DRY ETCHING DEVICE

专利名称：DRY ETCHING DEVICE
发明人：ITO FUMIKAZU,KAMIMURA TAKASHI,OTSUBO TORU 申请号：JP10841686
申请日：19860514
公开号：JPS62267483A
公开日：
19871120
专利内容由知识产权出版社提供
摘要：PURPOSE:To enhance the selection ratio of etching and to prevent the damage of a substrate by impressing a high-frequency voltage wherein the higher voltage of the periodically changing voltages is low enough in comparison to the amplitude on an electrode to be loaded with the substrate to be etched. CONSTITUTION:A processing gas is introduced in a plasma treating chamber, and the electric power impressed on the upper electrode 3 by a high-frequency power source 1 through a matching box 2 is conducted to a grounding through a substrate electrode 6 and a capacitor 12 to generate plasma between both electrodes. The ion formed in the plasma is injected on the substrate 5 which is put on the substrate electrode 6 through an insulator sheet 4 to carry out etching. A synthetic voltage obtained by combining the voltage generated by passing a current I1 from a waveform generator 7 through a dummy load 9 with a voltage from a variable DC bias power source 10 is impressed on the substrate electrode 6 in the dry etching device. The higher voltage of the synthetic high-frequency voltage VA is made sufficiently close to zero V in comparison to the amplitude. Consequently, the distribution of the energy injected on the substrate 5 is reduced, and the high-energy ion is eliminated.
申请人：HITACHI LTD 更多信息请下载全文后查看。