2SC2630中文资料
2SC6082;中文规格书,Datasheet资料
No. A0279-1/7Applications • High-speed switching applications (switching regulator, driver circuit)Features• Adoption of MBIT process•Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switchingSpeci fi cationsAbsolute Maximum Ratingsat Ta=25°CParameterSymbol ConditionsRatingsUnit Collector-to-Base Voltage V CBO60V Collector-to-Emitter Voltage V CES 60V V CEO 50V Emitter-to-Base Voltage V EBO 6V Collector Current I C 15A Collector Current (Pulse)I CP PW ≤10μs, duty cycle ≤1%20A Base Current I B 3A Collector Dissipation P C 2W Tc=25°C23W Junction Temperature Tj 150°C Storage TemperatureTstg--55 to +150°CPackage Dimensionsunit : mm (typ)7529-00260612 TKIM/12512 TKIM TC-00002709/72606/31506FA MSIM TB-000020892SC6082NPN Epitaxial Planar Silicon Transistor50V / 15A High-Speed Switching ApplicationsProduct & Package Information• Package : TO-220F-3SG • JEITA, JEDEC : SC-67• Minimum Packing Quantity : 50 pcs./magazineMarkingElectrical ConnectionC6082LOT No.Electrical Characteristicsat Ta=25°CParameterSymbol ConditionsRatingsUnit mintypmaxCollector Cutoff Current I CBO V CB =40V , I E =0A 10μA Emitter Cutoff Current I EBO V EB =4V , I C =0A 10μADC Current Gain h FE 1V CE =2V , I C =330mA 200560h FE 2V CE =2V , I C =10A 50Gain-Bandwidth Product f T V CE =10V , I C=2A195MHz Output CapacitanceCob V CB =10V , f=1MHz 85pF Collector-to-Emitter Saturation Voltage V CE (sat)I C =7.5A, I B =375mA 200400mV Base-to-Emitter Saturation Voltage V BE (sat)I C =7.5A, I B =375mA 1.2V Collector-to-Base Breakdown Voltage V (BR)CBO I C =100μA, I E =0A 60V Collector-to-Emitter Breakdown Voltage V (BR)CES I C =100μA, R BE =0Ω60V V (BR)CEO I C =1mA, R BE =∞50V Emitter-to-Base Breakdown Voltage V (BR)EBO I E =100μA, I C =0A 6V Turn-On Time t on See speci fi ed Test Circuit52ns Storage Time t stg 560ns Fall Timet f37nsSwitching Time Test CircuitOrdering InformationDevicePackage Shippingmemo2SC6082-1ETO-220F-3SG50pcs./magazine Pb FreeCC I C =20I B1= --20I B2=5APW=20μsD.C.≤1%Collector-to-Emitter V oltage, V CE -- VC o l l e c t o r C u r r e n t , I C -- ACollector-to-Emitter V oltage, V CE -- VC o l l e c t o r C u r r e n t , I C -- AIT10574IT105751001000100.010.11.0100.010.11.010100100010100100010100100010Collector Current, I C -- AD C C u r r e n t G a i n , h F ECollector Current, I C-- AD C C u r r e n t G a i n , h F EBase-to-Emitter V oltage, V BE -- VC o l l e c t o r C u r r e n t , I C -- ACollector-to-Base V oltage, V CB -- VO u t p u t C a p a c i t a n c e , C o b -- p FCollector Current, I C -- AC o l l e c t o r -t o -E m i t t e r S a t u r a t i o n V o l t a g e , V C E (s a t ) -- VG a i n -B a n d w i d t h P r o d u c t , f T -- M H zCollector Current, I C -- AIT10576IT10577IT10578IT10581IT105800.10.01IT10579C o l l e c t o r -t o -E m i t t e r S a t u r a t i o n V o l t a g e , V C E (s a t ) -- VCollector Current, I C -- ACollector Current, I C -- AB a s e -t o -E m i t t e r S a t u r a t i o n V o l t a g e , V B E (s a t ) -- VIT10582321.02375IT105830.10.01Collector-to-Emitter V oltage, V CE -- VC o l l e c t o r C u r r e n t , I C -- AAmbient Temperature, Ta -- °CC o l l e c t o rD i s s i p a t i o n , P C -- WCase Temperature, Tc -- °CC o l l e c t o rD i s s i p a t i o n , P C -- WIT167110.010.11.010100IT16709IT16710Magazine Specifi cation 2SC6082-1EOutline Drawing2SC6082-1EMass (g)Unit1.8mm* For referenceThis catalog provides information as of June, 2012. Specifi cations and information herein are subject to change without notice.分销商库存信息: ONSEMI2SC6082。
电子电气必备常识
2SC1260 电特性- 参数名称: 2SC1260材料: Si结构: npn最大耗散功率(Pc): 250mW集电极-- 基极击穿电压(Ucb): 45V 集电极-- 发射极击穿电压(Uce): 25V 发射极-- 基极击穿电压(Ueb): 4V最大集电极电流(Ic max): 30mA最高结温 2SC1260 (Tj): 175�C特征频率(ft): 1.5GHz集电极电容(Cc), Pf: 1.4直流电流增益(hFE), min/max: 80T制造商: NEC1.共射极电路当信号与基极偏压同相时，基极电位升高，使基极电流增大，集电极电位降低，集电极负载电流会比基极电流增大量成倍增大；当信号与基极偏压反相时，基极电位降低，使基极电流减小，集电极电位升高，集电极负载电流会比基极电流减小量成倍减小。
集电极电流变化量与三极管放大倍数有关。
共射极电路集电极电位变化方向与基极电位变化方向相反，因此也叫反相器。
信号电流不是直接穿过三极管，只能在基极回路流通，在集电极回路可得到放大的电流信号，这两个回路的公共点是发射极，因此又叫共发射极电路。
共射极电路又称反相放大电路，其特点为电压增益大，输出电压与输入电压反相，低频性能差，适用于低频、和多级放大电路的中间级。
2．共集电极电路共集电极电路又称射极输出器、电压跟随器，其特点是：电压增益小于1而又近似等于1，输出电压与输入电压同相，输入电阻高，输出电阻低，常用于多级放大电路的输入级、输出级或缓冲级。
3 ．共基极电路电路特点：输出电压与输入电压同相，输入电阻底，输出电阻高，常用于高频或宽频带电路。
4．反馈是将输出信号的一部分或全部以通过反馈网络送到输入端。
负反馈放大电路有四种不同类型,由瞬时极性判断反馈的性质，由输出端判别电压或电流反馈，由输入端判别串联或并联反馈。
去耦电容在电子电路中，去耦电容和旁路电容都是起到抗干扰的作用，电容所处的位置不同，称呼就不一样了。
2SC4250中文资料(toshiba)中文数据手册「EasyDatasheet - 矽搜」
反向传输电容 过渡频率 转换增益 噪声系数
(Ta = 25°C)
符号
测试条件
ICBO IEBO V (BR) CEO hFE Cre
fT Gce NF
VCB = 25 V, I E = 0 VEB = 3 V, I C = 0 IC = 1毫安,我B = 0 VCE = 10 V, I C = 5毫安 VCB = 10 V, I E = 0, f = 1兆赫 VCE = 10 V, I C = 5毫安 VCC = 12 V, f = 200兆赫,女 L = 260兆赫 （图1）
• 请联系您的东芝销售代表了解详细信息,以环境问题,如产品的RoHS指令的兼容性. 请遵守产品使用与规范纳入或使用受控物质,包括但不限于,欧盟RoHS指令的所有适用的法律和法规.东芝对发生违规作为适用的法律和法规而导致的损害 或损失不承担任何责任.
5
2007-11-01
• 东芝公司及其子公司和附属公司（统称为“TOSHIBA”）,保留这份文件中更改信息的权利,以及相关的硬件,软件和系统（统称为“产品”）,恕不另行通 知.
• 本文档以及任何信息均不得转载未经东芝事先书面许可.即使 东芝的书面许可,复制是允许的,只要在没有任何改动/遗漏.
