SC05-11EWA中文资料

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2N5551中文资料(fairchild)中文数据手册「EasyDatasheet - 矽搜」

集电极电流
50 VCB = 100V
10
10
10
1β
100 Co
o
125 C
0.1
o
-40 Co
25 Co
75 C
- CCEO(SALT)LECTOR-EMITTER VOLTAGE [V]
0.01
V
1
10
100
IC- COLLECTOR CURRENT [mA]
Figure 2. Collector-Emitter Saturation Voltage vs.
芯片中文手册,看全文,戳
2N5551 / MMBT5551 NPN通用放大器
2013年6月
描写
该装置是专为通用高压放大器和气体放电的显示驱动程序.
2N5551
TO-92
MMBT5551
3
2
1 SOT-23
Marking: 3S 1. Base 2. Emitter 3. Collector
MMBT5551
350 2.8
357
Units
mW mW/°C °C/W °C/W
2
芯片中文手册,看全文,戳
电气特性
(4)
价值观是在T 符
A = 25°C除非另有说明. 参数
断特性
V（BR）CEO 集电极 - 发射极击穿电压 V（BR）CBO 集电极基击穿电压 V （BR）EBO 发射极基极击穿电压
Value
160 180
6 600 -55到+150
2N5551 / MMBT5551 - NPN通用放大
器
Units
V V V mA °C
热特性
价值观是在T

EE-SPX304-W2A中文资料(omron)中文数据手册「EasyDatasheet - 矽搜」

Extension cable
避免从微型光电断开时电源被提供给微型光电或微型光电可
能会损坏.
如果金属安装基座进行感性电
噪音,可微型光电被意外激活.如果噪音是个问题,采取以下预防措施：
1. GND端子连接到安装基座,于是就有是在微型光电和安装基座之间电势没有差别.
2.通过GND端子连接到安装基座
0.47- µF电容.
间距d（毫米）
在TR上
Dark-ON mode
在TR上
Dark-ON mode
EE-SPX305-W2 d A
d
注：EE-SPX405-W2A检测位置特性是相反那
些EE-SPX305-W2A.
TR关闭
间距d（毫米）
TR关闭
间距d（毫米）
操作
J 内部/外部接线图
光时 ON /遮光时 ON
Operation indicator
零件号
EE-SPX302-W2A EE-SPX402-W2A EE-SPX304-W2A EE-SPX404-W2A EE-SPX305-W2A EE-SPX405-W2A EE-SPX306-W2A EE-SPX406-W2A
1
芯片中文手册,看全文,戳
EE- -SPX302/402/304/404/305/405/306/406- -W2A
20 (0.79)
6.95(0.27)
14.5 (0.57)
1000±30
端子配置
红色（褐色）V CC
白色（黑色）输出
黑（蓝色）GND（0V）
IEC colors are shown in parentheses.
4
芯片中文手册,看全文,戳
EE- -SPX302/402/304/404/305/405/306/406- -W2A

SMS05C中文资料

110 100
90 80 70 60 50 40 30 20 10
0 0
25
50
75
100
125
150
Ambient Temperature - TA (oC)
Clamping Voltage vs. Peak Pulse Current
Clamping Voltage - VC (V)
45
40 SMS24C
Non-Repetitive Peak Pulse Power vs. Pulse Time
10
Peak Pulse Power - PPP (kW)
1
0.1
Percent of IPP
0.01 0.1
110 100
90 80 70 60 50 40 30 20 10
0 0
1
10
100
Pulse Duration - tp (µs)
SMS15C Parameter
Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Junction Capacitance
Symbol VRWM VBR IR VC VC Cj
Minimum
It = 1mA
6
VRWM = 5V, T=25°C
IPP = 5A, tp = 8/20µs
IPP = 24A, tp = 8/20µs
Between I/O Pins and Gnd
VR = 0V, f = 1MHz
Typical 325

