-100-Fall timet f-15-Gate Charge Characteristics Gate to source charge Q gs -54-nCGate to drain charge Q gd -130-Gate charge total Q g -248322Gate plateau voltageV plateau-7.1-V3)Repetitive avalanche causes additional power losses that can be calculated as P AV =E AR *f.4)C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.5)C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.1) J-STD20 and JESD222)Pulse width t p limited by T j,maxValues V GS =0 V, V DS =25 V, f =1 MHzV DD =400 V,V GS =10 V, I D =46 A, R G =3.3 ΩV DD =480 V, I D =46 A, V GS =0 to 10 VV GS =0 V, V DS =0 V to 480 V5)Cmodels the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if th61 Power dissipation5 Typ. output characteristics9 Typ. gate charge13 Drain-source breakdown voltage17 Typ. reverse recovery chargeSPW47N60CFD Definition of diode switching characteristicsSPW47N60C FD PG-TO-247-3-1Rev. 1.2 p age 11 2005-06-28SPW47N60CFD Published byInfineon Technologies AGBereich KommunikationSt.-Martin-Straße 53D-81541 München© Infineon Technologies AG 1999All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered aswarranted characteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.InformationFor further information on technology, delivery terms and conditions and prices, please contact yournearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide(see address list).WarningsDue to technical requirements, components may contain dangerous substances.For information on the types in question, please contact your nearest Infineon Technologies office.Infineon Technologies' components may only be used in life-support devices or systems with theexpressed written approval of Infineon Technologies if a failure of such components can reasonablybe expected to cause the failure of that life-support device or system, or to affect the safety oreffectiveness of that device or system. Life support devices or systems are intended to be implantedin the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,it is reasonable to assume that the health of the user or other persons may be endangered.Rev. 1.2 page 12 2005-06-28。

7NM60N

July 2010Doc ID 16472 Rev 21/17STD7NM60N, STF7NM60N STP7NM60N, STU7NM60NN-channel 600 V , 5 A, 0.76 Ω, DP AK, TO-220FP , TO-220, IP AKsecond generation MDmesh™ Power MOSFETFeatures■100% avalanche tested■Low input capacitance and gate charge ■Low gate input resistanceApplication■Switching applicationsDescriptionThese devices are N-channel Power MOSFETs realized using the second generation ofMDmesh TM technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dtcapability and excellent avalanche characteristics.Type V DSS @ T JmaxR DS(on) maxI DSTD7NM60N STF7NM60N STP7NM60N STU7NM60N650 V < 0.9 Ω 5 ATable 1.Device summaryOrder codes MarkingPackage Packaging STD7NM60N 7NM60NDP AKTape and reelSTF7NM60N TO-220FP T ube STP7NM60N TO-220T ube STU7NM60NIP AKT ubeContents STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60NContents1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162/17 Doc ID 16472 Rev 2STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Electrical ratingsDoc ID 16472 Rev 23/171 Electrical ratingsTable 2.Absolute maximum ratingsSymbolParameterValueUnitTO-220, IPAK,DPAKTO-220FPV DS Drain-source voltage (V GS = 0)600V V GS Gate-source voltage± 25VI D Drain current (continuous) at T C = 25 °C 5 5 (1)1.Limited only by maximum temperature allowed A I D Drain current (continuous) at T C = 100 °C 3 3 (1)A I DM (2)2.Pulse width limited by safe operating area Drain current (pulsed)2020(1)A P TOT Total dissipation at T C = 25 °C 4520W dv/dt (3)3.I SD ≤ 5 A, di/dt ≤ 400 A/µs, V Peak < V (BR)DSSPeak diode recovery voltage slope15V/ns V ISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; T C = 25 °C)2500V T stg Storage temperature- 55 to 150°C T jMax. operating junction temperature150°CTable 3.Thermal dataSymbol ParameterValueUnitDPAK IPAKTO-220TO-220FPR thj-case Thermal resistance junction-case max 2.78 6.25°C/W R thj-amb Thermal resistance junction-ambient max 10062.5°C/W R thj-pcb Thermal resistance junction-pcb max 50°C/WT lMaximum lead temperature for soldering purpose300°CTable 4.Thermal dataSymbol ParameterValue Unit I ARAvalanche current, repetitive or not-repetitive (pulse width limited by T j max)2A E ASSingle pulse avalanche energy(starting T j = 25°C, I D = I AR , V DD = 50 V)119mJElectrical characteristics STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N4/17 Doc ID 16472 Rev 22 Electrical characteristics(T C = 25 °C unless otherwise specified)Table 5.On /off statesSymbol Parameter Test conditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourcebreakdown voltageI D = 1 mA, V GS = 0600V I DSS Zero gate voltagedrain current (V GS = 0)V DS = Max rating V DS = Max rating, T C =125 °C 1100µA µA I GSS Gate-body leakage current (V DS = 0)V GS = ± 20 V100nA V GS(th)Gate threshold voltage V DS = V GS , I D = 250 µA 234V R DS(on)Static drain-source onresistanceV GS = 10 V , I D = 2.5 A0.760.9ΩTable 6.DynamicSymbol Parameter Test conditionsMin.Typ.Max.Unit C iss C oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS = 50 V , f = 1 MHz, V GS = 0-36324.61.1-pF pF pFC o(tr)(1)1.Is defined as a constant equivalent capacitance giving the same charging time as C oss when V DSincreases from 0 to 80% V DSS Equivalentcapacitance time relatedV DS = 0 to 480 V , V GS = 0-27-pFC o(er)(2)2.Is defined as a constant equivalent capacitance giving the same stored energy as C oss when V DSincreases from 0 to 80% V DSSEquivalentcapacitance energy related -17-pFR G Intrinsic gate resistancef = 1 MHz open drain - 5.4-ΩQg Q gs Q gdT otal gate charge Gate-source charge Gate-drain chargeV DD = 480 V , I D = 5 A,V GS = 10 V (see Figure 18)-142.77.7-nC nC nCSTD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Electrical characteristicsDoc ID 16472 Rev 25/17Table 7.Switching timesSymbol ParameterTest conditions Min.Typ.MaxUnit t d(on)t r t d(off)t fTurn-on delay time Rise timeTurn-off-delay time Fall timeV DD = 300 V , I D = 2.5 A, R G = 4.7 Ω, V GS = 10 V (see Figure 19)-7102612-ns ns ns nsTable 8.Source drain diodeSymbol ParameterTest conditionsMin.Typ.Max.Unit I SD I SDM (1)1.Pulse width limited by safe operating area Source-drain currentSource-drain current (pulsed)-520A A V SD (2)2.Pulsed: pulse duration = 300 µs, duty cycle 1.5%Forward on voltage I SD = 5 A, V GS = 0- 1.3V t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 5 A, di/dt = 100 A/µs V DD = 60 V (see Figure 22)-2131.514ns nC A t rr Q rr I RRMReverse recovery time Reverse recovery charge Reverse recovery currentI SD = 5 A, di/dt = 100 A/µs V DD = 60 V , T j = 150 °C (see Figure 22)-2651.814ns nC AElectrical characteristics STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N6/17 Doc ID 16472 Rev 22.1 Electrical characteristics (curves)Figure 2.Safe operating area for DPAK,Figure 3.Thermal impedance for DPAK, IPAKSTD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Electrical characteristicsDoc ID 16472 Rev 27/17Electrical characteristics STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N8/17 Doc ID 16472 Rev 2Figure 14.Normalized gate threshold voltageFigure 15.Normalized on resistance vsSTD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Test circuitsDoc ID 16472 Rev 29/173 Test circuitsFigure 17.Switching times test circuit forFigure 18.Gate charge test circuitFigure 19.Test circuit for inductive loadFigure 20.Unclamped inductive load testFigure 21.Unclamped inductive waveformFigure 22.Switching time waveformPackage mechanical data STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N 4 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in different grades ofECOPACK® packages, depending on their level of environmental compliance. ECOPACK®specifications, grade definitions and product status are available at: . ECOPACKis an ST trademark.10/17 Doc ID 16472 Rev 2STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Package mechanical dataTable 9.TO-220FP mechanical datammDim.Min.Typ.Max.A 4.4 4.6B 2.5 2.7D 2.5 2.75E0.450.7F0.751F1 1.15 1.70F2 1.15 1.70G 4.95 5.2G1 2.4 2.7H1010.4L216L328.630.6L49.810.6L5 2.9 3.6L615.916.4L799.3Dia3 3.2Doc ID 16472 Rev 211/17Package mechanical data STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N12/17 Doc ID 16472 Rev 2STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Package mechanical dataDoc ID 16472 Rev 213/17Package mechanical data STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N14/17 Doc ID 16472 Rev 2STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Packaging mechanical dataDoc ID 16472 Rev 215/175Packaging mechanical dataTAPE AND REEL SHIPMENTDPAK FOOTPRINTDIM.mm inch MIN.MAX.MIN.MAX.A 33012.992B 1.50.059C 12.813.20.5040.520D 20.20.795G 16.418.40.6450.724N 501.968T22.40.881BASE QTY BULK QTY 25002500REEL MECHANICAL DATADIM.mm inch MIN.MAX.MIN.MAX.A0 6.870.2670.275B010.410.60.4090.417B112.10.476D 1.5 1.60.0590.063D1 1.50.059E 1.65 1.850.0650.073F 7.47.60.2910.299K0 2.55 2.750.1000.108P03.94.10.1530.161P17.98.10.3110.319P2 1.9 2.10.0750.082R 40 1.574W15.716.30.6180.641TAPE MECHANICAL DATAAll dimensions are in millimetersRevision history STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N16/17 Doc ID 16472 Rev 26 Revision historyTable 10.Document revision historyDate RevisionChanges29-Oct-20091First release.19-Jul-20102Corrected values in Table 3: Thermal data .STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60NPlease Read Carefully:Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.All ST products are sold pursuant to ST’s terms and conditions of sale.Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.ST and the ST logo are trademarks or registered trademarks of ST in various countries.Information in this document supersedes and replaces all information previously supplied.The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.© 2010 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of AmericaDoc ID 16472 Rev 217/17。

