Diode laser-aided diagnostics of a low-pressure dielectric barrier

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SafeUseofLaserDevicesinHumanSubjects注意使用激光装

SafeUseofLaserDevicesinHumanSubjects注意使用激光装

before
Before
After week 1 After 7 days
2. Medical/Dental practitioners are best to detect and manage complications
Laser surgery, like other form of surgical procedure, is associated with known complications.
Mis-use of laser/IPL energy can lead to • Under-treatment (no effect) • Over-treatment (leading to complication such as pigmentary disturbance or even scarring)
2. Other western countries already have regulations to control their use.
3. Laser/IPL are “high-tech” knife. 4. Most public are not aware of the danger associated
The selectivity of IPL is decreased and much higher energy is often needed to achieve the clinical result.
Treatment of skin diseases
Congenital port-wine stain Freckle Tattoo Laser hair removal Laser resurfacing

激光损伤阈值测试

激光损伤阈值测试

激光损伤阈值测试Laser Damage Threshold TestingLaser Damage Threshold (LDT) is one of the most importantspecifications to consider when integrating an optical component intoa laser system. Using a laser in an application offers a variety ofbenefits to a standard light source, including monochromaticity,directionality, and coherence. Laser beams often contain high energies, though, and are capable of damaging sensitive optical components.When integrating a laser into an optical system, it becomes crucial tounderstand the effects of laser beams on optical surfaces and how laser damage threshold is quantified for optical components.The degree of damage induced to an optical component by a laser beam is highly dependent on the type of laser being used. Thermally-induced damage occurs under Continuous Wave (CW) laser operation. During exposure to the CW laser, the optical material may not have sufficient time to thermally relax, and failure can occur due to thermal damage to the bulk material or the optical coating. Alternatively, the damage caused by a short, intense laser pulse is due to ionization: the breakdown of the molecular bond. The electric field generated by the laser beam at the optical surface stimulates electrons at the outer energy band, causing ionization. However, it is important to keep in mind that lasers with long pulse widths (<10s) or high repetition rates(>10MHz) may also cause thermally induced damage. For these reasons, understanding laser damage threshold is crucial to designing and maintaining an optical system. -6T esting Laser Damage ThresholdLaser-induced damage threshold testing is a good method for quantifying the amount of electromagnetic radiation an optical component can withstand. There are a variety of different LDT tests. For example, Edmund Optics follows the ISO-11254 procedures and methods, which is the industry standard for determining the laser damage threshold of an optical component. Utilizing the ISO-11254 standard enables the fair comparison between optical components from different manufacturers.Edmund Optics' LDT testing is conducted by irradiating a number of test sites with a laser beam atdifferent energy densities for pulsed lasers, or different power densities for CW lasers. The energy density or power density is incrementally increased at a minimum of ten sites at each increment. The process is repeated until damage is observed in 100% of the irradiated sites. The LDT is the highest energy or power level at which no damage is observed in any of the irradiated sites. Inspection of the sites is done with a Nomarski-type Differential Interference Contrast (DIC) microscope with 100X - 150X magnification. Visible damage is observed and the results are recorded using pass/fail criteria. Figure 1 is a typical damage probability plot of exposure sites as a function of laserpulse energy.In addition to uncoated optical components, optical coatings are also subject to damage from the presence of absorption sites and plasma burn. Figure 2 is a real-world image of coating failure due to a coating defect. For additional information on the importance of LDT testing on coatings, view The Complexities of High-Power Optical Coatings.Figure 1:Exposure Histogram of Laser Damage Threshold Probability versus Exposure SiteFigure 2: Coating Failure from 73.3 J/cm3 Source due to Coating DefectDefining Laser Damage ThresholdThere are many variables that affect the Laser Damage Threshold (LDT) of an optical component. These variables can be separated into three categories: laser, substrate, and optical coating (Table 1).LDT is typically quantified with units of power or energy densities for CW and pulsed lasers, respectively. Power density is the power per cross-sectional beam area. Similarly, energy density is the energy per cross-sectional beam area of a specific pulse duration. Lasers are available with a multitude of different wavelengths and pulse durations, therefore, it is important that the optical component's LDT is suitable for the laser's parameters. As a general rule of thumb, Newton's square root scaling factor can be used to determine whether a laser can be used with an optic that is not rated at thesame LDT pulse duration specification. Equation 1 calculates a new LDT for the different pulse duration.(1)The LDT(y) is the estimated LDT for laser Y, and LDT(x) is the specified LDT for laser x. τ is the pulse duration for laser y, and τ is the pulse durat ion for laser x. Additionally, since the energy of a photon is inversely proportional to its wavelength, then theoretically the LDT scales linearly as a function of wavelength, as expressed in Equation 2. yx(2)Where PD is the Power or Energy Density at the new wavelength, PD is the Power or Energy Density at the old wavelength, λ is the new wavelength, and λ is the old wavelength. A laser with a PD of 2 W/cm at 1064nm would have a power density of 1 W/cm at 532nm, 0.667 W/cm at 355nm, etc. (y)(x)yxCW222There are some drawbacks to the scaling, as there are non-linear effects associated with the conversion. However, they are a good rule of thumb for estimating the LDT of an optic at varying wavelengths and pulse durations. Note: Optical manufacturers only guarantee the specified LDT, not scaled estimations. Laser Damage Threshold (LDT) testing is crucial when working with laser optics. Understanding how LDT is tested and defined helps choose the right optical components for the application. Laser optics thatare designed with an LDT that is suitable for a given laser ensure superior results and product lifetime, and help avoid additional expenses due to damaged components.。

精编汽车焊装英文词汇

精编汽车焊装英文词汇

序号英文全称缩写中文全称A1AC Gun工频焊钳2Accuracy /ˈækjurəsi/精度3acquisition of signal信号采集4aging /ˈeidʒiŋ/时效处理5air压缩空气6air hoist /hɔist /气动葫芦7air pipe气管8air pressure regulator-filter空气过滤减压阀9air spanner气动扳手10alternator /ˈɔːltəneitə/交流发电机11alternator bracket发电机支架12anneal /əˈniːl/退火13Anti-lock Brake System ABS防抱死刹车系统14Arc Welding弧焊15Arm电极臂16assembly drawing装配图17asynchronous /eiˋsiŋkrənəs/ motor异步电动机18ATC自动换枪装置19Auto Gun自动焊钳20automatic feed自动喂料21automatic mechanical transmission AMT自动换档机械式变速器22automatic transmission /trænzˈmiʃən/AT自动变速箱B23ball bearing球轴承24bar /bɑː/棒材25Bearing轴承26belt皮带27billet /ˈbilit /方钢28black oxide coating发黑/发蓝29blank /blæŋk/坯料,半成品30Blanking /ˈblæŋkiŋ/下料31Body In White BIW白车身32BODY INSPECTION FIXTURE车身综合检具33body respot line车身补焊线34Body Shop车身车间35boring/ˈbɔ:riŋ/镗削36breaker /ˈbreikə/断电器37Brittleness脆性38BURR /bɜː/毛刺C39C Type Welding Gun C型焊枪40calibration /ˌkæliˈbreiʆən/校准41capacity /kəˈpæsiti/容量,规格42carbon-dioxide arc welding; CO2arc welding二氧化碳气体保护电弧焊43case hardening表面硬化44casting铸造45catalog /ˈkætəlɒg/库46centering table 对中台47chain 链条48chain gear链轮49chamfer倒角50chromium /ˈkrəʊmiəm/铬51chuck吸盘52clamping force夹紧力53clearance fit间隙配合54commission /kəˈmiʆən/现场调试55Computer Aided Design CAD计算机辅助设计56Computer Aided Process Planning CAPP计算机辅助工艺过程57Computer Numerical Control CNC计算机数控加工58Concurrent /kənˈkʌrənt/EngineeringCE并行工程59configuration /kənˌfigəˈreiʆən/组态60control cabinet /ˈkæbinit/控制柜61control panel控制屏,控制盘62control system操纵系统63converter /kənˈvɜːtə/变频器64conveyor /kənˈveɪə/输送机65conveyor belt皮带机66cooperation/kəuˌɔpəˈreiʃən/合作67coordinate frame of car车身坐标系68corrosion/kəˈrəʊʒən/腐蚀69cotter /ˈkɔtə(r)/开口销70counter weight配重71crack /kræk/裂纹72current gauge电流测试仪73cycle time节拍74cylinder /ˈsilində/气缸D75damped glue膨胀减振胶76data acquisition /ækwiˈziʃ(ə)n/数据采集77data preprocessing数据预处理78data processing数据处理79data processor数据处理器80debug程序调试81debur去毛刺82definition /ˌdefiˈniʆən/定义83deflection /offset偏移84delta三角形85d elay /ˈdiːlei/延时86depalletizer/diˈpæliˌtaizə/拆垛小车87die/dai/冲模88die changer模具交换器89digital model数模90Digital Signal Processing DSP数字信号处理91display /diˈsplei/显示92dowel/daʊəl/ pin定位销93drilling/ˈdriliŋ/钻削94duty ratio负荷比E95electric hoist /hɔist/电动葫芦96electric welding machine; electricwelder电焊机97electrically operated valve电控阀98electrocladding /plating电镀99electrode holder焊钳100electromagnetic /ilektrəʊˈmæɡnitik/compatibility /kəmˌpætiˈbiliti/EMC电磁兼容性101engine /ˈendʒin/发动机102epoxy resin glue for hemming环氧折边胶F103fault diagnosis故障诊断feedback /ˈfiːdbæk/反馈104fender /ˈfendə/防护板、翼子板105106field bus现场总线107fillet /ˈfilit/角焊缝fillet welding角焊108flange /flændʒ/法兰109Flexible Body Line FBL柔性车身线110111flow chart流程图112forging锻造113fork truck叉车frame/coordination坐标114friction stir welding搅拌摩擦焊115G116gantry /ˈgæntri/龙门架117gap /gæp/间隙118gauge /geidʒ/型板119gears /giə:s/档位120Geo-Gripper定位抓具121Geometry /dʒiˈɒmitri/GEO几何122Geo-spot定位焊点123gluing/glu:iŋ/涂胶124Gluing Robot涂胶机器人125governor /ˈgʌvənə/调速器126grinder /ˈgraində/磨光机127grinding /ˈgraindiŋ/磨削128gripper抓具129groove /gruːv/坡口130ground地线;接地131gun hanger焊钳吊钩132gun switch焊钳开关H133hand gun手动焊钳handling robot取件机器人;搬运机器人134135hanger/ˈhæŋə/吊具hardening and tempering调质136heat/thermal treatment热处理137138hemming滚边139hemming bed胎模hemming die包边模具140hemming press包边压力机141142hemming tool滚边工具horizontal /ˌhɒriˈzɒntl/水平143144hot-melt adhesive热熔胶145human ergonomics/ˏɜːgəˈnɔmɪks/人机工程human-machine interface HMI人机界面146147hydraulic /haɪˈdrɔːlik/液压的148hydraulic absorber液压缓冲器I149induction machine感应式电机150inertia惯性;惯量151information of weld point焊点信息152inner dimension内部尺寸153inspection fixture I/F检具154interference /ˌintəˈfiərəns/干涉155interference fit过盈配合156invoice发票157isolating transformer隔离变压器J158jog /dʒɒg /点动(机器人等)159joint /dʒɔint/运动关节K160kinematic /kɪniˈmætɪk/运动学的, 运动学上的L161laser welding/ laser beam welding激光焊162layout规划,布局图163leg/ fillet weld leg焊脚164lifter升降机165light curtain /ˈkə:tən/安全光栅166linear unit直线单元167location位置168location pin定位销169lubricating oil润滑油M170magnet/ˈmægnit/磁铁171main reducer主减速器172man-machine coordination人机协调173mass production大批量生产174Master Control Point MCP主要控制点175master control point chart MCP图176Master Control Section MCS主控截面177master station主站178mechanical transmission MT机械式变速箱179mechanism /ˈmekənizəm/机构180Metal Active Gas welding MAG金属极(熔化极)活性性气体保护焊181Metal Inert Gas welding MIG 金属极(熔化极)惰性气体保护焊182MF Gun中频焊枪183milling/ˈmiliŋ/铣削184modify /ˈmɒdifai/更改185mounting plate安装面186multiple spot welding多点焊N187normalizing正火188nozzle /ˈnɒzəl/喷嘴O189Off-line Programming OLP离线编程190On-Board Diagnostics OBD在线检测191open大开192operating mechanism操作机构193orientation /ˌɔːriənˈteiʆən/方位194over voltage relay过电压继电器P195pallet /ˈpælit /物料架,小车托盘196parameter /pəˈræmitə/参数197part drawing零件图198patent/ˈpeɪtnt, ˈpætnt/专利199pay roll工资单200peak time峰值时间201performance characteristic工作特性202peripheral外围设备203pillar /ˈpilə/立柱204pipe joint管接头205piston/ˈpɪstən/活塞206pitch节距207planing /ˈpleiniŋ/刨削208planning规划209pneumatic /njuːˈmætik/气动210pneumatically /njuːˈmætikəli/drived slider气动滑台211position位置212positioner变位机213postweld heat treatment/postheattreatment焊后热处理214press压力机215Press Line冲压线216pressing robot冲压机器人217process /ˈprəʊses/工序;工艺(强调过程)218profile轮廓219project /ˈprɒdʒekt /工程、项目、投影220projection welding凸焊221property /ˈprɒpəti/属性Q222quenching /ˈkwentʃiŋ/淬火R223rack /ræk/支架;齿条224rail /reil/轨道;横梁225reachable可达226reducing valve减压阀227Regulator Interface Panel RIP水气排228Reinforce glue补强胶229reinforcement /ˌriːinˈfɔːsmənt/加强230reliability /riˌlaiəˈbiliti/可靠性231rid棱;加强肋232rigidity /riˈdʒidəti/刚度233robot programming language机器人编程语言234robot simulation机器人仿真235robot teaching机器人示教236roller /ˈrəulə/滚头237rope hemming水滴包边S238sandblast /ˈsændblɑːst/喷砂239Sealer Pump涂胶泵240seam /siːm/接缝241section型材,断面242security /siˈkjuəriti/lock安全锁243self-lubricant/self ˈlu:brikənt/ Bearing润滑轴承244semiopen小开245sensor /ˈsensə/传感器246Servo Gun伺服焊钳247servo motor伺服电机248short-circuiting,bridge短路249shuttle /ˈʆʌtl/往复输送250simulated interrupt仿真中断251Simulation仿真252simultaneous Engineering SE同步工程253solenoid /ˈsəulinɔid/valve/vælv/电磁阀254spatter /ˈspætə/飞溅255spherical /ˈsferɪk(ə)l / roller万向球256Spot Welding Sealants点焊密封胶257spot welding; resistance spotwelding点焊258spring /spriŋ/弹簧259squeeze挤压260stability /stəˈbiliti/稳定性261stand /stænd/换枪架262station /ˈsteiʆən/工位263steel rail 钢轨264strategic/strəˈtiːdʒɪk/战略的265strength /streŋθ, strenθ/强度266stud /stʌd/welding植焊267summary /ˈsʌməri/摘要268surface roughness表面粗糙度269symmetrical对称的;平衡的T270tapping攻丝271task /tɑːsk/任务272technique /tekˈniːk /工艺(强调技术手段)273temperature control device温度控制元件274tensioning/ˈtenʃəniŋ/wheel张紧轮275terminal电极,终端(点);接线柱276test signal测试信号277thread/θred/螺纹278through /θru:/直通279throughput产量;生产能力280TIMER CONTROLLER T/C焊接控制箱281TIP电极帽282tip dresser修磨器283tip; contact tube导电咀284tool changer换枪装置285torch /tɔːtʆ/焊炬;弧焊焊枪286torque /tɔ:k/扭矩;转矩287touch screen;touch panel触摸屏288TRANSFORMER T/R焊接变压器289transition fit过渡配合290Trolly滑车291Tungsten Inert Gas/Gas TungstenArc WeldingTIG/GTAW钨极(非熔化极)惰性气体保护焊;钨极氩弧焊292Turn table回转台293turning /ˈtə:niŋ/车削294twist drill麻花钻295two-way valve二通阀U296unmanned无人化的V297valve /vælv/阀298velocity transducer速度传感器299vertical /ˈvɜːtikəl/垂直300virtual manufacturing虚拟制造W301washer垫片302wear and tear磨损303weldability焊接性304welding controller焊接控制器305welding current downslope time焊接电流衰减时间306welding cycle焊接循环307welding gun焊枪308welding machine; welder焊机309welding power source焊接电源310welding process焊接工艺311Welding Robot焊接机器人312welding spot焊点313welding technique焊接技术314wire cutting电火花线切割315worm蜗杆316worm gear=worm wheel蜗轮X317X Type Welding Gun X型焊枪BIW相关词汇318ASSEMBLY ASSY总成319BODY BUILD B/B总成320BODY COMPLETE B/C总成321BODY FLOOR B/F地板322BODY IN WHITE BIW白车身323BODY SIDE B/S侧围324BRACKET BRKT支架325CENTER CTR中央通道326COMPLETE COMPLT组件;总成327DOOR DR门328ENGINE ENG发动机329EXTENTION EXTN延伸330FLOOR FLR地板331FRONT FR;FRT前部332HEAD LAMP H/LAMP前大灯333INNER INR内部的334LEFT HAND LH左侧335LOWER LWR下部336MEMBER MBR纵梁337OUTER OTR外部338PANEL PNL面板339RADIATOR RAD水箱340RADIATOR SUPPORT R/SUPT水箱横梁341REAR RR后部342REINFORCEMENT REINF加强343RIGHT HAND RH右侧344ROOF RF顶盖345SIDE OUTER S/OTR外侧346SIDE SILL S/SILL侧裙边347SUB ASSEMBLY SUB ASSY分总成348SUN ROOF S/RF天窗349SUPPORT SUPT支撑350UNDERBODY UB地板351UPPER UPR上部352intake pipe进气管353fire wall,dash panel前围板354rear wall后围板355tailgate后背板356fender翼子板;挡泥板357fuel filler加油口358front pillar,A-pillar A柱359center pillar,B-pillar B柱360rear pillar,C-pillar C柱361rail横梁362hinge铰链363guide rail导轨。