SC111中文资料

PRELIMINARY - October 9, 2000TEL:805-498-2111 FAX:805-498-3804 WEB:PRELIMINARY - October 9, 2000ELECTRICAL CHARACTERISTICSUnless specified: V CC = 4.75V to 12.6V; GND = PGND = 0V; FB = V O ; V BSTL = 12V; V BSTH-PHASE = 12V; T J = 25o C PARAMETER CONDITIONSMINTYPMAXUNITSPOWER SUPPLY Supply Voltage V CC 4.412.6V Supply Current EN = V CC8mA Line RegulationV IN = 2.5 ± 0.5V, V O = V IN /2 @ 0A0.5%UNDER VOLTAGE LOCKOUT Turn-On Threshold TBD 4.2TBD V Turn-Off Threshold TBD4.0TBDVERROR AMPLIFIER Transconductance 2mS Open Loop DC Gain 50dB Bandwidth -3dB 500kHz COMP Source Capability ±250µA Input Bias 58µAOSCILLATOR Oscillator Frequency 225250275kHz Oscillator Max Duty Cycle 9095%Ramp Height 1VTIMINGMinimum Off-Time 100ns Dead Time80nsABSOLUTE MAXIMUM RATINGSParameter Symbol Maximum Units V CC , BSTL to GND V IN-0.5 to 14V PGND to GND ± 0.5V PHASE to GND -0.5 to 18V BSTH to PHASE14V Thermal Resistance Junction to Case θJC 45°C/W Thermal Resistance Junction to Ambient θJA 115°C/W Operating Temperature Range T A 0 to 70°C Storage Temperature Range T STG -65 to +150°C Lead Temperature (Soldering) 10 secT LEAD 300°CPRELIMINARY - October 9, 2000BLOCK DIAGRAMELECTRICAL CHARACTERISTICSUnless specified: V CC = 4.75V to 12.6V; GND = PGND = 0V; FB = V O ; V BSTL = 12V; V BSTH-PHASE = 12V; T J = 25o C PARAMETER CONDITIONS MIN TYP MAX UNITS MOSFET DRIVERSPeak DH Sink/Source Current BSTH - DH = 4.5V, DH - PHASE = 3.0V0.5A DH - PHASE = 1.5V0.1Peak DL Sink/Source CurrentBSTL - DL = 4.5V, DL - GND = 3.0V0.5ADL - GND = 1.5V0.1PROTECTIONOver Current Set Isource V OCSET = 4.5V 180200220µA SOFT START Charge Current V SS = 1.5V 10µA Discharge Current V SS = 1.5V2µA POWER GOOD Upper Threshold 112%Lower Threshold 88%PWRGD Voltage Low I PWRGD = 2mA0.5V REFERENCEREFOUT Source Current 3mAInput Bias58µANOTE:(1) Specification refers to application circuit (Figure 1.).PIN DESCRIPTIONPin #Pin Name Pin Function1 VCC Chip supply voltage.2SS/ENBL Soft start/Enable.3OCSET Current limit set point.4PWRGD Logic high indicates correct output.5GND Ground.6PHASE Phase node connection between MOSFET’s.7DL Low side driver output.8DH High side driver output.9BSTH High side drive supply.10BSTL Low side drive supply.11COMP Error amplifier output, compensation.12SENSE Error amplifier negative input.13REFIN Error amplifier positive input.14REFOUT Buffered reference voltage.NOTE:(1) All logic level inputs and outputs are open collector TTL compatible.PRELIMINARY - October 9, 2000THEORY OF OPERATIONSynchronous Buck ConverterV TERMINATION power is provided by a synchronous,voltage-mode pulse width modulated (PWM) controller.This section has all the features required to build a high efficiency synchronous buck converter for termi-nation of power application.The output voltage of the synchronous converter is set and controlled by the output of the error amplifier. The resistive divider generates reference voltage for the error amplifier from an external chipset voltage which is usually 2.5V. The inverting input of the error amplifier receives its voltage from the SENSE pin.The internal oscillator uses an on-chip capacitor and trimmed precision current sources to set the oscillation frequency to 250kHz. The triangular output of the os-cillator sets the reference voltage at the inverting input of the PWM comparator. The non-inverting input of the comparator receives it’s input voltage from the error amplifier. When the oscillator output voltage drops be-low the error amplifier output voltage, the comparator output goes high. This pulls DL low, turning off the low-side FET, and DH is pulled high, turning on the high-side FET (once the cross-current control allows it).When the oscillator voltage rises back above the error amplifier output voltage, the comparator output goes low. This pulls DH low, turning off the high-side FET,and DL is pulled high, turning on the low-side FET (once the cross-current control allows it).As SENSE increases, the output voltage of the error amplifier decreases. This causes a reduction in the on-time of the high-side MOSFET connected to DH,hence lowering the output voltage.Under Voltage LockoutThe under voltage lockout circuit of the SC1110 as-sures that both the high-side MOSFET driver outputs remain in the off state whenever the supply voltage drops below set parameters. Lockout occurs if V CC falls below 4.0V. Normal operation resumes once V CC rises above 4.2V.Soft StartInitially, SS/ENABLE sources 10µA of current tocharge an external capacitor. The outputs of the error amplifiers are clamped to a voltage proportional to the voltage on SS/ENABLE. This limits the on-time of the high-side MOSFETs, thus leading to a controlled ramp-up of the output voltages.R DS(ON) Current LimitingThe current limit threshold is set by connecting an ex-ternal resistor from the V CC supply to OCSET. The volt-age drop across this resistor is due to the 200µA inter-nal sink sets the voltage at the pin. This voltage is compared to the voltage at the PHASE node. This comparison is made only when the high-side drive is high to avoid false current limit triggering due to uncon-tributing measurements from the MOSFET’s off-voltage. When the voltage at PHASE is less than the voltage at OCSET, an overcurrent condition occurs and the soft start cycle is initiated. The synchronous switcher turns off and SS/ENABLE starts to sink 2µA.When SS/ENABLE reaches 0.8V, it then starts to source 10µA and a new cycle begins.Hiccup ModeDuring power up, the SS/ENABLE pin is internally pulled low until VCC reaches the undervoltage lockout level of 4.2V. Once V CC has reached 4.2V, the SS/EN-ABLE pin is released and begins to source 10µA of current to the external soft-start capacitor. As the soft-start voltage rises, the output of the internal error am-plifier is clamped to this voltage. When the error signal reaches the level of the internal triangular oscillator,which swings from 1V to 2V at a fixed frequency of 250kHz, switching occurs. As the error signal crosses over the oscillator signal, the duty cycle of the PWM signal continues to increase until the output comes into regulation. If an over-current condition has not oc-curred the soft-start voltage will continue to rise and level off at about 2.2V.An over-current condition occurs when the high-side drive is turned on, but the PHASE node does not reach the voltage level set at the OCSET pin. ThePHASE node is sampled only once per cycle during the valley of the triangular oscillator. Once an over-current occurs, both the high-side and low-side drivers turn off and the SS/ENABLE pin begins to sink 2uA. The soft-start voltage will begin to decrease as the 2uA of cur-rent discharges the external capacitor. When the soft-start voltage reaches 0.8V, the SS/ENABLE pin will be-gin to source 10uA and begin to charge the external capacitor causing the soft-start voltage to rise again.Again, when the soft-start voltage reaches the level of the internal oscillator, switching will occur.If the over-current condition is no longer present, nor-mal operation will continue. If the over-current condi-tion is still present, the SS/ENABLE pin will again begin to sink 2uA. This cycle will continue indefinitely until the over-current condition is removed.PRELIMINARY - October 9, 2000 SIMULATION WAVEFORMS 2.5V and 1.25V ramp upOutput current of the VTT supplyPRELIMINARY - October 9, 2000 OUTLINE DRAWING SO-14ECN00-1363。

反射光电ex-11ea手册

反射光电EX-11EA手册提供了该型号传感器的详细信息和使用指南。

EX-11EA是一种超薄型光电传感器，内置放大器，适用于各种检测应用，如印刷电路板定位、IC检测等。

它具有以下特点：
1. 符合标准：该型号符合EMC指令EN60947-5-2、RoHS指令以及ISO13849-1（1类，PLc）标准。

2. 检测能力：EX-11EA能够检测最小直径为1mm的不透明物体，检测距离可达150mm。

3. 安装方式：它设计有安装孔，方便用户根据需要安装在不同的位置上。

传感器由投光部和受光部组成，工作时会有指示灯显示其工作状态。

4. 平行移动特性：透过型的EX-11E和EX-15E型号在平行移动时具有特定的特性，例如在一定的位移范围内保持检测稳定性。

5. 应用场景：EX-11EA-PN型号适用于多种应用场景，包括印刷电路板定位、IC检测、印刷电路板机架检测、晶片盒检测、薄环检测以及检查托盘中是否存在电容器等。

PSC05-11EWA, 规格书,Datasheet 资料

Notes: 1. 1/10 Duty Cycle, 0.1ms Pulse Width. 2. 2mm below package base.
High Efficiency Red 75 30 160 5 -40°C To +85°C 260°C For 3-5 Seconds
Units mW mA mA V
Note: 1. Luminous intensity/ luminous Flux: +/-15%.
Electrical / Optical Characteristics at TA=25°C
Symbol λpeak λD [1] Δλ1/2 C VF [2] IR Parameter Peak Wavelength Dominant Wavelength Spectral Line Half-width Capacitance Forward Voltage Reverse Current Device High Efficiency Red High Efficiency Red High Efficiency Red High Efficiency Red High Efficiency Red High Efficiency Red Typ. 627 625 45 15 2.0 2.5 10 Max. Units nm nm nm pF V uA Test Conditions IF=20mA IF=20mA IF=20mA VF=0V;f=1MHz IF=20mA VR=5V
12.7mm (0.5INCH)16 SEGMENT SINGLE DIGIT ALPHANUMERIC DISPLAY
Part Number: PSC05-11EWA High Efficiency Red

