2SK360IGFTL中文资料

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德国SICK传感器

德国SICK传感器
当其中任一束光线检测到物体时传感器都能提供稳 定输出, 特别是为带孔或槽的PCB板定位与检测,以及 输送带上扁平物体 即便是透明的托盘的检测提供了 最简单可靠的解决方案, 避免的点光源光电开关由于 光斑小而调入洞中的风险,突破了常规光电开关的局 限性, 是西克光电开关里程碑式的产品。
G6迷你型光电开关
30mm和60mm • 产品高度从100毫米到3.1米,能够满足几乎任何物流、
包装、交通运输及电子等行业的应用。广泛应用在物 流分拣、车辆分流和机械设备制造等各个领域。 • 全金属外壳,非常坚固,特别适合在工业领域的应用。 • 高达15,0000LUX的抗环境光干扰能力,工作稳定。 • 独特的支持交叉安装技术,让即使检测微小物体,也 变得十分简单。可选PNP/NPN/继电器开关输出,最高 频率可高达500KHz。阈值可通过集成的旋钮进行调节, 灵活的满足各种应用场合的灵敏度要求。无需线缆就 可实现光同步,集成外接测试信号输入端,现场调试 不再费时费力。
• • • • • • • • • • • • •
Inspector PI50 视觉传感器
3线;
电子式 T型槽磁性气缸开关
电子式 T型槽磁性气缸开关
• 使用SICK-ASIC芯片技术 (GMR),具有很高的精度;
• 开关点具有最小的偏差(+/-5%) • 滞后最小(0.7mT+/-0.1mT) • 非常坚固; • 操作简单; • 配置固紧螺丝; • "Drop-in"直接安装方式; • IP67/68/69K防护等级;
CM电容式接近开关
CM电容式接近开关
• 感应范围 8-25 mm; • 高的抗EMC(电磁干扰)
性能;
• 短路保护(脉冲); • 输出互补功能; • 防护等级IP67; • LED灯状态显示; • M18-M30 外形尺寸可选;

2SK3356资料

2SK3356资料

DATA SHEETDocument No.D14133EJ1V0DS00 (1st edition)The information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.The mark 5 shows major revised points.DESCRIPTIONThe 2SK3356 is N-channel MOS Field Effect Transistor designed for high current switching applications.FEATURES•Super low on-state resistance:R DS(on)1 = 8.0 m Ω MAX. (V GS = 10 V, I D = 38 A)R DS(on)2 = 12 m Ω MAX. (V GS = 4 V, I D = 38 A)•Low C iss : C iss = 6300 pF TYP.•Built-in gate protection diodeABSOLUTE MAXIMUM RATINGS (T A = 25°C)Drain to Source Voltage V DSS 60V Gate to Source Voltage V GSS(AC)±20V Drain Current (DC)I D(DC)±75A Drain Current (pulse) Note1I D(pulse)±300A Total Power Dissipation (T C = 25°C)P T 130W Total Power Dissipation (T A = 25°C)P T 3.0W Channel Temperature T ch 150°C Storage TemperatureT stg –55 to +150°C Single Avalanche Current Note2I AS 55A Single Avalanche Energy Note2E AS302mJNotes 1.PW ≤ 10 µs, Duty cycle ≤ 1 %2. Starting T ch = 25 °C, R G = 25 Ω, V GS = 20 V → 0 VTHERMAL RESISTANCEChannel to Case Rth(ch-C)0.93°C/W Channel to AmbientRth(ch-A)41.7°C/WORDERING INFORMATIONPART NUMBERPACKAGE 2SK3356TO-3P55555552ELECTRICAL CHARACTERISTICS (T A = 25 °C)CHARACTERISTICSSYMBOL TEST CONDITIONSMIN.TYP.MAX.UNIT Drain to Source On-state ResistanceR DS(on)1V GS = 10 V, I D = 38 A 6.38.0m ΩR DS(on)2V GS = 4 V, I D = 38 A 8.012m ΩGate to Source Cut-off Voltage V GS(off)V DS = 10 V, I D = 1 mA 1.5 2.0 2.5VForward Transfer Admittance | y fs|V DS = 10 V, I D = 38 A 3557SDrain Leakage CurrentI DSS V DS = 60 V, V GS = 0 V 10µA Gate to Source Leakage Current I GSS V GS = ±20 V, V DS = 0V±10µA Input Capacitance C iss V DS = 10 V, V GS = 0 V, f = 1 MHz6300pF Output CapacitanceC oss 1000pF Reverse Transfer Capacitance C rss 490pF Turn-on Delay Time t d(on)ID = 38 A, V GS(on) = 10 V, V DD = 30 V,90ns Rise Timet r R G = 10 Ω1100ns Turn-off Delay Time t d(off)300ns Fall Timet f 400ns Total Gate Charge Q G I D = 75 A , V DD = 48 V, V GS = 10 V 106nC Gate to Source Charge Q GS 20nC Gate to Drain Charge Q GD 30nC Body Diode Forward Voltage V F(S-D)I F = 75 A, V GS = 0 V 1.0V Reverse Recovery Time t rr I F = 75 A, V GS = 0 V,55ns Reverse Recovery ChargeQ rrdi/dt = 100 A/µs100nC5TEST CIRCUIT 3 GATE CHARGEV GS = 20 → 0 TEST CIRCUIT 1 AVALANCHE CAPABILITYL DDTEST CIRCUIT 2 SWITCHING TIMEL DDτ = 1 µsDuty Cycle ≤ 1 %3PACKAGE DRAWING (Unit: mm)Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.TO-3P (MP-88)EQUIVALENT CIRCUITBody DiodeDiodeDrain• The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.• No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual propertyrights of third parties by or arising from use of a device described herein or any other liability arising from useof such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or otherintellectual property rights of NEC Corporation or others.• Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits,software, and information in the design of the customer's equipment shall be done under the full responsibilityof the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons orproperty arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.• NEC devices are classified into the following three quality grades:"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on acustomer designated "quality assurance program" for a specific application. The recommended applications ofa device depend on its quality grade, as indicated below. Customers must check the quality grade of each devicebefore using it in a particular application.Standard: Computers, office equipment, communications equipment, test and measurement equipment,audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robotsSpecial: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems or medical equipment for life support, etc.The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.M7 98. 8。

