MMBTSB1689W中文资料
W78E58B中文资料
8? ? ? ?ቤተ መጻሕፍቲ ባይዱ?
目 录：
1. 概述.................................................................................................................................. 3 ２． 特性.................................................................................................................................. 3 ３． 管脚配置........................................................................................................................... 4 ４． 管脚描述........................................................................................................................... 5 ５． 方块图 .............................................................................................................................. 7 ６． 功能描述........................................................................................................................... 8
MMBTRC244SS中文资料
o
C
50 30
T
10 5 3
Ta=25 C o Ta=-25 C
o
0 10 a=
o
C
10 5 3
Ta=25 C o Ta=-25 C
o
1 1 3 10 30 100 300 1K OUTPUT CURRENT Io (mA)
1 1 3 10 30 100 300 1K OUTPUT CURRENT Io (mA)
1)
Min. 33 39
TYP 200 -
Max. 10 0.3 3 3 3 3 3 3 7.2 3.8 1.8 0.88 7.2 3.6
Unit µA
IO(OFF)
GI
47 56 56 56
VO(ON)
0.5 0.3
V
VI(ON)
V
VI(OFF) fT
1)
V MHz
-
II
mA
Characteristic of Transistor Only
INPUT OFF VOLTAGE V I(OFF) (V)
G I - Io
300 MMBTRC243SS Vo=5.0V 100
DC CURRENT GAIN G I DC CURRENT GAIN G I
G I - Io
3K MMBTRC244SS Vo=5.0V 1K
50 30
o
0 =1 Ta
OUT TYPE NO. MMBTRC241SS IN R1 R2 MMBTRC242SS MMBTRC243SS MMBTRC244SS COMMON MMBTRC245SS MMBTRC246SS R1(KΩ) 1 2.2 4.7 10 1 2.2 R2(KΩ) 1 2.2 4.7 10 10 10
MMBT2907ALT1G中文资料
Symbol Min Max Unit
V(BR)CEO V(BR)CBO V(BR)EBO
ICEX ICBO
IBL
Vdc
−60
−
Vdc
−60
−
Vdc
−5.0
−
nAdc
−
−50
mAdc
− −0.010
−
−10
nAdc
−
−50
hFE
VCE(sat) VBE(sat)
−
75
−
100
−
100
−
100
300
50
元器件交易网
MMBT2907ALT1
General Purpose Transisters
PNP Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol 2907A
Unit
Collector −Emitter Voltage
COLLECTOR 3
1 BASE
2 EMITTER
MARKING
3
DIAGRAM
1 2
SOT−23 (TO−236AB)
CASE 318
STYLE 6
2F
M
2F M
= Device Code = Month Code
ORDERING INFORMATION
Device
Package
Shipping†
−
Vdc
−
−0.4
−
−1.6
Vdc
−
−1.3
−
MMBT4124LT1资料
© Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 11Publication Order Number:MMBT4124L T1/DMMBT4124LT1General Purpose Transistor NPN SiliconFeatures•Pb−Free Package is AvailableMAXIMUM RATINGSRating Symbol Value Unit Collector−Emitter Voltage V CEO25Vdc Collector−Base Voltage V CBO30Vdc Emitter−Base Voltage V EBO 5.0Vdc Collector Current − Continuous I C200mAdc THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitT otal Device DissipationFR−5 Board (Note 1) @T A = 25°C Derate above 25°C P D2251.8WmW/°CThermal Resistance, Junction−to−Ambient R q JA556°C/WT otal Device Dissipation Alumina Substrate (Note 2) @T A = 25°C Derate above 25°C PD3002.4WmW/°CThermal Resistance, Junction−to−Ambient R q JA417°C/W Junction and Storage T emperature T J, T stg−55 to +150°C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.FR−5 = 1.0 0.75 0.062 in.2.Alumina = 0.4 0.3 0.024 in. 99.5% alumina.SOT−23 (TO−236)CASE 318STYLE 6MARKING DIAGRAM3ZC M GGCOLLECTOR31BASE2EMITTER12Device Package ShippingORDERING INFORMATIONMMBT4124L T1SOT−233000 / T ape & ReelZC= Device CodeM= Date Code*G= Pb−Free PackageMMBT4124L T1G SOT−23(Pb−Free)3000 / T ape & Reel *Date Code orientation and/or overbar may varydepending upon manufacturing location.(Note: Microdot may be in either location)2ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSCollector−Emitter Breakdown Voltage (Note 3)(I C = 1.0 mAdc, I E = 0)V (BR)CEO 25−Vdc Collector−Base Breakdown Voltage (I C = 10 m Adc, I E = 0)V (BR)CBO 30−Vdc Emitter−Base Breakdown Voltage (I E = 10 m Adc, I C = 0)V (BR)EBO 5.0−Vdc Collector Cutoff Current (V CB = 20 Vdc, I E = 0)I CBO −50nAdc Emitter Cutoff Current (V EB = 3.0 Vdc, I C = 0)I EBO−50nAdcON CHARACTERISTICS DC Current Gain (Note 3)(I C = 2.0 mAdc, V CE = 1.0 Vdc)(I C = 50 mAdc, V CE = 1.0 Vdc)h FE12060360−−Collector−Emitter Saturation Voltage (Note 3)(I C = 50 mAdc, I B = 5.0 mAdc)V CE(sat)−0.3Vdc Base−Emitter Saturation Voltage (Note 3)(I C = 50 mAdc, I B = 5.0 mAdc)V BE(sat)−0.95VdcSMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product(I C = 10 mAdc, V CE = 20 Vdc, f = 100 MHz)f T 300−MHz Input Capacitance(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)C ibo −8.0pF Collector−Base Capacitance(I E = 0, V CB = 5.0 V, f = 1.0 MHz)C cb − 4.0pF Small−Signal