SC1105CS.TR中文资料

POWER MANAGEMENTSC1105/6Voltage ModePWM ControllerPRELIMINARY FeaturesApplicationsDescriptionThe SC1105 is an asynchronous voltage mode PWM controller for applications that require an option of two voltages. An input is provided to select either the input voltage (VIN) or a user programmed voltage at the output.When the PWM is enabled the 200kHz fixed frequency PWM regulates the output to either a fixed voltage of 1.5V (SC1105) or a user programmed voltage (SC1106). When the PWM is disabled the high side MOSFET gate is turned on to deliver the input voltage directly to the output.The SC1105/6 internal architecture and functional blocks are based on the SC1101 integrated circuit, therefore, the layout guidelines and reference circuits can be readily applied.u Low cost / small sizeu Switch mode efficiency > 85%u1% reference voltage accuracyu500mA output driveu SO-8 packageu Switchable AGP supply 1.5V or 3.3Vu Peripheral card supplies (backward compatibility) u User selectable edge connectorsu PCMCIA cardsPOWER MANAGEMENT PRELIMINARYElectrical CharacteristicsAbsolute Maximum Ratingsr e t e m a r a P l o b m y S m u m i x a M s t i n U e g a t l o V t u p n I V C C D N G o t 7+o t 3.0-V l a i t n e r e f f i D d n u o r G P D N G D N G o t +1V e g a t l o V t u p n I t s o o B DN G o t T S B 51+o t 3.0-V e r u t a r e p m e T g n i t a r e p O T A 07+o t 0C °eg n a R e r u t a r e p m e T e g a r o t S T G T S 521+o t 54-C °.c e S 01)g n i r e d l o S (e r u t a r e p m e T d a e L T L 003C °t n e i b m A o t n o i t c n u J ,e c n a t s i s e R l a m r e h T q A J 561W /C °e s a C o t n o i t c n u J ,e c n a t s i s e R l a m r e h T q C J 04W /C °)l e d o M y d o B n a m u H (g n i t a R D S E DS E 2Vk V CC = 4.75V to 5.25V; GND = P GND = 0V; V O = 1.5V; T A = 25°C; BST = 12V; 2A; V IN = 3.3V + 5%.Per test circuit, unless otherwise specified.r e t e m a r a P l o b m y S s n o i t i d n o C n i M p y T x a M s t i n U ec n e r e f e R V FE R 832.1052.1362.1Vpm e T r e v O 522.1052.1572.1t n e r r u C s a i B E S N E S O V I B 6011C S 0.20.8A µt n e r r u C t n e c s e i u Q I Q V o t n i t n e r r u C C C n i p 0.50.8A m d a o L n o i t a l u g e R G E R D A O L I O A8o t A 1=5.00.1%e n i L n o i t a l u g e R G E R E N I L 1.0%y c n e u q e r F r o t a l l i c s O C S O 081002022z H k e l c y C y t u D x a M .c .d 0959%tn e r r u C e c r u o S /k n i S H D I OV T S B V 5.4=H D -V (H D V -D N G P )V 2=005AmPOWER MANAGEMENT PRELIMINARY Test CircuitPOWER MANAGEMENT PRELIMINARYBlock DiagramPin ConfigurationOrdering InformationPin DescriptionsTop View(8 Lead Plastic SOIC)ec i v e D )1(e g a k c a P T (e g n a R p m e T J )R T .S C 5011C S 8-O S C °521o t °0RT .S C 6011C S 8-O S C°521o t °0Note:(1) Only available in tape and reel packaging. A reel contains 2500 devices.#n i P em a N n i P no i t c n u F n i P 1V C C .e g a t l o v y l p p u s e c i v e D 2C N .n o i t c e n n o c o N 3#T E D E P Y T .e l b i t a p m o c L T T -t u p n i l e v e l c i g o L .V 5.1=o L ;V 3.3=i H ,t c e l e s e g a t l o v t u p t u O 4D N G P .d n u o r g r e w o p e c i v e D 5H D .t u p t u o r e v i r d e d i s h g i H 6T S B .r e v i r d e d i s h g i h r o f y l p p u S V 217E S N E S O V .n i a h c k c a b d e e f l a n r e t n i f o d n e p o T 8DN G .d n u o r g l a n g i s l l a m SPOWER MANAGEMENT PRELIMINARY Typical CharacteristicsPOWER MANAGEMENT PRELIMINARYSemtech CorporationPower Management Products Division 652 Mitchell Rd., Newbury Park, CA 91320Phone: (805)498-2111 FAX (805)498-3804Outline DrawingContact InformationLand Pattern - SO-8。

CS-iTWD-05 无线水浸智能监测终端使用说明书

CS-iTWD-05 无线水浸智能监测终端使用说明书（CS-iTWD-05-SS）（REV:A）西安中星测控有限公司修订履历修订日期版本修订内容修订人2019/04/22 A 首次发布晏峰编制审核标准化批准签名日期注：本签署页仅限公司内部使用。

目次1 概述 (1)1.1 产品简介 (1)1.2 工作原理 (1)2 技术指标 (2)2.1 主要技术参数 (2)2.2 外形尺寸 (2)3 使用说明 (3)3.1 安装SIM卡 (3)3.2 安装电池 (3)3.3 入网说明 (4)3.4 通信协议 (4)4 安装方法 (4)5 选型指导 (6)6 附件 (7)7 注意事项 (7)7.1 终端联网不成功 (7)7.2 产品可能因以下原因产生漏报现象 (7)8 声明 (7)CS-iTWD-05无线水浸智能监测终端使用说明书1 概述1.1 产品简介无线水浸智能监测终端用于监测是否有水浸入，当有水浸入时会触发终端报警，报警信号通过无线传输方式发送至监控中心，监控中心对数据进行解析并判断警情。

该终端产品提供LoRaWAN、NBIOT、GPRS三种无线通讯方式，可应用于路基浸水、机房浸水、桥下积水等应用场合的监测。

终端产品使用电池供电，具有安装方便、电池寿命长、检测准确率高，工作稳定等特点。

图1 无线水浸智能监测终端示意图1.2 工作原理无线水浸智能监测终端采用漏水探测电极进行水浸探测，当探头的两个电极被水浸入时，触发终端报警并通过无线网络将报警信息发送至监控中心。

2 技术指标2.1 主要技术参数无线水浸智能监测终端的主要技术指标见表1所示。

表1 主要技术参数名称技术参数备注工作频段434MHz/470MHz/868MHz/915MHz LoRaWAN B1/B3/B5/B8/B20 NB-IoT 850/900/1800/1900MHz GPRS设备类型Class A LoRaWAN天线接口FPC天线工作电压锂电池供电ER26500（3.6V）ER26500+SPC1550电池寿命3-5年工作正常且每天最多两次上报数据工作最大电流＜200mA LoRaWAN ＜350mA NB-IoT ＜2000mA GPRS休眠电流＜25.0μA线缆长度3米（默认）长度可定制防护等级IP68外壳材质采用PC+ABS防老化、防腐蚀，防撞击材料工作温度(-25～+85)℃消费级SIM卡(-40～+85)℃工业级SIM卡/ LoRaWAN 存储温度(-40～+85)℃2.2 外形尺寸无线水浸智能监测终端的外形及尺寸标注见图2所示。

MAV-11SM中文资料

ABSOLUTE MAXIMUM RATING7
DC POWER at Pin 3
THERMAL RESISTANCE 6
θ jc °C/W 115 105 115 100 120 120 140 110 100 110 95 85 125
CAPD DATA
(see RF/IF Designer Handbook)
2000 — 11.0 10.5 — 11.0 11.0 — — 10.0** 10.0** — 6.5** —
note 5 note 1 Typ. Output Input (1 dB (no Comp.) damage) MIN. 13.0 8.5 8.0 7.0 9.0 8.5 19.0 12.5 7.5 7.5 7.0 5.5 9.0 +1.5 +4.5 +10.0 +12.5 +2.0 +5.5 +12.5 +1.5 +4.5 +10.0 +11.5 +18.0 +17.5 +13 +13 +13 +13 +13 +13 +13 +13 +13 +13 +13 +20 +13
cb cb cb cb
3.0 +14.5 5.0 +19.0 3.3 +27.0 5.5 +14.0 6.5 +17.0 6.0 +23.0 7.0 +24.5 6.5 +29.0 3.6 +30.0
WW107 cb WW107 cb WW107 cb RRR137 cb ቤተ መጻሕፍቲ ባይዱRR137 cb RRR137 cb RRR137 cb RRR137 cb RRR137 cb

