Large irreversibility field in nanoscale C-doped MgB2Fe tape conductors

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海岛棉转录因子EREB5基因的克隆及特征研究

海岛棉转录因子EREB5基因的克隆及特征研究
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《拟南芥EDR2定位、Ca结合特性和在Ca依赖性生长中的生理功能研究》范文

《拟南芥EDR2定位、Ca结合特性和在Ca依赖性生长中的生理功能研究》范文

《拟南芥EDR2定位、Ca结合特性和在Ca依赖性生长中的生理功能研究》篇一摘要本研究致力于探索拟南芥中EDR2蛋白的定位、Ca结合特性,以及在Ca依赖性生长过程中的生理功能。

通过生物信息学分析、遗传学实验和细胞生物学技术,我们深入了解了EDR2在植物体内的分布,以及其与Ca离子的相互作用,进而揭示了它在植物Ca依赖性生长过程中的关键作用。

一、引言拟南芥作为一种模式植物,在植物生物学研究中具有重要地位。

EDR2(Enhanced Disease Resistance 2)是拟南芥中一个重要的基因,其在植物抗病及生长发育过程中发挥着重要作用。

近年来,关于EDR2的功能研究逐渐成为植物生物学领域的热点。

特别是其与Ca离子的相互作用及其在Ca依赖性生长中的生理功能,仍需进一步探究。

二、材料与方法1. 材料实验所用的拟南芥材料为野生型和转基因型,实验中所用到的试剂和仪器均符合生物实验的标准要求。

2. 方法(1)生物信息学分析:利用生物信息学软件对EDR2的序列进行分析,预测其可能的定位和功能。

(2)遗传学实验:通过构建转基因拟南芥,研究EDR2的过表达和沉默对植物生长的影响。

(3)细胞生物学技术:利用荧光显微镜、免疫共沉淀等技术,研究EDR2的定位及与Ca的结合特性。

三、结果与分析1. EDR2的定位研究通过生物信息学分析和细胞生物学技术,我们发现EDR2主要定位在细胞膜和细胞质中。

这一发现为后续研究EDR2的功能提供了重要线索。

2. EDR2与Ca的结合特性我们发现EDR2具有与Ca离子结合的能力。

通过免疫共沉淀实验,我们发现EDR2与Ca离子在细胞内存在紧密的相互作用。

这一特性可能使得EDR2在Ca依赖性生长过程中发挥重要作用。

3. EDR2在Ca依赖性生长中的生理功能通过遗传学实验,我们发现EDR2过表达的拟南芥在Ca离子缺乏的环境下表现出更强的生长能力。

相反,EDR2沉默的拟南芥在Ca离子缺乏的环境下生长受到严重抑制。

26457108_生物炭负载纳米Fe3O4强化活性红2厌氧降解

26457108_生物炭负载纳米Fe3O4强化活性红2厌氧降解

生物炭负载纳米Fe 3O 4强化活性红2厌氧降解王福振1,万红友1,赵子升1,张广毅2,窦明1(1.郑州大学生态与环境学院,河南郑州450001;2.郑州大学水利科学与工程学院,河南郑州450001)[摘要]采用化学共沉淀法制备了生物炭负载纳米Fe 3O 4(Fe 3O 4@WB )材料,用于提高厌氧消化过程中电子传递效率进而加速活性红2(RR2)的降解。

采用XRD 、FTIR 等检测方法证实了纳米Fe 3O 4已成功负载于生物炭。

厌氧降解结果表明,Fe 3O 4@WB 显著提高了对RR2废水的厌氧消化性能,与空白组相比,COD 去除率、CH 4产量和RR2的降解率分别提高了14.42%、42.64%和26.81%。

同时,电子传递体系(ETS )活性、辅酶F 420含量及污泥电导率的提高进一步证明了系统的电子传递得到增强。

[关键词]厌氧消化;纳米Fe 3O 4;生物炭;活性红2[中图分类号]X703.1[文献标识码]A[文章编号]1005-829X (2021)05-0058-04Biochar loaded with Nano ⁃Fe 3O 4enhances the anaerobic degradation of reactive red 2Wang Fuzhen 1,Wan Hongyou 1,Zhao Zisheng 1,Zhang Guangyi 2,Dou Ming 1(1.College of Ecology and Environment ,Zhengzhou University ,Zhengzhou 450001,China ;2.School of Water Conservancy Science and Engineering ,Zhengzhou University ,Zhengzhou 450001,China )Abstract :Biochar ⁃loaded nano ⁃Fe 3O 4(Fe 3O 4@WB )has been prepared by the chemical co ⁃precipitation method to improve electron transfer efficiency during reactive red 2(RR2)anaerobic digestion.XRD ,FTIR confirmed that the nano ⁃Fe 3O 4has been loaded on biochar successfully.The results of anaerobic digestion of RR2indicated thatFe 3O 4@WB improved the anaerobic digestion pared with the control reactor ,the COD removal effici ⁃ency ,methane production and degradation rate of RR2were increased by 14.42%,42.64%and 26.81%,respectively.Moreover ,the increase of electron transfer system (ETS )active ,coenzyme F 420concentration and sludge conductivity confirmed the improvement of electron transfer efficiency.Key words :anaerobic digestion ;nano ⁃iron oxide ;biochar ;reactive red 2[基金项目]国家自然科学基金项目(21806145);中国博士后科学基金(2019M662537)偶氮染料被广泛应用于纺织工业,然而在生产过程中约有10%的染料不能被利用而排入纺织废水中〔1〕。

我研究微波遥感的英语作文

我研究微波遥感的英语作文

我研究微波遥感的英语作文Microwave remote sensing is a powerful tool used to gather information about the Earth's surface and atmosphere. It involves the use of microwave radiation to measure various properties of the target, such as temperature, moisture content, and surface roughness. This technologyhas revolutionized our understanding of the Earth and has numerous applications in weather forecasting, agriculture, and environmental monitoring.Microwave remote sensing works by emitting microwave radiation towards the target and measuring the reflected or emitted radiation. The interaction between the microwave radiation and the target provides valuable informationabout its properties. For example, the amount of radiation reflected by a surface can indicate its roughness, whilethe intensity of the emitted radiation can reveal the temperature of an object.One of the advantages of microwave remote sensing isits ability to penetrate through clouds, vegetation, and even some building materials. This allows researchers to gather data in areas that are otherwise inaccessible or obscured by other factors. For example, microwave remote sensing can be used to monitor soil moisture levels in agricultural fields, providing valuable information for farmers to optimize irrigation practices.Another application of microwave remote sensing is in monitoring sea ice and polar regions. By measuring the microwave radiation emitted by sea ice, scientists can track its extent and thickness, providing crucial information for climate studies and navigation purposes. This technology has also been used to monitor changes in glaciers and ice sheets, helping us understand the impact of climate change on these vulnerable regions.In addition to its applications on Earth, microwave remote sensing is also used for planetary exploration. Spacecraft equipped with microwave sensors have been sent to other planets, such as Mars, to study their surface composition and geological features. By analyzing themicrowave radiation reflected or emitted by these planets, scientists can gain insights into their physical properties and potential for supporting life.In conclusion, microwave remote sensing is a versatile and valuable technology that allows us to gather information about the Earth's surface and atmosphere. Its ability to penetrate through various obstacles and its wide range of applications make it an essential tool in many fields of research. As technology continues to advance, we can expect even more exciting discoveries and applications of microwave remote sensing in the future.。

油菜素甾醇类化合物合成研究进展

油菜素甾醇类化合物合成研究进展

油菜素甾醇类化合物合成研究进展刘金娜1,2(1杨凌职业技术学院,陕西杨凌712100;2西北农林科技大学生命科学学院,陕西杨凌712100)摘要油菜素甾醇类化合物能够促进植物生长,提高作物抗性,调节激素平衡,广泛应用于农业生产。

但是,油菜素甾醇类化合物在植物中的含量极低,主要分布在花粉及幼嫩的组织中,提取分离工艺复杂,不易大量获取。

市售的油菜素甾醇类化合物主要通过人工合成的方式获得。

基于生物和化学合成两个方面的思考,本文总结了油菜素甾醇类化合物在植物体内的生物合成途径,并结合工业生产,阐述了油菜素甾醇类化合物相关产品的合成路线,提出了展望,以期为油菜素甾醇类化合物的工业化应用提供参考。

关键词油菜素甾醇类化合物;生物合成;化学合成;展望中图分类号O629.2文献标识码A文章编号1007-5739(2023)22-0067-06DOI:10.3969/j.issn.1007-5739.2023.22.019开放科学(资源服务)标识码(OSID):Research Progress on Synthesis of BrassinosteroidsLIU Jinna1,2(1Yangling Vocational&Technical College,Yangling Shaanxi712100;2College of Life Sciences,North West Agriculture and Forestry University,Yangling Shaanxi712100) Abstract Brassinosteroids can promote plant growth,improve crop resistance,regulate hormone balance,which are widely used in agricultural production.However,the content of brassinosteroids in plants is extremely low,which mainly distributed in pollen and young tissues.The extraction and separation process of brassinosteroids is complex and difficult to obtain in large quantities.The commercially available brassinosteroids are mainly obtained through artificial synthesis.Based on two aspects of biological and chemical synthesis,this paper summarized the biological synthesis pathways of brassinosteroids in plants,expounded on the synthesis routes of brassinosteroids related products in combi-nation with industrial put forward,proposed prospects,so as to provide references for the industrial application of bras-sinosteroids.Keywords brassinosteroid;biological synthesis;chemical synthesis;prospect油菜素甾醇类化合物(brassinosteroids,简称BRs)最早从欧洲油菜的花粉中分离获得,具有促进植物生长、提高作物抗性、调节激素平衡的作用,广泛应用于农业生产。

