IRF640

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_RF640

_RF640

IRF640IRF640属于Vishay的第三代Power MOSFETs。

IRF640为设计者提供了转换快速、坚固耐用、低导通阻抗和高效益的强力组合。

TO-220封装的IRF640普遍适用于功耗在50W左右的工商业应用,低热阻和低成本的TO-220封装,使IRF640得到业内的普遍认可。

D2PAK封装的IRF640适用于贴片安装,比起现有的任何其他贴片封装,可说是功率最高,导通阻抗最低。

IRF640的D2PAK封装可适应高强度电流的应用。

IRF640的TO-262则适用于低端通孔安装。

基本参数:IRF640,采用TO-220AB 封装方式。

晶体管极性:N沟道二氧化硅漏极电流, Id 最大值:18A电压, Vds 最大:200V开态电阻, Rds(on):0.15ohm电压 @ Rds测量:10V电压, Vgs 最高:4V功耗:150W封装类型:TO-220AB针脚数:3功率, Pd:150W封装类型:TO-220AB晶体管类型:MOSFET热阻, 结至外壳A:1°C/W电压 Vgs @ Rds on 测量:10V电压, Vds 典型值:200V电流, Id 连续:18A电流, Idm 脉冲:72A表面安装器件:通孔安装阈值电压, Vgs th 典型值:4V阈值电压, Vgs th 最高:4V特性:贴片安装 IRF640S可选卷带包装 IRF640S低端通孔安装 IRF640L动态dv/dt率150℃工作温度 IRF640S、IRF640L快速转换速率可恢复性雪崩测定并行简易仅需简单驱动无铅环保。

