IRG4PF40FD中文资料
新维AMDP-F40□系列电动机保护器使用说明书
AMDP-X/F40□ 系列电动机保护器使用说明产品概述主要特点：DSP 为核心，数字设定，数字显示，保护功能完备、保护性能可靠，检测、显示电压，通用电流互感器检测电流，4路与采集、保护电路及DSP隔离、参数可设置电流范围的4-20mA输出。
配有隔离的RS-485、MODBUS通讯接口。
保护功能：缺相、短路、接地、堵转、过载、电流不平衡。
适用范围：额定电压不高于1140V，频率为50Hz或60Hz的三相交流电动机。
电流互感器一次电流（A）100 150 200300400500600800 1000 12001600最大设定电流（A） 100 150 200300400500600800 1000 12001600最小设定电流（A） 20 30 40 60 80 100120160 200 240320电动机最大功率（KW） 45 75 110132160250315355 500 600800电动机最小功率（KW） 11 15 22 30 45 55 75 90 110 132160工作电压：AC 85V — 265V、DC 85V — 265V功率消耗：小于 2W检测电压：AC 0 — 500V（电压显示值可由参数设为检测值的1、1.732、3、5.196倍）采集精度：0.5环境温度：- 20℃ — 50℃继电器触点：AMDP-X/F401：1常开、常闭触点，AC 250V/10A（阻性负载）、DC 30V/10AAMDP-X/F402：2常开、常闭触点，AC 220V/5A（阻性负载）、DC 30V/5A4-20mA负载电阻：小于600ΩAMDP-X/F40□系列电动机保护器数据显示AMDP-X/F40□ 系列电动机保护器在电动机正常运行时，显示电动机A、B、C相电流、电压；当电动机发生缺相、短路、接地、堵转、过载、电流不平衡故障时，断开内部继电器触点停止电动机运行(故障灯亮)，同时显示故障代码指示故障类型，并且显示电动机发生故障时的A、B、C相电流、电压值。
IRG4PC30UD中文资料
PD 91462B
IRG4PC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ----
IGBT's . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min. -------------------------
GWF410资料
GAMEWELL-FCI12 Clintonville Road, Northford, CT 06472-1610 USA • Tel: (203) 484-7161 • Fax: (203) 484-7118Specifications are for information only, are not intended for installation purposes, and are subject to change without notice. No responsibility is assumed by Gamewell-FCI for their use.©2007 by Honeywell International Inc. All rights reserved. 9021-60294 Rev. A page 1 of 2Flex Series GWF41010 Zone Expandable ConventionalFire Alarm Control PanelDescriptioni 3™ is a trademark of Honeywell International Inc.UL ® is a registered trademark of Underwriter’s Laboratories, Inc.Windows ® is a registered trademark of Microsoft Corporation.The Flex 410 is a ten zone fire alarm control panel (FACP)expandable to twenty or thirty zones using optional CZM-400 zone expander module(s). The Flex 410 is ideal for a wide range of different sized installations such as hotels,schools, correctional institutions, health care facilities,small office buildings, and manufacturing plants. Initiating device circuits (IDCs) for the Flex 410 can be pro-grammed as either ten Class B (Style B) or five Class A (Style D) circuits. This is expandable to either twenty Class B (ten Class A), or thirty Class B (fifteen Class A) IDC cir-cuits. The panel is compatible with a variety of conven-tional two-wire smoke detectors, four-wire smoke detectors, and notification appliances. This includes Sys-tem Sensor i 3™ Series microprocessor-based detectors with advanced features like drift compensation, mainte-nance alert and freeze warning. (See Appendix A of the Flex 410 Installation & Operations Manual PN 151321 for a list of compatible devices.)Outputs include four Class B (Style Y) or two Class A (Style Z) supervised notification appliance circuits (NACs)to annunciate alarm conditions. NAC circuits support single circuit synchronization, regulated. Three programmable auxiliary relay outputs can be programmed to activate (for all zones or individual zones): pre-alarm, fire alarm, auxil-iary alarm, alarm by zone and system or circuit troubles (e.g., loss of AC, low battery, communication failure, phone line trouble, fire drills, and NAC trouble).The Flex 410 includes a built-in digital alarm communicator (DACT) to report status to a central station. A user-friendly,two-line LCD display and tactile keypad makes system pro-gramming and control easy. The Flex 410 cabinet can be flush- or surface-mounted and a Plexiglas window/dead-front door kit is available where jurisdictions require. The fully regulated, efficient 6-amp power supply with charger ensures adequate power is available at all times.The Flex 410 fire alarm control panel is listed to UL ® Standard 864, 9th Edition.Features•10 Class B (Style B) or 5 Class A (Style D) initiating device circuits (IDCs), expandable up to 30 Class B or 15 Class A IDCs with optional zone expander(s)•Supervised zone expanders and I/O modules can be mounted remotely in optional accessory cabinet •All zones compatible with 2- and 4-wire detectors•Built-in digital alarm communication transmitter (DACT) with dual phone line monitors• 4 Class B (Style Y) or 2 Class A (Style Z) supervised notification appliance circuits (NACs)•Selectable/programmable NAC output patterns:- ADA compliant strobe synchronization- ANSI audible signals as required by NFPA 72- Single Stroke BI - Constant output - California code - March code(continued next page)GWF4107165-1288:182SIGNALINGS521An ISO 9000-2000 CompanyGAMEWELL-FCI12 Clintonville Road, Northford, CT 06472-1610 USA • Tel: (203) 484-7161 • Fax: (203) 484-71189021-60294 Rev. A page 2 of Features (continued)•Built-in 2-line, 32-character LCD display with easy-to-read English language readouts• 3 programmable general purpose relays •Built-in walk test•Programmable from keypad, remote annunciator, or using direct connect port for on-site downloading with SmartProgram 400 software (Windows ®-based)•Programmable features to minimize false alarms: smoke verification, pre-alarm delay, cross-zoning, and enhanced verification•Municipal box service and polarity reversal signaling •Programmable date settings for Daylight Savings Time, and clock source setting options for 50 Hz, 60 Hz or internal clockOptionsGWCZM-400Each GWCZM-400 zone expander pro-vides the control panel with ten additional Class B (Style B) zones or five Class A (Style D) zones. The GWCZM-400 con-nects to the control panel via the panel SBUS and is supervised and power limited.Up to two zone expanders can be used per panel. Mounts in FACP or into a GWCAB400-A accessory cabinet.GWIOM-410This status display module provides out-puts and control functions for remote annunciation of alarm, trouble, and supervi-sories for each zone. The system can supervise up to eight GWIOM-410 status display modules. Mounts in FACP or into a GWCAB400-A accessory cabinet.GWRAN-400 The GWRAN-400 remote annunciator canperform all system control operations. It also provides trouble and alarm information and can be used for programming. The FACP can support up to four GWRAN-400remote annunciators. Mounts in dual gang electrical box.GWCAB400-A This accessory cabinet is used for mount-ing GWCZM-400 zone expander and/or GWIOM-410 status display module.GWPLEX-2GA This door option combines a dead-frontpanel with a clear bicarbonate window to limit access to the control panel. Used for jurisdictions where single button operation is required.SpecificationsAC Power 120 VAC, 60Hz, 3 ABatteryMax. charging circuit: 27.4 VDC@ 0.75AMax. charger capacity: 33 Ah(two 18Ah batteries fit inside FACP)Operating Power 24 VDC operating voltage Total DC Load6 AInitiating Device Circuits (IDC)(2-wire smoke): 17.5- 27.4 VDCAlarm current draw (panel): 460 mA Short circuit current: 95 mA maximum Standby current draw (panel): 140 mA Maximum impedance: 50 ohms Accessory Power 27.4 VDC, 1 ANotification Circuits (NAC)27.4 VDC, 3 A max/output (6 A total)Maximum line impedance: 1.5 ohm Programmable 2.5 A, 24 VDC (inductive), 5 A, 24 VDC Relays (resistive), non-power limited Operating Range32° F to 120° F (0° C to 49° C)Flex 410 Cabinet 26 3/8" x 17 3/16" x 4" (67 x 44 x 10 cm)(H x W x D)Accessory Cabinet10 3/8" x 10 3/16" x 3" (26 x 26 x 8 cm)Ordering InformationPart NumberDescriptionGWF410Flex 410 FACP , 10 zones, expandable to 20 and 30 zones, 120 VAC GW151321Flex 410 Installation & Operation ManualOptions:GWCZM-400Zone expander module; adds 10 Class B or 5 Class A circuitsGWIOM-410Input / output relay, supervisory status moduleGWRAN-400Remote annunciator for Flex 410 GWCAB400-A Accessory cabinet for mounting GWCZM-400 or GWIOM-410GWPLEX-2GA Dead-front door with Plexiglas window SP400SmartProgram 400 for remoteprogramming of the Flex 410 using a PC (available only to authorized distributors at ESD extranet)。
高频开关电源模块
高频开关电源模块技术手册石家庄福润新技术有限公司版权所有目录第一章概述 (3)一、简述 (3)二、模块主要特点 (3)三、型号命名 (4)四、技术指标 (4)第二章使用环境 (5)第三章模块构成 (5)一、模块的工作原理 (5)二、模块外观及外形尺寸 (6)三、模块安装 (7)四、操作说明 (11)第一章概述一、简述●我公司自主研发的FRDZ系列智能型高频开关电源，是专为电力系统设计，具有“四遥”功能的高频开关电源，模块采用世界领先的“谐振电压型双环控制的谐振开关电源技术”，具有体积小、重量轻、效率高、可靠性高等优点。
产品包括220V多个型号，配有标准RS-485接口，易于与自动化系统对接，适用于各类变电站、发电厂及水电站。
●我公司第三代（-3型）产品采用了LED数码管显示，进一步提高了产品的可靠性和美观性。
我公司-3型产品主要有以下型号：模块型号额定电压（V）额定电流（A）冷却方式外形尺寸（深×高×宽mm）FRDZ220D05Z-3 220 5 自然冷却260×179×109FRDZ220D07Z-3 220 7 自然冷却325×230×130FRDZ220D10Z-3 220 10 自然冷却325×230×130FRDZ220D20Z-3 220 20 自然冷却400×323×146二、模块主要特点●效率高，模块效率可达到95%~96%。
●重量轻，体积小。
●采用“三相无源功率因数校正电路”，输入无中线，功率因数可达0.94。
●采用隔离自主均流，并机不均流度＜±3%，可保证二十台以上模块良好并机。
●模块内置直流输出隔离二极管，用户无需外设。
●模块具有RS-485接口，方便接入自动化系统进行通信。
●模块为LED数码管显示，分别设置显示切换按钮、手动调压按钮、拨码开关，操作简单。
●输出过压保护：内置过压保护电路，出现过压后模块自动锁死，模块故障指示灯亮，故障模块自动退出工作，不影响整个系统正常运行；过压保护点：220V模块为320V±5%，110V模块为160V±5%。
PXG4微控制器说明书
SPECIFICATIONSFEATURESMICRO-CONTROLLER X (48 × 48 mm)PXG4 is a compact size temperature controller of front panel size 48 × 48 mm. To cope with any of versatile uses as a temperature controller, it has many input/output points and sophisticated control functions.1.Wide variety and number of input / output1.Digital input: Up to 2 points (Up to 3 points for motor-ized valve control)2.Digital output: Up to 3 points3.Control output: 4 typesRelay contact, SSR drive, voltage linear, current linear 4.Universal inputs: Thermocouple, resistance bulb, cur-rent, voltage, mV linear 5.Remote SV input function6.Analog re-transmission output function (for current or voltage)7.Motorized valve control outputer interface of easy-to-see indication and easy-to-use operation method1.Easy-to-see, large display section2.Parameters grouped by functionser key to which you can assign a function4.Password function provided for avoiding wrong opera-tion and protecting settings5.Front water-proof structure (IP66 in corformity)3.Advanced control functions to meet various applications 1.Sampling cycle 200 ms2.Input indication accuracy ± 0.3%FS3.Manual control function4.Control method selectable out of 8 different types:ON/OFF control, PID control, fuzzy PID control, self-tuning control, PID2 control, motorized valve control (without PFB input)5.Heating/cooling control selectable6.Auto tuning function4.A variety of functions extending the possibility of tem-perature controller1.Guarantee soak function provided, 16 step ramp/soak function2.8 PID setting pallets, 8 SV pallets capable of frequent change of control3.Soft start function that limits MV output when start-ing up4.Ramp SV function enables graduate change of SV5.Loop burnout alarm, heater burnout alarm and various event outputs are available in digital output (option)6.Control standby function7.Loader interface (RS-232C) standard provided 8.RS485 communication (option)1. General Specifications(1)Power supply :100 V ( - 15%) to 240 V (+ 10%) AC,50/60 Hz24 V (± 10%) DC. 24 V (± 10%) AC,50/60 Hz.(2)Power consumption:12 VA MAX.(3)Insulation resistance:20 M Ω MIN. (at 500 V DC)(4)Withstand voltage:Power source ⇔ all terminals1500 V AC for 1 minRelay contact output ⇔ all terminals1500 V AC for 1 minBetween others 500 V AC for 1 min(5)Approvals and certification:UL(UL873), C-UL(CSA C22.2 No.24-93 or equivalent), CE mark(LVD : EN61010-1,EMC : EN61326-1)PX seriesdigital temperature controller 2. Input section2.1 Process value input(1)Number of inputs :1 point(2)Input setting:Programmable scale(3)Input signal:See Table 1 (thermocouple, resistancebulb, mV, voltage, current (With external 250Ω resistance) universal input)(4)Standard measurement range and input type:See Table 12(5)Indication accuracy (at Ta = 23˚C) :•Thermocouple input: ± 0.3%FS ± 1 digit± 1˚C or ± 2˚C, whichever greater*except:Thermocouple B, 0 to 400˚C± 5%FS ± 1 digit ± 1˚CThermocouple R, 0 to 500˚C±1%FS ± 1 digit ± 1˚CThermocouple T, -200 to 0˚C±0.5%FS± 1 digit ± 1˚C•Resistance bulb input: ± 0.3%FS ± 1digit or ± 0.5˚C, whichever greater•mV input, voltage input, current input:± 0.3%FS ± 1 digit(6)Indication accuracy by change of temperature:± 0.3%FS/10˚C(7)Indication resolution:See Table 1(8)Input sampling cycle:200 ms(9)Input impedance:• Thermocouple, mV input: 1 MΩ MIN.• Current input: 250 Ω• Voltage input: About 1 MΩ(10) Variation by signal source resistance:• Thermocouple, mV input: ± 0.3%FS ±1 digit per 100 Ω• Voltage input: ± 0.3%FS ± 1 digit per500 Ω(11) Allowable wiring resistance:• Resistance bulb: 10 Ω MAX. (per wire)(12) Allowable input voltage:• DC voltage input: Between +35 and- 10 V• Current input: Within ± 25 mA• Thermocouple, resistance bulb, mV in-put: Within ± 5 V(13) Noise rejection ratio:• Normal mode: 40 dB (50/60 Hz)• Common mode: 120 dB (50/60 Hz)From ground, at 220 V AC, 50/60 HzBetween input and output, at 220 V AC,50/60 Hz(14) Input correction:(a)User adjustment: Zero point, span± 50%FS for each(b)Process value shift: ± 10%FS(c)Input filter: 0.0 to 120.0 sec (filter OFFif set at 0.0)(15) Overrange, underrange:Beyond range of -5 to 105% (accuracynot guaranteed between -5 and 0, and be-tween 100 and 105%FS)2.2 Auxiliary analog input (remote SV input)(1)Number of inputs:Up to 1 point(2)Input signal:Voltage, 0 to 5 V DC /1 to 5 V DC(3)Input impedance:About 1 MΩ(4) Sampling rate:800ms2.3 Heater current detector (CT) input(1)Input type:Single phase CT Up to 1 pointFor 1 to 30 A: CTL-6-S-HFor 20 to 50 A: CTL-12-S36-8F(2) Range of detected current:1 to 50A(3)Detected current accuracy:Setting ± 10%FS(4)Detected current resolution:0.1 A(5)ON time necessary for detection:800 ms MIN.2.4 Digital input (DI)(1) Number of points:Up to 2 points (up to 3 points for motor-ized valve control output)(2)Specifications:No-voltage contact or transistor input(3)Contact capacity:30 V DC, about 3 mA (per point)(4)Input judgment:ON assumed at 1 kΩ or lower (contact) or5 V DC or lower (transistor)OFF assumed at 100 kΩ or higher (con-tact) or 18 V DC or higher (transistor)(5)Sampling pulse width:200 ms MIN.