P6SMB39AT3中文资料
P6SMBJ85A中文资料
V C @ IPP V A
PAC K AGE
600W Transient Voltage S uppressor
P 6S MB J5.0(C ) P 6S MB J5.0(C )A P 6S MB J6.0(C ) P 6S MB J6.0(C )A P 6S MB J6.5(C ) P 6S MB J6.5(C )A P 6S MB J7.0(C ) P 6S MB J7.0(C )A P 6S MB J7.5(C ) P 6S MB J7.5(C )A P 6S MB J8.0(C ) P 6S MB J8.0(C )A P 6S MB J8.5(C ) P 6S MB J8.5(C )A P 6S MB J9.0(C ) P 6S MB J9.0(C )A P 6S MB J10(C ) P 6S MB J10(C )A P 6S MB J11(C ) P 6S MB J11(C )A P 6S MB J12(C ) P 6S MB J12(C )A P 6S MB J13(C ) P 6S MB J13(C )A P 6S MB J14(C ) P 6S MB J14(C )A P 6S MB J15(C ) P 6S MB J15(C )A P 6S MB J16(C ) P 6S MB J16(C )A P 6S MB J17(C ) P 6S MB J17(C )A P 6S MB J18(C ) P 6S MB J18(C )A P 6S MB J20(C ) P 6S MB J20(C )A P 6S MB J22(C ) P 6S MB J22(C )A P 6S MB J24(C ) P 6S MB J24(C )A P 6S MB J26(C ) P 6S MB J26(C )A P 6S MB J28(C ) P 6S MB J28(C )A P 6S MB J30(C ) P 6S MB J30(C )A P 6S MB J33(C ) P 6S MB J33(C )A P 6S MB J36(C ) P 6S MB J36(C )A P 6S MB J40(C ) P 6S MB J40(C )A KD KE KF KG KH KK KL KM KN KP KQ KR KS KT KU KV KW KX KY KZ LD LE LF LG LH LK LL LM LN LP LQ LR LS LT LU LV LW LX LZ LY MD ME MF MG MH MK ML MM MN MP MQ MR AD AE AF AG AH AK AL AM AN AP AQ AR AS AT AU AV AW AX AY AZ BD BE BF BG BH BK BL BM BN BP BQ BR BS BT BU BV BW BX BZ BY CD CE CF CG CH CK CL CM CN CP CQ CR 5.0 5.0 6.0 6.0 6.5 6.5 7.0 7.0 7.5 7.5 8.0 8.0 8.5 8.5 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 28 28 30 30 33 33 36 36 40 40 6.40 6.40 6.67 6.67 7.22 7.22 7.78 7.78 8.33 8.33 8.89 8.89 9.44 9.44 10.0 10.0 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 40.0 40.0 44.4 44.4 7.55 7.25 8.45 7.67 9.14 8.30 9.86 8.95 10.67 9.58 11.30 10.23 11.92 10.82 12.6 11.5 14.1 12.8 15.4 14.0 16.9 15.3 18.2 16.5 19.8 17.9 21.1 19.2 22.6 20.5 23.9 21.7 25.3 23.3 28.1 25.5 30.9 28.0 33.8 30.7 36.6 33.2 39.4 35.8 42.2 38.3 46.5 42.2 50.7 46.0 56.3 51.1 10 10 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 800 800 800 800 500 500 200 200 100 100 50 50 10 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 1600 1600 1600 1600 1000 1000 400 400 200 200 100 100 20 20 10 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 9.6 9.2 11.4 10.3 12.3 11.2 13.3 12.0 14.3 12.9 15.0 13.6 15.9 14.4 16.9 15.4 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.0 45.4 53.5 48.4 59.0 53.3 64.3 58.1 71.4 64.5 62.5 65.2 52.6 58.3 48.7 53.6 45.1 50.0 42.0 46.5 40.0 44.1 37.7 41.7 35.5 39.0 31.9 35.3 29.9 33.0 27.3 30.2 25.2 27.9 23.3 25.8 22.3 24.0 20.8 23.1 19.7 21.7 18.6 20.5 16.7 18.5 15.2 16.9 14.0 15.4 12.4 14.2 12.0 13.2 11.2 12.4 10.2 11.3 9.3 10.3 8.4 9.3 S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A S MB /D O-214A A
1SMB6.5AT3中文资料(motorola)中文数据手册「EasyDatasheet - 矽搜」
值 （％）
50
半值 - RSM I 2
tP
0.1 0.1
µs
1 µs
10 µs 100µs
0
1毫秒 10毫秒
0
1
2
3
4
总磷,脉冲宽度
T,时间（ms）
160 C ° 140
A 120
图 1.脉冲额定值 Curve
图 2.脉冲波形 典型防护护电路
Zin
100
80
Vin
LOAD
VL
60
峰值脉冲4降0 容％ 峰值功20率或电流@ T = 25
性,如图4.
该装置中感应作用是由于实际导通 所需设备时间（时间去从零电流到全
电流）和引线电感.这种诱导效应产生
在两端电压设备过冲或
部件防护护,如图5最小化 这种过冲是在应用非常重要,因为
用于添加瞬变抑制器主要目是夹紧
电压尖峰.在SMB系列有一个很好反响 时间,通常为1纳秒和可以忽略不计电感.然而,
外部感应影响可能产生不能接受过
IPP
峰值脉冲电流 - 见图2
PP
峰值脉冲功率
IR
反向漏
600瓦峰值功率数据表 5-2
芯片中文手册,看全文,戳
一般数据 - 600瓦峰值功率
100 10 PP,峰值1 功率（KW）
非重复 脉冲波形
如图2中所示
tr 100
峰值 - IRSM
脉冲宽度（TP）定义 因为这地步PEAK 电流衰减到50％ IRSM.作者：
(Refer to Section 10 for more information on Packaging Specifications.)
0.089 2.261
P6SMB-Series规格书
MECHANICAL DATACase: SMB (DO-214AA)Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial gradeBase P/N-M3 - halogen-free, RoHS-compliant, commercial gradeBase P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified(“_X” denotes revision code e.g. A, B, ..... and only available for 250 V to 540 V type)Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker testPolarity: for uni-directional types the band denotes cathode end, no marking on bi-directional typesNotes(1) Non-repetitive current pulse, per fig. 3 and derated above T A= 25 °C per fig. 2 (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminalFEATURES• Low profile package• Ideal for automated placement • Glass passivated chip junction• Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %• Excellent clamping capability • Very fast response time• Low incremental surge resistance• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C• AEC-Q101 qualified available- Automotive ordering code: base P/NHE3 or P/NHM3(1) Pulse test: t p 50 ms(2) Surge current waveform per fig. 3 and derate per fig. 2(3) For bi-directional types with V WM of 10 V and less, the I D limit is doubled(4) All terms and symbols are consistent with ANSI/IEEE CA62.35(5) V F = 3.5 V at I F = 50 A (uni-directional only)RATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted)1001011007550250.10.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms0 25 50 75 100125 150 175 200t d - Pulse Width (s) TJ - Initial Temperature (°C) Fig. 1 - Peak Pulse Power Rating Curve Fig. 2 - Pulse Power or Current vs. Initial Junction TemperatureFig. 3 - Pulse Waveform Fig. 5 - Typical Transient Thermal Impedance Fig. 4 - Typical Junction Capacitance Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current PPPM-PeakPulsePower(kW)PeakPulsePower(PPP)orCurrent(IPP)DeratinginPercentage,%。
SM39R 系列 KBI 功能使用方法说明书
Specifications subject to change without notice, contact your sales representatives for the most recent information. SM39R 系列KBI 功能使用方法1 适用产品：1.1 SM39R16A2/ SM39R12A2/ SM39R08A22 KBI 使用说明：2.1 共有4个I/O 可致能为KBI 功能I/O 。
2.2 由Port 0共4个I/O ，分别对应至4个独立的旗标(KBF.0~ KBF.3)，且共享同一个中断向量位置(0x5B)。
2.3 可由程序设定为高准位或低准位触发。
2.4 当触发讯号输入至KBI 任一引脚，其对应的旗标将会被设置为”1”，并且进入中断子程序。
2.5 KBI 功能主要可做为2x2矩阵式键盘扫描，或其它应用。
Fig. Interrupts from KBI 4 inputsFig. keyboard input circuitrySpecifications subject to change without notice, contact your sales representatives for the most recent information.2.6 KBI 相关缓存器：KBI DescriptionDirect Bit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0RESETKBI function KBLS KBI level selection93h - - - - KBLS3KBLS2 KBLS1 KBLS000H KBE KBI input enable 94h - - - - KBE3KBE2 KBE1 KBE0 00H KBF KBI flag95h - - - -KBF3 KBF2 KBF1 KBF0 00HKBDKBI De-bouncecontrol register 96hKBDEN- - - - - KBD1 KBD0 00HIEN1Interrupt Enable 1registerB8H EXEN2 -IEIICIELVI IEKBI IEADC IESPI IEPWM 00H IRCONInterrupt requestregisterC0H EXF2 TF2 IICIFLVIIFKBIIFADCIF SPIIF PWMIF00HMnemonic: KBLS Address: 93h7 6 5 4 3 2 1 0 Reset-- - - KBLS3 KBLS2 KBLS1 KBLS0 00HKBLS.3: 触发准位设定位 (Keyboard Line 3 level selection bit) 0 : 设定为低准位触发 1 : 设定为高准位触发KBLS.2: 触发准位设定位 (Keyboard Line 2 level selection bit)0 : 设定为低准位触发 1 : 设定为高准位触发KBLS.1: 触发准位设定位 (Keyboard Line 1 level selection bit)0 : 设定为低准位触发 1 : 设定为高准位触发KBLS.0: 触发准位设定位 (Keyboard Line 0 level selection bit)0 : 设定为低准位触发 1 : 设定为高准位触发Mnemonic: KBE Address: 94h7 6 5 4 3 2 1 0 Reset-- - - KBE3 KBE2 KBE1 KBE0 00HKBE.3: 致能位 (Keyboard Line 3 enable bit)0 : KBI 禁能，预设为一般的出入埠(GPIO)1 : KBI 致能，当触发讯号输入时，KBF.7 = 1，会触发中断KBE.2: 致能位 (Keyboard Line 2 enable bit)0 : KBI 禁能，预设为一般的出入埠(GPIO)1 : KBI 致能，当触发讯号输入时，KBF.7 = 1，会触发中断KBE.1: 致能位 (Keyboard Line 1 enable bit)0 : KBI 禁能，预设为一般的出入埠(GPIO)1 : KBI 致能，当触发讯号输入时，KBF.7 = 1，会触发中断KBE.0: 致能位 (Keyboard Line 0 enable bit)0 : KBI 禁能，预设为一般的出入埠(GPIO)1 : KBI 致能，当触发讯号输入时，KBF.7 = 1，会触发中断Specifications subject to change without notice, contact your sales representatives for the most recent information.Mnemonic: KBF Address: 95h7 6 5 4 3 2 1 0 Reset - - - - KBF3 KBF2 KBF1 KBF0 00HKBF.3: KBI 触发旗标 (Keyboard Line 3 flag)1: 当KBI3侦测到输入讯号时，KBF.3由硬件设为”1”，并产生KBI 中断； 0: 必须由软件清除为”0”KBF.2: KBI 触发旗标 (Keyboard Line 2 flag)1: 当KBI2侦测到输入讯号时，KBF.2由硬件设为”1”，并产生KBI 中断； 0: 必须由软件清除为”0”KBF.1: KBI 触发旗标 (Keyboard Line 1 flag)1: 当KBI1侦测到输入讯号时，KBF.1由硬件设为”1”，并产生KBI 中断； 0: 必须由软件清除为”0”KBF.0: KBI 触发旗标 (Keyboard Line 0 flag)1: 当KBI0侦测到输入讯号时，KBF.0由硬件设为”1”，并产生KBI 中断； 0: 必须由软件清除为”0”Mnemonic: KBD Address: 96h7 6 5 4 3 2 1 0 Reset KBDEN - - - - - KBD1 KBD0 00HKBDEN: 除弹跳功能致能位(Enable KBI de-bounce function).预设为致能(The default KBI function is enabled). KBDEN = 0, 致能除弹跳功能 KBDEN = 1, 禁能除弹跳功能KBD[1:0]: 除弹跳时间设定位. 