IRF系列高压MOS管

IRF系列高压MOS管

高压MOS管----IRF系列学习杂记2008-01-29 15:04:28 阅读2856 评论2 字号:大中小订阅IRF024 N-场效应60 17 60 TO-204AAIRF034 N-场效应60 30 90 TO-204AEIRF035 N-场效应60 25 90 TO-204AEIRF044 N-场效应60 30 150 TO-204AEIRF045 N-场效应60 30 150 TO-204AEIRF054 N-场效应60 30 180 TO-204AAIRF120 N-场效应100 8.0 40 TO-3IRF121 N-场效应60 8.0 40 TO-3IRF122 N-场效应100 7.0 40 TO-3IRF123 N-场效应60 7.0 40 TO-3IRF130 100V 14A 79W N-场效应IRF130(铁)NMOS GDS 100V14A79W75/45nS0.16 功放开关IRF131 N-场效应60V14A 75W TO-3IRF132 N-场效应100V12A75W TO-3IRF133 N-场效应60V12A 75W TO-3IRF140 N-场效应100V 27A 125W TO-204AEIRF141 N-场效应60V 27A 125W TO-204AEIRF142 N-场效应100V24A 125W TO-204AEIRF143 N-场效应60V 24A 125W TO-204AEIRF150 N-场效应100V 40A 150W TO-204AEIRF151 N-场效应60V 40A 150W TO-204AEIRF152 N-场效应100V 33A 150W TO-204AEIRF153 N-场效应60V33A 150W TO-204AEIRF15N65 650V 5A 80W MOSIRF16N65 650V 6A 80W MOSIRF220 N-场效应200V 5.0A 40W TO-3IRF221 N-场效应150V 5.0A 40W TO-3IRF223 N-场效应150V 4.0A 40W TO-3IRF224 N-场效应250V3.8A 40W TO-204AAIRF225 N-场效应250V 3.3A 40W TO-204AAIRF230 N-场效应200V 9.0A 75W TO-3IRF230(铁)NMOS GDS 200V9A75W50/40nS0.4 功放开关IRF231 N-场效应150V 9.0A 75W TO-3IRF232 N-场效应200V 8.0A 75W TO-3IRF233 N-场效应150V 8.0A 75W TO-3IRF234 N-场效应250V 8.1A 75W TO-204AAIRF235 N-场效应250V 6.5A 75W TO-204AAIRF240 N-场效应200V 18A 125W TO-204AEIRF241 N-场效应150V 18A 125W TO-204AEIRF242 N-场效应200V 16A 125W TO-204AEIRF243 N-场效应150V 16A 125W TO-204AEIRF244 N-场效应250V 14A 125W TO-204AAIRF245 N-场效应250V 13A 125W TO-204AAIRF250 N-场效应200V 30A 150W TO-204AEIRF251 N-场效应150V 30A 150W TO-204AEIRF252 N-场效应200V 25A 150W TO-204AEIRF253 N-场效应150V 25A 150W TO-204AEIRF254 N-场效应250V 22A 150W TO-204AEIRF255 N-场效应250V 20A 150W TO-204AEIRF2807 70V 78A 180W MOSIRF320 N-场效应400V 3.0A 40W TO-3IRF3205 55V 110A 200W MOSIRF321 N-场效应350V 3.0A 40W TO-3IRF322 N-场效应400V 2.5A 40W TO-3IRF323 N-场效应350V 2.5A 40W TO-3IRF330 N-场效应400V 5.5A 75W TO-3IRF332 N-场效应400V 4.5A 75W TO-3IRF333 N-场效应350V 4.5A 75W TO-3IRF340 N-场效应400V 10A 125W TO-3IRF341 N-场效应350V 10A 125W TO-3IRF342 N-场效应400V 8.0A 125W TO-3IRF343 N-场效应350V 8.0A 125W TO-3IRF350 N-场效应400V 15A 150W TO-3IRF351 N-场效应350V 15A 150W TO-3IRF352 N-场效应400V 13A 150W TO-3IRF353 N-场效应350V 13A 150W TO-3IRF360 N-场效应400V 25A 300W TO-204AEIRF362 N-场效应400V 22A 300W TO-204AEIRF3710 100V 46A 150W MOSIRF420 N-场效应500V 2.5A 50W TO-3IRF421 N-场效应450V 2.5A 50W TO-3IRF422 N-场效应500V 2.0A 50W TO-3IRF423 N-场效应450V 2.0A 50W TO-3IRF430 N-场效应500V 4.5A 75W TO-3IRF431 N-场效应450V 4.5A 75W TO-3IRF432 N-场效应500V 4.0A 75W TO-3IRF433 N-场效应450V 4.0A 75W TO-3IRF440 N-场效应500V 8.0A 125W TO-3IRF440(铁)NMOS GDS 500V8A125W35/30nS0.85 功放开关IRF441 N-场效应450V 8.0A 125W TO-3IRF442 N-场效应500V 7.0A 125W TO-3IRF443 N-场效应450V 7.0A 125W TO-3IRF448 N-场效应500V 9.6A 130W TO-204AAIRF449 N-场效应500V 8.6A 130W TO-204AAIRF450 N-场效应500V 13A 150W TO-3IRF450(铁)NMOS GDS 500V13A125W66/60nS0.4 功放开关IRF451 N-场效应450V 13A 150W TO-3IRF452 N-场效应500V 12A 150W TO-3IRF453 N-场效应450V 12A 150W TO-3IRF460 N-场效应500V 21A 300W TO-204AEIRF460(铁)NMOS GDS 500V 21AW66/60nS0.4 功放开关IRF462 N-场效应500V 19A 300W TO-204AEIRF48 N-场效应60V50A190W TO-220ABIRF510 N-场效应100V 5.6A 43W TO-220ABIRF511 N-场效应80V 5.6A 43W TO-220ABIRF512 N-场效应100V 4.9A 43W TO-220ABIRF513 N-场效应80V 4.9A 43W TO-220ABIRF520 N-场效应100V 9.2A 60W TO-220ABIRF521 N-场效应80V 9.2A 60WTO-220ABIRF522 N-场效应100V 8A 60W TO-220ABIRF523 N-场效应80V 8A 60W TO-220ABIRF530 N-场效应100V 14A 79W TO-220ABIRF530 N-FET100V14A79W 51/36ns0.18ohmIRF530 NMOS GDS 100V14A79W51/36nS0.18 功放开关IRF531 N-场效应80V 14A 79W TO-220ABIRF532 N-场效应100V 12A 79W TO-220ABIRF533 N-场效应80V 12A 79W TO-220ABIRF540 NMOS+D GDS 100V28A150W110/75nS0.077 功放开关IRF540A NMOS GDS 100V28A107W Id m=110A/0.052Ω 功放开关IRF541 NMOS GDS 80V28A150W110/75nS0.077 功放开关IRF542 N-场效应100V 25A 150W TO-220ABIRF543 N-场效应80V 25A 150W TO-220ABIRF610 NMOS GDS 200V3.3A43W26/13nS1.5 功放开关IRF611 N-场效应150V 3.3A 43W TO-220ABIRF612 N-场效应200V 2.6A 43W TO-220ABIRF614 N-场效应250V 2.0A 20W TO-220ABIRF615 N-场效应250V 1.6A 20W TO-220ABIRF620 N-场效应200V 5A 40W TO-220ABIRF621 N-场效应150V 5A 40W TO-220ABIRF622 N-场效应200V 4A 40W TO-220ABIRF623 N-场效应150V 4A 40W TO-220ABIRF624 N-场效应250V 3.8A 40W TO-220ABIRF625 N-场效应250V 3.3A 40W TO-220ABIRF630 NMOS GDS 200V9A75W50/40nS0.4 功放开关IRF631 N-场效应150V 9A 75W TO-220ABIRF632 N-场效应200V 8A 75W TO-220ABIRF633 N-场效应150V 8A 75W TO-220ABIRF634 N-场效应250V 8.1A 75W TO-220ABIRF635 N-场效应250V 6.5A 75W TO-220ABIRF640 N-FET GDS 200V18A125W 77/54ns0.18ohm功放开关IRF641 N-场效应150V 18A 125W TO-220ABIRF642 N-场效应200V 16A 125W TO-220ABIRF643 N-场效应150V 16A 125W TO-220ABIRF644 N-场效应250V 14A 125W TO-220ABIRF645 N-场效应250V 13A 125W TO-220ABIRF710 N-场效应400V 2.0A 36W TO-220ABIRF711 N-场效应350V 2.0A 36W TO-220ABIRF712 N-场效应400V 1.7A 36W TO-220ABIRF713 N-场效应350V 1.7A 36W TO-220ABIRF720 N-场效应GDS 400V 3.3A 50W TO-220AB 20nS1.8功放开关IRF721 N-场效应350V 3.3A 50W TO-220ABIRF722 N-场效应400V 2.8A 50W TO-220ABIRF723 N-场效应350V 2.8A 50W TO-220ABIRF730 NMOS GDS 400V5.5A75W29/24nS1.0 功放开关IRF732 N-场效应400V 4.5A 74W TO-220ABIRF733 N-场效应350V 4.5A 74W TO-220ABIRF740 N-FET400V10A125W 41/36ns0.55ohm 功放开关IRF741 N-场效应350V 10A 125W TO-220ABIRF742 N-场效应400V 8.3A 125W TO-220ABIRF743 N-场效应350V 8.3A 125W TO-220ABIRF820 N-场效应500V 2.5A 50W TO-220ABIRF821 N-场效应450V 2.5A 50W TO-220ABIRF822 N-场效应500V 2.2A 50W TO-220ABIRF823 N-场效应450V 2.2A 50W TO-220ABIRF830 NMOS GDS 500V4.5A75W23/23nS1.5 功放开关IRF831 N-场效应450V 4.5A 74W TO-220ABIRF832 N-场效应500V 4.0A 74W TO-220ABIRF833 N-场效应450V 4.0A 74W TO-220ABIRF840 NMOS GDS 500V8A125W35/33nS0.85 功放开关IRF841 N-场效应450V 8.0 125W TO-220ABIRF842 N-场效应500V 7.0 125W TO-220ABIRF843 N-场效应450V 7.0 125W TO-220ABIRF9130 P-场效应100V-12A 75W TO-3IRF9131 P-场效应60V-12A 75W TO-3IRF9132 P-场效应100V-10A 75W TO-3IRF9133 P-场效应60V –10A 75W TO-3IRF9140 P-场效应100V –19A 125W TO-3IRF9141 P-场效应60V –19A 125W TO-3IRF9142 P-场效应100V –15A 125W TO-3IRF9143 P-场效应60V –15A 125W TO-3IRF9230 P-场效应200V6.5A 75W TO-3IRF9231 P-场效应150V6.5A 75W TO-3IRF9232 P-场效应200V5.5A 75W TO-3IRF9233 P-场效应150V5.5A 75W TO-3IRF9240 P-场效应200V –11A 125W TO-3IRF9241 P-场效应150V –11A 125W TO-3IRF9242 P-场效应200V9.0A 125W TO-3IRF9243 P-场效应150V9.0A 125W TO-3IRF9510 P-场效应100V3.0A 20W TO-220ABIRF9511 P-场效应60V3.0A 20W TO-220ABIRF9512 P-场效应100V2.5A 20W TO-220ABIRF9513 P-场效应60V2.5A 20W TO-220ABIRF9520 P-场效应100V6.0A 40W TO-220ABIRF9521 P-场效应60V6.0A 40W TO-220ABIRF9522 P-场效应100V5.0A 40W TO-220ABIRF9523 P-场效应60V5.0A 40W TO-220ABIRF9530 PMOS GDS 100V12A75W140/140nS0.4 功放开关IRF9531 PMOS GDS 60V12A75W140/140S0.3 功放开关IRF9532 P-场效应100V –10A 75W TO-220ABIRF9533 P-场效应60V –10A 75W TO-220ABIRF9540 P-场效应100V –19A 125W TO-220ABIRF9541 PMOS GDS 60V19A125W140/141nS0.2 功放开关IRF9542 P-场效应100V –15A 125W TO-220ABIRF9543 P-场效应60V –15A 125W TO-220ABIRF9610 PMOS GDS 200V1A20W25/15nS2.3 功放开关IRF9611 P-场效应150V1.75A 20W TO-220ABIRF9612 P-场效应200V1.5A 20W TO-220ABIRF9613 P-场效应150V1.5A 20W TO-220ABIRF9620 P-场效应200V3.5A 40W TO-220ABIRF9621 P-场效应150V3.5A 40W TO-220ABIRF9622 P-场效应200V3.0A 40W TO-220ABIRF9623 P-场效应150V3.0A 40W TO-220ABIRF9630 PMOS GDS 200V6.5A75W100/80nS0.8 功放开关IRF9631 P-场效应150V 6.5A 75W TO-220ABIRF9632 P-场效应200V 5.5A 75W TO-220ABIRF9633 P-场效应150V 5.5A 75W TO-220ABIRF9634 P-场效应250V 3.4A 33W TO-220ABIRF9640 P-FET200V11A125W15/12ns0.5ohmIRF9641 P-场效应150V 11A 125W TO-220ABIRF9642 P-场效应200V 9A 125W TO-220ABIRF9643 P-场效应150V 9A 125W TO-220ABIRF9Z30 50V 18A 74W MOSIRF9Z34 60V 18A 74W MOSIRFBC20 NMOS GDS 600V2.2A50W15/30nS4.4 功放开关IRFBC30 NMOS GDS 600V3.6A74W20/21nS2.2 功放开关IRFBC40 NMOS GDS 600V6.2A125W27/30nS1.2 功放开关IRFBE30 NMOS GDS 800V2.8A75W15/30nS3.5 功放开关IRFD113 NMOS GDS 60V0.8A1W0.8 功放开关IRFD120 NMOS GDS 100V1.3A1W70/70nS0.3 功放开关IRFD123 NMOS GDS 80V1.1A1W70/70nS0.3 功放开关IRFD9120 PMOS GDS 100V1A1W0.6 功放开关IRFI730 NMOS GDS 400V4A32W1.0 功放开关IRFI744 NMOS GDS 400V4A32W1.0 功放开关IRFP054 NMOS GDS 60V65A180W0.022 功放开关IRFP064 60V 70A 300W MOSIRFP140 NMOS GDS 100V29150W0.85 功放开关IRFP150 NMOS GDS 100V40A180W210/140nS0.55 功放开关IRFP240 NMOS GDS 200V19A150W0.18 功放开关IRFP250 NMOS GDS 200V33A180W180/120nS0.08 功放开关IRFP254 250V 23A 180W MOSIRFP260 200V 46A 280W MOSIRFP264 250V 38A 280W MOSIRFP340 NMOS GDS 400V10A150W0.55 功放开关IRFP350 NMOS GDS 400V16A180W77/71nS0.3 功放开关IRFP353 NMOS GDS 350V14A180W77/71XnS0.4 功放开关IRFP360 NMOS GDS 400V23A250W140/99nS0.2 功放开关IRFP440 NMOS GDS 500V8.1A150W0.85 功放开关IRFP450 NMOS GDS 500V14A180W66/60nS0.4 功放开关IRFP460 NMOS GDS 500V20A250W120/98nS0.27 功放开关IRFP9140 PMOS GDS 100V19A150W100/70nS0.2 功放开关IRFP9240 PMOS GDS 200V12A150W68/57nS0.5 功放开关IRFPC40 600V 6.5A 150W MOSIRFPC50 600V 10A 180W MOSIRFPC60 600V 13A 200W MOSIRFPE40 800V 5.3A 150W MOSIRFPF40 NMOS GDS 900V4.7A150W2.5 功放开关IRFPF50 900V 6.8A 180W MOSIRFPG42 NMOS GDS 1000V3.9A150W4.2 功放开关IRFPG50 1000V 6.1A 180W MOSIRFS630B NMOS GDS 200V9A38W50/40nS0.4 =IRF630 IRFS634B NMOS GDS 250V8.1A38W50/40nS0.4 =IRF634 IRFS640B NMOS GDS 200V18A43W50/40nS0.4 =IRF640 IRFS9630 PMOS GDS 200V6.5A75W100/80nS0.8 功放开关IRFU020 NMOS GDS 50V15A42W 83/39nS0.1 功放开关IRFZ34 N-FET60V30A90W110/80ns0.05ohmIRFZ44 60V 35A 150W MOSIRFZ48 60V 50A 250W MOS。