(6)Functions:Remote mode selection, SV changeover,control standby, AT startup, timer startup,alarm unlatch, Program selection, start /stop / reset, PID switching (normal/re-verse), etc.3. Output section3.1 Control output(1)Number of points:Up to 2 points (2 points: Heating/coolingcontrol)(2)Type:selected out of [1] to [5] below[1]Relay contact output•Proportional cycle: 1 to 150 sec•Contact structure: 1 NO (SPST) con-tact• Contact capacity:220 V AC/30 V DC, 3 A (resistiveload)220 V AC/30 V DC, 1 A (inductiveload)•Minimum ON/OFF current: 100 mA(24 V DC)•Mechanical life: 20 million operationsMIN. (100 operations/min)•Electrical life: 100,000 operationsMIN. (rated load)[2]SSR/SSC drive output•Proportional cycle: 1 to 150 sec•ON voltage: 20 V DC (18 to 24 V DC)•OFF voltage: 0.5 V DC or lower•Maximum current: 20 mA DC (foreach of outputs 1 and 2)•Load resistance: 850 Ω MIN.[3]Current output (0 to 20 mA DC/4 to20 mA DC)•Accuracy: ± 5%FS•Linearity: ± 5%FS•Load resistance: 600 Ω MAX.[4]Voltage output (0 to 5 V DC/1 to 5 VDC/0 to 10 V DC/2 to 10 V DC)•Accuracy: ± 5%FS•Linearity: ± 5%FS•Load resistance: 10 kΩ MIN.3[5]Motorized valve control output•Contact structure: 2 NO (SPST) con-tacts•Contact capacity: 220 V AC/30 V DC,1 A•Minimum ON/OFF current: 100 mA (24 V DC)•Mechanical life: 20 million operations MIN. (100 operations/min)•Electrical life: 100,000 operations MIN. (rated load)•Output interlock: Unavailable3.2 Digital output (DO)(1)Number of outputs:Relay contact outputUp to 3 points (shared common)Up to 2 points (independent common)(2)Output specifications:Relay contact outputContact structure: 1 NO (SPST) con-tactContact capacity: 220 V AC/30 V DC, 1AMinimum Open/Close current: 100 mA (24 V DC)Mechanical life: 20 million operations MIN.(100 operations/min)Electrical life: 100,000 operations MIN.(rated load)(3)Output functions:Alarm output (see "Alarm function")Main unit control mode output, program status output, etc.(4)Output cycle:200ms3.3 Auxiliary analog output (re-transmission output)(1)Number of points: Up to 1 point (2)Type:Current/voltage output (0 to 20 mA DC/4to 20 mA DC/0 to 5 V DC/1 to 5 V DC/0 to 10 V DC/2 to 10 V DC)•Guaranteed output range: 0 to 20.6 mA DC/0 to 10.3 V DC•Accuracy: ± 0.2%FS (± 5%FS at 1 mA or smaller)•Linearity: ± 0.2%FS (± 5%FS at 1 mA or smaller)•Resolution: 5000 MIN.•Load resistance:600 Ω MAX. (current)10 k Ω MIN. (voltage)(3)Output cycle:200 ms (4)Output contents:PV, SV, DV, MV(5)Additional function:Scaling function(6)Limitation:Not selectable when using control output 24. Indication/setting section4.1 Display unit(1)Type:LED (2)Indication contents:Process value indication: 7 segments, 4digits [red]Setpoint indication: 7 segments, 4 digits [green]Indication status: 6 indicator lamps4.2 Setting section(1)Type:Sheet type keys (with emboss)(2)Number of keys: 4 keys.SEL ,,plus user functionkey5. Control functions5.1 Control types(1)2-position control (set parameter P to 0%)(2)PID control (fuzzy PID included)•PID parameters determination: Auto tuning,Selftuning(3)PID dual (heating, cooling) function (fuzzy PID included)•PID parameters determination: Auto tuning(4)Motorized valve control (servo) without position feed-back•Full stroke time: 30 sec MIN.5.2 Control parameters•Proportional band (P):0.0 to 999.9%. 2-position control when P = 0.•Integral time (I):0 to 3200 sec. Integral time control in-validated when I = 0.•Differential time (D):0.0 to 999.9 sec. Differential time con-trol invalidated when D = 0.•Control cycle:200 ms •Anti-reset windup:0 to 100% of measurement range•Hysteresis band:50% of measurement range (at 2-posi-tion control only)•Number of SV and PID combinations:8 combinations.Changed by any of parameter setting,digital input, communication and user function keying5.3 Control mode(1)Mode type:Auto, Manual, Remote(2)Mode changeover:Auto ↔Manual: Balanceless · bumpless Auto/Manual →Remote: Balance ·bumplessAuto/Manual ←Remote: Balance ·bumpless47. Communication function7.1 RS-485 interface(1)Number of points: 1 point(2) Physical specifications: EIA RS485(3)Protocol:Modbus-RTU(4)Communication method:Half duplex bit serial, Asynchronous com-munication(5)Code type:Data length 8 data bits. Parity ... Odd,even, none.(6)Communication rate:9600 bps, 19200 bps(7)Connection status:Up to 32 units connectable including multi-drop master function(8)Communication distance:Up to 500 m (total connect extension)•Memory protection:Protect by non-volatile memory9. Self-diagnosis•Method:Program error supervision by watchdogtimer10. Operation and storage conditions(1)Operating ambient temperature:-10 to 50˚C(2)Storage temperature:-20 to 60˚C(3)Operating/storage ambient humidity:90%RH MAX. (no condensing)(4)Warm-up time:30 min MIN(5)Vibration:10 to 70 Hz, 9.8 m/s2 (1 G) MAX.(6)Impact:49 m/s2 (5 G) MAX.11. Structure(1)Mounting method:Mounted with panel(2)External terminals:Screw terminals, M3(3)Case:•Material: ABS, and degeneration PPO•Non-combustibility grade: UL94V-0equivalent•Color: Black(4)Protection structure:•Panel front side: IP66, NEMA-4X equiva-lent (if panel is mounted using ourgenuine packing. Not water-proof ifmounted closely together.)•Body: IP20 equivalent (slits on top andbottom)•Terminals: IP00 equivalent. Terminalcover can be mounted optionally.(5)Dimensions:48 (W) × 48 (H) × 80 (D) mm(6)Mass:About 200 g12. Scope of delivery•Controller: 1 unit•Instruction manual: 1 copy•Panel mounting frame:1 pc•Water-proof packing: 1 pc•Shunt resistor: 1 pc•Unit nameplate: 1 pc13. User customize function13.1 Program (ramp/soak) function(1) Number of program steps:16 steps × 1 pattern,8 steps × 2 patterns, or4 steps × 4 patterns(1 step = 2 segments)(2) Control option:Control by digital inputStatus output by digital output(3) Basic function:[1]Segment time can be set in "Hour,Minutes" or "Minutes, Seconds"[2]Guarantee soak[3]Repeat action[4] PV start[5] Delay start[6] Power failure restoring function(4) Memory backup:EEPROM13.2 User functions•Pressing the user key can perform Auto/Manual change,Standby ON/OFF change, remote SV change, ramp/soakchange or other function as assigned13.3 Password function•3 level password function8. Processing at power failure6. Alarm function6.1 Number of alarm setting points•Up to 3 points (depends on number of DO)6.2 Alarm type•Process value (upper limit/lower limit, absolute/devia-tion, range), main unit error, etc.(non-excitation, delay, latch, timer function option provided)6.3 Heater burnout alarm function(1)Detectable range:1 to 50 A(2)Detected current resolution:0.1 A(3)Setting resolution:0.1 A(4)Hysteresis:0.0 to 50.0 ACODE SYMBOLSStandard typeNote 1:If output 1 was for current or voltage output, option cannot be assigned to CT1.(If 7th digit was assigned to G or J, 5th digit cannot be assigned to E nor P.)Note 2:If output 2 was for relay contact, SSR drive, current, voltage or retransmission output, 3 digitaloutputs cannot be assigned.(If 6th digit was assigned to A, C, E, P, R or S, 9th digit cannot be assigned to M.)Note 3:If CT1 was selected in option 1, None in <Digital output> cannot be assigned.(If 7th digit was assigned to G or J, 9th digit cannot be assigned to 0.)Note 4:If RSV1 in option 1 and digital input 1 were selected simultaneously, output 2 cannot be assigned.(If 7th digit was assigned to F or 2, 6th digit cannot be assigned to A, C, E, P, R nor S.)56CODE SYMBOLSNote 1:If front panel size is 48 × 48, position feedback input (PFB input) function is not available.OPTIONALLY ITEMSInstruction manual for communication function RS485 (Modbus)Type:INP—TN514450—E Current detector for heater burnout alarm (CT) 1 to 30A Type:ZOZ *CCTL—6—S—H20 to 50A Type:ZOZ *CCTL12—S36—8F Rear terminal cover Type:ZZPPXR1—A230Shunt resistor 250Ω±0.1%Type:ZZPPXR1—A190PC loader communication cable Type:ZZP PXH1 *TK4H45637TABLE 1*Input a DC current to 1 to 5 V DC or 0 to 5 V DC range via external resistor of 250 Ω.*Input type and ranges arestandardly factory set as follows.K: 0 to 400˚CPt, JPt: 0 to 150˚CVoltage, current: 0 to 100%Standard input type is thermocouple K.[1] Unit of temperature: ˚C[2] Unit of temperature: ˚F8OUTLINE DIAGRAM (Unit : mm)Mass about 0.2 kg+0.5+.5+0.5Mounting frame Terminal sectionPanel cutout size Side stick mounting (n units)(water-proof property is lost in this case)No.713-187-121-6+.59OPTIONALLY ARRANGED ARTICLESHeater current detector (CT). Specification : 1 to 30 A . Type : CTL-6-S-H. Specification : 20 to 50 A. Type :CTL-12-S36-8FNote 1) Detection is available only for single phase heater.Note 2) Unusable for heater control by thyristor phase angle control.10EXTERNAL CONNECTION DIAGRAM Standard type1518 Note 1 : Connect the furnished resistor to and11Motorized valve control type1518Note 1 : Connect the furnished resistor to andISOLATED BLOCK DIAGRAMInternal CircuitProcess value inputAuxiliary analog input (remote SV input)Heater current detector input: Basic insulation (1500 V AC): Functional insulation (500 V AC): Non-insulationControl output 1 (SSR drive, current, voltage)Digital inputCommunication (RS485)Control output 2(SSR drive, current, voltage)orauxiliary analog output (re-transmission output)Power supplyControl output 1 (relay contact)orOPEN outputControl output 2 (relay contact)orCLOSE outputDigital output 1 (relay contact)Digital output 1 to 3 (relay contact)Digital output 2 (relay contact)When the 9th digit of thecode symbols = J(DO1, 2 independent common)When the 9th digit of the code symbols = Other than J(DO1 to 3 shared common)。
英飞凌F3L400R12PT4中英文说明书
VCES = 1200V IC nom = 400A / ICRM = 800A 典型应用 • 太阳能应用 • UPS系统 电气特性 • 提高工作结温Tvjop • 低开关损耗 • 低VCEsat • 沟槽栅IGBT4 • Tvjop=150°C • VCEsat带正温度系数 机械特性 • 绝缘的基板 • 紧凑型设计 • PressFIT压接技术 • 标封装 TypicalApplications • SolarApplications • UPSSystems ElectricalFeatures • ExtendedOperationTemperatureTvjop • LowSwitchingLosses • LowVCEsat • TrenchIGBT4 • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • IsolatedBasePlate • Compactdesign • PressFITContactTechnology • StandardHousing
ModuleLabelCode
BarcodeCode128 ContentoftheCode
ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWformation
IGBT-模块 IGBT-modules
F3L400R12PT4_B26
初步数据 PreliminaryData
IGBT,T1/T4/IGBT,T1/T4
集电极－发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极－发射极峰值电压 Gate-emitterpeakvoltage
BFP420F中文资料
NPN Silicon RF TransistorFor high gain low noise amplifiersSmallest Package 1.4 x 0.8 x 0.59mmNoise figure F = 1.1 dB at 1.8 GHzoutstanding G ma = 20 dB at 1.8 GHzTransition frequency f T = 25 GHzGold metallization for high reliabilitySIEGET 25 GHz f T - LineESD: E lectro s tatic d ischarge sensitive device, observe handling precaution!Type Marking Pin Configuration Package BFP420F AMs 1 = B 2 = E 3 = C 4 = E TSFP-4 Maximum RatingsParameter Symbol Value Unit Collector-emitter voltage V CEO 4.5V Collector-base voltage V CBO15Emitter-base voltage V EBO 1.5Collector current I C35mA Base current I B3P tot160mW Total power dissipationT S 111°C1)Junction temperature T j150°C Ambient temperature T A-65 (150)Storage temperature T stg-65 (150)Thermal ResistanceJunction - soldering point2)R thJS 240K/W1TS is measured on the emitter lead at the soldering point to the pcb2For calculation of RthJA please refer to Application Note Thermal ResistanceElectrical Characteristics at T A = 25°C, unless otherwise specified.Parameter Symbol Values Unitmin.typ.max.DC characteristicsV(BR)CEO 4.55-V Collector-emitter breakdown voltageI C = 1 mA, I B = 0I CBO--200nA Collector-base cutoff currentV CB = 5 V, I E = 0I EBO--35µA Emitter-base cutoff currentV EB = 1.5 V, I C = 0h FE5080150-DC current gainI C = 20 mA, V CE = 4 VAC characteristics (verified by random sampling)f T1825-GHz Transition frequencyI C = 30 mA, V CE = 3 V, f = 2 GHzC cb-0.150.3pF Collector-base capacitanceV CB = 2 V, f = 1 MHzC ce-0.33-Collector-emitter capacitanceV CE = 2 V, f = 1 MHzC eb-0.5-Emitter-base capacitanceV EB = 0.5 V, f = 1 MHzF- 1.1-dB Noise figureI C = 5 mA, V CE = 2 V, Z S = Z Sopt ,f = 1.8 GHzG ma-20-Power gain, maximum available 1)I C = 20 mA, V CE = 2 V, Z S = Z Sopt , Z L = Z Lopt ,f = 1.8 GHz|S21|2-17-Insertion power gainI C = 20 mA, V CE = 2 V, f = 1.8 GHz,Z S = Z L = 50IP3-24-dBm Third order intercept point at output2)I C = 20 mA, V CE = 2 V, Z S=Z L=50 ,f = 1.8 GHzP-1dB-10.5-1dB Compression point at output3)I C = 20 mA, V CE = 2 V, f = 1.8 GHz,Z S=Z L=501Gma = |S21 / S12| (k-(k2-1)1/2)2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1MHz to 6GHz.3DC current no input powerSPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :Transistor Chip Data NF = 1.2432-ISE =19.049fA NR = 1.3325-ISC =0.019237fA IRB =0.72983mARC =0.10105 MJE =0.46576-VTF =0.23794V CJC =234.53fF XCJC =0.3-VJS =0.75V EG = 1.11eV TNOM300KBF =72.534-IKF =0.48731A BR =7.8287-IKR =0.69141ARB =8.5757RE =0.31111VJE =0.8051V XTF =0.42199-PTF =0deg MJC =0.30232-CJS =0F XTB =0-FC =0.73234-IS =0.20045fA VAF =28.383V NE = 2.0518-VAR =19.705V NC = 1.1724-RBM = 3.4849 CJE = 1.8063fF TF = 6.7661ps ITF =1mAVJC =0.81969V TR = 2.3249ns MJS =0-XTI =3-C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :IS = 3.5fA RS =10N =1.02-All parameters are ready to use, no scaling is necessaryPackage Equivalent Circuit:L BI = 0.42nH R LBI =0.15L EI = 0.26nH R LEI =0.11L CI = 0.35nH R LCI =0.13K CI-EI =-0.05-K BI-CI =-0.08-K BI-EI =0.20-L BO =0.22nH L EO =0.28nH L CO =0.22nH K BO-EO =0.10-K BO-CO =0.01-K EO-CO =0.11-C BE =34fF C BC =2fF C CE =33fFValid up to 6GHzThe TSFP-4 package has two emitter leads. To avoid high complexity of the package equivalent circuit,both leads are combined in one electrical connection.R LxI are series resistors for the inductances L xI and K xa-yb are the coupling coefficients between the inductances L xa and L yb . The referencepins for the coupled ports are B, E, C, B`, E`, C`.For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet:/silicondiscretesFor non-linear simulation:Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.If you need simulation of the reverse characteristics, add the diode with the C'-E'- diode data between collector and emitter.Simulation of package is not necessary for frequencies < 100MHz.For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model.Note:This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation.EHA07307CBTransistor Schematic DiagramThe common emitter configuration shows the following advantages:Higher gain because of lower emitter inductance.Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe.Please note, that the broadest lead is the emitter lead.。
IRG4PC40UD中文资料
UltraFast 600V
G E
VCE(on) typ. = 1.72V
@VGE = 15V, IC = 20A
n-ch an nel
Benefits
• Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
Max.
