MBRS2560CT中文资料

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MBR20H150CT中文资料

Features• Plastic package has Underwriters Laboratory Flammability Classification 94V-0• Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conductionPlated leads, solderable per As marked Mounting Position: Any 10 in-lbs maximum MBR20H150CT , MBRF20H150CT & MBRB20H150CT-1 SeriesVishay Semiconductorsformerly General SemiconductorDocument Number New ProductReverse Voltage 150V Forward Current 20AMax. Junction Temperature 175°CPIN 1PIN 3TO-220AB (MBR20H150CT)TO-262AA (MBRB20H150CT-1)Maximum Ratings (TC= 25°C unless otherwise noted)ParameterSymbol MBR20H150CTUnit Maximum repetitive peak reverse voltage V RRM 150V Working peak reverse voltage V RWM 150V Maximum DC blocking voltageV DC150V Maximum average forward rectified current Total device20Per legI F(AV)10A Peak forward surge current8.3ms single half sine-wave superimposed I FSM 200A on rated load (JEDEC Method) per legPeak repetitive reverse current per leg at t p = 2µs, 1KH Z I RRM 1.0A Peak non-repetitive reverse surge energy per leg E RSM 10mJ (8/20µs waveform)Non-repetitive avalanche energy per leg at 25°C, I AS = 1.5A, L=10mH E AS 11.25mJ Voltage rate of change (rated V R )dv/dt 10,000V/µs Operating junction and storage temperature range T J , T STG –65 to +175°C RMS Isolation voltage (MBRF type only) from terminals 4500(1)to heatsink with t = 1 second, RH ≤30%V ISOL3500(2)V1500 (3)Electrical Characteristics (TC= 25°C unless otherwise noted)ParameterSymbolValue UnitMaximum instantaneous I F = 10A,T C = 25°C 0.90forward voltage per leg at (4):I F = 10A,T C = 125°C 0.75I F = 20A,T C = 25°C V F 0.99V I F = 20A,T C = 125°C 0.86Maximum reverse current per leg T J = 25°C 5.0µA at working peak reverse voltageT J = 125°CI R1.0mAThermal Characteristics (TC= 25°C unless otherwise noted)ParameterSymbol MBR MBRF MBRB Unit Typical thermal resistance per legR ΘJC2.24.22.2°C/WNotes:(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)(4) Pulse test: 300µs pulse width, 1% duty cycleMBR20H150CT , MBRF20H150CT & MBRB20H150CT-1 SeriesVishay Semiconductorsformerly General Semiconductor Document Number 88864MBR20H150CT , MBRF20H150CT & MBRB20H150CT-1 SeriesVishay Semiconductorsformerly General SemiconductorDocument Number 0.10.30.20.40.60.8 1.00.50.70.9 1.1 1.2100100.110.10.011101001,00010,0000.01110010101000.10.11Fig. 3 – Typical Instantaneous Forward Characteristics Per LegI R -- I n s t a n t a n e o u s R e v e r s e C u r r e n t (µA )J u n c t i o n C a p a c i t a n c e (p F )1101001001000100000.110Reverse Voltage (V)102030507010040608090Fig. 4 – Typical Reverse Characteristics Per LegFig. 6 – Typical Transient Thermal Impedance Per Legt -- Pulse Duration (sec.)Instantaneous Forward Voltage (V)Percent of Rated Peak Reverse Voltage (%)I F -- I n s t a n t a n e o u s F o r w a r d C u r r e n t (A )T r a n s i e n t T h e r m a l I m p e d a n c e (°C /W )51015202530255075100125150175A v e r a g e F o r w a r d C u r r e n t (A )Case T emperature (°C)020406080100120140160180200220240200110100P e a k F o r w a r d S u r g e C u r r e n t (A )Number of Cycles at 60 H ZFig. 5 – Typical Junction CapacitancePer LegFig. 1 – Forward Derating Curve(Total)Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Per LegRatings andCharacteristic Curves (T A = 25°C unless otherwise noted)This datasheet has been download from: Datasheets for electronics components.。

MBRS10100CT资料

100
0.70 0.57 0.80 0.65 0.1 6.0 2.0 -65 to +150 -65 to +175 0.85 0.75 0.95 0.85
V mA mA ℃/W ℃ ℃
TSTG
TJ
3. Thermal Resistance from Junction to Case Per Leg.
04.25.2005/rev. a
元器件交易网
RATINGS AND CHARACTERISTIC CURVES (MBRS1035CT THRU MBRS10100CT)
FIG.1- FORWARD CURRENT DERATING CURVE
5.0
180
FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260oC/10 seconds,0.25”(6.35mm)from case