• 虽然东芝的作品不断地提高产品的质量和可靠性,产品会发生故障或失败.客户 负责符合安全标准和用于提供充分的设计和保障其硬件,软件和 这最大限度地降低风险,并避免出现在产品的故障或失效可能导致生命丧失,身体系统 人身伤害或财产损失,包括数据丢失或损坏.在创作和制作的设计和使用,客户必须 也指,符合（一）中的所有相关信息,东芝的最新版本,包括但不限于本文件, 规格,数据表和应用笔记产品的注意事项和条件中规定的“TOSHIBA 半导体可靠性手册“和（b）对于该产品将与或使用的应用程序的说明.客户全权负责自己的产品设计或应用程序的各个方面,包括但不限于：（a）确定 的利用这样的设计或应用该产品的适当性; （b）评价和确定本文档中包含的任何信息的适用性,或图表,图表,程序,算法,示例应用电路,或 任何其他引用文件; （三）验证这样的设计和应用的所有运行参数.
2SC5570资料
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE2SC5570HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTIONDISPLAY, COLOR TVHIGH SPEED SWITCHING APPLICATIONSz High Voltage: V CBO = 1700 Vz Low Saturation Voltage: V CE (sat) = 3 V (Max.) z High Speed: t f (2) = 0.1 μs (Typ.)ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)CHARACTERISTIC SYMBOL RATING UNITCollector −Base Voltage V CBO 1700 V Collector −Emitter Voltage V CEO 800 V Emitter −Base Voltage V EBO5 V DC I C 28 Collector Current PulseI CP 56ABase CurrentI B 14 A Collector Power Dissipation P C 220 W Junction Temperature T j 150 °C Storage Temperature RangeT stg−55~150 °CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and thesignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Unit: mmJEDEC ― JEITA―TOSHIBA 2-21F2A Weight: 9.75 g (typ.)ELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNITCollector Cut −off Current I CBO V CB = 1700 V, I E = 0 ―― 1 mA Emitter Cut −off CurrentI EBO V EB = 5 V, I C = 0 ― ― 100μAEmitter −Base Breakdown VoltageV (BR) CEO I C = 10 mA, I B = 0 800 ―― Vh FE (1)V CE = 5 V, I C = 2 A 22 ― 48 h FE (2) V CE = 5 V, I C = 8 A 12.5 ― 25 DC Current Gainh FE (3)V CE = 5 V, I C = 22 A 4.5 ― 7.5 ― Collector −Emitter Saturation Voltage V CE (sat) I C = 22 A, I B = 5.5 A ―― 3 VBase −Emitter Saturation Voltage V BE (sat) I C = 22 A, I B = 5.5 A ― 1.0 1.5 V Transition Frequency f T V CE = 10 V, I C = 0.1 A ― 2 ― MHz Collector Output CapacitanceC ob V CB = 10 V, I E = 0, f = 1 MHz ― 470 ― pF Storage Timet stg (1) ― 2.6 3.0Fall Time t f (1) I CP = 10 A, I B1 (end) = 1.4 Af H = 64 kHz― 0.2 0.3 μsStorage Time t stg (2) ― 1.4 1.6Switching TimeFall Timet f (2)I CP = 8 A, I B1 (end) = 1.2 A f H = 130 kHz― 0.10 0.15μsMarkinglead (Pb)-free finish.RESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。
2SC2632中文资料
hFE — IC
600 VCE=10V 300
fT — I E
Collector output capacitance Cob (pF)
VCB=10V f=100MHz Ta=25˚C 5
Cob — VCB
IE=0 f=1MHz Ta=25˚C 4
Forward current transfer ratio hFE
R 130 ~ 220 S 185 ~ 330 hFE
Rank
1
元器件交易网
Transistor
PC — Ta
1.2 120 VCE=10V 25˚C
2SC2632
IC — VBE
Collector to emitter saturation voltage VCE(sat) (V)
(Ta=25˚C)
Ratings 150 150 5 100 50 1 150 –55 ~ +150 Unit V V V mA mA W ˚C ˚C
0.45–0.1 1.27 1.27
+0.2
13.5±0.5
0.7–0.2
+0.3
Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob.
(Ta=25˚C)
Symbol ICBO VCEO VEBO hFE fT Cob NV
*
Conditions VCB = 100V, IE = 0 IC = 0.1mA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 10mA IC = 30mA, IB = 3mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT
2SC3306中文资料(Inchange Semiconductor)中文数据手册「EasyDatasheet - 矽搜」
VCEsat VBEsat
集电极 - 发射极饱和电压
基地发射极饱和电压
ICBO I EBO hFE
开关时间
集电极截止电流 发射极截止电流
DC电流增益
tr
上升时间
t stg
贮存时间
tf
下降时间
产品规格
2SC3306
条件
IC=10毫安,I B=0 IC= 1mA时E,I=0 IE= 1mA时,CI=0 IC=5A; I B=0.5A IC=5A; I B=0.5A VCB=400V; I E=0 VEB=7V; I C=0 IC=5A ; V CE=5V
TC=25℃
VALUE
UNIT
500ห้องสมุดไป่ตู้
V
400
V
7
V
10
A
15
A
5
A
100
W
150
℃
-55~150
℃
芯片中文手册,看全文,戳
硅NPN功率晶体管
特性 除非另有说明 TJ = 25℃
符号
参数
V(BR)CEO 集电极 - 发射极击穿电压 V(BR)CBO 集电极基击穿电压 V(BR)EBO 发射基地击穿电压
安装底座 发射器
产品规格
2SC3306
图 1简化外形（ TO-3P（ I））和符号
绝对最大额定值（Ta = 25
℃)
符号
参数
VCBO
集电极基极电压
VCEO
集电极 - 发射极电压
VEBO
发射极基极电压
IC
集电极电流DC
ICM
集电极电流峰值
IB
基极电流
PC
集电极耗散功率
三极管2SC
2SC系列晶体三极管参数及其代换1746--2055[中华家电维修资料网]作者:搜集整理来源:中华家电维修资料网录入:Admin更新时间：2007-12-1411:55:46点击数：2542【字体：】当图片没完全打开时,请点击图片在新窗口中查看型号厂商特性用途集电极最大直流耗散功率Pcm(W)集电极最大允许直流电流Icm(A)集电极-基极击穿电压BVcbo(V)集电极-发射极击穿电压BVceo(V)特征频率ft(Hz)放大倍数代换型号2SC2000 NEC 硅NPN三极管,汽车音频放大0.6 0.2 60 50 70M 40-1603CG180A2SC2001长电硅NPN三极管,TO-920.6 0.7 30 25 50M 90-400 3DA18A2SC2001A NEC 硅NPN三极管,放大0.6 0.7 30 25 50M 90-400 3DA18A2SC2002 NEC 硅NPN三极管,放大0.6 0.3 60 60 140M 30-4003DG130D2SC2003 NEC 硅NPN三极管,放大0.6 0.3 80 80 140M 30-4003DG182F2SC2009 硅NPN三极管0.25 0.1 35 200M 3DK2A2SC2014 硅NPN三极管0.5 0.2 100 100M3DG180I2SC2017 硅NPN三极管100 10 4503DD264A2SC2020 SONY 硅NPN三极管,VHFRF功率放大12 3 45 20 270M 30-150 3DA22A2SC2021ROHM极管,一般小信号放大，配对管2SA937 0.3 0.1 50 40 180M120-8202SC2021L N 硅NPN 三极管,低噪声 0.3 0.15 50 180-5602SC2022硅NPN 三极管 30130010M3DK205F 2SC2023SANKEN 硅NPN 三极管,串联调整，开关，一般放大 