常用高清行管和大功率三极管主要参数表

常用高清行管和大功率三极管主要参数表
3. 行偏转线圈或行输出变压器局部短路造成行负责过重
常见场输出集成电路击穿导致行偏转线圈或行输出变压器绝缘性能下降,产生局部短路、行输出逆程电容漏电等。如果保护电路性能不完善,则会引起行管过流损坏。海信高清电视由于电源保护措施比较完善,所以这种情况不多见,表现出来的现象是行一开机就停。
4. 电源电压升高
2SC935 3DD102D、2SD320 电源调整管
2SC8937 D2027、2SD818 行输出管
2SC1034 2SD818、2SD299 行输出管
2SC1162 FA433A、2SC2068 场输出枕形校正
2SC1172 D2027、2SD820 行输出管
2SC1209 3DG12A、2SD734 电源误差放大管
*C3842 120 1500 6 行管
*C3883 50 1500 5 行管
C3885 50 1400 7 行管
C3886 50 1400 8 行管
C3887 80 1400 7 行管
C3888 80 1400 80 行管
C3889 80 1400 80 行管
*C3891 50 1400 6 行管
D1887 70 1500 10 行管
*D2125 50 1500 5 行管
*D870 50 1500 5 行管
功率Pcm/W 反压BVCBO 电流ICM/A (*带阻尼)
进口与国产显示器常用三极管代换表
型号 可代用型号
2SA562 CG673B、2SB689 预视放
2SA670 2SA1069、2SB513 电源调整管
2SB556K CD77-1A、3CF5B 电源调整
2SB621 3CG23B、2SB1035 电源推动管

常用MOS管型号参数

常用MOS管型号参数

场效应管分类型号简介封装DISCRETEMOS FET 2N7000 60V,0.115A TO-92 DISCRETEMOS FET 2N7002 60V,0.2A SOT-23 DISCRETEMOS FET IRF510A 100V,5.6A TO-220 DISCRETEMOS FET IRF520A 100V,9.2A TO-220 DISCRETEMOS FET IRF530A 100V,14A TO-220 DISCRETEMOS FET IRF540A 100V,28A TO-220 DISCRETEMOS FET IRF610A 200V,3.3A TO-220 DISCRETEMOS FET IRF620A 200V,5A TO-220 DISCRETEMOS FET IRF630A 200V,9A TO-220 DISCRETEMOS FET IRF634A 250V,8.1A TO-220 DISCRETEMOS FET IRF640A 200V,18A TO-220 DISCRETEMOS FET IRF644A 250V,14A TO-220 DISCRETEMOS FET IRF650A 200V,28A TO-220 DISCRETEMOS FET IRF654A 250V,21A TO-220 DISCRETEMOS FET IRF720A 400V,3.3A TO-220 DISCRETEMOS FET IRF730A 400V,5.5A TO-220 DISCRETEMOS FET IRF740A 400V,10A TO-220 DISCRETEMOS FET IRF750A 400V,15A TO-220 DISCRETEMOS FET IRF820A 500V,2.5A TO-220 DISCRETEMOS FET IRF830A 500V,4.5A TO-220 DISCRETEMOS FET IRF840A 500V,8A TO-220 DISCRETEDISCRETEMOS FET IRF9540 -100V,-19A TO-220 DISCRETEMOS FET IRF9610 -200V,-1.8A TO-220 DISCRETEMOS FET IRF9620 -200V,-3.5A TO-220 DISCRETEMOS FET IRFP150A 100V,43A TO-3P DISCRETEMOS FET IRFP250A 200V,32A TO-3P DISCRETEMOS FET IRFP450A 500V,14A TO-3P DISCRETEMOS FET IRFR024A 60V,15A D-PAK DISCRETEMOS FET IRFR120A 100V,8.4A D-PAK DISCRETEMOS FET IRFR214A 250V,2.2A D-PAK DISCRETEMOS FET IRFR220A 200V,4.6A D-PAK DISCRETEMOS FET IRFR224A 250V,3.8A D-PAK DISCRETEMOS FET IRFR310A 400V,1.7A D-PAK DISCRETEMOS FET IRFR9020 -50V,-9.9A D-PAK DISCRETEMOS FET IRFS540A 100V,17A TO-220F DISCRETEMOS FET IRFS630A 200V,6.5A TO-220F DISCRETEMOS FET IRFS634A 250V,5.8A TO-220F DISCRETEMOS FET IRFS640A 200V,9.8A TO-220F DISCRETEMOS FET IRFS644A 250V,7.9A TO-220F DISCRETEMOS FET IRFS730A 400V,3.9A TO-220F DISCRETEMOS FET IRFS740A 400V,5.7A TO-220F DISCRETEMOS FET IRFS830A 500V,3.1A TO-220F DISCRETEDISCRETEMOS FET IRFS9Z34 -60V,-12A TO-220F DISCRETEMOS FET IRFSZ24A 60V,14A TO-220F DISCRETEMOS FET IRFSZ34A 60V,20A TO-220F DISCRETEMOS FET IRFU110A 100V,4.7A I-PAK DISCRETEMOS FET IRFU120A 100V,8.4A I-PAK DISCRETEMOS FET IRFU220A 200V,4.6A I-PAK DISCRETEMOS FET IRFU230A 200V,7.5A I-PAK DISCRETEMOS FET IRFU410A 500V ,1.2A I-PAK DISCRETEMOS FET IRFU420A 500V,2.3A I-PAK DISCRETEMOS FET IRFZ20A 50V,15A TO-220 DISCRETEMOS FET IRFZ24A 60V,17A TO-220 DISCRETEMOS FET IRFZ30 50V,30A TO-220 DISCRETEMOS FET IRFZ34A 60V,30A TO-220 DISCRETEMOS FET IRFZ40 50V,50A TO-220 DISCRETEMOS FET IRFZ44A 60V,50A TO-220 DISCRETEMOS FET IRLS530A 100V,10.7A,Logic TO-220F DISCRETEMOS FET IRLSZ14A 60V,8A,Logic TO-220F DISCRETEMOS FET IRLZ24A 60V,17A,Logic TO-220 DISCRETEMOS FET IRLZ44A 60V,50A,Logic TO-220 DISCRETEMOS FET SFP36N03 30V,36A TO-220 DISCRETEMOS FET SFP65N06 60V,65A TO-220 DISCRETEDISCRETEMOS FET SFP9634 -250V,-5A TO-220 DISCRETEMOS FET SFP9644 -250V,-8.6A TO-220 DISCRETEMOS FET SFP9Z34 -60V,-18A TO-220 DISCRETEMOS FET SFR9214 -250V,-1.53A D-PAK DISCRETEMOS FET SFR9224 -250V,-2.5A D-PAK DISCRETEMOS FET SFR9310 -400V,-1.5A D-PAK DISCRETEMOS FET SFS9630 -200V,-4.4A TO-220F DISCRETEMOS FET SFS9634 -250V,-3.4A TO-220F DISCRETEMOS FET SFU9220 -200V,-3.1A I-PAK DISCRETEMOS FET SSD2002 25V N/P Dual 8SOP DISCRETEMOS FET SSD2019 20V P-ch Dual 8SOP DISCRETEMOS FET SSD2101 30V N-ch Single 8SOP DISCRETEMOS FET SSH10N80A 800V,10A TO-3P DISCRETEMOS FET SSH10N90A 900V,10A TO-3P DISCRETEMOS FET SSH5N90A 900V,5A TO-3P DISCRETEMOS FET SSH60N10 100V,60A TO-3P DISCRETEMOS FET SSH6N80A 800V,6A TO-3P DISCRETEMOS FET SSH70N10A 100V,70A TO-3P DISCRETEMOS FET SSH7N90A 900V,7A TO-3P DISCRETEMOS FET SSH9N80A 800V,9A TO-3P DISCRETEMOS FET SSP10N60A 600V,9A TO-220 DISCRETEDISCRETEMOS FET SSP2N90A 900V,2A TO-220 DISCRETEMOS FET SSP35N03 30V,35A TO-220 DISCRETEMOS FET SSP3N90A 900V,3A TO-220 DISCRETEMOS FET SSP4N60A 600V,4A TO-220 DISCRETEMOS FET SSP4N60AS 600V,4A TO-220 DISCRETEMOS FET SSP4N90AS 900V,4.5A TO-220 DISCRETEMOS FET SSP5N90A 900V,5A TO-220 DISCRETEMOS FET SSP60N06 60V,60A TO-220 DISCRETEMOS FET SSP6N60A 600V,6A TO-220 DISCRETEMOS FET SSP70N10A 100V,55A TO-220 DISCRETEMOS FET SSP7N60A 600V,7A TO-220 DISCRETEMOS FET SSP7N80A 800V,7A TO-220 DISCRETEMOS FET SSP80N06A 60V,80A TO-220 DISCRETEMOS FET SSR1N60A 600V,0.9A D-PAK DISCRETEMOS FET SSR2N60A 600V,1.8A D-PAK DISCRETEMOS FET SSR3055A 60V,8A D-PAK DISCRETEMOS FET SSS10N60A 600V,5.1A TO-220F DISCRETEMOS FET SSS2N60A 600V,1.3A TO-220F DISCRETEMOS FET SSS3N80A 800V,2A TO-220F DISCRETEMOS FET SSS3N90A 900V,2A TO-220F DISCRETEMOS FET SSS4N60AS 600V,2.3A TO-220F DISCRETEDISCRETEMOS FET SSS5N80A 800V,3A TO-220F DISCRETEMOS FET SSS6N60 600V, 3.2A TO-220(F/P)。

IRF640N(MOSFET)

IRF640N(MOSFET)