Electrodynamically trapped Yb+ ions for quantum information processing

Electrodynamically trapped Yb+ ions for quantum information processing

a r X i v :q u a n t -p h /0602044v 1 3 F eb 2006Electrodynamically trapped Yb +ions for quantum information processingChr.Balzer,1A.Braun,1T.Hannemann,1Chr.Paape,2M.Ettler,2W.Neuhauser,2and Chr.Wunderlich 11Fachbereich Physik,Universit¨a t Siegen,57068Siegen,Germany2Institut f¨u r Laser-Physik,Universit¨a t Hamburg,Luruper Chaussee 149,22761Hamburg,Germany(Dated:February 1,2008)Highly efficient,nearly deterministic,and isotope selective generation of Yb +ions by 1-and 2-color photoionization is demonstrated.State preparation and state selective detection of hyperfine states in 171Yb +is investigated in order to optimize the purity of the prepared state and to time-optimize the detection process.Linear laser cooled Yb +ion crystals ions confined in a Paul trap are demonstrated.Advantageous features of different previous ion trap experiments are combined while at the same time the number of possible error sources is reduced by using a comparatively simple experimental apparatus.This opens a new path towards quantum state manipulation of individual trapped ions,and in particular,to scalable quantum computing.When investigating fundamental questions related to quantum mechanics experiments are called for where in-dividual quantum systems can be accessed and determin-istically manipulated.The interaction of trapped atomic ions among themselves and with their environment can be controlled to a high degree of accuracy,and thus allows for the preparation of well defined quantum states of the ions’internal and motional degrees of freedom.Trapped ions have proven to be well suited for a multitude of investigations,for instance,into entanglement,decoher-ence,and quantum information processing,and for ap-plications such as atomic frequency standards.Quantum information processing,in particular,requires accurate and precise control of internal and often also of motional quantum dynamics of a collection of trapped ions.In order to eliminate sources of possible errors,and thus prepare the ground to attain the ambitious goal of using trapped ions for large scale quantum computing or quan-tum simulations,it is desirable to simplify the apparatus used for such experiments as far as possible.An unprecedented degree of control of quantum sys-tems has been reached in recent experiments with trapped ions,for instance,with Be +[1],Ca +[2]and Cd +[3]ions.Mainly the type of ion used in such experi-ments determines the experimental infrastructure needed for controlled manipulation of these ions.The available ionic transitions,for instance,determine the radiation sources to be used:In Ca +an optical electric quadrupole transition has been used as a qubit leading to a coherence time limited ultimately by spontaneous radiative decay.More importantly,phase fluctuations of the laser light driving the qubit transition limit the available coherence time,even when using a highly sophisticated light source [4].Phase fluctuations of the radiation driving the qubit transition do not present a major obstacle,if a hyper-fine transition is used as a qubit (as,for instance,in Be +or Cd +),since such a transition is usually excited by a stimulated two-photon Raman process where only rela-tive fluctuations between the two driving fields limit the available coherence time.Choosing magnetic field insen-sitive states as a qubit,as was demonstrated recentlywith Be +,may further contribute to achieving the de-sired long coherence times [5].Another important characteristic that determines the suitability of a particular ion for experiments requir-ing quantum dynamics with minimal error is the initial preparation in one of the qubit states (before coherent op-erations take place),and state selective detection.This usually makes additional light fields necessary,such that up to a total of seven different light sources are in use in some experiments [6].For laser cooling of trapped ions a suitable optical elec-tric dipole transition is usually used.In Ca +the required wavelengths are accessible by diode lasers as opposed to Be +and Cd +where the necessary wavelengths are in the deep uv region making more complex laser systems and non-standard optical elements necessary.The efficient production of singly charged ions by pho-toionization of its neutral precursor was recently demon-strated with Ca +[6,7].This way of producing ions avoids difficulties that arise when employing ionization by electron collision as is done in experiments with Be +and Cd +and,at the same time,allows for isotope selec-tive loading of ion traps.Spectroscopic studies of Yb +ions have been carried out in order to use single ions or an ensemble of these ions to implement improved frequency standards [8].In this Letter we report on experiments with electrodynam-ically trapped Yb +ions where advantageous features of previous experiments with trapped Ca +,Be +,and Cd +ions are combined:i)Only two light fields,easily gener-ated by standard laser sources,are needed here for laser cooling and fluorescence detection [9].ii)Isotope selec-tive photoionisation of Yb and nearly deterministic load-ing of Yb +ions one by one into a linear electrodynamic trap is demonstrated for the first time.Highly efficient photoionisation is achieved using just one additional light field delivered by a readily available diode laser.iii)Laser cooled linear crystals of individually resolved Yb +ions are formed in an electrodynamic trap,to our knowledge,for the first time.A laser cooled Yb +ion crystal will be useful not only for QIP but also to enhance the pre-2 cision of a frequency standard based on ionic optical ormicrowave transitions[10].iv)Two hyperfine states mayserve as a qubit in171Yb+thus essentially eliminatingspontaneous ing an optical Raman transition ormicrowave radiation[11]to drive a hyperfine transitionallows for the extension of the coherence time even farbeyond a second[5,9].v)Investigations of state prepara-tion and state selective detection are reported and thesetwo processes are nearly optimized.An electrodynamic Paul trap with four parallel rodelectrodes(diameter of0.5mm)in a linear quadrupoleconfiguration(inner radius of0.75mm)is used for rf-confinement of Yb+ion crystals in the radial direction[12].Axial confinement is achieved by applying a DC-voltage to two endcap electrodes(diameter of0.4mm)spaced4mm apart on-axis,centered between the four rodelectrodes.All electrodes are made of Molybdenum andheld in place by ceramic spacers.The trap is operated at21.6MHz with an RF-amplitude of approximately400V,resulting in radial secular frequencies of350-450kHz andan axial secular frequency of40-60kHz.Alternatively,anRF-drive at10.2MHz is in use yielding radial and axialsecular frequencies of800kHz and65kHz,respectively.The endcap voltage is typically kept at about1.0V,incontrast to other linear traps,which report endcap volt-ages up to several hundred volts.For some experiments a miniature Paul trap was usedconsisting of a ring electrode of diameter2mm and two√endcap electrodes spaced≈3and the excited state6s6p1P1in neutral Yb.This one-photon process is isotope selective.The absorption of a second photon near369nm(the wavelength used todrive the S1/2↔P1/2transition in Yb+)leads to ioniza-tion(2-color ionization).Alternatively,the second stepof this ionization process is achieved by absorption of an-other photon near399nm(1-color ionization).This is possible since in the presence of the quasistatic electric trappingfield the ionization threshold is lowered.Both photoionization schemes yield ionization rates in the ex-periments reported here that are two(1-color)or three (2-color)orders of magnitude larger than ionization by electron collision(keeping the same neutral atomflux), are isotope selective,and allow for nearly deterministic loading of ion traps.Fig.2depicts important features of the photoioniza-tion process.The collected resonancefluorescence asa function of wavelength of the laser light exciting the atomic6s21S0↔6s6p1P1transition is shown in Fig.2 a).In order to reduce Doppler broadening,the atomicbeam and the laser beam are set at a relative angle of 90◦,thus allowing to resolve the isotopes with mass171, 172,173,174,and176(in a.m.u.).Fig.2b)compares the loading rates for electron impact and photoioniza-tion.It shows the totalfluorescence signal as a function of time while the trap is being loaded.During the time it takes to load a single ion using electron impact ionization the trap has already been loaded using photoionization such that thefluorescence signal saturates(due to the limited acceptance angle of the optical elements).Here, the rate for electron impact ionization is of the order 1/150≈0.0067ions/s while with photoionization load-ing rates about three orders of magnitude larger,approx. 10ions/s,are achieved.Finally,in Fig.2c)the atom flux is reduced such that nearly deterministic loading of a desired number of ions becomes possible.The exact number of ions in the trap is determined by counting them on the spatially resolvedfluorescence image of the ICCD-camera.The loading process can be interrupted at any time by blocking the ionization laser.Figure3shows two spatially resolved images of reso-nancefluorescence near369nm scattered by a Dopplercooled crystal of2or5172Yb+ions,respectively(with thefluorescence intensity color-coded).The images are averaged over10frames,with an illumination time of 200ms for each frame.These images were recorded with an axial secular frequencyωz=2π·52kHz.A quantum logic operation consists of three steps:first,the qubit is initialized in a given state.Second, qubit states are coherently manipulated,and third the resulting state is measured.In the paragraphs to follow thefirst and third step for the case of the171Yb+ion are described.The ability to coherently control the 171Yb+qubit with microwave radiation has been demon-strated[9,13],and therefore,is not treated here.Two hyperfine levels,|0>≡|S1/2,F=0>and|1>≡FIG.3:Spatially resolved detection of resonancefluorescence near369nm of a laser cooled crystal of2and5172Yb+ions, respectively.The length scales correspond to30(2)µm(left) and19(2)µm(right).|S1/2,F=1>of the S1/2ground-state of171Yb+serve as a qubit.In order to keep the experimental setup as sim-ple as possible,it is desirable to achieve state prepara-tion(as well as state selective detection)without adding more light sources to the setup.We therefore use the same optical transition near369nm from|S1/2,F=1>to |P1/2,F=0>that is used for laser cooling to also pre-pare and detect the qubit state.Optical pumping for state preparation from|S1/2,F=1>into|S1/2,F=0>is achieved by non-resonantly scattering light near369nm offthe state|P1/2,F=1>.For laser cooling,optical pumping is not desired and is hindered by irradiating the ion simultaneously with radiation at12.64GHz driving the qubit transition from|S1/2,F=0>to|S1/2,F=1>. Fig.4shows the rate of detected photons near369nm as a function of time after turning offthe microwave radia-tion,and thus depicts the optical pumping process into state|0>.FIG.4:Detected resonancefluorescence near369nm from a collection of ions as a function of time.The decrease with time indicates optical pumping into state|0>≡|S1/2,F=0> .This optical pumping process serves for state read-out and initialization(see text).The process just described serves simultaneously for state-selective detection as well as for state preparation, thus initializing the qubit for subsequent quantum logic operations:If,in step three of a quantum logic operation the ion is in state|0>,no scattered photons are detected; on the other hand,if the ion is in state|1>a number of photons is detected(see Fig.4).Even though the incident radiation at369nm is de-tuned by about15GHz from the resonance|S1/2,F=0>↔|P1/2,F=1>,this non-resonant scattering process leads to depletion of the population in|S1/2,F=0>.As4this process competes with state preparation it dimin-ishes the preparation efficiency.The optical pumping process has been investigated in detail i)experimentally,and ii),by solving the optical Bloch equations for this 8-level system in order to answer the following question:When using just one light field near 369nm,and by in-cluding the possibility of switching its polarization and intensity,what is the optimal detection and preparationefficiency that can be obtained?Fig.5a)shows the experimentally determined prepa-ration efficiency plotted against the angle between the polarization of the light field near 369nm and the di-rection of the external magnetic field (with the detuning and intensity of the light field near 369nm already op-timized.The solid line is meant to guide the eye.In Fig.5b)the computed preparation efficiency is plotted for three different light intensities (the Rabi frequency is given in units of the transition linewidth).Numerical simulations show that the maximal preparation efficiency achievable with a single light field near 369nm is approx-imately 96.4%.The experimentally obtained maximal value is 95.5(6)%.Angle (˚)P r e p a r a t i o n E f f i c i e n c y3060900.90.920.940.96P r e p a r a t i o n E f f i c i e n c ya)Angle (˚)P r e p . E f f i c i e n c yAngle (˚)FIG.5:The efficiency of preparation of state |0>≡|S 1/2,F=0>by optical pumping as a function of the angle αbetween the directions of light polarization and magnetic field,respectively.a)Experiment.b)Numerical simulation for different ratios of Rabi-frequency and spontaneous decay rate.c)Simulation for resonant excitation of |S 1/2,F=1>↔|P 1/2,F=1>.Another approach to state preparation is resonant pumping of the transition |S 1/2,F=1>↔|P 1/2,F=1>by a light field near 369nm.The short-lived |P 1/2,F=1>state decays into both hyperfine sublevels of the S 1/2ground state with a branching ratio of 2:1It therefore takes only a few optical pumping cycles at a rate of 19.6MHz to populate the |S 1/2,F=1>state with closeto 100%efficiency.This is much faster than the non-resonant depletion process described above.Fig.5c)shows the computed preparation efficiency close to 100%which,in addition,is nearly independent of the polariza-tion angle.171Yb +possesses the simplest possible hyperfine struc-ture of the electronic ground state S 1/2,and allows for choosing either a magnetic field insensitive qubit or qubit states whose energy separation depends on an applied magnetic field.The latter choice is suitable for experi-ments where i)the coupling between internal and exter-nal ionic degrees of freedom (necessary for conditional quantum dynamics)relies on a state dependent Zeeman force and ii)ions are individually addressed in frequency space [11].In a suitably modified ion trap microwave ra-diation may be used directly for coherent manipulation of hyperfine qubits,thus eliminating all possible sources of error that are present when first imprinting frequency and phase information of microwaves onto laser radiation used for driving a Raman transition,and then illuminat-ing ions with this light.Financial support by the Deutsche Forschungsgemein-schaft,Science Foundation Ireland under contract No.03/IN3/I397,and by the European Union (QGates)is gratefully acknowledged.[1]D.Leibfried et al.,Nature 438,639(2005).[2]H.H¨a ffner et al.,Nature 438,643(2005).[3]B.B.Blinov et al.,Nature 428,153(2004).[4]Ch.Roos et.al,Phys.Rev.Lett.,83,4713(1999).[5]nger et al.Phys.Rev.Lett.95,060502(2005).[6]The quoted number includes light fields employed for generation of ions by photoionization: D.M.Lucas et al.,Phys.Rev.A 69,012711(2004).[7]N.Kjaergaard et al.,Appl.Phys.B 71,207(2000);S.Gulde et al.,Appl.Phys.B73,861(2001).[8]For instance,R.Blatt,H.Schnatz,and G.Werth,Phys.Rev.Lett.48,1601(1982);Chr.Tamm,D.Schnier,and A.Bauch,Appl.Phys.B 60,19(1995);P.Gill et al.Phys.Rev.A 52,R909(1995).For a review see P.T.H.Fisk,Rep.Prog.Phys.60,761(1997).[9]Ch.Wunderlich and Ch.Balzer,Adv.At.Mol.Opt.Phys.49,293(2003).[10]For instance,J.J.Bollinger et al.,Phys.Rev.A 54,R4649(1996);V.Giovanetti,S.Lloyd,L.Macone,Phys.Rev.Lett.96,010401(2006).[11]F.Mintert and C.Wunderlich,Phys.Rev.Lett.87,257904(2001);C.Wunderlich,in Laser Physics at the Limit (Springer Verlag,Heidelberg,2001),p.261;D.Mc Hugh and J.Twamley,Phys.Rev.A 71,012315(2005).[12]J.D.Prestage,G.J.Dick,and L.Maleki J.Appl.Phys.66,1013(1989).[13]Th.Hannemann et al.,Phys.Rev.A 65,050303(2002).。

