01-Efficient silicon heterojunction solar cells combining a PEDOT：PSS Hole-collector-叶继春

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(完整版)光伏行业英文词汇

光伏行业英文词汇Cell 电池Crystalline silicon 晶体硅Photovoltaic 光伏bulk properties 体特性at ambient temperature 在室温下wavelength 波长absorption coefficient吸收系数electron-hole pairs 电子空穴对photon 光子density 密度defect 缺陷surface 表面electrode 电极p－type for hole extraction p 型空穴型n－type for electron extraction n 型电子型majority carriers 多数载流子minority carriers 少数载流子surface recombination velocity （SRV）表面复合速率back surface field（BSF）背场at the heavily doped regions 重掺杂区saturation current density Jo 饱和电流密度thickness 厚度contact resistance 接触电阻concentration 浓度boron 硼Gettering techniques 吸杂nonhomogeneous 非均匀的solubility 溶解度selective contacts 选择性接触insulator 绝缘体oxygen 氧气hydrogen 氢气Plasma enhanced chemical vapor deposition PECVDInterface 界面The limiting efficiency reflection 反射light- trapping 光陷intrinsic material 本征材料bifacial cells 双面电池monocrystalline 单晶float zone material FZ －Si Czochralski silicon Cz －Si industrial cells 工业电池a high concentration of oxygen 高浓度氧Block or ribbon 块或硅带Crystal defects 晶体缺陷grain boundaries 晶界dislocation 位错solar cell fabrication太阳能电池制造impurity 杂质P gettering effect 磷吸杂效果Spin －on 旋涂supersaturation 过饱和dead layer 死层electrically inactive phosphorus 非电活性磷interstitial 空隙the eutectic temperature 共融温度boron －doped substrate 掺硼基体passivated emitter and rear locally diffused cells PERL 电池losses 损失the front surface 前表面metallization techniques 金属化技术metal grids 金属栅线laboratory cells 实验室电池the metal lines 金属线selective emitter 选择性发射极photolithographic 光刻gradient 斜度precipitate 沉淀物localized contacts 局部接触point contacts 点接触passivated emitter rear totally diffused PERTsolder 焊接bare silicon 裸硅片high refraction index 高折射系数reflectance 反射encapsulation 封装antireflection coating ARC 减反射层an optically thin dielectric layer 光学薄电介层interference effects 干涉效应texturing制绒alkaline solutions 碱溶液etch 刻蚀/ 腐蚀anisotropically 各向异性地plane 晶面pyramids 金字塔 a few microns 几微米etching time and temperature 腐蚀时间和温度manufacturing process 制造工艺process flow 工艺流程high yield高产量starting material 原材料solar grade 太阳级a pseudo －square shape 单晶型状saw damage removal 去除损伤层fracture 裂纹acid solutions 酸溶液immerse 沉浸tank 槽texturization 制绒极限效率microscopic pyramids 极小的金字塔size 尺寸大小hinder the formation of the contacts 阻碍电极的形成the concentration ，the temperature and the agitation of the solution 溶液的浓度，温度和搅拌the duration of the bath 溶液维持时间alcohol 酒精improve 改进增加homogeneity 同质性wettability 润湿性phosphorus diffusion 磷扩散eliminate adsorbed metallic impurities 消除吸附的金属杂质quartz furnaces 石英炉quartz boats 石英舟quartz tube 石英炉管bubbling nitrogen through liquidP0CL3小氮belt furnaces 链式炉back contact cell 背电极电池reverse voltage 反向电压reverse current 反向电流amorphous glass of phospho －silicates 非晶玻璃diluted HF 稀释HF溶液junction isolation 结绝缘coin －stacked 堆放barrel －type reactors 桶状反应腔fluorine 氟fluorine compound 氟化物simultaneously 同时地high throughput 高产出ARC deposition 减反层沉积Titanium dioxide Ti02Refraction index 折射系数Encapsulated cell 封装电池Atmospheric pressure chemical vapor deposition APCVD Sprayed from a nozzle 喷嘴喷雾Hydrolyze 水解Spin －on 旋涂Front contact print 正电极印刷The front metallization 前面金属化Low contact resistance to silicon 低接触电阻Low bulk resistivity 低体电阻率Low line width with high aspect ratio 低线宽高比Good mechanical adhesion 好机械粘贴solderability 可焊性screen printing 丝网印刷comblike pattern 梳妆图案finger 指条bus bars 主栅线viscous 粘的solvent 溶剂back contact print 背电极印刷both silver and aluminum 银铝form ohmic contact 形成欧姆接触warp 弯曲cofiring of metal contacts 电极共烧organic components of the paste 浆料有机成分burn off 烧掉sinter 烧结perforate 穿透testing and sorting 测试分选I-V curve I-V 曲线Module 组件Inhomogeneous 不均匀的Gallium 镓Degradation 衰减A small segregation coefficient 小分凝系数Asymmetric 不对称的High resolution 高分辨率Base resistivity 基体电阻率The process flow 工艺流程Antireflection coating 减反射层Cross section of a solar cell 太阳能电池横截面Dissipation 损耗Light －generated current 光生电流Incident photons 入射光子The ideal short circuit flow 理想短路电路The depletion region 耗尽区Quantum efficiency 量子效率Blue response 蓝光效应Spectral response 光谱响应Light －generated carriers 光生载流子Forward bias 正向偏压Simulation 模拟Equilibrium 平衡Superposition 重合The fourth quadrant 第四象限The saturation current 饱和电流Io Fill factor 填充因子FF Graphically 用图象表示The maximum theoretical FF 理论上Empirically 经验主义的Normalized Voc 规范化VocThe ideality factor n －factor 理想因子Terrestrial solar cells 地球上的电池At a temperature of 25C 25 度下Under AM1.5 conditions 在AM1.5环境下Efficiency is defined as XX 定义为Fraction 分数Parasitic resistances 寄生电阻Series resistance 串联电阻Shunt resistance 并联电阻The circuit diagram 电路图Be sensitive to temperature 易受温度影响The band gap of a semiconductor 半导体能隙The intrinsic carrier concentration 本征载流子的浓度Reduce the optical losses 减少光损Deuterated silicon nitride 含重氢氮化硅Buried contact solar cells BCSCPorous silicon PS 多孔硅Electrochemical etching 电化学腐蚀Screen printed SP 丝网印刷A sheet resistance of 45-50 ohm/sq 45 到50 方块电阻The reverse saturation current density Job 反向饱和电流密度Destructive interference 相消干涉Surface textingInverted pyramid 倒金字塔Four point probe 四探针Saw damage etchAlkaline 碱的Cut groove 开槽Conduction band 导带Valence band 价带B and O simultaneously in silicon 硼氧共存Iodine/methanol solution 碘酒/ 甲醇溶液Rheology 流变学Spin －on dopants 旋涂掺杂Spray －on dopants 喷涂掺杂The metallic impurities 金属杂质One slot for two wafers 一个槽两片Throughput 产量A standard POCL3 diffusion 标准POCL矿散Back－to －back diffusion 背靠背扩散Heterojunction with intrinsic thin －layer HIT 电池Refine 提炼Dye sensitized solar cell 染料敏化太阳电池Organic thin film solar cell 有机薄膜电池Infra red 红外光Unltra violet 紫外光Parasitic resistance 寄生电阻Theoretical efficiency 理论效率Busbar 主栅线Kerf loss 锯齿损失Electric charge 电荷Covalent bonds 共价键The coefficient of thermal expansion (CTE) 热膨胀系数Bump 鼓泡Alignment 基准Fiducial mark 基准符号Squeegee 橡胶带Isotropic plasma texturing 各向等离子制绒Block-cast multicrystalline silicon 整铸多晶硅Parasitic junction removal 寄生结的去除Iodine ethanol 碘酒Deionised water 去离子水Viscosity 粘性Mesh screen 网孔Emulsion 乳胶Properties of light 光特性Electromagnetic radiation 电磁辐射The visible light 可见光The wavelength ，denoted by R 用R 表示波长An inverse relationship between and ..................... given by theequation ：相反关系，可用方程表示Spectral irradiance 分光照度...... i s show n in the figure below. Directly convert electricity into sunlight 直接将电转换成光Raise an electron to a higher energy state 电子升入更高能级External circuit 外电路Meta-stable 亚稳态Light-generated current 光生电流Sweep apart by the electric field Quantum efficiency 量子效率The fourth quadrant 第四象限The spectrum of the incident light 入射光谱The AM1.5 spectrumThe FF is defined as the ratio of to Graphically 如图所示Screen-printed solar cells 丝网印刷电池Phosphorous diffusion 磷扩散A simple homongeneousdiffusion 均匀扩散Blue response 蓝光相应Shallow emitter 浅结Commercial production 商业生产Surface texturing to reduce reflection 表面制绒Etch pyramids on the wafer surface with a chemical solutionCrystal orientationTitanium dioxide TiO2PasteInorganic 无机的Glass 玻璃料DopantCompositionParticle size DistributionEtch SiNxContact pathSintering aidAdhesion 黏合性Ag powderMorphology 形态CrystallinityGlass effect on Ag/Si interface Reference cellOrganicResin 树脂Carrier 载体Rheology 流变性Printability 印刷性Aspect ratio 高宽比Functional groupMolecular weightAdditives 添加剂Surfactant 表面活性剂Thixotropic agent 触变剂Plasticizer 可塑剂Solvent 溶剂Boiling pointVapor pressure 蒸汽压Solubility 溶解性Surface tension 表面张力Solderability Viscosity 黏性Solids contentFineness of grind ，研磨细度Dried thicknessFired thicknessDrying profilePeak firing temp300 mesh screenEmulsion thickness 乳胶厚度StorageShelf life 保存期限Thinning 稀释Eliminate Al bead formation 消除铝珠Low bowingWet depositPattern design: 100um*74 太阳电池solar cell单晶硅太阳电池single crystalline silicon solar cell 多晶硅太阳电池so multi crystalline silicon solar cell 非晶硅太阳电池amorphous silicon solar cell 薄膜太能能电池Thin-film solar cell多结太阳电池multijunction solar cell 化合物半导体太阳电池compound semiconductor solar cell 用化合物半导体材料制成的太阳电池带硅太阳电池silicon ribbon solar cell光电子photo-electron短路电流short-circuit current (Isc)开路电压open-circuit voltage (Voc)最大功率maximum power (Pm)最大功率点maximum power point最佳工作点电压optimum operating voltage (Vn)最佳工作点电流optimum operating curre nt (In)填充因子fill factor(curve factor)曲线修正系数curve correct ion coefficie nt太阳电池温度solar cell temperature 串联电阻series resista nee并联电阻shunt resista nee转换效率cell efficiency暗电流dark current暗特性曲线dark characteristic curve光谱响应spectral response(spectral sen sitivity)太阳电池组件module(solar cell module)隔离二极管blocking diode旁路二极管bypass (shunt) diode组件的电池额定工作温度NOCT ( nominal operati ng cell temperature短路电流的温度系数temperature coefficie nts of Isc开路电压的温度系数temperature coefficie nts of Voc峰值功率的温度系数temperature coefficie nts of Pm组件效率Module efficiency峰瓦watts peak额定功率rated power额定电压rated voltage额定电流rated current太阳能光伏系统solar photovoltaic (PV) system并网太阳能光伏发电系统Grid-C onn ected PV system独立太阳能光伏发电系统Sta nd alone PV system太阳能控制器solar controller逆变器inverter孤岛效应islanding逆变器变换效率inv erter efficie ncy方阵(太阳电池方阵)array ( solar cell array)子方阵sub-array (solar cell sub-array)充电控制器charge controller直流/直流电压变换器DC/DCcon verter(i nverter)直流/交流电压变换器DC/ACcon verter(i nverter)电网grid太阳跟踪控制器sun-tracking ontroller 并网接口utility interface 光伏系统有功功率active power of PVpower station 光伏系统无功功率reactive power ofPV power station 光伏系统功率因数power factor of PVpower station公共连接点point of common coupling 接线盒junction box 发电量powergeneration 输出功率output power 交流电Alternating current 断路器Circuitbreaker 汇流箱Combiner box 配电箱Distribution box 电能表Supply meter 变压器Transformer 太阳能光伏建筑一体化Building-integrated PV (BIPV) 辐射radiation太阳辐照度Solar radiation 散射辐照(散射太阳辐照)量diffuseirradiation(diffuse insolation)直射辐照direct irradiation (direct insolation)irradiance (solar global irradiance) 辐射计radiometer 方位角Azimuth angle 倾斜角Tilt angle 太阳常数solar constant 大气质量(AM) air mass 太阳高度角solar elevation angle 标准太阳电池standard solar cell(reference solar cel)l 太阳模拟器solar simulator 太阳电池的标准测试条件为：环境温度25i2C，用标准测量的光源辐照度为1000W/m2 并且有标准的太阳光谱辐照度分布。