600 40 20 160 160 15 160 ± 20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m)
Units
V
A
V W
°C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
M-AUDIO_410中文说明书解析
M-AUDIO FireWire410中文说明书1．FireWire410 简介FireWire410 是一个4 进10 出音频接口，它通过IEEE-1394 端口（俗称"火线"）与计算机进行连接。
如果你的计算机没有火线端口，只需向计算机经销商购买一块PCI 的火线卡，便能与FireWire410 连接。
笔记本电脑通常都自备火线端口。
FireWire410 包装内带一条高质量的六针到六针1394 数据线，建议你使用它或相同品质的火线与电脑连接。
如果电脑上只有四针火线接口，则需购买一条六针到四针的1394 数据线。
另外需指出，FireWire410 使用六针的端口自供电，若使用四针的火线口，需要为FireWire410 提供外部电源。
提示：火线口即是1394 口，在Sony 设备中又称iLink 口。
FireWire410 提供两个卡侬和大三芯的复合模拟输入口，可以连接话筒，也可接电吉它、电贝司等乐器；八个大三芯模拟输出口及一对S/PDIF 的同轴、光纤输入/输出。
FireWire410 提供了高品质模拟、数字输入输出，支持24 比特的采样精度、96kHz 录音采样频率和192kHz 输出采样频率，S/PDIF 端口支持AC3 和DTS 双编码。
FileWire410 还提供了一进一出MIDI 端口，并有开关选择MIDI 输出或是旁通，可作为独立MIDI 接口使用。
FireWire410 具有简捷实用的软件控制系统，提供了跳线和调音台控制功能，为音频软件虚拟了10 个输出通道。
你可任意分配输入端口到输出端，每个内部通道又支持具有超大控制幅度的辅助发送。
FireWire 还提供了零延迟硬件直接监听和基于ASIO 的超低延迟软监听；具有两个独立的耳机监听输出，信号来源可选择，并有独立增益控制；两个麦克风/乐器功放提供了电平控制和监测功能、48V 幻像电源、20dB 衰减和最大66dB 的增益。
F404中文资料
Flex 404 Four-Zone FACP CS-2404 09/01/06Page 1 of2DescriptionThe Gamewell Flex 404 Fire Alarm Control Panel brings the latest in mi-croprocessor technology to conven-tional fire controls. The Flex 404 is compatible with the new i³ ™ smoke detectors from System Sensor, and provides advanced features including drift compensation, maintenance alert,and freeze warning. Automatic syn-chronization of audio/visual devices is provided, selectable for three manufac-turers’ protocols. The NAC protocol in-cludes the ability, using a single pair of wires, to silence audible deviceswhile strobes continue to flash.The Flex 404 is also compatible with conventional input devices such as two-and four-wire smoke detectors, pull stations, waterflow devices, tamper switches and other normally-open contact devices.OperationThe activation of a compatible smoke detector or any normally-open fire alarm initiating device will: activate audible and visual signaling devices, illuminate an indicating LED, sound the piezo sounder at the FACP , activate the FACP alarm relay, and operate an optional module which notifies a remote station or initiates an auxiliary control function.i³™ Technology Features•Drift compensation automatically adjusts detector sensitivity and increases resistance to false alarms caused by dust accumulation.•The maintenance alert LEDs (per zone) warn of excessive dirt accumulation,preventing false alarms.•Detector sensitivity is automatically measured. The twice-yearly test require-ments of NFPA 72 (7-3.2.1) are met without using a ladder or test meter.•The wireless handheld sensitivity meter eliminates the need for voltmeters,magnets, or a physical connection to the detector. The reader displays sensi-tivity in terms of percent-per-foot obscuration and provides text status indica-tion.•The supervisory LED (per zone) provides a warning if a detector senses tem-peratures approaching freezing.•Special test protocol and LED indication allow a quick test of all detectors —without a ladder.•Electronic heat-sensing element provides thermal detection in addition to pho-toelectronic smoke detection.Features•Four Style B (Class B) Initiating Device Circuits (IDCs); two Style Y (Class B) Notification Appliance Circuits (NACs); optional module (P/N CAC-4) converts 4 IDCs and two NACs to Class A. 24 VDC.•NAC synchronization features:–Provides synchronization of standard ANSI audible signals as required by NFPA 72(3-8.4.1.2.3).–Provides synchronization of ADA compliant strobes per NFPA 72 (4-4.4.1).–Selectable for System Sensor, Cooper-Wheelock,& Gentex protocols.–Selective Silence feature allows manual silencing of horns while strobes continue to flash on the same NAC.•Silent or A udible Walk Test operation mode commanded from the front keypad, with automatic return to normal after one hour of inactivity.•Alarm verification selectable per zone.•Each zone may be programmed for supervisory or fire; each zone has separate red and yellow LEDs.•Disable switches provided for each zone.•NACs programmable for: Silence Inhibit, Auto Silence, Strobe Synchronization, Selective Silence (horn/strobe mute), Temporal orSteady signal, Silenceable or Nonsilenceable.•Form-C Alarm, Trouble, and Supervisory relays.• 3.0 A (6.0 A with optional second transformer)total usable current.•Piezo sounder for alarm, trouble, supervisory,and maintenance.•Control buttons: ACK (Acknowledge), A larm Silence, Reset, Walktest, Zone Enable/Disable (one per zone).•LED indicators: Fire Alarm (one per zone),Supervisory (one per zone), Trouble (one per zone), Maintenance (one per zone), AC Power, NAC Disable, Zone Disable, NAC Fault, System Trouble, Power Trouble,Walktest, Alarm Silence, Earth Fault (on circuit board), Battery Fault (on circuit board),Charger Fault (on circuit board).•Optional dress panel (P/N DP-FLEX ).•Optional modules: plug-in transmitter module (P/N 4XTMF ); plug-in zone relay module (P/N 4XZMF ); transmitter module (P/N4XLMF ) for SAN-404 remote LED annuncia-tor.ListingsListings and approvals below apply to the basic Flex 404 panel. In some cases, certain modules may not be listed by certain approval agencies, or listing may be in process.Consult factory for latest listing status.•UL Listed: file S521.•CSFM approved: file 7165-1288:180.•MEA approved: file 366-04-E.Flex 404Four-Zone Fire Alarm Control Panelg 2404p h 1.j pgFlex 404 Four-Zone FACP CS-2404 09/01/06Page 2 of 2Specifications and wiring information are provided for information only and are believed to be accurate. Gamewell-FCI assumes no responsibility for their use.Data and design are subject to change without notice. Installation and wiringinstructions shipped with the product shall always be used for actual installation. For more information, contact Gamewell-FCI. Gamewell-FCI 12 Clintonville Road Northford, CT 06472-1610Phone: 203-484-7161Fax: A Honeywell Company© 2006 Gamewell-FCIBackbox MountingThe cabinet can be surface-mounted. The door is removable during installation by opening and lifting it off the hinges. The cabinet mounts using two key slots at the top of the backbox and two additional 0.250" diameter holes at the bottom.Ordering InformationF404Four-zone conventional FACP .XRM-24120 VAC, 100 VA transformer, expands NAC power from 3.0to 5.0 Amps.CAC-4Class A converter module. Used to convert Style B (Class B) IDC to Style D (Class A) and Style Y (Class B) NAC to Style Z (Class A). The module connects to J1 on the Flex 404 circuit board.4XTMF Transmitter module.4XLMF LED interface module, supports SAN-404.4XZMF Zone relay module.411UDFour-input (channel) 411UD dual-line Digital Alarm Commu-nicator/Transmitters, which can be used as slave communi-cators with Flex 404.PRO-411Programmer used with 411UD.SAN-404Remote annunciator (RZA-4XF), mounts in a single-gang box.BB-17F Battery box, required to house two batteries greater than 7AH, to a maximum of 18 AH.DP-FLEX Dress panel.TR-1-R Trim ring for semi-flush mounting.52194Flex 404 Installation and Maintenance Manual.i³™ is a trademark and Gamewell® is a registered trademark of Honeywell International Inc.。
IRFPC40PBF中文资料
Power MOSFETIRFPC40, SiHFPC40Vishay SiliconixFEATURES•Dynamic dV/dt Rating •Repetitive Avalanche Rated •Isolated Central Mounting Hole •Fast Switching •Ease of Paralleling •Simple Drive Requirements •Lead (Pb)-free AvailableDESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 50 V, starting T J = 25 °C, L = 16 mH, R G = 25 Ω, I AS = 6.8 A (see fig. 12).c.I SD ≤ 6.8 A, dI/dt ≤ 80 A/µs, V DD ≤ V DS , T J ≤ 150 °C.d. 1.6 mm from casePRODUCT SUMMARYV DS (V)600R DS(on) (Ω)V GS = 10 V1.2Q g (Max.) (nC)60Q gs (nC)8.3Q gd (nC)30ConfigurationSingleTO-247GDSORDERING INFORMATIONPackage TO-247Lead (Pb)-free IRFPC40PbF SiHFPC40-E3 SnPbIRFPC40SiHFPC40ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS600VGate-Source Voltage V GS ± 20 Continuous Drain Current V GS at 10 VT C = 25 °C I D6.8A T C = 100 °C4.3Pulsed Drain Current a I DM 27Linear Derating Factor1.2W/°C Single Pulse Avalanche Energy b E AS 410mJ Maximum Power Dissipation T C = 25 °CP D 150WPeak Diode Recovery dV/dt cdV/dt 3.0V/ns Operating Junction and Storage Temperature Range T J , T stg- 55 to + 150°C Soldering Recommendations (Peak Temperature)for 10 s 300d Mounting Torque6-32 or M3 screw10 lbf · in 1.1N · m * Pb containing terminations are not RoHS compliant, exemptions may apply元器件交易网IRFPC40, SiHFPC40Vishay SiliconixNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSARAMETER SYMBOL TY.MAX.UNIT Maximum Junction-to-Ambient R thJA -40°C/WCase-to-Sink, Flat, Greased Surface R thCS 0.24-Maximum Junction-to-Case (Drain)R thJC-0.83元器件交易网元器件交易网Vishay SiliconixIRFPC40, SiHFPC40 Vishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward Voltage元器件交易网IRFPC40, SiHFPC40Vishay SiliconixFig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case元器件交易网IRFPC40, SiHFPC40Vishay SiliconixFig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test Circuit元器件交易网IRFPC40, SiHFPC40Vishay SiliconixFig.14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?91240.元器件交易网Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。
R5F21245SNFP资料
R8C/24 Group, R8C/25 GroupSINGLE-CHIP 16-BIT CMOS MCU1.OverviewThese MCUs are fabricated using a high-performance silicon gate CMOS process, embedding the R8C/Tiny Series CPU core, and are packaged in a 52-pin molded-plastic LQFP or a 64-pin molded-plastic FLGA. It implements sophisticated instructions for a high level of instruction efficiency. With 1 Mbyte of address space, they are capable of executing instructions at high speed.Furthermore, the R8C/25 Group has on-chip data flash (1 KB x 2 blocks).The difference between the R8C/24 Group and R8C/25 Group is only the presence or absence of data flash. Their peripheral functions are the same.1.1ApplicationsElectronic household appliances, office equipment, audio equipment, consumer products, etc.REJ03B0117-0300Rev.3.00Feb 29, 20081.2Performance OverviewTable 1.1 outlines the Functions and Specifications for R8C/24 Group and Table 1.2 outlines the Functions and Specifications for R8C/25 Group.NOTES:1.I 2C bus is a trademark of Koninklijke Philips Electronics N. V.2.Specify the D version if D version functions are to be used.Table 1.1Functions and Specifications for R8C/24 GroupItem SpecificationCPU Number of fundamental instructions89 instructionsMinimum instruction execution time 50 ns (f(XIN) = 20 MHz, VCC = 3.0 to 5.5 V)100 ns (f(XIN) = 10 MHz, VCC = 2.7 to 5.5 V)200 ns (f(XIN) = 5 MHz, VCC = 2.2 to 5.5 V)Operating mode Single-chip Address space 1 Mbyte Memory capacity Refer to Table 1.3 Product Information for R8C/24 GroupPeripheral Functions Ports I/O ports: 41 pins, Input port: 3 pins LED drive ports I/O ports: 8 pinsTimers Timer RA: 8 bits × 1 channelTimer RB: 8 bits × 1 channel(Each timer equipped with 8-bit prescaler)Timer RD: 16 bits × 2 channels(Input capture and output compare circuits)Timer RE: With real-time clock and compare match functionSerial interfaces 2 channels (UART0, UART1)Clock synchronous serial I/O, UARTClock synchronous serial interface 1 channel I 2C bus Interface (1)Clock synchronous serial I/O with chip selectLIN module Hardware LIN: 1 channel (timer RA, UART0)A/D converter 10-bit A/D converter: 1 circuit, 12 channels Watchdog timer 15 bits × 1 channel (with prescaler)Reset start selectableInterrupts Internal: 11 sources, External: 5 sources, Software: 4sources, Priority levels: 7 levelsClock Clock generation circuits 3 circuits•XIN clock generation circuit (with on-chip feedback resistor)•On-chip oscillator (high speed, low speed)High-speed on-chip oscillator has a frequency adjustment function•XCIN clock generation circuit (32 kHz)Real-time clock (timer RE)Oscillation stop detection function XIN clock oscillation stop detection function Voltage detection circuit On-chip Power-on reset circuit On-chipElectrical Characteristics Supply voltage VCC = 3.0 to 5.5 V (f(XIN) = 20 MHz)VCC = 2.7 to 5.5 V (f(XIN) = 10 MHz)VCC = 2.2 to 5.5 V (f(XIN) = 5 MHz)Current consumption Typ. 10 mA (VCC = 5.0 V, f(XIN) = 20 MHz)Typ. 6 mA (VCC = 3.0 V, f(XIN) = 10 MHz)Typ. 2.0 µA (VCC = 3.0 V, wait mode (f(XCIN) = 32 kHz)Typ. 0.7 µA (VCC = 3.0 V, stop mode)Flash Memory Programming and erasure voltage VCC = 2.7 to 5.5 VProgramming and erasure endurance 100 timesOperating Ambient Temperature -20 to 85°C (N version)-40 to 85°C (D version)(2)-20 to 105°C (Y version)(3)Package 52-pin molded-plastic LQFP64-pin molded-plastic FLGATable 1.2Functions and Specifications for R8C/25 GroupNOTES:1.I 2C bus is a trademark of Koninklijke Philips Electronics N. V.2.Specify the D version if D version functions are to be used.Item SpecificationCPU Number of fundamental instructions89 instructionsMinimum instruction execution time 50 ns (f(XIN) = 20 MHz, VCC = 3.0 to 5.5 V)100 ns (f(XIN) = 10 MHz, VCC = 2.7 to 5.5 V)200 ns (f(XIN) = 5 MHz, VCC = 2.2 to 5.5 V)Operating mode Single-chip Address space 1 Mbyte Memory capacity Refer to Table 1.4 Product Information for R8C/25 GroupPeripheral Functions Ports I/O ports: 41 pins, Input port: 3 pins LED drive ports I/O ports: 8 pinsTimers Timer RA: 8 bits × 1 channelTimer RB: 8 bits × 1 channel(Each timer equipped with 8-bit prescaler)Timer RD: 16 bits × 2 channels(Input capture and output compare circuits)Timer RE: With real-time clock and compare match functionSerial interface 2 channels (UART0, UART1)Clock synchronous serial I/O, UARTClock synchronous serial interface 1 channel I 2C bus Interface (1)Clock synchronous serial I/O with chip selectLIN module Hardware LIN: 1 channel (timer RA, UART0)A/D converter 10-bit A/D converter: 1 circuit, 12 channels Watchdog timer 15 bits × 1 channel (with prescaler)Reset start selectableInterrupts Internal: 11 sources, External: 5 sources, Software: 4sources, Priority levels: 7 levelsClock Clock generation circuits 3 circuits•XIN clock generation circuit (with on-chip feedbackresistor)•On-chip oscillator (high speed, low speed)High-speed on-chip oscillator has a frequency adjustment function•XCIN clock generation circuit (32 kHz)Real-time clock (timer RE)Oscillation stop detection function XIN clock oscillation stop detection function Voltage detection circuit On-chip Power-on reset circuit On-chipElectrical Characteristics Supply voltage VCC = 3.0 to 5.5 V (f(XIN) = 20 MHz)VCC = 2.7 to 5.5 V (f(XIN) = 10 MHz)VCC = 2.2 to 5.5 V (f(XIN) = 5 MHz)Current consumption Typ. 10 mA (VCC = 5.0 V, f(XIN) = 20 MHz)Typ. 6 mA (VCC = 3.0 V, f(XIN) = 10 MHz)Typ. 2.0 µA (VCC = 3.0 V, wait mode (f(XCIN) = 32 kHz)Typ. 0.7 µA (VCC = 3.0 V, stop mode)Flash memory Programming and erasure voltage VCC = 2.7 to 5.5 VProgramming and erasure endurance 1,0000 times (data flash)1,000 times (program ROM)Operating Ambient Temperature -20 to 85°C (N version)-40 to 85°C (D version)(2)-20 to 105°C (Y version)(3)Package 52-pin molded-plastic LQFP64-pin molded-plastic