新建人工深水湖泊沉积物上覆水和孔隙水中溶解性有机质的光谱特征

新建人工深水湖泊沉积物上覆水和孔隙水中溶解性有机质的光谱特征

新建人工深水湖泊沉积物上覆水和孔隙水中溶解性有机质的光谱特征张倩;董靖;吉芳英;牛凤霞;赵艮;沈秋实;何强【摘要】为了揭示湖库内源性污染物的分布、来源、组成及垂向分布特征,以新建人工深水湖泊龙景湖为研究对象,采用紫外-可见光谱和三维荧光光谱技术,研究了该湖泊以成湖前用途划分的3个特征区域(原河道底部、新淹没区底部和新淹没区边坡)的沉积物上覆水和孔隙水中的溶解性有机质(DOM)的光谱特征.结果表明,孔隙水中的DOM芳香性和腐殖化程度高于上覆水;孔隙水中疏水组分含量大于上覆水,且水体中可能存在内源孔隙水释放的低分子量DOM.龙景湖上覆水和孔隙水中的DOM主要源于水体自身的微生物,自生源特征明显,且可能存在新近释放到水体的有机质.龙景湖沉积物上覆水和孔隙水中的DOM以类腐殖酸和类蛋白质为主,且随着深度增加,类腐殖酸峰强度增强,与龙景湖的建湖背景有明显联系.%In order to reveal the sources,compositions,distributions and vertical distribution characteristics of endogenous poilutants in lake sediments,the ultraviolet-visible spectroscopy and three-dimensional fluorescence spectrum technology were applied to study the spectral characteristics.Data used in this work including sediment samples collected from the original riverbed,the newly submerged bottom and the newly submerged edge along the lakeside from the newly-built artificial deep-water lake,Lake Longjing.The divisive criterion of sampling sites is the main applications of those lands before impoundment.Results show that the aromaticity and humification of dissolved organic matter (DOM) in pore water is higher than those of overlying water.The proportion of hydrophobic componentsin pore water is greater than that in overlying water,which means there might be internal input of low molecular weight DOM.Data indicates that DOM of each sample mainly come from aquatic microbial activity within the water body and newlyreleased organic matter might exist.DOM of overlying water and pore water in Lake Longjing sediments mainly include humic-like parts and protein-like parts with humic-like peaks detected in the deeper layers,which indicates a significant association with the construction background of Lake Longjing.【期刊名称】《湖泊科学》【年(卷),期】2018(030)001【总页数】9页(P112-120)【关键词】人工湖;沉积物;腐殖化;紫外-可见光谱;三维荧光光谱;内源污染;龙景湖【作者】张倩;董靖;吉芳英;牛凤霞;赵艮;沈秋实;何强【作者单位】重庆大学三峡库区生态环境教育部重点实验室,低碳绿色建筑国际联合研究中心,重庆400045;重庆大学三峡库区生态环境教育部重点实验室,低碳绿色建筑国际联合研究中心,重庆400045;重庆大学三峡库区生态环境教育部重点实验室,低碳绿色建筑国际联合研究中心,重庆400045;重庆大学三峡库区生态环境教育部重点实验室,低碳绿色建筑国际联合研究中心,重庆400045;重庆大学三峡库区生态环境教育部重点实验室,低碳绿色建筑国际联合研究中心,重庆400045;重庆大学三峡库区生态环境教育部重点实验室,低碳绿色建筑国际联合研究中心,重庆400045;重庆大学三峡库区生态环境教育部重点实验室,低碳绿色建筑国际联合研究中心,重庆400045【正文语种】中文在湖泊生态系统中,溶解性有机质(dissolved organic matter,DOM) 是由腐殖质(包括腐殖酸、富里酸和腐黑物)、氨基酸、脂类、氨基糖、蛋白质和糖类等复杂有机物组成的不均匀混合物[1],其初始物质主要来自于水体动、植物的分泌物及其残体的微生物降解以及陆源有机物的输入[2-3]. DOM作为一种较为活跃的化学组分,在湖泊生态系统中扮演着重要角色,主要体现在对水体的酸碱性、营养物质有效性、重金属及有机污染物等污染物质的环境行为等的重要影响[4-5]. 湖泊沉积物是大量聚集和释放天然有机物和人为污染物的载体[6],湖泊中的沉积物/水界面是物质迁移转化最为活跃的地方,通过表征湖库典型区域沉积物界面上覆水和孔隙水中的DOM的光谱特征,可以揭示湖库DOM的分布、来源、组成以及源汇特征,对湖库内源性污染以及湖泊富营养化的防控具有积极意义.成湖初期的山地城市景观深水湖泊具有深水位、成湖前土地用途较复杂等特点,成湖导致水动力变化,水深增加,水的流速减缓,湖库多为封闭的静止或缓流水体[6]. 成湖初期,湖库具有较差的水体自净能力和较小的环境容量,加之生态环境的变化导致底泥有机质及营养盐的释放,容易引发湖库的富营养化问题. 目前,国内外关于新建大型水库成湖初期的水质和营养物质迁移转化有一定报道[6-7]. 同时,国内外对于各种水体及其沉积物中DOM的光谱特性有一些报道[8-15],研究对象涉及河流[8-10]、湖泊[11,13]、海洋[14]以及河口[15]等. 王立英等[13]运用紫外-可见吸收光谱和荧光光谱研究滇池北部沉积物孔隙水中DOM的含量组成和剖面分布. 傅平青等[1]利用荧光发射光谱和三维荧光光谱研究云贵高原湖泊红枫湖和百花湖中的DOM组成、荧光光谱特性和垂直分布情况. 然而在查阅资料范围内,国内外对于水体中DOM的研究中很少涉及人工深水湖泊成湖初期沉积物上覆水及孔隙水中DOM的光谱特性,也鲜有关于人工湖泊成湖过程中污染物DOM来源的探讨. 本文旨在探究新建人工湖泊沉积物上覆水及孔隙水中DOM的分布、来源、组成及垂向分布特征,进一步分析人工湖泊成湖前底泥特征对其的影响. 本文以2011年建坝蓄水形成的河道型深水湖泊沉积物为研究对象,按照蓄水前土地用途、沉积物形成时间及水深,将湖泊沉积物划分为原河道底部沉积物、新淹没底部沉积物以及新淹没边坡沉积物[16],采用紫外-可见光谱和三维荧光光谱表征湖泊典型区域沉积物孔隙水和上覆水中溶解性有机质DOM的特征,阐释沉积物/水界面处上覆水与孔隙水中DOM光谱特征的垂向变化,分析其中DOM的分布、来源以及组成特征,借以掌握湖泊水环境现状. 研究成果对湖泊水质保持、污染控制和治理修复等后续工作具有理论指导意义,为进一步揭示人工湖泊成湖过程中DOM的组成、来源及其对湖泊富营养化的影响机制提供科学依据.1 材料与方法1.1 研究区域概况图1 龙景湖采样点分布 Fig.1 Distribution of sampling sites in Lake Longjing 研究区域位于重庆市园博园龙景湖(图1)内. 龙景湖于2011年由大坝拦截蓄水形成,水库水位最高处达20~30 m,是典型的新建河道型深水水库. 龙景湖水面总面积约0.67 km2,大坝上游常水位标高306 m,死水位296 m,总库容663万m3,调节库容425万m3,换水周期约2.5年,水源补给主要是降雨径流. 为研究龙景湖沉积物上覆水和孔隙水中DOM的来源,分析成湖过程中污染物的来源及变化,根据蓄水前土地用途、沉积物形成时间及水深,将沉积物划分为原河道底部沉积物、新淹没区底部沉积物以及新淹没区边坡沉积物[16]. 原河道底部沉积物是龙景湖蓄水前就存在的河道,龙景湖闸坝拦截蓄水前未进行原河道清淤处理,原本存在一定深度的沉积物. 新淹没区底部沉积物是指蓄水前主要为植被和农地的水位较深的中间沉积物,新淹没区边坡沉积物是指蓄水前为裸露土壤和碎石表层的水位较浅的边缘区域沉积物,建设初期施工拦截蓄水时未进行清库工作,存在有机质的蓄积. 龙景湖建设后基本切断了除面源外的其他外源性污染源.1.2 样品采集与现场测定用沉积物柱状采样器(Corer 60,Uwitec,Austria)分别采集龙景湖新淹没区边坡(1#)、原河道底部(2#)和新淹没区底部(3#)的沉积物样品. 采样点使用全球定位系统(GPS)定位,具体位置如图1和表1所示. 采样时间为2015年9月20日,采样当日湖库及其上游无降雨. 现场用便携式多参数分析仪(HACH,HQ40d,USA)测定沉积物/水界面上方30 cm上覆水中的pH值、溶解氧(DO)、电导率(Eh)、温度(T)等指标(表1). 然后用橡胶塞密封柱样,竖直放置,运回实验室,24 h内完成样品预处理和各项指标的测定.表1 龙景湖各采样点基本水质参数Tab.1 Water quality parameters of each sample site in Lake Longjing采样点经纬度水深/mpHT/℃DO/(mg/L)电导率/(μS/cm)新淹没区边坡29°40′53″N,106°32′54″E10.46.6024.32.71439原河道底部29°41′00″N,106°33′00″E16.17.1521.61.14547新淹没区底部29°41′05″N,106°33′08″E7.08.0224.64.094031.3 样品预处理与测定为研究沉积物/水界面附近溶解性有机质的种类及分布,按照1 cm间隔分取沉积物/水界面上方1~5 cm的上覆水以及界面以下1~10 cm沉积物(由于3#采样点新淹没区底部沉积物较浅,采样分离得1~6 cm沉积物),将沉积物置于冷冻离心机(8000转/min,10 min)中离心,上清液即为沉积物孔隙水. 将上覆水和孔隙水用0.45 μm玻璃纤维滤膜(滤膜预先于马弗炉中450℃灼烧4 h)过滤,过滤水样于4℃暗处保存,用于溶解性有机碳(DOC)的测定和光谱分析. DOC测定采用总有机碳分析仪(Liqui TOCⅡ,Elementar,Germany),实验用水均为Milli-Q超纯水(Millipore,18.2 MΩ/cm).1.4 光谱扫描与数据分析紫外-可见光谱测定采用U-3010型紫外-可见分光光度计(HITACHI,Japan),于室温下采用1 cm石英比色皿,在波长200~700 nm(间隔为1 nm)下扫描.特定波长处的吸收系数aλ根据公式(1)计算:aλ=2.303Aλ/l(1)式中,aλ为波长为λ处的吸收系数(m-1),Aλ为波长为λ处的吸光度,l为光程差(m).三维荧光光谱测定采用F-7000型荧光分光光度计(HITACHI,Japan),使用150 W氙弧灯作激发光源,PMT电压为700 V. 荧光激发-发射光谱矩阵的激发波长(λEx)和发射波长(λEm)范围分别为200~450和250~600 nm. λEx与λEm的带通(Bandpass)分别为5和10 nm,激发和发射的间隔均为5 nm,扫描速度为1200 nm/min. 实验空白采用Milli-Q超纯水. 使用SigmaPlot 13.0软件进行三维荧光光谱图的绘制.2 结果与讨论2.1 DOM的紫外-可见吸收光谱特征通常,吸收光谱中波长大于230 nm的区域为不受无机物(如氯化物或溴化物等)干扰的有机物吸收区域,DOM的吸光度值随波长的增大而呈指数减小[17]. 由于天然水中DOM的发色基团众多,在光谱中难以区分,其紫外-可见光谱表现为谱型较宽、没有特征吸收峰,因此,自然水体的吸光度值仅作为溶解性有机碳(DOC)的半定量指标. 常用E2/E3、SUVA254和a260等一系列光谱特征参数和光谱吸收模型来获取DOM的各项信息[18]. 其中,E2/E3(a250/a365,即水样分别在250和365 nm处的吸收系数之比)反映了DOM的分子量大小、芳香性、腐殖化程度以及碳的来源. E2/E3值越大,表明DOM的分子量、芳香性和腐殖化程度越小. SUVA254(a254/DOC,单位为L/(mg·m)为水样在254 nm处的吸收系数与DOC值之比)亦可以反映DOM的芳香化和腐殖化程度[19],SUVA254值越大,DOM 的芳香化和腐殖化程度越高. a260为波长为260 nm处的吸收系数,可以表征DOM中疏水组分的比例,a260值越大,疏水组分比例越高[20]. 3个采样点沉积物上覆水及孔隙水中DOC及紫外-可见光谱参数(E2/E3、SUVA254和a260)的值如表2所示.表2 龙景湖沉积物上覆水和孔隙水的紫外-可见光谱特征参数Tab.2 UV-vis spectra characteristic parameters of overlying water and pore water from Lake Longjing sediments样品属性DOC/(mg/L)E2/E3SUVA254/(L/(mg·m))a260/m-1范围平均值范围平均值范围平均值范围平均值新淹没区边坡上覆水22.6~25.223.6±1.03.13~6.675.32±1.650.968~2.3701.400±0.65720.7~53.030.8±14.9孔隙水39.0~53.944.7±4.73.00~5.674.46±0.871.360~2.2901.720±0.27057.6~167.0106.0±43.9原河道底部上覆水23.2~24.824.3±0.74.29~5.204.82±0.440.560~1.3001.050±0.28713.4~32.225.5±7.1孔隙水42.3~84.360.3±14.72.56~6.004.05±1.030.683~2.2701.480±0.49597.9~248.0168.0±50.0新淹没区底部上覆水20.7~22.121.6±0.55.75~9.507.45±1.690.892~0.9900.971±0.09118.4~24.220.7±2.3孔隙水30.6~69.546.7±15.84.75~5.505.12±0.271.230~2.2301.740±0.37746.1~115.080.1±27.9从表2可以看出,同一采样点的上覆水E2/E3值均大于孔隙水的E2/E3值,而SUVA254值均小于孔隙水的SUVA254值,说明孔隙水中DOM的芳香性和腐殖化程度较高. 临近沉积物-水界面层次的上覆水的 SUVA254值与表层沉积物的孔隙水接近,说明界面处上覆水的有机质组成受表层沉积物的影响,或为采样及运输时晃动所致. 3个采样点上覆水的a260值显著小于孔隙水的(n=41,P<0. 05),表明孔隙水中疏水组分含量大于上覆水. 由于DOM中的疏水组分包含了几乎所有的芳香基,此结果与E2/E3以及SUVA254的结果一致. 有研究表明[18],富里酸(FA)的E2/E3值在4左右,而胡敏酸(HA)的E2/E3值低于富里酸,本研究可推测新淹没区边坡和原河道底部沉积物中DOM的富里酸/胡敏酸小于新淹没区底部. 腐殖化过程主要由微生物作用,最终将有机质转变为腐殖质,从而储存营养物质和能量. 石陶然等[21]采用平衡渗析法等技术研究了滇池表层沉积物中DOM的分子量分布特征,DOM腐殖化程度和芳香性随着分子量的增加而增大. 本研究发现孔隙水的腐殖化程度和芳香性明显高于上覆水,表明沉积物孔隙水中大分子量的DOM较多,沉积物中微生物对有机质的转化起到了重要作用,而界面上覆水中可能存在内源输入的低分子量DOM.2.2 DOM的荧光光谱特征DOM的来源可以通过两个荧光指数来表征,即荧光指数(FI, f450/f500)和生物源指数(BIX). DOM的FI定义为激发光波长为370 nm时,发射波长为450与500 nm时的光谱强度之比,用于腐殖质(尤其是富里酸)的来源评估[15].Battin[22]和McKnight等[23]利用f450/f500对具有复杂发色基团的DOM中腐殖质进行溯源,陆源DOM和生物来源DOM这两个端源的f450/f500分别为1.4和1.9,且受pH影响不大. FI>1.9时,DOM主要源于水体自身微生物活动,自生源特征明显;FI<1.4时,DOM以外源输入为主[24]. BIX定义为激发波长为310 nm,发射波长在380和430 nm时荧光强度的比值,用于评估样本中微生物来源的DOM的相对贡献率[15]. BIX值的增加伴随着β荧光团含量的增加,而β荧光团与新近产生的有机质有关[25]. BIX<0.6时,表示DOM中含有较少微生物来源的DOM;BIX值的范围为0.6~0.7时,DOM具有较少的自生组分;BIX 值的范围为0.7~0.8时,DOM具有中度新近自生源特征;BIX值在0.8~1.0之间时,DOM具有较强自生源特征;BIX>1.0时,DOM为生物或者细菌活动产生[15].龙景湖沉积物上覆水和孔隙水中DOM的FI范围为1.84~2.17,平均值为1.98±0.07,除新淹没区底部沉积物界面以上3~5 cm的上覆水中DOM的FI值略小于1.9外,其余水样的FI值均大于1.9(图2),这表明龙景湖上覆水和孔隙水中的DOM主要源于水体自身微生物活动,自生源特征明显. 新淹没区底部(龙景沟)汇水面积较大,汇水区地形呈V型峡谷状,在采样前期降雨中大量营养盐颗粒物和有机碎屑随地表径流经该处的雨、污水管携入[16],导致该区域上覆水的DOM 可能同时来自陆源和生物源,该点的沉积物DOM来源为生物源.图2 龙景湖沉积物上覆水和孔隙水的荧光指数、生物源指数的垂向分布特征Fig.2 Vertical profiles of FI and BIX of overlying water and pore water from Lake Longjing sediments除少数上覆水样点外,龙景湖3个样点上覆水和孔隙水DOM的BIX值大小顺序为原河道底部>新淹没区底部>新淹没区边坡. 上覆水中DOM的BIX值均大于1.对于孔隙水,原河道底部样点DOM的BIX值大于1,新淹没区边坡和新淹没区底部的孔隙水DOM的BIX值范围为0.9~1.0. 龙景湖沉积物-水界面上覆水的BIX值大于1,表明DOM主要由水体内部生物及细菌活动产生,同时可能存在新近释放到水体的有机质,孔隙水DOM的BIX数值也相对较高(均>0.9),对应了显著的自生源特征. 该分析结果与DOM的荧光指数所揭示的自生源特征的结果明显一致. 3个采样点上覆水DOM的BIX均大于孔隙水DOM,而原河道底部孔隙水DOM 的BIX值大于新淹没区边坡和新淹没区底部,表明原河道底部沉积物中的生物或细菌更活跃. 原河道底部沉积物-水界面以下0~3 cm的孔隙水的BIX值与上覆水差异不大,这可能是由于原河道采样点水深较深(达16.1 m),水体底部长期厌氧,沉积物-水界面附近均处于强还原环境,表层沉积物和上覆水体环境差异性较小. 综上所述,FI和BIX这2种荧光指数在龙景湖沉积物孔隙水中DOM的来源上具有良好的指示性,揭示了龙景湖沉积物上覆水和孔隙水中的DOM主要为生物源,具有较强的自生源特征.表3 龙景湖沉积物上覆水及孔隙水中DOM的主要荧光峰[23]Tab.3 Main fluorescence peaks of DOM in overlying water and pore water from Lake Longjing sediments谱峰名类型λEx(nm)/λEm(nm)C类富里酸荧光峰320~380/420~500A类富里酸荧光峰230~260/400~480TT1类色氨酸荧光峰270~280/334~360T2类色氨酸荧光峰220~235/334~360BB1类酪氨酸荧光峰270~280/304~310B2类酪氨酸荧光峰220~235/304~3102.3 DOM的三维荧光光谱由于荧光光谱性质分析中荧光指数等指标在荧光性质的定量分析上缺乏解析芳香族DOM异质性的能力,因此需要利用荧光激发-发射光谱矩阵来得到更多的荧光光谱信息,以进一步分析龙景湖沉积物上覆水及孔隙水中DOM的组成及来源. 通过荧光激发-发射光谱矩阵绘制的三维荧光光谱图,可以直观地发现不同来源的DOM因其含有不同的荧光基团,在图中显示为不同位置的荧光峰. 根据Chen等[26]的研究结果对三维荧光光谱图进行区域划分,龙景湖沉积物上覆水和孔隙水样共得到6种主要的荧光峰(表3). 荧光峰A、C属于类腐殖酸荧光,代表较难降解的DOM,被认为与腐殖质结构中的羰基和羧基有关,主要来自于陆源输入. 荧光峰C属于类腐殖酸,通常被临近的荧光峰(如T1峰)覆盖一部分,对其荧光中心的研究报道较少. 有研究将C峰归因于类腐殖有机物,由木质素和其他降解的植物的不同分子组成,是市政固体废物中C峰的潜在贡献者. T峰和B峰合称为类蛋白荧光峰,与微生物活动相关,可以通过外源进入湖泊或微生物活动产生[27]. B峰(包括两个不同峰位的B1峰和B2峰)代表的类酪氨酸物质,可以是自由分子或与氨基酸、蛋白质结合,而与T峰(包括两个不同峰位的T1和T2峰)相关的类色氨酸化合物,可以是自由分子或与蛋白质、杀虫剂、腐殖质结构相结合.3个采样点沉积物上覆水及孔隙水中DOM的三维荧光光谱如图3~5所示. 3个采样点所有水样均不同程度地出现A峰、B峰和T峰,且在较深层次孔隙水中不同程度地出现C峰.图3 新淹没区边坡沉积物上覆水及孔隙水中DOM的三维荧光光谱(其中,1-OW1~1-OW5为上覆水,1-PW1~1-PW10为孔隙水)Fig.3 Three-dimensional fluorescence spectra of DOM in overlying water and pore water from newly submerged sediment along the lakeside新淹没区边坡沉积物上覆水中显示4个类蛋白峰(B1、B2、T1和T2)和A峰(图3),其中B1峰和T2峰很明显,B2峰和T1峰向沉积物-水界面方向有增强趋势,上覆水中出现类腐殖酸峰(A峰),说明可能存在陆源有机质输入. 由于龙景湖在建湖时已经切断了除面源外的其他外源性污染源,故认为可能是地表径流、降雨等导致的陆源输入. 孔隙水中4个类蛋白峰、A峰和C峰都存在,表层孔隙水(0~5 cm)的B2峰和T2峰较深层孔隙水和界面上覆水更为明显,仅在深层孔隙水中存在C峰(6~10 cm). 在深层孔隙水中,A峰和C峰随深度的增加而变强,而B峰和T峰逐渐减弱. 根据荧光峰的分布及变化规律可知,新淹没区边坡沉积物上覆水和表层孔隙水中DOM以色氨酸和酪氨酸等芳香族类蛋白物质为主,且表层沉积物孔隙水中的类蛋白物质含量高于上覆水,深层孔隙水中含有大量的类腐殖质. 这是由于表层沉积物中有机质含量较高,微生物通过有氧或厌氧呼吸降解有机物并产生大量的可溶性副产物,成为上覆水DOM的来源之一. 结合成湖背景进行分析,新淹没边坡在成湖前属山林或农田土地,建湖后形成新淹没区,建湖初期并未对湖泊及其周围区域进行清库处理,边坡残留了原始植被和土壤,导致深层沉积物中腐殖质含量较高. 李昆等[28]在研究城市雨水管网沉积物中不同分子量DOM的空间分布时发现,腐殖类物质主要集中在大分子量(大于10 kDa)DOM区域且随分子量增大DOM腐殖化程度升高,小分子量(小于3 kDa)DOM主要是类蛋白物质,此结论与紫外-可见光谱特征指标E2/E3的认定一致. 综上,新淹没区边坡沉积物上覆水和表层孔隙水的DOM以小分子量类蛋白物质为主,深层孔隙水中含有大量的大分子类腐殖质,且随着深度的增加,腐殖化程度升高. 此结果与前文紫外-可见光谱分析结论中E2/E3、SUVA254、a260所揭示的结果一致.图4 原河道底部沉积物上覆水及孔隙水中DOM的三维荧光光谱(其中,2-OW1~2-OW5为上覆水,2-PW1~2-PW10为孔隙水)Fig.4 Three-dimensional fluorescence spectra of DOM in overlying water and pore water from original riverbed sediment如图4所示,和新淹没区边坡相似,原河道底部沉积物上覆水显示4个类蛋白峰和A峰,B1和T2峰较强,B2、T1和A峰较弱. 孔隙水中出现4个类蛋白峰、A 峰和C峰,表层孔隙水(1~5 cm)中荧光峰很集中,B峰和T峰较为突出,这表明类色氨酸和类酪氨酸物质是表层孔隙水DOM中的主要组分. 随着深度的进一步增加,孔隙水中T1峰减弱,A峰增强并在6~10 cm孔隙水中出现C峰,C峰的强度也有增强趋势. 与新淹没边坡相比,原河道深层孔隙水(6~10 cm)中B2和T2峰较强. 这可能是由于龙景湖蓄水前未进行原河道的清淤处理,该区域沉积物较厚且水深较深(16.1 m),深层沉积物的厌氧还原环境和充足的营养供给等条件,促使微生物活性较强,与微生物活性相关的B和T峰较强. 上述荧光光谱BIX指标也表明,原河道沉积物中的生物或细菌较新淹没区边坡和新淹没区底部更活跃. 因此,原河道底部沉积物上覆水和表层孔隙水的DOM以类蛋白物质为主,深层孔隙水中同时含有类蛋白物质和类腐殖质.图5 新淹没区底部沉积物上覆水及孔隙水中DOM的三维荧光光谱(其中,3-OW1~3-OW5为上覆水,3-PW1~3-PW6为孔隙水)Fig.5 Three-dimensional fluorescence spectra of DOM in overlying water and pore water from newly submerged bottom sediment新淹没区底部沉积物上覆水中主要显示B1、T2峰,界面上3~5 cm上覆水中不存在B2峰,B2、T1、T2和A峰向界面方向逐渐增强. 新淹没区底部沉积物孔隙水的三维荧光光谱荧光结构与上述样品的结构稍有不同,在3~4 cm孔隙水中就开始出现C峰,且随着深度的逐渐增强(图5). 这表明相比于新淹没区边坡和原河道底部,新淹没区边坡沉积物的孔隙水中类腐殖质含量最高,与前述紫外-可见光谱特征中各指标平均值表征结果相同. 再者,在沉积物/水界面附近(界面上2 cm上覆水和界面下2 cm孔隙水)B峰和T峰较弱,表明新淹没区底部沉积物-水界面附近微生物活性不强. 这可能是因为蓄水前新淹没底部主要为裸露土壤和碎石表层,加之该点水深相对较浅(7 m),致使表层沉积物微生物活性较弱.3 结论1)龙景湖沉积物孔隙水中DOM的芳香性和腐殖化程度高于上覆水,疏水组分在孔隙水中的相对含量高于上覆水,界面上覆水体中可能存在内源输入的低分子量DOM;新淹没边坡和原河道底部沉积物中富里酸/胡敏酸比值低于新淹没底部.2)龙景湖沉积物上覆水和孔隙水中的DOM主要源于水体自身生物或者细菌活动,具有较强的自生源特征且沉积物存在向上覆水释放有机质的潜力.3) 龙景湖新淹没区边坡沉积物上覆水和表层孔隙水中的DOM以小分子量类蛋白物质为主,深层孔隙水中含有大量的大分子类腐殖质,且随着深度的增加,腐殖化程度升高. 原河道底部沉积物上覆水和表层孔隙水的DOM以类蛋白物质为主,深层孔隙水中同时含有类蛋白物质和类腐殖质. 新淹没区底部沉积物上覆水DOM主要为类蛋白物质,接近沉积物-水界面的上覆水出现类腐殖质物质且浓度向界面方向逐渐升高,孔隙水DOM中类腐殖质含量较另外两个采样点更高. 以上荧光光谱特征与龙景湖的建湖背景有一定联系,此部分结论与紫外-可见光谱特征结论具有一致性.4 参考文献【相关文献】[1] Fu PQ, Wu FC, Liu CQ et al. Three-dimensional excitation emission matrix fluorescence spectroscopy of dissolved organic matter from Chinese highland lakes. Oceanologia et Limnologia Sinica, 2007, 38(6): 512-520. [傅平青, 吴丰昌, 刘丛强等. 高原湖泊溶解有机质的三维荧光光谱特性初步研究. 海洋与湖沼, 2007, 38(6): 512-520.][2] Birdwell JE, Engel AS. Characterization of dissolved organic matter in cave and spring waters using UV-Vis absorbance and fluorescence spectroscopy. Organic Geochemistry, 2010, 41(3): 270-280.[3] Yao X, Zhang Y, Zhu G et al. Resolving the variability of CDOM fluorescence to differentiate the sources and fate of DOM in Lake Taihu and its tributaries. Chemosphere, 2011, 82(2): 145-155.[4] Wang L, Wu FC, Zhang R et al. Characterization of dissolved organic matter fractions from Lake Hongfeng, Southwestern China Plateau. Journal of Environmental Sciences, 2009, 21(5): 581.[5] Leenheer JA, Nanny MA, Mcintyre C. Terpenoids as major precursors of dissolved organic matter in landfill leachates, surface water, and groundwater. Environmental Science and Technology, 2003, 37(11): 2323-2331.[6] Zhang Z, Yang DX, Wang B et al. Study on water environment characteristics of an incipient artificial lake. Chinese Journal of Environment Engineering, 2010, (6): 1321-1326. [张智, 杨冬雪, 王斌等. 某人工湖成库初期水环境特征研究. 环境工程学报, 2010, (6): 1321-1326.] [7] Ioriya T, Inoue S, Haga M et al. Change of chemical and biological water environment at a newly constructed reservoir. Water Science and Technology, 1998, 37(2): 187-194. [8] Wei H, Jung H, Lee JH et al. Differences in spectroscopic characteristics between dissolved and particulate organic matters in sediments: Insight into distribution behavior of sediment organic matter. Science of the Total Environment, 2016, 547: 1-8.[9] Shank GC, Zepp RG, Whitehead RF et al. Variations in the spectral properties of freshwater and estuarine CDOM caused by partitioning onto river and estuarine sediments. Estuarine Coastal and Shelf Science, 2005, 65(1/2):289-301.。