Z23S4407N中文资料(AEROVOX)中文数据手册「EasyDatasheet - 矽搜」

• 专利压力灭弧符合UL810
每个电容器填充有环氧化Soybeanoil
要求.
电介液.大豆油已被证明可靠性
•环防护专利非PCB
在几个过去几十年.大豆油是
环氧大豆油.
环防护和可生物降解.该
大豆油防护护金属化膜不受腐蚀,
认证证书
助剂传热,并有助于抑制降解
电晕效应,这可能导致否则prema-
UL和CUL文件编号E51176
所有AEROMET II电容都可以用时间和成本节约
EIA RS-186-3E状态测试要求.
AeroMount系统.触点厂家触点厂家对于需要reycled了解详细信息.
认证证书
EIA RS-186-2E湿度测试要求（TropiCAL条件）.
• UL文件号E51176
• CSA文件号058450
• VDE认证可用
电压编码电压第一个两位数
24 = 240 V交流 33 = 330 V交流 37 = 370 V交流 44 = 440 V交流 48 = 480 V交流 60 = 600 Vac
电容值
（μF额定值） 25 = 25 µF 03 = 3 µF)
工厂代码
AeroMet II 00 =单额定值 XX =μF价值
产品系列
M = AeroMet II Z = SuperMet & ZeMax TM
机箱样式
22 = 1½"圆 23 = 1.75"圆 24 = 2.0"圆 26 = 2½"圆
50 = 1.25"椭圆形 42 = 1½"椭圆形 64 = 1.75"椭圆形 62 = 2.0"椭圆形
注入
P = Supernol（M系列） S = SuperSoy（Z系列）