FLGA1.3Block DiagramFigure 1.1 shows a Block Diagram.1.4Product InformationTable 1.3 lists the Product Information for R8C/24 Group and Table 1.4 lists the Product Information for R8C/25Group.NOTE:1.The user ROM is programmed before shipment.Table 1.3Product Information for R8C/24 GroupCurrent of Feb. 2008 Type No.ROM Capacity RAM Capacity Package Type Remarks R5F21244SNFP 16 Kbytes 1 Kbyte PLQP0052JA-A N version Blank productR5F21245SNFP 24 Kbytes 2 Kbytes PLQP0052JA-A R5F21246SNFP 32 Kbytes 2 Kbytes PLQP0052JA-A R5F21247SNFP 48 Kbytes 2.5 Kbytes PLQP0052JA-A R5F21248SNFP 64 Kbytes 3 Kbytes PLQP0052JA-A R5F21244SNLG 16 Kbytes 1 Kbyte PTLG0064JA-A R5F21246SNLG 32 Kbytes 2 Kbytes PTLG0064JA-A R5F21244SDFP 16 Kbytes 1 Kbyte PLQP0052JA-A D version Blank productR5F21245SDFP 24 Kbytes 2 Kbytes PLQP0052JA-A R5F21246SDFP 32 Kbytes 2 Kbytes PLQP0052JA-A R5F21247SDFP 48 Kbytes 2.5 Kbytes PLQP0052JA-A R5F21248SDFP64 Kbytes 3 Kbytes PLQP0052JA-A R5F21244SNXXXFP 16 Kbytes 1 Kbyte PLQP0052JA-A N version Factoryprogramming product (1)R5F21245SNXXXFP 24 Kbytes 2 Kbytes PLQP0052JA-A R5F21246SNXXXFP 32 Kbytes 2 Kbytes PLQP0052JA-A R5F21247SNXXXFP 48 Kbytes 2.5 Kbytes PLQP0052JA-A R5F21248SNXXXFP 64 Kbytes 3 Kbytes PLQP0052JA-A R5F21244SNXXXLG 16 Kbytes 1 Kbyte PTLG0064JA-A R5F21246SNXXXLG 32 Kbytes 2 Kbytes PTLG0064JA-A R5F21244SDXXXFP 16 Kbytes 1 Kbyte PLQP0052JA-A D version Factoryprogramming product (1)R5F21245SDXXXFP 24 Kbytes 2 Kbytes PLQP0052JA-A R5F21246SDXXXFP 32 Kbytes 2 Kbytes PLQP0052JA-A R5F21247SDXXXFP 48 Kbytes 2.5 Kbytes PLQP0052JA-A R5F21248SDXXXFP64 Kbytes3 KbytesPLQP0052JA-ANOTE:1.The user ROM is programmed before shipment.Table 1.4Product Information for R8C/25 GroupCurrent of Feb. 2008Type No.ROM CapacityRAMCapacity Package Type Remarks Program ROM Data flash R5F21254SNFP 16 Kbytes 1 Kbyte × 2 1 Kbyte PLQP0052JA-A N version Blank productR5F21255SNFP 24 Kbytes 1 Kbyte × 2 2 Kbytes PLQP0052JA-A R5F21256SNFP 32 Kbytes 1 Kbyte × 2 2 Kbytes PLQP0052JA-A R5F21257SNFP 48 Kbytes 1 Kbyte × 2 2.5 Kbytes PLQP0052JA-A R5F21258SNFP 64 Kbytes 1 Kbyte × 2 3 Kbytes PLQP0052JA-A R5F21254SNLG 16 Kbytes 1 Kbyte × 2 1 Kbyte PTLG0064JA-A R5F21256SNLG 32 Kbytes 1 Kbyte × 2 2 Kbytes PTLG0064JA-A R5F21254SDFP 16 Kbytes 1 Kbyte × 2 1 Kbyte PLQP0052JA-A D version Blank productR5F21255SDFP 24 Kbytes 1 Kbyte × 2 2 Kbytes PLQP0052JA-A R5F21256SDFP 32 Kbytes 1 Kbyte × 2 2 Kbytes PLQP0052JA-A R5F21257SDFP 48 Kbytes 1 Kbyte × 2 2.5 Kbytes PLQP0052JA-A R5F21258SDFP64 Kbytes 1 Kbyte × 2 3 Kbytes PLQP0052JA-A R5F21254SNXXXFP 16 Kbytes 1 Kbyte × 2 1 Kbyte PLQP0052JA-A N version Factoryprogramming product (1)R5F21255SNXXXFP 24 Kbytes 1 Kbyte × 2 2 Kbytes PLQP0052JA-A R5F21256SNXXXFP 32 Kbytes 1 Kbyte × 2 2 Kbytes PLQP0052JA-A R5F21257SNXXXFP 48 Kbytes 1 Kbyte × 2 2.5 Kbytes PLQP0052JA-A R5F21258SNXXXFP 64 Kbytes 1 Kbyte × 2 3 Kbytes PLQP0052JA-A R5F21254SNXXXLG 16 Kbytes 1 Kbyte × 2 1 Kbyte PTLG0064JA-A R5F21256SNXXXLG 32 Kbytes 1 Kbyte × 2 2 Kbytes PTLG0064JA-A R5F21254SDXXXFP 16 Kbytes 1 Kbyte × 2 1 Kbyte PLQP0052JA-A D version Factoryprogramming product (1)R5F21255SDXXXFP 24 Kbytes 1 Kbyte × 2 2 Kbytes PLQP0052JA-A R5F21256SDXXXFP 32 Kbytes 1 Kbyte × 2 2 Kbytes PLQP0052JA-A R5F21257SDXXXFP 48 Kbytes 1 Kbyte × 2 2.5 Kbytes PLQP0052JA-A R5F21258SDXXXFP64 Kbytes 1 Kbyte × 23 KbytesPLQP0052JA-A1.5Pin AssignmentsFigure 1.4 shows PLQP0052JA-A Package Pin Assignments (Top View). Figure 1.5 shows PTLG0064JA-A Package Pin Assignments.1.6Pin FunctionsTable 1.5 lists Pin Functions.I: InputO: OutputI/O: Input and outputTable 1.5Pin FunctionsTypeSymbolI/O TypeDescriptionPower supply input VCC, VSS I Apply 2.2 V to 5.5 V to the VCC pin. Apply 0 V to the VSS pin.Analog power supply input AVCC, AVSS I Power supply for the A/D converter.Connect a capacitor between AVCC and AVSS.Reset input RESET I Input “L” on this pin resets the MCU.MODE MODE I Connect this pin to VCC via a resistor.XIN clock input XIN I These pins are provided for XIN clock generation circuit I/O.Connect a ceramic resonator or a crystal oscillator between the XIN and XOUT pins. To use an external clock, input it to the XIN pin and leave the XOUT pin open.XIN clock output XOUT O XCIN clock input XCIN I These pins are provided for XCIN clock generation circuit I/O.Connect a crystal oscillator between the XCIN and XCOUT pins. To use an external clock, input it to the XCIN pin and leave the XCOUT pin open.XCIN clock output XCOUT O INT interrupt input INT0 to INT3I INT interrupt input pins.INT0 is timer RD input pin. INT1 is timer RA input pin.Key input interrupt KI0 to KI3I Key input interrupt input pins Timer RA TRAIO I/O Timer RA I/O pin TRAO O Timer RA output pin Timer RB TRBOO Timer RB output pin Timer RDTRDIOA0, TRDIOA1,TRDIOB0, TRDIOB1,TRDIOC0, TRDIOC1,TRDIOD0, TRDIOD1I/OTimer RD I/O portsTRDCLK I External clock input pin Timer RE TREO O Divided clock output pin Serial interfaceCLK0, CLK1I/O Transfer clock I/O pin RXD0, RXD1I Serial data input pins TXD0, TXD1O Serial data output pins I 2C bus interfaceSCL I/O Clock I/O pin SDAI/O Data I/O pin Clock synchronous serial I/O with chip selectSSI I/O Data I/O pinSCS I/O Chip-select signal I/O pin SSCKI/O Clock I/O pin SSOI/O Data I/O pinReference voltage input VREF I Reference voltage input pin to A/D converter A/D converter AN0 to AN11I Analog input pins to A/D converterI/O portP0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0, P3_1,P3_3 to P3_5, P3_7, P4_3 to P4_5, P6_0 to P6_7I/OCMOS I/O ports. Each port has an I/O select direction register, allowing each pin in the port to be directed for input or output individually.Any port set to input can be set to use a pull-up resistor or not by a program.P2_0 to P2_7 also function as LED drive ports.Input port P4_2, P4_6, P4_7IInput-only portsNOTE:1.Can be assigned to the pin in parentheses by a program.Table 1.6Pin Name Information by Pin NumberPinNumber Control PinPortI/O Pin Functions for of Peripheral ModulesInterruptTimerSerial Interface ClockSynchronous Serial I/O with Chip Select I 2C busInterfaceA/D Converter2P3_5SSCK SCL 3P3_3SSI4P3_4SCSSDA5MODE 6XCIN P4_37XCOUT P4_48RESET 9XOUT P4_710VSS/AVSS11XIN P4_612VCC/AVCC13P2_7TRDIOD114P2_6TRDIOC115P2_5TRDIOB116P2_4TRDIOA117P2_3TRDIOD018P2_2TRDIOC019P2_1TRDIOB020P2_0TRDIOA0/TRDCLK21P1_7INT1TRAIO22P1_6CLK023P1_5(INT1)(1)(TRAIO)(1)RXD024P1_4TXD025P1_3KI3AN1127P4_5INT0INT028P6_6INT2TXD129P6_7INT3RXD130P1_2KI2AN1031P1_1KI1AN932P1_0KI0AN833P3_1TRBO 34P3_0TRAO35P6_5CLK136P6_437P6_338P0_7AN041P0_6AN142P0_5AN243P0_4AN344VREFP4_245P6_0TREO46P6_247P6_148P0_3AN449P0_2AN550P0_1AN651P0_0AN752P3_7SSO2.Central Processing Unit (CPU)Figure 2.1 shows the CPU Registers. The CPU contains 13 registers. R0, R1, R2, R3, A0, A1, and FB configure a register bank. There are two sets of register bank.2.1Data Registers (R0, R1, R2, and R3)R0 is a 16-bit register for transfer, arithmetic, and logic operations. The same applies to R1 to R3. R0 can be split into high-order bits (R0H) and low-order bits (R0L) to be used separately as 8-bit data registers. R1H and R1L are analogous to R0H and R0L. R2 can be combined with R0 and used as a 32-bit data register (R2R0). R3R1 is analogous to R2R0.2.2Address Registers (A0 and A1)A0 is a 16-bit register for address register indirect addressing and address register relative addressing. It is also used for transfer, arithmetic, and logic operations. A1 is analogous to A0. A1 can be combined with A0 and as a 32-bit address register (A1A0).2.3Frame Base Register (FB)FB is a 16-bit register for FB relative addressing.2.4Interrupt Table Register (INTB)INTB is a 20-bit register that indicates the start address of an interrupt vector table.2.5Program Counter (PC)PC is 20 bits wide and indicates the address of the next instruction to be executed.2.6User Stack Pointer (USP) and Interrupt Stack Pointer (ISP)The stack pointers (SP), USP, and ISP, are each 16 bits wide. The U flag of FLG is used to switch betweenUSP and ISP.2.7Static Base Register (SB)SB is a 16-bit register for SB relative addressing.2.8Flag Register (FLG)FLG is an 11-bit register indicating the CPU state.2.8.1Carry Flag (C)The C flag retains carry, borrow, or shift-out bits that have been generated by the arithmetic and logic unit.2.8.2Debug Flag (D)The D flag is for debugging only. Set it to 0.2.8.3Zero Flag (Z)The Z flag is set to 1 when an arithmetic operation results in 0; otherwise to 0.2.8.4Sign Flag (S)The S flag is set to 1 when an arithmetic operation results in a negative value; otherwise to 0.2.8.5Register Bank Select Flag (B)Register bank 0 is selected when the B flag is 0. Register bank 1 is selected when this flag is set to 1.2.8.6Overflow Flag (O)The O flag is set to 1 when an operation results in an overflow; otherwise to 0.2.8.7Interrupt Enable Flag (I)The I flag enables maskable interrupts.Interrupt are disabled when the I flag is set to 0, and are enabled when the I flag is set to 1. The I flag is set to 0 when an interrupt request is acknowledged.2.8.8Stack Pointer Select Flag (U)ISP is selected when the U flag is set to 0; USP is selected when the U flag is set to 1.The U flag is set to 0 when a hardware interrupt request is acknowledged or the INT instruction of software interrupt numbers 0 to 31 is executed.2.8.9Processor Interrupt Priority Level (IPL)IPL is 3 bits wide and assigns processor interrupt priority levels from level 0 to level 7.If a requested interrupt has higher priority than IPL, the interrupt is enabled.2.8.10Reserved BitIf necessary, set to 0. When read, the content is undefined.3.Memory3.1R8C/24 GroupFigure 3.1 is a Memory Map of R8C/24 Group. The R8C/24 group has 1 Mbyte of address space from addresses 00000h to FFFFFh.The internal ROM is allocated lower addresses, beginning with address 0FFFFh. For example, a 48-Kbyte internal ROM area is allocated addresses 04000h to 0FFFFh.The fixed interrupt vector table is allocated addresses 0FFDCh to 0FFFFh. They store the starting address of each interrupt routine.The internal RAM is allocated higher addresses, beginning with address 00400h. For example, a 2-Kbyte internal RAM area is allocated addresses 00400h to 00BFFh. The internal RAM is used not only for storing data but also for calling subroutines and as stacks when interrupt requests are acknowledged.Special function registers (SFRs) are allocated addresses 00000h to 002FFh. The peripheral function control registers are allocated here. All addresses within the SFR, which have nothing allocated are reserved for future use and cannot be accessed by users.3.2R8C/25 GroupFigure 3.2 is a Memory Map of R8C/25 Group. The R8C/25 group has 1 Mbyte of address space from addresses 00000h to FFFFFh.The internal ROM (program ROM) is allocated lower addresses, beginning with address 0FFFFh. For example, a 48-Kbyte internal ROM area is allocated addresses 04000h to 0FFFFh.The fixed interrupt vector table is allocated addresses 0FFDCh to 0FFFFh. They store the starting address of each interrupt routine.The internal ROM (data flash) is allocated addresses 02400h to 02BFFh.The internal RAM area is allocated higher addresses, beginning with address 00400h. For example, a 2-Kbyte internal RAM is allocated addresses 00400h to 00BFFh. The internal RAM is used not only for storing data but also for calling subroutines and as stacks when interrupt requests are acknowledged.Special function registers (SFRs) are allocated addresses 00000h to 002FFh. The peripheral function control registers are allocated here. All addresses within the SFR, which have nothing allocated are reserved for future use and cannot be accessed by users.4.Special Function Registers (SFRs)An SFR (special function register) is a control register for a peripheral function. Tables 4.1 to 4.7 list the special function registers.Table 4.1SFR Information (1)(1)X: Undefined NOTES:1.The blank regions are reserved. Do not access locations in these regions.2.Software reset, watchdog timer reset, and voltage monitor 1 reset or voltage monitor 2 reset do not affect this register.3.The LVD0ON bit in the OFS register is set to 1 and hardware reset.4.Power-on reset, voltage monitor 0 reset or the LVD0ON bit in the OFS register is set to 0, and hardware reset.5.Software reset, watchdog timer reset, and voltage monitor 1 reset or voltage monitor 2 reset do not affect b2 and b3.6.The CSPROINI bit in the OFS register is set to 0.Address RegisterSymbolAfter reset0000h 0001h 0002h 0003h 0004h Processor Mode Register 0PM000h 0005h Processor Mode Register 1PM100h0006h System Clock Control Register 0CM001101000b 0007h System Clock Control Register 1CM100100000b0008h 0009h 000Ah Protect RegisterPRCR 00h 000Bh 000Ch Oscillation Stop Detection Register OCD 00000100b 000Dh Watchdog Timer Reset Register WDTR XXh 000Eh Watchdog Timer Start Register WDTS XXh000Fh Watchdog Timer Control Register WDC 00X11111b 0010h Address Match Interrupt Register 0RMAD000h 0011h 00h 0012h 00h 0013h Address Match Interrupt Enable Register AIER 00h 0014h Address Match Interrupt Register 1RMAD100h 0015h 00h 0016h 00h0017h 0018h 0019h 001Ah 001Bh 001Ch Count Source Protection Mode Register CSPR00h10000000b (6)001Dh 001Eh 001Fh 0020h 0021h 0022h 0023h High-Speed On-Chip Oscillator Control Register 0FRA000h0024h High-Speed On-Chip Oscillator Control Register 1FRA1When shipping 0025h High-Speed On-Chip Oscillator Control Register 2FRA200h0026h 0027h 0028h Clock Prescaler Reset FlagCPSRF 00h0029h High-Speed On-Chip Oscillator Control Register 4FRA4When shipping 002Ah 002Bh High-Speed On-Chip Oscillator Control Register 6FRA6When shipping 002Ch High-Speed On-Chip Oscillator Control Register 7FRA7When shipping0030h 0031h Voltage Detection Register 1(2)VCA100001000b 0032h Voltage Detection Register 2(2)VCA200h (3)00100000b (4)0033h 0034h 0035h 0036h Voltage Monitor 1 Circuit Control Register (5)VW1C 00001000b 0037h Voltage Monitor 2 Circuit Control Register (5)VW2C 00h0038h Voltage Monitor 0 Circuit Control Register (2)VW0C0000X000b (3)0100X001b (4)0039h 003Ah003Eh 003FhTable 4.2SFR Information (2)(1)Address Register Symbol After reset 0040h0041h0042h0043h0044h0045h0046h0047h0048h Timer RD0 Interrupt Control Register TRD0IC XXXXX000b 0049h Timer RD1 Interrupt Control Register TRD1IC XXXXX000b 004Ah Timer RE Interrupt Control Register TREIC XXXXX000b 004Bh004Ch004Dh Key Input Interrupt Control Register KUPIC XXXXX000b 004Eh A/D Conversion Interrupt Control Register ADIC XXXXX000b 004Fh SSU/IIC Interrupt Control Register(2)SSUIC / IICIC XXXXX000b 0050h0051h UART0 Transmit Interrupt Control Register S0TIC XXXXX000b 0052h UART0 Receive Interrupt Control Register S0RIC XXXXX000b 0053h UART1 Transmit Interrupt Control Register S1TIC XXXXX000b 0054h UART1 Receive Interrupt Control Register S1RIC XXXXX000b 0055h INT2 Interrupt Control Register INT2IC XX00X000b 0056h Timer RA Interrupt Control Register TRAIC XXXXX000b 0057h0058h Timer RB Interrupt Control