若KBDEN = “0”，则预设为320 ms.KBD[1:0] = 00, 除弹跳时间为320 ms. KBD[1:0] = 01, 除弹跳时间为160 ms. KBD[1:0] = 10, 除弹跳时间为80 ms. KBD[1:0] = 11, 除弹跳时间为40 ms.Mnemonic: IEN1 Address: B8h7 6 5 4 3 2 1 0 Reset EXEN2 - IEIIC IELVI IEKBIIEADC IESPI IEPWM 00HIEKBI: KBI interrupt enable.IEKBI = 0 – Disable KBI interrupt. IEKBI = 1 – Enable KBI interrupt.Mnemonic: IRCON Address: C0h7 6 5 4 3 2 1 0 Reset EXF2 TF2 IICIF LVIIF KBIIFADCIF SPIIF PWMIF 00HKBIIF: KBI interrupt flag. Must be cleared by software.Specifications subject to change without notice, contact your sales representatives for the most recent information.2.7 以下是KBI 相对应的中断向量表：Table 11-1: Interrupt vectorsInterrupt Request FlagsInterrupt VectorAddress Interrupt Number *(use Keil C Tool)IE0 – External interrupt 0 0003h 0 TF0 – Timer 0 interrupt 000Bh1IE1 – External interrupt 1 0013h 2 TF1 – Timer 1 interrupt 001Bh 3 RI/TI – Serial channel interrupt 0023h 4 TF2/EXF2 – Timer 2 interrupt 002Bh 5 PWMIF – PWM interrupt 0043h 8 SPIIF – SPI interrupt004Bh 9 ADCIF – A/D converter interrupt 0053h 10 KBIIF – keyboard Interface interrupt 005Bh 11 LVIIF – Low Voltage Interrupt 0063h 12 IICIF – IIC interrupt 006Bh 13 Comparator interrupt0093h18*See Keil C about C51 User’s Guide about Interrupt Function descriptionKBI 中断应用的参考程序：Description 1. KBI I/O 全部致能，Ch.0/Ch.1 高准位侦测 Ch.2/Ch.3 低准位侦测 2. De-bounce 时间为40msC 语言//==================================================================== // S Y N C M O S T E C H N O L O G Y//==================================================================== #include "SM39R16A2.h" #include " SM39R16A2_KBI.h "#define KBI_VECTOR 11 //KBI Interrupt Vevtor #define d_KBLS 0x03 //KBI Low/High level detection selection (0~0x0F) #define d_KBEX 0x0F //KBI Input Enable (0~0x0F) #define d_KBDEN 0x00 //KBI De-bounce Function Enable#define d_KBDS 0x03 //KBD[1:0] KBI De-bounce Time Selection (0~3) #define d_KBIIE 0x01 //KBI Interrupt Enable bitvoid KBI_initialize(void) //Initialize KBI {EA=0; //Disable All Interrupt Function IEKBI=(d_KBIIE); //Enable KBI Interrupt FunctionKBD=(d_KBDEN<<7)|(d_KBDS);//Enable KBI De-bounce and De-bounce Time FunctionSpecifications subject to change without notice, contact your sales representatives for the most recent information.KBLS=(d_KBLS); //KBI Input High/Low Level Select KBE=(d_KBEX); //KBI Input Channel Enable EA=1;//Enable All Interrupt}//---------------------------------------------------------------------// void KBI_Disable(void) {IEKBI=0; //Disable KBI Interrupt KBE=0; //Disable KBI Function }//---------------------------------------------------------------------//void KBI_ISR(void) interrupt KBI_VECTOR //KBI Interrupt Subroutine {switch(KBF)//Decision Occur Channel Flag (KBF){case 0x08: //KBI Channel 3 Occur Interrupt(KBF3) P1_3=0;break;case 0x04: //KBI Channel 2 Occur Interrupt(KBF2) P1_2=0;break;case 0x02: //KBI Channel 1 Occur Interrupt(KBF1) P1_1=0;break;case 0x01: //KBI Channel 0 Occur Interrupt(KBF0) P1_0=0;break;}KBF=0;////KBIIF=0; //Hardware Clear KBI Flag }void main(void)//Main Function Start{KBI_initialize(); //Call KBI Initial Subroutine while(1); //KBI_Disable(); }Specifications subject to change without notice, contact your sales representatives for the most recent information. Description1. KBI I/O 全部致能 Ch.0~3 高准位侦测 De-bounce 时间为320ms2. 当外部触发讯号至KBI I/O 时产生中断，并将结果显示于Port1汇编//==================================================================== // S Y N C M O S T E C H N O L O G Y//==================================================================== SFR KBLS = 0x93; ;Keyboard level selector register SFR KBE = 0x94; ;Keyboard input enable register SFR KBF = 0x95; ;Keyboard interrupt flag register SFR KBD = 0x96; ;de-bounce mechanism select SFR IEN0 = 0xA8; SFR IEN1 = 0xB8; SFR IRCON = 0xC0;ORG 0000H JMP BEGIN ORG 005BH JMP KBI_INT;================================================== ;KBI INTERRUPT INIT ROUTINE;================================================== BEGIN: MOV IEN0,#80H ;EA =1 MOV IEN1,#08H ;IEKBI =1 MOV KBD,#00H ;KBI de-bounce function and set de-bounce time is 320 ms. MOV KBLS,#0FFH ;High level detect ; MOV KBLS,#00H ;Low level detect MOV KBE, #0FFH ;KBI all pin enable MOV KBF, #00H ;KBI all flag clear JMP START;================================================== ;MAIN;================================================== START:JMP START;================================================== ;KBI INTERRUPT ROUTINE;================================================== KBI_INT:MOV P1,KBF MOV KBF, #00H ANL IRCON,#08H RETI END新茂国际科技希望能为客户减少开发的时间及辛劳，故提供 “Codzard 范例程序产生器＂可于 新茂网站首页>下载专区> 软件下载 内下载此软件，如有任何建议，请来信告知，谢谢! 销售客服电子信箱：******************.com.tw 技术支持电子信箱：********************.com.tw。
P6SEP-Me主板说明书1
P6SEP-Me主板手册V 1.0中国长城计算机深圳股份有限公司P/N:001-140400-94公告锂电池注意事项注意：错误更换电池，有引起爆炸的危险。
更换电池时，只能使用同类型电池。
电池含有锂，如使用、处理或处置不当，可能爆炸。
切勿将电池：沾水或浸入水中置于100℃以上高温（212℉）修理或拆开务必根据当地法令或法规要求处置旧电池。
激光产品证书声明如果您的个人计算机出厂时安装了CD-ROM驱动器，您的个人计算机系统就是激光产品。
CD-ROM驱动器符合GB7247对一类激光产品的要求。
一类激光产品不属于危险产品。
无线电干扰注意事项本设备经过测试发现符合GB9254关于无线电干扰的A或B级（见包装箱）的要求：这个设备能产生、利用和幅射射频能量，如果不按指令进行安装，会对无线电通讯造成干扰。
但是并不能保证在一个特定的安装中不造成干扰。
如果本设备对无线电和电视接收造成干扰（可以通过打开和关闭本设备来测试），建议使用者通过下列操作来解决：. 调整接收天线方向或位置增加本设备与接收器之间的距离将本设备与接收器插在不同的插座中向长城代理商或服务代表请求咨询和帮助必须使用合适的屏蔽和接地电线以及连接器以满足发射限制。
如果本设备是符合GB9254关于无线电干扰的A级要求的，请注意以下声明：电源线为了安全起见，随长城产品均提供经认证的有接地插头的电源线。
为了防止触电及系统稳定，请将电源线插头插在良好接地的插座中。
版权公告MS DOS6.22、Windows、Windows NT是微软公司的注册商标。
注意：1. 由于微机技术发展很快，本手册内容可能与您的主板稍有差别，望您能谅解。
2. 本手册可能存在的错误或疏漏，如有更新，恕不另行通知。
目录第一章介绍 (1)1.1关于说明书 (1)1.1.1主板特点 (1)1.1.2设置 (1)1.1.3软件 (1)1.2主板特点 (1)1.2.1低价格/高性能的解决方案 (1)1.2.2高性能的内存 (1)1.2.3高度集成化的设计 (2)1.2.4内置AGP 3D图形加速卡 (2)1.2.5内置PCI 3D音效 (2)1.2.6可选的内置通讯 (3)1.2.7扩展选项 (3)1.2.8集成的I/O端口 (3)1.2.9键盘开机 (3)1.2.10可编程固件 (3)1.3主板指南 (3)1.3.1元件说明 (4)1.3.2 I/O端口布局 (5)1.3.3 I/O端口说明 (5)1.4跳线设定 (6)第二章设置 (9)2.1关于设置程序 (9)2.1.1 进入设置程序 (9)2.1.2 使用设置程序 (9)2.2S TANDARD CMOS S ETUP选项 (11)2.3BIOS F EATURES S ETUP O PTION选项 (12)2.4C HIPSET F EATURES O PTION选项 (16)2.5P OWER M ANAGEMENT S ETUP O PTION选项 (19)2.6PNP/PCI C ONFIGURATION O PTION选项 (24)2.7L OAD BIOS D EFAULTS O PTION选项 (25)2.8L OAD O PTIMUM S ETTINGS O PTION选项 (26)2.9I NTEGRATED P ERIPHERALS O PTION选项 (26)2.10P ASSWORD S ITTINGS选项 (29)2.11IDE HDD A UTO D ETECTION O PTION选项 (30)2.12S AVE A ND E XIT S ETUP O PTION选项 (30)2.13E XIT W ITHOUT S AVING O PTION选项 (30)第三章音频系统介绍 (30)3.1主要功能 (31)3.2数字音频（SPDIF IN/OUT） (31)3.3立体声混音器 (32)3.4G AME以及M IDI接口 (32)3.5驱动程序及软件安装 (32)3.5.1DOS下软件的安装 (32)3.5.2W IN 95/98下软件的安装 (32)3.5.3W INDOWS NT4.0下软件的安装 (32)3.5.5W IN 2000下软件的安装 (33)3.6 WINDOWS应用程序 (33)3.6.1 Audio Rack (组合音响) (33)3.6.2 Control Center （控制中心） (34)3.6.3 CD Player （CD播放机） (35)3.6.4 MIDI Player（MIDI播放机） (37)3.6.5 MP3/Wave Player（MP3/Wave播放机） (40)3.6.6 Mixer（混音器） (45)第四章显示系统介绍 (48)第四章其它软件 (50)4.1关于软件 (50)4.2本主板的目录 (50)4.3目录安装注意事项 (50)附录一：如何刷新BIOS (53)第一章介绍1.1 关于说明书这本说明书由以下章节组成。
低功耗瞬态管P6SMB15CA型号说明
低功耗瞬态管P6SMB15CA型号说明硕凯电子（Sylvia）一、最大额定值Notes:1.Non-repetitive current pulse,per Fig.3and derated above TA=25°C per Fig.2.2.Mounted on5.0mm x5.0mm(0.03mm thick)Copper Pads to each terminal.3.8.3ms single half sine-wave,or equivalent square wave,Duty cycle=4pulses per minutes maximum.4.VF<3.5V for VBR<200V and VF<6.5V for VBR>201V.二、脉冲浪涌三、UL认证编号四、产品应用说明TVS器件非常适合保护I/O接口，Vcc总线和其他应用于电信、计算机、工业和消费电子应用的易损电路。
五、脉冲降额曲线五、电路图六、I-V曲线特性七、产品特性1、为表面安装应用优化电路板空间2、低泄漏3、单向和双向单元4、玻璃钝化结5、低电感6、优良的钳位能力7、600W的峰值功率能力在10×1000μ波形重复率（占空比）：0.01%8、快速响应时间：从0伏特到最小击穿电压通常小于1.0ps9、典型的，在电压高于12V时，反向漏电流小于5μA10、高温焊接：终端260°C/40秒11、典型的最大温度系数△Vbr=0.1%x Vbr@25°C x△T12、塑料包装有保险商实验室可燃性94V-013、无铅镀雾锡14、无卤化，符合RoHS15、典型失效模式是在指定的电压或电流下出现16、晶须测试是基于JEDEC JESD201A每个表4a及4c进行的17、IEC-61000-4-2ESD15kV(空气)，8kV(接触)18、数据线的ESD保护符合IEC61000-4-2(IEC801-2)19、数据线的EFT保护符合IEC61000-4-4(IEC801-4)八、瞬态管产品图。
P6SMB 600W 突发电压抑制器数据手册说明书
