Effects of gamma irradiation on soil aggregate stability
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PDA的技术报告目录PDA——Parenteral Drug Association,注射用药物协会(/)PDA技术报告目录/PDA PublicationsTechnical Methods Bulletin No.1 - Extractables from Elastomeric Closures: Analytical Procedures for Functional Group Characterization/IdentificationTechnical Methods Bulletin No.2 - Elastomeric Closures: Evaluation of Significant Performance and Identity CharacteristicsTechnical Methods Bulletin No.3 - Glass Containers for Small Volume Parenteral Products: Factors for Selection and Test Methods for IdentificationTechnical Information Bulletin No.2 - Generic Test Procedures for Elastomeric Closures Technical Information Bulletin No.4 - Aspects of Container/Closure IntegrityTechnical Report No.1 - Validation of Steam Sterilisation CyclesTechnical Report No.3 - Validation of Dry Heat Processes used for Sterilisation and DepyrogenationTechnical Report No.4 - Design Concepts for the Validation of a Water for Injection System Technical Report No.5 - Sterile Pharmaceutical Packaging: Compatibility and Stability Technical Report No.7 - DepyrogenationTechnical Report No.8 - Parametric Release of Parenteral Solutions Sterilized by Moist Heat Sterilization, 1987 (Please note: Technical Report No. 8 has been superseded by Technical Report No. 30 and is no longer available.)Technical Report No.9 - Review of Commercially Available Particulate Measurement Systems Technical Report No.10 - Parenteral Formulations of Proteins & Peptides: Stability and Stabilizers Technical Report No.11 - Sterilization of Parenterals by Gamma RadiationTechnical Report No.12 - Siliconization of Parenteral Drug Packaging ComponentsTechnical Report No.13 - Fundamentals of a Microbiological Environmental Monitoring Program Technical Report No.14 - Industry Perspective on the Validation of Column-Based Separation Processes for the Purification of ProteinsTechnical Report No.15 - Industry Perspective on Validation of T angential Flow Filtration in Bio-pharmaceutical ApplicationTechnical Report No.16 - Effect of Gamma Irradiation on Elastomeric ClosuresTechnical Report No.17 - Current Practices in the Validation of Aseptic Processing ? 1992 Technical Report No.18 - PDA Report on the Validation of Computer Related Systems Technical Report No.19 - Rapid/Automated ID Methods SurveyTechnical Report No.20 - Report on Survey of Current Industry Gowning PracticesTechnical Report No.21 - Bioburden Recovery ValidationTechnical Report No.22 - Process Simulation Testing for Aseptically Filled ProductsTechnical Report No.23 - Industry Survey on Current Sterile Filtration PracticesTechnical Report No.24 - Current Practices in the Validation of Aseptic Processing 1996 Technical Report No.25 - Blend Uniformity Analysis: Validation and In-Process Testing Technical Report No.26 - Sterilizing Filtration of LiquidsTechnical Report No.27 - Pharmaceutical Package IntegrityTechnical Report No.28 - Process Simulation Testing for Sterile Bulk Pharmaceutical Chemicals Technical Report No.29 - Points to consider for Cleaning ValidationTechnical Report No.30 - Parametric Release of Pharmaceuticals Terminally Sterilized by Moist HeatTechnical Report No.31 - Validation & Qualification of Computerized Laboratory Data Acquisition SystemsTechnical Report No.32 - Auditing of Suppliers Providing Computer Products and Services for Regulated Pharmaceutical OperationsTechnical Report No.33 - Evaluation, Validation & Implementation of New Microbiological Testing MethodsTechnical Report No.34 - Design and Validation of Isolator Systems for the Manufacturing and Testing of Health Care ProductsTechnical Report No.35 - A Proposed Training Model for the Microbiological Function in the Pharmaceutical IndustryTechnical Report No.36 - Current Practices in the Validation of Aseptic Processing - 2001 Technical Report No.39 - Cold Chain Guidance for Medicinal Products: Maintaining the Quality of Temperature-Sensitive Medicinal Products Through the Transportation EnvironmentTechnical Report No.40 - Sterilizing Filtration of GasesTechnical Report No.41 - Virus FiltrationTechnical Report No.42 - Process Validation of Protein ManufacturingTechnical Report No.43 - Identification and Classification of Nonconformities in Molded and Tubular Glass Containers for Pharmaceutical ManufacturingTechnical Report No.44 - Quality Risk Management for Aseptic ProcessesTechnical Report No.45 - Filtration of Liquids Using Cellulose-Based Depth Filters, 2008。
刘勇 - 哈尔滨工业大学材料学院
材料科学与工程学院刘勇工学博士副教授\硕士生导师+86-451-86413920转8109liuy@主要研究方向固体润滑材料及其空间摩擦学行为、润滑油脂及其空间环境润滑行为、空间原子氧模拟技术、表面改性材料及其空间环境效应社会兼职主要学术成果1.Y.Liu,D.Z.Yang,W.L.Wu,S.Q.Yang.Dry Sliding Wear Behavior of Ti-6Al-4V Alloy in Air.Journal of Harbin Institute of Technology(New Series).2002,19(1):67∼712.刘勇,杨德庄,何世禹,武万良.Ti-6Al-4V合金在真空中的干滑动磨损行为.金属学报.2003,9(7):711∼7143.刘勇,杨德庄,何世禹,武万良.Ti-6Al-4V合金表面的热氧化/真空扩散处理.中国有色金属学报.2003,13(1):177∼1804.Liu Yong,Yang De-Zhuang,He Shi-Yu,Wu parisons of dry sliding wear of the Ti-6Al-4V alloy under condition of air and vacuum.Transactions of Nonferrous Metals Society of China.2003,13(5):1137∼11405.Y.L iu,D.Z.Yang,S.Y.He,W.L.Wu.Microstructure developed in surface layer of Ti-6Al-4V alloy after sliding wear in vacuum.Materials Characterization.2003.50:275∼2796.Yong Liu,Zhuyu Ye,Dezhuang Yang,Shiyu He.Effect of temperature on friction and wear of titanium alloy in vacuum.7th International Conference on“Protection of Materials and Structures from Space Environment”,Toronto-Canada,May10-13,2004,72∼747.刘勇,杨德庄,何世禹,武万良.TC4合金的磨损率及磨损表面层的显微组织变化.稀有金属材料与工程.2005,34(1):128∼1318.刘勇,叶铸玉,杨德庄,何世禹.TC4合金在真空低温下的摩擦磨损行为.哈尔滨工业大学学报.2006.38:335∼3399.刘勇,罗崇泰,叶铸玉,杨剑群,杨德庄.MoS2/石墨溅射涂层在真空中不同载荷下的摩擦磨损行为研究.润滑与密封.2007.32(11): 131∼13210.Yong Liu,Chongtai Luo,Zhuyu Ye,Jianqun Yang,and Dezhuang Yang.Study on Tribological Properties of MoS2+Graphite Sputtering Composite Coating under Various Environment Pressures.9th International Conference on“Protection of Materials and Structures from Space Environment”,Toronto-Canada,May22-24,2007,11.Yong Liu,Zhongtai Luo,Zhuyu Ye,Xingdong Yuan,Dezhuang Yang.Study on Friction and Wear Properties in Vacuum forγ-Ray Irradiated PTFE Coatings.9th International Conference on“Protection of Materials and Structures from Space Environment”,Toronto-Canada,May22-24,2007,12.Yong Liu,Zhuyu Ye,Dezhuang Yang,Shiyu He.Thermal Oxidized Coating on Surface of Titanium Alloy for Improvement of Tribological Properties in Vacuum.第五届摩擦学国际会议CIST2008.13.Yong Liu,Zhuyu Ye,Xingdong Yuan,Dezhuang Yang.Study on Friction and Wear Properties in Vacuum forγ-Ray Irradiated PTFE Coatings.第五届摩擦学国际会议CIST2008.14.孙荣禄,刘勇,杨德庄,钛合金表面激光熔覆NiCrBSi-TiC复合涂层的组织和摩擦磨损性能.中国激光.2003.30(7):659∼66215.孙荣禄,刘勇,杨德庄.TC4合金及其表面TiC p/Ni基合金及光荣浮沉的摩擦磨损性能.摩擦学学报.2003.23(6):457∼46216.W.L.Wu,Y.Liu,D.Z.Yang,W.R.Huang.Microstructure of TiC dendrites reinforced titanium matrix composite layer by laser cladding. Journal of Materials Science Letters.2003.22(16):1169∼117117.杨剑群,刘勇,杨德庄,袁兴栋,叶铸玉.MoS2/Graphite涂层真空环境下摩擦学行为研究.哈尔滨工业大学学报.2006.38:358∼360.18.袁兴栋,刘勇,杨德庄,杨剑群,叶铸玉.聚四氟乙烯涂层真空中的摩擦磨损性能研究.哈尔滨工业大学学报.2006.38:363∼366.19.Yu Gao,Song He,Dezhuang Yang,Yong Liu,Zhi-jun Li.Effect of vacuum thermo-cycling on physical properties of unidirectionalM40J/POSITES PART B-ENGINEERING.2005,36:351∼35820.Gao Yu,Sheng-ling,Yang Dezhuang,Liu Yong,Li Zhi-jun.A study on damage effect of vacuum thermo-cycling on M40J-Epoxy composites. Journal of Reinforced plastics and Composites.2005,24(16):1705∼171121.WANG Gang,MA Xinxin,TANG Guangze,LIU Y ong,YANG Dezhuang,and HE Shiyu.Effect of sliding velocity in vacuum on tribological behavior of nitrided2Cr13steel.Rare metals(s)20071422.Jianqun Yang,Yong Liu,Ye Zhuyu,Yang dezhuang,He Shiyu.Wear Behavior of Plasma-nitrided2Cr13Martensitic Stainless Steel under Air and Vacuum.第五届摩擦学国际会议CIST2008.23.Jianqun Yang,Yong Liu,Ye Zhuyu,Yang dezhuang,He Shiyu.Effect of Gamma Irradiation on Friction and Wear Behavior of MoS2/graphite coatings in Vacuum.第五届摩擦学国际会议CIST2008.24.Xinxin Ma,Gang Wang,Guangze Tang,Yong Liu,Shiyu He and Dezhuang Yang.Tribological Behaviors at High Load of MoS2Films in Vacuum.第五届摩擦学国际会议CIST2008.25.高禹,董尚利,杨德庄,刘勇,李志君.在120keV质子辐照下环氧树脂的质损效应.高分子材料科学与工程.2008.(9)24:72∼7526.Jianqun Yang,Yong Liu,Zhuyu Ye,Dezhuang Yang,Shiyu He,Microstructure and tribological characteristics of nitrided layer on martensitic stainless steel in air and vacuum,Surf.Coat.&Tech.2009,204:705∼712。