40 2 300 300 10M 303DK206F2SC2024硅NPN 三极管 1 1 80 150M 3DK30C2SC2025NEC硅NPN 中功率UHF-VHF 三极管 0.25 0.07 25 12 4.5G 20-2502SC2026NEC 硅NPN 三极管,VHF ，UHF 低噪声放大 0.25 0.05 30 14 2G 25-200 3DG44C2SC2027硅NPN 三极管 50 5 1500 3DA58I2SC2028 FUJI 硅NPN 三极管,高频放大 5 1.5 80 50 250M 90-320 3DA14B 2SC2029硅NPN 三极管 10280 150M 3DK104E 2SC203硅NPN 三极管 0.35 0.2 40 350M3DG130C2SC2034 TOSHIBA硅NPN 三极管,功率放大 12 2 120 90 150M 50-200 2SC2035硅NPN 三极管0.3 0.3 50 350M 3DK29B2SC2036TOSHIB A 资料来自网上118080150M100整理,硅NPN,功率放大2SC2037 NEC 一般NPN晶体管0.25 0.07 25 12 4.5G 20-2502SC2039 硅NPN三极管80 8 70 200M 3DA73B2SC204 硅NPN三极管0.35 0.2 20 350M3DG130C2SC2043 FUJI 硅NPN三极管,功率放大25 8 70 70 220M 20-2002SC2050 FUJI 硅NPN三极管,功率放大13 8 70 70 150M 20-1502SC2053 MIT 硅NPN三极管,VHFRF放大0.6 0.3 40 17 10-1802SC2055 MIT 硅NPN三极管,VHFRF放大0.5 0.3 18 9 1.7G 10-1803DG130A。
2SC2620中文资料
2SC2620Silicon NPN Epitaxial PlanarApplicationVHF amplifier, Local oscillatorOutline2SC26202Absolute Maximum Ratings (Ta = 25°C)ItemSymbol Ratings Unit Collector to base voltage V CBO 30V Collector to emitter voltage V CEO 20V Emitter to base voltage V EBO 4V Collector currentI C 20mA Collector power dissipation P C 100mW Junction temperature Tj 150°C Storage temperatureTstg–55 to +150°CElectrical Characteristics (Ta = 25°C)ItemSymbol Min Typ Max Unit Test conditions Collector to base breakdown voltageV (BR)CBO30——V I C = 10 µA, I E = 0Collector to emitter breakdown voltageV (BR)CEO 20——V I C = 1 mA, R BE = ∞Emitter to base breakdown voltageV (BR)EBO 4——V I E = 10 µA, I C = 0Collector cutoff current I CBO ——0.5µA V CB = 10 V, I C = 0Emitter cutoff current I EBO ——0.5µAV EB = 2 V, I C = 0DC current transfer ratio h FE *160—200V CE = 6 V, I C = 1 mA Collector to emitter saturation voltageV CE(sat)—0.17—V I C = 20 mA, I B = 4 mA Base to emitter voltage V BE —0.72—V V CE = 6 mA, I C = 1 mA Gain bandwidth product f T —940—MHz V CE = 6 V, I C = 5 mA Collector output capacitance Cob—0.9—pF V CB = 10 V, I E = 0, f = 1 MHzNote: 1.The 2SC2620 is grouped by h FE as follows.Grade B C Mark QB QC h FE60 to 120100 to 200See characteristic curves of 2SC535.2SC26203Hitachi CodeJEDECEIAJWeight (reference value)MPAK—Conforms0.011 gUnit: mm元器件交易网Cautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。
2SC2631S资料
100
0 −1
−10
−100
0
1
10
100
Collector current IC (mA)
Emitter current IE (mA)
Collector-base voltage VCB (V)
2
SJC00117BED
Request for your special attention and precautions in using the technical information and semiconductors described in this book
IE = 0 f = 1 MHz Ta = 25°C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
500
250
4
400
200
3
300
Ta = 75°C 25°C −25°C
150
2
200
100
100
50
1
0 0.1
1
10
IC VBE
VCE = 10 V
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
Collector power dissipation PC (W)
Collector current IC (mA)
• Satisfactory linearity of forward current transfer ratio hFE • High collector-emitter voltage (Base open) VCEO • Small collector outputnput open circuited) Cob
HCPL-2630W中文资料
Single-channel: 6N137, HCPL-2601, HCPL-2611 Dual-Channel: HCPL-2630, HCPL-2631 High Speed-10 MBit/s Logic Gate Optocouplers
Features
■ ■ ■ ■ ■ ■ ■ ■
Description
Applications
■ ■ ■ ■ ■ ■ ■ Ground loop elimination LSTTL to TTL, LSTTL or 5-volt CMOS Line receiver, data transmission Data multiplexing Switching power supplies Pulse transformer replacement Computer-peripheral interface
2 Single-channel: 6N137, HCPL-2601, HCPL-2611 Dual-Channel: HCPL-2630, HCPL-2631 Rev. 1.0.3
元器件交易网
Single-channel: 6N137, HCPL-2601, HCPL-2611 Dual-Channel: HCPL-2630, HCPL-2631 High Speed-10 MBit/s Logic Gate Optocouplers
Symbol
TSTG TOPR TSOL
Value
-55 to +125 -40 to +85 260 for 10 sec
Units
°C °C °C
45
Recommended Operating Conditions
2sc9013型晶体管中文资料
基极-发射极导通压降
BVCBO
BVCEO
BVEBO
ICBO
ICEO
HFE1
HFE2
VCE(sat)
VBE(sat)
VBE(on)
Ic=100uA,IE=0
Ic=1mA,IB=0
IE=100uA,IC=0
VCB=25V,IE=0
VEB=3V,IC=0
VCE=1V,IC=50mA
VCE=1V,IC=500mA
IC=500mA,IB=50mA
IC=500Ma,IB=50mA
VCE=1V,IC=10mA
40
20
120
0.16
0.91
0.67
100
100
202
0.6
1.2
0.7
V
V
V
nA
nA
V
V
V
hFE(1)分类
类别
D
E
F
G
H
hFE(1)
64-91
78-112
96-135
112-166
144-202
静态特性图
Ic（mA）
VCE(V)
直流电流增益图
hFE
IC(mA)
基极-发射极，集电极-发射极饱和压降图
VBE,VCE(SAT)(mV)
IC(mA)
直流增益带宽
直流增益带宽（MHz）
IC(mA)
2sc9013npn张萌译允许放大输出为1w无线类推挽式总功耗高pt625mw集电极电流高ic500ma与ss9012互补卓越的hfe线性特性ta25特征名称符号单位集电极基极电压集电极发射极电压发射极基极电压集电极电流集电极耗散储存温度vcbovceoveboicpctjtstg402050062515055150mamata25特性名称符号测试条件单位集电极基极击穿电压集电极发射极击穿电压发射极基极击穿电压集电极截止电流发射极截止电流直流电流增益集电极发射极饱和电压基极发射极饱和电压基极发射极导通压降bvcbobvceobveboicboiceohfe1hfe2vcesatvbesatvbeonic100uaie0ic1maib0ie100uaic0vcb25vie0veb3vic0vce1vic50mavce1vic500maic500maib50maic500maib50mavce1vic10ma4020644006120120016091067100100202061207nanahfe164917811296135112166144202icmavcevhfeicmavbevcesatmvicmamhzicma
