IRIS-G6351S中文资料
合集下载
相关主题
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 3 due to patterning, the maximum switching current decreases as shown by V2-3 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current.
MAX 19.4 11.1
5 50 18 0.82 0.9 27.8 70 10.5 -
Uni ts V V mA µA
µsec V mA V µA V
℃
Test Conditions
ViΒιβλιοθήκη Baidu=0→19.4V
Vin=19.4→9.1V
-
Vin=15V
-
Vin=0→27.8V
Vin=27.8→(Vin(OFF)-0.3)V Vin=27.8→7.9V
Symbol
Definition
IDpeak Drain Current
*1
IDMAX Maximum switching current *5
Terminals Max. Ratings Units
1-2
2.7
A
1-2
2.7
A
Note Single Pulse V2-3=0.82V Ta=-20~+125℃
-
Between channel and internal frame
www.irf.com
元器件交易网www.cecb2b.com
A.S.O. temperature derating coefficient[%]
IRIS-G6351S
IRIS-G6351S A.S.O. temperature derating coefficient curve 100
元器件交易网www.cecb2b.com
IRIS-G6351S
Absolute Maximum Ratings (Ta=25ºC)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Fig.1
V2-3
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
-
*6 The relation of VIN(OFF) >VIN(La.OFF) is applied for each product *7 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
• Low start-up circuit current (50uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light load
• Avalanche energy guaranteed MOSFET with high VDSS
Tstg Storage temperature
-
-40 ~ +125 ℃
Tch Channel temperature
-
150
℃
*1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve
(Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time).
Typical Connection Diagram
IRIS-G6300
OCP/FB Vin GND S D
www.irf.com
-
-
-
-
θch-F Thermal resistance
-
-
MAX -
300 3.95 250 2.4
Uni ts V µA Ω
nsec ℃/W
Test Conditions
ID=300µA V3- 2=0V(short)
VDS =650V V3-2=0V(s h o rt)
V3-2=10V ID=0.6A
IRIS-G6351S is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs.
4-3
0.14
W
Vin×Iin
Internal frame temperature
Refer to recommended
TF in operation
-
-20 ~ +125 ℃ operating temperature
Top Operating ambient temperature
-
-20 ~ +125 ℃
80
60
40
20
0 0 20 40 60 80 100 120 Internal frame temperature TF [℃]
Maximum Switchng Current I DMAX [A]
• Pulse-by-pulse Overcurrent Protection (OCP) • Overvoltage Protection with latch mode (OVP) • Thermal Shutdown with latch mode (TSD)
TO-220 Fullpack (5 Lead)
INTEGRATED SWITCHER
Package Outline
• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
Symbol
Defi ni ti on
Vin(ON) Operation start voltage
Vin(OFF) Operation stop voltage *6
Iin(ON) Circuit current in operation
Iin(OFF) Circuit current in non-operation
Single Pulse
VDD=99V, L=20mH
EAS Single pulse avalanche energy *2
1-2
92
mJ
IL peak=2.7A
Vin Input voltage for control part
4-3
35
V
Vth O.C.P/F.B Pin voltage
5-3
元器件交易网www.cecb2b.com
Data Sheet No. PD 96945A
IRIS-G6351S
Features
• Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology.
• The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit • Various kinds of protection functions
(Ta=25℃) unless otherwise specified
Symbol
Defi ni ti on
MIN
Rati ngs TYP
VDSS Drain-to-Source breakdown voltage
650
-
IDSS Drain leakage current
-
-
RDS(ON) On-resistance tf Switching time
Vin(La.OFF) Latch circuit release voltage *6,7
Tj(TSD) Thermal shutdown operating temperature
MIN 15.8 9.1
12 0.7 0.7 23.2 7.9 135
Rati ngs TYP 17.6 10.1 15 0.76 0.8 25.5 -
Key Specifications
Type
MOSFET VDSS(V)
RDS(ON) MAX
IRIS-G6351S
650
3.95Ω
AC input(V) 230±15% 85 to 264
Pout(W) Note 1
65
30
Descriptions
Note 1: The Pout (W) represents the thermal rating at PRC Operation, and the peak power output is obtained by approximately 120 to 140% of the above listed. When the output voltage is low and ON-duty is narrow, the Pout (W) shall become lower than that of above.
www.irf.com
元器件交易网www.cecb2b.com
IRIS-G6351S
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified)
6
V
24
W With infintite heatsink
PD1 Power dissipation for MOSFET *3
1-2
1.5
W Without heatsink
Power dissipation for control part
Specified by
PD2
(Control IC) *4
TOFF(MAX) Maximum OFF time
Vth O.C.P/F.B Pin threshold voltage
IOCP/FB O.C.P/F.B Pin extraction current
Vin(OVP) O.V.P operation voltage
Iin(H)
Latch circuit sustaining current *7
Pin 3 due to patterning, the maximum switching current decreases as shown by V2-3 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current.