隆突性皮肤纤维肉瘤的诊疗进展

隆突性皮肤纤维肉瘤的诊疗进展

•综述•隆突性皮肤纤维肉瘤的诊疗进展刘珍如 周 园 刘梦茜 王晓晴 综述,王大光 审校(南京医科大学第一附属医院皮肤科 江苏 南京 210029)[摘要]隆突性皮肤纤维肉瘤(Dermatofibrosarcoma protuberans,DFSP)是一种低度恶性肿瘤,早期DFSP临床症状不典型、特异性低,导致临床医师容易漏诊、误诊,此外,DFSP经手术治疗后仍有高复发率,部分病变更会出现纤维肉瘤化改变,增加其转移风险、并提示预后不佳。

近年来,许多研究开始关注DFSP的诊断及治疗,透过皮肤镜、病理活检帮助医师早期诊断,提高疾病检出率,并通过手术、放疗及化疗等治疗,有效降低病变复发率、避免远处转移,本文就DFSP的最新治疗进展作一综述。

[关键词]隆突性皮肤纤维肉瘤;纤维肉瘤样隆突性皮肤纤维肉瘤;莫氏手术;皮肤镜;伊马替尼[中图分类号]R739.5 [文献标志码]A [文章编号]1008-6455(2021)03-0171-04Research Progress in Diagnosis and Treatment of Dermatofibrosarcoma ProtuberansLIU Zhen-ru,ZHOU Yuan,LIU Meng-xi,WANG Xiao-qing,WANG Da-guang(Department of Dermatology, the First Affiliated Hospital of Nanjing Medical University, Nanjing 210029,Jiangsu,China)Abstract: Due to the atypical and low specificity clinical symptoms in early stage,Dermatofibrosarcoma protuberans (DFSP) is a low grade malignant tumor which might likely be misdiagnosis. In addition, even after surgical treatment DFSP still has a high recurrence rate. Lesions with fibrosarcomatous changes were associated with increased the risk of metastasis and poor prognosis. In recent years, many studies have begun to focus on the diagnosis and treatment of DFSP. Recent study showed with dermoscopy and pathological biopsy can help with early diagnosis and signicfanctly improve the detection rate. Also, with optimal treatment through surgery, radiotherapy and chemotherapy, recurrence and distant metastasis rate could be effectively reduced. This article reviews the recent progress of DFSP.Key words:dermatofibrosarcoma protuberan;fibrosarcomatous dermatofibrosarcoma protuberans; Mohs microgrsphic surgery;dermoscopy; imatinib基金项目:国家自然科学基金(编号:81000703、81472896);江苏省自然科学基金(编号:BK2009437);江苏省六大人才高峰资助项目 (编号:2015-WSW-026)通信作者:王大光,南京医科大学第一附属医院皮肤科,主任医师;E-mail:*****************第一作者:刘珍如,南京医科大学第一附属医院皮肤科,硕士研究生;E-mail:*****************隆突性皮肤纤维肉瘤是一种生长速度缓慢、起源于皮肤,并可累及皮下组织的低度恶性肿瘤,于1924年由Darier 及Ferrandh首次报道[1-2],DFSP病理改变主要呈“蟹足样”浸润生长,男性发病率略高于女性。

LASER fl

LASER fl
Optimally the scanning speed should be slower
Iodine absorption spectrum
Generally an absorption spectrum can mostly give us information on the physical characteristics of excited states of molecules
Iodine fluorescence spectra
The expected Iodine fluorescence spectra should have peaks corresponding to different vibrational levels of the ground state
The fluorescence spectra was then recorded by scanning the monochromator 1 nm/min and slit width of 500 mm for a fixed Laser excitation wavelength
Getting a strong signal was difficult and the slit width could not be smaller, resulting in lower resolution
Rotational peak (17010.2 cm-1) selected for Laser excitation 120
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588,2
17010
0 cm-1
17030
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半导体激光在伤口照射上的应用

半导体激光在伤口照射上的应用

半导体激光在伤口照射上的应用英文版The Application of Semiconductor Lasers in Wound IrradiationSemiconductor lasers, a type of laser technology, have found numerous applications in various fields, including wound irradiation. The unique properties of semiconductor lasers make them highly suitable for wound treatment, promoting faster healing and reducing the risk of infection.How Semiconductor Lasers WorkSemiconductor lasers emit coherent light in a specific wavelength range. This light interacts with the tissue, stimulating cellular activity and promoting healing. The laser energy is absorbed by the cells, increasing metabolism and blood flow, which in turn enhances the healing process.Advantages of Using Semiconductor Lasers in Wound IrradiationFaster Healing: Laser irradiation stimulates fibroblasts, the cells responsible for collagen production, resulting in faster wound closure.Reduced Risk of Infection: The laser's antibacterial effect helps kill harmful microorganisms, thus reducing the risk of infection.Minimal Side Effects: Semiconductor lasers are non-invasive and have minimal side effects, making them safe for patients.Pain Relief: Laser treatment can also provide temporary pain relief, allowing patients to undergo wound treatment with less discomfort.ConclusionSemiconductor lasers have emerged as a promising tool in wound irradiation, offering faster healing, reduced risk of infection, and minimal side effects. As technology continues to evolve, the role of semiconductor lasers in wound care is expected to expand further.中文版半导体激光在伤口照射上的应用半导体激光作为激光技术的一种,已经在多个领域找到了应用,其中包括伤口照射。

Diode Laser Hair removal

Diode Laser Hair removal

Diode Laser Hair removalThe Diode Laser is very effective for darker skin. It is comparatively effective on finer, lighter hair. It has fast repetition rates and covers large areas and allows for fast treatment of larger body areas.Which Fitzpatrick Skin Type is the Diode laser suitable for?The Diode laser is mainly used for skin types I – III. But it can be used for other types of skin also.What are the advantages of Diode laser hair removal?-The Diode laser features a longer wavelength and thus able to provide better results among dark-skinned people.-This laser provides safer and deeper penetration into the skin layer.-Large areas of the body tend to recover faster.-Totally painless!!-SR mode is designed for skin rejuvenation.What are the side effects of Diode laser hair removal?There may be some scars, burns, skin discoloration, redness, and swelling.In some patients, a condition called urticaria sets in.What are the specifications of the Diode Laser?-Wavelength: 800, 810 nm-Spot size: 14x10 mm-Fluence: 10-100 J/cm2-Pulse width: 3-900 ms-Repetition rate: Up to 10 HzSummaryThe Diode laser is safe and efficient for hair reduction or removal. There may be some adverse pigment effects, but these are transient. The Diode laser is the best overall laser for all six skin types based on long term use and safety and is especially effective in people with skin types 1 to 4.半导体激光脱毛是目前最先进的一劳永逸的脱毛方法。

注射用血塞通致4例新的不良反应分析与评价

注射用血塞通致4例新的不良反应分析与评价

表2两组不良反应发生率对比(n ,%)3讨论宫缩痛与切口疼痛是导致剖宫产术后疼痛的原因,宫缩痛是主要疼痛来源,发生机制为子宫收缩导致局部组织缺血、缺氧,进而分泌前列腺素与乳酸、白三烯等致痛物质,产生疼痛感[3]。

剖宫产术后疼痛会导致自主神经失调与活动异常,增加心脏负荷。

有研究发现[4],疼痛会使机体大量分泌炎性介质,可能导致伤口延迟愈合,也会影响机体代谢状态。

因此,剖宫产术后要密切观察疼痛情况,采取正确措施控制疼痛。

布托啡诺是剖宫产术后镇痛常用药物,该药为阿片受体激动-拮抗剂,在激动k 受体时,也对μ受体具有激动与拮抗的双重作用[5]。

但是布托啡诺小剂量使用对宫缩痛抑制效果并不满意,镇痛评分较低,会导致焦躁不安,本研究对照组术后6h 、12h的Ramsay 镇静评分明显较观察组低,与相关研究结果相符。

但是有研究发现[6],大剂量使用布托啡诺易产生嗜睡、恶心、呕吐等不良反应。

本研究将氟比洛芬酯复合布托啡诺用于剖宫产术后镇痛,结果显示,两组不良反应无明显差异,但观察组镇痛效果明显优于对照组。

表明氟比洛芬酯复合布托啡诺具有协同作用,可增强镇痛、镇静作用。

氟比洛芬酯为新型非甾体类抗炎药物,具有抗炎、镇痛作用,相较于传统非甾体类抗炎药物,其药效持续时间长,具有靶向性,可缩短起效时间[7]。

剖宫产术后疼痛与切口疼痛刺激相关,外周组织大量释放细胞因子,参与激活及调节效应感应器,导致疼痛。

氟比洛芬酯可抑制前列腺素生成发挥抗炎作用,阻断伤害性刺激,从而达到镇痛目的。

经研究[8]发现,剖宫产48h 内乳汁分泌量少,48h 后泌乳量逐渐增多。

布托啡诺半衰期为3h ,氟比洛芬酯为5.8h ,因此,两种药物在术后48h 内使用可减少对新生儿造成影响,进一步表明氟比洛芬酯复合布托啡诺在剖宫产术后早期使用具有安全性。

