HAS500-S中文资料

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SA36CA,TVS瞬变抑制二极管中文资料

POWER: 500 Wa t VOLTAGE RANGE: 5.0- 17 0 VAXIAL LEADED TRANSIENT VOLTAGE SUPPRESSORS DIODESA5.0A(CA) - SA170A(CA)Glass Passivated Die ConstructionUni- and Bi-Directional Versions AvailableExcellentClamping Capability Fast Response TimePlastic Case Material has UL FlammabilityMechanical DataCase: JEDEC DO-15 Low Profile Molded Plastic Terminals: Axial Leads, Solderable per MIL-STD-750, Method 2026Polarity: Cathode Band or Cathode Notch Marking:Unidirectional – Device Code and Cathode Band Bidirectional – Device Code Only Weight: 0.40 grams (approx.)FeaturesMaximum Ratings and Electrical Characteristics@T A =25°C unless otherwise specifiedCharacteristicSymbol Value Unit Peak Pulse Power Dissipation at T A = 25°C (Note 1, 2, 5) Figure 3P PPM 500 MinimumW Peak Forward Surge Current (Note 3)I FSM 70A Peak Pulse Current on 10/1000µS Waveform (Note 1) Figure 1I PPM See Table 1A Steady State Power Dissipation (Note 2, 4)P M(AV) 1.0W Operating and Storage Temperature RangeT j , T STG-65 to +175°CNote: 1. Non-repetitive current pulse, per Figure 1 and derated above T A = 25°C per Figure 4.2. Mounted on 40mm 2 copper pad.3. 8.3ms single half sine-wave duty cycle = 4 pulses per minutes maximum.4. Lead temperature at 75°C = T L .5. Peak pulse power waveform is 10/1000µS.!!!!!!!!!!29.586.073.771.266.362.758.955.350.0 52.849.144.240.636.834.431.926.925.523.321.720.519.217.916.5 15.37.786.676.40 (uA)R RMW RMW@V leakage Reverse CurrentPulse Peak (A)Vc(V)(mA)BR MAX CurrentMax.BR MIN @I Min.Volgtage Breakdown (V)(BI)(Uni)Voltage Stand-Off Reverse Maximum Clamping V T PP(V)V @I Volgtage Breakdown Test (V)V T Volgtage @I PP SA6.0A SA6.0CA 6.0 7.67 10 10.3 49.5 600.0 SA5.0A SA5.0CA 5.0 7.25 10 9.2 55.4 600.0 SA6.5A SA6.5CA 6.5 7.22 8.30 10 11.2 45.5 400.0 SA7.0A SA7.0CA 7.0 8.95 10 12.0 42.5 150.0 SA7.5A SA7.5CA 7.5 8.33 9.58 1.0 12.9 39.5 50.0 SA8.0A SA8.0CA 8.0 8.89 10.23 1.0 13.6 37.5 25.0 SA8.5A SA8.5CA 8.5 9.44 10.82 1.0 14.4 35.4 10.0 SA9.0A SA9.0CA 9.0 10.0 11.5 1.0 15.4 33.1 5.0 SA10A SA10CA 10 11.1 12.8 1.0 17.0 30.0 3.0SA11A SA11CA 11 12.2 14.0 1.0 18.2 28.0 3.0SA12A SA12CA 12 13.3 1.0 19.9 25.6 3.0SA13A SA13CA 13 14.4 1.0 21.5 23.7 3.0SA14A SA14CA 14 15.6 1.0 23.2 22.0 3.0SA15A SA15CA 15 16.7 1.0 24.4 20.9 3.0SA16A SA16CA 16 17.8 1.0 26.0 19.6 3.0SA17A SA17CA 17 18.9 1.0 27.6 18.5 3.0SA18A SA18CA 18 20.0 1.0 29.2 17.5 3.0SA20A SA20CA 20 22.2 1.0 32.4 15.7 3.0SA22A SA22CA 22 24.4 1.0 35.5 14.4 3.0 SA24A SA24CA 24 26.7 1.0 38.9 13.1 3.0 SA26A SA26CA 26 28.9 1.0 42.1 12.1 3.0 SA28A SA28CA 28 31.1 1.0 45.4 11.2 3.0SA30A SA30CA30 33.3 1.0 48.4 10.5 3.0 SA33A SA33CA 33 36.7 1.0 53.3 9.6 3.0 SA36A SA36CA 36 40.0 1.0 58.1 8.8 3.0 SA40A SA40CA 40 44.4 1.0 64.5 7.9 3.0 SA43A SA43CA 43 47.8 1.0 69.4 7.3 3.0 SA45A SA45CA 45 1.0 72.7 7.0 3.0 SA48A SA48CA 48 53.3 1.0 77.4 6.6 3.0 SA51A SA51CA 51 56.7 1.0 82.4 6.2 3.0SA54ASA54CA 54 60.0 1.0 87.1 5.9 3.0 SA58A SA58CA 58 64.4 1.0 93.6 5.4 3.0 SA60A SA60CA 60 66.7 1.0 96.8 5.3 3.0 SA64A SA64CA 64 71.1 78.6 1.0 103 5.0 3.0 SA70A SA70CA 70 77.8 1.0 113 4.5 3.0 SA75A SA75CA 75 83.0 92.1 1.0 121 4.2 3.0 SA78A SA78CA 78 86.0 95.8 1.0 126 4.0 3.0 SA85A SA85CA 85 94.0 104 1.0 137 3.7 3.0 SA100A SA100CA 100 111 123 1.0 162 3.1 3.0 SA110A SA110CA 110 122 135 1.0 177 2.9 3.0 SA120A SA120CA 120 133 147 1.0 193 2.6 3.0 SA130A SA130CA 130 144 159 1.0 209 2.4 3.0 SA150A SA150CA 150 167 185 1.0 243 2.1 3.0 SA160A SA160CA 160 178 197 1.0 259 2.0 3.0SA170A SA170CA 170 189 209 1.0 275 1.9 3.0TYPERating at = 25 °C ambient temperature unless otherwise specified255075100125150175200100755025T ,AMBIENT TEMPERATURE (°C)Fig.4Pulse Derating CurveA P K P U L S E D E R A T I N G (%P K P W R O R C U R R E N T )2550751001251501752000001.0T ,LEAD TEMPERATURE (°C)Fig.5,Steady State Power DeratingL P ,S T E A D Y S T A T E P O W E R D I S S I P A T I O N (W )d 0.11.0T ,PULSE WIDTH (µs)Fig.3Pulse Rating Curvep 0.1101001.010100100010000P ,P E A K P U L S E P O W E R (k W )P 0123I ,P E A K P U L S E C U R R E N T (%)P p pt,TIME (ms)Fig.1Pulse Waveform110100100010100100010,000V ,REVERSE STANDOFF VOLTAGE (V)Fig.2Typical Junction CapacitanceRWM C ,C A P A C I T A N C E (p F )j。

NBB-500-T1;中文规格书,Datasheet资料

Rev A9 DS070327
NBB-500
Pin Function Description
Interface Schematic
1
RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor,
suitable for the frequency of operation, should be used in most applica-
2 of 12 /
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@.
and connect immediately to ground plane.
3
RF OUT
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the DC
200
°C
Operating Temperature
-45 to +85
°C
Storage Temperature
-65 to +150
°C
Exceeding any one or a combination of these limits may cause permanent damage.

AV106-12中文资料

Parameter 1ConditionFrequency Min.Typ.Max.Unit Switching CharacteristicsRise, On (10/90% or 50% CTL to 90% RF) 1.0µS Fall, Off (90/10% RF or 50% CTL to 10% RF)0.3µS Intermodulation Intercept Point (IIP3)3For Two-tone Input Power +0 dBm0.9 GHz10dBmControl Voltage (V C )0.0V SV Supply Voltage (V S )3V Control Current (I C ) 0.2 x V C mA Supply Current (I S )150µAGaAs IC 35 dB Voltage Variable Attenuator Single Positive 3 V Control 0.5–2.5 GHzFeaturess Single Positive +3 V Control Voltage s 35 dB Attenuation Range @ 0.9 GHz s Excellent Linearity PerformanceSOIC-8AV106-120.0490.016 MAX.0.004 (0.10 mm)0.007 (0.17 mm)8˚PIN 1DescriptionThe AV106-12 GaAs IC FET voltage variable attenuator provides 35 dB attenuation range at 900 MHz controlled by a single positive voltage.The VVA has a linear transfer curve of 12 dB/V slope, with input and output VSWR better than 2:1 over all states.Its attenuation range at 1900 MHz is 25 dB.It operates with supply voltage of +3 V and control voltage of 0 V to +3 V in a low cost SOIC-8 package.The RF ports require 25 pF DC blocking capacitors.Electrical Specifications at 25°C (V = 3 V)Operating Characteristics at 25°C (V S = 3 V)1.All measurements made in a 50 Ωsystem, unless otherwise specified.2.Maximum attenuation includes insertion loss.3.For worst case state.Preliminary2.52.0Frequency (GHz)Insertion Loss vs. FrequencyI n s e r t i o n L o s s (d B )0.51.01.5-5.0-4.5-4.0-3.5-3.0-2.5-20.-1.5-1.0-0.50.02.52.03.01.5V C (V)Attenuation vs. Control VoltageA t t e n u a t i o n (dB )0.51.0-40-35-30-25-20-15-10-50 2.502.00Frequency (GHz)Maximum Attenuation vs. FrequencyM a x i m u m A t t e n u a t i o n (d B )0.501.001.50-40-35-30-25-20-15-10-50Typical Performance Data @ 0.9 GHz(Unless Otherwise Specified)V C (V)VSWR vs. Control VoltageV S W R1.01.11.21.31.41.51.61.71.81.92.02.52.03.01.50.51.02.02.53.01.5V C (V)Input IP3 vs. Control VoltageI I P 3 (d B m )0.51.051015202530 2.0 2.5 3.01.5V C (V)Attenuation vs. Control VoltageOver TemperatureI n s e r t i o n L o s s (d B )0.5 1.0-5-4-3-2-1012345J 2CharacteristicValue RF Input Power 50 mW > 500 MHzSupply Voltage +7 V Control Voltage +3.3 V Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°CΘJC25°C/WAbsolute Maximum RatingsPin OutDC blocking capacitors (C BL ) supplied externally.C BL = 25 pF for operation >500 MHz.Note:Exceeding these parameters may cause irreversible damage.。

KST2222A中文资料

KST2222A中⽂资料KST2222ANPN Epitaxial Silicon TransistorAbsolute Maximum Ratings T a =25°C unless otherwise notedElectrical Characteristics T a =25°C unless otherwise noted* Pulse Test: PW ≤300µs, Duty Cycle ≤2%Symbol ParameterValue Units V CBO Collector-Base Voltage 75V V CEO Collector-Emitter Voltage 40V V EBO Emitter-Base Voltage 6V I C Collector Current600mA P C Collector Power Dissipation 350mW T STGStorage Temperature150°CSymbol ParameterTest ConditionMin.Max.Units BV CBO Collector-Base Breakdown Voltage I C =10µA, I E =075V BV CEO Collector-Emitter Breakdown Voltage I C =10mA, I B =040V BV EBO Emitter-Base Breakdown Voltage I E =10µA, I C =06V I CBO Collector Cut-off Current V CB =60V, I E =00.01µAh FE* DC Current GainV CE =10V, I C =0.1mA V CE =10V, I C =1mA V CE =10V, I C =10mA V CE =10V, I C =150mA V CE =10V, I C =500mA 35507510040300V CE (sat)* Collector-Emitter Saturation Voltage I C =150mA, I B =15mA I C =500mA, I B =50mA 0.31.0V V V BE (sat)* Base-Emitter Saturation Voltage I C =150mA, I B =15mA I C =500mA, I B =50mA0.6 1.22.0V V f T Current Gain Bandwidth Product I C =20mA, V CE =20V, f=100MHz 300MHz C ob Output Capacitance V CB =10V, I E =0, f=1MHz 8pF NF Noise Figure I C =100µA, V CE =10V R S =1K ?, f=1MHz 4dB t ONTurn On TimeV CC =30V, I C =150mA V BE =0.5V, I B1=15mA35nst OFFTurn Off TimeV CC =30V, I C =150mA I B1=I B2=15mA285ns1. Base2. Emitter3. CollectorKST2222AGeneral Purpose Transistor1PMarkingSOT-23123KST2222ATRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBEDHEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT?FACT Quiet series?FAST ?FASTr?FRFET?GlobalOptoisolator?GTO?HiSeC?I 2C?ImpliedDisconnect?ISOPLANAR?LittleFET?MicroFET?MicroPak?MICROWIRE?MSX?MSXPro?OCX?OCXPro? OPTOLOGIC ?OPTOPLANAR?PACMAN?POP?Power247?PowerTrench ?QFET?QS?QT Optoelectronics?Quiet Series?RapidConfigure?RapidConnect?SILENT SWITCHER ?SMART START?SPM?Stealth?SuperSOT?-3SuperSOT?-6SuperSOT?-8SyncFET?TinyLogic?TruTranslation?UHC?UltraFET ?VCX?ACEx?ActiveArray?Bottomless?CoolFET?CROSSVOLT ?DOME?EcoSPARK?E 2CMOS?EnSigna?Across the board. Around the world.?The Power Franchise?Programmable Active Droop?。