2022年上海大学芯片论文

2022年上海大学芯片论文近日，微电子学院集成光子芯片团队在硅基偏振不敏感光子滤波器研究上取得进展，成果被国际知名光学期刊《Optics Express》接收发表，题为“Demonstration of polarization-insensitive optical filters on silicon photonics platform”。

微电子学院2020级硕士研究生叶凯琳为第一作者，团队负责人胡挺教授为通讯作者，上海大学为第一署名单位。

绝缘体上硅（Silicon On Insulator, SOI）凭借其与成熟的互补金属氧化物半导（ComplementaryMetal-Oxide-Semiconductor, CMOS）工艺兼容的优势，成为主流的集成光子芯片材料。

虽然SOI 中硅和二氧化硅之间的高折射率差有利于实现结构紧凑的光子器件，但高折射率差光波导具有很大的双折射效应，这导致器件对偏振十分敏感。

光子滤波器是实现各种集成光子回路与系统的关键器件之一，在SOI上实现偏振不敏感的光子滤波器（polarization-insensitive optical filter, PIOF）是非常重要和有意义的。

本论文对偏振不敏感的光子滤波器进行了深入研究，采用偏振分集与微环谐振滤波相结合的方案，提出了一种新的结构紧凑的设计，在SOI上实现了偏振不敏感的光子滤波器。

芯片采用CMOS兼容工艺在8英寸SOI晶圆上完成制作。

测试结果表明器件在C波段实现了“箱型”滤波谱线，具有~0.15 nm的3 dB带宽和大于30 dB的高消光比。

该工作为在SOI上构建偏振不敏感的集成光子回路与系统提供了一种潜在的解决方案。

扩展：上海大学（Shanghai University），简称“上大”，是上海市属、国家“211工程”重点建设的综合性大学，教育部与上海市人民政府共建高校，世界一流学科建设高校，入选国家“111计划”、卓越工程师教育培养计划、卓越新闻传播人才教育培养计划、国家建设高水平大学公派研究生项目、教育部来华留学示范基地、上海市首批高水平地方高校建设试点、上海市首批深化创新创业教育改革示范高校。

Correlated neuronal activity and the flow of neural information SalinasSejnowski(2001)

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Robust changes in synchrony wereobserved from one perceptual condition to another.Even if the nature of the perceptual process isquestioned, it is remarkable that synchrony in V1 canbe so strongly modulated by changes in internal state.118.Logothetis, N. K. & Schall, J. D. Neuronal correlates ofsubjective visual perception. Science245, 761–763 (1989).119.Leopold, D. A. & Logothetis, N. K. Activity changes in earlyvisual cortex reflect monkeys’ percepts during binocularrivalry. Nature379, 549–553 (1996).120.Braitenberg, V. & Schüz, A. Cortex: Statistics and Geometryof Neuronal Connectivity (Springer, Berlin, 1997).121.White, E. L. Cortical Circuits(Birkhäuser, Boston, 1989).122.Sejnowski, T. J. in Parallel Models of Associative Memory(eds Hinton, G. E. & Anderson, J. A.) 189–212 (LawrenceErlbaum Associates, Hillsdale, New Jersey, 1981).123.Hopfield, J. J. & Brody, C. D. What is a moment? Transientsynchrony as a collective mechanism for spatiotemporalintegration. Proc. Natl Acad. Sci. USA98, 1282–1287(2001).A model for speech recognition in which a set ofsensory units responds, a downstream populationbecomes activated and synchronized, and a thirdpopulation further downstream responds selectivelyto the evoked synchrony patterns. The model showshow oscillations generated centrally could confera functional advantage to a neural circuit.124.Tuckwell, H. C. Introduction to Theoretical NeurobiologyVols 1 & 2 (Cambridge Univ. Press, New York, 1988).125.Koch, C. Biophysics of Computation(Oxford Univ. Press,New York, 1999).AcknowledgementsResearch was supported by the Howard Hughes Medical Institute.We thank P. Steinmetz for providing us with Figure 3, and P. Friesfor providing us with Figure 4. We also thank J. Reynolds andP. Tiesinga for helpful comments.550| |。

曹原石墨烯英语介绍

曹原石墨烯英语介绍Graphene: The Extraordinary Material Discovered by Cao YuanGraphene, a remarkable material discovered by Cao Yuan, has captivated the scientific community and captured the imagination of the public. This single-atom-thick layer of carbon has revolutionized various fields, from electronics and energy storage to materials science and biomedicine. In this comprehensive introduction, we will delve into the fascinating properties, applications, and the story behind the discovery of this transformative material.Cao Yuan's Groundbreaking DiscoveryCao Yuan, a Chinese physicist, and his research team at the University of Manchester made a groundbreaking discovery in 2004 when they successfully isolated and characterized graphene. This achievement was the culmination of years of research and experimentation, and it earned Cao Yuan and his colleagues the Nobel Prize in Physics in 2010.The path to the discovery of graphene was not an easy one. Researchers had long theorized about the existence of a two-dimensional material composed of carbon atoms, but its realizationhad been considered impossible due to the inherent instability of such a structure. Cao Yuan and his team, however, persevered and developed a simple yet ingenious method to extract graphene from graphite, the material found in pencils.The Remarkable Properties of GrapheneGraphene's unique atomic structure, with its tightly packed carbon atoms arranged in a hexagonal lattice, gives rise to a remarkable set of properties that have captured the attention of scientists and engineers worldwide. One of the most striking characteristics of graphene is its extraordinary strength, with a tensile strength 200 times greater than that of steel. This makes it an ideal candidate for applications that require durable and lightweight materials, such as in the aerospace and automotive industries.In addition to its remarkable strength, graphene is also an exceptional conductor of electricity and heat. Its high electrical conductivity allows for the development of faster and more efficient electronic devices, while its thermal conductivity makes it a valuable material for heat dissipation in electronic systems. These properties have led to the exploration of graphene in a wide range of applications, from transparent and flexible electronics to energy storage devices and sensors.Graphene's Potential ApplicationsThe discovery of graphene has opened up a world of possibilities, and researchers are actively exploring its potential applications in various fields. In the realm of electronics, graphene's unique properties have enabled the development of high-speed transistors, flexible displays, and advanced sensors. The material's transparency and conductivity make it an ideal candidate for use in touch screens and flexible electronics, potentially leading to the creation of foldable smartphones and wearable devices.In the field of energy, graphene's exceptional performance as an electrode material has led to the development of advanced batteries and supercapacitors. These energy storage devices have the potential to revolutionize the way we power our devices and vehicles, offering faster charging times, higher energy density, and longer lifespans.Moreover, graphene's potential in the biomedical field is equally promising. Researchers are exploring the use of graphene in drug delivery systems, tissue engineering, and biosensors. The material's biocompatibility and ability to interact with biological systems make it a promising candidate for various medical applications, from targeted cancer therapies to neural interfaces.The Ongoing Exploration of GrapheneAs the scientific community continues to delve deeper into the worldof graphene, new and exciting discoveries are being made. Researchers are constantly exploring ways to optimize the production and processing of graphene, as well as investigating its interactions with other materials to create novel composite structures.One area of particular interest is the development of graphene-based composites, which combine the exceptional properties of graphene with other materials to create even more versatile and functional materials. These composite materials have the potential to revolutionize industries ranging from construction to aerospace, offering enhanced strength, durability, and functionality.Furthermore, the exploration of graphene's potential in the realm of quantum computing and spintronics is an active area of research. The material's unique electronic properties, such as its high electron mobility and the ability to control the spin of electrons, could pave the way for the development of next-generation computing and information processing technologies.ConclusionCao Yuan's discovery of graphene has undoubtedly been a transformative moment in the history of materials science. This remarkable material has opened up a world of possibilities, with its exceptional properties and diverse applications capturing theimagination of scientists, engineers, and the general public alike.As the exploration of graphene continues, we can expect to see even more groundbreaking advancements in fields ranging from electronics and energy to biomedicine and beyond. The potential of this material to revolutionize our world is truly limitless, and the story of its discovery is a testament to the power of human ingenuity and the relentless pursuit of scientific knowledge.。

四种晶型的wo3合成方法

四种晶型的wo3合成方法
第一种合成方法是热分解法。

通过选择适当的前驱体，如钨酸铵、钨酸钠等，将其加热至高温，使其发生分解和转化反应，形成WO3晶体。

该方法简单易行，适用于大规模合成。

然而，由于高温条件的需要，该方法可能会导致晶体形貌不均匀或晶界缺陷的形成。

第二种合成方法是水热法。

通过在高温高压的水溶液中反应，可以得到具有特定晶型的WO3晶体。

在水热过程中，溶液中的钨离子逐渐聚集形成晶核，然后通过晶核的生长来形成WO3晶体。

该方法可以控制晶体的形貌和尺寸，制备出具有优良性能的WO3材料。

第三种合成方法是溶胶凝胶法。

通过在溶胶中加入适当的前驱体，如钨酸铵、钨酸钠等，并加入适当的溶剂和表面活性剂，形成均匀的溶胶体系。

然后通过调节pH值、温度等参数，使溶胶发生凝胶反应，形成凝胶。

最后，通过煅烧处理，使凝胶转化为WO3晶体。

该方法可以制备出具有高纯度和优良结晶性能的WO3材料。

第四种合成方法是气相沉积法。

通过在适当的气相条件下，将钨和氧的前驱体引入反应室中，利用化学反应生成WO3晶体。

该方法可以控制晶体的形貌和尺寸，并且可以在大面积基底上均匀生长WO3薄膜。

然而，由于气相沉积法需要高温和精确的气相条件，设备和操作要求较高。

热分解法、水热法、溶胶凝胶法和气相沉积法是四种常见的WO3晶型合成方法。

每种方法都有其特点和适用范围，选择合适的方法可以获得具有理想结构和性能的WO3材料。

随着材料科学的不断发展，相信会有更多新颖的WO3合成方法被提出，为WO3的应用领域带来更多可能性。

专业英语(字母排序版)

专业外语总结(字母顺序版)1、热处理和材料科学与工程四要素关系：材料科学与工程四要素关系：Performance 使用性能组成与结构合成与制备过程Synthesis and processingComposition and structure性质Properties2、材料科学与工程的范围(虚线)及其与基础科学及使用间的关系单词&短语表Aa significant breakthrough Important progress 重要进展。

actuators 制（致）动器、Advanced ceramics 高级陶瓷；先进陶瓷 AFM ＝原子力显微镜=Atomic Force MicroscopeAgglomerates (or aggregates) and aerogels 凝聚物和气凝胶 Alumina 氧化铝Amorphous 非晶的 Anion 阴离子anisotropic 各向异性的anode阳极axial projection轴投影BBCC＝body-centered cubic体心立方Bioceramics生物陶瓷biodegradable adj. 生物所能分解的Biodegradable systems生物可降解系统biodegradable可生物降解的bio-inspired medical prostheses仿生医学人工器官。

biological tagging生物标记biomedical applications生物医学应用。

biomimetic adj. 仿生的biomolecular single-electron devices生物分子的单电子器件Biotechnology生物技术bivalent/divalent二价的。

bulk acoustic waves BAWs体声波Bulk material 体材料CCapacitor电容器carbon Nanotube碳纳米管Catalyst催化剂Cathode 阴极Cation 阳离子Cement水泥; 接合剂ceramic based composites陶瓷基复合材料Ceramic coating 陶瓷涂层Chemical Composition化学成分Chemical reagent化学试剂civil engineering土木工程Cold isostatic pressing(CIPing) 冷等静压compacting equipment压实设备。

