2SA1300三极管参数 TO-92直插三极管2SA1300规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors
2SA1300 TRANSISTOR (PNP)
FEATURES z High DC Current G ain and E xcellent h FE L inearity z Low S aturation V oltage
MAXIMUM RATINGS (T a =25 unless otherwise noted ℃)
Symbol Parameter Value Unit
V CBO Collector-Base Voltage -20
V V CEO Collector-Emitter Voltage -10 V V EBO Emitter-Base Voltage -6
V
I C Collector Current -Continuous -2 A P C Collector Power Dissipation 0.75 W T j Junction Temperature 150 ℃ T stg
Storage Temperature
-55~ +15
℃
ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)
Parameter
Symbol Test conditions
M in T yp
M ax Unit
Collector-base breakdown voltage V (BR)CBO I C =-1mA , I E =0 -20 V Collector-emitter breakdown voltage V (BR)CEO I C =-10mA , I B =0 -10 V Emitter-base breakdown voltage V (BR)EBO I E =-1mA, I C =0 -6 V Collector cut-off current I CBO V CB =-20 V , I E =0 -0.1 µA Emitter cut-off current I EBO V EB =-6 V , I C =0 -0.1 µA DC current gain
h FE V CE =-1V, I C =-0.5A 140 600
Collector-emitter saturation voltage V CE(sat) I C =-2A, I B = -100mA
-0.82 V Base-emitter voltage V BE I C = -2A, V CE =-1V -1.5 V Transition frequency
f T V CE =-1V, I C = -0.5A f = 30MHz
140
MHz
Collector Output Capacitance
Cob
V CB =-10V,IE=0 f=1MHZ
50 pF
CLASSIFICATION OF h FE
Rank Y GR BL Range
140-280 200-400
300-600
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
【南京南山半导体有限公司 — 长电三极管选型资料】
【南京南山半导体有限公司 — 长电三极管选型资料】
【南京南山半导体有限公司 — 长电三极管选型资料】
Sponge strip
2000 pcs
Sponge strip The top gasket
Label on the Inner Box
Plastic bag
Label on the Outer Box
Inner Box: 333 mm ×162mm ×43mm
Outer Box: 350 mm × 340mm × 250mm
QA Label
Seal the box with the tape
Stamp “EMPTY” on the empty box
Inner Box: 240 mm ×165mm ×９５mm
Label on the Inner Box
Outer Box: 525 mm × 360mm × 262mm
Label on the Outer Box
QA Label
Seal the box with the tape
Stamp “EMPTY” on the empty box。