SI4856DY中文资料
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
FEATURES
D TrenchFET r Power MOSFETS D 100% R G Tested
APPLICATIONS
D Buck Converter
D Synchronous Rectifier
-Secondary Rectifier
Document Number: 71881N-Channel 30-V MOSFET
PRODUCT SUMMARY
V DS (V)
r DS(on) (W )
I D (A)
0.006 @ V GS = 10 V 1730
0.0085 @ V GS = 4.5 V
14
S D S D S D G
D
SO-8
5
678Top View
234
1N-Channel MOSFET D
G
S
ABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State Unit
Drain-Source Voltage V DS 30Gate-Source Voltage
V GS "20
V
T A = 25_C 1712Continuous Drain Current (T J = 150_C)a T A = 70_C
I D 14
9
Pulsed Drain Current
I DM "50
A
Continuous Source Current (Diode Conduction)a I S 2.7 1.40T A = 25_C 3.0 1.6Maximum Power Dissipation a
T A = 70_C P D 2.0
1.0
W Operating Junction and Storage Temperature Range
T J , T stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical
Maximum
Unit
Maximum Junction to Ambient (MOSFET)t v 10 sec
3441Maximum Junction-to-Ambient (MOSFET)a Steady State R thJA 6780_C/W
Maximum Junction-to-Foot (Drain)
Steady State
R thJF
15
19
Notes
a.Surface Mounted on 1” x 1” FR4 Board.
MOSFET SPECIFICATIONS (T J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage V GS(th)V DS = V GS , I D = 250 m A 1.0
3.0V Gate-Body Leakage
I GSS V DS = 0 V, V GS = "20 V "100nA V DS = 24 V, V GS = 0 V 1Zero Gate Voltage Drain Current I DSS V DS = 24 V, V GS = 0 V, T J = 70_C
5
m A On-State Drain Current a
I D(on)V DS w 5 V, V GS = 10 V 40
A Drain-Source On-State Resistance V GS = 10 V, I D = 17 A 0.00460.006a r DS(on)V GS = 4.5 V, I D = 14 A 0.00660.0085
W Forward Transconductance a g fs V DS = 15 V, I D = 17 A 57S Diode Forward Voltage a
V SD
I S = 2.7 A, V GS = 0 V
0.72
1.1V
Dynamic b
Total Gate Charge Q g 2130
Gate-Source Charge Q gs V DS = 15 V, V GS = 4.5 V, I D = 17 A
8nC
Gate-Drain Charge Q gd 7.2Gate-Resistance R G 0.5
1.5
2.6W
Turn-On Delay Time t d(on)1625Rise Time
t r 1020Turn-Off Delay Time t d(off)V DD = 15 V, R L = 15 W
I D ^ 1 A, V GEN = 10 V, R G = 6 W
5790ns Fall Time
t f 1625Source-Drain Reverse Recovery Time
t rr
I F = 2.7 A, di/dt = 100 A/m s 40
70
Notes
a.Pulse test; pulse width v 300 m s, duty cycle v 2%.
b.Guaranteed by design, not subject to production testing.
0.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
1
2
3
4
5V DS - Drain-to-Source Voltage (V)
V GS - Gate-to-Source Voltage (V)