High-powe high-efficient diode-side-pumped Nd_YAG laser
电力电子翻译
Silicon Carbide MOSFETs Challenge IGBTsSiC technology has undergone significant improvements that now allow fabrication of MOSFETs capable of outperforming their Si IGBT cousins, particularly at high power and high temperaturesIn light of recent silicon carbide (SiC) technology advances, commercial production of 1200-V 4H-SiC[1] power MOSFETs is now feasible. There have been improvements in 4H-SiC substrate quality and epitaxy, optimized device designs and fabrication processes, plus increased channel mobility with nitridation annealing.[2] SiC is a better power semiconductor than Si, because of a 10-times higher electric-field breakdown capability, higher thermal conductivity and higher temperature operation capability due to a wide electronic bandgap.SiC excels over Si as a semiconductor material in 600-V and higher-rated breakdown voltage devices. SiC Schottky diodes at 600-V and 1200-V ratings are commercially available today and are already accepted as the best solution for efficiency improvement in boost converter topologies. In addition, these diodes find use in solar inverters, because they have lower switching losses than the Si PIN freewheeling diodes now used in that application.At 600-V and 1200-V ratings, IGBTs have been the switch of choice for power conversion. Previously, Si MOSFETs were handicapped in those applications by their high on-resistance (R DSON). At high breakdown voltages, R DSON increases approximately with the square of the drain-source breakdown voltageV DSMAX.[3] The R DSON of a MOSFET consists of the sum of the channel resistance, the inherent JFET resistance and the drift resistance (Fig. 1). The drift resistance (R DRIFT) is the dominant portion of the overall resistance, where d equalsdrift-layer thickness, q equals electron charge, ìn equals channel mobility andN D equals doping factor.The new generation of SiC MOSFETs cuts drift-layer thickness by nearly a factor of 10 while simultaneously enabling the doping factor to increase by the same order of magnitude. The overall effect results in a reduction of the drift resistance to 1/100th of its Si MOSFET equivalent.The improved SiC MOSFET discussed here is an engineering sample of a 1200-V, 20-A device with a 100-mV R DSON at a 15-V gate-source voltage. Besides its inherent reduction in on-resistance, SiC also offers a substantially reducedon-resistance variation over its operating temperature. From 25°C to 150°C, SiCvariations are in the range of 20%, compared with 200% to 300% for Si. The SiC MOSFET die is capable of operation at junction temperatures greater than 200°C, but the engineering sample is limited in temperature to 150°C by its TO-247plastic package.Compared with a Si IGBT, a SiC MOSFET has a substantial advantage inconduction losses, particularly at lower power outputs. By virtue of its unipolar nature, it has no tail currents at turn-off, thereby leading to greatly reducedturn-off losses. Table 1 shows the switching loss difference when compared with a standard off-the-shelf 1200-V IGBT.The switching losses of a SiC MOSFET are less than half those of a Si IGBT (1.14 mJ versus 2.6 mJ, respectively). Combining this switching-loss reduction with the lower overall conduction losses, it is clear that the SiC switch is a much moreefficient device for high-power-conversion systems.Three-Phase Solar InverterTo demonstrate its application as a solar inverter, a 7-kW, 16.6-kHz three-phase grid-connected system was implemented. This B6 topology, developed by the Fraunhofer Institute ISE, uses a split-link dc capacitor with a connection of the neutral conductor to the center point of both capacitors. The unit connects to a 400-V grid, using 1200-V IGBTs as the standard power-conversion devices. These IGBTs were replaced by 1200-V SiC MOSFETs, and the significant performance difference is clearly visible in Fig. 2. Table 2 shows the maximum efficiency and European-efficiency improvements that were achieved.As seen by the Fig. 2 curves, the SiC devices offer a performance advantage over their Si IGBT counterparts. Maximum efficiency increased by 1.92%, and theoverall Euro-efficiency rating improved by 2.36%. This equates to a 50%reduction in overall losses in the system.Another performance-parameter improvement of note was the system's reduction in heatsink temperature at full-rated power output. At a 25°C ambient, the final steady-state heatsink temperature with the IGBTs was 93°C versus 50°C with the SiC MOSFETs.[3]There are several different ways of looking at the system benefits obtainable by using a full SiC-based solution in a photovoltaic (PV) power converter:Cost of inductive componentsThe volume of an inductive component depends most significantly on the system switching frequency. A good approximation is a reduction close to the reciprocal of the times factor increase in switching frequency, taking into account filling factor and winding technique. The cost of inductive components decreases by about 50% for a two to three times increase in switching frequency (which isentirely possible with this technology). To keep the third harmonic beneath the lower conducted emission floor of 150 kHz, the practical limit for hard switching is just below 50 kHz in these systems.∙Reduced cooling requirementsReductions of up to 50% or more in heatsink temperature are possible with this technology. A comparable reduction in heatsink sizing is possible while stillmaintaining the higher-efficiency advantage that this technology enables. This solar inverter example of reduction in heatsink sizing should allow a reduction in production cost of around 5%, while still delivering increased annual benefitthrough feed-in tariffs from the grid. A feed-in tariff is an incentive structure to encourage the adoption of renewable energy through government legislation.∙Annual feed-in benefitA common PV system with 7 kW in Germany produces approximately 7000 kWhper year with a feed-in tariff of 0.49 euro/kWh. (In June 2008, the euroapproximately was worth US$1.60.) The annual benefit is approximately 3430 euros. The three-phase inverter given in the previous example showed an increase in Euro efficiency of 2.36%. This equates to an annual gain of 81 euros per year with this particular system. This is the estimation for central Europe. However, if looking at southern Europe, where the irradiation level is about twice that inGermany, the annual benefit can be even greater, as shown in Table 3.[4]Three-Phase High-Power-Factor RectifierA three-phase six-switch rectifier整流器followed by an isolated隔离的；孤独的；单独的；偏远的dc-dc converter变换器is typically used in three-phase applications that require high power factor (HPF) and galvanic isolation电隔离between input and output. The rectifier shown in Fig. 3 (a 3-kW zero current switching resonant topology) can achieve the same goal with only two switches. When switches S1 and S2 are turned on, the stored energy in C1 to C3 is quickly moved to thesecondary-side resonant capacitor (C D) through the transformer (T R) andresonant共振的inductor (L R). The discharging time is designed to beapproximately equal to one-half of the resonant period (T O). For an optimaldesign, T O should be relatively shorter than the switching period (T S) to achieve a low total harmonic distortion谐振失真.The system was run initially最初，首先；开头at full load全负荷with a pair of standard 1200-V, 25-A-rated IGBTs. These devices were then replaced by a pair of standard 1200-V, 40-A IGBTs, and the system was re-run at full load. The efficiency versus output power功率输出curves 曲线were recorded.The IGBTs were then replaced by a pair of 1200-V, 20-A-rated SiC MOSFETs and the exercise repeated. As seen in Fig. 4, the SiC devices resulted in导致a 2.2% increase in efficiency at a 3-kW output and substantial efficiency improvement 重大的效率改进throughout the entire load curve负荷曲线. Also of note was a 25°C case-temperature reduction with the MOSFETs versus 对，相对the 40-A-rated IGBTs and a 36°C difference when compared with the 25-A-rated devices.