MBR256中文资料

400
8.3ms Single Half Sine-Wave (JEDEC Mathod)
20
300
15
200
10
100
5
Single Phase Half Wave 60Hz Inductive or Resistive Load
0
1
2
5
10
20
50
100
0
50
100
150
NUMBER OF CYCLES AT 60Hz
2
600 420 600
800 560 800
1000 700 1000
Volts Volts Volts Amps Amps Volts µAmps A 2 Sec pF C/W
0
@T A = 25 oC @T A = 100 oC
C
元器件交易网
RATING AND CHARACTERISTIC CURVES (MBR2505 THRU MBR2510)
VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 25 Amperes
FEATURES
* Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * Low forward voltage drop * High Reliability
元器件交易网
DC COMPONENTS CO., LTD.
R
RECTIFIER SPECIALISTS

MBR2060CT中文资料

S VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Per Diode
Figure 2. Typical Reverse Current Per Diode
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
10 20 150
Amps Amps Amps
IRRM TJ Tstg dv/dt
*65 to +150 *65 to +175
10,000 2.0 60
0.5
Amp °C °C V/µs
THERMAL CHARACTERISTICS
Maximum Thermal Resistance — Junction to Case — Junction to Ambient RθJC RθJA °C/W
dc
140
150
160
TC, CASE TEMPERATURE (°C)
Figure 3. Current Derating, Case
Figure 4. Current Derating, Ambient
20 18 AVERAGE POWER (WATTS) 16 14 12 10 8.0 6.0 4.0 2.0 0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 AVERAGE CURRENT (AMPS) IPK/IAV = 20 SQUARE WAVE IPK/IAV = 10 dc TA = 25°C IPK/IAV = 5.0 IPK/IAV = p
元器件交易网
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

MBR20H100CT中文资料

MBR20H100CT , MBRF20H100CT & MBRB20H100CT SeriesVishay Semiconductorsformerly General SemiconductorDocument Number New ProductCase:JEDEC TO-220AB, ITO-220AB, TO-263AB & TO-262AA molded plastic bodyTerminals:Plated leads, solderable per MIL-STD-750, Method 2026High temperature soldering guaranteed:250°C/10 seconds, 0.25" (6.35mm) from case (TO-220AB,ITO-220AB & TO-252AA) at terminals (TO-236AB)Polarity:As marked Mounting Position: Any Mounting Torque:10 in-lbs maximum Weight:0.08 oz., 2.24 g• Plastic package has Underwriters Laboratory Flammability Classification 94V-0• Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency• Guardring for overvoltage protection• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applicationsMBR20H100CT , MBRF20H100CT & MBRB20H100CT SeriesVishay Semiconductorsformerly General Semiconductor Document Number 88673Maximum Ratings (TC= 25°C unless otherwise noted)ParameterSymbol MBR20H90CTMBR20H100CTUnit Maximum repetitive peak reverse voltage V RRM 90100V Working peak reverse voltage V RWM 90100V Maximum DC blocking voltageV DC90100V Maximum average forward rectified current Total device20Per legI F(AV)10A Peak forward surge current8.3ms single half sine-wave superimposed I FSM 250A on rated load (JEDEC Method) per legPeak repetitive reverse current per leg at t p = 2µs, 1KH Z I RRM 1.0A Voltage rate of change (rated V R )dv/dt 10,000V/µs Operating junction and storage temperature range T J , T STG –65 to +175°C RMS Isolation voltage (MBRF type only) from terminals 4500(1)to heatsink with t = 1 second, RH ≤30%V ISOL3500(2)V1500 (3)Electrical Characteristics (TC= 25°C unless otherwise noted)ParameterSymbolValue UnitMaximum instantaneous I F = 10A,T C = 25°C 0.77forward voltage per leg at (4):I F = 10A,T C = 125°C 0.64I F = 20A,T C = 25°C V F 0.88V I F = 20A,T C = 125°C 0.73Maximum reverse current per leg T J = 25°C 4.5µA at working peak reverse voltageT J = 125°CI R6.0mAThermal Characteristics (TC= 25°C unless otherwise noted)ParameterSymbol MBR MBRF MBRB Unit Typical thermal resistance per legR ΘJC2.05.82.0°C/WNotes:(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)(4) Pulse test: 300µs pulse width, 1% duty cycleOrdering InformationProductCase Package CodePackage OptionMBR20H90CT - MBR20H100CT TO-220AB 45Anti-Static tube, 50/tube, 2K/carton MBRF20H90CT - MBRF20H100CT ITO-220AB 45Anti-Static tube, 50/tube, 2K/carton 3113” reel, 800/reel, 4.8K/cartonMBRB20H90CT - MBRB20H100CTTO-263AB45Anti-Static tube, 50/tube, 2K/carton81Anti-Static 13” reel, 800/reel, 4.8K/cartonMBR20H100CT , MBRF20H100CT & MBRB20H100CT SeriesVishay Semiconductorsformerly General SemiconductorDocument Number Ratings andCharacteristic Curves per leg (TA= 25°C unless otherwise noted)481220160.11101001000Fig. 1 — Forward Current Derating CurveFig. 2 — Maximum Non-Repetitive PeakForward Surge Current Per Leg0.010.1110。