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A Novel Model for Implementation of GammaRadiation Effects in GaAs HBTs Jincan Zhang,Yuming Zhang,Senior Member,IEEE,Hongliang Lu,Member,IEEE,Yimen Zhang,Senior Member,IEEE,and Min LiuAbstract—For predicting the effects of gamma radiation on gal-lium–arsenide(GaAs)heterojunction bipolar transistors(HBTs), a novel model is presented in this paper,considering the radiation effects.Based on the analysis of radiation-induced degradation in forward base current and cutoff frequency,three semiempirical models to describe the variation of three sensitive model parame-ters are used for simulating the radiation effects within the frame-work of a simplified vertical bipolar inter-company model.Its va-lidity was demonstrated by analysis of the experimental results of GaAs HBTs before and after gamma radiation.Index Terms—Cutoff frequency,forward base current,gamma radiation effects,heterojunction bipolar transistor(HBT),semi-conductor device modeling,vertical bipolar inter-company (VBIC).I.I NTRODUCTIONG ALLIUM–ARSENIDE(GaAs)heterojunction bipolartransistors(HBTs),due to their superior performance, are widely used in space radiation environments,and the recent boost of wireless and other high-end communications continue to draw more and more attention to its reliable long-term per-formance under radiation.Earlier studies on radiation effects on GaAs HBT have shown that GaAs HBTs are very attractive candidates for applications in space-based communication sys-tems[1],[2].In this case,many integrated circuits(ICs)have been designed with a GaAs HBT process[3]–[5].However, to improve the radiation hardness of HBT ICs,designers need electrical models taking account for the degradation induced by radiation.However,most of the radiation studies on GaAs HBTs re-ported thus far have mainly focused on the radiation induced changes from the experimental results with the measured elec-trical characteristics of the devices(e.g.,excess base current, cutoff frequency,etc.)[1],[2],[6],[7].To our knowledge,there is not much published information on modeling the electrical characteristics of HBTs subjected to high-energy radiations[8]. The work of modeling the effects of gamma radiation on the dc characteristics of GaAs HBTs has been studied in our pre-vious work[9].However,the complexity of the radiation-in-Manuscript received May03,2012;revised September16,2012;accepted September20,2012.This work was supported by the National Basic Research Program of China under Grant2010CB327505,the Advance Research Project of China under Grant51308030306,and the Advance Research Foundation of China under Grant9140A08030511DZ111.The authors are with the Microelectronics Institute,Xidian University,Xi’an, Shaanxi710071,China(e-mail:zjc850126@).Digital Object Identifier10.1109/TMTT.2012.2221137duced degradation processes makes it difficult to develop a de-tailed physical model of the device after radiation.An alter-native semiempirical approach is to develop an improved ver-tical bipolar inter-company(VBIC)model to describe electrical characteristics of the device before and after irradiation.One can use the extracted model parameters to describe the degra-dation of sensitive model parameters as a function of radiation dose,and then assemble the device model.We believe that such an approach is very useful to predict the degradation effects of devices.There were reports for simulating radiation-induced degradation of dc characteristics in bipolar transistors of silicon based on the semiempirical approach[10],[11].However,very little progress has been made in modeling the degradation of ac characteristics as a function of radiation dose in bipolar transis-tors based on the semiempirical approach,which is now studied in this work.In this paper,a novel model for implementation of gamma ra-diation effects in GaAs HBTs is developed.This paper is orga-nized as follows.The novel model based on a simplified VBIC model is presented in Section II.To validate the validity of the model,the experimental results of GaAs HBTs under gamma radiation are shown in Section III.The modeled results are com-pared with the measured results in Section IV and conclusions are presented in Section V.II.M ODELThe VBIC model was defined by a group of representa-tives from IC and computer-aided design(CAD)industries to overcome the shortcomings of the Spice Gummel Poon(SGP) model.The equivalent network of VBIC is given in[12].There are several improvements comparing with the SGP model, such as temperature-dependence modeling,quasi-saturation modeling,and decoupling of base and collector currents. However,special characteristics of HBTs make it possible to consider a simplified VBIC model,as shown in Fig.1.In this simplified VBIC model,the following assumptions are consid-ered.1)There is no parasitic pnp transistor in npn HBTs[13];there-fore,the parameters to describe the parasitic transistor can be eliminated.2)The extrinsic base–emitter current and chargecan be neglected compared to the intrinsic base–emitter current and charge,respectively.3)Since de-embedding the parasitic parameters has beendone,base–collector small-signal capacitance and base–emitter small-signal capacitance can be ig-nored.0018-9480/$31.00©2012IEEEFig.1.Simplified VBIC model.4)In HBTs,both early voltages and knee currents for the for-ward and reverse operations can be considered to be infi-nite[14],therefore the normalized base charge tends to be1.The validity of the model to describe HBTs characteristics has been verified in our earlier work[15].Unfortunately,the simplified VBIC model also has not taken account of the par-ticular effects of radiation on the electrical behavior of devices. However,HBTs are significantly degraded when exposed to ra-diation.Forward base current and cutoff frequency are mainly affected.A.Forward Base CurrentIn the measurement of forward-mode Gummel plot,the base current is measured when isfixed at zero while the base–emitter junction is in forward bias.The presence of the relatively large valence band discontinuity at the base–emitter heterointerface leads to effective suppression of the hole current injected from the base region into the emitter.Thus,the base current is mostly determined by the recombination of:1)in the bulk and along the periphery of the base–emitter space-charge region(BE-SCR)and2)in the bulk and at the surface of the neutral base region(NBR).In the simplified VBIC model,the total forward base current for low-level injection where voltage drop across parasitic re-sistances can be neglected is followed by(1) where is the thermal voltage.As can be seen from (1),the base current includes a component,formed by the NBR recombination modeled with saturation current and ideality factor,and a component,caused by the BE-SCR recombination modeled with saturation currentand ideality factor.Radiation-induced degradation in the forward base current of HBTs is attributed to excess carrier recombination including ra-diation-induced traps in the BE-SCR[9],whereas excess base current defined as the difference between the post-radi-ation and pre-radiation base current can be experimentally ex-tracted by the variations of and with radiation dose. In this case,(1)will be improved as(2),in which radiation-in-duced excess saturation current and excess ideal factor are included.(2)B.Cutoff FrequencyPhysically,can be expressed as(3)(4)(5) where is the base–emitter junction capacitor charge time,is the base–collector junction capacitor charge time,is the base transit time,and is the base–collector space-charge region delay time.It has been shown that capacitance and resistance are slightly or even not degraded under radiation for HBTs in our previous works[16],Therefore,the degradation of is mainly caused by the increase of the transit time,which is just the sum of the variations of and in the compact model[17].In the simplified VBIC model,the transit time is modeled as(6) where is the forward transit time,is the variation of with basewidth modulation,is the coefficient of bias dependence,is the coefficient of dependence on, is the coefficient of dependence on,and is the forward collector current.Inserting a parameter related to the variation of due to radiation effect,the equation of the transit time can be im-proved as(7) where radiation-induced excess forward transit time is used to predict the increase of,in turn to describe the degra-dation of.III.E XPERIMENTSIn order to determine the regulations of,,and with radiation dose,and verify the validity of the presented model,the following radiation experiment has been performed.ZHANG et al.:NOVEL MODEL FOR IMPLEMENTATION OF GAMMA RADIATION EFFECTS IN GaAs HBTs3Fig.2.Radiation-induced degradation of base current for different total dose levels.The devices applied in the experiment are GaAs HBTs with a single fabrication batch from the WIN Semiconductors Corpo-ration,Tao Yuan Shien,Taiwan(type Q1H201B1).The width and length of each emitter mesa for Q1H201B1are1and20 m,respectively.Radiation of devices,without bias,was im-plemented in a“Gamma-Cell”with a Co source providing a dose rate of about50rd(Si)/s rd Si rd GaAs, and radiation time of5.5,16.5,38.5,and55h,equivalent to a gamma total dose of1,3,7,and10Mrd(Si),respectively.In order to get enough accurate test data,there were four test sam-ples under every radiation total dose mentioned above.Before the experiment,the samples were carefully selected to ensure the differences of performances among the16tested HBTs to be less than3%and the spread of the measured data for the four devices at each radiation to be within0.1%.All of samples were measured at room temperature K before and after radiation.On-chip forward dc Gummel characteristic measure-ments were made with an HP4142Semiconductor Analyzer. Scattering parameters(-parameters)were measured using an HP8510C vector network analyzer from100MHz to40GHz, and in a wide bias current range based on circuit applications.A.Forward Base CurrentFig.2shows the plot of measured versus with the base–collector junction shorted for different total dose radiation, while the collector current remains approximately unchanged. As can be seen from thisfigure,at low current levels,the curve shows significant change after radiation.In the high current regime,almost has no change.The increase rate of base current,defined as the ratio of excess base current to pre-radiation base current,is plotted with incremental dose values,as shown in Fig.3.The increase rate increases with the total dose,and reaches620%at V after a gamma total dose of10Mrd(Si).However,as can be seen from Fig.3,the increase rate of base current versus decreases.In the regime of V,the increase rate becomes close to0.Fig.4shows the effect of the total dose on the excess base current for different total dose levels.The results presented are limited in the low injection current region where the excess base current remains significant compared with thevalue of the total base current.The excess basecurrent is approximately linear throughout the biasrange with a slope of the idea factor Fig.3.Increase rate of forward base current.Fig.4.Radiation-induced excess base current.Fig.5.versus collector current for different total dose levels..These