寄生参数提取 starrc流程

寄生参数提取 starrc流程
英文回答：
## Parasitic Parameter Extraction (StarRC Flow)。

Introduction.
Parasitic parameters are key factors influencing the accuracy and efficiency of modern integrated circuit (IC) designs. These parameters account for the unwanted
electrical effects caused by the physical layout of transistors and interconnects, and their accurate
extraction is crucial for predicting circuit performance and reliability.
StarRC is a widely used commercial tool for parasitic parameter extraction. It employs a full-wave electromagnetic field solver to compute the resistance, capacitance, and inductance of various structures within an IC layout. This approach provides highly accurate results
but can be computationally intensive for large and complex designs.
StarRC Extraction Flow.
The StarRC parasitic parameter extraction flow
typically involves the following steps:
1. Layout Preparation: The IC layout is prepared by flattening the layers and removing unnecessary details.
2. Mesh Generation: A mesh is generated over the layout to define the geometry for electromagnetic field simulations.
3. Electromagnetic Field Simulation: The full-wave solver in StarRC is employed to compute the electromagnetic fields and extract the parasitic parameters.
4. Post-Processing: The extracted parasitic parameters are post-processed to remove unwanted effects and improve the accuracy of the extraction.
Applications of Parasitic Parameter Extraction.
The parasitic parameters extracted using StarRC can be utilized in various applications, including:
Circuit simulation: Parasitic parameters can be incorporated into circuit simulators to predict circuit behavior under different operating conditions.
Timing analysis: Parasitic parameters impact circuit delays and timing characteristics, and their accurate extraction is essential for accurate timing analysis.
Electrostatic discharge (ESD) analysis: Parasitic parameters influence the ESD susceptibility of ICs, and their extraction is crucial for ESD protection design.
Power integrity analysis: Parasitic parameters affect power distribution networks and can lead to power supply noise and voltage drop issues, which can be mitigated by considering these parameters in power integrity analysis.
Benefits of Using StarRC.
StarRC offers several advantages for parasitic parameter extraction:
Accuracy: StarRC employs a full-wave electromagnetic field solver, which provides highly accurate results.
Scalability: StarRC can handle large and complex designs with millions of transistors and billions of interconnects.
Efficiency: StarRC utilizes advanced algorithms and parallelization techniques to optimize the extraction process.
User-Friendliness: StarRC provides a user-friendly interface and comprehensive documentation to facilitate its usage.
Conclusion.
Parasitic parameter extraction is critical for modern IC design. StarRC offers a robust and accurate solution for extracting these parameters, enabling designers to better predict circuit performance, improve reliability, and mitigate design risks.
中文回答：
## 寄生参数提取（StarRC 流程）。

简介。

寄生参数是影响现代集成电路（IC）设计精度和效率的关键因素。

这些参数是由晶体管和互连的物理布局引起的意外电学效应造成的，其准确提取对于预测电路性能和可靠性至关重要。

StarRC 是用于寄生参数提取的广泛应用的商业工具。

它采用全波电磁场求解器来计算 IC 布局中各种结构的电阻、电容和电感。

这种方法提供了高度准确的结果，但对于大型复杂的设计来说可能计算量很大。

StarRC 提取流程。

StarRC 寄生参数提取流程通常涉及以下步骤：
1. 布局准备，通过压平图层并移除不必要的细节来准备 IC 布局。

2. 网格生成，在布局上生成网格来定义电磁场仿真的几何形状。

3. 电磁场仿真，使用 StarRC 中的全波求解器来计算电磁场并
提取寄生参数。

4. 后处理，对提取的寄生参数进行后处理，以去除不需要的效
果并提高提取的准确性。

寄生参数提取的应用。

使用 StarRC 提取的寄生参数可用于各种应用，包括：
电路仿真，寄生参数可以纳入电路仿真器，以预测不同操作条
件下的电路行为。

时序分析，寄生参数会影响电路延迟和时序特性，其准确提取对于准确时序分析至关重要。

静电放电（ESD）分析，寄生参数会影响 IC 的 ESD 敏感性，其提取对于 ESD 保护设计至关重要。

电源完整性分析，寄生参数会影响配电网络，并可能导致电源噪声和电压跌落问题，可通过在电源完整性分析中考虑这些参数来缓解这些问题。

使用 StarRC 的优势。

StarRC 为寄生参数提取提供了诸多优势：
精度，StarRC 采用全波电磁场求解器，可提供高度准确的结果。

可扩展性，StarRC 可以处理具有数百万晶体管和数十亿互连的大型复杂设计。

效率，StarRC 利用高级算法和并行化技术来优化提取过程。

用户友好性，StarRC 提供用户友好的界面和全面的文档，以方便其使用。

结论。

寄生参数提取对于现代 IC 设计至关重要。

StarRC 针对这些参数的提取提供了一个强大且准确的解决方案，使设计人员能够更好地预测电路性能、提高可靠性并降低设计风险。