2SB1288资料

at io n.
Max −100 −100 625 −1 85
Unit V V nA nA V MHz pF
Publication date: February 2004
SJC00075BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
13.5±0.5
• Low collector-emitter saturation voltage VCE(sat) • Large collector current IC • Allowing supply with the radial taping
0.7±0.2
0.7±0.1
8.0±0.2
−25°C 120 80 40 0 − 0.01 − 0.1 −1 −10 0 1
400
25°C
Transition frequency fT (MHz)
160
or m
500
200
at io n.
10
VCE(sat) IC
hFE IC
fT I E
VCB = −6 V Ta = 25°C
100
−1
−10
−100
Collector-base voltage VCB (V)
Collector-emitter voltage VCE (V)
2
SJC00075BED
Request for your special attention and precautions in using the technical information and semiconductors described in this book
2.3±0.2
(1.27)
(1.27)
IC = −1 mA, IB = 0
Emitter-base voltage (Collector open)
IE = −10 µA, IC = 0 VEB = −5 V, IC = 0
Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio
Tstg
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol VCEO VEBO ICBO IEBO hFE fT Collector-emitter voltage (Base open)
tf o ht llow tp in :// g pa U na RL so a ni bo c. u ne t l t/s ate c/ st en in f
5.0±0.2 4.0±0.2
Unit: mm
M Di ain sc te on na tin nc ue e/ d
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol VCBO VCEO VEBO IC ICP PC Tj Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1288
Silicon PNP epitaxial planar type
For low-frequency power amplification For DC-DC converter For stroboscope ■ Features
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob VCB
Hale Waihona Puke Baidu
Safe operation area
Collector output capacitance C (pF) (Common base, input open circuited) ob
*1, 2
VCB = −10 V, IE = 0
vi
si
VCE = −2 V, IC = −2 A
90
e
ea s
Collector-emitter saturation voltage *1 Transition frequency
VCE(sat) Cob
IC = −3 A, IB = − 0.1 A
−10 150 A W °C −55 to +150 °C Conditions Min −20 −7 Typ
or m
120
Emitter-base voltage (Collector open)
V
1: Emitter 2: Collector 2.54±0.15 3: Base TO-92NL-A1 Package
−12
0
0
− 0.4
− 0.8
−1.2
−1.6
−2.0
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
Collector-emitter saturation voltage VCE(sat) (V)
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
VCB = −6 V, IE = 50 mA, f = 200 MHz VCB = −20 V, IE = 0, f = 1 MHz
Collector output capacitance (Common base, input open circuited)
Pl
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE P 90 to 135 Q 120 to 205 R 180 to 625
2SB1288
PC Ta
1.2
−6
IC VCE
Ta = 25°C IB = −40 mA −35 mA −30 mA −12
IC VBE
VCE = −2 V 25°C Ta = 75°C −25°C
Collector power dissipation PC (W)
1.0
−5
−10
Collector current IC (A)
0.8
−4
Collector current IC (A)
−25 mA −20 mA −15 mA −10 mA −2 −5 mA
−8
0.6
−3
−6
0.4
−4
M Di ain sc te on na tin nc ue e/ d
0.2
−1 −2
0
0
40
80
120
160
0
−1 mA
0
−2
−4
−6
−8
−10
−100
IC / IB = 30
600
VCE = −2 V
240
Ta = 75°C
Forward current transfer ratio hFE
−10
−1
Ta = 75°C
300
25°C
−25°C
200
− 0.1
100
− 0.01 − 0.01
− 0.1
−1
−10
tf o ht llow tp in :// g pa U na RL so a ni bo c. u ne t l t/s ate c/ st en in f
200
160
vi
IE = 0 f = 1 MHz Ta = 25°C
−100
Collector current IC (A)
ea s
e
si
Single pulse Ta = 25°C
−10
ICP IC
120
t = 10 ms
Pl
−1
t=1s
80
− 0.1
40
0 −1
−10
−100
− 0.01 − 0.1
Rating −30 −20 −7 −5 1
Unit V V
0.45+0.2 –0.1
0.45+0.15 –0.1
1 2 3
Collector current
A
Peak collector current
Collector power dissipation Junction temperature Storage temperature