HA-5340中文资料

-
-
3.0
mV
Full
-
-
30
µV/oC
25
-
±70
-
nA
Full
-
-
±350
nA
25
-
±50
-
nA
Full
-
-
±350
nA
Full
-10
-
+10
V
25
-
83
-
dB
Full
72
-
-
dB
TRANSFER CHARACTERISTICS
Gain
DC
25
110
140
-
dB
Gain Bandwidth Product
Ordering Information
PART NUMBER HA3-5340-5 HA9P5340-5
TEMP. RANGE (oC)
PACKAGE
0 to 75 14 Ld PDIP
0 to 75 16 Ld SOIC
Functional Diagram
PKG. NO.
E14.3
M16.3
ADJUST OFFSET
TRANSIENT RESPONSE Rise Time
CH External = 0pF CH External = 100pF CH External = 1000pF
200mV Step
Full
-
10
-
MHz
Full
-
9.6
-
MHz
Full
-
6.7
-
MHz
25

IRFS450中文资料

(Note 4)(Note 4, 5)(Note 4, 5) (Note 4)Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 19.3mH, I AS = 9.6A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 14A, di/dt ≤ 300A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%5. Essentially independent of operating temperatureBV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µA500----V ∆BV DSS / ∆T J Breakdown Voltage Temperature CoefficientI D = 250 µA, Referenced to 25°C --0.55--V/°C I DSS Zero Gate Voltage Drain Current V DS = 500 V, V GS = 0 V ----10µA V DS = 400 V, T C = 125°C ----100µA I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, V DS = 0 V ----100nA I GSSRGate-Body Leakage Current, ReverseV GS = -30 V, V DS = 0 V-----100nAOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 2.0-- 4.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 4.8 A --0.310.39Ωg FSForward TransconductanceV DS = 40 V, I D = 4.8 A--11.5--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--29003800pF C oss Output Capacitance--260340pF C rssReverse Transfer Capacitance--6080pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 250 V, I D = 14 A,R G = 25 Ω--45100ns t r Turn-On Rise Time --130270ns t d(off)Turn-Off Delay Time --260530ns t f Turn-Off Fall Time --125260ns Q g Total Gate Charge V DS = 400 V, I D = 14 A,V GS = 10 V--87113nC Q gs Gate-Source Charge --13--nC Q gdGate-Drain Charge--39--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----9.6A I SM Maximum Pulsed Drain-Source Diode Forward Current----38.4A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 9.6 A ---- 1.4V t rr Reverse Recovery Time V GS = 0 V, I S = 14 A,dI F / dt = 100 A/µs--495--ns Q rrReverse Recovery Charge--7.66--µCDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.STAR*POWER is used under licenseACEx™Bottomless™CoolFET™CROSSVOLT ™DenseTrench™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER ®SMART START™STAR*POWER™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TruTranslation™TinyLogic™UHC™UltraFET ®VCX™。

NSPB500AS中文资料

No. STSE-CB7081A<Cat.No.070601>SPECIFICATIONS FOR NICHIA BLUE LEDMODEL : NSPB500ASNICHIA CORPORATION1.SPECIFICATIONS(1) Absolute Maximum Ratings (Ta=25°C)Item Symbol Absolute Maximum Rating UnitForward Current I F 35 mA Pulse Forward Current I FP 110 mA Reverse Voltage V R 5 V Power Dissipation P D 123 mW Operating Temperature T opr -30 ~ + 85 °C Storage Temperature T stg -40 ~ +100 °C Soldering Temperature T sld 265°C for 10sec.I FP Conditions : Pulse Width 10msec. and Duty 1/10 (2) Initial Electrical/Optical Characteristics (Ta=25°C)Item Symbol Condition Typ. Max. UnitForward Voltage V F I F =20[mA](3.2) 3.5 V Reverse Current I R V R = 5[V] - 50 µA Luminous Intensity Iv I F =20[mA](11000)- mcdx - I F =20[mA]0.133 - -Chromaticity Coordinatey - I F =20[mA]0.075 - -½ Please refer to CIE 1931 chromaticity diagram.(3) Ranking(Ta=25°C)Item SymbolCondition Min. Max. Unit Rank W IvI F =20[mA]11500 16500 mcd Rank V IvI F =20[mA]8240 11500 mcd Luminous Intensity Rank U IvI F =20[mA]5760 8240 mcd½ Luminous Intensity Measurement allowance is ± 10%.Color Rank (I F =20mA,Ta=25°C)Rank W x 0.11 0.11 0.15 0.15 y 0.04 0.10 0.10 0.04½ Color Coordinates Measurement allowance is ± 0.01.½ One delivery will include up to one color rank and three luminous intensity ranks of the products. The quantity-ratio of the ranks is decided by Nichia.2.INITIAL OPTICAL/ELECTRICAL CHARACTERISTICSPlease refer to figure’s page. <= <=½3.OUTLINE DIMENSIONS AND MATERIALSPlease refer to figure’s page.Material as follows ; Resin(Mold): Epoxy ResinLeadframe : Ag plating Copper Alloy4.PACKAGING· The LEDs are packed in cardboard boxes after packaging in anti-electrostatic bags.Please refer to figure’s page.The label on the minimum packing unit shows ; Part Number, Lot Number, Ranking, Quantity· In order to protect the LEDs from mechanical shock, we pack them in cardboard boxes for transportation. · The LEDs may be damaged if the boxes are dropped or receive a strong impact against them,so precautions must be taken to prevent any damage.· The boxes are not water resistant and therefore must be kept away from water and moisture.· When the LEDs are transported, we recommend that you use the same packing method as Nichia.5.LOT NUMBERThe first six digits number shows lot number.The lot number is composed of the following characters;- U- Year ( 6 for 2006, 7 for 2007 )- Month ( 1 for Jan., 9 for Sep., A for Oct., B for Nov. )- Nichia's Product NumberU - Ranking by Color Coordinates- Ranking by Luminous Intensity6.RELIABILITY(1) TEST ITEMS AND RESULTSTest Item StandardTest Method Test Conditions NoteNumber ofDamagedResistance to Soldering Heat JEITA ED-4701300 302Tsld=260 ± 5°C, 10sec.3mm from the base of the epoxy bulb1 time 0/50Solderability JEITA ED-4701300 303 Tsld=235 ± 5°C, 5sec.(using flux)1 timeover 95%0/50Temperature Cycle JEITA ED-4701100 105-40°C ~ 25°C ~ 100°C ~ 25°C30min.5min.30min.5min.100 cycles0/50Moisture Resistance Cyclic JEITA ED-4701200 203 25°C ~ 65°C ~ -10°C90%RH 24hrs./1cycle10 cycles 0/50Terminal Strength (bending test) JEITA ED-4701400 401Load 5N (0.5kgf)0° ~ 90° ~ 0° bend 2 timesNo noticeabledamage0/50Terminal Strength (pull test) JEITA ED-4701400 401Load 10N (1kgf)10 ± 1 sec.No noticeabledamage0/50High Temperature Storage JEITA ED-4701200 201Ta=100°C 1000hrs. 0/50Temperature Humidity Storage JEITA ED-4701100 103Ta=60°C, RH=90% 1000hrs. 0/50Low Temperature Storage JEITA ED-4701200 202Ta=-40°C 1000hrs. 0/50Steady State Operating Life Ta=25°C, I F=35mA 1000hrs.0/50Steady State Operating Life of High Humidity Heat 60°C, RH=90%, I F=20mA 500hrs.0/50Steady State Operating Life of Low Temperature Ta=-30°C, I F=20mA 1000hrs.0/50(2) CRITERIA FOR JUDGING DAMAGECriteria for JudgementItem Symbol Test Conditions Min. Max. Forward Voltage V F I F=20mA - U.S.L.*)¯ 1.1 Reverse Current I R V R=5V -U.S.L.*)¯ 2.0 Luminous Intensity I V I F=20mA L.S.L.**)¯ 0.7 - *) U.S.L.:Upper Standard Level **) L.S.L.:Lower Standard Level7.CAUTIONS(1) Lead Forming· When forming leads, the leads should be bent at a point at least 3mm from the base of the epoxy bulb.Do not use the base of the leadframe as a fulcrum during lead forming.· Lead forming should be done before soldering.· Do not apply any bending stress to the base of the lead. The stress to the base may damage the LED’s characteristics or it may break the LEDs.· When mounting the LEDs onto a printed circuit board, the holes on the circuit board should beexactly aligned with the leads of the LEDs. If the LEDs are mounted with stress at the leads,it causes deterioration of the epoxy resin and this will degrade the LEDs.(2) Storage· The LEDs should be stored at 30°C or less and 70%RH or less after being shipped from Nichia and the storage life limits are 3 months. If the LEDs are stored for 3 months or more, they can bestored for a year in a sealed container with a nitrogen atmosphere and moisture absorbent material. · Nichia LED leadframes are silver plated copper alloy. The silver surface may be affected byenvironments which contain corrosive substances. Please avoid conditions which may cause the LED to corrode, tarnish or discolor. This corrosion or discoloration may cause difficulty during soldering operations. It is recommended that the LEDs be used as soon as possible.· Please avoid rapid transitions in ambient temperature, especially, in high humidity environments where condensation can occur.(3) Static Electricity· Static electricity or surge voltage damages the LEDs.It is recommended that a wrist band or an anti-electrostatic glove be used when handling the LEDs. · All devices, equipment and machinery must be properly grounded. It is recommended that precautions be taken against surge voltage to the equipment that mounts the LEDs.· When inspecting the final products in which LEDs were assembled, it is recommended to checkwhether the assembled LEDs are damaged by static electricity or not. It is easy to findstatic-damaged LEDs by a light-on test or a VF test at a lower current (below 1mA is recommended). · Damaged LEDs will show some unusual characteristics such as the leak current remarkablyincreases, the forward voltage becomes lower, or the LEDs do not light at the low current.Criteria : (V F> 2.0V at I F=0.5mA)(4) Soldering Conditions· Nichia LED leadframes are silver plated copper alloy. This substance has a lowthermal coefficient (easily conducts heat). Careful attention should be paid during soldering. · Solder the LED no closer than 3mm from the base of the epoxy bulb. Soldering beyond the base of the tie bar is recommended.· Recommended soldering conditionsDip Soldering Hand SolderingPre-HeatPre-Heat Time Solder BathTemperature Dipping Time Dipping Position 120°C Max.60 seconds Max.260°C Max.10 seconds Max.No lower than 3 mm from thebase of the epoxy bulb.TemperatureSoldering TimePosition350°C Max.3 seconds Max.No closer than 3 mm from thebase of the epoxy bulb.· Although the recommended soldering conditions are specified in the above table, dip or handsoldering at the lowest possible temperature is desirable for the LEDs.· A rapid-rate process is not recommended for cooling the LEDs down from the peak temperature.· Dip soldering should not be done more than one time.· Hand soldering should not be done more than one time.· Do not apply any stress to the lead particularly when heated.· The LEDs must not be repositioned after soldering.· After soldering the LEDs, the epoxy bulb should be protected from mechanical shock or vibration until the LEDs return to room temperature.· Direct soldering onto a PC board should be avoided. Mechanical stress to the resin may be caused from warping of the PC board or from the clinching and cutting of the leadframes. When it isabsolutely necessary, the LEDs may be mounted in this fashion but the User will assume responsibility for any problems. Direct soldering should only be done after testing has confirmed that no damage, such as wire bond failure or resin deterioration, will occur. Nichia’s LEDs should not be soldered directly to double sided PC boards because the heat will deteriorate the epoxy resin.· When it is necessary to clamp the LEDs to prevent soldering failure, it is important to minimizethe mechanical stress on the LEDs.· Cut the LED leadframes at room temperature. Cutting the leadframes at high temperatures may cause failure of the LEDs.(5) Heat Generation· Thermal design of the end product is of paramount importance. Please consider the heat generation of the LED when making the system design. The coefficient of temperature increase per input electric power is affected by the thermal resistance of the circuit board and density of LEDplacement on the board, as well as other components. It is necessary to avoid intense heat generation and operate within the maximum ratings given in this specification.· The operating current should be decided after considering the ambient maximum temperature of LEDs.(6) Cleaning· It is recommended that isopropyl alcohol be used as a solvent for cleaning the LEDs. When using other solvents, it should be confirmed beforehand whether the solvents will dissolve the resin or not.Freon solvents should not be used to clean the LEDs because of worldwide regulations.· Do not clean the LEDs by the ultrasonic. When it is absolutely necessary, the influence of ultrasonic cleaning on the LEDs depends on factors such as ultrasonic power and the assembled condition.(7) Safety Guideline for Human Eyes· In 1993, the International Electric Committee (IEC) issued a standard concerning laser product safety (IEC 825-1). Since then, this standard has been applied for diffused light sources (LEDs) as well as lasers. In 1998 IEC 60825-1 Edition 1.1 evaluated the magnitude of the light source.In 2001 IEC 60825-1 Amendment 2 converted the laser class into 7 classes for end products.Components are excluded from this system. Products which contain visible LEDs are now classified as class 1. Products containing UV LEDs are class 1M. Products containing LEDs can be classified as class 2 in cases where viewing angles are narrow, optical manipulation intensifies the light, and/or the energy emitted is high. For these systems it is recommended to avoid long term exposure.It is also recommended to follow the IEC regulations regarding safety and labeling of products.(8) Others· NSPB500AS complies with RoHS Directive.· Care must be taken to ensure that the reverse voltage will not exceed the absolute maximum rating when using the LEDs with matrix drive.· Flashing lights have been known to cause discomfort in people; you can prevent this by takingprecautions during use. Also, people should be cautious when using equipment that has had LEDsincorporated into it.· The LEDs described in this brochure are intended to be used for ordinary electronic equipment (such as office equipment, communications equipment, measurement instruments and household appliances).Consult Nichia’s sales staff in advance for information on the applications in which exceptional quality and reliability are required, particularly when the failure or malfunction of the LEDs may directly jeopardize life or health (such as for airplanes, aerospace, submersible repeaters, nuclear reactorcontrol systems, automobiles, traffic control equipment, life support systems and safety devices).· User shall not reverse engineer by disassembling or analysis of the LEDs without having prior written consent from Nichia. When defective LEDs are found, the User shall inform Nichia directly before disassembling or analysis.· The formal specifications must be exchanged and signed by both parties before large volume purchase begins. · The appearance and specifications of the product may be modified for improvement without notice.Nichia STSE-CB7081A<Cat.No.070601>½Color Coordinates Measurement allowance is ± 0.01.NichiaSTSE-CB7081ANichiaSTSE-CB7081ANichia STSE-CB7081ANichia STSE-CB7081A -11-Nichia STSE-CB7081A -12-Nichia STSE-CB7081A -13-Nichia STSE-CB7081A -14-。