results indicate that radiation-induced recombi-nation mechanism in the BE-SCR is more dominant in the ex-cess base current.Thus,it is reasonable that only the and parameters associated with the BE-SCR are improved in the novel model,as shown in(2).There are two possible recombination mechanisms in the BE-SCR to be consistent with the measured base current ide-ality factor[18].One is trap-assisted tunneling due to gamma radiation induced traps.The second possible mecha-nism is the recombination from a nonuniform distribution of Shockley–Read–Hall centers within the BE-SCR.B.Cutoff FrequencyThe cutoff frequency was extracted using-parameters measurements in the common-emitter configuration by extrap-olating.Fig.5shows measured versus collector current for different total dose levels.In general,relatively obvious degradation is observed for the GaAs HBT after10-Mrd(Si)ra-diation.4IEEE TRANSACTIONS ON MICROWA VE THEORY ANDTECHNIQUESing fly-backing fly-back measurement.The emitter series resistance was measured with the fly-back technique in which the emitter is grounded and current is forced into the base.The open circuit collector voltage was measured.The emitter resistance is taken as the slope of the linear segment of the curve.Fig.6shows the comparison of from fly-back measurement curves before and after 10-Mrd(Si)radiation.As can be seen from this figure,there is almost no change in .In the simpli fied VBIC model,includes the extrinsic col-lector resistance and intrinsic collector resistance .Fig.7shows from fly-back measurement curves to be similar to measurement.The value of is equal to the slope of the linear segment of the curve,and has no change after radiation.can be determined by optimizing the fitting to quasi-saturation region data of common-emitter char-acteristics.It can then be obtained that there is almost no change in .The possible reason for almost unchanged and after radiation is that the doped concentration in HBT devices is high,which makes radiation induced a little reduction of carrier con-centration causing no obvious increment in and .Fig.8shows the comparison of the capacitances for the GaAs HBT.The curves nearly coincide,suggesting that even after 10-Mrd(Si)total dose gamma radiation,the capacitances almost do not change.According to the measured results,it can be concluded that the degradation of is only due to the change of ,which validates the correctness of the discussion in Section II-B.IV .A NALYSIS AND D ISCUSSIONTo predict the electrical behavior of ICs for a given radiation total dose,designers usually need an ef ficient evaluation oftheFig.8.Capacitances (and )for GaAs HBT.TABLE I V ALUES OF,,,AND P ARAMETERS FOR P RE -R ADIATIONAND P OST -R ADIATION OF D IFFERENT R ADIATION L EVELSradiation parameters embedded in sensitive device model pa-rameters to determine the degradation of these parameters with dose.Such an approach permits an easy implementation for ra-diation-induced degradation in the electrical simulator,such as the Advanced Design System (ADS),by means of symbolically de fined device (SDD),which is an equation-based module to en-able designer to quickly and easily de fine custom and nonlinear components.Furthermore,this approach,which allows reason-able computation time,is generally preferred for the applica-tions of complex physics with large numbers of parameters.A.Forward Base CurrentTo extract the forward Gummel base current parameters,theand parameters can be determined from the inter-cept and the slope of the plot in the region of low .The values of and are then easily obtained by fitting the curve in the high injection region.The obtained ,,,and parameter values are listed in Table I for pre-radiation and post-radiation of different radiation levels.The extracted curves for and versus total dose are plotted in Fig.9(a)and (b),respectively.A saturation effect is exhibited for high total doses.The objective functions for fitting and are shown in (8)and (9),respec-tively,where Dose represents the gamma radiation total dose [in Mrd(Si)]and ,,,,,and are fitting parametersDose (8)Dose(9)As can be seen from Fig.9(a)and (b),the fitting curves of the first four dose levels (first four modeled)nearly coincide with that of all the five dose levels (modeled).The values of and at Dose Mrd(Si)obtained from the first four modeled,modeled,and measured are shown in Table II.ThereZHANG et al.:NOVEL MODEL FOR IMPLEMENTATION OF GAMMA RADIATION EFFECTS IN GaAs HBTs5(a)(b)Fig.9.(a)Comparison of the measured and modeled.(b)Comparisonof the measured and modeled.TABLE IIVALUES OFANDP ARAMETERS AT DoseMrd(Si)parison of the measured and first four modeled excess base cur-rent for 10-Mrd(Si)gamma radiation.are little deviations between the measured values and the firstfour modeled values.The error between the measured excess base current and the excess base current based on first four modeled is less than 5%for the fifth total dose 10Mrd(Si),as depicted in Fig.10.Thus,it can be concluded that the novel model should be able to pre-dict accurately the radiation-induced degradation in excess base current even after more than 10-Mrd(Si)gammaradiation.The measured and modeled forward base current for dif-ferent total doses is drawn in Fig.11.The modeled results parison of the measured and modeled forward base current for different total dose levels.TABLE IIIV ALUES OF,,,,AND P ARAMETER FOR P RE -R ADIATION AND P OST -R ADIATION OF D IFFERENT R ADIATION L EVELSmatch the measured data reasonably well (the error within 2%)up to V.The difference between the measured and modeled increases up to 3%for the high injection current region because our model does not account for the degradation of the NBR.However,this mismatch is still not bad.B.Cutoff FrequencyIn order to extract the transit time parameters,the forward transit time is obtained from the intercept of against the curve.The ,,,and param-eters of the transit time are further estimated by optimization.Table III presents the extracted ,,,,and parameter values for pre-radiation and post-radiation of dif-ferent radiation levels.It seems that parameters do not change much between pre-radiation and post-radiation.Since the most susceptible transistor materials to be sensitive to the total dose effect are insulators,the SiN insulator instead of oxides in the GaAs HBTs does not show serious degradation to the total dose effect.To describe the decrease of ,the following objective func-tion is used to describe excess forward transit time :Dose(10)where ,,and are fitting parameters.The measured and modeled versus total dose is pre-sented in Fig.12.The fitting curve based on the first four dose levels almost entirely coincides with that based on all five dose levels,suggesting that the novel model should be able to predict the degradation of cutoff frequency under more than 10-Mrd(Si)gamma radiation.The cutoff frequency versus is illustrated in Fig.13for different total dose levels with a maximum error less than 1%in the all-bias range.6IEEE TRANSACTIONS ON MICROWA VE THEORY ANDTECHNIQUESparison of the measured and modeled.parison of the measured and modeled cutoff frequency for dif-ferent total dose levels.V .C ONCLUSIONA novel model to include total dose effects for HBTs has been presented in this paper.To predict the behavior of ICs in space-like environments,semiempirical models for radiation parameters as a function of radiation total dose have been pro-posed.By incorporating the radiation parameters into sensitive model parameters,a novel model based on a simpli fied VBIC model has been implemented to simulate accurately the radia-tion-induced degradation in forward base current and cutoff fre-quency at least 10-Mrd(Si)gamma total dose.Our analysis also shows that the model can possibly predict the electrical charac-teristics of HBTs even more than 10-Mrd(Si)gamma radiation;however,further experimental study is required to prove the de-duction.R EFERENCES[1]S.M.Zhang,G.F.Niu,J.D.Cressler,S.J.Mathew,U.Gogineni,S.D.Clark,P.Zampardi,and R.L.Pierson,“A comparison of the effects of gamma radiation on SiGe HBT and GaAs HBT technologies,”IEEE Trans.Nucl.Sci.,vol.47,no.6,pp.2521–2527,Dec.2000.[2]S.Vuppala,C.S.Li,P.Zwicknagl,and S.Subramanian,“Neutron,proton and electron radiation effects in InGaP/GaAs single hetero-junc-tion bipolar transistors,”IEEE Trans.Nucl.Sci.,vol.50,no.6,pp.1846–1851,Dec.2003.[3]U.Karthaus,D.Sukumaran,S.Tontisirin,S.Ahles,A.Elmaghraby,L.Schmidt,and H.Wagner,“Fully integrated 39dBm,3-stage doherty PA MMIC in a low-voltage GaAs HBT technology,”IEEE Microw.Wireless Compon.Lett.,vol.22,no.2,pp.94–96,Feb.2012.[4]N.G.Constantin,P.J.Zampardi,and M.N.El-Gamal,“Automatichardware recon figuration for current reduction at low power in RFIC PAs,”IEEE Trans.Microw.Theory Techn.,vol.59,no.6,pp.1560–1570,Jun.2011.[5]K.Yamamoto,H.Kurusu,S.Suzuki,and M.Miyashita,“High-direc-tivity enhancement with passive and active bypass circuit techniques for GaAs MMIC microstrip directional couplers,”IEEE Trans.Mi-crow.Theory Techn.,vol.59,no.12,pp.3095–3107,Dec.2011.[6]E.P.Wilcox,S.D.Phillips,P.Cheng,T.Thrivikraman,A.Madan,J.D.Cressler,G.Vizkelethy,P.W.Marshall,C.Marshall,J.A.Babcock,K.Kruckmeyer,R.Eddy,G.Cestra,and B.Y.Zhang,“Single event transient hardness of a new complementary npn pnp SiGe HBT technology on thick-film SOI,”IEEE Trans.Sci.,57,no.6,pp.3293–3297,Dec.2010.[7]S.Díez,M.Lozano,G.Pellegrini,F.Campabadal,I.Mandic,D.Knoll,B.Heinemann,and M.Ullán,“Proton radiation damage on SiGe:C HBTs and additivity of ionization and displacement effects,”IEEE Trans.Nucl.Sci.,vol.56,no.4,pp.1931–1936,Aug.2009.[8]M.V.Uffelen,S.Geboers,P.Leroux,and F.Berghmans,“Spice mod-elling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels,”IEEE Trans.Nucl.Sci.,vol.53,no.4,pp.1945–1949,Aug.2006.