STS4DNF60L;中文规格书,Datasheet资料

March 2010Doc ID 6121 Rev 91/12STS4DNF60LN-channel 60 V , 0.045 Ω, 4 A, SO-8STripFET™ Power MOSFETFeatures■Standard outline for easy automated surface mount assembly ■Low threshold driveApplication■Switching applicationsDescriptionThis Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.Type V DSS R DS(on)I D STS4DNF60L60V<0.055Ω4ATable 1.Device summaryOrder code Marking Package Packaging STS4DNF60L4DF60LSO-8Tape & reelContents STS4DNF60LContents1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112/12Doc ID 6121 Rev 9STS4DNF60L Electrical ratingsDoc ID 6121 Rev 93/121 Electrical ratingsTable 2.Absolute maximum ratingsSymbol ParameterValue Unit V DS Drain-source voltage (V GS = 0)60V V GS Gate- source voltage± 15V I D Drain current (continuous) at T C = 25 °C 4A I D Drain current (continuous) at T C = 100 °C 2.5A I DM (1)1.Pulse width limited by safe operating area Drain current (pulsed)16A P TOT (2)2.P TOT =1.6 W for single operation T otal dissipation at T C = 25 °C 2W E AS (3)3.Starting T J = 25 °C, I D = 4 A, V DD = 30 VSingle pulse avalanche energy 80mJ T jT stgOperating junction temperature Storage temperature- 55 to 150°CTable 3.Thermal dataSymbolParameterValue Unit Rthj-pcb Thermal resistance junction-pcb D.O.(1)1.When mounted on inch² FR-4 board, 2 Oz Cu, t < 10sec, dual operation62.5°C/WElectrical characteristics STS4DNF60L4/12Doc ID 6121 Rev 92 Electrical characteristics(T C = 25 °C unless otherwise specified)Table 4.On /off statesSymbol Parameter Test conditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourcebreakdown voltageI D = 250 µA, V GS = 060V I DSS Zero gate voltagedrain current (V GS = 0)V DS = Max rating V DS = Max rating, T C =125 °C 110µA µA I GSS Gate-body leakage current (V DS = 0)V GS = ± 15 V± 100nA V GS(th)Gate threshold voltage V DS = V GS , I D = 250 µA 11.72.5V R DS(on)Static drain-source on resistance V GS = 10 V , I D = 2 A V GS = 4.5 V , I D = 2 A0.0450.0500.0550.065ΩΩTable 5.DynamicSymbol Parameter Test conditionsMin.Typ.Max.Unit g fs Forwardtransconductance V DS =25 V , I D =2 A-25-S C issC oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS = 25 V , f = 1 MHz, V GS = 0-103014040-pF pF pF Q g Q gs Q gdT otal gate charge Gate-source charge Gate-drain chargeV DD = 48 V , I D = 4 A,V GS = 4.5 V (see Figure 13)-1544-nC nC nCSTS4DNF60L Electrical characteristicsDoc ID 6121 Rev 95/12Table 6.Switching timesSymbol ParameterTest conditions Min.Typ.Max.Unit t d(on)t r Turn-on delay time Rise timeV DD = 30 V , I D = 2.2 A, R G = 4.7 Ω, V GS = 10 V (see Figure 12)-1528-ns ns t d(off)t fTurn-off delay time Fall time-4510-ns nsTable 7.Source drain diodeSymbol ParameterTest conditionsMin.Typ.Max.Unit I SD I SDM (1)1.Pulse width limited by safe operating area Source-drain currentSource-drain current (pulsed)-416A A V SD (2)2.Pulsed: Pulse duration = 300 µs, duty cycle 1.5%Forward on voltage I SD = 4 A, V GS = 0- 1.2V t rr Q rr I RRMReverse recovery time Reverse recovery charge Reverse recovery currentI SD = 4 A, di/dt = 100 A/µs V DD = 20 V (see Figure 17)-85852ns nC AElectrical characteristics STS4DNF60L6/12Doc ID 6121 Rev 92.1 Electrical characteristics (curves)Figure 2.Safe operating area Figure 3.Thermal impedanceFigure 4.Output characteristics Figure 5.Transfer characteristicsFigure 6.Source-drain diode forwardFigure 7.Static drain-source on resistanceSTS4DNF60L Electrical characteristicsDoc ID 6121 Rev 97/12Figure 8.Gate charge vs gate-source voltage Figure 9.Capacitance variationsFigure 10.Normalized gate threshold voltageFigure 11.Normalized on resistance vsTest circuits STS4DNF60L8/12Doc ID 6121 Rev 93 Test circuitsFigure 12.Switching times test circuit forFigure 13.Gate charge test circuitFigure 14.Test circuit for inductive loadFigure 15.Unclamped Inductive load testFigure 16.Unclamped inductive waveformFigure 17.Switching time waveformSTS4DNF60L Package mechanical data 4 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in different grades ofECOPACK® packages, depending on their level of environmental compliance. ECOPACK®specifications, grade definitions and product status are available at: . ECOPACKis an ST trademark.Doc ID 6121 Rev 99/12Package mechanical data STS4DNF60L10/12Doc ID 6121 Rev 9分销商库存信息: STMSTS4DNF60L。

常用高速钢刀具材料

常用高速钢刀具材料高速钢是一种含多量碳(C)、钨(W)、钼(Mo)、铬(Cr)、钒(V)等元素的高合金钢，热处理后具有高热硬性。

当切削温度高达600℃以上时，硬度仍无明显下降，用其制造的刀具切削速度可达每分钟60米以上，而得其名。

一.高性能高速钢具有更好的硬度和热硬性，这是通过改变高速钢的化学成分，提高性能而发展起来的新品种。

它具有更高的硬度、热硬性，切削温度达摄氏650度时，硬度仍可保持在60HRC以上。

耐用性为普通高速钢的1.5-3倍，适用于制造加工高温合金、不锈钢、钛合金、高强度钢等难加工材料的刀具。

主要品种有4种，分别为高炭系高速钢、高钒系高速钢、含钴系高速钢和舻高速钢。

1.高碳系高速钢牌号为9w18Cr4V，因含碳量高(0.9%)，故硬度、耐磨性及热硬性都比较好。

用其制造的刀具在切削不锈钢、耐热合金等难加工材料时，寿命显著提高，但其抗弯强度为3000MPa，冲击韧性较低，热处理工艺要求严格。

2.高钒系高速钢M3牌号有W12Cr4V4Mo及W6Mo5Cr4V3(美国牌号M3)，含钒量达3-4%，使耐磨性大大提高，但随之带来的是可磨性变差。

高钒系高速钢的使用及发展还需要依赖于磨削工艺及砂轮技术的发展。

3.钴高速钢牌号有W2Mo9Cr4VCo8(美国牌号M42)。

其特点为：含钒量不高(1%)，含钴量高(8%)，钴能促使碳化物在淬火加热时更多地溶解在基体内，利用高的基体硬度来提高耐磨性。

这种高速钢硬度、热硬性、耐磨性及可磨性都很好。

热处理硬度可达67-70HRC，但也有采取特殊热处理方法，得到67-68HRC硬度，使其切削性能(特别是间断切削)得到改善，提高冲击韧性。

钴高速钢可制成各种刀具，用于切削难加工材料效果很好，又因其磨高速钢是一种含多量碳(C)、钨(W)、钼(Mo)、铬(Cr)、钒(V)等元素的高合金钢，热处理后具有高热硬性。

当切削温度高达600℃以上时，硬度仍无明显下降，用其制造的刀具切削速度可达每分钟60米以上，而得其名。

SEW 470耐热钢材质标准(中文版)

SEW 470 耐热轧钢和锻钢1 适用范围1.1这一标准是适用于常用耐热轧钢和锻钢制品，包括热成型和冷成型的钢板，带钢，钢棒，钢丝，无缝管和焊管以及锻件。

对于其他形式的制品，例如半成品（象初轧钢锭和初轧坯）可以在合同中由双方协议决定。

1.2耐热铸钢参见DIN 17465和SEW 471。

1.3阀门钢见SEW 490和DIN 17480。

2 范围所谓的耐热钢是指无论是在短期还是长期都能在550℃以上高温气体和燃烧产物如盐和金属熔液环境下保持良好的机械性能。

但是这种耐热特性取决于热腐蚀的条件，因此不能用单个的检测工艺得到的数值来定义（见第八章）。

3 尺寸及允许的尺寸误差3.1对于钢丝，钢棒和锻件请参照SEW 470标准最后的关于材料为耐热钢制品的特殊尺寸标准。

3.2对于钢带，钢板和管子见最后的不锈钢尺寸标准。

3.3因为耐高温钢的特殊性，所以是不能达到所有的允许的尺寸误差范围的，所有生产商必须在合同中注明能达到的尺寸误差范围。

4 重量计算和允许的重量误差4.1对于额定重量和额定误差见图5用厚度来区分的给定值来计算。

4.2当在最后章节提到的标准没有规定的情况下，对于允许的重量误差请在下订单时协定。

5 名称5.1钢种的缩写相应见关于标准本3的注解章节2.1.2.2，材质号按照DIN 17007，钢种的完整名称就是材料页除了缩写以外的材质号（见章节7.7）名称举例：钢X12 CrNiTi 189（材质号1.4878），执行种类热成型，热处理，未去磷（按图4相当于执行种类b）X12 CrNiTi 189-热成型，热处理，未去磷X12 CrNiTi 189b1.4878-热成型，热处理，未去磷1.4878b5.2钢种的名称和产品的缩写名称相关联，就象例子中对相应的产品的尺寸标准的说明一样。

