ILD755-1中文资料

Document Number Optocoupler, Photodarlington Output, AC Input, High Gain (Single, Dual Channel)Features•AC or Polarity Insensitive Inputs•Built-in Reverse Polarity Input Protection •Industry Standard DIP Package •Lead-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECAgency Approvals•UL1577, File No. E52744 System Code H or J, Double Protection •CSA 93751•BSI IEC60950 IEC60065•DIN EN 60747-5-2 (VDE0884)DIN EN 60747-5-5 pending Available with Option 1ApplicationsDesigned for applications requiring detection or mon-itoring of AC signals.DescriptionThe IL755/ ILD755 are bidirectional input optically coupled isolators. They consist of two Gallium Ars-enide infrared emitting diodes coupled to a siliconNPN photodarlington per channel.The IL755 is single channel Darlington optocouplers.The ILD755 has two isolated channels in a single DIP package.Order InformationFor additional information on the available options refer to Option Information.Absolute Maximum RatingsT amb = 25°C, unless otherwise specifiedStresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.InputPartRemarksIL755-1CTR > 750 %, DIP-6IL755-2CTR > 1000 %, DIP-6ILD755-1CTR > 750 %, DIP-8ILD755-2CTR > 1000 %, DIP-8IL755-1X007CTR > 750 %, SMD-6 (option 7)ParameterTest conditionSymbol Value Unit Forward continuous current I F 60mA Power dissipation P diss100mW Derate linearly from 25°C1.33mW/°COutputParameter T est condition Part Symbol Value Unit Collector-emitter breakdown voltage BV CEO60V Collector-base breakdown voltage BV CBO60VPower dissipation IL755-1P diss200mWIL755-2P diss200mWILD755-1P diss150mWILD755-2P diss150mW Derate linearly from 25°C IL755-1 2.6mW/°CIL755-2 2.6mW/°CILD755-1 2.0mW/°CILD755-2 2.0mW/°CCouplerParameter T est condition Part Symbol Value Unit Isolation test voltage (PK)t = 1.0 sec.V ISO7500/5300VAC PK/V RMS Total power dissipation (LED plus detector)IL755-1P tot250mWIL755-2P tot250mWILD755-1P tot400mWILD755-2P tot400mW Derate linearly from 25°C IL755-1 3.0mW/°CIL755-2 3.0mW/°CILD755-1 3.0mW/°CILD755-2 3.0mW/°C Creepage≥7mm Clearance≥7mm Storage temperature T stg- 55 to + 150°C Operating temperature T amb- 55 to + 100°CLead soldering time at 260°C10sec. Electrical CharacteristicsT amb = 25°C, unless otherwise specifiedMinimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.InputParameter T est condition Symbol Min Typ.Max Unit Forward voltage I F = ± 10 mA V F 1.2 1.5VOutputParameter T est condition Symbol Min Typ.Max Unit Collector-emitter breakdown voltage I C = 1.0 mA BV CEO6075V Collector-base breakdown voltage I C = 10 µA BV CBO6090V Collector-emitter leakage current V CE = 10 V I CEO10100nA Document Number 83641Document Number CouplerCurrent Transfer RatioSwitching CharacteristicsTypical Characteristics (Tamb = 25 °C unless otherwise specified)ParameterTest condition Symbol MinT yp.Max Unit Collector-emitter saturation voltageI F = ± 10 mA, I C = 10 mAV CE(sat)1.0VParameter T est conditionPart Symbol Min T yp.MaxUnit Current Transfer RatioV CE = 5.0 V , I F = ± 2.0 mAIL755-1CTR 750%ILD755-1CTR 750%V CE = 5.0 V , I F = ± 1.0 mAIL755-2CTR 1000%ILD755-2CTR1000%Parameter T est conditionPart Symbol MinT yp.MaxUnit Rise time V CC = 10 V , I F = 2.0 mA, R L = 100 ΩIL755-1t r 50µs ILD755-1t r 50µs Fall time V CC = 10 V , I F = 2.0 mA, R L = 100 ΩIL755-1t f 50µs ILD755-1t f 50µs Rise time V CC = 10 V , I F = 1.0 mA, R L = 100 ΩIL755-2t r 70µs ILD755-2t r 70µs Fall timeV CC = 10 V , I F = 1.0 mA, R L = 100 ΩIL755-2t f 70µs ILD755-2t f70µsFigure 1. LED Forward Current vs.Forward Voltageiil755_01-1.5-1.0-0.50.00.51.01.56040200-20-40-60V F -LED Forward Voltage -VI F -L E D F o r w a r d C u r r e n t -m AFigure 2. Normalized Non-saturated and Saturated CTR CE vs.LED Currentiil755_02.1110100IF -LED Current -mAN C T R c e -N o r m a l i z e d C T R c e0.00.51.01.52.02.53.03.54.0 Document Number 83641Figure 3. Normalized Non-saturated and Saturated CTR CE vs.LED CurrentFigure 4. Normalized Non-Saturated and Saturated I CE vs. LEDCurrent Figure 5. Normalized Non-Saturated and Saturated Collector-Emitter Current vs. LED Current iil755_03100101.10.00.51.01.52.02.53.0IF -LED Current -mAN C T R c e -N o r m a l i z e d C T R c eiil755_041001.1.01.1110100IF -LED Current -mAN I c e -N o r m a l i z e d I c e10iil755_051001.1.001.01.1110IF -LED Current -mAN I c e -N o r m a l i z e d I c e10Figure 6. Non-Saturated and Saturated HFE vs. Base CurrentFigure 7. Low to High Propagation Delay vs. Collector LoadResistance and LED CurrentFigure 8. High to low Propagation Delay vs. Collector LoadResistance and LED Currentiil755_060200040006000800010000Ib -Base Current -µAH F E -F o r w a r d T r a n s f e r G a i niil755_07510152020406080IF -LED Current -mAt p L H -L o w /H i g h P r o p a g a t io n D e l a y -µSiil755_08510152005101520IF -LED Current -mAt p H L -H i g h /L o w P r o p a g a t i o n d e l a y -µsDocument Number Package Dimensions in Inches (mm)Figure 9. Switching Waveformiil755_09IV Figure 10. Normalized Non-Saturated and Saturated CTR CE vs.LED Currentiil755_10Package Dimensions in Inches (mm) Document Number 83641Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution andoperatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423Document Number 。