综合上述,氟比洛芬酯复合布托啡诺在剖宫产术后镇痛中效果满意,且安全性高,具有推广价值。

参考文献[1]钱建学,须挺.静脉氟比洛芬酯与硬膜外曲马多用于剖宫产术后疼痛的临床效果分析[J].中国妇幼保健,2015,30(10):1610-1612.[2]Cidral -Filho ,F.J.,Mazzardo -Martins ,L.,Martins ,D.F.et al.Light-emitting diode therapy induces analgesia in a mouse model of postoperative pain through activation of peripheral opioid recep-tors and the L-arginine/nitric oxide pathway [J].Lasers in medical science ,2014,29(2):695-702.[3]倪小平,王鹏,陈杰,等.布托啡诺联合芬太尼+托烷司琼用于子宫下段剖宫产术后静脉自控镇痛的效果[J].医学临床研究,2017,34(2):366-368.[4]张晓峰,呼霞.氟比洛芬酯复合阿片类药物在妇科开腹术后镇痛中的应用[J].陕西医学杂志,2013,42(11):1495-1497.[5]杨秉融,牟洪勇,郭贵有,等.布托啡诺复合依托咪酯在子宫输卵管造影术中的麻醉效果及安全性[J].中国病案,2017,18(5):109-112.[6]马晓春,李娟,周玮,等.布托啡诺复合氟比洛芬酯用于剖宫产术后镇痛的效果研究[J].中国妇幼保健,2014,29(27):4497-4499.[7]任鹏程,吕海港,张旭东,等.布托啡诺复合氟比洛芬酯用于脊柱后路手术术后镇痛的临床观察[J].临床麻醉学杂志,2011,27(5):475-476.[8]邵志强,陈新忠,宋晓峰,等.氟比洛芬酯对子痫前期患者剖宫产术后静脉自控镇痛疗效观察[J].浙江医学,2015,37(12):1046-1050.△深圳市南山区科技计划(2017052)组别n 恶心呕吐发生率观察组45228.89对照组4037.50注射用血塞通致4例新的不良反应分析与评价刘南凯(中山市阜沙医院药剂科中山528434)摘要:目的:分析注射用血塞通所致新的不良反应,为临床合理使用提供参考。

nucleic acids research methods

nucleic acids research methods

Nucleic acids research methods are techniques and protocols used to study and analyze nucleic acids, including DNA and RNA. These methods are employed to investigate various aspects of nucleic acids, such as their structure, function, replication, and interaction with other molecules.Some of the commonly used nucleic acids research methods include: 1.Electrophoresis: This method is used to separate nucleic acids basedon their size, charge, or conformation. Electrophoresis separates nucleic acids in an electric field and can be performed in various formats, such as agarose gel electrophoresis, polyacrylamide gel electrophoresis, and capillary electrophoresis.2.Chromatography: Chromatography is a technique used to separatenucleic acids based on their charge, hydrophobicity, or size. Methods such as ion exchange chromatography, reverse phase chromatography, size exclusion chromatography, and affinity chromatography can be used to purify and separate nucleic acids. 3.Spectroscopy: Spectroscopy is a technique that involves themeasurement of electromagnetic radiation absorbed or emitted by a sample. Spectroscopic methods such as UV-visible spectrophotometry, fluorescence spectroscopy, circular dichroism spectroscopy, and Raman spectroscopy can be used to study the structure and interactions of nucleic acids.4.Hybridization: Hybridization is a method used to detect and analyzenucleic acid sequences based on their complementarity. In situ hybridization, Southern blotting, Northern blotting, and DNA microarrays are some of the commonly used hybridization methods.5.Sequencing: Sequencing is a method used to determine the order ofbases in nucleic acid sequences. Sequencing techniques such asSanger sequencing, pyrosequencing, and next-generation sequencing are commonly used to generate high-throughput sequence data for nucleic acid analysis.6.Mass spectrometry: Mass spectrometry is a technique used to analyzethe mass and composition of nucleic acid molecules. Methods such as matrix-assisted laser desorption/ionization (MALDI) and electrospray ionization (ESI) can be used to analyze nucleic acids.puter-aided analysis: Computer-aided analysis is a method thatinvolves the use of computational tools to analyze nucleic acid sequences and structures. Methods such as sequence alignment, structure prediction, and docking simulations can be used to study nucleic acid interactions and complexes.These methods can be used individually or combined depending on the specific research question and the experimental design. Nucleic acids research methods are essential for basic research as well as for applied fields such as diagnostics, therapeutics, and biotechnology.。