2SK1404资料

2SK1404资料

Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
Normalized Transient Thermal Impedance γS (t)
Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 1.0 0.5 0.3 0.2 TC = 25°C
0.1
0.1
0.05
θch–c (t) = γS (t) · θch–c θch–c = 3.57°C/W, TC = 25°C PDM PW D = PW T
Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test 5 2 1 0.5 0.2 0.1 0.05 75°C –25°C TC = 25°C

2SK2553S中文资料

2SK2553S中文资料
2SK2553(L), 2SK2553(S)
Silicon N Channel MOS FET High Speed Power Switching
Application
High speed power switching
Features
• Low on-resistance • RDS(on) = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
recovery time
Note 1. Pulse Test

2sc3650 1.2a,30v npn塑料封装晶体管说明书

2sc3650 1.2a,30v npn塑料封装晶体管说明书

Parameter
Symbol
Rating
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Continuous Collector Current Collector Power Dissipation Thermal Resistance Junction to Ambient Junction, Storage Temperature
VCBO VCEO VEBO
IC PC RθJA TJ, TSTG
30 25 15 1.2 500 250 150, -55~150
Unit
V V V A mW °C / W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
/
02-Nov-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2
Elektronische Bauelemente CHARACTERISTIC CURVES
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
SOT-89
4
123 A
E
C
APPLICATION
LF Amplifiers, Various Drivers, Muting Circuit
MARKING
CF
PACKAGE INFORMATION

2SK740资料

2SK740资料

Dynamic Input Characteristics 200 Drain to Source Voltage VDS (V) 20 Gate to Source Voltage VGS (V) VDD = 100 V 50 V 120 25 V VDS VGS 12 500
Switching Characteristics VGS = 10 V VDD = 30 V PW = 2µs, duty < 1 %
20
1.0
Operation in this area is limited by RDS (on)
Ta = 25°C 0.1 0 50 100 Case Temperature TC (°C) 150 1
10 100 1,000 Drain to Source Voltage VDS (V)
Typical Output Characteristics 20 15V 10 V 8V 16 Drain Current ID (A) Pulse Test 6V Drain Current ID (A) 20
0.03 0.01 10 µ
uls
e
θch–c (t) = γS (t) · θch–c θch–c = 2.5°C/W, TC = 25°C PDM D = PW T PW T 1m 10 m Pulse Width PW (s) 100 m 1 10
100 µ
Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vin Vout 50 Ω Vin = 10 V . 30 V VDD = . td (on) 90 % tr 90 % td (off) tf 10 % 10 % 10 % Wavewforms 90 %