Current Gain(I C = 2.0 mAdc, V CE = 10 Vdc, R S = 10 k W , f = 1.0 kHz)h fe 120480−Current Gain − High Frequency(I C = 10 mAdc, V CE = 20 Vdc, f = 100 MHz)(I C = 2.0 mAdc, V CE = 10 V, f = 1.0 kHz)|h fe |3.0120−480−Noise Figure(I C = 100 m Adc, V CE = 5.0 Vdc, R S = 1.0 k W , f = 1.0 kHz)NF−5.0dB3.Pulse T est: Pulse Width = 300 m s, Duty Cycle = 2.0%.Figure 1. Capacitance REVERSE BIAS VOLTAGE (VOLTS)2.03.05.07.0101.00.1Figure 2. Switching TimesI C , COLLECTOR CURRENT (mA)1.02.03.05.07.01020305070100200C A P A C I T A N C E (p F )1.02.03.0 5.07.0102030400.20.30.50.73Figure 3. Frequency Variations f, FREQUENCY (kHz)46810122Figure 4. Source ResistanceR S , SOURCE RESISTANCE (k W )N F , N O I S E F I G U R E (d B )0AUDIO SMALL−SIGNAL CHARACTERISTICSNOISE FIGURE (V CE = 5 Vdc, T A = 25°C)Bandwidth = 1.0 HzFigure 5. Current Gain I C , COLLECTOR CURRENT (mA)7010020030050Figure 6. Output AdmittanceI C , COLLECTOR CURRENT (mA)h , O U T P U T A D M I T T A N C E ( m h o s )Figure 7. Input ImpedanceI C , COLLECTOR CURRENT (mA)Figure 8. Voltage Feedback RatioI C , COLLECTOR CURRENT (mA)3010050510202.03.05.07.0101.00.10.21.02.0 5.00.5100.50.72.05.010201.00.20.5o e h , V O L T A G E F E E D B A C K R A T I O (X 10 )r e h i e 0.10.21.02.05.0100.50.10.21.02.0 5.0100.5210.10.21.02.05.0100.5m −4h PARAMETERS(V CE = 10 V, f = 1 kHz, T A = 25°C)h f e , C U R R E N T G A I N, I N P U T I M P E D A N C E (k )Ω4STATIC CHARACTERISTICS0.30.50.71.02.00.2h , D C C U R R E N T G A I N (N O R M A L I Z E D )0.1F E Figure 10. Collector Saturation RegionI B , BASE CURRENT (mA)0.40.60.81.00.20.1V , C O L L E C T O R E M I T T E R V O L T A G E (V O L T S)0.5 2.0 3.0100.20.301.00.7 5.07.0CE 0.070.050.030.020.01Figure 11. “On” Voltages I C , COLLECTOR CURRENT (mA)0.40.60.81.01.20.2Figure 12. Temperature CoefficientsI C , COLLECTOR CURRENT (mA)V , V O L T A G E (V O L T S )− 0.500.51.0− 1.0− 1.5− 2.0V , T E M P E R A T U R E C O E F F I C I E N T S (m V /C )°θPACKAGE DIMENSIONSSOT−23 (TO−236)CASE 318−08ISSUE AN*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting T echniques Reference Manual, SOLDERRM/D.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION。
MMBFJ175LT1G资料
© Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 31Publication Order Number:MMBFJ175LT1/DMMBFJ175LT1Preferred DeviceJFET ChopperP−Channel − DepletionFeatures•Pb−Free Package is AvailableMAXIMUM RATINGSRating Symbol Value Unit Drain−Gate Voltage V DG25V Reverse Gate−Source Voltage V GS(r)−25V THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR−5 Board, (Note 1) T A = 25°CDerate above 25°C P D2251.8mWmW/°CThermal Resistance, Junction−to−Ambient R q JA556°C/W Junction and Storage Temperature T J, T stg−55 to +150°C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.FR−5 = 1.0 x 0.75 x 0.062 in.ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICSGate−Source Breakdown Voltage(V DS = 0,I D = 1.0 m A)V(BR)GSS30−VGate Reverse Current(V DS = 0 V, V GS = 20 V)I GSS− 1.0nAGate−Source Cutoff Voltage(V DS = 15, I D = 10 nA)V GS(OFF) 3.0 6.0V ON CHARACTERISTICSZero Gate−Voltage Drain Current (Note 2) (V GS = 0, V DS = 15 V)IDSS7.060mADrain Cutoff Current(V DS = 15 V, V GS = 10 V)I D(off)− 1.0nADrain Source On Resistance(I D= 500 m A)r DS(on)−125WInput CapacitanceV DS = 0, V GS= 10V f = 1.0 MHz C iss−11pFReverse TransferCapacitanceC rss− 5.52.Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.SOT−23 (TO−236)CASE 318STYLE 10Device Package Shipping†ORDERING INFORMATIONMMBFJ175LT1SOT−233,000 / Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.MMBFJ175LT1G SOT−23(Pb−Free)3,000 / Tape & ReelPreferred devices are recommended choices for future use and best overall value.*Date Code orientation and/or overbar mayvary depending upon manufacturing location.16W M GG6W= Device CodeM= Date Code*G= Pb−Free Package(Note: Microdot may be in either location)MARKING DIAGRAMMMBFJ175LT1PACKAGE DIMENSIONSSOT−23 (TO−236)CASE 318−08ISSUE AN*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。
MMBT6429LT1中文资料
10 µA
30 µA
10 20 50 100 200 500 1k 2k 5k 10k 20k
50k 100k
f, FREQUENCY (Hz) Figure 4. Noise Current
NF, NOISE FIGURE (dB)
2.0
16 BANDWIDTH = 10 Hz to 15.7 kHz
Collector–Emitter Saturation Voltage (I C = 10 mAdc, I B = 0.5 mAdc) (I C = 100 mAdc, I B = 0.5 mAdc) Base–Emitter On Voltage (I C = 1.0 mAdc, V CE = 5.0mAdc)
Figure 1. Transistor Noise Model
M22–2/4
LESHAN RADIO COMPANY, LTD.
