VHFD16-16IO1中文资料

M d Mounting torque
(M5)
2-2.5Nm (10-32 UNF)
18-22lb.in.Weight
35
g
Features
q Package with DCB ceramic base plate q Isolation voltage 3600 V~q Planar passivated chips
q Blocking voltage up to 1600 V q Low forward voltage drop
q Leads suitable for PC board soldering q
UL registered E 72873
Applications
q Supply for DC power equipment q
DC motor control
Advantages
q Easy to mount with two screws q Space and weight savings
q
Improved temperature and power cycling
Dimensions in mm (1 mm = 0.0394")
V RRM = 800-1600 V I dAVM = 21 A
Half Controlled
Single Phase Rectifier Bridge
Including Freewheeling Diode and Field Diodes
135
2
6
8
10
Symbol Test Conditions Characteristic Values
I R , I D V R = V RRM ; V D = V DRM T VJ = T VJM £5mA T VJ = 25°C
£0.3mA V T , V F
I T , I F = 45 A; T VJ = 25°C
£
2.55V V T0For power-loss calculations only (T VJ = 125°C) 1.0V r T 40m W V GT V D = 6 V;T VJ = 25°C £ 1.0V T VJ = -40°C £ 1.2V I GT
V D = 6 V;
T VJ = 25°C £65mA T VJ = -40°C £80mA T VJ = 125°C £50mA V GD T VJ = T VJM ;V D = 2/3 V DRM £0.2V I GD T VJ = T VJM ;
V D = 2/3 V DRM £5mA I L
I G = 0.3 A; t G
= 30 m s;T VJ = 25°C £
150mA di G /dt = 0.3 A/m s;
T VJ = -40°C £200mA T VJ = 125°C
£100mA I H T VJ = 25°C; V D = 6 V; R GK = ¥£100mA t gd T VJ = 25°C; V D = 0.5V DRM £2m s I G = 0.3 A; di G /dt = 0.3 A/m s
t q T VJ = 125°C, I T = 15 A, t P = 300 m s, V R = 100 V typ.
150m s Q r di/dt = -10 A/m s, dv/dt = 20 V/m s, V D = 2/3 V DRM 75m C R thJC per thyristor (diode); DC current 2.4K/W per module
0.6K/W R thJH
per thyristor (diode); DC current 3.0K/W per module
0.75
K/W
Symbol Test Conditions Maximum Ratings
I FAV T H = 85°C, per Diode 4A I FAVM per diode 4A I FRMS per diode 6A I FSM
T VJ = 45°C;t = 10 ms (50 Hz), sine 100A V R = 0 V t = 8.3 ms (60 Hz), sine 110A T VJ = T VJM t = 10 ms (50 Hz), sine 85A V R = 0 V
t = 8.3 ms (60 Hz), sine 94A I 2t
T VJ = 45°C t = 10 ms (50 Hz), sine 50A 2s V R = 0 V t = 8.3 ms (60 Hz), sine 50A 2s T VJ = T VJM t = 10 ms (50 Hz), sine 36A 2s V R = 0 V
t = 8.3 ms (60 Hz), sine 37A 2s I R V R = V RRM
T VJ = T VJM 1mA T VJ = 25°C
0.15mA V F I F = 21 A; T VJ = 25°C
1.83V V T0For power-loss calculations only (T VJ = 125°C)0.9V r T 50m W R thJC per diode; DC current 4.4K/W R thJH
per diode; DC current
5.2
K/W
Field Diodes
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.x for resistive load
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 1Gate trigger range
Fig. 2Gate controlled delay time t gd
11010010000.11
10
I G
V G
mA
V 10
100
1000
110
100
1000µs t gd mA I G
750
1020304050
607001020304050607080900.00.51.01.52.02.53.03.5I F A P tot
W Z thJH Fig. 3Fig. 6Fig. 8。