VN05H中文资料

VN05HHIGH SIDE SMART POWER SOLID STATE RELAYJuly 1998BLOCK DIAGRAMsOUTPUT CURRENT (CONTINUOUS):12A @ T c =25o Cs LOGIC LEVEL 5V COMPATIBLE INPUT s THERMAL SHUT-DOWNs UNDER VOLTAGE SHUT-DOWNs OPEN DRAIN DIAGNOSTIC OUTPUT sVERY LOW STAND-BY POWER DISSIPATIONDESCRIPTION The VN05H is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded.Built-in thermal shut-down protects the chip from over temperature and short circuit.The input control is 5V logic level compatible.The open drain diagnostic output indicates open circuit (no load) and over temperature status.1/10VN05HABSOLUTE MAXIMUM RATINGCONNECTION DIAGRAMSCURRENT AND VOLTAGE CONVENTIONSVN05H THERMAL DATAELECTRICAL CHARACTERISTICS (V CC = 9 to 36 V; -40 ≤ T j≤ 125 o C unless otherwise specified) POWERSWITCHINGLOGIC INPUTELECTRICAL CHARACTERISTICS (Continued)PROTECTION AND DIAGNOSTICSexceed 10 mA at the input pin.(•) Status determinaion > 100 µs after the switching edge.Note 1: Above V CC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off it junction temperature reaches thermal shutdown temperature.FUNCTIONAL DESCRIPTIONThe device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic.To protect the device against short circuit and over-current condition the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 o C. When the temperature returns to about 125 o C the switch is automatically turned on again. To ensur the protection in all V CC conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3and 5) at 29 V. The device is able to withstand a load dump according the test pulse 5 at level III of the ISO TR/1 7631.Above V CC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature.PROTECTING THE DEVICE AGAINST REVERSE BATTERYThe simplest way to protect the device against a continuous reverse battery voltage (-26V) is toinsert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3).The consequences of the voltage drop across this diode are as follows:-If the input is pulled to power GND, a negativevoltage of -V F is seen by the device. (V IL , V IH thresholds and V STAT are increased by V F with respect to power GND).-The undervoltage shutdown level is increasedby V F .If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1](see application circuit infig. 4), which becomes the common signal GND for the whole control board.In this way no shift of V IH , V IL and V STAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses thatoccours in the automotive environment.VN05HTRUTH TABLEFigure 1:WaveformsFigure 2:Over Current Test CircuitVN05HFigure 3:Typical Application Circuit With A Schottky Diode For Reverse Supply ProtectionFigure 4:Typical Application Circuit With Separate Signal GroundVN05HVN05HVN05HVN05HInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A..VN05H。

慢性阻塞性肺疾病病人吸入用药依从性的Meta分析

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美国海利威尔公司V15系列微型基本开关说明书

V15 SERIESMICRO SWITCH Standard Miniature Basic Switches004945Issue 12DESCRIPTIONHoneywell’s MICRO SWITCH V-Basic Standard Switch, V15 Series is anelectromechanical switch designed to provide outstanding value in a reliable global package. This switch is often ideal for “low-cost-of-failure” applications, where the cost is minimal to replace or service any failure related to the switch. With a wide variety of operating forces, and amperage ratings, the V15 is designed for numerous types of applications.Available in both pin plunger and levered styles, the V15 Series also offers a multitude of termination styles to fit almost any application.DIFFERENTIATION• Choice of actuation, termination, and operating characteristics that can allow for flexibility in numerous types of applications• With a broad current capacity, one switch package can control a wide range of electrical loadsAPPLICATIONS• Appliances • Furnaces• Gaming machines • Ice makers • Power washers • Vending machinesVALUE TO CUSTOMERS• Wide choice of electrical ratings: 0.1 A, 5 A, 10 A, 16 A, 22 A, 26 A • Certified for global use: UL/cUL, ENEC, CQC• Available with pin plungers or integral levers to meet multiple application and equipment requirementsFEATURES• Broad range of electrical loads: 0.1 A, 5 A, 10 A, 16 A, 22 A, 26 A • Long service life: over one million mechanical operations• Gold contacts are also available for controlling logic level/low energy circuits• World-wide package size acceptance • UL/CSA, cUL, ENEC, and CQC approvals• Variants with cadmium-free and optimized contacts availableHoneywell offers a wide range of MICRO SWITCHthe large basic switches,Sensing and Internet of Things 3V15S05 PRODUCT NOMENCLATURE V15Switch TypeTemperatureGradeSLeverPositionElectrical Rating05V15 Series Standard Basic SwitchTerminal TypeCircuit Code—ZAOperating Force(at pin plunger max)200Mounting HolesKALever Type06Special DesignatorC—Housing Type1V15T10 PRODUCT NOMENCLATUREV15Switch TypeTemperatureGradeTLever PositionElectrical Rating10V15 Series Standard Basic SwitchTerminal TypeCircuit Code—ZAOperating Force(at pin plunger max)200Mounting HolesKALever Type06A special designator letter is used only when there is a special modiﬁcationto the switch.Review Product Speciﬁcation to determine the exact differences. Below is an example.Special DesignatorC—Housing Type1V15H16/T16/T22/H22/T26 PRODUCT NOMENCLATURE V15Switch TypeTemperatureGradeHLever PositionElectrical Rating16V15 Series Standard Basic SwitchTerminal TypeCircuit Code—ZAOperating Force(at pin plunger max)200Mounting HolesKALever Type06Special DesignatorC—Housing Type1PinPlunger4 ShortStraightLeverStandardStraightLeverSensing and Internet of Things 5LongStraightLeverSimulatedRoller6 ShortRollerLeverSensing and Internet of Things 7RollerLever8 Sensing and Internet of Things 9MOUNTING DIMENSIONSFIGURE 1. V15 SERIES STANDARD SWITCH DIMENSIONSFIGURE 2. V15 SERIES METRIC MOUNTING HOLE DIMEN-SIONS FOR Ø 3 MM PINS OR SCREWSMetric mounting for Ø 3 mm pins or screws Ø 3,10 mm +0,10 mm/-0,05 mm 10,3 m m ±0,1 m m Ø 0.12 in +0.004 in/-0.002 in mounting holeFIGURE 3. V15 SERIES USA MOUNTING HOLE DIMENSIONS FOR #4 SCREWSUS mounting for #4 screws - K Designator Ø 2,90 mm +0,10 mm/-0,05 mm10,3 m m ±0,1 m m Ø 0.11 in +0.004 in/-0.002 in mounting holeFIGURE 4. V15 SERIES HOUSING DIMENSIONS10 Sensing and Internet of Things 1112 STANDARD LEVER OPTIONS • DIMENSIONSFIGURE 19. V15 SERIES A01/STRAIGHT SHORT LEV erFIGURE 20. V15 SERIES A02/STANDARD STRAIGHT LEVERFIGURE 21. V15 SERIES A03/LONG STRAIGHT LEVERFIGURE 22. V15 SERIES A04/SIMULATED ROLLER LEVERFIGURE 23. V15 SERIES A05/SHORT ROLLER LEVERFIGURE 24. V15 SERIES A06/ROLLER LEVERNOTE: These dimensions apply for the “A” lever position. For the “B” leverposition, please add 5,7 mm [0.224 in].Position APosition BWARRANTY/REMEDYHoneywell warrants goods of its manufacture as being free of defective materials and faulty workmanship during the applicablewarranty period. Honeywell’s standard product warranty applies unless agreed to otherwise by Honeywell in writing; please refer to your order acknowledgment or consult your local sales office for specific warranty details. If warranted goods are returned to Honeywell during the period of coverage, Honeywell will repair or replace, at its option, without charge those items that Honeywell, in its sole discretion, finds defective. The foregoing is buyer’s sole remedy and is in lieu of all other warranties, expressed or implied, including those of merchantability and fitness for a particular purpose. In no event shall Honeywell be liable for consequential, special, or indirect damages.While Honeywell may provide application assistance personally, through our literature and the Honeywell web site, it is buyer’s sole responsibility to determine the suitability of the product in the application.Specifications may change without notice. The information we supply is believed to be accurate and reliable as of this writing.However, Honeywell assumes no responsibility for its use.004945-12-EN | 12 | 08/20© 2019 Honeywell International Inc. All rights reserved.m WARNINGIMPROPER INSTALLATION• Consult with local safety agenciesand their requirements whendesigning a machine-control link, interface and all control elements that affect safety.• Strictly adhere to all installationinstructions. Failure to comply with theseinstructions could result in death or serious injury.m WARNINGMISUSE OFDOCUMENTATION•The information presented in this product sheet is for reference only. Do not use this document as a product installation guide.•Complete installation, operation, and maintenance information is provided in the instructions supplied with each product.Failure to comply with theseinstructions could result in death or serious injury.HoneywellSensing and Internet of Things 830 East Arapaho Road Richardson, TX FOR MORE INFORMATIONHoneywell Sensing and Internet of Things services its customers through a worldwide network of sales offices and distributors. For application assistance, current specifications, pricing, or the nearest Authorized Distributor, visit or call:USA/Canada +302 613 4491Latin America +1 305 805 8188Europe +44 1344 238258Japan +81 (0) 3-6730-7152Singapore +65 6355 2828Greater China+86 4006396841RELATED DOCUMENTATIONThe following associated literature is available on the Honeywell web site at :• Installation instructions• Product part listing/nomenclature tree• Product application-specific information– Application note: Electronic sensorsand eectromechanical switches in valves and flow meters – Application note: Electronic sensorsand MICRO SWITCH switches in industrial air compressors – Application note: Sensors andswitches for potential HVAC/R applications – Application note: Sensors andswitches for valve monitors and valve indicators – Application note: Sensors andswitches in sanitary valves – Case study: Switching it up– Technical bulletin: Applying precision switches。