e n , NOISE VOLTAGE (nV)
I n , NOISE CURRENT (pA)
MMBT6428LT1 MMBT6429LT1
NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25°C) NOISE VOLTAGE
VCE(sat) V BE(on)
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product (V CE = 5.0 Vdc, I C = 1.0mAdc, f = 100 MHz) Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB= 0.5 Vdc, I C = 0 , f = 1.0 MHz)
MS-168W使用说明书
MS-168W使用说明书TAKSTAR 无线/有线两用台式会议麦克风，主要为会议、公众传播、户外演讲等场合而设计。
这套无线麦克风系统具有使用距离长、高保真音色、频率响应宽、极低的失真度和无线/有线自动切换等特点。
本系统的设计不需幻象电源供电，解决了传统的利用幻象电源和连线复杂的缺陷。
麦克风的鹅颈部分灵活多变的组合，能够满足不同场合的特殊需要。
麦克风采用电池供电，安装方便、操作简单。
既可单独使用，也可配合会议系统工程安装。
主要特性1.使用VHF 220-260MHz频段。
2.采用多级窄带滤波，充分消除干扰信号。
3.采用低电压供电。
4.全部采用石英晶体振荡，使频率更加稳定。
5.动态范围宽广。
6.设有声反馈防啸叫功能，能有效减小回授啸叫。
7.超强指向性。
8.外观流畅，安装方便，操作简单。
麦克风操作说明1.打开底座电池盖，按标示装好1.5V（5#）电池两节，注意电池不能装反。
2.打开电源开关，按下POWER钮，会议麦克风咪头部红色光环点亮，无线麦克风开始工作。
3.使用有线时，将卡侬线插入台式会议麦克风的输出插孔内，无线发射部分自动切换，并将卡侬线的另一端插入功放，有线开始工作。
4.若长期不使用时，请从底座内取出电池，以免电池漏液而损坏麦克风。
接收机操作说明1.将电源转换器插头插入供电插座，注意电源电压为AC 220V/50Hz。
2.打开电源开关，电源指示灯亮。
3.拉出天线，使之与机体成90°角。
4.将音频输出线插入音频输出座，另一端插入功放。
5.长期不使用时，请拔出电源转换器。
注意事项1.接收机的安装离地面要高于1m，距离墙面大于1m。
2.麦克风使用时，应避免放置到死角的地方，以保持信号接收状况良好。
3.机体应避免直接日晒雨淋，尽量远离电磁场。
4.会议台式麦克风电源供电为DC 3V电池供电，决不能使用幻象电源供电。
5.没有经过厂家授权同意，用户不得擅自对机体内做任何修改或变动，修改或擅自改系统内部配件，可能导致机器不能正常工作，并且可能使保修承诺作废。
MMBTA92,215;中文规格书,Datasheet资料
MMBTA92
UNIT K/W
MAX. −250 −100
UNIT nA nA
−500 −900 6 −
mV mV pF MHz
IC = −10 mA; VCE = −20 V; 50 f = 100 MHz
2004 Jan 163来自/Philips Semiconductors
2004 Jan 16
2
/
Philips Semiconductors
Product specification
PNP high-voltage transistor
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = −200 V IC = 0; VEB = −3 V VCE = −10 V; note 1 IC = −1 mA IC = −10 mA IC = −30 mA VCEsat VBEsat Cc fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency IC = −20 mA; IB = −2 mA IC = −20 mA; IB = −2 mA IE = ie = 0; VCB = −20 V; f = 1 MHz 25 40 25 − − − − − − − − MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500
MMBT5551中文资料_数据手册_参数
10
100
200
COLLECTOR CURRENT I (mA) C
C / C ——
ob
ib
V /V
CB
EB
C ib
f=1MHz
I =0 / I =0
E
C
T =25℃ a
C ob
COLLECTOR CURRENT I (mA) C
TRANSITION FREQUENCY f (MHz) T
1
0.2
0.4
180 160
6 600 300 416 150 -55～+150
Unit V V V mA
mW ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage Collector-emitter breakdown voltage
C,Mar,2013
Typical Characteristics
MMBT5551
COLLECTOR CURRENT I (mA) C
Static Characteristic
18
90uA
COMMON
EMITTER
15
80uA T =25℃
a
70uA
12
60uA
50uA
9
40uA
6
30uA
I =20uA
IEBO hFE(1) * hFE(2) * hFE(3) * VCE(sat)1* VCE(sat)2* VBE(sat)1* VBE(sat)2*
MMBTA06LT3G;MMBTA06LT1G;MMBTA05LT1G;MMBTA05LT3G;MMBTA05LT1;中文规格书,Datasheet资料
MMBTA05L, MMBTA06L, SMMBTA06LDriver TransistorsNPN SiliconFeatures•S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CompliantMAXIMUM RATINGSRating Symbol Value UnitCollector−Emitter VoltageMMBTA05LT1 MMBTA06LT1, SMMBTA06LT1V CEO6080VdcCollector−Base VoltageMMBTA05LT1 MMBTA06LT1, SMMBTA06LT1V CBO6080VdcEmitter−Base Voltage V EBO 4.0Vdc Collector Current − Continuous I C500mAdc Electrostatic Discharge ESD HBM Class 3BMM Class CCDM Class IV THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR−5 Board (Note 1) T A = 25°C Derate above 25°C P D2251.8mWmW/°CThermal Resistance, Junction−to−Ambient R qJA556°C/WTotal Device Dissipation Alumina Substrate, (Note 2) T A = 25°C Derate above 25°C P D3002.4mWmW/°CThermal Resistance, Junction−to−Ambient R q JA417°C/WJunction and Storage Temperature T J, Tstg−55 to +150°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.FR−5 = 1.0 0.75 0.062 in.2.Alumina = 0.4 0.3 0.024 in. 99.5% alumina.SOT−23CASE 318STYLE 6MARKING DIAGRAMS1H M GGMMBTA05LT1COLLECTOR1EMITTER1GM M GGMMBTA06LT1,SMMBTA06L1H, 1GM= Specific Device CodeM= Date Code*G= Pb−Free PackageSee detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.ORDERING INFORMATION(Note: Microdot may be in either location)*Date Code orientation and/or overbar mayvary depending upon manufacturing location.ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSCollector −Emitter Breakdown Voltage (Note 3)(I C = 1.0 mAdc, I B = 0)MMBTA05MMBTA06, SMMBTA06V (BR)CEO6080−−VdcEmitter −Base Breakdown Voltage (I E = 100 m Adc, I C = 0)V (BR)EBO 4.0−Vdc Collector Cutoff Current (V CE = 60 Vdc, I B = 0)I CES −0.1m Adc Collector Cutoff Current (V CB = 60 Vdc, I E = 0)MMBTA05(V CB = 80 Vdc, I E = 0)MMBTA06, SMMBTA06I CBO−−0.10.1m AdcON CHARACTERISTICSDC Current Gain(I C = 10 mAdc, V CE = 1.0 Vdc)(I C = 100 mAdc, V CE = 1.0 Vdc)h FE100100−−−Collector −Emitter Saturation Voltage (I C = 100 mAdc, I B = 10 mAdc)V CE(sat)−0.25Vdc Base −Emitter On Voltage(I C = 100 mAdc, V CE = 1.0 Vdc)V BE(on)−1.2VdcSMALL −SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 4)(I C = 10 mA, V CE = 2.0 V, f = 100 MHz)f T100−MHz3.Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.4.f T is defined as the frequency at which |h fe | extrapolates to unity.Figure 1. Switching Time Test CircuitsOUTPUTTURN-ON TIME V S t 6.0 pFtr = 3.0 ns+10 V5.0 m OUTPUTTURN-OFF TIME +V V S t 6.0 pFt r = 3.0 ns5.0 m *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage PolaritiesFigure 2. Current Gain Bandwidth Product vs.Collector CurrentFigure 3. CapacitanceFigure 4. Switching TimeI C , COLLECTOR CURRENT (mA)V R , REVERSE VOLTAGE (V)I C , COLLECTOR CURRENT (mA)200100502010t , T I M E (n s )2005001.0 k 5003070300700C , C A P A C I T A N C E (p F )300Figure 5. DC Current Gain vs. CollectorCurrentI C , COLLECTOR CURRENT (mA)f t a u , C U R R E N T G A I N B A N D W I D T H P R O D U C T (M H z )h f e , D C C U R R E N T G A I NFigure 6. Collector Emitter Saturation Voltagevs. Collector Current Figure 7. Base Emitter Saturation Voltage vs.Collector CurrentIC , COLLECTOR CURRENT (mA)I C , COLLECTOR CURRENT (mA)0.010.11V C E (s a t ), C O L L E C T O R −E M I T T E R S A T U R A T I O N V O L T A G E (V )V B E (s a t ), B A S E −E M I T T E R S A T U R A T I O N V O L T A G E (V )Figure 8. Base Emitter Turn −ON Voltage vs.Collector CurrentI C , COLLECTOR CURRENT (mA)1.1V B E (o n ), B A S E −E M I T T E R V O L T A G E (V )Figure 9. Saturation RegionI B , BASE CURRENT (mA)Figure 10. Base −Emitter TemperatureCoefficientI C , COLLECTOR CURRENT (mA)−0.8−1.2−1.6−2.0−2.4−2.8Figure 11. Safe Operating AreaV CE , COLLECTOR EMITTER VOLTAGE (V)10000IC , C O L L E C T O R C U R R E N T (m A )10.90.80.70.60.50.40.30.20.1V C E (s a t ), C O L L E C T O R −E M I T T E R S A T U R A T I O N V O L T A G E (V )R q V B , T E M P E R A T U R E C O E F F I C I E N T (m V /°C )Figure 12. Safe Operating AreaV CE , COLLECTOR EMITTER VOLTAGE (V)I C , C O L L E C T O R C U R R E N T (m A )1000100101ORDERING INFORMATIONDevice Package Shipping†3000 / Tape & Reel MMBTA05LT1G SOT−23(Pb−Free)MMBTA05LT3G SOT−2310,000 / Tape & Reel(Pb−Free)3000 / Tape & Reel MMBTA06LT1G SOT−23(Pb−Free)SMMBTA06LT1G SOT−233000 / Tape & Reel(Pb−Free)10,000 / Tape & Reel MMBTA06LT3G SOT−23(Pb−Free)SMMBTA06LT3G SOT−2310,000 / Tape & Reel(Pb−Free)†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.PACKAGE DIMENSIONSSOT −23 (TO −236)CASE 318−08ISSUE APNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISHTHICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.VIEW CDIM A MIN NOM MAX MINMILLIMETERS0.89 1.00 1.110.035INCHES A10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L1 2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.0290−−−100−−−10q°°°°STYLE 6:PIN 1.BASE2.EMITTER3.COLLECTOR*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at /site/pdf/Patent −Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMIMMBTA06LT3G MMBTA06LT1G MMBTA05LT1G MMBTA05LT3G MMBTA05LT1MMBTA06LT1 MMBTA05LT3。
MMBTA63LT1G中文资料
2x M G G
1
2x = Device Code x = U for MMBTA63LT1 x = V for MMBTA64LT1
M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location)
元器件交易网
hFE, DC CURRENT GAIN (X1.0 K)
V, VOLTAGE (VOLTS)
200
100 70 50 30 20
10 7.0 5.0
3.0 2.0
−0.3
TA = 125°C 25°C
−55°C −0.5 −0.7 −1.0
MMBTA63LT1, MMBTA64LT1
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C
RqJA PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
H E 2.10
2.40
2.64
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
MMBT2369;中文规格书,Datasheet资料
MMBT2369 / PN2369 — NPN Switching TransistorFebruary 2008MMBT2369 / PN2369NPN Switching Transistor•This device is designed for high speed saturated switching at collector currents of 10mA to 100mA.•Sourced from process 21.Absolute Maximum Ratings * T a= 25×C unless otherwise noted* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.** Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%NOTES:1) These rating are based on a maximum junction temperature of 150 degrees C.2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics T a= 25°C unless otherwise noted* Device mounted on FR-4PCB 1.6” ¥ 1.6” ¥ 0.06”.SymbolParameter RatingsUnitsV CEO Collector-Emitter Voltage 15V V CBO Collector-Base Voltage 40V V EBO Emitter-Base Voltage 4.5V I C Collector Current- Continuous 200mA I CP **Collector Current (Pulse)400mA T J , T STGOperating and Storage Junction Temperature Range-55 ~ 150°CSymbolParameter Max.UnitsP D Total Device Dissipation Derate above 25°C3502.8mW mW/°C R θJC Thermal Resistance, Junction to Case 125°C/W R θJAThermal Resistance, Junction to Ambient357°C/WSOT-23BECMark: 1JTO-921. Emitter2. Base3. Collector1MMBT2369PN2369MMBT2369 / PN2369 — NPN Switching TransistorElectrical Characteristics T a= 25°C unless otherwise noted* Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%SymbolParameterTest ConditionMin.Max.UnitsOff Characteristics V (BR)CEO Collector-Emitter Breakdown Voltage *I