太阳诱导叶绿素荧光卫星遥感技术研究进展

太阳诱导叶绿素荧光卫星遥感技术研究进展

第43卷第2期航天返回与遥感2022年4月SPACECRAFT RECOVERY & REMOTE SENSING45太阳诱导叶绿素荧光卫星遥感技术研究进展仝迟鸣鲍云飞黄巧林王钰(北京空间机电研究所,北京100094)摘要陆地植被生态系统碳汇能力的定量评估对更好的理解全球碳循环,实现碳达峰、碳中和目标至关重要。

卫星反演的太阳诱导叶绿素荧光(SIF)作为一种快速、直接、非侵入性的植被光合性能指标应用日益广泛,为估算区域到全球尺度陆地植被生态系统的碳汇水平提供了一种新的光学手段。

文章首先回顾了用于卫星SIF反演的传感器及其反演SIF产品的特点;其次,综述了卫星SIF在陆地植被生态系统碳汇监测中的研究进展;最后,针对陆地碳循环遥感的应用需求,讨论分析了未来卫星SIF遥感发展的难点与重点。

文章对卫星SIF遥感在陆地植被生态系统碳汇监测中的应用分析,可为生态系统碳源/汇管理、气候预测和卫星研制提供一定参考。

关键词总初级生产力太阳诱导叶绿素荧光碳循环卫星遥感中图分类号: V19文献标志码: A 文章编号: 1009-8518(2022)02-0045-11DOI: 10.3969/j.issn.1009-8518.2022.02.005Progress on Solar-induced Chlorophyll Fluorescence of SatelliteRemote SensingTONG Chiming BAO Yunfei HUANG Qiaolin WANG Yu(Beijing Institute of Space Mechanics & Electricity, Beijing 100094, China)Abstract Quantifying terrestrial vegetation ecosystem carbon sink is essential for better understanding the global carbon cycle and achieving the goals of peak carbon dioxide emissions as well as carbon neutrality. Solar-induced chlorophyll fluorescence (SIF) is widely used as a rapid, direct and non-invasive indicator of the function and status of vegetation. Satellite SIF provides a new optical method for estimating carbon sink of terrestrial vegetation ecosystems at scales from regions to the globle. Firstly, we review the characteristics of satellite platforms/sensors for SIF retrieval and its products. Secondly, we present an overview of the application of satellite SIF in the terrestrial ecosystem carbon sink. At last, we discuss the challenges of satellite SIF remote sensing in terrestrial carbon cycle according to their needs. This comprehensive review on terrestrial vegetation ecosystem carbon monitoring of satellite SIF application can benefit carbon management, climate projections, and satellite design.Keywords gross primary production (GPP); solar-induced chlorophyll fluorescence (SIF); carbon cycle; satellite remote sensing收稿日期:2022-01-18基金项目:国际(地区)合作与交流项目(41611530544)引用格式:仝迟鸣, 鲍云飞, 黄巧林, 等. 太阳诱导叶绿素荧光卫星遥感技术研究进展[J]. 航天返回与遥感, 2022, 43(2): 45-55.TONG Chiming, BAO Yunfei, HUANG Qiaolin, et al. Progress on Solar-induced Chlorophyll Fluorescence of46航天返回与遥感2022年第43卷0 引言工业革命导致CO2、CH4等温室气体排放增加,气候变暖进程加快,将造成极端气象事件频发、冰川融化、海平面上升等灾害性后果。