威索燃油燃烧器5-11号(中文)

16
17
燃烧器选择－功率/炉膛背压 Monarch M/MS和RMS型
18
19
技术教据 Monarch L 和RL型
燃烧器结构型号
带有内置开关订货号
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电压与频率燃烧器一般用于三相交流电 (D)400V,50H z。如需使用其它电压频率请说明(不另收费)。燃烧器电机—标准结构：绝缘等级F，防护形式IP54。

功能示意图
RL8-RL11
燃烧器 RL5－RL7 两个电磁阀(3)和(5)都是串联的。在回油管路上的电磁阀 (3)和(5)的安装方向与油的流动方向相反。
燃烧器 RL8－RL11 两个电磁阀(6)和(7)都是串联的。在回油管路上的电磁阀 (7)的安装方向与油的流动方向相反。
燃烧器M5Z,MS7Z-MS9Z,RMS7-RMS11 进油管路上的电磁阀(3)/(6)和回油管路上的电磁阀 (3)/(7)都是串联的。回油管路上的电磁阀(3)/(7)的安装方向与油的流动方向相反。
重油的燃烧 MS和RMS型重油燃烧器的额定功率不得低于100k g/h。此外，我们建议燃重油时尽量使用RMS系列燃烧器。
环境条件标准配置的燃烧器不适合置于户外，燃烧器的材料、结构和防护形式均要求其在-10℃至40℃的室内环境下运行。低温条件下的使用请先咨询厂方。
特殊结构我们还能提供如船用型以及用于加工工艺等设备的特殊结构燃烧器。
功率调节Z(二级式)
■ 起动时，打开1号电磁阀和安全电磁阀后，可点火。

SC A规格书v

SOP16
OUT0 OUT1 OUT2
OUT3
OUT4
VDD 10K 10K 10K 10K 10K RU0 RU1 RU2 RU3 RU4
3.2.2 模拟电压输出
VDD
5.1K
SDA
RU
SCL
OUT0
AO
SC05A
OUT1
R1
1.3K
SOP16
OUT2
R2
3.3K
OUT3
R3
7.5K
OUT4
R4
20K
Dimensions In Millimeters
Min
Nom
Max
1.30
1.50
1.70
0.06
0.16
0.26
0.30
0.40
0.55
0.15
0.25
0.35
9.70
10.00
10.30
3.75
3.95
4.15
--
1.27
--
5.70
6.00
6.30
0.45
0.65
0.85
0°
--
8°
Dimensions In Inches
1.2 特征
◇ 5 个完全独立的触摸感应按键 ◇ 保持自动校正，无需外部干预 ◇ 按键输出经过完全消抖处理 ◇ 多接口 – I2C 串行接口 / 并行一对一输出 ◇ 所有按键共用一个灵敏度电容 ◇ 感应线长度不同不会导致灵敏度不同 ◇ 2.5V ~ 6.0V 工作电压 ◇ 符合 RoHS 指令的环保 SOP16 封装
1.3 应用
◇ 替代机械开关 ◇ 家庭应用(电视机, 显示器键盘) ◇ 玩具和互动游戏的人机接口 ◇ 门禁按键 ◇ 灯控开关 ◇ 密封键盘面板

苏州新亚科技 V1.2 1 NA_SC05 螺杆压缩机控制模块技术手册说明书

NA_SC05螺杆压缩机控制模块技术手册主要功能及技术指标主要功能如下：☞压力显示和保护：压力传感器保护整个机组的运行。

☞三种类型启动方式：直启、分线圈、星三角转换启动。

☞多种内置能量控制：四段容调控制，100%、75%、50%、25%，实现螺杆机组的加卸载。

☞冷凝风机控制：使用系统冷凝压力控制，将冷凝风机控制在设定的压力范围之内。

☞高压/低压告警：高压压力过高或低压压力过低告警。

☞油温系统控制：油冷却控制及油温控制。

☞回油阀控制：通过压缩机运行二种方式开启电磁阀。

☞液喷射控制：根据排气温度控制，当排气温度过高则开启喷液电磁阀。

☞经济器控制：根据吸气压力开启经济器，适度使之过冷，提升制冷量。

☞压缩机电流监测：根据压机运行电流保护压缩机。

☞风机、水泵电流监测：根据风机水泵运行电流保护风机。

☞温度监测：排气温度超过设定值告警。

☞外部告警功能：外部开关量告警信号输入。

☞相序保护：三相电相序保护压缩机运转方向正确。

主要技术指标：压力显示范围：低压：-0.5 - 11bar 高压：0 - 30bar 精度1%压力设定范围：低压：-2.0 - 7bar 高压：-1.0 - 30bar 精度1%压力传感器类型：电流型4~ 20mA 使用温度：-40 - 100℃温度显示范围：-50 - 150℃温度设定范围：-45 –145℃电流检测范围：压缩机电流25～ 450A；风机、水泵电流5 ～ 30A；温度传感器类型：NTC R25=5kΩ，B（25/50）= 3470K电源电压：AC 380V/50Hz使用环境：温度-10℃～ 50℃，湿度≤85％，无凝露海拔低于2000米，不适宜在含有酸、碱的场合使用禁止在易燃易爆环境下使用输出负载能力：AC 5A/250V执行标准： Q/320585 XYK 01免责声明：请在使用前详细阅读本使用手册。

