2SK3271-01中文资料

Drain-Source Breakdown-Voltage
BV DSS
ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
பைடு நூலகம்
ID=10mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=60V
Tch=25°C
VGS=0V
Min. Typ. Max. Unit 35,0 °C/W
0,806 °C/W
元器件交易网
N-channel MOS-FET
60V 6,5mΩ ±80A 135W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
700
50
200
150
135
100
1,0
85
0,25
S pF pF pF ns ns ns ns A 1,5 V ns µC
- Thermal Characteristics Item Thermal Resistance
Symbol R th(ch-a) R th(ch-c)
Test conditions channel to ambient channel to case
155
W
150
°C
-55 ~ +150
°C
* L=0,65.4uH, VCC=24V
> Equivalent Circuit
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
IF=f(VSD); 80µs pulse test; Tch=25°C
↑ 8
↑↑ 9
VGS [V] IF [A]
VDS [V]
C [F]
→ VDS [V]
Maximum Avalanche Energy vs. starting Tch
EAV=f(starting Tch): VCC=24V; IAV ≤ 80A
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V
VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=40A
VGS=40V
Min. Typ. Max. Unit
60
V
2,5
3,0
3,5 V
1,0 100,0 µA
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
→ VGS [V]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
↑ 4
↑ 5
↑ 6
VGS(th) [V]
gfs [S]
RDS(ON) [mΩ]
V DS ID I D(puls) VGS
60
V
±100
A
±400
A
+30 /-20
V
Maximum Avalanche Energy
E AV
Max. Power Dissipation
PD
Operating and Storage Temperature Range
T ch
T stg
490.4
mJ*
10,0 500,0 µA
10 100 nA
5,0
6,5 mΩ
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr)
↑
1
↑ 2
↑ 3
ID [A]
RDS(ON) [mΩ]
ID [A]
→ VDS [V]
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test; TC=25°C
→ Tch [°C]
Typical Forward Transconductance vs. ID
N-channel MOS-FET
60V 6,5mΩ ±100A 155W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
2SK3271-01
Trench Gate MOSFET
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=25A; VGS=10V
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
Turn-Off-Time toff (ton=td(off)+tf)
Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge
g fs C iss C oss C rss t d(on) tr t d(off) tf I AV V SD t rr Q rr
元器件交易网
> Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK3271-01
Trench Gate MOSFET
↑
10
↑
→ Qg [nC]
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
↑
12
Zth(ch-c) [K/W]
→ VSD [V]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
ID [A]
EAV [mJ]
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage
ID=40A
VDS=10V VDS=25V VGS=0V
f=1MHz
VCC=30V
VGS=10V
ID=80A
RGS=10 Ω L = 100µH Tch=25°C
IF=80A VGS=0V Tch=25°C IF=50A VGS=0V
-dIF/dt=100A/µs Tch=25°C
25
50
9000
1250
→ starting Tch [°C]
→ VDS [V]
This specification is subject to change without notice!
t [s] →
→ ID [A]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
↑ 7
→ ID [A]
Typical Gate Charge Characteristic
VGS=f(Qg); ID=80A; Tch=25°C
→ Tch [°C]
Forward Characteristics of Reverse Diode