MBRF2560CT中文资料

2/18/99
元器件交易网
RATINGS AND CHARACTERISTIC CURVES MBRF2535CT THRU MBRF2560CT
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PER LEG PEAK FORWARD SURGE CURRENT, AMPERES
1
TJ=75¡C
0.1
MBRF2535CT - MBRF2545CT MBRF2550C & MBRF2560CT
0.1
0.01
TJ=25¡C
MBRF2535CT - MBRF2545CT MBRF2550C & MBRF2560CT
0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG
5,000
JUNCTION CAPACITANCE, pF
100
TJ=25¡C f=1.0 MHz Vsig=50mVp-p
1,000
10
1
MBRF2535CT - MBRF2545CT MBRF2550C & MBRF2560CT
Amps
VF
Volts
IR RQJC dv/dt TJ TSTG VISOL
mA ¡C/W V/ms ¡C ¡C Volts
-65 to +150 -65 to +175 4500 (NOTE 4) 3500 (NOTE 5) 1500 (NOTE 6)
NOTES: (1) 2.0ms pulse width, f=1.0 KHZ (2) Pulse test: 300ms pulse width, 1% duty cycle (3) Thermal resistance from junction to case per leg (4) Clip mounting (on case), where lead does not overlap heatsink with 0.110Ó offset. (5) Clip mounting (on case), where leads do overlap heatsink. (6) Screw mounting with 4-40 screw, where washer diameter is £ 4.9 mm (0.19Ó).

MBRB20200CT中文资料

ELECTRICAL CHARACTERISTICS (PER LEG)
Maximum Instantaneous Forward Voltage (1) 0.9 0.8 1.0 0.9 1.0 50 Volts
Maximum Instantaneous Reverse Current (1) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 125°C)
Amps Amps Amps Amp °C °C V/µs °C/W
THERMAL CHARACTERISTICS (PER LEG)
Thermal Resistance — Junction to Case RθJC (IF = 10 Amps, TC = 25°C) (IF = 10 Amps, TC = 125°C) (IF = 20 Amps, TC = 25°C) (IF = 20 Amps, TC = 125°C) VF 2.0
150
160
Figure 3. Forward Power Dissipation
IF(AV), AVERAGE FORWARD CURRENT (AMPS) 20 500
Figure 4. Current Derating, Case
RθJA = 16°C/W RATED VOLTAGE C, CAPACITANCE (pF)
Figure 2. Typical Reverse Current (Per Leg)
SQUARE WAVE
RATED VOLTAGE RθJC = 2°C/W
20
15 SQUARE WAVE 10 dc
5
0
90

MBR2560CT中文资料

MBR2535CT - MBR2560CTMBR2535CT - MBR2560CT, Rev. A©1999 Fairchild Semiconductor CorporationMBR2535CT - MBR2560CT, Rev. ATRADEMARKSACEx™CoolFET™CROSSVOLT™E 2CMOS TM FACT™FACT Quiet Series™FAST ®FASTr™GTO™HiSeC™The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.As used herein:ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status Definition Advance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.。