这将有利于对机组调试和使用取得最佳的性能及良好的运行状态。

任何不良的操作都有可能导致机组损坏及控制器的损坏，请在接线前仔细对照本使用手册的接线图及使用方法。

全身麻醉手术病人苏醒延迟危险因素的Meta分析

全身麻醉手术病人苏醒延迟危险因素的M e t a分析熊浪宇1,曹学华2*,王晓霞1,向凤1,胡婉琴1,贾钰11.成都中医药大学护理学院,四川610036;2.四川省人民医院R i s k f a c t o r s f o r d e l a y e d r e c o v e r y i n p a t i e n t s u n d e r g o i n g g e n e r a l a n a e s t h e s i a:aM e t a-a n a l y s i sX I O N GL a n g y u,C A OX u e h u a,W A N GX i a o x i a,X I A N GF e n g,H U W a n q i n,J I AY uS c h o o l o fN u r s i n g,C h e n g d uU n i v e r s i t y o f T r a d i t i o n a l C h i n e s eM e d i c i n e,S i c h u a n610036C h i n aC o r r e s p o n d i n g A u t h o r C A OX u e h u a,E-m a i l:1252668204@q q.c o mA b s t r a c t O b j e c t i v e:T oi n v e s t i g a t et h ei n c i d e n c ea n dr i s kf a c t o r so fd e l a y e dr e c o v e r y i n p a t i e n t su n d e r g o i n gg e n e r a la n e s t h e s i a. M e t h o d s:L i t e r a t u r e o n t h e r i s kf a c t o r so fd e l a y e dr e c o v e r y i n p a t i e n t su n d e r g o i n gg e n e r a l a n e s t h e s i aw e r er e t r i e v e df r o m P u b M e d, E M b a s e,S c i e n c e D i r e c t,EB SC O,W e b o fS c i e n c e,C N K I,W a n F a n gD a t a b a s e,V I P,a n d C B M.T h es e a r c h p e r i o d w a sf r o m t h e e s t a b l i s h m e n t o f t h e d a t a b a s e t oD e c e m b e r2022.T h eN e w c a s t l e-O t t a w a S c a l e(N O S)w a s u s e d t o e v a l u a t e t h e q u a l i t y o f t h e l i t e r a t u r e. S t a t a17s t a t i s t i c a l s o f t w a r ew a su s e dt o p e r f o r m M e t a-a n a l y s i so f t h ed a t a.R e s u l t s:At o t a lo f14a r t i c l e sw e r e i n c l u d e d,i n v o l v i n g 6312p a t i e n t s,i n c l u d i n g934p a t i e n t sw i t hd e l a y e dr e c o v e r y.M e t a-a n a l y s i s s h o w e d t h a t t h e i n c i d e n c eo f d e l a y e dr e c o v e r y i n p a t i e n t s u n d e r g o i n gg e n e r a l a n e s t h e s i aw a s18%.I n t r a o p e r a t i v e f l u i d i n t a k e(O R=5.19,95%C I(2.30,11.72),P<0.0001),p r o p o f o l d o s a g e (O R=5.21,95%C I3.08-8.82,P<0.0001),h y p o t h e r m i a(O R=2.80,95%C I1.41-5.58,P=0.003),i n t r a o p e r a t i v eb l o o d t r a n s f u s i o nȡ500m L(O R=2.58,95%C I1.50-4.43,P=0.001),h i s t o r y o f a l c o h o l c o n s u m p t i o n(O R=1.94,95%C I1.35-2.78,P<0.0001),a g eȡ60y e a r s(O R=1.99,95%C I1.51-2.62,P<0.0001),l o n g o p e r a t i o nt i m e(O R=1.91,95%C I1.46-2.50,P<0.0001),c o m b i n e d i n h a l a t i o no f s e v o f l u r a n e(O R=1.77,95%C I1.02-3.07,P=0.042)w e r er i s kf a c t o r sf o rd e l a y e dr e c o v e r y o f p a t i e n t su n d e r g o i n g g e n e r a l a n e s t h e s i a.C o n c l u s i o n:T h e e x i s t i n g e v i d e n c e s h o w s t h a t d e l a y e dr e c o v e r y o f p a t i e n t su n d e r g e n e r a l a n e s t h e s i a i n v o l v e sm a n y a s p e c t s,s u c ha ss e l f-f a c t o r sa n ds u r g i c a l f a c t o r s.I nc l i n i c a lw o r k,i t i sn e c e s s a r y t oi d e n t i f y e a r l y a n dt a k et a r g e t e di n t e r v e n t i o n m e a s u r e s t o r e d u c e t h e i n c i d e n c e o f d e l a y e d r e c o v e r y a n da v o i d p o o r p r o g n o s i s.K e y w o r d s a n a e s t h e s i a;d e l a y e d r e c o v e r y;r i s k f a c t o r s;M e t a-a n a l y s i s;e v i d e n c e-b a s e dn u r s i n g摘要目的:探讨全身麻醉手术病人苏醒延迟发生率及危险因素㊂方法:计算机检索P u b M e d㊁E M b a s e㊁S c i e n c e D i r e c t㊁E B S C O㊁W e b o f S c i e n c e㊁中国知网㊁万方数据库㊁维普数据库㊁中国生物医学文献数据库有关全身麻醉手术病人苏醒延迟危险因素的文献,检索时限均从建库至2022年12月,使用纽卡斯尔-渥太华量表(N O S)评价文献质量㊂采用S t a t a17统计学软件进行M e t a分析㊂结果:最终纳入14篇文献,涉及6312例病人,其中苏醒延迟病人934例㊂M e t a分析结果显示,全身麻醉手术病人苏醒延迟发生率为18%㊂术中液体入量[O R=5.19,95%C I(2.30,11.72),P<0.0001]㊁丙泊酚用量[O R=5.21,95%C