C = 10mA, I B = 015V V (BR)CES Collector-Emitter Breakdown Voltage I C = 10μA, V BE = 040V V (BR)CBO Collector-Base Breakdown Voltage I C = 10μA, I E = 040V V (BR)EBO Emitter-Base Breakdown Voltage I E = 10μA, I C = 04.5VI CBOCollector Cutoff CurrentV CB = 20V, I E = 0V CB = 20V, I E = 0, T a = 125°C 0.430μA μAOn Characteristics h FE DC Current Gain *I C = 10mA, V CE = 1.0V I C = 100mA, V CE = 2.0V 4020120V CE(sat)Collector-Emitter Saturation Voltage *I C = 10mA, I B = 1.0mA 0.25V V BE(sat)Base-Emitter Saturation Voltage I C = 10mA, I B = 1.0mA 0.70.85V Small Signal CharacteristicsC obo Output Capacitance V CB = 5.0V, I E = 0, f = 1.0MHz 4.0pF C ibo Input Capacitance V EB = 0.5V, I C = 0, f = 1.0MHz 5.0pFh feSmall -Signal Current GainI C = 10mA, V CE = 10V, R G = 2.0k Ω, f = 100MHz5.0Switching Characteristics t s Storage Time I B1 = I B2 = I C = 10mA13ns t on Turn-On Time V CC = 3.0V, I C = 10mA, I B1 = 3.0mA 12ns t offTurn-Off TimeV CC = 3.0V, I C = 10mA, I B1 = 3.0mA, I B2 = 1.5mA18nsMMBT2369 / PN2369 NPN Switching TransistorMMBT2369 / PN2369Rev. I31TRADEMARKSThe following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use andis not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms ACEx ®Build it Now™CorePLUS™CROSSVOLT ™CTL™Current Transfer Logic™EcoSPARK ®Fairchild ®Fairchild Semiconductor ®FACT Quiet Series™FACT ®FAST ®FastvCore™FPS™FRFET ®Global Power Resource SMGreen FPS™Green FPS™ e-Series™GTO™i-Lo ™IntelliMAX™ISOPLANAR™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MillerDrive™Motion-SPM™OPTOLOGIC ®OPTOPLANAR ®®PDP-SPM™Power220®Power247®POWEREDGE ®Power-SPM™PowerTrench ®Programmable Active Droop™QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™SMART START™SPM ®STEALTH™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™The Power Franchise ®TinyBoost™TinyBuck™TinyLogic ®TINYOPTO™TinyPower™TinyPWM™TinyWire™µSerDes™UHC ®UniFET™VCX™Datasheet Identification Product Status DefinitionAdvance InformationFormative or In DesignThis datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First ProductionThis datasheet contains preliminary data; supplementary data will be pub-lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontin-ued by Fairchild semiconductor. The datasheet is printed for reference infor-mation only.分销商库存信息: FAIRCHILD MMBT2369。
MMBT G 中文数据手册
集电极 - 发射极饱和电压 VCEsat (V)
集电极耗散功率 PC (W)
电容 C (pF)
DC电流增益 hFE
MMBT5551
500
COMMON EMITTER VCE=5V
hFE —— IC
Ta=100℃
Ta=25℃
100
10 1
0.3
β=10
0.1
1 0
集电极电流 IC (mA)
B VCEsat —— IC
Ta=25℃
70uA
12
60uA
9
50uA
40uA
6
30uA
3
IB=20uA
0
0
2
4
6
8
集电极 - 发射极电压 VCE (V)
1.0
β=10
VBEsat ——
IC
10
12
0.8
Ta=25℃
0.6
Ta=100℃
0.4
基极-发射极饱和电压 VBEsat (V)
0.2 0.1
1
10
集电极电流
I
C
(mA) VBE
江苏长电科技股份有限公司
SOT-23 塑料封装晶体管
MMBT5551 晶体管 (NPN)
SOT–23
特性 z 对MMBT5401的补充 z 非常适合中等功率放大和开关
丝印标记: G1
最大额定值(Ta=25℃除非另有说明)
符号
参数
值
VCBO VCEO VEBO
IC PC RΘJA Tj Tstg
C-B极间电压 C-E极间电压 E-B极间电压 C集电极电流 C集电极耗散功率 Thermal Resistance From Junction To Ambient 结温 储存温度
稳压二极管
* 三极管小功率三极管带阻尼三极管可控硅* 按产品封装分类TO-92TO-92L SOT-89SOT-23SO绍>>>三极管产品系列>>>小功率三极管率三极管TO-92 13002TO-92 13002A TO-92 1702TO-92 28S TO-92 2TO-92 2N2222A TO-92 2N3416TO-92 2N3417TO-92 2N3704TO-92 3TO-92 2N3904TO-92 2N4400TO-92 2N4401TO-92 2N5088TO-92 9TO-92 2N5550TO-92 2N5551TO-92 2N6517TO-92 2SC1008TO-92 13TO-92 2SC1213A TO-92 2SC1359TO-92 2SC1383TO-92 2SC1384TO-92 93TO-92 2SC1623TO-92 2SC1674TO-92 2SC1675TO-92 2SC1740TO-92 15TO-92 2SC1907TO-92 2SC1923TO-92 2SC1959TO-92 2SC2001TO-92 02TO-92 2SC2058TO-92 2SC2120TO-92 2SC2310TO-92 2SC2362TO-92 83TO-92 2SC2412TO-92 2SC2458TO-92 2SC2655TO-92 2SC2668TO-92 15TO-92 2SC2784TO-92 2SC2785TO-92 2SC2786TO-92 2SC2787TO-92 84U SOT-89 2SC2901TO-92 2SC3112TO-92 2SC3190TO-92 2SC3195TO-92 98TO-92 2SC3199TO-92 2SC3202TO-92 2SC3203TO-92 2SC3266TO-92 79TO-92 2SC3330TO-92 2SC3731TO-92 2SC380TO-92 2SC3875TO-92 76TO-92 2SC4002TO-92 2SC4115TO-92 2SC4375U SOT-89 2SC458TO-92 43TO-92 2SC5344TO-92 2SC5345TO-92 2SC535TO-92 2SC536TO-92 0TO-92 2SC732TO-92 2SC828TO-92 2SC828A TO-92 2SC930C1...F1T O-92 5TO-92 2SD1303TO-92 2SD1616TO-92 2SD1616A TO-92 2SD2150U SOT-89 8TO-92 2SD471TO-92 2SD655TO-92 2SD734TO-92 2SD882S TO-92 5TO-92 2SD966TO-92 8050TO-92 8050-1.5A TO-92 8050-2A TO-92 SOT-89 9011TO-92 9013TO-92 9014TO-92 9016TO-92TO-92 BC182TO-92 BC183TO-92 BC184TO-92 BC237TO-92TO-92 BC239TO-92 BC337TO-92 BC338TO-92 BC368TO-92TO-92 BC547TO-92 BC548TO-92 BC549TO-92 BC550TO-92TO-92 BC637TO-92 BC639TO-92 BC817SOT-23 BC817W SOT-323BC846SOT-23 BC846W SOT-323 B C847SOT-23 SOT-23 B C818W SOT-323W SOT-323BC848SOT-23 B C848W SOT-323 B C849SOT-23 BC849W SOT-323BCW60SOT-23 BFS20SOT-23 BV32TO-92 SOT-23 B C850W SOT-323TO-92 KSD471TO-92 MMBT2222SOT-23 MMBT2222A SOT-23 MMBT2222AW SOT-323 222W SOT-323MMBT2369SOT-23 M MBT2369A SOT-23 MMBT28S SOT-23 MMBT3904SOT-23MMBT4401SOT-23 