Electrical properties of Be-implanted polycrystalline cubic boron nitride films

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材料英语翻译

Transportation,housing,clothing,communication,recreation and food production-virtually every segment of our everyday lives is influenced to one degree or another by material. Historically, the development and advancement of societies have been intimately tied to the members’abilities to produce and manipulate materials to fill their needs.交通、住房、衣服、通讯、娱乐和食品生产－实际上我们日常生活的每个部分某种程度上受到材料的影响。

（被动语态）古往今来，社会的发展和进步已经同人们制造和生产材料以满足他们的需要的能力紧密的联系起来了。

The earliest humans has access to only a very limited number of materials，those that occur naturally stone，wood，clay，skins，and so on. With time they discovered techniques for producing materials that had properties superior to those of natural ones: these new materials included pottery and various metals. Furthermore，it was discovered that the properties of a material could be altered by heat treatment and by the addition of other substance.（非限制定语从句）早期的人类仅仅拥有少量的材料，这些材料是天然存在的石头、粘土，皮毛等等。

请简述半导体器件工艺的十大流程

请简述半导体器件工艺的十大流程1.半导体器件工艺的第一步是晶片制备，通过晶片切割成单个晶体片。

2.然后进行晶片清洗，去除表面的杂质和污物，保证晶片的纯净度。

3.接着是光刻工艺，利用光刻胶和掩膜来定义器件的结构图案。

4.光刻完成后，进行腐蚀工艺，通过化学或物理手段去除不需要的硅材料。

5.紧接着是离子注入，向晶片中注入特定的掺杂物，改变其电性能。

6.在离子注入之后，进行退火工艺，将晶片加热以激活掺杂物并修复晶格缺陷。

7.接下来是金属化工艺，在晶片表面沉积金属层，作为电极和连线的接触。

8.随后是氧化工艺，通过氧化处理形成绝缘层，保护晶体的结构和电路。

9.还有沉积工艺，将金属、多晶硅或其他材料沉积到晶片上，形成各种结构和元件。

10.最后进行封装工艺，将单个晶片封装成最终的器件，以便与电路板连接并进行使用。

1. The first step in the process of semiconductor device fabrication is wafer preparation, which involves cutting the wafer into individual crystalline slices.2. The next step is wafer cleaning, which removes impurities and contaminants from the wafer surface to ensure its purity.3. Following that is the photolithography process, which uses photoresist and masks to define the patterns of the device.4. After photolithography, the etching process is carried out to remove unwanted silicon material through chemical or physical means.5. Next is ion implantation, where specific dopants are implanted into the wafer to alter its electrical properties.6. After ion implantation, annealing is performed to activate the dopants and repair crystal lattice defects by heating the wafer.7. Subsequently, metallization is used to deposit a metal layer on the wafer surface for electrode and interconnection contacts.8. This is followed by oxidation, where an insulating layer is formed through oxidation to protect the wafer's structure and circuits.9. There is also the deposition process, where metals, polysilicon, or other materials are deposited onto the wafer to form various structures and components.10. Finally, the packaging process involves encapsulating individual wafers into the final devices for connection to circuit boards and usage.。

材料科学与工程专业英语Unit2ClassificationofMaterials译文

Unit 2 Classification of MaterialsSolid materials have been conveniently grouped into three basic classifications: metals, ceramics, and polymers. This scheme is based primarily on chemical makeup and atomic structure, and most materials fall into one distinct grouping or another, although there are some intermediates. In addition, there are three other groups of important engineering materials —composites, semiconductors, and biomaterials.译文：译文：固体材料被便利的分为三个基本的类型：金属，陶瓷和聚合物。

固体材料被便利的分为三个基本的类型：金属，陶瓷和聚合物。

这个分类是首先基于这个分类是首先基于化学组成和原子结构来分的，化学组成和原子结构来分的，大多数材料落在明显的一个类别里面，大多数材料落在明显的一个类别里面，大多数材料落在明显的一个类别里面，尽管有许多中间品。

尽管有许多中间品。

除此之外，此之外，有三类其他重要的工程材料－复合材料，半导体材料和生物材料。

有三类其他重要的工程材料－复合材料，半导体材料和生物材料。

Composites consist of combinations of two or more different materials, whereas semiconductors are utilized because of their unusual electrical characteristics; biomaterials are implanted into the human body. A brief explanation of the material types and representative characteristics is offered next.译文：复合材料由两种或者两种以上不同的材料组成，然而半导体由于它们非同寻常的电学性质而得到使用；生物材料被移植进入人类的身体中。

材料科学与工程专业英语课文翻译(1,2,3,10).

United 1 材料科学与工程材料在我们的文化中比我们认识到的还要根深蒂固。

如交通、房子、衣物,通讯、娱乐和食物的生产,实际上,我们日常生活中的每一部分都或多或少地受到材料的影响。

历史上社会的发展、先进与那些能满足社会需要的材料的生产及操作能力密切相关。

实际上,早期的文明就以材料的发展程度来命名,如石器时代,铜器时代。

早期人们能得到的只有一些很有限的天然材料,如石头、木材、粘土等。

渐渐地,他们通过技术来生产优于自然材料的新材料,这些新材料包括陶器和金属。

进一步地,人们发现材料的性质可以通过加热或加入其他物质来改变。

在这点上,材料的应用完全是一个选择的过程。

也就是说,在一系列非常有限的材料中,根据材料的优点选择一种最适合某种应用的材料。

直到最近,科学家才终于了解材料的结构要素与其特性之间的关系。

这个大约是过去的60 年中获得的认识使得材料的性质研究成为时髦。

因此,成千上万的材料通过其特殊的性质得以发展来满足我们现代及复杂的社会需要。

很多使我们生活舒适的技术的发展与适宜材料的获得密切相关。

一种材料的先进程度通常是一种技术进步的先兆。

比如,没有便宜的钢制品或其他替代品就没有汽车。

在现代,复杂的电子器件取决于所谓的半导体零件.材料科学与工程有时把材料科学与工程细分成材料科学和材料工程学科是有用的。

严格地说,材料科学涉及材料到研究材料的结构和性质的关系。

相反,材料工程是根据材料的结构和性质的关系来设计或操纵材料的结构以求制造出一系列可预定的性质。

从功能方面来说,材料科学家的作用是发展或合成新的材料,而材料工程师是利用已有的材料创造新的产品或体系,和/或发展材料加工新技术。

多数材料专业的本科毕业生被同时训练成材料科学家和材料工程师。

“structure”一词是个模糊的术语值得解释。

简单地说,材料的结构通常与其内在成分的排列有关。

原子内的结构包括介于单个原子间的电子和原子核的相互作用。

在原子水平上,结构包括原子或分子与其他相关的原子或分子的组织。

电子信息类专业英语(西电第二版)Unit 4 Microel

Unit 4 Microelectronics
Integrated circuits are small, light, rugged, and reliable. They require less power and lower voltages than equivalent macroscopic circuits; consequently they operate at lower temperatures, and individual components may be close together without exceeding the operating temperature limit. Relatively little stray capacitance and short time delays are produced because of the short interconnections between the individual components in IC. Maintenance is simplified because if a component of the IC fails the complete IC is usually replaced. Mass production techniques of plane technology have reduced the cost of many IC so that they are almost as inexpensive as a single transistor. Eventually most conventional circuits will be replaced by IC.
［2］ The reduction in power dissipation is particularly important where a complex circuit is to be concentrated into a small space. The problem of extracting the heat generated in the circuit may then be a difficult one.

Analyzing the properties of ferroelectrics

Analyzing the properties offerroelectricsFerroelectrics are materials that have unique electrical properties that make them useful in a wide range of applications. They are characterized by the presence of a spontaneous polarization that can be reversed by the application of an external electric field. This makes them useful in a wide range of applications, from memory storage devices to piezoelectric transducers.One of the key properties of ferroelectrics is their dielectric constant. This is a measure of how much an electric field can be stored in a material before it starts to break down. Ferroelectrics have a very high dielectric constant, which makes them useful for storing charge in capacitors and other electronic components.Another important property of ferroelectrics is their piezoelectric effect. This is the ability of the material to generate an electric charge in response to mechanical stress or deformation. This property makes ferroelectrics useful in a wide range of applications, including transducers, sensors, and actuators.Ferroelectrics also exhibit a phenomenon known as hysteresis. This means that their electrical properties depend on the history of their exposure to an electric field. Specifically, the polarization of a ferroelectric material can exhibit both spontaneous and induced components. The spontaneous component arises from the material's inherent polarity, while the induced component arises from the application of an external electric field. When the external field is removed, the induced polarization disappears, but the spontaneous polarization remains. This gives rise to the hysteresis effect, where the polarization of the material depends on the history of the electric field it has been exposed to.In addition to these electrical properties, ferroelectrics also exhibit interesting magnetic properties. They can exhibit a magnetic polarization, known as ferromagnetism, which is similar to the electrical polarization that gives them their name. Ferroelectricscan also exhibit magnetoelectric coupling, where the application of a magnetic field can induce an electric field, and vice versa.Overall, the properties of ferroelectrics make them useful in a wide range of applications, from electronic components to nanotechnology. Their unique electrical properties, including their high dielectric constant, piezoelectric effect, and hysteresis, make them a valuable tool for designing cutting-edge technologies. As research into ferroelectrics continues, it is likely that we will discover even more fascinating properties and applications of these remarkable materials.。

