5STP33L2800中文资料

ABB Semiconductors AG reserves the right to change specifications without notice.
V DSM =2800V I TAVM =3740A I TRMS =5880A I TSM =60000A V T0=0.95V r T =0.100m Ω
Phase Control Thyristor
5STP 33L2800
Doc. No. 5SYA1011-03 Sep. 01
•Patented free-floating silicon technology •Low on-state and switching losses
•Designed for traction, energy and industrial applications •Optimum power handling capability •
Interdigitated amplifying gate
Blocking
Part Number 5STP 33L28005STP 33L26005STP 33L2200Conditions
V DRM V RRM
2800 V 2600 V 2200 V f = 50 Hz, t p = 10ms V RSM13000 V
2800 V 2400 V
t p = 5ms, single pulse I DRM ≤ 400 mA V DRM I RRM ≤ 400 mA
V RRM
T j = 125°C
dV/dt crit
1000 V/µs
Exp. to 0.67 x V DRM , T j
= 125°C
Mechanical data
F M
Mounting force
nom.70kN min.63kN max.
84kN
a
Acceleration Device unclamped Device clamped 50100m/s 2m/s 2m Weight
1.45kg D S Surface creepage distance 36mm D a
Air strike distance
15mm
On-state
I TAVM Max. average on-state current3740A Half sine wave, T C = 70°C
I TRMS Max. RMS on-state current5880A
I TSM Max. peak non-repetitive60000A tp=10ms T j = 125°C
surge current65000A tp=8.3ms After surge: I2t Limiting load integral18000kA2s tp=10ms V D = V R = 0V
17500kA2s tp=8.3ms
V T On-state voltage 1.23V I T=3000A
V T0Threshold voltage0.95V I T=2000 - 6000A T j = 125°C r T Slope resistance0.100mΩ
I H Holding current30-100mA T j=25°C
15-60mA T j=125°C
I L Latching current100-
500mA T j=25°C
100-
300
mA T j=125°C
Switching
di/dt crit Critical rate of rise of on-state250A/µs Cont. f = 50 Hz V D≤ 0.67⋅V DRM , T j = 125°C current500A/µs I TRM = 4500 A
60 sec.
f = 50Hz I
FG
= 2 A, t r = 0.5 µs
t d Delay time≤ 3.0µs V D = 0.4⋅V DRM I FG = 2 A, t r = 0.5 µs
t q Turn-off time≤400µs V D ≤ 0.67⋅V DRM I TRM = 4500 A, T j = 125°C
dv D/dt = 20V/µs V R > 200 V, di T/dt = -5 A/µs Q rr Recovery charge min2000µAs
max4000µAs
Triggering
V GT Gate trigger voltage 2.6V T j = 25°
I GT Gate trigger current400mA T j = 25°
V GD Gate non-trigger voltage0.3V V D =0.4 x V DRM
I GD Gate non-trigger current10mA V D = 0.4 x V DRM
V FGM Peak forward gate voltage12V
I FGM Peak forward gate current10A
V RGM Peak reverse gate voltage10V
P G Gate power loss3W
Thermal
T jmax Max. operating junction temperature range
125°C T stg Storage temperature range -40…140°C R thJC
Thermal resistance 14K/kW Anode side cooled junction to case
14K/kW Cathode side cooled 7K/kW
Double side cooled R thCH
Thermal resistance case to 3K/kW Single side cooled heat sink
1.5K/kW
Double side cooled
Fig. 1Transient thermal impedance junction to case.
Fig. 2On-state characteristics.
T j =125°C, 10ms half sine
Fig. 3On-state characteristics.
Fig. 4On-state power dissipation vs. mean on-state current. Turn - on losses excluded.Fig. 5Max. permissible case temperature vs.
mean on-state current.
Fig. 6Surge on-state current vs. pulse length.
Half-sine wave.Fig. 7Surge on-state current vs. number of
pulses. Half-sine wave, 10 ms, 50Hz.
Fig. 8Gate trigger characteristics.Fig. 9Max. peak gate power loss.
Fig. 10Recovery charge vs. decay rate of on-state current.Fig. 11Peak reverse recovery current vs. decay
rate of on-state current.
Turn - off time, typical parameter relationship.
Fig. 12t q /t q1 = f 1(T j )Fig. 13t q /t q1 = f 2(-di T /dt)Fig. 14t q /t q1 = f 3(dv/dt)
t q = t q1 • f 1(T j ) • f 2(-di T /dt) • f 3(dv/dt)
t q1 :at normalized values (see page 2)t q : at varying conditions
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc. No. 5SYA1011-03 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419Fax +41 (0)62 888 6306
Turn-on and Turn-off losses
Fig. 15W on = f(I T , t P ), T j = 125°C.
Half sinusoidal waves.Fig. 16W on = f(I T , di/dt), T j = 125°C.
Rectangular waves.
Fig. 17W off = f(V 0,I T ), T j = 125°C.
Half sinusoidal waves. t P = 10 ms.Fig. 18W off = f(V 0,di/dt), T j = 125°C.
Rectangular waves.。