M MBT4401W SOT-323 M MBT491A SOT-23 MMBT5089SOT-23 904W SOT-323551SOT-23 M MBT8050SOT-23 M MBT8050-1.5A S OT-23 MMBT8050-2A S OT-23 MMBT8050W SOT-323 MMBT9013SOT-23 M MBT9014SOT-23 MMBT9018SOT-23 MMBT9018W SOT-323 050W-1.5A SOT-32306SOT-23 M MBTA10SOT-23 M MBTA11SOT-23 MMBTA42SOT-23 MMBTA43SOT-23 44SOT-23 M MBTH10SOT-23 M MBTSC1009SOT-23 MMBTSC1621 SOT-23 MMBTSC1623SOT-23 C1815SOT-23 M MBTSC2223S OT-23 M MBTSC2411SOT-23 MMBTSC2412 SOT-23 MMBTSC2413SOT-23C2712SOT-23 M MBTSC2714S OT-23 M MBTSC2715SOT-23 MMBTSC2785 SOT-23 MMBTSC2787SOT-23 C3199SOT-23 M MBTSC3265S OT-23 M MBTSC3324SOT-23 MMBTSC3356 SOT-23 MMBTSC3356W SOT-323 C380SOT-23 M MBTSC3838S OT-23 M MBTSC3838W SOT-323 M MBTSC3875 SOT-23 MMBTSC3876SOT-23MMBTSC4097W SOT-323 M MBTSC4226 SOT-23 MMBTSC4226W SOT-323 C3928SOT-23 M MBTSC4075W SOT-323C5065SOT-23 M MBTSC5084S OT-23 M MBTSC5343SOT-23 MMBTSC5343W S OT-323 M MBTSC5345SOT-23 C5345W SOT-323MMBTSC930 SOT-23 M MBTSC945SOT-23 MMBTSC945W SOT-323 M MBTSD123SOT-23MMBTSD471SOT-23 MPSA05TO-92 MPSA06TO-92 D1781SOT-23 M MBTSD2652W SOT-3230,11TO-92 MPSA42TO-92 MPSA43TO-92 MPSA44TO-92 MPSA44U SOT-89 7TO-92 PBSS4140T SOT-23 P BSS4240SOT-237TO-92 2N2907A TO-92 2N3905TO-92 2N3906TO-92 2N4402TO-923TO-92 2N5086TO-92 2N5087TO-92 2N5400TO-92 2N5401TO-920TO-92 2SA1015TO-92 2SA1016TO-92 2SA1020TO-92 2SA1024TO-9248TO-92 2SA1174TO-92 2SA1175TO-92 2SA1206TO-92 2SA1266TO-9267TO-92 2SA1268TO-92 2SA1270TO-92 2SA1271TO-92 2SA1300TO-9258TO-92 2SA1505TO-92 2SA1585TO-92 2SA1664U SOT-89 2SA562TO-928N TO-92 2SA733TO-92 2SA928TO-92 2SA933TO-92 2SA950TO-922TO-92 2SB1116TO-92 2SB1116A TO-92 2SB1386U SOT-89 2SB1424U SOT-894TO-92 2SB772S TO-92 8550TO-92 8550-1.5A TO-92 8550-2A TO-92 SOT-89 9012TO-92 9015TO-92 BC212TO-92 BC307TO-92TO-92 BC327TO-92 BC328TO-92 BC369TO-92 BC556TO-92TO-92 BC558TO-92 BC559TO-92 BC560TO-92 BC636TO-92TO-92 BC640TO-92 BC807SOT-23 BC807W SOT-323 B C808SOT-23 BC856SOT-23 B C856W SOT-323 B C857SOT-23 BC857W SOT-323 W SOT-323BC859SOT-23 BC859W SOT-323 B C860W SOT-323 SOT-23 B C858W SOT-323SOT-23 B CW61SOT-23 B CW68SOT-23 KSB564TO-92 MMBT2907SOT-23 907A SOT-23 M MBT2907AW S OT-323MMBT2907W SOT-323 M MBT3906SOT-23 MMBT3906W SOT-323MMBT5087SOT-23 MMBT5400SOT-23 MMBT5401SOT-23 403SOT-23 M MBT4403W SOT-32391A SOT-23 M MBT8550SOT-23 M MBT8550-1.5A S OT-23 MMBT8550-2A S OT-23 MMBT8550W SOT-323 MMBT9012SOT-23 M MBT9015SOT-23 MMBTA56SOT-23 MMBTA92SOT-23 550W-1.5A SOT-32392W SOT-323MMBTA93SOT-23 M MBTA94SOT-23 MMBTSA1015 SOT-23 MMBTSA1036 SOT-23A1037SOT-23 M MBTSA1162S OT-23 M MBTSA1182SOT-23 MMBTSA1235 SOT-23 MMBTSA1256 SOT-23MMBTSA1365SOT-23 MMBTSA1504 SOT-23 MMBTSA1505 SOT-23A1298SOT-23 M MBTSA1298W SOT-323A1576SOT-23 M MBTSA1979S OT-23 M MBTSA1980W SOT-323 M MBTSA1981 SOT-23 MMBTSA2018 SOT-23A733SOT-23 M MBTSA812 SOT-23 M MBTSB1197SOT-23 MMBTSB1198 SOT-23 MMBTSB1689W S OT-323 B1690SOT-23 M MBTSB624 SOT-23 M MBTSB815SOT-23 MPS3638A TO-92 MPS750TO-9299TO-92 MPSA55TO-92 MPSA56TO-92 MPSA92TO-92 MPSA93TO-924TO-92 MPSA94U SOT-89绍>> 带阻三极管封装型号封装型号封装型号封装RA101SS SOT-23 MMBTRA102SS SOT-23MMBTRA103SS SOT-23 MMBTRA104SS SOT-RA105SS SOT-23 MMBTRA106SS SOT-23MMBTRA107SS SOT-23 MMBTRA108SS SOT-RA109SS SOT-23 MMBTRA110SS SOT-23MMBTRA111SS SOT-23 MMBTRA112SS SOT-RA113SS SOT-23 MMBTRA114SS SOT-23MMBTRA116SS SOT-23 MMBTRA117SS SOT-RA118SS SOT-23 MMBTRA119SS SOT-23MMBTRA120SS SOT-23 MMBTRA121SS SOT-RA122SS SOT-23 MMBTRA221S SOT-23MMBTRA221SS SOT-23 MMBTRA222S SOT-RA222SS SOT-23 MMBTRA223S SOT-23MMBTRA223SS SOT-23 MMBTRA224S SOT-RA224SS SOT-23 MMBTRA225S SOT-23MMBTRA225SS SOT-23 MMBTRA226S SOT-RA226SS SOT-23 MMBTRC101SS SOT-23MMBTRC102SS SOT-23 MMBTRC103SS SOT-RC104SS SOT-23 MMBTRC105SS SOT-23MMBTRC106SS SOT-23 MMBTRC107SS SOT-RC108SS SOT-23 MMBTRC109SS SOT-23MMBTRC110SS SOT-23 MMBTRC111SS SOT-RC112SS SOT-23 MMBTRC113SS SOT-23MMBTRC114SS SOT-23 MMBTRC116SS SOT-RC117SS SOT-23 MMBTRC118SS SOT-23MMBTRC119SS SOT-23 MMBTRC120SS SOT-RC121SS SOT-23 MMBTRC122SS SOT-23MMBTRC231S SOT-23 MMBTRC233S SOT-RC234S SOT-23 MMBTRC241S SOT-23MMBTRC241SS SOT-23 MMBTRC242S SOT-RC242SS SOT-23 MMBTRC243S SOT-23MMBTRC243SS SOT-23 MMBTRC244S SOT-RC244SS SOT-23 MMBTRC245S SOT-23MMBTRC245SS SOT-23 MMBTRC246S SOT-RC246SS SOT-23 MMDT1N434SOT-23MMDT1P434SOT-23 MMDT221F SOT-221K SOT-23 MMDT5110W SOT-323MMDT5111W SOT-323 MMDT5112W SOT-5113W SOT-323 MMDT5114W SOT-323MMDT5115W SOT-323 MMDT5116W SOT-5117W SOT-323 MMDT5118W SOT-323MMDT5119W SOT-323 MMDT511DW SOT-511EW SOT-323 MMDT511FW SOT-323MMDT511HW SOT-323 MMDT511LW SOT-511MW SOT-323 MMDT511NW SOT-323MMDT511TW SOT-323 MMDT511VW SOT-511ZW SOT-323 MMDT5210W SOT-323MMDT5211W SOT-323 MMDT5212W SOT-5213W SOT-323 MMDT5214W SOT-323MMDT5215W SOT-323 MMDT5216W SOT-5217W SOT-323 MMDT5218W SOT-323MMDT5219W SOT-323 MMDT521DW SOT-521EW SOT-323 MMDT521FW SOT-323MMDT521KW