BS107中文资料

BS107
N–CHANNEL ENHANCEMENT MODE TRANSISTOR
Features
·Case: TO-92 Plastic ·Leads: Solderable per
MIL-STD-202, Method 208·Pin Connections: See Diagram ·
Weight: 0.18 grams (approx.)
Mechanical Data
Maximum Ratings
@ T A = 25°C unless otherwise specified
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of
2.0mm from case.2. Pulse Test: Pulse width = 80µs, duty factor = 1%.
Characteristic Symbol Value Unit Drain-Source-Voltage V DSS 200V Drain-Gate-Voltage
V DGS 200V Gate-Source-Voltage (pulsed) (Note 2)V GS ±20V Drain-Current (continuous)
I D 120mA Power Dissipation @T C = 25°C (Note 1)P d 830mW Operating and Storage Temperature Range
T j ,T STG
-55 to +150
°C
·High Breakdown Voltage ·High Input Impedance ·Fast Switching Speed
·
Specially Suited for Telephone Subsets
Inverse Diode
@ T A = 25°C unless otherwise specified Characteristic
Symbol Value Unit Maximum Forward Current (continuous)I F 0.5A Forward Voltage Drop (typical)@V GS = 0, I F = 0.5A,T j = 25°C
V F
0.85
V
D
S G D
H
H
BOTTOM VIEW
E
A
B
C
G
TO-92
Dim Min Max A 4.45 4.70B
4.46 4.70C 12.7—D 0.410.63E 3.43 3.68G 2.42 2.67H
1.14
1.40
All Dimensions in mm
Characteristic
Symbol Min Typ Max Unit
Test Condition
Drain-Source Breakdown Voltage V (BR)DSS 200230—V I D = 100µA,V GS = 0Gate-Body Leakage Current I GSS ——10nA V GS = 15V,V DS = 0Drain-Cutoff Current
I DSS I DSX ——301.0nA µA V DS =130V,V GS = 0V DS = 70V,V GS = 0.2V Gate-Source Threshold Voltage V GS(th)— 1.83V V GS =V DS , I D = 1.0mA Drain-Source ON Resistance
r DS(ON)—1828W V GS = 2.8V, I D = 20 mA Thermal Resistance, Junction to Ambient Air R q JA ——150K/W (Note 1)
Input Capacitance Output Capacitance Feedback Capacitance C iss C oss C rss —588.01.5—pF V DS = 20V,V GS = 0,f =1.0MHz Turn On Time Turn Off Time t on t off
—
5.015
—
ns
V GS = 10V,V DS = 10V,R D = 100W
Electrical Characteristics
@ T A = 25°C unless otherwise specified
10
V ,DRAIN-SOURCE VOLTAGE (V)Fig.3.Saturation Characteristics DS I ,D R A I N O N -C U R R E N T (m A )
D (O N )0100
200
300
400
500
2
4
6
805
V ,GATE-SOURCE VOLTAGE (V)Fig.4.Drain Current vs Gate-Source Voltage
GS I D R A I N C U R R E N T (A )
D ,0
0.2
0.4
0.6
0.8
1.0
2314100200300400
5000
1
2
3
4
5
g ,F O R W A R D T R A N S C O N D U C T A N C E (m m )
f s V ,
GATE-SOURCE VOLTAGE (VOLTS)Fig.5.Transconductance vs Gate-Source Voltage
GS 0
200
I ,DRAIN CURRENT (mA)
Fig.6.Transconductance vs.Drain Current
D g ,F O R W A R D T R A N S C O N D U C T A N C
E (m
m )
f s 0100
200
300
400
500
100
20
100
100
200
300
400
50040
60
80
V ,DRAIN-SOURCE VOLTAGE (V)
Fig.2.Output Characteristics
DS I (O N ),D R A I N O N -C U R R E N T (m A )
D 0
100
200
T ,AMBIENT TEMPERATURE (ºC)Fig.1.Power Derating Curve
A P ,P O W E R D I S S I P A T I O N (W )
d 0
0.20.40.60.8
1。