74HC595D中文资料_数据手册_参数

74HC595D中⽂资料_数据⼿册_参数74HC595; 74HCT5958-bit serial-in, serial or parallel-out shift register with outputlatches; 3-stateRev. 6 — 12 December 2011Product data sheet1. General descriptionThe 74HC595; 74HCT595 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No.7A.The 74HC595; 74HCT595 are 8-stage serial shift registers with a storage register and3-state outputs. The registers have separate clocks.Data is shifted on the positive-going transitions of the shift register clock input (SHCP). The data in each register is transferred to the storage register on a positive-going transition of the storage register clock input (STCP). If both clocks are connected together, the shift register will always be one clock pulse ahead of the storage register.The shift register has a serial input (DS) and a serial standard output (Q7S) for cascading. It is also provided with asynchronous reset (active LOW) for all 8 shift register stages. The storage register has 8 parallel 3-state bus driver outputs. Data in the storage register appears at the output whenever the output enable input (OE) is LOW.2. Features and benefits8-bit serial input8-bit serial or parallel outputStorage register with 3-state outputsShift register with direct clear100MHz (typical) shift out frequencyESD protection:◆HBM JESD22-A114F exceeds2000V◆MM JESD22-A115-A exceeds200VMultiple package optionsSpecified from -40C to+85C and from -40C to+125C3. ApplicationsSerial-to-parallel data conversionRemote control holding register3-state4. Ordering information5. Functional diagramTable 1.Ordering informationType numberPackageTemperature rangeName DescriptionVersion 74HC595N -40?C to +125?CDIP16plastic dual in-line package; 16leads (300mil)SOT38-474HCT595N 74HC595D -40?C to +125?CSO16plastic small outline package; 16leads;body width 3.9mmSOT109-174HCT595D 74HC595DB -40?C to +125?CSSOP16plastic shrink small outline package; 16leads; body width 5.3mmSOT338-174HCT595DB 74HC595PW -40?C to +125?CTSSOP16plastic thin shrink small outline package; 16leads; body width 4.4mmSOT403-174HCT595PW 74HC595BQ -40?C to +125?CDHVQFN16plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; 16terminals; body 2.5 ? 3.5 ? 0.85 mmSOT763-174HCT595BQ3-state3-state 6. Pinning information3-state6.2Pin descriptionTable 2.Pin description Symbol Pin DescriptionQ11parallel data output 1Q22parallel data output 2Q33parallel data output 3Q44parallel data output 4Q55parallel data output 5Q66parallel data output 6Q77parallel data output 7 GND8ground (0 V)Q7S9serial data outputMR10master reset (active LOW)OE13output enable input (active LOW)DS14serial data inputQ015parallel data output 0V CC16supply voltage7. Functional descriptionTable 3.Function table[1]Control Input Output FunctionSHCP STCP OE MR DS Q7S QnX X L L X L NC a LOW-level on MR only affects the shift registersX↑L L X L L empty shift register loaded into storage registerX X H L X L Z shift register clear; parallel outputs in high-impedance OFF-state↑X L H H Q6S NC logic HIGH-level shifted into shift register stage 0. Contents of all shift register stages shifted through, e.g. previous state of stage 6(internal Q6S) appears on the serial output (Q7S).X↑L H X NC QnS contents of shift register stages (internal QnS) are transferred to the storage register and parallel output stages↑↑L H X Q6S QnS contents of shift register shifted through; previous contents of the shift register is transferred to the storage register and the paralleloutput stages[1]H=HIGH voltage state;L=LOW voltage state;↑=LOW-to-HIGH transition;X=don’t care;NC=no change;Z=high-impedance OFF-state.3-state8. Limiting valuesTable 4.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max UnitV CC supply voltage-0.5+7VI IK input clamping current V I < -0.5V or V I>V CC+0.5 V-±20mAI OK output clamping current V O<-0.5V or V O > V CC + 0.5 V-±20mAI O output current V O=-0.5V to (V CC+0.5V)pin Q7S-±25mApins Qn-±35mAI CC supply current-70mAI GND ground current-70-mAT stg storage temperature-65+150?CP tot total power dissipationDIP16 package[1]-750mWSO16 package[2]-500mWSSOP16 package[3]-500mWTSSOP16 package[3]-500mWDHVQFN16 package[4]-500mW[1]For DIP16 package: P tot derates linearly with 12mW/K above 70 ?C.[2]For SO16 package: P tot derates linearly with 8mW/K above 70 ?C.[3]For SSOP16 and TSSOP16 packages: P tot derates linearly with 5.5mW/K above 60 ?C.9. Recommended operating conditions10. Static characteristicsTable 5.Recommended operating conditionsSymbol ParameterConditions74HC59574HCT595UnitMinTyp Max Min Typ Max V CC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5V V I input voltage 0-V CC 0-V CC V V O output voltage 0-V CC 0-V CC V ?t/?Vinput transition rise and fall rateV CC = 2.0 V --625---ns/V V CC = 4.5 V - 1.67139- 1.67139ns/V V CC = 6.0 V--83---ns/V T ambambient temperature-40+25+125-40+25+125C Table 6.Static characteristicsAt recommended operating conditions; voltages are referenced to GND (ground =0V).Symbol ParameterConditions-40?C to +85?C -40?C to +125?C UnitMinTypMaxMinMax74HC595V IHHIGH-level input voltageV CC =2.0V 1.5 1.2- 1.5-V V CC =4.5V 3.15 2.4- 3.15-V V CC =6.0VV CC =2.0V -0.80.5-0.5V V CC =4.5V - 2.1 1.35- 1.35V V CC =6.0V- 2.81.8- 1.8VV OHHIGH-level output voltageV I =V IH or V IL all outputsI O =-20µA; V CC =2.0V 1.9 2.0- 1.9-V I O =-20µA; V CC =4.5V 4.4 4.5- 4.4-V I O =-20µA; V CC =6.0V 5.96.0- 5.9-VQ7S outputI O =-4mA; V CC =4.5V 3.84 4.32- 3.7-V I O =-5.2mA; V CC =6.0V 5.345.81- 5.2-VQn bus driver outputs I O =-6mA; V CC =4.5V 3.84 4.32- 3.7-V I O =-7.8mA; V CC =6.0V5.345.81- 5.2-V3-stateV OL LOW-leveloutput voltage V I=V IH or V ILall outputsI O=20µA; V CC=2.0V-00.1-0.1V I O=20µA; V CC=4.5V-00.1-0.1V I O=20µA; V CC=6.0V-00.1-0.1V Q7S output I O=4mA;V CC=4.5V-0.150.33-0.4V I O=5.2mA;V CC=6.0V-0.160.33-0.4V Qn bus driver outputsI O=6mA;V CC=4.5V-0.150.33-0.4V I O=7.8mA;V CC=6.0V-0.160.33-0.4VI I input leakagecurrentV I=V CC or GND; V CC=6.0V--±1.0-±1.0µAI OZ OFF-state--80-160µAC I inputcapacitance- 3.5---pF 74HCT595V IH HIGH-levelinput voltageV CC=4.5V to 5.5V 2.0 1.6- 2.0-VV IL LOW-levelinput voltageV CC=4.5V to 5.5V- 1.20.8-0.8VV OH HIGH-leveloutput voltage V I=V IH or V IL; V CC=4.5Vall outputsI O=-20µA 4.4 4.5- 4.4-V Q7S outputI O=-4mA 3.84 4.32- 3.7-V Qn bus driver outputsI O=-6mA 3.7 4.32- 3.7-VV OL LOW-leveloutput voltage V I=V IH or V IL; V CC=4.5Vall outputsI O=20µA-00.1-0.1V Q7S outputI O=4.0mA-0.150.33-0.4V Qn bus driver outputsI O=6.0mA-0.160.33-0.4VI I input leakagecurrent V I=V CC or GND; V CC=5.5V--±1.0-±1.0µATable 6.Static characteristics …continuedAt recommended operating conditions; voltages are referenced to GND (ground=0V). Symbol Parameter Conditions-40?C to +85?C-40?C to +125?C UnitMin Typ Max Min Max3-stateI OZ OFF-state--80-160µAI CC additionalsupply current per input pin; I O=0A; V I=V CC-2.1V; other inputs at V CC or GND;V CC=4.5V to5.5Vpins MR, SHCP, STCP, OE-150675-735µA pin DS-25113-123µAC I inputcapacitance - 3.5---pFTable 6.Static characteristics …continuedAt recommended operating conditions; voltages are referenced to GND (ground=0V).Symbol Parameter Conditions-40?C to +85?C-40?C to +125?C UnitMin Typ Max Min Max3-state 11. Dynamic characteristicsTable 7.Dynamic characteristicsVoltages are referenced to GND (ground = 0 V); for test circuit see Figure14.Symbol Parameter Conditions25 ?C-40?C to+85 ?C-40?C to+125 ?C UnitMin Typ[1]Max Min Max Min Max74HC595t pd propagationdelay SHCP to Q7S; see Figure9[2]V CC = 2 V-52160-200-240ns V CC = 4.5 V-1932-40-48ns V CC = 6 V-1527-34-41ns STCP to Qn; see Figure10[2] V CC = 2 V-55175-220-265ns V CC = 4.5 V-2035-44-53ns V CC = 6 V-1630-37-45ns MR to Q7S; see Figure12[3] V CC = 2 V-47175-220-265ns V CC = 4.5 V-1735-44-53ns V CC = 6 V-1430-37-45nst en enable time OE to Qn; see Figure13[4]V CC = 2 V-47150-190-225nsV CC = 4.5 V-1730-38-45nsV CC = 6 V-1426-33-38ns t dis disable time OE to Qn; see Figure13[5]V CC = 2 V-41150-190-225nsV CC = 4.5 V-1530-38-45nsV CC = 6 V-1227-33-38ns t W pulse width SHCP HIGH or LOW;V CC = 4.5 V156-19-22-nsV CC = 6 V135-16-19-nsSTCP HIGH or LOW;see Figure10V CC = 2 V7511-95-110-nsV CC = 4.5 V154-19-22-nsV CC = 6 V133-16-19-nsMR LOW; see Figure12V CC = 2 V7517-95-110-nsV CC = 4.5 V156-19-22-nsV CC = 6 V135-16-19-ns3-statet suset-up timeDS to SHCP; see Figure 10V CC = 2 V 5011-65-75-ns V CC = 4.5 V 104-13-15-ns V CC = 6 V 9 3-11-13-nsSHCP to STCP; see Figure 11V CC = 2 V 7522-95-110-ns V CC = 4.5 V 158-19-22-ns V CC = 6 V 137-16-19-ns t hhold timeDS to SHCP; see Figure 11V CC = 2 V 3-6-3-3-ns V CC = 4.5 V 3-2-3-3-ns V CC = 6 V3-2-3-3-ns t recrecovery timeMR to SHCP; see Figure 12V CC = 2 V 50-19-65-75-ns V CC = 4.5 V 10-7-13-15-ns V CC = 6 V 9-6-11-13f maxmaximum frequencySHCP or STCP; see Figure 9 and 10V CC = 2 V 930- 4.8-4-MHz V CC = 4.5 V 3091-24-20-MHz V CC = 6 V35108-28-24-MHz C PDpower dissipation capacitancef i = 1 MHz; V I =GND to V CC [6][7]-115-----pF74HCT595; V CC = 4.5 V to 5.5 V t pdpropagation delay SHCP to Q7S; see Figure 9[2]-2542-53-63ns STCP to Qn; see Figure 10[2]-2440-50-60ns MR to Q7S; see Figure 12[3]-2340-50-60ns t en enable time OE to Qn; see Figure 13[4]-2135-44-53ns t dis disable time OE to Qn; see Figure 13[5] -1830-38-45ns t Wpulse widthSHCP HIGH or LOW;see Figure 9166-20-24-ns STCP HIGH or LOW; see Figure 10165-20-24-ns MR LOW; see Figure 12208-25-30-ns t suset-up timeDS to SHCP; see Figure 10165-20-24-ns SHCP to STCP; see Figure 11168-20-24-ns t hhold timeDS to SHCP; see Figure 113-2-3-nsTable 7.Dynamic characteristics …continuedVoltages are referenced to GND (ground = 0 V); for test circuit see Figure 14.Symbol Parameter Conditions25 ?C -40?C to +85 ?C -40?C to +125 ?C Unit Min Typ [1]Max Min Max Min Max3-state[1]Typical values are measured at nominal supply voltage.[2]t pd is the same as t PHL and t PLH .[3]t pd is the same as t PHL only.[4]t en is the same as t PZL and t PZH .[5]t dis is the same as t PLZ and t PHZ .[6]C PD is used to determine the dynamic power dissipation (P D in µW).P D =C PD ?V CC 2?f i +∑(C L ?V CC 2?f o )where:f i=input frequency in MHz;f o =output frequency in MHz;∑(C L ?V CC 2?f o )=sum of outputs;C L =output load capacitance in pF;V CC =supply voltage in V.[7]All 9outputs switching.12. Waveformst rec recovery time MR to SHCP; see Figure 1210-7-13-15-ns f max maximum frequencySHCP and STCP; see Figure 9 and 103052-24-20-MHz C PDpower dissipation capacitancef i = 1 MHz; V I =GND to V CC [6] [7]-130-----pFTable 7.Dynamic characteristics …continuedVoltages are referenced to GND (ground = 0 V); for test circuit see Figure 14.Symbol Parameter Conditions25 ?C -40?C to +85 ?C -40?C to +125 ?C Unit Min Typ [1]Max Min Max Min Max3-stateTable 8.Measurement points Type Input OutputV M V M74HC5950.5V CC0.5V CC 74HCT595 1.3V 1.3V3-stateTable 9.Test data74HC595V CC6ns50 pF1kΩopen GND V CC74HCT5953V6ns50 pF1kΩopen GND V CC3-state 13. Package outlineDIP16: plastic dual in-line package; 16 leads (300 mil)SOT38-4Fig 15.Package outline SOT38-4 (DIP16)3-state SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1Fig 16.Package outline SOT109-1 (SO16)3-state SSOP16: plastic shrink small outline package; 16 leads; body width 5.3 mm SOT338-1Fig 17.Package outline SOT338-1 (SSOP16)3-state TSSOP16: plastic thin shrink small outline package; 16 leads; body width 4.4 mm SOT403-1Fig 18.Package outline SOT403-1 (TSSOP16)。

HD74ALVC1G04VS中文资料

Item Propagation delay time
Rev.0, Jun. 2001, page 6 of 10
HD74ALVC1G04
Operating Characteristics
(Ta = 25°C)
Item Power dissipation capacitance Symbol CPD VCC (V) 1.5 1.8 2.5 3.3 Min Typ 9.5 9.5 10.0 10.5 Max Unit pF Test conditions f = 10 MHz
Rev.0, Jun. 2001, page 4 of 10
HD74ALVC1G04
Electrical Characteristics
(Ta = −40 to 85°C)
Item Input voltage Symbol VIH VCC (V) 1.2 1.4 to 1.6 1.65 to 1.95 2.3 to 2.7 3.0 to 3.6 VIL 1.2 1.4 to 1.6 1.65 to 1.95 2.3 to 2.7 3.0 to 3.6 Output voltage VOH Min to Max 1.2 1.4 1.65 2.3 3.0 VOL Min to Max 1.2 1.4 1.65 2.3 3.0 Input current Quiescent supply current Output leakage current Input capacitance IIN ICC IOFF CIN 3.6 3.6 0 3.3
•
VCC = 1.8±0.15 V
Symbol tPLH tPHL Min 1.5 Typ Max 5.0 Unit ns Test conditions CL = 30 pF FROM (Input) A TO (Output) Y

森佩理特中文样本

350 297 280 245 192 157 140
415 400 350 330 275 250 215 165 125 90 80
400 350 330 275 250 215 165
400 375 350 300 275 235 185
450 420 385 345 290 280 200
425 380 350 280 230
2

⡣ⷆ GENERAL INFORMATION
㮤㫥㑫⤸
㗄㱫㲂ⷃ㣡㱵⧧⧩⒱㱵⫑☨㮤㫥㮤㝛(HL,HLP,HLPD,HVLP) 㙦⫑㑧⭗ (HFAE,HFAS,HFB)⧧㙦㮼✠╢㑚⭗ (HFC)ᱨ㮾⭆㺔㣡㱵⫑⧧ⷃ㣡㱵⫑☨㑱⪄⭗ᮣ⶙㗄㱫㲂㾎▙㫥⻲㢜 50bar [725psi]⧧㾎⡽㢴⛪㢜80°C[175 °F]☨㫥㚭ⶥ㋺ᮣ ⏥㗄㱫㲂齒⪇㜲㎢⪇⧩㣡⫑㮾⭆夕㚙喉⫑☨㮤㫥㮤㝛(HFD-R/S/T)ᮣ 㟜⒋㔶㣡⶙Ⰹⰶ㮤㫥㮤㝛㮜㗄㱫ᱨ☏㗁⶙ㅢ㯜㢜㔶␤⒏⭨ 㝎㗜☨㝣⭩⏮厶✚㗖☡㦎㺨ᮣ㵀⳱㝛㎩ⷆ㥲ᱨⓞ㲂≠㐩☨ ⶌ齊ᱨ㣄わ㎫㎳╟㫛ᮣ㎫㽂㯌ᱶ㟠㖫㖳㱫㾎▙⤀㾗㫥⻲ᮢ 㾎⡽㢴⛪⧧㾎㨏㠘㎺⊙Ⳉᱨ⪹㚭⛮␤㊹㗓ツᱝ
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Catphan500600Manual中文说明