P6SMB600 W Transient voltage suppressorProduct features• Low profile SMB package • Excellent clamping capability•600 W peak pulse power capability at 10/1000 μs waveform• Typical I R less than 1 μA above 12 V•Fast response time: typically less than 1.0 ps from 0 V to V BR minimum•High temperature reflow soldering: +260 °C /40 s at terminal•Plastic package meets UL 94 V-0 flammability rating• Meets moisture sensitivity level (MSL) level 1•Terminal: Solder plated leads, solderable per J-STD-002•For surface mounted applications in order to optimize board space•UL 497B recognized.File No. : E198449 Guide QVGQ2Applications• Consumer electronics • Telecommunications • Computing and servers • Appliances• Industrial automation •Mobile and wearablesEnvironmental compliance and general specificationsP6SMB 6-8 C AFamily name V R voltage(“-” indicates decimal point) Bi-/Uni-Directional(Blank=Uni, C=Bi)Voltage toleranceOrdering part numberPIN configurationPb HALOGENHF FREE2Technical Data 11212Effective November 2020P6SMB600 W Transient voltage suppressor/electronicsParameterSymbolValueUnitStorage operating junction temperature range T STG / T J -55 to +150°C Steady state power dissipation at T L = +75 °C P M(AV) 5.0W Peak pulse power dissipation on 10/1000 μs waveformP PP 600W Maximum instantaneous forward voltage at 100 A for unidirectionalV F 5.0V Peak forward surge current, 8.3 ms single half sine wave 1I FSM 100A Typical thermal resistance junction to leadR JL20°C/W Typical thermal resistance junction to ambientR JA100°C/WAbsolute maximum ratings(+25 °C, RH=45%-75%, unless otherwise noted)1. Measured on 8.3 ms single half sine wave or equivalent square wave for unidirectional device only, duty cycle = 4 per minute maximumPackaging information (mm)Drawing not to scale.Supplied in tape and reel packaging, 3,000 parts per 13” diameter reel (EIA-481 compliant)Mechanical parameters, pad layout- mmMillimetersInches Dimension MinimumMaximumMinimumMaximumA 3.30 3.940.1300.155B 4.30 4.800.1690.189C 1.90 2.200.0750.087D 0.95 1.520.0370.060E 5.20 5.600.2050.220F 0.0510.2030.0020.008G 0.150.310.0060.012H 2.10 2.400.0830.094J 2.200.087K 2.600.102L2.300.091Part markingDimension Millimeters InchesA0 3.76 ± 0.30.148 ± 0.012B0 5.69 ± 0.30.224 ± 0.012C 330.013.0 D0 1.55 ± 0.10.061 ± 0.004E 1.75 ± 0.20.069 ± 0.008E113.3 ± 0.30.524 ± 0.012F 5.5 ± 0.20.217 ± 0.008P0 4.00 ± 0.20.157 ± 0.008P18.00 ± 0.20.315 ± 0.008P2 2.00 ± 0.2 0.079 ± 0.008W 12.0 ± 0.20.472 ± 0.008W115.7 ± 2.00.618 ± 0.079Cathode band (Uni-polar only)Part marking: xxxx = Date codeyyyy- Refer to marking designator listed in Electrical Characteristics table3Technical Data 11212Effective November 2020P6SMB600 W Transient voltage suppressor /electronicsPart number Marking V RI R @ V R V BR @ I T I TV C @ I PP I PP Uni-polarBi-polarUni Bi(V)(μA)min (V)max (V)(mA)max (V)(A)P6SMB6-8A P6SMB6-8CA 6V8A 6V8C 5.8150 6.457.141010.558.1P6SMB7-5A P6SMB7-5CA 7V5A 7V5C 6.41207.137.881011.354P6SMB8-2A P6SMB8-2CA 8V2A 8V2C 7.02507.798.611012.150.4P6SMB9-1A P6SMB9-1CA 9V1A 9V1C 7.78208.659.55113.445.5P6SMB10A P6SMB10CA 10A 10C 8.55109.510.5114.542.1P6SMB11A P6SMB11CA 11A 11C 9.4510.511.6115.639.1P6SMB12A P6SMB12CA 12A 12C 10.2211.412.6116.736.5P6SMB13A P6SMB13CA 13A 13C 11.1112.413.7118.233.5P6SMB15A P6SMB15CA 15A 15C 12.8114.315.8121.228.8P6SMB16A P6SMB16CA 16A 16C 13.6115.216.8122.527.1P6SMB18A P6SMB18CA 18A 18C 15.3117.118.9125.224.2P6SMB20A P6SMB20CA 20A 20C 17.111921127.721.7P6SMB22A P6SMB22CA 22A 22C 18.8120.923.1130.619.7P6SMB24A P6SMB24CA 24A 24C 20.5122.825.2133.218.4P6SMB27A P6SMB27CA 27A 27C 23.1125.728.4137.516.3P6SMB30A P6SMB30CA 30A 30C 25.6128.531.5141.414.7P6SMB33A P6SMB33CA 33A 33C 28.2131.434.7145.713.3P6SMB36A P6SMB36CA 36A 36C 30.8134.237.8149.912.2P6SMB39A P6SMB39CA 39A 39C 33.3137.141153.911.3P6SMB43A P6SMB43CA 43A 43C 36.8140.945.2159.310.3P6SMB47A P6SMB47CA 47A 47C 40.2144.749.4164.89.4P6SMB51A P6SMB51CA 51A 51C 43.6148.553.6170.18.7P6SMB56A P6SMB56CA 56A 56C 47.8153.258.81777.9P6SMB62A P6SMB62CA 62A 62C 53158.965.11857.2P6SMB68A P6SMB68CA 68A 68C 58.1164.671.4192 6.6P6SMB75A P6SMB75CA 75A 75C 64.1171.378.81103 5.9P6SMB82A P6SMB82CA 82A 82C 70.1177.986.11113 5.4P6SMB91A P6SMB91CA 91A 91C 77.8186.595.51125 4.9P6SMB100A P6SMB100CA 100A 100C 85.51951051137 4.5P6SMB110A P6SMB110CA 110A 110C 94110511611524P6SMB120A P6SMB120CA 120A 120C 10211141261165 3.7P6SMB130A P6SMB130CA 130A 130C 11111241371179 3.4P6SMB150A P6SMB150CA 150A 150C 12811431581207 2.9P6SMB160A P6SMB160CA 160A 160C 13611521681219 2.8P6SMB170A P6SMB170CA 170A 170C 14511621791234 2.6P6SMB180A P6SMB180CA 180A 180C 15411711891246 2.5P6SMB200A P6SMB200CA 200A 200C 17111902101274 2.2P6SMB220A P6SMB220CA 220A 220C 18512092311328 1.9P6SMB250A P6SMB250CA 250A 250C 21412372631344 1.8P6SMB300A P6SMB300CA 300A 300C 25612853151414 1.5P6SMB350A P6SMB350CA 350A 350C 30013323681482 1.3P6SMB400A P6SMB400CA 400A 400C 34213804201548 1.1P6SMB440A P6SMB440CA 440A 440C 376141846216021P6SMB480A P6SMB480CA 480A 480C 408145650416580.9P6SMB510A P6SMB510CA 510A 510C 434148553516980.9P6SMB540A P6SMB540CA 540A 540C 460151356717400.8P6SMB600AP6SMB600CA600A600C512157063018280.75Electrical characteristics (+25 °C)4Technical Data 11212Effective November 2020P6SMB600 W Transient voltage suppressor/electronicsI P P M (% I R S M )t (ms)200 25 50 75 100125 150 175P P P d e r a t i n g i n p e r c e n t a g e (%)100406080T J -Initial junction temperature (°C)V- I curve characteristics (Uni-directional)V- I curve characteristics (Bi-directional)Pulse waveformPulse derating curveSurge waveform: 10/1000 μsV R : Stand-off voltage -- Maximum voltage that can be applied V BR : Breakdown voltageV C : Clamping voltage -- Peak voltage measured across the suppressor at a specified I PP I R : Reverse leakage current I T : Test currentV F : Forward voltage drop for Uni-directional TVS diode0.001 0.01 0.11.0 100.11.010010600 W at 10/1000 μs +25 °CP p p (k W )t d -Pulse width (ms)Peak pulse power dissipation vs. pulse widthRatings and V-I characteristic curves (+25 °C unless otherwise noted)EatonElectronics Division 1000 Eaton Boulevard Cleveland, OH 44122United States/electronics© 2020 EatonAll Rights Reserved Printed in USAPublication No. 11212 BU-MC20190November 2020Technical Data 11212Effective November 2020P6SMB600 W Transient voltage suppressor Life Support Policy: Eaton does not authorize the use of any of its products for use in life support devices or systems without the express writtenapproval of an officer of the Company. Life support systems are devices which support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.Eaton reserves the right, without notice, to change design or construction of any products and to discontinue or limit distribution of any products. Eaton also reserves the right to change or update, without notice, any technical information contained in this bulletin.Solder reflow profileT e m p e r a t u r eT LT PEaton is a registered trademark.All other trademarks are property of their respective owners.Follow us on social media to get the latest product and support information.Reference J-STD-020Profile featureStandard SnPb solderLead (Pb) free solderPreheat and soak • Temperature min. (T smin )100 °C 150 °C • Temperature max. (T smax )150 °C 200 °C • Time (T smin to T smax ) (t s )60-120 seconds 60-180 seconds Ramp up rate T L to T p 3 °C/ second max. 3 °C/ second max.Liquidous temperature (T l ) Time (t L ) maintained above T L183 °C60-150 seconds 217 °C60-150 seconds Peak package body temperature (T P )*Table 1Table 2Time (t p )* within 5 °C of the specified classification temperature (T c )20 seconds*40 seconds*Ramp-down rate (T p to T L ) 6 °C/ second max. 6 °C/ second max.Time 25 °C to peak temperature6 minutes max.8 minutes max.* Tolerance for peak profile temperature (T p ) is defined as a supplier minimum and a user maximum.Table 1 - Standard SnPb solder (T c )Package thicknessVolume mm3 <350Volume mm3 ≥350<2.5 mm 235 °C 220 °C ≥2.5 mm220 °C220 °CTable 2 - Lead (Pb) free solder (T c )Package thicknessVolume mm 3 <350Volume mm 3350 - 2000Volume mm 3 >2000<1.6 mm 260 °C 260 °C 260 °C 1.6 – 2.5 mm 260 °C 250 °C 245 °C >2.5 mm250 °C245 °C245 °C。
AS3900接收器内部结构及性能讲解
AS3900 接收器内部结构及性能讲解
AS3900 采用内置星型网络管理协议，是全球唯一使用27 MHz ISM(工业、科学和医疗)频段的收发器。
使用该频段避免了常用2.4 GHz 频段
经常出现的干扰，同时减少人体对能量的吸收(SAR 或比吸收率)。
这对于人
体局域网(body area network)或医疗人体局域网(medical body area network)等接近人体的收发器来说是主要的考虑因素。
AS3900 低功耗接收器采用奥地利微电子的内置星型网络管理协议，为
自我管理全部网络功能提供了一套容易使用、硬连线且免版税的协议。
与其
他完全运行于内部或外部微控制器的协议相比，硬连线星型网络协议简化了
产品设计，极大地降低了系统功耗。
此款低功耗收发器在轮询模式下电流仅
为2.5μA，接收及发送模式下电流通常分别为3.8 mA 和4.9 mA，其中包括管
理星型网络需要的电能。
AS3900 的性能和功能使其完全适用于各种低功耗短距离的数据交换应用。
这些应用包括接近人体的数据传输设备，如医疗、智能体育用品、工业
自动化、人体局域网等任何短距离传感器网络。
AS3900 集成的唤醒接收器在
轮询模式下仅消耗2.5μA的超低电流。
AS3900 包含一个27 MHz 谐振小型PCB 天线。
其27MHz 频段传输相比2.4GHz 频段的液体穿透效果更好，还可
防止采用RSSI(接收信号强度指示)而引起错误范围估计或产生反射。
P6SMB36CAT3G中文资料
Publication Order Number: P6SMB11CAT3/D
元器件交易网
P6SMB11CAT3 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
元器件交易网
P6SMB11CAT3 Series
600 Watt Peak Power Zener Transient Voltage Suppressors
Bidirectional*
The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetict package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications.
双向瞬态电压抑制二极管P6SMB30CA
双向瞬态电压抑制二极管P6SMB30CA
硕凯电子（Sylvia）
一、命名方式
二、物理说明
三、产品特性
1、为表面安装应用优化电路板空间
2、低泄漏
3、单向和双向单元
4、玻璃钝化结
5、低电感
6、优良的钳位能力
7、600W的峰值功率能力在10×1000μ波形重复率（占空比）：0.01%
8、快速响应时间：从0伏特到最小击穿电压通常小于1.0ps
9、典型的，在电压高于12V时，反向漏电流小于5μA
10、高温焊接：终端260°C/40秒
11、典型的最大温度系数△Vbr=0.1%x Vbr@25°C x△T
12、塑料包装有保险商实验室可燃性94V-0
13、无铅镀雾锡
14、无卤化，符合RoHS
15、典型失效模式是在指定的电压或电流下出现
16、晶须测试是基于JEDEC JESD201A每个表4a及4c进行的
17、IEC-61000-4-2ESD15kV(空气)，8kV(接触)
18、数据线的ESD保护符合IEC61000-4-2(IEC801-2)
19、数据线的EFT保护符合IEC61000-4-4(IEC801-4)
四、UL认证编号
五、应用说明
TVS器件非常适合保护I/O接口，Vcc总线和其他应用于电信、计算机、工业和消费电子应用的易损电路。
六、瞬态电压抑制二极管产品图
七、产品电路图
八、最大不重复浪涌电流
九、编带说明。
P6SMB6V8CA中文资料
100 A V F P6SMB6V8 ........... P6SMB300A P6SMB6V8C ...... P6SMB250CAMaximum Ratings and Electrical Characteristics at 25 ºCP PPM Peak Pulse Power Dissipation with 10/1000 µs exponential pulse600 W I FSMPeak Forward Surge Current 8.3 ms.(Jedec Method)Max. forward voltage drop at I F = 100 A3.5 V Operating Junction and StorageNote 1: Only for UnidirectionalT J -T STG- 65 to + 175 ºC(Note 1)(Note 1)Nov - 06600 W Unidirectional and Bidirectional Surface Mounted Transient Voltage Suppressor DiodesP6SMB6V8P6SMB6V8A P6SMB7V5P6SMB7V5A P6SMB8V2P6SMB8V2A P6SMB9V1P6SMB9V1A P6SMB10P6SMB10A P6SMB11P6SMB11A P6SMB12P6SMB12A P6SMB13P6SMB13A P6SMB15P6SMB15A P6SMB16P6SMB16A P6SMB18P6SMB18A P6SMB20P6SMB20A P6SMB22P6SMB22A P6SMB24P6SMB24A P6SMB27P6SMB27A P6SMB30P6SMB30A P6SMB33P6SMB33A P6SMB36P6SMB36A P6SMB39P6SMB39ATypeMaximum Reverse Leakage Current atUnidirectional(µA)(V)Nom.Max.(mA)(1)I RMI Rat (V)Breakdown Voltage Max. Clamping VoltageV BR V CL at I pp V RMmax. 1ms. Expo.(V)(A)(1) Tested with pulses.Pulse test: tp £ 50 ms; d < 2%Marking Code Min.KD 5657515348504445404137383536323327282627232421221920171815161414.412.613.211.61210.611.210.810.511.711.312.512.113.813.415.014.516.215.617.316.719.018.222.021.223.522.526.525.529.127.731.930.634.733.239.137.543.541.447.745.752.049.956.453.91010101011011111111111111111111111111111111050050020020050101051000100050555555555555555555555555555KE KF KG KH KK KL KM KN KP KQ KR KS KT KU KV KW KX KY KZ LD LE LF LG LH LK LL LM LN QP LQ LR LS LT LU LV LW LX5.505.806.056.406.637.027.377.788.108.558.929.409.7210.210.511.112.112.812.913.614.515.316.217.117.818.819.420.521.823.124.325.626.828.229.130.831.633.36.126.456.757.137.387.798.198.659.009.509.9010.510.811.411.712.413.514.314.415.216.217.118.019.019.820.921.622.824.325.727.028.529.731.432.434.235.137.16.87.486.87.147.58.257.57.888.29.028.28.619.110.09.19.5511.010101111121213131515161618182020222224242727303033333636393910.512.111.613.212.614.313.716.515.817.616.819.818.922.021.024.223.126.425.229.728.433.031.536.334.739.637.842.941.047.345.251.749.456.153.661.658.868.265.174.871.482.578.890.286.110095.511010512111613212614313716515817616818717919818922021024223127526334.838.140.241.343.645.447.850.253.055.158.160.764.166.470.173.777.881.085.589.294.097.210210511112112813013613814514615416217117518520221438.740.942.344.745.948.555.858.961.264.667.571.373.877.981.986.590.0095.099.0108114117124135143144152153162162171180190198209225237434747515156566262686875758282919110010011011012012013013015015016016017017018018020020022022025025036.84350.453.261.959.367.864.873.570.180.577.089.085.098.092.01081031181131311251441371581521731651871792152072302192442342582462872743443283603449.6TypeMaximum Reverse Leakage Current atUnidirectional(µA)(V)Nom.Max.(mA)(1)I RMI Rat (V)Breakdown Voltage Max. Clamping VoltageV BR V CL at I pp V RMmax. 1ms. Expo.(V)(A)(1) Tested with pulses.Pulse test: tp £ 50 ms; d < 2%Marking Code Min.L Y 155555555555555555555555555555555555555P6SMB43P6SMB43A P6SMB47P6SMB47A P6SMB51P6SMB51A P6SMB56P6SMB56A P6SMB62P6SMB62A P6SMB68P6SMB68A P6SMB75P6SMB75A P6SMB82P6SMB82A P6SMB91P6SMB91A P6SMB100P6SMB100A P6SMB110P6SMB110A P6SMB120P6SMB120A P6SMB130P6SMB130A P6SMB150P6SMB150A P6SMB160P6SMB160A P6SMB170P6SMB170A P6SMB180P6SMB180A P6SMB200P6SMB200A P6SMB220P6SMB220A P6SMB250P6SMB250A 55LZ MD ME MF MG MH MK ML MM MN MP MQ MR MS MT MU MV MW MX MY MZ ND NE NF NG NH NK NL NM NN NP NQ NR NS NT NU NV NW NX 105P6SMB300P6SMB300ANJ NZ552432562702853003001111111111111111111111111111111111111111133031543441410.18.99.38.28.67.47.86.87.16.16.55.55.85.15.34.54.84.24.43.84.03.53.63.23.32.82.92.62.72.52.62.32.42.12.21.751.831.671.751.391.45P6SMB6V8C P6SMB6V8CA P6SMB7V5C P6SMB7V5CA P6SMB8V2C P6SMB8V2CA P6SMB9V1C P6SMB9V1CA P6SMB10C P6SMB10CA P6SMB11C P6SMB11CA P6SMB12C P6SMB12CA P6SMB13C P6SMB13CA P6SMB15C P6SMB15CA P6SMB16C P6SMB16CA P6SMB18C P6SMB18CA P6SMB20C P6SMB20CA P6SMB22C P6SMB22CA P6SMB24C P6SMB24CA P6SMB27C P6SMB27CA P6SMB30C P6SMB30CA P6SMB33C P6SMB33CA P6SMB36C P6SMB36CA P6SMB39C P6SMB39CATypeMaximum Reverse Leakage Current atBidirectional(µA)(V)Nom.Max.(mA)(1)I RMI Rat (V)Breakdown Voltage Max. Clamping VoltageV BR V CL at I pp V RMmax. 1ms. Expo.(V)(A)(1) Tested with pulses.Pulse test: tp £ 50 ms; d < 2%Marking Code Min.PD 5657515348504445404137383536323327282627232421221920171815161414.412.613.211.61210.611.210.810.511.711.312.512.113.813.415.014.516.215.617.316.719.018.222.021.223.522.526.525.529.127.731.930.634.733.239.137.543.541.447.745.752.049.956.453.91010101011011111111111111111111111111111111050050020020050101051000100050555555555555555555555555555PE PF PG PH PK PL PM PN PP PQ PR PS PT PU PV PW PX PY PZ QD QE QF QG QH QK QL QM QN QP QQ QR QS QT QU QV QW QX5.505.806.056.406.637.027.377.788.108.558.929.409.7210.210.511.112.112.812.913.614.515.316.217.117.818.819.420.521.823.124.325.626.828.229.130.831.633.36.126.456.757.137.387.798.198.659.009.509.9010.510.811.411.712.413.514.314.415.216.217.118.019.019.820.921.622.824.325.727.028.529.731.432.434.235.137.16.87.486.87.147.58.257.57.888.29.028.28.619.110.09.19.5511.010101111121213131515161618182020222224242727303033333636393910.512.111.613.212.614.313.716.515.817.616.819.818.922.021.024.223.126.425.229.728.433.031.536.334.739.637.842.941.047.345.251.749.456.153.661.658.868.265.174.871.482.578.890.286.110095.511010512111613212614313716515817616818717919818922021024223127526334.838.140.241.343.645.447.850.253.055.158.160.764.166.470.173.777.881.085.589.294.097.210210511112112813013613814514615416217117518520221438.740.942.344.745.948.555.858.961.264.667.571.373.877.981.986.590.0095.099.0108114117124135143144152153162162171180190198209225237434747515156566262686875758282919110010011011012012013013015015016016017017018018020020022022025025036.84350.453.261.959.367.864.873.570.180.577.089.085.098.092.01081031181131311251441371581521731651871792152072302192442342582462872743443283603449.6TypeMaximum Reverse Leakage Current atBidirectional(µA)(V)Nom.Max.(mA)(1)I RMI Rat (V)Breakdown Voltage Max. Clamping VoltageV BR V CL at I pp V RMmax. 1ms. Expo.(V)(A)(1) Tested with pulses.Pulse test: tp £ 50 ms; d < 2%Marking Code Min.QY 155555555555555555555555555555555555555P6SMB43C P6SMB43CA P6SMB47C P6SMB47CA P6SMB51C P6SMB51CA P6SMB56CP6SMB56CA P6SMB62C P6SMB62CA P6SMB68C P6SMB68CA P6SMB75C P6SMB75CA P6SMB82C P6SMB82CA P6SMB91C P6SMB91CA P6SMB100C P6SMB100CA P6SMB110C P6SMB110CA P6SMB120C P6SMB120CA P6SMB130C P6SMB130CA P6SMB150C P6SMB150CA P6SMB160C P6SMB160CA P6SMB170C P6SMB170CA P6SMB180C P6SMB180CA P6SMB200C P6SMB200CA P6SMB220C P6SMB220CA P6SMB250C P6SMB250CA55QZ TD TE TF TG TH TK TL TM TN TP TQ TR TS TT TU TV TW TX TY TZ VD VE VF VG VH VK VL VM VN VP VQ VR VS VT VU VV VW VX10511111111111111111111111111111111111111110.18.99.38.28.67.47.86.87.16.16.55.55.85.15.34.54.84.24.43.84.03.53.63.23.32.82.92.62.72.52.62.32.42.12.21.751.831.671.75P6SMBRating And Characteristic Curves1007550250T emperature in ºCPulse wave form 10/1000DERATING CURVE100 ns1µs 10µs 1 msPulse time-t100 µs PEAK PULSE POWER RATING CURVEP p p , - P e a k P u l s e P o w e r (W )255075100125150175102103104105P p p , - P e a k P u l s e P o w e r i n % o f 25 °C。
低功耗瞬态二极管P6SMB39CA型号