2SC系列三极管参数
2SC系列三极管参数2SC系列三极管参数2SC系列三极管参数2SC1000 SI-N 55V 0.1A 0.2W 80MHz2SC1008 SI-N 80V 0.7A 0.8W 75MHz | 2SC1012A SI-N 250V 60mA0.75W >80MHz2SC1014 SI-N 50V 1.5A 7W | 2SC1017 SI-N 75V 1A 60mW 120MHz2SC1030 SI-N 150V 6A 50W | 2SC1046 SI-N 1000V 3A 25W 2SC1047 SI-N 30V 20mA 0.4W 650MHz | 2SC1050 SI-N 300V 1A 40W2SC1051 SI-N 150V 7A 60W 8MHz | 2SC1061 SI-N 50V 3A 25W 8MHz=H1062SC1070 SI-N 30V 20mA 900MHz | 2SC1080 SI-N 110V 12A 100W 4MHz2SC109 SI-N 50V 0.6A 0.6W | 2SC1096 SI-N 40V 3A 10W60MHz2SC1106 SI-N 350V 2A 80W | 2SC1114 SI-N 300V 4A 100W 10MHz2SC1115 SI-N 140V 10A 100W 10MHz | 2SC1116 SI-N 180V 10A 100W 10MHz2SC1161 SI-P 160V 12A 120W | 2SC1162 SI-N 35V 1.5A 10W 180MHz2SC1172 SI-N 1500V 5A 50W | 2SC1195 SI-N 200V 2.5A 100W2SC1213C SI-N 50V 0.5A 0.4W UNI | 2SC1214 SI-N 50V 0.5A 0.6W 50MHz2SC1215 SI-N 30V 50mA 0.4W 1.2GHZ | 2SC1216 SI-N 40V 0.2A0.3W <20/402SC1226 SI-N 40/50V 2A 10W 150MHz | 2SC1238 SI-N 35V 0.15A 5W 1.7GHz2SC1247A SI-N 50V 0.5A 0.4W 60MHz | 2SC1308 SI-N 1500V 7A 50W2SC1312 SI-N 35V 0.1A 0.15W 100MHz | 2SC1318 SI-N 60V 0.5A0.6W 200MHz2SC1343 SI-N 150V 10A 100W 14MHz | 2SC1345 SI-N 55V 0.1A0.1W 230MHz2SC1359 SI-N 30V 30mA 0.4W 250MHz | 2SC1360 SI-N 50V 0.05A 1W >300MHz2SC1362 SI-N 50V 0.2A 0.25W 140MHz | 2SC1368 SI-N 25V 1.5A 8W 180MHz2SC1382 SI-N 80V 0.75A 5W 100MHz | 2SC1384 SI-N 60V 1A 1W 200MHz2SC1393 SI-N 30V 20mA 250 mW 700MHz | 2SC1398 SI-N 70V 2A15W2SC1413A SI-N 1200V 5A 50W | 2SC1419 SI-N 50V 2A 20W 5MHz2SC1426 SI-N 35V 0.2A 2.7GHz | 2SC1431 SI-N 110V 2A 23W 80MHz2SC1432 N-DARL 30V 0.3A 0.3W B=40 | 2SC1439 SI-N 150V 50mA 0.5W 130MHz2SC1445 SI-N 100V 6A 40W 10MHz | 2SC1446 SI-N 300V 0.1A10W 55MHz2SC1447 SI-N 300V 0.15A 20W 80MHz | 2SC1448 SI-N 150V1.5A 25W 3MHz2SC1449 SI-N 40V 2A 5W 60MHz | 2SC1450 SI-N 150V 0.4A 20W2SC1454 SI-N 300V 4A 50W 10MHz | 2SC1474-4 SI-N 20V 2A 0.75W 80MHz2SC1501 SI-N 300V 0.1A 10W 55MHz | 2SC1505 SI-N 300V 0.2A15W2SC1507 SI-N 300V 0.2A 15W 80MHz | 2SC1509 SI-N 80V 0.5A 1W 120MHz2SC1515 SI-N 200V 0.05A 0.2W 110MHz | 2SC1520 SI-N 300V 0.2A 12,5W2SC1545 N-DARL 40V 0.3A 0.3W B=1K | 2SC1567 SI-N 100V 0.5A5W 120MHz2SC1570 SI-N 55V 0.1A 0.2W 100MHz | 2SC1571 SI-N 40V 0.1A0.2W 100MHz2SC1573 SI-N 200V 0.1A 1W 80MHz | 2SC1577 SI-N 500V 8A 80W 7MHz2SC1583 SI-N 50V 0.1A 0.4W 100MHz | 2SC1619 SI-N 100V 6A 50W 10MHz2SC1623 SI-N 60V 0.1A 0.2W 250MHz | 2SC1624 SI-N 120V 1A 15W 30MHz2SC1627 SI-N 80V 0.4A 0.8W 100MHz | 2SC1674 SI-N 30V .02A600MC RF/IF2SC1675 SI-N 50V .03A 0.25W | 2SC1678 SI-N 65V 3A 3W2SC1685 SI-N 60V 0.1A 150MC UNI | 2SC1688 SI-N 50V 30mA0.4W 550MHz2SC1708A SI-N 120V 50mA 0.2W 150MHz | 2SC1729 SI-N 35V 3.5A 16W 500MHz2SC1730 SI-N 30V 0.05A 1.1GHz UHF | 2SC1740 SI-N 40V 100mA 0.3W2SC1741 SI-N 40V 0.5A 0.3W 250MHz | 2SC1756 SI-N 300V0.2A >50MHz2SC1760 SI-N 100V 1A 7.9W 80MHz | 2SC1775A SI-N 120V 0.05A 0.2W UNI2SC1781 SI-N 50V 0.5A 0.35W | 2SC1815 SI-N 50V 0.15A 0.4W 80MHz2SC1815BL SI-N 60V 0.15A 0.4W B>350 | 2SC1815GR SI-N 60V 0.15A 0.4W B>2002SC1815Y SI-N 60V 0.15A 0.4W B>120 | 2SC1827 SI-N 100V 4A 30W 10MHz2SC1832 N-DARL 500V 15A 150W B>10 | 2SC1841 SI-N 120V 0.05A 0.5W2SC1844 SI-N 60V 0.1A 0.5W 100MHz | 2SC1845 SI-N 120V 0.05A 0.5W2SC1846 SI-N 120V 0.05A 0.5W | 2SC1847 SI-N 50V 1.5A 1.2W2SC1855 SI-N 20V 20mA 0.25W 550MHz | 2SC1871 SI-N 450V 15A 150W <1/3us2SC1879 N-DARL+D 120V 2A 0.8W B>1 | 2SC1890 SI-N 90V 0.05A 0.3W 200MHz2SC1895 SI-N 1500V 6A 50W 2MHz | 2SC1906 SI-N 19V 0.05A0.3W2SC1907 SI-N 30V 0.05A 1100MHz | 2SC1913 SI-N 150V 1A 15W 120MHz0.05A 0.6W2SC1922 SI-N 1500V 2.5A 50W | 2SC1923 SI-N 30V 20mA 10mW550MHz2SC1929 SI-N 300V 0.4A 25W 80MHz | 2SC1941 SI-N 160V 50mA 0.8W2SC1944 SI-N 80V 6A PQ=16W | 2SC1945 SI-N 80V 6A 20W 2SC1946A SI-N 35V 7A 50W | 2SC1947 SI-N 35V 1A4W/175MHz2SC1953 SI-N 150V 0.05A 1.2W 70MHz | 2SC1957 SI-N 40V 1A1.8W/27MHz2SC1959 SI-N 30V 0.5A 0.5W 200MHz | 2SC1967 SI-N 35V 2A 8W 470MHz2SC1968 SI-N 35V 5A 3W 470MHz | 2SC1969 SI-N 60V 6A 20W2SC1970 SI-N 40V 0.6A 5W | 2SC1971 SI-N 35V 2A 12.5W2SC1972 SI-N 35V 3.5A 25W | 2SC1975 SI-N 120V 2A 3.8W 50MHz2SC1980 SI-N 120V 20mA 0.25W 200MHz | 2SC1984 SI-N 100V 3A 30W B=7002SC1985 SI-N 80V 6A 40W 10MHz | 2SC2023 SI-N 300V 2A 40W 10MHz2SC2026 SI-N 30V 0.05A 0.25W | 2SC2027 SI-N 