材料科学与工程专业英语课文翻译1

United 1 材料科学与工程材料在我们的文化中比我们认识到的还要根深蒂固。

如交通、房子、衣物，通讯、娱乐和食物的生产，实际上，我们日常生活中的每一部分都或多或少地受到材料的影响。

历史上社会的发展、先进与那些能满足社会需要的材料的生产及操作能力密切相关。

实际上，早期的文明就以材料的发展程度来命名，如石器时代，铜器时代。

早期人们能得到的只有一些很有限的天然材料，如石头、木材、粘土等。

渐渐地，他们通过技术来生产优于自然材料的新材料，这些新材料包括陶器和金属。

进一步地，人们发现材料的性质可以通过加热或加入其他物质来改变。

在这点上，材料的应用完全是一个选择的过程。

也就是说，在一系列非常有限的材料中，根据材料的优点选择一种最适合某种应用的材料。

直到最近，科学家才终于了解材料的结构要素与其特性之间的关系。

这个大约是过去的60年中获得的认识使得材料的性质研究成为时髦。

因此，成千上万的材料通过其特殊的性质得以发展来满足我们现代及复杂的社会需要。

很多使我们生活舒适的技术的发展与适宜材料的获得密切相关。

一种材料的先进程度通常是一种技术进步的先兆。

比如，没有便宜的钢制品或其他替代品就没有汽车。

在现代，复杂的电子器件取决于所谓的半导体零件 .材料科学与工程有时把材料科学与工程细分成材料科学和材料工程学科是有用的。

严格地说，材料科学涉及材料到研究材料的结构和性质的关系。

相反，材料工程是根据材料的结构和性质的关系来设计或操纵材料的结构以求制造出一系列可预定的性质。

从功能方面来说，材料科学家的作用是发展或合成新的材料，而材料工程师是利用已有的材料创造新的产品或体系，和 /或发展材料加工新技术。

多数材料专业的本科毕业生被同时训练成材料科学家和材料工程师。

“structure”一词是个模糊的术语值得解释。

简单地说，材料的结构通常与其内在成分的排列有关。

原子内的结构包括介于单个原子间的电子和原子核的相互作用。

在原子水平上，结构包括原子或分子与其他相关的原子或分子的组织。

血管组织工程技术英语

血管组织工程技术英语Blood vessel tissue engineering is a rapidly advancing field that holds great promise for the development of new therapies for cardiovascular diseases. By combining principles of engineering and biology, researchers are able to create functional blood vessel substitutes that can be used to replace damaged or diseased vessels in the body.One of the key challenges in blood vessel tissue engineering is creating a scaffold that can support the growth of new blood vessels. This scaffold must be biocompatible, biodegradable, and possess the mechanical properties necessary to withstand the forces exerted by blood flow. Researchers have developed a variety of materials for use as scaffolds, including synthetic polymers, natural polymers, and decellularized extracellular matrices.In addition to the scaffold, researchers must also consider the cells that will populate the engineered blood vessel. Endothelial cells, which line the interior of blood vessels, play a crucial role in regulating blood flow and preventing clot formation. Smooth muscle cells, which surround the endothelial cells, provide structural support and help regulate vessel diameter. By seeding the scaffold with a combination of these cell types, researchers can create a functional blood vessel that closely mimics the structure and function of native vessels.To promote the growth and maturation of the engineered blood vessel, researchers often employ various biochemical and biomechanical stimuli. Growth factors, such as vascular endothelial growth factor (VEGF) and basic fibroblast growth factor (bFGF), can promote cell proliferation and migration. Mechanical forces, such as cyclic stretching and shear stress, can induce cell alignment and extracellular matrix deposition. By carefully controlling these stimuli, researchers can guide the development of the engineered blood vessel towards a mature, functional state.Once the engineered blood vessel has been implanted in the body, researchers must monitor its integration and functionality. Non-invasive imaging techniques, such as ultrasound and MRI, can be used to assess blood flow and vessel patency. Histologicalanalysis can provide information on the structure and composition of the vessel, as well as the presence of inflammatory cells or thrombi. By evaluating these parameters over time, researchers can optimize their tissue engineering strategies and improve the long-term success of the implanted vessels.In conclusion, blood vessel tissue engineering represents a promising approach for the treatment of cardiovascular diseases. By combining advanced materials, cell types, and stimuli, researchers are able to create functional blood vessel substitutes that closely mimic the structure and function of native vessels. With further research and development, engineered blood vessels may one day provide a safe and effective treatment option for patients with vascular disorders.。

材料科学基础1

Actually, It is a materials phylogeny that human history evolved
Stone Age, Bronze Age, Iron Age, Electric Age, Information Age
Fundamentals of materials science and engineering — Introduction ————————————————————————————————— —
Bronze
Fundamentals of materials science and engineering — Introduction ————————————————————————————————— —
Iron
Fundamentals of materials science and engineering — Introduction ————————————————————————————————— —
Fundamentals of materials science and engineering — Introduction ————————————————————————————————— —
Stone
Fundamentals of materials science and engineering — Introduction ————————————————————————————————— —
无孔的
Fundamentals of materials science and engineering — Introduction ————————————————————————————————— —