光伏行业英文词汇

光伏行业英文词汇Cell 电池Crystalline silicon 晶体硅Photovoltaic 光伏bulk properties 体特性at ambient temperature 在室温下wavelength 波长absorption coefficient 吸收系数electron-hole pairs 电子空穴对photon 光子density 密度defect 缺陷surface 表面electrode 电极p－type for hole extraction p型空穴型n－type for electron extraction n 型电子型majority carriers 多数载流子minority carriers 少数载流子surface recombination velocity （SRV）表面复合速率back surface field （BSF）背场at the heavily doped regions 重掺杂区saturation current density Jo 饱和电流密度thickness 厚度contact resistance 接触电阻concentration 浓度boron 硼Gettering techniques吸杂nonhomogeneous 非均匀的solubility 溶解度selective contacts 选择性接触insulator 绝缘体oxygen 氧气hydrogen 氢气Plasma enhanced chemical vapor deposition PECVDInterface 界面The limiting efficiency 极限效率reflection 反射light- trapping 光陷intrinsic material 本征材料bifacial cells 双面电池monocrystalline 单晶float zone material FZ－Si Czochralski silicon Cz－Si industrial cells 工业电池a high concentration of oxygen 高浓度氧Block or ribbon 块或硅带Crystal defects 晶体缺陷grain boundaries 晶界dislocation 位错solar cell fabrication 太阳能电池制造impurity 杂质P gettering effect 磷吸杂效果Spin－on 旋涂supersaturation 过饱和dead layer 死层electrically inactive phosphorus 非电活性磷interstitial 空隙the eutectic temperature 共融温度boron－doped substrate 掺硼基体passivated emitter and rear locally diffused cells PERL电池losses 损失the front surface 前表面metallization techniques 金属化技术metal grids 金属栅线laboratory cells 实验室电池the metal lines 金属线selective emitter 选择性发射极photolithographic 光刻gradient 斜度precipitate 沉淀物localized contacts 局部接触point contacts 点接触passivated emitter rear totally diffused PERTsolder 焊接bare silicon 裸硅片high refraction index 高折射系数reflectance 反射encapsulation 封装antireflection coating ARC减反射层an optically thin dielectric layer 光学薄电介层interference effects 干涉效应texturing 制绒alkaline solutions 碱溶液etch 刻蚀/腐蚀anisotropically 各向异性地plane 晶面pyramids 金字塔a few microns 几微米etching time and temperature 腐蚀时间和温度manufacturing process 制造工艺process flow 工艺流程high yield 高产量starting material 原材料solar grade 太阳级a pseudo－square shape 单晶型状saw damage removal 去除损伤层fracture 裂纹acid solutions 酸溶液immerse 沉浸tank 槽texturization 制绒microscopic pyramids 极小的金字塔size 尺寸大小hinder the formation of the contacts 阻碍电极的形成the concentration，the temperature and the agitation of the solution 溶液的浓度，温度和搅拌the duration of the bath 溶液维持时间alcohol 酒精improve 改进增加homogeneity 同质性wettability 润湿性phosphorus diffusion 磷扩散eliminate adsorbed metallic impurities 消除吸附的金属杂质quartz furnaces 石英炉quartz boats 石英舟quartz tube 石英炉管bubbling nitrogen through liquid POCL3 小氮belt furnaces 链式炉back contact cell 背电极电池reverse voltage 反向电压reverse current 反向电流amorphous glass of phospho－silicates 非晶玻璃diluted HF 稀释HF溶液junction isolation 结绝缘coin－stacked 堆放barrel－type reactors 桶状反应腔fluorine 氟fluorine compound 氟化物simultaneously 同时地high throughput 高产出ARC deposition 减反层沉积Titanium dioxide TiO2Refraction index 折射系数Encapsulated cell 封装电池Atmospheric pressure chemical vapor deposition APCVDSprayed from a nozzle 喷嘴喷雾Hydrolyze 水解Spin －on 旋涂Front contact print 正电极印刷The front metallization 前面金属化Low contact resistance to silicon 低接触电阻Low bulk resistivity 低体电阻率Low line width with high aspect ratio 低线宽高比Good mechanical adhesion 好机械粘贴solderability 可焊性screen printing 丝网印刷comblike pattern 梳妆图案finger 指条bus bars 主栅线viscous 粘的solvent 溶剂back contact print 背电极印刷both silver and aluminum 银铝form ohmic contact 形成欧姆接触warp 弯曲cofiring of metal contacts 电极共烧organic components of the paste 浆料有机成分burn off 烧掉sinter 烧结perforate 穿透testing and sorting 测试分选I-V curve I-V曲线Module 组件Inhomogeneous 不均匀的Gallium 镓Degradation 衰减A small segregation coefficient 小分凝系数Asymmetric 不对称的High resolution 高分辨率Base resistivity 基体电阻率The process flow 工艺流程Antireflection coating 减反射层Cross section of a solar cell 太阳能电池横截面Dissipation 损耗Light－generated current 光生电流Incident photons 入射光子The ideal short circuit flow 理想短路电路The depletion region 耗尽区Quantum efficiency 量子效率Blue response 蓝光效应Spectral response 光谱响应Light－generated carriers 光生载流子Forward bias 正向偏压Simulation 模拟Equilibrium 平衡Superposition 重合The fourth quadrant 第四象限The saturation current 饱和电流Io Fill factor 填充因子FF Graphically 用图象表示The maximum theoretical FF 理论上Empirically 经验主义的Normalized Voc 规范化VocThe ideality factor n－factor 理想因子Terrestrial solar cells 地球上的电池At a temperature of 25C 25度下Under AM1.5 conditions 在AM1.5环境下Efficiency is defined as ××定义为Fraction 分数Parasitic resistances 寄生电阻Series resistance 串联电阻Shunt resistance 并联电阻The circuit diagram 电路图Be sensitive to temperature 易受温度影响The band gap of a semiconductor 半导体能隙The intrinsic carrier concentration 本征载流子的浓度Reduce the optical losses 减少光损Deuterated silicon nitride 含重氢氮化硅Buried contact solar cells BCSC Porous silicon PS 多孔硅Electrochemical etching 电化学腐蚀Screen printed SP 丝网印刷A sheet resistance of 45-50 ohm/sq 45到50方块电阻The reverse saturation current density Job 反向饱和电流密度Destructive interference 相消干涉Surface textingInverted pyramid 倒金字塔Four point probe 四探针Saw damage etchAlkaline 碱的Cut groove 开槽Conduction band 导带Valence band 价带B and O simultaneously in silicon 硼氧共存Iodine/methanol solution 碘酒/甲醇溶液Rheology 流变学Spin－on dopants 旋涂掺杂Spray－on dopants 喷涂掺杂The metallic impurities 金属杂质One slot for two wafers 一个槽两片Throughput 产量A standard POCL3 diffusion 标准POCL3扩散Back－to－back diffusion 背靠背扩散Heterojunction with intrinsic thin －layer HIT电池Refine 提炼Dye sensitized solar cell 染料敏化太阳电池Organic thin film solar cell 有机薄膜电池Infra red 红外光Unltra violet 紫外光Parasitic resistance 寄生电阻Theoretical efficiency 理论效率Busbar 主栅线Kerf loss 锯齿损失Electric charge 电荷Covalent bonds 共价键The coefficient of thermal expansion (CTE) 热膨胀系数Bump 鼓泡Alignment 基准Fiducial mark 基准符号Squeegee 橡胶带Isotropic plasma texturing 各向等离子制绒Block-cast multicrystalline silicon 整铸多晶硅Parasitic junction removal 寄生结的去除Iodine ethanol 碘酒Deionised water 去离子水Viscosity 粘性Mesh screen 网孔Emulsion 乳胶Properties of light 光特性Electromagnetic radiation 电磁辐射The visible light 可见光The wavelength，denoted by R 用R 表示波长An inverse relationship between……and……given by the equation：相反关系，可用方程表示Spectral irradiance 分光照度……is shown in the figure below. Directly convert electricity into sunlight 直接将电转换成光Raise an electron to a higher energy state 电子升入更高能级External circuit 外电路Meta-stable 亚稳态Light-generated current 光生电流Sweep apart by the electric field Quantum efficiency 量子效率The fourth quadrant 第四象限The spectrum of the incident light 入射光谱The AM1.5 spectrumThe FF is defined as the ratio of ……to……Graphically 如图所示Screen-printed solar cells 丝网印刷电池Phosphorous diffusion 磷扩散A simple homongeneous diffusion 均匀扩散Blue response 蓝光相应Shallow emitter 浅结Commercial production 商业生产Surface texturing to reduce reflection 表面制绒Etch pyramids on the wafer surface with a chemical solutionCrystal orientationTitanium dioxide TiO2PasteInorganic 无机的Glass 玻璃料DopantCompositionParticle sizeDistributionEtch SiNxContact pathSintering aidAdhesion 黏合性Ag powderMorphology 形态CrystallinityGlass effect on Ag/Si interface Reference cellOrganicResin 树脂Carrier 载体Rheology 流变性Printability 印刷性Aspect ratio 高宽比Functional groupMolecular weightAdditives 添加剂Surfactant 表面活性剂Thixotropic agent 触变剂Plasticizer 可塑剂Solvent 溶剂Boiling pointVapor pressure蒸汽压Solubility 溶解性Surface tension 表面张力Solderability Viscosity 黏性Solids contentFineness of grind ，研磨细度Dried thicknessFired thicknessDrying profilePeak firing temp300 mesh screenEmulsion thickness 乳胶厚度StorageShelf life 保存期限Thinning 稀释Eliminate Al bead formation 消除铝珠Low bowingWet depositPattern design: 100um*74太阳电池solar cell单晶硅太阳电池single crystalline silicon solar cell多晶硅太阳电池so multi crystalline silicon solar cell非晶硅太阳电池amorphous silicon solar cell薄膜太能能电池Thin-film solar cell多结太阳电池multijunction solar cell 化合物半导体太阳电池compound semiconductor solar cell用化合物半导体材料制成的太阳电池带硅太阳电池silicon ribbon solar cell光电子photo-electron短路电流short-circuit current （Isc）开路电压open-circuit voltage （V oc）最大功率maximum power (Pm)最大功率点maximum power point最佳工作点电压optimum operating voltage (Vn)最佳工作点电流optimum operating current (In)填充因子fill factor(curve factor)曲线修正系数curve correction coefficient太阳电池温度solar cell temperature串联电阻series resistance并联电阻shunt resistance转换效率cell efficiency暗电流dark current暗特性曲线dark characteristic curve光谱响应spectral response(spectral sensitivity)太阳电池组件module(solar cell module)隔离二极管blocking diode旁路二极管bypass (shunt) diode组件的电池额定工作温度NOCT（nominal operating cell temperature）短路电流的温度系数temperature coefficients of Isc开路电压的温度系数temperature coefficients of V oc峰值功率的温度系数temperature coefficients of Pm组件效率Module efficiency峰瓦watts peak额定功率rated power额定电压rated voltage额定电流rated current太阳能光伏系统solar photovoltaic (PV) system并网太阳能光伏发电系统Grid-Connected PV system独立太阳能光伏发电系统Stand alone PV system太阳能控制器solar controller逆变器inverter孤岛效应islanding逆变器变换效率inverter efficiency方阵(太阳电池方阵) array （solar cell array）子方阵sub-array (solar cell sub-array)充电控制器charge controller直流/直流电压变换器DC/DC converter(inverter)直流/交流电压变换器DC/AC converter(inverter)电网grid太阳跟踪控制器sun-tracking ontroller 并网接口utility interface光伏系统有功功率active power of PV power station光伏系统无功功率reactive power of PV power station光伏系统功率因数power factor of PV power station公共连接点point of common coupling 接线盒junction box发电量power generation输出功率output power交流电Alternating current断路器Circuit breaker汇流箱Combiner box配电箱Distribution box电能表Supply meter变压器Transformer太阳能光伏建筑一体化Building-integrated PV (BIPV)辐射radiation太阳辐照度Solar radiation散射辐照（散射太阳辐照）量diffuse irradiation(diffuse insolation)直射辐照direct irradiation (direct insolation)总辐射度(太阳辐照度) global irradiance (solar global irradiance)辐射计radiometer方位角Azimuth angle倾斜角Tilt angle太阳常数solar constant大气质量(AM) air mass太阳高度角solar elevation angle标准太阳电池standard solar cell （reference solar cell）太阳模拟器solar simulator太阳电池的标准测试条件为：环境温度25±2℃，用标准测量的光源辐照度为1000W/m2 并且有标准的太阳光谱辐照度分布。

锑化物半导体开拓先锋——记中国科学院半导体研究所研究员牛智川

锑化物半导体开拓先锋——记中国科学院半导体研究所研究员牛智川　李莉王辉　半导体，与计算机、原子能、激光科技并称为当代科技文明标志性四大领域。

半导体科技经过约70年的发展，科学理论不断完善，材料器件应用日益广泛，已经成为世界各大国强盛的战略根基。

我国科技界将半导体材料体系的拓展称为三代半导体，也就是硅或锗基、砷化镓或磷化铟基、氮化镓或碳化硅基材料三大体系。

基于这三代（类）半导体形成的大规模集成电路与计算机技术、高速光纤通信与互联网技术、高功率电力电子与能源技术等诸多重大战略应用价值方向，不断推动现代信息技术、能源技术以及人工智能技术的进步和发展。

囿于时代背景和工业基础，我国的第一代、第二代半导体科技水平长期落后于人。

进入21世纪后，半导体科技发展规划全面步入国家战略层面。

2020年9月4日，一则“我国将把大力发展第三代半导体产业写入‘十四五’规划”的消息，更是引发市场对功率半导体的瞩目，以氮化镓、碳化硅为首的第三代半导体材料一时间风光无限。