6 钢种和钢的选择6.1在这一材质列表中所提到的钢的种类是按照它们的化学成分和金属结构来归类，见图1。

6.2买方决定选购的钢种，如果买方没有足够的经验选择适合加工与使用的钢种，我们推荐在下定单之前与供货商进行沟通。

in4007中文资料_数据手册_参数

, PEAK FORWARD SURGE (A)
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万联芯城-电子元器件采购网，提供一站式配套，解决物料烦恼，万联芯城销售电子元器件范围包括 IC 集成电路，电阻电容，二三极管，可进行一站式 BOM 表配单，BOM 配单整单采购可享优惠价，提交 BOM 表报价，最快可当天发货，电子元器件一站式采购，满足客户多样化物料需求，点击进入万联芯城。
SYMBOL 1N
1N
4001G 4002G
1N 4003G
1N 4004G
1N 4005G
1N 4006G
1N 4007G
Unit
VRRM
50
100 200 400 600 800 1000 V
VRMS
35
70
140 280 420 560 700 V
VDC
50 100 200 400 600 800 1000 V
•The products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these products for use in such applications do so at their own ris k andagree to fully indemnify DIYI for any damages resulting from such improper use or sale.

STW25NM60N中文资料

1/12PRODUCT PREVIEWJune 2005This is preliminary information on a new product now in development. Details are subject to change without notice.STP25NM60N - STF25NM60N STB25NM60N/-1 - STW25NM60NSECOND GENERATION MDmesh™ MOSFETTable 1: General Featuress WORLD’S LOWEST ON RESISTANCE s TYPICAL R DS (on) = 0.140 Ωs HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTEDsLOW INPUT CAPACITANCE AND GATE CHARGEsLOW GATE INPUT RESISTANCEDESCRIPTIONThe STP25NM60N is realized with the second generation of MDmesh Technology. This revolu-tionary MOSFET associates a new vertical struc-ture to the Company's strip layout to yield the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high ef-ficiency convertersAPPLICATIONSThe MDmesh™ II family is very suitable for in-crease the power density of high voltage convert-ers allowing system miniaturization and higher efficiencies.Table 2: Order CodeTYPE V DSS (@Tjmax)R DS(on)I D STB25NM60N-1STF25NM60N STP25NM60N STW25NM60N STB25NM60N650 V 650 V 650 V 650 V 650 V< 0.170 Ω< 0.170 Ω< 0.170 Ω< 0.170 Ω< 0.170 Ω20 A 20(*) A 20 A 20 A 20 ASALES TYPE MARKING PACKAGE PACKAGINGSTB25NM60N-1B25NM60N I ²PAK TUBE STF25NM60N F25NM60N TO-220FP TUBE STP25NM60N P25NM60N TO-220TUBE STW25NM60N W25NM60N TO-247TUBE STB25NM60NB25NM60ND ²PAKTAPE & REELRev. 4STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N2/12Table 3: Absolute Maximum ratings(*) Limited only by maximum temperature allowed (1) Pulse width limited by safe operating area(2) I SD ≤ 20 A, di/dt ≤ 400 A/µs, V DD =80%V (BR)DSS .Table 4: Thermal DataTable 5: Avalanche CharacteristicsELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)Table 6: On /Off(2) Characteristic value at turn off on inductive loadSymbolParameterValueUnitTO-220/I²PAK TO-247/D²PAKTO-220FPV DS Drain-source Voltage (V GS = 0)600V V DGR Drain-gate Voltage (R GS = 20 k Ω)600V V GS Gate- source Voltage± 25V I D Drain Current (continuous) at T C = 25°C 2020 (*)A I D Drain Current (continuous) at T C = 100°C 12.812.8 (*)A I DM (1)Drain Current (pulsed)8080 (*)A P TOT Total Dissipation at T C = 25°C 16040W Derating Factor1.280.32W/°C dv/dt (2)Peak Diode Recovery voltage slope TBD V/ns T stg Storage Temperature– 55 to 150°C T jMax. Operating Junction Temperature150°C TO-220/I²PAK TO-247/D²PAKTO-220FPRthj-case Thermal Resistance Junction-case Max 0.783.1°C/W Rthj-ambThermal Resistance Junction-ambient Max62.5°C/W T lMaximum Lead Temperature For Soldering Purpose300°CSymbol ParameterMax Value Unit I AS Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)TBD A E ASSingle Pulse Avalanche Energy(starting T j = 25 °C, I D = I AS , V DD = 50 V)TBDmJSymbol ParameterTest ConditionsValue UnitMin.Typ.Max.V (BR)DSS Drain-source Breakdown VoltageI D = 1 mA, V GS = 0600V dv/dt(2)Drain Source Voltage SlopeVdd=TBD, Id=TBD, Vgs=TBD TBDV/ns I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max RatingV DS = Max Rating, T C = 125°C 110µA µA I GSS Gate-body Leakage Current (V DS = 0)V GS = ± 20 V100nA V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 234V R DS(onStatic Drain-source On ResistanceV GS = 10 V, I D = 10 A0.1400.170Ω3/12STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60NELECTRICAL CHARACTERISTICS (CONTINUED)Table 7: DynamicTable 8: Source Drain Diode(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(2) Pulse width limited by safe operating area.(3) C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS .Symbol ParameterTest Conditions Min.Typ.Max.Unit g fs (1)Forward Transconductance V DS = 15V , I D = 10A 17S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V, f = 1 MHz, V GS = 0256551177pF pF pF C OSS eq (3).Equivalent Output CapacitanceV GS = 0 V, V DS = 0 to 480 V TBD pF R GGate Input Resistancef=1 MHz Gate DC Bias = 0Test Signal Level = 20mV Open Drain2Ωt d(on)t r t d(off)t f Turn-on Delay Time Rise TimeTurn-off-Delay Time Fall TimeV DD = 300 V, I D = 10 A, R G = 4.7 Ω, V GS = 10 V (see Figure 4)TBD TBD TBD TBD ns ns ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 480 V, I D = 20 A,V GS = 10 V (see Figure 7)93TBD TBDnC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (2)Source-drain CurrentSource-drain Current (pulsed)2080A A V SD (1)Forward On Voltage I SD = 20 A, V GS = 0 1.3V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 25 A, di/dt = 100 A/µs V DD = 100V (see Figure 5)TBD TBD TBD ns µC A t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 25 A, di/dt = 100 A/µs V DD = 100V, T j = 150°C (see Figure 5)TBD TBD TBDns µC ASTP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60NFigure 3: Unclamped Inductive Load Test Cir-cuitFigure 4: Switching Times Test Circuit For Re-sistive Load Figure 5: Test Circuit For Inductive Load Switching and Diode Recovery TimesFigure 6: Unclamped Inductive WafeformFigure 7: Gate Charge Test CircuitSTP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N5/12STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N6/12STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N7/12STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N8/12STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N9/12STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N10/12TAPE AND REEL SHIPMENTD2PAK FOOTPRINT* on sales typeDIM.mm inchMIN.MAX.MIN.MAX.A33012.992B 1.50.059C12.813.20.5040.520D20.20795G24.426.40.960 1.039N100 3.937T30.4 1.197BASE QTY BULK QTY10001000REEL MECHANICAL DATA DIM.mm inchMIN.MAX.MIN.MAX.A010.510.70.4130.421B015.715.90.6180.626D 1.5 1.60.0590.063D1 1.59 1.610.0620.063E 1.65 1.850.0650.073F11.411.60.4490.456K0 4.8 5.00.1890.197P0 3.9 4.10.1530.161P111.912.10.4680.476P2 1.9 2.10.0750.082R50 1.574T0.250.350.00980.0137W23.724.30.9330.956TAPE MECHANICAL DATASTP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N Table 9: Revision HistoryDate Revision Description of Changes 30-Nov-20041First Release.22-Mar-20052Modified title23-May-20053Inserted some values in Tab708-Jun-20054Inserted new row in table 611/12STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60NInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronicsAll other names are the property of their respective owners© 2005 STMicroelectronics - All Rights ReservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America12/12。

