Contacting scheme for large and small area semicon
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专利名称：Contacting scheme for large and small area
semiconductor light emitting flip chip
devices
发明人：Daniel A. Steigerwald,Jerome C. Bhat,Michael
J. Ludowise
申请号：US10961239
申请日：20041007
公开号：US07095061B2
公开日：
20060822
专利内容由知识产权出版社提供
专利附图：
摘要：A light emitting device includes a layer of first conductivity type, a layer of
second conductivity type, and a light emitting layer disposed between the layer of first conductivity type and the layer of second conductivity type. A via is formed in the layer of second conductivity type, down to the layer of first conductivity type. The vias may be formed by, for example, etching, ion implantation, diffusion, or selective growth of at least one layer of second conductivity type. A first contact electrically contacts the layer of first conductivity type through the via. A second contact electrically contacts the layer of second conductivity type. A ring that surrounds the light emitting layer and is electrically connected to the first contact electrically contacts the layer of first conductivity type.
申请人：Daniel A. Steigerwald,Jerome C. Bhat,Michael J. Ludowise
地址：Cupertino CA US,San Francisco CA US,San Jose CA US
国籍：US,US,US
代理机构：Patent Law Group LLP
代理人：Rachel V. Leiterman
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