MRF6S21100NR1中文资料
IR2110中文资料
摘要：介绍了IR2110的内部结构和特点，高压侧悬浮驱动的原理和自举元件的设计。
针对IR2110的不足提出了几种扩展应用的方案，并给出了应用实例。
关键词：悬浮驱动；栅电荷；自举；绝缘门极1引言在功率变换装置中，根据主电路的结构，其功率开关器件一般采用直接驱动和隔离驱动两种方式。
采用隔离驱动方式时需要将多路驱动电路、控制电路、主电路互相隔离，以免引起灾难性的后果。
隔离驱动可分为电磁隔离和光电隔离两种方式。
光电隔离具有体积小，结构简单等优点，但存在共模抑制能力差，传输速度慢的缺点。
快速光耦的速度也仅几十kHz。
电磁隔离用脉冲变压器作为隔离元件，具有响应速度快（脉冲的前沿和后沿），原副边的绝缘强度高，dv/dt 共模干扰抑制能力强。
但信号的最大传输宽度受磁饱和特性的限制，因而信号的顶部不易传输。
而且最大占空比被限制在50％。
而且信号的最小宽度又受磁化电流所限。
脉冲变压器体积大，笨重，加工复杂。
凡是隔离驱动方式，每路驱动都要一组辅助电源，若是三相桥式变换器，则需要六组，而且还要互相悬浮，增加了电路的复杂性。
随着驱动技术的不断成熟，已有多种集成厚膜驱动器推出。
如EXB840/841、EXB850/851、M57959L/AL、M57962L/AL、HR065等等，它们均采用的是光耦隔离，仍受上述缺点的限制。
美国IR公司生产的IR2110驱动器。
它兼有光耦隔离（体积小）和电磁隔离（速度快）的优点，是中小功率变换装置中驱动器件的首选品种。
2IR2110内部结构和特点IR2110采用HVIC和闩锁抗干扰CMOS制造工艺，DIP14脚封装。
具有独立的低端和高端输入通道；悬浮电源采用自举电路，其高端工作电压可达500V，dv/dt=±50V/ns，15V下静态功耗仅116mW；输出的电源端（脚3,即功率器件的栅极驱动电压）电压范围10～20V；逻辑电源电压范围（脚9）5～15V，可方便地与TTL，CMOS电平相匹配，而且逻辑电源地和功率地之间允许有±5V的偏移量；工作频率高，可达500kHz；开通、关断延迟小，分别为120ns和94ns；图腾柱输出峰值电流为2A。
MRF6S20010GNR1;MRF6S20010NR1;中文规格书,Datasheet资料
Characteristic
Symbol
Min
Typ
Max
Unit
Typical 2 - Carrier W - CDMA Performances (In Freescale CDMA Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset.
MRF6S20010NR1 MRF6S20010GNR1
2 /
RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
MURS360B超快速电源二极管数据手册说明书
MURS360BUltrafast power diodeRev.02 - 1 August 2018Product data sheet1. General descriptionUltrafast power diode in a SMB surface-mountable plastic package.2. Features and benefits• Low on-state loss• Low leakage current• Low thermal resistance• Surface-mountable package• Reduces switching losses in associated MOSFET or IGBT3. Applications• Buck and Boost converter• Discontinuous Current Mode (DCM) Power Factor Correction (PFC)• Inverter freewheeling and protection diode4. Quick reference data5. Pinning information6. Ordering information7. Marking8. Limiting values Table 5. Limiting values9. Thermal characteristics10. Characteristics11. Package outline12. Legal informationData sheet status[1lease consult the most recently issued document before initiating or completing a design.[2]The term 'short data sheet' is explained in section "Definitions".[3]The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL .DefinitionsDraft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contai n detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeE n Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors productis deemed to offer functions and qualities beyond those described in the Product data sheet.DisclaimersLimited warranty and liability — Information in this document is believedto be accurate and reliable. However, WeEn Semiconductors does notgive any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors takes no responsibility for the content in this document if provided by an information source outside of WeEn Semiconductors.In no event shall WeEn Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors.Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-criticalor safety-critical systems or equipment, nor in applications where failureor malfunction of an WeEn Semiconductors product can reasonablybe expected to result in personal injury, death or severe property o r environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at th e customer’s own risk.Quick reference data — The Quick reference data is an extract of th e product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makesno representation or warranty that such applications will be suitable for the specified use without further testing or modification.Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applicationsand the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect.Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.Non-automotive qualified products — Unless this data sheet expressl y states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualifie d nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors forany liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications.]PTranslations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.13. Contents1. General description (1)2. Features and benefits (1)3. Applications (1)4. Quick reference data (1)5. Pinning information (2)6. Ordering information (2)7. Marking (2)8. Limiting values (3)9. Thermal characteristics (5)10. Characteristics (6)11. Package outline (7)12. Legal information (8)13. Contents (10)© WeEn Semiconductors Co., Ltd. 2018. All rights reservedFor more information, please visit: Forsalesofficeaddresses,pleasesendanemailto:**************************** Date of release: 1 August 2018。
IRS2110SPBF中文资料
• Fully operational to +500 V or +600 V • Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 10 V to 20 V
VOFFSET (IRS2110) (IRS2113)
Symbol
Definition
Min.
Max. Units
VB
High side floating supply voltage
(IRS2110) (IRS2113)
-0.3
520 (Note 1)
-0.3
620 (Note 1)
VS VHO VCC VLO VDD VSS VIN dVs/dt
PD
150
°C
TL
Lead temperature (soldering, 10 seconds)
—
300
Note 1: All supplies are fully tested at 25 V, and an internal 20 V clamp exists for each supply.
Recommended Operating Conditions
Typical Connection
14-Lead PDIP IRS2110 and IRS2113
16-Lead PDIP (w/o leads 4 & 5) IRS2110-2 and IRS2113-2
14-Lead PDIP (w/o lead 4) IRS2110-1 and IRS2113-1
VS + 20 500 600
IR2110相关知识(精华版)
请问怎么确定IR2110能驱动多大的MOS管啊？手册上IR2110的输出电压是10-20V，电流是2A，MOS管是电压驱动型，要2A的电流有什么用啊？随着PWM技术在变频、逆变频等领域的运用越来越广泛，以及IGBT、Power MOSFET等功率性开关器件的快速发展，使得PWM控制的高压大功率电源向着小型化、高频化、智能化、高效率方向发展。
本文采用电压脉宽型PWM控制芯片SG3525A，以及高压悬浮驱动器IR2110，用功率开关器件IGBT模块方案实现高频逆变电源。
另外，用单片机控制技术对此电源进行控制，使整个系统结构简单，并实现了系统的数字智能化。
SG3525A性能和结构SG3525A是电压型PWM集成控制器，外接元器件少，性能好，包括开关稳压所需的全部控制电路。
其主要特性包括：外同步、软启动功能；死区调节、欠压锁定功能；误差放大以及关闭输出驱动信号等功能；输出级采用推挽式电路结构，关断速度快，输出电流±400mA；可提供精密度为5V±1%的基准电压；开关频率范围100Hz~400KHz。
其内部结构主要包括基准电压源、欠压锁定电路、锯齿波振荡器、误差放大器等，如图1所示。
IR2110性能和结构IR2110是美国IR公司生产的高压、高速PMOSFET和IGBT的理想驱动器。
该芯片采用HVIC和闩锁抗干扰制造工艺，集成DIP、SOIC封装。
其主要特性包括：悬浮通道电源采用自举电路，其电压最高可达500V；功率器件栅极驱动电压范围10V~20V；输出电流峰值为2A; 逻辑电源范围5V~20V，而且逻辑电源地和功率地之间允许+5V的偏移量；带有下拉电阻的COMS施密特输入端，可以方便地与LSTTL和CMOS电平匹配；独立的低端和高端输入通道，具有欠电压同时锁定两通道功能; 两通道的匹配延时为10ns；开关通断延时小，分别为120ns和90ns;工作频率达500kHz。
其内部结构主要包括逻辑输入，电平转换及输出保护等，如图2所示。
MAX21100中文资料
%
-0.05 ±0.008 +0.05 %/°C
-6
±0.5
+6
dps
-0.15 ±0.025 +0.15 dps/°C
0.45
deg/√hr
Bias Stability
GBSTAB
4
deg/hr
Nonlinearity at +25°C (Note 5)
Low-Noise Mode Eco Mode, GODR = 250Hz
User selectable
MIN TYP MAX
±250 ±500 ±1000 ±2000 0.009 0.018
0.025
2
2000
UNITS
dps
dps/ √Hz Hz
Highpass Cutoff Frequency (Low-Noise Mode)
MAX21100
低功耗、超高精度6+3自由度的 惯性测量单元DoF IMU
Absolute Maximum Ratings
VDD........................................................................-0.3V to +6.0V VDDIO....................................................................-0.3V to +6.0V REGD....................................... -0.3V to min (VDD + 0.3V,+2.2V) INT1, INT2, SDA_SDI_O, SA0_SDO, SCL_CLK, CS, DSYNC,
菲尼克斯电气开关电源中文样本
INTERFACE创新电源——系统的可靠保证菲尼克斯电气中国公司地址：南京市江宁开发区菲尼克斯路36号南京江宁236信箱电话：(025)52121888传真：(025)52121555/800 8289722邮编：211100h t t p: //e-mail: phoenix@ CN 11/12 INTERFACE 创新电源TNR 5768710/10.2011-01 Printed In China© PHOENIX CONTACT2011突破性技术——电源解决方案创新促进发展。
菲尼克斯电气的电源产品无疑印证了这一宗旨。
在对理想的电源探索中，我们洞悉市场，与客户密切合作，坚持与执着，不断创造出卓越的新产品技术。
我们的目标是最大程度提高您的设备和系统的可用性。
QUINT电源提供最优产品功能，三个新产品系列在各自领域里树立了新的标杆。
新产品采用ACB技术的冗余模块ACB（自动电流平衡）技术可使您的冗余电源系统的使用寿命翻倍。
该技术确保一定范围内所有的电源平衡输出。
QUINT ORING冗余模块的ACB技术还可检测临界工作状态，并为您提供提前预警。
新产品采用IQ技术的不间断电源具有持续电池监控和智能管理功能的IQ技术可随时为您提供电池的充电状态、剩余工作时间和使用寿命等相关信息。
智能通信功能将预警您危险工况的出现。
这可减少维护工作量，提升系统可用性。
新产品采用SFB技术的DC/DC变换器SFB（选择性触发）技术可在一旦输出回路出现短路时，可靠地切断故障回路。
在短路情况下，将能提供6倍额定输出电流，维持12ms时间。
因此，SFB技术能够可靠地触发标准断路器。
您可快速地进行故障定位，并确保系统的重要设备继续工作。
——采用SFB技术为系统有效性提供最高保证新一代紧凑型QUINT电源，将最大程度地保证系统的有效性。
该电源采用SFB技术（选择性触发技术），能在12ms内输出６倍的额定电流，可靠快速地触发标准断路器脱扣。
ROHS测试仪器介绍
实验室仪器设备介绍1 微波消解/萃取仪名称：微波消解/萃取仪厂家：麦尔斯通Milestone型号：ETHOS A T260 最高工作温度：260℃最高工作功率：1000W作用：1.将固体样品消解为仪器能够测试的样品溶液。
2.萃取样品中的目标物质微波消解试样的原理称取的样品置于消解罐中，加入适量的酸。
通常是选用HNO3、HCI、HF、H2O2等，把罐盖好，放入炉中。
当微波通过试样时，极性分子随微波频率快速变换取向，2450MHz的微波，分子每秒钟变换方向2.45×109次，分子来回转动，与周围分子相互碰撞摩擦，使样品温度急剧上升，并产生大量的气体。
罐内迅速形成的高温高压使样品快速消解2 实验室仪器设备介绍－ICP/AES名称：电感耦合等离子体原子发射光谱仪ICP-AES厂家：博精PE型号：Optima 2100DV测试对象：镉Cd、铅Pb、汞Hg、总铬Cr也可以测试其他各种元素含量，74种。
ICP-AES工作原理：样品由载气(氩气)带入雾化系统进行雾化后，以气溶胶形式进入等离子体的轴向通道，在高温和惰性气氛中被充分蒸发、原子化、电离和激发，发射出所含元素的特征谱线。
根据特征谱线的存在与否，鉴别样品中是否含有某种元素(定性分析)；根据特征谱线强度确定样品中相应元素的含量(定量分析)。
3 实验室仪器设备介绍－UV/Vis名称：紫外-可见分光光度计UV-Vis厂家：岛津Shimadzu型号：UV-2450测试对象：六价铬Cr+6，甲醛从UV-Vis工作原理：光源辐射出的光，经仪器单色器分光后成为单色光。
当单色光通过溶液时，一部分被吸收，吸收的大小与溶液的厚度和浓度的关系符合朗伯－比尔定律。
朗伯－比尔定律为A＝lg(1/gT)＝εbc (1)式中A——溶液的吸光度T——溶液的透过率b——溶液厚度，cmc——溶液浓度，mol/Lε——摩尔吸收系数，1/mol·cm当光程长度和摩尔吸收系数一定时，吸光度A与溶液中待测组分浓度成正比，利用此定律进行定量分析4 实验室仪器设备介绍－GC/MS名称：气相色谱-质谱联用仪GCMS厂家：岛津Shimadzu型号：QP2010测试对象：多溴联苯PBBs多溴二苯醚PBDEs各种有机化合物实验室仪器设备介绍－GC/MSGCMS工作原理：GCMS利用气相色谱GC的分离能力让混合物中的组分分离，并用质谱MS鉴定分离出来的组分（定性分析）以及各个组分精确的量（定量分析）。
MRF101BN和MRF101AN RF 设备数据手册说明书
MRF101BN MRF101ANMRF101AN MRF101BN1RF Power LDMOS TransistorsHigh Ruggedness N--ChannelEnhancement--Mode Lateral MOSFETsThese devices are designed for use in VHF/UHF communications,VHF TV broadcast and aerospaceapplications as well as industrial,scientific and medical applications.The devices are exceptionally rugged and exhibit high performance up to 250MHz.Typical Performance:V DD =50VdcFrequency (MHz)Signal TypeP out (W)G ps (dB)ηD (%)13.56CW 130CW 27.179.627CW 130CW 24.081.540.68(1)CW 120CW 23.881.550CW 115CW 23.079.581.36CW 130CW 23.280.887.5–108CW 110CW 21.377.1136–174(2,3)CW104CW 21.276.5230(4)Pulse(100μsec,20%Duty Cycle)115Peak21.176.7Load Mismatch/RuggednessFrequency (MHz)Signal TypeVSWR P in (W)Test Voltage Result 40.68CW>65:1at all Phase Angles 0.64Peak (3dB Overdrive)50No Device Degradation 230Pulse(100μsec,20%Duty Cycle)>65:1at all Phase Angles1.8Peak (3dB Overdrive)50No Device Degradation1.Measured in 40.68MHz reference circuit (page 5).2.Measured in 136–174MHz VHF broadband reference circuit (page3.The values shown are the center band performance numbers across the indicated frequency range.4.Measured in 230MHz fixture (page 13).Features ∙Mirror pinout versions (A and B)to simplify use in a push--pull,two--up configuration∙Characterized from 30to 50V ∙Suitable for linear application∙Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation∙Included in NXP product longevity program with assured supply for a minimum of 15years after launchTypical Applications∙Industrial,scientific,medical (ISM)–Laser generation –Plasma etching –Particle accelerators–MRI and other medical applications–Industrial heating,welding and drying systems∙Radio and VHF TV broadcast ∙HF and VHF communications ∙Switch mode power supplies Document Number:MRF101ANRev.0,11/2018Technical Data1.8–250MHz,100W CW,50VWIDEBANDRF POWER LDMOS TRANSISTORSMRF101AN MRF101BNTO--220--3LMRF101BNTO--220--3LMRF101ANGSDDS GNote:Exposed backside of the packageand tab also serves as a source terminal for the transistor.BacksideSS2RF Device Data NXP SemiconductorsMRF101AN MRF101BN Table 1.Maximum RatingsRatingSymbol Value Unit Drain--Source Voltage V DSS –0.5,+133Vdc Gate--Source Voltage V GS –6.0,+10Vdc Operating VoltageV DD 50Vdc Storage Temperature Range T stg –65to +150︒C Case Operating Temperature Range T C –40to +150︒C Operating Junction Temperature Range (1,2)T J –40to +175︒C Total Device Dissipation @T C =25︒C Derate above 25︒CP D1820.91W W/︒CTable 2.Thermal CharacteristicsCharacteristicSymbol Value (2,3)Unit Thermal Resistance,Junction to CaseCW:Case Temperature 77︒C,150W CW,50Vdc,I DQ =100mA,40.68MHz R θJC 1.1︒C/W Thermal Impedance,Junction to CasePulse:Case Temperature 73︒C,113W Peak,100μsec Pulse Width,20%Duty Cycle,50Vdc,I DQ =100mA,230MHzZ θJC0.37︒C/WTable 3.ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JS--001--2017)1B,passes 1000V Charge Device Model (per JS--002--2014)C3,passes 1200VTable 4.Electrical Characteristics (T A =25︒C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff CharacteristicsGate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc)I GSS ——1μAdc Drain--Source Breakdown Voltage (V GS =0Vdc,I D =50mAdc)V (BR)DSS 133——Vdc Zero Gate Voltage Drain Leakage Current (V DS =100Vdc,V GS =0Vdc)I DSS——10μAdcOn CharacteristicsGate Threshold Voltage(V DS =10Vdc,I D =290μAdc)V GS(th) 1.7 2.2 2.7Vdc Gate Quiescent Voltage(V DS =50Vdc,I D =100mAdc)V GS(Q)— 2.5—Vdc Drain--Source On--Voltage (V GS =10Vdc,I D =1Adc)V DS(on)—0.45—Vdc Forward Transconductance (V DS =10Vdc,I D =8.8Adc)g fs—7.1—S1.Continuous use at maximum temperature will affect MTTF.2.MTTF calculator available at /RF/calculators .3.Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers.Go to /RF and search for AN1955.(continued)MRF101AN MRF101BN3RF Device DataNXP SemiconductorsTable 4.Electrical Characteristics (T A =25︒C unless otherwise noted)(continued)CharacteristicSymbolMinTypMaxUnitDynamic CharacteristicsReverse Transfer Capacitance(V DS =50Vdc ±30mV(rms)ac @1MHz,V GS =0Vdc)C rss —0.96—pF Output Capacitance(V DS =50Vdc ±30mV(rms)ac @1MHz,V GS =0Vdc)C oss —43.4—pF Input Capacitance(V DS =50Vdc,V GS =0Vdc ±30mV(rms)ac @1MHz)C iss—149—pFTypical Performance —230MHz (In NXP 230MHz Fixture,50ohm system)V DD =50Vdc,I DQ =100mA,P in =0.9W,f =230MHz,100μsec Pulse Width,20%Duty Cycle Common--Source Amplifier Output Power P out —115—W Power Gain G ps —21.1—dB Drain EfficiencyηD—76.7—%Table 5.Load Mismatch/Ruggedness (In NXP 230MHz Fixture,50ohm system)I DQ =100mAFrequency (MHz)Signal TypeVSWR P in (W)Test Voltage,V DDResult230Pulse(100μsec,20%Duty Cycle)>65:1at all Phase Angles1.8Peak (3dB Overdrive)50No Device DegradationTable 6.Ordering InformationDeviceShipping InformationPackageMRF101AN MPQ =250devices (50devices per tube,5tubes per box)TO--220--3L (Pin 1:Gate,Pin 2:Source,Pin 3:Drain)MRF101BNTO--220--3L (Pin 1:Drain,Pin 2:Source,Pin 3:Gate)4RF Device Data NXP SemiconductorsMRF101AN MRF101BNTYPICAL CHARACTERISTICS1100V DS,DRAIN--SOURCE VOLTAGE(VOLTS)Figure1.Capacitance versus Drain--Source Voltage C,CAPACITANCE(pF)1010000.1MRF101AN MRF101BN5RF Device DataNXP Semiconductors40.68MHz COMPACT REFERENCE CIRCUIT (MRF101AN)—0.7"⨯2.0"(1.8cm ⨯5.0cm)Table 7.40.68MHz Performance (In NXP Reference Circuit,50ohm system)V DD =50Vdc,I DQ =100mA,P in =0.50W,CWFrequency (MHz)P out (W)G ps (dB)ηD (%)40.6812023.881.56RF Device Data NXP SemiconductorsMRF101AN MRF101BN 40.68MHz COMPACT REFERENCE CIRCUIT (MRF101AN)—0.7"⨯2.0"(1.8cm ⨯5.0cm)Figure 2.MRF101AN Compact Reference Circuit Component Layout and Assembly Example —40.68MHzFigure 3.MRF101AN Compact Reference CircuitBoardaaa--032274Table 8.MRF101AN Compact Reference Circuit Component Designations and Values —40.68MHzPartDescriptionPart NumberManufacturer B1Short RF Bead 2743019447Fair-Rite C1,C582pF Chip Capacitor GQM2195C2E820GB12D Murata C2,C4200pF Chip Capacitor GQM2195C2A201GB12D Murata C333pF Chip Capacitor GQM2195C2E330GB12D Murata C6,C7,C8,C9,C101000pF Chip Capacitor GRM2165C2A102JA01D Murata C111μF Chip Capacitor GJ821BR71H105KA12L Murata C12,C1310nF Chip Capacitor GRM21BR72A103KA01B Murata C141μF Chip Capacitor C3216X7R2A105K160AA TDK L1150nH Chip Inductor 0805WL151JT ATC L217.5nH,4Turn Inductor GA3095-ACL Coilcraft L3160nH Square Air Core Inductor 2222SQ-161JEC Coilcraft L4110nH Square Air Core Inductor 2222SQ-111JEB Coilcraft Q1RF Power LDMOS Transistor MRF101ANNXP R175Ω,1/4W Chip Resistor SG73P2ATTD75R0F KOA Speer PCBFR40.09",εr =4.8,2oz.CopperD113958MTLMRF101AN MRF101BN7RF Device DataNXP SemiconductorsTYPICAL CHARACTERISTICS —40.68MHz COMPACT REFERENCE CIRCUIT (MRF101AN)V GS ,GATE--SOURCE VOLTAGE (VOLTS)8060P o u t ,O U T P U T P O W E R (W A T T S )40 3.52.51.51100120014020Figure 4.CW Output Power versus Gate--SourceVoltage at a Constant Input PowerP in ,INPUT POWER (WATTS)8060P o u t ,O U T P U T P O W E R (W A T T S )40010012001402040.68101121f (MHz)P1dB (W)P3dB (W)Figure 5.CW Output Power versus Input PowerP out ,OUTPUT POWER (WATTS)Figure 6.Power Gain and Drain Efficiencyversus CW Output PowerG p s ,P O W E R G A I N (d B )ηD ,D R A I N E F F I C I E N C Y (%)25242802090705030302223262729806040201004060801001201400.5230.10.20.30.40.50.60.721201008RF Device Data NXP SemiconductorsMRF101AN MRF101BN40.68MHz COMPACT REFERENCE CIRCUIT(MRF101AN)fMHzZ sourceΩZ loadΩ40.6824.0+j12.614.2–j2.5Z source=Testcircuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measuredfromdrain toground.Figure7.Series Equivalent Source and Load Impedance—40.68MHzZ source Z load50Ω50ΩMRF101AN MRF101BN9RF Device DataNXP Semiconductors136–174MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN)—0.7"⨯2.0"(1.8cm ⨯5.0cm)Table 9.136–174MHz VHF Broadband Performance (In NXP Reference Circuit,50ohm system)V DD =50Vdc,I DQ =100mA,P in =0.79W,CWFrequency (MHz)P out (W)G ps (dB)ηD (%)13511721.780.015510421.276.517510721.375.4136–174MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT(MRF101AN)—0.7"⨯2.0"(1.8cm⨯5.0cm)Figure8.MRF101AN Compact Reference Circuit Component Layout and Assembly Example—136–174MHzFigure9.MRF101AN Compact Reference Circuit BoardTable10.MRF101AN Compact VHF Broadband Reference Circuit Component Designations and Values—136–174MHz Part Description Part Number ManufacturerB1Short RF Bead2743019447Fair-RiteC139pF Chip Capacitor GQM2195C2E390GB12D MurataC2,C5,C6,C7,C8,C12510pF Chip Capacitor GRM2165C2A511JA01D MurataC368pF Chip Capacitor GQM2195C2E680GB12D MurataC427pF Chip Capacitor GQM2195C2E270GB12D MurataC910pF Chip Capacitor GQM2195C2E100FB12D MurataC111μF Chip Capacitor GJ821BR71H105KA12L MurataC1310nF Chip Capacitor GRM21BR72A103KA01B MurataC141μF Chip Capacitor C3216X7R2A105K160AA TDKL122nH Chip Inductor0805WL220JT ATCL212nH Chip Inductor0805WL120JT ATCL3,L4,L668nH Air Core Inductor1812SMS-68NJLC CoilcraftL512nH,3Turn Inductor GA3094-ALC CoilcraftQ1RF Power LDMOS Transistor MRF101AN NXPR175Ω,1/4W Chip Resistor SG73P2ATTD75R0F KOA SpeerPCB FR40.09",εr=4.8,2oz.Copper D113958MTLTYPICAL CHARACTERISTICS —136–174MHzCOMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN)20150f,FREQUENCY (MHz)26259085807565130120ηD ,D R A I N E F F I C I E N C Y (%)G p s ,P O W E R G A I N (d B )242322211715516016517070110P o u t ,O U T P U T P O W E R (W A T T S )14514017513519100180P in,INPUT POWER (WATTS)0P o u t ,O U T P U T P O W E R (W A T T S )806040200.40.61201000.20.8140 1.027202422807570G p s ,P O W E R G A I N (d B )20406026858025232110012014065605550ηD ,D R A I N E F F I C I E N C Y (%)Figure 10.Power Gain,Drain Efficiency and CW Output Power versus Frequency at a Constant Input PowerFigure 11.CW Output Power versus Input Power and FrequencyP out ,OUTPUT POWER (WATTS)Figure 12.Power Gain and Drain Efficiency versusCW Output Power and Frequency191817454035136–174MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT(MRF101AN)f MHz Z sourceΩZ loadΩ135 6.8+j10.29.5+j5.2145 6.2+j10.29.9+j5.9155 5.3+j10.810.2+j6.2165 4.4+j11.910.0+j5.9175 3.9+j13.48.8+j5.0Z source=Test circuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measured fromdrain to ground.Figure13.Series Equivalent Source and Load Impedance—136–174MHzZ source Z load50Ω50Ω230MHz FIXTURE(MRF101AN)—4.0"⨯5.0"(10.2cm⨯12.7cm)aaa--031939Figure14.MRF101AN Fixture Component Layout—230MHzTable11.MRF101AN Fixture Component Designations and Values—230MHzPart Description Part Number Manufacturer B1Long Ferrite Bead2743021447Fair-RiteC1,C2,C1018pF Chip Capacitor ATC100B180JT500XT ATCC343pF Chip Capacitor ATC100B430JT500XT ATCC4,C131000pF Chip Capacitor ATC800B102JT50XT ATCC50.1μF Chip Capacitor GRM319R72A104KA01D MurataC610nF Chip Capacitor C1210C103J5GACTU KemetC7 2.2μF Chip Capacitor C3225X7R1H225K TDKC847μF,16V Tantalum Capacitor T491D476K016AT KemetC951pF Chip Capacitor ATC100B510JT500XT ATCC1116pF Chip Capacitor ATC100B160JT500XT ATCC12470pF Chip Capacitor ATC800B471JW50XT ATCC140.1μF Chip Capacitor C1812104K1RACTU KemetC15 2.2μF Chip Capacitor C3225X7R2A225K TDKC16 2.2μF Chip Capacitor HMK432B7225KM-T Taiyo YudenC17220μF,100V Electrolytic Capacitor MCGPR100V227M16X26MulticompL139nH Chip Inductor1812SMS-39NJLC CoilcraftL246nH Chip Inductor1010VS-46NME CoilcraftL317.5nH,4Turn Inductor GA3095-ALC CoilcraftR1470Ω,1/4W Chip Resistor CRCW1206470RFKEA VishayPCB Rogers AD255C,0.030",εr=2.55,2oz.Copper D113651MTLTYPICAL CHARACTERISTICS —230MHz FIXTURE,T C =25_C (MRF101AN)0V GS ,GATE--SOURCE VOLTAGE (VOLTS)Figure 15.Output Power versus Gate--SourceVoltage at a Constant Input PowerP o u t ,O U T P U T P O W E R (W A T T S )P E A K755025 1.52 2.531251000.51P in ,INPUT POWER (dBm)PEAK 514943P o u t ,O U T P U T P O W E R (d B m )P E A K4733302127245318230110128f (MHz)P1dB (W)P3dB (W)Figure 16.Output Power versus Input PowerP out ,OUTPUT POWER(WATTS)PEAKFigure 17.Power Gain and Drain Efficiency versus Output Power and Quiescent CurrentG p s ,P O W E R G A I N (d B )ηD ,D R A I N E F F I C I E N C Y (%)3300806040203301080706050403020P out ,OUTPUT POWER (WATTS)PEAKFigure 18.Power Gain and Drain Efficiencyversus Output PowerG p s ,P O W E R G A I N (d B )ηD ,D R A I N E F F I C I E N C Y (%)0P out ,OUTPUT POWER (WATTS)PEAKFigure 19.Power Gain versus Output Powerand Drain--Source Voltage20G p s ,P O W E R G A I N (d B )16145075100182522150451001251503003002441393715230MHz FIXTURE (MRF101AN)f MHz Z sourceΩZ load Ω2302.1+j5.95.5+j3.2Z source =Test circuitimpedance as measured fromgate to ground.Z load=Test circuit impedance asmeasured from drain toground.Figure 20.Series Equivalent Source and Load Impedance —230MHzZ source Z load50Ω50ΩPACKAGE DIMENSIONSPRODUCT DOCUMENTATION,SOFTWARE AND TOOLS Refer to the following resources to aid your design process.Application Notes∙AN1955:Thermal Measurement Methodology of RF Power AmplifiersEngineering Bulletins∙EB212:Using Data Sheet Impedances for RF LDMOS DevicesSoftware∙Electromigration MTTF Calculator∙RF High Power Model∙.s2p FileDevelopment Tools∙Printed Circuit BoardsTo Download Resources Specific to a Given Part Number:1.Go to /RF2.Search by part number3.Click part number link4.Choose the desired resource from the drop down menuREVISION HISTORYThe following table summarizes revisions to this document.Revision Date Description 0Nov.2018∙Initial release of data sheetRF Device DataNXP Semiconductors How to Reach Us:Home Page: Web Support:/support Information in this document is provided solely to enable system and software implementers to use NXP products.There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document.NXP reserves the right to make changes without further notice to any products herein.NXP makes no warranty,representation,or guarantee regarding the suitability of its products for any particular purpose,nor does NXP assume any liability arising out of the application or use of any product or circuit,and specifically disclaims any and all liability,including without limitation consequential or incidental damages.“Typical”parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications,and actual performance may vary over time.All operating parameters,including “typicals,”must be validated for each customer application by customer’s technical experts.NXP does not convey any license under its patent rights nor the rights of others.NXP sells products pursuant to standard terms and conditions of sale,which can be found at the following address:/SalesTermsandConditions .NXP and the NXP logo are trademarks of NXP B.V.All other product or service names are the property of their respective owners.E 2018NXP B.V.MRF101BN MRF101AN。