Register TRBIC XXXXX000b 0059h INT1 Interrupt Control Register INT1IC XX00X000b 005Ah INT3 Interrupt Control Register INT3IC XX00X000b 005Bh005Ch005Dh INT0 Interrupt Control Register INT0IC XX00X000b 005Eh005Fh0060h0061h0062h0063h0064h0065h0066h0067h0068h0069h006Ah006Bh006Ch006Dh006Eh006Fh0070h0071h0072h0073h0074h0075h0076h0077h0078h0079h007Ah007Bh007Ch007Dh007Eh007FhX: UndefinedNOTES:1.The blank regions are reserved. Do not access locations in these regions.2.Selected by the IICSEL bit in the PMR register.Table 4.3SFR Information (3)(1)Address Register Symbol After reset 0080h0081h0082h0083h0084h0085h0086h0087h0088h0089h008Ah008Bh008Ch008Dh008Eh008Fh0090h0091h0092h0093h0094h0095h0096h0097h0098h0099h009Ah009Bh009Ch009Dh009Eh009Fh00A0h UART0 Transmit/Receive Mode Register U0MR00h00A1h UART0 Bit Rate Register U0BRG XXh00A2h UART0 Transmit Buffer Register U0TB XXh00A3h XXh00A4h UART0 Transmit/Receive Control Register 0U0C000001000b 00A5h UART0 Transmit/Receive Control Register 1U0C100000010b 00A6h UART0 Receive Buffer Register U0RB XXh00A7h XXh00A8h UART1 Transmit/Receive Mode Register U1MR00h00A9h UART1 Bit Rate Register U1BRG XXh00AAh UART1 Transmit Buffer Register U1TB XXh00ABh XXh00ACh UART1 Transmit/Receive Control Register 0U1C000001000b 00ADh UART1 Transmit/Receive Control Register 1U1C100000010b 00AEh UART1 Receive Buffer Register U1RB XXh00AFh XXh00B0h00B1h00B2h00B3h00B4h00B5h00B6h00B7h00B8h SS Control Register H / IIC bus Control Register 1(2)SSCRH / ICCR100h00B9h SS Control Register L / IIC bus Control Register 2(2)SSCRL / ICCR201111101b 00BAh SS Mode Register / IIC bus Mode Register(2)SSMR / ICMR00011000b 00BBh SS Enable Register / IIC bus Interrupt Enable Register(2)SSER / ICIER00h00BCh SS Status Register / IIC bus Status Register(2)SSSR / ICSR00h / 0000X000b 00BDh SS Mode Register 2 / Slave Address Register(2)SSMR2 / SAR00h00BEh SS Transmit Data Register / IIC bus Transmit Data Register(2)SSTDR / ICDRT FFh00BFh SS Receive Data Register / IIC bus Receive Data Register(2)SSRDR / ICDRR FFhX: UndefinedNOTES:1.The blank regions are reserved. Do not access locations in these regions.2.Selected by the IICSEL bit in the PMR register.Table 4.4SFR Information (4)(1)Address Register Symbol After reset 00C0h A/D Register AD XXh00C1h XXh00C2h00C3h00C4h00C5h00C6h00C7h00C8h00C9h00CAh00CBh00CCh00CDh00CEh00CFh00D0h00D1h00D2h00D3h00D4h A/D Control Register 2ADCON200h00D5h00D6h A/D Control Register 0ADCON000h00D7h A/D Control Register 1ADCON100h00D8h00D9h00DAh00DBh00DCh00DDh00DEh00DFh00E0h Port P0 Register P0XXh00E1h Port P1 Register P1XXh00E2h Port P0 Direction Register PD000h00E3h Port P1 Direction Register PD100h00E4h Port P2 Register P2XXh00E5h Port P3 Register P3XXh00E6h Port P2 Direction Register PD200h00E7h Port P3 Direction Register PD300h00E8h Port P4 Register P4XXh00E9h00EAh Port P4 Direction Register PD400h00EBh00ECh Port P6 Register P6XXh00EDh00EEh Port P6 Direction Register PD600h00EFh00F0h00F1h00F2h00F3h00F4h Port P2 Drive Capacity Control Register P2DRR00h00F5h UART1 Function Select Register U1SR XXh00F6h00F7h00F8h Port Mode Register PMR00h00F9h External Input Enable Register INTEN00h00FAh INT Input Filter Select Register INTF00h00FBh Key Input Enable Register KIEN00h00FCh Pull-Up Control Register 0PUR000h00FDh Pull-Up Control Register 1PUR1XX00XX00b 00FEh00FFhX: UndefinedNOTE:1.The blank regions are reserved. Do not access locations in these regions.Table 4.5SFR Information (5)(1)Address Register Symbol After reset 0100h Timer RA Control Register TRACR00h0101h Timer RA I/O Control Register TRAIOC00h0102h Timer RA Mode Register TRAMR00h0103h Timer RA Prescaler Register TRAPRE FFh0104h Timer RA Register TRA FFh0105h0106h LIN Control Register LINCR00h0107h LIN Status Register LINST00h0108h Timer RB Control Register TRBCR00h0109h Timer RB One-Shot Control Register TRBOCR00h010Ah Timer RB I/O Control Register TRBIOC00h010Bh Timer RB Mode Register TRBMR00h010Ch Timer RB Prescaler Register TRBPRE FFh010Dh Timer RB Secondary Register TRBSC FFh010Eh Timer RB Primary Register TRBPR FFh010Fh0110h0111h0112h0113h0114h0115h0116h0117h0118h Timer RE Second Data Register / Counter Data Register TRESEC00h0119h Timer RE Minute Data Register / Compare Data Register TREMIN00h011Ah Timer RE Hour Data Register TREHR00h011Bh Timer RE Day of Week Data Register TREWK00h011Ch Timer RE Control Register 1TRECR100h011Dh Timer RE Control Register 2TRECR200h011Eh Timer RE Count Source Select Register TRECSR00001000b 011Fh0120h0121h0122h0123h0124h0125h0126h0127h0128h0129h012Ah012Bh012Ch012Dh012Eh012Fh0130h0131h0132h0133h0134h0135h0136h0137h Timer RD Start Register TRDSTR11111100b 0138h Timer RD Mode Register TRDMR00001110b 0139h Timer RD PWM Mode Register TRDPMR10001000b 013Ah Timer RD Function Control Register TRDFCR10000000b 013Bh Timer RD Output Master Enable Register 1TRDOER1FFh013Ch Timer RD Output Master Enable Register 2TRDOER201111111b 013Dh Timer RD Output Control Register TRDOCR00h013Eh Timer RD Digital Filter Function Select Register 0TRDDF000h013Fh Timer RD Digital Filter Function Select Register 1TRDDF100hX: UndefinedNOTE:1.The blank regions are reserved. Do not access locations in these regions.。
DFU400 使用说明书
0XJ 465 160第 3 页共 63 页旧底图总号底图总号签字日期z 回校指示和接收外部控制及开关设备所发报警信号；z 模拟量的测量；z 通过电触发信号产生的内部时钟同步；z 通过光触发信号产生的内部时钟同步。
1.3.2 串行接口z 与主控站通信；z 配置参数，调试和就地控制；z 下载系统固件。
2 技术参数2.1 基本数据2.1.1 开关量输入a)输入通道个数: 40；b)额定电压: 24 VDC, 110 VDC, 220 VDC 可选；c)电压范围: 额定电压的±20%；d)信号电平/电压范围:低电平: 0 V ∼ 额定电压的40% ；高电平: 额定电压的60% ∼ 额定电压的120%。
e)输入死区时间：1 ms ∼ 2550 s可配置；f)输入滤波时间：1 ms ∼ 2550 s可配置；g)每个通道的功耗: 1.1 W (2.5 mA 220 VDC)；h)电气隔离: 光耦；i)连接: 插入式连接, 4 mm2端子。
2.1.2 开关量输出a)输出通道个数: 24, 每个通道2个空接点（触点）, 每两个通道一个公共回路；b)输出接点电压:选项1: 110 VDC/175 VAC（带触点防护）；选项2: 220 VDC/250 VAC（带触点防护）；选项3: 220 VDC/250 VAC（无触点防护）。
c)最大开关电流: 15 A 最大4 s (通道1到通道22)；25 A 最大4 s (通道23到通道24)；d)最大持续电流: 8 A (通道1到通道22)；10 A (通道23到通道24)；e)切换容量: 50 W∼270 W (通道1到通道22)；35 W∼500 W (通道23到通道24)；f)电气隔离: 继电器；g)连接: 插入式连接, 4 mm2端子。
2.1.3 模拟量输入a)输入通道个数: 8；0XJ 465 160第 4 页共 63 页旧底图总号底图总号签字日期b)额定值: 20 mA，10 V可选；c)标幺值: 10 mA，5 V为100% ；d)测量误差: 0.5%额定值；e)输入滤波器的死区时间: 0.8 ms(20 mA 输入), 50 µF(10 V 输入)；f)每个通道功耗: 20 mW (电流输入) / 2 mW (电压输入)；g)每个电压/电流通道输入阻抗: 50 kΩ(电压输入)/200 Ω(电流输入)；h)电气隔离: 通过外部连接的变送器或互感器；i)连接: 插入式连接, 2.5 mm2端子。
日本富士变频器功能表
F27 日本富士变频器功能表时间: 2008年10月01日 来源:溧阳电梯网 作者: 佚名 浏览次数:735 【字体：大 中 小】一、基本功能功能码 名称 LCD 画面显示 可设定范围 单位 最小单位 出厂设定 运行时变更 备注 F00 密码功能 F00 DATA PRTC 0--FFFF - - 0F01 频 率设定1 F01 FREQ CMD 1 0:键盘操作(∧∨键) 1:电压输入(端子12)(0--+10VDC)2:电流输入(端子C1)(4--20mADC)3:电压输入+电流输入(端子12+端子C1)4:用极性信号可作反向运行(端子12)(0--10VDC) - - 0 F02 运行操作 F02 OPR METHOD 0:键盘操作 FWD REV STOP 键1:外部信号(数字输入)(用 FWD REV 端子信号运行) - - 0 选择运行操作的输入方式F03 最高输出频率1 F03 MAX Hz - 1 50 - 120 Hz 1 60 可设定输出的最高频率 F04 基本频率1 F04 BASE Hz - 1 25 - 120 Hz 1 50 设定基本频率F05 额定电压1（基本频率1时） F05 RADET V - 1 0:输出与电源电压成比例的电压80 - 240: AVR 动作(200V 级)320 - 480: AVR 动作(400V 级) V 1 200V 级:200400V 级:400 设定基本频率1(F04)时的电压F06 最高输出电压1（最高输出频率时） F06 MAX V - 1 80 - 240V: AVR 动作(200V 级)320 - 480V: AVR 动作(400V 级) V 1 200V 级:200400V 级:400 设定最高输出频率1(F03)时的电压F07 加减速时间1 F07 ACC TIME 1 0.01-3600 s 0.01 6.00 ∨F08 加减速时间2 F08 DEC TIME 1 0.01-3600 s 0.01 6.00 ∨F09 转矩提升1 F09 TRQ BOOST 1 0.0:自动转矩提升(恒转矩特性负载用)0.1-0.9:平方转矩特性负载用1.0-1.9:比例转矩特性负载用2.0-20.0:恒转矩特性负载用 - 0.1 0.0 ∨F10 电子继电器动作选择 F10 ELCTRN OL 1 0:不动作1:动作(通用电机)2:动作(变频专用电机) - - 2 ∨F11 电子继电器动作值 F11 OL LEVEL 1 变频器额定电流的20-135%电流值为A的设定值 A 0.01 *1) ∨F12 电子继电器热时间常数 F12 TIME CNST 1 0.5 - 75.0 min 0.1 5.0 ∨F13 未使用（DB电阻） F13 DBR OL 数据保护 - - - -F14 未使用（再启动） F14 RESTART 数据保护 - - - -F15 频率上限 F15 H LIMITER 0 - 120 Hz 1 70 ∨F16 频率下限 F16 L LIMITER 0 - 120 Hz 1 0 ∨F17 增益（频率设定信号） F17 FREQ GAIN 0.0 - 200.0 % 0.1 100.0 ∨F18 偏置频率 F18 FREQ BIAS -120.0 - +120.0 Hz 0.1 0.0 ∨F19 不使用 - - - - - -F20 直流制动开始频率 F20 DC BRK Hz 0.0 - 60.0 Hz 0.1 0.0 ∨F21 直流制动动作值 F21 DC BRK LVL 0 - 100 % 1 0 ∨F22 直流制动时间 F22 DC BRK t 0.0s(不动作)0.1 - 30.0 s 0.1 0.0 ∨F23 起动频率 F23 START Hz 0.0 - 60.0 Hz 0.1 0.0F24 起动频率持续时间 F24 HOLDING Hz 0.0 - 10.0 s 0.1 0.0 ×F25 停止频率 F25 STOP Hz 0.1 - 6.0 Hz 0.1 0.1 ×F26 电机转动声(载波频率) F26 MTR SOUND 2 - 15 KHz 1 15 ∨下一页电机转动声(音色)F27 MTR TONE 0:0级1:1级2:2级3:3级 - - 0 ∨可选择4种音调.载波频率(F26)在7[KHz]以下时有效,即使超过7[KHz]时也可设定,不过不能调整音色.F28 不使用 - - - - - -F29 不使用 - - - - - -F30 FMA端子电压调整 F30 FMA V - ADJ 0 - 200 % 1 100 ∨F31 FMA端子功能选择 F31 FMA FUNC 0:速度调节器设定值( BSR )1:输出频率2:输出电流3:输出电压4:转矩指令输出( BSFB )5:负载率6:耗电7:未使用8:检测速度9:直流中间电压10:未使用11:转矩偏置平衡调整( BTBB )12:转矩偏置增益调整( BTBG ) - - 0 ∨ FMA端子0 - 10V定义0:0-最高速度(绝对值)1:0-最高频率(绝对值)8:0-最高速度(绝对值)11:转矩-100% - +100%12:转矩-100% - +100%F32 不使用 - - - - - -F33 FMP端子脉冲率 F33 FMP PULSES 300 - 6000 (100%时的脉冲) p/s 1 1440 ∨F34 FMP端子电压调整 F34 FMP V - ADJ 0:脉冲频率输出(50%幅值固定)1 - 200:输出电压调整(2670p/s固定,脉冲宽度调整) % 1 0 ∨F35 FMP端子功能选择 F35 FMP FUNC 0:速度调节器设定值1:输出频率2:输出电流3:输出电压4:输出转矩5:负载率6:耗电7:未使用8:检测速度9:直流中间电路电压10:未使用 - - 0 ∨ FMA端子0-10V的定义0:0-最高速度(绝对值)1:0-最高频率(绝对值)8:0-最高速度(绝对值)F36 30RY动作模式 F36 30RY MODE 0:跳闸时激磁动作1:通常时激磁动作 - - 0 ×F37 不使用 - - - - - -F38 不使用 - - - - - -F39 不使用 - - - - - -F40 转矩限制1(驱动) F40 DRV TRQ 1 20 - 200 999(不动作) % 1 200 ∨F41 转矩限制1(制动) F41 BRK TRQ 1 0 (再生回避),20 - 200 999(不动作) % 1 200 ∨F42 未使用 F42 TRQVECTOR 1 数据保护 - - - -二、端子功能功能码名称 LCD画面显示可设定范围单位最小单位出厂设定运行时变更备注E01 X1端子功能选择 E01 X1 FUNC 多段速频率选择段段多段速频率选择段段多段速频率选择段段未使用未使用未使用自由运转指令异常复位外部报警点动运行未使用未使用直流制动指令未使用未使用未使用未使用未使用允许编辑指令可更换数据未使用未使用未使用取消转矩控制选择链接运行万能未使用未使用未使用零速指令未使用强制停止预备激磁转矩偏置段段转矩偏置段段转矩偏置段段选择畜电池运行转矩偏置保持 - - 0 ×E02 X2端子功能选择 E02 X2 FUNC - - 1 ×E03 X3端子功能选择 E03 X3 FUNC - - 2 ×E04 X4端子功能选择 E04 X4 FUNC - - 8 ×E05 X5端子功能选择 E05 X5 FUNC - - 4 ×E06 X6端子功能选择 E06 X6 FUNC - - 4 ×E07 X7端子功能选择 E07 X7 FUNC - - 4 ×E08 X8端子功能选择 E08 X8 FUNC - - 4 ×E09 X9端子功能选择 E09 X9 FUNC - - 4 ×E10 加速时间2 E10 ACC TIME 2 0.01 - 3600 s 0.01 6.00 ∨E11 减速时间 2 E11 DEC TIME 2 0.01 - 3600 s 0.01 6.00 ∨E12 加速时间 3 E12 ACC TIME 3 0.01 - 3600 s 0.01 6.00 ∨E13 减速时间 3 E13 DEC TIME 3 0.01 -3600 s 0.01 6.00 ∨E14 加速时间 4 E14 ACC TIME 4 0.01 - 3600 s 0.01 6.00 ∨E15 减速时间 4 E15 DEC TIME 4 0.01 - 3600 s 0.01 6.00 ∨E16 未使用 E16 DRV TRQ 2 数据保护 - - - -E17 未使用 E17 BRK TRQ 2 数据保护 - - - -E18 未使用 - - - - - -E19 未使用 - - - - - -E20 Y1 端子功能选择 E20 Y1 FUNC 运行中频率到达的频率检测欠电压停止中转矩控制检测制动驱动转矩限制中未使用过载预报面板运行中停止中运行准备中未使用未使用未使用未使用端子功能用未使用未使用未使用未使用未使用跳闸原因显示信号跳闸原因显示信号跳闸原因显示信号跳闸原因显示信号冷却风扇控制未使用万用散热片过热预报未使用未使用频率检测过载预报未使用速度有信号制动控制信号加速中减速中速度一致制动控制信号 - - 0 ×E21 Y2 端子功能选择 E21 Y2 FUNC - - 38 ×E22 Y3 端子功能选择 E22 Y3 FUNC - - 39 ×E23 Y4 端子功能选择 E23 Y4 FUNC - - 6 ×E24 Y5A Y5C 端子(RY输出) E24 Y5 FUNC - - 6 ×E25 Y5RY 动作模式 E25 Y5RY MODE 0:用ON 信号激磁1:用OFF信号激磁 - - 0 -E26 未使用 - - - - - -E27 未使用 - - - - - -E28 未使用 - - - - - -E29 未使用 - - - - - -E30 速度一致(FAR)(检出值) E30 FAR HYSTR 0.0 - 10.0 Hz 0.1 2.5 ∨E31 频率检测(FDT)(动作值) E31 FDT LEVEL 0.0 - 120.0 Hz 0.1 60.0 ∨E32 频率检测(FDT)(滞后幅值) E32 FDT HYSTR 0.0 - 30.0 Hz 0.1 0 ∨E33 过载预报动作选择 E33 OL WARNING 0:电子热继电器1:输出电流 - - 0 ∨E34 过载预报动作值 E34 OL LEVEL 变频器额定电流的5 - 200 % 0.01 *1) ∨E35 过载预报定时器时间 E35 OL TIMER 0.0 - 60.0 s 0.1 10.0 ∨E36 频率检测2(FDT2)动作值 E36 FDT2 LEVEL 0.0 - 120 Hz 0.1 60.0 ∨E37 过载预报2 动作值 E37 OL2 LEVEL 变频器额定电流的5 - 200 % 0.01 *1) ∨E38 未使用 - - - - - -E39 未使用 - - - - - -E40 显示系数A E40 COEF A 0.00 - 200.0 - 0.01 100.0 ∨E41 显示系数B E41 COEF B -100.00 - - -100.00 ∨设定不能修改E42 显示滤波器 E42 DISPLAYFL 0.0 - 5.0 s 0.1 0.5 ∨E43 LDE 监示器(显示选择) E43 LDE MNTR 0:速度调节器设定值[BSR] 1:输出频率2:频率设定值3:输出电流4:输出电压5:电机转速6:线速度7:负载转速8:转矩运算值9:耗电10:转矩偏置平衡调整 [BTBB] 11:转矩偏置平衡调整 [BTBB]12:转矩偏置增益调整 [BTBG] - - 0 ∨ E44 LCD 监示器(停止显示) E44 LCD MNTR 2 0:设定值显示1:输出值显示 - - 0 ∨ 变频器停止时的LED 显示内容的设定E45 LCD 监示器显示选择 E45 LCD MNTR 0:操作指导显示画面1:条形图(输出频率,输出电流,输出转矩) - - 0 ∨ 以变频器额定电流作基准显示 E46 LCD 监示器语种选择 E46 LANGUAGE 0:日本语1:英语2:德语3:法语4:西班牙语5:意大利语 - - 0 ∨E47 LCD 监示器对比度调整 E47 CONTRAST 0(浅) - 10(深) - - 5 ∨三、控制功能功能码 名称 LCD 画面显示 可设定范围 单位 最小单位 出厂设定 运行时变更 备注 C01 频率跳越 1 C01 JUMP Hz1 0 - 120 Hz 1 0 ∨C02 频率跳越 2 C02 JUMP Hz2 0 - 120 Hz 1 0 ∨C03 频率跳越 3 C03 JUMP Hz3 0 - 120 Hz 1 0 ∨C04 频率跳越幅值 C04 JUMP HYSTR 0 - 30 Hz 1 60 ∨C05 多段频率 1 C05 MULTI Hz-1 0.00 - 120.00 Hz 0.01 0.00 ∨C06 多段频率 2 C06 MULTI Hz-2 0.00 - 120.00 Hz 0.01 0.00 ∨C07 多段频率 3 C07 MULTI Hz-3 0.00 - 120.00 Hz 0.01 0.00 ∨C08 多段频率 4 C08 MULTI Hz-4 0.00 - 120.00 Hz 0.01 0.00 ∨C09 多段频率 5 C09 MULTI Hz-5 0.00 - 120.00 Hz 0.01 0.00 ∨C10 多段频率 6 C10 MULTI Hz-6 0.00 - 120.00 Hz 0.01 0.00 ∨C11 多段频率 7 C11 MULTI Hz-7 0.00 - 120.00 Hz 0.01 0.00 ∨C12 多段频率 0 C12 MULTI Hz-8 0.00 - 120.00 Hz 0.01 0.00 ∨C13 蓄电池运行速度 C13 MULTI Hz-9 0.00 - 120.00 Hz 0.01 0.00 ∨ C14 未使用 C14 MULTI Hz-10 数据保护 - - - -C15 未使用 C15 MULTI Hz-11 数据保护 - - - -C16 未使用 C16 MULTI Hz-12 数据保护 - - - -C17 未使用 C17 MULTI Hz-13 数据保护 - - - -C18 未使用 C18 MULTI Hz-14 数据保护 - - - -C19 未使用 C19 MULTI Hz-15 数据保护 - - - -C20 点动频率 C20 JOG Hz 0.00 - 120.00 Hz 0.01 5.00 ∨C21 未使用 C21 PATTERN 数据保护 - - - -C22 未使用 C22 STAGE 1 数据保护 - - - -C23 未使用 C23 STAGE 2 数据保护 - - - -C24 未使用 C24 STAGE 3 数据保护 - - - -C25 未使用 C25 STAGE 4 数据保护 - - - -C26 未使用 C26 STAGE 5 数据保护 - - - -C27 未使用 C27 STAGE 6 数据保护 - - - - C28 未使用 C28 STAGE 7 数据保护 - - - -C29 未使用 - - - - - - C30 未使用 C30 FREQ CMD 2 数据保护 - - - -C31 模拟输入(端子12) C31 OFFSET 12 -100.0 -- +100.0 % 0.1 0.0 ∨ C32 偏值调整(端子C1) C32 OFFSET C1 -100.0 -- +100.0 % 0.1 0.0 ∨ C33 模拟输入滤波器 C33 REF FILTER 0.00 -- 5.00 s 0.01 0.05 ∨四、电动机1 参数功能码 名称 LCD 画面显示 可设定范围 单位 最小单位 出厂设定 运行时变更 备注 P01 电机1极数 P01 M1 POLES 2 - 14 极 2 4P02 电机1容量 P02 M1 CAP 0.01 - 45.00 KW 0.01 *1)P03 电机1额定电流 P03 M1 -Ir 0.00 - 2000 A 0.01 *1)P04 电机1自整定 P04 M1 TUN 1 0:不动作1:动作(电机停止状态下整定%R1,%X)2:动作(电机旋转状态下整定%R1,%X) - - 0P05 电机1在线自整 P05 M1 TUN 2 0:不动作1:动作 - - 0P06 电机1空载电流 P06 M1 -Io 0.00 - 2000 A 0.01 *1)P07 电机1%R1 P07 M1 -%R1 0.00 - 50.00 % 0.01 *1) ∨P08 电机1%X P08 M1 -%X 0.00 - 50.00 % 0.01 *1) ∨P09 电机1转差补偿量 P09 SLIP COMP 1 0.00 - 15.00 Hz - 0.00 ∨五、高级功能功能码名称LCD 画面显示可设定范围单位最小单位出厂设定运行时变更备注H01未使用------H02未使用------H03数据初始化H03 DATA INIT0:使用说明书设定值 1:初始值(出厂设定值) --H04未使用H04 AUTO-RESET数据保护----H05未使用H05 RESET INF数据保护----H06冷却风扇ON/OFF控制H06 FAN STOP0:不动作1:动作--∨H07未使用H07 ACC PTN数据保护----H08未使用H08 REV LOICK数据保护----H09未使用H09 START MODE 数据保护----H10未使用H10 ENERGY SAV 数据保护----H11减速模式H11 DEC MODE 0:常规减速1:自由运行--∨H12瞬时过电流限制H12 INST CL0:不动作1:动作--H13未使用H13 RESTART t数据保护----H14电流限制时频率降低率H14 FALL RATE0.00 - 100.00Hz/s0.0110.00∨H15未使用H15 HOLD V数据保护----H16未使用H16 SELFHOLD t数据保护----H17未使用-----H18转矩控制动作选择H18 TRQ CTRL0:不动作1:端子12(模拟输入)转矩指令(无极性)(0 - +10V/0 - 200%) 2:端子12(模拟输入)转矩指令(无极性)(0 - 10V/0- 200%) 3:端子12(模拟输入)转矩偏置(无极性)(0 - 10V/0- 100%) 4:端子C1(模拟输入)转矩偏置(无极性)(4 - 20mA/0 - 100%) --H19未使用H19 AUT RED-----H20未使用H20 PID MODE-----H21未使用H21 FB SIGNAL----H22未使用H22 P-GAIN-----H23未使用H23 I-GAIN-----H24未使用H24 D-GAIN-----H25未使用H26PTC 热敏电阻动作选择H26 PTC MODE0:不动作1:动作-∨H27PTC 热敏电阻动作值H27 PTC LEVEL0.00 - 5.00V0.011.60∨H28未使用H28 DROOP数据保护----H29未使用------H30链接功能动作选择H30 LINK FUNK0 - 3-∨H31RS485设定站址H31 RS485 ADDRESS1 - 31-11H32RS485设定发生出错时动作选择H32 MODE ON ER0 - 3--∨H33RS485设定出错处理定时器时间H33 TIMER0.0 - 60.0s0.12.0∨H34RS485设定传送速度H34 BAUD RATE0 - 4--1H35RS485 数据长度选择H35 LENGTH0: 8bit 1:7bit--∨H36RS485 奇偶位选择H36 PARITY0 - 2--H37RS485 停止位选择H37 STOP BITS0:2bit 1:1bit--∨H38RS485 检测通信中断时间H38 NO RES t0:无检测1:1 -60s1∨RS485 间隔响应时间H39 INTERVAL0.00 - 100s0.010.01∨六、电动机2参数功能码名称 LCD画面显示可设定范围单位最小单位出厂设定运行时变更备注A01 未使用 A01 MAX Hz-2 数据保护 - - - -A02 未使用 A02 BASE Hz-2 数据保护 - - - -A03 未使用 