SOT-323 MMDT521LW SOT-521MW SOT-323 MMDT521NW SOT-323MMDT521TW SOT-323 MMDT521VW SOT-521ZW SOT-323 MMDT5P333SOT-23MMDTA115W SOT-323 MMDTA124W SOT-A143X SOT-23 MMDTC114W SOT-323MMDTC123W SOT-323 MMDTC343SOT-N133SOT-23 MMUN2111SOT-23MMUN2112SOT-23 MMUN2113SOT-2114SOT-23 MMUN2115SOT-23MMUN2116SOT-23 MMUN2130SOT-2131SOT-23 MMUN2132SOT-23MMUN2133SOT-23 MMUN2134SOT-2211SOT-23 MMUN2212SOT-23MMUN2213SOT-23 MMUN2214SOT-2215SOT-23 MMUN2216SOT-23MMUN2230SOT-23 MMUN2231SOT-2232SOT-23 MMUN2233SOT-23MMUN2234SOT-23 MMUN2235SOT-2238SOT-23 MMUN2241SOT-23RA101S TO-92 RA102S TO-9 3S TO-92 RA104S TO-92RA105S TO-92 RA106S TO-9 0S TO-92 RA111S TO-92RA112S TO-92 RA113S TO-9 4S TO-92 RA221TO-92RA221S TO-92 RA222TO-9 2S TO-92 RA223TO-92RA223S TO-92 RA224TO-9 4S TO-92 RA225TO-92RA225S TO-92 RA226TO-9 6S TO-92 RC101S TO-92RC102S TO-92 RC103S TO-9 4S TO-92 RC105S TO-92RC106S TO-92 RC110S TO-9 1S TO-92 RC112S TO-92RC113S TO-92 RC114S TO-9 1TO-92 RC241S TO-92RC242TO-92 RC242S TO-9 3TO-92 RC243S TO-92RC244TO-92 RC244S TO-9 5TO-92 RC245S TO-92RC246TO-92 RC246S TO-9 4TO-92 TC114TO-92共有。
BT168GW中文资料
GENERAL DESCRIPTIONQUICK REFERENCE DATAGlass passivated,sensitive gate SYMBOL PARAMETER MAX.MAX.MAX.MAX.UNIT thyristors in a plastic envelope suitable for surface mounting,BT168BW DW EW GW intended for use in Residual Current V DRM ,Repetitive peak 200400500600V Devices/Ground Fault Interrupters/V RRM off-state voltages Leakage Current Circuit Breakers I T(AV)Average on-state 0.60.60.60.6A (RCD/ GFI/ LCCB)applications currentwhere a minimum I GT limit is needed.I T(RMS)RMS on-state current 1111A These devices may be interfaced I TSMNon-repetitive peak 8888Adirectly to microcontrollers,logic on-state currentintegrated circuits and other low power gate trigger circuits.PINNING - SOT223PIN CONFIGURATIONSYMBOLLIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT B D E G V DRM , V RRM Repetitive peak off-state-2001400150016001V voltages I T(AV)Average on-state current half sine wave;-0.63A T sp ≤ 112 ˚CI T(RMS)RMS on-state current all conduction angles -1A I TSMNon-repetitive peak t = 10 ms -8A on-state currentt = 8.3 ms-9A half sine wave;T j = 25 ˚C prior to surge I 2t I 2t for fusingt = 10 ms-0.32A 2s dI T /dt Repetitive rate of rise of I TM = 2 A; I G = 10 mA;-50A/µs on-state current after dI G /dt = 100 mA/µstriggeringI GM Peak gate current -1A V GM Peak gate voltage-5V V RGM Peak reverse gate voltage -5V P GM Peak gate power -2W P G(AV)Average gate power over any 20 ms period -0.1W T stg Storage temperature -40150˚C T jOperating junction -125˚Ctemperature1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.THERMAL RESISTANCESSYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNIT R th j-sp Thermal resistance --15K/W junction to solder point R th j-aThermal resistance pcb mounted, minimum footprint -156-K/W junction to ambientpcb mounted, pad area as in fig:14-70-K/WSTATIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNIT I GT Gate trigger current V D = 12 V; I T = 10 mA; gate open circuit 2050200µA I L Latching current V D = 12 V; I GT = 0.5 mA; R GK = 1 k Ω-26mA I H Holding current V D = 12 V; I GT = 0.5 mA; R GK = 1 k Ω-25mA V T On-state voltage I T = 2 A- 1.35 1.5V V GT Gate trigger voltage V D = 12 V; I T = 10 mA; gate open circuit -0.50.8V V D = V DRM(max); I T = 10 mA; T j = 125 ˚C;0.20.3-V gate open circuitI D , I ROff-state leakage currentV D = V DRM(max); V R = V RRM(max); T j = 125 ˚C;-0.050.1mAR GK = 1 k ΩDYNAMIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNIT dV D /dt Critical rate of rise of V DM = 67% V DRM(max); T j = 125 ˚C;-25-V/µs off-state voltageexponential waveform; R GK = 1 k Ωt gt Gate controlled turn-on I TM = 2 A; V D = V DRM(max); I G = 10 mA;-2-µs timedI G /dt = 0.1 A/µst qCircuit commutated V D = 67% V DRM(max); T j = 125 ˚C;-100-µsturn-off timeI TM = 1.6 A; V R = 35 V; dI TM /dt = 30 A/µs;dV D /dt = 2 V/µs; R GK = 1 k ΩMOUNTING INSTRUCTIONSPRINTED CIRCUIT BOARDMECHANICAL DATANotes1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to preventdamage to MOS gate oxide.2. Refer to surface mounting instructions for SOT223 envelope.3. Epoxy meets UL94 V0 at 1/8".DEFINITIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1997All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.。
MMBT2369中文资料
NPN Switching Transistor
(continued)
Collector-Emitter Saturation Voltage vs Collector Current
0.5 β = 10
0.4
0.3
0.2 25 °C
0.1 - 40 ºC
125 °C
0
0.1
1
10
100
500
I C - COLLECTOR CURRENT (mA)
元器件交易网
PN2369A / MMBT2369A / MMPQ2369
DC Typical Characteristics
hFE - DC CURRENT GAIN
DC Current Gain vs Collector Current
200 V CE = 1V
150 125 °C
CC
C
C
SOIC-16
NPN Switching Transistor
This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21.