拟南芥

拟南芥

The Conserved Splicing Factor SUA Controls Alternative Splicing of the Developmental Regulator ABI3in Arabidopsis W OAMatteo Sugliani,a Vittoria Brambilla,a Emile J.M.Clerkx,b,1Maarten Koornneef,a,b and Wim J.J.Soppe a,2a Department of Plant Breeding and Genetics,Max Planck Institute for Plant Breeding Research,50829Cologne,Germanyb Laboratory of Genetics,Wageningen University,6708PB Wageningen,The NetherlandsABSCISIC ACID INSENSITIVE3(ABI3)is a major regulator of seed maturation in Arabidopsis thaliana.We detected two ABI3 transcripts,ABI3-a and ABI3-b,which encode full-length and truncated proteins,respectively.Alternative splicing of ABI3is developmentally regulated,and the ABI3-b transcript accumulates at the end of seed maturation.The two ABI3transcripts differ by the presence of a cryptic intron in ABI3-a,which is spliced out in ABI3-b.The suppressor of abi3-5(sua)mutant consistently restores wild-type seed features in the frameshift mutant abi3-5but does not suppress other abi3mutant alleles.SUA is a conserved splicing factor,homologous to the human protein RBM5,and reduces splicing of the cryptic ABI3intron,leading to a decrease in ABI3-b transcript.In the abi3-5mutant,ABI3-b codes for a functional ABI3protein due to frameshift restoration.INTRODUCTIONSeeds are essential for the spread and survival of most plant species and constitute a major food source.Seed features like desiccation tolerance,dormancy,and the accumulation of stor-age proteins are established during seed maturation.In Arabi-dopsis thaliana,the phytohormone abscisic acid(ABA)controls seed maturation and dormancy by preventing germination and reserve mobilization.ABA signaling at this stage is concomitant with the expression of four major regulatory genes of seed maturation with partially redundant functions:LEAFY COTYLE-DON1(LEC1),LEC2,FUSCA3(FUS3),and ABSCISIC ACID INSENSITIVE3(ABI3)(Kroj et al.,2003;To et al.,2006).ABI3is a main component of the ABA signaling pathway and is highly conserved among plant species.The ABI3protein contains four functional domains(Giraudat et al.,1992;Suzuki et al.,1997). The A1domain is an acidic transcriptional activator(McCarty et al.,1991),and B1can interact with the seed-specific tran-scription factor ABI5(Nakamura et al.,2001).B2and B3are two basic DNA binding domains responsible for the ABA-dependent activation of seed maturation genes(Suzuki et al.,1997;Ezcurra et al.,2000;Nag et al.,2005).Several abi3mutant alleles were isolated in Arabidopsis.One of the most severe is abi3-5,which was originally identified by its stay-green seed phenotype.abi3-5seeds are insensitive to ABA during germination,are desiccation intolerant,and have reduced longevity,similar to other strong abi3alleles(Ooms et al.,1993).ABI3transcription is promoted by LEC1,LEC2,FUS3,ABI3(To et al.,2006),and ABA(Lopez-Molina et al.,2002).During germi-nation,ABI3is repressed by the chromatin remodeling factor PICKLE(Perruc et al.,2007)and the ABI3protein is targeted to 26S proteasome degradation by the ABI3-INTERACTING PRO-TEIN2(Zhang et al.,2005).The identification of several splice variants of ABI3homologs in monocotyledon and dicotyledon species(McKibbin et al.,2002;Fan et al.,2007;Gagete et al., 2009)implies that alternative splicing also has an important role in controlling ABI3expression.However,splicing variants of ABI3were not observed in Arabidopsis.Although alternative splicing of mRNA is an important com-ponent of posttranscriptional regulation in higher eukaryotes,its relevance and mechanisms in plants are poorly understood.In Arabidopsis,;42%of all transcripts from intron-containing genes are alternatively spliced(Filichkin et al.,2010).Alternative splicing can produce transcripts that encode for proteins with altered or lost function.Furthermore,it can lead to tissue-specific transcripts or affect mRNA stability and turnover via nonsense-mediated decay(McGlincy and Smith,2008).Splicing is directed by the spliceosome,a dynamic RNA-protein multicomponent machinery that is conserved among eukaryotes.In Arabidopsis, only a few splicing-related proteins have been characterized (Lopato et al.,1999;Ali et al.,2007;Tanabe et al.,2007;Zhang and Mount,2009),and the information on their biochemical function and their targets in relevant developmental and envi-ronmental contexts is limited.We identified SUPPRESSOR OF ABI3-5(SUA)as a novel plant splicing factor that influences seed maturation by controlling alternative splicing of ABI3.SUA is an evolutionary conserved protein that suppresses splicing of a cryptic ABI3intron.Splicing of this intron leads to a transcriptThe authors responsible for distribution of materials integral to thefindings presented in this article in accordance with the policy describedin the Instructions for Authors()are:Matteo Sugliani(sugliani@mpipz.mpg.de)and Wim J.J.Soppe(soppe@mpipz.mpg.de).1Current address:University of Applied Sciences,Hogeschool HAS DenBosch,5223DE,Hertogenbosch,The Netherlands.2Address correspondence to soppe@mpipz.mpg.de.W Online version contains Web-only data.OA Open Access articles can be viewed online without a subscription./cgi/doi/10.1105/tpc.110.074674The Plant Cell,Vol.22:1936–1946,June2010,ã2010American Society of Plant Biologiststhat encodes a truncated ABI3protein in the wild type but a functional protein in the abi3-5mutant background. RESULTSIsolation of the abi3-5sua-1Double MutantSeeds of the abi3-5glabra1(gl1)transparent testa5-1(tt5-1)triple mutant were mutagenized by g-irradiation to isolate mutants involved in ABI3signaling.The gl1and tt5-1mutations are located on both sides of the ABI3locus and were used as phenotypic markers to distinguish suppressor mutants from wild-type contaminants.A strong suppressor mutant of abi3-5 was identified in the M2generation and named suppressor of abi3-5(sua-1).The gl1-1and tt5-1mutations were removed from this line by backcrossing with its wild-type Landsberg erecta (L er)genetic background and subsequent selection for abi3-5 and sua-1in the progeny.Ripe abi3-5seeds are green due to the presence of chlorophyll,but abi3-5sua-1seeds are yellow-brown,similar to the wild type(Figure1A).In addition,abi3-5 seeds are nondormant and sensitive to desiccation,which causes reduced longevity.Seeds of abi3-5sua-1are also non-dormant,but their longevity is strongly improved and they still germinate nearly100%after10weeks of storage(Figure1B). Finally,abi3-5sua-1seeds show an increased sensitivity to ABA and cannot germinate on15m M ABA,whereas viable abi3-5mutant seeds show100%germination on30m M ABA (Figure1C).Identification of the SUA GeneInitial mapping indicated that the sua mutation is located on chromosome 3.Fine-mapping was performed using an F2 mapping population of;4000individuals derived from a cross between the abi3-5sua-1double mutant(in L er background)and Columbia(Col-0).The abi3-5sua-1double mutant was identified in this mapping population by its yellow-brown seed color trait in combination with the ability to germinate in the presence of5m m ABA.The location of the sua-1mutation was narrowed down to a region of64kb at the bottom of chromosome3between two markers located at20.056and20.120Mb.This region contains 17genes and did not show recombination in ourmappingFigure1.The sua Mutation Suppresses abi3-5Phenotypes.(A)Seeds of wild type(L er and Col-0),abi3-5(in L er background),abi3-5sua-1(in L er background),abi3-5sua-2(in L er/Col-0background)and abi3-5 sua-1PSUA:SUA:GFP#8(in L er background).(B)Germination of L er,abi3-5,and abi3-5sua-1seeds after different periods of dry storage.Harvested seeds were stored at208C and42%relative humidity.Percentages are means(6SE)of three biological replicates.(C)Germination of L er,abi3-5,abi3-5sua-1,abi3-5sua-2,and abi3-5sua-3seeds,imbibed at different ABA concentrations.Seeds were1week after-ripened and stratified4d.Percentages are means(6SE)of four biological replicates.(D)Germination of1-week-old abi3-5,abi3-5sua-1PSUA:SUA:GFP#8,and abi3-5sua-1PSUA:SUA:GFP#15seeds at different ABA concentrations. Percentages are means(6SE)of three biological replicates.(E)Germination of L er,sua-1,Col-0,and sua-2seeds,imbibed at different ABA concentrations.Seeds were6months after-ripened and4d stratified. Percentages are means(6SE)of four biological replicates.SUA Controls Alternative Splicing of ABI31937parison of sequenced candidate genes with sequences in The Arabidopsis Information Resource (Garcia-Hernandez et al.,2002)revealed a 47-bp deletion in the 15th exon of At3G54230in the abi3-5sua-1double mutant (Fig-ure 2A).The identity of At3G54230as the SUA gene was confirmed by complementation of the sua-1mutant in the abi3-5background.A construct containing the SUA cDNA,expressed from a 2711-bp putative SUA promoter and fused with a C-terminal green fluorescent protein (GFP )tag (PSUA:SUA:GFP ),was used to transform abi3-5sua-1plants.Two independent T2transform-ants,containing a single insertion event,both complemented sua-1and showed the abi3-5phenotype.One of these trans-formants,abi3-5sua-1PSUA:SUA:GFP #8,even showed an enhanced abi3-5phenotype,yielding seeds with a more intense green color and stronger ABA insensitivity (Figures 1A and 1D).Additional mutant alleles of SUA in the Col-0background (sua-2and sua-3)were obtained from the Salk insertion mutant collection and from the GABI-Kat collection.These lines contain T-DNA insertions in the fourth and the ninth intron and were named sua-2and sua-3,respectively (Figure 2A).Both alleles lack full-length SUA expression and were crossed with abi3-5.The double mutants abi3-5sua-2and abi3-5sua-3were selected in the resulting F2,and all of them showed suppression of the abi3-5phenotypes,similar to abi3-5sua-1(Figures 1A and 1C).The sua single mutants did not have any obvious visual phenotype.Detailed analysis revealed that sua-1seeds are more susceptible to ABA germination inhibition compared with wild-type L er .By contrast,sua-2seeds germinated better than wild-type Col-0in the presence of ABA (Figure 1E).SUA Encodes an RNA Binding Protein Located in the Nucleus and Expressed in All Plant TissuesSUA encodes a protein with a conserved domain architecture that suggests a function in RNA metabolism.SUA contains two RNA recognition motifs surrounding a Zinc finger domain,an octamer repeat domain,and a Gly-rich domain close to the carboxy end (Figure 2B).The Arabidopsis genome does not contain a second gene with this combination of domains.SUA homologs,however,can be found throughout the eukaryotic kingdom (Figure 2C).SUA has 45%sequence similarity with the human RNA Binding Motif Protein 5(RBM5),which was originally identified as a putative tumor suppressor gene that is part of a small gene family (Edamatsu et al.,2000).Publicly available microarray data (Zimmermann et al.,2004)show ubiquitous SUA expression in Arabidopsis ,with a moder-ate enrichment in seeds.Quantitative real-time RT-PCR analysis confirmed that the relative abundance of SUA transcripts is comparable in most Arabidopsis tissues,but highest in siliques toward the end of seed maturation (Figure 3A).The subcellular localization of the SUA protein was studied using the PSUA:SUA:GFP lines.A GFP signal was detected in the nucleus of vegeta-tive and reproductive tissues (Figure 3B).The SUA_GFP chimeric protein showed diverse patterns.Speckles of different size were observed in some nuclei,but fluorescence was diffuse and rather weak in others (Figure 3B).We did not observe a correlation between the SUA_GFP fluorescence pattern and tissue or de-velopmental stages.SUA Interacts with the Prespliceosomal Component U2AF 65RBM5,the human homolog of SUA,is a member of the prespliceosomal complex (Behzadnia et al.,2007)and interacts with U2AF 65in vivo (Bonnal et al.,2008).U2AF 65is the larger subunit of the conserved pre-mRNA splicing factor U2AF.It guides splice site selection during the formation of the spliceo-somal complex (Zamore et al.,1992;Sickmier et al.,2006).In a yeast two-hybrid GAL4assay,we detected interaction between SUA and Arabidopsis U2AF 65(BAH19725)(Domon et al.,1998;Figure 4A).To confirm the SUA-U2AF 65interaction in planta,we performed a fluorescence resonance energy transfer/fluo-rescence lifetime imaging (FRET/FLIM)assay.Arabidopsis leaf protoplasts were cotransfected with two vectors fortheFigure 2.Genetic Structure,Domain Organization,and Phylogenetic Relationships of SUA .(A)Schematic structure of the SUA gene.Triangles indicate the T-DNA insertion sites of sua-2and sua-3,and the dashed region represents the 47-bp deletion of the sua-1allele.UTRs are shown in white,exons in gray,and introns as thick lines.(B)Domain structure of the SUA protein.aa,amino acids;RRM,RNA recognition motif;Zn,zinc finger;OCRE,octamer repeat;G-p,Gly patch.(C)Phylogram of SUA and its closest related proteins.FCA is an RNA binding protein that was added to the tree to emphasize the similarity between SUA and its homologs in evolutionary distant species.Populus trichocarpa (Pt ),Vitis vinifera (Vv ),Oryza sativa (Os ),Physcomitrella patens (Pp ),Chlamydomonas reinhardtii (Cr ),Xenopus laevis (Xl ),Mus musculus (Mm ),and Homo sapiens (Hs ).Bootstrap values are shown when higher than 50.1938The Plant Celloverexpression of SUA_YFP (yellow fluorescent protein)and U2AF 65_CFP chimerical proteins.FRET/FLIM analysis of proto-plasts coexpressing SUA_YFP and U2AF 65_CFP (cyan fluores-cent protein)showed a significant reduction of the mean CFP fluorescence lifetime compared with those expressing the U2AF 65-CFP alone (Figures 4B to 4F),confirming interaction of both proteins in planta.The Suppression of abi3-5by sua-1Is Allele Specific The abi3-5mutant is one of the strongest abi3alleles,which all show reduced seed dormancy and decreased sensitivity to ABA during germination (Bies-Etheve et al.,1999).Seeds of the abi3-4and abi3-6mutants are nondormant,highly insensitive to ABA,and show reduced longevity and a high chlorophyll content similar to abi3-5.To study the suppression effect of the sua-1mutant on different abi3mutant alleles,double mutants were constructed.The ABA-insensitive abi3-4and abi3-6alleles,as well as the weak abi3-1and abi3-7alleles (Figure 5A),were combined with sua-1,sua-2,and sua-3.Surprisingly,none of these combinations showed any suppression phenotype,indicating that the suppres-sion of abi3-5by sua mutants is allele specific (Figure 5B).Detection of Functional ABI3Protein in the abi3-5sua-1Double MutantThe abi3-5mutation causes a frameshift leading to a premature stop codon after 34erroneous codons.The abi3-4mutant hasaFigure 3.SUA Is Expressed in All Tissues and Its Protein Is Localized in the Nucleus.(A)Quantitative real-time RT-PCR analysis of SUA expression in different tissues.SUA mRNA levels are normalized to ACTIN8mRNA levels.S6D,seedlings 6d after germination;R,roots;RL,rosette leaves;CL,cauline leaves;FB,flower buds;S10to S20,siliques 10,12,14,16,18,and 20d after pollination.Data are from two independent biological replicates.Error bars represent SE .(B)Confocal analysis of subcellular localization of SUA:GFP in develop-ing embryo tissue from transgenic abi3-5sua plants containing the PSUA:SUA:GFP construct.Three nuclei with different GFP patterns are shown.Bar =2mM.Figure 4.SUA Interacts with U2AF 65.(A)Interaction between SUA and U2AF 65detected with the yeast two-hybrid assay.Cotransformed yeast strains were grown on SD-L-W-H with 5mM 3AT.Snf1and Snf4are yeast proteins that strongly interact (Jiang and Carlson,1997).(B)to (E)Interaction between SUA and U2AF 65based on FRET mea-sured by FLIM.FLIM analysis of protoplasts transiently expressing U2AF 65-CFP ([B]and [C])and coexpressing U2AF 65-CFP and SUA-YFP ([D]and [E]).Intensity channel ([B]and [D])and false color code ([C]and [E]).The absence of interaction results in a long lifetime,visible as a dark-blue color.Interaction leads to a reduction in donor lifetime,visible as a shift toward orange.A representative protoplast nucleus is shown.(F)Average CFP fluorescence lifetime values for the FRET/FLIM analysis.N,number of nuclei analyzed.SUA Controls Alternative Splicing of ABI31939single nucleotide mutation that causes a stop codon at approx-imately the same position (Bies-Etheve et al.,1999;Figure 5A).Therefore,abi3-4and abi3-5produce ABI3transcripts that translate into truncated ABI3proteins with similar sizes.Never-theless,the phenotype of the abi3-5mutant is strongly sup-pressed by sua ,whereas that of abi3-4is not.To understand this discrepancy,we analyzed the ABI3protein in dry seeds of L er ,sua-1,abi3-4,abi3-5,and the double mutants abi3-4sua-1and abi3-5sua-1by immunoblotting.A specific antibody,targeted to the amino end of ABI3,was used for detection.The ABI3protein (720amino acids)migrates as a 116-kD polypeptide (Parcy et al.,1997).We detected two bands of approximately this size for the ABI3protein in L er and sua-1seeds.One of these two bands probably represents a modified version of ABI3.A truncated ABI3protein corresponding to a 428–amino acid polypeptide and migrating as a 70-kD band,was observed in the abi3-5mutant (Figure 6).A similar sized (416amino acids)highly abundant ABI3protein was found in abi3-4and abi3-4sua-1.The high abundance of the truncated ABI3protein in abi3-4seeds was previously observed by Parcy et al.(1997).In the abi3-5sua-1double mutant,two weak bands of comparable size to full-length ABI3were detected,along with the smaller truncated abi3-5mutant protein (Figure 6).The presence of full-length ABI3protein in abi3-5sua-1seeds was consistent with all the observed suppression phenotypes and predicts the pres-ence of an ABI3transcript with a restored reading frame that has lost the abi3-5premature stop codon.Identification of a Novel ABI3Splice VariantThe abi3-5transcripts were analyzed in detail by RT-PCR and sequencing.In the abi3-5sua-1double mutant,we identified,besides the expected full-length abi3-5transcript,an alterna-tively spliced novel abi3-5transcript that lacks a cryptic intron of 77nucleotides.This cryptic intron is located shortly downstream of the abi3-5mutation and includes the premature abi3-5stop codon (Figure 5C).The combination of the 1-bp abi3-5deletion and the removal of the 77-nucleotide cryptic intron results in a transcript that restores the reading frame of abi3-5after 21erroneous and 26deleted codons.We named this transcript abi3-5-b and named the transcript with the retained intron abi3-5-a .The translated abi3-5-b polypeptide (abi3-5-b )is predicted to be 694amino acids.This protein contains all four ABI3protein domains (Figure 6B),and the phenotype of the abi3-5sua-1seeds indicated that abi3-5-b largely retains the ABI3molecular functions (Figure 1).The ABI3-b transcript only encodes a functional protein in the abi3-5mutant background.In the wild type,it causes a frame-shift and codes for a truncated protein of 429amino acids.This predicted truncated polypeptide was immunodetected in the sua-1single mutant and also,at lower levels,in wild-type L er seed protein extracts.The wild-type ABI3-b protein migrates with a similar speed in the gel as the proteins encoded by abi3-4(a and b splicing forms)and abi3-5(a splicing form)mutants (Figure 6).In addition to the accumulation of the ABI3-b splice variant,the sua-1mutant also shows an overall increase in ABI3expression.The amount of ABI3-a transcript,coding for full-length ABI3,is higher in sua-1than in the wild type (Figure 7A).This could explain the increased ABA sensitivity of sua-1seeds.Instead,overall ABI3expression in sua-2seeds is similar to that in wild-type Col-0,but the portion of the transcript coding for full-length ABI3is reduced,resulting in a decrease of ABA sensitivity (Figure 1E).We tested the possibility that sua-1has again-of-functionFigure 5.sua Is an Allele-Specific Suppressor of the abi3-5Allele.(A)Schematic structure of the ABI3gene.The locations and nature of the abi3-1,abi3-4,abi3-5,abi3-6,and abi3-7mutations are indicated.UTRs are shown in white,exons in gray,and introns as thick lines.The box with diagonal stripes represents the cryptic intron.(B)Table showing the suppression of the abi3phenotype in different combinations of sua and abi3mutant alleles.A check mark indicates abi3suppression;the “x”indicates absence of abi3suppression.ND,not determined.(C)Sequence of the ABI3cryptic intron and surrounding region.The asterisk indicates the single base pair deleted in abi3-5,and the subsequent stop codon is underlined.The cryptic intron is shown in lowercase letters.1940The Plant Celleffect on ABI3expression by transforming the sua-1mutant allele,expressed from the endogenous SUA promoter,into the sua-2mutant.Indeed,the obtained transformants showed a higher ABI3expression than the sua-2mutant and had increased ABA sensitivity (see Supplemental Figure 1online).This indicates that sua-1is a gain-of-function mutant regarding ABI3expres-sion.ABI3Alternative Splicing Is Developmentally Regulated The relative abundance of ABI3-a and ABI3-b transcripts was quantified in wild-type seeds by real-time RT-PCR.Developing siliques 16d after pollination showed a very low abundance of ABI3-b transcript in L er and Col-0(1.5361.36%and 0.9560.83%,respectively,of the overall ABI3transcripts;Figure 7A).During progressive development of wild-type siliques,the ratiobetween both ABI3transcripts shifted toward ABI3-b .At 20d after pollination,the amount of ABI3-b exceeded that of ABI3-a (Figure 7B).The observed change in ratio between ABI3-a and ABI3-b transcripts during seed maturation indicates that alter-native splicing of ABI3is developmentally regulated.DISCUSSIONABI3Is Regulated by Alternative SplicingThe transcription factor ABI3regulates seed maturation and influences seed quality.The abundance of ABI3is tightly regu-lated at different levels.In addition to complex genetic interac-tions with LEC1,LEC2,and FUS3at the transcriptional level (To et al.,2006),ABI3expression is controlled posttranscriptionally.Alternative splicing of ABI3homologs in cereal species (Triticum aestivum and Oryza sativa )and dicots (Pisum sativum )(McKibbinFigure 6.Detection of Full-Length ABI3Protein in the abi3-5sua-1Double Mutant.(A)Immunoblot analysis of ABI3protein.Total protein was extracted from freshly harvested seeds and separated on a Tris-Gly SDS 4to 12%polyacrylamide gradient gel.The ABI3protein is identified as a double band of ;116kD in L er ,sua-1,and abi3-5sua-1.The truncated ABI3proteins (D ABI3)produced by abi3-4,abi3-5,and abi3-5sua-1and the novel splicing variant of ABI3are ;70kD.Asterisk indicates a nonspe-cific band that is used as loading control.Sizes of the molecular markers (in kilodaltons)are shown next to the blot.(B)Predicted ABI3protein isoforms.Gray boxes represent the con-served functional motifs of ABI3(from left to right:A1,B1,B2,and B3).Boxes with diagonal stripes represent erroneous amino acidsstretches.Figure 7.Quantification of ABI3Splicing Variants.Quantitative real-time RT-PCR analysis of ABI3-a (white)and ABI3-b (gray)expression in L er ,sua-1,abi3-5,abi3-5sua-1,Col-0,and sua-2(A)and in L er developing siliques 10to 20d after pollination (DAP)(B).For (A),mRNA was extracted from siliques 16d after pollination.ABI3mRNA levels are normalized to ACTIN8mRNA levels.Data are from two independent biological replicates.Error bars represent SE .SUA Controls Alternative Splicing of ABI31941et al.,2002;Fan et al.,2007;Gagete et al.,2009)generates multiple mis-spliced transcripts that often code for truncated polypeptides.This has been linked to reduced grain quality in rice and wheat(McKibbin et al.,2002;Fan et al.,2007).Here,we show that the ABI3gene of Arabidopsis is also regulated by alternative splicing.A77-bp cryptic ABI3intron is alternatively spliced,which leads to the occurrence of two transcripts.The ABI3-a transcript encodes a full-length ABI3protein,and the ABI3-b transcript encodes a truncated protein that contains two of the four functional domains.Splicing of the cryptic intron of ABI3is developmentally regulated,and ABI3-b accumulates only at the end of seed maturation.This probably contributes to a fast downregulation of full-length ABI3in ripe seeds,which is neces-sary to inhibit the seed maturation program in germinating seeds. Transcripts with a long39untranslated region(UTR)or with 39UTR-located introns can be detected and degraded by the nonsense-mediated decay machinery in plants(Kere´nyi et al., 2008).To distinguish a natural stop codon from a premature stop codon,nonsense-mediated decay requires a second signal that has not been identified yet in plants(van Hoof and Green,2006). The ABI3-b transcript contains a premature stop codon but probably lacks this second signal because it is not affected by nonsense-mediated decay.The protein encoded by the ABI3-b transcript contains the A1acidic transcriptional activation do-main and thefirst basic domain and might still mediate ABA signaling during late seed maturation.The prevalent model of splicing in Arabidopsis is intron defi-nition,in which intronic sequences are recognized by the spliceosomal complex.The features of a canonical plant intron are a consensus59splice site(AG/GU,where GU is the more conserved dinucleotide),a U-rich sequence,and a consensus 39splice site(CAG/G where AG is invariant)(Simpson and Filipowicz,1996;Lorkovic´et al.,2000).Arabidopsis exons con-tain on average29%U,while introns have on average42%U (Reddy,2007).It was shown that U-rich elements can function as splicing signals(Simpson et al.,2004),and short introns and introns with low AU content are more likely to be retained(Wang and Brendel,2006).The ABI3cryptic intron has sequence similarities with canonical plant introns,in particular with the consensus sequences at the two borders(Figure5C),but it has a U content of only29%,while the other ABI3introns have,on average,46%U.Because of that,the cryptic ABI3intron may not be easily recognized by the spliceosomal complex.SUA Controls Alternative Splicing of ABI3SUA suppresses splicing of the cryptic ABI3intron and thereby influences the ratio between the ABI3-a and ABI3-b transcripts. Reduced suppression of the cryptic intron in the sua mutant leads to an increased amount of ABI3-b transcript and de-creased levels of the ABI3-a transcript.However,a substantial amount of ABI3-a transcript could still be detected in the sua mutant.Other splicing factors probably act redundantly with SUA in the suppression of the cryptic ABI3intron.Alternative splicing in plants is regulated by tissue-specific developmental cues and stresses and might provide a means for optimal adaptation to the environment(Ali and Reddy,2008). Alternative splicing of ABI3could also be regulated by specific environmental conditions.In this respect,it is interesting to note that publicly available microarray data show an upregulation of SUA expression by senescence(Zimmermann et al.,2004).The water content of seeds strongly decreases during the maturation phase until;7%in mature seed(Baud et al.,2002).This process is comparable to senescence and also coincides with increased SUA mRNA levels(Figure3A).Higher SUA abundance will favor cryptic intron retention and increase the full-length ABI3protein levels during seed maturation.Consistent with that,our exper-iments showed a correlation between increased levels of SUA transcript and a reduction in ABI3-b levels in transgenic plants. The abi3-5sua-1PSUA:SUA:GFP#8line,for instance,showed increased levels of SUA transcript and reduced amounts of abi3-5-b,resulting in an enhanced abi3-5phenotype(see Supple-mental Figure2online;Figures1A and1D).SUA-mediated alternative splicing of ABI3could represent a system tofine-tune seed maturation.However,in wild-type plants,the ABI3-b transcript accumulates at the end of seed maturation when SUA is still substantially expressed.Possibly,the SUA protein is not active or degraded at the end of seed maturation.Alternatively, other factors could counteract the role of SUA in retention of the cryptic intron at this time.The sua-1single mutant showed increased ABA sensitivity during germination.This is probably caused by upregulation of ABI3expression,which does not occur in sua-2.This difference between sua-1(in a L er background)and sua-2(in a Col-0 background)could be explained by natural genetic variation between L er and Col-0that modifies the sua mutant phenotype. However,sua-2plants transformed with sua-1also showed an increased ABI3expression and enhanced ABA sensitivity. Therefore,it is more likely that sua-1is a gain-of-function allele, which is translated into a truncated protein.This predicted polypeptide includes the RNA recognition motifs and the Zn finger motif but lacks the G patch domain at the C terminus.The nonfunctional mutant sua-1protein might compete for sub-strates with other proteins of the mRNA splicing machinery and could therefore function as a dominant-negative allele.The abi3-5mutant still contains a small amount of abi3-5-b transcript,which encodes a functional ABI3protein.Conse-quently,abi3-5is not a complete loss-of-function mutant.The sua mutant can suppress abi3-5because it enhances the amount of abi3-5-b transcript.SUA Has a Conserved Role in SplicingThe conserved domain architecture of SUA and its role in the suppression of the cryptic ABI3intron indicate a function in mRNA processing.Moreover,the speckledfluorescence pat-terns observed in nuclei expressing the chimeric SUA:GFP gene are similar to those obtained with Ser/Arg-rich GFP proteins, which are involved in RNA metabolism in plants(Lorkovic´and Barta,2004).The SUA protein has two RNA recognition motifs, which are also found in many eukaryotic RNA processing pro-teins(Burd and Dreyfuss,1994).Based on its functional motifs, SUA could bind directly to specific RNA targets.However,SUA might also interact with the mRNA targets indirectly and be part of the spliceosome,which is composed of;300proteins in Arabidopsis(Reddy,2007).1942The Plant Cell。