[9]J.C.Zhang,Y.M.Zhang,H.L.Lu,Y.M.Zhang,and S.Yang,“Themodel parameter extraction and simulation for the effects of gamma ir-radiation on the DC characteristics of InGaP/GaAs single heterojunc-tion bipolar transistors,”Microelectron.Reliab.,Art.ID MR-D-11-00657,to be published.[10]X.Montagner,R.Briand,P.Fouillat,R.D.Schrimpf,A.Touboul,K.F.Galloway,M.C.Calvet,and P.Calve1,“Dose-rate and irradiation temperature dependence of BJT spice model rad-parameters,”IEEE Trans.Nucl.Sci.,vol.45,no.3,pp.1431–1437,Jun.1998.[11]X.Montagner,P.Fouillat,R.Briand,R.D.Schrimpf,A.Touboul,K.F.Galloway,M.C.Calvet,and P.Calvel,“Implementation of total dose effects in the bipolar junction transistor Gummel–Poon model,”IEEE Trans.Nucl.Sci.,vol.44,no.6,pp.1922–1929,Dec.1997.[12]C.C.McAndrew,J.A.Seitchik,D.F.Bowers,M.Dunn,M.Foisy,I.Getreu,M.McSwain,S.Moinian,J.Parker,D.J.Rouston,M.Schroter,P.van Wijnen,and L.F.Wagner,“VBIC95:The vertical bipolarinter-company model,”IEEE J.Solid-State Circuits ,vol.31,no.10,pp.1476–1483,Oct.1996.[13]S.V.Cherepko and J.C.M.Hwang,“VBIC model applicability andextraction procedure for InGaP/GaAs HBT,”in –Paci fic Mi-crow.Conf.,2001,pp.716–721.[14]W.Liu,“Switching characteristics and spice models,”in Handbook ofIII–V Heterojunction Bipolar Transistors .New York:Wiley,1998,pp.1088–1090.[15]J.C.Zhang,Y.M.Zhang,H.L.Lu,Y.M.Zhang,S.Yang,and P.Yuan,“A simpli fied VBIC model and SDD implementation for InP DHBT,”in IEEE Int.Electron Devices and Solid-State Circuits Conf.,Tianjin,China,2011,pp.1–2.[16]S.Yang,H.L.Lu,Y.M.Zhang,Y.M.Zhang,J.C.Zhang,and H.P.Zhang,“The effects of gamma irradiation on GaAs HBT,”in IEEE Int.Electron Devices and Solid-State Circuits Conf.,Tianjin,China,2011,pp.1–2.[17]J.Ge,Z.Jin,Y.B.Su,W.Cheng,X.T.Wang,G.P.Chen,and X.Y.Liu,“A physics-based charge-control model for InP DHBT including current-blocking effect,”Chinese Phys.Lett.,vol.26,no.7,pp.1–4,2009.[18]G.A.Schrantz et al.,“Neutron radiation effects on AlGaAs/GaAs het-erojunction bipolar transistors,”IEEE Trans.Nucl.Sci.,vol.35,no.6,pp.1657–1661,Dec.1988.Jincan Zhang,photograph and biography not available at time of publication.Yuming Zhang (M’01–SM’05),photograph and biography not available at time of publication.Hongliang Lu (M’07),photograph and biography not available at time of pub-lication.Yimen Zhang (SM’91),photograph and biography not available at time of pub-lication.Min Liu,photograph and biography not available at time of publication.。
迷迭香不同生长周期中迷迭香酸的积累动态研究
迷迭香不同生长周期中迷迭香酸的积累动态研究陈欣梦;崔文化;余素;边清泉【摘要】目的:研究不同采收期迷迭香中迷迭香酸的积累动态规律.方法:样品采用超声提取,高效液相色谱法测定迷迭香不同采收季节中迷迭香酸的含量.色谱柱:PLATISILTM ODS(250 mm ×4.6 mm,5μm),流动相为V (0.1%磷酸溶液):V(甲醇)=(46:54),流速:0.8(ml/min),检测波长为330 nm,柱温为35℃.结果:待测组分与其他组分分离度良好(R﹥1.5),迷迭香酸在0.348μg~6.96μg范围内呈良好的线性关系(r=0.9999);平均回收率为99.96%,RSD 为0.09%.迷迭香酸在一年生长期中的含量随着季节变化存在较为规律的梯度变化趋势,从1月开始,呈现出先降低-升高-降低-升高-降低-升高的趋势,在新芽生长期含量较低,秋冬季平均含量高于春夏季.结论:迷迭香酸的含量随植物生长期不同而变化,实验结果为迷迭香中迷迭香酸的含量测定及药材质量控制提供实验依据.%Objective:To study the accumulation dynamics of rosmarinic acid during a whole yearly period of Rosmarinus officinalis L. . Methods:Rrosmarinic acid was obtained by ultrasonic extraction,and its content was determined by HPLC. The column was PLATISILTMODS(250 mm × 4. 6 mm,5μm). 0. 1% phosphoric -metha-nol(volume ratio of46:546)was used as the mobile phase at a flow rate of 0. 8 ml/min. The UV detective wavelength was set at 330 nm,and the column temperature was set at 35℃. Results:Rosmarinic acid was well i-solated from other components,and the calibration curve showed a good linear correlation at 0. 348μg~6. 96μg. The average recovery was 99. 96%(RSD = 0. 09%). With the seasons change,the content of rosmarinic acid presents a regulargradient change in a yearly growing period. Since January,the content of rosmarinic acid pres-ents a trend of reducing - increasing - reducing- increasing-reducing- increasing. The content of rosmarin-ic acid is low in new buds growing periods,and the average content in autumn and winter was higher than that in spring and summer. Conclusion:The content of rosmarinic acid has a regular change with the change of growing periods. The experimental results provide experimental basis for the content determination of rosmarinic acid in Rosmarinus officinalis L. and the quality control of herbs.【期刊名称】《绵阳师范学院学报》【年(卷),期】2015(000)002【总页数】5页(P42-46)【关键词】迷迭香;迷迭香酸;高效液相色谱法;积累动态【作者】陈欣梦;崔文化;余素;边清泉【作者单位】绵阳师范学院化学与化学工程学院,四川绵阳 621000;绵阳师范学院化学与化学工程学院,四川绵阳 621000;绵阳师范学院化学与化学工程学院,四川绵阳 621000;绵阳师范学院化学与化学工程学院,四川绵阳 621000【正文语种】中文【中图分类】R282迷迭香(Rosmar inus of f icinalis L.)是唇形科迷迭香属植物,我国南方地区已有大量种植.迷迭香精油是传统的天然香料.从提取精油后的残渣中提取得到的迷迭香提取物是一种天然抗氧化剂,具有良好的抗氧化性能[1].国内外许多研究实验表明,迷迭香提取物具有一定的抗炎、抗溃疡、抗癌和抗艾滋病的作用,可望成为新药源[2~6].迷迭香抗氧化剂的主要成分是二萜酚类、黄酮类和少量的三萜类化合物.由抗氧化实验结果表明,具最高活性的提取物常含有以下8 种化合物,它们是鼠尾草酚、迷迭香酸、鼠尾草酸、咖啡酸、迷迭香酚、迷迭香二醛、芫花素和蓟黄素.抗氧化成分中的主要成分为迷迭香酸和鼠尾草酸,目前多采用HPLC 法测定[7~10].我国对迷迭香提取物的研究开始于1992年,后来着重对迷迭香酸的分离、纯化、含量测定以及药理进行了大量的研究[11-16].迷迭香酸作为迷迭香中最有效的抗氧化成分之一,已被美国食品药物管理局(FDA)认为是“公众安全食品”[17],迷迭香酸具有很强的抗氧化、抗炎、抗菌、抗病毒、免疫抑制等作用[18~20].目前迷迭香植物的研究主要归于迷迭香的抗氧化作用、药用价值研究以及迷迭香酸的提取工艺等,而没有注意迷迭香植物的各种不同时期的活性成分对照,本项目旨在研究迷迭香一年生长期活性成分的含量变化差异,为迷迭香成分提取和进一步深入研究提供参考.1 仪器与试药高效液相色谱系统(日本岛津公司,含LC 20AT 输液泵,CLASS(一)vp5.0 色谱工站,SPD-M20A 二极管阵列检测器,CTO(一)6A 柱温箱);SZ-93 型自动双重纯水蒸馏器(上海新诺仪器设备有限公司);AY120 电子天平(SHIMADZU);FW-177 中草药高速粉碎机(天津市泰斯特仪器由有限公司);KQ-250DE 型医用超声波清洗器(昆山市超声仪器有限公司);0.45 μm 微孔滤膜过滤头.水为一次蒸馏水并经过0.45 μm 微孔滤膜过滤,磷酸、甲醇均为分析纯;迷迭香酸(Rosmarinic acid,纯度>98.5%,上海永恒生物科技有限公司,批号20283-92-5).迷迭香,采自绵阳原香农业科技有限公司的国际香草园,经中国科学院成都分院生物所鉴定为迷迭香.2 方法与结果2.1 色谱条件迷迭香酸色谱柱:PLATISILTMODS (250 mm × 4.6 mm,5 μm),流动相为V(0.1%磷酸溶液):V(甲醇)=(46:54),流速0.8 mL/min 柱温35 ℃,进样量10 μL,检测波长330 nm.迷迭香提取物的的色谱图见图1.图1 迷迭香酸的HPLC 色谱图(A 为标准品,B 为样品)Fig.1 HPLC chromatograms of rosmarinic acid(A is reference substances,B is sample) 2.2 溶液的配置2.2.1 对照品溶液的配置精密称取迷迭香酸对照品8.7 mg,甲醇溶解并定容至25 mL,摇匀后,即得浓度为0.348 mg/mL的迷迭香酸对照品,备用.2.2.2 供试品溶液的配置迷迭香干叶粉碎后,称量1 g迷迭香粉末,用20 mL75%乙醇,超声40 min,0.45 μm 过滤取滤液即可得到迷迭香酸试品溶液.2.3 系统适应性试验分别取对照品和供试品各10 μL,按“2.1”项下对应的色谱条件进行测定,记录色谱图.结果得到迷迭香酸与其他物质完全分离.2.4 线性关系分别取对照样品1、2、5、10、15、20 μL,注入色谱仪,记录峰面积.以峰面积Y 为纵坐标,进样量(μg)为横坐标进行线性回归,得迷迭香酸的回归方程为Y=3.5 ×105X(μl)-3.4 ×105(r=0.99995),结果表明,迷迭香酸在0.348 μg~6.96 μg范围内与峰面积之间呈良好的线性关系.2.5 稳定性试验精密吸取迷迭香酸对照品溶液10 μL,于1、2、4、8、12、24 h 进行HPLC 分析,迷迭香酸的RSD 值为0.96%.表明混合对照品在24 h 内稳定.2.6 精密度试验精密吸取迷迭香酸对照品溶液6 次,进样量均为10 μL,迷迭香酸的RSD 值分别为0.92%,说明该仪器有良好的精密度,符合分析实验测定的要求.2.7 重复性试验照“2.2.2”项下方法制备5 批迷迭香的供试品溶液,取样品溶液各10 μL 进行HPLC 分析,迷迭香酸的RSD 值为0.90%,说明该方法有较好的重现性.2.8 加标回收率试验精密移取已知含量的供试品溶液5 份,分别移取迷迭香酸对照品适量,用0.45 μm 微孔滤膜过滤头过滤,进样1 μL,依2.1 色谱条件测定,重复3 次,迷迭香酸的回收率范围为99.8%~101.8%,平均回收率为100.3%,RSD=1.2%(n=3),回收率实验结果见表1,结果表明该方法有较高的精准度.表1 回收率实验结果(n=3)Tab.1 Results of recoveries of sample2.9 样品含量测定迷迭香每半月采摘,洗净晾干并粉碎,分别精密称取每次样品1.000 g,照“2.2.2”项下方法处理,分别进样10 uL,记录迷迭香酸的峰面积,经计算得到迷迭香中的迷迭香酸的含量.不同时期含量测定结果见表2,动态分析结果见图2. 表2 不同时期采集迷迭香中的迷迭香酸含量Tab.2 Contents of rosmarinic acid in different periods3 讨论3.1 提取条件的选择迷迭香酸具有一定的水溶性,75%乙醇超声40 min 最佳,在以上条件下迷迭香酸可基本提取完全.3.2 检测波长的选择对照品经紫外光谱扫描后,迷迭香酸在330 nm 处有一最大吸收峰,结合文献将检测波长确定为330 nm.3.3 洗脱条件的优化在比较不同酸中,加入磷酸可以明显改善峰型,减少拖尾.迷迭香酸选用V(甲醇):V(0.1%磷酸)=(54:46)分离效果最好,分离度好.3.4 迷迭香中迷迭香酸动态积累分析本次实验采集的迷迭香从2013.5月至2014.5月.表2 和图2 表明,迷迭香中迷迭香酸的含量随着季节变化而不同,含量差异不是太大.一年内含量变化在1.853%-2.371%之间,且呈现较为规律的梯度变化趋势,以一年生长期为例,一月中旬迷迭香酸含量为全年最大,然后一直下降,该段时间应为迷迭香生长新芽的季节,至5月底后又开始升高,6月达到一个峰值,又开始降低,至8月中旬达到一个谷底,8月底含量又明显回升至一个新峰值,然后缓慢下降,至11月初再达谷底,最后回升至最高峰.秋冬季含量均高于春夏季,同月份或者相邻两次的含量比较稳定,若要获得最佳的提取时机,应该选择在12月份到1月份之间.图2 不同采收期迷迭香中迷迭香酸的动态积累Fig.2 Accumulation dynamics of rosmarinic acid in Rosmarinus officinalis L.in different periods4 结论本文采用HPLC 法对迷迭香在一年生长期中迷迭香酸含量的积累动态进行了测定.结果表明迷迭香酸在一年生长期中的含量随着季节变化存在较为规律的梯度变化趋势,从1月开始,呈现出先降低-升高-降低-升高-降低-升高的趋势,在新芽生长期含量较低,秋冬季平均含量高于春夏季,该实验可为控制迷迭香药材的质量提供科学依据.参考文献[1]刘先章,赵振东,毕良武,等.天然迷迭香抗氧化剂的研究进展[J].林产化学与工业.2004,2(4):132.[2]吕岱竹,王明月,袁宏球,等.高效液相色谱法测定迷迭香超临界提取物中的鼠尾草酸和鼠尾草酚[J].分析测试学报,2006,25(3):109.[3]张保顺,袁吕江,冯敏,等.迷迭香天然抗氧化剂的研究及其应用[J].四川食品与发酵,2004,40(4):24-26.[4]Cole R,毕良武,赵振东.欧洲迷迭香的研究状况[J].生物质化学工程,2006,40(2):41-44.[5]刘士德,余玉雯,张建华,等.迷迭香抗氧化提取物的应用研究[J].食品科学,2003,24(2):95-99.[6]张婧,熊正英.天然抗氧化剂迷迭香的研究进展及应用前景[J].现代食品科技,2005,21(1):135-137.[7]黄捷,李丽莉.高效液相色谱法测定三蛇胆川贝糖浆中迷迭香酸的含量[J].药物分析杂志,2010,30(11):2188.[8]吴良,袁干军,苏秋玲,等.高效液相色谱法测定迷迭香中迷迭香酸的含量[J].海南医学院学报,2006,12(2):112.[9]邹盛勤,孙小青.超声辅助萃取RP-HPLC 法测定不同产地迷迭香中迷迭香酸含量[J].中国食品添加剂,2010,():223.[10]靳如义,安万学,潘相华.等.HPLC 法测定夏枯草口服液中迷迭香酸的含量[J].药物分析杂志,2009,29(6):1010.[11]张坤,许秋雁,叶小燕,等.RP-HPLC 法测定迷迭香中鼠尾草酸和迷迭香酸的含量[J].中南药学,2013,11(8):603.[12]陈宝,张立颖,沈芳,等.迷迭香总黄酮的提取工艺[J].食品研究与开发,2013,34(17):20.[13]Thorsen M A,Hildebrandt K S.Quantitative determination of phenolic diterpenesin rosemary extraets aspects of accurate quantification [J].Journal of Chromatography A,2003,995:119.[14]Weekesser S,Engel K.Simon-Haarhaus B,et al.Screening of plant extracts for antimicrobial activity against bacteria and yeasts with dermatological relevance[J].Phytomedicine,2007,14:508.[15]侯建春,吕晓玲,周平,等.迷迭香酸的稳定性研究[J].食品研究与开发,2009,30(3):44.[16]Moreno S,Seheyer,T.Romano C S,et al.Antioxidant and antimierobial activities of rosemary extracts linked to their polyphenol composition[J].Free Radic Res,2006,40(2):223.[17]孙峋,汪靖超,李洪涛,等.迷迭香酸的抗菌机理研究[J].青岛大学学报(自然科学版),2005,18(4):41.[18]WELLWOOD C R L,COLE R A.Relevance of carnosic acid concentrations to the selection of rosemary,Rosmarinus offcinalis(L.),accessions for optimization of antioxidantyield[J].J Agric Food Chem,2004,52(20):6101.[19]Lee J W,Park K S,K M JG,et al Combined effects of gamma irradiation and rosemary extract on the shelf-life of areadyto-eat hamburger steak[J].Radiation Physics and Chemistry,2005,72(1):49-56.[20]Debersac P,Vernevautm F,Amiotm T,et al.Effects of awater-soluble extrac tof rose mary and its purified component rosmarinic acid on xenobiotic-metabolizing enzymes in rat liver[J].Food andChemicalToxicology,2001,39(2):109.。
科技英语的翻译(汉译英)
科技英语的翻译
问题: those on chromosomes表示染色体的减少效应, 而不是染色体上的基因的减少效应。我们要的是 后者的意思。所以要写成those of genes。 Reduction effects是指粒重的减少效应,而不是 genes on chromosomes的减少效应,所以要加 上on grain weight。 改译为: The reduction effects of genes on chromosomes 1B and 2B on grain weight were obviously higher than those of genes on chromosomes 5A, 6B, 2D and 7D.
