GT30J324资料

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J324
High Power Switching Applications
Fast Switching Applications
· The 4th generation
· Enhancement-mode
· Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: t f = 0.05 µs (typ.)
Low switching loss : E on = 1.00 mJ (typ.)
:
E off = 0.80 mJ (typ.)
· Low saturation voltage: V CE (sat) = 2.0 V (typ.)
· FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics Symbol
Rating
Unit Collector-emitter voltage V CES600 V
Gate-emitter voltage V GES
±20 V
DC I C 30 Collector current
1 ms I CP 60
A
DC I F 30 Emitter-collector forward
current 1 ms I
FM 60
A
Collector power dissipation
(Tc = 25°C)
P C 170 W Junction temperature T j150 °C Storage temperature range T stg−55 to 150 °C
Thermal Characteristics
Characteristics Symbol
Max
Unit Thermal resistance (IGBT) R th (j-c) 0.735 °C/W Thermal resistance (diode) R th (j-c) 1.90 °C/W Equivalent Circuit Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-16C1C
Weight: 4.6 g (typ.)
Gate
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I GES V GE = ±20 V, V CE = 0 ― ― ±500
nA
Collector cut-off current I CES V CE = 600 V, V GE = 0 ― ― 1.0 mA Gate-emitter cut-off voltage V GE (OFF) I C = 3 mA, V CE = 5 V 3.5
― 6.5 V
Collector-emitter saturation voltage V CE (sat) I C = 30 A, V GE = 15 V
― 2.0 2.45V
Input capacitance
C ies V CE = 10 V, V GE = 0, f = 1 MHz
― 4650 ― pF
Turn-on delay time t d (on) ― 0.09 ― Rise time
t r ― 0.07 ― Turn-on time t on ―
0.24
―
Turn-off delay time t d (off) ― 0.30 ― Fall time t f ― 0.05 ― Switching time
Turn-off time t off ―
0.43
―
µs
Turn-on switching
loss
E on ― 1.00 ―
Switching loss
Turn-off switching loss
E off Inductive Load V CC = 300 V, I C = 30 A V GG = +15 V, R G = 24 Ω
(Note 1)(Note 2)
― 0.80
―
mJ
Peak forward voltage V F I F = 30 A, V GE = 0 ―
― 3.8 V
Reverse recovery time
t rr
I F = 30 A, di/dt = −100 A/µs ― 60 ― ns
Note 1: Switching time measurement circuit and input/output waveforms
Note 2: Switching loss measurement waveforms
Collector-emitter voltage V CE (V)
I C – V CE
C o l l e c t o r c u r r e n t I C (A )
Gate-emitter voltage V GE (V)
V CE – V GE
C o l l e c t o r -e m i t t e r v o l t a g e V C E (V )
Gate-emitter voltage V GE (V)
V CE – V GE
C o l l e c t o r -e m i t t e r v o l t a g e V C E (V )
Gate-emitter voltage V GE (V)
V CE – V GE
C o l l e c t o r -e m i t t e r v o l t a g e V C E (V )
Gate-emitter voltage V GE (V)
I C – V GE
C o l l e c t o r c u r r e n t I C (A )
Case temperature Tc (°C)
V CE (sat) – Tc
C o l l e c t o r -e m i t t e r s a t u r a t i o n v o l t a g e V C E (s a t ) (V )
4
8
12
16
20
4
8
12
16
20
4
8
12
16
20
−60
−20
20
60
100
140
Collector current I C
(A)
S w i t c h i n g t i m e t o f f , t f , t d (o f f ) (µs )
Switching time t on , t r , t d (on) – R G
S w i t c h i n g t i m e t o n , t r , t d (o n ) (µs )
Switching time t on , t r , t d (on) – I C
S w i t c h i n g t i m e t o n , t r , t d (o n ) (µs )
Switching time t off , t f , t d (off) – R G
S w i t c h i n g t i m e t o f f , t f , t d (o f f ) (µs )
Collector current I C (A)
Switching time t off , t f , t d (off) – I C
Switching loss E on , E off – R G
Collector current I C (A)
Switching loss E on , E off – I C
S w i t c h i n g l o s s E o n , E o f f (m J )
Gate resistance R G (Ω) Gate resistance R G (Ω) Gate resistance R G (Ω)
S w i t c h i n g l o s s E o n , E o f f (m J )
1 10 30 100 300 1000
3
5 10 15 20 25 30
1
0.3
5 10 15 20 25 30
C o l l e c t o r c u r r e n t I C (A )
R e v e r s e r e c o v e r y c u r r e n t I r r (A )
Collector-emitter voltage V CE (V) C – V CE
C a p a c i t a n c e C (p F )
G a t e -e m i
t t e r v o l t a g e V G E (V )
Gate charge Q G
(nC)
V CE , V GE – Q G
C o l l e c t o r -e m i t t e r v o l t a g e V C E (V )
Forward voltage V F (V) I F – V F
F o r w a r d c u r r e n t I F (A )
R e v e r s e r e c o v e r y t i m e t r r (n s )
Forward current I F (A)
t rr , I rr – I F
Collector-emitter voltage V CE (V)
Safe Operating Area
Collector-emitter voltage V CE (V)
Reverse Bias SOA
C o l l e c t o r c u r r e n t I C (A )
0 0.6 1.2 1.8
2.4
3.0 3.6
4080120 160
200
0 5 10 15 20 25 30
0.1
10
100 100030
0.3 1 3 300
3 10 30
300 100
1
1000
Pulse width t w (s)
r th (t) – t w
T r a n s i e n t t h e r m a l r e s i s t a n c e r t h (t ) (°C /W )
10 10 10 10 102
10−10−10−10−10101010 10 10
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