[5]10-kV, 10-A SiC MOSFET in a Boost ConverterSiC technology shows significant improvements in the 1200-V MOSFET arena, as revealed in the two previous examples. The performance improvement becomes even greater when compared to Si power switches rated at 6.5 kV and above.Recently developed was a 10-kV, 10-A SiC MOSFET. The 10-kV device exhibits a drain-source forward voltage漏源极正向电压drop of only 4.1 V, while conducting当导通full-rated 10-A drain current with a 20-V gate-source voltage. This is equivalent to a specific on-resistance characteristic电阻特性of only 127 mV/cm2. The drain-source leakage current measured 124 nA at a 10-kV blocking voltage. In a direct comparison with a standard 6.5-kV Si IGBT in a clamped inductive switching test fixture, a SiC MOSFET exhibited 1/200th of the total switching energy of the IGBT. This unipolar SiC MOSFET's turn-on delay time was only 94 ns compared with 1.4 ìs for the IGBT and the turn-off time was only 50 ns instead of the IGBT's 540 ns.To analyze in-circuit performance, a 10-kV SiC MOSFET was combined with a 10-kV SiC Schottky diode and an air-core inductor in a standard boost-circuit topology (Fig. 5). The circuit was designed to boost a 500-Vdc input to a 5-kVdc output at a switching frequency of 20 kHz. The system ran at 91% efficiency throughout the power band up to 600 W. Considering that this same circuit with 考虑同样用标准Si MOSFET 开关的电路standard Si MOSFET switches would only be capable of能够运行在几百赫兹的开关平率下a few hundred Hertz switching frequency, there is 将有更显著的性能提高应用SiC 材料在这个电压水平an even greater performance advantage with SiC material at these voltagelevels. The waveform shown in Fig. 6 exhibits the exceptionally fast turn-offtransient of this system.[6]With the most recent advancements in SiC materials processing加工and device design, it will soon be possible to produce reliable MOSFET switches for the commercial marketplace. Considering the recent surge in interest in alternative energy systems, SiC technology is now ready to further improve their benefits.The reduction in power losses 减少能源损耗，that this technology will provide 提供，供给in a PV system's power conversion section这项技术将在光伏系统的功率转换部分提供应用will enable more efficient usage使用of PV panel energy光伏板能量,将使光伏电池的能量更有效地使用in turn providing more power to the grid and allowing a reduction in future fossil-fuel generation在向电网提供更多的权力，允许在未来减少化石燃料发电.References1.4H refers to the SiC crystalline structure used in power semiconductors.2.Hull, Brett, et al. “Status of 1200 V 4H-SiC Power DMOSFETs,”International Semiconductor Device Research Symposium, December 2007.3.Burger, B.; Kranzer, D.; Stalter, O.; and Lehrmann, S. “Silicon Carbide(SiC) D-MOS for Grid-Feeding Solar-Inverters,” Fraunhofer Institute, EPE 2007, September 2007.4.Burger, B.; Kranzer, D.; and Stalter, O. “Cost Reducti on of PV Inverterswith SiC DMOSFETs,” Fraunhofer Institute, 5th International Conference onIntegrated Power Electronics Systems, March 2008.5.Yang, Yungtaek; Dillman, David L.; and Jovanovic, Milan M.“Performance Evaluation of Silicon Carbide MOSFET in T hree-PhaseHigh-Power-Factor Rectifier,” Power Electronics Laboratory, DeltaProducts, .6.Das, Mrinal K., et al. “State-of-the-Art 10-kV NMOS Transistors,”20th Annual International Symposium on Power Semiconductor Devices and ICs, May 2008.碳化硅MOSFETs挑战IGBTCs出处:/discrete-power-semis/silicon-ca rbide-mosfets-challenge-igbtsMichael O'Neill, Applications Engineering Manager, CREE, Durham, N.C.摘要:SiC技术经历了显著的改善和提高,使现在允许制造MOSFET的性能优于他们的表兄弟Si IGBT,特别是在大功率和高温方面。
