SC221资料

元器件交易网
SC221
POUT VS PIN GRAPH
SC221 Pout/Gain vs Pin Freq=850Mhz, Vds=12.5Vdc, Idq=.2A
13.00 3.2 P1dB = 2.3 watts 2.8 2.4 2 1.6 1.2 Efficiency@2.5W = 56% 0.8 0.4 0 0 0.1 0.2 0.3 PIN IN WATTS 0.4 8.00 0.5
850MHz 850 MHz 850MHz
η
VSWR
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 2 0.2 2.00 2.30 9.0 0.3 8.0 MIN 40 0.2 1 5 TYP MAX UNITS TEST CONDITIONS V mA uA V Mho Ohm Amp pF pF pF Ids = 10.00 mA, Vgs = 0V Vds = 12.5 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.02 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 1.60 A Vgs = 20V, Vds = 10V Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 20 Watts Junction to Case Thermal Resistance o 10.00 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 30 V
TM
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 2.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT
2 1.8 1.6 1.4 ID IN AMPS 1.2 1 0.8 0.6 0.4 0.2 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDS IN VOLTS vg=8v 14 vg=10v 16 18 vg=12v 20
ID & GM VS VGS
10.00
S2C Die 1 ID & GM vs VG
0.1 0 4 8 12 16 20 24 28 100 1000
CAPACITANCE VS VOLTAGE
S2C 1 DIE CAPACITANCE
1Байду номын сангаас.00 Pout 11.00
Coss
10
10.00 Gain 9.00
1
Ciss Crss
VDS IN VOLTS
IV CURVE
S2C Die 1 IV CURVE
REVISION 09/11/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@ URL:
POLYFET RF DEVICES
REVISION 09/11/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@ URL:
0.8 A
RF CHARACTERISTICS (
SYMBOL PARAMETER Gps Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 50 TYP
2.0 WATTS OUTPUT )
MAX UNITS TEST CONDITIONS dB % 20:1 Relative Idq = 0.20 Idq = 0.20 Idq = 0.20 A, Vds = 12.5 V, F = A, Vds = 12.5 V, F = A, Vds = 12.5 V, F =
I
Id in amps; Gm in mhos
1.00
0.10
0.01
0
2
4
6
Vg=6v
8 10 Vgs in Volts
12
14
16
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
元器件交易网
polyfet rf devices
SC221
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.