HIGH-POWER PULSED MAGNETRON SPUTTERING
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专利名称：HIGH-POWER PULSED MAGNETRON SPUTTERING
发明人：CHISTYAKOV, Roman
申请号：US2003030427
申请日：20030926
公开号：WO04/031435P1
公开日：
20040415
专利内容由知识产权出版社提供
摘要：Magnetically enhanced sputtering methods and apparatus are described. A magnetically enhanced sputtering source according to the present invention includes an anode and a cathode assembly having a target that is positioned adjacent to the anode. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A magnet is positioned to generate a magnetic field proximate to the weakly-ionized plasma. The magnetic field substantially traps electrons in the weakly-ionized plasma proximate to the sputtering target. A power supply produces an electric field between the anode and the cathode assembly. The electric field generates excited atoms in the weekly ionized plasma and generates secondary electrons from the sputtering target. The secondary electrons ionize the excited atoms, thereby creating a strongly-ionized plasma having ions that impact a surface of the sputtering target to generate sputtering flux.
申请人：CHISTYAKOV, Roman
地址：US,US
国籍：US,US
代理机构：RAUSCHENBACH, Kurt 更多信息请下载全文后查看。