低功耗瞬态二极管P6SMB39CA型号硕凯电子（Sylvia）一、最大额定值Notes:1.Non-repetitive current pulse,per Fig.3and derated above TA=25°C per Fig.2.2.Mounted on5.0mm x5.0mm(0.03mm thick)Copper Pads to each terminal.3.8.3ms single half sine-wave,or equivalent square wave,Duty cycle=4pulses per minutes maximum.4.VF<3.5V for VBR<200V and VF<6.5V for VBR>201V.二、瞬态二极管产品特性1、为表面安装应用优化电路板空间2、低泄漏3、单向和双向单元4、玻璃钝化结5、低电感6、优良的钳位能力7、600W的峰值功率能力在10×1000μ波形重复率（占空比）：0.01%8、快速响应时间：从0伏特到最小击穿电压通常小于1.0ps9、典型的，在电压高于12V时，反向漏电流小于5μA10、高温焊接：终端260°C/40秒11、典型的最大温度系数△Vbr=0.1%x Vbr@25°C x△T12、塑料包装有保险商实验室可燃性94V-013、无铅镀雾锡14、无卤化，符合RoHS15、典型失效模式是在指定的电压或电流下出现16、晶须测试是基于JEDEC JESD201A每个表4a及4c进行的17、IEC-61000-4-2ESD15kV(空气)，8kV(接触)18、数据线的ESD保护符合IEC61000-4-2(IEC801-2)19、数据线的EFT保护符合IEC61000-4-4(IEC801-4)三、脉冲降额曲线四、UL认证编号五、脉冲浪涌五、产品应用说明TVS器件非常适合保护I/O接口，Vcc总线和其他应用于电信、计算机、工业和消费电子应用的易损电路。
双向TVS二极管P6SMB12CA型号
双向TVS二极管P6SMB12CA型号硕凯电子（Sylvia）一、双向TVS二极管产品图二、最大额定值Notes:1.Non-repetitive current pulse,per Fig.3and derated above TA=25°C per Fig.2.2.Mounted on5.0mm x5.0mm(0.03mm thick)Copper Pads to each terminal.3.8.3ms single half sine-wave,or equivalent square wave,Duty cycle=4pulses per minutes maximum.4.VF<3.5V for VBR<200V and VF<6.5V for VBR>201V.三、UL认证编号四、产品应用说明TVS器件非常适合保护I/O接口，Vcc总线和其他应用于电信、计算机、工业和消费电子应用的易损电路。
五、脉冲降额曲线五、电路图六、I-V曲线特性七、产品特性1、为表面安装应用优化电路板空间2、低泄漏3、单向和双向单元4、玻璃钝化结5、低电感6、优良的钳位能力7、600W的峰值功率能力在10×1000μ波形重复率（占空比）：0.01%8、快速响应时间：从0伏特到最小击穿电压通常小于1.0ps9、典型的，在电压高于12V时，反向漏电流小于5μA10、高温焊接：终端260°C/40秒11、典型的最大温度系数△Vbr=0.1%x Vbr@25°C x△T12、塑料包装有保险商实验室可燃性94V-013、无铅镀雾锡14、无卤化，符合RoHS15、典型失效模式是在指定的电压或电流下出现16、晶须测试是基于JEDEC JESD201A每个表4a及4c进行的17、IEC-61000-4-2ESD15kV(空气)，8kV(接触)18、数据线的ESD保护符合IEC61000-4-2(IEC801-2)19、数据线的EFT保护符合IEC61000-4-4(IEC801-4)八、脉冲浪涌。
P6SMB39CAT3G资料
P6SMB11CAT3 Series600 Watt Peak Power Zener Transient Voltage Suppressors Bidirectional*The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic t package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications.Features•Working Peak Reverse V oltage Range − 9.4 to 77.8 V •Standard Zener Breakdown V oltage Range − 11 to 91 V •Peak Power − 600 W @ 1 ms•ESD Rating of Class 3 (>16 KV) per Human Body Model •Maximum Clamp V oltage @ Peak Pulse Current•Low Leakage < 5 m A Above 10 V•UL 497B for Isolated Loop Circuit Protection •Response Time is Typically < 1 ns•Pb−Free Packages are AvailableMechanical Characteristics:CASE:V oid-Free, Transfer-Molded, Thermosetting Plastic FINISH:All External Surfaces are Corrosion Resistant and Leads are Readily SolderableMAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 SecondsLEADS:Modified L−Bend Providing More Contact Area to Bond Pads POLARITY:Polarity Band Will Not be IndicatedMOUNTING POSITION:AnyMAXIMUM RATINGSRating Symbol Value Unit Peak Power Dissipation (Note 1) @ T L = 25°C,Pulse Width = 1 msP PK600WDC Power Dissipation @ T L = 75°C Measured Zero Lead Length (Note 2) Derate Above 75°CThermal Resistance, Junction−to−LeadP DR q JL3.04025WmW/°C°C/WDC Power Dissipation (Note 3) @ T A = 25°C Derate Above 25°CThermal Resistance, Junction−to−AmbientP DR q JA0.554.4226WmW/°C°C/WOperating and Storage Temperature Range T J, Tstg−65 to+150°CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.10 X 1000 m s, non−repetitive2.1″ square copper pad, FR−4 board3.FR−4 board, using ON Semiconductor minimum recommended footprint, asshown in 403A case outline dimensions spec.*Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices.Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.Device Package Shipping†ORDERING INFORMATIONP6SMBxxCAT3SMB2500/T ape & ReelP6SMBxxCAT3G SMB(Pb−Free)2500/T ape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.The “T3” suffix refers to a 13 inch reel.ELECTRICAL CHARACTERISTICS(T A = 25°C unless otherwise noted)Symbol ParameterI PP Maximum Reverse Peak Pulse CurrentV C Clamping Voltage @ I PPV RWM Working Peak Reverse VoltageI R Maximum Reverse Leakage Current @ V RWMV BR Breakdown Voltage @ I TI T Test CurrentQ V BR Maximum Temperature Coefficient of V BRELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)Device*DeviceMarkingV RWM(Note 4)I R@V RWMBreakdown Voltage V C @ I PP(Note 6)Q V BRC typ(Note 7)V BR Volts (Note 5)@ I T V C I PPVolts m A Min Nom Max mA Volts Amps%/°C pFP6SMB11CAT3, G P6SMB12CAT3, G P6SMB13CAT3, G 11C12C13C9.410.211.155510.511.412.411.051213.0511.612.613.711115.616.718.23836330.0750.0780.081865800740P6SMB15CAT3, G P6SMB16CAT3, G P6SMB18CAT3, G P6SMB20CAT3, G 15C16C18C20C12.813.615.317.1555514.315.217.11915.0516182015.816.818.921111121.222.525.227.7282724220.0840.0860.0880.09645610545490P6SMB22CAT3, G P6SMB24CAT3, G P6SMB27CAT3, G P6SMB30CAT3, G 22C24C27C30C18.820.523.125.6555520.922.825.728.5222427.053023.125.228.431.5111130.633.237.541.420181614.40.090.0940.0960.097450415370335P6SMB33CAT3, G P6SMB36CAT3, G P6SMB39CAT3, G P6SMB43CAT3, G 33C36C39C43C28.230.833.336.8555531.434.237.140.933.053639.0543.0534.737.84145.2111145.749.953.959.313.21211.210.10.0980.0990.10.101305280260240P6SMB47CAT3, G P6SMB51CAT3, G P6SMB56CAT3, G P6SMB62CAT3, G 47C51C56C62C40.243.647.853555544.748.553.258.947.0551.05566249.453.658.865.1111164.870.177859.38.67.87.10.1010.1020.1030.104220205185170P6SMB68CAT3, G P6SMB75CAT3, G P6SMB82CAT3, G P6SMB91CAT3, G 68C75C82C91C58.164.170.177.8555564.671.377.986.56875.05829171.478.886.195.51111921031131256.55.85.34.80.1040.1050.1050.1061551401301204. A transient suppressor is normally selected according to the working peak reverse voltage (V RWM), which should be equal to or greater thanthe DC or continuous peak operating voltage level.5.V BR measured at pulse test current I T at an ambient temperature of 25°C.6.Surge current waveform per Figure 2 and derate per Figure 3 of the General Data − 600 Watt at the beginning of this group.7.Bias Voltage = 0 V, F = 1 MHz, T J = 25°C*The “G’’ suffix indicates Pb−Free package available. Please refer back to Ordering Information on front page.P , P E A K P O W E R (k W )P 1101000.1t, TIME (ms)Figure 2. Pulse WaveformTYPICAL PROTECTION CIRCUITFigure 3. Pulse Derating CurveP E A K P U L S E D E R A T I N G I N % O F P E A K P O W E R O R C U R R E N T @ T A = 25C°T A , AMBIENT TEMPERATURE (°C)Figure 4. Typical Junction Capacitance vs. BiasVoltageBIAS VOLTAGE (VOLTS)110100C , C A P A C I T A N C E (p F )APPLICATION NOTESRESPONSE TIMEIn most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 4.The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 5. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMB series have a very good response time, typically < 1 ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Z in is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation.DUTY CYCLE DERATINGThe data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 6. A verage power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose.At first glance the derating curves of Figure 6 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. However, when the derating factor for a given pulse of Figure 6 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend.VFigure 5. Figure 6.Figure 7. Typical Derating Factor for Duty CycleD E R A T I N GF A C T O R10.70.50.30.050.10.010.020.030.07D, DUTY CYCLE (%)UL RECOGNITIONThe entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2)under the UL standard for safety 497B and File #116110.Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several testsincluding Strike V oltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric V oltage-Withstand test, Discharge test and several more.Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category.PACKAGE DIMENSIONSSMBDO−214AACASE 403A−03ISSUE F*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.SURMETIC is a trademark of Semiconductor Components Industries, LLC.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。
TVS二极管-P6SMB系列规格书
P6SMB91A P6SMB91CA 91A 91C 86.45 95.55 1
P6SMB100A P6SMB100CA 100A 100C 95.00 105.00 1
P6SMB110A P6SMB110CA 110A 110C 104.50 115.50
1
P6SMB120A P6SMB120CA 120A 120C 114.00 126.00
Parameter Peak power dissipation with a 10/1000μs waveform(1)
Symbol PPP
Value 600
Peak pulse current with a 10/1000μs waveform(1)
IPP See Next Table
Power dissipation on infinite heatsink at TL = 75 °C
except Bipolar ● Mounting position: Any
Surface Mount Transient Voltage Suppressors
SMB/ DO-214AA
0.191 [4.85] 0.171 [4.35]
0.087 [2.20] 0.078 [1.96]
0.148 [3.75] 0.130 [3.30]
P6SMB43A P6SMB43CA 43A 43C 40.85 45.15 1
P6SMB47A P6SMB47CA 47A 47C 44.65 49.35 1
P6SMB51A P6SMB51CA 51A 51C 48.45 53.55 1
P6SMB56A P6SMB56CA 56A 56C 53.20 58.80 1
SM39R16A3内嵌16KB具...