当前，伴随量子信息、可再生能源、人工智能等高新技术的迅速涌现和发展，持续催生和驱动半导体新体系微电子、光电子、磁电子、热电子等多功能器件技术的涌现。

特别是信息技术向智能化、量子化迈进的重要时期，基于经典的前三代半导体深入挖掘其潜力的同时，也需要开拓新体系、新结构、新功能半导体材料，以满足不断增长的高性能、低成本芯片的需求。

在牛智川看来，以G a2O3超宽带隙半导体、锑化物窄带隙半导体、二维原子晶体低维半导体等为核心体系的多种新材料技术中，新型锑化物半导体材料在开拓量子拓扑新效应、推动红外器件制备技术变革两方面占有战略先机地位，是近20年来，国内外半导体材料研究领域呈现出绝无仅有的兼具基础研究科学意义和确定性重大应用前景的新材料体系，作为在相关研究方向走在全球前列的团体之一，中国科学院半导体研究所牛智川研究员团队领衔了我国锑化物半导体的开拓与发展。

走近锑化物半导体什么是锑化物半导体？在回答这个问题之前，先来认识一下半导体。

(完整版)光伏行业英文词汇.docx

光伏行业英文词汇Cell 电池Crystalline silicon晶体硅Photovoltaic光伏bulk properties体特性at ambient temperature在室温下wavelength波长absorption coefficient吸收系数electron-hole pairs电子空穴对photon光子density密度defect缺陷surface表面electrode电极p－type for hole extraction p型空穴型n－type for electron extraction n型电子型majority carriers多数载流子minority carriers少数载流子surface recombination velocity （ SRV）表面复合速率back surface field（BSF）背场at the heavily doped regions重掺杂区saturation current density Jo饱和电流密度thickness厚度contact resistance 接触电阻concentration 浓度 boron 硼Gettering techniques 吸杂nonhomogeneous 非均匀的solubility溶解度selective contacts 选择性接触insulator 绝缘体oxygen 氧气hydrogen 氢气Plasma enhanced chemical vapor deposition PECVDInterface界面The limiting efficiency极限效率reflection反射light- trapping光陷intrinsic material本征材料bifacial cells双面电池monocrystalline单晶float zone material FZ－ Si Czochralski silicon Cz－ Si industrial cells工业电池a high concentration of oxygen 高浓度氧Block or ribbon块或硅带Crystal defects晶体缺陷grain boundaries晶界dislocation位错solar cell fabrication太阳能电池制造impurity杂质P gettering effect 磷吸杂效果 Spin－on 旋涂supersaturation过饱和dead layer死层electrically inactive phosphorus 非电活性磷interstitial空隙the eutectic temperature共融温度boron － doped substrate掺硼基体passivated emitter and rear locally diffused cells PERL电池losses 损失the front surface前表面metallization techniques金属化技术metal grids金属栅线laboratory cells实验室电池the metal lines金属线selective emitter选择性发射极photolithographic光刻gradient 斜度precipitate沉淀物localized contacts局部接触point contacts点接触passivated emitter rear totally diffused PERTsolder 焊接bare silicon裸硅片high refraction index高折射系数reflectance反射encapsulation封装antireflection coating ARC减反射层an optically thin dielectric layer 光学薄电介层interference effects干涉效应texturing制绒alkaline solutions碱溶液etch 刻蚀 / 腐蚀anisotropically各向异性地plane 晶面pyramids金字塔a few microns几微米etching time and temperature腐蚀时间和温度manufacturing process制造工艺process flow工艺流程high yield高产量starting material原材料solar grade太阳级a pseudo －square shape单晶型状saw damage removal去除损伤层fracture裂纹acid solutions酸溶液immerse 沉浸tank 槽texturization制绒microscopic pyramids 极小的金字塔size 尺寸大小hinder the formation of the contacts 阻碍电极的形成the concentration ，the temperature and the agitation of the solution 溶液的浓度，温度和搅拌the duration of the bath溶液维持时间alcohol酒精improve改进增加homogeneity 同质性wettability润湿性phosphorus diffusion磷扩散eliminate adsorbed metallic impurities消除吸附的金属杂质quartz furnaces石英炉quartz boats石英舟quartz tube石英炉管bubbling nitrogen through liquidPOCL3小氮belt furnaces链式炉back contact cell背电极电池reverse voltage反向电压reverse current反向电流amorphous glass of phospho －silicates非晶玻璃diluted HF稀释 HF溶液junction isolation结绝缘coin －stacked 堆放barrel －type reactors桶状反应腔fluorine氟fluorine compound 氟化物simultaneously同时地high throughput高产出ARC deposition减反层沉积Titanium dioxide TiO2Refraction index折射系数Encapsulated cell封装电池Atmospheric pressure chemical vapor deposition APCVDSprayed from a nozzle喷嘴喷雾Hydrolyze水解Spin － on 旋涂Front contact print正电极印刷The front metallization前面金属化Low contact resistance tosilicon 低接触电阻Low bulk resistivity低体电阻率Low line width with high aspect ratio低线宽高比Good mechanical adhesion好机械粘贴solderability可焊性screen printing丝网印刷comblike pattern梳妆图案finger指条bus bars主栅线viscous粘的solvent溶剂back contact print背电极印刷both silver and aluminum银铝form ohmic contact 形成欧姆接触warp 弯曲cofiring of metal contacts电极共烧organic components of the paste 浆料有机成分burn off烧掉sinter烧结perforate穿透testing and sorting 测试分选 I-V curve I-V 曲线Module 组件Inhomogeneous 不均匀的Gallium镓Degradation衰减A small segregation coefficient 小分凝系数Superposition重合The fourth quadrant第四象限The saturation current饱和电流 Io Fill factor填充因子 FF Graphically用图象表示The maximum theoretical FF理论上Empirically经验主义的Normalized Voc规范化 VocThe ideality factor n－ factor理想因子Terrestrial solar cells地球上的电池At a temperature of 25C 25度下Under AM1.5 conditions在 AM1.5环境下Efficiency is defined as××定义为Fraction 分数Parasitic resistances寄生电阻Series resistance串联电阻Shunt resistance并联电阻The circuit diagram电路图Be sensitive to temperature易受Asymmetric 不对称的温度影响High resolution高分辨率The band gap of a semiconductor 半Base resistivity基体电阻率导体能隙The process flow工艺流程The intrinsic carrier Antireflection coating减反射层concentration 本征载流子的浓度Cross section of a solar cell太Reduce the optical losses减少光阳能电池横截面Dissipation损耗Light －generated current光生电流Incident photons入射光子The ideal short circuit flow理想短路电路The depletion region耗尽区Quantum efficiency量子效率Blue response 蓝光效应Spectral response光谱响应Light － generated carriers光生载流子Forward bias正向偏压Simulation模拟Equilibrium平衡损Deuterated silicon nitride含重氢氮化硅Buried contact solar cells BCSC Porous silicon PS多孔硅Electrochemical etching电化学腐蚀Screen printed SP丝网印刷A sheet resistance of 45-50 ohm/sq45 到 50 方块电阻The reverse saturation current density Job反向饱和电流密度Destructive interference相消干涉Surface textingInverted pyramid倒金字塔Four point probe四探Block-cast multicrystalline Saw damage etch silicon整多晶硅Alkaline 碱的Parasitic junction removal寄生Cut groove开槽的去除Conduction band Iodine ethanol碘酒Valence band 价Deionised water去离子水B and O simultaneously in silicon Viscosity粘性硼氧共存Mesh screen 网孔Iodine/methanol solution碘酒 / 甲Emulsion乳胶醇溶液Rheology 流学Properties of light光特性Spin －on dopants旋涂Electromagnetic radiation磁Spray －on dopants涂射The metallic impurities金属The visible light可光One slot for two wafers一个槽两The wavelength ，denoted by R 用 R 片表示波Throughput量An inverse relationship A standard POCL3 diffusion准between ⋯⋯ and ⋯⋯ given by thePOCL3散Back－to －back diffusion背靠背散Heterojunction with intrinsic thin －layer HIT 池Refine 提Dye sensitized solar cell染料敏化太阳池Organic thin film solar cell有机薄膜池Infra red外光Unltra violet紫外光Parasitic resistance寄生阻Theoretical efficiency理效率Busbar 主Kerf loss失Electric charge荷Covalent bonds 共价The coefficient of thermal expansion (CTE)膨系数Bump 鼓泡Alignment基准Fiducial mark基准符号Squeegee 橡胶Isotropic plasma texturing 各向等离子制equation ：相反关系，可用方程表示Spectral irradiance分光照度⋯⋯is shown in the figure below. Directly convert electricity into sunlight 直接将成光Raise an electron to a higher energy state 子升入更高能External circuit外路Meta-stableLight-generated current光生流Sweep apart by the electric field Quantum efficiency量子效率The fourth quadrant第四象限The spectrum of the incident light 入射光The AM1.5 spectrumThe FF is defined as the ratio of ⋯⋯ to ⋯⋯Graphically 如所示Screen-printed solar cells网印刷池Phosphorous diffusion磷散A simple homongeneousdiffusion 均匀散Blue response光相Shallow emitter 浅结 Commercial production 商业生产Surface texturing to reduce reflection表面制绒Etch pyramids on the wafer surface with a chemical solutionCrystal orientationTitanium dioxide TiO2PasteInorganic无机的Glass 玻璃料DopantCompositionParticle sizeDistributionEtch SiNxContact pathSintering aidAdhesion 黏合性Ag powderMorphology 形态CrystallinityGlass effect on Ag/Siinterface Reference cellOrganicResin树脂Carrier载体Rheology 流变性Printability印刷性Aspect ratio高宽比Functional groupMolecular weightAdditives添加剂Surfactant表面活性剂Thixotropic agent触变剂Plasticizer可塑剂Solvent 溶剂Boiling pointVapor pressure蒸汽压Solubility溶解性Surface tension表面张力Solderability Viscosity黏性Solids contentFineness of grind，研磨细度Dried thicknessFired thicknessDrying profilePeak firing temp300 mesh screenEmulsion thickness乳胶厚度StorageShelf life保存期限Thinning稀释Eliminate Al bead formation消除铝珠Low bowingWet depositPattern design: 100um*74太阳电池solar cell单晶硅太阳电池single crystalline silicon solar cell多晶硅太阳电池so multi crystalline silicon solar cell非晶硅太阳电池amorphous silicon solar cell薄膜太能能电池Thin-film solar cell多结太阳电池multijunction solar cell化合物半导体太阳电池 compound semiconductor solar cell用化合物半导体材料制成的太阳电池带硅太阳电池 silicon ribbon solar cell光电子 photo-electron短路电流 short-circuit current （Isc）开路电压 open-circuit voltage （Voc）最大功率 maximum power (Pm)最大功率点maximum power point最佳工作点电压 optimum operating voltage (Vn)最佳工作点电流 optimum operating current (In)填充因子 fill factor(curve factor)曲线修正系数 curve correction coefficient太阳电池温度solar cell temperature串联电阻series resistance并联电阻 shunt resistance转换效率 cell efficiency暗电流 dark current暗特性曲线dark characteristic curve光谱响应 spectral response(spectral sensitivity)太阳电池组件 module(solar cell module)隔离二极管blocking diode旁路二极管bypass (shunt) diode组件的电池额定工作温度NOCT （ nominal operating cell temperature）短路电流的温度系数temperature coefficients of Isc开路电压的温度系数temperature coefficients of Voc峰值功率的温度系数temperature coefficients of Pm组件效率Module efficiency峰瓦 watts peak额定功率rated power额定电压rated voltage额定电流rated current太阳能光伏系统solar photovoltaic (PV) system并网太阳能光伏发电系统Grid-Connected PV system独立太阳能光伏发电系统Stand alone PV system太阳能控制器 solar controller逆变器 inverter孤岛效应islanding逆变器变换效率inverter efficiency方阵 (太阳电池方阵 ) array （ solar cell array）子方阵 sub-array (solar cell sub-array)充电控制器charge controller直流 / 直流电压变换器 DC/DC converter(inverter)直流 / 交流电压变换器 DC/AC converter(inverter)电网 grid irradiance (solar global irradiance)太阳跟踪控制器 sun-tracking ontroller辐射计 radiometer并网接口 utility interface方位角 Azimuth angle光伏系统有功功率 active power of PV倾斜角 Tilt anglepower station太阳常数 solar constant光伏系统无功功率reactive power of大气质量 (AM) air massPV power station光伏系统功率因数 power factor of PV太阳高度角 solar elevation angle power station标准太阳电池 standard solar cell 公共连接点 point of common coupling（reference solar cell）接线盒 junction box太阳模拟器 solar simulator发电量 power generation太阳电池的标准测试条件为：环境温输出功率 output power 度 25±2℃，用标准测量的光源辐照度为交流电 Alternating current1000W/m2 并且有标准的太阳光谱辐断路器 Circuit breaker照度分布。

详细-介绍石墨烯英文版解析

Graphene is a one-atom-thick planar sheet of sp2-bonded carbon atoms that are densely packed in a honeycomb crystal lattice The name ‘graphene’ comes from graphite + -ene = graphene
Third, industrial use of graphene as a transparent conductor could have huge implications for the solar industry. As synthetic routes improve, the prospect of replacing ITO with a low-cost carbon-based coating seems feasible. This would not only remove significant uncertainty about the availability and cost of indium but also enable non evaporative roll-to roll processing of transparent conductors.
In 2004: Andre Geim and Kostya Novoselov at Manchester University managed to extract single-atom-thick crystallites (graphene) from bulk graphite: Pulled out graphene layers from graphite and transferred them onto thin silicon dioxide on a silicon wafer in a process sometimes called micromechanical cleavage or, simply, the Scotch tape technique. Since 2004, an explosion in the investigation of graphene in term of synthesis, characterization, properties as well as specifical potential application were reported.