HEXFET ® Power MOSFET 10/09/00Parameter Max.Units I D @ T C = 25°CContinuous Drain Current, V GS @ 10V 18I D @ T C = 100°CContinuous Drain Current, V GS @ 10V 13A I DMPulsed Drain Current 72P D @T C = 25°CPower Dissipation 150W Linear Derating Factor 1.0W/°C V GSGate-to-Source Voltage ± 20V E ASSingle Pulse Avalanche Energy 247mJ I ARAvalanche Current 18A E ARRepetitive Avalanche Energy 15mJ dv/dtPeak Diode Recovery dv/dt 8.1V/ns T JOperating Junction and -55 to +175T STG Storage Temperature RangeSoldering Temperature, for 10 seconds300 (1.6mm from case )°CMounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)Absolute Maximum RatingsDescription lAdvanced Process Technologyl Dynamic dv/dt Ratingl 175°C Operating Temperaturel Fast Switchingl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements D 2Pak IRF640NS TO-220AB IRF640N TO-262IRF640NL IRF640NIRF640NSIRF640NLFifth Generation HEXFET ® Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon area. This benefit, combined with the fast switchingspeed and ruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designer with anextremely efficient and reliable device for use in a widevariety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipation levelsto approximately 50 watts. The low thermal resistance andlow package cost of the TO-220 contribute to its wideacceptance throughout the industry.The D 2Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4. It provides thehighest power capability and the lowest possible on-resistance in any existing surface mount package. TheD 2Pak is suitable for high current applications because of itslow internal connection resistance and can dissipate up to2.0W in a typical surface mount application.The through-hole version (IRF640NL) is available for low-profile 1PD - 94006IRF640N/S/LIRF640N/S/LIRF640N/S/LIRF640N/S/LIRF640N/S/L。

IRF640使用及简介

IRF640使用及简介

IRF640使⽤及简介IRF640属于Vishay的第三代Power MOSFETs。

IRF640为设计者提供了转换快速、坚固耐⽤、低导通阻抗和⾼效益的强⼒组合。

TO-220封装的IRF640普遍适⽤于功耗在50W 左右的⼯商业应⽤,低热阻和低成本的TO-220封装,使IRF640得到业内的普遍认可。

D2PAK 封装的IRF640适⽤于贴⽚安装,⽐起现有的任何其他贴⽚封装,可说是功率最⾼,导通阻抗最低。

IRF640的D2PAK封装可适应⾼强度电流的应⽤。

IRF640的TO-262则适⽤于低端通孔安装。

基本参数:IRF640,采⽤TO-220AB 封装⽅式。

晶体管极性:N沟道漏极电流, Id 最⼤值:18A电压, Vds 最⼤:200V开态电阻, Rds(on):0.15ohm电压@ Rds测量:10V电压, Vgs 最⾼:4V功耗:150W封装类型:TO-220AB针脚数:3功率, Pd:150W封装类型:TO-220AB晶体管类型:MOSFET热阻, 结⾄外壳A:1°C/W电压Vgs @ Rds on 测量:10V电压, Vds 典型值:200V电流, Id 连续:18A电流, Idm 脉冲:72A表⾯安装器件:通孔安装阈值电压, Vgs th 典型值:4V阈值电压, Vgs th 最⾼:4V特性:贴⽚安装IRF640S 可选卷带包装IRF640S 低端通孔安装IRF640L 动态dv/dt率150℃⼯作温度IRF640S、IRF640L 快速转换速率可恢复性雪崩测定并⾏简易仅需简单驱动⽆铅环保。

IRF640 1a

IRF640 1a

IRF640IRF640FPN -CHANNEL 200V -0.150Ω-18A TO-220/TO-220FPMESH OVERLAY ™MOSFETs TYPICAL R DS(on)=0.150Ωs EXTREMELY HIGH dV/dt CAPABILITY s VERY LOW INTRINSIC CAPACITANCES sGATE CHARGE MINIMIZEDDESCRIPTIONThis power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY ™process.This technology matches and improves the performances compared with standard parts from various sources.APPLICATIONSs HIGH CURRENT SWITCHINGs UNINTERRUPTIBLE POWER SUPPLY (UPS)s DC/DC COVERTERS FOR TELECOM,INDUSTRIAL,AND LIGHTING EQUIPMENT.®INTERNAL SCHEMATIC DIAGRAMOctober 1999TO-220TO-220FP123123ABSOLUTE MAXIMUM RATINGSSymbol ParameterValueUnit IRF640IRF640FP V DS Drain-source Voltage (V GS =0)200V V DGR Drain-gate Voltage (R GS =20k Ω)200V V GS Gate-source Voltage±20V I D Drain Current (continuous)at T c =25oC 1818(**)A ID Drain Current (continuous)at T c =100o C 1111(**)A I DM (•)Drain Current (pulsed)7272A P tot Total Dissipation at T c =25o C 12540W Derating Factor1.00.32W/oC dv/dt(1)Peak Diode Recovery voltage slope 55V/ns V ISO Insulation Withstand Voltage (DC)2000VT s tg Storage Temperature-65to 150o C T jMax.Operating Junction Temperature150o C(•)Pulse width limited by safe operating area (1)I SD ≤18A,di/dt ≤300A/µs,V DD ≤V (BR)DSS ,Tj ≤T JMAXFirst Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet (**)Limited only by Maximum Temperature AllowedTYPE V DSS R DS(on)I D IRF640IRF640FP200V 200V<0.18Ω<0.18Ω18A 18A1/9THERMAL DATATO-220TO-220FPR thj-case Thermal Resistance Junction-case Max 1.0 3.12o C/WR thj-amb R thc-sinkT l Thermal Resistance Junction-ambient MaxThermal Resistance Case-sink TypMaximum Lead Temperature For Soldering Purpose62.50.5300o C/Wo C/Wo CAVALANCHE CHARACTERISTICSSymbol Parameter Max Value UnitI AR Avalanche Current,Repetitive or Not-Repetitive(pulse width limited by T j max)18AE AS Single Pulse Avalanche Energy(starting T j=25o C,I D=I AR,V DD=50V)280mJELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)OFFSymbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-sourceBreakdown VoltageI D=250µA V GS=0200VI DSS Zero Gate VoltageDrain Current(V GS=0)V DS=Max RatingV DS=Max Rating T c=125o C110µAµAI GSS Gate-body LeakageCurrent(V DS=0)V GS=±20V±100nA ON(∗)Symbol Parameter Test Conditions Min.Typ.Max.Unit V GS(th)Gate ThresholdVoltageV DS=V GS I D=250µA234VR DS(on)Static Drain-source OnResistanceV GS=10V I D=9A0.150.18ΩI D(o n)On State Drain Current V DS>I D(o n)x R DS(on)ma xV GS=10V18A DYNAMICSymbol Parameter Test Conditions Min.Typ.Max.Unitg f s(∗)ForwardTransconductanceV DS>I D(o n)x R DS(on)ma x I D=9A711SC iss C os s C rss Input CapacitanceOutput CapacitanceReverse TransferCapacitanceV DS=25V f=1MHz V GS=0120020060156026080pFpFpFIRF640/FP 2/9ELECTRICAL CHARACTERISTICS(continued)SWITCHING ONSymbol Parameter Test Conditions Min.Typ.Max.Unitt d(on) t r Turn-on TimeRise TimeV DD=100V I D=9AR G=4.7 ΩV GS=10V(see test circuit,figure3)13271735nsnsQ g Q gs Q gd Total Gate ChargeGate-Source ChargeGate-Drain ChargeV DD=160V I D=18A V GS=10V55102172nCnCnCSWITCHING OFFSymbol Parameter Test Conditions Min.Typ.Max.Unitt r(Voff) t f t c Off-voltage Rise TimeFall TimeCross-over TimeV DD=160V I D=18AR G=4.7 ΩV GS=10V(see test circuit,figure5)212550273265nsnsnsSOURCE DRAIN DIODESymbol Parameter Test Conditions Min.Typ.Max.UnitI SD I SDM(•)Source-drain CurrentSource-drain Current(pulsed)1872AAV SD(∗)Forward On Voltage I SD=18A V GS=0 1.5Vt rr Q rr I RRM Reverse RecoveryTimeReverse RecoveryChargeReverse RecoveryCurrentI SD=18A di/dt=100A/µsV DD=50V T j=150o C(see test circuit,figure5)2401.815nsµCA(∗)Pulsed:Pulse duration=300µs,duty cycle1.5%(•)Pulse width limited by safe operating areaSafe Operating Area for TO-220Safe Operating Area for TO-220FPIRF640/FP3/9Thermal Impedance for TO-220 Output Characteristics Transconductance Thermal Impedance for TO-220FP Transfer CharacteristicsStatic Drain-source On ResistanceIRF640/FP 4/9Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs TemperatureSource-drain Diode Forward Characteristics Capacitance VariationsNormalized On Resistance vs TemperatureIRF640/FP5/9Fig.1:Unclamped Inductive Load Test Circuit Fig.3:Switching Times Test Circuits For Resistive Load Fig.2:Unclamped Inductive Waveform Fig.4:Gate Charge test CircuitFig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesIRF640/FP6/9DIM.mminch MIN.TYP.MAX.MIN.TYP.MAX.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.402.720.0940.107D1 1.270.050E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.4 2.70.0940.106H210.010.400.3930.409L216.40.645L413.014.00.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.2 6.60.2440.260L9 3.5 3.930.1370.154DIA.3.75 3.850.1470.151L6ACDED 1FGL7L2Dia.F 1L5L4H 2L9F 2G 1TO-220MECHANICAL DATAP011CIRF640/FP7/9DIM.mm inch MIN.TYP.MAX.MIN.TYP.MAX.A 4.4 4.60.1730.181B 2.5 2.70.0980.106D 2.5 2.750.0980.108E 0.450.70.0170.027F 0.7510.0300.039F1 1.15 1.70.0450.067F2 1.15 1.70.0450.067G 4.95 5.20.1950.204G1 2.4 2.70.0940.106H 1010.40.3930.409L2160.630L328.630.6 1.126 1.204L49.810.60.3850.417L615.916.40.6260.645L799.30.3540.366Ø3 3.20.1180.126L2ABDEHGL6¯FL3G 1123F 2F 1L7L4TO-220FP MECHANICAL DATAIRF640/FP8/9Information furnished is believed to be accurate and reliable.However,STMicroelect r onics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third part i es which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics.Specification mentioned in this publication are subject to change without notice.This publication supersedes and replaces all informat i on previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics©1999STMicroelectronics –Printed in Italy –All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia -Brazil -China -Finland -France -Germany -Hong Kong -India -Italy -Japa n -Malaysia -Malta -Morocco -Singapore -Spain -Sweden -Switzerland -United Kingdom -U.S.A..IRF640/FP9/9This datasheet has been downloaded from:Free DownloadDaily Updated Database100% Free Datasheet Search Site100% Free IC Replacement Search SiteConvenient Electronic DictionaryFast Search SystemAll Datasheets Cannot Be Modified Without PermissionCopyright © Each Manufacturing Company。