MRF系列产品介绍
MRF系列产品介绍(仅其中一部分)型号功能MRF581 5G 0.6WMRF181 800-1G 10WMRF182 1G 30WMRF281 800-2.6G 4WMRF282 2.6G 20WMRF284 800-2.6G 30W 带螺丝座MRF20060 1.7-2.6G 60WMRF9045 9G 45WMRF5003 520M 15WMRF5007 520M 15WMRF1517 520M 15WMRF1507 520M 15WMRF1511 175M 15WMRF1518 175M 15WMRF553 175M 1.5W33P50 520M 1W2SK2595 1G 10WMRF10005960-1215 MHz, 5.0 W, 28 V 微波功率晶体管MRF10031960-1215 MHz, 30 W (Peak), 36 V 微波功率晶体管MRF10120960-1215 MHz, 120 W (Peak), 36 V 微波功率晶体管MRF101501025-1150 MHz, 150 W (Peak), 50 V 微波功率晶体管MRF103501025-1150 MHz, 350 W (Peak), 50 V 微波功率晶体管MRF105021025-1150 MHz, 500 W (Peak), 50 V 微波功率晶体管MRF134达到400 MHz, 5.0 W, 28 V N 宽带射频功率MOSFETMRF136达到400 MHz, 15 W, 28 V N 宽带射频功率MOSFET MRF141175 MHz, 150 W, 28 V N 宽带射频功率MOSFETMRF141G175 MHz, 300 W, 28 V N 宽带射频功率MOSFETMRF148A达到175 MHz, 30 W, 50 V N 宽带射频功率MOSFETMRF150达到150 MHz, 150 W, 50 V N 宽带射频功率MOSFETMRF151175 MHz, 150 W, 50 V N 宽带射频功率MOSFETMRF151G175 MHz, 300 W, 50 V N 宽带射频功率MOSFETMRF15480 MHz, 600 W, 50 V N 宽带射频功率MOSFETMRF157达到80 MHz, 600 W, 50 V N 宽带射频功率MOSFETMRF158达到500 MHz, 2.0 W, 28 V TMOS N 宽带射频功率FETMRF160500 MHz, 4.0 W, 28 V N 宽带射频功率MOSFETMRF160061.6 GHz, 6.0 W, 28 V 射频功率晶体管MRF160301.6 GHz, 30 W, 28 V RF 射频功率晶体管MRF166C500 MHz, 20 W, 28 V N 宽带射频功率MOSFETMRF166W500 MHz, 40 W, 28 V TMOS N宽带射频功率FETMRF171A150 MHz, 45 W, 28 V N 宽带射频功率MOSFETMRF173175 MHz, 80 W, 28 V N 宽带射频功率MOSFETMRF174200 MHz, 125 W, 28 V N 宽带射频功率MOSFETMRF177400 MHz, 100 W, 28 V N 宽带射频功率MOSFETMRF275G100–500 MHz, 150 W, 28 V N 宽带射频功率MOSFETMRF275L500 MHz, 100 W, 28 V N 宽带射频功率MOSFETMRF42630 MHz, 25 W, 28 V 射频功率晶体管NPN SiMRF587500 MHz, 15 V, NF = 3.0 dB, 高频晶体管MRFIC1818 1.7-1.9G 2WMRF183 1G 45WMRF187 800-960MHz 85WMRF7042 900MHz 45WMRF175 400MHz 200WMRF581 5G 0.6W2SK2596 800-960MHz 1.5WBFG10 25G 0.6VBFG21 18G 4.5V 0.5A 0.6WBFG403 17G 4.5V 16MA 0.3WBFG410 22G 4.5V 12MA 135MWBFG425 25G 4.5V 30MA 135MWBFG450 45G 0.2WBFG540 45G 3V 30MA 135MWBFG541 9G 0.6WBLT81 800-960M 1.2WTP3022 800-960M 15WTDA1576 ICSRF7062 800-960M 150WMHL9236 800-960M 3WMHL7008 800-960M 3WMHL9128 800-960M 3WATF10136 4G 0.4WCMM2308 800-2.7G 1WCMM1330 1.7-1.9G 2WPF0030 860-915M 7W终端负载50欧5W 3G,18G 驻波小于1.06高频电阻50欧100欧30W 100W 3G型号技术指标数量单价(US$) 型号技术指标数量单价(US$)MRF281 800-2.6G 4W 4K 10 BFG10 25G 0.6W 10K 1MRF282 800-2.6G 10W 4K 15 BFG21 18G 4.5V 0.5A 0.6W 5K 1MRF284 800-2.6G 30W 带螺丝座4K 20 BFG403 17G 4.5V 16MA 0.3W 5K 0.5 MRF20060 1.7-2.6G 60W 6K 30 BFG410 22G 4.5V 12MA 135MW 5K 0.5 MRF181 800-960M 10W 2K 10 BFG425 25G 4.5V 30MA 135MW 4K 0.5 MRF182 1G 30W 500PC 15 BFG450 45G 0.2W 1K 3MRFIC1818 1.7-1.9G 2W 2K 10 BFG540 45G 3V 30MA 135MW 2K 3MRF187 800-960M 85W 1K 30 BFG541 9G 0.6W 3K 0.5MRF7042 900M 45W 2K 15 BFG198 9G 1W 3K 0.5MRF9045 9G 45W 200PC 30 TP3022 800-960M 15W 4K 6MRF581 5G 0.6W 5K 0.5 TDA1576 IC 2K 2MRF5003 520M 15W 5K 3 SRF7062 800-960M 150W 2K 40MRF5007 520M 15W 5K 5 MHL9236 800-960M 3W 200PC 20MRF1517 520M 15W 2K 5 MHL7008 800-960M 3W 500PC 15MRF1507 520M 15W 2K 5 MHL9128 800-960M 3W 500PC 15MRF1511 175M 15W 2K 5 ATF10136 4G 0.4W 10K 1.5MRF1518 175M 15W 1K 5 CMM2308 800-2.7G 1W 10K 1.5MRF553 175M 1.5W 6K 0.5 CMM1330 1.7-1.9G 2W 5K 2MRF137 225MHz 30W 100PC 20 RF2125 1.5-2.2G 1W 1K 5MRF141 225MHZ 150W 100PC 40 PF0030 860-915M 7W 2K 2MRF151G 175MHz 300W 500PC 100 2SC1971 175MHz 7W 5K 1MRF154 150MHz 600W 500PC 200 2SC3356 6.5G 0.2W 5K 0.1MRF175G 500MHz 150W 500PC 100 2SC3357 6.5G 2W 5K 0.2MRF6404 1.8-2G 1K 10 2SC2407 500MHz 0.6W 10K 0.2BLT50 500M 1.2W 5K 0.6 2SC1906 1G 150MW 10K 0.05BLT81 400-960M 1.2W 3K 1 BLU98 5G 0.7W 5K 0.52SK2596 800-960M 1.5W 5K 0.5 33P55 800-960MHz 60W 5K 102SK2595 800-960M 10W 10K 3 E626 800-960Mhz 60W 5K 103SK228 1G 高放双栅管5K 0.15 终端负载50欧5W 3G,18G 驻波小于1.06 3K 10,100温补晶体12.8MHZ 贴片7x7M 5k 3 高频电阻50欧100欧30W 100W 3G 10k 2 MRF92822A 7W 手持对讲机/长距离无绳电话/车载台/手机专用功率发射晶体管集成电路ICMC3361 10K 0.1 HT9200 5K 0.2MC33110 5K 0.2 HT9170 5K 0.2MC34119 5K 0.1 93C66 5K 0.1LM386 5K 0.1 24C08 5K 0.2M54958 5K 1.5 EM92547 5K 0.2M64082 5K 0.5 KA4588 5K 0.1TB31202 5K 0.4 KA567 5K 0.1手机功放及常用元件型号技术指标数量单价(US$) 型号技术指标数量单价(US$)MRFIC0913 800-1000MHZ 2W 现货面议AP109 900MHZ 2W 现货面议27E31 900MHZ 2W 现货面议AP119 1800MHZ 2W 现货面议08K38 900MHZ 2W 现货面议4370451 900MHZ 2W 现货面议08K40 900MHZ 2W 现货面议4370453 1800MHZ 2W 现货面议08K07 900MHZ 2W 现货面议TRF6053 900MHZ 2W 现货面议08K11 900MHZ 2W 现货面议TRF2253 频率合成IC 现货面议PF01420B 900MHZ 2W 现货面议13MHZ 温补晶体现货面议PF01412A 1800MHZ 2W 现货面议881-942 声表滤波器现货面议PF01411B 900MHZ 2W 现货面议PF014110B 1800MHZ 2W 现货面议常用元件MRF5711 8G 0.33W 现货面议BFQ67 8G 0.3W 现货面议MRF5811 5G 0.7W 现货面议BFG540 9G 0.4W 现货面议MMBR941 8G 0.25W 现货面议BFR182W 8G 0.3W 现货面议MMBR503 1G 0.3W 现货面议BFR91 6G 0.3W 现货面议MMBR901 4G 0.3W 现货面议BU508 现货面议84UD22182EB-9C 现货面议Y759B 现货面议F741529AGHH 现货面议08122B 现货面议TWL3011GGM 现货面议089711747 现货面议LMST 现货面议LS28 现货面议。
场效应管参数大全2
型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK2518-01MR FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大200 20 502SK2519-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大200 10 402SK2520-01MR FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大200 10 302SK2521-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大200 18 502SK2522-01MR FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大300 18 402SK2523-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大450 9 602SK2524-01MR FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大450 9 402SK2525-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大450 9 802SK2526-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大900 5 602SK2527-01MR FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大900 5 402SK2528-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大900 4 802SK2529HITACHI N-MOSFET,用于高速功率开关60 50 35 2SK2530SANYO N-MOSFET,用于高速开关250 2 20 2SK2532SANYO N-MOSFET,通用开关应用250 10 40 2SK2533SANYO N-MOSFET,用于高速开关250 2 20 2SK2534SANYO N-MOSFET,通用开关应用250 16 502SK2538PANASONIC N-MOSFET,用于高速开关、高频功率放大250 2 302SK2539PANASONIC N-MOSFET,用于高频功率放大、模拟开关152SK2541NEC N-MOSFET,用于高速开关502SK2542TOSHIBA N-MOSFET,用于高速高电压开关、开关整流500 8 802SK2543TOSHIBA N-MOSFET,用于高速高电压开关、开关整流500 8 402SK2544TOSHIBA N-MOSFET,用于高速高电压开关、开关整流600 6 802SK2545TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器驱动和电动机驱动600 6 402SK2549TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器驱动和电动机驱动16 22SK2550TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器驱动和电动机驱动50 45 1002SK2551TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器驱动和电动机驱动50 50 1502SK2553HITACHI N-MOSFET,用于高速功率开关60 50 75 2SK2553L HITACHI N-MOSFET,用于高速功率开关60 50 75 2SK2553S HITACHI N-MOSFET,用于高速功率开关60 50 75 2SK2554HITACHI N-MOSFET,用于高速功率开关60 75 150型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK2559SHINDENGEN N-MOSFET,用于DC-DC转换、DC12-24V输入电源200 10 402SK2560SHINDENGEN N-MOSFET,用于DC-DC转换、DC12-24V输入电源200 20 602SK2561-01R FUJI N-MOSFET,功率放大,开关效应管600 9 802SK2562-01R FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大800 7 802SK2563SHINDENGEN N-MOSFET,用于AC 100-200V输入开关电源、换流、功率因素控制电路600 4 302SK2564SHINDENGEN N-MOSFET,用于AC 100-200V输入开关电源、换流、功率因素控制电路600 8 502SK2568HITACHI N-MOSFET,用于开关整流、DC-DC转换500 12 1002SK2569HITACHI N-MOSFET,用于低频功率开关502SK2570HITACHI N-MOSFET,用于低频功率开关202SK2570-01MR FUJI N-MOSFET,功率放大,开关效应管300 10 402SK2571PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源450 13 1002SK2571-01FUJI N-MOSFET,功率放大,开关效应管300 10 802SK2573PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源500 20 1002SK2573-01FUJI N-MOSFET,功率放大,开关效应管300 20 125 2SK2586HITACHI N-MOSFET,用于高速功率开关60 60 1252SK258H N-FET,高频放大（射频放大）,功率放大250 8 125 IRF2322SK2590HITACHI N-MOSFET,用于开关整流、DC-DC转换、电动机控制200 7 125502SK2592SANYO N-MOSFET,通用开关应用250 13 60 2SK2593PANASONIC N-MOSFET,用于低频放大、开关552SK2597NEC N-MOSFET,用于900MHz基站便携式电话功率放大60 15 2902SK2598TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动250 13 602SK2599TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动500 22SK259H N-FET,高频放大（射频放大）,功率放大350 5 125 IRF3232SK2601TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器和电动机驱动500 10 1252SK2602TOSHIBA N-MOSFET,用于高速高电压开关、开关整流600 6 1252SK2603TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动800 3 1002SK2604TOSHIBA N-MOSFET,用于高速高电压开关、开关整流800 5 1252SK2605TOSHIBA N-MOSFET,用于高速高电压开关、开关整流800 5 452SK2606TOSHIBA N-MOSFET,用于DC-DC转换、继电器和电动机驱动800 8 852SK2607TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动800 9 150型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK2608TOSHIBA N-MOSFET,用于高速高电压开关、开关整流900 3 1002SK260H N-FET,高频放大（射频放大）,功率放大400 5 125 IRF3222SK261N-FET,功率放大,音频(低频) IRF5122SK2610TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动900 5 1502SK2611TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器和电动机驱动900 9 1502SK2613TOSHIBA N-MOSFET,用于开关调整、DC/DC转换和电动机驱动300 32 2002SK2614TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动50 20 402SK2615TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器和电动机驱动60 22SK2616SANYO N-MOSFET,用于高速开关500 2 302SK2617ALS SANYO N-MOSFET,通用开关应用500 5 252SK2617LS SANYO N-MOSFET,通用开关应用500 4 252SK2618ALS SANYO N-MOSFET,通用开关应用500 302SK2618LS SANYO N-MOSFET,通用开关应用500 5 302SK262N-FET,功率放大,音频(低频) IRF613 2SK2623SANYO N-MOSFET,用于高速开关600 302SK2624ALS SANYO N-MOSFET,通用开关应用600 252SK2624FG SANYO N-MOSFET,通用开关应用600 252SK2624FS SANYO N-MOSFET,通用开关应用600 252SK2624LS SANYO N-MOSFET,用于高速开关600 3 252SK2625ALS SANYO N-MOSFET,通用开关应用600 5 302SK2625LS SANYO N-MOSFET,用于高速开关600 4 302SK2627SANYO N-MOSFET,用于高速开关600 5 402SK2628ALS SANYO N-MOSFET,通用开关应用600 7 352SK2628FG SANYO N-MOSFET,通用开关应用600 7 352SK2628FS SANYO N-MOSFET,通用开关应用600 7 352SK2628LS SANYO N-MOSFET,用于高速开关600 6 352SK263N-FET,功率放大,音频(低频) IRF613 2SK2631SANYO N-MOSFET,用于高速开关800 1 302SK2632LS SANYO N-MOSFET,通用开关应用800 252SK2638-01MR FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大450 10 50型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK2639-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大450 10 1002SK264N-FET,功率放大,音频(低频) IRF6122SK2640-01MR FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大500 10 502SK2641-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大500 10 1002SK2642-01MR FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大500 15 502SK2643-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大500 15 1252SK2645-01MR FUJI N-MOSFET,用于开关600 9 502SK2646-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大800 4 802SK2647-01MR FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大800 4 402SK2648-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大800 9 1502SK2649-01R FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大800 9 1002SK2651-01MR FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大900 6 502SK2652-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大900 6 1252SK2653-01R FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大900 6 802SK2654-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大900 8 1502SK2655-01R FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大900 8 1002SK266TOSHIBA 停产,N-FET,电容话筒专用15 PN4119A2SK2661TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动500 5 752SK2662TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器和电动机驱动500 5 352SK2663SHINDENGEN N-MOSFET,用于AC 240V输入开关电源、高压电源、换流900 1 102SK2664SHINDENGEN N-MOSFET,用于AC 240V输入开关电源、高压电源、换流900 3 502SK2665SHINDENGEN N-MOSFET,用于AC 240V输入开关电源、高压电源、换流900 3 502SK2666SHINDENGEN N-MOSFET,用于AC 240V输入开关电源、高压电源、换流900 3 302SK2667SHINDENGEN