产品目录 (3)描述 (3)订货信息 (3)特征 (3)各封装引脚配置 (4)系统方框图 (6)管脚描述 (7)特殊功能寄存器(SFR) (8)功能描述 (12)1.总特征 (12)1.1嵌入式程序存储器 (12)1.2IO口 (12)1.3指令时钟周期选择 (12)1.4时钟输出选择 (13)1.5复位 (13)1.6时钟源 (15)2.指令设置 (16)3.存储器结构 (20)3.1程序存储器 (20)3.2数据存储器 (21)3.3数据内存-低128字节(00H TO 7F H) (21)3.4数据存储器-高128字节(80H TO FF H) (21)3.5存储器-扩展的256字节($00到$FF) (21)4.CPU结构 (22)4.1累加器 (22)4.2B寄存器 (22)4.3程序状态字 (23)4.4堆栈指针 (23)4.5数据指针 (23)4.6数据指针1 (24)4.7时钟控制寄存器 (24)4.8接口控制寄存器 (25)5.GPIO管脚型态 (26)6.定时器0 和定时器1 (28)6.1定时器/计数器模式控制寄存器(TMOD) (28)6.2定时/计数控制寄存器(TCON) (29)6.3定时器输入频率控制寄存器 (29)6.4模式0(13位定时/计数) (30)6.5模式1(16位定时/计数) (31)6.6模式2(8位自动重载定时/计数) (31)6.7模式3(两个独立8位定时/计数(仅定时器0)) (32)7.定时器2 以及捕捉/比较单元 (32)7.1定时器2功能 (35)7.2比较功能 (36)7.3捕获功能 (38)8.串行接口0 (39)8.1串行接口由以下4种模式可以设置 (40)8.2串行接口的多重机通讯 (42)8.3输入频率控制寄存器 (42)8.4波特率发生器 (42)9.看门狗定时器 (44)10.中断 (48)10.1优先权配置 (51)11.电源管理单元 (53)11.1待机模式(空闲模式) (53)11.2停止模式 (53)12.脉宽调制器(PWM) (54)13.IIC 功能 (57)14.SPI功能 (62)15.KBI –键盘接口 (67)16.LVI –低压侦测中断 (70)17.10位模拟数字转换器(ADC) (71)18.在系统编程(INTERNAL ISP) (75)18.1ISP服务程序 (75)18.2锁定位(N) (75)18.3对ISP服务程序编程 (76)18.4启动ISP服务程序 (76)18.5ISP寄存器–TAKEY,IFCON,ISPFAH,ISPFAL,ISPFD AND ISPFC (76)19.比较器(COMPARATOR) (80)工作环境 (83)DC电气特性 (83)ADC电气特性 (85)COMPARATOR 电气特性 (85)LVI& LVR电气特性 (86)产品目录SM39R16A3U20,SM39R16A3U16,SM39R16A3U14,描述原来的8052有12时钟结构,一个机器周期需要12个时钟，大多数指令是一个或两个机器周期.因此，除了乘和除指令, 8052的每个指令使用12或24个时钟,此外,8052中的每个周期用了两个记忆提取.在许多情况下，第二个是假的提取,和额外的时钟被浪费了该SM39R16A3是一个快速的单芯片8位微控制器内核.这是一个全功能的8位嵌入式控制器，执行所有ASM51指令,具有与MCS - 51相同的指令设置订货信息SM39R16A3ihhkL yymmvi: 工艺标志{ U = 1.8V ~ 5.5V}hh: 封装脚位k: 封装形式后缀{as table below }L: 无铅标志{无文字即含铅，”P” 即无铅}yy: 年mm: 月v: 版本标志{ A, B,…}Postfix PackageN PDIP (300 mil)S SOP (300 mil)O SOP (150 mil)G SSOP (150 mil) 特征●工作电压: 1.8V ~ 5.5V●高速1T 架构，最高可达25MHz●1~8T 模式可使用软件编程●指令设置兼容 MCS-51●内置22.1184MHz RC振荡器，及可程序化的分频器●16KB字节的片上闪存程序存储器●512B 字节的标准的8052 RAM●双16-bit 数据指针 (DPTR0&DPTR1)●一个全双工通信的串行接口.附加波特率产生器●三个16-bit 的定时器/计数器（计时器0，1，2）●12 ~18 GPIOs(14L~ 20L封装脚位)，GPIOs 可选择四种型态(准双向口、推挽、开漏、只输入)，默认准双向口(上拉)●具有四级优先权的外部中断0&外部中断1●可编程的看门狗定时器（WDT）●一个IIC 接口（主/从机模式）●一个SPI 接口（主/从机模式）●4路 10bit 脉宽调制(PWM)●4路16bit 比较(PWM)/捕获/重载功能●7路10bit 模拟数字转换（ADC）加上1路通道0链接内部Vref●片上内建比较器●片上闪存存储器支持ISP/IAP/ICP及EEPROM 功能●ISP服务程序存储空间设置为N*128 byte (N=0 to 8) ●片上在线仿真功能(ICE)及片上在线调试功能(OCD) ●键盘接口(KBI) 共4个的中断源●ALE 输出选择●低电压中断/低电压复位(LVI/LVR )●管脚ESD性能超过4KV●增强用户代码保护●电源管理单元空闲及掉电模式各封装引脚配置20 Pin PDIP/SOP/SSOPCmp1Out/SPICLK/KBI0/P0.0 PWM1/MOSI/CC2/P1.7PWM0/MISO/CC1/P1.6RST/P1.5VSSOSC_IN/XTAL1/P3.1CLKOUT/XTAL2/P3.0SS/INT1/P1.4 OCISDA/IICSDA/INT0/P1.3 OCISCL/IICSCL/T0/P1.2P0.1/KBI1/ADC1/Cmp1NInP0.2/KBI2/ADC2/Cmp1PInP0.3/KBI3/T2/ADC3/Cmp0NIn P0.4/ADC4/Cmp0PInP0.5/ADC5/CC0/PWM2 VDDP0.6/ADC6/Cmp0OutP0.7/T1/ADC7/CC3/PWM3P1.0/TXDP1.1/RXD/T2EX16 Pin SOPPWM0/MISO/CC1/P1.6RST/P1.5VSS OSC_IN/XTAL1/P3.1CLKOUT/XTAL2/P3.0SS/INT1/P1.4 OCISDA/IICSDA/INT0/P1.3 OCISCL/IICSCL/T0/P1.2P0.3/KBI3/T2/ADC3/Cmp0NIn P0.4/ADC4/Cmp0PInP0.5/ADC5/CC0/PWM2 VDDP0.6/ADC6/Cmp0OutP0.7/T1/ADC7/CC3/PWM3P1.0/TXDP1.1/RXD/T2EX14 Pin SOPSM39R16A3PWM0/MISO/CC1/P1.6RST/P1.5VSSOSC_IN/XTAL1/P3.1CLKOUT/XTAL2/P3.0OCISDA/IICSDA/INT0/P1.3P1.2/IICSCL/T0/OCISCLVDD P1.0/TXD P1.1/RXD/T2EX PWM1/MOSI/CC2/P1.7P0.0/KBI0/SPICLK/Cmp1Out P0.1/KBI1/ADC1/Cmp1NIn P0.2/KBI2/ADC2/Cmp1PIn附注：出厂默认值注意事项(1) 管脚RST/P1.5于出厂时设置为一般双向I/O(P1.5)脚，若使用者需切换为复位脚可于刻录时将此管脚定义为RESET 脚(2) 2. 为避免偶然的情况下误入ISP 刻录状态(参考第18.4单元)，在上电时请确保没有连续的脉冲信号在管脚RXD P1.1及管脚P1.6必须置高，可于刻录时(3) 3. OSI_SDA/P1.3及OCI_SCL/P1.2于复位期间为ICP 刻录功能管脚，复位完成后切换成双向I/O.系统方框图Port 0Port 1Port 3T0T1CC0~CC3T2T2EXI C _S C L P W M 0P W M 1R X DX Dm p 0N I n /C m 1N I n m p 0O u t /C m p 1O u tXTAL1XTAL2D C 1 D C 2 D C 3 I C _S D AP I _M I S O P I _M O S I P I _C L K P I _S SD C 4D C 5 D C 6 D C 7O C I _S C (s h a r e w i t h I I C O C I _S D (s h a r e w i t h I I C RESET m p 0P I n /C m p 1P I n P W M 2P W M 3管脚描述20L 16L 14L 代号I/O 描述1 - 14 P0.0/KBI0/SPICLK/ADC0/ CMP1OutI/O P0口的位0 & 键盘接口中断0 & SPI 接口时钟&模数转换通道0 &比较器1输出2 - 1 P1.7/CC2/MOSI/PWM1 I/O P1口的位7 &计时器2及捕获/比较单元通道2& SPI 接口串行数据线主输出或从输入口&宽脉调制通道13 1 2 P1.6/CC1/MISO/PWM0 I/O P1口的位6 &计时器2及捕获/比较单元通道1& SPI 接口串行数据线主输入或从输出口&宽脉调制通道04 2 3 P1.5/RST I/O P1口的位5 &复位 5 3 4 VSSI 供电电源地6 4 5 P3.1/XTAL1/OSC_IN I/O P3口的位1 &晶振输入&外部振荡器输入7 5 6 P3.0/XTAL2/CLKOUT I/O P3口的位0 &晶振输出&时钟输出8 6 - P1.4/INT1/SS I/O P1口的位4 &外部中断1& SPI 接口从机跳线9 7 7 P1.3/INT0/IICSDA/OCISDA I/O P1口的位3 &外部中断0 & IIC 串行数据线 & ICE 和 ICP 功能的指令及数据输入10 8 8 P1.2/T0/IICSCL/ OCISCL I/O P1口的位2 &计时器0外部输入& IIC 串行时钟线 & ICE 和 ICP 功能的时钟输入11 9 9 P1.1/RXD/T2EX I/O P1口的位1 & 串行接口通道接收/发送数据 & 计时器2捕捉触发及捕获触发器12 10 10 P1.0/TXDI/O P1口的位0 &串行接口通道数据传输或接收模式0时钟13 11 - P0.7/T1/ADC7/ CC3/PWM3I/O P0口的位7 &计时器1外部输入&模数转换通道7 &计时器2及捕获/比较单元通道3 &宽脉调制通314 12 - P0.6/ADC6/CMP0Out I/O P0口的位6 & 模数转换通道6 &比较器0输出 15 13 11 VDDI 数位电源电压16 14 - P0.5/ADC5/CC0/PWM2 I/O P0口的位5 & 模数转换通道5 &计时器2及捕获/比较单元通道0 &宽脉调制通道217 15 - P0.4/ADC4/ CMP0PIn I/O P0口的位4 & 模数转换通道4 & 比较器0非反向输入18 16 - P0.3/KBI3/T2/ ADC3/CMP0NIn I/O P0口的位3 & 键盘接口中断3 & 计时器2外部输入时钟 &模数转换通道3 & 比较器0反向输入19 - 12 P0.2/KBI2/ADC2/ CMP1PIn I/O P0口的位2 & 键盘接口中断2 & 模数转换通道2 & 比较器1非反向输入20-13P0.1/KBI1/ADC1/ CMP1NInI/OP0口的位0 & 键盘接口中断1 & 模数转换通道1 & 比较器1反向输入特殊功能寄存器(SFR)特殊功能寄存器分布图如下所示：注：SM39R16A3特殊功能寄存器的重置值在下表描述寄存器地址重置值描述SYSTEMSP 81h 07h Stack PointerACC E0h 00h AccumulatorPSW D0h 00h Program Status WordB F0h 00h B RegisterDPL 82h 00h Data Pointer 0 low byteDPH 83h 00h Data Pointer 0 high byteDPL1 84h 00h Data Pointer 1 low byteDPH1 85h 00h Data Pointer 1 high byteAUX 91h 00h Auxiliary registerPCON 87h 00h Power ControlCKCON 8Eh 10h Clock control registerINTERRUPT & PRIORITYIRCON C0h 00h Interrupt Request Control RegisterIRCON2 97h 00h Interrupt Request Control Register 2寄存器地址重置值描述IEN0 A8h 00h Interrupt Enable Register 0IEN1 B8h 00h Interrupt Enable Register 1IEN2 9Ah 00h Interrupt Enable Register 2IP0 A9h 00h Interrupt Priority Register 0IP1 B9h 00h Interrupt Priority Register 1KBIKBLS 93h 00h Keyboard level selector RegisterKBE 94h 00h Keyboard input enable RegisterKBF 95h 00h Keyboard interrupt flag RegisterKBD 96h 00h Keyboard interface De-bounce control register UARTPCON 87h 00h Power ControlAUX 91h 00h Auxiliary registerSCON 98h 00h Serial Port, Control RegisterSBUF 99h 00h Serial Port, Data BufferSRELL AAh 00h Serial Port, Reload Register, low byteSRELH BAh 00h Serial Port, Reload Register, high bytePFCON D9h 00h Peripheral Frequency control registerADCADCC1 ABh 00h ADC Control 1 RegisterADCC2 ACh 00h ADC Control 2 RegisterADCDH ADh 00h ADC data high byteADCDL AEh 00h ADC data low byteADCCS AFh 00h ADC clock selectWDTRSTS A1h 00h Reset status registerWDTC B6h 04h Watchdog timer control registerWDTK B7h 00h Watchdog timer refresh key.TAKEY F7h 00h Time Access Key registerPWMPWMC B5h 00h PWM control registerPWMD0H BCh 00h PWM channel 0 data high bytePWMD0L BDh 00h PWM channel 0 data low bytePWMD1H BEh 00h PWM channel 1 data high bytePWMD1L BFh 00h PWM channel 1 data low bytePWMD2H B1h 00h PWM channel 2 data high bytePWMD2L B2h 00h PWM channel 2 data low bytePWMD3H B3h 00h PWM channel 3 data high bytePWMD3L B4h 00h PWM channel 3 data low bytePWMMDH CEh 00h PWM Max Data Register, high byte. PWMMDL CFh FFh PWM Max Data Register, low byte.