LN75X中文资料

IF (mA)
IFP (mA) Pulse forward current
1 10 10 2
IFP (A)
100
10 3
10
Allowable forward current
80
Pulse forward current
10 2
60
1
10
40
10 –1
20
1
0 – 25
0
20
40
60
80
100
10 –2 10 –1
10 –1 – 40
0
40
80Βιβλιοθήκη Pulse forward current IFP (mA)
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
λP — Ta
920 IF = 50mA 100
Spectral characteristics
IF = 50mA Ta = 25˚C
(
PO(fCMHz) 10 log =–3 P O (1MHz)
)
1
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Infrared Light Emitting Diodes LN75X
IF — Ta
120 10 2
IFP — Duty cycle
10 4
IFP — VF
tw = 10µs f = 100Hz Ta = 25˚C
*
Symbol PO λP ∆λ VF IR Ct θ fC*
Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V VR = 0V, f = 1MHz
The angle in which radiant intencity is 50%
60
60 50 40
40˚ 50˚ 60˚ 70˚ 80˚ 90˚
860
40
30 20
840
20
820 – 40
0
40
80
120
0 750
800
850
900
950
1000 1050
Ambient temperature Ta (˚C )
Wavelength λ (nm)
2
*
Symbol PD IF IFP
*
Ratings 180 100 1 3 –25 to +85 –30 to+100
Unit mW mA A V ˚C ˚C
1
2 1: Cathode 2: Anode
VR Topr Tstg
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
4.8±0.3 2.4 2.4
2-0.98±0.2 2-0.45±0.15 0.45±0.15
2.54 R1.75
1.2
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Cutoff frequency
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Infrared Light Emitting Diodes
LN75X
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control systems
ø3.5±0.2
4.5±0.3
Not soldered
4.2±0.3 2.3 1.9
Features
High-power output, high-efficiency : PO = 10 mW (typ.) High-speed modulation capability : fC = 12 MHz
12.8 min. 10.0 min.
2.8 1.8 1.0
min 6
typ 10 880 50 1.5 50 25 12
max
Unit mW nm nm
1.8 10
V µA pF deg. MHz
IFP = 50mA + 10mAp-p
Frequency when modulation optical power decreases by 3dB from 1MHz.
10 –1
0
1
2
3
4
5
Ambient temperature Ta (˚C )
Duty cycle (%)
Forward voltage VF (V)
∆PO — IFP
10 2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C (1) 2.2
VF — Ta
10
∆PO — Ta
Directivity characteristics
0˚ 100 10˚ 20˚
Peak emission wavelength λP (nm)
Relative radiant intensity (%)
900
80
80 70
Relative radiant intensity(%)
90
30˚
880
IF = 50mA
Relative radiant power ∆PO
VF (V)
10
1.8
1
Forward voltage
(2)
IF = 100mA 1.4 50mA
Relative radiant power ∆PO
120
1
10 –1
1.0
10 –2
1
10
10 2
10 3
0.6 – 40
0
40
80