46 CFR subchapters J

SUBCHAPTER J—ELECTRICAL ENGINEERINGPART 110—GENERAL PROVISIONS Subpart 110.01—ApplicabilitySec.110.01–1General.110.01–2OMB control numbers assigned pur-suant to the Paperwork Reduction Act. 110.01–3Repairs and alterations.110.01–4Right of appeal.Subpart 110.10—Reference Specifications,Standards, and Codes110.10–1Incorporation by reference.Subpart 110.15—Terms Used in ThisSubchapter110.15–1Definitions.Subpart 110.20—Equivalents110.20–1Equivalents.Subpart 110.25—Plan Submittal110.25–1Plans and information required for new construction.110.25–3Procedure for submitting plans. Subpart 110.30—Testing and Inspection 110.30–1General.110.30–3Initial inspection.110.30–5Inspection for certification.110.30–7Repairs or alterations.A UTHORITY: 33 U.S.C. 1509; 43 U.S.C. 1333; 46 U.S.C. 3306, 3703; E.O. 12234, 45 FR 58801, 3 CFR, 1980 Comp., p. 277; 49 CFR 1.45, 1.46;§110.01–2 also issued under 44 U.S.C. 3507.S OURCE: CGD 74–125A, 47 FR 15232, Apr. 8, 1982, unless otherwise noted.Subpart 110.01—Applicability§110.01–1General.(a) This subchapter applies to all electrical installations on vessels sub-ject to subchapters D, H, I, I–A, K, L, O, Q, R, T, U, and W of this chapter whenever those subchapters require an electrical installation to be in accord-ance with this subchapter.(b) This subchapter applies only to electrical installations contracted for after September 30, 1996.(c) Installations and equipment ac-cepted by the Coast Guard as meeting the applicable requirements in this subchapter in effect on the date the in-stallation was contracted for and which are maintained in good and serv-iceable condition to the satisfaction of the Officer in Charge, Marine Inspec-tion, may be continued in use until re-placement is ordered by the Officer in Charge, Marine Inspection, or as speci-fied in the regulations.(d) [Reserved](e) Electrical systems internal to a pressure vessel for human occupancy (PVHO) need not meet the require-ments of this subchapter, but must meet the requirements of Subpart B (Commercial Diving Operations) of part 197 of this chapter.[CGD 74–125A, 47 FR 15232, Apr. 8, 1982, as amended by CGD 94–108, 61 FR 28271, June 4, 1996]§110.01–2OMB control numbers as-signed pursuant to the Paperwork Reduction Act.(a) Purpose. This section collects and displays the control numbers assigned to information collection and record-keeping requirements in this sub-chapter by the Office of Management and Budget (OMB) pursuant to the Pa-perwork Reduction Act of 1980 (44 U.S.C. 3501 et seq.). The Coast Guard in-tends that this section comply with the requirements of 44 U.S.C. 3507(f) which requires that agencies display a cur-rent control number assigned by the Director of the OMB for each approved agency information collection require-ment.(b) Display.46 CFR part or section where identified ordescribedCurrent OMBcontrol No. Subpart 110.25..............................................2115–0115 [49 FR 38121, Sept. 27, 1984]§110.01–3Repairs and alterations. (a) Repairs and replacements in kind must comply with either the regula-tions in this subchapter or those in ef-fect when the vessel was built.(b) Alterations and modifications, such as re-engining, re-powering, up-grading of the main propulsion control system, or replacing extensive amountsCoast Guard, DOT§110.10–1of cabling, must comply with the regu-lations in this subchapter.(c) Conversions specified in 46 U.S.C. 2101(14a), such as the addition of a midbody or a change in the service of the vessel, are handled on a case-by-case basis by the Commanding Officer, Marine Safety Center.[CGD 94–108, 61 FR 28271, June 4, 1996, as amended at 62 FR 23906, May 1, 1997]§110.01–4Right of appeal.Any person directly affected by a de-cision or action taken under this sub-chapter, by or on behalf of the Coast Guard, may appeal therefrom in ac-cordance with subpart 1.03 of this chap-ter.[CGD 88–033, 54 FR 50380, Dec. 6, 1989] Subpart 110.10—Reference Speci-fications, Standards, andCodes§110.10–1Incorporation by reference.(a) Certain material is incorporated by reference into this subchapter with the approval of the Director of the Fed-eral Register under 5 U.S.C. 552(a) and 1 CFR part 51. To enforce any edition other than that specified in paragraph (b) of this section, the Coast Guard must publish notice of change in the F EDERAL R EGISTER; and the material must be available to the public. All ap-proved material is available for inspec-tion at the Office of the Federal Reg-ister, 800 North Capitol Street NW., Suite 700, Washington, DC, and at the U.S. Coast Guard, (G–MSE), 2100 Sec-ond Street SW., Washington, DC 20593–0001, and is available from the sources indicated in paragraph (b) of this sec-tion.(b) The material approved for incor-poration by reference in this sub-chapter and the sections affected are as follows:American Bureau of Shipping (ABS) American Bureau of Ship-ping, Two World Trade Center, 106th Floor, New York, NY10048:Rules for Building and Classing Steel Vessels, 1996...........110.15–1; 111.01–9; 111.12–1(a);111.12–3; 111.12–5; 111.12–7;111.33–11; 111.35–1; 111.70–1(a); 111.105–31(n); 111.105–39(a); 111.105–40(a); 113.05–7.Rules for Building and Classing Mobile Offshore Drilling Units, 1994.111.12–1(a); 111.12–3; 111.12–5; 111.12–7; 111.33–11; 111.35–1; 111.70–1(a).American National Standards Institute (ANSI), American Na-tional Standards Institute, 11 West 42nd Street, New York,NY 10036:ANSI/ASME A17.1, Safety Code for Elevators and Esca-lators, 1993.111.91–1 ANSI/ASME A17.1A, Addenda to ANSI/ASME A17.1, Safe-ty Code for Elevators and Escalators (including Errata,1995), 1994.111.91–1.ANSI/IEEE C37.04, Rating Structure for AC High-VoltageCircuit Breakers Rated on a Symmetrical CurrentBasis, 1979.111.54–1(c).ANSI C37.12, For AC High-Voltage Circuit BreakersRated on a Symmetrical Current Basis—SpecificationGuide, 1991.111.54–1(c).American Society for Testing and Materials (ASTM), ASTMInternational Headquarters, 100 Barr Harbor Drive, West Conshohocken, PA 19428–2959:ASTM B 117–95, Standard Practice for Operating SaltSpray (Fog) Apparatus, 1996.110.15–1(b).ASTM D 4066–94b, Standard Specification for Nylon Injec-tion and Extrusion Materials (PA), 1994.111.60–1(c)Institute of Electrical and Electronic Engineers (IEEE), IEEEService Center, 445 Hoes Lane, Piscataway, NJ 08854:46 CFR Ch. I (10–1–98 Edition)§110.10–1IEEE Std C37.13, IEEE Standard for Low-Voltage ACPower Circuit Breakers used in Enclosures, 1990.111.54–1(c).IEEE Std C37.14, IEEE Standard for Low-Voltage DCPower Circuit Breakers Used in Enclosures, 1992.111.54–1(c).IEEE Std 45–1983, IEEE Recommended Practice for Elec-tric Installations on Shipboard, 1983.111.05–7; 111.15–2(b); 111.30–1; 111.30–5(a); 111.30–19(a); 111.33–3(a); 111.33–5(a); 111.40–1; 111.60–1(a); 111.60–2; 111.60–3; 111.60–5(a); 111.60–6(a); 111.60–11(c); 111.60–13(a); 111.60–19(b); 111.60–21; 111.60–23(d); 111.75–5(b); 111.105–3; 111.105–31(e); 111.105–41; 111.107–1(c); 113–65–5.IEEE Std 100–1992, The New IEEE Standard Dictionary ofElectrical and Electronics Terms, 1992.110.15–1(a).IEEE Std 320, Application Guide for AC High-Voltage Cir-cuit Breakers Rated on a Symmetrical Current Basis(ANSI/IEEE C37.010–79), 1979.111.54–1(c).IEEE Std 331, Application Guide for Low-Voltage ACNonintegrally Fused Power Circuit Breakers (UsingSeparately Mounted Current-Limiting Fuses) (ANSI/IEEE C37.27), 1987.111.54–1(c).IEEE Std 1202–1991, IEEE Standard for Flame Testing of Cables for Use in Cable Tray in Industrial and Commer-cial Occupancies, 1991.111.60–2; 111.60–6(a); 111.107–1(c).International Association of Drilling Contractors (IADC), Inter-national Association of Drilling Contractors, PO Box 4287,Houston, TX 77210–4287:IADC–DCCS–1/1991, Guidelines for Industrial System DCCable for Mobile Offshore Drilling Units, 1991.111.60–1(f).International Electrotechnical Commission (IEC), (Also availablefrom ANSI—address above.) International Electrotechnical Commission, 3, rue de Varembe, Geneva, Switzerland:IEC 56, High-Voltage Alternating-Current Circuit-Break-ers, 1987, (Including Amendment 1, 1992, Amendment 2,1995, and Amendment 3, 1996).111.54–1.IEC 68–2–52, Basic Environmental Testing Procedures,Part 2: Tests. Test KB: Salt Mist, Cyclic (Sodium Chlo-ride Solution), 1984.110.15–1(b).IEC 79–0, Electrical Apparatus for Explosive Gas Atmospheres, Part 0: General Requirements, 1983 (In-cluding Amendment 2, 1991).111.105–1; 111.105–3; 111.105–5; 111.105–7; 111.105–15(b); 111.105–17(b).IEC 79–1, Electrical Apparatus for Explosive Gas Atmospheres, Part 1: Construction and Test of Flame-proof Enclosures of Electrical Apparatus, 1990 [Includ-ing the First Supplement to the Second Edition (1971), 1975, and Amendment 1 to the Third Edition (1990), 1993].111.105–3; 111.105–5; 111.105–9; 111.105–15(b); 111.105–17(b).IEC 79–2, Electrical Apparatus for Explosive Gas Atmospheres, Part 2: Electrical Apparatus—Type of Protection ‘‘p’’, 1983.111.105–3; 111.105–5; 111.105–7(b); 111.105–15(b); 111.105–17(b).IEC 79–5, Electrical Apparatus for Explosive Gas Atmospheres, Part 5: Sand-Filled Apparatus. First Edi-tion (1967), Incorporating the First Supplement, (1969).111.105–3; 111.105–5; 111.105–15(a); 111.105–15(b); 111.105–17(b).IEC 79–6, Electrical Apparatus for Explosive Gas Atmospheres, Part 6: Oil-Immersion ‘‘o’’, 1995.111.105–3; 111.105–5; 111.105–15(a); 111.105–15(b); 111.105–17(b).IEC 79–7, Electrical Apparatus for Explosive Gas Atmospheres, Part 7: Increased Safety ‘‘e’’, 1990 (Includ-ing Amendment 1, 1991, and Amendment 2 1993).111.105–3; 111.105–5; 111.105–15(a); 111.105–15(b); 111.105–17(b).IEC 79–11, Electrical Apparatus for Explosive Gas Atmospheres, Part 11: Intrinsic Safety ‘‘i’’, 1991.111.105–3; 111.105–5; 111.105–11(a); 111.105–15(b); 111.105–17(b).Coast Guard, DOT§110.10–1IEC 79–15, Electrical Apparatus for Explosive Gas Atmospheres, Part 15: Electrical Apparatus with Type of Protection ‘‘n’’, 1987.111.105–3; 111.105–5; 111.105–15(a); 111.105–5(b); 111.105–17(b).IEC 79–18, Electrical Apparatus for Explosive Gas Atmospheres, Part 18: Encapsulation ‘‘m’’, 1992.111.105–3; 111.105–5; 111.105–15(a); 111.105–15(b); 111.105–17(b).IEC 92–3, Electrical Installation in Ships, Part 3: Cables (construction, testing and installations) Second Edi-tion, 1965, as amended through August, 1982.111.05–7; 111.60–1(a); 111.60–3(a); 111.60–3(c); 111.81–1(d).IEC 92–101, Electrical Installations in Ships, Part 101:Definitions and General Requirements, 1994 (IncludingAmendment 1, 1995).110.15–1(a); 111.81–1(d).IEC 92–201, Electrical Installations in Ships, Part 201:System Design—General 1994.111.70–3(a); 111.81–1(d).IEC 92–202, Electrical Installations in Ships, Part 202: System Design—Protection, 1994.111.50–3(c); 111.50–3(e); 111.50–3(g); 111.53–1(a); 111.54–1(a); 111.81–1(d).IEC 92–301, Electrical Installations in Ships, Part 301: Equipment—Generators and Motors, 1980 (Including Amendment 1, 1994, and Amendment 2, 1995).111.25–5(a); 111.70–1(a); 111.81–1(d).IEC 92–302, Electrical Installations in Ships, Part 302: Equipment—Switchgear and Controlgear Assemblies, 1980 (Including Amendment 1, 1989, and Amendment 2, 1994).111.30–1; 111.30–5(a); 111.30–19(a); 111.81–1(d).IEC 92–303, Electrical Installations in Ships, Part 303: Equipment—Transformers for Power and Lighting, 1980.111.20–15; 111.81–1(d).IEC 92–304, Electrical Installations in Ships, Part 304: Equipment—Semiconductor Converters, 1980 (Including Amendment 1, 1995).111.33–3(a); 111.33–5(b); 111.81–1(d).IEC 92–306, Electrical Installations in Ships, Part 306:Equipment—Luminaires and Accessories, 1980.111.75–20(a); 111.81–1(d).IEC 92–352, Electrical Installations in Ships, Part 352: Choice and Installation of Cables for Low-Voltage Power Systems, 1979, (Including Amendment 1, 1987, and Amendment 2, 1994).111.60–3(a); 111.60–3(c); 111.60–5; 111.81–1(d).IEC 92–401, Electrical Installations in Ships, Part 401: In-stallation and Test of Completed Installation, 1987.111.05–9.IEC 92–501, Electrical Installations in Ships, Part 501:Special Features—Electric Propulsion Plant, 1984.111.81–1(d).IEC 92–502, Electrical Installations in Ships, Part 502:Tankers—Special Features, 1994.111.81–1(d); 111.105–31(e).IEC 92–503, Electrical Installations in Ships, Part 503:Special Features—A.C. Supply systems with Voltagesin the Range Above 1KV up to and including 11KV, 1975.111.30–5(a); 111.81–1(d).IEC 92–504, Electrical Installations in Ships, Part 504:Special Features—Control and Instrumentation, 1994.111.81–1(d).IEC 331, Fire resisting characteristics of electric cables,1970.113.30–25(i).IEC 332–1, Tests on Electric Cables Under Fire Condi-tions, Part 1: Test on a Single Vertical Insulated Wireor Cable, 1993.111.30–19(b).IEC 332–3, Tests on Electric Cables Under Fire Condi-tions, Part 3: Test on bunched wires or cables, 1992.111.60–1(b); 111.60–2; 111.60–6(a); 111.107–1(c).IEC 363, Short-Circuit Current Evaluation with SpecialRegard to Rated Short-Circuit Capacity of Circuit-Breakers in Installations in Ships, 1972.111.52–5(c).IEC 529, Degrees of protection provided by enclosures (IP Code) 1989.111.01–9(a); 111.01–9(b); 111.01–9(c); 111.01–9(d); 111.01–9 (Note); 113.10–7; 113.20–3; 113.25–11; 113.30–25(c); 113.30–25(h); 113.40–10(b).IEC 533, Electromagnetic Compatibility of Electrical andElectronic Installations in Ships, 1977.113.05–7.IEC 947–2, Low-Voltage Switchgear and Controlgear, Part2: Circuit Breakers, 1989 (Including Amendment 1, 1992and Amendment 2, 1993).111.54–1(b).46 CFR Ch. I (10–1–98 Edition)§110.10–1IEC IP Code, see IEC 529.International Maritime Organization (IMO), International Mar-itime Organization, Publications Section, 4 Albert Em-bankment, London SE1 7SR, United