1 T h e P h a n t o m L a b o r a t o r yC a t p h a n ® 500 and 600 M a n u a lCopyright © 2015WARRANTYTHE PHANTOM LABORATORY INCORPORATED (“Seller”) warrants that this product shall remain in good working order and free of all material defects for a period of one(1) year following the date of purchase. If, prior to the expiration of the one (1) year warranty period, the product becomes defective, Buyer shall return the product to theSeller at:B yMailTruck ByThe Phantom Laboratory, Incorporated The Phantom Laboratory, Incorporated2727 State Route 29 PO Box 511Greenwich, NY12834 Salem, NY 12865-0511Seller shall, at Seller’s sole option, repair or replace the defective product. The Warranty does not cover damage to the product resulting from accident or misuse.IF THE PRODUCT IS NOT IN GOOD WORKING ORDER AS WARRANTED, THESOLE AND EXCLUSIVE REMEDY SHALL BE REPAIR OR REPLACEMENT,AT SELLER’S OPTION. IN NO EVENT SHALL SELLER BE LIABLE FOR ANY DAMAGES IN EXCESS OF THE PURCHASE PRICE OF THE PRODUCT. THIS LIMITATION APPLIES TO DAMAGES OF ANY KIND, INCLUDING, BUT NOT LIMITED TO, DIRECT OR INDIRECT DAMAGES, LOST PROFITS, OR OTHER SPECIAL, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, WHETHER FORBREACH OF CONTRACT, TORT OR OTHERWISE, OR WHETHER ARISING OUTOF THE USE OF OR INABILITY TO USE THE PRODUCT. ALL OTHER EXPRESSOR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANT ABILITY AND FITNESS FOR PARTICULAR PURPOSE, ARE HEREBY DISCLAIMED.WARNINGThis product has an FH3-4 mm/min flame rating and is considered to be flammable. It is advised not to expose this product to open flame or high temperature (over 125° Celsiusor 250° Fahrenheit) heating elements.CTP500CTP60012/18/1523 T h e P h a n t o m L a b o r a t o r yCatphan® ManualContentsWarranty 1Introduction 5Multi-Slice CT by David Goodenough, Ph.D. 6Initial phantom positioning 8Illustration of Catphan® models 9Incremental phantom modules positioning 10Phantom position verification 11CTP401 and CTP404 modules 12Patient alignment system check 13Scan slice geometry (slice width) 14Scan incrementation 15Circular symmetry 16Spatial linearity of pixel size verification 16Spherical acrylic contrast targets 16CT or Hounsfield Numbers by David Goodenough, Ph.D. 17Sensitometry (CT number linearity) 18CTP591 Bead Geometry Module 20Measuring slice thickness with a profile made from bead image 22Additional methods for estimating and measuring slice thickness with bead ramps 23 CTP528 High resolution module with 21 line pair per cm gauge and point source 24 Bead point source for point spread function and MTF 24Use of automated scanner MTF programs 25Bead point source (slice sensitivity profile) 2621 Line pair per centimeter high resolution gauge 27CTP515 Low contrast module with supra-slice and subslice contrast targets 28CTP486 Image uniformity module 30Installation and removal of test modules 32Optional phantom annuli 33Optional phantom housings 34Dose Phantoms 35Sample quality assurance program 36Automated computer analysis program 36Bibliography 3745 IntroductionThe Phantom Laboratory and physicist, David J. Goodenough, Ph.D., are continually developing and researching new tests and modifications for the Catphan® phantoms.The test objects that make up the current Catphan® models embody more than aquarter century of scientific evaluation and field experience. This manual outlines the applications of each module contained in the Catphan® 500 and 600 phantoms.We do not make specific recommendations on the content of your quality assurance program, because each medical imaging facility has its own unique set of requirements.A sample program is provided to give you ideas for possible program content. Wesuggest a review of local governing regulations, manufacturers’ specifications and the needs of your radiologists and physicists before developing your CT quality assurance program.The Catphan® instructional video, which illustrates the phantom setup and scanning ofthe different Catphan® sections, is also available.If you have any additional questions please contact The Phantom Laboratory at:Phone: 800-525-1190 or 518-692-1190Fax: 518-692-3329email: sales@Additional product information is available at: 6Multi-Slice CTby David J. Goodenough, Ph.D.At the request of The Phantom Laboratory I have put together this summary forphysicists who are familiar with CT image performance measurements and have not had experience with multi-slice CT scanners.Multi-slice uses the same basic approach to image reconstruction as axial single slice CT.Both modalities use the data from the detectors (positioned 360° around the patient) to reconstruct the axial patient images. The key difference between axial single slice CT and multi-slice is the axial image produced by single slice CT is developed from a single row of detectors, and the axial image made from a multi-slice scanner uses segments from several rows of detectors. With a multi-slice scan, as the patient moves through the gantry and the tube rotates around the patient, the detector rows utilized change as the patient and gantry move (see sketch on the next page).Additional variables in reconstruction result as the patient slice moves from one row of detectors to the next and the scanner reconstructs the images based on weightedaverages between the relevant rows. In this way, multi-slice CT is analogous to spiral or helical single slice CT, but where the reconstruction is obtained from the combined slices rather than the interpolation between the readings of a single moving slice. Now add in focal spot variables and a little scatter to define in more detail the challenges and variables included in the reconstruction of a multi-slice image.Because in spiral mode each multi-slice image is reconstructed from an ensemble of data taken in different positions across the beam and from different detector rows, the overall image quality differences between images are minimal. In the spiral mode each slice represents data as seen from all detector rows in a sense a kind of averaging of detector row positions. However, if you use a multi-slice “step and shoot” mode, where each of the slices may be created from a single detector row (or rows depending on the selected slice thickness) with a consistent collimation, the differences between the slices will be evident. Step and shoot mode in a multi-slice CT scanner is operated like a conventional axial scanner by imaging with a fixed table position and then moving the table to the next position before imaging the next section of the phantom with a fixed table position.For example, with a step and shoot 8 slice scan it is expected that the middle slicenumbers 4 and 5 will have better uniformity than outer slice numbers 1 and 8 because of the scanner x-ray beam geometry. However, if 1 and 8 or 4 and 5 are not similar, this may indicate a problem with the scanner.When assessing a scanner with a step and shoot mode, it is important to cover the full detector width with the selected test objects. If the test object is narrower than the slice, the table will need to be incremented between scanning sequences so the object can be scanned by all active rows of the detector.I recommend scanning through the entire phantom using different multi-slice spiralprotocols for performance evaluations, as well as using the step and shoot approach for the bead ramps where slice geometry and the MTF can be measured for each slice and uniformity section where the signal to noise and uniformity of each slice (detector row) can be evaluated.7This simplified illustration of a multi-slice sequence shows how the slices are reconstructed with information for different detector rows. The imaging sequence ofthe first selected slice (slice 1) of the patient begins when slice 1 moves over detectorrow A. As the tube continues to rotate and the patient continues to move through the gantry, slice 1 is picked up by the detectors in row B. At the same time slice 2, whichwas outside the detector view, is picked up by the detectors in row A. This sequence continues until the last selected region of the patient has passed through all the active detector rows.8The Catphan® phantom is positioned in the CT scanner by mounting it on the case.Place the phantom case on the gantry end of the table with the box hinges away from the gantry. It is best to place the box directly on the table and not on the table pads.Open the box, rotating the lid back 180°. If you are using an annulus, additional weight will need to be placed in the box to counterweigh the phantom. The patient straps can be used for additional stability.Remove the phantom from the box and hang the Catphan® from the gantry end of the box. Make sure the box is stable with the weight of the phantom and is adequatelycounterweighed to prevent tipping.Use the level and adjusting thumb screws to level the Catphan®. Once the phantom is level, slide the phantom along the end of the box to align the section center dots on the top of the phantom with the x axis alignment light.Use the table height and indexing drives to center the first section’s (CTP401 or CTP404, Slice Geometry) alignment dots on the side and top of the phantom with the scanner alignment lights.The z axis scan alignment position can be selected from the localizer scan, by centering the slice at the intersection of the crossed wire image created by the slice width ramps.Scan the first section (CTP401 or CTP404) and check the image for proper alignment as illustrated in the Phantom position verification section.9 Illustration of Catphan® 500 and 600 modelsCatphan® 500Catphan® 60010Incremental phantom module positioningThe Catphan® phantoms are designed so all test sections can be located by preciselyindexing the table from the center of section 1 (CTP401 or CTP404) to the center of eachsubsequent test module. This design eliminates the need to remount the phantom oncethe position of section 1 (CTP401 or CTP404) has been verified. The indexing distancesfrom section 1 are listed below. Additional illustrations on the preceeding page show thetest modules and their index spacing. Phantom position and alignment verification isdescribed on the next page.Catphan® 500 test module locations:Module Distance from section 1 center CTP401CTP528, 21 line pair high resolution 30mm40mmsourcePointCTP528.CTP515, Subslice and supra-slice low contrast 70mmCTP486, Solid image uniformity module 110mm Catphan® 600 test module locations:Module Distance from section 1 center CTP404geometry 32.5mm BeadCTP591CTP528, 21 line pair high resolution 70mmsource80mmPointCTP528.CTP515, Subslice and supra-slice low contrast 110mmCTP486, Solid image uniformity module 150mmPhantom position verificationBy evaluating the scan image of section 1 (CTP401 or CTP404) the phantom’s position and alignment can be verified. The section contains 4 wire ramps which rise at 23° angles from the base to the top of the module. The schematic sketches below indicate how the ramp images change if the scan center is above or below the z axis center of the test module. The use of the scanner’s grid image function may assist in evaluation ofphantom position.In this image the x, y symmetry of the centered ramp images indicates proper phantom alignment.When the ramps are evenly rotated clockwise from center, the phantom is too far into the gantry.When the ramps are evenly rotated counter-clockwise from center, the phantom needs to be moved toward the gantry.Poor alignment with the z axis is indicated when the ramps are not symmetrical in lenghts and rotation.If misalignment is indicated by the scan image, the phantom should be repositioned to obtain proper alignment and then rescanned. If the images of the repositioned phantom duplicate the original misalignment indications, the scanner’s alignment lights may require adjustment (contact your local service engineer).Once correct alignment has been established, you can proceed with the tests.CTP401 Module with slice width, sensitometry and pixel sizeCTP404 Module with slice width, sensitometry and pixel sizePatient alignment system checkThe laser, optical, and mechanical patient alignment system can be checked for accuracy. Align the white dots on the phantom housing with the alignment lights as discussedin Initial phantom positioning. The scanned image should show good alignment as discussed in Phantom position verification.For measuring the z axis alignment accuracy, measure from the center of the ramp image to the part of the ramp which aligns with the center of the phantom and sensitometry samples. Multiply the distance A by 0.42 to determine the z axis alignment light accuracy. To evaluate x and y accuracy, measure from the center of the phantom to the center of the scan field by use of the grid function or knowledge of the central pixel location.The accuracy of the localizer, pilot or scout view can be checked. To check this function perform a localization scan of the phantom. Align an axial scan at the crossing point of the wire ramps. Scan this axial cut and check the misalignment as discussed above.Scan slice geometry (slice width)Section 1 has two pairs of 23° wire ramps: one pair is oriented parallel to the x axis; the other pair to the y axis. These wire ramps are used to estimate slice width measurements and misalignment errors as previously discussed.The 23° wire ramp angle is chosen to improve measurement precision through the trigonometric enlargement of 2.38 in the x-y image plane.To evaluate the slice width (Zmm), measure the Full Width at Half Maximum (FWHM) length of any of the four wire ramps and multiply the length by 0.42:(Zmm) = FWHM * 0.42To find the FWHM of the wire from the scan image, you need to determine the CT number values for the peak of the wire and for the background.To calculate the CT number value for the maximum of the wire, close down the CT “window” opening to 1 or the minimum setting. Move the CT scanner “level” to the point where the ramp image just totally disappears. The CT number of the level at this position is your peak or maximum value.To calculate the value for the background, use the region of interest function to identify the “mean” CT number value of the area adjacent to the ramp.Using the above CTvalues, determine the half maximum:First calculate the net peak... (CT # peak - background = net peak CT #) Calculate the 50% net peak... (net peak CT # ÷ 2 = 50% net peak CT #) Calculate the half maximum CT number...(50% net peak CT # + background CT # = half maximum CT #)Now that you have determined the half maximum CTnumber, you can measure thefull width at half maximum of the ramp. Set the CT scanner level at the half maximum CT value and set your window width at 1. Measure the length of the wire image to determine the FWHM. Multiply the FWHM by 0.42 to determine the slice width.Schematic illustration of two sequential 5mm scans superimposed. L1 isthe center point on the 23° ramp in the first scan image and L2 is thecenter point on the 23° ramp on the second image.Scan incrementationUse the wire ramps to test for proper scanner incrementation between slices, and for table movement.Scan section 1 using a given slice width, (e.g. 5mm). Increment the table one slice width (e.g. 5mm) and make a second scan. Establish the x and y coordinates for the center of each ramp image. Calculate the distance between these points and multiply by the 23° ramp angle correction factor of 0.42.0.42(L1 - L2) = scan incrementationThis test can also be used to test table increment accuracy. Scan the section and increment the table 30mm in and out of the gantry and scan again. The ramp centers should be the same on both images.0.42(L1 - L2) = 0Circular symmetry of display systemThe circular phantom sections are used to test for circular symmetry of the CT image, including calibration of the CT display system. If an elliptical image is produced, the x-y balance of the image display system should be adjusted.Measuring spatial linearity in x and y axes.Spatial linearity of pixel size verificationThis section has four holes (one with a Teflon pin). These 3mm diameter holes are positioned 50mm on center apart. By measuring from center to center the spatial linearity of the CT scanner can be verified. Another use is to count the number of pixels between the hole centers, and by knowing the distance (50mm) and number of pixels, the pixel size can be verified.The Teflon pin is used for identification and orientation only. The ability to change the Teflon pin position enables organizations with more than one Catphan® phantom to identify their phantoms by images of the first section.Spherical acrylic contrast targetsThe section has five acrylic spheres located in a 30mm diameter circular pattern. These spheres are used to evaluate the scanner’s ability to image volume averaged spheres. The sphere diameters are 2, 4, 6, 8, and 10mm.CT or Hounsfield Numbersby David Goodenough, Ph.D.Users of CT systems are often surprised when the CT number of a given tissue or substance is different from what they expect from previous experience. These differences do not usually indicate problems of a given CT scanner, but more likely arise from the fact that CT numbers are not universal. They vary depending on the particular energy, filtration, object size and calibration schemes used in a given scanner. One of the problems is that we are all taught that the CT number is given by the equation:CT# = k(µ - µw)/µw,where k is the weighting constant (1000 is for Hounsfield Scale), µ is the linear attenuation coefficient of the substance of interest, and µw is the linear attenuation coefficient of water. Close review of the physics reveals that although the above equation is true to first order, it is not totally correct for a practical CT scanner. In practice, µ and µw are functions of energy, typical x-ray spectra are not monoenergetic but polychromatic, and a given spectrum emitted by the tube is “hardened” as it is transmitted (passes) through filter(s) and the object, finally reaching the detector. More accurately, µ=µ(E), a function of energy. Therefore:CT#(E) = k(µ(E) - µw(E))/µw(E)Because the spectrum is polychromatic we can at best assign some “effective energy” Ê to the beam (typically some 50% to 60% of the peak kV or kVp). Additionally, the CT detector will have some energy dependence, and the scatter contribution (dependent on beam width and scanned object size, shape, and composition) may further complicate matters. Although the CT scanner has a built in calibration scheme that tries to correct for beam hardening and other factors, this is based on models and calibration phantoms that are usually round and uniformly filled with water, and will not generally match the body “habitus” (size, shape, etc.).The situation is really so complicated that it is remarkable that tissue CT numbers are in some first order ways “portable”!In light of the above we can examine a parameter of CT performance, the “linearity scale”, as required by the FDA for CT manufacturer’s performance specifications.The linearity scale is the best fit relationship between the CT numbers and the corresponding µ values at the effective energy Ê of the x-ray beam.The effective energy Ê is determined by minimizing the residuals in a best-fit straight line relationship between CT numbers and the corresponding µ values.In review, we will encounter considerable inter and intra scanner CT number variability. CT numbers can easily vary by 10 or more based on kVp, slice thickness, and object size, shape, and composition. There is some possibility of the use of iterative techniques and/ or dual energy approaches that might lessen these effects, but certainly CT numbers are not strictly portable and vary according to the factors listed above.More complete scientific references are contained in the bibliography. In particular, references 2, 13, 14, and 20 are recommended for those with greater interest in the topic.Sensitometry (CT number linearity)The CTP404 module has sensitometry targets made from Teflon®, Delrin®, acrylic, Polystyrene and low density polyethylene (LDPE), polymethylpentene (PMP) and air.The Catphan® 600 is also equipped with a small vial which can be filled with waterand inserted into the top hole of the CTP404 module. The CTP401 module has Teflon, acrylic and low density polyethylene (LDPE) and air targets. These targets range from approximately +1000 H to -1000 H.The monitoring of sensitometry target values over time can provide valuable information, indicating changes in scanner performance.Nominal material formulation and specific gravityMaterial Formula Z eff1Specific Gravity2 HU range3Air .78N, .21O, .01Ar 8.00 0.00 -1046 : -986PMP [C6H12(CH2)] 5.44 0.83 -220 : -172LDPE [C2H4] 5.44 0.92 -121 : -87Water [H2O] 7.42 1.00 -7 : 7Polystyrene [C8H8] 5.70 1.03 -65 : -29Acrylic [C5H8O2] 6.47 1.18 92 : 137Delrin® Proprietary 6.95 1.42 344 : 387Teflon® [CF2] 8.43 2.16 941 : 1060Electron density and relative electron densityMaterial Electron Density Electron Density Relative Electron (1023e/g) (1023e/cm3) Density4Air 3.002 0.004 0.0010.853PMP 5 3.435 2.8510.945LDPE 6 3.435 3.1601.0003.343Water3.3433.3350.9983.238Polystyrene1.1473.248 3.833AcrylicDelrin® 3.209 4.557 1.363Teflon® 2.890 6.243 1.8681Z eff, the efective atomic number, is calculated using a power law approximation.2For standard material sensitometry inserts The Phantom Laboratory purchases a multiple year supply of material from a single b atch. Samples of the purchased material are then measured to determine the actual specific gravity. The specific gravity of air is taken to be .0013 at standard temperature and pressure. For custom cast materials the specific gravity of each cast batch is noted and supplied with the phantom.3These are maximum and minimum measured values from a sample of 94 scans using different scanners and protocols. HU can vary dramatically between scanners and imaging protocols and numbers outside of this range are not unusual.4Relative Electron Density is the electron density of the material in e/cm3divided by the electron density of water (H2O) in e/cm3.5 Polymethylpentene6Low Density PolyethyleneAn excel file with the linear attenuation coefficient µ [units cm-1] for the sensitometry materials can be downloaded from our web site.Contrast Scale (CS) is formally defined asCS = µm (E) - µw (E)CT m (E) – CT w (E)where m is reference medium, and w is water, and E is the effective energy of the CT beam.Alternatively, CS = µ1 (E) - µ2 (E)CT1 (E) – CT2 (E)where 1,2 are two materials with low z effective, similar to water (eg. acrylic & air). Linear attenuation coefficient µ [units cm-1]CTP591 Bead Geometry ModuleThe Bead Geometry Module contains 3 pairs ( 2 coarse and 1 fine) of opposed ramps and2 individual beads. Two of the ramp pairs have 0.28mm diameter beads, spaced 1mm on center in the z direction. The other ramp pair has 0.18mm diameter beads, spaced 0.25mm on center in the z direction. The 2 individual beads are 0.28mm and 0.18mm in diameter. A 50µ diameter tungsten wire is located 6cm from the center of the module. The wire and beads create point spreads that can be used to calculate the MTF (see the CTP528 section of this manual).In the sketch below you can see both the fine and coarse bead ramps. The fine has .25mm y axis steps and the coarse have 1mm steps. You will also see the ramps crossing due to the fact that the ramps are placed in pairs and you see both ramps in the pair from this side view .To illustrate how the bead ramps are used, the following illustration shows both a 1mm and 2mm slice going through a bead ramp. You may note thatas the slice thickness increases, the peak CT value for the beads decrease. This is because as the slice thickness increases, the bead’s effect on the CT number of the voxel decreases, due to volume averaging. Presuming the slice thicknesses are accurate, the peak signal over background in a 1mm slice should be double that of the peak signal over the background in the 2mm slice.Measuring slice thickness with a profile made from an image of the beads Please note in this example 0.25mm spaced slice ramps are used, rather than the 1mm spaced slice ramps. The methodology for both would be basically the same, however for thinner slices the use of the fine ramps improve measurement precision. Below we usea 1mm slice scan to illustrate the use of a profile made from a line running through the bead images on the scan.Scan of CTP591 with 1mm slice widthVertical Profile of a 1mm slice through the fine .025mm beadramps after zooming or magnificationWhen we use a profile line through the beads, there will be peaks at each of the bead locations and these will be separated by 0.25mm from each other. Thus for example,for the 1.0mm slice width we measure about four bead spacings at the Full Width at Half Maximum (FWHM). Multiplying the four bead spacings times the y axis increment 0.25mm per bead yields a 1mm slice width.Another method for counting beads would be to measure the maximum CT number of the beads. This can be done by adjusting the window width to 1 and raising the level until the beads disappear and noting the peak level. Next, do an ROI of the area adjacent to the ramp to get a number for the background. Keeping the window width at 1, raise the level to half between background and peak (half maximum) and count the beads.We can make this somewhat more analytic by noting the following. If we hand-draw, or use a mathematical “best fit” bell shaped curve (Gaussian) to the data points, you will notice that the peak CT number for the 1.0mm slice is about 650 H and the baseline is about 50, leaving a net value of about 600H between the peak value and the baseline. Thus, ½ the (net) maximum value is 300H + the baseline of about 50H so we draw a line across the 350H ordinate (Y) value and measure the length of the line that spans the two FWHM points at, in this case, 350H.When measuring the FWHM of the curve it is important to realize that due to scaling and translation variables the scale of the FWHM length needs to be defined. This is done using the distance between the individual bead peaks in the profile whose absolute separation is known (.25mm for fine ramps and 1mm for coarse ramps). For example for the fine ramps divide the FWHM by the distance between bead peaks and multiply by.25mm.Vertical Profile of a 0.5mm slice through the fine .025mm beadramps after zooming or magnificationPlease note, the typical tolerance allowed is somewhere between 0.5mm and 10% depending on the vendor.Additional methods for estimating and measuring slice thicknesses with the bead rampsA ssp of the bead(s) can be used to measure slice thickness (see CTP528 section for additional information).Sagital and coronal slices through the beads can also be used to measure the axial slice width. In this case measure the z axis length at the full width at half maximum of a bead image to establish the slice thickness. However this tecnique is limited in precision z axis of the voxels.The volume averaging effect on the net peak CT number of the bead can be used to approximate additional slice thickness measurements after measuring one slice’s thickness by using the following equation:w = slice width of additional slice thickness.npvm = net peak value of the bead in the measured slice widthmsw = slice width of the measured slicenpva = net peak value of the bead in the additional slice widthw = (npvm / npva)*mswNote: Net peak value = (CT# of the bead) - (CT# of the background)。