Silicon-silicon-germanium heterojunction bipolar t

专利名称：Silicon-silicon-germanium heterojunction bipolar transistor fabrication method发明人：Deok-Ho Cho,Soo-Min Lee,Tae-Hyeon Han,Byung-Ryul Ryum,Kwang-Eui Pyun申请号：US08/700930申请日：19960823公开号：US05668022A公开日：19970916专利内容由知识产权出版社提供摘要：A silicon/silicon-germanium bipolar transistor fabrication method employs a metallic silicide film as an extrinsic base electrode to reduce resistance of the extrinsic base electrode, and to increase a maximum oscillation frequency and cut-off frequency due to its self- aligned structure. The fabrication method enables agglomeration to occur on the side wall of the polycrystalline silicon film connected to the metallic silicide film instead of on the interface between the metallic silicide film and the lower silicon/silicon-germanium film, and leads the extrinsic base electrode to be sandwitched by the insulator films, thereby realizing a constant resistance and also resulting in the application of integrated circuits to a mass production mechanism.申请人：ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE,KOREA TELECOMMUNICATION AUTHORITY代理机构：Nixon & Vanderhye P更多信息请下载全文后查看。

光电转化效率英文

光电转化效率英文Photovoltaic Efficiency: Harnessing the Power of LightThe quest for renewable and sustainable energy sources has been a driving force in the scientific community for decades. Among the various technologies that have emerged, photovoltaic (PV) systems have garnered significant attention due to their ability to directly convert sunlight into electrical energy. The efficiency of this conversion process, known as photovoltaic efficiency, is a crucial factor in determining the overall performance and viitability of solar energy as a viable alternative to traditional fossil fuels.At its core, the photovoltaic effect is a phenomenon in which the absorption of light by a semiconductor material generates electron-hole pairs that can be separated and collected to produce an electric current. The efficiency of this process is determined by a complex interplay of various factors, including the properties of the semiconductor material, the design of the PV cell, and the conditions under which the system operates.One of the primary factors influencing photovoltaic efficiency is the ability of the semiconductor material to absorb a wide range of thesolar spectrum. Ideally, the semiconductor should be able to absorb as much of the incident solar radiation as possible, converting it into usable electrical energy. This is where the concept of bandgap energy comes into play. The bandgap is the energy difference between the valence band and the conduction band of the semiconductor material, and it determines the range of wavelengths that the material can effectively absorb.Researchers have dedicated significant efforts to developing semiconductor materials with optimized bandgap energies to maximize the absorption of solar radiation. Silicon, the most widely used semiconductor in PV systems, has a bandgap energy of around 1.1 eV, which allows it to absorb a significant portion of the visible and near-infrared regions of the solar spectrum. However, there are other semiconductor materials, such as gallium arsenide (GaAs) and cadmium telluride (CdTe), that have bandgap energies more closely matched to the solar spectrum, potentially offering higher photovoltaic efficiencies.Another crucial factor in photovoltaic efficiency is the ability of the PV cell to effectively separate and collect the generated electron-hole pairs. This process is influenced by the design and structure of the PV cell, including the choice of electrode materials, the quality of the semiconductor-electrode interface, and the presence of any recombination centers or defects within the cell. Researchers haveexplored various device architectures, such as heterojunction and tandem designs, to optimize the charge separation and collection processes, ultimately improving the overall photovoltaic efficiency.The performance of a PV system is also heavily dependent on the operating conditions, such as temperature and irradiance levels. Increased temperatures can lead to a decrease in the bandgap energy of the semiconductor material, which can result in a lower open-circuit voltage and a reduction in photovoltaic efficiency. Conversely, higher irradiance levels can enhance the generation of electron-hole pairs, potentially increasing the current output and overall efficiency.To address these challenges, researchers have developed various strategies to improve photovoltaic efficiency. One approach is the use of advanced materials, such as perovskites and organic semiconductors, which have shown promising results in terms of efficiency and cost-effectiveness. Perovskite solar cells, for example, have demonstrated rapid advancements in efficiency, reaching over 25% in laboratory settings, making them a compelling alternative to traditional silicon-based PV technologies.Another approach is the development of tandem or multi-junction solar cells, which combine multiple semiconductor materials with different bandgap energies. By stacking these materials in a strategicmanner, the system can effectively capture a broader range of the solar spectrum, leading to higher overall photovoltaic efficiencies. These tandem designs have the potential to surpass the theoretical efficiency limits of single-junction solar cells, paving the way for even more efficient PV systems.In addition to material and device innovations, researchers have also explored techniques to optimize the system-level performance of PV installations. This includes the development of advanced tracking systems, which can adjust the orientation of the solar panels to follow the sun's path, maximizing the amount of incident solar radiation. Furthermore, the integration of energy storage solutions, such as batteries or thermal storage, can help overcome the intermittency of solar energy, enabling a more reliable and consistent power supply.The quest for higher photovoltaic efficiency is not just a scientific pursuit but also a critical step towards the widespread adoption of solar energy as a viable alternative to traditional fossil fuels. As the world grapples with the pressing challenges of climate change and the need for sustainable energy solutions, the continued advancement of photovoltaic technology holds the promise of a future powered by the abundant and renewable energy of the sun.。