放射状双pn结抑制片上电感衬底损耗(英文)

放射状双pn结抑制片上电感衬底损耗(英文)

第26卷 第7期2005年7月半 导 体 学 报CHIN ESE J OURNAL OF SEMICONDUCTORSVol.26 No.7J uly ,20053Project supported by t he Shanghai Science &Technology Committee (No.037062019)and t he Shanghai Applied Material Founds (No.0425) Jian Hongyan male ,PhD candidate.His interested research directions include on 2chip inductor and antenna optimization ,RF circuit s designsuch as LNA ,mixer ,VCO ,and Antenna design for RFID.Email :hyjian @ Received 9December 2004,revised manuscript received 24J anuary 2005Ζ2005Chinese Institute of ElectronicsPatterned Du al pn Junctions R estraining Substrate Lossof an On 2Chip Inductor 3Jian Hongyan ,Tang J ue ,Tang Zhangwen ,He Jie ,and Min Hao(S tate Key L aboratory of A S I C &S ystem ,Fudan Universit y ,S hanghai 200433,China )Abstract :Dual pn junctions in lateral and vertical directions are formed by diff using the p +on the patterned n 2well in standard CMOS technology ,which are inserted under the inductor in order to reduce the currents in the substrate induced by the electromagnetic field f rom the inductor.The thickness of high resistance is not equivalent to the width of the depletion region of the vertical pn junctions ,but the depth of the bottom pn junction in the substrate are both proposed and validated.For the first time ,through the grounded p +2diff usion layer shielding the substrate f rom the electric field of the inductor ,the width of the depletion regions of the lateral and vertical pn junctions are changed by increasing the voltage applied to the n 2wells.The quality factor is improved or reduced with the thickness of high re 2sistance by 19%.This phenomenon validates the theory that the pn junction substrate isolation can reduce the loss caused by the currents in the substrate induced by the electromagnetic field f rom the inductor.K ey w ords :on 2chip inductor ;patterned dual pn junctions ;eddy current ;substrate loss EEACC :2140;2530B ;2550FC LC number :TM55 Document code :A Article ID :025324177(2005)07213282061 IntroductionMonolit hic inductors are important compo 2nent s in highly integrated radio f requency circuit s for wireless communication systems such as a low 2noise amplifier ,a voltage 2cont rolled oscillator ,and an impedance matching network.However ,on 2chip inductors have a low quality factor (Q )due to met 2al ohmic lo ss and conductive silicon subst rate lo ss.Many researchers have found several met hods to improve t he Q of o n 2chip inductor [1].The use of a patterned ground shield (P GS )[2]between t he inductor metal t race and subst rate in 2creases Q by reducing t he loss of elect ric energy due to t he current induced in a silicon subst rate ,while at t he same time not reducing t he eddy cur 2rent ,which can significantly reduce Q .Increasingt he resistance of t he subst rate [3,4]can reduce t heeddy current s in t he substrate and increase Q .These met hods are not standard technology.The inductor designers aim at realizing a substantially greater quality factor at circuit operation f requency wit hout altering t he fabrication process ,t hrough such met hods as using a symmet ric inductor t hat is excited differentially [5].Several papers [6~8]have re 2ported t he singe p n junction subst rate isolation ,however ,dual p n junction substrate isolation st ruc 2t ures wit hout altering t he fabrication p rocess have not been reported and t he reasons t his struct ure can reduce t he subst rate loss have not been reliably validated by tape 2out experiment s.The eddy cur 2rent would be formed in an n 2well t hat is designed as a whole layer [6],which is larger t han t he sub 2strate because t he resistance of t he n 2well is less t han t hat of t he subst rate.第7期Jian Hongyan et al.: Patterned Dual pn J unctions Restraining Substrate Loss of …The Q improvement app roach reported in t his paper is an implementation of t he patterned dual p n junctions subst rate isolation st ruct ures (J SIS )un 2derneat h spiral inductors by increasing t he effective resistance of t he subst rate.Reducing subst rate los 2ses due to J SIS are reliably validated.2 On 2chip inductorSeveral planar inductor st ruct ures are possi 2ble ,including loop ,meander ,and spiral ,t ho ugh spi 2rals are p referred because of t heir large po sitive mut ual inductance.Vertically stacked inductors are also compatible wit h t he IC interconnect scheme.211 Loss mechanism of eddy currents in siliconsubstrate The magnetic field of t he inductor is vertical to t he semiconductor silicon subst rate ,t hereforet he eddy current (EC )is formed in t he substrate as shown in Fig.1.The ohmic lo ss is induced by t he EC emitting heat energy.The inductance is reduced because t he directio n of t he magnetic field induced by t he EC is reverse to t hat f rom t he inductor.Se 2ries resistance of t he inductor is increased duetoFig.1 Schematic of loss mechanism of magnetic ener 2gy due to current induced in a silicon substratet he t ransformer effect between t he inductor and t he subst rate.Therefore ,t he Q will be reduced by t he EC in t he substrate.212 Q and f SRIf an inductor is modeled by a simple parallel RL C tank ,it can be shown as [2]Q =2πpeak magnetic energy 2peak elect ric energyenergy loss in one oscillation cycle(1) The self 2resonant frequency f SR can be defined as t he f requency when Q drop s to zero.f SR =(2πL eq C eq )-1(2)where L eq and C eq represent t he series inductance and t he total equivalent capacitance of t he induc 2tor ,respectively.3 pn junctions substrate isolationThe subst rate lo ss is primarily caused by t he eddy current ,which is induced by magnetic cou 2pling to t he subst rate.To prevent t he occurrence of such an energy loss mechanism ,a patterned dual p n junctio ns st ruct ure inserted above or in t he sub 2strates is proposed.The objective of t he struct ure is to interrupt t he flowing pat h of t he eddy cur 2rent ,t hus reducing energy loss.311 Du al pn junctions substrate isolationFor single well technology ,t he dual p n junc 2tions (p +np )can be formed by diff using p +on t he patterned n 2well ,as shown in Fig.2.The depletion region would be formed at t he interface between t he p +diff usion and n 2well ,which decreases t henon 2depleted widt h of t he n 2wells and reduces t he eddy current int he n 2wells.Fig.2 Cross section (a )and planform (b )of the dual pn junctions substrate isolation9231半 导 体 学 报第26卷312 Depletion regions isolationFigures2(a)and(b)are t he cross section andplanform of t he dual p n junctions substrate isola2tion,respectively.The resistance of t he p+2diff u2sion or well is less t han t hat of t he subst rate.Thep n junction must be made like a metal groundshielding,again in order to p rotest t he eddy cur2rent.Thus,t he t hickness of high resistance(T HR)is equivalent to t he dept h of t he bottom p n junctionin t he substrate,as shown in Fig.2(a).Therefore,t he CMOS technology wit h a deep2well is a betterchoice for a high performance inductor wit h J SIS.Capacitive coupling subst rate current(CCSC)andeddy current(EC)in t he subst rate are t he result sof high f requency effect s and concent rate on t hetop of subst rate.It is found t hat90%of magneticenergy is dissipated wit hin a dept h of10μm belowt he subst rate surface[8].Thus,depletion layers re2duce t he CCSC and EC,subst rate lo sses are re2duced,and t he Q factor of t he inductor is im2p roved.Wit h an app roximation of abrupt junction,t hecorresponding depletion widt h(W di)is given byW di=2εSi(N A+N D)qN A N DV R+<bi(3)where N A,N D(atoms/cm3)are t he doping densi2ties in t he p2type material and n2type material,re2spectively,εsi is t he permittivity of t he silicon,<bi ist he built2in potential of p n junction,and V R is t hereverse bias across t he junction.The depletion widt h will increase wit h reversebias acro ss t he junction.313 Lumped2elements modelsFigure3is t he lumped2element s model of atwo2port on2chip inductor for floating patterneddual p n junctions isolation and patterned groundshielding st ruct ures.At t he series branch of t heπ2network,model parameters L S,R S,and C S rep re2sent t he series inductance,series resistance,and in2ter2t urn fringing capacitance of t he inductor,re2spectively.The model parameter C m s represent scoupling2capacitance between t he suspended induc2tor body and t he subst rate(where C ox is t he capac2itance of t he oxide layer and C j is t he capacitance oft he p n junction).C sub and R sub rep resent t he capaci2tance and resistance of t he substrate,respectively.R PGS represent s t he resistance of t he patternedground2shielding layer in parallel wit h t he sub2strate.Fig.3 L umped2elements model of a two2port on2chip inductor for floating patterned dual pn junctions isolation(a) and for patterned ground shielding structures(b)4 Experiment and discussionInductors are fabricated in a0135μm two2poly four2metal CMOS p rocesses,as shown in Fig.4. The p rototype chip s also include t he de2embed lay2out s to calibrate t he on2wafer testing wiring and pads[10].On2wafer measurement of inductors is conducted using a network analyzer and cascade microtech probe station wit h coplanar ground2sig2 nal2ground(GSG)probes.The die p hoto and layout of t he p np subst rate0331第7期Jian Hongyan et al.: Patterned Dual pn J unctions Restraining Substrate Loss of…Fig.4 Die photos of the inductors in 0135μm CMOS processes (a )and one inductor with probes (b )isolation struct ure are shown in Fig.5.The spacebetween t he adjacent n 2well slot s is 111μm ,which is t he minimum space t hat design rule check per 2mit s under a 313V source voltage.The p 2subst rate and p +diff usion layer are connected wit h t he ground while t he n 2well is connected wit h t he bias voltage (V R ).Thus ,t he elect ric fields of t he induc 2tor are terminated at t he p +diff usion layer and t he p n junction capacitor does not have an effect on t heparasitical capacitance and f SR of t he inductor (in order to validate t he reduced eddy current due to J SIS ).Ohmic loss from t he eddy current s is o nly substrate lo ss.A lumped 2element s model of a two 2port on 2chip inductor wit h a grounded p +shielding layer is shown in Fig.3(b ).Fig.5 A single 2end spiral inductor with pnp isolation structureQuality factors and t he self 2resonant frequency of t he inductor wit h n 2well voltages are shown in Fig.6.Increasing t he voltage applied to t he n 2wells increases t he depletion region laterally between t hem and vertically beneat h t hem.Wit h rising T HR ,t he subst rate eddy current s are reduced ;t herefore ,L s is increased and R s is decreased ,as shown in Fig.7.Thus ,t he maximum quality factor is increased wit h V R f rom 0V to 3V by a f urt her 19%.The frequency of t he maximum Q (f MQ )andf SR of t he inductor are reduced because t he reducedquantity of t he inductance due to eddy current s is decreased.From 4V V R t he depletion regions of two neighbor n 2wells touch.The lateral p n junction dies away at 7V V R and t he T HR is not only t hedept h of t he bottom p n junction in t he substrate ,but also t he relatively t hinner t hickness of t he de 2pletion of t he vertical p n junction.Thus ,increasingV R from 3V to 7V decreases t he maximum qualityfactor by a f urt her 19%and t he f MQ and f SR of t he inductor are increased because t he reduced quantity of t he inductance due to eddy current s are in 2creased.This p henomenon validates t he t heory t hat t he J SIS can lower t he loss induced by t he eddy current s in t he subst rate.The capacitive coupling subst rate current and eddy current in t he subst rate are t he result s of high f requency effect s and con 2centrate on t he top of t he subst rate.This result can be safely extended to obtain t he conclusion t hat t he J SIS can also reduce t he loss caused by t he capaci 2tive coupling current s in t he substrate.Fig.6 Quality factors of the inductor with n 2well dis 2tance 111μm and at n 2well different bias voltages 5 ConclusionThe subst rate magnetic losses of t he CMOS inductor are analyzed in detail and new subst rate i 21331半 导 体 学 报第26卷Fig.7 L S and R S of the single2end spiral inductor with PN P isolation structure solation st ruct ures for inductors consisting of alter2nating patterned dual p n junctions wit h voltage cont rolled,variable lateral and vertical depletion regions are p resented.The st ruct ure covers t he whole area underneat h an inductor and is compati2 ble wit h standard digital CMOS process flow.The T HR is not equivalent to t he t hickness of t he de2 pletion regions of t he vertical p n junction but t he dept h of t he bottom p n junction in t he subst rate. Applying a voltage to t he struct ure alters depletion regions and t he number of free carriers underneat h t he inductor.The T HR is t hus increased.The eddy current in t he subst rate is reduced by t he depletion of t he p n junction.Therefore,t he inductance is in2 creased because t he reduced quantity of t he induct2 ance due to eddy current s is decreased.For t he first time,p n junction subst rate isolation t hat can re2 duce t he subst rate loss caused by t he eddy current s is reliably validated.The maximum quality factor is increased by19%,which validates t he t heory t hat t he p n junction isolation substrates can reduce t he substrate loss caused by t he eddy current s and ca2 pacitive coupling current s in t he subst rate.Dual p n junctions substrate isolation st ruct ure and deep2 well technology are better choices for a high per2 formance inductor wit h J SIS.U sing a ground p+ diff usion layer and patterned dual p n junction wit h cont rolled voltage,t he elect ric energy lo ss and magnetic energy loss in t he subst rate can be re2 duced.Acknow ledgments The aut hors would like to t hank Prof.Sun Lingling,Wen Jincai,Chen Zhanfei of t he Hangzhou University of Elect ronic Science &Technology and Prof.Li Fuxiao of t he Nanjing 55t h Research Instit ute of Information Indust rial Depart ment for measurement s.R eferences[1] Burghartz J N,Rejaei B.On t he design of RF spiral inductorson silicon.IEEE Trans Electron Devices,2003,50(3):718 [2] Yue C P,Wong S S.On2chip spiral inductors wit h patternedground shields for SI2based RF ICs.IEEE J Solid2State Cir2cuit s,1998,33(5):734[3] Y oon J B,K im B I,Choi Y S,et al.32D construction of mono2lit hic passive component s for RF and microwave ICs usingt hick2metal surface micromachining technology.IEEE TransMicrow Theory Tech,2003,51(1):279[4] Chen T S,Deng J D S,Lee C Y,et al.Improved performanceof Si2based spiral inductors.IEEE Microwave and WirelessComponent s Letters,2004,14(10):466[5] Danesh M,Long J R.Differentially driven symmetric micros2trip inductors.IEEE Trans Microw Theory Tech,2002,50(1):332[6] K im K ihong O K.Characteristics of an integrated spiral in2ductor wit h an underlying n2well.IEEE Trans Electron De2vices,1997,44:1565[7] Maget J,Kraus R,Tiebout M.Voltage2cont rolled subst ratestructure for integrated inductors in standard digital CMOStechnologies.ESSDERC,Session D15:New Device Concept s,2002[8] Liu Chang,Chen Xueliang,Yan Jinlong.Substrate pn junction2331第7期Jian Hongyan et al.: Patterned Dual pn J unctions Restraining Substrate Loss of…isolation for RF integrated inductors on silicon.Chinese Jour2nal of Semiconductors,2001,22(12):1486[9] Chang C A,Tseng S P,Y i J C,et al.Characterization of spiralinductors wit h patterned floating structures.IEEE Trans Mi2crow Theory Techn,2004,52(5):1375[10] Maget J.PhD Dissertation.University of Bundeswehr,Neu2biberg,Germany,2002放射状双pn结抑制片上电感衬底损耗3菅洪彦 唐 珏 唐长文 何 捷 闵 昊(复旦大学专用集成电路与系统国家重点实验室,上海 200433)摘要:使用标准CMOS工艺,在放射状的n阱上面扩散p+,使垂直和水平方向形成双pn结,将此结放在电感的底部用来抑制衬底损耗.提出并实验证明了该结构形成的高阻区厚度不是垂直pn结耗尽层的厚度,而是最低层的pn 结的深度.首次通过接地的p+扩散层屏蔽电感到衬底电场,水平和垂直pn结耗尽层厚度随着pn结反向偏压升高改变衬底有效的高阻区厚度,电感品质因数跟随高阻区厚度升降,有效地证明了pn结衬底隔离可以降低电感的衬底电流造成的损耗.关键词:片上电感;放射状双pn结;涡流;衬底损耗EEACC:2140;2530B;2550F中图分类号:TM55 文献标识码:A 文章编号:025324177(2005)07213282063上海市科委(批准号:037062019)及上海应用材料研究生发展基金(批准号:0425)资助项目 菅洪彦 男,博士研究生,研究方向包括片上电感和片上天线的优化设计,射频电路设计,例如低噪声放大器、混频器和压控振荡器等以及射频识别天线设计.Email:hyjian@ 2004212209收到,2005201224定稿Ζ2005中国电子学会3331。