寄存器地址重置值描述TIMER0/TIMER1TCON 88h 00h Timer/Counter ControlTMOD 89h 00h Timer Mode ControlTL0 8Ah 00h Timer 0, low byteTL1 8Bh 00h Timer 1, low byteTH0 8Ch 00h Timer 0, high byteTH1 8Dh 00h Timer 1, high bytePFCON D9h 00h Peripheral Frequency control registerPCA(TIMER2)CCEN C1h 00h Compare/Capture Enable RegisterCCL1 C2h 00h Compare/Capture Register 1, low byteCCH1 C3h 00h Compare/Capture Register 1, high byteCCL2 C4h 00h Compare/Capture Register 2, low byteCCH2 C5h 00h Compare/Capture Register 2, high byteCCL3 C6h 00h Compare/Capture Register 3, low byteCCH3 C7h 00h Compare/Capture Register 3, high byteT2CON C8h 00h Timer 2 ControlCCCON C9h 00h Compare/Capture ControlCRCL CAh 00h Compare/Reload/Capture Register, low byte CRCH CBh 00h Compare/Reload/Capture Register, high byte TL2 CCh 00h Timer 2, low byteTH2 CDh 00h Timer 2, high byteCCEN2 D1h 00h Compare/Capture Enable 2 registerGPIOP0 80h FFh Port 0P1 90h FFh Port 1P3 B0h FFh Port 3P0M0 D2h 00h Port 0 output mode 0P0M1 D3h 00h Port 0 output mode 1P1M0 D4h 00h Port 1 output mode 0P1M1 D5h 00h Port 1 output mode 1P3M0 DAh 00h Port 3 output mode 0P3M1 DBh 00h Port 3 output mode 1ISP/IAP/EEPROMIFCON 8Fh 00h Interface control registerISPFAH E1h FFh ISP Flash Address-High registerISPFAL E2h FFh ISP Flash Address-Low registerISPFD E3h FFh ISP Flash Data registerISPFC E4h 00h ISP Flash control registerTAKEY F7h 00h Time Access Key registerLVI/LVR/SOFTRESET寄存器地址重置值描述RSTS A1h 00h Reset status registerLVC E6h 20h Low voltage control registerSWRES E7h 00h Software Reset registerTAKEY F7h 00h Time Access Key registerSPIAUX 91h 00h Auxiliary registerSPIC1 F1h 08h SPI control register 1SPIC2 F2h 00h SPI control register 2SPITXD F3h 00h SPI transmit data bufferSPIRXD F4h 00h SPI receive data bufferSPIS F5h 40h SPI status registerIICAUX 91h 00h Auxiliary registerIICS F8h 00h IIC status registerIICCTL F9h 04h IIC control registerIICA1 FAh A0h IIC channel 1 Address 1 registerIICA2 FBh 60h IIC channel 1 Address 2 registerIICRWD FCh 00h IIC channel 1 Read / Write Data buffer IICEBT FDh 00h IIC Enable Bus Transaction register OPAOPPIN F6h 00H Comparator Pin Select registerCMP0CON FEh 00h Comparator 0 Control registerCMP1CON FFh 00h Comparator 1 Control register功能描述1. 总特征SM39R16A3是一个8位的微处理器,它的所有功能以及特殊功能寄存器（SFR）的详细定义将在以下章节给出.1.1 嵌入式程序存储器可通过编程器或在线编程(ISP)将程序加载到16KB的嵌入式闪存体中,其高品质的闪存体具有100K次的重复可擦写编程并记忆数据，如EEPROM。
P6SMB系列机械数据特性：变压器稳压器说明书
Mechanical DataFeature:Transient Voltage Suppressors* 600 Watt Peak Power Dissipation * Glass Passivated Die Construction* Excellent Clamping Capability Fast Response Time* Plastic Material Has UL Flammability Classification Rating 94V-O* Case: Transfer Molded Epoxy* Polarity: Indicator by Cathode Band* Terminals: Solderable per MIL-STD-202 Method 208* Weight: 0.1grams(approx)(Bi-directional Devices Has no Polarity Indicator)NOTE: 1. Non-Repetitive Current Pulse, per FIG3 and Derated 2. Mounted on 5.0mm Copper Pads to each Terminal3. 8.3ms Single Half Sine-Wave, or equivalent Square above TA=25 C per FIG2Wave, Duty Cycle=4 pulses per minutes Maximum.Maximum Ratings2SMB(DO-214AA)1/4UNI- POLAR BI-POLAR(1)UNI BI P6SMB6.8A P6SMB7.5A P6SMB8.2A P6SMB9.1A P6SMB10A P6SMB11A P6SMB12AP6SMB13A P6SMB15A P6SMB16A P6SMB18A P6SMB20A P6SMB22A P6SMB24A P6SMB27A P6SMB30A P6SMB33A P6SMB36A P6SMB39A P6SMB43A P6SMB47A P6SMB51A P6SMB56A P6SMB62A P6SMB68A P6SMB75A P6SMB82A P6SMB91A P6SMB100A P6SMB110A P6SMB120A P6SMB130A P6SMB150A P6SMB160A P6SMB170A P6SMB180A P6SMB200A P6SMB220A P6SMB250A P6SMB300A P6SMB350A P6SMB400A P6SMB440A P6SMB480A P6SMB510A P6SMB530A P6SMB540A P6SMB550A P6SMB6.8CA P6SMB7.5CA P6SMB8.2CA P6SMB9.1CA P6SMB10CA P6SMB11CA P6SMB12CA P6SMB13CA P6SMB15CA P6SMB16CA P6SMB18CA P6SMB20CA P6SMB22CA P6SMB24CA P6SMB27CA P6SMB30CA P6SMB33CA P6SMB36CA P6SMB39CA P6SMB43CA P6SMB47CA P6SMB51CA P6SMB56CA P6SMB62CA P6SMB68CA P6SMB75CA P6SMB82CA P6SMB91CA P6SMB100CA P6SMB110CA P6SMB120CA P6SMB130CA P6SMB150CA P6SMB160CA P6SMB170CA P6SMB180CA P6SMB200CA P6SMB220CA P6SMB250CA P6SMB300CA P6SMB350CA P6SMB400CA P6SMB440CA P6SMB480CA P6SMB510CA P6SMB530CA P6SMB540CA P6SMB550CA 6V8A 5.80 6.451010.558.110007V5A 6.407.131011.354.08008V2A 7.027.791012.150.42009V1A 7.788.651013.445.55010A 8.559.50114.542.11011A 9.4010.50115.639.1512A 10.2011.40116.736.5513A 11.1012.40118.233.5515A 12.8014.30121.228.8516A 13.6015.20122.527.1518A 15.3017.10125.524.2520A 17.1019.00127.722.0522A 18.8020.90130.619.9524A 20.5022.80133.218.4527A 23.1025.70137.516.3530A 25.6028.50141.414.7533A 28.2031.40145.713.3536A 30.8034.20149.912.2539A 33.3037.10153.911.3543A 36.8040.90159.310.3547A 40.2044.70164.89.4551A 43.6048.50170.18.7556A 47.8053.20177.07.9562A 53.0058.90185.07.2568A 58.1064.60192.0 6.6575A 64.1071.301103.0 5.9582A 70.1077.901113.0 5.4591A 77.8086.501125.0 4.95100A 85.5095.001137.0 4.55110A 94.00105.001152.0 4.05120A 102.00114.001165.0 3.75130A 111.00124.001179.0 3.45150A 128.00143.001207.0 2.95160A 136.00152.001219.0 2.85170A 145.00162.001234.0 2.65180A 154.00171.001246.0 2.55200A 171.00190.001274.0 2.25220A 185.00209.001328.0 1.95250A 214.00237.001344.0 1.85300A 256.00285.001414.0 1.55350A 300.00332.001482.0 1.35400A 342.00380.001548.0 1.15440A 376.00418.001602.0 1.05480A 408.00456.001658.00.95510A 434.00485.001698.00.95530A 540A 550A 6V8C 7V5C 8V2C 9V1C 10C11C12C13C 15C16C18C20C 22C24C 27C 30C 33C36C 39C 43C 47C51C56C62C 68C75C82C91C100C 110C 120C 130C 150C 160C 170C 180C 200C 220C 250C 300C 350C 400C 440C 480C 510C 530C 540C 550C 450.00459.00467.00503.50513.00522.507.147.888.619.5510.5011.6012.5013.7015.8016.8018.9021.0023.1025.2028.4031.5034.7037.8041.0045.2049.4053.6058.8065.1071.4078.8086.1095.50105.00116.00126.00137.00158.00168.00179.00189.00210.00231.00263.00315.00368.00420.00462.00504.00535.00556.50567.00577.50111725.0740.0760.00.80.80.8555For bidirectional type having Vrwm of 10 volts and less, the IR limit is double.for parts without A , the V BR is + + 10%.BREAK DO WN VOLTAGE V BR (V)(1)V BR (V)(2)MAX.@I TTEST CURRE NT I T (mA)MAXIMUM CLAMPING VOLTAGE @Ipp Vc(V)PEAK PULSE CURRENT Ipp (A)P6SMBPART NUMBER DEVICE MARKING CODEREVERSE STAND-OFF VOLTAGE V RWM (V)MIN.@I T REVERSE LEAKAGE @ V RWMI R (µA)(3)Electrical characteristicsNOTE: 1. Suffix C denotes Bi-direction device, Suffix A denotes the V is 5% BR2. V messured with I Current pulse=300us.BRT 3.Transient Voltage Suppressors2/4P P P M — P e a k P u l s e P o w e r (k W )FIG. 6 - Maximum Non-Repetitive PeakForward Surge CurrentNumber of C ycles at 60H Z11100t p — P ulse Duration (sec)T r a n s i e n t T h e r m a l I m p e d a n c e C /W )FIG. 5 - Typical T ransient ThermalImpedance0.0010.010.11101001000I P P M — P e a k P u l s e C u r r e n t , % I R S MRatings and Characteristic CurvesTransient Voltage Suppressors3/4Transient Voltage Suppressors SMB Outline Dimension4/4。
AS3930DEMO说明
AS3930DEMO说明一．整体说明此DEMO为模拟前端AS3930演示之用，由Microchip的XLP（超低功耗）系类单片机PIC16F722做主控。
可更好降低系统功耗。
二．性能概要1.AS3930•Single channel ASK wakeup receiver•Carrier frequency range 110 - 150 kHz•Programmable wakeup pattern (16bits)•Doubling of wakeup pattern supported•Wakeup without pattern detection supported•Wakeup sensitivity 100µVRMS (typ.)唤醒灵敏度100μVRMS（典型值）•Adjustable sensitivity level•Highly resistant to false wakeups•False wakeup counter•Periodical forced wakeup supported (1s – 2h)•Low power listening modes•Current consumption in listening mode 1.37 µA (typ.)电流消耗聆听模式1.37μA（典型值）•Data rate adjustable from 0.5 - 4 kbps (Manchester)•Manchester decoding with clock recovery•Digital RSSI•Dynamic range 64dB动态范围六十四分贝• 5 bit RSSI step (2dB per step)•RTC based on 32kHz XTAL, RC-OSC, or external clock•Operating temperature range -40 to +85ºC•Operating supply voltage 2.4 - 3.6V (TA = 25ºC)•Bidirectional serial digital interface (SDI)•Package option 16 pin TSSOP, QFN 4x4 16 LD2．PIC16LF722•Only 35 Instructions to Learn:- All single-cycle instructions except branches•Operating Speed:- DC – 20 MHz oscillator/clock input- DC – 200 ns instruction cycle•Up to 8K x 14 Words of Flash Program Memory•Up to 368 Bytes of Data Memory (RAM)•Interrupt Capability•8-Level Deep Hardware Stack•Direct, Indirect and Relative Addressing modes•Processor Read Access to Program Memory•Pinout Compatible to other 28/40-pin PIC16CXXXand PIC16FXXX Microcontrollers•Sleep Mode: 20 nA•Watchdog Timer: 500 nA•Timer1 Oscillator: 600 nA @ 32 kHz三．硬件原理图1．低频接收部分主控单片机模拟前端指示灯四．工作原理当低频发射端被触发后，125K低频信号从天线发出。