肖特基结

Tunable Graphene−Silicon Heterojunctions for Ultrasensitive PhotodetectionXiaohong An,*,†Fangze Liu,†Yung Joon Jung,‡and Swastik Kar*,††Department of Physics and‡Mechanical and Industrial Engineering,Northeastern University,Boston,Massachusetts02115,United States*Supporting Informationand scalable broadband(400<λ<900nm)photodetectors,spectroscopic and imaging devices,and further,and are architecturallyequivalent power,speciﬁc detectivityanoscale materials,due to their diverse electronic and optical properties,and with a range of architectures,are constantly being explored for an array of low-cost,sensitive,and scalable photodetection technologies.1−4For example,nano-wires of conventional semiconductor materials such as Si,Ge, GaN,GaAs,InP,and so forth provide a versatile platform for photodetection,aﬀording direct structural and functional compatibility with existing photonic and optoelectronic circuitry.1In contrast,low-cost solution-processable quantum dots are highly appealing due to their potentials for large-area andﬂexible-electronic applications.Their photoconductive response characterizes high quantum gains resulting in ultrahigh responses(∼103A/W)and speciﬁc detectivities (∼1013Jones).2Nanoscale junctions of quantum dots with metals have also been reported to have ultrafast responses of the order of GHz.3Similarly,carbon nanotubes,4with their extremely narrow diameters and chirality-dependent band-gaps, can be potentially utilized for spectrally selective photo-detectors of ultrasmall dimensions.In this context,graphene-based photon-sensing and photo-switching devices have recently attracted enormous attention for their ultrafast and broadband response.5−15Although these devices are highly appealing for ultrafast optical communica-tions,they suﬀer limitations for weak signal detection,imaging, and spectroscopic applications due to their low responsivity values.Within the visible to telecommunications-friendly wavelength range(i.e.,400nm≤λ≤1550nm),using both photovoltaic5,10and photothermoelectric or hot-carrier ef-fects9,11,14along with enhancement techniques including asymmetric metal-contacts,6plasmonic architectures,7,8and microcavity conﬁnements,12,13the photocurrent responsivity (R I=I ph/P)has at best remained limited within1−2×10−2A/ W.7,13These low responses have been primarily attributed to the intrinsically low optical absorption(≈2.3%)of graphene16 along with the absence of any gain mechanisms.By using graphene as the carrier collector and multiplier,an eﬀective gain mechanism(with R I>107A/W)was recently reported in graphene/quantum-dot hybrid devices.15Despite their appeal for ultraweak signal detection,the responsivity of these devices above P≈10−13W fall as R I∼1/P,implying a rapid photocurrent saturation above these incident light powers.With considerably large dark currents that render them ineﬀective as photoswitches(ON/OFF ratio≪1)and large dark-power consumption,they are impractical for many large-scale applications(such as pixels in imaging devices that require large arrays of photodetectors).For many applications,photovoltage(instead of photo-current)measurements are preferred as a sensitive method for photodetection without any Joule-heating associated power consumption.Past works reveal that metal−graphene interfacesReceived:October3,2012Revised:January22,2013Published:January25,2013can generate photovoltages of ∼1V/W,5which can be enhanced to ∼5V/W using plasmonic focusing and appropriate gate voltages.7It appears that the limits of photovoltage response for low dark-current graphene-based devices,especially under extremely weak signals (where the high responsivities are more meaningful),have not been critically investigated.Further,most of the above-mentioned devices used mechanically exfoliated graphene,17which possess high carrier mobility,but are unsuitable for large-scale deployment.For realistic applications,high-performance devices using large-area chemical vapor deposition (CVD)-grown graphene 18without complex enhancement architec-tures 6−8,12,13are highly desirable.However,so far,a simple approach for obtaining tunable high-responsivity graphene-based devices with low dark currents,low-power detection limits,and high operational dynamic ranges,using simple,scalable,and potentially low-cost techniques remains undem-onstrated.We show that planar 2D heterojunctions of CVD-grown graphene and Si in a conventional Schottky-diode-like con ﬁguration can e ﬀectively address these issues,providing a platform for a variety of optoelectronic devices.In these junctions,the photoexcitation resides in Si,while graphene is the carrier collector.In recent times,a number of works have explored the unique properties of graphene/Si heterojunctions to develop diodes,19solar cells,20,21and the so-called “barristor ”22 a variable-barrier switch.However,so far,these junctions have not been examined for ultrasensitive photo-detection for applications such as weak-signal imaging or spectroscopy.Further,in these junctions,low reverse-biases can very e ﬀectively manipulate the Fermi-levels of graphene (unlike larger voltages that are required in capacitively coupled gates).The ability to tune the dark Fermi level (Ef (Gr))of graphene and,more importantly,its relative position with respect to the quasi-Fermi level for holes in silicon (E ′f,h (Si),the modi ﬁed Fermi level due to the generation of photoexcited holes in Si)is a key mechanism that enables a high degree of tunability and e ﬃcient capture of photoexcited carriers,resulting in high photocurrent responsivity values whose performances can be dramatically improved by layer-thickening and simple doping approaches.The tunable photocurrent responsivity is an attractive feature for adjustment to variable-brightness imaging applications.At the same time,these junctions also possess exceptionally high photovoltage response,which increases with decreasing incident power,making it highly suitable as weak-signal detectors in the photovoltage mode.In this work,weFigure 1.(a)Schematic and (b)a digital photograph of a monolayer graphene (1LG)/Si heterojunction device,with the polarity in part (a)shown for forward bias.(c)Thermal equilibrium energy band diagram of the heterojunction in darkness,with the band pro ﬁle of n-Si pinned to the charge neutrality levelofitsown surface states (see text).The dark Fermi level of graphene E f (Gr)is also shown.(d)Current −voltage (I −V )curves ofdevice A (area =25mm 2)under darkness and weak illumination (P =1.23μW,λ=488nm)showing a conventional photodiode-like behavior.(e)Deviation of the I −V curves from a conventional photodiode response as the incident light power is increased up to P =6.5mW.The expected ideal photodiode behavior at P =6.5mW is plotted with a red dashed line.(f)Schematic showing the application of a forward bias (V fbias )that lowers E f (Gr)and reduces the number of accessible states for the injection of photoexcited holes from Si,resulting in the strongly suppressed photocurrent in forward bias seen in part e.The red surface on the Dirac cone of graphene denotes the holes injected from Si and is a measure of the maximum photocurrent when the quasi Fermi level of graphene,E ′f (Gr),aligns with the quasi Fermi level for holes in Si,E ′f,h (Si).(g)Application of a reversebias (V r bias )raises E f (Gr)and opens up a large number of accessible states that can be occupied by photoexcited holes injected from Si under illumination.This results in the unsuppressed large photocurrents under reverse bias as seen in part e.The external bias controls the position of the Fermi level and hence the number of photoexcited carriers that can inject from Si (i.e.,the photocurrent).critically investigate the various important parameters of such applications,such as responsivity,detection limit,switching speed,ON/OFF ratio,spectral bandwidth,contrast sensitivity,and dynamic range in monolayer and few-layered graphene/Si heterojunctions,operating both in photocurrent and photo-voltage modes.The photoresponse behaviors were ﬁrst tested in monolayer graphene (1LG)/Si devices,and their intrinsic parameters were found to be largely independent of size.We present results from the largest (device A)and the smallest (device B)devices with junction areas =25mm 2and 5000μm 2,respectively.We used lightly n-doped Si (ρ=1−10Ωcm),and the details of device fabrication and characterization can be found in the Supporting Information.Figure 1a shows a schematic of a typical monolayer graphene 1LG/Si device,and part b shows a digital photograph of device A.The energy band diagram,showing the Fermi levels of graphene (E f (Gr))and lightly n-doped Si (E f (Si))at thermal equilibrium (in a dark condition)is shown schematically in Figure 1c.From detailed measure-ments of the Schottky barrier heights (as discussed later on),we found that in our devices,E f (Si)was pinned to the charge-neutrality level of its own surface states,with a Schottky barrier height ϕbn ∼0.8V.Figure 1d shows the dark and low-power (P =1.23μW,λ=488nm)current −voltage (I −V )curves in device A,which follow a conventional rectifying and photo-diode-like behavior,respectively.Incident photons generate e −h pairs in Si,and these photoexcited carriers thermalize rapidly to form quasi Fermi levels (separately for holes and electrons near the valence and conduction band edges (VBE and CBE)of Si,respectively).The built-in electric ﬁeld at the graphene/Si junction causes holes to inject out from Si (from the small energy-band between the VBE and quasi Fermi level for holes in Si)into graphene,which causes the appearance of a quasi Fermi level in graphene,E ′f (Gr).The position of the quasi Fermi level in graphene depends on (a)the position its bias-dependent E f (Gr)and (b)the number of injected holes from Si.At low incident powers,E ′f (Gr)lies between E f (Gr)and E ′f,h (Si),and the photoexcited holes can all ﬁnd accessible states in graphene to inject into,resulting in the conventional photodiode-like response.Figure 1e shows the I −V curves under increasing incident light powers (up to P =6.5mW).At higher incident powers,there is a signi ﬁcant deviation of the I −V curves from the conventional photodiode-like response,with a strong suppression of photocurrents close to V =0,and a sharp rise and rapid saturation of photocurrents at low reverse biases.This highly tunable photocurrent response is a result of the unique electronic structure of graphene near its Fermi level.Figure 1f schematically represents the situation under a low forward bias,V f bias ,which lowers the Fermi level from its “unbiased ”position.As seen in this ﬁgure,the lowering of the Fermi level brings it closer to the quasi Fermi level for holes in Si,greatly diminishing the number of accessible states for the photoexcited carriers to inject into from Si.Hence,under a forward bias,with increasing incident power and rate of hole-injection,E ′f (Gr)lowers and quickly aligns with the quasi Fermi level for holes in Si,E ′f,h (Si)(E ′f (Gr)=E ′f,h (Si),FigureFigure 2.(a)Variation of the voltage responsivity obtained from the open-circuit voltage,V OC ,and as a function of incident power,P ,in device B.At the lowest powers,the voltage responsivity exceeds 107V/W.(b)Variation of the dynamic photovoltage responsivity (or,the contrast sensitivity d VOC /d P )as a function of P in both devices A and B.In device B,the contrast sensitivity exceeds 106V/W at P ≈10nW,and the ∼P −1dependence is identical in both devices.The voltage response to (c)turning ON and (d)turning OFF of incident light in device B,showing exponential rise and fall behaviors with millisecond time scales.In all cases,the incident light wavelength was 488nm.1f).Consequently,only a relatively small photocurrent (denoted by the small red part of the surface of the Dirac cone),limited by the small number of photoexcited holes that can inject into graphene,is possible under forward bias.Increasing the incident light power beyond this point will not allow any more photoexcited holes to inject into graphene since E ′f (Gr)cannot lie below E ′f,h (Si).However,an applied reverse-bias can lift E f (Gr)to higher values,as shown in Figure 1g,opening up a large number of accessible states for the holes to inject into and allowing a complete collection of the injected holes.As a result,the photocurrent,which is signi ﬁcantly suppressed near V ≈0,can completely recover under small reverse biases,as seen in Figure 1e.(These deviations from a conventional photodiode behavior are explained with additional schematics in the Supporting Information document).The photocurrent saturates for a given incident power at higher reverse biases (Figure 1e)when all photoexcited holes can inject into graphene.The photocurrent saturates for a given bias at higher incident powers (see later,Figure 3a)when the quasi-Fermi level in graphene,E ′f (Gr),reaches the quasi-Fermi levelfor holes inSi,E ′f,h (Si).The voltage-induced tunability of therelative positions of the Fermi levels that enables a highphotocurrent responsivity (seelater),along with the low dark-current density (≪1μA/cm 2),results in a tunable photo-current ON/OFF ratio exceeding 104at V =−2V and at a light intensity of 260pW/μm 2making them highly suitable for low-power switches in micrometer-scale optoelectronic circuitry.Figure 2a shows the photovoltage responsivity in device B as a function of incident power.At the lowest incident power,the absolute device responsivity RV (=V OC /P ,VOC is the opencircuit voltage)exceeds 107V/W,which is signi ﬁcantly largerthan that of previously reported graphene-based devices,7Figure 3.(a)The (dark-currentsubtracted)photocurrent (in device A)as a function of incident power for di ﬀerent applied voltages,showing strongvoltage dependence at higher powers.The inset shows the photoresponse of both devices A and B.A device-independent responsivity of 225mA/W was obtained at V =−2V that remains constant over the entire range of powers we were able to test (∼6orders of magnitude).(b)IPCE map of device A,demonstrating the high photon-to-electron conversion e ﬃciency of ∼57%that can be tuned to remain constant over a large range of incident powers under reverse-bias operation.(c)Variation of IPCE as a function of the incident power at representative operational voltages in device A.The dashed lines are guides to the eye.The IPCE remains nearly unchanged atV =−2V and goes →0at V =0.2V.This small voltagerange (−2to 0.2V)can be used as a switch to turn the photocurrent on and o ﬀwith a high switching ratio (>104,see text).(d)Transient photocurrent response in device B,showing that the devices were capable of switching within a few milliseconds.In all cases,the incident light wavelength was 488nm.rendering it a highly sensitive device for weak signal detection/ switching/photometry.For applications such as weak-signal imaging,video-recording,or analytical chemistry,sensitivity to extremely small changes in incident power is another important parameter.To quantify this,we deﬁne the dynamic photo-voltage responsivity or contrast sensitivity as d V OC/d P.Figure 2b shows the contrast sensitivity in both devices A and B, measured over a broad range of incident powers.Weﬁnd that the contrast sensitivity is remarkably independent of the device areas,exceeding106V/W at low light intensities.In addition, these devices show sharp rise in both the absolute and dynamic responsivity as the incident power decreases,which is a rather convenient feature appropriate for weak-signal detection.For any photodetector,the detection limit is speciﬁed by the noise-equivalent-power(NEP),23which is the incident power at which the signal is equal to the RMS dark noise density(S V), measured within a speciﬁed bandwidth(commonly1Hz),that is,NEP=S V/R V.To obtain S V,a large sequence of voltage ﬂuctuations(V noise)was measured using a voltmeter set to0.5s integration time(which corresponds to a bandwidth of1Hz),24 while keeping the device in darkness.The RMS noise density was then calculated as S V=(⟨V2noise⟩/1Hz)1/2.For the device B,we obtained S V=1.66×10−5V/Hz1/2.From the lowest measured power of10nW,R V≈1.8×107V/W,and hence NEP=9.2×10−13W/Hz1/2(implying that in the photovoltage mode,P∼picoWatt incidences can be detected above the noise level,when integrated over0.5s),and speciﬁc detectivity D*=(device area)1/2/NEP=7.69×109Jones(cm Hz1/2/W). Further,at10nW incidence,S V/(d V OC/d P)≈5pW/Hz1/2, indicating that these detectors are capable of distinguishing materials with transmittance,T=0.9995(to compare, transmittance of monolayer graphene is about0.977)within a 0.5s integration time,making it extremely useful for absorption spectroscopy applications of ultradilute or ultrathin materials. We have also examined the transient-response time scale of these detectors,to ascertain how quickly they“switch”when an incident light is turned“on”or“oﬀ”.To do this,an optical chopper was placed in front of a laser source,and the photovoltage was recorded as a function of time using an oscilloscope triggered by the same chopper.Figure2c and d show the photovoltage rise and fall response times obtained using a50ms timed optical chopper(which took about∼1.7 ms to completely chop the beam).In both cases,the response could beﬁtted to an exponential function as shown,with time scales of a few milliseconds(with the zero on the time axis corresponding to the point of opening and closing of the chopper).When tested at higher chopping speeds no change was found in the time-scale of the transient response,indicating that the response-time of a few milliseconds was intrinsic to the devices.We also note that the oscilloscope used had an input-impedance rated at1MΩin parallel with a20pF capacitance. The eﬀective time constant of the oscilloscope,RC,=20×10−6seconds,is∼3orders of magnitude smaller than the rise/ fall time of the devices tested and hence did not aﬀect detector transient response in any signiﬁcant way.In addition,the long-term response to a periodically switching light was found to be extremely stable,with a variation of the OFF and ON state photovoltages well within±2.5%and±5%,respectively,over 1000switching cycles,and with absolutely no sign of drift or aging eﬀects even after10days(see SI).The stable,millisecond level response is quite appealing for applications such as high-speed photography,videography,and rapid optical analysis of chemical reactions that require tens of milliseconds of response time.We now turn to the photocurrent response.Figure3a shows the photocurrent I ph as a function of incident powers for various biases in device A.In the inset,the response for V=−2 V has been plotted for both devices.Weﬁnd that the response not only remains independent of device size but scales in an absolutely linear manner over six decades of incident power. The photocurrent responsivity of∼225mA/W is1−2orders-of-magnitude higher than those of previously reported graphene-based photodetectors5−14and a variety of normal-incidence(i.e.,not waveguide coupled)Ge/Si photodetec-tors,25making it an extremely sensitive linear photodetector and photometer with a large dynamic range.The responsivity can be almost doubled atλ=850nm,as we show later.Also, the presented power range is only limited by our instrumental capabilities,and with higher reverse-biases,the linear response can potentially extend much beyond the experimentally tested range.The range-independent photocurrent responsivity and the d V OC/d P∼1/P dependence suggests that the underlying mechanism in our devices is photovoltaic5−8,10and not hot-carrier-induced or photothermoelectric.9,11,14Figure3b is a3D incident photon conversion eﬃciency(IPCE(V,P)=(I ph(V,P)/ P)×(hc/eλ))map of device A.By applying a low reverse bias, the device can operate with an IPCE max∼57%over four orders-of-magnitude incident power.As shown in Figure3c,by applying diﬀerent biases,it is also possible to almost completely tune the IPCE between0<IPCE<IPCE max,which is extremely useful for brightness adjustment in imaging devices. Figure3d shows the typical rise and fall times in response to a chopper.In this case,the responses could not beﬁtted to exponential functions.Nevertheless,it is clear that even in the case of photocurrent detection,the response is rapid enough (within a few milliseconds)for many imaging and analytical applications.The dark noise power spectral density(obtained in a manner similar to the one described earlier for S V)was approximately S I=11pA/Hz1/2.For the undoped1LG/Si device at488nm,this gave a NEP=S I/R I=50pW/Hz1/2, which corresponds to a speciﬁc detectivity of1.4×108Jones (cm Hz1/2/W),making it quite a sensitive photodetector even in the photocurrent mode.Moreover,the sensitive behavior of these detectors remain intact over the entire visible range of incident wavelengths,as seen from the spectral dependence of NEP and D*in Figure4,which is an important criterion for broadband imaging applications.The photocurrent responsivity and hence conversion eﬃciencies could be further improved by increasing the graphene layer-thickness,and yer-thickening pro-vides more states for the holes to inject into,and was achieved by multiple stacking of monolayer sheets of graphene.Doping the graphene sheets can be expected to increase their sheet conductance,and has been utilized in the past to enhance the performance of graphene/Si Solar cells.21In our devices,p-type doping of the graphene sheets was obtained by drop-casting1-pyrenecarboxylic acid(PCA),on the graphene sheets.In the past,we had reported how theπ-stacking interaction between the pyrene part of PCA and graphene can lead to a stable but noncovalent attachment of these molecules to graphene and had performed extensive structural,electronic,optical,and electrochemical characterizations of PCA-functionalized gra-phene.26−28In particular,we have found that attachment of PCA does not seem to have a very signiﬁcant eﬀect on the thickness of graphene layers26but increases the surfaceroughness of graphene by about 0.2nm (see SI).In addition,Raman spectra of PCA-doped graphene shows an increase in the D-band (see SI)that is most likely due to the presence of large number of edges in the graphene-like crystalline structure of pyrene.Figure 5a shows the resulting p-type doping e ﬀect of PCA on a separately prepared 3-terminal 1LG transistor.The drain current minimum of pristine graphene devices is at a positive voltage,indicating that the “pristine ”graphene is already p-doped,either due to environment 29or contaminant 30e ﬀects.The application of PCA shifts the drain current minimum to higher gate voltage values,indicating an additional p-doping e ﬀect.Figure 5b and c compares the spectral dependence of IPCE and photocurrent responsivity in a three-layer graphene (3LG)/Si device (with and without doping)vis-a -vis the 1LG/Si device A,all of which had the same junction area.The IPCE of 3-layer graphene (3LG)/Si device improves over that of the 1LG/Si device,remaining at ∼60%over a larger window of visible wavelengths.The corresponding responsivity grows to higher values (up to ∼0.4A/W at λ=885nm)in the 3LG/Si device,providing a greater operational bandwidth compared to the 1LG/Si device.After PCA doping,the IPCE and responsivity values increase further over a large window of wavelengths,with maximum IPCE ≈65%between 550and 800nm;and R I ≈435mA/W for 850nm <λ<900nm,making it highly appealing for on-chip applications that could bene ﬁt from the use of energy-e ﬃcient 850nm VCSELs.31We note that,as in the case of the 1LG/Si device,these improved responsivity/IPCE values could be seamlessly extended to high-power applications using low reverse biases (not shown).Finally,we discuss the nature of the interface in these junctions.We have performed extensive measurements of the Schottky barrier height of these junctions,using graphene,doped graphene,and even control devices of Ti/Au with Si (to obtain the “metallic ”side of the junction with a range of work-function values).Since p-doping lowers the Fermi level ofgraphene with respect to its Dirac point,one expects a largerSchottky barrier height,32−35for the p-doped graphene samples.Surprisingly,we found that the Schottky barrier ϕbn =0.79±0.05eV was nearly independent of the “metal ”being used,a fact that can be traced to the nature of the graphene/Si junction.In an ideal Si Schottky junction,the interfaces between the metal and Si is expected to be atomically clean to prevent the formation of any surface states on Si,resulting in the formation of an “unpinned ”Schottky barrier junction,36whose barrier height ϕbn (=ϕm −χSi )is dependent on the work-function of themetal,ϕm .In thermal equilibrium,the Fermi levels on both sides of the junction get aligned,and under illumination,behaves as conventional photodiodes with a reverse-bias independent photocurrent.In contrast,we believe that in our devices,the inadvertent formation of natural oxide on the Si surface,allows the energy bands in Si to naturally “pin ”itself to its own surface states.This results in a Schottky barrier which is still rectifying but with a barrier-heightwhich is pinned to its Bardeen limit of ϕbn ∼0.8eV,36independent of the work function of the metal.With the Fermi level of Si pinned to its own charge-neutrality level,the thermal equilibrium position of the Fermi level of graphene at zero bias is determined by its own intrinsic doping level.UV-emission spectroscopy 37has shown that CVD grown graphene can have work functions as high as 5.2eV (due to substrate-induced e ﬀects),implyingthat Figure 4.Spectral dependence of the noise-equivalent-power (NEP)and speci ﬁc detectivity (D *)of device B in the photocurrent mode.The minimum NEP and the maximum D *were found to be 33pW/Hz 1/2and 2.1×108Jones,respectively,at λ=730nm.Figure 5.(a)Variation of drain −current as a function of gate voltage in a monolayer graphene 3-terminal transistor without and with PCA doping.The shift of the minima toward higher gate voltages is indicative of p-type doping due to PCA.(b)Spectral dependence of IPCE (200nm <λ<1100nm)of deviceA (1LG/Si)versus a 3LG/Sidevicebeforeand after dopingwith PCA.(c)Spectral responsivity for the same devices within thesame wavelength window.The improved bandwidth and e ﬃciency/response is clearly visible with increased layer thickness and doping.The doped 3LG/Si device has the best IPCE exceeding 60%over a broad range and with a maximum IPCE exceeding 65%.The responsivity peaks at ≈435mA/W for 850nm <λ<900nm.the Fermi level can lie very close to the valence band edge of Si, eﬀectively preventing the injection of photoinduced carriers into graphene under zero applied bias.We believe that this causes the suppressed photocurrent at zero-bias seen in our devices.This turns out to be an attractive feature,as it allows for an additional tunability of the photocurrent that results in the voltage-controllable responsivity discussed before. Hence,graphene/Si heterojunctions can be used for a variety of tunable optoelectronic devices with high responsivities over a broad spectral bandwidth in the visible region.Their high responses and low dark-currents render them with a high switching ratio and low dark-power consumption.The picoWatt-level detection capability in both photovoltage and photocurrent modes along with linear operation demonstrated up to milliwatts of incident powers reﬂects a signiﬁcantly large dynamic operational range.This,in addition to their milli-second-responses makes them versatile and highly sensitive photodetectors for a variety of imaging,metrology,and analytical applications over a broad range of input powers. The voltage-tunability allows brightness control for variable light conditions and enables linear operation over a large dynamic range.The responsivity peaking at850nm is ideal for coupling with VCSELs operating at these wavelengths31for low-power integrated optoelectronic circuitry.Built using simple,low-cost,and scalable methods,additional improve-ments of CVD-graphene quality,38integration with as wave-guides,25and plasmonic7,8or microcavity11,12enhancements could lead to greater performances.Moreover,graphene junctions with other semiconductors such as Ge,GaAs,and so forth can provide furtherﬂexibility for controlling the peak-responsivity,spectral bandwidth,and high-speed operations.■ASSOCIATED CONTENT*Supporting InformationExperimental details about the synthesis of graphene and device fabrication;characterization of graphene samples;responsivity measurement as function of power and wavelength;time-dependent switching response;AFM and Raman character-ization of PCA-doped graphene.This material is available freeof charge via the Internet at .■AUTHOR INFORMATIONCorresponding Author*E-mail:x.an@(X.A.);s.kar@(S.K.).NotesThe authors declare no competingﬁnancial interest.■ACKNOWLEDGMENTSWe acknowledge theﬁnancial support provided by the Northeastern University start-up and internal seed grants provided to S.K.and Y.J.J.and partial support from an NSFaward:ECCS-1202376.■REFERENCES(1)Yan,R.;Gargas,D.;Yang,P.Nanowire Photonics.Nat.Photonics 2009,3,569−576.(2)Konstantatos,G.;Howard,I.;Fischer,A.;Hoogland,S.;Clifford, J.;Klem,E.;Levina,L.;Sargent,E.H.Ultrasensitive solution-cast quantum dot photodetectors.Nature2006,442,180−183.(3)Prins,F.;Buscema,M.;Seldenthuis,J.S.;Etaki,S.;Buchs,G.; Barkelid,M.;Zwiller,V.;Gao,Y.;Houtepen,A.J.;Siebbeles,L.D.A.; Zant,H.S.J.Fast and Efficient Photodetection in Nanoscale Quantum-Dot Junctions.Nano Lett.2012,12,5740−5743.(4)Avouris,P.;Freitag,M.;Perebeinos,V.Carbon-nanotubePhotonics and Optoelectronics.Nat.Photonics2008,2,341−350. 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(完整版)光伏行业英文词汇