1500/800V 5A 50W2SC2036 SI-N 80V 1A PQ=1..4W | 2SC2053 SI-N 40V 0.3A 0.6W 500MHz2SC2055 SI-N 18V 0,3A 0,5W | 2SC2058 SI-N 40V 0.05A 0.25W1A0.75W 120MHz2SC2068 SI-N 300V 0.05A 95MHz | 2SC2073 SI-N 150V 1.5A 25W 4MHz2SC2078 SI-N 80V 3A 10W 150MHz | 2SC2086 SI-N 75V 1A0.45W/27MHz2SC2092 SI-N 75V 3A 5W 27MHz | 2SC2094 SI-N 40V 3.5A PQ>15W 175MHz2SC2097 SI-N 50V 15A PQ=85W | 2SC2120 SI-N 30V 0.8A 0.6W 120MHz2SC2122 SI-N 800V 10A 50W | 2SC2166 SI-N 75V 4A 12.5W RFPOWER2SC2168 SI-N 200V 2A 30W 10MHz | 2SC2200 SI-N 500V 7A 40W1US2SC2209 SI-N 50V 1.5A 10W 150MHz | 2SC2216 SI-N 45V 50mA 0.3W 300MHz2SC2228 SI-N 160V 0.05A 0.75W >50 | 2SC2229 SI-N 200V 50mA 0.8W 120MHz2SC2230 SI-N 200V 0.1A 0.8W 50MHz | 2SC2233 SI-N 200V 4A 40W 8MHz2SC2235 SI-N 120V 0.8A 0.9W 120MHz | 2SC2236 SI-N 30V 1.5A0.9W 120MHz2SC2237 SI-N 35V 2A PQ>7.5W 175MHz | 2SC2238 SI-N 160V 1.5A 25W 100MHz2SC2240 SI-N 120V 50mA .3W 100MHz | 2SC2261 SI-N 180V 8A80W 15MHz2SC2267 SI-N 400/360V 0.1A 0.4W | 2SC2270 SI-N 50V 5A 10W 100MHz2SC2271 SI-N 300V 0.1A 0.9W 50MHz | 2SC2275 SI-N 120V 1.5A25W 200MHz2SC2283 SI-N 38V 0.75A 2.8W(500MHz | 2SC2287 SI-N 38V 1.5A 7.1W 175MHz2SC2295 SI-N 30V 0.03A 0.2W 250MHz | 2SC2307 SI-N 500V 12A 100W 18MHz2SC2308 SI-N 55V 0.1A 0.2W 230MHz | 2SC2310 SI-N 55V 0.1A0.2W 230MHz2SC2312 SI-N 60V 6A 18.5W/27MHz | 2SC2314 SI-N 45V 1A 5W2SC2320 SI-N 50V 0,2A 0,3W | 2SC2329 SI-N 38V 0.75A 2W 175MHz2SC2331 SI-N 150V 2A 15W POWER | 2SC2333 SI-N 500/400V 2A 40W2SC2334 SI-N 150V 7A 40W POWER | 2SC2335 SI-N 500V 7A 40W POWER2SC2336B SI-N 250V 1.5A 25W 95MHz | 2SC2344 SI-N 180V 1.5A 25W 120MHz2SC2347 SI-N 15V 50mA 250mW 650MHz | 2SC2362 SI-N 120V50mA 0.4W 130MHz2SC2363 SI-N 120V 50mA 0.5W 130MHz | 2SC2365 SI-N 600V 6A50W POWER2SC2369 SI-N 25V 70mA 0.25W 4.5GHz | 2SC2383 SI-N 160V 1A2SC2389 SI-N 120V 50mA 0.3W 140MHz | 2SC2407 SI-N 35V 0.15A 0.16W 500MHz2SC2412 SI-N 50V 0.1A 180MHz | 2SC2433 SI-N 120V 30A 150W 80MHz2SC2440 SI-N 450V 5A 40W | 2SC2458 SI-N 50V 0.15A 0.2W 80MHz2SC2466 SI-N 30V 0.05A 2.2GHz | 2SC2482 SI-N 300V 0.1A 0.9W 50MHz2SC2485 SI-N 100V 6A 70W 15MHz | 2SC2486 SI-N 120V 7A 80W 15MHz2SC2491 SI-N 100V 6A 40W 15MHz | 2SC2497 SI-N 70V 1.5A 5W 150MHz2SC2498 SI-N 30V 0.05A 0.3W 3.5GHz | 2SC2508 SI-N 40V 6A 50W 175MHz2SC2510 SI-N 55V 20A 250W(28MHz) | 2SC2512 SI-N 30V 50mA 900MHz TUNE2SC2516 SI-N 150V 5A 30W <0.5/2us | 2SC2517 SI-N 150V 5A 30W <0.5/2us2SC2538 SI-N 40V 0.4A 0.7W | 2SC2539 SI-N 35V 4A 17W175MHz2SC2542 SI-N 450V 5A 40W | 2SC2547 SI-N 120V 0.1A 0.4W 2SC2551 SI-N 300V 0.1A 0.4W 80MHz | 2SC2552 SI-N 500V 2A 20W2SC2553 SI-N 500V 5A 40W 1us | 2SC2562 SI-N 60V 5A 25W0.1us2SC2563 SI-N 120V 8A 80W 90MHz | 2SC2570A SI-N 25V 70mA 0.6W2SC2579 SI-N 160V 8A 80W 20MHz | 2SC2581 SI-N 200V 10A 100W2SC2590 SI-N 120V 0.5A 5W 250MHz | 2SC2592 SI-N 180V1A 20W 250MHz2SC2603 SI-N 50V 0.2A 0.3W | 2SC2610 SI-N 300V 0.1A 0.8W 80MHz2SC2611 SI-N 300V 0.1A 0.8W 80MHz | 2SC2621E SI-N 300V 0.2A 10W >50MHz2SC2625 SI-N 450V 10A 80W | 2SC2630 SI-N 35V 14A 100W 2SC2631 SI-N 150V 50mA 0,75W 160MHz | 2SC2632 SI-N 150V 50mA2SC2634 SI-N 60V 0.1A 0.4W 200MHz | 2SC2653 SI-N 350V 0.2A15W >50MHz2SC2654 SI-N 40V 7A 40W | 2SC2655 SI-N 50V 2A 0.9W 0.1us 2SC2656 SI-N 450V 7A 80W <1.5/4.5 | 2SC2660 SI-N 200V 2A 30W 30MHz2SC2668 SI-N 30V 20mA 0.1W 550MHz | 2SC2671 SI-N 15V 80mA 0.6W 5.5GHz2SC2682 SI-N 180V 0.1A 8W 180MHz | 2SC2690 SI-N 120V 1.2A20W 160MHz2SC2694 SI-N 35V 20A 140W | 2SC2705 SI-N 150V 50mA 0.8W 200MHz2SC2706 SI-N 140V 10A 100W 90MHz | 2SC2712 SI-N 50V 0.15A 0.15W 80MHz2SC2714 SI-N 30V 20mA 0.1W 550MHz | 2SC2717 SI-N 30V 50mA 0.3W 300MHz2SC2724 SI-N 30V 30mA 200MHz | 2SC2749 SI-N 500V 10A 100W 50MHz2SC2750 SI-N 150V 15A 100W POWER | 2SC2751 SI-N 500V 15A 120W 50MHz2SC2752 SI-N 500V 0.5A 10W <1/3.5 | 2SC2753 SI-N 17V0.07A0.3W 5GHz2SC2759 SI-N 30V 50mA 0.2W 2.3GHz | 2SC2786 SI-N 20V 20mA 600MHz2SC2787 SI-N 50V 30mA 0.3W 250MHz | 2SC2791 SI-N 900V 5A 100W2SC2792 SI-N 850V 2A 80W | 2SC2793 SI-N 900V 5A 100W 2SC2802 SI-N 300V 0.2A 10W 80MHz | 2SC2808 SI-N 100V 50mA 0.5W 140MHz2SC2810 SI-N 500V 7A 50W 18MHz | 2SC2812 SI-N 55V 0.15A0.2W 100MHz2SC2814 SI-N 30V 0.03A 320MHz F | 2SC2825 SI-N 80V 6A 70W B>5002SC2837 SI-N 150V 10A 100W 70MHz | 2SC2839 SI-N 20V 30mA 0.15W 320MHz2SC2851 SI-N 36V 0.3A 1W 1.5GHz | 2SC2873 SI-N 50V 2A 0.5W 120MHz2SC2878 SI-N 20V 0.3A 0.4W 30MHz | 2SC2879 SI-N 45V 25A PEP=100W 28MHz2SC2882 SI-N 90V 0.4A 0.5W 100MHz | 2SC288A SI-N 35V 20mA 0.15W2SC2898 SI-N 500V 8A 50W | 