Kingdom:International Convention for the Safety of Life at Sea, 1974 (SOLAS 74) Consolidated Edition, (Including 1992 Amendments to SOLAS 74, and 1994 Amendments to SOLAS 74), 1992.111.99–5; 111.105–31(n); 112.15–1(r); 113.25–6.The International Society for Measurement and Control (ISA),International Society for Measurement and Control, 67 Al-exander Drive. P.O. Box 12277 Research Triangle Park, NC27709:RP 12.6, Wiring Practices for Hazardous (Classified) Loca-tions Instrumentation Part I: Intrinsic Safety, 1995.111.105–11(e).National Electrical Manufacturers Association (NEMA), Na-tional Electrical Manufacturers Association, 2101 L Street,NW, Washington, DC 20036:NEMA Standards Publication No. ICS 2, Industrial Con-trol and Systems Controllers, Contractors, and Over-load Relays Rated not more than 2000 Volts AC or 750Volts DC, 1993.111.70–3(a).NEMA Standards Publication No. 2.3 1983, Instructionsfor the Handling, Installation, Operation, and Mainte-nance of Motor Control Centers, 1983.111.70–3(a).NEMA Standards Publication No. 2.4, NEMA and IEC De-vices for Motor Service—A Guide for Understanding theDifferences, 1989.111.70–3(a).NEMA Standards Publication No. 250, Enclosures for Electrical Equipment (1000 Volts Maximum), 1991.111.01–9(a); 111.01–9(b); 111.01–9(c); 111.01–9(d); 111.01–9 (Note); 111.10–7; 113.20–3; 113.25–11; 113.30–25(c); 113.30–25(h); 113.40–10(b).NEMA Standards Publication No. WC–3, Rubber InsulatedWire and Cable for the Transmission and Distributionof Electrical Energy, 1980 (with revisions through May1989).111.60–13(a); 111.60–13(c).NEMA Standards Publication No. WC–8, Ethylene-Pro-pylene-Rubber-Insulated Wire and Cable for the Trans-mission and Distribution of Electrical Energy, 1988(with revisions through 1992).111.60–13(a); 111.60–13(c).National Fire Protection Association (NFPA), National FireProtection Association, 1 Batterymarch Park, Quincy, MA02269:NEC, see NFPA 70.NFPA 70, National Electrical Code (NEC), 1996.................111.05–33; 111.20–15; 111.25–5(a);111.50–3(c); 111.50–7; 111.50–9;111.53–1(a); 111.54–1(a);111.55–1(a); 111.59–1; Table111.60–7; 111.60–11(f); 111.60–13(a); 111.60–13(b); 111.60–13(c); 111.60–23; 111.81–1(d);111.83–3(a); 111.105–1; 111.105–1 (Note); 111.105–3; 111.105–5;111.105–7; 111.105–9; 111.105–15(a); 111.105–17(b); 111.107–1(b).NFPA 77, Recommended Practice on Static Electricity,1993.111.105–27.NFPA 99, Standard for Health Care Facilities, 1996..........111.105–37.NFPA 496, Standard for Purged and Pressurized Enclo-sures for Electrical Equipment, 1993.111.105–7(b).Naval Publications and Forms Center (NPFC), Naval Publica-tions and Forms Center, Customer Service—Code 1052, 5801Tabor Avenue Philadelphia, PA 19120:Coast Guard, DOT§110.10–1 MIL–W–76D, Military Specification Wire and Cable,111.60–11(c).Hook-up, Electrical, Insulated, General SpecificationFor, 1992.111.60–11(c).MIL–W–16878F, Military Specification, Wire, Electrical,Insulated, General Specification For, 1992.MIL–C–24640A, Military Specification Cables, Light111.60–1(a); 111.60–3(c).Weight, Electric, Low Smoke, For Shipboard Use, Gen-eral Specification For, 1995.MIL–C–24643A, Military Specification Cables and Cords,111.60–1(a); 111.60–3(c).Electric, Low Smoke, For Shipboard Use, General Spec-ification For, 1994 (Including Amendment 1).Naval Sea Systems Command (NAVSEA), Naval Sea SystemsCommand, Code 55Z, Department of Navy Washington, DC20362:DDS 300–2, A. C. Fault Current Calculations, 1988.............111.52–5.MIL–HDBK–299 (SH), Military Handbook Cable Compari-111.60–3(c).son Handbook Data Pertaining to Electric ShipboardCable, 1989.NEC, see NFPA 70.Underwriters Laboratories Inc. (UL), Underwriters Labora-tories, Inc., 12 Laboratory Drive, Research Triangle Park,NC 27709–3995:111.60–11(c).UL 44, Standard for Rubber-Insulated Wire and Cable,1991 (including revisions through February, 1996).UL 50, Standard for Enclosures for Electrical Equipment,111.81–1(d).1995.111.60–13(a).UL 62, Standard for Flexible Cord and Fixture Wire, 1991(including revisions through February, 1996).111.60–1(c); 111.60–11(c).UL 83, Standard for Thermoplastic-Insulated Wires andCables, 1991 (including revisions through March, 1996).UL 489, Standard for Molded-Case Circuit Breakers and111.01–15(c); 111.54–1(b).Circuit-Breaker Enclosures, 1991 (including revisionsthrough June, 1995).111.81–1(d).UL 514A, Standard for Metallic Outlet Boxes, 1991 (includ-ing revisions through April, 1995).UL 514B, Standard for Fittings for Conduit and Outlet111.81–1(d).Boxes, 1989 (including revisions through April, 1995).UL 514C, Standard for Nonmetallic Outlet Boxes, Flush-111.81–1(d).Device Boxes, and Covers, 1988 (including revisionsthrough April, 1995).UL 595, Standard for Marine-Type Electric Lighting Fix-111.75–20(a); 111.75–20(e).tures, 1985 (including revisions through September,1991).UL 913, Standard for Intrinsically Safe Apparatus and As-111.105–11(a).sociated Apparatus for Use in Class I, II, and III Divi-sion 1, Hazardous (Classified) Locations, 1988.111.87–3(a).UL 1042, Standard for Electric Baseboard Heating Equip-ment, 1994 (including revisions through November, 1995).UL 1072, Standard for Medium-Voltage Power Cables, 1995111.60–1(e).(including revisions through January, 1996).111.87–3(a).UL 1096, Standard for Electric Central Air Heating Equip-ment, 1986 (including revisions through January, 1988).UL 1104, Standard for Marine Navigation Lights, 1981 (in-111.75–17(d).cluding revisions through May, 1988).UL 1203, Standard for Explosion-Proof and Dust-Ignition-111.105–9.Proof Electrical Equipment for Use in Hazardous (Clas-sified) Locations, 1994 (including revisions through Oc-tober, 1995).111.60–23(a).UL 1569, Standard for Metal-Clad Cables, 1995 (includingrevisions through April, 1996).UL 1570, Standard for Fluorescent Lighting Fixtures, 1988111.75–20.(including revisions through April, 1996).111.75–20.UL 1571, Standard for Incandescent Lighting Fixtures,1995 (including revisions through April, 1996).UL 1572, Standard for High Intensity Discharge Lighting111.75–20.Fixtures, 1995 (including revisions through May, 1996).46 CFR Ch. I (10–1–98 Edition)§110.15–1UL 1573, Standard for Stage and Studio Lighting Units,1994 (including revisions through February, 1995).111.75–20.UL 1574, Standard for Track Lighting Systems, 1995 (in-cluding revisions through July, 1995).111.75–20.ANSI/UL 1581, Reference Standard for Electrical Wires, Cables, and Flexible Cords, 1991 (including revisions through January, 1996).111.30–19(b); 111.60–2; 111.60–6(a).(c) The word ‘‘should,’’ when used in material incorporated by reference, is to be construed the same as the words ‘‘must’’ or ‘‘shall’’ for the purposes of this subchapter.[CGD 94–108, 61 FR 28271, June 4, 1996; 61 FR 33045, June 26, 1996; 61 FR 36786–36787, July 12, 1996; 61 FR 49691, Sept. 23, 1996, as amended at 62 FR 23906, May 1, 1997; CGD 97–057, 62 FR 51046, Sept. 30, 1997]Subpart 110.15—Terms Used in ThisSubchapter§110.15–1Definitions.As used in this subchapter—(a) The electrical and electronic terms are defined in IEEE Std 100 or IEC 92–101.(b) In addition to the definitions in paragraph (a) of this section—Coastwise Vessel means a vessel that normally navigates the waters of any ocean or the Gulf of Mexico 20 nautical miles or less offshore and is certifi-cated for coastwise navigation by the Coast Guard.Commandant means the Commandant of the Coast Guard.Corrosion resistant material or finish means any material or finish that meets the testing requirements of ASTM B–117 or test Kb in IEC 68–2–52 for 200 hours and does not show pitting, cracking, or other deterioration more severe than that resulting from a simi-lar test on passivated AISI Type 304 stainless steel.Corrosive location means a location exposed to the weather on vessels oper-ating in salt water or a location on board which may be exposed to the cor-rosive effects of the cargo carried or of the vessel’s systems.Dead ship condition is the condition in which the main propulsion plant, boil-ers and auxiliaries are not in operation due to the absence of power.Dripproof means enclosed so that equipment meets at least a NEMA 250 Type 1 with dripshield, NEMA 250 Type 2, NEMA 250 Type 12, or IEC IP 22 rat-ing.Embarkation station means a location from which persons embark into sur-vival craft or are assembled before em-barking into survival craft.Emergency squad means the crew des-ignated on the station bill as the nu-cleus of a damage control party. Flashpoint means the minimum tem-perature at which a liquid gives off a vapor in sufficient concentration to form an ignitable mixture with air near the surface of the liquid, as speci-fied by the appropriate test procedure and apparatus.Great Lakes vessel means a vessel that navigates exclusively on the Great Lakes and their connecting and tribu-tary waters.Independent laboratory means a lab-oratory that is accepted by the Com-mandant under part 159 of this chapter for the testing and listing or certifi-cation of electrical equipment.Location not requiring an exceptional degree of protection means a location which is not exposed to the environ-mental conditions outlined in the defi-nition for locations requiring excep-tional degrees of protection. This loca-tion requires the degree of protection of §111.01–9 (c) or (d) of this chapter. These locations include—(1) An accommodation space;(2) A dry store room;(3) A passageway adjacent to quar-ters;(4) A water closet without a shower or bath;(5) A radio, gyro and chart room; and(6) A location with similar environ-mental conditions.Location requiring an exceptional de-gree of protection means a location ex-posed to weather, seas, splashing, pres-sure-directed liquids, or similar mois-ture conditions. These locations in-clude—(1) On deck;(2) A machinery space;Coast Guard, DOT§110.25–1(3) A cargo space;(4) A location within a galley or pan-try area, laundry, or water closet which contains a shower or bath; and (5) Other spaces with similar environ-mental conditions.Marine inspector or inspector means a civilian employee or military member of the Coast Guard assigned by an Offi-cer in Charge, Marine Inspection, or the Commandant to perform duties with respect to the inspection, enforce-ment, and administration of vessel safety and navigation laws and regula-tions.Nonsparking fan means nonsparking fan as defined in ABS Rules for Build-ing and Classing Steel Vessels, section 4/5B7.7.Ocean vessel means a vessel that navi-gates the waters of any ocean or the Gulf of Mexico more than 20 nautical miles offshore and is certificated by the Coast Guard for ocean navigation. Qualified person means a person who by virtue of that person’s knowledge, ability, experience, specialized train-ing, or licensing can competently and safely perform required electrical du-ties or functions.Waterproof means watertight; except that, moisture within or leakage into the enclosure is allowed if it does not interfere with the operation of the equipment enclosed. In the case of a generator or motor enclosure, water-proof means watertight; except that, leakage around the shaft may occur if the leakage is prevented from entering the oil reservoir and the enclosure pro-vides for automatic drainage.Watertight means enclosed so that equipment meets at least a NEMA 250 Type 4 or 4X or an IEC IP 56 rating. [CGD 94–108, 61 FR 28274, June 4, 1996, as amended at 62 FR 23907, May 1, 1997; 62 FR 27659, May 20, 1997]Subpart 110.20—Equivalents§110.20–1Equivalents.The Commanding Officer, Marine Safety Center (MSC), may approve any arrangement, fitting, appliance, appa-ratus, equipment, calculation, informa-tion, or test that provides a level of safety equivalent to that established by specific provisions of this sub-chapter. Requests for approval must be submitted to the Marine Safety Center. If necessary, the Marine Safety Center may require engineering evaluations and tests to demonstrate the equiva-lence of the substitute.[CGD 94–108, 61 FR 28275, June 4, 1996] Subpart 110.25—Plan Submittal §110.25–1Plans and information re-quired for new construction.The following plans, if applicable to the particular vessel, must be submit-ted for Coast Guard review in accord-ance with §110.25–3:N OTE: A Navigation and Vessel Inspection Circular on the Subject of ‘‘Coast Guard Re-view of Merchant Vessel Plans and Specifica-tions’’ is available from the offices listed in §110.25–3. The Circular recommends practices and procedures for plan submittals.(a) Elementary one-line wiring dia-gram of the power system, supported, by cable lists, panelboard summaries, and other information including—(1) Type and size of generators and prime movers;(2) Type and size of generator cables, bus-tie cables, feeders, and branch cir-cuit cables;(3) Power, lighting, and interior com-munication panelboards with number of circuits and rating of energy con-suming devices;(4) Type and capacity of storage bat-teries;(5) Rating of circuit breakers and switches, interrupting capacity of cir-cuit breakers, and rating or setting of overcurrent devices;(6) Computations of short circuit cur-rents in accordance with Subpart 111.52; and(7) Overcurrent protective device co-ordination analysis for each generator distribution system of 1500 kilowatts or above that includes selectivity and shows that each overcurrent device has an interrupting capacity sufficient to interrupt the maximum asymmetrical short-circuit current available at the point of application.(b) Electrical plant load analysis in-cluding connected loads and computed operating loads for each condition of operation.(c) Elementary and isometric or deck wiring plans, including the location of each cable splice, a list of symbols, and。