光伏行业英文词汇Cell 电池Crystalline silicon 晶体硅Photovoltaic 光伏bulk properties 体特性at ambient temperature 在室温下wavelength 波长absorption coefficient 吸收系数electron-hole pairs 电子空穴对photon 光子density 密度defect 缺陷surface 表面electrode 电极p－type for hole extraction p型空穴型n－type for electron extraction n 型电子型majority carriers 多数载流子minority carriers 少数载流子surface recombination velocity （SRV）表面复合速率back surface field （BSF）背场at the heavily doped regions 重掺杂区saturation current density Jo 饱和电流密度thickness 厚度contact resistance 接触电阻concentration 浓度boron 硼Gettering techniques吸杂nonhomogeneous 非均匀的solubility 溶解度selective contacts 选择性接触insulator 绝缘体oxygen 氧气hydrogen 氢气Plasma enhanced chemical vapor deposition PECVDInterface 界面The limiting efficiency 极限效率reflection 反射light- trapping 光陷intrinsic material 本征材料bifacial cells 双面电池monocrystalline 单晶float zone material FZ－Si Czochralski silicon Cz－Si industrial cells 工业电池a high concentration of oxygen 高浓度氧Block or ribbon 块或硅带Crystal defects 晶体缺陷grain boundaries 晶界dislocation 位错solar cell fabrication 太阳能电池制造impurity 杂质P gettering effect 磷吸杂效果Spin－on 旋涂supersaturation 过饱和dead layer 死层electrically inactive phosphorus 非电活性磷interstitial 空隙the eutectic temperature 共融温度boron－doped substrate 掺硼基体passivated emitter and rear locally diffused cells PERL电池losses 损失the front surface 前表面metallization techniques 金属化技术metal grids 金属栅线laboratory cells 实验室电池the metal lines 金属线selective emitter 选择性发射极photolithographic 光刻gradient 斜度precipitate 沉淀物localized contacts 局部接触point contacts 点接触passivated emitter rear totally diffused PERTsolder 焊接bare silicon 裸硅片high refraction index 高折射系数reflectance 反射encapsulation 封装antireflection coating ARC减反射层an optically thin dielectric layer 光学薄电介层interference effects 干涉效应texturing 制绒alkaline solutions 碱溶液etch 刻蚀/腐蚀anisotropically 各向异性地plane 晶面pyramids 金字塔a few microns 几微米etching time and temperature 腐蚀时间和温度manufacturing process 制造工艺process flow 工艺流程high yield 高产量starting material 原材料solar grade 太阳级a pseudo－square shape 单晶型状saw damage removal 去除损伤层fracture 裂纹acid solutions 酸溶液immerse 沉浸tank 槽texturization 制绒microscopic pyramids 极小的金字塔size 尺寸大小hinder the formation of the contacts 阻碍电极的形成the concentration，the temperature and the agitation of the solution 溶液的浓度，温度和搅拌the duration of the bath 溶液维持时间alcohol 酒精improve 改进增加homogeneity 同质性wettability 润湿性phosphorus diffusion 磷扩散eliminate adsorbed metallic impurities 消除吸附的金属杂质quartz furnaces 石英炉quartz boats 石英舟quartz tube 石英炉管bubbling nitrogen through liquid POCL3 小氮belt furnaces 链式炉back contact cell 背电极电池reverse voltage 反向电压reverse current 反向电流amorphous glass of phospho－silicates 非晶玻璃diluted HF 稀释HF溶液junction isolation 结绝缘coin－stacked 堆放barrel－type reactors 桶状反应腔fluorine 氟fluorine compound 氟化物simultaneously 同时地high throughput 高产出ARC deposition 减反层沉积Titanium dioxide TiO2Refraction index 折射系数Encapsulated cell 封装电池Atmospheric pressure chemical vapor deposition APCVDSprayed from a nozzle 喷嘴喷雾Hydrolyze 水解Spin －on 旋涂Front contact print 正电极印刷The front metallization 前面金属化Low contact resistance to silicon 低接触电阻Low bulk resistivity 低体电阻率Low line width with high aspect ratio 低线宽高比Good mechanical adhesion 好机械粘贴solderability 可焊性screen printing 丝网印刷comblike pattern 梳妆图案finger 指条bus bars 主栅线viscous 粘的solvent 溶剂back contact print 背电极印刷both silver and aluminum 银铝form ohmic contact 形成欧姆接触warp 弯曲cofiring of metal contacts 电极共烧organic components of the paste 浆料有机成分burn off 烧掉sinter 烧结perforate 穿透testing and sorting 测试分选I-V curve I-V曲线Module 组件Inhomogeneous 不均匀的Gallium 镓Degradation 衰减A small segregation coefficient 小分凝系数Asymmetric 不对称的High resolution 高分辨率Base resistivity 基体电阻率The process flow 工艺流程Antireflection coating 减反射层Cross section of a solar cell 太阳能电池横截面Dissipation 损耗Light－generated current 光生电流Incident photons 入射光子The ideal short circuit flow 理想短路电路The depletion region 耗尽区Quantum efficiency 量子效率Blue response 蓝光效应Spectral response 光谱响应Light－generated carriers 光生载流子Forward bias 正向偏压Simulation 模拟Equilibrium 平衡Superposition 重合The fourth quadrant 第四象限The saturation current 饱和电流Io Fill factor 填充因子FF Graphically 用图象表示The maximum theoretical FF 理论上Empirically 经验主义的Normalized Voc 规范化VocThe ideality factor n－factor 理想因子Terrestrial solar cells 地球上的电池At a temperature of 25C 25度下Under AM1.5 conditions 在AM1.5环境下Efficiency is defined as ××定义为Fraction 分数Parasitic resistances 寄生电阻Series resistance 串联电阻Shunt resistance 并联电阻The circuit diagram 电路图Be sensitive to temperature 易受温度影响The band gap of a semiconductor 半导体能隙The intrinsic carrier concentration 本征载流子的浓度Reduce the optical losses 减少光损Deuterated silicon nitride 含重氢氮化硅Buried contact solar cells BCSC Porous silicon PS 多孔硅Electrochemical etching 电化学腐蚀Screen printed SP 丝网印刷A sheet resistance of 45-50 ohm/sq 45到50方块电阻The reverse saturation current density Job 反向饱和电流密度Destructive interference 相消干涉Surface textingInverted pyramid 倒金字塔Four point probe 四探针Saw damage etchAlkaline 碱的Cut groove 开槽Conduction band 导带Valence band 价带B and O simultaneously in silicon 硼氧共存Iodine/methanol solution 碘酒/甲醇溶液Rheology 流变学Spin－on dopants 旋涂掺杂Spray－on dopants 喷涂掺杂The metallic impurities 金属杂质One slot for two wafers 一个槽两片Throughput 产量A standard POCL3 diffusion 标准POCL3扩散Back－to－back diffusion 背靠背扩散Heterojunction with intrinsic thin －layer HIT电池Refine 提炼Dye sensitized solar cell 染料敏化太阳电池Organic thin film solar cell 有机薄膜电池Infra red 红外光Unltra violet 紫外光Parasitic resistance 寄生电阻Theoretical efficiency 理论效率Busbar 主栅线Kerf loss 锯齿损失Electric charge 电荷Covalent bonds 共价键The coefficient of thermal expansion (CTE) 热膨胀系数Bump 鼓泡Alignment 基准Fiducial mark 基准符号Squeegee 橡胶带Isotropic plasma texturing 各向等离子制绒Block-cast multicrystalline silicon 整铸多晶硅Parasitic junction removal 寄生结的去除Iodine ethanol 碘酒Deionised water 去离子水Viscosity 粘性Mesh screen 网孔Emulsion 乳胶Properties of light 光特性Electromagnetic radiation 电磁辐射The visible light 可见光The wavelength，denoted by R 用R 表示波长An inverse relationship between……and……given by the equation：相反关系，可用方程表示Spectral irradiance 分光照度……is shown in the figure below. Directly convert electricity into sunlight 直接将电转换成光Raise an electron to a higher energy state 电子升入更高能级External circuit 外电路Meta-stable 亚稳态Light-generated current 光生电流Sweep apart by the electric field Quantum efficiency 量子效率The fourth quadrant 第四象限The spectrum of the incident light 入射光谱The AM1.5 spectrumThe FF is defined as the ratio of ……to……Graphically 如图所示Screen-printed solar cells 丝网印刷电池Phosphorous diffusion 磷扩散A simple homongeneous diffusion 均匀扩散Blue response 蓝光相应Shallow emitter 浅结Commercial production 商业生产Surface texturing to reduce reflection 表面制绒Etch pyramids on the wafer surface with a chemical solutionCrystal orientationTitanium dioxide TiO2PasteInorganic 无机的Glass 玻璃料DopantCompositionParticle sizeDistributionEtch SiNxContact pathSintering aidAdhesion 黏合性Ag powderMorphology 形态CrystallinityGlass effect on Ag/Si interface Reference cellOrganicResin 树脂Carrier 载体Rheology 流变性Printability 印刷性Aspect ratio 高宽比Functional groupMolecular weightAdditives 添加剂Surfactant 表面活性剂Thixotropic agent 触变剂Plasticizer 可塑剂Solvent 溶剂Boiling pointVapor pressure蒸汽压Solubility 溶解性Surface tension 表面张力Solderability Viscosity 黏性Solids contentFineness of grind ，研磨细度Dried thicknessFired thicknessDrying profilePeak firing temp300 mesh screenEmulsion thickness 乳胶厚度StorageShelf life 保存期限Thinning 稀释Eliminate Al bead formation 消除铝珠Low bowingWet depositPattern design: 100um*74太阳电池solar cell单晶硅太阳电池single crystalline silicon solar cell多晶硅太阳电池so multi crystalline silicon solar cell非晶硅太阳电池amorphous silicon solar cell薄膜太能能电池Thin-film solar cell多结太阳电池multijunction solar cell 化合物半导体太阳电池compound semiconductor solar cell用化合物半导体材料制成的太阳电池带硅太阳电池silicon ribbon solar cell光电子photo-electron短路电流short-circuit current （Isc）开路电压open-circuit voltage （V oc）最大功率maximum power (Pm)最大功率点maximum power point最佳工作点电压optimum operating voltage (Vn)最佳工作点电流optimum operating current (In)填充因子fill factor(curve factor)曲线修正系数curve correction coefficient太阳电池温度solar cell temperature串联电阻series resistance并联电阻shunt resistance转换效率cell efficiency暗电流dark current暗特性曲线dark characteristic curve光谱响应spectral response(spectral sensitivity)太阳电池组件module(solar cell module)隔离二极管blocking diode旁路二极管bypass (shunt) diode组件的电池额定工作温度NOCT（nominal operating cell temperature）短路电流的温度系数temperature coefficients of Isc开路电压的温度系数temperature coefficients of V oc峰值功率的温度系数temperature coefficients of Pm组件效率Module efficiency峰瓦watts peak额定功率rated power额定电压rated voltage额定电流rated current太阳能光伏系统solar photovoltaic (PV) system并网太阳能光伏发电系统Grid-Connected PV system独立太阳能光伏发电系统Stand alone PV system太阳能控制器solar controller逆变器inverter孤岛效应islanding逆变器变换效率inverter efficiency方阵(太阳电池方阵) array （solar cell array）子方阵sub-array (solar cell sub-array)充电控制器charge controller直流/直流电压变换器DC/DC converter(inverter)直流/交流电压变换器DC/AC converter(inverter)电网grid太阳跟踪控制器sun-tracking ontroller 并网接口utility interface光伏系统有功功率active power of PV power station光伏系统无功功率reactive power of PV power station光伏系统功率因数power factor of PV power station公共连接点point of common coupling 接线盒junction box发电量power generation输出功率output power交流电Alternating current断路器Circuit breaker汇流箱Combiner box配电箱Distribution box电能表Supply meter变压器Transformer太阳能光伏建筑一体化Building-integrated PV (BIPV)辐射radiation太阳辐照度Solar radiation散射辐照（散射太阳辐照）量diffuse irradiation(diffuse insolation)直射辐照direct irradiation (direct insolation)总辐射度(太阳辐照度) global irradiance (solar global irradiance)辐射计radiometer方位角Azimuth angle倾斜角Tilt angle太阳常数solar constant大气质量(AM) air mass太阳高度角solar elevation angle标准太阳电池standard solar cell （reference solar cell）太阳模拟器solar simulator太阳电池的标准测试条件为：环境温度25±2℃，用标准测量的光源辐照度为1000W/m2 并且有标准的太阳光谱辐照度分布。