MAX 19.4 11.1
5 50 18 0.82 0.9 27.8 70 10.5 -
Uni ts V V mA µA
µsec V mA V µA V
℃
Test Conditions
ViΒιβλιοθήκη Baidu=0→19.4V
Vin=19.4→9.1V
-
Vin=15V
-
Vin=0→27.8V
Vin=27.8→(Vin(OFF)-0.3)V Vin=27.8→7.9V
Symbol
Definition
IDpeak Drain Current
*1
IDMAX Maximum switching current *5
Terminals Max. Ratings Units
1-2
2.7
A
1-2
2.7
A
Note Single Pulse V2-3=0.82V Ta=-20~+125℃
-
Between channel and internal frame
www.irf.com
元器件交易网www.cecb2b.com
A.S.O. temperature derating coefficient[%]
IRIS-G6351S
IRIS-G6351S A.S.O. temperature derating coefficient curve 100
元器件交易网www.cecb2b.com
IRIS-G6351S
Absolute Maximum Ratings (Ta=25ºC)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Fig.1
V2-3
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
-
*6 The relation of VIN(OFF) >VIN(La.OFF) is applied for each product *7 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
• Low start-up circuit current (50uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light load
• Avalanche energy guaranteed MOSFET with high VDSS
Tstg Storage temperature
-
-40 ~ +125 ℃
Tch Channel temperature
-
150
℃
*1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve
(Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time).
Typical Connection Diagram
IRIS-G6300
OCP/FB Vin GND S D
www.irf.com
-
-
-
-
θch-F Thermal resistance
-
-
MAX -
300 3.95 250 2.4
Uni ts V µA Ω
nsec ℃/W
Test Conditions
ID=300µA V3- 2=0V(short)
VDS =650V V3-2=0V(s h o rt)
V3-2=10V ID=0.6A
IRIS-G6351S is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs.
4-3
0.14
W
Vin×Iin
Internal frame temperature
Refer to recommended
TF in operation
-
-20 ~ +125 ℃ operating temperature
Top Operating ambient temperature
-
-20 ~ +125 ℃
80
60
40
20
0 0 20 40 60 80 100 120 Internal frame temperature TF [℃]
Maximum Switchng Current I DMAX [A]
• Pulse-by-pulse Overcurrent Protection (OCP) • Overvoltage Protection with latch mode (OVP) • Thermal Shutdown with latch mode (TSD)
TO-220 Fullpack (5 Lead)
INTEGRATED SWITCHER
Package Outline
• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
Symbol
Defi ni ti on
Vin(ON) Operation start voltage
Vin(OFF) Operation stop voltage *6
Iin(ON) Circuit current in operation
Iin(OFF) Circuit current in non-operation
Single Pulse
VDD=99V, L=20mH
EAS Single pulse avalanche energy *2
1-2
92
mJ
IL peak=2.7A
Vin Input voltage for control part
4-3
35
V
Vth O.C.P/F.B Pin voltage
5-3
元器件交易网www.cecb2b.com
Data Sheet No. PD 96945A
IRIS-G6351S
Features
• Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology.
• The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit • Various kinds of protection functions
(Ta=25℃) unless otherwise specified
Symbol
Defi ni ti on
MIN
Rati ngs TYP
VDSS Drain-to-Source breakdown voltage
650
-
IDSS Drain leakage current
-
-
RDS(ON) On-resistance tf Switching time
Vin(La.OFF) Latch circuit release voltage *6,7
Tj(TSD) Thermal shutdown operating temperature
MIN 15.8 9.1
12 0.7 0.7 23.2 7.9 135
Rati ngs TYP 17.6 10.1 15 0.76 0.8 25.5 -
Key Specifications
Type
MOSFET VDSS(V)
RDS(ON) MAX
IRIS-G6351S
650
3.95Ω
AC input(V) 230±15% 85 to 264
Pout(W) Note 1
65
30
Descriptions
Note 1: The Pout (W) represents the thermal rating at PRC Operation, and the peak power output is obtained by approximately 120 to 140% of the above listed. When the output voltage is low and ON-duty is narrow, the Pout (W) shall become lower than that of above.
www.irf.com
元器件交易网www.cecb2b.com
IRIS-G6351S
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified)
6
V
24
W With infintite heatsink
PD1 Power dissipation for MOSFET *3
1-2
1.5
W Without heatsink
Power dissipation for control part
Specified by
PD2
(Control IC) *4
TOFF(MAX) Maximum OFF time
Vth O.C.P/F.B Pin threshold voltage
IOCP/FB O.C.P/F.B Pin extraction current
Vin(OVP) O.V.P operation voltage
Iin(H)
Latch circuit sustaining current *7