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• Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132 PDS-1311B Printed in U.S.A. April, 1996
TMIN to TMAX 1s; Partial Discharge ≤ 5pC
1500 2500 2500 120 95 1014 || 2 1.4 0.15 ±50 0.046 60 ± 1.2 3 115
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1500Vrms VISO = 240Vrms, 50Hz G=1 G=1 G=1
2 ±0.3 ±0.1
±5 ±5
±100
Slew Rate Settling Time, 0.1%
POWER SUPPLIES Rated Voltage Voltage Range Quiescent Current Rated Output Voltage Load Regulation Line Regulation SYNC Frequency Output Voltage Ripple TEMPERATURE RANGE Operating Storage

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MDE Semiconductor, Inc.78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 • Fax: 760-564-2414SMDJ SERIESSURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORVOLTAGE-5.0 TO 170 Volts3000 Watt Peak Pulse PowerFEATURES• For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief• Glass passivated junction • Low inductance• Excellent clamping capability• Repetition rate (duty cycle):0.01%• Fast response time: typically less than1.0 ps from 0 volts to BV for unidirectional types • Typical IR less than 1µA above 10V • High temperature soldering: 250°C/10 seconds at terminals• Plastic package has Underwriters Laboratory Flammability Classification 94 V-OMECHANICAL DATACase: JEDEC DO214AB. Molded plastic over glass passivated junctionTerminals: Solder plated, solderable per MIL-STD-750, Method 2026Polarity: Color band denoted positive end (cathode)except BidirectionalStandard Packaging: 12mm tape (EIA STD RS-481)Weight: 0.007 ounces, 0.021 grams)DEVICES FOR BIPOLAR APPLICATIONSFor Bidirectional use C or CA Suffix for types SMDJ5.0 thru types SMDJ170 (e.g. SMDJ5.0C, SMDJ170CA)Electrical characteristics apply in both directions.MAXIMUM RATINGS AND CHARACTERISTICSRatings at 25°C ambient temperature unless otherwise specified.RATING SYMBOL VALUEUNITSPeak Pulse Power Dissipation on 10/1000 µswaveform (NOTE 1, 2, Fig.1)Ippm SEE TABLE 1Amps Superimposed on Rated Load, (JEDEC Method)(Note2, 3)Operatings and Storage Temperature Range Tj, Tstg -55 +150°C NOTES:1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.2. Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.P ppmMinimum 3000Watts Peak Pulse Current of on 10/1000 µs waveform (Note 1,Fig 3)I FSM100Amps Peak Forward Surge Current, 8.3ms Single Half Sine-waveMDE Semiconductor, Inc.MDE Semiconductor, Inc.78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414 3000 Watt Surface Mount TVSUNI- DIRECTIONALPARTNUMBERDEVICEMARKINGCODEUNI-POLARDEVICEMARKINGCODE BI-POLARREVERSESTANDOFFVOLTAGEVRWM (V)BREAKDOWNVOLTAGEVBR (V)MIN. @ ITBREAKDOWNVOLTAGEVBR (V)MAX. @ ITTESTCURRENT(It)mAMAXIMUMCLAMPINGVOLTAGE@Ipp Vc (V)PEAKPULSECURRENTIpp (A)REVERSELEAKAGE@ VRWMIR (µA)SMDJ5.0RDD DDD 5.00 6.407.30109.6312.5800 SMDJ5.0A RDE DDE 5.00 6.407.00109.2326.1800 SMDJ6.0RDF DDF 6.00 6.678.151011.4263.2800 SMDJ6.0A RDG DDG 6.00 6.677.371010.3291.3800 SMDJ6.5RDH DDH 6.507.228.821012.3243.9500 SMDJ6.5A RDK DDK 6.507.227.981011.2267.9500 SMDJ7.0PDL DDL7.007.789.511013.3225.6200 SMDJ7.0A PDM DDM7.007.788.601012.0250.0200 SMDJ7.5PDN DDN7.508.3310.20114.3209.8100 SMDJ7.5A PDP DDP7.508.339.21112.9232.6100 SMDJ8.0PDQ DDQ8.008.8910.90115.0200.050 SMDJ8.0A PDR DDR8.008.899.83113.6220.650 SMDJ8.5PDS DDS8.509.4411.50115.9188.720 SMDJ8.5A PDT DDT8.509.4410.40114.4208.320 SMDJ9.0PDU DDU9.0010.0012.20116.9177.510 SMDJ9.0A PDV DDV9.0010.0011.10115.4194.810 SMDJ10PDW DDW10.0011.1013.60118.8159.65 SMDJ10A PDX DDX10.0011.1012.30117.0176.55 SMDJ11PDY DDY11.0012.2014.90120.1149.35 SMDJ11A PDZ DDZ11.0012.2013.50118.2164.85 SMDJ12PED DED12.0013.3016.30122.0136.45 SMDJ12A PEE DEE12.0013.3014.70119.9150.85 SMDJ13PEF DEF13.0014.4017.60123.8126.15 SMDJ13A PEG DEG13.0014.4015.90121.5139.55 SMDJ14PEH DEH14.0015.6019.10125.8116.35 SMDJ14A PEK DEK14.0015.6017.20123.2129.35 SMDJ15PEL DEL15.0016.7020.40126.9111.55 SMDJ15A PEM DEM15.0016.7018.50124.4123.05 SMDJ16PEN DEN16.0017.8021.80128.8104.25 SMDJ16A PEP DEP16.0017.8019.70126.0115.45 SMDJ17PEQ DEQ17.0018.9023.10130.598.45 SMDJ17A PER DER17.0018.9020.90127.6108.75 SMDJ18PES DES18.0020.0024.40132.293.25 SMDJ18A PET DET18.0020.0022.10129.2102.75 SMDJ20PEU DEU20.0022.2027.10135.883.85 SMDJ20A PEV DEV20.0022.2024.50132.492.65 SMDJ22PEW DEW22.0024.4029.80139.476.15 SMDJ22A PEX DEX22.0024.4026.90135.584.55 SMDJ24PEY DEY24.0026.7032.60143.069.85 SMDJ24A PEZ DEZ24.0026.7029.50138.977.15 SMDJ26PFD DFD26.0028.9035.30146.664.45 SMDJ26A PFE DFE26.0028.9031.90142.171.35 SMDJ28PFF DFF28.0031.1038.00150.159.55 SMDJ28A PFG DFG28.0031.1034.40145.466.15 SMDJ30PFH DFH30.0033.3040.70153.556.15 SMDJ30A PFK DFK30.0033.3036.80148.462.05 SMDJ33PFL DFL33.0036.7044.90159.050.85 SMDJ33A PFM DFM33.0036.7040.60153.356.35MDE Semiconductor, Inc.78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414 3000 Watt Surface Mount TVSUNI- DIRECTIONALPARTNUMBERDEVICEMARKINGCODEUNI-POLARDEVICEMARKINGCODE BI-POLARREVERSESTANDOFFVOLTAGEVRWM (V)BREAKDOWNVOLTAGEVBR (V)MIN. @ ITBREAKDOWNVOLTAGEVBR (V)MAX. @ ITTESTCURRENT(It)mAMAXIMUMCLAMPINGVOLTAGE@Ipp Vc (V)PEAKPULSECURRENTIpp (A)REVERSELEAKAGE@ VRWMIR (µA)SMDJ36PFN DFN36.0040.0048.90164.346.75 SMDJ36A PFP DFP36.0040.0044.20158.151.65 SMDJ40PFQ DFQ40.0044.4054.30171.442.05 SMDJ40A PFR DFR40.0044.4049.10164.546.55 SMDJ43PFS DFR43.0047.8058.40176.739.15 SMDJ43A PFT DFT43.0047.8052.80169.443.25 SMDJ45PFU DFU45.0050.0061.10180.337.45 SMDJ45A PFV DFV45.0050.0055.30172.741.35 SMDJ48PFW DFW48.0053.3065.20185.535.15 SMDJ48A PFX DFX48.0053.3058.90177.438.85 SMDJ51PFY DFY51.0056.7069.30191.132.95 SMDJ51A PFZ DFZ51.0056.7062.70182.436.45 SMDJ54A PGD DGD54.0060.0073.30196.331.25 SMDJ54A PGE DGE54.0060.0066.30187.134.45 SMDJ58PGF DGF58.0064.4078.701103.029.15 SMDJ58A PGG DGG58.0064.4071.20193.632.15 SMDJ60PGH DGH60.0066.7081.501107.028.05 SMDJ60A PGK DGK60.0066.7073.70196.831.05 SMDJ64PGL DGL64.0071.1086.901114.026.35 SMDJ64A PGM DGM64.0071.1078.601103.029.15 SMDJ70PGN DGN70.0077.8095.101125.024.05 SMDJ70A PGP DGP70.0077.8086.001113.026.55 SMDJ75PGQ DGQ75.0083.30102.001134.022.45 SMDJ75A PGR DGR75.0083.3092.101121.024.85 SMDJ78PGS DGS78.0086.70106.001139.021.65 SMDJ78A PGT DGT78.0086.7095.801126.023.85 SMDJ85PGU DGU85.0094.40115.001151.019.95 SMDJ85A PGV DGV85.0094.40104.001137.021.95 SMDJ90PGW DGW90.00100.00122.001160.018.85 SMDJ90A PGX DGX90.00100.00111.001146.020.55 SMDJ100PGY DGY100.00111.00136.001179.016.85 SMDJ100A PGZ DGZ100.00111.00123.001162.018.55 SMDJ110PHD DHD110.00122.00149.001196.015.35 SMDJ110A PHE DHE110.00122.00135.001177.016.95 SMDJ120PHF DHF120.00133.00163.001214.014.05 SMDJ120A PHG DHG120.00133.00147.001193.015.55 SMDJ130PHH DHH130.00144.00176.001230.013.05 SMDJ130A PHK DHK130.00144.00159.001209.014.45 SMDJ150PHL DHL150.00167.00204.001268.011.25 SMDJ150A PHM DHM150.00167.00185.001243.012.35 SMDJ160PHN DHN160.00178.00218.001287.010.55 SMDJ160A PHP DHP160.00178.00197.001259.011.65 SMDJ170PHQ DHQ170.00189.00231.001304.09.95 SMDJ170A PHR DHR170.00189.00209.001275.010.95 For Bidirectional type having Vrwm of 10volts and less, the IR limit is double.。

AD823中文资料

Specification subject to change without notice.
Conditions G = +1 VO = 2 V p-p G = –1, VO = 4 V Step G = –1, VO = 2 V Step
Min 12 14
AD823A Typ 16 3.5 22 320 350
3V
GND
PRODUCT DESCRIPTION
500mV
200µs
The AD823 is a dual precision, 16 MHz, JFET input op amp that can operate from a single supply of +3.0 V to +36 V, or dual supplies of ± 1.5 V to ± 18 V. It has true single supply capability with an input voltage range extending below ground in single supply mode. Output voltage swing extends to within 50 mV of each rail for IOUT ≤ 100 µA providing outstanding output dynamic range. Offset voltage of 800 µV max, offset voltage drift of 2 µV/°C, input bias currents below 25 pA and low input voltage noise provide dc precision with source impedances up to a Gigohm. 16 MHz, –3 dB bandwidth, –108 dB THD @ 20 kHz and 22 V/µs slew rate are provided with a low supply current of 2.6 mA per amplifier. The AD823 drives up to 500 pF of direct capacitive load as a follower, and provides an output current of 15 mA, 0.5 V from the supply rails. This allows the amplifier to handle a wide range of load conditions. This combination of ac and dc performance, plus the outstanding load drive capability results in an exceptionally versatile amplifier for applications such as A/D drivers, high-speed active filters, and other low voltage, high dynamic range systems. REV. 0