纳米零价铁的制备及应用研究进展

CHEMICAL INDUSTRY AND ENGINEERING PROGRESS 2017年第36卷第6期·2208·化工进展纳米零价铁的制备及应用研究进展谢青青，姚楠（浙江工业大学化学工程学院，工业催化研究所，绿色化学合成技术国家重点实验室培育基地，浙江杭州 310032）摘要：纳米零价铁催化材料具有价格低廉、比表面积大、还原性强、吸附性和反应活性优异等优点，可通过不同机制降解各类环境污染物（如重金属、无机阴离子、放射性元素、卤代有机化合物、硝基芳香化合物、环境内分泌干扰物等），被视为一种有着广阔应用前景的新材料，是目前国内外研究的热点。

本文详细介绍了纳米零价铁的典型制备方法（如物理法、化学液相还原法、热分解法、碳热法、多元醇法等）和新型绿色合成技术，同时总结了纳米零价铁在环境污染物处理和催化方面的最新应用进展，阐述了纳米零价铁在各类反应中的作用机理和效能，并提出了纳米零价铁催化材料在实际应用中尚需解决的团聚和氧化等问题，未来的研究目标应着重于改进或开发新制备方法以降低成本和拓宽纳米零价铁催化材料的应用范围。

关键词：纳米零价铁；制备；还原；催化中图分类号：TB39 文献标志码：A 文章编号：1000–6613（2017）06–2208–07 DOI ：10.16085/j.issn.1000-6613.2017.06.034Progress of preparation and application of nanoscale zero-valent ironXIE Qingqing ，YAO Nan（College of Chemical Engineering ，Institute of Industrial Catalysis ，State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology ，Zhejiang University of Technology ，Hangzhou 310032，Zhejiang ，China ）Abstract ：Nanoscale zero-valent iron catalytic materials have advantages of low cost ，high reactionactivity ，high specific surface area and excellent adsorption properties. The excellent performances of these materials in various environmental pollutants （e.g. heavy metals ，inorganic anions ，radioactive elements ，halogenated organic compounds ，nitroaromatic compounds and endocrine-disrupting chemicals ）remediation through different degradation mechanisms have made them be regarded as a new type of material that having broad application prospect. In this review ，the typical preparation methods ，including physical method ，chemical liquid phase reduction method ，thermal decomposition method ，carbothermal synthesis and polyol process ，and novel green synthesis technology ，of nanoscale zero-valent iron are introduced in detail. Moreover ，the applications as well as the reaction mechanism and efficiency of nanoscale zero-valent iron in environmental pollution treatment and catalysis are summarized. In addition ，some unresolved scientific problems including the oxidation and the agglomeration of nanoscale zero-valent iron are mentioned. It also suggests that the future research should be focused on the improvement or development of new synthetic method to reduce the cost and to extend the application field of the nanoscale zero-valent iron materials. Key words ：nanoscale zero-valent iron ；preparation ；reduction ；catalysis米零价铁的制备及其应用。

边缘化学修饰锯齿型石墨烯纳米带的电子结构

１理论方法
于第一原理密度泛函进行模拟计算的软件。结构优化过程中，用局域密度近似（Ｄ，采ＬＡ）以确定能量最低的几何构型。在此基础上，采用广义梯度近似（Ｇ方法处理电子之间相ＧＡ）
对有限宽ＺＮｓ其表现为半导体性，ＧＲ，具有自旋极化基态，ＧＲ两边局域电子态的自在ＮＳ旋方向相反。最近，ｏ等人报道了外加垂直ＺＮｓＳｎ４ＧＲ轴线的电场可使体系变为半金属态，即一个自旋方向表现金属
性，另一个自旋方向能隙增大，相应结果为实验上制备出石墨烯基自旋开关提供了重要的理论依据。Ｙｕ等
２２能带结构．
在这部分内容中，主要是针对不同边缘饱和ＺＮｓ的能带结构进行讨论。由于体系的电学性质主要取ＧＲ决于其费米面附近的电子结构，因此，们我们主要研究费米面附近能量在一０４ａ一．Ｈ我．Ｈ０４ａ能量区间的电
其中－ｏ＝一７０８５ａＥ＝一０．２Ｈ，Ｅ ‰ ６．９Ｈ、６６９１３ａ
氧原子饱和纳米带的结合能
Ｅ０＝Ｅｆ一２×Ｅ一Ｅ一＝一５．５０６７９６４一（一２× ４９２— ０．２）＝一１１１ａ７．６６９１３．９Ｈ，
过对纳米带边缘修饰来控制纳米带的电子结构，相应的计算结果为实验上制备石墨烯纳米带提供了理论依
据。
参考文献：

01-Efficient silicon heterojunction solar cells combining a PEDOT：PSS Hole-collector-叶继春

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边缘化学修饰锯齿型石墨烯纳米带的电子结构

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