2SK3603-01MR中文资料

2SK3603-01MR中文资料

FUJI POWER MOSFET
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V
300 7.0 6.5 250 6.0 5.5 5.0
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 µ A
10
2
Avalanche Current I AV [A]
Single Pulse 10
1
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
10
1
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
max.
RDS(on) [ m Ω ]
200
VGS(th) [V]
4.5 4.0 3.5 3.0 2.5 min.
150 max. 100 typ. 50
2.0 1.5 1.0 0.5
0 -50 -25 0 25 50 75 100 125 150
0.0 -50 -25 0 25 50 75 100 125 150
Min.
150 3.0
Typ.
Max.
5.0 25 250 100 105 1140 195 9 18 4.2 33 9.3 31.5 13.5 9 1.65
Units
V V µA nA mΩ S pF
6
ns
nC

2SK3306资料

2SK3306资料

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.DATA SHEETDocument No.D14004EJ2V0DS00 (2nd edition)The mark 5 shows major revised points.DESCRIPTIONThe 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.FEATURES•Low gate charge :Q G = 13 nC TYP. (V DD = 400 V, V GS = 10 V, I D = 5.0 A)•Gate voltage rating : ±30 V •Low on-state resistance :R DS(on) = 1.5 Ω MAX. (V GS = 10 V, I D = 2.5 A)•Avalanche capability ratings •Isolated TO-220(MP-45F) packageABSOLUTE MAXIMUM RATINGS (T A = 25°C)Drain to Source Voltage (V GS = 0 V)V DSS 500V Gate to Source Voltage (V DS = 0 V)V GSS(AC)±30V Drain Current (DC)I D(DC)±5A Drain Current (pulse)Note1I D(pulse)±20A Total Power Dissipation (T C = 25°C)P T 35W Total Power Dissipation (T A = 25°C)P T 2.0W Channel Temperature T ch 150°C Storage Temperature T stg–55 to +150°C Single Avalanche Current Note2I AS 5.0A Single Avalanche EnergyNote2E AS125mJNotes 1.PW ≤ 10 µs, Duty Cycle ≤ 1 %2.Starting T ch = 25 °C, V DD = 150 V, R G = 25 Ω, V GS = 20 V → 0 VORDERING INFORMATIONPART NUMBERPACKAGE2SK3306Isolated TO-220 (MP-45F)(Isolated TO-220)52ELECTRICAL CHARACTERISTICS (T A = 25 °C)CHARACTERISTICSSYMBOL MIN.TYP.MAX.UNITTEST CONDITIONSDrain Leakage CurrentI DSS 100µA V DS = 500 V, V GS = 0V Gate to Source Leakage Current I GSS ±100nA V GS = ±30 V, V DS = 0V Gate to Source Cut-off VoltageV GS(off) 2.5 3.5V V DS = 10 V, I D = 1mA Forward Transfer Admittance | y fs | 1.03.0S V DS = 10 V, I D = 2.5 A Drain to Source On-state Resistance R DS(on) 1.35 1.5ΩV GS = 10 V, I D = 2.5AInput Capacitance C iss 700pF V DS = 10 V, V GS = 0 V, f = 1 MHzOutput CapacitanceC oss 115pF Reverse Transfer Capacitance C rss 6pF Turn-on Delay Time t d(on)16ns V DD = 150 V, I D = 2.5 A, V GS(on) = 10 V,Rise Timet r 3ns R G = 10 Ω, R L = 60 ΩTurn-off Delay Time t d(off)33ns Fall Timet f 5.5ns Total Gate Charge Q G 13nC V DD = 400 V, V GS(on) = 10 V, I D = 5.0 AGate to Source Charge Q GS 4nC Gate to Drain Charge Q GD 4.5nC Body Diode Forward Voltage V F(S-D) 1.0VI F = 5.0 A, V GS = 0 VReverse Recovery Timet rr 0.7µs I F = 5.0 A, V GS = 0 V, di/dt = 50 A /µsReverse Recovery ChargeQ rr3.3µCTEST CIRCUIT 1 AVALANCHE CAPABILITYV GS = 20 →DDTEST CIRCUIT 3 GATE CHARGETEST CIRCUIT 2 SWITCHING TIMEV LDDτ = 1 sµDuty Cycle ≤ 1 %L DD5555555553TYPICAL CHARACTERISTICS(T A = 25 °C)DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA406010012014016020406080100T c - Case Temperature - ˚Cd T - Pe r c e n t a g e of R a t e d P o w e r - %20TOTAL POWER DISSIPATION vs.CASE TEMPERATURE20406080100120140160T c - Case Temperature - ˚C P T - T o t a l P o w e r D i s s i p a t i o n - W0DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGE481216V DS - Drain to Source Voltage - VI D - D r a i n C u r r e n t - A10862FORWARD BIAS SAFE OPERATING AREA 100100.1I D - D r a i n C u r r e n t - A10V GS - Gate to Source Voltage - V10001000.0010.01I D - D r a i n C u r r e n t - A50403020100.1110510158044TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTHR D S (o n ) - D r a i n t o S o u r c e O n -S t a t e R e s i s t a n c e - Ω3.02.000.110I D - Drain Current - A 1–5050100150200T ch - Channel Temperature - ˚CI y f s I - F o r w a r d T r a n s f e r A d m i t t a n c e - S1.05DRAIN TO SOURCE ON-STATE RESISTANCE vs.CHANNEL TEMPERATURE 3.02.01.00.0R D S (o n ) - D r a i n t o S o u r c e O n -S t a t e R e s i s t a n c e - WSOURCE TO DRAIN DIODE FORWARD VOLTAGE00.110100t r r - R e v e r s e R e c o v e r y T i m e - n sI D - Drain Current - A 4281061214Q g - Gate Charge - nCV G S - G a t e t o S o u r c e V o l t a g e - V1200100012001400160018002000800600400C i s s , C o s s , C r s s - C a p a c i t a n c e - p F6SINGLE AVALANCHE CURRENT vs INDUCTIVE LOAD1.00E–041.00E–03 1.00E–02 1.00E–01SINGLE AVALANCHE ENERGY vsSTARTING CHANNEL TEMPERATURE1501001257525E A S - S i n g l e A v a l a n c h e E n e r g y - m J50255075100125150175L - Inductive Load - HStarting T ch - Starting Channel Temperature - ˚C7PACKAGE DRAWING (Unit: mm)Isolated TO-220(MP-45F)1. Gate2. Drain3. Source123Remark Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.EQUIVALENT CIRCUITBody Diode5• The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.• No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual propertyrights of third parties by or arising from use of a device described herein or any other liability arising from useof such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or otherintellectual property rights of NEC Corporation or others.• Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits,software, and information in the design of the customer's equipment shall be done under the full responsibilityof the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons orproperty arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.• NEC devices are classified into the following three quality grades:"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on acustomer designated "quality assurance program" for a specific application. The recommended applications ofa device depend on its quality grade, as indicated below. Customers must check the quality grade of each devicebefore using it in a particular application.Standard: Computers, office equipment, communications equipment, test and measurement equipment,audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robotsSpecial: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems or medical equipment for life support, etc.The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.M7 98. 8。

