SI4947DY中文资料

t1 t2
1
10
30
Square Wave Pulse Duration (sec)
4
Siliconix S-49520—Rev. C, 18-Dec-96
Siliconix S-49520—Rev. C, 18-Dec-96
3
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Si4947DY
Typical Characteristics (25_C Unless Otherwise Noted)
Source-Drain Diode Forward Voltage
0 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V)
0.8 0.6 VGS(th) Variance (V) 0.4 0.2 0.0 –0.2 –0.4 –50
Threshold Voltage
Single Pulse Power
30 25
ID = 250 mA Power (W) –25 0 25 50 75 100 125 150
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 2.5 A
8
6
4
2
0 0 2 4 6 8 10
0.4 –50
–25
0
25
50
75
100
125
150
Qg – Total Gate Charge (nC)
TJ – Junction Temperature (_C)
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On State Drain Source On-State Resistanceb Forward Transconductance b Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –30 V, VGS = 0 V VDS = –30 V, VGS = 0 V, TJ = 55_C VDS w –5 V, VGS = –10 V VGS = –10 V, ID = 2.5 A VGS = –4.5 V, ID = 1.8 A VDS = –15 V, ID = –2.5 A IS = –1.7 A, VGS = 0 V –15 0.066 0.125 5.0 –0.8 –1.2 0.085 0.19 1.0 "100 –1 –25 V nA mA A W S V
Transfer Characteristics
8 4V 4 3V 0 0 2 4 6 8
8
4
0 0 2 4 6 8
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
20 0.5
On-Resistance vs. Gate-to-Source Voltage
I S – Source Current (A)
10
rDS(on) – On-Resistance ( W )
0.4
0.3 ID = 2.5 A
0.2
TJ = 150_C
TJ = 25_C
0.1
1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD – Source-to-Drain Voltage (V)
Symbol
RthJA
Limit
62.5
Unit
_C/W
Siliconix S-49520—Rev. C, 18-Dec-96
1
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Si4947DY
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter Static
0.40 700 600 rDS(on) – On-Resistance ( W ) 0.32 C – Capacitance (pF) 500 400 300
Capacitance
Ciss
0.24 VGS = 4.5 V 0.16 VGS = 10 V
Coss 200 100 Crss
0.08
0 0 3 6 9 12 15 ID – Drain Current (A)
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Si4947DY
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
20 VGS = 10, 9, 8, 7, 6 V 16 I D – Drain Current (A) I D – Drain Current (A) 5V 12 16 20 TC = –55_C 25_C 125_C 12
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
2
Siliconix S-49520—Rev. C, 18-Dec-96
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamica
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –1.7 A, di/dt = 100 A/ms VDD = –10 V, RL = 10 W ID ^ –1 A, VGEN = –10 V, RG = 6 W VDS = –10 V, VGS = –10 V, ID = –2.5 A 8.7 1.9 1.3 7 9 14 8 50 15 18 27 15 80 ns 15 nC
0 0 6 12 18 24 30 VDS – Drain-to-Source Voltage (V)
10 VGS – Gate-to-Source Voltage (V) VDS = 10 V ID = 2.5 A
Gate ChHale Waihona Puke Baidurge
2.0 1.8 rDS(on) – On-Resistance ( W ) (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6
"3.5 "2.5
S1
S2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
–30 "20 "3.5 "2.8 "20 –1.7 2.0 1.3 –55 to 150
Unit
V
A
W _C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70156. A SPICE Model data sheet is available for this product (FaxBack document #70554).
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Si4947DY
Dual P-Channel 30-V (D-S) Rated MOSFET
Product Summary
VDS (V)
–30 30
rDS(on) (W)
0.085 @ VGS = –10 V 0.19 @ VGS = –4.5 V
ID (A)
Notes:
0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1
PDM t1 t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 62.5_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
20 15 10 5
0 0.01 0.1 1 Time (sec) 10 30
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2