A03 RATED V-2 数据保护 - - - -A04 未使用 A04 MAX V-2 数据保护 - - - -A05 未使用 A05 TRQ BOOST 2 数据保护 - - - -A06 未使用 A06 ELCTRN OL 2 数据保护 - - - -A07 未使用 A07 OL LEVET 2 数据保护 - - - -A08 未使用 A08 TIME CNST 2 数据保护 - - - -A09 未使用 A09 TRQVECTOR 2 数据保护 - - - -A10 未使用 A10 M2 POLES 数据保护 - - - -A11 未使用 A11 M2-CAP 数据保护 - - - -A12 未使用 A12 M2-Ir 数据保护 - - - -A13 未使用 A13 M2 TUN 1 数据保护 - - - -A14 未使用 A14 M2 TUN 2 数据保护 - - - -A15 未使用 A15 M2-To 数据保护 - - - -A16 未使用 A16 M2-%R1 数据保护 - - - -A17 未使用 A17 M2-%X 数据保护 - - - -A18 未使用 A18 SLIP COMP 2 数据保护 - - - -七、选项功能码名称 LCD画面显示可设定范围单位最小单位出厂设定运行时变更备注o01 选择速度指令方式 o01 选项01 0:标准1:矢量控制 - - 1o02 速度指令滤波器时间常数 o02 选项02 0.000 - 5.000 s 0.001 0.020 ∨o03 编码器脉冲数 o03 选项03 20 - 3000 P 1 1024o04 ASR P常数(高速时) o04 选项04 0.01 - 200.00 倍 0.01 40.00 ∨o05 ASR I常数 o05 选项05 0.000 - 5.000 倍 0.001 0.003 ∨o06 速度检测用滤波器时间常数 o06 选项 06 0.000 - 5.000 - 0.001 0.003 ∨ o07 ASR P 常数切换频率1 o07 选项 07 0 - 120 Hz 1 5 ∨o08 ASR P 常数切换频率 2 o08 选项 08 0 -120 Hz 1 10 ∨o09 ASR P 常数(低速时) o09 选项 09 0.01 - 200.00 倍 0.01 40.00 ∨o10 多段速度指令一致定时器 o10 选项 10 0.000 - 0.100 s 0.001 0.005 ∨o11 加减速时间 9 o11 选项 11 0.01 - 3600 s 0.01 6.00 ∨o12 加减速时间 10 o12 选项 12 0 - 50 % 1 0o13 S 字设定 1 o13 选项 13 0 - 50 % 1 0o14 S 字设定 2 o14 选项 14 0 - 50 % 1 0o15 S 字设定 3 o15 选项 15 0 - 50 % 1 0o16 S 字设定 4 o16 选项 16 0 - 50 % 1 0o17 S 字设定 5 o17 选项 17 0 - 50 % 1 0o18 S 字设定 6 o18 选项 18 0 - 50 % 1 0o19 S 字设定 7 019 选项 19 0 - 50 % 1 0o20 S 字设定 8 o20 选项 20 0 - 50 % 1 0o21 S 字设定 9 o21 选项 21 0 - 50 % 1 0o22 S 字设定 10 o22 选项 22 0 - 50 % 1 0o23 运行指令一致定时器 o23 选项 23 0.000 - 0.100 s 0.001 0.000 ∨o24 转矩偏置起动定时器 o24 选项 24 0.00 - 1.00 s 0.01 0.2 ∨o25 制动释放定时器 o25 选项 25 0.00 - 5.00 s 0.01 0.1 ∨o26 制动抱闸定时器 o26 选项 26 0.00 - 5.00 s 0.01 0.1 ∨o27 速度一致检测幅 o27 选项 27 0.0 - 25.0 % 0.01 0.1 ∨o28 速度一致OFF 延迟 o28 选项 28 0.00 - 10.00 s 0.01 0.10 ∨o29 控制开关 o29 选项 29 0 - 3 - 1 0o30 Di 转矩偏置 0 o30 选项 30 -200 - +200 % 1 0 ∨o31 Di 转矩偏置 1 o31 选项 31 -200 - +200 % 1 0 ∨o32 Di 转矩偏置 2 o32 选项 32 -200 - +200 % 1 0 ∨o33 Di 转矩偏置 3 o33 选项 33 -200 - +200 % 1 0 ∨o34 Di 转矩偏置 4 o34 选项 34 -200 - +200 % 1 0 ∨o35 Ai 转矩偏置驱动侧 o35 选项 35 0.0 - 200.0 % 0.1 100.0 ∨o36 增益制动侧 o36 选项 36 0.0 - 200.0 % 0.1 100.0 ∨o37 转矩指令滤波器时间常数 o37 选项 37 0.000 - 5.000 s 0.001 0.000 ∨o38 起动时间 o38 选项 38 0.00 - 10.00 s 0.01 0.00o39 选择速度 0 o39 选项 39 000 - 111 - - 000o40 选择速度 1 o40 选项 40 000 -111 - - 001o41 选择速度 2 o41 选项 41 000 - 111 - - 010o42 选择速度 3 o42 选项 42 000 - 111 - - 011o43 选择速度 4 o43 选项 43 000 - 111 - - 100o44 选择速度5 o44 选项44 000 - 111 - - 101o45 选择速度6 o45 选项45 000 - 111 - - 110o46 选择速度7 046 选项46 000 - 111 - - 111富士FRE G11UD变频器故障代码表报警名称键盘面板显示动作内容LEDLCD过电流OC1OC DURING ACC加速时电动机过电流，输出电路相间或对地短路，变频器输出电流瞬时值超过过电流检出值时，过电流保护功能动作。
IRG4PH40UD中文资料
7/7/2000IRG4PH40UDINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEFeaturesV CES = 1200VV CE(on) typ. = 2.43V@V GE = 15V, I C = 21AUltraFast CoPack IGBT• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode• New IGBT design provides tighterparameter distribution and higher efficiency than previous generations• IGBT co-packaged with HEXFRED TM ultrafast,ultra-soft-recovery anti-parallel diodes for use in bridge configurations• Industry standard TO-247AC packageBenefits• Higher switching frequency capability than competitive IGBTs• Highest efficiency available• HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbingPD- 91621BParameterMax.UnitsV CESCollector-to-Emitter Breakdown Voltage 1200VI C @ T C = 25°C Continuous Collector Current 41I C @ T C = 100°C Continuous Collector Current 21I CM Pulsed Collector Current Q82I LMClamped Inductive Load Current R 82 AI F @ T C = 100°C Diode Continuous Forward Current 8.0I FM Diode Maximum Forward Current 130V GEGate-to-Emitter Voltage± 20V P D @ T C = 25°C Maximum Power Dissipation 160P D @ T C = 100°C Maximum Power Dissipation 65T J Operating Junction and-55 to + 150T STGStorage Temperature RangeSoldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )°CMounting torque, 6-32 or M3 screw.10 lbf •in (1.1N •m)Absolute Maximum RatingsWParameter Min.Typ.Max.UnitsR θJC Junction-to-Case - IGBT ––––––0.77R θJC Junction-to-Case - Diode–––––– 1.7°C/WR θCS Case-to-Sink, flat, greased surface–––0.24–––R θJA Junction-to-Ambient, typical socket mount ––––––40WtWeight–––6 (0.21)–––g (oz)Thermal Resistance 1IRG4PH40UDParameterMin.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on)—86130I C = 21A Qge Gate - Emitter Charge (turn-on)—1320nC V CC = 400V See Fig. 8Q gc Gate - Collector Charge (turn-on)—2944V GE = 15V t d(on)Turn-On Delay Time —46—T J = 25°C t r Rise Time —35—ns I C = 21A, V CC = 800V t d(off)Turn-Off Delay Time —97150V GE = 15V, R G = 10Ωt f Fall Time —240360Energy losses include "tail" and E on Turn-On Switching Loss — 1.80—diode reverse recovery.E off Turn-Off Switching Loss — 1.93—mJ See Fig. 9, 10, 18E ts Total Switching Loss — 3.73 4.6t d(on)Turn-On Delay Time —42—T J = 150°C, See Fig. 11, 18t r Rise Time —32—ns I C = 21A, V CC = 800V t d(off)Turn-Off Delay Time —240—V GE = 15V, R G = 10Ωt f Fall Time —510—Energy losses include "tail" and E ts Total Switching Loss —7.04—mJ diode reverse recovery.L E Internal Emitter Inductance —13—nH Measured 5mm from package C ies Input Capacitance —1800—V GE = 0V C oes Output Capacitance —120—pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance —18—ƒ = 1.0MHz t rr Diode Reverse Recovery Time —6395ns T J = 25°C See Fig.—106160T J = 125°C 14 I F = 8.0A I rr Diode Peak Reverse Recovery Current — 4.58.0A T J = 25°C See Fig.— 6.211T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge —140380nC T J = 25°C See Fig.—335880T J = 125°C 16 di/dt = 200A/µs di (rec)M /dtDiode Peak Rate of Fall of Recovery—133—A/µs T J = 25°C See Fig.During t b—85—T J = 125°C 17Switching Characteristics @ T J = 25°C (unless otherwise specified)Parameter Min.Typ.Max.Units ConditionsV (BR)CES Collector-to-Emitter Breakdown Voltage S 1200——V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage —0.43—V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage — 2.433.1I C = 21A V GE = 15V — 2.97—V I C = 41A See Fig. 2, 5— 2.47—I C = 21A, T J = 150°C V GE(th)Gate Threshold Voltage 3.0— 6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage —-11—mV/°C V CE = V GE , I C = 250µA g feForward Transconductance T 1624—S V CE = 100V, I C = 21A I CES Zero Gate Voltage Collector Current ——250µA V GE = 0V, V CE = 600V ——5000V GE = 0V, V CE = 600V, T J = 150°C V FM Diode Forward Voltage Drop — 2.63.3V I C = 8.0A See Fig. 13— 2.43.1I C = 8.0A, T J = 125°C I GES Gate-to-Emitter Leakage Current ——±100nA V GE = ±20VElectrical Characteristics @ T J = 25°C (unless otherwise specified)IRG4PH40UD 3Fig. 1 - Typical Load Current vs. Frequency(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4PH40UDFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4PH40UD 5Fig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageResistance Junction TemperatureFig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward CurrentCollector-to-Emitter Current110100246810FM F I n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A )Fo rwa rd Voltage Drop - V (V)IRG4PH40UD 7Fig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt01002003004005006001001000fdi /dt - (A/µs)R R Q - (n C )1010010001001000fdi /dt - (A/µs)d i (r e c )M /d t - (A /µs )40801201602001001000fdi /dt - (A/µs)t - (n s )r r1101001001000fdi /dt - (A/µs)I - (A )I R R MIRG4PH40UDFig. 18a - Test Circuit for Measurement ofI LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t ft1t2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrIRG4PH40UD 9V g G A T E S IG NA LDEV ICE U NDER T ES TCUR REN T D.U.T.V O LT A G E IN D.U.T.CUR REN T IN D1t0t1t2Figure 19. Clamped Inductive Load Test CircuitFigure 20. Pulsed Collector CurrentTest Circuit=800V4 X I C @25°CFigure 18e. Macro Waveforms for Figure 18a's Test CircuitIRG4PH40UDD im en sion s in M illim eters a nd (Inches)CONFORM S TO JEDEC OUTLINE TO-247AC (TO-3P)- D - 5.30 (.209)4.70 (.185)3.65 (.143)3.55 (.140) 2.50 (.089)1.50 (.059)43X0.80 (.031)0.40 (.016)2.60 (.102)2.20 (.087)3.40 (.133)3.00 (.118)3X0.25 (.010)MC A S4.30 (.170)3.70 (.145)- C -2X5.50 (.217)4.50 (.177)5.50 (.217)0.25 (.010)1.40 (.056)1.00 (.039)D MMB - A -15.90 (.626)15.30 (.602)- B -12320.30 (.800)19.70 (.775)14.80 (.583)14.20 (.559)2.40 (.094)2.00 (.079)2X 2X5.45 (.215)*N O T E S :1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14.5M , 1982.2 C O N T R O L L IN G D IM E N S IO N : IN C H.3 D IM E N S IO N S A R E S H O W N M IL LIM E T E R S (IN C H E S ).4 C O N F O R M S T O JE D E C O U T L IN E T O -247A C.L EA D A S S IG N M EN T S 1 - G A T E2 - C O L L E C T O R3 - E M IT T E R4 - C O L L E C T O R*LO N G E R LEA D ED (20m m )V ER S IO N A V A IL A B L E (T O -247AD )T O O R D ER A D D "-E" S U F F IX T O P A R T N U M B ERCase Outline TO-247ACNotes:Q Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20)R V CC =80%(V CES ), V GE =20V, L=10µH, R G = 10Ω (figure 19)S Pulse width ≤ 80µs; duty factor ≤ 0.1%.T Pulse width 5.0µs, single shot.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936Data and specifications subject to change without notice. 7/00。
美国电器公司Eaton PDG21G0040TFFL型号产品说明说明书
Eaton PDG21G0040TFFLEaton Power Defense molded case circuit breaker, Globally Rated, Frame 2, Single Pole, 40 A, 35kA/480V, T-M (Fxd-Fxd) TU, Standard Terminals Load Only (PDG2X1T100)Eaton Power Defense molded case circuit breakerPDG21G0040TFFL 78668704168988.9 mm 152.4 mm 35.1 mm 1.85 lb Eaton Selling Policy 25-000, one (1) year from the date of installation of theProduct or eighteen (18) months from thedate of shipment of the Product,whichever occurs first.RoHS Compliant CCC MarkedCSAIEC 60947-2UL 489Product NameCatalog Number UPCProduct Length/Depth Product Height Product Width Product Weight WarrantyCompliancesCertifications35 kAIC at 480 Vac260040 ASingle-pole600 VPD2 Global20 kAIC Icu/ 15/13 kAIC Ics/ 42 kAIC Icm @525V South Africa (IEC)65 kAIC @240V (UL)8 kAIC Icu/ 4 kAIC Ics/ 16.8 kAIC Icm @690V (IEC)10 kAIC Icu @125 Vdc18 kAIC @600V (UL/CSA)25 kAIC Icu/ 20 kAIC Ics/ 52.5 kAIC Icm @480V Brazil (IEC) 30 kAIC Icu/ 22.5 kAIC Ics/ 63 kAIC Icm @440V (IEC)35 kAIC @480V (UL)36 kAIC Icu/ 36 kAIC Ics/ 75.6 kAIC Icm @380-415V (IEC)10 kAIC Icu @250 Vdc55 kAIC Icu/ 55 kAIC Ics/ 121 kAIC Icm @240V (IEC) ThermomagneticClass AComplete breakerStandard Terminals Load Only600 Vac Eaton Power Defense PDG21G0040TFFL 3D drawingConsulting application guide - molded case circuit breakersPower Defense molded case circuit breaker selection posterPower Defense brochurePower Defense technical selling bookletPower Defense molded case circuit breakers - Frame 2 product aid Molded case circuit breakers catalogPDG4 CCC certificationPDG4 CB reportEU Declaration of Conformity - Power Defense molded case circuit breakersPDG2 CB reportPower Defense Declaration concerning California’s Proposition 65Power Defense Frame 2 tunnel terminal (aluminum), 50A, 1 pole instructions - IL012236EN H01Power Defense Frame 2 box terminal (aluminum), 225A, 1 pole instructions - IL012235EN H01Power Defense Frame 2 PDG2 and PDC(E)9 breaker instructions -IL012106ENPower Defense Frame 2 tunnel terminal kits - PDG2X1TA225K instructions- IL012239EN H01Power Defense Frame 2/3/4/5/6 voltage neutral sensor module wiring instructions – IL012316ENPower Defense Frame 2 locking devices and handle block instructions - IL012149ENPower Defense Frame 2 box terminal (steel), 100A, 1 pole instructions - IL012234EN H01Power Defense Frame 2 tunnel terminal (aluminum), 100A, 1 pole instructions - IL012237EN H01Power Defense Frame 1-2-3-4 IP door barrier assembly instructions - IL012278ENPower Defense Frame 2 tunnel terminal (aluminum), 150A, 1 poleInterrupt ratingFrameRated operation voltage (Ue) at AC - max Amperage RatingNumber of polesVoltage rating - maxCircuit breaker typeInterrupt rating rangeSwitch off techniqueClassCircuit breaker frame typeTerminalsVoltage rating 3D CAD drawing package Application notes BrochuresCatalogsCertification reports Installation instructionsEaton Corporation plc Eaton House30 Pembroke Road Dublin 4, Ireland © 2023 Eaton. All Rights Eaton is a registered trademark. All other trademarks areproperty of their respectiveT-M (Fxd-Fxd) TU instructions- IL012238EN H01Power Defense Frame 2 clamp terminal (steel), 20A, 1 pole instructions- IL012246EN H01Power Defense Frame 2 TMTU Aux, Alarm, ST and UVR Animated Instructions.rhPower Defense Frame 2 withTMTU, Shunt Trip_UVR Animated Instructions.rhPower Defense Frame 3 Variable Depth Rotary Handle Mechanism Installation How-To VideoEaton Power Defense for superior arc flash safetyPower Defense molded case circuit breakersPower Defense Frame 2 Variable Depth Rotary Handle Mechanism Installation How-To VideoPower Defense Frame 6 Trip Unit How-To VideoPower Defense BreakersPower Defense Frame 5 Trip Unit How-To VideoEaton Specification Sheet - PDG21G0040TFFLPower Defense time current curve Frame 2 - PD2Intelligent circuit protection yields space savingsMaking a better machineSingle and double break MCCB performance revisitedMolded case and low-voltage power circuit breaker healthMolded case and low-voltage breaker healthSafer by design: arc energy reduction techniquesTrip TypeInstallation videosMultimediaSpecifications and datasheetsTime/current curvesWhite papersReserved.owners./socialmedia。
IRF7450