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P6SMB6.8AT3 Series600 Watt Peak Power Zener Transient Voltage SuppressorsUnidirectional*The SMB series is designed to protect voltage sensitivecomponents from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic™ package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications.Specification Features:•Working Peak Reverse V oltage Range − 5.8 to 171 V •Standard Zener Breakdown V oltage Range − 6.8 to 200 V •Peak Power − 600 W @ 1 ms•ESD Rating of Class 3 (>16 KV) per Human Body Model •Maximum Clamp V oltage @ Peak Pulse Current•Low Leakage < 5 m A Above 10 V•UL 497B for Isolated Loop Circuit Protection •Response Time is Typically < 1 ns•Pb−Free Packages are AvailableMechanical Characteristics:CASE:V oid-free, transfer-molded, thermosetting plasticFINISH:All external surfaces are corrosion resistant and leads are readily solderableMAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 SecondsLEADS:Modified L−Bend providing more contact area to bond pads POLARITY:Cathode indicated by polarity bandMOUNTING POSITION:AnyMAXIMUM RATINGSPlease See the Table on the Following Page*Please see P6SMB11CAT3 to P6SMB91CAT3 for Bidirectional devices.Device Package Shipping†ORDERING INFORMATIONP6SMBxxxAT3SMB2500/Tape & ReelSMBCASE 403APLASTICP6SMBxxxAT3G SMB(Pb−Free)2500/Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.A= Assembly LocationY= YearWW= Work Weekxx= Device Code (Refer to page 3)G= Pb−Free PackageMARKING DIAGRAMAYWWxx GG(Note: Microdot may be in either location)MAXIMUM RATINGSRating Symbol Value Unit Peak Power Dissipation (Note 1) @ T L = 25°C, Pulse Width = 1 ms P PK600WDC Power Dissipation @ T L = 75°C Measured Zero Lead Length (Note 2) Derate Above 75°CThermal Resistance from Junction−to−LeadP DR q JL3.04025WmW/°C°C/WDC Power Dissipation (Note 3) @ T A = 25°C Derate Above 25°CThermal Resistance from Junction−to−AmbientP DR q JA0.554.4226WmW/°C°C/WForward Surge Current (Note 4) @ T A = 25°C I FSM100A Operating and Storage Temperature Range T J, T stg−65 to +150°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.10 X 1000 m s, non−repetitive2.1″ square copper pad, FR−4 board3.FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.4.1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.ELECTRICAL CHARACTERISTICS(T A = 25°C unless otherwise noted, V F = 3.5 V Max. @I F (Note 4) = 30 A) (Note 5)Symbol ParameterI PP Maximum Reverse Peak Pulse CurrentV C Clamping Voltage @ I PPV RWM Working Peak Reverse VoltageI R Maximum Reverse Leakage Current @ V RWMV BR Breakdown Voltage @ I TI T Test CurrentQ V BR Maximum Temperature Coefficient of V BRI F Forward CurrentV F Forward Voltage @ I F5.1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitiveduty cycleELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)DeviceDeviceMarkingV RWM(Note 6)I R@V RWMBreakdown Voltage V C @ I PP(Note 8)Q V BRC typ(Note 9)V BR V (Note 7)@ I T V C I PPV m A Min Nom Max mA V A%/°C pFP6SMB6.8AT3, G P6SMB7.5AT3, G P6SMB8.2AT3, G P6SMB9.1AT3, G 6V8A7V5A8V2A9V1A5.86.47.027.781000500200506.457.137.798.656.87.518.29.17.147.888.619.55101010110.511.312.113.4575350450.0570.0610.0650.0682380218020151835P6SMB10AT3, G P6SMB11AT3, G P6SMB12AT3, G P6SMB13AT3, G 10A11A12A13A8.559.410.211.1105559.510.511.412.41011.051213.0510.511.612.613.7111114.515.616.718.2413836330.0730.0750.0780.0811690155014351335P6SMB15AT3, G P6SMB16AT3, G P6SMB18AT3, G P6SMB20AT3, G 15A16A18A20A12.813.615.317.1555514.315.217.11915.0516182015.816.818.921111121.222.525.227.7282724220.0840.0860.0880.09117511101000910P6SMB22AT3,G P6SMB24AT3, G P6SMB27AT3, G P6SMB30AT3, G 22A24A27A30A18.820.523.125.6555520.922.825.728.5222427.053023.125.228.431.5111130.633.237.541.420181614.40.0920.0940.0960.097835775700635P6SMB33AT3, G P6SMB36AT3, G P6SMB39AT3, G P6SMB43AT3, G 33A36A39A43A28.230.833.336.8555531.434.237.140.933.053639.0543.0534.737.84145.2111145.749.953.959.313.21211.210.10.0980.0990.10.101585540500460P6SMB47AT3, G P6SMB51AT3, G P6SMB56AT3, G P6SMB62AT3, G 47A51A56A62A40.243.647.853555544.748.553.258.947.0551.05566249.453.658.865.1111164.870.177859.38.67.87.10.1010.1020.1030.104425395365335P6SMB68AT3, G P6SMB75AT3, G P6SMB82AT3, G P6SMB91AT3, G 68A75A82A91A58.164.170.177.8555564.671.377.986.56875.05829171.478.886.195.51111921031131256.55.85.34.80.1040.1050.1050.106305280260235P6SMB100AT3, G P6SMB110AT3, G P6SMB120AT3, G P6SMB130AT3, G 100A110A120A130A85.594102111555595105114124100110.5120130.510511612613711111371521651794.44.03.63.30.1060.1070.1070.107215200185170P6SMB150AT3, G P6SMB160AT3, G P6SMB170AT3, G P6SMB180AT3, G 150A160A170A180A1281361451545555143152162171150.516017018015816817918911112072192342462.92.72.62.40.1080.1080.1080.108150140135130P6SMB200AT3, G200A17151902002101274 2.20.1081156. A transient suppressor is normally selected according to the working peak reverse voltage (V RWM), which should be equal to or greater thanthe DC or continuous peak operating voltage level.7.V BR measured at pulse test current I T at an ambient temperature of 25°C.8.Surge current waveform per Figure 2 and derate per Figure 3.9.Bias Voltage = 0 V, F = 1 MHz, T J = 25°C*The “G” suffix indicates Pb−Free package available.P , P E A K P O W E R (k W )P 1101000.1t, TIME (ms)Figure 2. Pulse WaveformTYPICAL PROTECTION CIRCUITFigure 3. Pulse Derating CurveP E A K P U L S E D E R A T I N G I N % O F P E A K P O W E R O R C U R R E N T @ T A = 25C°T A , AMBIENT TEMPERATURE (°C)Figure 4. Typical Junction Capacitance vs.Bias VoltageBIAS VOLTAGE (VOLTS)1101001000C , C A P A C I T A N C E (p F )APPLICATION NOTESRESPONSE TIMEIn most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 5.The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 6. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMB series have a very good response time, typically < 1 ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout,minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot.Some input impedance represented by Z in is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation.DUTY CYCLE DERATINGThe data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 7. Average power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose.At first glance the derating curves of Figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. However, when the derating factor for a given pulse of Figure 7 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend.VFigure 5. Figure 6.Figure 7. Typical Derating Factor for Duty CycleD E R A T I N GF A C T O R10.70.50.30.050.10.20.010.020.030.07D, DUTY CYCLE (%)UL RECOGNITIONThe entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2)under the UL standard for safety 497B and File #E210057.Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several testsincluding Strike V oltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric V oltage-Withstand test, Discharge test and several more.Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category.PACKAGE DIMENSIONSSMBCASE 403A−03ISSUE F*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSCALE 8:1NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.DIM A MIN NOM MAX MIN MILLIMETERS1.902.13 2.450.075INCHES A10.050.100.200.002b 1.96 2.03 2.200.077c 0.150.230.310.0063.30 3.56 3.950.130E4.06 4.32 4.600.160L 0.761.02 1.600.0300.0840.0960.0040.0080.0800.0870.0090.0120.1400.1560.1700.1810.0400.063NOM MAX 5.21 5.44 5.600.2050.2140.220H E 0.51 REF0.020 REFD L1ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATIONSURMETIC is a trademark of Semiconductor Components Industries, LLC.。