BSM400GB60DN2资料

Type BSM 400 GB 60 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
VCE
600V
IC
475A
Package HALF-BRIDGE 2
Ordering Code C67070-A2120-A67
ICES
VCE = 600 V, VGE = 0 V, Tj = 25 °C VCE = 600 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
0 0 100 200 300 400 500 600 V 800 VCE
Semiconductor Group
6
Apr-25-1997
元器件交易网
BSM 400 GB 60 DN2
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
12
ICpuls/IC
ICsc/IC
8 1.5 6 1.0 4 ° allowed numbers of short circuit: <1000 ° time between short 2 circuit: >1s di/dt = 500A/µs 1500A/µs 2500A/µs
0.5
0.0 0 100 200 300 400 500 600 V 800 VCE
VF
1.9 1.7 2.4 -
V
IF = 400 A, VGE = 0 V, Tj = 25 °C IF = 400 A, VGE = 0 V, Tj = 125 °C
Reverse recovery time
trr
170 -
ns
IF = 400 A, VR = -300 V, VGE = 0 V diF/dt = -2000 A/µs, Tj = 125 °C
Reverse recovery charge
Qrr
15 -
µC
IF = 400 A, VR = -300 V, VGE = 0 V diF/dt = -2000 A/µs, Tj = 125 °C
Semiconductor Group
3
Apr-25-1997
元器件交易网
VGE(th)
4.5 5.5 6.5
V
VGE = VCE, IC = 9 mA
Collector-emitter saturation voltage
VCE(sat)
VGE = 15 V IC = 400 A Tj = 25 °C Tj = 125 °C
Zero gate voltage collector current 2.1 2.2 5 25 2.55 2.65 mA µA 1
元器件交易网
BSM 400 GB 60 DN2
IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate
TC
VCE
Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C
500 A
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 0 K/W 10 -1
IGBT
IC
400 350 300 250 200 150 100 50 0 0
ZthJC
10 -2
D = 0.50 10
-3
0.20 0.10 0.05
10 -4
0.02 single pulse 0.01
20
40
60
80
100
120
°C
160
10 -5 -5 10
10
-4
10
-3
10
-2
10
-1
gfs
100 22 2.5 1.5 -
S nF -
VCE = 20 V, IC = 400 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
ICpuls
950 800
TC = 25 °C TC = 60 °C
Power dissipation per IGBT
Ptot
1400
W + 150 -40 ... + 125 ≤ 0.09 ≤ 0.18 2500 20 11 F 40 / 125 / 56 sec Vac mm K/W °C
TC = 25 °C
10 2
nFVGEFra bibliotek16 14 12 10
C
Ciss 10 1
100 V
300 V
Coss 8 10 0 6 4 2 0 0.0 10 -1 0 Crss
0.4
0.8
1.2
1.6
2.0
2.4
µC
3.2
5
10
15
20
25
30
QGate
V 40 VCE
Reverse biased safe operating area
par.: VCE = 300 V, VGE = ± 15 V, RG = 4.7 Ω
10 4
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, IC = 400 A
10 4
ns t 10 3 tdoff tf tr tdon 10 2 t
ns tdoff 10 3 tf tr tdon
10 2
10 1 0
200
400
600
A
1000
10 1 0
10
IC
Ω
30
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 4.7 Ω
BSM 400 GB 60 DN2
Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C
1500 W 1300
Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Apr-25-1997
元器件交易网
BSM 400 GB 60 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. max. Unit
元器件交易网
BSM 400 GB 60 DN2
Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 400 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
120 Eoff mWs E
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300V, VGE = ± 15 V, IC = 400 A
s 10
0
TC
tp
Semiconductor Group
4
Apr-25-1997
元器件交易网
BSM 400 GB 60 DN2
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 250 µs, Tj = 25 °C
10 4
A
Ptot
1200 1100 1000 900 800 700 600 500 400 300 200 100 0 0
IC
10 3
tp = 60.0µs
100 µs
10 2
1 ms
10 1
10 ms
DC 10 20 40 60 80 100 120 °C 160
0
10
0
10
1
10
2
V 10
3
800
IC = f (VCE)
parameter: tp = 250 µs, Tj = 125 °C
800
A
IC
600
17V 15V 13V 11V 9V 7V
A
IC
600
17V 15V 13V 11V 9V 7V
500
500
400
400
300
300
200
200
100 0 0
100 0 0
1
2
3
V
5
Symbol
Values 600 600
Unit V
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 475 400
TC = 25 °C TC = 60 °C
Pulsed collector current, tp = 1 ms
680 -
VCC = 300 V, VGE = -15 V, IC = 400 A RGoff = 4.7 Ω
Fall time
tf
510 -
VCC = 300 V, VGE = -15 V, IC = 400 A RGoff = 4.7 Ω
Free-Wheel Diode Diode forward voltage
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V
2.5
ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 25 nH
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
td(on)
200 -
ns
VCC = 300 V, VGE = 15 V, IC = 400 A RGon = 4.7 Ω
Rise time
tr
190 -
VCC = 300 V, VGE = 15 V, IC = 400 A RGon = 4.7 Ω
Turn-off delay time
td(off)
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 250 µs, VCE = 20 V
800
A
IC
600
500
400
300
200
100 0 0
2
4
6
8
10
V 14 VGE
Semiconductor Group
5
Apr-25-1997
Tj Tstg RthJC RthJCD Vis
-
Semiconductor Group
1
Apr-25-1997
元器件交易网
BSM 400 GB 60 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit