BR4F高压二极管
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Mark
4.0kV 0.8A HIGH VOLTAGE DIODES
Maximum Reverse Recovery Time Trr at 25°C
BR4F
High speed switching
High Current
High surge resisitivity for CRT discharge
High reliability design
High Voltage
Absolute Maximum Ratings
Items
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
Junction Temperature
Allowable Operation Case Temperature
Symbols
V RRM
I O
I FSM
T j
Tc
Condition
Ta=25°C,Resistive Load0.8
155
125
-40 to +155
Units
kV
A
A peak
°C
°C
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Maximum Forward Voltage Drop
Maximum Reverse Current
Symbols
V F
IR1
IR2
Conditions
at 25°C,I F
at 25°C,V R
at 100°C,V
Units
V
uA
uA Junction Capacitance Cj at 25°C,V R
Storage Temperature T stg
is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Outline Drawings : mm
BR4F
Cathode Mark
GETE ELECTRONICS CO.,LTD
E-mail:sales@
2012
=0V,f=1MHz --
BR4F
Type
BR4F
BR4F
11
50
5.0
20
4.0
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
pF HVCA TM
BR4F
=V RRM
R =V RRM
150nS
peak
=I F(AV)