Laser nano-manufacturing – State of the art and challenges

Laser nano-manufacturing – State of the art and challenges

Laser nano-manufacturing–State of the art and challengesLin Li(1)a,*,Minghui Hong b,Michael Schmidt(3)c,Minlin Zhong d,Ajay Malshe(2)e, Bert Huis in’tVeld(3)f,Volodymyr Kovalenko(1)ga Laser Processing Research Centre,School of Mechanical,Aerospace and Civil Engineering,The University of Manchester,M139PL,UKb Department of Electrical and Computer Engineering,National University of Singapore,Singaporec Photonic Technologies,FAU Erlangen-Nuremberg,Germanyd Department of Mechanical Engineering,Tsinghua University,Chinae Department of Mechanical Engineering,University of Arkansas,USAf Department of Mechanical Engineering,University of Twente,The Netherlandsg National Technical University of Ukraine,Ukraine1.IntroductionThe need for nano-manufacturing is dictated not only by the requirement of increasingly sophisticated devices and structures with novel properties but also by the trend of decreasing component sizes,material usages and energy consumption of products.To meet the demand for product miniaturization and nano-material and structures enabled novel functionality,a logical step is to achieve the desired nano precision and resolution through the development and wide implementation of nano-fabrication technologies[78,119].Nano-scale manufacture refers to the production of structures,materials and components with at least one of lateral dimensions between1nm and100nm including surface and sub-surface patterns,3D nano structures, nanowires,nanotubes and sers have provided important opportunities in the realisation of nano-manufacturing.This paper reviews the progress in the development of laser based nano-manufacturing technologies and associated sciences in order to understand the state of the art and challenges.Fig.1shows the scope of the paper with three main areas of focus:(1)laser fabrication technologies for surface and subsurface nano struc-tures including nearfield and farfield techniques,(2)laser synthesis of nano materials including nanoparticles,nanowires and nanotubes,(3)laser fabrication of3D nano structures and devices primarily based on additive or bottom-up nano-manu-facturing techniques.Their industrial applications and scientific/ technological challenges are ser fabrication of surface nano-structures2.1.Diffraction limits to laser beamsLaser materials processing has been successfully applied in industry for several decades for cutting,welding,drilling,cleaning, additive manufacturing,surface modification and micro-machin-ing.In most cases,the feature size and resolution of machining are above1m m.One of the reasons for the limited resolution is the diffraction limit of the laser beams in the farfield(where the target surface from the optical element is greater than the optical wavelength)governed by:d¼l2n sin a(1) where d is the minimum beam spot diameter,l is the laser wavelength,n is the refractive index of the medium of beam delivery to the target material and a is the beam divergence angle. The best theoretical resolution is therefore around half of the laser wavelength.For most high power engineering lasers the optical wavelengths are within248nm–10.6m m.Therefore,there are considerable challenges to achieve nano-scale(100nm)resolu-tion in direct laser fabrication of surface structures.To improve the fabrication resolution a number of approaches have been considered including the use of high numerical aperture optics and shorter wavelength light sources.For example,deep ultra-violet(DUV,ArF193nm)laser sources have been used in producing lines of130nm and90nm lithography(32nm and 45nm with optics immersed a high refractive index liquid).To achieve smaller surface patterning feature sizes,F2lasers of 157nm wavelength and extreme ultraviolet(EUV)Xe or Sn plasma systems with a13nm wavelength are used for nanolithography. However,these sources are costly,low output power and unstableCIRP Annals-Manufacturing Technology60(2011)735–755A R T I C L E I N F OKeywords:LaserNano manufacturing Material A B S T R A C TThis paper provides an overview of advances in laser based nano-manufacturing technologies including surface nano-structure manufacturing,production of nano materials(nanoparticles,nanotubes and nanowires)and3D nano-structures manufacture through multiple layer additive techniques and nano-joining/forming.Examples of practical applications of laser manufactured nano-structures,materials and components are given.A discussion on the challenges and outlooks in laser nano-manufacturing is presented.ß2011CIRP.*Corresponding author.Contents lists available at ScienceDirectCIRP Annals-Manufacturing Technology journal homepage:/cirp/default.asp0007-8506/$–see front matterß2011CIRP. doi:10.1016/j.cirp.2011.05.005in light intensity.Strong absorption of the UV light by air molecules requires the nanolithography to be carried out in a vacuum or dry high purity N 2gas protection chamber.How to overcome the optical diffraction limit with stable UV or visible,IR light sources is attracting much research interests in the world.Near field optics utilizing evanescent waves at the close proximity (within the length of the light wavelength)from the focusing optics have been recently applied for laser based nano-fabrications beyond the diffraction limits.In addition,femto second pulsed lasers have been used to achieve far field nano-resolution fabrication based on ablation threshold setting of the Gaussian beam profile of the lasers and non-linear light absorption ser radiation on scanning probe tips for nano-fabrication is not included in this paper as it was reported elsewhere [111].In the following sections,recent developments in near field laser nano-fabrication techni-ques,far field femto second laser nano-fabrication and laser induced self-organising nano-ripple formations are summarised.2.2.Scanning near field photolithography (SNP)using laser coupled near field scanning optical microscopy (NSOM)SNP is based on the coupling of a laser beam (e.g.a frequency doubled argon ion laser at l =244nm)with an optical fibre based Near-field Scanning Optical Microscope (NSOM,first demonstrated in 1992)with a very fine tip (typically 50nm)and very close (10–20nm)tip to target surface distance.A high resolution (beyond diffraction limit)evanescent energy field generates at the tip and decays exponentially with increasing distance.The nanometer distance between the tip and target ensures that the evanescent wave arrives at the target surface with sufficient energy density.The patterned photo-resist is further treated by chemical etching,plasma etching or UV light radiation to create nano-scale patterns on the substrate.The technique was first reported by Lo and Wang in 2001to demonstrate 128nm resolution fabrications [100].Sun and Legget from Sheffield University,UK [172,173]selectively oxidized a strongly bound self-assembled nanolayer (SAM)photo resist on a gold substrate using the SNP technique (the terminology of SNP was first proposed in 2002)followed by chemical etching to realise 20–55nm resolution in surface patterning.This is matching the resolution by electron beam lithography but without the use of a vacuum chamber.The technique was further developed by scientists at Singapore Data Storage Institute and National University of Singapore,using a frequency-doubled Ti:Sapphire femto-second laser at l =400nm,coupled into an NSOM fibre probe to achieve 20mm resolution surface patterning on a UV photo resist (around 40–120nm thickness)spin coated on a Si substrate for data storage applications [21,56,93–95,217].The laser etched depth was 20–100nm.The tip/sample distance was regulated by a tuning-fork-based shear-force feedback.Typical writing speed is 8–12m m/s.In the coupled laser and NSOM nano-fabrication technique,the probe-to-sample distance is a critical parameter to control both the nano-feature size and shape.At a small probe diameter and probe-to-substrate distance,the NSOM overcomes the traditional far-field diffraction limit and can be used to obtain sub-wavelength-size patterns.Fig.2shows an example of nano-line arrays created at different incident laser powers.In addition,higher writing speed leads to shorter exposure time and thus lower exposure dose,resulting in a narrower line width and shallower depth.Considering that there is a melting threshold of the NSOM tip metal coating,a low power (<1mW)laser source is typically used to avoid damaging theNSOM tip.For the photo-resist exposure process,exposure energy dose is another important parameter,which is decided by exposure UV light energy and exposure time.The high resolution of the SNP technique is comparable to electron beam lithography.Furthermore,as the nano-features can be fabricated in air,with a multi-NSOM fibre tip design,parallel nanolithography can be realised for high speed surface nano-structuring.The drawbacks of the technique include the requirement of high precision nano-distance control between the fibre tip and the target,and potential contamination or damage to the fibre tip.If the target surface is rough (>50nm Rz)then it is difficult to apply the technique for uniform pattern writing.A recent development has enabled a nano-second laser NSOM technique (200nm probe diameter)to be applied for direct fabrication of nano-scale features on Si without the use of subsequent photo or chemical etching [165].2.3.Nano ridge aperture (bowtie)beam transmission enhanced nano-fabricationThe amount of light transmission through a small aperture of an object depends on the aperture size,d a ,relative to the wavelength,l ,of the light source.For an aperture smaller than the laser wavelength,light transmission is restricted.For example,for a circular aperture,the transmission efficiency is on the order of (d a /l )4due to the optical diffraction effect [11].Researchers in Perdue University,USA,found that,with a specific aperture geometry such as a bowtie or H,high energy laser beams can be delivered through the aperture with much less attenuation than a circular aperture and the energy is sufficient to produce nano-scale patterns on a surface through contact lithography [29,226].The enhancement was found to be due to near field surface plasmonic effect [29,227].Fig.3a shows a typical bowtie aperture used for nano-fabrication.The aperture was made of atomic force microscope cantilever probe (Si 3N 4coated with an Al film)with the gold coating removed from the back side and the bowtie geometry milled using a focused ion beam.The aperture had 180nm Â180nm outline dimension and a 30nm gap.When a laser beam of 800nm wavelength and 50fs pulse width at 1.5–7.9mW power passed through the aperture,lines with widths down to 62nm and 2nm depth were produced on a photoresist material at a scanning speed of 2.5m m/s as shown in Fig.3b.The distance between the bowtie aperture tip and the target surface was 30nm.The laser beam intensity at the tip of the bowtie aperture was found 39.8times that of the incoming beam due to plasmonic enhancement.As this phenom-enon only occurs at the near field,some researchers also classify this technique as the NSOM based nano-fabrication.2.4.Optically trapped micro-sphere assisted nano-writing (OTAN)Scientists at Princeton University recently developed a laser nano-patterning technique based on laser tweezers [118].AFig.1.Illustration of the scope of thepaper.Fig.2.Nano-lines created by the coupled fs laser/NSOM SNP technique at different incident laser powers [55].L.Li et al./CIRP Annals -Manufacturing Technology 60(2011)735–755736transparent sphere (polystyrene)was held by a focused continuous wave laser beam (converted to a Bessel beam using an axicon lens)as in a typical laser tweezers setup in a liquid environment.At the same time,another pulsed laser (355nm wavelength,15nm pulse length,15nJ–8mJ pulse energy)passes through the sphere and produces a focused energy spot at the bottom of the sphere based on the near field evanescence wave effect.By traversing the sphere over a surface,nano-scale patterns have been generated.Due to the balance of the laser beam radiation pressure with the electrostatic repulsion from the target surface [211],which develops due to ionic groups on the surfaces,the distance between the sphere and the target surface can be maintained constant even for a curved surface without any additional feedback control systems.Fig.4shows a typical process set up and an example of a nano-pattern fabricated using the technique.Arbitrary patterns with the line width around 100nm were demonstrated with 15nm feature size variation.The scientists at the Princeton group further developed the technique by splitting the sphere trapping beam into multiple beams using beam splitters to hold and move several micro-spheres (0.76–3m m diameters)simultaneously,while firing a pulsed power beam to them.Such a system enabled them to write a number of parallel nano-patterns on a polyimide film coated on a glass substrate [118].An advantage of the technique compared with other near field direct writing techniques is that for OTAN there is no need for distance control and it can work on rough surfaces [186].A limitation of the technique is that it can only operate in a liquid environment.2.5.Femtosecond (fs)laser direct writingThe process involved in the formation of nano-scale features by fs lasers is different from the conventional lasers.In fs laserinteraction with materials,the laser interaction time (10À15–10À13s)is shorter than the time for electrons to pass the energy to the lattice (around 10À11s).As a result,the material remains cool while absorbing the laser energy.The use of ultra-short pulse durations of the fs laser pulses restricts the heat diffusion,and improves surface roughness,and also minimizes damage to the adjacent areas.Due to the above mentioned advantages,fs lasers are used for writing couplers [120],waveguide amplifiers [162],diffraction gratings and memory bits [24].To achieve nano-scale resolution,the tip of Gaussian beam is used (setting the laser fluence low enough so that only the tip of laser beam is above the ablation or phase change threshold of the material).In this way,far field laser nano-fabrication beyond diffraction limit can be realised.Typical pulse energy of fs laser nano-fabrication is between 0.1and 100m J and power densities above 1TW/cm 2.Tight focusing of the light by a high NA telecentric lens is essential for fs laser nanofabrication.Another advantage of telecentric lens is that every successive scanning beam is parallel to the optical axis.Due to this,the beam is incident normally on the entire surface area and symmetrical features can thus be written.Minimal variation in laser focus energy and accuracy of focal spot/sample scanning ensure fabrication with high precision.The charge-coupled device (CCD)camera assists in optical adjustment and in situ fabrication monitoring [236].Three critical factors that govern the fs laser writing mechanism are chemical nonlinearity,material nonlinearity,and optical nonlinearity.When a high power density from a fs laser is incident on a target surface,photons are absorbed by either one-photon absorption (OPA),two-photon absorption (TPA),or the multi-photon absorption (MPA).Photon absorption caused by fs-laser beam irradiation leads to different processes such as ionization,electron excitation,and phase transitions.The electrons are agitated and their oscillatory energy is converted into thermal energy of the plasma by collisions with ions by the linear damping mechanism referred to as inverse Bremsstrahlung heating .This raises the temperature and the laser energy is absorbed by the plasma by OPA.These phenomena can occur only in a localized region around the focal point due to the high peak intensity.The separation between the high energetic electron cloud and the positively charged ions in the bulk causes a high voltage (known as Dember voltage)close to the surface which results in the repelling of materials in a process known as Coulomb Explosion.For this reason,the fs laser processing is also termed as cold laser processing and it is possible to write features even in transparent materials [109,121,126].In summary,the formation of nano-features is attributed to the interaction between the fs laser beam and laser-induced electron plasma and matter [159].Two photon absorption mechanisms are illustrated in Fig.5[84].In the figure,S 0,S 1,and S 2are ground state,one-photon allowed and two-photon allowed excited states,respectively.The incident light frequencies are v 1and v 2while the fluorescent emission frequency is v 3.It should be noted that in standard optical lithography,the materials respond to light excitation to the first order effect.For TPA and MPA in fs laser writing,the response is limited to two and higher orders and the square light intensity is also narrower than a linear one.This makes the photon energy of TPA less than thatofFig. 3.Nano bowtie aperture (a)and nano surface patterns produced by transmitting a laser beam through it (b)[29].Fig.4.Illustration of laser trapped micro-sphere nano-patterning.(a)Experimental set up and (b)an example of optically trapped micro-sphere nano writing.The scale bars on the larger picture and the zoomed-in pictures are 2m m and 250nm,respectively [118].Fig. 5.Schematic energy diagram of a TPA process [84](reproduced with permission from Elsevier).L.Li et al./CIRP Annals -Manufacturing Technology 60(2011)735–755737OPA.As a consequence,the volume involved in beam-material interaction reduces and this leads to better resolution in writing the features.The volume in which this energy is absorbed is less than the third order of the laser wavelength (l 3)and hence high spatial resolution of the writing process ( 100nm)beyond the optical diffraction limit is possible [176].For nanoscale writing,it is essential that the laser energy penetrates into the bulk material without any significant losses.For this purpose,a light source with near-infrared wavelength (such as l =800nm)is selected for surface,sub-surface and in-bulk writing.Due to the high transient power density,fs lasers can excite a wide range of materials and induce irreversible processes such as photopolymerisation,photoisomerization,and photoreduction.Femtosecond lasers have numerous advantages over longer pulsed lasers for materials processing [179,195–197]due to which they have been used for writing nano-features in a wide variety of materials such as metals,polymers and ceramics.Examples of the material,and dimensions of the nanofeatures ( 100nm)written by fs lasers are presented in Table 1and Fig.6.2.6.Micro-lens array for fabricating periodic nano-structuresPeriodic nanostructures are useful for plasmonic structures,photonic crystals,high density data storage,miniaturized radio frequency (RF)oscillators and optical gratings.Micro-lens array (MLA)lithography is a laser-based technique being developed for rapid fabrication of large-scale periodic nanostructures.MLA consists of a series of miniaturized lenses of identical sizes and focal lengths,typically arranged hexagonally or squarely packed.When used in a typical optical system,an MLA can focus an incident light beam to form a series of parallel light spots in the focal plane.Downscaling of the diameter,D ,and the focal length,f ,of a lens improves its optical performance [52].For a fixed F number F =f /D ,the diffraction-limited resolution is given by d x %l F 2which is independent of the lens scale.However,the wave aberrations which describe the deviation of the actual wave front from a perfect spherical wave front,are less for smaller lenses for the same F number and wavelength.On the other hand,small lenses have a shorter focal length [200].The early studies of micro-lens array based photolithography were for the manufacturing of periodic micro-scale features [58,200].As the micro-lens array production technology improves,the size of micro-lenses get smaller and so are the feature sizes.For example,scientists at Singapore Data Storage Institute and National University of Singapore used an 800nm wavelength,100fs laser to irradiate a 30nm-thick GeSbTe layer sputtered onto a polycarbonate substrate.It created thousands of field emission transistor structures in a few minutes with a gate line width of 200nm.In addition,using an alkaline solution to etch the material after laser radiation,nanostructures down to 55nm on the thin film were produced [96].To achieve further reduction in feature sizes,they manufactured a micro lens array on a quartz substrate with a diameter and pitch of 1m m each,which consists of 2500Â2500(6.25million)lenses covering an area of 5mm Â5mm.UV light-sensitive photoresist irradiated by a 248nm wavelength,23ns pulse width KrF excimer laser through the MLA created nano-dots as small as 78nm in diameter,at a resolution of one-third the operating wavelength [92].Fig.7shows an example of periodic patterns produced by a micro-lens array system.A critical requirement of the micro-lens array lithography fabrication technology is that the lens must be horizontal to the target surface within the entire radiated area to ensure the beams are vertical to the surface so that the feature sizes are identical.The lens to target surface is also needed to be controlled precisely.For a non-flat surface,it is difficult to fabricate uniform nano-structures using this technique.2.7.Far field laser interference lithography (LIL)Laser-interference lithography is a large-area,maskless,and noncontact nanofabrication technique suitable for repeatable structures such as periodic lines and 2D shapes.It is based on the interference of two or more coherent light beams that form a horizontal standing-wave pattern.The minimum spacing,d L ,between the lines is determined by the laser wavelength,l ,and angle,a ,between the laser beams as in:d L ¼l2n sin ða =2Þ(2)This interference pattern is then recorded on the exposed ser-interference lithography can be used to fabricate micro-and nano-surface structures in large areas.By overlapping exposures at different angles,various patterns (e.g.circular,square,and hexagonal geometry)can be produced.Table 1Examples of nano-features written by fs lasers.Base materialNano-featuresReferences Copper thin film Pits of 75nm[195]Amorphous silicaGratings of 15nm width[57]Urethane acrylate resin,SCR 500Wires of 65nm lateral width at central portion [177]Glass Hillocks of 40–70nm height [193,194]TeO 2Voids of 30nm width [158]SiO 2Stripes of 20nm width[159]Bulk aluminium Irregular nanoentities with average size of 100nm [170]Lithium niobateThick layer of 100nm[24,109,110,169]CVD diamond surfaceRipples with periodicity of 50–100nm[136]AAO matrix (Au deposited into anodized aluminium oxide)Nanorods of diameter 20–40nm and length of $50nm [147]Commercial resin,SCR 500Lines with width of 23nm[180]Gallium nitride Craters of depth varying from 26to 40nm[126]Silica glass Wires of width of 15nm and holes of 20nm diameter [70]TiO 2Ripples with depth of 100nm[23]Fig.6.Nanofeatures developed in (a)amorphous silica [57](reproduced with permission from Elsevier),(b)urethane acrylate resin,SCR 500[176](reproduced with permission from the Optical Society of America),(c)commercial resin,SCR 500[180](reproduced with permission from American Institute of Physics),(d)glass [193],(e)TeO 2[158],(f)photoresist thin film [94],(g)CVD diamond surface [136](reproduced with permission from American Institute of Physics).L.Li et al./CIRP Annals -Manufacturing Technology 60(2011)735–755738Examples include nano-cone arrays on Ni–Cr alloy (Fig.8)and Au/Ag bi-metallic plasmonic structures on quartz ing this approach,after only a few minutes of UV light exposure,followed by photoresist development and chemical etching,periodic nano-lines and nano-dot arrays can be created over a centimetre scale area.To further improve the resolution,immersion laser interference lithography was developed at Max-Planck Institute of Micro-structure Physics,Germany [18].This is to increase ‘‘n ’’in Eq.(2)by introducing a Littrow prism and water as the immersion liquid.In this case,n =1.51.Line patters with a period less than 100nm and a width of 45nm were demonstrated with a 244nm wavelength laser (Fig.9).Another way of increasing the resolution is by reducing the laser wavelength,such as the use of an extreme ultraviolet laser source (e.g.an A +8laser at a 46.9nm wavelength).A great advantage of this method is the increase of ablation depth to over 120nm on Si based photo-resist [112].By combining an EUV laser and Lloyd’s mirror interferometer (Fig.10),nanostructures of 60nm feature size were produced on PMMA (Fig.11).The ablation depth is 20–30nm.Also lines with 95nm width were produced on Au substrates using the technique by the same group.A drawback of the EUV technology is that the process will need a vacuum chamber to operate due to the use of EUV system which can easily ionize gases if it is operated in non-vacuum conditions.2.8.Near field interference lithographyNear field interference lithography is based on evanescent (non-propagating)wave or surface plasmon wave interferences.The purpose is to defeat the diffraction limit of the lasers to fabricate smaller nano-structures.Evanescent interferometric lithography (EIL)or evanescent near field optical lithography (ENFOL),or evanescent wave interference lithography (EWIL)was first demonstrated using a mercury arc lamp in 1999by Blackie et al.at University of Canterbury,New Zealand [3,14].Laser based evanescent wave near field lithography using total internal reflection (TIR)was first reported in 2006by Martinez-Anton of University Complutense Madrid,Spain [115].A typical TIR configuration is shown in Fig.12with two intersecting beams at an angle to enable the total reflection to occur to create periodic evanescent waves.Theprismrge area micro/nanostructures fabricated by laser MLA [92].Fig.8.A nano-cone structure fabricated by laser interference lithography (height 40nm and width 30nm)[152].Fig.9.Photoresist patterns created by immersion laser interference lithography.(a)Low magnification and (b)high magnification images of the pattern;the width of the resist lines is 43.4nm.(c)Silver lines after evaporation of 15nm Ag and lift-off [18].Fig.10.A typical optical configuration for Lloyd’s mirror interferometer laser interference lithography,where u =a /2[112].Fig.12.Illustration of a typical TIR optical configuration to generated evanescent waves through interference of tow intersecting beams [115].Fig.11.Two dimensional nano patterns on PMMA produced by EUV laser interference lithography using Lloyd’s mirror interferometer with two exposures at different angles,(a)dots with 60nm FWHM feature size and a period of 150nm,(b)regular shapes dots,(c)elongated dots [112].L.Li et al./CIRP Annals -Manufacturing Technology 60(2011)735–755739was irradiated with split 405nm wavelength laser beams.Periodic surface relief gratings of around 100nm period were produced on photoresists using this technique [115].More complicated 2D nano-structures can be fabricated using multiple (more than 2)beam interference through polarization tuning,based on TIR evanescence wave near field lithography,as demonstrated by Chua and Murukeshan [22].The photoresist in optical contact with the TIR prism (rectangular)has a lower refractive index than the prism.Patterns of 70nm feature size had been produced using this method (Fig.13).A drawback of this method is that the depth is shallow due to the non-propagating nature of the evanescent wave.The energy transmission through the masks is also very low.Surface Plasmon Interference Lithography (SPIL)is another near field lithographic technique developed recently to improve energy transmission and fabrication depth over the evanescent wave lithography.It is based on energy field enhancement by the interaction of light with surface Plasmon (SP,collective electron oscillation)waves induced around the nano-scale metallic struc-tures and a dielectric interface.If the metallic mask is very thin (e.g.50nm),surface Plasmon waves can be generated on both surfaces,even the structures are not through the full thickness of the metallic film.The enhancement,through the coupling between the surface plasma waves and the evanescent waves,can be several orders of magnitude in intensity compared with the incoming beam.The wavelength of the excited surface Plasmon wave is shorter than that of the exciting laser at the same frequency.Therefore higherresolution is expected.The wavelength of the exciting laser,l (i ,j ),needs to match the materials and the structures of the mask.Their relationships can be found from [168]:l ði ;j Þ¼affiffiffiffiffiffiffiffiffiffiffiffiffiffii 2þj 2q ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffie d e m e d þe mr (3)where a is the metallic mask periodic nanostructure period,e a and e m are the dielectric constants of the mask metal and the surrounding dielectric medium,respectively and i ,j are mode indices.For example,a UV light can excite surface Plasmon waves on Al with a nanostructure period of 220nm.A green or blue light can excite surface Plasmon waves on a silver mask with a period of 400–500nm.A larger period allows longer exciting wavelengths.The SPIL technique for the fabrication of periodic surface nanostructures was first reported independently by two separate groups (University of California in USA and RIKEN in Japan)in 2004[103,168]using an Al or a silver mask.An example of a typical configuration for the SPIL technique is shown in Fig.14.For an 80nm thick Al mask of 20nm diameter holes and 220nm period (fabricated using a focused ion beam)and 30nm spacer (PMMA)and irradiated with an arc lamp with a peak intensity at 365nm,90nm periodic structures were produced on a photoresist [168].The RIKEN group fabricated periodic 100nm lines using a silver mask radiated with a 436nm light.They termed the method as SPRINT (Surface Plasmon Resonance Interference Nanolithography Technique)and proposed to use imperforated metallic marks which have corrugated surfaces on both sides of the metallic mask.The illuminated side collects the light and induces the SP waves on the other side of the target material through SP coupling.Sreekanth et al.at Nanyang Technological University of Singapore compared standard far field laser interference lithography,near field evanescent wave lithography and the SPLIT techniques in nano fabrication of period surface structures [167].They found that that the SPIL technique can produce deeper features than the evanescent wave lithography technique and both near field lithography techniques have a better resolution than the far field lithography technique.Fig.15shows an example of periodic dot arrays fabricated on a Si wafer using the SPIL technique with a UV Argon ion laser at 364nm wavelength,which has a 82Æ11nm feature size,164Æ11nm period and an average height of 180nm [167].2.9.Contact particle lens array nano-fabrication (CPLA)This technique is based on the use of transparent micro spherical particles spread onto the target surface byself-assemblyFig.13.Two dimensional features fabricated using evanescent wave interference lithography generated by TIR of four p-polarized incident beams.(a)Theoretical inverse positional photoresist development rate at the interface between the prism and photoresist,(b)SEM image of hexagonal arrayed 2D features.Inset:Enlarged region showing the peak (P),valley (V)and saddle (S)regions (top right),(c)AFM image of the nano-structures [22].Fig.14.A typical process configuration for SPIL and an optical mask,(A)schematic drawing of the SPIL set up and (B)an Al mask for the SPIL experiment (fabricated using FIB)with a hole size of 160nm and a period of 500nm [168].L.Li et al./CIRP Annals -Manufacturing Technology 60(2011)735–755740。