MBR60H100CTG;MBRB60H100CTT4G;MBR60H100CT;中文规格书,Datasheet资料

MBRB60H100CTT4G D2PAK
800/
(Pb−Free) Tape & Reel
NRVBB60H100CTT4G D2PAK
800/
(Pb−Free) Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TJ = 125°C) (Rated DC Voltage, TJ = 25°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Figure 1. Typical Forward Voltage
175°C 10
TJ = 150°C 1.0
125°C 25°C
0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
Applications
• Power Supply − Output Rectification • Power Management • Instrumentation

MBRP20045CT中文资料

Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 140°C Peak Repetitive Forward Current, Per Leg (Rated VR, Square Wave, 20 kHz), TC = 140°C Non–Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Current, Per Leg (2.0 µs, 1.0 kHz) See Figure 6. Operating Junction Temperature Storage Temperature Voltage Rate of Change (Rated VR) Per Device Per Leg Symbol VRRM VRWM VR IF(AV) IFRM IFSM IRRM TJ Tstg dv/dt
Unit Volts
200 100 200 1500 2.0
200 100 200 1500 2.0
Amps Amps Amps Amps °C °C V/µs
*55 to +175 *55 to +150
10000 0.6
*55 to +175 *55 to +150
10000 0.6
THERMAL CHARACTERISTICS PER LEG