2SC2901 SI-N 40V 0.2A 0.6W <12/182SC2908 SI-N 200V 5A 50W 50MHz | 2SC2910 SI-N 160V 70mA 0.9W 150MHz2SC2911 SI-N 180V 140mA 10W 150MHz | 2SC2912 SI-N 200V140mA 10W 150MHz2SC2922 SI-N 180V 17A 200W 50MHz | 2SC2923 SI-N 300V0.1A 140MHz2SC2928 SI-N 1500V 5A 50W | 2SC2939 SI-N 500V 10A 100W 2.5us2SC2958 SI-N 160V 0.5A 1W | 2SC2979 SI-N 800V 3A 40W 2SC2987 SI-N 140V 12A 120W 60MHz | 2SC2988 SI-N 36V 0.5A 175MHz2SC2999 SI-N 20V 30mA 750MHz | 2SC3001 SI-N 20V 3APQ=7W(175MHz)2SC3019 SI-N 35V 0.4A 0.6W 520MHz | 2SC3020 SI-N 35V 1A 10W2SC3022 SI-N 35V 7A 50W | 2SC3026 SI-N 1700V 5A 50W POWER2SC3030 N-DARL 900V 7A 80W | 2SC3039 SI-N 500V 7A 52W 2SC3042 SI-N 500/400V 12A 100W | 2SC3052F SI-N 50V 0.2A0.15W 200MHz2SC3063 SI-N 300V 0.1A 1.2W 140MHz | 2SC3067 2xSI-N 130V50mA 0.5W 1602SC3068 SI-N 30V 0.3A Ueb=15V B>8 | 2SC3071 SI-N 120V 0.2A Ueb=15V B>2SC3073 SI-N 30V 3A 15W 100MHz | 2SC3074 SI-N 60V 5A 20W 120MHz2SC3075 SI-N 500V 0.8A 10W 1/1.5us | 2SC3089 SI-N 800V 7A 80W2SC3101 SI-N 250V 30A 200W 25MHz | 2SC3102 SI-N 35V 18A 170W 520MHz2SC3112 SI-N 50V 0.15A 0.4W 100MHz | 2SC3116 SI-N 180V 0.7A 10W 120MHz2SC3117 SI-N 180V 1.5A 10W 120MHz | 2SC3133 SI-N 60V 6A 1.5W27MHz2SC3148 SI-N 900V 3A 40W 1us | 2SC3150 SI-N 900V 3A 50W 15MHz2SC3153 SI-N 900V 6A 100W | 2SC3157 SI-N 150V 10A 60W 2SC3158 SI-N 500V 7A 60W | 2SC3164 SI-N 500V 10A 100W 2SC3169 SI-N 500V 2A 25W >8MHz | 2SC3175 SI-N 400V 7A 50W 40MHz2SC3178 SI-N 1200V 2A 60W | 2SC3179 SI-N 60V 4A 30W15MHz2SC3180N SI-N 80V 6A 60W 30MHz | 2SC3181N SI-N 120V 8A 80W 30MHz2SC3182N SI-N 140V 10A 100W 30MHz | 2SC3195 SI-N 30V 20mA 0.1W 550MHz2SC3199 SI-N 60V 0.15A 0.2W 130MHz | 2SC3200 SI-N 120V 0.1A 0.3W 100MHz2SC3202 SI-N 35V 0.5A 0.5W 300MHz | 2SC3203 SI-N 35V 0.8A0.6W 120MHz2SC3205 SI-N 30V 2A 1W 120MHz2SC4544参数：Si-NPN 300V 0.1A 8W 70MHz| 2SC3206 SI-N 150V 0.5A 0.8W 120MHz2SC3210 SI-N 500V 10A 100W 1us | 2SC3211 SI-N 800V 5A 70W >3MHz2SC3212 SI-N 800V 7A 3W 3.5MHz | 2SC3225 SI-N 40V 2A 0.9W 1us2SC3231 SI-N 200V 4A 40W 8MHz | 2SC3240 SI-N 50V 25A 110W 30MHz2SC3242 SI-N 20V 2A 0.9W 80MHz | 2SC3244E SI-N 100V 0.5A 0.9W 130MHz2SC3245A SI-N 150V 0.1A 0.9W 200MHz | 2SC3246 SI-N 30V1.5A 0.9W 130MHz2SC3247 SI-N 50V 1A .9W 130MHz B> | 2SC3257 SI-N 250V 10A40W 1/3.5us2SC3258 SI-N 100V 5A 30W 120MHz | 2SC3260 N-DARL 800V 3A 50W B>102SC3262 N-DARL 800V 10A 100W | 2SC3263 SI-N 230V 15A 130W2SC3264 SI-N 230V 17A 200W 60MHz | 2SC3271 SI-N 300V 1A 5W 80MHz2SC3277 SI-N 500V 10A 90W 20MHz | 2SC3279 SI-N 10V 2A 0.75W 150MHz2SC3280 SI-N 160V 12A 120W 30MHz | 2SC3281 SI-N 200V 15A 150W 30MHz2SC3284 SI-N 150V 14A 125W 60MHz | 2SC3293 N-DARL+D 50V 1.2A 20W 1802SC3297 SI-N 30V 3A 15W 100MHz | 2SC3299 SI-N 60V 5A 20W 0.1us2SC3300 SI-N 100V 15A 100W | 2SC3303 SI-N 100V 5A 20W 0.2us2SC3306 SI-N 500V 10A 100W 1us | 2SC3307 SI-N 900V 10A 150W 1us2SC3309 SI-N 500V 2A 20W 1us | 2SC3310 SI-N 500V 5A 30W1us2SC3311 SI-N 60V 0.1A 0.3W 150MHz | 2SC3320 SI-N 500V 15A80W2SC3326 SI-N 20V 0.3A 0.15W 30MHz | 2SC3327 SI-N 50V 0.3A0.2W 30MHz2SC3328 SI-N 80V 2A 0.9W 100MHz | 2SC3330 SI-N 60V 0.2A 0.3W 200MHz2SC3331 SI-N 60V 0.2A 0.5W 200MHz | 2SC3332 SI-N 180V 0.7A 0.7W 120MHz2SC3334 SI-N 250V 50mA 0.9W 100MHz | 2SC3345 SI-N 60V 12A40W 90MHz2SC3346 SI-N 80V 12A 40W 0.2us | 2SC3355 SI-N 20V 0.1A 0.6W 6.5GHz2SC3356 SI-N 20V 0.1A 0.2W 7GHz | 2SC3377 SI-N 40V 1A 0.6W 150MHz2SC3378 SI-N 120V 0.1A 0.2W 100MHz | 2SC3379 SI-N 20V 1.5APQ=3W2SC3381 2xSI-N 80V 0.1A 0.4W 170MHz | 2SC3383 SI-N 60V 0.2A 0.5W 250MHz2SC3397 SI-N 50V 0.1A 250MHz 46K/ | 2SC3399 SI-N 50V 0.1A250MHz2SC3400 SI-N 50V 0.1A 250MHz 22K/ | 2SC3401 SI-N 50V .1A 46K/23KOHM2SC3402 SI-N 50V 0.1A 250MHz 10K/ | 2SC3405 SI-N 900V 0.8A20W 1us2SC3409 SI-N 900V 2A 80W .8uS | 2SC3416 SI-N 200V 0.1A 5W 70MHz2SC3419 SI-N 40V 0.8A 5W 100MHz | 2SC3420 SI-N 50V 5A 10W 100MHz2SC3421O SI-N 120V 1A 1.5W BJT O-G | 2SC3421Y SI-N 120V1A10W 120MHz2SC3422Y SI-N 40V 3A 10W 100MHz | 2SC3423 SI-N 150V 50mA 5W 200MHz2SC3425 SI-N 500V 0.8A 10W | 2SC3446 SI-N 800V 7A 40W 18MHz2SC3447 SI-N 800V 5A 50W 18MHz | 2SC3456 SI-N 1100/800V 1.5A 40W2SC3457 SI-N 1100V 3A 50W | 2SC3460 SI-N 1100V 6A 100W 2SC3461 SI-N 1100/800V 8A 120W | 2SC3466 SI-N 1200/650V 8A 120W2SC3467 SI-N 200V 0.1A 1W 150MHz | 2SC3468 SI-N 300V 0.1A 1W 150MHz2SC3486 SI-N 1500V 6A 120W | 2SC3502 SI-N 200V 0.1A 1.2W2SC3503 SI-N 300V 0.1A 7W 150MHz | 2SC3504 SI-N 70V 0.05A 0.9W 500MHz2SC3505 SI-N 900V 6A 80W | 2SC3507 SI-N 1000/800V 5A 80W2SC3509 N-DARL+D 900V 10A 100W 0. | 