The Properties of Doping in Materials

The Properties of Doping in MaterialsDoping is the process of introducing impurity atoms to a semiconducting material in order to alter and enhance its electrical properties. It is a widely used technique in the electronic industry to create faster, smaller and more powerful devices. In this article, we will explore the properties of doping in materials and how it affects their conductivity, resistivity, and band gap.Conductivity is a material's ability to conduct electricity. Doping can increase or decrease an otherwise non-conductive material's conductivity. This is due to the change of the number of electrons in the material's valence band. In intrinsic semiconductors, the valence band is fully occupied, and the conduction band is empty. When a dopant such as boron (B) is introduced, it has one less electron in its valence shell and is a good candidate to accept an electron from another atom. This results in the formation of positively charged holes that move as if they are particles of positive charge. As a result, the semiconductor can conduct electricity.On the other hand, doping with elements such as phosphorus (P) or arsenic (As) can increase the number of electrons in the conduction band, making the material an n-type semiconductor. These elements have one more electron in their valence shell that can easily populate the conduction band, resulting in an excess of negatively charged electrons. As a result, the material can also conduct electricity.Resistivity is the opposite of conductivity and measures a material's tendency to oppose electric current. Doping can influence the resistivity of a material as well. In an n-type semiconductor, the addition of dopants such as P or As will decrease the resistivity as more electrons become available for conduction through the material. Conversely, doping an intrinsic semiconductor with B creates an opposite effect, increasing the resistivity as fewer electrons are available for conduction.The band gap is the energy difference between the valence band and the conduction band in a semiconductor. Intrinsic semiconductors have a well-defined band gap, but doped semiconductors have their band gap altered. Doping with P or As results in areduction of the band gap, making the material more conductive and allowing for more efficient electronic devices. In contrast, doping with B results in a wider band gap and a subsequent reduction in the intrinsic carrier concentration. This leads to a lower conductivity and increased resistivity.In summary, doping is a process used in the electronic industry to modify the electrical properties of materials. The addition of impurity atoms can result in either increased or decreased conductivity, resistivity, and altered band gap. Understanding these properties is crucial in the design and fabrication of various electronic devices, such as transistors and solar cells.。

电子电器产品有害物质限制要求

rge Household Appliances 大型家用电器 2.Small Household Appliances 小型家用电器 3.IT and Telecommunications Equipment 信息与通讯设备 4. Consumer Equipment 消费者 5. Lighting Equipment 照明设备 6.Electrical and Electronic Tools 电子与电气工具 7. Toys, Leisure and Sports Equipment 玩具, 休闲娱乐设备与运动器材 8 Medical Devices (not implanted and infected devices) (after 2008) 医疗装置 (不包含灌输与被污染的装置) (2008之后) 9 Monitoring and Control Instruments (after 2008) 监测与控制仪表 (2008之后) 10.Automatic Dispenser自动售货机
Bureau Veritas CPS-Analytical
Exemption of RoHS
RoHS的豁免的豁免
1. Mercury in compact fluorescent lamps not exceeding 5 mg per lamp.
小型日光灯中的汞含量不得超过5 毫克/灯 2. Mercury in straight fluorescent lamps for general purposes not exceeding:一般用途的直管日光灯中的汞含量不得超过: — halophosphate 10 mg 磷酸盐10 毫克 — triphosphate with normal lifetime 5 mg 正常寿命的三磷酸盐5 毫克 — triphosphate with long lifetime 8 mg. 长效的三磷酸盐8 毫克 3. Mercury in straight fluorescent lamps for special purposes. 特殊用途的直管日光灯中的汞 4. Mercury in other lamps not specifically mentioned in this Annex. 本附录中未特别提及的其它照明灯中的汞含量 5. Lead in glass of cathode ray tubes, electronic components and fluorescent tubes. 阴极射线管.,电子部件和荧光管玻璃中的铅 6. Lead as an alloying element in steel containing up to 0,35% lead by weight, aluminum containing up to 0,4 % lead by weight and as a copper alloy containing up to 4% lead by weight.

综述,导电聚合物凝胶

Energy & Environmental Science
PERSPECTIVE
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dimensions.8 The continuous structure is permanent on the time scale of the experiment and is solid-like in its rheological behaviour. Owing to the intrinsic 3D network micro/nano structures of hydrogels, conducting polymer hydrogels (CPHs) are emerging as a unique material platform for electrochemical devices.9–11 Conducting polymers (CPs) are a class of functional polymers that have a delocalized p-system backbone along the polymeric chains. The highly conjugated polymer chain can be assigned reversible chemical, electrochemical and physical properties controlled by a doping/de-doping process. As a subclass of CPs, CPHs represent a unique class of polymeric materials that synergize the advantageous features of hydrogels and organic conductors.12–16 Particularly, nanostructured CPHs possess the characteristics of nanomaterials (e.g. large surface area, size, and especially the 3D continuous conducting framework), which further increase the merit of CPs in designing and making novel devices.17–19 CPHs have shown great potential in electrochemical devices, because they provide signicantly improved electrode interfaces, between the electronic transporting phase and the ionic