FCH47N60F中文资料

FCH47N60F 600V N-Channel MOSFETTMMay 2006SuperFETFCH47N60F600V N-Channel MOSFETFeatures•650V@T J = 150°C •Typ. R DS(on) = 0.062Ω•Fast Recovery Type ( t rr = 240ns)•Ultra Low Gate Charge (typ. Q g = 210nC)•Low Effective Output Capacitance (typ. C oss eff. = 420pF)•100% avalanche testedDescriptionSuperFET TM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.G SDTO-247DGSAbsolute Maximum Ratings SymbolParameterFCH47N60FUnitV DSS Drain-Source Voltage 600V I D Drain Current - Continuous (T C = 25°C)- Continuous (T C = 100°C)4729.7A A I DM Drain Current - Pulsed(Note 1)141A V GSS Gate-Source voltage± 30V E AS Single Pulsed Avalanche Energy (Note 2)1800mJ I AR Avalanche Current(Note 1)47A E AR Repetitive Avalanche Energy (Note 1)41.7mJ dv/dt Peak Diode Recovery dv/dt (Note 3)50V/ns P D Power Dissipation(T C = 25°C)- Derate above 25°C4173.33W W/°C T J, T STG Operating and Storage Temperature Range -55 to +150°C T LMaximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds300°CThermal CharacteristicsSymbolParameterTyp.Max.UnitR θJC Thermal Resistance, Junction-to-Case --0.3°C/W R θCS Thermal Resistance, Case-to-Sink 0.24--°C /W R θJAThermal Resistance, Junction-to-Ambient--41.7°C/WFCH47N60F 600V N-Channel MOSFETPackage Marking and Ordering InformationDevice MarkingDevicePackageReel SizeTape WidthQuantityFCH47N60FFCH47N60FTO-247--30Electrical Characteristics T C= 25°C unless otherwise notedSymbolParameterConditionsMinTypMax UnitsOff Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0V, I D = 250μA, T J = 25°C 600----V V GS = 0V, I D = 250μA, T J = 150°C --650--V ΔBV DSS / ΔT J Breakdown Voltage Temperature CoefficientI D = 250μA, Referenced to 25°C --0.6--V/°C BV DS Drain-Source Avalanche Breakdown VoltageV GS = 0V, I D = 47A --700--V I DSS Zero Gate Voltage Drain Current V DS = 600V, V GS = 0V V DS = 480V, T C = 125°C --------10100μA μA I GSSF Gate-Body Leakage Current, Forward V GS = 30V, V DS = 0V ----100nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30V, V DS = 0V -----100nA On CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250μA 3.0-- 5.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10V, I D = 23.5A --0.0620.073Ωg FS Forward Transconductance V DS = 40V, I D = 23.5A (Note 4)--40--S Dynamic CharacteristicsC iss Input Capacitance V DS = 25V, V GS = 0V,f = 1.0MHz--59008000pF C oss Output Capacitance--32004200pF C rss Reverse Transfer Capacitance --250--pF C oss Output CapacitanceV DS = 480V, V GS = 0V, f = 1.0MHz --160--pF C oss eff.Effective Output Capacitance V DS = 0V to 400V, V GS = 0V --420--pF Switching Characteristicst d(on)Turn-On Delay Time V DD = 300V, I D = 47A R G = 25Ω(Note 4, 5)--185430ns t r Turn-On Rise Time --210450ns t d(off)Turn-Off Delay Time --5201100ns t f Turn-Off Fall Time --75160ns Q g Total Gate Charge V DS = 480V, I D = 47A V GS = 10V(Note 4, 5)--210270nC Q gs Gate-Source Charge --38--nC Q gd Gate-Drain Charge--110--nC Drain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----47A I SM Maximum Pulsed Drain-Source Diode Forward Current ----141A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 47A---- 1.4V t rr Reverse Recovery Time V GS = 0V, I S = 47AdI F /dt =100A/μs (Note 4)--240--ns Q rrReverse Recovery Charge--2.04--μCNOTES:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. I AS = 18A, V DD = 50V, R G = 25Ω, Starting T J = 25°C3. I SD ≤ 47A, di/dt ≤ 1,200A/μs, V DD ≤ BV DSS , Starting T J = 25°C4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical CharacteristicsFCH47N60F 600V N-Channel MOSFETFCH47N60F 600V N-Channel MOSFETFCH47N60F 600V N-Channel MOSFET Gate Charge Test Circuit & WaveformResistive Switching Test Circuit & WaveformsUnclamped Inductive Switching Test Circuit & WaveformsFCH47N60F 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & WaveformsFCH47N60F 600V N-Channel MOSFETFCH47N60F 600V N-Channel MOSFETRev. I19TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsACEx™ActiveArray™Bottomless™Build it Now™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect ™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX ™MSXPro ™OCX ™OCXPro ™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure ™RapidConnect ™µSerDes ™ScalarPump ™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TCM™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®UniFET™VCX™Wire™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™Datasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.。

士兰微SVF4N60规格书(最新版)