科技英语的翻译
例
2 The division frequency of protoplasts was lower in the liquid medium than that embedded in the medium containing agarose. 原生质体在液体培养基中的分裂频率低 于包埋在含有琼脂糖的培养基中的分裂 频率。
科技英语的翻译
例
2 Owing to these changes of basic equilibrium state, with the result that the basic characters of dynamics will be changed.
由于这些基本的平衡的变化,将导致动力学基
科技英语的翻译
问题: 两句是主从关系句。 改译为: The total area under natural protection reaches 19,330, which accounts for 2.1% of the total area of China.
60Co-γ射线辐照对茉莉花种子萌发和幼苗生长及生理的影响
热带作物学报2022, 43(1): 119 127 Chinese Journal of Tropical Crops收稿日期 2021-07-06;修回日期 2021-08-23基金项目 广西重点研发计划项目(桂科AB18221064);广西自然科学基金项目(No. 2020GXNSFAA297190);广西科技基地和人才专项(桂科AD17195065)。
作者简介 李春牛(1983—),男,硕士,副研究员,研究方向:园艺植物栽培与育种。
*通信作者(Corresponding author ):卜朝阳(BU Zhaoyang ),E-mail :**************。
60Co-γ射线辐照对茉莉花种子萌发和幼苗生长及生理的影响李春牛,李先民,黄展文,卢家仕,苏 群,王虹妍,卜朝阳*广西农业科学院花卉研究所,广西南宁 530007摘 要:以6种不同剂量(0、20、40、60、80、100 Gy )的60Co-γ射线辐照处理茉莉花[Jasminum sambac (L.) Ait]果实,观测其对茉莉花种子萌发、幼苗生长及生理的影响。
结果表明:(1)低剂量(20~40 Gy )60Co-γ射线辐照加快茉莉花种子萌发;高剂量(60~100 Gy )辐照推迟萌发,并极显著降低茉莉花种子生根率、根长及成苗率;随着辐照剂量的增加,幼苗株高先增后降,不同处理间差异显著,茎粗有降低的趋势,但除80 Gy 剂量处理外,其他处理与对照差异不显著。
(2)随着辐照剂量的增加,幼苗叶片中超氧化物歧化酶(SOD )活性先升后降,过氧化氢酶(CAT )活性极显著降低(P <0.01),过氧化物酶(POD )活性先降后升,丙二醛(MDA )含量出现波动,对照的含量与所有辐照处理均无显著差异。
(3)茉莉花种子幼苗叶片内叶绿素a 、叶绿素b 、叶绿素a+b 均随着辐照剂量的增加呈先降低后上升趋势,不同处理间差异极显著。
γ-聚谷氨酸对棉花生长与根际微生物的影响
2023 ,43(4) : 033J.SHANXI AGRIC, UNIV . ( N atural Science Edition )学报(自然科学版)04206γ-聚谷氨酸对棉花生长与根际微生物的影响陶龙锦1,2,张经博1,2,董正武1,3,马晓东1,2,涂永峰4,赵冬梅4,刘隋赟昊1,2*(1.新疆师范大学 生命科学学院,新疆 乌鲁木齐 830054;2.新疆特殊环境物种保护与调控生物实验室,新疆 乌鲁木齐830054;3.新疆特殊环境物种多样性应用与于调控重点实验室,新疆 乌鲁木齐 830054;4.新疆慧尔农业集团股份有限公司,新疆 昌吉 831100)摘要:[目的]我国是一个农业大国,肥料利用率低下制约农业发展。
如何提高肥料利用率成为我国农业发展的重要课题。
γ⁃聚谷氨酸(γ⁃PGA )因其特殊的分子结构,在提高肥料利用率方面显示了巨大潜力。
因此γ⁃PGA 的应用对实现农业和生态的可持续发展具有重要意义。
本文旨在探究棉花植株生长及根际土壤微生物对γ⁃PGA 的响应。
[方法]通过盆栽实验,利用高通量测序技术分析各处理土壤微生物群落。
[结果]稀释150倍的γ⁃PGA 显著促进棉花生长,株高增幅45.49%、茎粗增幅13.14%、主茎叶数增幅51.88%、果枝数增幅300.75%。
配施γ⁃PGA 后,土壤全磷、铵态氮、速效磷、速效钾含量显著提高,且在棉花采摘后依旧维持较高水平。
高通量测序结果显示γ⁃PGA 配施化肥会降低细菌的ACE 、Chao1、Simpson 、Shannon 指数,增加真菌的ACE 、Chao1、Simpson 、Shannon 指数。
配施γ⁃PGA 的采后土壤中变形菌门(Proteobacteria )相对丰度下降13.49%、放线菌门(Actinobacteriota )增加12.37%、芽单胞菌门(Gemma⁃timonadota )增加30.08%、拟杆菌门(Bacteroidota )下降6.93%、子囊菌门(Ascomycota )下降15.35%、担子菌门(Ba⁃sidiomycota )增加195.47%、被孢霉门(Mortierellomycota )下降10.49%。
Effects of afforestation on soil organic carbon and other soil properties土壤文章中文翻译
3. Material and methods
3.1 样点介绍
Site characteristics Location Altitude (m) Topography Black pine Hıdırlık 1235 Downslope Cedar Hıdırlık 1235 Downslope Bare land Hıdırlık 1235 Downslope
9.54 ± 0.95
10.48 ± 0.95 10.01 ± 1.03A 41.69 ± 3.40A
8.25 ± 0.83
8.41 ± 2.01 8.34 ± 1.49 B 30.24 ± 2.98 Ba
Total porosity (TP) %
10–20
Total 0–10 10–20 Total
1. Abstract
目的:这个研究主要是探究在土耳其阿卡亚地区半干旱土地,为了保持水土而 种植的南欧黑松和黎巴嫩雪松,15年后对土壤有机碳和其他土壤性质的影响; 实验方法:土壤样本取自3种土地利用类型,(黑松和雪松和裸地)两种土壤 深度,重复3次取样;测量指标包括土壤有机碳,容重,比重,土壤持水量, 和土壤空隙度。
Aspect
Slope % Parent material Plantation year Mean height of saplings (m)
NW
5–10 Marble 1998 3.11
NW
5–10 Marble 1998 3.72
NW
5–10 Marble – –
Mean diameter of saplings (cm)
Soil depth
4. Results
Soil properties Soil depth(cm) 0–10 10–20 Total Bulk density (BD) g/cm3 0–10 10–20 Total 0–10 10–20 Total 0–10 Clay % 10–20 Total 0–10 Sand % 10–20 Land use types Black pine 1.19 ± 1.74Aa 0.99 ± 1.82b 1.09 ± 1.75A 1.53 ± 0.11A 1.65 ± 0.09A 1.59 ± 0.11A 2.69 ± 0.13A 2.68 ± 0.18 2.69 ± 0.15A 6.88 ± 1.09 7.56 ± 0.87 7.24 ± 1.03 81.63 ± 2.46 81.63 ± 2.46 Cedar 1.49 ± 1.82Aa 0.82 ± 2.54b 1.13 ± 2.34A 1.58 ± 0.03A 1.51 ± 0.09B 1.55 ± 0.07A 2.73 ± 0.21A 2.69 ± 0.19 2.71 ± 0.20A 9.60 ± 2.29 7.87 ± 4.47 8.72 ± 3.56 77.91 ± 2.06 81.88 ± 5.04 Bare land 0.64 ± 1.69 Ba 0.44 ± 1.52b 0.54 ± 1.61 B 1.75 ± 0.09B 1.64 ± 0.11A 1.70 ± 0.11 B 2.52 ± 0.20B 2.62 ± 0.78 2.57 ± 0.01B 8.85 ± 1.34 7.84 ± 5.57 8.22 ± 3.26 77.17 ± 1.61 82.08 ± 1.23
翻译_TR 16_伽玛照射_Gamma Irradiation_1992
Effects of Gamma Irradiation on Elastomeric Closures伽马射线对橡胶容器的作用影响Table of Contents 内容列表(目录)MISSIO任务S1 INTRODUCTION 绪论S1 EXPEJXIMENTAL DESIGN 实验性设计S1 PHASE I-ELASTOMER SCREENING STUDY 人造橡胶的筛选研究S2 Materials and Methods 材料和方法1. Elastomers 人造橡胶2. Gamma Irradiation 伽马射线3. Test Methods 测试方法a) tensile strength 抗张强度b) elongation at break 断裂伸长率c) modulus 系数PHASE 11-ELASTOMER PERFORMANCE EV ALUATION第二阶段----人造橡胶的性能评估Materials and Methods 材料和方法1. Elastomers 人造橡胶2. Gamma Irradiation 伽马射线3. Test Methods 测试方法a) chemical tests 化学测试-turbidity 浑浊度-reducing agents 还原剂-heavy metals 重金属物-pH change PH值-total extractables 全部萃取物b) physical tests 物理测试-crosslink density 耦合密度-durometer measurement 硬度测量-compression set 压缩应变-surface characteristics 表面特征-viscoelasticity 粘弹性c) use related tests 应用相关的测试-coring 取芯-coefficient of friction 摩擦系数-tackiness 黏滞性-needle penetration force 穿透力4. Results 结果a) chemical tests 化学测试b) physical tests 物理测试-crosslink density 耦合密度-durometer measurement 硬度测量-compression set 压缩应变-surface characteristics 表面特征-viscoelasticity 粘弹性c) use related tests 应用相关的测试-coring 取芯-coefficient of friction 摩擦系数-tackiness 黏滞性-needle penetration force 穿透力TABLES 表格I. PDA Irradiation of Rubber Formulations 合成橡胶的配方的辐射PDAI-A. Formulation Ingredient Details 配方原料的详细资料11. PDA Irradiation of Rubber Formulations 合成橡胶的配方的辐射PDA-Physical Properties 物理属性111. Phase I1 Elastomer Formulations 第二阶段的人造橡胶配方IV. Dosimetry Summary Stoppers and Discs 瓶塞和圆盘的测试放射剂量概要V. Stopper Durometer Hardness Study 瓶塞硬度的研究VI. DMA Viscoelasticity DMA粘弹性FIGURES 图解1. Dumbbells for Physical Tests 哑铃状的物理测试效果图2. 20mm Stopper 20mm的瓶塞3. Typical Rheometer Curing Curve 典型的固化的流变曲线4. Compressiion Set Plugs 压缩应变测试的效果图5. Closure discs for DMA 用于DMA的封闭塑料圆盘6. Compression Set Device 压缩应变测试的设备7. Closure Disc Cut for DMA 用于封闭塑料圆盘的切片8. Turbidity 浑浊度9. Reducing Agents 还原剂10. pH shift PH值11. Total Extractables 全部的萃取物12. Crosslink Density 耦合度13. Durometer Measurement Manually Held Stoppers14. Compression Set 压缩应变15. Coring 取芯16. Coefficient of Friction 摩擦系数17. Needle Penetration Force 穿透力APPENDICES 附录I. Stopper Durometer Test Procedure 瓶塞硬度的测试流程11. Needle Penetration Force Test Procedure 穿透力的测试流程INTRODUCTION 绪论Traditionally dry or wet heat, or chemical sterilants such as ethylene oxide. However, heat sensitive polymeric packaging materials or drug products cannot tolerate autoclaving or dry heat sterilization. Disposal of ethylene oxide and its toxic degradation products is a growing concern with the environmentally conscious and aeration of these chemicals from the sterilized product requires time consuming handling procedures. As a result, radiation sterilization has increased in popularity as a sterilization process for medical devices, pharniaceutical processes and packaging. Yet even with the wide acceptance of radiation sterilization, consideration must be given to the medicament as well as the package to ascertain whether or not any deleterious effects have occurred as a result of irradiation。
中北生物工程专业介绍
所学专业
作物学 作物学 作物遗传育种 发育生物学 生药学 动物遗传学 细胞生物学 细胞生物学 军事化学与烟火技术 应用化学 作物营养学 生化与分子生物学 植物学 生物化工 动物学 安全工程 细胞生物学 生物化工 生物化学与分子生物学
11
科研成果
2005年来,承担各类科研课题 20 多项,其中 国家级课题 2 项,省级课题 6 项。参编“十一五” 规划教材 2 部,其它教材 4 部,发表学术论文 72 篇,其中SCI收录 12 篇,EI收录 2 篇。
工程、基因工程等基本理论、基本知识,掌握生物技术及其产 业化的科学原理、工艺技术过程和工程设计等基本能力,能在 生物技术及其工程领域从事生产操作、技术管理、工艺设计以 及新技术、新产品研究开发的应用型工程技术人才。
4
主干课程: 无机及分析化学、有机化学、物理化学、化工原理、普通
生物学、微生物学、生物化学、分子生物学(双语)、细 胞生物学。 基因工程(双语)、酶工程、细胞工程、发酵工程、生物 分离工程、生物工程设备与工厂设计、生物产品工艺学。
发表 日期 2006
2006
2005
2005
5
Effect of gamma irradiation on development, yield and quality of microtubers in vitro in potato (Solanum tuberosum L.)
