Sensitivity enhanced biomolecule field effect tran
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专利名称：Sensitivity enhanced biomolecule field effect
transistor
发明人：Yoo, Kyu-tae,Lim, Geun-bae,Kim, Joon-
ho,Namkoong, Kak
申请号：EP05002980.0
申请日：20050211
公开号：EP1568993A1
公开日：
20050831
专利内容由知识产权出版社提供
专利附图：
摘要：There is provided a biomolecule eg DNA FET with enhanced sensitivity. The biomolecule FET includes a substrate (21), first and second impurity regions (22a,22b)
formed on both sides of the substrate, and doped with impurities of a polarity opposite to that of the substrate, a gate (23) formed on the substrate and being in contact with the first and second impurity regions, and a probe biomolecule (18) attached to the gate. An annular channel region underneath the gate (23) surrounds the circular drain region (22b), and is in turn surrounded by the source region (22a). The density of the probe biomolecule attached to the surface of the gate is increased, and when detecting the level of hybridization of the probe biomolecule and the target biomolecule, its sensitivity is improved.
申请人：SAMSUNG ELECTRONICS CO., LTD.
地址：416 Maetan-dong, Yeongtong-gu Suwon-si, Gyeonggi-do KR
国籍：KR
代理机构：Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
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