2SK2645中文资料(fuji)中文数据手册「EasyDatasheet - 矽搜」

2SK2645中文资料(fuji)中文数据手册「EasyDatasheet - 矽搜」
芯片中文手册,看全文,戳
FAP-IIS系列
特征
高速开关 低导通电阻 无二次击穿 低驱动电源 高压 V GS =±30V防护证 额定重复性雪崩
2SK2645-01MR
外形图
N沟道MOS-FET
600V
1,2
9A
50W
应用
开关稳压器
UPS DC-DC转换
通用功率放大器
最大额定值和特性
- 绝对最大额定值 (
10
[A] Eas [mJ] I
12
Starting T [°C]
V [V] 本规范如有变更,恕不另行通知!
t [s]
雪崩能​力 二极管正向导通电压 反向恢复时间 反向恢复电荷
V GS =0V V DS= V GS Tch=25°C Tch=125°C V DS=0V V GS =10V V DS=25V V DS=25V V GS =0V f=1MHz V CC=300V ID=9A V GS=10V RGS =10 L = 100µH Tch=25°C I F=2xI DR V GS=0V T ch=25°C IF=I DR V GS=0V -dI F/dt=100A/µs T ch=25°C
Unit V A A V A mJ W °C °C
- 电气特性(T
Item
漏源击穿电压 门门限电压 零栅压漏电流 门源漏电流 漏源极导通状态电阻 正向跨 输入电容 输出电容 反向传输电容 导通时间t on (t on =t d(on) +t r ) 关断时间t
off (ton=t d(off)+t f)
Typical Forward Transconductance vs. I
Gate Threshold Voltage vs. T