MAX2560中文资料

General DescriptionThe MAX2560/MAX2566/MAX2572 evaluation kits (EV kits) simplify testing of the MAX2560/MAX2566/MAX2572. The EV kits provide 50ΩSMA connectors for all RF inputs, baseband inputs, and RF outputs. On-board VCOs are provided for the on-chip PLLs.The EV kits allow evaluation of the MAX2560/MAX2566/MAX2572s’ I/Q modulator, RF upconverter, IF and RF VGAs, IF and RF PLLs, 3-wire programmable interface,and power-management features.The MAX2560/MAX2566/MAX2572 support CDMA,TDMA, and EDGE modes for US PCS and cellular bands, as well as W-CDMA mode for UMTS band. The MAX2566/MAX2572 also support GSM-GPRS mode for all four bands.Features♦On-Board PCS and Cellular VCOs♦WCDMA, GSM900, DCS1800, GSM1900 Modes (MAX2566/MAX2572 EV Kits)♦50ΩSMA Connectors on All RF and Baseband Ports♦Low-Power Shutdown Mode♦EV-Kit Control Software Available at ♦SPI TM /QSPI TM /MICROWIRE TM CompatibleEvaluate: MAX2560/MAX2566/MAX2572MAX2560/MAX2566/MAX2572 Evaluation Kits________________________________________________________________Maxim Integrated Products 1MAX2560 Component ListOrdering Information19-3368; Rev 0; 7/04For pricing, delivery, and ordering information,please contact Maxim/Dallas Direct!at 1-888-629-4642, or visit Maxim’s website at .Component SuppliersSPI and QSPI are trademarks of Motorola, Inc.Microwire is a trademark of National Semiconductor Corp.E v a l u a t e : M A X 2560/M A X 2566/M A X 2572MAX2560/MAX2566/MAX2572 Evaluation Kits 2_______________________________________________________________________________________MAX2560 Component List (continued)Evaluate: MAX2560/MAX2566/MAX2572MAX2560/MAX2566/MAX2572 Evaluation Kits_______________________________________________________________________________________3MAX2560 Component List (continued)E v a l u a t e : M A X 2560/M A X 2566/M A X 2572MAX2560/MAX2566/MAX2572 Evaluation Kits 4_______________________________________________________________________________________Evaluate: MAX2560/MAX2566/MAX2572MAX2560/MAX2566/MAX2572 Evaluation Kits_______________________________________________________________________________________5MAX2566 Component List (continued)E v a l u a t e : M A X 2560/M A X 2566/M A X 2572MAX2560/MAX2566/MAX2572 Evaluation Kits 6_______________________________________________________________________________________MAX2566 Component List (continued)Evaluate: MAX2560/MAX2566/MAX2572MAX2560/MAX2566/MAX2572 Evaluation Kits_______________________________________________________________________________________7E v a l u a t e : M A X 2560/M A X 2566/M A X 2572MAX2560/MAX2566/MAX2572 Evaluation Kits 8_______________________________________________________________________________________Quick Start The MAX2560/MAX2566/MAX2572 EV kits are fully assembled and factory tested. Follow the instructions in the Connections and Setup section.Test Equipment Required This section lists the recommended test equipment to verify the operation of the MAX2560/MAX2566/ MAX2572. It is intended as a guide only, and substitu-tions may be possible.•One RF signal generator capable of delivering -5dBm of output power in the 1GHz to 3GHz frequency range (HP8648 or equivalent) for the external RF LO •An RF spectrum analyzer with optional digital modu-lation personality (Rohde & Schwarz FSEA30 or equivalent)• A power supply capable of providing 200mA at +5V • A power supply capable of providing 50mA at 6.8V • A power supply capable of providing -50mA at -3.2V •I/Q arbitrary waveform generator (Agilent E4433B or equivalent)•PC (486DX33 or better) with Windows TM95/98, 2000, NT 4.0 or later operating system and an available parallel port•INTF2300 interface board (supplied with EV kit)Connections and Setup This section provides step-by-step instructions for get-ting the EV kit up and running in CDMA, WCDMA, and GSM modes.1)Verify shunts JU6–JU22 and JU28–JU31 are in place.2)Connect the INTF2300 interface cable to the EV kit.Note:Pin 1 of the interface cable corresponds to the red wire. Pin 1 is designated in silkscreen on each of the PC boards.3)With the power supply turned off, connect a +5.0Vpower supply to the header labeled V5.0 (J31).Connect the power-supply ground to the header labeled GND (J5). (The MAX2560 requires two additional power supplies. Connect the +6.8V power supply to JU28, and connect the -3.2V to TP2. Connect the grounds to GND (J5) or GND (J20), or both.)4)Install and run the MAX2560/MAX2572 control soft-ware. The MAX2566 has its own control software.Software is available for download on the Maxim website at .5)With MAX2560/MAX2566/MAX2572 control softwareactive in the REG screen, set the SHDN box to 0 toplace the IC in shutdown mode.6)Turn on the power supplies.Cellular CDMA Mode Perform the following steps to evaluate the MAX2560 inthe cellular CDMA mode:1)Verify shunt JU24 is in the LOTDMA position.2)With MAX2560/MAX2566/MAX2572 control softwareactive in the REG screen, use Table 1 to set the oper-ating mode to cellular CDMA. Also, change the refer-ence frequency to 19.2MHz in the control software.3)Connect the I and Q outputs of the arbitrary wave-form generator to the I (J15) and Q (J16) ports. Setthe generator to reverse-channel CDMA settings.Set the output voltage level to 400mV PK.4)Connect RFL (J9) to the spectrum analyzer.Configure the spectrum analyzer to measure ACPRfor the reverse-channel CDMA. Set the center fre-quency to 836MHz with 50MHz span and a+10dBm reference level.5)Adjust the R6 (VGCIF) to obtain an output power of+8dBm after accounting for cable and connectorloss. The ACPR in 30kHz bandwidth at ±885kHzoffset should be -54dBc, and the ACPR in 30kHzbandwidth at ±1.98MHz offset should be -65dBc.PCS CDMA Mode Perform the following steps to evaluate the MAX2560 inthe PCS CDMA mode:1)Verify shunt JU24 is in the LOTDMA position.2)With MAX2560/MAX2566/MAX2572 control softwareactive in the REG screen, use Table 1 to set theoperating mode to PCS CDMA. Also, change the ref-erence frequency to 19.2MHz in the control software.3)Connect the I and Q outputs of the arbitrary wave-form generator to the I (J15) and Q (J16) ports. Setthe generator to reverse-channel CDMA settings.Set the output voltage level to 400mV PK.4)Connect RFH0 (J1) to the spectrum analyzer.Configure the spectrum analyzer to measure ACPRfor the reverse-channel CDMA. Set the center fre-quency to 1880MHz with 50MHz span and a+10dBm reference level.5)Adjust the R6 (VGCIF) to obtain an output power of+8dBm after accounting for cable and connectorloss. The ACPR in 30kHz bandwidth at ±1.25MHzoffset should be -54dBc, and the ACPR in 30kHzbandwidth at ±1.98MHz offset should be -65dBc. Evaluate: MAX2560/MAX2566/MAX2572MAX2560/MAX2566/MAX2572 Evaluation Kits _______________________________________________________________________________________9 Windows is a trademark of Microsoft.E v a l u a t e : M A X 2560/M A X 2566/M A X 2572WCDMA ModePerform the following steps to evaluate the MAX2566/MAX2572 in the WCDMA mode:1)Verify shunt JU24 is in the LOUMTS position.2)With MAX2560/MAX2566/MAX2572 control softwareactive in the REG screen, use Tables 2 and 3 to set the operating mode to WCDMA.3)Connect the I and Q outputs of the arbitrary wave-form generator to the I (J15) and Q (J16) ports. Set the generator to WCDMA settings. Verify 300mV peak baseband signal on Q+/Q- (JU2) and I+/I-(JU1), or 600mV peak-to-peak differential.4)The MAX2566 EV kit requires an external LO input.Apply an external LO 1565MHz at -10dBm to the LOH port.5)Connect RFH0 (J1) to the spectrum analyzer.Configure the spectrum analyzer to measure ACPR for the uplink WCDMA. Set the center frequency to 1950MHz with 50MHz span and a +10dBm refer-ence level.6)Adjust the R1 (VGCRF) and R6 (VGCIF) (only adjustVGCIF if VGS = 1) to obtain an output power of +8dBm after accounting for cable and connector loss.The ACPR in 3.84MHz bandwidth at ±5MHz offset should be -49dBc, and the ACPR in 3.84MHz band-width at ±10MHz offset should be -62dBc. Note that C112–C115 are disconnected for this measurement.GSM 900 ModePerform the following steps to evaluate the MAX2566/MAX2572 in the GSM 900 mode:1)Verify shunts JU23–JU26 and JU33 positions withTable 4.2)With MAX2560/MAX2566/MAX2572 control softwareactive in the REG screen, use Tables 2 and 3 to set the operating mode to GSM 900 mode.3)Connect the I and Q outputs of the arbitrary wave-form generator to the I (J15) and Q (J16) ports. Set the generator to GSM settings. Verify 300mV peak baseband signal on Q+/Q- (JU2) and I+/I- (JU1), or 600mV peak-to-peak differential.4)The MAX2566 EV kit requires an external LO input.Apply an external LO 1190MHz at -10dBm to the LOH port.5)Connect GSM (J3) to the spectrum analyzer.Configure the spectrum analyzer to measure spec-tral mask for the GSM signal. Set the center fre-quency to 900MHz with 50MHz span and a +10dBm reference level.MAX2560/MAX2566/MAX2572 Evaluation KitsDCS 1800 Mode Perform the following steps to evaluate the MAX2566/MAX2572 in the DCS 1800 mode:1)Verify shunts JU23–JU26 and JU33 positions withTable 4.2)With MAX2560/MAX2566/MAX2572 control softwareactive in the REG screen, use Tables 2 and 3 to set the operating mode to DCS 1800 mode.3)Connect the I and Q outputs of the arbitrary wave-form generator to the I (J15) and Q (J16) ports. Set the generator to GSM settings. Verify 300mV peak baseband signal on Q+/Q- (JU2) and I+/I- (JU1), or 600mV peak-to-peak differential.4)The MAX2566 EV kit requires an external LO input.Apply an external LO 1510MHz at -10dBm to the LOH port.5)Connect GSM (J33) to the spectrum analyzer.Configure the spectrum analyzer to measure spec-tral mask for the GSM signal. Set the center fre-quency to 1800MHz with 50MHz span and a +10dBm reference level.GSM 1900 Mode Perform the following steps to evaluate the MAX2566/MAX2572 in the GSM 1900 mode:1)Verify shunts JU23–JU26 and JU33 positions withTable 4.2)With MAX2560/MAX2566/MAX2572 control softwareactive in the REG screen, use Tables 2 and 3 to set the operating mode to GSM 1900 mode.3)Connect the I and Q outputs of the arbitrary wave-form generator to the I (J15) and Q (J16) ports. Setthe generator to GSM settings. Verify 300mV peakbaseband signal on Q+/Q- (JU2) and I+/I- (JU1), or600mV peak-to-peak differential.4)The MAX2566 EV kit requires an external LO input.Apply an external LO 1610MHz at -10dBm to theLOH port.5)Connect GSM (J33) to the spectrum analyzer.Configure the spectrum analyzer to measure spec-tral mask for the GSM signal. Set the center fre-quency to 1900MHz with a +10dBm reference level.Layout ConsiderationsThe MAX2560/MAX2566/MAX2572 EV kits can serve as guides for board layout. Keep PC board trace lengthsas short as possible to minimize parasitics. Also, keep decoupling capacitors as close to the IC as possiblewith a direct connection to the ground plane.INTF2300 SPI Interface BoardThe INTF2300 interface board is used to interface 3-wire SPI protocol from a PC’s parallel port to the EV kit.This board level translates 5V logic from the PC to VCCof the EV kit (typically, this is 2.85V logic). The INTF2300also provides buffering and EMI filtering. Its absolute maximum supply voltage is 4.6V, limited by the break-down of the buffer IC. The recommended operating supply voltage range is +2.7V to +3.6V.Evaluate: MAX2560/MAX2566/MAX2572MAX2560/MAX2566/MAX2572 Evaluation KitsE v a l u a t e : M A X 2560/M A X 2566/M A X 2572MAX2560/MAX2566/MAX2572 Evaluation KitsFigure 1. MAX2560 EV Kit Schematic (Sheet 1 of 3)MAX2560/MAX2566/MAX2572 Evaluation KitsEvaluate: MAX2560/MAX2566/MAX2572Figure 1. MAX2560 EV Kit Schematic (Sheet 2 of 3)E v a l u a t e : M A X 2560/M A X 2566/M A X 2572MAX2560/MAX2566/MAX2572 Evaluation KitsFigure 1. MAX2560 EV Kit Schematic (Sheet 3 of 3)MAX2560/MAX2566/MAX2572 Evaluation KitsEvaluate: MAX2560/MAX2566/MAX2572Figure 2. MAX2566 EV Kit Schematic (Sheet 1 of 3)E v a l u a t e : M A X 2560/M A X 2566/M A X 2572MAX2560/MAX2566/MAX2572 Evaluation KitsFigure 2. MAX2566 EV Kit Schematic (Sheet 2 of 3)MAX2560/MAX2566/MAX2572 Evaluation KitsEvaluate: MAX2560/MAX2566/MAX2572Figure 2. MAX2566 EV Kit Schematic (Sheet 3 of 3)E v a l u a t e : M A X 2560/M A X 2566/M A X 2572MAX2560/MAX2566/MAX2572 Evaluation KitsFigure 3. MAX2572 EV Kit Schematic (Sheet 1 of 3)MAX2560/MAX2566/MAX2572 Evaluation KitsEvaluate: MAX2560/MAX2566/MAX2572Figure 3. MAX2572 EV Kit Schematic (Sheet 2 of 3)E v a l u a t e : M A X 2560/M A X 2566/M A X 2572MAX2560/MAX2566/MAX2572 Evaluation KitsFigure 3. MAX2572 EV Kit Schematic (Sheet 3 of 3)Evaluate: MAX2560/MAX2566/MAX2572MAX2560/MAX2566/MAX2572 Evaluation Kits ______________________________________________________________________________________21Figure 5. MAX256_/MAX257_ EV Kit Component Placement Guide—Solder SideFigure 4. MAX256_/MAX257_ EV Kit Component PlacementGuide—Component SideFigure 7. MAX256_/MAX257_ EV Kit PC Board Layout—Ground PlaneFigure 6. MAX256_/MAX257_ EV Kit PC Board Layout—Component SideE v a l u a t e : M A X 2560/M A X 2566/M A X 2572MAX2560/MAX2566/MAX2572 Evaluation Kits Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.22____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600©2004 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.Figure 8. MAX256_/MAX257_ EV Kit PC Board Layout—Inner Layer Figure 9. MAX256_/MAX257_ EV Kit PC Board Layout—SolderSide。