G7125-250 品牌：Belimo，类型：商品说明书

•••••Type overviewTypeDN G7125-250125Technical dataFunctional dataValve size [mm]5" [125]Fluidchilled or hot water, up to 60% glycol Fluid Temp Range (water)32...350°F [0...176°C]Body Pressure Rating ANSI Class 250, up to 280 psi below 350°F Flow characteristic linearServicing repack/rebuild kits available Rangeability Sv 50:1Flow Pattern 3-way Mixing Leakage rateANSI Class III Controllable flow range stem up - open B – AB Cv280MaterialsValve body Cast iron - ASTM A126 Class B Valve plug bronze Stem stainless steelStem seal NLP EPDM (no lip packing)SeatStainless steel AISI 316Pipe connection250 lb flanged Suitable actuatorsNon-Spring RVB(X)Electrical fail-safe(2*GKB(X))Safety notesWARNING: This product can expose you to lead which is known to the State of California to cause cancer and reproductive harm. For more information go to The valve has been designed for use in stationary heating, ventilation and air-conditioning systems and must not be used outside the specified field of application, especially in aircraft or in any other airborne means of transport.Only authorized specialists may carry out installation. All applicable legal or institutional installation regulations must be complied during installation.The valve does not contain any parts that can be replaced or repaired by the user.When determining the flow rate characteristic of controlled devices, the recognised directives must be observed.DimensionsTypeDN WeightG7125-250125209.48 lb [95 kg]EVB, EVX, RVB, RVXA B C D E F Number of Bolt Holes16.6" [422]15.5" [394]28.0" [711]17.5" [445]5.5" [140]5.5" [140]82*GMB, 2*GMX, 2*GKB, 2*GKXA B C D E F Number of Bolt Holes15.1" [383]16.6" [422]30.0" [762]17.5" [445]5.0" [127]6.3" [160]8RVB24-3FootnotesOn/Off, Floating Point, Non-Spring Return, Linear, 24 VTechnical dataElectrical dataNominal voltageAC/DC 24 V Nominal voltage frequency 50/60 HzNominal voltage rangeAC 19.2...28.8 V / DC 21.6...28.8 V Power consumption in operation 6 W Power consumption in rest position 1.5 W Transformer sizing 11 VAElectrical Connection 18 GA plenum cable, 1 m, with 1/2" conduit connector, degree of protection NEMA 2 / IP54Overload Protection electronic throughout full stroke Electrical Protectionactuators are double insulated Functional dataActuating force motor 4500 N [1010 lbf]Position feedback U note No Feedback Direction of motion motor selectable with switchManual override 5 mm hex crank (3/16" Allen), supplied Stroke2" [50 mm]Running Time (Motor)90 s /Running time motor note constant, independent of load Noise level, motor 65 dB(A)Position indicationMechanical, with pointer Safety dataPower source ULClass 2 Supply Degree of protection IEC/EN IP54Degree of protection NEMA/UL NEMA 2Enclosure UL Enclosure Type 2Agency ListingcULus acc. to UL60730-1A/-2-14, CAN/CSA E60730-1:02, CE acc. to 2014/30/EU and 2014/35/EU Quality Standard ISO 9001Ambient humidity Max. 95% RH, non-condensing Ambient temperature -22...122°F [-30...50°C]Storage temperature -40...176°F [-40...80°C]Servicingmaintenance-free Weight Weight9.02 lb [4.1 kg]MaterialsHousing material Die cast aluminium and plastic casing† Use flexible metal conduit. Push the listed conduit fitting device over the actuator’s cable to butt against the enclosure. Screw in conduit connector. Jacket the actuators input wiring with listed flexible conduit. Properly terminate the conduit in a suitable junction box. Rated impulse Voltage 800V. Type of action 1. Control pollution degree 3.RVB24-3 AccessoriesElectrical accessories Description TypeBattery backup system, for non-spring return models NSV24 USBattery, 12 V, 1.2 Ah (two required)NSV-BAT Electrical installationINSTALLATION NOTES ArrayActuators may be connected in parallel. Power consumption and input impedance must beobserved.Actuators may also be powered by DC 24 V.Control signal may be pulsed from either the Hot (Source) or Common (Sink) 24 V line.For triac sink the common connection from the actuator must be connected to the hotconnection of the controller. Contact closures A & B also can be triacs. A & B should both beclosed for the triac source and open for triac sink.Actuators with plenum cable do not have numbers; use color codes instead.Meets cULus requirements without the need of an electrical ground connection.Warning! Live electrical components!During installation, testing, servicing and troubleshooting of this product, it may be necessaryto work with live electrical components. Have a qualified licensed electrician or other individualwho has been properly trained in handling live electrical components perform these tasks.Failure to follow all electrical safety precautions when exposed to live electrical componentscould result in death or serious injury.Wiring diagramsOn/Off Floating Point。

离子注入技术在半导体制造中的应用与研究

离子注入技术在半导体制造中的应用与研究半导体技术已经成为当今社会的支撑之一，而离子注入技术在半导体制造中起着非常重要的作用。

离子注入技术可以将精确的化学剂量注入到半导体材料内部，从而改变材料性质。

本文将讨论离子注入技术的原理、应用和研究。

原理离子注入技术利用电子轰击和加速反应，在细小的半导体材料表面上注入离子。

这种注入离子是一种精确的过程，具有高重复性和高可控性，可以在不同的半导体材料间产生特定的效果，如少子或多子注入。

此外，离子注入技术还可以将材料引入到材料中，产生瞬间的热反应，从而改变材料的性质。

这样的方法使得目标区域仅受到活性剂的影响，其它区域则不受到任何影响。

应用离子注入技术在半导体制造中应用广泛，作为半导体製造技术的一种重要手段，其应用主要体现在以下几个方面:1. Ion implantationIon implantation is a widely used method in semiconductor manufacturing. In this process, ions of a particular element are implanted into the surface of a semiconductor. This method can be used to increase carrier densities, tailoring dopant profiles, modify electrical and mechanical properties of semiconductors.2. Thin film growthIon implantation is an effective way to prepare thin films. During the process of ion implantation, the implanted ions are dispersed within a material and form small nuclei. These seed nuclei then grow into thin films, which can have various properties. Theseattributes include very high purity, controllable crystal structure, and extremely smooth surfaces.3. Surface modificationThe surface of the semiconductor material can be modified by ion implantation, such as enhancing the performance of MOSFET devices, reducing the impact of plasma damage during etching or deposition, and improving the adhesion of materials.研究离子注入技术的研究已经从单晶到多晶、从二维到三维，甚至实现了多种离子的复合注入。

半导体微电子器件的工艺流程

半导体微电子器件的工艺流程英文回答：Semiconductor microelectronic devices are essential components in modern electronic devices. The fabrication process of these devices involves several steps, including wafer preparation, lithography, etching, deposition, and doping.The first step in the process is wafer preparation. This involves cleaning the silicon wafer to remove any impurities and contaminants. The wafer is then polished to create a smooth surface for subsequent processing.Once the wafer is prepared, the next step is lithography. In this step, a photosensitive material called a photoresist is applied to the wafer. The photoresist is then exposed to light through a mask, which contains the desired pattern. The exposed areas of the photoresist become soluble, allowing for selective removal in thesubsequent etching step.Etching is the process of selectively removing material from the wafer. There are different types of etching techniques, including wet etching and dry etching. Wet etching involves immersing the wafer in a chemical solution that selectively dissolves the exposed areas of the wafer. Dry etching, on the other hand, involves using plasma to remove material from the wafer.After etching, the next step is deposition. Deposition involves adding or depositing a thin layer of material onto the wafer. This can be done through various techniques such as physical vapor deposition (PVD) or chemical vapor deposition (CVD). PVD involves evaporating or sputtering a material onto the wafer, while CVD involves the reaction of gases to form a solid material on the wafer surface.Doping is another crucial step in the fabrication process. Doping involves introducing impurities into the semiconductor material to modify its electrical properties. This is done by either adding dopant atoms during thedeposition process or by ion implantation, where dopantions are accelerated and implanted into the wafer.After the doping process, additional layers ofmaterials may be deposited, and further lithography and etching steps may be performed to create the desired device structure. Finally, the devices are separated from thewafer and packaged for integration into electronic systems.中文回答：半导体微电子器件的制造工艺包括多个步骤，其中包括晶圆准备、光刻、刻蚀、沉积和掺杂。

半导体结构及其形成方法与流程

半导体结构及其形成方法与流程英文回答：Semiconductor structures are an integral part of modern electronic devices. They are formed using various methods and processes to achieve the desired electrical properties. In this response, we will discuss the formation of semiconductor structures in terms of two commonly used techniques: epitaxy and ion implantation.Epitaxy is a process used to grow a single-crystal semiconductor layer on a substrate. It involves the deposition of atoms or molecules onto a crystalline surface, resulting in the growth of a layer with the same crystal structure and orientation as the substrate. This techniqueis widely used to create high-quality semiconductor structures with precise control over their thickness and composition.The epitaxial growth process typically involves the useof chemical vapor deposition (CVD) or molecular beam epitaxy (MBE) techniques. In CVD, precursor gases containing the desired semiconductor elements are introduced into a reaction chamber, where they react and deposit on the substrate surface. MBE, on the other hand, involves the direct deposition of atoms or molecules onto the substrate surface under ultra-high vacuum conditions.Ion implantation is another important technique used in semiconductor structure formation. It involves the bombardment of the substrate with high-energy ions, which are accelerated using an electric field. The ions penetrate the surface of the substrate and become embedded within it, altering its electrical properties. This technique is commonly used to introduce dopant atoms into the semiconductor material, thereby creating regions with different conductivity types.The ion implantation process consists of several steps. First, the substrate is cleaned and prepared to ensure a clean surface for ion implantation. Then, the desired ions are selected and accelerated to the desired energy level.The ions are then implanted into the substrate by directing them onto the surface. After implantation, the substrate is annealed to repair any damage caused by the implantation process and to activate the dopant atoms.In summary, semiconductor structures are formed using various techniques, including epitaxy and ion implantation. Epitaxy involves the growth of a single-crystal semiconductor layer on a substrate, while ion implantation involves the introduction of dopant atoms into the substrate. These techniques play a crucial role in the fabrication of modern electronic devices.中文回答：半导体结构是现代电子器件的重要组成部分。