N-MOSFET,用于AC 240V输入开关电源、高压电源、换流900 3 652SK2668SHINDENGEN N-MOSFET,用于AC 240V输入开关电900 3 40源、高压电源、换流2SK2669SHINDENGEN N-MOSFET,用于AC 240V输入开关电源、高压电源、换流900 5 602SK2670SHINDENGEN N-MOSFET,用于AC 240V输入开关电源、高压电源、换流900 5 602SK2671SHINDENGEN N-MOSFET,用于AC 240V输入开关电源、高压电源、换流900 5 402SK2672SHINDENGEN N-MOSFET,用于AC 240V输入开关电源、高压电源、换流900 5 802SK2673SHINDENGEN N-MOSFET,用于AC 240V输入开关电源、高压电源、换流900 5 50型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK2674SHINDENGEN N-MOSFET,用于AC 240V输入开关电源、高压电源、换流900 7 1002SK2675SHINDENGEN N-MOSFET,用于AC 240V输入开关电源、高压电源、换流900 7 552SK2676SHINDENGEN N-MOSFET,用于AC 240V输入开关电源、高压电源、换流900 10 1202SK2677SHINDENGEN N-MOSFET,用于AC 240V输入开关电源、高压电源、换流900 10 652SK2679TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动400 352SK2682LS SANYO N-MOSFET,用于高速开关250 13 35 2SK2684HITACHI N-MOSFET,用于高速功率开关30 30 50 2SK2684L HITACHI N-MOSFET,用于高速功率开关30 30 50 2SK2684S HITACHI N-MOSFET,用于高速功率开关30 30 502SK2685HITACHI GAAS N-MOSFET,用于UHF低噪声放大62SK2687-01FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换30 50 602SK2688-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大30 50 602SK2689-01MR FUJI N-MOSFET,用于开关30 50 402SK2690-01FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换60 80 1252SK2691-01R FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大60 70 1002SK2695-01FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换700 5 602SK2698TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器和电动机驱动500 15 1502SK2699TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动600 12 1602SK270TOSHIBA 停产,用2SK389代替,N-FET,配对管,音频（低频）40 U4052SK2700TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动900 3 402SK2701SANKEN N-MOSFET 450 7 35 2SK2702SANKEN N-MOSFET 450 10 35 2SK2703SANKEN N-MOSFET 450 10 75 2SK2704SANKEN N-MOSFET 450 13 40 2SK2705SANKEN N-MOSFET 450 13 75 2SK2706SANKEN N-MOSFET 450 18 85 2SK2707SANKEN N-MOSFET 600 35 2SK2708SANKEN N-MOSFET 600 7 402SK2709SANKEN N-MOSFET 600 852SK271TOSHIBA 停产,用2SK405代替,N-FET,功率放大,音频（低频）140 8 120 2SK405型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK2710SANKEN N-MOSFET 600 12 85 2SK2715ROHM N-MOSFET，用于开关500 2 202SK2717TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器和电动机驱动900 5 452SK2718TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器和电动机驱动900 402SK2719TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动900 3 1252SK272TOSHIBA 停产,用2SK405代替,N-FET,功率放大,音频（低频）140 8 120 2SK2712SK2723NEC N-MOSFET,用于大电流开关60 25 252SK2724NEC N-MOSFET,用于大电流开关60 35 302SK2725HITACHI N-MOSFET,用于高速功率开关500 5 302SK2726HITACHI N-MOSFET,用于高速功率开关500 7 302SK2727HITACHI N-MOSFET,用于高速功率开关500 10 1002SK2728HITACHI N-MOSFET,用于高速功率开关500 18 1502SK2729HITACHI N-MOSFET,用于高速功率开关500 20 1502SK273GaAs,微波,超高频8 MGF-1400 2SK2730HITACHI N-MOSFET,用于高速功率开关500 25 1752SK2731ROHM N-MOSFET，用于开关302SK2733TOSHIBA路器、DC-DC转换和电动机驱动900 1 602SK2734HITACHI N-MOSFET,用于高速功率开关30 52SK2735HITACHI N-MOSFET,用于高速功率开关30 20 202SK2735L HITACHI N-MOSFET,用于高速功率开关30 20 202SK2735S HITACHI N-MOSFET,用于高速功率开关30 20 202SK2736HITACHI N-MOSFET,用于高速功率开关30 30 252SK2737HITACHI N-MOSFET,用于高速功率开关30 45 302SK2738HITACHI N-MOSFET,用于高速功率开关60 40 302SK274GaAs,微波,超高频8 MGF-1402 2SK2740ROHM N-MOSFET，用于开关600 7 302SK2741TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动60 52SK2742TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动100 32SK2744TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动50 45 1252SK2745TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动50 50 150型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK2746TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器和电动机驱动800 7 1502SK2749TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动900 7 1502SK275GaAs,微波,超高频8 MGF-14122SK2750TOSHIBA路器、DC-DC转换和电动机驱动600 352SK2751PANASONIC N-JFET,用于低频阻抗转换、红外传感器402SK2751J ON N-JFET,用于低频放大器、恒流源和阻抗转换等402SK2753-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大120 50 1502SK2754-01L FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大450 10 802SK2754-01S FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大450 10 802SK2755-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大450 18 1252SK2756-01R FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大450 18 802SK2757-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大500 10 802SK2758-01L FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大500 10 802SK2758-01S FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大500 10 802SK2759-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大500 15 802SK276GaAs,微波,超高频 62SK2760-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大600 9 602SK2761-01MR FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大600 10 502SK2762-01L FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大800 4 802SK2762-01S FUJI N-MOSFET,用于开关整流、UPS电源、800 4 80DC-DC转换、一般功率放大2SK2763-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大800 4 1002SK2764-01R FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大800 4 802SK2765-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大800 7 1252SK2766-01R FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大800 7 802SK2767-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大900 802SK2768-01L FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大900 802SK2768-01S FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大900 802SK2769-01MR FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大900 402SK277N-MOSFET,功率场效应管350 7 100 BUZ632SK2770-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大900 100型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK2771-01R FUJI N-MOSFET,用于开关900 9 100 2SK2775SANYO N-MOSFET,用于高速开关100 25 402SK2776TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动500 8 652SK2777TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动600 6 652SK2778SANKEN N-MOSFET 100 12 302SK2779SANKEN N-MOSFET 100 20 352SK278N-MOSFET,功率场效应管400 7 100 BUZ632SK2782TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动60 20 402SK2787LS SANYO N-MOSFET,通用开关应用450 8 40 2SK2788HITACHI N-MOSFET,用于高速功率开关60 2 12SK2789TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动100 27 602SK279GaAs,功率放大,微波,超高频8 1 MGF-1801 2SK2792ROHM N-MOSFET,用于开关600 4 302SK2793ROHM N-MOSFET,用于开关500 5 302SK2796HITACHI N-MOSFET,用于高速功率开关60 5 202SK2796L HITACHI N-MOSFET,用于高速功率开关60 5 202SK2796S HITACHI N-MOSFET,用于高速功率开关60 5 202SK2798SHINDENGEN N-MOSFET,用于AC 100V输入开关电源、高压电源、换流350 6 302SK2799SHINDENGEN N-MOSFET,用于AC 100V输入开关电源、高压电源、换流350 10 502SK280GaAs,功率放大,微波,超高频 5 NE13783 2SK2800HITACHI N-MOSFET,用于高速功率开关60 40 502SK2802HITACHI N-MOSFET,用于低频功率开关302SK2803SANKEN N-MOSFET 450 3 302SK2804SANKEN N-MOSFET 450 5 352SK2805SANKEN N-MOSFET 450 15 802SK2806-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大30 35 302SK2807-01L FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大30 35 302SK2807-01S FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大30 35 302SK2808-01MR FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大30 35 202SK2809-01MR FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大60 50 50第59页共120页型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK281GaAs,超高频,甚高频 5 NE218892SK2823TOSHIBA N-MOSFET,用于便携式仪表、高速开关、模拟开关202SK2824TOSHIBA N-MOSFET,用于便携式仪表、高速开关、模拟开关202SK2825TOSHIBA N-MOSFET,用于便携式仪表、高速开关、模拟开关202SK2826NEC N-MOSFET,用于大电流开关60 70 100 2SK2827-01FUJI N-MOSFET,用于开关600 9 602SK2828HITACHI N-MOSFET,高速功率开关,用于开关整流、DC-DC转换700 12 1752SK283N-FET,激励、驱动802SK2832-01FUJI N-MOSFET,用于开关60 50 80 2SK2833-R FUJI N-MOSFET,用于开关120 50 100 2SK2834-01FUJI N-MOSFET,用于开关600 9 802SK2835TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动200 52SK2836TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动600 12SK2837TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动500 20 1502SK2838TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动400 402SK2839TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动30 102SK283R3N-FET,激励、驱动80 2SK283R4N-FET,激励、驱动80 2SK283R5N-FET,激励、驱动80 2SK283R6N-FET,激励、驱动802SK2841TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动400 10 802SK2842TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动500 12 402SK2843TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动600 10 452SK2844TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动30 35 602SK2845TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动900 1 402SK2846TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动600 22SK2847TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器和电动机驱动900 8 852SK2848SANKEN N-MOSFET 600 2 30 2SK2849-01L FUJI N-MOSFET,用于开关200 18 502SK2849-01S FUJI N-MOSFET,用于开关900 6 125型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK2850-01FUJI N-MOSFET,用于开关200 18 50 2SK2851HITACHI N-MOSFET,高速功率开关60 52SK2854TOSHIBA N-MOSFET,用于UHF波段放大102SK2855TOSHIBA N-MOSFET,用于UHF波段放大10 12SK2856TOSHIBA N-MOSFET,用于UHF波段低噪声放大 32SK2858NEC N-MOSFET,用于高速开关302SK2859SANYO N-MOSFET,用于高速开关100 22SK286N-FET,功率放大,音频(低频) 60 8 1002SK2862TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器和电动机驱动500 3 252SK2864SANYO N-MOSFET,用于高速开关200 20 502SK2865TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动600 2 202SK2866TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动600 10 1252SK2869HITACHI N-MOSFET,高速功率开关60 20 302SK2870-01L FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大450 8 502SK2870-01S FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大450 8 502SK2871-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大450 8 502SK2872-01MR FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大450 8 302SK2873-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大450 8 602SK2874-01L FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大500 6 502SK2874-01S FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大500 6 502SK2875-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大500 6 502SK2876-01MR FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大500 6 302SK2877-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大500 6 602SK2879-01FUJI N-MOSFET,用于开关整流、UPS电源、DC-DC转换、一般功率放大500 20 1502SK287K N-FET,高频放大(射频放大),功率放大,开关60 8 1002SK2882TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动150 18 452SK2883TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动800 8 752SK2884TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换800 5 1002SK2885HITACHI N-MOSFET,高速功率开关30 45 75 2SK2885L HITACHI N-MOSFET,高速功率开关30 45 75型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK2885S HITACHI N-MOSFET,高速功率开关30 45 75 2SK2886TOSHIBA N-MOSFET,用于高速高电压开关、断路60 45 40器、DC-DC转换和电动机驱动2SK2887ROHM N-MOSFET,用于开关200 3 20 2SK2889ROHM N-MOSFET,用于开关600 10 1002SK288K N-FET,高频放大（射频放大）,功率放大,开关80 8 1002SK2890-01FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换30 50 502SK2891-01FUJI N-MOSFET,用于开关30 100 1252SK2892-01R FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换30 90 1002SK2893-01FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换30 100 1502SK2894-01FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换30 100 1252SK2895-01FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换60 45 602SK2896-01FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换60 45 602SK2897-01FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换60 45 402SK2898-01FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换60 100 1502SK2899-01R FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换60 100 1252SK289H N-FET,高频放大（射频放大）,功率放大,开关80 8 1002SK2900-01FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换60 45 602SK2901-01L FUJI N-MOSFET,用于开关60 45 60 2SK2901-01S FUJI N-MOSFET,用于开关60 45 602SK2902-01MR FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换60 45 402SK2903-01MR FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换60 50 502SK2904-01FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换60 80 1252SK2905-01R FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换60 70 1002SK2906-01FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换60 100 1502SK2907-01FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换60 100 1252SK2908-01FUJI N-MOSFET,用于电动机控制、一般功率放大、DC-DC转换600 9 602SK2909SANYO N-MOSFET,用于高速开关202SK290H N-FET,高频放大（射频放大）,功率放大,开关100 8 1002SK291HITACHI N-JFET,用于低频低噪声放大15 2SK2911SANYO N-MOSFET,用于高速开关100型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK2912HITACHI N-MOSFET,高速功率开关60 40 50 2SK2912L HITACHI N-MOSFET,高速功率开关60 40 50 2SK2912S HITACHI N-MOSFET,高速功率开关60 40 502SK2914TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动250 202SK2915TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动600 16 1502SK2916TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器和电动机驱动500 14 802SK2917TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动500 18 902SK2918-01FUJI N-MOSFET,用于开关200 20 80 2SK2919SANYO N-MOSFET,用于高速开关600 2 35 2SK292N-FET,调频,调谐202SK2920TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动200 5 202SK2922HITACHI N-MOSFET,高速功率开关10 3 2SK2925HITACHI N-MOSFET,高速功率开关60 10 20 2SK2925L HITACHI N-MOSFET,高速功率开关60 10 20 2SK2925S HITACHI N-MOSFET,高速功率开关60 10 20 2SK2926HITACHI N-MOSFET,高速功率开关60 15 25 2SK2926L HITACHI N-MOSFET,高速功率开关60 15 25 2SK2926S HITACHI N-MOSFET,高速功率开关60 15 25 2SK2927HITACHI N-MOSFET,高速功率开关60 10 30 2SK2928HITACHI N-MOSFET,高速功率开关60 15 40 2SK2929HITACHI N-MOSFET,高速功率开关60 25 50 2SK293N-FET,功率放大,音频(低频) 300 7 100 2SK2930HITACHI N-MOSFET,高速功率开关60 35 50 2SK2931HITACHI N-MOSFET,高速功率开关60 45 75 2SK2932HITACHI N-MOSFET,高速功率开关60 10 202SK2933HITACHI N-MOSFET,高速功率开关60 10 20 2SK2934HITACHI N-MOSFET,高速功率开关60 25 25 2SK2935HITACHI N-MOSFET,高速功率开关60 35 30 2SK2936HITACHI N-MOSFET,高速功率开关60 45 35 2SK2937HITACHI N-MOSFET,高速功率开关60 25 25型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK2938HITACHI N-MOSFET,高速功率开关60 25 50 2SK2938L HITACHI N-MOSFET,高速功率开关60 25 50 2SK2938S HITACHI N-MOSFET,高速功率开关60 25 50 2SK2939HITACHI N-MOSFET,高速功率开关60 35 50 2SK2939L HITACHI N-MOSFET,高速功率开关60 35 50 2SK2939S HITACHI N-MOSFET,高速功率开关60 35 50 2SK293A N-FET,功率放大,音频(低频) 300 7 100 2SK294N-FET,功率放大,音频(低频) 80 5 30 2SK2940HITACHI N-MOSFET,高速功率开关60 45 75 2SK2940L HITACHI N-MOSFET,高速功率开关60 45 75 2SK2940S HITACHI N-MOSFET,高速功率开关60 45 75 2SK2941NEC N-MOSFET,用于大电流开关30 35 602SK2949TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动400 10 802SK295N-FET,功率放大,音频(低频) 100 5 302SK2951SANYO N-MOSFET,用于高速开关200 12SK2952TOSHIBA N-MOSFET,用于高速高电压开关、断路器400 402SK2953TOSHIBA N-MOSFET,用于高速高电压开关、断路器、DC-DC转换和电动机驱动600 15 902SK2954-MR FUJI N-MOSFET,用于开关100 30 50 2SK2955HITACHI N-MOSFET,高速功率开关60 45 100 2SK2956HITACHI N-MOSFET,高速功率开关30 50 35 2SK2957HITACHI N-MOSFET,高速功率开关30 50 75 2SK2957L HITACHI N-MOSFET,高速功率开关30 50 75 2SK2957S HITACHI N-MOSFET,高速功率开关30 50 75 2SK2958HITACHI N-MOSFET,高速功率开关30 75 100 2SK2958L HITACHI N-MOSFET,高速功率开关30 75 100 2SK2958S HITACHI N-MOSFET,高速功率开关30 75 100 2SK296N-FET,功率放大,音频(低频) 300 1 302SK2961TOSHIBA N-MOSFET,用于高速开关、继电器、电动机驱动、DC-DC转换60 22SK2962TOSHIBA N-MOSFET,用于高速大电流开关、断路器、DC-DC转换和电动机驱动100 12SK2963TOSHIBA N-MOSFET,用于高速开关、DC-DC转换、继电器和电动机驱动100 1型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK2964TOSHIBA N-MOSFET,用于高速大电流开关、断路器、DC-DC转换和电动机驱动30 22SK2965TOSHIBA整流、DC-DC转换和电动机驱动200 11 352SK2967TOSHIBA N-MOSFET,用于高速开关、DC-DC转换、继电器和电动机驱动250 30 1502SK2968TOSHIBA N-MOSFET,用于高速开关、DC-DC转换、继电器和电动机驱动900 10 1502SK2969SANYO N-MOSFET,用于高速开关302SK2972TOSHIBA N-MOSFET,用于高速高电压开关、开关整流500 10 402SK2973MITSUBISHI N-MOSFET,用于VHF/UHF功率放大器172SK2974MITSUBISHI N-MOSFET,用于VHF/UHF功率放大器17 102SK2975MITSUBISHI N-MOSFET,用于VHF/UHF功率放大器30 102SK2976SANYO N-MOSFET,DC-DC转换30 15 202SK2977LS SANYO N-MOSFET,DC-DC转换30 30 302SK2978HITACHI N-MOSFET,高速功率开关20 12SK298N-FET,功率放大,音频(低频) 400 8 100 BUP61 2SK2980HITACHI N-MOSFET,高速功率开关30 12SK2981NEC N-MOSFET,用于大电流开关30 20 202SK2983NEC N-MOSFET,用于大电流开关30 30 502SK2984NEC N-MOSFET,用于大电流开关30 40 602SK2985TOSHIBA N-MOSFET,用于大电流开关、DC-DC转换、继电器和电动机驱动60 45 452SK2986TOSHIBA N-MOSFET,用于大电流开关、DC-DC转换、继电器和电动机驱动60 55 1002SK2987TOSHIBA N-MOSFET,用于大电流开关、DC-DC转换、继电器和电动机驱动60 70 1502SK2989TOSHIBADC-DC转换和电动机驱动50 52SK299N-FET,功率放大,音频(低频) 450 8 100 BUZ462SK2991TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器和电动机驱动500 5 502SK2992TOSHIBA N-MOSFET,用于高速大电流开关、断路器、DC-DC转换和电动机驱动200 12SK2993TOSHIBA N-MOSFET,用于高速大电流开关、断路器、DC-DC转换和电动机驱动250 20 1002SK2995TOSHIBA N-MOSFET,用于高速大电流开关、断路器、DC-DC转换和电动机驱动250 30 902SK2996TOSHIBA N-MOSFET,用于高速大电流开关、断路器、DC-DC转换和电动机驱动600 10 452SK2998TOSHIBA N-MOSFET,用于高速高压开关、断路器、DC-DC转换5002SK30TOSHIBA 停产,用2SK30ATM代替,N-FET,音频(低频)50 BF2442SK300SONY N-FET,高频放大（射频放大）,甚高频,视频15 2SK152型号PDF资料厂商特性用途极限电压Vm(V)极限电流Im(A)耗散功率(W)代换型号2SK30-0TOSHIBA 停产,用2SK30ATM代替,N-FET,音频(低频)502SK3000HITACHI N-MOSFET,低频功率开关40 12SK3004SANKEN N-MOSFET 250 18 35 2SK3009SHINDENGEN N-MOSFET,低频功率开关600 8 60 2SK301PANASONIC 硅N-JFET,用于低频放大、开关，55V/ 552SK3012SHINDENGEN N-MOSFET,用于AC 100-200V输入开关电源、换流、功率因素控制电路600 12 1252SK3013SHINDENGEN N-MOSFET,用于AC 100-200V输入开关电源、换流、功率因素控制电路600 16 702SK3017TOSHIBA N-MOSFET,用于高速高电压开关、DC-DC转换、继电器和电动机驱动900 902SK3018ROHM N-MOSFET,小开关，用于便携仪表302SK3019ROHM N-MOSFET,小开关，用于便携仪表302SK301A PANASONIC 硅N-JFET,用于AF放大、开关，55V/ 552SK302TOSHIBA N-MOSFET,用于FM调谐、VHF RF 放大20 TM0104N82SK3022PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源60 5 102SK3023PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源60 10 102SK3024PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源60 20 202SK3025PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源60 30 202SK3026PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源60 40 502SK3027PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源60 50 602SK3028PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源60 100 1002SK3029PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、100 5 10开关电源2SK303SANYO N-JFET,低频一般放大30 2SK3042SK3030PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源100 8 102SK3031PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源100 15 202SK3032PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源100 25 102SK3033PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源100 40 602SK3034PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源100 40 602SK3035PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源150 3 102SK3036PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源150 6 202SK3037PANASONIC N-MOSFET,用于不接触继电器、螺线管驱动电路、电动机驱动电路、控制仪器、开关电源150 10 202SK303J ON N-JFET,硅N沟道结型场效应管,用于电压计、传感器、模拟开关、麦克风、音频设备。
瑞萨电子ISL2110、ISL2111 100V、3A 4A Peak高频半桥驱动器说明书
FN6295Rev.8.00April 18, 2022ISL2110, ISL2111100V, 3A/4A Peak, High Frequency Half-Bridge DriversDATASHEETThe ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak outputpull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the V DD operational supply range has been extended to 8VDC. The ISL2110 has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL2111, like those of the ISL2110, can now safely swing to the V DD supply rail.Applications•Telecom half-bridge DC/DC converters •Telecom full-bridge DC/DC converters •Two-switch forward converters •Active-clamp forward converters •Class-D audio amplifiersFeatures•Drives N-Channel MOSFET half-bridge •SOIC, DFN, and TDFN package options•SOIC, DFN, and TDFN packages compliant with 100V conductor spacing guidelines per IPC-2221•Pb-free (RoHS compliant)•Bootstrap supply max voltage to 114VDC •On-chip 1W bootstrap diode•Fast propagation times for multi-MHz circuits•Drives 1nF load with typical rise/fall times of 9ns/7.5ns •CMOS compatible input thresholds (ISL2110)•3.3V/TTL compatible input thresholds (ISL2111)•Independent inputs provide flexibility •No start-up problems•Outputs unaffected by supply glitches, HS ringing below ground or HS slewing at high dv/dt •Low power consumption•Wide supply voltage range (8V to 14V)•Supply undervoltage protection•1.6W/1W typical output pull-up/pull-down resistanceFIGURE 1.APPLICATION BLOCK DIAGRAMSECONDARY CIRCUIT+100VC O N T R O LCONTROLLERPWMLIHIHO LOV DDHSHB+12V V SSREFERENCEAND ISOLATIONDRIVE LODRIVE HIISL2110ISL2111Functional Block DiagramFIGURE 2.FUNCTIONAL BLOCK DIAGRAMUNDER VOLTAGEV DDHILI V SSDRIVERDRIVERHBHOHSLOLEVEL SHIFTUNDER VOLTAGEEPAD (DFN Package Only)ISL2111ISL2111*EPAD = Exposed Pad. The EPAD is electrically isolated from all other pins. For best thermal performance, connect the EPAD to the PCB power ground plane.Application DiagramsSECONDARY ISOLATIONPWM+48V+12VCIRCUITFIGURE 3.TWO-SWITCH FORWARD CONVERTERISL2110ISL2111SECONDARY CIRCUITISOLATIONPWM+48V+12VFIGURE 4.FORWARD CONVERTER WITH AN ACTIVE-CLAMPISL2110ISL2111Ordering InformationPART NUMBER (Notes2, 3)PARTMARKINGPACKAGE DESCRIPTION(RoHS COMPLIANT)PKG.DWG. #CARRIER TYPE(Notes1)TEMP RANGEISL2110ABZ 2110ABZ 8 Ld SOIC M8.15Tube-40 to +125°CISL2110ABZ -T Reel, 2.5kISL2110AR4Z2110AR4Z 12 Ld 4x4 DFN L12.4x4A TubeISL2110AR4Z-T Reel, 6kISL2111ABZ2111ABZ 8 Ld SOIC M8.15TubeISL2111ABZ-T Reel, 2.5kISL2111AR4Z2111AR4Z 12 Ld 4x4 DFN L12.4x4A TubeISL2111AR4Z-T Reel, 6kISL2111ARTZ2111ARTZ 10 Ld 4x4 TDFN L10.4x4TubeISL2111ARTZ-T Reel, 6kISL2111BR4Z2111BR4Z 8 Ld 4x4 DFN L8.4x4TubeISL2111BR4Z-T Reel, 6kNOTES:1.See TB347 for details about reel specifications.2.These Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plateplus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.3.For Moisture Sensitivity Level (MSL), please see device information page for ISL2110, ISL2111. For more information on MSL, see TB363.Pin ConfigurationsISL2111ARTZ (10 LD 4x4 TDFN)TOP VIEW ISL2110AR4Z, ISL2111AR4Z(12 LD 4x4 DFN)TOP VIEW2 3 4 1 59 8 7 10 6VDD HB HO HS NC LOVSSLIHINCVDDNCNCHBHOLOVSSNCNCLIHS HI234151110912867EPAD**EPAD = EXPOSED PADISL2110ABZ, ISL2111ABZ(8 LD SOIC)TOP VIEWISL2111BR4Z (8 LD 4x4 DFN)TOP VIEWPin Configurations56874321VDD HB HO HSLO LI HIVSS 23417658VDD HB HO HSLO VSS LI HIEPAD**EPAD = EXPOSED PADPin DescriptionsSYMBOL DESCRIPTIONVDD Positive supply to lower gate driver. Bypass this pin to VSS.HB High-side bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin. Bootstrap diode is on-chip.HO High-side output. Connect to gate of high-side power MOSFET.HS High-side source connection. Connect to source of high-side power MOSFET. Connect negative side of bootstrap capacitor to this pin. HI High-side input LI Low-side inputVSS Chip negative supply, which will generally be ground.LO Low-side output. Connect to gate of low-side power MOSFET.NC No connectEPADExposed pad. Connect to ground or float. The EPAD is electrically isolated from all other pins.Absolute Maximum Ratings Thermal InformationSupply Voltage, V DD, V HB - V HS (Notes4, 5) . . . . . . . . . . . . . . . 0.3V to 18V LI and HI Voltages (Note5) . . . . . . . . . . . . . . . . . . . . . . .-0.3V to V DD + 0.3V Voltage on LO (Note5). . . . . . . . . . . . . . . . . . . . . . . . . . .-0.3V to V DD + 0.3V Voltage on HO relative to HS (Repetitive Transient < 100ns). . . . . . . . .-2V Voltage on LO relative to GND (Repetitive Transient < 100ns). . . . . . . .-2V Voltage on HO (Note5) . . . . . . . . . . . . . . . . . . . . . .V HS - 0.3V to V HB + 0.3V Voltage on HS (Continuous) (Note5). . . . . . . . . . . . . . . . . . . . . -1V to 110V Voltage on HB (Note5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .118V Average Current in V DD to HB Diode . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Maximum Recommended Operating ConditionsSupply Voltage, V DD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V to 14V Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V Voltage on HS . . . . . . . . . . . . . (Repetitive Transient < 100ns) -5V to 105V Voltage on HB . . . . . . . . . . .V HS+7V to V HS+14V and V DD - 1V to V DD+100V HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<50V/ns Thermal Resistance (Typical)θJA (°C/W)θJC (°C/W) 8 Ld SOIC (Notes6, 9) . . . . . . . . . . . . . . . . . 954610 Ld TDFN (Notes7, 8) . . . . . . . . . . . . . . . 40 2.512 Ld DFN (Notes7, 8) . . . . . . . . . . . . . . . . 39 2.58 Ld DFN (Notes7, 8). . . . . . . . . . . . . . . . . . 40 4.0 Max Power Dissipation at +25°C in Free Air8 Ld SOIC (Notes6, 9). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.3W 10 Ld TDFN (Notes7, 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3.0W 12 Ld DFN (Notes7, 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3.1W 8 Ld DFN (Notes7, 8). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3.1W Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-55°C to +150°C Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty.NOTES:4.The ISL2110 and ISL2111 are capable of derated operation at supply voltages exceeding 14V. Figure 24 shows the high-side voltage derating curvefor this mode of operation.5.All voltages referenced to V SS unless otherwise specified.6.θJA is measured with the component mounted on a high-effective thermal conductivity test board in free air. See Tech Brief TB379 for details.7.θJA is measured in free air with the component mounted on a high-effective thermal conductivity test board with “direct attach” features. See TechBrief TB379.8.For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.9.For θJC, the “case temp” location is taken at the package top center.Electrical Specifications V DD = V HB = 12V, V SS = V HS = 0V, no load on LO or HO, unless otherwise specified.PARAMETERS SYMBOL TEST CONDITIONST J = +25°C T J = -40°C to +125°CUNIT MIN(Note10)TYPMAX(Note10)MIN(Note10)MAX(Note10)SUPPLY CURRENTSV DD Quiescent Current I DD ISL2110; LI = HI = 0V- 0.100.25-0.30mA V DD Quiescent Current I DD ISL2111; LI = HI = 0V- 0.300.45-0.55mA V DD Operating Current I DDO ISL2110; f = 500kHz- 3.4 5.0- 5.5mA V DD Operating Current I DDO ISL2111; f = 500kHz- 3.5 5.0- 5.5mA Total HB Quiescent Current I HB LI = HI = 0V-0.100.15-0.20mA Total HB Operating Current I HBO f = 500kHz- 3.4 5.0- 5.5mA HB to V SS Current, Quiescent I HBS LI = HI = 0V; V HB = V HS = 114V-0.05 1.50-10µA HB to V SS Current, Operating I HBSO f = 500kHz; V HB = V HS = 114V- 1.2---mA INPUT PINSLow Level Input Voltage Threshold V IL ISL2110 3.7 4.4- 3.5-V Low Level Input Voltage Threshold V IL ISL2111 1.4 1.8- 1.2-V High Level Input Voltage Threshold V IH ISL2110- 6.67.4-7.6V High Level Input Voltage Threshold V IH ISL2111- 1.8 2.2- 2.4V Input Voltage Hysteresis V IHYS ISL2110- 2.2---VInput Pull-Down Resistance R I-210-100500k ΩUNDERVOLTAGE PROTECTION V DD Rising Threshold V DDR 6.1 6.67.1 5.87.4V V DD Threshold Hysteresis V DDH -0.6---V HB Rising Threshold V HBR 5.5 6.1 6.8 5.07.1V HB Threshold Hysteresis V HBH-0.6---VBOOTSTRAP DIODELow Current Forward Voltage V DL I VDD-HB = 100µA -0.50.6-0.7V High Current Forward Voltage V DH I VDD-HB = 100mA -0.70.9-1V Dynamic Resistance R DI VDD-HB = 100mA-0.71-1.5ΩLO GATE DRIVER Low Level Output Voltage V OLL I LO = 100mA-0.10.18-0.25V High Level Output Voltage V OHL I LO = -100mA, V OHL = V DD - V LO -0.160.23-0.3V Peak Pull-Up Current I OHL V LO = 0V -3---A Peak Pull-Down Current I OLLV LO = 12V-4---AHO GATE DRIVER Low Level Output Voltage V OLH I HO = 100mA-0.10.18-0.25V High Level Output Voltage V OHH I HO = -100mA, V OHH = V HB - V HO -0.160.23-0.3V Peak Pull-Up Current I OHH V HO = 0V -3---A Peak Pull-Down CurrentI OLHV HO = 12V-4---AElectrical SpecificationsV DD = V HB = 12V, V SS = V HS = 0V, no load on LO or HO, unless otherwise specified. (Continued)PARAMETERSSYMBOL TEST CONDITIONST J = +25°CT J = -40°C to +125°CUNIT MIN (Note 10)TYP MAX (Note 10)MIN (Note 10)MAX (Note 10)Switching SpecificationsV DD = V HB = 12V, V SS = V HS = 0V, No Load on LO or HO, unless otherwise specified.PARAMETERSSYMBOL TESTCONDITIONS T J = +25°CT J = -40°C to +125°C UNIT MIN (Note 10)TYP MAX (Note 10)MIN (Note 10)MAX (Note 10)Lower Turn-Off Propagation Delay (LI Falling to LO Falling)t LPHL -3250-60ns Upper Turn-Off Propagation Delay (HI Falling to HO Falling)t HPHL -3250-60ns Lower Turn-On Propagation Delay (LI Rising to LO Rising)t LPLH -3950-60ns Upper Turn-On Propagation Delay (HI Rising to HO Rising)t HPLH -3850-60ns Delay Matching: Upper Turn-Off to Lower Turn-On t MON 18--16ns Delay Matching: Lower Turn-Off to Upper Turn-On t MOFF 16--16ns Either Output Rise Time (10% to 90%)t RC C L = 1nF -9---ns Either Output Fall Time (90% to 10%)t FC C L = 1nF -7.5---ns Either Output Rise Time (3V to 9V)t R C L = 0.1µF -0.30.4-0.5µs Either Output Fall Time (9V to 3V)t F C L = 0.1µF-0.190.3-0.4µs Minimum Input Pulse Width that Changes the Output t PW ----50ns Bootstrap Diode Turn-On or Turn-Off Timet BS-10---nsNOTE:10.Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterizationand are not production tested.Timing DiagramsFIGURE 5.PROPAGATION DELAYSFIGURE 6.DELAY MATCHINGt HPLH ,t LPLHt HPHL ,t LPHLHI , LIHO , LOt MONt MOFFLIHILOHOTypical Performance CurvesFIGURE 7.ISL2110 I DD OPERATING CURRENT vs FREQUENCY FIGURE 8.ISL2111 I DD OPERATING CURRENT vs FREQUENCYFIGURE 9.I HB OPERATING CURRENT vs FREQUENCYFIGURE 10.I HBS OPERATING CURRENT vs FREQUENCYFIGURE 11.HIGH LEVEL OUTPUT VOLTAGE vs TEMPERATURE FIGURE 12.LOW LEVEL OUTPUT VOLTAGE vs TEMPERATURE0.11.010.0FREQUENCY (Hz)I D D O (m A )T = +25°CT = -40°CT = +125°CT = +150°C10k100k1.103k10k100k1.103k0.11.010.0FREQUENCY (Hz)I D D O (m A )T = +25°CT = -40°CT = +150°CT = +125°CFREQUENCY (Hz)I H B O (m A )0.011.010.0T = +25°CT = -40°CT = +125°CT = +150°C10k100k1.103k0.1FREQUENCY (Hz)I H B S O (m A )0.011.010.0T = -40°CT = +125°CT = +150°C10k100k1.103k0.1T = +25°C-505010015050100150200250300TEMPERATURE (°C)V O H L , V O H H (m V )V DD = V HB = 12VV DD = V HB = 14VV DD = V HB = 8V-505010015050100150200V O L L , V O L H (m V )TEMPERATURE (°C)V DD = V HB = 12VV DD = V HB = 14VV DD = V HB = 8VFIGURE 13.UNDERVOLTAGE LOCKOUT THRESHOLD vsTEMPERATUREFIGURE 14.UNDERVOLTAGE LOCKOUT HYSTERESIS vsTEMPERATUREFIGURE 15.ISL2110 PROPAGATION DELAYS vs TEMPERATURE FIGURE 16.ISL2111 PROPAGATION DELAYS vs TEMPERATUREFIGURE 17.ISL2110 DELAY MATCHING vs TEMPERATURE FIGURE 18.ISL2111 DELAY MATCHING vs TEMPERATURETypical Performance Curves (Continued)V D D R , V H B R (V )-50501001506.7TEMPERATURE (°C)V HBRV DDR6.56.36.15.95.75.55.3V D D H , V H B H (V )-50501001500.70TEMPERATURE (°C)V HBHV DDH0.650.600.550.500.450.4025303540455055t L P L H , t L P H L , t H P L H , t H P H L (n s )-5050100150TEMPERATURE (°C)t LPHLt HPHLt LPLHt HPLH25303540455055t L P L H , t L P H L , t H P L H , t H P H L (n s )-5050100150TEMPERATURE (°C)t LPHLt HPHLt LPLHt HPLH4.04.55.05.56.06.57.07.58.0t M O N , t M O F F (n s )-5050100150TEMPERATURE (°C)t MOFFt MON4.04.55.05.56.06.57.07.58.08.59.09.510.0t M O N , t M O F F (n s )-50050100150TEMPERATURE (°C)t MOFFt MONFIGURE 19.PEAK PULL-UP CURRENT vs OUTPUT VOLTAGE FIGURE 20.PEAK PULL-DOWN CURRENT vs OUTPUT VOLTAGEFIGURE 21.ISL2110 QUIESCENT CURRENT vs VOLTAGE FIGURE 22.ISL2111 QUIESCENT CURRENT vs VOLTAGEFIGURE 23.BOOTSTRAP DIODE I-V CHARACTERISTICSFIGURE 24.V HS VOLTAGE vs V DD VOLTAGETypical Performance Curves (Continued)48101200.51.01.52.02.53.03.5V LO , V HO (V)I O H L , I O H H (A )2648101201.52.02.53.03.54.04.5V LO , V HO (V)I O H L , I O H H (A )261.00.505101520102030405060708090100110120V DD , V HB (V)I D D , I H B (µA )I HBI DD05101520V DD , V HB (V)I D D , I H B (µA )20406080100120140160180200220240260280300320I HBI DD0.30.40.50.60.70.81.10-30.010.101.00FORWARD VOLTAGE (V)F O R W A R D C U R R E N T (A )1.10-41.10-51.10-61213141516020406080100120V H S T O V S S V O L T A G E (V )V DD TO V SS VOLTA GE (V)Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please visit our website to make sure you have the latest revision.DATE REVISION CHANGEApril 18, 2022FN6295.8Updated the Ordering information table to comply with the new standard, updated notes.In Absolute Maximum Ratings, added Voltage on HO relative to HS and Voltage on LO relative to GND.Updated POD M8.15 to the latest version: “Added the coplanarity spec into the drawing.”Removed Related Literature and About Intersil sections.Mar 16, 2017FN6295.7Corrected the branding of FG ISL2111BR4Z in the order information table from "211 1BR4A" to "2111BR4Z".Added Revision History table and About Intersil information.Updated L10.4x4 Package Outline Drawing from Rev 1 to Rev 2. Change since Rev 1 is:“Tiebar note update from ‘Tiebar shown (if present) is a non-functional feature’ to ‘Tiebar shown (ifpresent) is a non-functional feature and may be located on any of the 4 sides (or ends)’”.Updated L12.4x4A Package Outline Drawing from Rev 1 to Rev 3. Changes since Rev 1 are:“Tiebar note update from ‘Tiebar shown (if present) is a non-functional feature’ to ‘Tiebar shown (ifpresent) is a non-functional feature and may be located on any of the 4 sides (or ends)’”;“Bottom View changed from ‘3.2 REF’ TO ‘2.5 REF’";“Typical Recommended Land Pattern changed from ‘3.80’ to ‘3.75’";“Updated to new POD format by removing table listing dimensions and moving dimensions onto drawing”,and “Added typical recommended land pattern”.Updated M8.15 Package Outline Drawing from Rev 3 to Rev 4. Change since Rev 3 is:“Changed Note 1 from 1982 to 1994“.Updated L8.4x4 Package Outline Drawing from Rev 0 to Rev 1. Change since Rev 0 is:“Tiebar note update from ‘Tiebar shown (if present) is a non-functional feature’ to ‘Tiebar shown (ifpresent) is a non-functional feature and may be located on any of the 4 sides (or ends)’”.10 LEAD THIN DUAL FLAT NO-LEAD PLASTIC PACKAGE Rev 2, 4/15TYPICAL RECOMMENDED LAND PATTERNDETAIL "X"SIDE VIEWTOP VIEWBOTTOM VIEWlocated within the zone indicated. The pin #1 identifier may be Unless otherwise specified, tolerance : Decimal ± 0.05The configuration of the pin #1 identifier is optional, but must be between 0.15mm and 0.30mm from the terminal tip.Dimension b applies to the metallized terminal and is measured Dimensions in ( ) for Reference Only.Dimensioning and tolerancing conform to AMSE Y14.5m-1994.6.either a mold or mark feature.3.5.4.2.Dimensions are in millimeters.1.NOTES:4.00 2.600.15(3.80)(4X)(10X 0.30)(8X 0.8)0 .75BASE PLANE CSEATING PLANE0.08C0.10C10 X 0.30SEE DETAIL "X"0.104C A M B INDEX AREA6PIN 14.00ABPIN #1 INDEX AREABSC3.2REF8X 0.806(10 X 0.60)0 . 00 MIN.0 . 05 MAX.C0 . 2 REF10X 0 . 403.00(2.60)( 3.00 )0.05M C 65101Tiebar shown (if present) is a non-functional feature and may be located on any of the 4 sides (or ends).12 LEAD DUAL FLAT NO-LEAD PLASTIC PACKAGE Rev 3, 3/15TYPICAL RECOMMENDED LAND PATTERNDETAIL "X"SIDE VIEWTOP VIEWBOTTOM VIEWlocated within the zone indicated. The pin #1 identifier may be Unless otherwise specified, tolerance : Decimal ± 0.05The configuration of the pin #1 identifier is optional, but must be between 0.15mm and 0.30mm from the terminal tip.Lead width applies to the metallized terminal and is measured Dimensions in ( ) for Reference Only.Dimensioning and tolerancing conform to AMSE Y14.5m-1994.6.either a mold or mark feature.3.5.4.2.Dimensions are in millimeters.1.NOTES:4.00 1.580.15( 3.75)(4X)( 12X 0 . 25)( 10X 0 . 