凡纳滨对虾肌球蛋白轻链基因MLC的克隆及表达分析

凡纳滨对虾肌球蛋白轻链基因MLC的克隆及表达分析
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具有增加的胁迫耐受性和产量的转基因植物[发明专利]

具有增加的胁迫耐受性和产量的转基因植物[发明专利]

专利名称:具有增加的胁迫耐受性和产量的转基因植物
专利类型:发明专利
发明人:A·舍利,R·萨里亚-米兰,P·普齐奥,A·沙尔多南,陈若英申请号:CN200880024564.1
申请日:20080711
公开号:CN101743314A
公开日:
20100616
专利内容由知识产权出版社提供
摘要:本发明公开了下述多核苷酸,其能增强经转化以含有此类多核苷酸的植物在水受限条件下的生长、产量和/或增加的对环境胁迫的耐受性。

本发明还提供了使用此类多核苷酸的方法和含有此类多核苷酸作为转基因的转基因植物和农业产品,包括种子。

申请人:巴斯夫植物科学有限公司
地址:德国路德维希港
国籍:DE
代理机构:北京市中咨律师事务所
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StudyofRamanSpec...

StudyofRamanSpec...

Abstract — Nano-crystalline Diamond like Carbon (DLC) film has been grown by Dense Plasma Focusing Method (DPF) using pure graphite Plasma, on different substrate (glass/silica) at different substrate temperature. The films were grown at substrate temperature 1000C, 1500C & 3000C by the high denseplasma of energy 1.3 k Joule on glass and silica. Raman spectraconfirmed that sp 3 content in grown in the films under variousconditions. The Raman spectra of these films show a broad asymmetric peak which narrow with decreasing sp 2 contents. We believe that our data presented here may be used as reference of DLC characterization .Index Terms — Raman Spectra, Substrate Temperature,DLC characterization etc.I. I NTRODUCTIONCarbon is a versatile element that is found both allotropic forms in amorphous and crystalline state. Pure diamond (sp 3) and graphite (sp 2) are example of carbon state. Amorphous carbon is usually mixture of carbon atoms with sp 3, sp 2 and even sp 1 bonding. An amorphous carbon with high fraction of diamond-like (sp 3) bond is known as diamond like carbon (DLC). The term DLC was first used by Aisenberg and Chabot [1]. These films have aroused a considerable interest as coating material due to their attractive properties that are similar to diamond. DLC films can be deposited at low temperatures. Various methods have been developed for deposition of DLC films [2-10]. DLC films have a large number of applications such as wear-protective and antireflective coating for tri-biological tools, engine parts, razor blades and sunglasses, biomedical coatings and micro-electromechanical system. DLC films mainly consist of combination of four-foldcoordinated sp 3sites, as in diamond, and the three-fold coordinated sp 2 sites, as in graphite. The deposition methodManuscript received Monday, July 27, 2009.Vikram S Yadav, Ph.D. is Reader in Applied Physics, with the Department of Applied Sciences, Bundelkhand Institute of Engineering and Technology, Jhansi, INDIA. 284128. (corresponding author to provide phone:+91-9415030412; fax: +91-510-2320349; e-mail:****************************).Devendra K Sahu, Ph.D , is with Department of Basic Sciences, Bundelkhand University, Jhansi, INDIA. 284128. (e-mail: **********************.in).Manveer Singh and Kuldeep Kumar are with Department of Physics &Electronics, S.G.T.B. Khalsa College, University of Delhi, New Delhi-110007, INDIAand growth condition determine the amount of sp 3 and sp 2content in the film using Raman spectroscopy, as Raman spectroscopy is a non-destructive and fast for characterizing the carbon materials [11]. For visible excitation, Raman spectra for carbon show ‘G’ (1560cm -1), ‘D’ (1360cm -1), and for UV excitations ‘T’ (1060cm -1) peak in the 800-2000 cm -1region [12-16]. The G peak is due to the bond stretching of all pairs of sp 2 atoms in both rings and chains. The D peak is due to the breathing modes of sp 2atoms in rings [17-20] The T peak is due to the C-C sp 3vibrations [15-17]. In the presentpaper we studied temperature dependent properties of Nano-crystalline DLC. II EXPERIMENTAL DETAILS A DPF is the plasma machine that produces, short-livedplasma, which is so hot and dense that it becomes a copiousmulti-radiation source. A Mather type plasma focus device,energized by a 9 μf, 18 kV discharged capacitor with used storage energy of 1.3 kJ was used coating Diamond like Carbon (DLC) on the silicon and quartz substrates. The schematic arrangement of the experimental setup along with the focus sub system is given in fig 2.1. The focus sub system is a coaxial electrode assembly with a tapered anode at the centre surrounded by a cathode comprising six equidistance systematic rods. The copper anode having an effective length of 105 mm is inserted with 8 mm deep pure graphite disc at the top. A high voltage power supply is used to charge the capacitor bank and a pressurized spark gap is used as a fast switching device for discharge the capacitor through electrodes inside the monitored using a high voltage focus chamber. The chamber is evacuated up to 1x10-3 mbar pressure by a rotary pump before admitting insert gas. The high probe is a simple resistance divider, with a responsetime of about 15ns and is connected across the anode and cathode header. A high intensity spike in the voltage probe signal, as observed on the oscilloscope, indicate good focusing in this way an optimum value of working gaspressure is selected and is fixed for the rest of the experiment. The substrates used in this experiment are quartz cut with dimensions of 10x10x0.5 mm. The substrates are mounted at different axial and angular position above the anode tip on a specially designed holder which is coved by the shutter. A set of three samples is placed at fixed axial position of 8 cm from the anode tip and varying angle of 40, 80 and 120 with respect to the anode axis. The shutter is used to avoid the substrate sample from week focus shots at the beginning of the experiment. Plasma focus operation is based on the pulsed Study of Raman Spectra of Nano-crystallineDiamond Like Carbon (DLC) filmsComposition (sp 2:sp 3) with SubstrateTemperatureVikram S Yadav Member IAENG , Devendra K Sahu, Manveer Singh , Kuldeep Kumarelectrical discharged through gas contained between the co-axial electrode separated with a glass insulator sleeve. High voltage applied to the electrodes emerged in a low pressure gas causes an electrical breakdown along the insulator sleeve. First rise of the current leads to the formation of the plasma sheath. This is driven by self generated force, moves across the axis of electrodes towards the open end. After reaching the central electrode edge the sheath collapse toward the axis forming a dense (1020 cm -3) and hot (1-2 kV) elongated plasma structure called “pinch". These abrupt changes induced high electric field which is associated with a magnetic field, drives the ions axial away from the central anode and electrons toward the anode to form ions and electron beams.Fig 2.1:- Ion beam signal recorded by GaAs detector.Fig 2.2 Diagram of DPF machineThe nitrogen ions emitted from the focus region basically obey dN/dE~ E k energy relation, where N is the number of ions having energy E and k ~3.5 [21]. Number of ions is measured by using a photo conductive GaAs detector masked with a pin hole of 50 micro meter diameter, placed at the in front of target materials. It controls the numbers of ions passing through it. The operating voltage of the detector is 300 V and a Gould 4074A four channel digital storage oscilloscope records the signal. When the ion beam is incident on the detector, current is generated and the corresponding voltage is measured through oscilloscope fig-2.1.III RESULTS AND DISCUSSIONSWe have fabricated films at different substrate temperature other then room temperature, as 100o C, 150o C and 300o C and then characterize them by using X-Ray diffraction, SEM, AFM and Raman Spectroscopy techniques.Diffraction studies of the films were done using X-ray diffractometer (Philips PW 3020). The broader peaks were found. This is expected since DLC films are always found to be Nano- crystalline in nature. The particle size found around 60-80 nm.10203040506005101520253035(a)I n t e n s i t y %angle (2θ)102030405060051015202530(b)I n t e n s i t y%Angle (2θ)Fig 3.1:- Diffraction pattern of DLC films at (a) room temperature (b) 300o C temperature.From the SEM micrograph of the DLC films, the grown graphite films texture can be observed. However, the Nano-crystalline nature of film grown on substrates kept at higher temperature is evident from fig 3.2(b).(a) (b)F IG 3.2:- SEM micrograph of the films grown at (a) roomtemperature and (b) 300oC.However, for completeness of our investigation of film surface, we have also studied the surface using Atomic Force Microscope (AFM), Fig3.3. The figure shows the film surface to be smooth with surface roughness to be of the order 10-20 nm and Particles size calculated AFM micrograph is 60-08 nm.Fig 3.3:- AFM micrograph of the films grown at(a) Room temperature, (b) 100o C, (c) 150o C and (d)300o C.Raman spectroscopy is the powerful tool to determine the relative content of the sp2 and sp3 bonding in the film. The Raman spectroscopy in this work tells us about the quality of the deposited thin films by DPF method. As can be seen from fig 3.4, the Raman spectra of our films show two overlapping peaks. These peaks are the ‘G’ and ‘D’ peaks associated with sp2 bonding in graphite. The fraction of sp3 bonding present in the film can be evaluated by the peak position of the ‘G’ peaks. Also, rich information for confirming the formation of sp3 bonds can be obtained from the area, Full Width Half Maxima (FWHM) and relative intensity of ‘D’ and ‘G’ peaks. However, since these peaks overlap, we have to de-convolute them. The simplest function employed de-convolute is two Lorentzians or two Gaussians. Raman spectra of DLC films at different temperature tell about the sp2 and sp3 bonding present in the thin film state.The disordered, amorphous and carbon phase in Nano-crystalline DLC films can be characterized by measuring the position and width of G-peak and intensity ratio of G-and D-peaks in Raman spectra, rather than by directly measuring their intensities. The changes in line shape of the Raman spectrum for carbon material, when its phase changes from graphite to non-crystalline carbon (stage one) to amorphous carbon (stage two) and then to ta-C with about 85-90% sp3 bonding (stage three), have been explicitly shown in their article. During the first stage, with an increase in sp3 contents in the materials, the ratio of the intensity of ‘D’ peak (I D) to that of ‘G’ peak (I G) increases from0.0 to 0.2 and simultaneously, the ‘G’ peak position (ωG) increase from 1580 cm-1 to 1600 cm-1. However, in the second stage, a reverse trend is observed for both parameters with increases in sp3 contents: the ratio I D/I G decreases from 2.0 to 0.25, whereas, the value of ωG decreases from 1600 to 1510 cm-1. The sp3 contents can be calculated using this relation.Sp3 contents=0.24 - 48.9(ωG - 0.1580)In this equation, ωG has been taken in unit of inverse of micrometer unit. In addition to ωG, the intensity ratio of the D- and G peaks can also be used to estimate the above parameters of DLC films. This method is not fruitful, reasons being that the intensity of the D peak is quite low compared to that of G peak in our samples and at low frequency, Raman spectra the weak D-peak coexists with Raman components of other phases of carbon; hence the measured intensity of the D-peak from the curve fitting is not unique, it varies strongly with the choice of width and intensity of other nearby peaks.The D-peak present at the wave number 1340cm-1 and G-peak at the wave number 1595 cm-1, which implies DLC Intensity ratio found 78.82% at 0o C temperature. The D-peak present at the wave number 1358cm-1 and G-peak at 1580 cm-1, which implies DLC Intensity ratio found 87.04% at 3000C.the measured intensity of the D-peak from the curve fitting is not unique, it varies strongly with the choice of width and intensity of other nearby peaks.The D-peak present at the wave number 1340cm-1 and G-peak at the wave number 1595 cm-1, which implies DLC Intensity ratio found 78.82% at 0o C temperature. The D-peak present at the wave number 1358cm-1 and G-peak at 1580 cm-1, which implies DLC Intensity ratio found 87.04% at 3000C.800100012001400160018005001000150020002500RamanIntensity(a.u.)W a v e n u m b e r c m-18001000120014001600180020004000600080001000012000RamanIntensity(a.u.)W a v e n u m b e r c m-18001000120014001600180010002000300040005000RamanIntensity(a.u.)W av en u m b er c mFig 3.4:- Fitting of D and G bands in Raman spectra of DLC films at (a) 100o C (b) 150o C (c) 300o CTable 1: sp 3 contents at different temperatureTemp.CI (D)I (G)FWH MPosition of G peakSp 3 contents I (D) / I (G) 100 1504 1912 68.7 1597 0.157 78.66 150 **** **** 200 1594 0.171 77.25 3008534 9776 100.8 15840.22087.30The variation of sp 3 contents with temperature shows a linear relation as shown in fig 3.5. This indicates that at higher substrate temperature, sp 3 contents will be higher.Fig.3.5 Variation of sp 3 contents with temperature. IV CONCLUSIONThe deposited films are of amorphous (Nano-crystalline) in nature, shown by the X-Ray pattern, which is conforms bythe grain present in the AFM. The order of the grains is of thenanometer (60-80 nm). The Raman spectra explain the ratio of the bonding sp 2 and sp 3 as found to be increasing functionof substrate temperature. Before this work, the deposition onquartz is reported rarer. Deposition of DLC thin films at quartz by Dense Plasma Focusing (DPF) gives better resultswith the heated substrate and shows linear relationship. Thetribological applications of DLC films explain their resistant properties.REFERENCES[1] S. Aisenberg and R.Chabot, J.Appl.Phys., 42, 2953 (1971).[2] A.G.Fitzgerald, M.Simpson, G.A.Dederski, P.A.Moir, A.Matthews and D.Tither, Carbon, 26, 229 (1988). [3] J.Ullman, G.Schmidt and W.Schra, Thin Solid Films 214, 35 (1992).[4] E.Eldrige, G.A.Clarke, Y.Xie and R.R.Parsons, Thin Solid Films 280, 13 (1996).[5] N .H.Cho, K.M.Krishnan, D.K.Veirs, M.D.Rubin,C.B.Hooper, B.Bunsha andD.B.Bogy, J.Mater.Res.5, 2543(1990) [6] C.Weissmantel, C.Schurer, F.Frolich, P.Grau andH.Lehman, Thin Solid Films 61, L5 (1979). [7] J.J.Cuomo, J.P.Doyle, J.Bruley and J.C.Liu,J.Vac.Sci.Technol. A9, 2210(1991).[8] J.Smith, A. Dehbi and A.Matthews, Relat. Mater. 1,355(1992).[9] F.Akatsuka, Y.Hirose and K.Komaki, Jpn. J. Appl.Phys., 27, L1(1988).[10] J .Koskinen, J.Appl.Phys. 63, 2094 (1988).[11] A . C. Ferrari and J. Robertson, Philos. Trans. R. Soc.London,Ser. A 362, 2267 (2004).[12] A . C. Ferrari and J. Robertson, Phys. Rev. B 61, 14095(2000).[13] A . C. Ferrari and J. Robertson, Phys. Rev. B 64, 075414(2001).[14] S . Piscanec, F. Mauri, A. C. Ferrari, M. Lazzeri, and J.Robertson, Diamond Relat. Mater. 14, 1078 (2005). [15] K . W. R. Gilkes, S. Prawer, K. W. Nugent, J. Robertson,H. S Sands, Y. Lifshitz, and X. Shi, J. Appl. Phys. 87, 7283 (2000).[16] V . I. Merkulov, J. S. Lannin, C. H. Munro, S. A. Asher,V. S. Veerasamy, and W. I. Milne, Phys. Rev. Lett. 78,4869 (1997).[17] F . Tuinstra and J. L. Koenig, J. Chem. Phys. 53, 1126 (1970). [18] C. Castiglioni, E. Di Donato, M. Tommasini, F. Negri, and G. Zerbi, Synth. Met. 139, 885(2003). [19] S. Piscanec, M. Lazzeri, F. Mauri, A. C. Ferrari, and J. Robertson. Phys. Rev. Lett. 93, 185 (2004). [20] C . Mapelli, C. Castiglioni, G. Zerbi, and K. Mullen,Phys. Rev. B 60, 12710 (2000).[21] W. Stygar. G. Gerdin. F. Vennri. J. Mandrekas. Nuel.Fusion 22(1982). 2543 (1990).s p 3c o n t e n t stemperature ( 0C)。