2SK3440资料

2SK3440资料

80
(A)
Drain-source voltage VDS
(V)
1
0.8
ID Drain current
60
0.6
40
0.4 ID = 50 A 0.2 25 12
20
100
Tc = −55°C 25
0 0
2
4
6
8
10
0 0
4
8
12
16
20
24
Gate-source voltage
VGS
(V)
Gate-source voltage
Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 350 µH, RG = 25 Ω, IAR = 50 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution.
Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin.
4
1
2 3
1
2002-03-04
2SK3440
Electrical Characteristics (Note 4) (Tc = 25°C)

igloohome 死锁 2S 金属灰说明书

igloohome 死锁 2S 金属灰说明书

1Welcome!This guide will get you up and running with your igloohome Deadb olt 2S Metal Grey. In the meantime, you should follow igloohome on Facebook and Y outube!Like us on FacebookVisit our Y outubeTable of ContentsIncluded 4What’s5SpecificationsInstallation Guide6Requirements7forInstallationPrepareDoor9forInstallationLockPrepareInstructions 10 InstallationLock 16 TestDoorFrame 17thePrepareUser Guide18 LockAnatomyFeatures 19Locking 21 Unlockingandb oarding 22OnAppApp 23inManagingAccessBehaviour 24 LockJumpstart26 9Vb nb Connect 27AirAudio and LED Indications 28b leshooting 29Trou4What’s IncludedFront Assembly & Rubber GasketBack Assembly Rubber GasketBack AssemblyAA Alkaline Batteries x4Bolt AssemblyKeys x5Screw HolderBack PlateStrike Plate Housing &Strike PlateDrill Sheet43mm (1.69”)Bolt Screw x35mm (0.019”)Bolt Screw x215mm (0.59”)Wood Screw x48mm (0.03”)Bolt Screw x220mm (0.78”)Bolt ScrewDoor Sensor & MagnetD r i l l S h e e t005SpecificationsModel igloohome Smart Deadbolt 2S Metal Grey Battery Type 4 x AA* Alkaline Battery Life Up to 1 Y ear Emergency Power 9V Alkaline Battery Operation Temp -20°C to 50°C Storage Temp -30°C to 60°C IP Rating IP65Material AI, Zinc Alloy, ABS Weight Net: 450g, Gross: 550g Unlock Mechanism Bluetooth, PIN code, Physical Keys, ThumbturnFront BackSide 145m m (5.70”)60mm (2.36”)11mm (0.43”)30mm (1.18”)65mm (2.55”)160m m (6.29”)* DO NOT USE: Heavy Duty, Eveready, GP, or rechargeable batteries. Please note that using recommendedbattery brands such as Panasonic, Duracell, or Energizer will improve the performance and lifespan of the lock.6Installation GuideRequirementsMeasurements 35mm (1.37”) to 60mm (2.36”) 10mm (0.39”) 20mm (0.78”)>110mm (4.33”) for 60mm (2.36”) / >120mm (4.72”) for 70mm (2.75”) backset50mm (1.96”)a b c d ebbbedClearanceDoor ThicknessPrepare Door for InstallationHow to use the Drill SheetDrilling (Door)Mark the center of the holes and then drill for accuracy. 8Remove Battery Cover from the Back AssemblyPress the button on thetop of the battery cover,and pull outwards.Set the toggle to ‘RH’ forright-hand installationRight Hand InstallationSet the toggle to ‘LH’ forleft-hand installation* Hinge is on your left.* Hinge is on your right.Left Hand InstallationTop View of Battery Cover910Installation InstructionsMeasureIf you are replacing your current deadbolt lock, industry standards are 60mm (2.36”) or 70mm (2.75”) backset. To determine which backset length you should use, so measure the distance (x) between the center of 54mm (2.12”) hole to door edge.Prepare bolt assembly based on the distance (x)Bolt ships with bolt assembly in 60mm (2.36”) position. If required, twist the bolt and pull to extend (simultaneously) to 70mm (2.75”) backset position.Insert bolt and front assembly into door edgeThe ‘+ ‘ hole on the backset should be in the middle of the hole.Screw HolderScrews15mm (0.59”)Measure and cut the tailpiece if necessaryAfter inserting the tailpiece, measure the distance of protrusion from the door.Please ensure that tailpiece is in vertical position.NotchThe recommended tailpiece protrusion from the door is 15mm (0.6”).Screws43mm (1.69”)Door Sensor InstallationAdjust the position of the door sensor according to the door handling (left or right hand installation).Use the 2 x 5mm (0.19”) screws to secure the door sensor to the back plate.Screws5mm (0.19”)Right-hand InstallationLeft-hand InstallationdeFollow this orientation5Right-hand Installation Left-hand InstallationFit in the Rubber GasketInsert the front assembly cable through the rectangular hole on the rubber gasket.The hole should be on the right side of the rubber gasket.Door Sensor Cable goes through the arched hole on the Rubber Gasket6Fit Back Assembly to the Door TailpieceEnsure thumbturn position is turned to ‘unlock’ position.78Right-hand InstallationLeft-hand InstallationInsert 4 AA Alkaline Batteries and push the battery case lidinwards to closeSecure the Back AssemblyScrews8mm (0.31”)20mm (0.78”)9Side View10Still experiencing issues?Test LockPlace hand over your lock to activate touchpad and hold ‘Unlock’ icon to lock.Does your bolt lock?Congrats!Y our lock is correctly installed.Proceed to next steps.Bummer!Does the bolt lock and unlockwhen you turn the thumbturn?Left-Right toggle incorrectly setRHLHTailpiece and/or thumbturnincorrectly setTroubleshoot: Try Setting the left-right toggle on your back assembly to the correct side.