5 )1.00 MAXBASE PLANE CSEATING PLANE0.08C0.10C12 X 0.25SEE DETAIL "X"0.104C A M B INDEX AREA6PIN 14.00ABPIN #1 INDEX AREA2.5REF10X 0.50 BSC6( 12 X 0.65 )0 . 00 MIN.0 . 05 MAX.C0 . 2 REF12X 0 . 452.80( 1.58)( 2.80 )0.05M C 76121Tiebar shown (if present) is a non-functional feature and may be located on any of the 4 sides (or ends).8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE8 LEAD DUAL FLAT NO-LEAD PLASTIC PACKAGE Rev 1, 03/15TYPICAL RECOMMENDED LAND PATTERNDETAIL "X"SIDE VIEWTOP VIEWBOTTOM VIEWlocated within the zone indicated. The pin #1 identifier may be Unless otherwise specified, tolerance : Decimal ± 0.05The configuration of the pin #1 identifier is optional, but must be between 0.15mm and 0.30mm from the terminal tip.Dimension applies to the metallized terminal and is measured Dimensions in ( ) for Reference Only.Dimensioning and tolerancing conform to ASME Y14.5m-1994.6.either a mold or mark feature.3.5.4.2.Dimensions are in millimeters.1.NOTES:4.00 2.50 ± 0.100.15( 3.80)(4X)( 8X 0 . 30 )( 6X 0 . 8 )0 .9 ± 0.10BASE PLANE CSEATING PLANE0.08C0.10C8 X 0.30SEE DETAIL "X"0.104C A M B INDEX AREA6PIN 14.00ABPIN #1 INDEX AREABSC2.4REF6X 0.806( 8 X 0.60 )8X 0 . 40 ± 0.103.45 ± 0.10( 2.50)( 3.45 )0.05M C 54810 . 00 MIN.0 . 05 MAX.C0 . 2 REFTiebar shown (if present) is a non-functional feature and may be located on any of the 4 sides (or ends).Corporate HeadquartersTOYOSU FORESIA, 3-2-24 Toyosu,Koto-ku, Tokyo 135-0061, Japan Contact InformationFor further information on a product, technology, the most up-to-date version of a document, or your nearest sales office, please visit:/contact/TrademarksRenesas and the Renesas logo are trademarks of Renesas Electronics Corporation. All trademarks and registered trademarks are the property of their respective owners.IMPORTANT NOTICE AND DISCLAIMERRENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (“RENESAS”) PROVIDES TECHNICAL SPECIFICATIONS AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDINGREFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS OR IMPLIED, INCLUDING, WITHOUT LIMITATION, ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.These resources are intended for developers skilled in the art designing with Renesas products. You are solely responsible for (1) selecting the appropriate products for your application, (2) designing, validating, and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, or other requirements. These resources are subject to change without notice. Renesas grants you permission to use these resources only for development of an application that uses Renesas products. Other reproduction or use of these resources is strictly prohibited. No license is granted to any other Renesas intellectual property or to any third party intellectual property. Renesas disclaims responsibility for, and you will fully indemnify Renesas and its representatives against, any claims,damages, costs, losses, or liabilities arising out of your use of these resources. Renesas' products are provided only subject to Renesas' Terms and Conditions of Sale or other applicable terms agreed to in writing. No use of any Renesas resources expands or otherwise alters any applicable warranties or warranty disclaimers for these products.(Rev.1.0 Mar 2020)。
IRS2110SPBF;IRS2110PBF;IRS2113PBF;IRS2113STRPBF;IRS2110STRPBF;中文规格书,Datasheet资料
Features•Floating channel designed for bootstrap operation•Fully operational to +500 V or +600 V•Tolerant to negative transient voltage, dV/dt immune•Gate drive supply range from 10 V to 20 V•Undervoltage lockout for both channels•3.3 V logic compatible•Separate logic supply range from 3.3 V to 20 V•L ogic and power ground ±5V offset•CMOS Schmitt-triggered inputs with pull-down•Cycle by cycle edge-triggered shutdown logic•Matched propagation delay for both channels•Outputs in phase with inputs•RoHS compliantDescriptionHIGH AND LOW SIDE DRIVERProduct SummaryV OFFSET (IRS2110)500 V max.(IRS2113)600 V max.I O+/- 2 A/2 AV OUT10 V - 20 Vt on/off (typ.)130 ns & 120 nsDelay Matching (IRS2110) 10 ns max.(IRS2113) 20 ns max. 1The IRS2110/IRS2113 are high voltage, high speedpower MOSFET and IGBT drivers with independenthigh-side and low-side referenced output channels. Pro-prietary HVIC and latch immune CMOS technologiesenable ruggedized monolithic construction. L ogic in-puts are compatible with standard CMOS or LSTTL out-put, down to 3.3 V logic. The output drivers feature ahigh pulse current buffer stage designed for minimumdriver cross-conduction. Propagation delays arematched to simplify use in high frequency applications.The floating channel can be used to drive an N-channelpower MOSFET or IGBT in the high-side configurationwhich operates up to 500 V or 600 V.IRS2110(-1,-2,S)PbFIRS2113(-1,-2,S)PbFPackages14-L ead PDIPIRS2110 and IRS211314-L ead PDIP(w/o lead 4)IRS2110-1 and IRS2113-116-L ead PDIP(w/o leads 4 & 5)IRS2110-2 and IRS2113-216-L ead SOICIRS2110S andIRS2113SData Sheet No. PD60249 2IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFRecommended Operating ConditionsThe input/output logic timing diagram is shown in Fig. 1. For proper operation, the device should be used within the recommended conditions. The V S and V SS offset ratings are tested with all supplies biased at a 15 V differential.S S BS Note 3: When V DD < 5 V, the minimum V SS offset is limited to -V DD.Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured 3IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFDynamic Electrical CharacteristicsV BIAS (V CC , V BS , V DD ) = 15 V, C L = 1000 pF, T A = 25 °C and V SS = COM unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Fig. 3.Static Electrical CharacteristicsV BIAS (V CC , V BS , V DD ) = 15 V, T A = 25 °C and V SS = COM unless otherwise specified. The V IN , V TH, and I IN parameters are referenced to V SS and are applicable to all three logic input leads: HIN, LIN, and SD. The V O and I O parameters are referenced to COM and are applicable to the respective output leads: HO or LO.Functional Block Diagram4IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbF Lead Assignments14 Lead PDIPIRS2110/IRS211316 Lead SOIC (Wide Body) IRS2110S/IRS2113S14 Lead PDIP w/o lead 4 IRS2110-1/IRS2113-1 16 Lead PDIP w/o leads 4 & 5 IRS2110-2/IRS2113-25 6IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFFigure 1. Input/Output Timing DiagramFigure 2. Floating Supply Voltage Transient TestCircuitFigure 3. Switching Time Test Circuit Figure 4. Switching Time W aveform DefinitionFigure 6. Delay Matching W aveform DefinitionsFigure 5. Shutdown W aveform DefinitionsSFIRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbF 8IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFFigure 10A. Turn-On Rise Timevs. TemperatureFigure 10B. Turn-On Rise Time vs.Voltage101214161820Figure 11A. Turn-Off Fall Time vs. Temperature01020304050-50-25255075100125T u r n -O f f F a l l T i m e (n s )T u r n -O f f F a l l T i m e (n s )Temperature (o C )-50-25255075100125V BIAS Supply Voltage (V)Temperature (o C )IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFFigure 11B. Turn-Off Fall Time vs. Voltage 01020304050101214161820T u r n -O f f F a l l T i m e (n s )0.03.06.09.012.015.0-50-25255075100125L o g i c "1" I n p u t T h r e s h o l d (V )T u r n -O f f F a l l T i m e (n s )L o g i c “1” I n p u t T h r e s h o l d (V )V BIAS Supply Voltage (V)Temperature (o C ) 10IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFFigure 16A.Offset Supply Current vs. Temperature-50-25255075100125Figure 17A. V BS Supply Current vs. Temperature0100200300400500-50-25255075100125V B S S u p p l y C u r r e n t (µA )V B S S u p p l y C u r r e n t (µA )Temperature (o C)Temperature (o C)分销商库存信息:IRIRS2110SPBF IRS2110PBF IRS2113PBF IRS2113STRPBF IRS2110STRPBF IRS2113SPBF。
MCS-2110 CS-2110系列芯片控制器产品说明书
U O n/Off orProportional Control UC onvenient Receptacles for Input andOutput Connections U C ompact Benchtop Design U 15 A Maximum Output UJ , K Thermocouple or RTD Input U O n/Off Power SwitchThe MCS-2110 and CS-2110 seriesbenchtop controllers are ideal for laboratory use and applications requiring portable temperature control. Pre-wired input andoutput receptacles at the back of the case enable quick and easyconnections to power, thermocouple or RTD input and power output.Thermocouple models use universal female connector to accept either a miniature or standard male connector. RTD models use a 3-prong female connector to accept an OTP-U-M type connector. A 120 Vac, 15 A maximum output receptacle can be used to control heaters or other devices up to 1800 watts. TheMCS-2110 and CS-2110controllers operate in either on/off or proportional control modes, selectable by a simple front panel adjustment.Control ModesThe CN2110 provides precise, solid state proportion control with automatic reset (PI) that will control most heating applications. On/off control may be selected forapplications where maximum output life (load switching) is needed.All models operate on 120 Vac, 15 A and include a 1.5 m (5') power cord.MCS-2110 SeriesBenchtop Temperature ControllersMCS-2110J-R shownsmaller than actual size.Ordering Examples: MCS-2110J-R , benchtop controller, single 15 A relay output, Type J thermocouple input, -73 to 760°C (-100 to 1400°F) range.OCW-3, OMEGACARE SM extends standard 1-year warranty to a total of 4 years.SpecificationsControl Modes: On/off, PI-proportional with integralControl AdjustmentsProportional Band: sensor range Automatic Reset:0.0 to 99.9 repeats/minuteCycle Time: 0.1 to 60.0 seconds On/Off Deadband: 1° to 100°F or °C Setpoint Upper Limit: Sensor range °F or °C Setpoint Lower Limit: Sensor range °F or °C Output Limit: 0 to 100%Alarm Adjustments:Type: Absolute high or lowSetpoint: Sensor range °F or °CAlarm Dead Band: 0° to 100°F or °C Control/Alarm Outputs Relay: Form “A”, 120 Vacresistive loads at 30 seconds, cycle time; 15 A, 500,000 operations; 15 A, 1 million operations; 5 A, 5 million operationsSolid State Relay: Up to 10 A at 40°C Sensor Input: Switch selectable, J, K thermocouple or RTDInput Update Rate: 4 samples/s Readout Stability:J and K Thermocouple: ±1°F/10°F change in ambient temperature RTD: ±0.5 per 10°F change in ambient temperatureOpen Sensor and Out-of-Range Conditions: Displays “SENS”; control output 0%Instrument Power: 120 Vac <10 Va Operating Environment: 0° to 65°C (32°to 150°F)Enclosure Material: High-temperature ABS plastic rated for 0° to 175°F Front Panel: NEMA 4X construction Influence of Line Voltage Variation: ±0.1% of sensor span per 10% change in nominal line voltage Noise Rejection:Common Mode Noise: <2°F with 230 Vac, 60 Hz applied from sensor input to groundSeries Mode Noise: <2°F with 100 mV, peak-to-peak series mode noiseRFI: Typically <0.5% of sensor span at distance of 1 m (3.1’) from a transmitter of 4 W at 464 MHz Sensor Leadwire Effect:RTD: ±0.1% of sensor span per 20Ω balanced leadwire resistanceThe UPJ-K-F universal connector accepts eitherRear ViewMC OutputAC powerOMEGACARE SM extended warranty program isavailable for models shown on this page. Ask your sales representative for full details when placing an order. OMEGACARE SM covers parts, labor and equivalent loaners.。
RFX10TF6S;中文规格书,Datasheet资料
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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分销商库存信息:
ROHM RFX10TF6S
Tｊ=25 C IF=10A n=20pcs