Biologia Plantarum
4 新型抗旱环保生物种衣剂的研制与开发
省科技攻关
2005-2008
5 城市屋顶绿化及其配套技术研究
省高校科技开发 2007-2009
6 高粱A3胞质不育类型恢复性分子标记及其杂种优势利用 省科技攻关
219331996_抗辐射电子学研究综述
第 21 卷 第 4 期2023 年 4 月太赫兹科学与电子信息学报Journal of Terahertz Science and Electronic Information TechnologyVol.21,No.4Apr.,2023抗辐射电子学研究综述曾超,许献国,钟乐(中国工程物理研究院电子工程研究所,四川绵阳621999)摘要:抗辐射电子学是一门交叉性、综合性的学科,其研究的辐射效应规律、损伤作用机制、加固设计方法、试验测试方法、建模仿真方法等对极端恶劣环境中的电子系统的可靠工作至关重要。
对核爆炸中子、γ和X射线,空间和大气高能粒子产生的各种损伤效应(如瞬时剂量率效应、总剂量效应、单粒子效应、位移效应等)的研究现状进行了系统梳理。
对辐射之间、辐射和环境应力之间的协同损伤效应(如长期原子迁移对瞬时剂量率感生光电流的影响,中子和γ射线同时辐照与序贯辐照、单因素辐照的损伤差异,质子和X射线、中子辐照的损伤差异,γ射线辐照与环境氢气的协同损伤效应等)的研究进展进行了详细介绍。
阐述了国内外在核爆、空间和大气辐射加固研究方面的最新技术进展。
总结了国内外在地面实验室对空间、大气或核爆辐射各种效应进行试验模拟和建模仿真的相关能力。
最后对21世纪20年代以后抗辐射电子学研究领域潜在的挑战和关键技术进行了展望。
关键词:抗辐射;辐射效应;试验与测试;建模与仿真;协同效应中图分类号:TL7文献标识码:A doi:10.11805/TKYDA2023083A review of radiation-hardened electronicsZENG Chao,XU Xianguo,ZHONG Le(Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang Sichuan 621999,China)AbstractAbstract::Radiation hardened electronics is a crossed and compositive subject whose radiation effects, mechanisms of radiation damage, hardening methods,test methods and simulation methods arevery important for electronic system working in extreme environment. All kinds of damage effectsproduced by neutrons,gamma and X-rays from nuclear explosions and energetic particles from space andatmosphere are systemically hackled which includes dose rate effect,total ionizing effect,single eventeffect and displacement effect. The development of synergistic damage effects between radiation andenvironment and among different kinds of radiation are introduced in detail, including atom transfereffect on photocurrent,damage difference among single irradiation,serial irradiation and coinstantaneousirradiation of neutron and gamma ray,damage difference among proton,X-ray and neutron irradiation andsynergistic effect between hydrogen and gamma irradiation. Technique evolvement of nuclear explosive,space and atmosphere radiation hardening is expatiated on. The ground test equipments and simulationsoftware capabilities of nuclear,space and atmosphere radiation effects are summarized. Finally, thepotential challenges and key techniques in the field of radiation hardened electronics after the 2020s areprospected.KeywordsKeywords::radiation hardening;radiation effect;experiment and testing;modeling and simulation;synergistic effect抗辐射电子学是一门交叉性、综合性的学科,内容涉及核技术、电磁场与电离辐射、微电子技术、脉冲功率技术、数值计算技术以及电子部件及其元器件的辐射效应规律、损伤机理、加固方法、模拟方法等[1-15]。
黄曲霉毒素的生物降解研究进展
黄曲霉毒素的生物降解研究进展赵春霞;王轶;吕育财;程薇;郭鹏;崔宗均【摘要】黄曲霉毒素(Aflatoxins)是黄曲霉(Aspergillus flavus)、寄生曲霉(Aspergills parasiticus)等真菌的次级代谢产物,具有高毒性和致癌性,是饲料中主要的污染物之一.近年来黄曲霉毒素的降解成为研究热点,对黄曲霉毒素的特性、脱毒方式尤其是生物降解及其机理和降解产物的研究进展进行了综述.【期刊名称】《湖北农业科学》【年(卷),期】2016(055)020【总页数】5页(P5172-5176)【关键词】黄曲霉毒素;生物降解;微生物;脱毒方式【作者】赵春霞;王轶;吕育财;程薇;郭鹏;崔宗均【作者单位】三峡大学生物与制药学院,湖北宜昌443002;湖北省农业科学院农产品加工与核农技术研究所,武汉430064;湖北省农业科学院农产品加工与核农技术研究所,武汉430064;三峡大学生物与制药学院,湖北宜昌443002;湖北省农业科学院农产品加工与核农技术研究所,武汉430064;湖北省农业科学院农产品加工与核农技术研究所,武汉430064;中国农业大学农学与生物技术学院,北京100193【正文语种】中文【中图分类】Q936黄曲霉毒素(Aflatoxins)最早发现于1960年,当时在英国,大量火鸡因喂食发霉的花生饼粕而死亡,1961年科学家从花生饼粕中培养分离出一种霉菌,经鉴定其为黄曲霉(Aspergillus flavus),后来证实是该菌产生的黄曲霉毒素导致了火鸡突发性死亡[1]。
自此,科学家们开始了对黄曲霉毒素的深入研究。
黄曲霉毒素主要是由黄曲霉和寄生曲霉(Aspergillus parasiticus)等真菌产生的一类高毒性的次生代谢物[2]。
1993年世界卫生组织(WHO)将黄曲霉毒素划定为1级致癌物质。
黄曲霉毒素广泛存在于谷物与饲料原料中。
畜禽食用被黄曲霉毒素污染的饲料会引发疾病,通过食物链进入人体的毒素仍然具有高致癌性,严重威胁人类健康。
slug敲除促进γ-射线照射小鼠肠上皮细胞损伤的体内研究
Slug 敲除促进 酌-射线照射小鼠肠上皮细胞损伤的体内研究 *
李 鹏 1**袁朱庆丽 2袁宁 亮 3袁焦学龙 3袁陈 栋 3袁宫兴基 4袁贺东勇 4
渊青岛大学附属医院 1 内分泌科曰2 甲状腺外科曰3 普外科曰4 急诊内科袁山东 266003冤
[摘 要] 目的院观察 酌 射线照射对Slug 敲除 C57BL/6 小鼠肠粘膜上皮细胞损伤的影响及机制。方法院Slug 敲除
C57BL/6 小鼠和非 Slug 敲除 C57BL/6 小鼠各 12 只,以 8Gy 60Co酌 射线全身一次性照射制作动物模型,分别在照射后
第 1、3、8 天处死小鼠,取小肠组织 4%多聚甲醛液固定作病理学检查;取非 Slug 基因敲除小鼠和 Slug 基因敲除小鼠
各 24 只,予以 8Gy 60Co酌 射线全身一次性照射,分别在照射后第 2、4 和 24 h 处死,采用免疫组化法检测肠道细胞
PUMA 表达,TUNEL 染色检测细胞凋亡。结果院8Gy 60Co酌 射线照射后,Slug 基因敲除小鼠死亡率 91.67%,明显高于非
基因敲除小鼠的 25.00%,差异有统计学意义(P=0.004)。Slug 敲除小鼠肠道细胞凋亡指数、PUMA 阳性表达细胞数以
及肠道损伤的严重程度均明显高于非敲除组。结论院Slug 基因敲除加重 酌 射线引起的放射性肠道损伤。
交通医学 2020 年第 34 卷第 1 期 Med J of Communications,2020,Vol.34,渊2020冤01-0001-04
窑论著与基础研究窑
咱引文格式暂李鹏,朱庆丽,宁亮,等. Slug 敲除促进 酌-射线照射小鼠肠上皮细胞损伤的体内研究[J]. 交通医学,2020,34(1):1-3,7.