MBR2540CT中文资料

Instantaneous Reverse Leakage Current - MicroAmperes versus Percent Of Rated Peak Reverse Voltage - Volts
Figure 4 Peak Forward Surge Current 150
20 125 15 100 75 Amps 8 25 5 Single Phase, Half Wave 60Hz Resistive or Inductive Load 0 0 25 50 75 °C Average Forward Rectified Current - Amperes versus Ambient Temperature - °C 100 130 150 0 1 4 6 8 10 Cycles Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles 20 40 60 80 100 50
MBR2520CT THRU MBR2560CT
25 Amp
Schottky
Meatl of Silicon Rectifier, Majority Conducton Guard ring for transient protection High surge capacity High Current Capability, High Efficiency Low Power Loss
*Pulse Test: Pulse Width 300 µsec, Duty Cycle 2%
. www
元器件交易网
MBR2520CT thru MBR2560CT
Figure 1 Typical Forward Characteristics 100 60 40 20 2545CT-2560CT 10 6 4 2 25°C Amps 1 .6 .4 .2 .1 .06 .04 .02 .01 .2 .3 .4 .5 .6 .7 .8 2520CT-2540CT 10 6 4 2 1 .6 .4 .2 TJ=25°C µ Amps .1 .06 .04 .02 .01 .006 .00 4 .002 .001 20 50 75