I(3.08,8.82),P<0.0001]㊁低体温[O R=2.80,95%C I(1.41,5.58),P=0.003]㊁术中输血量ȡ500m L[O R=2.58,95%C I(1.50,4.43),P=0.001]㊁有饮酒史[O R=1.94,95%C I(1.35,2.78),P<0.0001]㊁年龄ȡ60岁[O R=1.99,95%C I(1.51,2.62),P<0.0001]㊁手术时间长[O R=1.91,95%C I(1.46,2.50), P<0.0001]㊁术中联合吸入七氟醚[O R=1.77,95%C I(1.02,3.07),P=0.042]是全身麻醉手术病人苏醒延迟的危险因素㊂结论:现有证据表明,全身麻醉手术病人苏醒延迟涉及自身因素和手术因素等多个方面,在临床工作中,应早期识别,并采取针对性干预措施来降低苏醒延迟的发生率,避免预后不良㊂关键词全身麻醉;苏醒延迟;危险因素;M e t a分析;循证护理d o i:10.12102/j.i s s n.2095-8668.2023.22.006全身麻醉手术病人在全身麻醉药物停止后,在规定时间内,排除脑血管意外等情况,病人意识仍未完全恢复,且无法对外界刺激㊁言语指令做出正确应答称为苏醒延迟(d e l a y e dr e c o v e r y,D R)[1],是苏醒期常见不良事件之一㊂苏醒延迟可导致机体功能恢复减缓,加重身心应激反应,降低病人苏醒期质量,滞留麻醉后入住监护室时间延长,导致病人精神及家庭经济负担加重[2],增加了医疗纠纷发生率㊂有研究表明,苏醒延迟会造成严重的代谢性脑病和神经损伤[3]㊂因此,尽早作者简介熊浪宇,护士,硕士研究生在读*通讯作者曹学华,E-m a i l:1252668204@q q.c o m引用信息熊浪宇,曹学华,王晓霞,等.全身麻醉手术病人苏醒延迟危险因素的M e t a分析[J].循证护理,2023,9(22):4025-4030.发现全身麻醉病人麻醉苏醒延迟的危险因素,并及时制定相应干预措施,是降低病人术后麻醉苏醒延迟发生率的关键,同时可保护病人脑神经功能[4]㊂为从根本减少苏醒延迟的发生,多项研究对苏醒延迟的影响因素进行了探讨,但结果尚未统一㊂目前,国内外关于此方面的M e t a分析及系统评价较少㊂因此,本研究旨在对全身麻醉手术病人苏醒延迟影响因素的相关研究进行M e t a分析,拟进一步明确术后苏醒延迟的影响因素,从而更有效地预防苏醒延迟㊂1资料与方法1.1文献检索计算机检索P u b M e d㊁E M b a s e㊁S c i e n c e D i r e c t㊁E B S C O㊁W e bo f S c i e n c e㊁中国知网(C N K I)㊁万方数据库(W a n F a n g D a t a b a s e)㊁维普数据库(V I P)㊁中国生物㊃5204㊃循证护理2023年11月第9卷第22期(总第114期)医学文献数据库(C B M),搜集有关全身麻醉手术病人苏醒延迟危险因素的文献,检索时限均从建库至2022年12月㊂中文检索词为苏醒延迟㊁异常苏醒㊁影响因素㊁相关因素㊁有关因素㊁危险因素㊁现状㊁原因等;英文检索词为d e l a y e d e m e r g e n c e f r o ma n e s t h e s i a㊁d e l a y e d e m e r g e n c e㊁d e l a y e dr e c o v e r y㊁i n a d e q u a t ee m e r g e n c e㊁d e l a y e da w a k e n i n g㊁i n f l u e n c i n g f a c t o r s㊁r e l a t e df a c t o r s㊁r i s k f a c t o r s㊁d a n g e r o u s f a c t o r s㊁s i t u a t i o n㊁r e a s o n s等㊂采用主题词与自由词结合的方式进行检索㊂以P u b M e d为例,具体检索策略如下㊂#1"d e l a y e d e m e r g e n c e f r o ma n e s t h e s i a"[M e S H T e r m s] #2"r i s k f a c t o r s"[M e S H T e r m s]#3"d e l a y e d e m e r g e n c e f r o m a n e s t h e s i a"[M e S H T e r m s]A N D"r i s k f a c t o r s"[M e S H T e r m s]1.2文献纳入与排除标准1.2.1纳入标准1)研究类型:病例对照研究㊁队列研究;2)研究对象:进行全身麻醉手术的病人,年龄ȡ18岁;3)研究内容:全身麻醉术后苏醒延迟的危险因素或预测因素;4)研究涉及的样本量ȡ100例;5)原始文献采用多因素L o g i s t i c回归分析,文献提供苏醒延迟危险因素的比值比(o d d sr a t i o,O R)及其95%置信区间(c o n f i d e n c e i n t e r v a l,C I),或经计算可获得O R值及其95%C I;6)语言为中文或英文;7)研究结果至少包含1项危险因素㊂1.2.2排除标准1)无全文或原始数据不完整,不能提取O R值及95%C I或不能实现转化者;2)重复报道的文献;3)质量较差[纽卡斯尔-渥太华量表(t h eN e w c a s t l e-O t t a w a S c a l e,N O S)评分<6分㊁明显统计学错误]的文献㊂1.3文献筛选和资料提取2名相关研究员分别独立采用E n d N o t e软件进行筛选文献并提取指标数据㊂初筛:首先使用E n d N o t e软件去除重复文献,再通过浏览标题和摘要筛除与研究不相关的文献㊂复筛:阅读全文后,筛选出最终符合标准的文献,必要时请第3方决定是否纳入有不同意见的文献㊂文献提取资料主要包括作者㊁研究年份㊁样本量㊁发生苏醒延迟病人例数㊁苏醒延迟发生率㊁危险因素等㊂1.4文献质量评价由2名研究者独立采用N O S评价纳入研究的偏倚风险[5],N O S包括评估研究对象的选择㊁组间可比性㊁暴露因素测量等方面,满分为9分,ȡ6分为较高质量文献㊂1.5统计学方法采用S t a t a17统计学软件对数据进行分析㊂二分类数据采用O R值为效应指标,连续型变量采用均方差(m e a nd i f f e r e n c e,M D)为效应指标㊂采用I2对纳入文献进行异质性检验,I2ɤ50%且Pȡ0.1,表明各研究间异质性可接受,选择固定效应模型进行M e t a 分析;I2>50%且P<0.1,表明各研究间异质性较大,选择随机效应模型进行M e t a分析,并进行亚组分析寻找异质性来源㊂敏感性分析采用逐一剔除单个文献的方法比较结果是否稳定㊂检验水准α=0.05㊂2结果2.1文献检索结果经检索共获得相关文献593篇,经逐层筛选后,最终纳入14篇[6-19]文献,其中3篇英文文献,11篇中文文献,文献筛选流程及结果见图1㊂图1文献筛选流程及结果2.2纳入研究的基本特征及方法学质量评价共纳入14篇[6-19]文献,涉及6312例病人,其中发㊃6204㊃C H I N E S EE V I D E N C E-B A S E D N U R S I N G N o v e m b e r,2023V o l.9N o.22生苏醒延迟934例,纳入研究的基本特征及方法学质量评价见表1㊂表1 纳入研究的基本特征与方法学质量评价纳入研究研究类型苏醒延迟标准(m i n )样本量(例)发生苏醒延迟(例)苏醒延迟发生率(%)危险因素N O S 评分(分)曹雁等[6]2022病例对照研究>9060020033①②③7李飞红等[7]2022病例对照研究1602214①②③④⑤⑥⑦6何翠茹等[8]2022病例对照研究>1201002323①②③⑤⑥⑦6黄玲等[9]2006病例对照研究>12038810828①②7沈晓瑜等[10]2019病例对照研究>1204265513①②④⑧6李想[11]2017病例对照研究>903095819②⑤⑥⑦⑧⑨⑩ 6李映云等[12]2021病例对照研究>903276119②⑤⑦⑧⑨⑩ 7宋辛叶等[13]2018病例对照研究>7206376610①②③⑤7赵岩等[14]2021病例对照研究>9021410750①7王幸芝等[15]2022病例对照研究>90292238①②③④⑧6朱森[16]2020病例对照研究>901603522⑦6C h e n 等[17]2021病例对照研究>7207567410①②⑤6R a d t k e 等[18]2010队列研究 1775603①7Z h a n g 