(See Pg. 10)Troubleshoot: Dissemble lock and install it again.Go to igloohome.co/support for more helpPrepare the Door FrameEnsure to align the lock to the door frame and mark it down.Mark out where the bolt tongue locks then drill a corresponding hole on door frame. Chisel to fit the strike plate in as well.Secure strike plate housing and strike plate using 2x 25mm (0.98”) wood screws.Paste the magnet opposite the doorsensor.58mm (2.28”)4Door SensorMagnet Door SensorFront & Back AssemblyTouch Screen KeypadUnlockUser GuideLock AnatomyAuto Re-lockEmergency Jump-StartThe Deadbolt 2S relocksautomatically when door is closed. User can configure the delay ordeactivate relock if they prefer to. Do note that function will only work when Sensor is installed.If battery power is drained, an external 9 Volt battery can be used to provide emergency power. The 2 contact points of the battery must be aligned with the 2 contact points on the Deadbolt 2S for 2 seconds.Manual LockingHold the ‘Unlock’ button for 1 second to manually lock the Deadbolt 2S.LockBatteryBluetooth Master KeyThe igloohome Deadb olt 2S unlocks with Bluetooth via the app.Master PIN CodeThe igloohome Deadb olt 2S unlocks with a permanent Master PIN Code.User PIN CodeThe igloohome mo b ile app can generate multiple types of User Pin codes, e.g. One-Time, Permanent & Duration.PIN / Bluetooth UnlockBluetooth Guest KeyThe igloohome mo b ile app can generate and share Bluetooth keys (b ased on duration with guests to unlock the Deadbolt 2S.Activity LogsEntry via PIN codes and Bluetooth Key will be logged in the app.Bluetooth key access logs areupdated in real-time and PIN code access logs are updated when the owner uses a bluetooth key or update logs.Keypad Security LockoutBe assured with an additional layer of security with the keypad lockout if the keypad is b eing tampered. User can configure numb er of incorrect attempts to trigger lockout.Keypad Disabled ModeMasking Security CodeDisab le the keypad to prevent PIN code entry from outside via the Multi Function Button.Enter up to 8 digits b efore your PIN Code to reduce risk of intruders checking fingerprints.Security / AlarmsTamper AlarmPassage ModeThe lock will sound if intruders try to pry the lock from the door.Activate Passage mode via the Multi Function Button or turning auto relock off via Bluetooth. Refer to Page 25.Unlocking & LockingBluetooth Basic UnlockBluetooth Guest Keyigloohome App igloohome AppPIN CodeThumbturnApp OnboardingIn the factory mode (before pairing), the PIN to unlock is 1234567890Test Factory PIN Unlocka) Download igloohome from App store / Play store.b) Create an account and login.Register as a Lock User2Pairing34Setting Master PIN codea) Select [Add new igloohome lock]Note: For existing users with other paired locks, go to [Configuration], select [Add Locks] and follow the instructions.Before proceeding, turn on your Bluetooth and ensure that you are within Bluetooth range of the lock.Go to [Access] and customize your [Master PIN] by editing it.Managing Access in AppPIN codes can be generated on the app under [Access], create [+Access] and choose either One-Time, Permanent or Duration PIN.Pin codes will expire if its not use within its activation period. Refer to the table below.Creating PIN codesPIN Type Use PIN within*One-Time PIN 24 hrs of generation Permanent PIN 24hrs of generation Duration PIN24hrs from the start time2Bluetooth Guest KeyBluetooth Guest Key can be shared with other users for mobile access. It allows your guests to unlock the igloohome smart lock via Bluetooth. There are 3 steps to using a Shared Bluetooth Key1. Under [Access], create [+Access] and choose [Bluetooth Key] under [Access Type]. Proceed to share the key after it is created.2. Guest receives the Bluetooth Key by one of these methods: • Clicking the URL given and follow the instructions. • Claiming Bluetooth Key under [Configuration].3. Guest can now use the Bluetooth Key under the Guest Bluetooth Key Section whenever he/she is within range of the lock.Notes: • The owner can revoke the Bluetooth Key in App.