产品规格分类
产品名称封装形式打印名称材料
包装 SVF4N60T TO-220-3L SVF4N60T 无铅料管 SVF4N60F TO-220F-3L SVF4N60F 无铅料管 SVF4N60FG TO-220F-3L SVF4N60FG 无卤料管 4A 、600V N 沟道增强型场效应管
描述
SVF4N60D/F/FG/T/K/M/MJ/MJG N 沟道增强型高压功率MOS 场效应晶体管采用士兰微电子的F-Cell TM 平面高压VDMOS 工艺技术制造。

先进的工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿
极限参数(除非特殊说明，T
=25°C)
C
源-漏二极管特性参数
漏极电流– I D(A)源漏电压– V SD(V)
典型特性曲线（续）
图5. 电容特性图6. 电荷量特性
10101010
漏源电压 - V DS(V)10101010
漏源电压 - V DS(V)
典型特性曲线（续）
3
图9-4. 最大安全工作区域(SVF4N60MJ(G))图9-3. 最大安全工作区域(SVF4N60D/M)
典型测试电路
12V
栅极电荷量测试电路及波形图
封装外形图
封装外形图（续）
封装外形图（续）。

ST-K4中文资料

[ 148 ]201 McLean Boulevard •Paterson, New Jersey 07504 • T el: (973) 881-8800• Fax: (973) 881-8361E-Mail: sales@ • World Wide Web: NOTE:All devices shown have 1 Watt Power RatingTemperature range for plastic package is -25o C to +85o CL EADLESS S URFACE-M OUNT M ODELSPrimary PrimaryPrimary Secondary Secondary Secondary DOTCenter-Tap DOT Center-TapPIN-OUT TABLE# 146-312# 246-31-For pin location and package outline drawings, see back pages.FIGURE 2FIGURE 1[ 149 ]201 McLean Boulevard • Paterson, New Jersey 07504 • Tel: (973) 881-8800 • Fax: (973) 881-8361E-Mail: sales@ • World Wide Web: Primary PrimaryPrimary Secondary Secondary Secondary DOTCenter-Tap DOT Center-Tap#146-312# 246-31-#3465312# 46*3-1*3-* Pin must be groundedPIN-OUT TABLEL EADED S URFACE-M OUNT M ODELSNOTE:All devices shown have 1 Watt Power RatingTemperature range for plastic package is -25o C to +85o CFIGURE 2FIGURE 1FIGURE 3FIGURE 4For pin location and package outline drawings, see back pages.[ 150 ]201 McLean Boulevard• Paterson, New Jersey 07504 • Tel: (973) 881-8800 • Fax: (973) 881-8361E-Mail: sales@ • World Wide Web: M INIATURE 8 P IN - R ELAY H EADERNOTE:All devices shown have 1 Watt Power RatingPIN-OUT TABLEPrimary Primary Primary Secondary Secondary Secondary Case DOT Center-Tap DOT Center-Tap Ground#11*6-2*6-7,8#215-2647,8#315-26-7,8#413-24-7,8* Pin must be groundedFor pin location and package outline drawings, see back pages.FIGURE 2FIGURE 1FIGURE 3FIGURE 4[ 151 ]201 McLean Boulevard • Paterson, New Jersey 07504 • T el: (973) 881-8800 • Fax: (973) 881-8361E-Mail: sales@ • World Wide Web: NOTE:All devices shown have 1 Watt Power RatingNOTE:All devices shown have 1 Watt Power Rating8 P IN - M INIATURE R ELAY H EADERC ONNECTORIZED P ACKAGEIMPEDANCE CENTER FREQUENCYBANDWIDTH (MHz) forFIGURE PIN-OUT RATIO TAP INSERTION-LOSS(See PACKAGE(See MODELPRI : SECPRI SEC(MHz)1dB2dB3dBBelow)Below)IMPEDANCECENTER FREQUENCYBANDWIDTH (MHz) forFIGURE PIN-OUT RATIO TAP INSERTION-LOSS(See PACKAGE(See MODELPRI : SECPRI SEC(MHz)1dB2dB3dBBelow)Below)For pin location and package outline drawings, see back pages.PIN-OUT TABLEPrimary Primary Primary Secondary Secondary Secondary Case DOT Center-Tap DOT Center-Tap Ground #115-2647,8# 21 5-2 6-7,8# 3-Balanced-- Unbalanced- -# 41*6-2*6-7.8* Pin must be groundedFIGURE 2FIGURE 1FIGURE 3FIGURE 4FIGURE 51:2.5No Yes 0.01-1000.05-200.02-500.01-10011071TP-2C11:4No No 0.02-2000.1-1000.05-1500.02-20021072TP-2K21:1.5No No 0.1-4005-1001-2000.1-40041184TK-701B 1:1No No 0.01-1250.1-250.05-500.01-12551183TK-702B 1:1No No 0.2-5001-1000.5-3000.2-50051183TK-703B[ 152 ]201 McLean Boulevard • Paterson, New Jersey 07504 • Tel: (973) 881-8800 • Fax: (973) 881-8361E-Mail: sales@ • World Wide Web: NOTE:All devices shown have 1 Watt Power RatingTemperature range for plastic package is -25o C to +85o CP LASTIC F LAT -P ACK M ODELSPIN-OUT TABLE* Pin must be groundedPrimary Primary Primary Secondary Secondary Secondary DOTCenter-Tap DOT Center-Tap #146-312# 26*3-1 *3-# 34 653 12# 446-31-For pin location and package outline drawings, see back pages.FIGURE 2FIGURE 1FIGURE 3FIGURE 4。

钛合金常用规格及性能用途之欧阳体创编

钛合金常用规格及性能用途TC4 / GR5 / Ti6AL4V 钛棒现货规格：直径2mm 2.5mm 3.0mm 3.5mm 4.0mm 5.0mm 6.0mm7.0mm 8mm 9mm 10mm直径12mm 15mm 16mm 18mm20mm 25mm 30mm 35mm 40mm 45mm 50mm 55mm直径60mm 65mm 70mm 75mm80mm 85mm 90mm 100mm 105mm 110mm 120mmTC4 / GR5 / Ti6AL4V 钛棒现货规格：厚度1mm 1.5mm 2mm 2.5mm 3mm 4mm 4.5mm 5mm 6mm 7mm 8mm 10mm 12mm 14mm厚度16mm 18mm 20mm 25mm 30mm 32mm 35mm 50mm45mm 50mm 60mm 70mm 80mm 90mm钛合金优越的特性：1耐酸碱腐蚀，耐海水腐蚀，耐污水腐蚀；2密度小（4.51），轻；3无磁性；广钛金属4在-253°-600°之间使用，他的抗拉强度，在金属中，几乎是最高的。

应用举例:工业上除采用工业纯钛制造零件以外，大量使用的是钛合金。

它在航空、航天、化工、造船、冶金、电子、医疗、石油、医药、军工等工业部门获得日益广泛的应用,制造燃气轮机部件。

【钛合金的性能】钛是一种新型金属，钛的性能与所含碳、氮、氢、氧等杂质含量有关，最纯的碘化钛杂质含量不超过0.1％，但其强度低、塑性高。

99.5％工业纯钛的性能为：密度ρ=4.5g/cm3，熔点为172矽钛合金耐磨地坪5℃，导热系数λ=15.24W/(m.K)，抗拉强度σb=539MPa，伸长率δ=25％，断面收缩率ψ=25％，弹性模量E=1.078×105MPa，硬度HB195。

