2SD1256中文资料

*h
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 2A IC = 4A, IB = 0.2A IC = 4A, IB = 0.2A VCE = 10V, IC = 0.5A, f = 10MHz IC = 2A, IB1 = 0.2A, IB2 = – 0.2A, VCC = 50V 30 0.5 1.5 0.15 80 45 60 260 0.5 1.5 V V MHz µs µs µs min typ max 10 50 Unit µA µA V
2SD1256
IC — VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=20 30 10 3 1 TC=100˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C –25˚C
VCE(sat) — IC
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
元器件交易网
Power Transistors
Rth(t) — t
103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) (2) 10
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2 6.0±0.3
1.5–0.4
A
2.0
3.0–0.2
A W
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
0 to 0.4
Unit: mm
1.0±0.1
s Features
q q q q
1.5±0.1
1.5max.
1.1max.
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 130 80 7 10 5 40 1.3 150 –55 to +150 Unit V
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3 5.08±0.5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Collector current IC (A)
Cob — VCB
10000 100 IE=0 f=1MHz TC=25˚C 30
ton, tstg, tf — IC
Pulsed tw=1ms Duty cycle=1% IC/IB=10(IB1=–IB2) VCC=50V TC=25˚C
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25˚C ICP IC 10ms 1 0.3 0.1 0.03 0.01 1ms 300ms t=0.5ms
Collector output capacitance Cob (pF)
3000 1000 300 100 30 10 3 1 0.1
1000 300 T =100˚C C 100 30 10 3 1 0.01 0.03 25˚C –25˚C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency fT (MHz)
30
3000
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
元器件交易网
Power Transistors
2SD1256
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB933
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) — IC
100 10000 IC/IB=20
hFE — IC
10000 VCE=2V 3000 1000 300 100 30 10 3 1 0.01 0.03
fT — IC
5.08±0.5
˚C ˚C
1 2 3
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
VCE=10V f=10MHz TC=25˚C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=–25˚C 100˚C 25˚C
Collector power dissipation PC (W)
30
20
10 (2) (3) 0 0 20 40 60 80 100 120 140 160
Collector current IC (A)
40
(1)
1
0 0 1 2 3 4 5 6
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
FE2
Rank classification
R 60 to 120 Q 90 to 180 P 130 to 260
Rank hFE2
4.4±0.514.7±0.5V10.0±0.3V
+0.4
+0
1
元器件交易网
Power Transistors
PC — Ta
50 6 (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) TC=25˚C 5 IB=100mA 70mA 4 50mA 40mA 3 30mA 2 20mA 10mA
Switching time ton,tstg,tf (µs)
Collector current IC (A)
5
10 3 1 0.3 0.1 0.03 0.01
10 3
tstg ton tf
0.3
1
3
10
30
100
0
1
2
3
4
1
3
10
30
100
300
1000
Collector to base voltage VCB (V)
2SD1256
Thermal resistance Rth(t) (˚C/W)
102
1
10–1
10–2 10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3