•Bluetooth Key must be accepted within 1 hour of generation before it expires.Note: Duration PIN code end times can be customised within a 28-day timeframe. Past this timeframe, the end time will automatically be configured to the start time.Lock BehaviourKeypad Security LockoutAfter several incorrect PIN code attempts, the igloohome Smart Deadbolt 2S keypad will be locked out and the security alarm will be triggered.Note: Physical key and Bluetooth Unlock can be used to unlock in this mode.Keypad Disabled ModePassage ModeKeypad Disabled Mode prevents others from using PIN code to unlock when you are inside the property.Note: Physical key, Bluetooth key & Thumbturn can be used to unlock in this mode and the Keypad will be enabled after successfully unlocked.Passage Mode enables you to have easy access during high human traffic flow by deactivating auto relock.Method 1: Turn off auto relock under lock settings via Bluetooth Method 2: Holding on to the Multi-Function Button239V Jumpstart9V Jumpstart Feature1. Touch and hold the battery contacts against the 9V jumpstart pin on the lock and you will hear a series of beeps and the keypad will light up.2. While holding the 9V battery to the jumpstart, key in your PIN code on the keypad followed by the ‘Unlock’ iconlock for 2 seconds to activate your Deadbolt 2S.Airbnb ConnectAirbnb Connect87Airbnb Connect automates the generation of PIN codes for your Airbnb guests based ontheir approved reservations. It costs USD$4.99 per month, but is currently on free trial.Here are the steps to activate Airbnb ConnectStep 1: Connect to your AirbnbUnder [Account Settings], select [Connect with Airbnb]Step 2: Connect to Airbnb listingsUnder [Reservations], click the [Add] icon to select a home to connect to.Select Airbnb Listing and PIN Time to associate.Note:• Emails with PIN code will be sent to the guest between 1 to 48 hours beforecheck-in time (configurable).• PINs will only be valid between the check-in and check-out times.Step 3: Change Check-in and Check-out timeUnder [Configuration], select [Manage Homes] followed by the listing to view or edit itsdetails.Notes:• If the access mail has not been sent, changing your check-in/check-out time via the appmodifies the start and end time of the PIN codes to be shared with your guest.• If the access mail has been sent, changing these details will only affect the nextreservation.• Changing these details on the igloohome app does not update the check-in/check-outtime on the listing on the Airbnb website.2Disconnect AirbnbShould you prefer to generate PIN codes for your guests manually, you may disconnect yourAirbnb listing from the igloohome home listing with the steps below.1. Under [Reservations], disconnect all the listings (if any).2. Under [Account Settings], select [Disconnect with Airbnb].Should you wish to completely disconnect your Airbnb account from your igloohome account, make sure that all your Airbnb listings have been disconnected in the above step, then go to:Airbnb Host Website > Connected Apps > Select igloohome to disconnectAudio and LED indicationsTroubleshootThe lock is not responding at all.• The lock’s battery is flat.• Use an Alkaline 9V Battery to jumpstart the lock and unlock the lock to replace the batteries once you are able to access the battery compartment.• If the keypad flashes once, the Keypad Security Lockout is triggered.• If the keypad flashes twice, the Keypad Disabled Mode is activated.• Refer to page 24 and 25 for details.The deadbolt keypad flashes when I activate the keypad.• Please ensure terminals of the 9V Battery are in contact with the jump-start contact points of the lock for 2 seconds to activate the lock.• The 9V Battery terminals must be in constant contact with the lock 9V contact pins while unlocking it with PIN code or Bluetooth.• Check the LH/RH toggle and ensure that it is at the correct side.• Refer to page 9 for details.I tried to use a 9V Battery to jump start the lock but was unable to.The deadbolt is locking when it is supposed to unlock or unlock when it is supposed to lock.• Do a Bluetooth Unlock or sync and try again.• Make sure that the generated PIN codes are activated within the activation period before it expires.I have generated my PINs from the app but it doesn’t work.• Check if the Relock Sensor is installed correctly.• Check if Auto Relock is switched on in the mobile app.• Check if Keypad Disabled Mode or Passage Mode is deactivated.• The battery is low in battery.• Unlock the lock to replace the batteries once you are able to access the battery compartment.• Use the spare QR sticker that is provided in the Deadbolt 2S box.• The tamper alarm is triggered.• Please ensure that cable between the front and back body are well connected.Auto Relock is not working.My lock gives a 3 descending tones every time I activate the keypad.I can’t scan the QR sticker as it’s worned out.The lock is beeping loudly continuously and none of the functions work.。