IRF640B中文资料

IRF640B中文资料
元器件交易网
IRF640B/IRFS640B
November 2001
IRF640B/IRFS640B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Figure 1. On-Region Characteristics
1.0
0.8
V = 10V
GS
0.6
V = 20V GS
0.4
0.2
※ Note : T = 25℃ J
0.0
0
10
20
30
40

IRF系列场效应管参数代换

IRF系列场效应管参数代换

IRF系列场效应管参数代换IRF系列场效应管参数代换-电子元器件符号IRF系列 POWER MOSFET功率场效应管型号参数查询及代换带有"-"号的参数为P沟道场效应管,带有/的参数的为P沟道,N沟道双管封装在一起的场效应管,没注明的均为N沟道场效应管.型号漏极到源极电压静态漏源通态电阻漏极连续电流(TC=25℃) 总功率耗散(TC=25℃)封装换东芝型号供应商(V) (ohm)欧姆 (A) (W)IRF510 100 0.54 5.6 43 TO-220AB 2SK2399 IRIRF510A 100 0.4 5.6 33 TO-220AB 2SK2399 SamsungIRF510S 100 0.54 5.6 43 D2PAK 2SK2399 IRIRF511(R) 80 0.54 5.6 -TO-220AB 2SK2399 HarrisIRF512(R) 100 0.74 4.9 -TO-220AB 2SK2399 HarrisIRF513(R) 80 0.74 4.9 -TO-220AB 2SK2399 HarrisIRF520 100 0.27 9.2 60 TO-220AB 2SK2399 IRIRF520 100 0.27 10 -TO-220AB 2SK2399 STIRF520A 100 0.2 9.2 45 TO-220AB 2SK2399 SamsungIRF520FI 100 0.27 7 -TO-220FP 2SK2399 STIRF520N 100 0.2 9.5 47 TO-220AB 2SK2399 IRIRF520NS 100 0.2 9.5 47 D2PAK 2SK2399 IRIRF520S 100 0.27 9.2 60 D2PAK 2SK2399 IRIRF521(R) 80 0.27 9.2 -TO-220AB 2SK2399 HarrisIRF5210 -100 0.06 -35 150 TO-220AB -IRIRF5210S -100 0.06 -35 150 D2PAK -IRIRF522(R) 100 0.36 8 -TO-220AB -HarrisIRF523(R) 80 0.36 8 -TO-220AB 2SK2399 HarrisIRF530 100 0.16 14 88 TO-220AB 2SK2314 IRIRF530 100 0.16 16 -TO-220AB 2SK2314 STIRF5305 -55 0.06 -31 110 TO-220AB 2SJ349 IRIRF5305L -55 0.06 -31 110 TO-262 2SJ401 IRIRF5305S -55 0.06 -31 110 D2PAK 2SJ401 IRIRF530A 100 0.11 14 55 TO-220AB 2SK2314 Samsung IRF530FI 100 0.16 10 -TO-220FP 2SK2391 STIRF530N 100 0.11 15 60 TO-220AB 2SK2314 IRIRF530NS 100 0.11 15 63 D2PAK 2SK2789 IRIRF530S 100 0.16 14 88 D2PAK 2SK2789 IRIRF531(R) 80 0.16 14 -TO-220AB 2SK2314 HarrisIRF532(R) 100 0.23 12 -TO-220AB 2SK2399 HarrisIRF533(R) 80 0.23 12 -TO-220AB 2SK2314 HarrisIRF540 100 0.077 28 150 TO-220AB 2SK2314 IRIRF540 100 0.077 30 -TO-220AB 2SK2314 STIRF540A 100 0.052 28 107 TO-220AB 2SK2466 Samsung IRF540FI 100 0.077 16 -TO-220FP 2SK2391 STIRF540N 100 0.052 27 94 TO-220AB 2SK2466 IRIRF540NS 100 0.052 27 110 D2PAK 2SK2466 IRIRF540S 100 0.077 28 150 D2PAK 2SK2789 IRIRF541(R) 80 0.077 28 -TO-220AB 2SK2314 HarrisIRF542(R) 100 0.1 25 -TO-220AB 2SK2314 HarrisIRF543(R) 80 0.1 25 -TO-220AB 2SK2314 HarrisIRF550A 100 0.04 40 167 TO-220AB 2SK2466 Samsung IRF610 200 1.5 3.3 36 TO-220AB 2SK2381 IRIRF610A 200 1.5 3.3 38 TO-220AB 2SK2381 Samsung IRF610S 200 1.5 3.3 36 D2PAK 2SK2920 IRIRF611(R) 150 1.5 3.3 -TO-220AB 2SK2381 HarrisIRF612(R) 200 2.4 2.6 -TO-220AB 2SK2381 HarrisIRF613(R) 150 2.4 2.6 -TO-220AB 2SK2381 HarrisIRF614 250 2 2.7 36 TO-220AB 2SK2840 IRIRF614A 250 2 2.8 40 TO-220AB 2SK2840 SamsungIRF614S 250 2 2.7 36 D2PAK -IRIRF620 200 0.8 5.2 50 TO-220 AB 2SK2381 IR(三星彩电CS29D6N行管)IRF620 200 0.8 7 -TO-220AB 2SK2381 STIRF620A 200 0.8 5 47 TO-220AB 2SK2381 SamsungIRF620FI 200 0.8 4.3 -TO-220FP 2SK2381 STIRF620S 200 0.8 5.2 50 D2PAK 2SK2920 IRIRF621(R) 150 0.8 5 -TO-220AB 2SK2381 HarrisIRF6215 -150 0.29 -11 83 TO-220AB -IRIRF622(R) 200 1.2 4 -TO-220AB 2SK2381 HarrisIRF623(R) 150 1.2 4 -TO-220AB 2SK2381 HarrisIRF624 250 1.1 4.4 50 TO-220AB 2SK2840 IRIRF624A 250 1.1 4.1 49 TO-220AB 2SK2840 SamsungIRF624S 250 1.1 4.4 50 D2PAK -IRIRF625 250 1.1 3.8 -TO-220AB 2SK2840 HarrisIRF626 275 0.68 6.5 -TO-220AB -HarrisIRF627 275 1.1 3.8 -TO-220AB -HarrisIRF630 200 0.4 9 74 TO-220AB YTA630 IRIRF630A 200 0.4 9 72 TO-220AB YTA630 SamsungIRF630S 200 0.4 9 74 D2PAK 2SK2401 IRIRF631(R) 150 0.4 9 -TO-220AB 2SK2350 HarrisIRF632(R) 200 0.4 9 -TO-220AB YTA630 HarrisIRF633(R) 150 0.6 8 -TO-220AB 2SK2350 HarrisIRF634 250 0.45 8.1 74 TO-220AB 2SK2914 IRIRF634A 250 0.45 8.1 74 TO-220AB 2SK2914 SamsungIRF634S 250 0.45 8.1 74 D2PAK 2SK2598 IRIRF635 250 0.45 8.1 -TO-220AB 2SK2914 HarrisIRF636 275 0.34 13 -TO-220AB -HarrisIRF637 275 0.45 8.1 -TO-220AB -HarrisIRF640 200 0.18 18 125 TO-220AB YTA640 IRIRF640A 200 0.18 18 139 TO-220AB YTA640 Samsung IRF640S 200 0.18 18 125 D2PAK 2SK2401 IRIRF641(R) 150 0.18 18 -TO-220AB 2SK2382 HarrisIRF642(R) 200 0.18 18 -TO-220AB 2SK2382 HarrisIRF643(R) 150 0.22 16 -TO-220AB 2SK2382 HarrisIRF644 250 0.28 14 125 TO-220AB 2SK2508 IRIRF644A 250 0.28 14 139 TO-220AB 2SK2508 Samsung IRF644S 250 0.28 14 125 D2PAK 2SK2598 IRIRF645 250 0.28 14 -TO-220AB 2SK2508 HarrisIRF646 275 0.28 15 -TO-220AB -HarrisIRF647 275 0.28 14 -TO-220AB -HarrisIRF650A 200 0.085 28 156 TO-220AB -Samsung。