HAS200-S中文资料

PINS ARRANGEMENT
1 = +15V 2 = 15V 3 = OUT PUT 4 = 0V
LEM reserves the right to change limits and dimensions.
== 20 30
± 15
V
± 15
mA
30,000
At
3
kV
5001)
V
> 1000 MΩ
± 4V ±
Output internal resistance Load resistance
approx. 100
Ω
>1
kΩ
Accuracy - Dynamic performance data
X
εL
VOE VOH
VOT
ε TC G
IPN = VOUT =
50 .. 600 A ±4V
Electrical data
Primary nominal r.m.s. current
I (A) PN
50 100 200 300 400 500 600
Primary current measuring range
I (A)
P
± 150 ± 300 ± 600 ± 900 ± 900 ± 900 ± 900
m
Mass
Standards 4)
- 10 .. + 80 °C
- 25 .. + 80 °C
approx. 60
gEN 50178源自Features• Hall effect measuring principle • Galvanic isolation between primary

LINE6 HD500中文说明书1

POD® HD500PILOT’S GUIDEMANUEL DE PILOTAGEPILOTENHANDBUCHPILOTENHANDBOEKMANUAL DEL PILOTO40-00-0351 Rev C Pilot’s Guide also available at /manuals ©2013 Line 6, Inc.CAUTION: This equipment has been tested and found to comply with the limits for a Class B digital device pursuant to Part 15 of FCC Rules. Operation is subject to the following two conditions: (1) This device may not cause harmful interference, and (2) this device must accept any interference received, includ-ing interference that may cause undesired operation.Important Safety InstructionsWARNING : TO REDUCE THE RISK OF FIRE OR ELECTRIC SHOCK, DO NOT EXPOSE THE APPLIANCE TO RAIN OR MOISTURE.WARNING : TO REDUCE THE RISK OF FIRE OR ELECTRIC SHOCK, DO NOT REMOVE SCREWS. NO USER-SERVICEABLE PARTSINSIDE. REFER SERVICING TO QUALIFIED SERVICE PERSONNEL.The lightning symbol within a triangle means “electrical caution!” It indicates the presence of information about operating voltage and potential risks of electrical shock.The exclamation point within a triangle means “caution!” Pleaseread the information next to all caution signs.SERIAL NO:Please Note:Line 6, POD and Variax are trademarks of Line 6, Inc. registered in the U.S. and other countries.DT50 is a trademark of Line 6, Inc. All rights reserved.Line 6, Inc.:The POD, Clifton House, Butler’s leap.Rugby, Warwickshire, United Kingdom, CV 21 3RQ 26580 Agoura Road,Calabasas, CA 91302-1921 USAto inspire your creativity. With an extensive collection of HD amps, 100+ When you’re ready to dig deeper, we recommend you get the Advanced -load the free POD HD500 Edit softwar e application from our Downloads page. Basic operations are covered here in this user manual, so let’s get started.Welcome To POD HD500XYou should read these Important Safety Instructions. Keep these instructions in a safe placeyour outlet, consult an electrician for replacement of the obsolete outlet.plug is damaged, liquid has been spilled or objects have fallen into the apparatus, the apparatus has been exposed to rain or moisture, does not operate normally, or has been dropped.1.2.3.4.5.6.7.8.9.10.11.12.13.14.15.16.17.18.19.20.21.22.24.25.26.29.ON DISABLEDOFF 28.27.HD Amp Model Block48 Second LooperMulti Effect。

AQY282S中文资料

60 V 0.35 (0.5) A 1.05 A
( ): in case of using only 1 channel 100 ms (1 shot), VL = DC
Power dissipation Total power dissipation I/O isolatiom voltage Operating temperature Storage temperature
AC/DC type
1,000 pcs.
* Indicate the peak AC and DC values. Notes: (1) Tape package is the standard style. Also available in tube. (Part No. sufﬁx “X” or “Z” is not needed when ordering; Tube: 50 pcs.; Case: 1,000 pcs.) (2) For space reasons, the package type indicator “X” and “Z” are omitted from the seal.
Power dissipation Total power dissipation I/O isolatiom voltage Operating temperature Storage temperature
300 mW 350 mW 1,500 V AC –40°C to +85°C –40°F to +185°F –40°C to +100°C –40°F to +212°F
4.3 .169 4.4 .173 2.1 .083
PhotoMOS RELAYS

汉福德传感器Hansford Sensors HS-557加速度计和温度信号处理模块的中文描述说明书

HS-557 Accelerometer and Temperature Signal Conditioner Module1.Description. The HS-557 Signal Conditioner is used with a 100mV/g constant current type accelerometer (other sensor options available upon request) and either a 10mV/°C or PT-100 temperature sensor to provide dual 4-20mA outputs suitable for direct input to a vibration monitoring PLC. The module 4-20mA output is proportional to true RMS velocity in mm/s. A buffered AC output is provided via the BNC connector and screw terminals to enable vibration analysis using an FFT signal analyser. The unit is housed in a compact DIN-Rail mounting plastic case and operates from 24VDC at 50mA. Terminal connections are shown on the drawing overleaf.2.Accelerometer Input. The HS-557 provides a nominal3.5mA constant current supply to an accelerometer, such as the Hansford Sensors HS-100 Series, which connects directly to the module input terminals.3.Temperature Input.The HS-557 can accept two configurations of temperature signal, a 10mV/°C input, such as a HS-100T, or a PT-100 input, such as the HS-100PT. Both provide an output of 4-20mA with a temperature range of 0-100°C (other ranges available upon request).4.AC Output. A buffered AC output, proportional to acceleration, is provided via the BNC and screw terminal connectors. The 100mV/g signal is DC coupled to the accelerometer output and thus swings about the accelerometer bias voltage (12VDC nominal). If a data-collector is used to monitor this signal for vibration analysis, it must have the sensor power function of the data-collector turned off.5.4-20mA Output – Velocity. The 4-20mA output is proportional to vibration velocity in mm/s RMS, and the circuit incorporates high and low pass filters to limit the measurement bandwidth at 10Hz to 5kHz, as requested by the customer. The output range is set at the factory for 4-20mA = 0-20mm/s peak and alternative ranges can be specified at time of order. On request, this output can be configured at the factory to detect RMS acceleration (g).6.4-20mA Output – Temperature. The 4-20mA output is proportional to temperature in °C. The output is set at the factory for 4-20mA = 0-100°C and alternative ranges can be specified at time of order, up to 140°C.7.System Grounding.To avoid spurious 50Hz pick-up from surrounding equipment it is advisable for the cases of the sensors and the HS-557 power supply 0V to be grounded. This is normally achieved by the sensors being fitted to a grounded machine casing, and the HS-557 power supply 0V being grounded locally. In this instance the screen wires of the sensors should not begrounded at the measurement end in order to avoid grounding loop currents. For this reason, whilst the HS-557 is operating with a 10mV/°C temperature input the accelerometer screen terminals are not internally connected to the power supply 0V.In some applications the machine ground is sufficiently noisy to inject spurious signals into the measurement system. In this instance, the case of the accelerometer should be isolated from the machine casing using an isolating stud, and the screen wire connected, via wire links, from the HS-557 accelerometer screen terminals to the power supply 0V terminals and to ground.8.Connection details for the HS-557 Signal Conditioner (10mV/°C input)9.Terminal ConnectionsConnector FunctionA Accel PWR/SIG InB Accel 0V InC Temp InD Accel PWR/SIG OutE Accel 0V OutF Screen / TempG +24V Power InH Iout + (Vel/g)J Iout + Temp OutK 0V Power InL Iout – (0V) (Vel/g)M Iout – (0V) Temp10.HS-557 SpecificationPower Input ............................................ +24VDC ±10% (regulated) 50mA maxAccelerometer Power ............................. 3.5mA ±20% constant current, 23VDC driving voltage Accel. Input Sensitivity .......................... 100mV/gTemperature Input .................................. 10mV/°C or PT-100Filters ..................................................... 2 pole Butterworth 2Hz – 10kHz (-3dB)Dual 4-20mA Output ............................. Max. load resistance, 450ΩMax. output current (input overload), 21mAAC Output .............................................. Sensitivity 100mV/g (as accelerometer)Output resistance, < 200ΩDC level + 12V nominal (as accelerometer)Connector, BNC and Screw Terminals (50Ω) Dimensions ............................................ 24mm(w) x 75mm(d) x 118mm(overall height)Weight .................................................... 0.1kg11.HS-557 CalibrationThe module velocity output is calibrated at the factory using a sine-wave signal generator to simulate a 100mV/g accelerometer. eg. 200mVrms @ 156Hz = 20mm/s RMS velocity. Should periodic calibration be required, the zero and span adjustment potentiometers are accessible on removal of the left side panel of the module. First, with a milli-ammeter connected in series with the output terminals(H & L) and with no input signal applied, adjust potentiometer RV1 to set the measured output current to 4.0mA.Then apply a sinusoidal input signal, corresponding to the required full-scale velocity level, to the input terminals A & B. This is most easily achieved using the HS-661 Accelerometer Simulator which has switched velocity levels of 5 mm/s RMS and 20mm/s RMS and can be directly connected to the HS-557 input terminals.If a signal generator is to be used to provide the input signal then it will be necessary to connect a3.3Kohm resistor across the input terminals A & B in order to simulate an accelerometer bias voltage. The signal generator should then be connected to terminal A via a 1µF 35V capacitor to block the bias voltage from the signal generator. If a polarized capacitor is used, the positive leg should be connected to terminal A.A signal generator frequency of 156Hz is convenient to use since the required amplitude for a given velocity is easily obtained. ie. 25mm/s = 250mVrms, 50mm/s = 500mVrms etc.When the correct input signal is applied, corresponding to the maximum velocity level required, then adjust potentiometer RV3 to set the output current to 20.0mA.To calibrate the temperature output for a module configured for a 10mV/°C sensor, the milli-ammeter is connected to terminals M and J. With no input signal applied the output current can be set to 4.0mA using potentiometer RV2. A dc voltage corresponding to the maximum temperature (eg. 1.0V = 100°C) is then applied to terminals C and F. The output current can then be adjusted to the maximum 20.0mA using potentiometer RV4.For modules configured for PT100 temperature sensors it is convenient to use a proprietaryPT100 simulator connected to terminals C and F and the output current milli-ammeter connected to terminals M and J. Set the PT100 simulator to the minimum temperature to be measured: eg.0°C (100Ω). It is then necessary to set the internal ambient temperature compensation circuit by adjusting the voltage measured between 0V (terminal F) and test point TP1to 1.0Vdc usingpotentiometer RV5. The output current can now be set to 4.0mA using potentiometer RV2. The PT100 simulator can then be set to the maximum temperature required and the output current set to 20.0mA using potentiometer RV4.。