Tｊ=25 C VR=600V n=20pcs
240
Ta=25 C f=1MHz VR=0V n=10pcs
2100
230
AVE : 140.3nA
2000
220 AVE : 224.6pF 210
10
1900
AVE : 1976mV
1800
1
200
PEAK SURGE FORWARD CURRENT : I FSM(A)
ELECTROSTATIC DISCHARGE TEST ESD(KV)
1
2
10 1 10 100
0 C=200pF R=0 C=100pF R=1.5k
0.1 0.001
0.01
0.1
1
10
100
1000
TIME : t(ms) IFSM-t CHARACTERISTICS
FORWARD CURRENT : I F(A)
10
10000 Tj=75 C 1000 Tj=25C 100 10 1
Tj=25
1
CAPACITANCE BETWEEN TERMINALS : Ct(pF)
600
Tj=150
REVERSE CURRENT : IR(nA)
100
Tj=75
1/3
2011.06 - Rev.A
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RFX10TF6S
Electrical characteristics curves
数字电源STNRG011规格书(中文版)
的增强型轻负载突发模式 • 一整套半桥保护 • 采用SO20封装
应用
• 开架式SMPS • 平板电视SMPS • ATX电源 • AC-DC 适配器
图1. 框图
BOOT HVG
FGND LVG
LLC_CS LLC_AUX
9.4.9 PFC状态机事件驱动(SMED) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
PFC算法 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
9.2.4 Vline浪涌停止 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
9.2.5 用于PFC控制的线路监控器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
9.4 PFC控制和故障管理 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
9.4.1 PFC资源 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
IR2110功能资料
IR2110功能资料驱动芯片IR2110功能简介在功率变换装置中，根据主电路的结构，起功率开关器件一般采用直接驱动和隔离驱动两种方式•美国IR 公司生产的IR2110驱动器，兼有光耦隔离和 磁隔离的优点，是中小功率变换装置中驱动器件的首选。
1. IR2110引脚功能L0 （引脚1）:低端输出COM （引脚2）:公共端Vcc （引脚3）:低端固定电源电压Nc （引脚4）:空端Vs （引脚5）:高端浮置电源偏移电压VB （引脚6）：高端浮置电源电压H0（引脚7）：高端输出Nc （引脚8）:空端VDD （引脚9）:逻辑电源电压HIN （引脚10）:逻辑高端输入SD （引脚11）:关断LIN （引脚12）:逻辑低端输入 —i..1 ■ ■ r ■ • V■魏•・ T•ht ・« 1 ■11(l)IR2110引脚管及特点简介Ivolcal ConnectionVss (引脚13):逻辑电路地电位端，其值可以为0V Nc (引脚14):空端(2)IR2110 的特点:(1) 具有独立的低端和高端输入通道。
(2)悬浮电源采用自举电路，其高端工作电压可达500Vo(3)输出的电源端(脚 3)的电压范围为10-20Vo ⑷逻辑电源的输入范W (脚9)5-15V,可方便的与TTL, CMOS 电平相匹配，而且逻辑电源地和功率电源地之间允许有V 的便移量。
(5)工作频率髙，可达SOOKHzo(6)开通、关断延迟小，分别为120ns 和94ns 。
(7)图腾柱输出峰值电流2A 。
2. IR2110内部结构IR2110的内部结构和工作原理框图如图4所示。
图中HIN 和LIN 为逆变桥中同一桥臂上下两个功率MOS 的驱动脉冲信号输入端。
SD 为保护信号输入端，当 该脚接高电平时，IR2110的输出信号全被封锁，其对应的输出端恒为低电平;而当 该脚接低电平时，IR2110的输出信号跟随HIN 和LIN 而变化，在实际电路里，该 端接用户的保护电路的输出。
2SK2645-01MR中文资料(fuji)中文数据手册「EasyDatasheet - 矽搜」
工作和存储 温度范围
绝对最大额定值
符号
V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg
额定值
600 ±9 ±32 ±35
9 71.9 50 +150 -55到+150
*1 L=1.63mH, Vcc=60V
单元
V A A V A mJ W °C
等效电路图
2SK2645-01MR
富士功率MOSFET
漏源导通状态电阻
RDS(on)=f(Tch):ID=4.5A,VGS=10V
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VGS(th)=f(Tch):ID=1mA,VDS=VGS
VSD [V]
0
0
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芯片中文手册,看全文,戳
2SK2645-01MR
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Zthch = F（T）参数：D = T / T
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0.1
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ID=4.5AV DS=25V VDS=25V VGS=0V f=1MHz VCC=300VI D=9A
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Tch=25°C Tch=125°C
北京四通光通信系统 射频冗余切换解决方案
射频冗余切换解决方案RFS2150 L波段感应切换开关RFS2150是2选1的L波段信号检测切换开关，当感应到当前的射频信号丢失或低于门限值时，它可以马上自动切换到备用信号源上。
它是理想的备份应用及做为常检修用的设备，可避免应急检修的情况。
功能与优点z按键式门限调节（-60至-20bBm）z工作范围：950-2150MHzz单组或两组（1U）选择z干接点式综合报警，各有特殊功能面板供订购RFS 0070 IF中频感应切换开关RFS 070是2选1的IF中频信号感应切换开关，当感应到当前射频信号丢失或低于门限时，它可以马上切换到备份信号源上。
功能与优点z门限设置通过面板电位器作调节z设计用于检测70MHz IF中频（可订购其他频率）z单/双/四组选择（1U标准）TXS/RXS 2150 8:1光链路冗余备份系统TXS/RXS 2150 8:1光链路冗余备份系统，可有效地路由备份的光链路，以替代8路中的任何1路出故障之链路。
功能与优点z TXS/RXS 2150系统提供的8:1光链路冗余备份系统-即仅1/8备份成本z可通过面板设定门限（-50至-20dBm）z可设定主路的优先次序，当同时有多路主路故障时，会自动备份最高优先设定的信道。
其它较低次序的故障信道会进入后补模式，并可在面板LCD上显示有关故障信道的状况z当设备进入后补模式，SNMP跟踪网管会报警z输入/输出口命名：7字符字母/数字输入/输出口命名，以易于辨认z可通过RJ45(以太网口)作遥控切换z双AC输入及内置自备份电源z可有特殊的功能面板供订购8：1光链路冗余备份解决方案。
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RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for W-CDMA base station applications with frequencies from 2110to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio and WLLapplications.•Typical 2-Carrier W-CDMA Performance: V DD = 28 Volts, I DQ = 1050 mA,P out = 23 Watts Avg., Full Frequency Band, Channel Bandwidth =3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.Power Gain — 14.5 dBDrain Efficiency — 25.5%IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz BandwidthACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Bandwidth•Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CWOutput PowerFeatures•Characterized with Series Equivalent Large-Signal Impedance Parameters•Internally Matched for Ease of Use•Qualified Up to a Maximum of 32 V DD Operation•Integrated ESD Protection•Designed for Lower Memory Effects and Wide Instantaneous BandwidthApplications•200°C Capable Plastic Package•N Suffix Indicates Lead-Free Terminations. RoHS Compliant.•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.Table 1. Maximum RatingsRating Symbol Value Unit Drain-Source Voltage V DSS-0.5, +68Vdc Gate-Source Voltage V GS-0.5, +12Vdc Total Device Dissipation @ T C = 25°CDerate above 25°CP D3071.75WW/°C Storage Temperature Range T stg-65 to +175°C Operating Junction Temperature T J200°C Table 2. Thermal CharacteristicsCharacteristic Symbol Value (1,2)Unit Thermal Resistance, Junction to CaseCase Temperature 80°C, 100 W CWCase Temperature 73°C, 23 W CWRθJC0.570.66°C/W1.MTTF calculator available at /rf. Select Tools/Software/Application Software/Calculators to accessthe MTTF calculators by product.2.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to /rf.Select Documentation/Application Notes - AN1955.Document Number: MRF6S21100NRev. 1, 5/2006 Freescale SemiconductorTechnical Data2RF Device DataFreescale SemiconductorMRF6S21100NR1 MRF6S21100NBR1Table 3. ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JESD22-A114)1B (Minimum)Machine Model (per EIA/JESD22-A115) A (Minimum)Charge Device Model (per JESD22-C101)IV (Minimum)Table 4. Moisture Sensitivity LevelTest MethodologyRating Package Peak TemperatureUnit Per JESD 22-A113, IPC/JEDEC J-STD-0203260°CTable 5. Electrical Characteristics (T C = 25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff CharacteristicsZero Gate Voltage Drain Leakage Current (V DS = 68 Vdc, V GS = 0 Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc)I DSS ——1μAdc Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc)I GSS——1μAdcOn CharacteristicsGate Threshold Voltage(V DS = 10 Vdc, I D = 330 μAdc)V GS(th)123Vdc Gate Quiescent Voltage(V DS = 28 Vdc, I D = 1050 mAdc)V GS(Q)2 2.84Vdc Drain-Source On-Voltage(V GS = 10 Vdc, I D = 3.3 Adc)V DS(on)—0.24—Vdc Forward Transconductance (V DS = 10 Vdc, I D = 2.2 Adc)g fs—5.3—SDynamic Characteristics (1)Reverse Transfer Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C rss—1.5—pFFunctional Tests (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 1050 mA, P out = 23 W Avg., f1 = 2112.5 MHz,f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset.. PAR = 8.5 dB @ 0.01%Probability on CCDF.Power Gain G ps 1314.516dB Drain EfficiencyηD 2425.536%Intermodulation Distortion)IM3-47-37-35dBc Adjacent Channel Power Ratio ACPR -50-40-38dBc Input Return LossIRL—-12-10dB1.Part is internally matched both on input and output.MRF6S21100NR1 MRF6S21100NBR13RF Device DataFreescale SemiconductorFigure 1. MRF6S21100NR1(NBR1) Test Circuit SchematicZ70.259″ x 0.880″ Microstrip Z80.215″ x 0.230″ Microstrip Z90.787″ x 0.084″ Microstrip Z11, Z12 1.171″ x 0.120″ Microstrip PCBArlon AD250, 0.030″, εr = 2.5Z1, Z100.743″ x 0.084″ Microstrip Z20.893″ x 0.084″ Microstrip Z30.175″ x 0.084″ Microstrip Z40.420″ x 0.800″ Microstrip Z5 1.231″ x 0.040″ Microstrip Z60.100″ x 0.880″ MicrostripVTable 6. MRF6S21100NR1(NBR1) Test Circuit Component Designations and ValuesPartDescriptionPart NumberManufacturer B1Ferrite Bead (0805)25008051107Y0Fair-Rite C110 μF, 35 V Tantalum Capacitor T491D106K035AS Kemet C20.01 μF Chip Capacitor (1825)C1825C103J1GAC Kemet C3, C4, C10 5.1 pF 600B Chip Capacitors 600B5R1BT250XT ATC C5, C6, C11, C1210 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C710 pF 600B Chip Capacitor 600B100BT250XT ATC C8 1.1 pF 600B Chip Capacitor600B1R1BT250XT ATC C9 5.1 pF 600 B Chip Capacitor (MRF6S21100NR1)8.2 pF 600 B Chip Capacitor (MRF6S21100NBR1)600B5R1BT250XT 600B8R2BT250XT ATC ATC R1 1 k Ω, 1/4 W Chip Resistor (1206) R210 k Ω, 1/4 W Chip Resistor (1206) R310 Ω, 1/4 W Chip Resistor (1206)4RF Device DataFreescale SemiconductorMRF6S21100NR1 MRF6S21100NBR1Figure 2. MRF6S21100NR1(NBR1) Test Circuit Component LayoutMRF6S21100NR1 MRF6S21100NBR15RF Device DataFreescale SemiconductorTYPICAL CHARACTERISTICSG p s , P O W E R G A I N (d B )100010160.1P out , OUTPUT POWER (WATTS) PEP Figure 5. Two-Tone Power Gain versusOutput Power 1514131211100101100P out , OUTPUT POWER (WATTS) PEPFigure 6. Third Order Intermodulation Distortionversus Output Power100.113006RF Device DataFreescale SemiconductorMRF6S21100NR1 MRF6S21100NBR1TYPICAL CHARACTERISTICSG p s , P O W E R G A I N (d B )300−6000.1TWO−TONE SPACING (MHz)Figure 7. Intermodulation Distortion Productsversus Tone SpacingI N T E R M O D U L A T I O N D I S T O R T I O N (d B c )I M D ,−20−30−40−5010146485832P in , INPUT POWER (dBm)Figure 8. Pulse CW Output Power versusInput PowerP o u t , O U T P U T P O W E R (d B m )5654525044424034363830011180.1P out , OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiencyversus CW Output Power161514131210100200P out , OUTPUT POWER (WATTS) CW Figure 11. Power Gain versus Output Power20406080100120140160−10100171180MRF6S21100NR1 MRF6S21100NBR17RF Device DataFreescale SemiconductorTYPICAL CHARACTERISTICS21010990T J , JUNCTION TEMPERATURE (°C)Figure 12. MTTF Factor versus Junction TemperatureThis above graph displays calculated MTTF in hours x ampere 2drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I D 2 for MTTF in a particular application.108107106120140160180200M T T F F A C T O R (H O U R S x A M P S 2)100190170150130110W-CDMA TEST SIGNAL100.00011000PEAK−TO−AVERAGE (dB)Figure 13. CCDF W-CDMA 3GPP , Test Model 1, 64 DPCH, 67% Clipping, Single-Carrier Test Signal1010.10.010.0012468P R O B A B I L I T Y (%)Figure 14. 2-Carrier W-CDMA Spectrumf, FREQUENCY (MHz)(d B )2051510−5−10−15−20−25258RF Device DataFreescale SemiconductorMRF6S21100NR1 MRF6S21100NBR1Figure 15. Series Equivalent Source and Load Impedancef MHz Z sourceΩZ load Ω2110214021703.56 - j3.923.34 - j3.903.55 - j3.97 1.62 - j3.471.53 - j3.191.44 - j2.89V DD = 28 Vdc, I DQ = 1050 mA, P out = 23 W Avg.f MHz Z sourceΩZ load Ω2110214021703.51 - j3.783.29 - j3.783.50 - j3.83 1.62 - j3.541.51 - j3.261.41 - j2.95V DD = 28 Vdc, I DQ = 1050 mA, P out = 23 W Avg.MRF6S21100NBR1MRF6S21100NR1Z o = 5 ΩZ sourceZ loadf = 2110 MHzZ source =Test circuit impedance as measured fromgate to gate, balanced configuration.Z load=Test circuit impedance as measuredfrom drain to drain, balanced configuration.ZsourceZloadOutput Matching Networkf = 2170 MHzf = 2110 MHzf = 2170 MHzf = 2110 MHzf = 2170 MHzZ o = 5 ΩZ loadZ sourcef = 2110 MHzf = 2170 MHzMRF6S21100NR1 MRF6S21100NBR19RF Device DataFreescale SemiconductorNOTES10RF Device Data Freescale SemiconductorMRF6S21100NR1 MRF6S21100NBR1NOTESMRF6S21100NR1 MRF6S21100NBR111RF Device DataFreescale SemiconductorNOTES12RF Device Data Freescale SemiconductorMRF6S21100NR1 MRF6S21100NBR1PACKAGE DIMENSIONSBOTTOM VIEW TO-270 WB-4PLASTICMRF6S21100NR1MRF6S21100NR1 MRF6S21100NBR113RF Device DataFreescale Semiconductor14RF Device Data Freescale SemiconductorMRF6S21100NR1 MRF6S21100NBR1MRF6S21100NR1 MRF6S21100NBR115RF Device DataFreescale SemiconductorInformation in this document is provided solely to enable system and softwareimplementers to use Freescale Semiconductor products. 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