12/22/01IRF7450SMPS MOSFETHEXFET ®Power MOSFET ParameterMax.UnitsI D @ T A = 25°C Continuous Drain Current, V GS @ 10V 2.5I D @ T A = 70°C Continuous Drain Current, V GS @ 10V 2.0A I DMPulsed Drain Current 20P D @T A = 25°C Power Dissipation 2.5W Linear Derating Factor 0.02W/°C V GS Gate-to-Source Voltage± 30V dv/dt Peak Diode Recovery dv/dt 11V/ns T J Operating Junction and-55 to + 150T STGStorage Temperature RangeSoldering Temperature, for 10 seconds300 (1.6mm from case )°CAbsolute Maximum RatingsNotes through are on page 8V DSSR DS(on) max I D200V0.17Ω@V GS = 10V2.5ASymbolParameterTyp.Max.UnitsR θJL Junction-to-Drain Lead –––20R θJAJunction-to-Ambient–––50°C/WThermal Resistancel High frequency DC-DC convertersBenefitsApplicationsl Low Gate to Drain Charge to Reduce Switching Lossesl Effective C OSS to Simplify Design (See App. Note AN1001)l Fully Characterized Avalanche Voltage and CurrentPD- 93893AIRF7450ParameterMin.Typ.Max.Units Conditions g fsForward Transconductance 2.6––––––S V DS = 50V, I D = 1.5A Q g Total Gate Charge–––2639 I D = 1.5A Q gs Gate-to-Source Charge––– 6.09.0nC V DS = 160V Q gd Gate-to-Drain ("Miller") Charge –––1218V GS = 10V,t d(on)Turn-On Delay Time –––10–––V DD = 100V t rRise Time––– 3.0–––I D = 1.5A t d(off)Turn-Off Delay Time –––17–––R G = 6.0Ωt f Fall Time–––18–––V GS = 10V C iss Input Capacitance –––940–––V GS = 0V C oss Output Capacitance–––160–––V DS = 25V C rss Reverse Transfer Capacitance –––33–––pF ƒ = 1.0MHz C oss Output Capacitance –––1100–––V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz C ossOutput Capacitance–––66–––V GS = 0V, V DS = 160V, ƒ = 1.0MHz C oss eff.Effective Output Capacitance–––25–––V GS = 0V, V DS = 0V to 160VDynamic @ T J = 25°C (unless otherwise specified)ns ParameterTyp.Max.UnitsE ASSingle Pulse Avalanche Energy –––230mJ I ARAvalanche Current–––2.5AAvalanche CharacteristicsStatic @ T J = 25°C (unless otherwise specified)Parameter Min.Typ.Max.Units ConditionsV (BR)DSS Drain-to-Source Breakdown Voltage 200––––––V V GS = 0V, I D = 250µA∆V (BR)DSS /∆T J Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, I D = 1mA R DS(on)Static Drain-to-Source On-Resistance ––––––0.17ΩV GS = 10V, I D = 1.5A V GS(th)Gate Threshold Voltage 3.0––– 5.5V V DS = V GS , I D = 250µA––––––25µAV DS = 200V, V GS = 0V––––––250V DS = 160V, V GS = 0V, T J = 125°CGate-to-Source Forward Leakage ––––––100V GS = 30VGate-to-Source Reverse Leakage ––––––-100nA V GS = -30VI GSSI DSS Drain-to-Source Leakage CurrentIRF7450 3Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer CharacteristicsFig 4. Normalized On-ResistanceVs. TemperatureV DS , Drain-to-Source Voltage (V)I D , D r a i n -t o -S o u r c e C u r r e n t (A )0.1110100V DS , Drain-to-Source Voltage (V)0.1110100I D , D r a i n -t o -S o u r c e C u r r e n t (A )IRF7450Gate-to-Source VoltageFig 5. Typical Capacitance Vs.Drain-to-Source VoltageForward VoltageFig 8. Maximum Safe Operating Area1101001000V DS , Drain-to-Source Voltage (V)10100100010000C , C a p a c i t a n c e (p F )1101001000V DS , Drain-toSource Voltage (V)0.1110100I D , D r a i n -t o -S o u r c e C u r r e n t (A )IRF7450 5Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-AmbientFig 10a.Switching Time Test CircuitV V d(on)rd(off)fFig 10b. Switching Time WaveformsV DDFig 9. Maximum Drain Current Vs.Ambient TemperatureIRF7450Fig 13. On-Resistance Vs. Gate VoltageFig 12. On-Resistance Vs. Drain CurrentFig 14a&b.Fig 15a&b. Unclamped Inductive Test circuitand WaveformsFig 15c. Maximum Avalanche EnergyVs. Drain CurrentI A 6810121416V GS, Gate -to -Source Voltage (V)0.100.150.200.250.300.35R D S (o n ), D r a i n -t o -S o u r c e O n R e s i s t a n c e (Ω)4812162024I D , Drain Current (A)0.120.140.160.18R D S ( o n ) , D r a i n -t o -S o u r c e O n R e s i s t a n c e ( Ω)IRF7450Repetitive rating; pulse width limited bymax. junction temperature.Notes:Starting T J = 25°C, L = 73mHR G = 25Ω, I AS = 2.5A.Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board330.00(12.992)M AX.14.40 ( .566 )12.40 ( .488 )N O T ES :1. CO NT RO LL ING D IM EN SIO N : M ILLIME TER.2. O U TLIN E C O NF O RM S T O E IA-481 & E IA -541.F EE D D IRE C TIO NTER M IN AL N UM B ER 112.3 ( .484 )11.7 ( .461 )8.1 ( .318 )7.9 ( .312 )N OTES :1. CO NTRO LLING DIM E NSIO N : M ILLIM ETER.2. ALL DIM ENS ION S ARESHO W N IN M ILL IM E TER S(INC HES).3. OU TL IN E CO N FO RM S TO EIA-481 & EIA-541.SO-8 Tape and ReelData and specifications subject to change without notice.This product has been designed and qualified for the industrial market.Qualification Standards can be found on IR ’s Web site.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .2/01。
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
Quarterly Reliability ReportforT0247 / T0220 Products Manufactured atIRGBIGBT / CoPackISSUE.3.October 1997Contents1Introduction2Reliability Information3Environmental Test Results4Environmental Test Conditions / Schematics 5Device Package and Frequency ListingsIntroductionThe reliability report is a summary of the test data collated since the implementation of the reliability programme.This report will be periodically updated typically on a quarterly basis.Future publications of this report will also include as appropriate additional information to assist the user in the interpretation of the data provided.The programme covers only IGBT/ CoPack manufactured products at IRGB,Holland Road,Oxted.The reliability data provided in this report are for the package types TO247and TO220.Further information regarding reliability data is available in the IR data book IGBT-3, pages E-65-E-72. This also, is available from the Oxted office.Reliability Engineering _____________________________________ Quality Manager _____________________________________Date _____________________________________Section2 Reliability InformationFit Rate / Equivalent Device HoursTraditionally,reliability results have been presented in terms of Mean-Time-To-Failure or Median-Time-To-Failure.While these results have their value,they do not necessarily tell the designer what he most needs to know.For example,the Median-Time-To-Failure tells the engineer how long it will take for half a particular lot of devices to fail.Clearly no designer wishes to have a50%failure rate within a reasonable equipment lifetime.Of greater interest,therefore,is the time to failure of a much smaller percentage of devices say1%or0.1%.For example,in a given application one failure per hundred units over five years is an acceptable failure rate for the equipment,the designer knows that time to accumulate1%failure of that components per unit,then no more than0.1%of the components may fail in five years.Therefore,the IGBT/CoPack reliability or operating-life data is presented in terms of the time it will take to produce a prescribed number of failures under given operating conditions.To obtain a perspective of failure rate from an example,let us assume that an electronic system contains1,000semiconductor devices,and that it can tolerate1% system failures per month. The equation for the device failure is:λ =Proportion allowed system failures X1X109=FITS In the case of the example,λ =0.01 Failures X1=109=14 FITS or 14 FITs or 14 failures per 109 devices hours.Using IGBT Reliability InformationClassic Bathtub Curve for failure rate of solid state devicesλ ( t )InfantReliability is the probability that a semiconductor device will perform its specified function in a given environment for a specified period of time.Reliability is quality over time & environmental conditions.Reliability can be defined as a probability of failure-free performance of a required function,under a specified environment,for a given period of time.The reliability of semiconductors has been extensively studied and the data generated from these works is widely used in industry to estimate the probabilities of system lifetimes.The reliability of a specific semiconductor device is unique to the technology process used in fabrication and to the external stress applied to the device.In order to understand the reliability of specific product like the IGBT it is useful to determine the failure rate associated with each environmental stress that IGBT's encounter.The values reported in this report are at a 60%upper confidence limit and the equivalent device hours at state of working temperature of 90°C.It has been shown that the failure rate of semiconductors in general.when followed for a long period of time,exhibits what has been called a "Bathtub Curve"when plotted against time for a given set of environmental conditions.tL o g F a i l u r eThe IGBT StructureThe silicon cross-section of an Insulated Gate Bipolar Transistor(IGBT),theterminal called Collector is,actually,the Emitter of the PNP.In spite of itssimilarity to the cross-section of a power MOSFET,operating of the twotransistors is fundamentally different,the IGBT being a minority carrier device.Except for the P+substrate is virtually identical to that of a power MOSFET,both devices share a similar polysilicon gate structure and P wells with N+source contacts.In both devices the N-type material under the P wells is sizedin thickness and reistivity to sustain the full voltage rating of the device.However,in spite of the many similarities,he physical operation of the IGBT iscloser to that of a bipolar transistor than to that of a power MOSFET.This isdue to the P+substrate which is responsible for the minority carrier injectioninto the N regtion and the resulting conductivity modulation,a significant shareof the conduction losses occur in the N region, typically 70% in a 500v device.The part number itself contains in coded form the key features of the IGBT.Anexplanation of the nomenclature in contained below.IR G4B C40S DDiode International Rectifier Speed DesignatorIGBT S StandardGeneration Modifier F FastVoltage Designator Die Size M Short Cicuit Fast Package Designator C 600v E 800v U UltraFastB T0220 F 900v G 1000v K Short Circuit UltraFastP T0247H 1200vBasic IGBT StructureSection3 Environmental Test ResultsT0247 PackageJunction Temperature :Tj = as specified belowApplied Bias:Vge = 0VVce = 80% of maximum rated BVcesN Channel MID FREQUENCY ( Fast )EQUIVALENT FAILURE RATE @ DEVICE DATE TEMP VOLTAGE QTY ACTUAL FAILURES DEV-HRS90°C & 60% UCL TYPE CODE MAX TEST@ 90°CTIME#MODE FITs(deg C)(V)(hours)(note b)(note a) IRGPC30FD293441506002010800 2.01E+06456 IRGPC50FD292371506005920080 1.10E+0783TOTALS7930880 1.30E+0770 N Channel HIGH FREQUENCY ( Ultra-Fast )EQUIVALENT FAILURE RATE @ DEVICE DATE TEMP VOLTAGE QTY ACTUAL FAILURES DEV-HRS90°C & 60% UCL TYPE CODE MAX TEST@ 90°CTIME#MODE FITs(deg C)(V)(hours)(note b)(note a) IRGPC40U95381506002020080 3.73E+06245 IRGPC40U96201506002020080 3.73E+06245 IRGPC40UD292371506002010080 1.87E+06489 IRG4PC40UD296431506002020300 3.78E+06243 IRGPC50UD293461506002010800 2.01E+06456 IRGPH60UD29450150120010100809.37E+05977TOTALS11091420 1.61E+0757NOTESa. One FIT represents one failure in one billion (1.0E+09) hours.b. FAILURE MODES:T0220 PackageJunction Temperature:Tj = as specified belowApplied Bias:Vge = 0VVce = 80% of maximum rated BVcesN Channel LOW FREQUENCY ( Standard )EQUIVALENT FAILURE RATE @ DEVICE DATE TEMP VOLTAGE QTY ACTUAL FAILURES DEV-HRS90°C & 60% UCL TYPE CODE MAX TEST@ 90°CTIME#MODE FITs(deg C)(V)(hours)(note b)(note a) IRGBC20S95441506002020080 3.73E+06245 IRGBC40S96061506002020080 3.73E+06245TOTALS40401607.47E+06123 N Channel MID FREQUENCY ( Fast )EQUIVALENT FAILURE RATE @ DEVICE DATE TEMP VOLTAGE QTY ACTUAL FAILURES DEV-HRS90°C & 60% UCL TYPE CODE MAX TEST@ 90°CTIME#MODE FITs(deg C)(V)(hours)(note b)(note a) IRGBC30F95371506002020080 3.73E+06245 IRGNC30FD296401506002020070 3.73E+06245 IRGBF30F96131509002020080 3.73E+06245TOTALS6060230 1.12E+0782NOTESa. One FIT represents one failure in one billion (1.0E+09) hours.b. FAILURE MODES:HIGH TEMPERATURE REVERSE BIAS (HTRB)T0220 PackageJunction Temperature:Tj = as specified belowApplied Bias:Vge = 0VVce = 80% of maximum rated BVcesN Channel HIGH FREQUENCY ( Ultra-Fast )EQUIVALENT FAILURE RATE @ DEVICE DATE TEMP VOLTAGE QTY ACTUAL FAILURES DEV-HRS90°C & 60% UCL TYPE CODE MAX TEST@ 90°CTIME#MODE FITs(deg C)(V)(hours)(note b)(note a) IRGBC20K96131506002020080 3.73E+06245 IRGBC30U96051506002020080 3.73E+06245 IRGB440U96431504002020080 3.73E+06245TOTALS6060240 1.12E+0782NOTESa. One FIT represents one failure in one billion (1.0E+09) hours.b. FAILURE MODES:Junction Temperature:Tj = as specified belowVc = Ve = 0VVg = as specifiedN Channel MID FREQUENCY ( Fast )FAILURE RATE @ DEVICE DATE TEMP GATE QTY ACTUAL FAILURES DEV-HRS90°C & 60% UCL TYPE CODE BIAS TEST@ 90°CTIME#MODE FITs(deg C)(V)(hours)(note b)(note a) IRGPF30F9642150202020070 2.46E+053724 IRGPC50FD29237150202020880 2.56E+053579TOTALS4040950 5.02E+051825 N Channel HIGH FREQUENCY ( Ultra-Fast )EQUIVALENT FAILURE RATE @ DEVICE DATE TEMP GATE QTY ACTUAL FAILURES DEV-HRS90°C & 60% UCL TYPE CODE BIAS TEST@ 90°CTIME#MODE FITs(deg C)(V)(hours)(note b)(note a) IRGPC40U9538150202020080 2.46E+053722 IRGPC40U9620150202020080 2.46E+053722 IRG4PC50U9721150202022130 2.71E+053377 IRG4PC40UD29643150202020390 2.50E+053665TOTALS8082680 1.01E+06904NOTESa. One FIT represents one failure in one billion (1.0E+09) hours.b. FAILURE MODES:Junction Temperature:Tj = as specified belowVc = Ve = 0VVg = as specifiedN Channel LOW FREQUENCY ( Standard )FAILURE RATE @ DEVICE TEMP GATE ACTUAL FAILURES DEV-HRSTYPE BIAS TESTTIME#FITs(deg C)(hours)(note b)IRGBC20S954420200 2.46E+05IRGBC40S960520200 2.46E+05TOTALS400 4.92E+05N Channel MID FREQUENCY ( Fast )EQUIVALENT FAILURE RATE @ DATE TEMP QTY ACTUAL DEV-HRS90°C & 60% UCL TYPE BIAS@ 90°CTIME MODE FITs(V)(hours)(note a) IRGBC30F15020200803722 IRGBC30FD215020209503567 IRGBC30FD215020********* IRGBF30F15020200803722TOTALS81180921NOTESb. FAILURE MODES:T0220 PackageJunction Temperature:Tj = as specified belowApplied Bias:Vc = Ve = 0VVg = as specifiedN Channel HIGH FREQUENCY ( Ultra-Fast )EQUIVALENT FAILURE RATE @ DEVICE DATE TEMP GATE QTY ACTUAL DEV-HRSTYPE CODE BIAS TEST@ 90°CTIME#MODE FITs(deg C)(V)(hours)96131502020200803722960515020202008037229641150202020070372496431502020205403639TOTALS8080770925NOTESa. One FIT represents one failure in one billion (1.0E+09) hours.b. FAILURE MODES:TEMPERATURE & HUMIDITY (THB)T0247 PackageJunction Temperature:85°CRelative Humidity:85% rhApplied Bias:Vge = 0VVce = as specifiedN Channel MID FREQUENCY ( Fast )DEVICE DATE COLLECTOR QTY ACTUAL FAILURESTYPE CODE VOLTAGE TESTTIME#MODE(V)(hours)(note b) IRGPF30F96421002020000TOTALS2020000N Channel HIGH FREQUENCY ( Ultra-Fast )DEVICE DATE COLLECTOR QTY ACTUAL FAILURESTYPE CODE VOLTAGE TESTTIME#MODE(V)(hours)(note b) IRGPC40U953850020150431IRGPC40U962050020150441IRG4PC40UD296431002020510IRGPH60UD294505001010080TOTALS7060677NOTESb. F AILURE MODES:1.3devices failed@1504hrs85/85and4devices failed@1552HRS85/85all the failures were due to terminationstructure corrosion, caused by moisture ingression.T0220 PackageJunction Temperature:85°CRelative Humidity:85% rhApplied Bias:Vge = 0VVce = as specifiedN Channel LOW FREQUENCY ( Standard )DEVICE DATE COLLECTOR QTY ACTUAL FAILURESTYPE CODE VOLTAGE TESTTIME#MODE(V)(hours)(note b) IRGBC20S95445002010080IRGBC30S96431002020510IRGBC40S96065002010080TOTALS6040670N Channel MID FREQUENCY ( Fast )DEVICE DATE COLLECTOR QTY ACTUAL FAILURESTYPE CODE VOLTAGE TESTTIME#MODE(V)(hours)(note b) IRGBC30F953760020100811IRGBF30F96139002010080IRGBC30FD296401002020510TOTALS6040671NOTESb. F AILURE MODES:11device failed@1008hrs85/85it was due to terminationstructure corrosion, caused by moisture ingression.T0220 PackageJunction Temperature:85°CRelative Humidity:85% rhApplied Bias:Vge = 0VVce = as specifiedN Channel HIGH FREQUENCY ( Ultra-Fast )DEVICE DATE COLLECTOR QTY ACTUAL FAILURESTYPE CODE VOLTAGE TESTTIME#MODE(V)(hours)(note b) IRG4BC30U96411002020000IRGB440U96431002020510IRGBC20K961350020100831TOTALS6050593NOTESb. F AILURE MODES:13devices failed@1008hrs85/85all the failures were dueto termination structure corrosion,caused by moistureingression.T0247 PackageTemperature Cycle:Tmin = - 55°C, Tmax = + 150°CCycle time:25 minutesBias NoneN Channel MID / HIGH FREQUENCYDEVICE DATE QTY ACTUAL FAILURESTYPE CODE CYCLES#MODE(note b) IRGPC30FD293443910000IRGPC50FD292378021740IRGPC40U95382020080IRGPC40U96202020550IRGPC40UD292374010870IRG4PC40UD296432014960IRG4PC50U97212020860IRGPC50UD293463810000IRGPF30F96422020150IRGPH60UD294501010440TOTALS307159650NOTESb. FAILURE MODES:T0220 PackageTemperatre Cycle:Tmin = - 55°C, Tmax = + 150°CCycle Time25 minutesBias NoneN Channel LOW / MID / HIGH FREQUENCYDEVICE DATE QTY ACTUAL FAILURESTYPE CODE CYCLES#MODE(note b) IRGBC20S95442020620IRGBC40S96062020080IRGBC30S96432020170IRGBC30F95372020080IRGBF30F96132020320IRGBC20K96132020320IRGBC30U96052020080IRG4BC30U96142020150IRGB440U96432021070IRGBC30FD296402020770IRGBC30FD296432020430TOTALS220224090NOTESb. FAILURE MODES:POWER CYCLING (P/C) unbiasedT0247 PackageBias:Set to give ∆ T = 100°CTemperature:Tj = ∆ 100°CDuration:10000 CyclesTest Points:2500, 5000, 10000 NominalN Channel HIGH FREQUENCY ( Ultra-Fast )FAILURESDEVICE DATE QTY ACTUALTYPE CODE(hours)#MODE(note b) IRGPC40U962020100000TOTALS20100000NOTESb. FAILURE MODES:T0247 PackagePressure:15 Ibs psigTemperature:121°CHumidity:100%Bias:NoneN Channel MID / HIGH FREQUENCYFAILURESDEVICE DATE QTY ACTUALTYPE CODE(hours)#MODE(note b) IRGPF30F964220960IRGPC40U953820960IRGPC40U962020960IRG4PC40UD2964320960IRG4PC50U972120960TOTALS1004800NOTESb. FAILURE MODES:T0220 PackagePressure:15 Ibs psigTemperature:121°CHumidity:100%Bias:NoneN Channel LOW / MID / HIGH FREQUENCYFAILURESDEVICE DATE QTY ACTUALTYPE CODE(hours)#MODE(note b) IRGBC20S954420960IRGBC30S964320960IRGBC40S960620960IRGBC30F953720960IRGBF30F961320960IRGBC20K961320960IRGBC30U960620960TOTALS1406720NOTESb. FAILURE MODES:Section4Environmental Test Conditions / SchematicsHIGH TEMPERATURE REVERSE BIAS (HTRB)Test circuit ConditionsBias:Vce = As required Temperature:Tmax Duration:2000 Hours nominalTest points:168, 500, 1000,1500, 2000, Hours nominal D = Diode for CoPack devices onlyPurposeFailure ModesSensitive ParametersV (BR)CES, I CES, I GES, V GE(th)High temperature reverse bias (HTRB)burn-in is to stress the devices with the applied voltage in the blocking mode while elevating the junction temperature.This will accelerate any blocking voltage degradation process.The primary failure mode for HTRB stress is a gradual degradation of the breakdown characteristics or V (BR)CES .This degradation has been attributed to the presence of foreign materials and polar/ionic contaminants.These materials,migrating under application of electric field at high temperature,can perturb the electric field termination structure.Extreme care must be exercised in the course of a long term test to avoid potential hazards such as electrostatic discharge or electrical overstress to the gate during test.Failures arising from this abuse can be virtually indistinguishable from true HTRB failures which results from the actual stress test.HIGH TEMPERATURE GATE BIAS (HTGB)Test circuit ConditionsBias:Vge = As required Temperature:Tmax Duration:2000 Hours nominal Test points:168, 500, 1000,1500, 2000 Hours nominal.D = Diode for CoPack devices onlyPurposeFailure ModesSensitive ParametersI CES,V GE(th)The purpose of High Temperature Gate Bias is to stress the devices with the applied bias to the gate while at elevated junction temperature to accelerate time dependent dielectric breakdown of the gate structure.The primary failure modes for long term gate stress is a rupture of the gate oxide,causing either a resistive short between gate-to-emitter or gate-to-collector or what appears to be a low breakdown diode between the gate and source.The oxide breakdown has been attributed to the degradation in time of existing defects in the thermally grown oxide.These defects can take form of localized thickness variations,structural anomalies or the presence of sub-micron particulate, within the oxide.As with HTRB,extreme care must be exercised in the course of a long term test to avoid potential hazards such as electrostatic discharge or electrical overstress to the gate during test.Failures arising from this abuse are virtually indistinguishable from true oxide breakdown which result from the actual stress test.TEMPERATURE & HUMIDITY (THB)Test circuit ConditionsBias:Vce = 100% of maximum ratedV (BR)CES up to 500V: 500V forall devices with rated V (BR)CESgreater than 500V *Temperature:85°CRelative Humidity:85%Duration:2000 Hours nominalTest points:168, 500, 1000,1500, 2000 Hours nominal.* Devices manufactured since weekcode 9640 the applied bias: V (BR)CES =Vmax or 100v which ever the lesser D = Diode for CoPack devices only PurposeFailure ModesSensitive ParametersV (BR)CES,V CE(on)Temperature and Humidity bias testing for non-hermetic packages is to subject the devices to extremes of temperature and humidity to examine the ability of the package to withstand the deleterious effect of the humid environment.There are two primary failure modes which have been observed.The first failure mode comes about as a result of the ingression of water molecules into the active area on the surface of the die.Once sufficient water has accumulated in the region of the electric field termination structure on the die,the perturbation of that field begins to degrade the breakdown characteristics of the device.The second failure mode that has been observed is due to cathodic corrosion of the aluminum emitter bonding pad.As with first failure mode,water will ingress to the top of the die.There,in the presence of applied bias,an electric current through the few monolayers of water will begin to cause the bond pad to dissolve.Eventually.the corrosion will proceed to the point where the current capability of the device is increased and become unstable.The dominance of either of these failure modes is basically determined by the amount of bias present during test.Under low bias conditions,the corrosion proceeds slowly,so the first failure mode will proceed very rapidly and the device will fail due to on-resistance before the breakdown characteristics can degrade.TEMPERATURE CYCLING (T/C) UnbiasedConditionsTemperature:Tmin = - 55°CTmax = + 150°CBias:UnbiasedDuration:2000 CyclesTest points:250,500,1000,1500,2000 NominalPurposeTemperature Cycling simulates the extremes of thermal stresses which devices willencounter in the actual circuit applications in combination with potentially extremeoperating ambient temperatures.Some equipment is destined to be used in extremeenvironments, and subject to daily temperature cycles.Failure ModesThe primary failure mode for temperature cycling is a thermal fatigue of the silicon/metalinterfaces and metal/metal interfaces.The fatigue results from thermomechanicalstresses due to heating and cooling and will cause electrical or thermal performance todegrade.If the degradation occurs at the header/die interface,then the thermal impedance,RθJCwill begin to increase well before any electrical effect is seen.If the degradation occurs at the wire bond/die interface or the wire bond/bond postinterface,then on resistance,V CE(on),will slowly increase or become unstable with time.The thermal impedance,when measured during this time,may appear to decrease orchange erratically.The mechanical stresses from the temperature can also propagate fractures in the siliconwhen the die is thermally mismatched to the solder/heat sink system.These fractureswill manifest themselves in the form of shorted gates or degraded breakdowncharacteristics (V(BR)CES)Sensitive ParametersI CES,V(BR)CES, RθJC,V CE(on)POWER CYCLING (P/C) Unbiased Test circuit ConditionsBiasSet to give ∆ T = 100°C TemperatureTj = ∆ 100°CDuration10000 Cycles Test points D = Diode for CoPack devices onlyPurposeFailure ModesSensitive ParametersI CES , V (BR)CES ,R θJC , V CE(on)The purpose of Power Cycling is to simulate the thermal and current pulsing stresses which devices will encounter in actual circuit applications when either the equipment is turned on and off or power is applied to the device in short bursts interspersed with quiescent,low power periods.The simulation is achieved by the on/off application of power to each device while they are in the active linear region.The primary failure mode for power cycling is a thermal fatigue of the silicon/metal interfaces and metal/metal interfaces.The fatigue,due to the thermomechanical stresses from the heating and cooling,will cause electrical or thermal performance or degrade.If the degradation occurs at the header/die interface,then the thermal impedance R θJC ,will begin to increase well before any electrical effect is seen.If the degradation occurs at the wire bond/die interface or the wire bond/post interface,then on resistance,V CE(on),will slowly increase or become unstable with time.The thermal impedance,when measured during this time may appear to decrease or change erratically.The mechanical stresses from the application of power can also propagate fractures in the silicon when the die is thermally mismatched to the solder/heat sink system.These fractures will manifest themselves in the form of shorted gates or degraded breakdown characteristics (V (BR)CES ).ACCELERATEDMOISTURE RESISTANCE (A/C)UnbiasedConditionsTemperature:121°CPressure:15Ibs psigBias:NoneDuration:96 Hours nominalTest points:96 HoursPurposeAccelerated Moisture Resistance test is performed to evaluate the moisture resistanceof non-hermetic packages.Severe conditions of pressure,humidity and temperatureare applied that accelerate the penetration of moisture through the interface of theencapsulant and the conductors that pass through it.Failure ModesThere are two failure modes which have been observed.The first mode,degradationof the breakdown characteristics of the devices, can occur.The second failure mode that has been observed is due to cathodic corrosion ofaluminum emitter bonding pad.Water will ingress to the top of the die.It is possiblefor contaminants to work their way into the active area of the device while underpressure in the presence of water.For that reason,the devices and test board arecleaned prior to use.Then,throughout the course of the testing,the parts and the testboards are never brought into contact with human contaminant.Sensitive ParametersV(BR)CES, V CE(on)Section5Device Package and Frequency ListingsT0247 Generation III PackagePart Number Channel Voltage Speed Hex Size Frequency Family IRGPC30S N600Standard3Low Frequency IRGPC40S N600Standard4Low Frequency IRGPC50S N600Standard5Low Frequency IRGPH20S N1200Standard2Low Frequency IRGPH30S N1200Standard3Low Frequency IRGPH40S N1200Standard4Low Frequency IRGPH50S N1200Standard5Low Frequency IRGPC20F N600Fast2Mid Frequency IRGPC20M N600Short Circuit Rated Fast2Mid Frequency IRGPC20MD2N600Short Circuit Rated Fast2Mid Frequency IRGPC30F N600Fast3Mid Frequency IRGPC30M N600Short Circuit Rated Fast3Mid Frequency IRGPC30FD2N600Fast3Mid Frequency IRGPC30MD2N600Short Circuit Rated Fast3Mid Frequency IRGPC40F N600Fast4Mid Frequency IRGPC40M N600Short Circuit Rated Fast4Mid Frequency IRGPC40FD2N600Fast4Mid Frequency IRGPC40MD2N600Short Circuit Rated Fast4Mid Frequency IRGPC50F N600Fast5Mid Frequency IRGPC50M N600Short Circuit Rated Fast5Mid Frequency IRGPC50FD2N600Fast5Mid Frequency IRGPC50MD2N600Short Circuit Rated Fast5Mid Frequency IRGPF20F N900Fast2Mid Frequency IRGPF30F N900Fast3Mid Frequency IRGPF40F N900Fast4Mid Frequency IRGPF50F N900Fast5Mid Frequency IRGPH20M N1200Short Circuit Rated Fast2Mid Frequency IRGPH30MD2N1200Short Circuit Rated Fast3Mid Frequency IRGPH40F N1200Fast4Mid Frequency IRGPH40M N1200Short Circuit Rated Fast4Mid Frequency IRGPH40FD2N1200Fast4Mid Frequency IRGPH40MD2N1200Short Circuit Rated Fast4Mid Frequency IRGPH50F N1200Fast5Mid Frequency IRGPH50M N1200Short Circuit Rated Fast5Mid Frequency IRGPH50FD2N1200Fast5Mid Frequency IRGPH50MD2N1200Short Circuit Rated Fast5Mid FrequencyIRGP420U N500Ultra-Fast2High Frequency IRGP430U N500Ultra-Fast3High Frequency IRGP440U N500Ultra-Fast4High Frequency IRGP440UD2N500Ultra-Fast4High Frequency IRGP450U N500Ultra-Fast5High Frequency IRGP450UD2N500Ultra-Fast5High Frequency IRGPC20K N600Short Circuit Rated Ultra-Fast2High Frequency IRGPC20U N600Ultra-Fast2High Frequency IRGPC20KD2N600Short Circuit Rated Ultra-Fast2High Frequency IRGPC30K N600Short Circuit Rated Ultra-Fast3High Frequency IRGPC30U N600Ultra-Fast3High Frequency IRGPC30KD2N600Short Circuit Rated Ultra-Fast3High Frequency IRGPC30UD2N600Ultra-Fast3High Frequency IRGPC40K N600Short Circuit Rated Ultra-Fast4High Frequency IRGPC40U N600Ultra-Fast4High Frequency IRGPC40KD2N600Short Circuit Rated Ultra-Fast4High Frequency IRGPC40UD2N600Ultra-Fast4High Frequency IRGPC50K N600Short Circuit Rated Ultra-Fast5High Frequency IRGPC50U N600Ultra-Fast5High Frequency IRGPC50KD2N600Short Circuit Rated Ultra-Fast5High Frequency IRGPC50UD2N600Ultra-Fast5High Frequency IRGPH50K N1200Short Circuit Rated Ultra-Fast5High Frequency IRGPH50KD2N1200Short Circuit Rated Ultra-Fast5High FrequencyT0247 Generation IV PackagePart Number Channel Voltage Speed Hex Size Frequency FamilyIRG4P254S N250Standard5Low Frequency IRG4PC30S N600Standard3Low Frequency IRG4PC40S N600Standard4Low Frequency IRG4PC50S N600Standard5Low FrequencyIRG4PC30F N600Fast3Mid Frequency IRG4PC30FD N600Fast3Mid Frequency IRG4PC40F N600Fast4Mid Frequency IRG4PC40FD N600Fast4Mid Frequency IRG4PC50F N600Fast5Mid Frequency IRG4PC50FD N600Fast5Mid Frequency IRG4PC30U N600Ultra-Fast3High Frequency IRG4PC30UD N600Ultra-Fast3High Frequency IRG4PC30K N600Short Circuit Rated Ultra-Fast3High Frequency IRG4PC40U N600Ultra-Fast4High Frequency IRG4PC40UD N600Ultra-Fast4High Frequency IRG4PC40K N600Short Circuit Rated Ultra-Fast4High Frequency IRG4PC40KD N600Short Circuit Rated Ultra-Fast4High Frequency IRG4PC50U N600Ultra-Fast5High Frequency IRG4PC50UD N600Ultra-Fast5High Frequency IRG4PH50U N1200Ultra-Fast5High Frequency IRG4PH50UD N1200Ultra-Fast5High FrequencyT0220 Generation III PackagePart Number Channel Voltage Speed Hex Size Frequency FamilyIRGBC20S N600Standard2Low Frequency IRGBC30S N600Standard3Low Frequency IRGBC40S N600Standard4Low FrequencyIRGBC20F N600Fast2Mid Frequency IRGBC20M N600Short Circuit Rated Fast2Mid Frequency IRGBC20FD2N600Fast2Mid Frequency IRGBC20MD2N600Short Circuit Rated Fast2Mid Frequency IRGBC30F N600Fast3Mid Frequency IRGBC30M N600Short Circuit Rated Fast3Mid Frequency IRGBC30FD2N600Fast3Mid Frequency IRGBC30MD2N600Short Circuit Rated Fast3Mid Frequency IRGBC40F N600Fast4Mid Frequency IRGBC40M N600Short Circuit Rated Fast4Mid Frequency IRGBF20F N900Fast2Mid Frequency IRGBF30F N900Fast3Mid Frequency IRGB420U N500Ultra-Fast2High Frequency IRGB420UD2N500Ultra-Fast2High Frequency IRGB430U N500Ultra-Fast3High Frequency IRGB430UD2N500Ultra-Fast3High Frequency IRGB440U N500Ultra-Fast4High Frequency IRGBC20K N600Short Circuit Rated Ultra-Fast2High Frequency IRGBC20U N600Ultra-Fast2High Frequency IRGBC20KD2N600Short Circuit Rated Ultra-Fast2High Frequency IRGBC20UD2N600Ultra-Fast2High Frequency IRGBC30K N600Short Circuit Rated Ultra-Fast3High Frequency IRGBC30U N600Ultra-Fast3High Frequency IRGBC30KD2N600Short Circuit Rated Ultra-Fast3High Frequency IRGBC30UD2N600Ultra-Fast3High Frequency IRGBC40K N600Short Circuit Rated Ultra-Fast4High Frequency IRGBC40U N600Ultra-Fast4High Frequency。