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8新激#技%在'()*+,中./用By MarshmelloG E N E V A —Swiss and French researchers have found new laser technology for use in atomic clocks, which could raise the precision of timekeeping to los­ing just one second every 6 million years, according to a press release by University of Neuchatel on Sat­urday.Scientists from the Time and Frequency Labora­tory (LTF) of the University of Neuchatel, Switzerland, and their French partners developed a new class of thermal cesium jet clocks that are ten times more precise than existing atomic clocks.The technology will allow for better-synchronized telecommunications networks as well as improved communication among s a t e l l i t e navigation systems, according to the release.Laser diodes are the centerpieces of atomic clocks. They "interrogate# the atoms giving the refer­ence time, producing a light of a very precise fre­quency t o interface with atoms that create the refer­ence of passing time.The manufacture of this type of laser diode re­quires a very sharp technology, including large infras­tructures such as clean rooms, systems for deposition of semiconductor layers, and a controlled atmosphere."Laser diodes improve the performance of virtu­ally a l l types of atomic clocks. They are one of the LTF"s main research directions,# says Gaetano Mileti, deputy director of LTF."This research focuses on the study of newphysical processes generated by laser light in clocks and on the more technological aspects related to the development of the laser i t s e l f , as a new specific component. #More generally, the development of any instru­ment using laser diodes whose beam frequency can be controlled very precisely s t i l l opens perspectives be­yond the measurement of time.Thus future applications could be the analysis of the carbon dioxide content of the atmosphere involved in the greenhouse e f f e c t , or the gravitational wave de­tection, a Grail of fundamental physics.44Crazy English2018.5。

Dose critical in-vivo detection of anti-cancer dru

Dose critical in-vivo detection of anti-cancer dru

专利名称:Dose critical in-vivo detection of anti-cancer drug levels in blood发明人:Holly H. Miller,Tomas B. Hirschfeld,deceased申请号:US06/940972申请日:19861212公开号:US05001051A公开日:19910319专利内容由知识产权出版社提供摘要:A method and apparatus are disclosed for the in vivo and in vitro detection and measurement of dose critical levels of DNA-binding anti- cancer drug levels in biological fluids. The apparatus comprises a laser based fiber optic sensor (optrode) which utilizes the secondary interactions between the drug and an intercalating fluorochrome bound to a probe DNA, which in turn is attached to the fiber tip at one end thereof. The other end of the optical fiber is attached to an illumination source, detector and recorder. The fluorescence intensity is measured as a function of the drug concentration and its binding constant to the probe DNA.Anticancer drugs which lend themselves to analysis by the use of the method and the optrode of the present invention include doxorubicin, daunorubicin, carminomycin, aclacinomycin, chlorambucil, cyclophosphamide, methotrexate, 5-uracil, arabinosyl cytosine, mitomycin, cis-platinum 11 diamine dichloride procarbazine, vinblastine vincristine and the like. The present method and device are suitable for the continuous monitoring of the levels of these and other anticancer drugs in biological fluids such as blood, serum, urine and the like. The optrode of the instant invention also enables themeasurement of the levels of these drugs from a remote location and from multiple samples.申请人:REGENTS OF THE UNIVERSITY OF CALIFORNIA代理人:Shyamala T. Rajender,Nora A. Hackett,Henry P. Sartorio更多信息请下载全文后查看。

口腔护理 英语

口腔护理 英语

IntroductionOral care is an essential aspect of overall health and well-being, encompassing a wide range of practices aimed at maintaining the hygiene, function, and aesthetics of the oral cavity. It is a continuous, lifelong process that requires both individual commitment and professional guidance. This comprehensive analysis delves into various aspects of oral care, highlighting its significance, the multi-faceted approach to achieving optimal dental health, and the pivotal role of preventive measures, lifestyle choices, and professional interventions in ensuring a healthy mouth.Significance of Oral CareThe importance of oral care cannot be overstated, as it impacts not only dental health but also general health and quality of life. Firstly, effective oral care prevents the development of dental caries (cavities), periodontal diseases (gum disease), and oral infections, which can lead to tooth loss, chronic pain, and systemic health complications if left untreated. These conditions have been linked to cardiovascular disease, diabetes, respiratory infections, and adverse pregnancy outcomes.Secondly, oral health significantly influences one's ability to chew, speak, and smile confidently, thereby affecting nutrition, social interactions, and mental well-being. Moreover, maintaining a clean and healthy mouth contributes to a pleasant breath and enhances self-esteem, further enhancing overall quality of life.A Multi-Faceted Approach to Optimal Dental HealthAchieving and maintaining optimal dental health involves a multi-faceted approach, incorporating daily self-care, dietary habits, lifestyle modifications, and regular professional care. Each of these components playsa crucial role in preventing oral diseases and promoting oral health.1. **Daily Self-Care**: The cornerstone of oral care is daily brushing and flossing. Brushing twice daily with a fluoride toothpaste for at least two minutes, using a soft-bristled brush and a gentle circular motion, helps removeplaque – a sticky film of bacteria that forms on teeth and causes decay and gum inflammation. Flossing at least once a day removes plaque and food debris from areas where a toothbrush cannot reach, particularly between teeth and under the gumline.2. **Mouthwash Use**: While not a substitute for brushing and flossing, using an antiseptic or fluoride mouthwash can further enhance oral hygiene by reducing bacterial levels, freshening breath, and providing additional fluoride protection against tooth decay.3. **Dietary Habits**: A balanced diet rich in vitamins, minerals, and fiber supports overall health, including oral health. Limiting sugar intake and consuming foods that promote saliva production, such as fruits, vegetables, and water, help neutralize acids produced by bacteria, remineralize teeth, and cleanse the mouth. Avoiding acidic beverages and tobacco products, which can erode tooth enamel and increase the risk of oral cancer, is also vital.4. **Lifestyle Modifications**: Regular exercise, stress management, and adequate sleep contribute to a robust immune system, which can better combat oral infections. Additionally, abstaining from smoking and excessive alcohol consumption reduces the risk of oral cancer, gum disease, and tooth loss.5. **Regular Professional Care**: Visiting a dentist or dental hygienist every six months for check-ups and cleanings is crucial for early detection and treatment of oral issues. Professional cleanings remove hardened plaque (tartar) that cannot be eliminated through routine brushing and flossing, while dental exams can identify cavities, gum disease, oral cancer, and other potential problems. Regular x-rays help detect hidden tooth decay and monitor the health of jawbones and tooth roots.Innovations and Advances in Oral CareTechnological advancements and scientific breakthroughs have significantly enhanced the field of oral care, offering more effective, comfortable, and personalized solutions:1. **Advanced Dental Materials**: High-strength ceramics, composite resins,and improved dental adhesives have revolutionized restorative dentistry, enabling more aesthetic, durable, and minimally invasive treatments for tooth decay and damage.2. **Digital Dentistry**: Computer-aided design and manufacturing (CAD/CAM) systems, digital impressions, and 3D printing have streamlined dental procedures, increasing accuracy, efficiency, and patient comfort.3. **Lasers in Dentistry**: Laser technology has found applications in various dental procedures, such as cavity detection, gum disease treatment, tooth whitening, and surgical procedures, offering reduced pain, bleeding, and recovery time.4. **Personalized Preventive Care**: Salivary diagnostics, genetic testing, and artificial intelligence-powered risk assessments enable tailored preventive strategies based on individual patients' unique risk profiles and oral microbiomes.5. **Tele-dentistry**: Remote consultations, monitoring, and education via video conferencing and mobile applications have increased access to dental care, particularly for those in remote or underserved areas.ConclusionOral care is a vital component of overall health, requiring a multi-faceted approach involving daily self-care, dietary habits, lifestyle modifications, and regular professional care. Technological advancements and scientific innovations continue to enhance the quality and accessibility of oral healthcare, offering more personalized, effective, and comfortable solutions. By embracing these strategies and staying informed about the latest developments in oral care, individuals can significantly improve their dental health, overall well-being, and quality of life.。

维生素D佝偻病英文

维生素D佝偻病英文
It is most common in fans and children, but can also be found in adults who are severely deficient in vitamin D
Vitamin D is essential for the absorption of calculus and physiology, which are critical for healthy bone development and maintenance
Imaging Techniques for Assessment
Computed tomography (CT) and magnetic resonance imaging (MRI) These advanced imaging techniques can provide detailed views of the bones and soft issues, targeting in the diagnosis of rickets and its applications
It can lead to delayed motor development, frames, and defects in imports and children
In adults, multiple vitamin D deficiency can cause osteoporosis, a condition characterized by bone paint and muscle weakness
目录
01
Introduction to Vitamin D Deficiency Rickets
Definition and Background

科学实验室光屏障说明书

科学实验室光屏障说明书

3B SCIENTIFIC ®PHYSICS1Light barrier U11365Instruction sheet01/10 Hh/5700121. Safety instructions•When using the equipment in conjunction with a laser source, strictly observe the stipulated safety regulations.•Never look directly into the laser beam.2. Scope of delivery1 Light barrier1 Stand rod, length: 120 mm1 8-pin mini DIN connection cable, length: 1 m 1 Knurled screw M6x13. DescriptionThe light barrier can be used in two operating modes.1. Internal light barrier mode: light barrier with an infrared light source and an infra-red detector with a very short signal delay for measuring time inter-vals with moving bodies, e.g. during free fall, in airtrack experiments and for pendulum oscillations, as well as for counting pulses.2. Laser light barrier mode: laser diode detector built in at the side for setting up a wide-range barrier along with a laser pointer, e.g. during sport-ing events.The light barrier is equipped with a built-in LED function display: beam broken = 1 (TTL high). When disabled or when the beam is interrupted, the LED function display comes on.The narrow barrier arm in front of the infra-red source includes a sliding mechanical shutter that is used for disabling internal light-barrier mode and activating laser light -barrier mode.4. Technical dataSeparation of prongs: 82 mm Rise time: 60 ns Spatial resolution: < 1 mm Time resolution:10 µs3B Scientific GmbH • Rudorffweg 8 • 21031 Hamburg • Germany • Subject to technical amendments© Copyright 2010 3B Scientific GmbH5. Operation•Screw onto the stand rod using the arm at-tached to the thinner of the two prongs of the barrier and the M6 nut provided for this pur-pose.•Insert the mini DIN cable into the mini DIN connector on the broader prong of the barrier and connect it to the 3B NET log TM interface U11300 or to digital counter U210051.•Activate internal light barrier mode by opening the mechanical shutter. Subsequently, mount and focus the device for the intended applica-tion.•Activate laser light barrier mode by closing the mechanical shutter and (roughly) focus the la-ser light source onto the opening at the side of the light barrier. To achieve this, mirrors may be used to deflect the laser beam. Make fine adjustments to the light barrier.6. ApplicationsDetermining the position, velocity and acceleration of moving bodiesDetermining the acceleration due to gravity g in free fall experimentsMeasuring periods of oscillating bodies7. Sample experimentDetermining acceleration due to gravity g using picket fence U11366 Required apparatus:1 3B NET log TMU11300 1 Light barrier U11365 1 Picket fence U11366 1 Stand base U13270 1 Steel rod, length: 750 mm U15003 1 Universal clamp U13255 (1 Foam rubber sheet, approx. 20 x 20 cm)• Use the stand apparatus to fix the light barrierat a suitable height above ground level or at the edge of a table. If necessary, place a cush-ioning surface (e.g. foam rubber sheet) along the point of impact.• Select the digital input of the 3B NET log TMinter-face and load the free-fall experiment (tem-plate) from the 3B NET labTM software. All thenecessary settings required for evaluation are provided by this software.•Conduct the experiment and analyse yourresults.Fig. 1: Measuring free fallFig. 2: Distance against timeFig. 3: Fall velocity against time。

光电信息专业英语

光电信息专业英语

⏹Light detectors(光探测器)⏹Light can be detected by the eye. The eye is not suitable for modern fiber眼睛可以探测到光。

但是眼睛不适合用在现在的光线通信上因为它的反应太慢了。

communications because its response is too slow, its sensitivity to low-level signals is它的敏感度对于低频信号来说太不足了,而且对于电子接收器进行调幅解码还有其他信号处理也不是很简单。

inadequate, and it is not easily connected to electronic receivers for amplification,decoding, or other signal processing. Furthermore, the spectral response of the eye is而且眼睛的光谱响应仅限于0.4和0.7UM 之间的波长,而这也正是光损失最多的波长。

limited to wavelengths between 0.4 and 0.7 u m, where fibers have high loss.Nonetheless, the eye is very useful when fibers are tested with visible light. Break and虽然如此,眼睛在用光纤探测可见光时是非常有用的。