欧洲对电子和电器设备化学和包装的要求

•
Testing everywhere for markets anywhere
WEEE Directive
Separate Collection - Household WEEE 分类回收-家用WEEE
• • Separate collection shall be free of charge for consumers. 分类回收对消费者是免费的。 Distributors (e.g. retailers) supplying new EEE shall take back old products on a like-for-like basis. 分销商（如零售商）在销售新产品的同时应当回收旧产品。 Other take-back systems may be allowed if free and as convenient as using the distributor. 可以允许制定其他免费和便利的回收系统 Target of 4 kg of separately collected WEEE per inhabitant per year by 31 December 2006. 在2006年12月1日，要达到每人（欧盟常驻居民）每年4公斤的分类回收目标。 Member States may provide alternative take-back arrangements where WEEE: 欧盟成员国可以提供其他的回收安排，当： – Does not contain essential components; or 不包含重要的部件；或 – Contains other waste. 包含其他费料 Specific arrangements shall be made for WEEE that has been contaminated during use. 在使用过程中受到污染的WEEE应当实施特殊的处理安排

免疫系统对肌肉损伤的修复机制

免疫系统对肌肉损伤的修复机制引言肌肉损伤是人体运动和日常生活中常见的问题，包括剧烈运动、外伤和疾病等因素都会导致肌肉组织的损伤。

身体的免疫系统在肌肉损伤的修复过程中起着重要的作用。

本文将探讨免疫系统在肌肉损伤修复中的机制。

肌肉损伤的类型肌肉损伤可以分为急性损伤和慢性损伤两种类型。

急性损伤急性损伤常见于剧烈运动、外伤等情况下，通常包括肌肉拉伤、肌肉撕裂等。

急性损伤会导致肌肉组织的结构破坏和炎症反应的发生。

慢性损伤慢性损伤通常由于重复或持续的负荷作用引起，如过度使用某个肌肉群、姿势不良等。

慢性损伤会导致肌肉组织逐渐退化和疼痛。

免疫系统在肌肉损伤修复中的作用炎症反应在急性肌肉损伤发生后，免疫系统会通过炎症反应来清除受损细胞和组织垃圾，为肌肉组织的修复提供清理和准备阶段。

炎症反应的过程包括血管扩张、细胞的迁移和炎性细胞的活化等。

组织修复炎症反应的同时，免疫系统会调节和协调多种细胞和分子的活动，促进肌肉组织的修复和再生。

肌肉干细胞的激活和增殖损伤后，免疫系统会激活肌肉干细胞，使其从休眠状态转变为增殖状态。

肌肉干细胞的增殖是肌肉组织修复和再生的基础。

纤维母细胞的转化和分化免疫系统会促使纤维母细胞转化为成纤维细胞，产生胶原蛋白等胶原成分，为新生肌肉组织提供结构支持。

血管新生免疫系统还会启动血管新生过程，为新生肌肉组织提供充足的营养和氧气。

免疫供体细胞的参与除了上述的直接作用之外，免疫系统还会调节和激活多种免疫供体细胞的参与，包括巨噬细胞、淋巴细胞和树突细胞等。

这些细胞会释放多种细胞因子，促进肌肉组织修复和再生。

免疫系统的调控机制免疫系统在肌肉损伤修复过程中的作用是受到严格调控的。

多种细胞和细胞因子参与其中，形成复杂的调控网络。

炎症调节免疫系统通过炎症调节来控制肌肉损伤修复的进程。

过度或不足的炎症反应都会对修复过程产生不利影响。

调控因子许多细胞因子在肌肉损伤修复中发挥重要作用。

这些因子包括炎症因子、生长因子和细胞信号分子等。

electrical requirements

electrical requirementsElectrical requirements refer to the amount of power and voltage that electrical devices and equipment are designed to operate on. These requirements are determined by the electrical characteristics of the device or equipment, and may include specifications such as:1. Voltage: The amount of electrical pressure required to operate the device. This is typically specified in volts (V).2. Current: The amount of electrical current needed for the device to function properly. This is typically specified in amperes (A).3. Frequency: The number of cycles per second required for alternating current (AC) devices. This is typically specified in Hertz (Hz).4. Power: The amount of electrical energy required by the deviceor equipment to operate. This is typically specified in watts (W) or kilowatts (kW).5. Phase: The number of electrical phases required for the device to function properly. This can be single-phase or three-phase.6. Wiring: The type and size of wiring needed to supply power to the device or equipment.Meeting electrical requirements is essential for ensuring that electrical equipment operates safely and efficiently. It is important to consult electrical codes and standards when designing, installing,or operating electrical equipment to ensure compliance with regulatory requirements.。