滞库片烟长期存放过程中主要化学成分的变化

滞库片烟长期存放过程中主要化学成分的变化

湖南农业大学学报(自然科学版)2023,49(4):395–399.DOI:10.13331/ki.jhau.2023.04.003Journal of Hunan Agricultural University(Natural Sciences)引用格式:马一琼,李悦,崔廷,白银帅,刘向真,赵森森,牛洋洋,刘超,贾国涛,程良琨.滞库片烟长期存放过程中主要化学成分的变化[J].湖南农业大学学报(自然科学版),2023,49(4):395–399.MA Y Q,LI Y,CUI T,BAI Y S,LIU X Z,ZHAO S S,NIU Y Y,LIU C,JIA G T,CHENG L K.Research on the change of main chemical components in aged flue-cured tobacco lamina during long-termstorage[J].Journal of Hunan Agricultural University(Natural Sciences),2023,49(4):395–399.投稿网址:滞库片烟长期存放过程中主要化学成分的变化马一琼,李悦,崔廷,白银帅,刘向真,赵森森,牛洋洋,刘超,贾国涛,程良琨* (河南中烟工业有限责任公司,河南郑州 450016)摘要:以已醇化3年的福建南平C3F、云南曲靖C3F、贵州黔西南C3F和C4F片烟为材料,连续5年取样,测定片烟在滞库期间常规化学成分(总植物碱、总糖、还原糖、总氮),高级脂肪酸(亚油酸、油酸、亚麻酸、十六酸、十八酸)和多酚化合物(绿原酸、隐绿原酸、莨菪亭、芸香苷)含量,并分析其变化。

结果表明:片烟的总糖、还原糖、亚麻酸、绿原酸、隐绿原酸和芸香苷含量随着滞库时间的延长呈现逐渐降低的趋势;主成分分析表明,片烟的主成分综合得分在滞库期间逐年下降,且在滞库2~3年后片烟会出现明显的品质下降;比较黔西南C3F和C4F片烟,C3F片烟在滞库4年后的综合得分开始低于滞库前的C4F片烟综合得分,说明滞库时间过长会使得片烟发生品质降级现象;比较南平、曲靖、黔西南的C3F片烟,曲靖片烟较耐贮藏,南平片烟不耐贮藏。

不同光学边界条件强化石墨烯

不同光学边界条件强化石墨烯

第52卷第1期2021年1月中南大学学报(自然科学版)Journal of Central South University (Science and Technology)V ol.52No.1Jan.2021不同光学边界条件强化石墨烯−乙二醇纳米流体吸收器的集热性能雷晖1,2,汪孔祥1,马维刚3,谢华清1,于伟1(1.上海第二工业大学上海热功能材料工程技术研究中心,工学部环境与材料工程学院,上海,201209;2.上海第二工业大学电子废弃物资源化协同创新中心,上海,201209;3.清华大学工程力学系,热科学与动力工程教育部重点实验室,北京,100084)摘要:通过改变集热器光学边界条件来改善集热器内部温度场的均匀性,从而有效提升集热器的光热转化效率。

研究结果表明:在不同的光学边界条件下,乙二醇基石墨烯纳米片纳米流体具有不同的温度场分布以及不同的集热效率;以乙二醇作为工作流体时,顶部、底部和侧面3种光照模式下集热器光热转化效率分别为27.52%,33.64%和33.25%;以乙二醇基石墨烯纳米片纳米流体作为集热工质,最高集热器光热转化效率分别为59.68%(顶部光照模式,质量分数为0.003%),69.66%(底部光照模式,质量分数为0.005%),60.48%(侧面光照模式,质量分数为0.003%);将石墨烯纳米流体作为集热工质时,集热器光热转化效率提升近1倍。

关键词:光学边界条件;光热转化效率;石墨烯;直接式吸收器;体吸收中图分类号:TK519文献标志码:A文章编号:1672-7207(2021)01-0153-07Enhancement of heat collection properties of graphene-ethylene based nanofluid absorbers under different optical boundary conditionsLEI Hui 1,2,WANG Kongxiang 1,MA Weigang 3,XIE Huaqing 1,YU Wei 1(1.Shanghai Engineering and Technology Research Center of Thermal Functional Materials,School of Environmental and Materials Engineering,College of Engineering,Shanghai Polytechnic University,Shanghai201209,China;2.Research Center of Resources Recycling Science and Engineering,Shanghai Polytechnic University,Shanghai 201209,China;3.Key Laboratory of Thermal Science and Power Engineering,Ministry of Education,Department of EngineeringDOI:10.11817/j.issn.1672-7207.2021.01.015收稿日期:2020−06−29;修回日期:2020−07−28基金项目(Foundation item):国家自然科学基金资助项目(51476094,51590901);上海第二工业大学重点学科——材料科学与技术资助项目(XXKZD1601)(Projects(51476094,51590901)supported by the National Natural Science Foundation of China;Project(XXKZD1601)supported by the Key Discipline —Material Science and Technology of Shanghai Polytechnic University)通信作者:于伟,博士,教授,从事微纳热物性和太阳能光热利用研究;E-mail:**************.cn引用格式:雷晖,汪孔祥,马维刚,等.不同光学边界条件强化石墨烯−乙二醇纳米流体吸收器的集热性能[J].中南大学学报(自然科学版),2021,52(1):153−159.Citation:LEI Hui,WANG Kongxiang,MA Weigang,et al.Enhancement of heat collection properties of graphene-ethylene based nanofluid absorbers under different optical boundary conditions[J].Journal of Central South University(Science and Technology),2021,52(1):153−159.第52卷中南大学学报(自然科学版)mechanics,Tsinghua University,Beijing100084,China)Abstract:A method was proposed to improve the uniformity of the internal temperature field of the collector by changing the optical boundary conditions of the collector,thereby effectively improve photothermal conversion efficiency of the collector.The results show that ethylene glycol-based graphene nanosheet nanofluids have different temperature field distributions and different absorber efficiencies under different optical boundary conditions.When ethylene glycol is used as the working fluid,the photo-thermal conversion efficiencies of collector in the top,bottom,and side lighting modes are27.52%,33.64%,and33.25%,ing ethylene glycol-based graphene nanosheet nanofluid as the heat absorption medium,the maximum photothermal conversion efficiency of the collector in the top irradiation mode is59.68%(0.003%,mass fraction),and the maximum efficiency is69.66%(0.005%,mass fraction)in the bottom irradiation mode,up to60.48%(0.003%, mass fraction)in side irradiation mode.The photothermal conversion efficiency of the heat collector is improvedby about100%when graphene nanofluid is used as a heat absorption medium.Key words:optical boundary conditions;photothermal conversion efficiency;graphene nanosheets;direct absorber;bulk absorption近年来,随着环境污染的加剧和能源需求的增加,可再生清洁能源的开发与利用成为了研究重点[1]。

《2024年‘西伯利亚’百合LiCMK基因克隆及功能分析》范文

《2024年‘西伯利亚’百合LiCMK基因克隆及功能分析》范文

《‘西伯利亚’百合LiCMK基因克隆及功能分析》篇一西伯利亚百合LiCMK基因克隆及功能分析一、引言西伯利亚百合,作为一种具有独特魅力的花卉,其基因组的研究对于植物学、遗传学以及分子生物学等领域具有重要的意义。

近年来,随着基因克隆技术的不断发展,越来越多的研究者开始关注于植物基因的克隆与功能分析。

本篇论文将主要探讨西伯利亚百合中LiCMK基因的克隆及其功能分析,为后续的基因工程应用提供理论依据。

二、材料与方法1. 材料本实验所使用的西伯利亚百合样本采自我国北方地区。

此外,实验所需的各种酶、载体、试剂盒等均来自可靠的生物科技公司。

2. 方法(1)基因克隆:采用PCR技术从西伯利亚百合的cDNA中扩增出LiCMK基因片段,并将其克隆至表达载体中。

(2)功能分析:通过生物信息学手段对LiCMK基因进行序列分析,预测其编码的蛋白质功能;并通过构建转基因植物,观察LiCMK基因在植物生长发育过程中的作用。

三、实验结果1. LiCMK基因的克隆通过PCR技术成功地从西伯利亚百合的cDNA中扩增出LiCMK基因片段,经过序列测定验证了其正确性。

将该基因片段克隆至表达载体中,构建了重组表达载体。

2. LiCMK基因的序列分析通过生物信息学手段对LiCMK基因进行序列分析,发现该基因编码一个具有跨膜结构的蛋白质。

进一步分析表明,该蛋白质具有多种功能域,可能参与植物的生长、发育和代谢等过程。

3. LiCMK基因的功能分析通过构建转基因植物,观察到LiCMK基因在植物生长发育过程中具有一定的作用。

具体表现为,过表达LiCMK基因的植物在生长速度、抗逆性以及代谢等方面均表现出明显的优势。

这表明LiCMK基因具有重要生物学功能。

四、讨论本实验成功克隆了西伯利亚百合中的LiCMK基因,并对其进行了功能分析。

结果表明,LiCMK基因在植物生长发育过程中具有重要作用,可能参与植物的生长、发育和代谢等过程。

此外,过表达LiCMK基因的植物在生长速度、抗逆性以及代谢等方面均表现出明显的优势,这为后续的基因工程应用提供了重要的理论依据。

Nanoscale-综述-碳-金属氧化物

Nanoscale-综述-碳-金属氧化物
Published on 23 October 2012. Downloaded on 26/08/2014 08:24:20.

The maximum power density of a supercapacitor is determined by Pmax ¼ V2 4R (5)
nÂF M ÂV
Chengcheng Xiang received her MS degrees in Material Physics at Central South University in China in 2007 and in Industrial Engineering at West Virginia University in 2011. Currently she is a Ph.D. student in Industrial and Management System Engineering at West Virginia University in USA. Her research interest is focused on experimental design and statistical analysis, nanomaterials and their application in supercapacitors.
(3)
where n is the mean number of the electrons transferred in the redox reaction, F is the Faraday constant, M is the molar mass of the metal oxide and V is the operating voltage window.

快速获得果蝇唾腺体的技巧和方法

快速获得果蝇唾腺体的技巧和方法

快速获得果蝇唾腺体的技巧和方法周志华(福建师范大学生命科学学院,福建福州350108)摘要:解剖了三龄幼虫,获取唾腺体是果蝇唾腺染色体制片和观察的第一步。

在长期的实验准备中,虽提供大量的三龄幼虫,但在解剖幼虫时因切入点不精确,且操作工具不当,最后较难得到理想的唾腺体,影响后期唾腺的染色体制片和观察。

经过大量的实验,对解剖幼虫时的切入点和操作工具以及操作角度进行探索和改进。

最终证明,改进后的方法不但能够节约时间,节省材料,而且能够快速地获得完整的唾腺体,大大提高染色体制片和观察的效果。

关键词:果蝇唾腺;解剖技巧;遗传学实验中图分类号Q963文献标识码A文章编号1007-7731(2017)21-0039-03Skills and Methods of Quickly Getting Drosophila melanogaster Salivary GlandsZhou Zhihua(College of Life Sciences,Fujian Normal University,Fuzhou350108,China)Abstract:Anatomy of third-instar larvae,obtaining salivary glands,is the first step in the preparation and observa⁃tion of the Drosophila salivary gland chromosomes.In the long-term experimental preparation,although a large num⁃ber of third-instar larvae are provided,inaccuracies in the dissection of larvae and inaccurate handling tools make it harder to obtain ideal salivary glands,chromosomal preparations that affect later salivary glands and observed.After a large number of experiments,the larvae dissecting points and operating tools and operating point of exploration and improvement.Ultimately,the improved method not only saves time,saves materials,but also obtains the complete sal⁃ivary gland quickly and greatly improves the effect of chromosome preparation and observation.Key words:Salivary gland;Anatomy techniques;Genetics experiment双翅目昆虫果蝇饲养条件简单,费用低廉,且繁殖能力极强。

基于最小二乘支持向量机的纳米金免疫层析试条快速定量

基于最小二乘支持向量机的纳米金免疫层析试条快速定量

基于最小二乘支持向量机的纳米金免疫层析试条快速定量姜海燕;杜民【摘要】The least squares support vector machine( LSSVM) was applied to build the fitting model for quantitative determination of nano-gold immunochromatographic assay ( GICA) strip based on the reflective optical detection. The genetic algorithm ( GA) was used to solve the optimization problem of the LSSVM model between the characteristic parameters and the sample concentration. In the statistical data of the alpha-fetoprotein (AFP) GICA strip test samples,the sample relative mean square error was 12. 2%. The experimental results indicated that the least squares support vector machine model which optimizing by the genetic algorithm performed well, and proved to be appropriate in quantitative determination of GICA strip.%通过光电反射式的光路扫描纳米金免疫层析试条测试线和质控线信号,研究基于最小二乘支持向量机的纳米金免疫层析试条快速定量方法,建立遗传算法优化的最小二乘支持向量机纳米金免疫层析试条定量研究方法.该方法对纳米金免疫层析试条甲胎蛋白(AFP)检验样本的统计数据中,样本相对均方差RMSE为12.2%,实验结果表明:遗传算法优化的纳米金免疫层析试条最小二乘支持向量机定量拟合模型有较好的整体性能和局部性能,适用于纳米金免疫层析试条的快速定量.【期刊名称】《南昌大学学报(工科版)》【年(卷),期】2012(034)003【总页数】5页(P283-286,290)【关键词】金免疫层析;定量测定;最小二乘支持向量机【作者】姜海燕;杜民【作者单位】福州大学电气工程与自动化学院,福建福州350108;福建省医疗器械和医药技术重点实验室,福建福州350002;福建省医疗器械和医药技术重点实验室,福建福州350002【正文语种】中文【中图分类】TP216纳米金免疫层析方法(nano-gold immunochromatographic assay,GICA)具有检测效率高、操作简单、灵敏度高、试剂稳定及适用于单人份测定等独特优势[1],顺应了快速检测的发展方向,在生物医学领域特别是医学检验中得到了广泛应用,如临床上各种抗原或抗体检测[2-3]以及毒品、农药[4]、重金属等新兴领域小分子检测。

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Large irreversibility field in nanoscale C-doped MgB2/Fe tape conductorsYanwei Ma a), Xianping ZhangApplied Superconductivity Lab., Institute of Electrical Engineering, Chinese Academy of Sciences,P.O. 2703, Beijing 100080, ChinaS. AwajiHigh Field Laboratory for Superconducting Materials, Institute for Materials Research,Tohoku University, Sendai 980-8577, JapanZhaoshun Gao, Dongliang Wang, Zhengguang YuApplied Superconductivity Lab., Institute of Electrical Engineering, Chinese Academy of Sciences,P.O. 2703, Beijing 100080, ChinaG. Nishijima, K. WatanabeHigh Field Laboratory for Superconducting Materials, Institute for Materials Research,Tohoku University, Sendai 980-8577, JapanAbstractWe investigated the effect of nanoscale-C doping on the critical current density J c and irreversibility field B irr of Fe-sheathed MgB2 tapes prepared by the in-situ powder-in-tube method. The tapes were heat treated at 600-950°C for 1 h. Higher values of J c and B irr were seen for 5 at.%C-doped MgB2 tapes at higher sintering temperatures, where substantial substitution of boron for carbon occurred. The C-doped samples sintered at 950°C showed the highest B irr, for example, at 4.2 K, the B irr reached 22.9 T. In particular, at 20 K, B irr for the C-doped tape achieved 9 T, which is comparable to the upper critical field of the commercial NbTi at 4.2 K. This role of nano-sized C particles can be very beneficial in the fabrication of MgB2 tapes for magnetic resonance imaging applications at 20 K.a)electronic mail: ywma@IntroductionCompared to conventional metallic superconductors, MgB2 has advantages of high transition temperature (T c) and low raw material costs of both B and Mg. It is believed that MgB2 can be used with a convenient cryocooler as a conductor for a cryogen-free magnet at elevated temperatures of around 20 K [1]. In particular, recent studies found a significant upper critical field B c2 enhancement, B c2⊥ (4.2 K) ≈ 35 T and B c2// (4.2 K) ≈ 51 T, in C-alloyed films [2]. Such critical field properties exceed those of any N b-based conductor at any temperature, suggesting that MgB2 could also be a replacement for the well-known Nb3Sn as a high field magnet conductor.The method commonly used to fabricate MgB2 tape is the powder-in-tube technique [3]. So far, enormous efforts have been directed towards improving B c2 and in-field critical current density (J c) through development and application of various methods for fabrication of technically usable materials, such as chemical doping [4-8], irradiation with heavy ions [9], and various processing techniques [10-11]. Among all the methods, chemical doping is the most promising way for applications. Since MgB2 has a relatively large coherence length and small anisotropy, the fluxoids to be pinned are string-like and amenable to pinning by inclusions and precipitates in the grains.Dou et al. [4] have reported that SiC doping can significantly improve the irreversibility field (B irr) and J c. Kumakura et al. [6] used hydride-based MgB2 powder with SiC dopants in the in-situ process, enhancing B irr from 17 T to 22.5 T at 4.2 K. SiC-doped MgB2 has also been attempted by Sumption et al.[7] in metal sheathed strands reaching B c2 values up to 33 T. Since C element is widely recognized to enter the structure through replacing boron, it is expected that the carbon, which has one more electron than boron, will donate electrons to the σ band. Thus, C doping of MgB2 is believed to be a quite useful means of alloying MgB2 for enhancing B c2 and flux pinning [12-13]. Recently, we have demonstrated that a J c enhancement by more than one order of magnitude in high magnetic fields can be easily achieved through doping the MgB2/Fe tape with C nanoparticles. The highest J c value of tapes was achieved in the 5 at.% nano-C addition [14]. Therefore, we expected that transport measurements in higher fields on C-doped samples would provide additional useful information for understanding the J c and B irr behaviors of MgB2 tapes. In this work, the effect of sintering temperatureon J c-B property was investigated, and high-field resistive transitions were used to demonstrate relatively large values of B irr of C-added MgB2 tapes under various heating conditions.ExperimentalPowders of magnesium (99.8%, -325 mesh), amorphous boron (99.99%, 2-5μ) and carbon nanoparticle powders (20-30 nm, amorphous) were used for the fabrication of tapes by the in-situ powder-in-tube method. The nano-C concentration was fixed to be 5 at.%.Details of the tape fabrication procedure have been described elsewhere [14]. The sheath materials chosen for this experiment were commercially available pure Fe. The mixed powder was filled into a Fe tube of 8 mm outside diameter and 1.5 mm wall thickness in air. After packing, the tube was rotary swaged and drawn to wires of 1.5 mm in diameter. The wires were subsequently rolled to tapes of ~3.2 × 0.5 mm. Short samples (~ 4 cm each), cut from the tapes, were heated in flowing Ar at temperatures ranging from 600 to 950°C for 1 h. Undoped tapes were also prepared under the same conditions for use as reference samples.In order to precisely evaluate the B irr values at elevated temperatures, resistive transition measurements were made on 1.5 cm long tapes at the High Field Laboratory for Superconducting Materials (HFLSM) in Sendai. The resistance versus temperature curves were measured in magnetic fields up to 17 T by a four-probe method using a 20 T superconducting magnet. Four-point transport resistive measurements in high magnetic field up to 26 T at 4.2-10 K were also made using a 28 T hybrid magnet. The distance between the voltage taps was 5 mm. The applied current was 100 mA. The temperature of the tapes was changed by the combination of He gas cooling and heating, and the temperature of the tape was monitored with a thermometer attached directly to the tape.A magnetic field was applied parallel to the tape surface and perpendicular to the current flow. Values ofB irr were obtained taking the 10% points of the resistive transition. The transport J c at 4.2 K and its magnetic field dependence were evaluated by a standard four-probe technique with a criterion of 1 μV/cm. Magnetic fields were applied parallel to the tape surface by employing either a newly developed 18 T cryogen-free superconducting magnet [15] or the 28 T hybrid magnet at the HFLSM.Results and discussionFigure 1 shows the J c at 4.2 K in magnetic fields up to 18 T for 5% C-doped tapes that were sintered at different temperatures ranging from 600 to 950°C. The J c values of an undoped tape heated at 800°C are also included as a standard. Only data above 5 T are shown, because at lower field region, I c was too high to be measured.From Fig. 1, we immediately notice that the sintering temperature has a significant effect on the J c-B performance. The J c values of doped samples increased systematically with increasing sintering temperatures. All the C-doped samples sintered at different temperatures exhibited superior J c values compared to the pure tape in measuring fields of up to 18 T. The tape sintered at 950°C revealed the highest J c values with excellent J c-B performance compared to all other samples: at 4.2 K, the transport J c reached 2.11×104 A/cm2 at 10 T, over an order of magnitude larger than for the undoped sample. Furthermore, for C-added tapes, the field dependence of the J c became weaker with increasing heat treatment temperature. This behavior is quite in contrast to the SiC-doped case [16], where the J c-B curves were independent of the sintering temperature. In fact, it is recognized that the higher the sintering temperature is, the larger the proportion of C that is substituted for B in MgB2 [12-13, 17]. Therefore, our C-doped samples heated at higher temperatures showed a better field performance and higher J c, indicating that a higher annealing temperature promotes more C substitution reaction for B, thus enhancing flux pinning and improving the high-field J c.To identify the critical current properties in higher magnetic fields above 18 T, transport J c measurements were carried out by using the hybrid magnet at the HFLSM in Sendai. Figure 2 shows the magnetic-field dependence of the transport J c at 4.2 K for pure and 5% C-doped MgB2/Fe tapes. Again, both J c(B) values of C-doped MgB2 tapes were higher than for the pure MgB2 sample, and the tape heated at 950°C still exhibited the largest J c value. Specifically, C-doped tapes showed much smaller dependence of J c on magnetic field due to the C addition, which can be explained by the introduction of effective pinning centers in higher fields. However, the J c of the undoped tape decreased rapidly with increasing the magnetic field. In addition, the J c value of the pure sample fell to 10 A/cm2 at 16 T. For the C-doped tape sintered at 950°C, on the other hand, J c higher than 10 A/cm2 was observed at 23 T. Clearly, doping with C significantly improved theB irr values of MgB2 tapes well above 20 T.In order to precisely evaluate the B irr values at elevated temperatures, we performed the resistance versus temperature measurements on the pure and C-added MgB2 tapes in various magnetic fields by the four-probe resistive method. With increasing the magnetic field, both the onset and zero resistive points of the superconducting transition curve shifted towards low temperatures for MgB2 tapes, as typically shown in Fig. 3. The T c of the pure sample was 36.5 K. For the C-doped tape sintered at 800°C, T c decreased by 1.8 K. By contrast, T c was depressed to about 34.2 K for the doped sample heated at 950°C. This indicates that the extent of the C substitution reaction increases with increasing sintering temperature, resulting in T c depression, which is in agreement with a recent report [17]. As we can see, although the pure sample has a higher T c value at zero field, T c was depressed more severely in the un-doped sample compared to the C-doped one by the applied magnetic field.Figure 4 shows the temperature dependence of B irr for the pure and C-added tapes, obtained from the 10% values of their corresponding resistive transitions. Clearly, the B irr of the C-doped tapes increased more rapidly with decreasing temperature than that of the undoped one.It is noted that both the B irr curves for doped tapes showed a crossover with the pure sample at higher temperature, for instance, the crossover at 26 K for an 800°C curve while at 29 K for the 950°C curve. Although the C addition introduced a degradation of the T c, the C-doped tapes show a higher B irr in the low temperature region. In fact, the C-doped samples sintered at 950°C showed the highest B irr.Figure 4 suggests that the higher sintering temperature led to a higher H irr value in C-doped MgB2 tapes, a result indicating that a degree of carbon substitution improves with increasing heat treatment temperature. This increase in the C substitution in the B sites from higher sintering temperatures, results in an increase in the impurity scattering in the σ band and a consequent improvement in the B c2 value.It is also interesting to note from Fig.4 that at 4.2 K, B irr for the C-doped tape heated at 950°C reached 22.9 T, compared to 16 T for the undoped one. This is consistent with B irr data being determined by the transport J c(B) measurements (see Fig.2). The B irr value of 22.9 T, which is even slightly higher than that of SiC-added MgB2 tapes using MgH2+B powders [6], was comparable to the B c2 of a conventional bronzed-processedNb3Sn conductor. Most importantly, at 20 K, the B irr achieved 9 T for C-doped tapes heated at 950°C, which was comparable to the B c2 at 4.2 K of commercial NbTi conductors [18]. This result clearly demonstrates that magnetic resonance imaging magnet made by NbTi wires and operated at 4.2 K, can be replaced with a convenient cryogen-free magnet operated at around 20 K fabricated with MgB2 conductors. ConclusionsIn summary, we have synthesized nano-C doped MgB2/Fe tapes by applying heat treatments at 600-950°C. Higher values of J c(B) and B irr were seen for C-doped MgB2 tapes at higher sintering temperatures, where substantial substitution of boron for carbon occurred. In particular, the C-added tapes showed the B irr value comparable to that of commercial NbTi at 20 K. This role of nano-sized C particles can be very beneficial in the fabrication of MgB2 tapes for magnetic resonance imaging applications at 20 K. AcknowledgmentsWe thank Yulei Jiao, Ling Xiao, Haihu Wen, Liye Xiao and Liangzhen Lin for their help and useful discussions. This work is partially supported by the National Science Foundation of China (NSFC) under Grant Nos.50472063 and 50572104 and National “973” Program (Grant No. 2006CB601004).References[1] Y. Iwasa, D. C. Larbalestier, M. Okada, R. Penco, M. D. Sumption, and X. Xi, IEEETrans. Appl. Supercond. 16, 1457 (2006).[2] V. Braccini, A. Gurevich, J. E. Giencke, M. C. Jewell, C. B. Eom, E. E. Hellstrom,and D. C. Larbalestier, et al., Phys. Rev. B 71, 012504 (2005).[3] R. Flukiger, H. L. Suo, N. Musolino, C. Beneduce, P. Toulemonde, and P. Lezza,Physica C 385, 286 (2003).[4] S. X. Dou, S. Soltanian, J. Horvat, X. L. Wang, S. H. Zhou, M. Ionescu, H. K. Liu, P.Munroe, and M. Tomsic, Appl. Phys. Lett. 81, 3419 (2002).[5] J. Wang, Y. Bugoslavsky, A. Berenov, L. Cowey, A. D. Caplin, L. F. Cohen, J. L.MacManus-Driscoll, L. D. Cooley, X. Song, and D. C. Larbalestier, Appl. Phys. Lett.81, 2026 (2002).[6] H. Kumakura, H. Kitauchi, A. Matsumoto, and H. Hatakeyama, Appl. Phys. Lett. 84,3669 (2004).[7] M. D. Sumption, M. Bhatia, M. Rindfleisch, M. Tomsic, S. Soltanian, S. X. Dou, andE. W. Collings, Appl. Phys. Lett. 86, 092507 (2005).[8] Yanwei Ma, H. Kumakura, A. Matsumoto, H. Hatakeyama, and K. Togano,Supercond. Sci. Technol. 16, 852 (2003).[9] Y. Bugoslavsky, L. F. Cohen, G. K. Perkins, M. Polichetti, T. J. Tate, and R. Gwilliam,A. D. Caplin, Nature 410, 561 (2001).[10] A. Serquis, L. Civale, D. L. Hammon, X. Z. Liao, J. Y. Coulter, Y. T. Zhu, M. Jaime,D. E. Peterson, F. M. Mueller, V. F. Nesterenko, and Y. Gu, Appl. Phys. Lett. 82, 2847(2002).[11] Y anwei Ma, A. Xu, X. Li, X. Zhang, S. Awaji and K. Watanabe, Jpn. J. Appl. Phys.45, L493 (2006).[12] R. H. T Wilke, S. L. Bud'ko, P. C. Canfield, D. K. Finnemore, R. J. Suplinskas, and S.T. Hannahs, Phys. Rev. Lett. 92, 217003 (2004).[13] B. J. Senkowicz, J. E. Giencke, S. Patnaik, C. B. Eom, E. E. Hellstrom, and D. C.Larbalestier, Appl. Phys. Lett. 86, 202502 (2005).[14] Y anwei Ma, X. Zhang, G. Nishijima., K. Watanabe, S. Awaji, and X. Bai, Appl. Phys.Lett. 88, 072502 (2006).[15] G. Nishijima, S. Awaji, S. Hanai, and K. Watanabe, Fusion Eng. Design, in press.[16] H. Kumakura, H. Kitauchi, A. Matsumoto, and H. Hatakeyama, IEEE Trans. Appl.Supercond. 15, 3184 (2005).[17] W. K. Yeoh, J. H. Kim, J. Horvat, X. Xu, M. J. Qin, S. X. Dou, C. H. Jiang, T.Nakane, H. Kumakura, and P. Munroe, Supercond. Sci. Technol. 19, 596 (2006). [18] K. Tachikawa, T. Asano, and T. Takeuchi, Appl. Phys. Lett.39, 766 (1981).CaptionsFigure 1 Transport J c at 4.2 K in magnetic fields up to 18 T for 5 at.% C-doped MgB2 tapes sintered at various temperatures. The J c values of an undoped tape heated at800°C are also included as a standard.Figure 2 Transport J c-B curves at 4.2 K in the high magnetic fields of pure and 5 at.% C-doped MgB2 tapes.Figure 3 The typical resistance vs temperature curves for the pure and 5 at.% C-doped MgB2 tapes heated at 800°C.Figure 4 B irr values as a function of the temperature for the pure and 5 at.% C-doped MgB2 tapes. The B irr values were defined as the 10% points of the resistivetransition.Fig. 1 Ma et al.Fig. 2 Ma et al.Fig. 3 Ma et al.Fig. 4 Ma et al.。

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