终止和打断能够通过观察散射的光观察到discontinuities can be observed by viewing the scattered light.⏹System, such as couplers and connectors, can be visually aligned with the visiblesource before the infrared emitter is attached. The remainder of this chapter is confined to an investigation of devices that directly convert optic radiation to electrical signals (either current or voltage) and that respond quickly to changes in the optic power level.⏹Principles of Photodetection⏹We will look at two distinct photodetection mechanisms. The first is the externalphotoelectric effect, in which electrons are freed from the surface of a metal by the energy absorbed from an incident stream of photons. The vacuum photodiode and the photomultiplier tube are based on this effect. A second group of detectors are semiconductor junction devices in which free charge carriers (electrons and holes) are generated by absorption of incoming photons. This mechanism is sometimes called the internal photoelectric effect.⏹hree common devices using this phenomenon are the pn junction photodiode, the最常用的应用这个现象的手段是pn节光电二极管,pin二极管,还有雪崩二极管PIN photodiode, and the avalanche photodiode.⏹Important detector properties are responsivity, spectral response, and rise time. The重要的探测要素有敏感度,光谱响应,还有回升时间。

BIOLASE Whitening Handpiece 使用说明书

BIOLASE Whitening Handpiece 使用说明书

IntroductionThe BIOLASE® Whitening Handpiece is intended for useby dentists in conjunction with a BIOLASE Diode Laserand LaserWhite20™ Whitening Gel for tooth whitening/bleaching procedures. The use of this system requiresproper clinical and technical training. This manual providesinstructions for professionals that have completed theappropriate training. When used and maintained properly,the tooth whitening system will prove a valuable addition toyour practice. Please contact your authorized representativeif you have any questions or require assistance.Whitening Handpiece for use with BIOLASE Diode LasersSection 1: SafetyPrecautionsFailure to comply with precautions and warnings described herein may lead to exposure to optical radiation sources. Please comply with all safety instructions and warnings.Safety InstructionsFollow these safety instructions before and during treatments:• All operatory entrances must be marked with an appropriate warning sign.•Do not operate in the presence of explosive or flammable materials.• Do not look directly into the beam or at specular reflections.• Never direct or point the beam at anyone’s eyes.• Make sure the laser is on STANDBY (Control button) before turning off the unit or removing the handpiece.• Move the circuit breaker (located on rear panel) to OFF (0) position before leaving the laser unattended.Section 2: Installation2) To disconnect, press both buttons at the base of the shaft, and pull the handpiece.3) The handpiece is equipped with disposable protective shields for use during bleaching procedures.4) Place a disposable shield over the handpiece’s arch, dispose of after single use.Section 3: OperationThe Whitening Handpiece with its arched mouth piece is designed to evenly apply laser power across four to five teeth at once.For detailed operating instructions please refer to the appropriate BIOLASE diode laser user manual.Settings1) Turn the laser on and select the WHITENING procedure category2) Please use the pre-set recommended settings shown on your BIOLASE diode laser system display.Tooth Whitening Procedure1) Carefully review all instructions included with every LaserWhite20 Whitening Gel Kit before proceeding with this treatment. Section 4: Warnings and Precautions EyewearDoctor, patient, assistant and all others inside the operatory must wear appropriate laser eyewear protection for the diode laser wavelength of 940±10 nm.Teeth WhiteningThe Whitening system is designed only for use with the BIOLASE LaserWhite20 Whitening Gel. Do not use this system with any other whitening gels. Using the system with other gels may result in adverse effects to the patient.Whitening Handpiece for use with BIOLASE Diode Lasers (Continued)Section 5: Clinical ApplicationsThe BIOLASE tooth whitening system is intended for laser-assisted whitening/bleaching of teeth.BIOLASE assumes no responsibility for parameters, techniques, methods or results. Physicians must use their own clinical judgment and professionalism in determining all aspects of treatment, technique, proper power settings, interval, duration, etc.Section 6: MaintenanceDisinfection of the Whitening HandpieceThe BIOLASE diode laser Whitening Handpiece requires disinfection before and after each patient use.• To clean and disinfect the Whitening Handpiece, wipe the entire surface of the handpiece with cotton gauze and isopropyl alcohol or a mild chemical disinfectant.• The handpiece is equipped with disposable protective covers (sold separately) which are intended for one time use only to prevent cross-contamination.Inspection of the BIOLASE diode laser shaft• Visually inspect the optic window located on the BIOLASE diode laser shaft for cleanliness.• To clean the window, use a lint-free cotton tip and isopropyl alcohol to gently remove contaminants or debris.Section 7: Package ContentsContents of the BIOLASE diode laser Whitening Handpiece package:• BIOLASE diode laser Whitening Handpiece• Five(5) protective shields• BIOLASE diode laser Whitening Handpiece Instructions for Use Replenishment Item Numbers• 6400180 Disposable Shields for Whitening Handpiece (pack of 30)• 7400030 LaserWhite20 Whitening Gel Kit (pack of 5)• 7400063 LaserWhite20 Whitening Gel Kit (pack of 5, Canada Only)• 7400022 BIOLASE Diode Laser Whitening Handpiece Limited WarrantyFor warranty information, refer to separate equipment warranty. Limited LiabilityBIOLASE, Inc. will not be liable for incidental, consequential, indirect or special damages of any kind including, but not limited to, damages for loss of revenue, loss of business or business opportunity or other similar financial loss arising out of or in connection with the performance, use or interrupted use of the BIOLASE diode laser system(s) or any BIOLASE materials.BIOLASE, Inc.27042 Towne Centre Drive, Suite 270 Foothill Ranch, CA 92610-2811 USA 949.361.1200888.424.6527 M T Promedt Consulting GmbHAltenhofstrasse 80D-66386 St. Ingbert/Germany+49 6894 581020P/N 5400122 Rev. L。

蓝光伤眼的英语阅读

蓝光伤眼的英语阅读

The Impact of Blue Light on Eye HealthIn recent years, with the widespread use of digital devices such as smartphones, tablets, and computers, concerns about the potential harm caused by blue light on eye health have become more prominent. In this reading, we will explore the effects of blue light on the eyes and discuss preventive measures to mitigate its impact.**1. Understanding Blue Light:**Blue light is a high-energy, short-wavelength light that is part of the visible light spectrum. It is emitted by the sun, LED lighting, and electronic devices. While exposure to natural blue light during the day is essential for regulating our circadian rhythm and promoting wakefulness, prolonged exposure to artificial sources, especially during the evening, can have adverse effects on eye health.**2. Effects of Blue Light on Eyes:****2.1. Digital Eye Strain:**Prolonged exposure to digital screens, which emit a significant amount of blue light, can lead to digital eye strain. Symptoms may include dry eyes, blurred vision, headaches, and difficulty focusing.**2.2. Disruption of Sleep Patterns:**Blue light exposure, particularly in the evening, can interfere with the body's production of melatonin, a hormone that regulates sleep. This disruption may lead to difficulty falling asleep and negatively impact the quality of sleep.**2.3. Potential Retinal Damage:**Some studies suggest that extended exposure to blue light may contribute to retinal damage over time. This has raised concerns about the potential long-term impact on vision.**3. Preventive Measures:****3.1. Use Blue Light Filters:**Many electronic devices and computer screens now offer blue light filters or night mode settings. Activating these features can reduce the amount of blue light emitted, especially during the evening hours.**3.2. Take Regular Breaks:**To alleviate digital eye strain, follow the 20-20-20 rule. Every 20 minutes, look at something 20 feet away for at least 20 seconds. This helps reduce eye fatigue associated with prolonged screen time.**3.3. Adjust Screen Brightness:**Adjusting the brightness of your device's screen can also be beneficial. Lowering the brightness, especially during low-light conditions, can minimize the impact of blue light on the eyes.**3.4. Limit Screen Time Before Bed:**To improve sleep quality, reduce screen time at least an hour before bedtime. This allows the body to naturally produce melatonin and prepares it for a restful sleep.**4. Ongoing Research:**While the impact of blue light on eye health is a topic of concern, ongoing research aims to deepen our understanding of its effects. Scientists are exploring ways to develop technologies and strategies that balance the benefits of technology with potential health risks.**5. Conclusion:**In conclusion, while blue light is a natural component of sunlight with essential benefits, overexposure to artificial sources, especially from digital devices, can pose risks to eye health. By adopting preventive measures and staying informed about ongoing research, individuals can make informed decisions to protect their eyes and maintain overall well-being in our technology-driven world.。