IRF640B

IRF640B

3500 3000 2500 2000 1500 1000 500
0 10-1
Ciss C
oss
C rss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
※ Notes : 1. VGS = 0 V 2. f = 1 MHz
100
IRF640B/IRFS640B
November 2001
IRF640B/IRFS640B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

IRF640 场效应管

IRF640 场效应管

Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
200 -
-
V
178 -
-
V
2
3
4
V
1
-
-
V
-
6
V
- 130 180 mΩ
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175
Mounting Base temperature, Tmb (C)
Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); VGS ≥ 10 V
CONDITIONS
EAS
Non-repetitive avalanche Unclamped inductive load, IAS = 6.2 A;
energy
tp = 720 µs; Tj prior to avalanche = 25˚C;
VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer
ID = 18 A; VDD = 160 V; VGS = 10 V
Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time

常用功率场效应管参数大全

常用功率场效应管参数大全

常用功率场效应管参数大全(word版可编辑修改)
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常用功率场效应管参数大全。

IRF系列高压MOS管

IRF系列高压MOS管

高压MOS管----IRF系列学习杂记2008-01-29 15:04:28 阅读2856 评论2 字号:大中小订阅IRF024 N-场效应60 17 60 TO-204AAIRF034 N-场效应60 30 90 TO-204AEIRF035 N-场效应60 25 90 TO-204AEIRF044 N-场效应60 30 150 TO-204AEIRF045 N-场效应60 30 150 TO-204AEIRF054 N-场效应60 30 180 TO-204AAIRF120 N-场效应100 8.0 40 TO-3IRF121 N-场效应60 8.0 40 TO-3IRF122 N-场效应100 7.0 40 TO-3IRF123 N-场效应60 7.0 40 TO-3IRF130 100V 14A 79W N-场效应IRF130(铁)NMOS GDS 100V14A79W75/45nS0.16 功放开关IRF131 N-场效应60V14A 75W TO-3IRF132 N-场效应100V12A75W TO-3IRF133 N-场效应60V12A 75W TO-3IRF140 N-场效应100V 27A 125W TO-204AEIRF141 N-场效应60V 27A 125W TO-204AEIRF142 N-场效应100V24A 125W TO-204AEIRF143 N-场效应60V 24A 125W TO-204AEIRF150 N-场效应100V 40A 150W TO-204AEIRF151 N-场效应60V 40A 150W TO-204AEIRF152 N-场效应100V 33A 150W TO-204AEIRF153 N-场效应60V33A 150W TO-204AEIRF15N65 650V 5A 80W MOSIRF16N65 650V 6A 80W MOSIRF220 N-场效应200V 5.0A 40W TO-3IRF221 N-场效应150V 5.0A 40W TO-3IRF223 N-场效应150V 4.0A 40W TO-3IRF224 N-场效应250V3.8A 40W TO-204AAIRF225 N-场效应250V 3.3A 40W TO-204AAIRF230 N-场效应200V 9.0A 75W TO-3IRF230(铁)NMOS GDS 200V9A75W50/40nS0.4 功放开关IRF231 N-场效应150V 9.0A 75W TO-3IRF232 N-场效应200V 8.0A 75W TO-3IRF233 N-场效应150V 8.0A 75W TO-3IRF234 N-场效应250V 8.1A 75W TO-204AAIRF235 N-场效应250V 6.5A 75W TO-204AAIRF240 N-场效应200V 18A 125W TO-204AEIRF241 N-场效应150V 18A 125W TO-204AEIRF242 N-场效应200V 16A 125W TO-204AEIRF243 N-场效应150V 16A 125W TO-204AEIRF244 N-场效应250V 14A 125W TO-204AAIRF245 N-场效应250V 13A 125W TO-204AAIRF250 N-场效应200V 30A 150W TO-204AEIRF251 N-场效应150V 30A 150W TO-204AEIRF252 N-场效应200V 25A 150W TO-204AEIRF253 N-场效应150V 25A 150W TO-204AEIRF254 N-场效应250V 22A 150W TO-204AEIRF255 N-场效应250V 20A 150W TO-204AEIRF2807 70V 78A 180W MOSIRF320 N-场效应400V 3.0A 40W TO-3IRF3205 55V 110A 200W MOSIRF321 N-场效应350V 3.0A 40W TO-3IRF322 N-场效应400V 2.5A 40W TO-3IRF323 N-场效应350V 2.5A 40W TO-3IRF330 N-场效应400V 5.5A 75W TO-3IRF332 N-场效应400V 4.5A 75W TO-3IRF333 N-场效应350V 4.5A 75W TO-3IRF340 N-场效应400V 10A 125W TO-3IRF341 N-场效应350V 10A 125W TO-3IRF342 N-场效应400V 8.0A 125W TO-3IRF343 N-场效应350V 8.0A 125W TO-3IRF350 N-场效应400V 15A 150W TO-3IRF351 N-场效应350V 15A 150W TO-3IRF352 N-场效应400V 13A 150W TO-3IRF353 N-场效应350V 13A 150W TO-3IRF360 N-场效应400V 25A 300W TO-204AEIRF362 N-场效应400V 22A 300W TO-204AEIRF3710 100V 46A 150W MOSIRF420 N-场效应500V 2.5A 50W TO-3IRF421 N-场效应450V 2.5A 50W TO-3IRF422 N-场效应500V 2.0A 50W TO-3IRF423 N-场效应450V 2.0A 50W TO-3IRF430 N-场效应500V 4.5A 75W TO-3IRF431 N-场效应450V 4.5A 75W TO-3IRF432 N-场效应500V 4.0A 75W TO-3IRF433 N-场效应450V 4.0A 75W TO-3IRF440 N-场效应500V 8.0A 125W TO-3IRF440(铁)NMOS GDS 500V8A125W35/30nS0.85 功放开关IRF441 N-场效应450V 8.0A 125W TO-3IRF442 N-场效应500V 7.0A 125W TO-3IRF443 N-场效应450V 7.0A 125W TO-3IRF448 N-场效应500V 9.6A 130W TO-204AAIRF449 N-场效应500V 8.6A 130W TO-204AAIRF450 N-场效应500V 13A 150W TO-3IRF450(铁)NMOS GDS 500V13A125W66/60nS0.4 功放开关IRF451 N-场效应450V 13A 150W TO-3IRF452 N-场效应500V 12A 150W TO-3IRF453 N-场效应450V 12A 150W TO-3IRF460 N-场效应500V 21A 300W TO-204AEIRF460(铁)NMOS GDS 500V 21AW66/60nS0.4 功放开关IRF462 N-场效应500V 19A 300W TO-204AEIRF48 N-场效应60V50A190W TO-220ABIRF510 N-场效应100V 5.6A 43W TO-220ABIRF511 N-场效应80V 5.6A 43W TO-220ABIRF512 N-场效应100V 4.9A 43W TO-220ABIRF513 N-场效应80V 4.9A 43W TO-220ABIRF520 N-场效应100V 9.2A 60W TO-220ABIRF521 N-场效应80V 9.2A 60WTO-220ABIRF522 N-场效应100V 8A 60W TO-220ABIRF523 N-场效应80V 8A 60W TO-220ABIRF530 N-场效应100V 14A 79W TO-220ABIRF530 N-FET100V14A79W 51/36ns0.18ohmIRF530 NMOS GDS 100V14A79W51/36nS0.18 功放开关IRF531 N-场效应80V 14A 79W TO-220ABIRF532 N-场效应100V 12A 79W TO-220ABIRF533 N-场效应80V 12A 79W TO-220ABIRF540 NMOS+D GDS 100V28A150W110/75nS0.077 功放开关IRF540A NMOS GDS 100V28A107W Id m=110A/0.052Ω 功放开关IRF541 NMOS GDS 80V28A150W110/75nS0.077 功放开关IRF542 N-场效应100V 25A 150W TO-220ABIRF543 N-场效应80V 25A 150W TO-220ABIRF610 NMOS GDS 200V3.3A43W26/13nS1.5 功放开关IRF611 N-场效应150V 3.3A 43W TO-220ABIRF612 N-场效应200V 2.6A 43W TO-220ABIRF614 N-场效应250V 2.0A 20W TO-220ABIRF615 N-场效应250V 1.6A 20W TO-220ABIRF620 N-场效应200V 5A 40W TO-220ABIRF621 N-场效应150V 