等[19]2021病例对照研究>1201684225①②④⑧⑨⑩7注:①为手术时间;②为年龄;③为低体温;④为术中联合吸入七氟醚;⑤为术中输血;⑥为丙泊酚使用量;⑦为术中液体入量;⑧为麻醉时间;⑨为饮酒史;⑩为吸烟史;为贫血㊂2.3 M e t a 分析结果2.3.1 全身麻醉手术病人苏醒延迟发生率14篇[6-19]文献均报道了全身麻醉手术病人苏醒延迟发生率,为3%~50%,各研究间异质性较大(I 2=98.02%,P <0.001),采用随机效应模型进行M e t a 分析,合并后苏醒延迟发生率为18%[95%C I (12%,26%)],见图2㊂图2 全身麻醉手术病人苏醒延迟发生率的M e t a 分析森林图㊃7204㊃循证护理2023年11月第9卷第22期(总第114期)2.3.2 全身麻醉手术病人苏醒延迟发生率亚组分析共12篇文献[6,8-17,19]提及了苏醒延迟诊断标准,以苏醒延迟诊断标准为>90m i n ㊁>120m i n 和>720m i n 为亚组进行分析㊂M e t a 分析结果显示,苏醒延迟发生率分别为24%[95%C I (14%,36%)],22%[95%C I (14%,31%)],10%[95%C I (9%,12%)]㊂全身麻醉手术病人苏醒延迟发生率亚组分析结果见表2㊂表2 全身麻醉手术病人苏醒延迟发生率亚组分析分组纳入文献数(篇) 异质性检验I 2值(%)P 效应模型 M e t a 分析结果发生率95%C IP>90m i n 6[6,11-12,14-16]96.87<0.001随机0.24[0.14,0.36]<0.001>120m i n 4[8-10,19]90.49<0.001随机0.22[0.14,0.31]<0.001>720m i n2[13,17]0.000.79固定0.10[0.09,0.12]<0.0012.3.3 全身麻醉手术病人苏醒延迟的危险因素M e t a 分析结果显示,年龄ȡ60岁㊁手术时间长㊁低体温㊁术中联合吸入七氟醚㊁术中输血量ȡ500m L ㊁术中液体入量㊁有饮酒史㊁丙泊酚用量是全身麻醉手术病人苏醒延迟的危险因素;麻醉时间㊁吸烟史和贫血尚不能认为是全身麻醉手术病人苏醒延迟的危险因素,见表3㊂表3 全身麻醉手术病人苏醒延迟危险因素的M e t a 分析结果研究因素纳入文献数(篇) 异质性检验I 2值(%)P 效应模型 M e t a 分析结果 O R 值95%C IP年龄ȡ60岁11[6-13,15,17,19]76.3<0.0001随机1.99[1.51,2.62]<0.0001手术时间11[6-10,13-15,17-19]88.9<0.0001随机1.91[1.46,2.50]<0.0001低体温5[6-8,13,15]71.90.007随机2.80[1.41,5.58]0.003术中联合吸入七氟醚4[7,10,15,19]87.2<0.0001随机1.77[1.02,3.07]0.042术中输血量ȡ500m L 6[7-8,11-13,17]61.30.024随机2.58[1.50,4.43]0.001术中液体入量5[7-8,11-12,16]68.10.014随机5.19[2.30,11.72]<0.0001麻醉时间5[10-12,15,19]53.60.071随机1.29[1.00,1.67]0.050吸烟史3[11-12,19]65.50.055随机1.56[0.94,2.61]0.086饮酒史3[11-12,19]0.00.888固定1.94[1.35,2.78]<0.0001贫血3[10-12]0.10.368固定1.37[0.98,1.92]0.063丙泊酚用量3[7-8,11]0.00.520固定5.21[3.08,8.82]<0.00012.4 敏感性分析本研究采用逐一剔除纳入研究进行敏感性分析,结果显示未发生明显变化,结果具有稳定性,见图3㊂图3 敏感性分析结果㊃8204㊃C H I N E S EE V I D E N C E -B A S E D N U R S I N G N o v e m b e r ,2023V o l .9N o .223讨论3.1苏醒延迟的影响因素3.1.1病人自身因素1)年龄ȡ60岁:老年病人肾血流量㊁肾小球滤过率㊁血浆蛋白结合率均有不同程度的降低[20],药代动力学特征及对麻醉药物的反应发生改变,游离药物浓度升高,不能及时代谢;同时随着中枢系统调节功能的下降,老年病人兴奋类与抑制类2种神经递质之间的平衡受到影响,对麻醉药物异常敏感[21]㊂因此,在同等条件下,老年病人的麻醉药物使用量应低于年轻病人㊂2)有饮酒史:由于乙醇在肝细胞内转换为有明显毒性作用的乙醛,能间接或直接引起肝细胞变性及纤维化,故认为饮酒后肝功能受损的病人难以正常降解麻醉药物,从而发生苏醒延迟[22]㊂3.1.2手术麻醉因素1)手术时间长:苏醒延迟可能与手术时间较长有关,手术时间通过间接反映麻醉药物体内的累积量,被研究证实是术后苏醒延迟的危险因素,但对具体的手术时长节点暂无统一定论[23]㊂与此同时较长的手术时间影响术后评价,不利于病人康复㊂2)低体温:正常的体温是机体维持正常代谢的必要前提,当核心体温低于33ħ时将延缓血液中麻醉药物代谢,使病人麻醉苏醒时间减慢[24],影响病人体温的因素包括手术室环境温度㊁术野暴露㊁输注冷液体等均可导致苏醒延迟发生,增加在麻醉复苏室滞留时间㊂3)术中联合吸入七氟醚:本研究结果显示,静吸复合麻醉与病人发生苏醒延迟成正比,与纳入研究[7,15,19]的结果一致,但与沈晓瑜等[10]结果不符,可能与其手术方式为单纯胸科手术有关㊂4)术中输血量ȡ500m L及术中液体入量:术中输血的病人会增加脑组织低灌注和栓塞的发生率,易出现血流动力学紊乱,进而导致脑损伤,大量补液导致机体内电解质紊乱,同时液体温度低促使病人体温下降,两者均明显加大术后苏醒延迟的概率㊂5)丙泊酚用量:林培容等[25]研究显示,大剂量使用丙泊酚会导致丙泊酚输注综合征,即代谢性酸中毒㊁肌肉损伤㊁肝脏脂肪浸润㊁心力衰竭,甚至引起严重高钾血症和肾衰竭导致病人死亡,而麻醉药物过量可分为相对过量与绝对过量,苏醒延迟与麻醉药相对用量过大㊁总剂量过大以及单位时间内用量过大有关[26],与本M e t a分析结果一致㊂3.1.3其他相关因素国内外研究还报道了其他相关因素,如高血压[13,27]㊁糖尿病[12]㊁肺部通气功能障碍㊁肝肾功能障碍[9]以及体质指数(B M I),但由于相关报道较少无法合并,需继续研究㊂B M I对于全身麻醉病人造成苏醒延迟的风险还存在争议,在外科手术中存在肥胖悖论现象,肥胖可能成为某些术后并发症的保护因素[28-29],但目前具体机制尚不明确;与之相反,Z h a n g 等[19]却认为B M Iȡ25k g/m2的病人发生苏醒延迟的风险明显高于B M I正常的病人,因为B M I较高的病人麻醉药物的总剂量增加,同时自身代谢较慢[30],影响病人苏醒时间㊂对于以上因素还需进行更多的研究证实是否与苏醒延迟发生有关㊂因此,术前医护人员应针对病人饮酒史㊁肝肾病史进行全方位了解,根据病人情况酌情使用麻醉药物㊂术中及术后避免过量补液及输血,通过高质量麻醉管理工作,避免电解质紊乱,保持血流动力学稳定及呼吸道通畅,并根据苏醒延迟因素给予针对性治疗㊂麻醉及手术全过程注意保暖,预防低温,可应用保温毯㊁调节室温及调节输注液体温度等措施进行保温㊂在围术期的各个环节进行精准评估,对于完成高质量麻醉管理尤为重要㊂3.2本研究的局限性本研究存在一定的局限性㊂1)本研究纳入文献对于苏醒延迟的界定诊断标准有差异,导致部分合并结果异质性较大;2)由于部分因素信息缺失无法合并,导致研究结果可能存在一定偏差;3)本研究纳入的文献多为病例对照试验,无法避免各种偏倚㊂4小结综上所述,年龄ȡ60岁㊁手术时间㊁低体温㊁术中联合吸入七氟醚㊁术中液体入量㊁术中输血ȡ500m L㊁有饮酒史㊁丙泊酚用量是全身麻醉手术病人苏醒延迟的危险因素㊂因此,对于全身麻醉手术病人需要重视相关因素,并采取相应的干预措施,以期避免术后苏醒延迟,提升术后康复质量㊂参考文献:[1]庄心良.现代麻醉学[M].3版.北京:人民卫生出版社,2003:1.[2] T H OMA S E,MA R T I N F,P O L L A R D B.D e l a y e d r e c o v e r y o fc o n s c i o u s n e s s a f t e r g e n e r a l a n a e s t h e s i a[J].B J A Ed u c a t i o n,2020,20(5):173-179.[3]李海朝,李晨辉.全麻术后意识恢复障碍病人治疗程序[J].中国实用神经疾病杂志,2007,10(1):115-116.[4]N A K A D A T E Y,F U K A S AWA E,I 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