2SC3514 SI-N 180V 0.1A 10W 200MHz2SC3518 SI-N 60V 5A 10W | 2SC3520 SI-N 500V 18A 130W 18MHz2SC3526 SI-N 110V 0.15A 7A 30W 1us | 2SC3528 SI-N 500V 20A 125W2SC3549 SI-N 900V 3A 40W | 2SC3552 SI-N 1100V 12A 150W 15MHz2SC3568 SI-N 150V 10A 30W | 2SC3571 SI-N 500V 7A 30W 2SC3577 SI-N 850V 5A 80W 6MHz | 2SC3581 SI-N 55V 0.4A 0.9W 150MHz2SC3591 SI-N 400V 7A 50W | 2SC3595 SI-N 30V 0.5A 5W2SC3596 SI-N 80V 0.3A 8W 700MHz | 2SC3597 SI-N 80V 0.5A 10W 800MHz2SC3599 SI-N 120V 0.3A 8W 500MHz | 2SC3600 SI-N 200V 0.1A 7W 400MHz2SC3601 SI-N 200V 0.15A 7W 400MHz | 2SC3608 SI-N 20V 0.08A 6.5GHz2SC3611 SI-N 50V 0.15A 4W 300MHz | 2SC3616 SI-N 25V 0.7A250MHz2SC3621 SI-N 150V 1.5A 10W 100MHz | 2SC3623 SI-N 60V 0.15A 0.25W B=1K2SC3632 SI-N 600V 1A 10W 30MHz | 2SC3636 SI-N 900/500V 7A 80W2SC3642 SI-N 1200V 6A 100W 200ns | 2SC3655 SI-N 50V 0.1A0.4W 46/23K2SC3656 SI-N 50V 0.1A 0.4W 10K/10 | 2SC3659 SI-N+D 1700/800V 5A 50W2SC3668 SI-N 50V 2A 1W 100MHz | 2SC3669 SI-N 80V 2A 1W 0.2us2SC3675 SI-N 1500/900V 0.1A 10W | 2SC3678 SI-N 900V 3A 80W2SC3679 SI-N 900/800V 5A 100W | 2SC3680 SI-N 900/800V 7A 120W 6MHz2SC3684 SI-N+D 1500V 10A 150W | 2SC3688 SI-N 1500V 10A 150W 0.2us2SC3692 SI-N 100V 7A 30W <300/180 | 2SC373 SI-N 35V 0.1A 0.2W B>2002SC3746 SI-N 80V 5A 20W 100MHz | 2SC3748 SI-N 80V 10A30W 100/600ns2SC3752 SI-N 1100/800V 3A 30W | 2SC3781 SI-N 120V 0.4A 15W 500MHz2SC3782 SI-N 200V 0.2A 15W 400MHz | 2SC3783 SI-N 800V 5A100W2SC3787 SI-N 180V 0.14A 10W 150MHz | 2SC3788 SI-N 200V 0.1A 5W 150MHz2SC3789 SI-N 300V 0.1A 7W 70MHz | 2SC3790 SI-N 300V 0.1A 7W 150MHz2SC3792 SI-N 50V 0.5A 0.5W 250MHz | 2SC3795A SI-N 900V 5A2SC3807 SI-N 30V 2A 15W 260MHz | 2SC3808 N-DARL 80V 2A 170MHz B>802SC380TM SI-N 30V 50mA 0.3W 100MHz | 2SC3811 SI-N 40V 0.1A 0.4W 450MHz2SC3831 SI-N 500V 10A 100W | 2SC3833 SI-N 500/400V 12A 100W2SC3842 SI-N 600V 10A 70W 32MHz | 2SC3844 SI-N 600V 15A75W 30MHz2SC3851 SI-N 80V 4A 25W 15MHz | 2SC3852 SI-N 80V 3A 25W 15MHz2SC3855 SI-N 200V 10A 100W 20MHz | 2SC3857 SI-N 200V 15A 150W 20MHz2SC3858 SI-N 200V 17A 200W 20MHz | 2SC3866 SI-N 900V 3A 40W2SC3868 SI-N 500V 1.5A 25W 0.7us | 2SC3883 SI-N+D 1500V 6A 50W2SC3884A SI-N 1500V 6A 50W | 2SC3886A SI-N 1500V 8A50W 0.1us2SC388A SI-N 25V 50mA 0.3W 300MHz | 2SC3890 SI-N 500V 7A30W 500NS2SC3892A SI-N+D 1500V 7A 50W 0.4us | 2SC3893A SI-N+D 1500V8A 50W2SC3895 SI-N 1500/800V 8A 70W | 2SC3896 SI-N 1500V 8A 70W2SC3897 SI-N 1500V 10A 70W | 2SC3902 SI-N 180V 1.5A 10W 120MHz2SC3907 SI-N 180V 12A 130W 30MHz | 2SC3927 SI-N 900V 10A 120W2SC394 SI-N 25V 0.1A 200MC RF | 2SC3940 SI-N 30V 1A 1W 200MHz2SC3943 SI-N 110V 0.15A 2W 300MHz | 2SC3944 SI-N 150V 1A 40W 300MHz2SC3948 SI-N 850V 10A 75W 20MHz | 2SC3950 SI-N 30V 0.5A 5W2SC3952 SI-N 80V 0.5A 10W 700MHz | 2SC3953 SI-N 120V 0.2A 8W 400MHz2SC3954 SI-N 120V 0.3A 8W 400MHz | 2SC3955 SI-N 200V 0.1A 7W 300MHz2SC3956 SI-N 200V 0.2A 7W 70MHz | 2SC3964 SI-N 40V 2A 1.5W2SC3972 SI-N 800/500V 5A 40W | 2SC3973A SI-N 900V 7A 45W2SC3979A SI-N 800V 3A 2W 10MHz | 2SC3987 N-DARL+D 50V 3A 15W2SC3996 SI-N 1500/800V 15A 180W | 2SC3998 SI-N 1500V25A 250W POWER2SC3999 SI-N 300V 0.1A 0.75W 300MHz | 2SC4004 SI-N 900/800V 1A 30W <1/42SC4020 SI-N 900V 3A 50W 1us | 2SC4024 SI-N 100V 10A 35W B>3002SC4029 SI-N 230V 15A 150W 30MHz | 2SC4043 SI-N 20V 50mA 0.15W 3.2GHz2SC4046 SI-N 120V 0.2A 8W 350MHz | 2SC4052 SI-N 600V 3A 40W 20MHz2SC4056 SI-N 600V 8A 45W | 2SC4059 SI-N 600/450V 15A 130W2SC4064 SI-N 50V 12A 35W 40MHz | 2SC4107 SI-N 500/400V 10A 60W2SC4119 N-DARL+D 1500V 15A 250W B | 2SC4123 SI-N+D 1500V 7A 60W2SC4125 SI-N+D 1500/800V 10A 70W | 2SC4131 SI-N 100V 15A60W 18MHz2SC4135 SI-N 120V 2A 15W 200MHz | 2SC4137 SI-N 25V 0.1A300MHz2SC4138 SI-N 500V 10A 80W <1/3.5us | 2SC4153 SI-N 200V 7A 30W 0.5us2SC4157 SI-N 600V 10A 100W | 2SC4159 SI-N 180V 1.5A 15W 100MHz2SC4161 SI-N 500V 7A 30W | 2SC4169 N-DARL+D 50V 1.2A 1W B=4K2SC4199 SI-N 1400V 10A 100W | 2SC4200 SI-N 20V 0.6A 5W 2.5GHz2SC4204 SI-N 30V 0.7A 0.6W | 2SC4231 SI-N 1200/800V 2A30W2SC4235 SI-N 1200/800V 3A 80W | 2SC4236 SI-N 1200/800V 6A 100W2SC4237 SI-N 1200/800V 10A 150W | 2SC4242 SI-N 450/400V 7A2SC4256 SI-N 1500V 10A 175W 6MHz | 2SC4278 SI-N 150V 10A 100W 30MHz2SC4288A SI-N1600/600V 12A 200W | 2SC4289A SI-N 1500V 16A 200W2SC4290A SI-N 1500V 20A 200W | 2SC4297 SI-N 500V 12A 75W 10MHz2SC4298 SI-N 500V 15A 80W 10MHz | 2SC4300 SI-N 900V 5A 75W 1/6us2SC4304 SI-N 800V 3A 35W | 2SC4308 SI-N 30V 0.3A 0.6W 2.5GHz2SC4313 SI-N 900V 10A 100W 0.5us | 2SC4381 SI-N 150V 2A 25W 