(1)强度高钛合金的密度一般在4.5g/cm3左右，仅为钢的60％，纯钛的强度才接近普通钢的强度，一些高强度钛合金超过了许多合金结构钢的强度。

STW26NM60中文资料

STW26NM60中文资料1/8September 2002STW26NM60N-CHANNEL 600V - 0.125? - 26A TO-247Zener-Protected MDmesh?Power MOSFETn TYPICAL R DS (on) = 0.125?n HIGH dv/dt AND AVALANCHE CAPABILITIES n IMPROVED ESD CAPABILITYnLOW INPUT CAPACITANCE AND GATE CHARGEnLOW GATE INPUT RESISTANCEDESCRIPTIONThe MDmesh ? is a new revolutionary MOSFET technology that associates the Multiple Drain pro-cess with the Company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.APPLICATIONSThe MDmesh? family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.ORDERING INFORMATIONTYPEV DSS R DS(on)I D STW26NM60600 V< 0.135 ?30 ASALES TYPE MARKING PACKAGEPACKAGINGSTW26NM60W26NM60TO-247TUBETO-247STW26NM602/8ABSOLUTE MAXIMUM RATINGS(l ) Pulse width limited by safe operating area(1) I SD ≤26A, di/dt ≤200A/μs, V DD ≤ V (BR)DSS , T j ≤ T JMAX.THERMAL DATAAVALANCHE CHARACTERISTICSGATE-SOURCE ZENER DIODEPROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.Symbol ParameterValue Unit V DS Drain-source Voltage (V GS = 0)600V V DGR Drain-gate Voltage (R GS = 20 k ?)600V V GS Gate- source Voltage± 30V I D Drain Current (continuous) at T C = 25°C 30A I D Drain Current (continuous) at T C = 100°C 18.9A I DM (l )Drain Current (pulsed)120A P TOT Total Dissipation at T C = 25°C 313W Derating Factor2.5W/°C V ESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5K ?)6000V dv/dt (1)Peak Diode Recovery voltage slope 15V/ns T j T stgOperating Junction Temperature Storage Temperature-55 to 150°CRthj-case Thermal Resistance Junction-case Max 0.4°C/W Rthj-ambThermal Resistance Junction-ambient Max62.5°C/W T lMaximum Lead Temperature For Soldering Purpose300°CSymbol ParameterMax ValueUnit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)13A E ASSingle Pulse Avalanche Energy(starting T j = 25 °C, I D = I AR , V DD = 50 V)740mJSymbol ParameterTest Conditions Min.Typ.Max.Unit BV GSOGate-Source Breakdown VoltageIgss=± 1mA (Open Drain)30V3/8STW26NM60ELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFFDYNAMICSWITCHING ONSWITCHING OFFSOURCE DRAIN DIODENote: 1.Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.2.Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 μA, V GS = 0600V I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max RatingV DS = Max Rating, T C = 125 °C 10100μA μA I GSS Gate-body Leakage Current (V DS = 0)V GS = ± 20V±10μA V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250μA 345V R DS(on)Static Drain-source On ResistanceV GS = 10V, I D = 13 A0.1250.135Symbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V DS = 15 V , I D =13 A20S C iss C oss C rssInput Capacitance Output Capacitance Reverse Transfer CapacitanceV DS = 25V, f = 1 MHz, V GS = 0290090040pF pF pFSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r Turn-on Delay Time Rise TimeV DD = 300V, I D = 13 A R G =4.7? V GS = 10 V(Resistive Load see, Figure 3)3522ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 480V, I D = 26 A,V GS = 10V732037102nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t r(Voff)t f t cOff-voltage Rise Time Fall TimeCross-over TimeV DD = 480V, I D = 26 A, R G =4.7?, V GS = 10V(Inductive Load see, Figure 5)142040ns ns nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (2)Source-drain CurrentSource-drain Current (pulsed)26104A A V SD (1)Forward On Voltage I SD = 26 A, V GS = 0 1.5V t rr Q rr I RRM Reverse Recovery Time Reverse RecoveryCharge Reverse Recovery Current I SD = 26 A, di/dt = 100A/μs V DD = 100 V, T j = 25°C (see test circuit, Figure 5)450730.5ns μC A t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 26 A, di/dt = 100A/μs V DD = 100 V, T j = 150°C (see test circuit, Figure 5)560932.5ns μC ASTW26NM604/85/8STW26NM60Source-drain Diode Forward Characteristics STW26NM606/8Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery TimesFig. 4: Gate Charge test CircuitFig. 2: Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test CircuitFig. 3: Switching Times Test Circuit ForResistive LoadSTW26NM607/8STW26NM608/8Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for anyinfringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.。

st4螺纹参数

st4螺纹参数概述在机械设计中，螺纹是一种常用的连接方式，用于将两个部件紧密地固定在一起。

ST4螺纹是一种标准化的螺纹，具有一定的参数要求，本文将对ST4螺纹的参数进行详细介绍和分析。

ST4螺纹的基本参数ST4螺纹是一种直径为4毫米的内外螺纹，在设计和制造时需要考虑以下几个基本参数：1.螺距（Pitch）：表示螺纹的螺距，即螺纹的螺旋线每转一周所前进的距离。