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Spectrochimica Acta Part B 57(2002)137–1460584-8547/02/$-see front matter ᮊ2002Elsevier Science B.V .All rights reserved.PII:S0584-8547(01)00359-7Diode laser-aided diagnostics of a low-pressure dielectric barrier discharge applied in element-selective detection of molecularspeciesK.Kunze ,M.Miclea ,G.Musa ,J.Franzke ,C.Vadla ,K.Niemax *a ab ac a ,Institute of Spectrochemistry and Applied Spectroscopy (ISAS ),Bunsen-Kirchoff-Strasse 11,44139Dortmund,GermanyaNational Institute for Laser,Plasma and Radiation Physics,76900Bucharest-Marguele,RomaniabInstitute of Physics,Bijenicka 46,HR-10000,Zagreb,CroatiacReceived 16July 2001;accepted 18September 2001AbstractA small,low-pressure dielectric barrier discharge used as a detector for the analysis of halogenated hydrocarbons was studied by diode laser absorption spectroscopy of excited plasma atoms.The distribution,as well as diffusion of the excited atoms,was measured with high spatialand temporalresol ution.The major part of the excited atoms was found in a very narrow discharge volume,where the maximum gas temperature and electron density,determined from broadening of the absorption line profiles,were approximately 1000K and greater than 10cm ,respectively.15y 3ᮊ2002Elsevier Science B.V .All rights reserved.Keywords:Dielectric barrier discharge;Diode laser absorption spectrometry;Plasma diagnostics;Halogenated hydrocarbons1.IntroductionWe recently reported on the application of a small,low-pressure dielectric barrier discharge (DBD )for the analysis of CCl F ,CClF and 223CHClF by diode-laser atomic absorption spec-2trometry (DLAAS )of chlorine and fluorine w 1x .It was demonstrated that the analytical figures of merit of DLAAS in a DBD are comparable with data obtained using microwave-induced plasmas (MIP ),although the DBD was operated at much lower power (-1W )than for MIPs.It was particularly surprising that the DBD was found to*Corresponding author.Fax:q 49-231-1392-310.E-mail address:niemax@isas-dortmund.de (K.Niemax ).be very efficient for dissociation of the halogenated hydrocarbons.The present paper is devoted to plasma diagnos-tics of the low-pressure DBD.This is a challenging task,since the electrode distance of the discharge is very small (1mm )and the processes in the AC plasma are highly transient.Although DBDs close to atmospheric pressure are widely used,for exam-ple,in flat-panel plasma displays for color TV screens w 2x or for industrialproduction of ozone w 3x ,the plasma processes are yet not fully under-stood.There are only a few papers on the plasma diagnostics of atmospheric DBDs,but to the best of our knowledge,there are no detailed investiga-tions on low-pressure DBDs,such as those used for the analysis of halogenated hydrocarbons.138K.Kunze et al./Spectrochimica Acta Part B 57(2002)137–146Fig.1.Experimental arrangement for diode laser absorption measurements of high spatial resolution.Diode-laser absorption spectroscopy was used for plasma diagnostics of an argon DBD.The measurements were performed with high spatial and temporalresol ution (40m m and 10ns,respec-tively ).They provided not only the excited-state distribution of short-and long-lived Ar atoms and the diffusion of the metastable atoms,but also the gas temperature and electron density from the analysis of Doppler and Lorentzian line broadening.2.ExperimentalThe DBD is the same as was used in our experiment on the analysis of CCl F ,CClF and 223CHClF by DLAAS w 1x .The DBD was generated 2between two glass plates,each with 50mm long and 0.8mm wide aluminum electrodes covered by a 20m m thick glass layer.The distance between the electrodes,including the dielectric layers,was 1mm (Fig.1).The DBD device was operated in an argon atmosphere at pressures between 10and 50mbar with gas flow-rates between 50and 500ml y min.The discharge was sustained by rectan-gular AC-voltage of 750V with a frequency of pp 5kHz and rise times of approximately 2m s.The half-widths of the current pulses were approxi-mately 10m s.During the pulses,the plasma filled the whole volume between the electrodes.A more detailed description of the experimental arrange-ment can be found in w 1x .Absorption measurements were performed with a single-mode laser diode (Sharp LTO16MDO;line width,approx.45fm )tuned to either the 800.836or the 801.699nm argon line belonging to the 1s ™2p and 1s ™2p transitions,respec-4658tively,providing the time-dependent optical depths K (t )s ln w I y I (t )x ,where I is the incident and I (t )00the transmitted laser intensity.Typical transient signals I (t ),together with the current pulse of the discharge,are shown in Fig.2.The opticaldepths are proportionalto the concentrations of the argon atoms,either in the resonant 1s or the metastable 41s state.Investigations of the spatialatomic dis-5tribution in the small plasma layer between the electrodes require a spatial resolution of better than 100m m.For this purpose,we used an optical arrangement that is shown in Fig.1.The widened beam of the laser diode,directed through the discharge zone parallel to the DBD glass plates and expanded by a lens (f s 16cm ),fell on a screen with a pinhole (diameter 0.2mm ).The intensity of the laser light passing through the pinhole was detected by a photo-multiplier (Hama-matsu ).The distance between the lens and screen was 1m.With this arrangement,it was possible to measure the absorption of a plasma volume with a diameter of approximately 40m m parallel to the DBD glass plates.A similar optical arrange-ment,using a hollow cathode as a light source,was already presented in w 4x .The absorption signals were measured stepwise by moving the screen with the pinhole in the direction perpendicular (x direction )and parallel (y direction )to the DBD glass plates.In this way,the time-dependent spatialabsorption distributions K (x ,y ,t )with a spatialresol ution of 40=40m m in the x –y plane were obtained.The measurements139K.Kunze et al./Spectrochimica Acta Part B 57(2002)137–146Fig.2.Discharge current and absorption signals obtained for Ar atoms in the resonance state near to one electrode.were performed for two orientations of the DBD with respect to the observation axis (z -axis ).In the first case,the plasma column was orientated perpendicular to the observation axis (side-on measurements ),whereas in the second case,the plasma column was orientated parallel to the obser-vation axis (end-on measurements ).3.Time-dependent and spatial distributions of excited plasma atomsIn the case of side-on measurements,the length of the absorbing layer was approximately 1mm long and the absorption lines were optically thin,with maximum opticaldepths of approximatel y 0.06and 0.28for the 800.836and 801.699nm lines,respectively.The optical depths K and K ,r m related to the argon atoms excited to the resonance and metastable state,respectively,were strongly dependent on the position x between the electrodes,while they were constant along the plasma column.The opticaldepths K (x ,y s 0,t )and K (x ,y s r m 0,t )measured for one full discharge cycle at an argon pressure of 20mbar are shown in Fig.3.In each half-period,the absorption shows a maximum located at approximately 300m m from one of the electrodes,which is identified as the temporary cathode.At this position,the highest concentra-tions of Ar atoms in their resonance and metastable state appear at approximately 12and 17m s,respectively,after the polarity changes.The differ-ent delays are obviously due to different excitation mechanisms for the 1s and 1s states.The reso-45nance state is populated by electron impact and recombination and relaxation processes,while only recombination and relaxation are important for the metastable state.Furthermore,it is evident in Fig.3that the concentration of metastable atoms decreases much more slowly than the concentration of atoms in the resonance state.This is a conse-quence of the different lifetimes.The natural life-time of the Ar 1s resonance state is 7.9ns w 5x ,4while it is 55.9s for the metastable 1s state w 6x .5However,the actual lifetimes greatly vary from the naturall ifetimes under the experimentalcon-ditions chosen.Radiation trapping of the argon resonance line increases the actual lifetime of the resonance state,while the lifetime of the metasta-140K.Kunze et al./Spectrochimica Acta Part B 57(2002)137–146Fig.3.Time dependence of the peak absorption of Ar measured side-on at different positions between the electrodes (pressure 20mbar,gas flow 200ml y min,K s ln w I y I (t )x ;left,Ar in the resonance state;right,Ar in the metastable state ).0ble state is mainly reduced by quenching processes on the near walls of the discharge.The lifetime t of the resonance state can be estimated using the Holstein formula w 7x t y t s 1.15=(l y 3p d ),21y 20r where l is the wavelength of the argon resonance r line (106.666nm ),d represents the size of the optically active volume in the form of a thin slab (in our case,d f 1mm ),and t is the natural 0lifetime.The value calculated of t f 4m s is in agreement with the experimentaldata obtained by fitting the transient signals to an exponential decay.The actual lifetime of the metastable atoms (approx.0.1ms )is still significantly larger than that of the resonance state.The end-on measurements of K (t )were per-r formed at various argon pressures and in both vertical (x )and horizontal (y )directions.Fig.4shows K (x ,y s 0,t )measured at two argon pres-r sures (10and 50mbar )between the electrodes.The distance between the temporary cathode and the absorption maximum is pressure-dependent.It is approximately 400and 200m m for 10and 50mbar,respectively.This behavior is similar to the situation in a glow discharge,where the negative glow is shifted towards the cathode if the pressure increases.Furthermore,Fig.4shows that the absorption maximum is shifted towards the tem-porary anode after the discharge current has peaked.This effect should be due to excitation processes caused by a much weaker second dis-charge maximum at 37m s,which is barely evident in Fig.2.In order to determine the plasma distribution outside the region between the electrodes,K (x ,y ,t )was measured.As indicated,the data r max were taken at the x -position where the highest concentrations were detected at 10and 50mbar.The results are displayed in Fig.5.As already observed in Fig.4,the concentration of excited atoms depends on the pressure,and at lower pressure,the distributions are broader.However,the excited atoms are mostly confined to the region between the electrodes.Therefore,the shift of the absorption maximum in the x -direction cannot be caused by the diffusion of atoms.On the other hand,the excited atoms outside the electrode region indicate the extension of the plasma at lower pressures,i.e.the diffusion of free electrons in the y -direction.4.Plasma diagnosticsThe results presented in the previous section show that excited atoms are mainly generated in a very thin layer near the temporary cathode.There-fore,the time-dependent and spatially non-homo-geneous discharge is a rather challenging system for plasma diagnostics of the gas temperature and the electron density.These data were obtained by analysis of the absorption profile of the Ar 800.836141K.Kunze et al./Spectrochimica Acta Part B 57(2002)137–146Fig.4.Time dependence of the opticaldepth K of the 800.836nm Ar line measured end-on at different positions between the r electrodes at 10(left )and 50mbar (right ).Fig.5.Time dependence of the opticaldepth K of the 800.836nm Ar line measured end-on at the positions of the highest population r density at 10(left )and 50mbar (right ).nm line measured end-on at the position of highest concentration (x ).The opticaldepth K (x ,y s max r max 0,t )was measured by tuning the laser stepwise in the wavelength region between y 15and q 15pm around the line center at l .In this way a set of 0data for K (t )with the laser detuning parameter,r Dl s l y l ,was measured.Typicalresul ts 0obtained for three different laser detunings are shown in Fig.6.Taking into account the complete data set,the absorption profile K (Dl )at particular r times can be constructed,as shown in the inset of Fig.6.At this point,it should be noted that the line profiles may be affected by interference effects in the observation plane if the laser beam is not sufficiently spatially filtered.In this case,the variation of the refractive index within the line profile may cause asymmetries in the absorption line measured.Blue,as well as red,asymmetries may be observed.This effect can be very pro-142K.Kunze et al./Spectrochimica Acta Part B 57(2002)137–146Fig.6.Procedure for the construction of the 800.836nm Ar line profiles at different times (for details see text ).nounced if the opticaldepths in the l ine centers are greater than 2.The measurements were performed in the line kernel,where the line profile is generally deter-mined by Doppler and impact broadening and can be analytically described by Gaussian and Loren-tzian functions,respectively w 8x .The profiles measured for K (Dl )are of the Voigt type,i.e.the r convolutions of Gaussian and Lorentzian profiles.The shape of the Voigt profile depends on the parameters w and w ,which represent the full G L widths at half-maximum (half-widths )of the Gaus-sian and Lorentzian contributions,respectively.The half-width w of the Voigt profile is related V to w and w according to w 9x :G L 1y 222.Ž.xŽw s w w q w y 2q w y 2(1)V G L L The half-width w of a Gaussian profile gives G information on the gas temperature T :a 1y 2..w s Ž2l y c Ž2RT ln2y M (2)G 0a a where R is the universalgas constant and M the a mass of the absorbing atoms.On the other hand,the half-width w of the Lorentzian profile is givenL by the sum of particular broadening contributions.In DBD,the main contributions are due to inter-actions between the optically active atoms and the ground-state argon atoms (pressure broadening )and electrons (Stark broadening ).Therefore,the actualLorentzian hal f-width is of the form w s L w q w .w s g N ,where g is the gas press Stark pressL L L a a a temperature-dependent broadening parameter andN the argon density.The Stark-width w is a Starka L complex function of the electron temperature T e and the electron density N .The data for g and e a w can be found in w 10x and w 11x ,respectively.Stark L In order to extract w and w from the absorp-G L tion coefficients measured,we used a standard method which is based on the fact that the nor-malized Voigt profiles P (Dl )have Lorentzian V wings:2Ž.Ž.P Dl ;Ž1y 2p .w y Dl (3)V L if ±(Dl )±4(w y 2).Then,w can be derived from V L the profile measured for K (Dl )applying:r 2Ž.Ž.Ž.w s 2p Dl K Dl y K Dl d l(4)L r r |143K.Kunze et al./Spectrochimica Acta Part B 57(2002)137–146Fig.7.Time dependence of the Gaussian half-widths w obtained by analysis of the line profiles measured (upper graph ).The G corresponding gas temperature dependence on time (lower part ).The measurements were performed at the position of highest concentration of Ar atoms in the resonance state (near the temporary cathode ).Taking into account the experimental w and L w ,the corresponding values for w were calcu-V G lated via Eq.(1).The time-dependent Gaussian half-widths are plotted in Fig.7.The data represent the widths measured in the volume of highest population density (at x ).Furthermore,the values calculat-max ed for the gas temperature are also displayed in Fig.7.At the time of maximum excitation,the gas temperature is approximately 1000K.The gas then cools down to room temperature within 10m s.During the remaining time of the discharge cycle,the temperature stays constant within the limits of experimental uncertainty,even during the period when the polarity has changed and the second,weaker excitation maximum can be observed.The time dependence of the Lorentzian width w ,displayed in Fig.8,qualitatively shows similar L behavior to the Gaussian width.With the exception of the time of the first discharge maximum,w is L constant during the whole discharge cycle (w f 1.7pm ).Taking into account the experimen-L talerror bars,this room-temperature val ue of w L agrees well with the values for pressure-broadening w derived from w 10x .The contribution of pres-press L sure broadening to w for the ‘hot’discharge L period (see Fig.8)was calculated taking into account the reduced number density in the dis-charge volume probed (application of Dalton’s law )and the typicaltemperature dependence (A T )of the pressure-broadening parameter.The 0.3difference between the values measured for w Land the w data calculated yields the contribu-pressL tion of Stark broadening (w )to the measuredStark L half-width w .The Stark widths w are plotted StarkL L in Fig.9.Outside the ‘hot’discharge period,the w data cannot be evaluated,since the experi-Stark L mentalerror bars are too l arge.The calculation of the electron density from w requires the electron temperature.Unfortu-Stark L nately,the electron temperatures could not be determined within the scope of the present work.However,taking into account the experimental conditions,the electron temperature should be in the range 10000–300000K.The lower limit of 10000K corresponds to the excitation temperature of the resonance and the metastable argon states obtained from the excited to ground-state argon atoms density ratio,while the upper limit is related144K.Kunze et al./Spectrochimica Acta Part B 57(2002)137–146Fig.8.Time dependence of the Lorentzian half-width of the argon line at 800.836nm measured at the position of highest concen-tration of Ar atoms in the resonance state (near the temporary cathode ).Furthermore,the contribution from pressure broadening w (with upper and lower error bar )is shown.See text for further details.press L to the maximum kinetic energy the electrons can accumulate on the average free path in the electric field applied.Nevertheless,this large uncertainty in the experimentalel ectron temperature does not affect the uncertainty of the electron density to the same extent.The inset in Fig.9shows w in relation to StarkL N and T obtained by use of theoreticalresul ts e e published in w 11x .The Stark broadening parame-ters in w 11x were calculated for electron tempera-tures in the range between 2500and 80000K.The dashed curve (T s 320000K )in the inset of e Fig.9is an extrapolation of the theoretical results.Taking into account the experimentalerror bars and the uncertainty in T ,the data in Fig.9showe that the largest value of w corresponds to an StarkL electron density in the range 1–3=10cm .15y 3Taking into account the maximum electron den-sity of 1–3=10cm and the Ar number density 15y 3of about 1.5=10cm at 20mbar and 1000K 17y 3derived from the idealgas equation,approximatel y 1%of all Ar atoms are ionized.The number density of the Ar atoms N in the metastable andAr*resonance states can be calculated from the Lad-enburg equation:2p e 2.K d l s ln ŽI y I d l s l L f N (5)*l 0l 0Ar ||2mctaking into account the side-on measured optical depths K of the 801.699and 800.836nm lines,l respectively,at the time and position of maximum absorption (see Fig.3),the approximate absorption length for side-on measurements (L s 1mm ),and the oscillator strength f of the transitions w 5x .The maximum number density values were found to be N f 1=10and N f 2=10cm .1312y 3meta res 5.ConclusionHigh spatial-resolution plasma diagnostics of low-pressure DBD diode-laser absorption spectros-copy gave clear evidence for a thin,short-lived plasma layer of approximately 40m m in thickness and 1mm in width near the temporary cathode.In this layer,plasma atoms are highly efficiently excited,the gas temperature reaches approximately145K.Kunze et al./Spectrochimica Acta Part B 57(2002)137–146Fig.9.Time dependence of the Stark width of the 800.836nm line obtained from the data shown in Fig.8.Inset shows theoreticalvalues of w dependent on electron density within the range given by the possible minimum and maximum electron temperatures,StarkL 10000and 320000K,respectively.1000K and electron density of greater than 1015cm can be found.In all other areas,the excita-y 3tion is much less efficient,the gas temperature is near room temperature,and the electron density is below 10cm .This means that most of the 14y 3electrical power is used to heat a very small plasma volume.Despite the fact that the average power of the DBD is small (F 0.1W ),in this volume the plasma should have an efficient dissociation capability not only for halogenated hydrocarbon,as shown in w 1x ,but also for larger molecules,at least for the main discharge period of approxi-mately 10m s.Preliminary diode-laser absorption measure-ments of excited chlorine in the low-pressure DBD filled with argon and small concentrations of chlo-rinated hydrocarbons revealed the same spatial distribution as found for excited Ar.As a conse-quence,the measurements of halogenated hydro-carbons by diode-laser absorption spectroscopy of excited chlorine or fluorine as reported in w 1x can be significantly improved.In the former experi-ment,the diode laser beam filled the whole spacebetween the electrodes.The main absorption,how-ever,was obviously only due to the small layers near the temporary cathodes.Approximate esti-mates give an improvement in the detection limit of at least one order of magnitude in comparison to the former experiment if absorption measure-ments are only restricted to the small area of the plasma layer near the cathodes.Such measure-ments are now being performed in our laboratory.Furthermore,it is interesting to study the dissoci-ation of molecules in the DBD with high spatial resolution.Such investigation should help to answer the question of whether the DBD is also suitable for dissociation and element-selective detection of larger molecules than halogenated hydrocarbons.AcknowledgementsThe authors gratefully acknowledge financial support by the Deutsche Forschungsgemeinschaft.146K.Kunze et al./Spectrochimica Acta Part B57(2002)137–146Referencesw1x M.Miclea,K.Kunze,G.Musa,J.Franzke,K.Niemax, Spectrochim.Acta Part B56(2001)37–43.w2x T.N.Criscimagna,P.Pleshko,in:J.I.Pankove(Ed.), Topics in Applied Physics,40,Springer Verlag,New Y ork,1980,pp.91–150.w3x B.Eliasson,U.Kogelschatz,IEEE.Trans.Plasma.Sci.19(1991)309–323.w4x V.Vadla,M.Movre,R.Beuc,J.Franzke,H.-D.Wize-mann,K.Niemax,Spectrochim.Acta Part B55(2000) 1759–1769.w5x P.L.Smith,C Heise,J.R.Esmond,R.L.Kurucz,Atomic spectrall ine database,in:R.L.Kurucz,CD-Rom23,http:y y y amdata y ampdata ykurucz23y sekur.html.w6x N.E.Small-Waren, C.C.Lue-Yung,Phys.Rev.A11 (1975)1777–1783.w7x T.Holstein,Phys.Rev.83(1951)1159–1168.w8x A.Unsold,Physik der Sternatmospharen,Springer Ver-¨¨lag,Berlin,1968.w9x G.W.F.Drake,Atomic,Molecular and Optical Physics Handbook,AID Press,Woodbury,NY,1966,p.698.w10x 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