60Co-γ辐照对两个越南油茶品种幼苗的生理影响
接收日期:2023-03-21接受日期:2023-08-14基金项目:广东省重点领域研发计划项目(2020B020215003);广东省林业科技创新项目(2023KJCX003) *通信作者。
E-mail:***************.cn60Co-γ辐照对两个越南油茶品种幼苗的生理影响查钱慧1,2,黄久香2,吕铭滔2,龚勇军2,黄永芳2*(1. 广东省林业调查规划院,广东 广州 510520;2. 华南农业大学林学与风景园林学院,广东 广州 510642)摘 要:为了研究60Co-γ辐照对越南油茶Camellia drupifera 幼苗生理指标的影响,选取越南油茶璠龙3号C. drupifera ‘Fanlong 3’和璠龙5号C. drupifera ‘Fanlong 5’种子进行不同剂量60Co-γ辐照(0 Gy 、40 Gy 、50 Gy 、60 Gy 、70 Gy),并测定播种后幼苗叶片叶绿素含量、可溶性糖含量、可溶性蛋白含量及过氧化物酶(POD)、超氧化物歧化酶(SOD)活性。
结果表明,不同剂量60Co-γ辐照对越南油茶幼苗各项生理指标的影响结果不一致;璠龙3号与5号均表现为50 Gy 剂量组叶绿素含量最低,与其他组呈显著性差异(P <0.05);两种的可溶性糖含量变化趋势不一致,璠龙3号以60 Gy 剂量组最低,璠龙5号以70 Gy 剂量组含量最低;两种的可溶性蛋白含量变化趋势一致,均以60 Gy 剂量组可溶性蛋白含量最低;两种的抗氧化酶活性变化规律不一致,璠龙3号高剂量组(60 Gy 、70 Gy) SOD 活性较低,40 Gy 剂量组POD 活性最低,而璠龙5号SOD 活性对照组最低,70 Gy 剂量组最高,POD 活性则以60 Gy 剂量组为低,50 Gy 剂量组最高。
关键词:60Co-γ辐照;越南油茶;生理指标Doi: 10.3969/j.issn.1009-7791.2023.05.005中图分类号:Q945 文献标识码:A 文章编号:1009-7791(2023)05-0404-04Effects of 60Co-γ Irradiation on Physiological Indicators of Camellia drupiferaZHA Qian-hui 1,2, HUANG Jiu-xiang 2, LÜ Ming-tao 2, GONG Yong-jun 2, HUANG Yong-fang 2*(1. Guangdong Forestry Survey and Planning Institute, Guangzhou 510520, Guangdong China; 2. College of Forestry and LandscapeArchitecture, South China Agricultural University, Guangzhou 510642, Guangdong China)Abstract: In order to study the physiologic changes of Camellia drupifera seedlings after 60Co-γ irradiation, the authors did a 60Co-γ by 0 Gy, 40 Gy, 50 Gy, 60 Gy and 70 Gy irradiation of seeds from two excellent materials C. drupifera ‘Fanlong 3’ and ‘Fanlong 5’ and measured chlorophyll content, soluble sugar content, soluble protein content, peroxidase (POD), superoxide dismutase (SOD) in leaves. The result showed that the influence on physiologic index of C. drupifera of 60Co-γ irradiation by various kinds dose was different. The chlorophyll content of 50 Gy group of ‘Fanlong 3’ and ‘Fanlong 5’ were significantly lower than those of other groups (P <0.05). The change tends of soluble sugar content on ‘Fanlong 3’ and ‘Fanlong 5’ were different which showed that the 60 Gy of ‘Fanlong 3’ was relatively low and the 70 Gy of ‘Fanlong 5’ was relatively low. The change tends of soluble protein content on ‘Fanlong 3’ and ‘Fanlong 5’ were the same which showed that the soluble protein contents of 60 Gy treatment were relatively low. The change tends of antioxidant enzyme activity on ‘Fanlong 3’ and ‘Fanlong 5’ were different. The SOD activity of high dose group (60 Gy, 70 Gy) was relatively low and the POD activity of 40 Gy treatment was relatively high in ‘Fanlong 3’. The SOD activity of control group was relatively low and that of 70 Gy treatment was relatively high in ‘Fanlong 5’. The POD activity of 60 Gy treatment was relatively low and that of 50 Gy treatment was relatively high in ‘Fanlong 5’.Key words: 60Co-γ irradiation; Camellia drupifera ; physiologic index2023,52(5): 404~407.Subtropical Plant Science第5期查钱慧等:60Co-γ辐照对两个越南油茶品种幼苗的生理影响﹒405﹒越南油茶Camellia drupifera属山茶科Theaceae 山茶属Camellia油茶组Sect. Oleifera,是油茶栽培种之一,分布于越南、老挝及我国广东南部、海南、广西[1]。
不同γ-射线辐照剂量对鱼腥藻生长及生理特性的影响
不同γ-射线辐照剂量对鱼腥藻生长及生理特性的影响郑宾国;崔节虎;彭伟功;张继彪;郑正【摘要】[目的]研究γ-射线辐照对水华优势藻种——鱼腥藻生长及生理特性的影响,为蓝藻水华暴发的防治提供新方法.[方法]采用60 Co衰变产生的不同剂量γ-射线辐照鱼腥藻,分析γ-射线对鱼腥藻生长的影响,并探讨了辐照剂量(0,3,5,7,9,11 kGy)、溶液pH及外源物质(H2O2、抗坏血酸)对辐照效果的影响,在此基础上分析了不同辐照剂量γ-射线对鱼腥藻细胞内含物、抗氧化酶活性和丙二醛含量的影响,并采用扫描电镜和透射电镜分析了γ-射线辐照前后鱼腥藻细胞表面结构和内部结构的变化.[结果]经γ-射线辐照处理后,鱼腥藻的生长受到了明显的抑制,且抑制效果随辐照剂量的增加而增强.经剂量11 kGy的γ-射线辐照处理后培养5d,培养悬浮液中Chl-a质量浓度为0.18 mg/L,较未辐照前明显降低.酸性环境和H2O2促进了γ-射线辐照对鱼腥藻的抑制作用.11 kGy γ-射线辐照处理后鱼腥藻细胞内光合色素和总可溶性蛋白质量浓度与未经γ-射线处理鱼腥藻的百分比几乎降至为0.γ-射线辐照后藻细胞内SOD、POD和CAT活性随γ-射线辐照剂量的增大先增加后降低,细胞内丙二醛含量随γ-射线辐照剂量的增大而增加.扫描电镜和透射电镜观察结果显示,γ-射线辐照处理后的鱼腥藻细胞严重萎缩,细胞内类囊体溶解消失.[结论]γ-射线辐照对鱼腥藻生长的抑制作用明显,是一种高效、无二次污染,能有效防止鱼腥藻暴发的新技术.【期刊名称】《西北农林科技大学学报(自然科学版)》【年(卷),期】2013(041)008【总页数】7页(P182-188)【关键词】γ-射线;辐照处理;鱼腥藻;生理特性【作者】郑宾国;崔节虎;彭伟功;张继彪;郑正【作者单位】郑州航空工业管理学院资源与环境研究所,河南郑州450015;郑州航空工业管理学院资源与环境研究所,河南郑州450015;郑州航空工业管理学院资源与环境研究所,河南郑州450015;复旦大学环境科学与工程系,上海200433;复旦大学环境科学与工程系,上海200433【正文语种】中文【中图分类】X17水体富营养化是我国水域生态环境最常见污染类型之一。
不同红甜菜品种与火龙果中甜菜红色素含量的比对研究初报
不同红甜菜品种与火龙果中甜菜红色素含量的比对研究初报吴则东;刘乃新;吴玉梅;马龙彪【摘要】利用水萃取法分别对11个食用红甜菜品种块根和红心火龙果中的甜菜红色素进行提取测定,以检测不同食用红甜菜品种以及红甜菜和红心火龙果中甜菜红色素的差异.结果表明:11个红甜菜品种中,除了紫菜头、工大食甜1号、日本红甜菜和880274红色素含量较低外,其余品种红色素含量均较高,且美国红甜菜色素含量最高,紫菜头与日本红甜菜、必久和Pablo之间甜菜红色素差异不显著,其余样品红色素平均值之间均呈极显著差异,有8个红甜菜品种甜菜红色素的含量超过火龙果.本研究为以甜菜红色素为主要加工产品的企业和种植者在选择红甜菜品种上提供参考.【期刊名称】《中国糖料》【年(卷),期】2017(039)002【总页数】3页(P18-20)【关键词】红甜菜;甜菜红色素;火龙果;提取【作者】吴则东;刘乃新;吴玉梅;马龙彪【作者单位】黑龙江省普通高等学校甜菜遗传育种重点实验室,哈尔滨150080;中国农业科学院甜菜研究所/黑龙江大学农作物研究院,哈尔滨150080;中国农业科学院北方糖料作物资源与利用重点开放实验室,哈尔滨150080;农业部糖料产品质量安全风险评估实验室,哈尔滨150080;黑龙江省普通高等学校甜菜遗传育种重点实验室,哈尔滨150080;中国农业科学院甜菜研究所/黑龙江大学农作物研究院,哈尔滨150080;中国农业科学院北方糖料作物资源与利用重点开放实验室,哈尔滨150080;农业部糖料产品质量安全风险评估实验室,哈尔滨150080;黑龙江省普通高等学校甜菜遗传育种重点实验室,哈尔滨150080;中国农业科学院甜菜研究所/黑龙江大学农作物研究院,哈尔滨150080;中国农业科学院北方糖料作物资源与利用重点开放实验室,哈尔滨150080;农业部糖料产品质量安全风险评估实验室,哈尔滨150080;黑龙江省普通高等学校甜菜遗传育种重点实验室,哈尔滨150080;中国农业科学院甜菜研究所/黑龙江大学农作物研究院,哈尔滨150080;中国农业科学院北方糖料作物资源与利用重点开放实验室,哈尔滨150080【正文语种】中文【中图分类】S566.3;TS249.9甜菜红色素(Betalain)是一种天然的水溶性色素,广泛存在于石竹目中,如仙人掌科、藜科及苋科等[1]。
PDA技术报告清单2015
1.PDA技术报告清单(官网2015年更新)2.3.4.5.ValidationofMoistHeatSterilizationProcesses:CycleDesign,Development,QualificationandOngoingControlRevised2007(Published1980)湿热灭菌工艺考据:循环设计、研发、确认和连续控制,订正20073.ValidationofDryHeatProcessesUsedforDepyrogenationandSterilizationRevised2013(Published1981)010*******用于除热源和灭菌的干热工艺考据,订正20134.DesignConceptsfortheValidationofWater-for-InjectionSystems1983注射用水系统考据的设计看法,19835.SterilePharmaceuticalPackaging:CompatibilityandStability1984无菌制剂包装:相容性和稳固性,19847.Depyrogenation1985除热源,19859.ReviewofCommerciallyAvailableParticulateMeasurementSystems1988商业可采买的颗粒物检测系统审查,198810.ParenteralFormulationsofProteinsandPeptides:StabilityandStabilizers1988蛋白质和多肽注射制剂:稳固性和稳固剂,198811.SterilizationofParenteralsbyGammaRadiation1988静脉注射伽马辐射灭菌,198812.SiliconizationofParenteralDrugPackagingComponents1988静脉注射剂药品包装组分硅化办理,198813.FundamentalsofanEnvironmentalMonitoringProgramRevised2014(Published1990)环境监测计划原则,订正2014ValidationofColumn-BasedChromatographyProcessesforthePurificationofProteinsRevised2008(Published1992)蛋白纯化用柱色谱工艺考据,订正2008ValidationofTangentialFlowFiltrationinBiopharmaceuticalApplicationsRevised2009(Publish ed1992)生物制药用正切流过滤考据,订正200916.EffectofGammaIrradiationonElastomericClosures1992人造橡胶塞伽马辐射效应,199217.CurrentPracticesintheValidationofAsepticProcessing--19921993无菌工艺考据现行规范,1992,199318.ReportontheValidationofComputer-RelatedSystems1995计算机相关系统考据报告,199519.Rapid/AutomatedIDMethodsSurvey1990快速/自动ID方法检查,199020.ReportonSurveyofCurrentIndustryGowningPractices1990行业现行换衣规范检查报告,199021.BioburdenRecoveryValidation1990生物负载回收率考据,199022.ProcessSimulationforAsepticallyFilledProductsRevised2011(Published1996)无菌灌装药品工艺模拟,订正201123.IndustrySurveyonCurrentSterileFiltrationPractices1996现行无菌过滤实践行业检查,199624.CurrentPracticesintheValidationofAsepticProcessing–19961996无菌工艺考据现行规范,199625.BlendUniformityAnalysis:ValidationandIn-ProcessTesting1997混杂均一性解析:考据和中控测试,199726.SterilizingFiltrationofLiquidsRevised2008(Published1998)液体无菌过滤,订正200827.PharmaceuticalPackageIntegrity1998药品包装完好性,1998ProcessSimulationTestingforSterileBulkPharmaceuticalChemicalsRevised2006(Published1998) 无菌散装药用化学物工艺模拟测试,订正200629.PointstoConsiderforCleaningValidationRevised2012(Published1998)洁净考据的考虑重点,订正2012ParametricReleaseofPharmaceuticalsandMedicalDeviceProductsTerminallySterilizedbyMoistH eatRevised2012(Published1999)最后湿热灭菌的药物和医疗器材参数放行,订正2012ValidationandQualificationofComputerizedLaboratoryDataAcquisitionSystems1999计算机化实验室数据获得系统考据和确认,1999AuditingofSuppliersProvidingComputerProductsandServicesforRegulatedPharmaceuticalOpera tionsRevised2004(Published1999)供应受法规管理的药物操作用计算机产品和服务的供应商审计,订正2004Evaluation,ValidationandImplementationofAlternativeandRapidMicrobiologicalMethodsRevis ed2013(Published2000)代替性和快速微生物方法的评估、考据和实行,订正2013DesignandValidationofIsolateSystemsfortheManufacturingandTestingofHealthCareProducts20 01保健药品的生产和检测分别系统的设计和考据,200135.AProposedTrainingModelfortheMicrobiologicalFunctioninthePharmaceuticalIndustry2001制药行业微生物功能培训模式建议,200136.CurrentPracticesintheValidationofAsepticProcessing–20012002无菌工艺考据的现行规范--2001,200238.ManufacturingChromatographySystemsPost-ApprovalChanges:(ChromPAC):Chemistry,ManufacturingandControlsDocumentation2006同意后生产用色谱系统:研发、生产和控制文件,200639.GuidanceforTemperature-ControlledMedicinalProducts:MaintainingtheQualityofTemperature-SensitiveMedicinalProductsthroughtheTransportationEnvironment2007温度受控药物指南:经过运输环境来保护对温度敏感的药物的质量,200740.SterilizationFiltrationofGases2005气体的无菌过滤,200541.VirusFiltration2008病毒过滤,200842.ProcessValidationofProteinManufacturing2005蛋白质生产的工艺考据,200543.IdentificationandClassificationofNonconformitiesinMoldedandTubularGlassContainersforPharmaceuticalManufacturingRevised2013(Published2007)药物生产用模型制备和管式玻璃容器的鉴别和分类,订正201344.QualityRiskManagementforAsepticProcesses2008无菌工艺的质量风险管理,200845.FiltrationofLiquidsUsingCellulose-BasedDepthFilters2008使用纤维素基础深层过滤器的液体过滤,2008LastMile:GuidanceforGoodDistributionPracticesforPharmaceuticalProductstotheEnd User2009最后里程:给最后用户的药物优异销售规范指南,200947.PreparationofVirusSpikesUsedforVirusClearanceStudies2010用于病毒除去研究的病毒加标样制备,2010MoistHeatSterilizerSystems:Design,Commissioning,Operation,QualificationandMaintenance2 