1.2
1
0.8
- 40 ºC
25 °C
0.6
125 °C
0.4 0.1
1
10
100 300
I C - COLLECTOR CURRENT (mA)
P 21
VBE(ON)- BASE-EMITTER ON VOLTAGE (V)
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
普传 168 家族变频调速器 说明书
进风
mm以上
2-3 配线
变频调速器配线，分为主回路及控制回路两部分。用户必须依照下图所示的配线回路正确连接。 配线图一：控制板编号为 168GHSCD
G 、H系列380V/30KW，220V/15KW以下
三 相 电 源
正转
反转
寸动
多段速度1 多段速度2 输入选择指令/多段速度3
自由停车
MCCB
Rb R S T
V2
设定
I2
信号 0-10V
V3
0-20mA 4-20mA
注：中国采用 PI-168，出口改用 PI97，此视同一产品两种名称。
本公司其他产品资料请查阅网址：http//
目录
第一章 检查与安全注意事项...................................................................................................... 2 第二章 安装及备用电路.............................................................................................................. 3 第四章 试运行.............................................................................................................................. 9 第五章 功能参数一览表............................................................................................................ 10 第六章 功能参数说明................................................................................................................ 13 第七章 异常诊断与处理............................................................................................................ 33 第八章 标准规范........................................................................................................................ 34 第九章 保养与检修.................................................................................................................. 42 第十章 选 件............................................................................................................................ 44 十一章 品质保证........................................................................................................................ 49 附录 1............................................................................................................................................. 50 附录 2............................................................................................................................................. 51 附录 3............................................................................................................................................. 53 附录 4............................................................................................................................................. 54
BLUESKY 來電顯示型有線電話 CT-168 使用說明書
為充分發揮本機功能,在您使用前請詳細閱讀本說明書,並妥善保存,作為日後參考。
)本機特點及來電顯示服務須知 (2))外型及各部位名稱 (3))安裝方法 (4))使用前設定 (4)易功能表 (4)時間設定 (5)本地區碼的設定 (5)防併機盜撥設定 (6)鬧鐘時間設定 (6)對比度的設定 (6)(五)電話功能操作說明 (7)接聽電話 (7)撥打電話 (7)重撥功能 (8)暫切功能 (8)保留功能 (8)來電記憶使用 (9)撥出記憶使長控(六)規格(七)簡易保(八)常見故障排除方(九)電源使用需知11.FSK及DTMF雙制式自動兼容,來電訊息自動識別接收。
2.約可記憶35組的來電號碼及時間，記憶組數視來電號碼的長短而定。
3.約可記憶5組的撥出號碼及通話計時時間，記憶組數視撥出號碼的長短而定。
4.來電記憶與撥出記憶均可查詢、回撥及刪除。
5.具有防併機盜撥功能。
6.單鍵保留、重撥、暫切等功能。
7.具長控鎖功能。
23 1.電話線插座2.長控鎖3.液晶顯示幕4.刪除鍵5.音量鍵6.聽筒7.來鈴燈8.上查詢鍵9.撥出查詢鍵10.指示燈11.下查詢鍵12.設定鍵13.對比度鍵14.數字鍵15.免持撥號鍵16.重撥鍵17.暫切鍵18.保留鍵12(初次使用時,請務必詳閱)※若您家中需加裝分機,請勿裝設超過四部分機,以免影響通話品質1.打開話機底部的電池蓋，依正負極性裝入全新的2顆4號電池，此時顯示幕會顯示數字。
若無顯示，請確定電池正負極性是否安裝正確。
2.將聽筒曲線連接聽筒與話機。
將電話線一端接入話機底部的局線插座內，另一 端接家中電話線插座。
1(電話插座)24使用前設定(初次使用時,請務必詳閱)簡易功能表※所有的設定皆須在待機狀態（未通話狀態）下設定按 刪除鍵 退出設定51.在待機狀態下，按 設定鍵 ，顯示幕顯示" "。
2.按一下 上查詢鍵 ，顯示幕顯示" "，再按一下 設定鍵 進入區域碼- - - - - "，第一個"-"閃爍。
ASME中国制造-II-B
左栏第 2 段 文中原“……结构上打印规范标志钢印的……”修改为“……结构上
第3行
打印认证标记的……”。
左栏第 2 段 文中原“ASME 的意图是：为了用户、执法监察部门和符合规范一切 第 4~7 行 要求的标志持有者的利益，需维护规范标志的声誉。”修改为：
ASME 的意图是：为了用户、执法监察部门和符合规范一切要求的认
15
SB-61
1.3
“英寸—碲”改为“英寸—磅”。
19
SB-75
副标题 改为：
[对所包括的合金与 ASTM B75-02（R10）标准完全等同]
43
SB-127
表5
规定厚度为 3/16～<1/4，宽度为>48～<60 的平整度允许偏差改为 11/16；
规定厚度为 1/2～<3/4，宽度为>72～<84 的平整度允许偏差改为 13/16；
48
SB-135
新 1.3 原“1.2”小节重新编号为“1.3”小节，内容不变。
（原 1.2）
48
SB-135
新 1.4 原“1.3”小节重新编号为“1.4”小节，内容不变。
（原 1.3）
48
SB-135
2.2
B251 标准位置移动到 B154 标准后。
49
SB-135
7.2
“注 2”改为“注 1”。
3
SB-42
10.6 第 5 行中“061”改为“O61”。
4
SB-42
表 1 编辑上的修改：
C10800 的相关内容提前到 C12000 之前。
7
SB-42
表 S5.1 第 3 栏第 2 行中“状态（见表 6.2）”改为“状态（见 6.1）”。
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ቤተ መጻሕፍቲ ባይዱ
Symbol -VCBO -VCEO -VEBO -IC -ICP Ptot TJ Ts
Value 15 12 6 1.5 3
1)
Unit V V V A A mW
O
200 150 -55 to +150
C C
O
Single pulse, Pw = 1 ms.
Characteristics at Tamb = 25 OC Parameter DC Current Gain at -VCE = 2 V, -IC = 200 mA Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE= 10 µA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 25 mA Collector Cutoff Current at -VCB = 15 V Emitter Cutoff Current at -VEB = 6 V Transition Frequency at -VCE = 2 V, IE = 200 mA, f = 100 MHz Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Symbol hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCEsat -ICBO -IEBO fT Cob Min. 270 15 12 6 Typ. 400 12 Max. 680 0.2 100 100 Unit V V V V nA nA MHz pF
®
Dated : 13/01/2006
元器件交易网
MMBTSB1689W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/01/2006
元器件交易网
MMBTSB1689W
PNP Silicon Epitaxial Planar Transistors
for low frequency amplifier and driver applications
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range