5A 40W TO-220ABIRF622 N-场效应200V 4A 40W TO-220ABIRF623 N-场效应150V 4A 40W TO-220ABIRF624 N-场效应250V 3.8A 40W TO-220ABIRF625 N-场效应250V 3.3A 40W TO-220ABIRF630 NMOS GDS 200V9A75W50/40nS0.4 功放开关IRF631 N-场效应150V 9A 75W TO-220ABIRF632 N-场效应200V 8A 75W TO-220ABIRF633 N-场效应150V 8A 75W TO-220ABIRF634 N-场效应250V 8.1A 75W TO-220ABIRF635 N-场效应250V 6.5A 75W TO-220ABIRF640 N-FET GDS 200V18A125W 77/54ns0.18ohm功放开关IRF641 N-场效应150V 18A 125W TO-220ABIRF642 N-场效应200V 16A 125W TO-220ABIRF643 N-场效应150V 16A 125W TO-220ABIRF644 N-场效应250V 14A 125W TO-220ABIRF645 N-场效应250V 13A 125W TO-220ABIRF710 N-场效应400V 2.0A 36W TO-220ABIRF711 N-场效应350V 2.0A 36W TO-220ABIRF712 N-场效应400V 1.7A 36W TO-220ABIRF713 N-场效应350V 1.7A 36W TO-220ABIRF720 N-场效应GDS 400V 3.3A 50W TO-220AB 20nS1.8功放开关IRF721 N-场效应350V 3.3A 50W TO-220ABIRF722 N-场效应400V 2.8A 50W TO-220ABIRF723 N-场效应350V 2.8A 50W TO-220ABIRF730 NMOS GDS 400V5.5A75W29/24nS1.0 功放开关IRF732 N-场效应400V 4.5A 74W TO-220ABIRF733 N-场效应350V 4.5A 74W TO-220ABIRF740 N-FET400V10A125W 41/36ns0.55ohm 功放开关IRF741 N-场效应350V 10A 125W TO-220ABIRF742 N-场效应400V 8.3A 125W TO-220ABIRF743 N-场效应350V 8.3A 125W TO-220ABIRF820 N-场效应500V 2.5A 50W TO-220ABIRF821 N-场效应450V 2.5A 50W TO-220ABIRF822 N-场效应500V 2.2A 50W TO-220ABIRF823 N-场效应450V 2.2A 50W TO-220ABIRF830 NMOS GDS 500V4.5A75W23/23nS1.5 功放开关IRF831 N-场效应450V 4.5A 74W TO-220ABIRF832 N-场效应500V 4.0A 74W TO-220ABIRF833 N-场效应450V 4.0A 74W TO-220ABIRF840 NMOS GDS 500V8A125W35/33nS0.85 功放开关IRF841 N-场效应450V 8.0 125W TO-220ABIRF842 N-场效应500V 7.0 125W TO-220ABIRF843 N-场效应450V 7.0 125W TO-220ABIRF9130 P-场效应100V-12A 75W TO-3IRF9131 P-场效应60V-12A 75W TO-3IRF9132 P-场效应100V-10A 75W TO-3IRF9133 P-场效应60V –10A 75W TO-3IRF9140 P-场效应100V –19A 125W TO-3IRF9141 P-场效应60V –19A 125W TO-3IRF9142 P-场效应100V –15A 125W TO-3IRF9143 P-场效应60V –15A 125W TO-3IRF9230 P-场效应200V6.5A 75W TO-3IRF9231 P-场效应150V6.5A 75W TO-3IRF9232 P-场效应200V5.5A 75W TO-3IRF9233 P-场效应150V5.5A 75W TO-3IRF9240 P-场效应200V –11A 125W TO-3IRF9241 P-场效应150V –11A 125W TO-3IRF9242 P-场效应200V9.0A 125W TO-3IRF9243 P-场效应150V9.0A 125W TO-3IRF9510 P-场效应100V3.0A 20W TO-220ABIRF9511 P-场效应60V3.0A 20W TO-220ABIRF9512 P-场效应100V2.5A 20W TO-220ABIRF9513 P-场效应60V2.5A 20W TO-220ABIRF9520 P-场效应100V6.0A 40W TO-220ABIRF9521 P-场效应60V6.0A 40W TO-220ABIRF9522 P-场效应100V5.0A 40W TO-220ABIRF9523 P-场效应60V5.0A 40W TO-220ABIRF9530 PMOS GDS 100V12A75W140/140nS0.4 功放开关IRF9531 PMOS GDS 60V12A75W140/140S0.3 功放开关IRF9532 P-场效应100V –10A 75W TO-220ABIRF9533 P-场效应60V –10A 75W TO-220ABIRF9540 P-场效应100V –19A 125W TO-220ABIRF9541 PMOS GDS 60V19A125W140/141nS0.2 功放开关IRF9542 P-场效应100V –15A 125W TO-220ABIRF9543 P-场效应60V –15A 125W TO-220ABIRF9610 PMOS GDS 200V1A20W25/15nS2.3 功放开关IRF9611 P-场效应150V1.75A 20W TO-220ABIRF9612 P-场效应200V1.5A 20W TO-220ABIRF9613 P-场效应150V1.5A 20W TO-220ABIRF9620 P-场效应200V3.5A 40W TO-220ABIRF9621 P-场效应150V3.5A 40W TO-220ABIRF9622 P-场效应200V3.0A 40W TO-220ABIRF9623 P-场效应150V3.0A 40W TO-220ABIRF9630 PMOS GDS 200V6.5A75W100/80nS0.8 功放开关IRF9631 P-场效应150V 6.5A 75W TO-220ABIRF9632 P-场效应200V 5.5A 75W TO-220ABIRF9633 P-场效应150V 5.5A 75W TO-220ABIRF9634 P-场效应250V 3.4A 33W TO-220ABIRF9640 P-FET200V11A125W15/12ns0.5ohmIRF9641 P-场效应150V 11A 125W TO-220ABIRF9642 P-场效应200V 9A 125W TO-220ABIRF9643 P-场效应150V 9A 125W TO-220ABIRF9Z30 50V 18A 74W MOSIRF9Z34 60V 18A 74W MOSIRFBC20 NMOS GDS 600V2.2A50W15/30nS4.4 功放开关IRFBC30 NMOS GDS 600V3.6A74W20/21nS2.2 功放开关IRFBC40 NMOS GDS 600V6.2A125W27/30nS1.2 功放开关IRFBE30 NMOS GDS 800V2.8A75W15/30nS3.5 功放开关IRFD113 NMOS GDS 60V0.8A1W0.8 功放开关IRFD120 NMOS GDS 100V1.3A1W70/70nS0.3 功放开关IRFD123 NMOS GDS 80V1.1A1W70/70nS0.3 功放开关IRFD9120 PMOS GDS 100V1A1W0.6 功放开关IRFI730 NMOS GDS 400V4A32W1.0 功放开关IRFI744 NMOS GDS 400V4A32W1.0 功放开关IRFP054 NMOS GDS 60V65A180W0.022 功放开关IRFP064 60V 70A 300W MOSIRFP140 NMOS GDS 100V29150W0.85 功放开关IRFP150 NMOS GDS 100V40A180W210/140nS0.55 功放开关IRFP240 NMOS GDS 200V19A150W0.18 功放开关IRFP250 NMOS GDS 200V33A180W180/120nS0.08 功放开关IRFP254 250V 23A 180W MOSIRFP260 200V 46A 280W MOSIRFP264 250V 38A 280W MOSIRFP340 NMOS GDS 400V10A150W0.55 功放开关IRFP350 NMOS GDS 400V16A180W77/71nS0.3 功放开关IRFP353 NMOS GDS 350V14A180W77/71XnS0.4 功放开关IRFP360 NMOS GDS 400V23A250W140/99nS0.2 功放开关IRFP440 NMOS GDS 500V8.1A150W0.85 功放开关IRFP450 NMOS GDS 500V14A180W66/60nS0.4 功放开关IRFP460 NMOS GDS 500V20A250W120/98nS0.27 功放开关IRFP9140 PMOS GDS 100V19A150W100/70nS0.2 功放开关IRFP9240 PMOS GDS 200V12A150W68/57nS0.5 功放开关IRFPC40 600V 6.5A 150W MOSIRFPC50 600V 10A 180W MOSIRFPC60 600V 13A 200W MOSIRFPE40 800V 5.3A 150W MOSIRFPF40 NMOS GDS 900V4.7A150W2.5 功放开关IRFPF50 900V 6.8A 180W MOSIRFPG42 NMOS GDS 1000V3.9A150W4.2 功放开关IRFPG50 1000V 6.1A 180W MOSIRFS630B NMOS GDS 200V9A38W50/40nS0.4 =IRF630 IRFS634B NMOS GDS 250V8.1A38W50/40nS0.4 =IRF634 IRFS640B NMOS GDS 200V18A43W50/40nS0.4 =IRF640 IRFS9630 PMOS GDS 200V6.5A75W100/80nS0.8 功放开关IRFU020 NMOS GDS 50V15A42W 83/39nS0.1 功放开关IRFZ34 N-FET60V30A90W110/80ns0.05ohmIRFZ44 60V 35A 150W MOSIRFZ48 60V 50A 250W MOS。