在ST4螺纹中，螺距为0.7毫米。

2.螺纹高度（Height）：螺纹高度是指螺纹的垂直厚度，即从螺纹顶部到底部的距离。

在ST4螺纹中，螺纹高度约为6.63毫米。

3.螺纹外径（External Diameter）：螺纹外径是指螺纹的最大直径，也称为大径。

对于ST4螺纹来说，螺纹外径为4毫米。

4.螺纹内径（Internal Diameter）：螺纹内径是指螺纹的最小直径，也称为小径。

在ST4螺纹中，螺纹内径为3.64毫米，留有一定余量以便容纳螺钉或螺母。

5.螺纹角度（Thread Angle）：螺纹角度是指螺纹螺旋线与螺杆轴线之间的夹角。

ST4螺纹的螺纹角度为60度，这是一种常见的螺纹角度。

以上参数决定了ST4螺纹的基本几何形状和尺寸，设计和制造时需要严格按照这些参数进行选择和计算。

ST4螺纹的材料和强度除了基本参数外，ST4螺纹的材料和强度也是设计和制造时需要考虑的关键因素。

材料的选择应根据具体应用环境和要求，常见的材料包括碳钢、不锈钢和合金钢等。

螺纹的强度主要由材料的强度和几何形状参数共同决定。

设计和制造时需要进行强度计算，以保证螺纹在使用中不会发生破坏或松动。

常用的强度计算方法包括拉伸强度计算、剪切强度计算和扭转强度计算等。

ST4螺纹的应用和注意事项ST4螺纹在工业和日常生活中广泛应用，常见的应用场景包括机械装配、电子设备、汽车制造和家居装饰等。

使用ST4螺纹时需要注意以下几点：1.螺纹的环境和条件：在选择和使用ST4螺纹时，需要考虑螺纹所处的环境和工作条件，以确定材料和强度要求。

强威粉StronWiTM

强威粉StronWi 基本力学性能1，强威粉高性能产品StronWi KTC 在SBR 检验性能序号检验项目检验结果检验标准1硫化仪153℃T10 15min 00s GB/T16584-1996T50 18min 05s T90 24min 52s FL N ·m 0.550 Fmax N ·m1.235 2 门尼焦烧120℃T5 105 minGB/T1233-2008△T 30- 3 门尼粘度50ML (1+4)100℃ 48GB/T1232.1-2000 4 硫化153℃ 30min 40min GB/T6038-2006 5 邵尔A 硬度 52 53 GB/T531.1-20086 扯断伸长率，% 883 748 GB/T528-19987 拉伸强度，MPa 19.5 16.98 300%定伸应力，MPa 2.65 3.189 500%定伸应力，MPa 4.66 5.37 10 扯断永久变形，% 33 22 11撕裂强度， kN/m3534GB/T529-2008 注：配方SBR1500：100；氧化锌：3；硬脂酸1；硫磺1.75；促NS 1；填料50；KTC 为工业品级产品StronWi KTC 是为满足对于力学性能有更高要求的客户而推出的产品，补强性能优异。

2，强威粉TNK 在SBR 中变量性能试验150℃×35分钟硫化★ 强威粉在橡胶领域的应用特性 ● 粒度细至纳米级，目数20,000目以上 ● 优异综合性能，高性价比，补强剂的又一新的选择 ● 与碳黑、白炭黑配合使用，产生1+1﹥2的效果 ● 表面碱性，缩短硫化时间，保持良好分散性能 ● 超高填充下仍旧保持低硬度、高补强、低门尼粘度 ● 非常容易挤出、保持制品高流动性，可代替进口产品，如N85 ● 赋予制品良好光泽和光滑表面、优异的绝缘性能 ● 提高橡胶制品的耐热性能，并具协从阻燃性能● 补强强效果很好，与N550碳黑相当。

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1/6ADVANCED DATAJanuary 2003STW47NM60N-CHANNEL 600V -0.075Ω -47A TO-247MDmesh™Power MOSFET(1)I SD ≤47A,di/dt ≤400A/µs,V DD ≤V (BR)DSS ,T j ≤T JMAX.TYPICAL R DS (on)=0.075ΩHIGH dv/dt AND AVALANCHE CAPABILITIES 100%AVALANCHE TESTEDLOW INPUT CAPACITANCE AND GATECHARGELOW GATE INPUT RESISTANCETIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDSDESCRIPTIONThis improved version of MDmesh™which isbased on Multiple Drain process represents the new benchmark in high voltage MOSFETs.The resulting product exhibits even lower on-resistance,impres-sively high dv/dt and excellent avalanche character-istics.The adoption of the Company’s proprietary strip technique yields overall performances that are significantly better than that of similar competition’s products.APPLICATIONSThe MDmesh™family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating areaTYPE V DSS R DS(on)R ds(on)*Q g I D STW47NM60600V<0.09Ω7.2Ω*nC47ASymbol ParameterValue Unit V DS Drain-source Voltage (V GS =0)600V V DGR Drain-gate Voltage (R GS =20k Ω)600V V GS Gate-source Voltage±30V I D Drain Current (continuous)at T C =25°C 47A I D Drain Current (continuous)at T C =100°C 28A I DM ( )Drain Current (pulsed)180A P TOT Total Dissipation at T C =25°C 417W Derating Factor3.33W/°C dv/dt (1)Peak Diode Recovery voltage slope 15V/ns T stg Storage Temperature–65to 150°C T jMax.Operating Junction Temperature150°CSTW47NM602/6THERMAL DATAAVALANCHE CHARACTERISTICSELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)OFFON (1)DYNAMIC1.Pulsed:Pulse duration =300µs,duty cycle 1.5%.2.C oss eq.is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0to 80%V DSSRthj-case Thermal Resistance Junction-case Max 0.3°C/W Rthj-ambThermal Resistance Junction-ambientMax30°C/W T lMaximum Lead Temperature For Soldering Purpose300°CSymbol ParameterMax ValueUnit I AR Avalanche Current,Repetitive or Not-Repetitive (pulse width limited by T j max)15A E ASSingle Pulse Avalanche Energy(starting T j =25°C,I D =I AR ,V DD =35V)850mJSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D =250µA,V GS =0600V I DSS Zero Gate VoltageDrain Current (V GS =0)V DS =Max Rating10µA V DS =Max Rating,T C =125°C 100µA I GSSGate-body Leakage Current (V DS =0)V GS =±30V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS =V GS ,I D =250µA 345V R DS(on)Static Drain-source On ResistanceV GS =10V,I D =23.5A0.0750.09ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V DS >I D(on)x R DS(on)max,I D =23.5A15S C iss Input Capacitance V DS =25V,f =1MHz,V GS =03800pF C oss Output Capacitance 1250pF C rss Reverse Transfer Capacitance 46pF C oss eq.(2)Equivalent Output CapacitanceV GS =0V,V DS =0V to 480V 340pF R GGate Input Resistancef=1MHz Gate DC Bias =0Test Signal Level =20mV Open Drain1.4Ω3/6STW47NM60ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSWITCHING OFFSOURCE DRAIN DIODENote: 1.Pulsed:Pulse duration =300µs,duty cycle 1.5%.2.Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)Turn-on Delay Time V DD =250V,I D =23.5A R G =4.7ΩV GS =10V (see test circuit,Figure 3)30ns t r Rise Time 20ns Q g Total Gate Charge V DD =400V,I D =47A,V GS =10V96134nC Q gs Gate-Source Charge 31nC Q gdGate-Drain Charge43nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t r(Voff)Off-voltage Rise TimeV DD =400V,I D =47A,R G =4.7Ω,V GS =10V (see test circuit,Figure 5)16ns t f Fall Time 23ns t cCross-over Time40nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD Source-drain Current 47A I SDM (2)Source-drain Current (pulsed)180A V SD (1)Forward On Voltage I SD =47A,V GS =0 1.5V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD =47A,di/dt =100A/µs,V DD =100V,T j =25°C (see test circuit,Figure 5)5081040ns µC A t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD =47A,di/dt =100A/µs,V DD =100V,T j =150°C (see test circuit,Figure 5)6501443ns µC ASTW47NM604/6Fig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesFig.4:Gate Charge test CircuitFig.2:Unclamped Inductive WaveformFig.1:Unclamped Inductive Load TestCircuitFig.3:Switching Times Test Circuit For ResistiveLoadSTW47NM605/6STW47NM606/6Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.© The ST logo is a registered trademark of STMicroelectronics© 2002 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.© 。