HT9032中文资料

HT9032中⽂资料HT9032Calling Line Identification Receiver1April 6,2000Features·HT9032B/C/D operating voltage:3.5V~5.5V HT9032F operating voltage:3.0V~5.5V ·Bell 202FSK and V.23demodulation ·Ring detection input and output ·Carrier detection output·Power down mode ·High input sensitivity·HT9032C:16-pin DIP/SOP package HT9032B/F-A:8-pin DIP package HT9032D/F-B:8-pin SOP packageApplications·Feature phones·Caller ID adjunct boxes·Fax and answering machines·Computer telephony interface products ·ADSI productsGeneral DescriptionThe HT9032calling line identification receiver is a low power CMOS integrated circuit de-signed for receiving physical layer signals tran-smitted according to Bellcore TR-NWT-000030and ITU-T V .23specifications.The primary ap-plication of this device is for products used toreceive and display the calling number,or mes-sage waiting indicator sent to subscribers from the central office facilities.The device also pro-vides a carrier detection circuit and a ring de-tection circuit for easier systemapplications.Block DiagramPin AssignmentHT90322April 6,2000fPin DescriptionPin Name I/O DescriptionPower InputsVDD?Power-VDD is the input power for the internal logic.VSS?Ground-VSS is ground connection for the internal logic.PDWN I A logic212on this pin puts the chip in power down mode.When a logic202is on this pin,the chip is activated.This is a schmitt trigger input.ClockX1I A crystal or ceramic resonator should be connected to this pin and X2. This pin may be driven from an external clock source.X2O A crystal or ceramic resonator should be connected to this pin and X1.Ring DetectionsRDET1I It detects ring energy on the line through an attenuating network and enables the oscillator and ring detection.This is a schmitt trigger input.RDET2I It couples the ring signal to the precision ring detector through an attenuating network.RDET=202if a valid ring signal is detected.This is a schmitt trigger in-put.RTIME I/O An RC network may be connected to this pin in order to hold the pin voltage be-low2.2V between the peaks of the ringing signal.This pin controls internal power up and activates the partial circuitry needed to determine whether the incoming ring is valid or not.The input is a schmitt trigger input.The output cell structure is an NMOS output.FSK Signal InputsTIP I This input pin is connected to the tip side of the twisted pair wires.It is inter-nally biased to1/2V DD when the device is in power up mode.This pin must be DC isolated from the line.RING I This input pin is connected to the ring side of the twisted pair wires.It is inter-nally biased to1/2V DD when the device is in power up mode.This pin must be DC isolated from the line.Detection ResultsRDET O This open drain output goes low when a valid ringing signal is detected.When connected to PDWN pin,this pin can be used for auto power up.CDET O This open drain output goes low indicating that a valid carrier is present on the line.A hysteresis is built-in to allow for a momentary drop out of the carrier. When connected to PDWN pin,this pin can be used for auto power up.DOUT O This pin presents the output of the demodulator whenever CDET pin is low. This data stream includes the alternate212and202pattern,the marking,and the data.At all other times,this pin is held high.3April6,2000Pin Name I/O DescriptionDOUTC O This output presents the output of the demodulator whenever CDET pin is low and when an internal validation sequence has been successfully passed.This data stream does not include the alternate212and202pattern.This pin is al-ways held high.Absolute Maximum RatingsVoltages are referenced to V SS,except where noted.Supply Voltage..............................-0.5V to6.0V All Input Voltages....................................25mW Operating Temperature Range.......0°C to70°C Storage Temperature Range.....-40°C to150°CNote:These are stress ratings only.Stresses exceeding the range specified under2Absolute Maxi-mum Ratings2may cause substantial damage to the device.Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged expo-sure to extreme conditions may affect device reliability.D.C.Characteristics Crystal=3.58MHz,Ta=0~70°CSymbol ParameterTest ConditionsMin.Typ.Max.Unit V DD ConditionsV DD Supply Voltage?9032B/C/D 3.55 5.5V9032F 3.05 5.5V I DD1Supply Current5V PDWN=0(3.58MHzOSCon)? 3.25mAI DD2Supply Current5V PDWN=1and RTIME=0(3.58MHz OSC on andinternal circuitspartially on)1.92.5mAI STBY Standby Current5V PDWN=1and RTIME=1(3.58MHz OSC off)??1m A V IL Input Voltage Logic05V0.2V V DD V IH Input Voltage Logic15V?0.8V??V DD I OL Output Voltage Logic05V I OL=1.6mA?0.1V V DD I OH Output Voltage Logic15V I OH=0.8mA0.9V??V DDI IN Input Leakage Current,All Inputs5V?-1?1m AV T-Input Low ThresholdVoltage5V RDET1,RTIME,PDWN 2.0 2.3 2.6V4April6,2000Symbol ParameterTest ConditionsMin.Typ.Max.Unit V DD ConditionsV T+Input High ThresholdVoltage5V RDET1,RTIME,PDWN 2.5 2.75 3.0VV TRDET2Input Threshold Voltage5V RDET2 1.0 1.1 1.2VR IN Input DC Resistance5V TIP,RING?500?k W5April6,2000A.C.Characteristics -FSK DetectionV SS =0V ,Crystal=3.58MHz,Ta=0to 70°C,0dBm=0.7746Vrms @600W SymbolParameter Test Conditions Min.Typ.Max.Unit V DD ConditionsInput Sensitivity:TIP,RING5V -40-45?dBm S/NSignal to Noise Ratio 5V20?dBBand Pass Filter 60Hz 550Hz 2700Hz 3300Hz5V Frequency Response Relative to 1700Hz @0dBm-64-4-3-34dBCarrier Detect Sensitivity5V ?-48?dBm t DOSC Oscillator Start Up Time 5V ??2?ms t SUPD Power Up to FSK Signal Set Up Time 5V ?15??ms t DAQ Carrier Detect Acquisition Time 5V ??14?ms t DCHEnd of Data to Carrier Detect High5V8ms6April 6,2000Functional DescriptionThe HT9032is designed to be the physical layer demodulator for products targeted for the caller ID market.The data signaling interface should conform to Bell202,which is described as fol-lows:·Analog,phase coherent,frequency shift keying ·Logical1(Mark)=1200+/-12Hz·Logical0(Space)=2200+/-22Hz ·Transmission rate=1200bps·Data application=serial,binary, asynchronousThe interface should be arranged to allow sim-ple data transmission from the terminating central office,to the CPE(Customer Premises Equipment),only when the CPE is in an on-hook state.The data will be transmitted in the silent period between the first and second power ring before a voice path is established. The transmission level from the terminating C.O.will be-13.5dBm+/-1.0.The worst case at-tenuation through the loop is expected to be -20dB.The receiver therefore,should have a sensitivity of approximately-34.5dBm to han-dle the worst case installations.The ITU-T V.23 is also using the FSK signaling scheme to transmit data in the general switched tele-phone network.For mode2of the V.23,the modulation rate and characteristic frequencies are listed below:·Analog,phase coherent,frequency shift keying ·Logical1(Mark)=1300Hz ·Logical0(Space)=2100Hz ·Transmissionrate=1200bpsSince the band pass filter of the HT9032can pass the V.23signal,hence the HT9032also can demodulate the V.23signal. Ring detectionThe data will be transmitted in the silent pe-riod between the first and second power ring be-fore a voice path is established.The HT9032 should first detect a valid ring and then per-form the FSK demodulation.The typical ring detection circuit of the HT9032is depicted be-low.The power ring signal is first rectified through a bridge circuit and then sent to a re-sistor network that attenuates the incoming power ring.The values of resistors and capaci-tor given in the figure have been chosen to pro-vide a sufficient voltage at RDET1pin to turn on the Schmitt Trigger input with approxi-mately a40Vrms or greater power ring input from tip and ring.When V T+of the Schmitt is exceeded,the NMOS on the pin RTIME will be driven to saturation discharging capacitor on RTIME.This will initialize a partial power up, with only the portions of the part involved with the ring signal analysis enabled,including RDET2pin.With RDET2pin enabled,a portion of the power ring above1.2V is fed to the ring analysis circuit.Once the ring signal is quali-fied,the RDET pin will be sent low.7April6,2000Application CircuitsApplication circuit 18April 6,2000Operation modeThere are three operation modes of the HT9032.They are power down mode,partial power up mode,and power up mode.The three modes are classified by the following conditions:Modes ConditionsCurrent ConsumptionPower down PDWN=212and RTIME=212<1m APartial power up PDWN=212and RTIME=202 1.9mA typically Power upPDWN=2023.2mA typicallyNormally,the PDWN pin and the RTIME pin control the operation mode of the HT9032.When both pins are HIGH,theHT9032is set at the power down mode,consuming less than 1m A of supply current.When a valid power ring ar-rives,the RTIME pin will be driven below V T-and the portions of the part involved in the ring signal analysis are enabled.This is partial power up mode,consuming approximately1.9mA typically.Once the PDWN pin is below V T-,the part will be fully powered up,and ready to receive FSK.During this mode,the device current will increase to approximately 3.2mA (typ).The state of the RTIME pin is now a 2don ￠t care 2as far as the part is concerned.Af-ter the FSK message has been received,the PDWN pin can be allowed to return to V DD and the part will return to the power down mode.Application circuit2Application circuit39April6,200010April 6,2000Copyright ?2000by HOLTEK SEMICONDUCTOR INC.The information appearing in this Data Sheet is believed to be accurate at the time of publication.However,Holtek assumes no responsibility arising from the use of the specifications described.The applications mentioned herein are used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable without further modification,nor recommends the use of its products for application that may pres-ent a risk to human life due to malfunction or otherwise.Holtek reserves the right to alter its products without prior notification.For the most up-to-date information,please visit our web site at /doc/00a9b727b4daa58da0114a96.html .Holtek Semiconductor Inc.(Headquarters)No.3Creation Rd.II,Science-based Industrial Park,Hsinchu,Taiwan,R.O.C.Tel:886-3-563-1999Fax:886-3-563-1189 Holtek Semiconductor Inc.(Taipei Office)5F,No.576,Sec.7Chung Hsiao E.Rd.,Taipei,Taiwan,R.O.C.Tel:886-2-2782-9635Fax:886-2-2782-9636Fax:886-2-2782-7128(International sales hotline)Holtek Semiconductor (Hong Kong)Ltd.RM.711,Tower 2,Cheung Sha Wan Plaza,833Cheung Sha Wan Rd.,Kowloon,Hong Kong Tel:852-2-745-8288Fax:852-2-742-8657。

CUS515资料

CUS SERIES - 1 WATTCUS non-regulated DC/DC converters offer short circuitprotection and 500 VDC isolation in an industry standardDIP package. Available in 5 or 12 V olt input versions, the CUS is ideal for industrial and EDP applications. Please seethe CUD series for dual output applications.DESCRIPTIONFEATURES•5V and 12V Inputs •Input Pi Filter •Low Profile DIP Package•500V Isolation•Industry Standard Package •Industry StandardPinout •85°C Case Operation •Short Circuit Protection1.25”(31.8mm)0.80”(20.3mm)0.40”(10.2mm)Note: For model options, see the last page of this file.Rev. 08/2000OPTIONSWhen ordering equipment options, use the following suffix information. Select the option(s) that you prefer and add them to the model number. Example ordering options are located below the options table.OPTION SUFFIX APPLICABLE SERIES REMARKSNegative Logic N HAS, HBD, HBS, HES, LES, QBS,QES, TES, TQD TTL “Low” Turns Module ON TTL “High” Turns Module OFFLucent Compatible Trim T HAS, HBD, HBS, HES, QBS, QES Terminal Strip TS XWS, XWD, XWTTrim1IAS, LESEnable2IAD, IAS, LES, SMSTrim and Enable3IAS, LESCurrent Share4SMSHeaderless Y Encapsulated EWS, IWS, OWSPIN LENGTH AND HEATSINK OPTIONS Standard Pin Length is 0.180”(4.6mm)0.110” (2.8mm) Pin Length8All Units (Except SMS)0.150” (3.8mm) Pin Length9All Units (Except SMS)0.24” (6.1mm) Horizontal Heatsink1H All Units (Except DIP, SIP, and SMPackages)Includes Thermal Pad0.24” (6.1mm) Vertical Heatsink1V All Units (Except DIP, SIP, and SMPackages)Includes Thermal Pad0.45” (11.4mm) Horizontal Heatsink 2H All Units (Except DIP, SIP, and SMPackages)Includes Thermal Pad0.45” (11.4mm) Vertical Heatsink2V All Units (Except DIP, SIP, and SMPackages)Includes Thermal Pad0.95” (24.1mm) Horizontal Heatsink 3H All Units (Except DIP, SIP, and SMPackages)Includes Thermal Pad0.95” (24.1mm) Vertical Heatsink3V All Units (Except DIP, SIP, and SMPackages)Includes Thermal PadExample Options:HBS050ZG-ANT3V = HBS050ZG-A with negative logic, Lucent compatible trim, and0.95” vertical heatsink.LES015YJ-3N = LES015YJ with optional trim and enable, negative logic.QBS066ZG-AT8 = QBS066ZG-A with Lucent compatible trim and 0.110” pin length.NUCLEAR AND MEDICAL APPLICATIONS Power-One products are not authorized for use as critical components in life support systems, equipment used in hazardous environments, or nuclear control systems without the express written consent of the President of Power-One, Inc. TECHNICAL REVISIONS The appearance of products, including safety agency certifications pictured on labels, may change depending on the date manufactured. Specifications are subject to change without notice.。

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± 15
V
± 15
mA
30,000
At
3
kV
5001)
V
> 1000 MΩ
± 4V ±
Output internal resistance Load resistance
approx. 100
Ω
>1
kΩ
Accuracy - Dynamic performance data
X
εL
VOE VOH
VOT
ε TC G
polycarbonate PBT recognized according to UL 94-V0
ntages
• Easy mounting • Small size and space saving • Only one design for wide current
ratings range • High immunity to external
LEM Components
981007/4
元器件交易网
HA S 50 to 600-S Dimensions (in mm)
22.8 16 10.4
4.5
r 5 .2
I
20.4 x
432 1
MOLEX
5045-04A
2.5
40
(Max . 8.0)
元器件交易网
Current Transducers HAS 50 to 600-S
For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit).
m
Mass
Standards 4)
- 10 .. + 80 °C
- 25 .. + 80 °C
approx. 60
g
EN 50178
Features
• Hall effect measuring principle • Galvanic isolation between primary
and secondary circuit • Isolation voltage 3000 V~ • Low power consumption • Extended measuring range (3 x IPN) • Insulated plastic case made of
IPN = VOUT =
50 .. 600 A ±4V
Electrical data
Primary nominal r.m.s. current
I (A) PN
50 100 200 300 400 500 600
Primary current measuring range
I (A)
P
± 150 ± 300 ± 600 ± 900 ± 900 ± 900 ± 900
<±1
%
< ± 1 % of IPN
< ± 20
mV
< ± 20 <±2 <±1 < ± 0.1 <3 > 50 DC .. 50
mV mV/K
mV/K
%/K µs
A/µs kHz
General data
TA
Ambient operating temperature
TS
Ambient storage temperature
interference.
Applications
• AC variable speed drives • Static converters for DC motor drives • Battery supplied applications • Uninterruptible Power Supplies
PINS ARRANGEMENT
1 = +15V 2 = 15V 3 = OUT PUT 4 = 0V
LEM reserves the right to change limits and dimensions.
== 20 30
tr di/dt f
Accuracy @ IPN, TA = 25°C (without offset)
Linearity 2) (0 .. ± IPN)
Electrical offset voltage, TA = 25°C
Hysteresis offset voltage @ IP = 0;
after an excursion of 1 x IPN
Type
HAS 50-S HAS 100-S HAS 200-S HAS 300-S HAS 400-S HAS 500-S HAS 600-S
VC IC IOC Vd Vb RIS VOUT 40
ROUT RL
mV
Supply voltage (± 5 %) Current consumption Overload capacity R.m.s. voltage for AC isolation test, 50/60 Hz, 1 mn R.m.s. rated voltage, safe separation Isolation resistance @ 500 VDC Output voltage @ ± IPN, RL = 10 kΩ, TA = 25°C
(UPS) • Switched Mode Power Supplies
(SMPS) • Power supplies for welding
applications.
Notes : 1) Pollution class 2, overvoltage category III. 2) Linearity data exclude the electrical offset. 3) Please refer to derating curves in the technical file to avoid excessive core heating at high frequency. 4) Please consult characterisation report for more technical details and application advice.
Thermal drift of VOE
HAS 50-S
HAS 100 to HAS 600-S
Thermal drift of the gain (% of reading)
Response time @ 90% of IP di/dt accurately followed
Frequency bandwidth (- 3 dB) 3)