常用高清行管和大功率三极管主要参数表

常用高清行管和大功率三极管主要参数表

3. 行偏转线圈或行输出变压器局部短路造成行负责过重
常见场输出集成电路击穿导致行偏转线圈或行输出变压器绝缘性能下降,产生局部短路、行输出逆程电容漏电等。如果保护电路性能不完善,则会引起行管过流损坏。海信高清电视由于电源保护措施比较完善,所以这种情况不多见,表现出来的现象是行一开机就停。
*D1880 70 1500 8 行管
*D1881 70 1500 10 行管
D1886 70 1500 8 行管
D1887 70 1500 10 行管
*D2125 50 1500 5 行管
*D870 50 1500 5 行管
功率Pcm/W 反压BVCBO 电流ICM/A (*带阻尼)
C5858 1700V 22A 200W 34寸高清彩电
C5859 1700V 23A 210W 43寸背投彩电
*D1396 50 1500 2 行管
*D1398 50 1500 5 行管
D1402 120 1500 5 电源开关管
D1403 120 1500 6 电源开关管
*D1426 80 1500 3.5 行管
*D1427 80 1500 5 行管
*D1428 80 1500 6 行管
常用高清行管和大功率三极管主要参数表电子基础学
高清彩电行管损坏的原因及代换
现在,大屏幕彩色电视大都是数字高清,原来50Hz的场扫描频率接近人眼感知频闪的临界点,所以高清电视都是提高扫描频率来提高图像的清晰度,即将场扫描提高到100Hz或是60Hz逐行,这样就会使行扫描的频率提高一倍,自然行输出管的开关速度和功耗都会随之增加,普通的行输出管已经不能胜任,要采用性能更好的大功率三极管。目前采用的行管有:C5144、C5244、J6920、C5858、C5905等,这些行输出管的耐压都在1500V以上,电流多大于20A,但是由于其功耗比较大,损坏率还是比较高。归纳起来,其损坏的原因一般有以下六种。

IRF640中文资料_数据手册_参数

IRF640中文资料_数据手册_参数
一站式配套, 解决物料烦恼,万联芯城-以良心做好良芯,专为终端工厂企业客户 提供电子元器件一站式配套报价服务,只需提交BOM物料清单, 我们将为您报出一个满意的价格,电子元器件配套采购,专为客户 节省成本,满足客户的多样化物料需求,点击进入万联芯城。
功率mosfitirf640,sihf640vishay硅氧特性•动态dv/dt额定值•重复雪崩额定值•快速切换•易于并联•简单驱动要求•无铅(pb)-可用描述 vishay的第三代功率mosfet为设计者提供最佳组合在快速切换、坚固耐用的设备设计、低电阻和成本效益方面,TO-220封装在功率耗 散水平为50 W左右的所有商业工业应用中普遍首选。TO-220的低热阻和低封装成本有助于其Wi-220全行业不接受

IRF640B(中英文)

IRF640B(中英文)
(Note 1)
72
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
Cres =Cgd
---(Note 4, 5)
20 145 145 110 45 6.5 22
50 300 300 230 58 ---
ns ns ns ns nC nC nC
----
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
测试条件
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
漏源二极管特性和最大值乯
----(Note 4)
---195 1.47
18 72 1.5 ---
A A V ns µC
漏源二极管正向压降 反向恢复时间 反向恢复电荷
--
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.16mH, IAS = 18A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 18A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature

IRF640PBF功放

IRF640PBF功放

Power MOSFETIRF640, SiHF640Vishay SiliconixFEATURES•Dynamic dV/dt Rating •Repetitive Avalanche Rated •Fast Switching •Ease of Paralleling •Simple Drive Requirements •Lead (Pb)-free AvailableDESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 50 V, starting T J = 25 °C, L = 2.7 mH, R G = 25 Ω, I AS = 18 A (see fig. 12).c.I SD ≤ 18 A, dI/dt ≤ 150 A/µs, V DD ≤ V DS , T J ≤ 150 °C.d. 1.6 mm from case.PRODUCT SUMMARYV DS (V)200R DS(on) (Ω)V GS = 10 V0.18Q g (Max.) (nC)70Q gs (nC)13Q gd (nC)39ConfigurationSingleTO-220GDSORDERING INFORMATIONPackage TO-220Lead (Pb)-free IRF640PbF SiHF640-E3 SnPbIRF640SiHF640ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedARAMETER SYMBOLLIMIT UNIT Drain-Source Voltage V DS200VGate-Source Voltage V GS ± 20 Continuous Drain Current V GS at 10 VT C = 25 °C I D18A T C = 100 °C11Pulsed Drain Current a I DM 72Linear Derating Factor1.0W/°C Single Pulse Avalanche Energy b E AS 580mJ Repetitive Avalanche Current a I AR 18 A Repetitive Avalanche Energy a E AR 13mJ Maximum Power Dissipation T C = 25 °CP D 125WPeak Diode Recovery dV/dt cdV/dt 5.0V/ns Operating Junction and Storage Temperature Range T J , T stg- 55 to + 150°C Soldering Recommendations (Peak Temperature)for 10 s 300d Mounting Torque6-32 or M3 screw10 lbf · in 1.1N · m * Pb containing terminations are not RoHS compliant, exemptions may applyIRF640, SiHF640Vishay SiliconixNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSARAMETER SYMBOL TY.MAX.UNITMaximum Junction-to-Ambient R thJA -62°C/W Case-to-Sink, Flat, Greased Surface R thCS 0.50-Maximum Junction-to-Case (Drain)R thJC- 1.0IRF640, SiHF640Vishay SiliconixTYPICAL CHARACTERISTICS 25 °C, unless otherwise notedFig. 1 - Typical Output Characteristics, T C = 25 °CFig. 2 - Typical Output Characteristics, T C = 150 °CFig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. TemperatureIRF640, SiHF640 Vishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating AreaIRF640, SiHF640Vishay SiliconixFig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsIRF640, SiHF640Vishay SiliconixFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test CircuitIRF640, SiHF640Vishay SiliconixFig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?91036.Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.。

IRF640_简介

IRF640_简介

IRF640, RF1S640, RF1S640SM Rev. B
IRF640, RF1S640, RF1S640SM
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRF640, RF1S640, RF1S640SM 200 200 18 11 72 ±20 125 1.0 580 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
S
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
JEDEC TO-263AB
GATE SOURCE
DRAIN (FLANGE)
JEDEC TO-262AA
SOURCE DRAIN GATE
DRAIN (FLANGE)
©2001 Fairchild Semiconductor Corporation
D LD
TEST CONDITIONS ID = 250µA, VGS = 0V, (Figure 10) VGS = VDS , ID = 250µA VDS = Rated BVDSS , VGS = 0V VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX , VGS = 10V (Figure 7) VGS = ± 20V ID = 10A, VGS = 10V (Figures 8, 9) VDS ≥ 10V, ID = 11A (Figure 12) VDD = 100V, ID ≈ 18A, RGS = 9.1Ω , RL = 5.4Ω, MOSFET Switching Times are Essentially Independent of Operating Temperature
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Power MOSFETIRF640, SiHF640Vishay SiliconixFEATURES•Dynamic dV/dt Rating •Repetitive Avalanche Rated •Fast Switching •Ease of Paralleling •Simple Drive Requirements •Lead (Pb)-free AvailableDESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 50 V, starting T J = 25 °C, L = 2.7 mH, R G = 25 Ω, I AS = 18 A (see fig. 12).c.I SD ≤ 18 A, dI/dt ≤ 150 A/µs, V DD ≤ V DS , T J ≤ 150 °C.d. 1.6 mm from case.PRODUCT SUMMARYV DS (V)200R DS(on) (Ω)V GS = 10 V0.18Q g (Max.) (nC)70Q gs (nC)13Q gd (nC)39ConfigurationSingleTO-220GDSORDERING INFORMATIONPackage TO-220Lead (Pb)-free IRF640PbF SiHF640-E3 SnPbIRF640SiHF640ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS200VGate-Source Voltage V GS ± 20 Continuous Drain Current V GS at 10 VT C = 25 °C I D18A T C = 100 °C11Pulsed Drain Current a I DM 72Linear Derating Factor1.0W/°C Single Pulse Avalanche Energy b E AS 580mJ Repetitive Avalanche Current a I AR 18 A Repetitive Avalanche Energy a E AR 13mJ Maximum Power Dissipation T C = 25 °CP D 125WPeak Diode Recovery dV/dt cdV/dt 5.0V/ns Operating Junction and Storage Temperature Range T J , T stg- 55 to + 150°C Soldering Recommendations (Peak Temperature)for 10 s 300d Mounting Torque6-32 or M3 screw10 lbf · in 1.1N · m * Pb containing terminations are not RoHS compliant, exemptions may applyIRF640, SiHF640Vishay SiliconixNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSARAMETER SYMBOL TY.MAX.UNITMaximum Junction-to-Ambient R thJA -62°C/W Case-to-Sink, Flat, Greased Surface R thCS 0.50-Maximum Junction-to-Case (Drain)R thJC- 1.0IRF640, SiHF640Vishay SiliconixTYPICAL CHARACTERISTICS 25 °C, unless otherwise notedFig. 1 - Typical Output Characteristics, T C = 25 °CFig. 2 - Typical Output Characteristics, T C = 150 °CFig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. TemperatureIRF640, SiHF640 Vishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating AreaIRF640, SiHF640Vishay SiliconixFig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsIRF640, SiHF640Vishay SiliconixFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test CircuitIRF640, SiHF640Vishay Siliconix Array Fig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see /ppg?91036.Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.。

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