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Electrical properties of Be-implanted polycrystalline cubic boron nitride ﬁlmsB.He,1W.J.Zhang,1,a͒Y.S.Zou,1Y.M.Chong,1Q.Ye,1A.L.Ji,1Y.Yang,1I.Bello,1S.T.Lee,1and G.H.Chen21Center of Super-Diamond and Advanced Films(COSDAF)and Department of Physics and MaterialsScience,City University of Hong Kong,Hong Kong SAR,China2College of Materials Science and Technology,Beijing University of Technology,Beijing,China͑Received29November2007;accepted21February2008;published online13March2008͒P-type conductivity of polycrystalline cubic boron nitride͑cBN͒ﬁlms was achieved by implantationof beryllium ions.The effects of implantation doses and annealing on the phase composition andelectrical properties of cBNﬁlms were studied.A reduction in resistivity by seven orders ofmagnitude was observed.Hall measurement revealed a corresponding hole concentration of6.1ϫ1018cm−3and mobility of3cm2/V s.The activation energy was estimated to be0.20Ϯ0.02eVfrom the temperature dependence of resistance.The electrical properties of Be-implantedﬁlms arecomparable to that of Be-doped cBN single crystals synthesized by high-pressure andhigh-temperature method.©2008American Institute of Physics.͓DOI:10.1063/1.2896643͔The combined outstanding physical and chemical prop-erties of cubic boron nitride͑cBN͒, e.g.,wide bandgap ͑Ͼ6eV͒,second highest thermal conductivity,and extreme chemical stability,make it an outstanding candidate for high-power and high-temperature electronic devices operating in harsh environments.The electronic applications of cBN re-quire a comprehensive fundamental understanding for ratio-nal control of electronic and transport properties.Neverthe-less,theﬁeld is still in its infancy.There are only few reports on the electrical properties of cBN,which is mainly due to the small size of cBN crystals synthesized by high-pressure high-temperature͑HPHT͒methods and the poor crystal qual-ity of cBNﬁlms.Several impurities͑such as Be,Mg,Si and S͒were in situ incorporated under the HPHT conditions.1–4 Cubic BN p-n junction diodes have been fabricated by grow-ing Si-doped cBN on a Be-doped seed crystal by HPHT.5It was shown that the diode could function properly from room temperature up to920K.The size of HPHT crystals is nor-mally less than1mm,which prohibits extensive applications of cBN in electronic devices.For cBNﬁlms the impurities such as Be,Mg,Si,C,and S have been incorporated into cBNﬁlms during deposition processes.6–8However,studies on the electric and transport properties of theseﬁlms are scarce due to the poor crystal-linity,low phase purity,ﬁlm instability,limited thickness, and nanocrystalline nature of cBNﬁlms.9–12It has been shown that intrinsic or unintentionally doped cBNﬁlms ex-hibit p-type13or n-type14semiconducting character depend-ing on the preparation methods.The origin of conductivity is not clearly identiﬁed yet.Theoretical calculation indicated that Be and Mg substituted at B site resulted in p-type con-ductivity,whereas Si at a B site led to n-type conductivity.15 Ion implantation is a routine approach for doping semi-conductors,and allows the introduction of a precisely con-trolled amount of impurity into the crystal independent of the solubility of the impurity.The unique capability of ion im-plantation provides an effective means to introduce almost any dopant into selected regions of a substrate.The effects of C,F,and Si ion implantation on the structure and nanome-chanical properties of cBNﬁlms have been reported.16How-ever,no corresponding study on electrical properties was performed.In this letter,we report Be ion implantation in polycrystalline cBNﬁlms deposited on diamond interlayers byﬂuorine-assisted chemical vapor deposition͑CVD͒.The effects of implantation doses and annealing on the phase composition and electrical properties of cBNﬁlms were investigated,and the activation energy of the dopant was measured.Cubic BNﬁlms were deposited by electron-cyclotron-resonance microwave plasma CVD on polycrystalline diamond-coated silicon substrates.The experimental details have been described elsewhere.17,18The implantations were carried out at room temperature by a high-power ion im-planter.Be+ions were extracted from a Penning ionization gauge in which pure Be metal was sputtered and ionized.Be ions were selected by a magnetic mass analyzer,and then accelerated to form an ion beam with desired energy.The ion beam was scanned over the cBN surface to get an even dis-tribution of Be implantation.The implanted area was con-ﬁned to8ϫ8mm2by placing an aluminum mask on the sample.The setting of implantation parameters was guided by the simulation with a Monte Carlo program SRIM.19To form a uniform distribution of dopant under cBN surface,the implantation was conducted with programed ion energies. Figure1depicts the distribution of Be ions in cBNﬁlms simulated for the implantation with ion energy at20,30,42, 50,and60keV successively at a constant dose for each en-ergy.An approximate square distribution of Be ions ranging from50to250nm is achieved.The implantation was at-tempted with several total ion doses,i.e.,5ϫ1012,5ϫ1013, 5ϫ1014,and2.5ϫ1015cm−2.Corresponding to the ion dose of2.5ϫ1015cm−2,the plateau concentration of Be ions is about1.65ϫ1020cm−3͑Fig.1͒.As reference,a sample cut from the same cBNﬁlm was implanted with argon ions un-der the identical conditions as that for Be implantation. Rapid thermal annealing͑RTA͒of the implantedﬁlms was performed at the temperature ranging from1170to1420Ka͒Author to whom correspondence should be addressed.Electronic mail:apwjzh@.hk.APPLIED PHYSICS LETTERS92,102108͑2008͒0003-6951/2008/92͑10͒/102108/3/$23.00©2008American Institute of Physics92,102108-1Downloaded 14 Jul 2008 to 59.72.120.141. Redistribution subject to AIP license or copyright; see /apl/copyright.jspfor 10min in the ambient of ultrapure nitrogen ͑99.999%͒at atmospheric pressure.As revealed by cross-sectional scanning electronic mi-croscopic observations ͑not shown here ͒,the cBN ﬁlms used in this study are about 1␮m thick.According to the simula-tion in Fig.1,the maximum projected range of the implanted ions ͑about 300nm ͒is far less than the thickness of cBN ﬁlm.Fourier transform infrared ͑FTIR ͒spectroscopy was carried out to study the phase composition of the as-deposited,as-implanted,and RTA-treated cBN ﬁlms,as shown in Fig.2.For the as-deposited samples,only an inten-sive absorption peak ranging from 1040to 1170cm −1,which is assigned to the transverse optical ͑TO ͒phonon mode of cBN,was detected.The absence of hexagonal BN ͑hBN ͒characteristic peaks indicates very high cubic phase purity ͑close to 100%͒.The deposition of cBN ﬁlms on dia-mond layers enables direct and even epitaxial growth of cBN ﬁlms without a noncubic interface.17,18After implantation and RTA at the temperature as high as 1420K ͑Fig.2͒,no obvious sp 3to sp 2phase conversion could be observed,dem-onstrating that the cubic phase in the ﬁlm maintained stable in the whole procedure.X-ray photoelectron spectroscopy was also carried out to study the chemical composition of cBN ﬁlm surfaces before and after ion implantation and RTA ͑spectra not shown here ͒.No observable difference was revealed.The electrical properties of the cBN ﬁlms were measured by using the two-probe and four-probe methods at room tem-perature in air ambient.Four silver paste dot electrodes ͑di-ameter ϳ0.5mm ͒spaced about 0.5mm from each other were painted in a straight line on the cBN ﬁlm surfaces.The I -V characteristics of cBN ﬁlms were measured on twoneighboring electrodes ͑two-probe method ͒.For the cBN ﬁlms implanted with small ion doses no obvious variation in resistance was observed after implantation and RTA.For the sample implanted with an ion dose of 2.5ϫ1015cm −2,the resistance of the cBN reduced from ϳ1011⍀for the as de-posited,to ϳ1010⍀after implantation,and drastically to ϳ104⍀after RTA at 1420K,as shown in Fig.3.Quite good linear I -V dependence was revealed for the sample after RTA treatment,indicating the formation of Ohmic contacts be-tween silver electrodes and the sample.Actually the I -V measurements were also performed on the samples annealed at the temperatures from 1170to 1370K.Nevertheless no obvious variation of resistance could be observed in com-parison with the as-implanted samples.To eliminate the metal-semiconductor contact resistance,the sheet resistances of the samples were measured by using the four-probe method,which revealed 6.1ϫ1011, 5.8ϫ1010,and 6.1ϫ104⍀/ᮀfor the as-deposited,as-implanted,and RTA-treated ﬁlms,respectively.Coinciding with the results obtained by two-probe method,the sheet resistance decreased slightly after implantation,and declined dramatically by seven orders of magnitude after RTA treat-ment.For the Ar-implanted reference ﬁlm,however,the sheet resistance maintained at the same magnitude after ion implantation and annealing.The result veriﬁes that the de-crease of resistance in Be-implanted ﬁlm is indeed induced by Be doping but not the possible defects/damages caused by implantation.The transport properties of the Be-implanted ﬁlm after RTA were investigated by Hall measurement using the Van der Pauw geometry at room temperature with a magnetic ﬁeld of 0.5T.The measurements conﬁrmed that the Be-implanted ﬁlms exhibited a p -type conductivity correspond-ing to a hole concentration of about 6.1ϫ1018cm −3and hole mobility of 3cm 2/V s.The small hole mobility is considered to be due to the large amount of grain boundaries in micro-crystalline cBN ﬁlms and a high concentration of Be atoms occupying the interstitial sites ͑as discussed below ͒,which induce serious scattering of carriers.However,it is interest-ing to note the hole mobility obtained in this experiment is comparable to that measured on Be-doped HPHT cBN single crystals ͑2cm 2/V s ͒.2The temperature-dependent resis-tances of Be-implanted ﬁlm after RTA at 1420K were mea-sured at elevated temperature ranging from 300to 400K ͑the current went beyond the uplimit of the picoammeter over this temperature ͒,as shown in Fig.4.The activation energy of dopants was evaluated to be about 0.20Ϯ0.02eV from the slope,which is close to the value obtained inBe-FIG. 1.͑Color online ͒Depth proﬁles of implanted ions simulated by SRIM2006.FIG.2.͑Color online ͒FTIR spectra of as-deposited,as-implanted,and RTA-treated cBN ﬁlms.The implantation dose is 2.5ϫ1015cm −3.RTA is performed at 1420K in N 2atmosphere for 10min.FIG. 3.͑Color online ͒Surface I -V characteristic of as-deposited,as-implanted,and RTA-treated cBN ﬁlms.Downloaded 14 Jul 2008 to 59.72.120.141. Redistribution subject to AIP license or copyright; see /apl/copyright.jspdoped single crystals ͑0.23Ϯ0.02eV ͒,5but much smaller than that of Be-doped polycrystalline cBN produced by sin-tering HPHT cBN powder ͑0.26–1.03eV ͒.3Cubic BN,such as diamond,has high atom density and strong covalent bonds.The B and N atoms occupy only about 34%in volume of a cBN crystal cell.Thus the major-ity of the Be ions implanted are injected onto interstitial sites in cBN lattice due to the small radius of Be ions ͑0.44Å͒.On the other hand,B and N atoms are displaced from their lattice sites by cascade collisions,forming B and N vacan-cies along the traces of implanted projectiles.According to the theoretical calculations,only Be substituted at B site may result in p -type conductivity of cBN.15However,the strong bonding of cBN lattice make the migration of Be to sur-rounding boron vacancies extremely difﬁcult.A very high annealing temperature is thus required to activate the ions implanted.In our experiments,the activation efﬁciency is estimated to be only around 4%even after a RTA process at 1420K.The activation efﬁciency obtained here is slightly higher than that of the boron ions implanted in polycrystal-line diamond ﬁlms ͑ϳ1%͒.20In conclusion,p -type conductivity of polycrystalline cBN ﬁlms was achieved by Be implantation.The ion dose and postimplantation annealing affected strongly the electri-cal properties of cBN ﬁlms.For the sample implanted with a total dose of 2.5ϫ1015cm −2and annealed at 1420K,a dras-tic reduction in resistivity by seven orders of magnitude was observed.The corresponding hole concentration was 6.1ϫ1018cm −3and mobility 3cm 2/V s.The activation energywas measured to be 0.20Ϯ0.02eV.The electrical properties of Be-implanted cBN ﬁlms are comparable to that of Be-doped cBN single crystals synthesized by HPHT method.The results suggest Be implantation may be an effective p -type doping approach for cBN ﬁlms.This work was ﬁnancially supported by the Research Grants Council of the Hong Kong Special Administrative Region,China ͑Project No.CityU 122805and CityU 123806͒.Support from the Croucher Foundation and Labo-ratory of Organic Optoelectronic Functional Materials and Molecular Engineering,TIPC,CAS,is also gratefully ac-knowledged.1C.X.Wang,G.W.Yang,T.C.Zhang,H.W.Liu,Y .H.Han,J.F.Luo,C.X.Gao,and G.T.Zou,Appl.Phys.Lett.83,4854͑2003͒.2T.Taniguchi,S.Koizumi,K.Watanabe,I.Sakaguchi,T.Sekiguchi,and S.Yamaoka,Diamond Relat.Mater.12,1098͑2003͒.3T.Taniguchi,J.Tanaka,O.Mishima,T.Ohsawa,and S.Yamaoka,Appl.Phys.Lett.62,576͑1993͒.4O.Mishima,K.Era,J.Tanaka,and S.Yamaoka,Appl.Phys.Lett.53,962͑1988͒.5O.Mishima,J.Tanaka,S.Yamaoka,and O.Fukunaga,Science 238,181͑1987͒.6M.Lu,A.Bousetta,A.Bensaoula,K.Waters,and J.A.Schultz,Appl.Phys.Lett.68,622͑1996͒.7K.Nose,H.S.Yang,and T.Yoshida,Diamond Relat.Mater.14,297͑2005͒.8R.W.Pryor and H.Busta,J.Appl.Phys.82,5148͑1997͒.9P.B.Mirkarimi,K.F.Mecarty,and D.L.Medlin,Mater.Sci.Eng.,R.21,47͑1997͒.10W.J.Zhang,I.Bello,Y .Lifshitz,and S.T.Lee,MRS Bull.28,184͑2003͒.11W.J.Zhang,Y .M.Chong,I.Bello,and S.T.Lee,J.Phys.D 40,6159͑2007͒.12S.N.Mohammad,Solid-State Electron.46,203͑2002͒.13D.Litvinov,C.A.Talyor,and R.Clarke,Diamond Relat.Mater.7,360͑1998͒.14A.R.Phani,S.Manorama,and V .J.Rao,Semicond.Sci.Technol.10,1520͑1995͒.15V .A.Gubanov,E.A.Pentaleri,C.Y .Fong,and B.M.Klein,Phys.Rev.B 56,13077͑1997͒.16Y .Y .Takamura and T.Yoshida,J.Vac.Sci.Technol.B 20,936͑2002͒.17W.J.Zhang,I.Bello,Y .Lifshitz,K.M.Chan,X.M.Meng,Y .Wu,C.Y .Chan,and S.T.Lee,Adv.Mater.͑Weinheim,Ger.͒16,1405͑2004͒.18W.J.Zhang,I.Bello,Y .Lifshitz,K.M.Chan,Y .Wu,C.Y .Chan,X.M.Meng,and S.T.Lee,Appl.Phys.Lett.85,1344͑2004͒.19H.Glawischnig,in Handbook of Ion Implantation Technology ,edited by J.F.Ziegler ͑North-Holland,Amsterdam,1992͒,p.223.20R.Kalish,C.Uzan-Saguy,A.Samoiloff,R.Locher,and P.Koidl,Appl.Phys.Lett.64,2532͑1994͒.FIG.4.The temperature dependence of the sheet resistance of cBN ﬁlms after ion implantation and RTA.Downloaded 14 Jul 2008 to 59.72.120.141. 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