010湿热灭菌系统:设计、调试、运转、确认和保护,201049.PointstoConsiderforBiotechnologyCleaningValidation2010生物制品洁净考据考虑重点,201050.AlternativeMethodsforMycoplasmaTesting2010支原体测试代替性方法,2010BiologicalIndicatorsforGasandVapor-PhaseDecontaminationProcesses:Specification,Manufacture,ControlandUse2010 气体和蒸汽相除污染工艺生物指示剂:质量标准、生产、控制和使用,201052.GuidanceGoodDistributionPracticesforthePharmaceuticalSupplyChain2011药品供应链优异销售规范指南,201153.GuidanceforIndustry:StabilityTestingtoSupportDistributionofNewDrugProducts2011行业指南:支持新药销售的稳固性测试,2011ImplementationofQualityRiskManagementforPharmaceuticalandBiotechnologyManufacturingOpe rations2012药品和生物制品生产操作的质量风险管理实行,201254-2.ImplementationofQualityRiskManagementforPharmaceuticalandBiotechnologyManufacturingOperation:Annex1:CaseStudyExamplesforQualityRiskManagementinPackagingandLabeling2013药品和生物制品生产操作的质量风险管理实行,附录1:包装和表记中的质量风险管理事例研究,201354-3.ImplementationofQualityRiskManagementforPharmaceuticalandBiotechnologyManufacturingOperationsAnnex2:CaseStudiesintheManufacturingofPharmaceuticalDrugProducts2013药品和生物制品生产操作的质量风险管理实行,附录2:药品生产中的质量风险管理事例研究,201354-4.ImplementationofQualityRiskManagementforPharmaceuticalandBiotechnologyManufacturingOperationsAnnex3:CaseStudiesintheManufacturingofBiotechnologicalBulkDrugSubstances2015药品和生物制品生产操作的质量风险管理实行,附录3:生物散装药用物质生产中的质量风险管理事例研究,201355.DetectionandMitigationof2,4,6-Tribromoanisoleand2,4,6-TrichloroanisoleTaintsandOdorsinthePharmaceuticalandConsumerHealthcareInd ustries2012药物和保健行业中2,4,6-三溴苯甲醚和2,4,6-三氯苯甲醚污染平和味的检测和移除,201256.ApplicationofPhase-AppropriateQualitySystemsandCGMPtotheDevelopmentofTherapeuticProteinDrugSubstance2012治疗用蛋白质药用物质研发中与阶段相合适的质量系统和CGMP应用,201257.AnalyticalMethodValidationandTransferforBiotechnologyProducts2012生物制品的解析方法考据和转移,201258.RiskManagementforTemperature-ControlledDistribution2012温度受控销售风险管理,201259.UtilizationofStatisticalMethodsforProductionMonitoring2012生产监测用统计学方法使用,201260.ProcessValidation:ALifecycleApproach2013工艺考据:生命周期方法,201361.SteamInPlace2013就地蒸汽,201362.RecommendedPracticesforManualAsepticProcesses2013人工无菌工艺规范建议,201363.QualityRequirementsfortheExtemporaneousPreparationofClinicalTrial2013临床试验暂时制备药物的质量要求,201364.ActiveTemperature-ControlledSystems:QualificationGuidance2013在用温度控制系统:确认指南,201365.TechnologyTransfer2014技术转移,201466.ApplicationofSingle-UseSystemsinPharmaceuticalManufacturing2014药物生产中单次使用系统的应用,2014ExclusionofObjectionableMicroorganismsfromNonsterilePharmaceuticals,MedicalDevices,and Cosmetics2014非无菌药物、医疗器材和化妆品中致病菌除去201468.Risk-BasedApproachforPreventionandManagementofDrugShortages2014基于风险的药品存贮预防和管理,2014。
辐照对烧鸡贮藏期品质的影响
辐照对烧鸡贮藏期品质的影响李娜;骆琦;薛丽丽;何绍媛;刘常金【摘要】以真空包装的烧鸡为材料,研究电子束辐照处理对烧鸡品质的影响,辐照剂量为0、2、4、6、10 kGy.经辐照后,在37℃恒温培养箱贮藏0~25 d,研究不同辐照剂量下,烧鸡随不同贮藏时间(0、5、10、15、20、25 d)感官指标与品质的变化.结果表明:(1)贮藏期间,辐照烧鸡的菌落总数、硫代巴比妥酸值反应值(TBARS)、pH 值随辐照剂量的增加而降低;硬度、咀嚼性随剂量的增加而增加,且辐照组各项指标优于对照组.(2)在贮藏25 d时,2、4 kGy辐照处理组菌落总数超出国家卫生标准8000 cfu/g,而6、10 kGy处理组仍在国家允许范围内,且辐照剂量越高,其杀菌效果越好.(3)结合辐照对烧鸡菌落总数及感官评分的影响,辐照剂量以6 kGy为宜、在37℃恒温培养条件下烧鸡的保质期由对照组的不到10 d延长到25 d.由此可见,辐照能改善烧鸡的贮藏品质,杀菌效果显著,可为辐照保鲜烧鸡提供理论依据.%Samples of vacuum packaged roast chicken were irradiated by usinge lectron beam at 0, 2,4,6, and 10 kGy and stored at 37℃for 25 days to explore changes in sensory indicators and quality of roast chicken with different irradiation doses and storage times(0, 5,10,15,20, 25 days). The results showed that microbial quanti-ty, the thiobarbituric acid reactive value (TBARS) ,pH of roast chicken significantly decreased after irradia-tion, whereas the hardness and chewiness significantly increased during the storage, and the irradiation samples were better than the control simples.; the microbial quantity of 2, 4 kGy treated group exceeded national health standards, and 6, 10 kGy treated group was still within the range permitted by the state, and the higher the radiation dose, the better its sterilizationeffect;combining the effect of irradiation on sensory and micro-bial quality of roast chicken, the shelf life could be extended at 37℃from less than 10 days to 25 days treated with 6 kGy.It was concluded that irradiation could improve safely and effectively the storage quality of roast chicken, and it can provide a theoretical basis for the preservation of irradiated chicken.【期刊名称】《食品研究与开发》【年(卷),期】2017(038)008【总页数】5页(P183-187)【关键词】电子束辐照;烧鸡;贮藏;品质特性【作者】李娜;骆琦;薛丽丽;何绍媛;刘常金【作者单位】天津科技大学食品工程与生物技术学院,天津300457;天津科技大学食品工程与生物技术学院,天津300457;天津科技大学食品工程与生物技术学院,天津300457;唐山市施而得肉制品有限公司,河北唐山063000;天津科技大学食品工程与生物技术学院,天津300457【正文语种】中文我国目前著名的烧鸡品牌有道口烧鸡、德州扒鸡、常熟叫花鸡、符离集烧鸡、沟邦子熏鸡等[1]。
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Irradiated : 9.4 ] 7.9 i 6.9 1 7.5 31.7
A B C D Totals
-- 9,8 -- 20.1 -- 52.2 -- 49.2 --
269.8 I 152.1
J
LSD for P = 0.05 b e t w e e n sample means
and Jones 6. S a m p l e s o f t h e n a t u r a l a n d s y n t h e t i c a g g r e g a t e s a n d o f t h e purified polysaccharide w e r e i r r a d i a t e d a t a d o s e of 2.5 m e g a r a d s b y t h e A . E . R . A . a t V~Tantage.
Materials and Methods
The four solls used were all from the N.A.A.S. Experimental Husbandry Farm, Kirton, Lincs. and some of their characteristics are smnmarized in Table 1. Natural aggregates (2 mm) were removed by dry sieving. Synthetic aggregates (2 mm), both with and without polysaccharides were prepared by the method described by G r i f f i t h s and J o n e s 6. The polysaccharide used was isolated Irom cultures of the soil yeast L i p õ m y c e s starkeyi, (J o n e s and G r i f f i t h s ~) and incorporated in the aggregates at a concentration of 0.5 per cent. The stability of aggregates was determined by the water drop method ( M c C a l l a 8), details of the apparatus used being given by G r i f f i t h s
R e s u Z t s a~zd D i s c u s s i o n
T h e e f f e c t s o f i r r a d i a t i o n o n t h e s t a b i l i t y of n a t u r a l a n d s y n t h e t i c a g g r e g a t e s o f t h e f o u r s o i l s s t u d i e d a r e s u m m a r i z e d i n T a b l e 2. A n a l y s i s o f t h e s e d a t a f a i l e d t o r e v e a l a n y s i g n i f i c a n t e f f e c t of i r r a d i a t i o n o n e i t h e r t h e n a t u r a l aggregates or the synthetic aggregates which did not contain polysaccharide.
TABLE 2 Effect of g a m m a i r r a d i a t i o n (2.5 megrads) on s t a b i l i t y (water-drop method) of n a t u r a l a n d s y n t h e t i c a g g r e g a t e s of four Lineolnshire soils Natural aggregates Soil Not Irradiirradiated ated ! i 95.2 42.5 14.5 11.6 163.8 93.6 36.3 13.8 13,2 156.9 Change in stability after irradiation % -- 1.7 -- 14.6 -- 4.8 + 5.2 -Synthetic aggregates Not irradiated 9.5 8,1 7.1 7.7 32.4 Change in stability after irradiation % ----I 1.1 2.5 2,8 2.6 -Synthetic aggregates w i t h 0.5% p o l y s a e c h a r i d e Not irradiated 25.4 28.8 109:3 I 106.3 Change in stability Irradiafter a t e d ~ irradiation %
Plant and Soil X X V I I I , no. 1
February 1968
SHORT COMMUNICATION
E f f e c t s of G a m m a
Introduclion
Irradiation on Soil Aggregate
Stability
In all investigation of the effects of soll irradiation on plant growth, B o w e n and C a w s e 1 noted t h a t soils, which had received a dose of 2.5 megarads, dried out more slowly and t h a t the rate of percolation of water through the soff appeared to be reduced. They offered no explanation for these observations which would seem to indicate that irradiation had in some way affected soll structure. The nature of materials responsible for soil aggregation is still somewhat obscure. I t is well known t h a t extracellular polysaccharides of many soll micro-organisms are very effective aggregating agents but the extent to which they are important remains in doubt ( G r i f f i t h s õ). M e t h a et al. 9 working with a Swiss braunerde under forest, found t h a t selective oxidation of polysaccharides by periodate produeed no effect on aggregation. G r e e n l a n d et al. 4 obtained similar results with soils under permanent grass in Australia hut found that periodate treatment substantially reduced aggregares in solls from young leys, indicating t h a t in these latter instances, polysaccharides were making a significant contribution to aggregation. Gamma irradiation of potysaccharides produces degradation ( C o l l i n s o n and S w a l l o w 2) and it is also known ( G e o g h e g a n a) t h a t reduetion of the chain length of microbial polysaccharides reduces their capacity to aggregate solls. It seems possible therefore that irradiation may reduce aggregation in solls where this is due to microbial polysaccharides. In order to investigate this possibility a study was made of the effect of irradiation on natural and synthetic (polysaccharide amended) aggregates from a number of solls.
%
4912 67,7 73.4 68. t
%
15.0 7.5 6.8 17.5
O/o
30.0 12.5 5.8 6.3
go
3.7 3.7 9.3 3.1
419
5,1
* D e t e r m i n e d b y w a t e r - d r o p method. E a c h v a l u e r e p r e s e n t s the m e a n n u m b e r of w a t e r drops to d i s i n t e g r a t e 20 aggregates.