Copper-assisted, anti-reflection etching of silico
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专利名称：Copper-assisted, anti-reflection etching of
silicon surfaces
发明人：Fatima Toor,Howard Branz
申请号：US13423745
申请日：20120319
公开号：US08815104B2
公开日：
20140826
专利内容由知识产权出版社提供
专利附图：
摘要：A method () for etching a silicon surface () to reduce reflectivity. The method ()includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (), with a particle-to-particle spacing of 3 to 8 nanometers. The method
() includes positioning () the substrate () with a silicon surface () into a vessel (). The vessel () is filled () with a volume of an etching solution () so as to cover the silicon surface (). The etching solution () includes an oxidant-etchant solution (), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface () is etched () by agitating the etching solution () with, for example, ultrasonic agitation, and the etching may include heating () the etching solution () and directing light () onto the silicon surface (). During the etching, copper nanoparticles enhance or drive the etching process.
申请人：Fatima Toor,Howard Branz
地址：Sturbridge MA US,Boulder CO US
国籍：US,US
代理人：John C. Stolpa
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