PHILIPS BRILLIANCE ICT 介绍

部的心血管等
与64排CT相比，iCT在心脏成像中，患者检查前无需特殊准备，不需要控制心率，患者任何时候来到检查室，都可以进行检查，真正做到了即来即做。
心率的适应范围宽，最高达180次/分的心率，仍然能取得良好的图像品质。
针对不同心脏生理状态，iCT具备定制的应对策略，并且实现了不同策略的自然转换和选择，这些策略为我们提供了挑战低剂量心脏检查和高复杂心率或心律检查的技术手段。
它所采用的CT硬件平台是一个全新高级CT成像平台— “i”PlatForm平台。该平台整合了当今先进的气垫机架技术、管球技术、球面探测器技术、数据采集传输和处理系统、最新剂量管理方法和技术，系统的优化设计和综合性能达到了目前极高水平。
二、系统特点
它所采用的CT软件系统性能稳定、具有多种后处理功能，其独有的WorkSpace空间站技术可以提供多台子计算机接入并可进行后处理，优质、高效。
五、临床应用肝脏双血流灌注成像
肝脏灌注可以准确的分离动脉期和门脉期的信息，可准确进行病灶探查和定性。通过该功能可一次性获得肝动脉、门静脉及肝静脉成像，以及获得病变的对比剂动态时间密度曲线及肝脏实质灌注，同时可为手术准备肝脏分段及容积测量信息。
五、临床应用肺结节分析
通过肺结节评估软件，医生可以定量的监测肺部结节的尺寸、形状和随时间的变化。一次扫描可以报告多个结节的测量尺寸，可与先前的扫描进行随访比较。
五、临床应用高级心脏成像
五、临床应用
女性，69岁，心率85次/分，心脏CTA示： 1、前降支近段局部管腔狭窄，面积狭窄约71%； 2、主动脉弓、胸主动脉及冠脉多发钙化。
高级心脏成像软件包可提供强大的心血管检查和诊断功能，包括：

MBR60H100CT资料

Figure 1. Typical Forward Voltage
175°C 10
TJ = 150°C 1.0
125°C 25°C
0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
IF (AV), AVERAGE FORWARD CURRENT (AMPS)
26
24
22
20
18
16
14
12
10 8.0 SQUARE WAVE
6.0
4.0
2.0
0
0
25
50
dc dc
75
RATED VOLTAGE APPLIED RqJA = 16° C/W RqJA = 70° C/W (NO HEATSINK)
4
元器件交易网
MBR60H100CT
+VDD
IL
10 mH COIL
MERCURY SWITCH
VD ID
DUT S1
IL t0
BVDUT
ID
VDD
t1
t2
t
Figure 9. Test Circuit
The unclamped inductive switching circuit shown in Figure 9 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened.

MBRS1645资料

元器件交易网
MBRS1635 THRU MBRS1660
16.0 AMPS. Schottky Barrier Rectifiers
Voltage Range 35 to 60 Volts Current 16.0 Amperes
Features
Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260oC/10 seconds,0.25”(6.35mm)from case
Maximum Average Forward Rectified Current at Tc=125OC Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) at Tc=125oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage at: (Note 2) IF=16A, TC=25oC IF=16A, TC=125oC Maximum Instantaneous Reverse Current @ Tc =25℃ at Rated DC Blocking Voltage (Note 2) @ Tc=125℃

MBRS260T3G;MBRS260T3;中文规格书,Datasheet资料

Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 6
1
Publication Order Number: MBRS260T3/D
/
MBRS260T3G, NRVBS260T3G
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. Symbol RqJL RqJA Value 24 80 Unit C/W
1.0E+00
50% 20% 10% 5.0%
1.0E−01
1.0E−02 2.0%
1.0E−03 1.0%
Rtjl(t) = Rtjl*r(t)
1.0E−04
0.00001
0.0001
0.001
0.01
0.1 t, TIME (s)
1.0
10
100
1000
Figure 8. Thermal Response − Junction to Ambient
This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.