2SK3652中文资料

2SK3652中文资料

Forward transfer admittance
Pl
17
Short-circuit forward transfer capacitance (Common-source) Short-circuit output capacitance (Common-source) Reverse transfer capacitance (Common-source) Turn-on delay time Rise time Turn-off delay time Fall time
Drain current ID (A)
10
DC
t= 1 ms
1
t= 10 ms t= 100 ms
10−1
1
10
100
1 000
Drain-source voltage VDS (V)
e
vi
si
tf o ht llow tp in :// g pa U na RL so a ni bo c. u ne t l t/s ate c/ st en in f
Conditions
Min 230 2
or m
D S
Typ 29 35 5 950 850 80 65 140 470 145
(2.0)
Peak drain current
IDPΒιβλιοθήκη AID = 1 mA, VGS = 0
si
VDS = 25 V, ID = 10 mA VDS = 184 V, VGS = 0 VGS = ±30 V, VDS = 0
(4.0) 2.0±0.2 1.1±0.1

0.7±0.1
Rating 230 ±30 50 200

760109553 360G2单模光纤封装器6 SC 带绳子说明书

760109553 360G2单模光纤封装器6 SC 带绳子说明书
760109553 | 360G2 Cartridge 6-SC-SM-BLPIGTAILS A
360G2 Singlemode Fiber Cassette 6 SC with pigtails A
Product Classification
Regional Availability Portfolio Product Type Product Series
General Specifications
Color, front Intelligence Type Interface, front Interface, rear Total Ports, quantity, front
Dimensions
Height Width Depth
Optical Specifications
Qualification Standards
IEC 61753-1 | TIA-568.3-D
©2023 CommScope, Inc. All rights reserved. CommScope and the CommScope logo are registered trademarks of CommScope and/or its affiliates in the U.S. and other countries. For additional trademark information see https:///trademarks. All product names, trademarks and registered trademarks are property of their respective owners. Revised: April 25, 2023

凯尔贝等离子切割机HF360i 中文资料

凯尔贝等离子切割机HF360i 中文资料

-- Plasma cutting as cost-efficient and flexible as never before ---- 低成本、高效率及大柔性,等离子切割之前从未有过 --In case of frequently changing cutting tasks, i.e. when cutting different materials or a wide range of material thicknesses, the plasma cutting systems HiFocus 360i is the ideal solution, for dry plasma cutting as well as for underwater plasma cutting.HiFocus Plasma stands for highest standards. The excellent quality of the cut surface and very low perpendicularity and inclination tolerances together with high precision are the guarantee that nearly no after-treatment is required.切割作业中,您可能需要经常更换切割任务,例如,不同的切割材料,从薄到厚的切割厚度,干式切割或者水下切割,那么,HF360i是理想的解决方案。

HF系列等离子属于目前世界上最高标准的等离子切割系统,切面光洁度、垂直度及精度方面均得到了最佳保证。

切面几乎无需二次加工。

类激光等离子HF360i,切面垂直度在-1º ~ +2º之间HF360i可谓多才多艺,配合数控切割机,切割机器人,可以切割任何金属材料,等离子气体选用:空气、O2或Ar/H2;切割厚度:HF360i 0.5 – 80 mm,类激光增强型技术;推荐的切割厚度:0.5 – 60 mm;穿孔厚度:50 mm;*** HF360i 可以轻松实现水下切割,但切割厚度小于上述干式切割的数据。

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Output Capacitance Coss (pF)
VGS = 0 f = 1 MHz 10 5
0.2 0.1 0.05
2 1.0 0.5 0.5
0.02 0.01 0.5
1.0 2 5 10 20 Drain to Source Voltage VDS (V)
1.0 2 5 10 Drain to Source Voltage VDS (V)
F IGF 8 to 12
Rev.2.00, Aug 10.2005, page 2 of 5
元器件交易网
2SK360
Typical Output Characteristics 10
VGS = 0 V
Drain Current ID (mA)
Maximum Channel Dissipation Curve
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
Rev.2.00, Aug 10.2005, page 5 of 5
元器件交易网
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
8.0 F 6.0 E 4.0
16Leabharlann 128 VGS = 0 f = 1 kHz
2.0
4
0 –2.0
–1.6 –1.2 –0.8 –0.4 Gate to Source Voltage VGS (V)
0
0
2 4 6 8 Drain to Source Voltage VDS (V)
10
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