15MHz2SC4382 SI-N 200V 2A 25W 15MHz | 2SC4386 SI-N 160/120V 8A 75W 20MHz2SC4387 SI-N 200V 10A 80W 20MHz | 2SC4388 SI-N 200V 15A85W 20MHz2SC4408 SI-N 80V 2A 0.9W 100/600ns | 2SC4429 SI-N 1100/800V 8A 60W2SC4430 SI-N 1100V 12A 65W 15MHz | 2SC4431 SI-N 120V 1.5A 20W 150MHz2SC4439 SI-N 180V 0.3A 8W 400MHz | 2SC4467 SI-N 160/120V 8A 80W 20MHz2SC4468 SI-N 200V 10A 80W 20MHz | 2SC4484 SI-N 30V 2.5A 1W 250MHz2SC4488 SI-N 120V 1A 1W 120MHz | 2SC4511 SI-N 120V 6A 30W 20MHz2SC4512 SI-N 120V 6A 50W 20MHz | 2SC4517 SI-N 900V 3A 30W 6MHz2SC4517A SI-N 1000V 3A 30W 0.5us | 2SC4531 SI-N+D 1500V 10A 50W2SC4532 SI-N 1700V 10A 200W 2uS | 2SC4538 SI-N 900V 5A 80W2SC454 SI-N 30V 0.1A 230MHz | 2SC4542 SI-N 1500V 10A 50W2SC4547 N-DARL+D 85V 3A 30W B>2K | 2SC4557 SI-N 900V 10A 80W <1/5.5us2SC4560 SI-N 1500V 10A 80W | 2SC458 SI-N 30V 0.1A 230MC UNI0.2W 230MHz2SC461 SI-N 30V 0.1A 0.2W 230MHz | 2SC4744 SI-N 1500V 6A POWER2SC4745 SI-N 1500V 6A | 2SC4747 SI-N 1500V 10A 50W0.3us2SC4758 SI-N 1500V 8A 50W HI-RES | 2SC4769 SI-N+D 1500V 7A 60W2SC4770 SI-N 1500/800V 7A 60W | 2SC4793 SI-N 230V 1A 2W 100MHz2SC4804 SI-N 900V 3A 30W 0.3us | 2SC4820 SI-N 450V 6A 30W 12MHz2SC4826 SI-N 200V 3A 1.3W 300MHz | 2SC4834 SI-N 500V 8A 45W <0.3/1.42SC4883A SI-N 180V 2A 20W 120MHz | 2SC4891 SI-N 1500V 15A 75W2SC4908 SI-N 900V 3A 35W 1us | 2SC4924 SI-N 800V 10A70W2SC4977 SI-N 450V 7A 40W | 2SC5002 SI-N 1500V 7A 80W 2SC5003 SI-N+D 1500V 7A 80W | 2SC5027 SI-N 1100V 3A 50W 0.3us2SC5030 SI-N 50V 5A 1.3W 150MHz | 2SC5045 SI-N 1600V 15A75W2SC5047 SI-N 1600V 25A 250W | 2SC5048 SI-N 1500V 12A 50W 0.3us2SC5070 SI-N 30V 2A 1.5W B>800 | 2SC5086 SI-N 20V 80MA 7GHZ2SC509 SI-N 35V 0.5A 0.6W 60MHz | 2SC5144 SI-N 1700V 20A 200W2SC5148 SI-N 1500V 8A 50W 0.2us | 2SC5149 SI-N+D 1500V 8A 50W 0.2us2SC5150 SI-N 1700V 10A 50W 03us | 2SC5171 SI-N 180V 2A 20W 200MHz2SC5198 SI-N 140V 10A 100W 30MHz | 2SC5207 SI-N 1500V 10A 50W 0.4us2SC5242 SI-N 230V 15A 130W 30MHz | 2SC5244A SI-N 1600V 30A 200W2SC5296 SI-N+D 1500V 8A 60W | 2SC5297 SI-N 1500V 8A 60W0.1W 0.700M2SC536 SI-N 40V 0.1A 180MC UNI | 2SC620 SI-N 50V 0.2A 0.25W UNI2SC643 SI-N 1100V 2.5A 50W | 2SC644 SI-N 30V 50mA 0.25W2SC645 SI-N 30V 30mA 0.14W 200MHz | 2SC710 SI-N 30V 0.03A 200MHz2SC711 SI-N 30V 0.05A 150MHz | 2SC712 SI-N 30V 0.5A150MHz2SC717 SI-N 30V 50mA 0.2W 600MHz | 2SC730 SI-N 40V 0.4APQ=1.5W2SC732 SI-N 50V 0.15A 0.4W 150MHz | 2SC735 SI-N 35V 0.4A 0.3W UNI2SC752 SI-N 15V 100mA 0.1W | 2SC756 SI-N 40V 4A 10W65MHz2SC784 SI-N 40V 0.02A 500MC RF | 2SC815 SI-N 60V 0.2A 0.25W 200MHz2SC828 SI-N 30V 0.05A 0.25W UNI | 2SC829 SI-N 30V 30mA 0.4W 230MHz2SC839 SI-N 50V 0.03A 250MHz | 2SC867 SI-N 400V 1A 23W 8MHz2SC869 SI-N 160V 30mA 0.2W 150MHz | 2SC898A SI-N 150V 7A80W 15MHz2SC900 SI-N 30V 0.03A 100MHz | 2SC930 SI-N 15V 0.03A300MC RF2SC936 SI-N 1000V 1A 22W POWER | 2SC941 SI-N 35V 20mA 0.2W 120MHz2SC943 SI-N 60V 0.2A 0.3W 220MHz | 2SC945 SI-N 50V 0.1A 250MC UNI2SC982 N-DARL 40V 0.3A 0.4W。
M220263MMJ资料
Revision: 02-26-07
元器件交易网
MtronPTI Lead Free Solder Profile
MtronPTI reserves the right to make changes to the product(s) and service(s) described herein without notice. No liability is assumed as a result of their use or application.
元器件交易网
M220x Series
QiK Chip™
9x14 mm, 3.3/2.5/1.8 Volt, PECL/LVDS/CML, Clock Oscillator
Featuring QiK ChipTM Technology Superior Jitter Performance (comparable to SAW based) Frequencies from 150 MHz to 1.4 GHz Designed for a short 2 week cycle time Applications: Telecommunications such as SONET / SDH / DWDM / FEC / SERDES / OC-3 thru OC-192 Wireless base stations / WLAN / Gigabit Ethernet Avionic flight controls and military communications
Output Waveform: LVDS/CML/PECL
MtronPTI reserves the right to make changes to the product(s) and service(s) described herein without notice. No liability is assumed as a result of their use or application.
2SC3526H资料
13.5±0.5
2.54±0.15
0.7+0.3 –0.2
0.7±0.1
8.6±0.2
■ Features
1: Emitter 2: Collector 3: Base EIAJ: SC-51 TO-92L-A1 Package
2
SJC00133BED
元器件交易网
Request for your special attention and precautions in using the technical information and semiconductors described in this material
1
元器件交易网
2SC3526H
PC Ta
1.6
240
IC VCE
Ta = 25°C IB = 5.0 mA 4.5 mA 160 4.0 mA 3.5 mA 120 3.0 mA 2.5 mA 80 2.0 mA 1.5 mA 40 1.0 mA 0.5 mA
120
IC VBE
VCE = 5 V 25°C Ta = 75°C −25°C
Collector power dissipation PC (W)
200
100
Collector current IC (mA)
1.2
Collector current IC (mA)
80
0.8
60
40
0.4
20
0
0
40
80
100 IC / IB = 10
hFE IC