高效稳定钙钛矿量子点的合成及其打印发光薄膜应用
高效稳定钙钛矿量子点的合成及其打印发光薄膜应用（中英文版）英文文档：The synthesis of efficient and stable perovskite quantum dots (QDs) and their applications in light-emitting diode (LED) printing is presented in this study.Perovskite QDs have gained significant attention due to their excellent optical properties, such as high quantum yield, tunable emission wavelength, and narrow emission width.The synthesis of perovskite QDs with high efficiency and stability is crucial for their applications in LED printing.In this work, we report a facile synthesis method for efficient and stable perovskite QDs using a one-step colloidal synthesis approach.The method involves the reaction of organicammonium halide and inorganic halide precursors in a polar solvent under mild reaction conditions.The reaction is controlled by adjusting the stoichiometry of the precursors and the reaction time.The synthesized QDs exhibit high photoluminescence quantum yield, narrow emission width, and good stability under ambient conditions.The synthesized perovskite QDs are further utilized to fabricate LED printing films.The film preparation process involves the spin-coating of a QD solution onto a substrate and subsequent annealing at a specific temperature.The film thickness and QD concentration are optimized toachieve the desired optical properties.The resulting LED printing films exhibit efficient and stable electroluminescence with tunable emission wavelengths.The applications of the perovskite QD-based LED printing films are explored in various fields, including display technology, solid-state lighting, and optical communication systems.The efficient and stable emission properties of the films make them suitable candidates for high-performance LED devices.Overall, this study demonstrates a facile synthesis method for efficient and stable perovskite QDs and their applications in LED printing.The synthesized QDs and LED printing films offer promising prospects for future optoelectronic devices.中文文档：本研究介绍了高效稳定钙钛矿量子点（QDs）的合成及其在发光二极管（LED）打印发光薄膜应用。
高功率密度激发荧光材料的反常热猝灭效应
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yellow Ce 3+luminescence in YAGʒCe [J].Chem.Mater .,2009,21(10):2077-2084.郑鹏(1991-),男,安徽亳州人,博士研究生,2014年于北京科技大学获得硕士学位,主要从事激光照明与显示用荧光材料的研究㊂E-mail:zheng_peng@foxmail.com解荣军(1969-),男,江苏镇江人,博士,教授,1998年于中国科学院上海硅酸盐研究所获得博士学位,主要从事稀土发光材料㊁量子点和发光器件的研究㊂E-mail:rjxie@第42卷㊀第10期2021年10月发㊀光㊀学㊀报CHINESE JOURNAL OF LUMINESCENCEVol.42No.10Oct.,2021文章编号:1000-7032(2021)10-1458-24㊀㊀收稿日期:2021-06-02;修订日期:2021-07-01㊀㊀基金项目:国家自然科学基金(61975070,51902143,61971207);江苏省高校优势学科建设项目(PAPD);江苏省重点研发项目(BE2018062,BE2019033);江苏省自然科学基金(BK20191467);江苏省国际科技合作项目(BZ2019063,BZ2020045,BZ2020030);徐州市技术创新专项(KC19250,KC20201,KC20244);江苏省研究生科研与实践创新计划项目(SJCX21_1137)资助Supported by National Natural Science Foundation of China(61975070,51902143,61971207);Priority Academic Program Devel-opment of Jiangsu Higher Education Institutions (PAPD );Key Research and Development Project of Jiangsu Province (BE2018062,BE2019033);Natural Science Foundation of Jiangsu Province(BK20191467);International S&T Cooperation Pro-gram of Jiangsu Province (BZ2019063,BZ2020045,BZ2020030);Special Project for Technology Innovation of Xuzhou City (KC19250,KC20201,KC20244);Postgraduate Research &Practice Innovation Program of Jiangsu Province(SJCX21_1137)高功率密度激发荧光材料的反常热猝灭效应张曦月1,张㊀乐1∗,孙炳恒2,马跃龙1,3,康㊀健1,侯㊀晨1,姜本学2∗,刘永福4∗,陈㊀浩1(1.江苏师范大学物理与电子工程学院,江苏省先进激光材料与器件重点实验室,江苏徐州㊀221116;2.中国科学院上海光学精密机械研究所,上海㊀201800;3.江苏大学机械工程学院,江苏镇江㊀212013;㊀4.中国科学院宁波材料技术与工程研究所,浙江宁波㊀315201)摘要:荧光转换材料普遍存在的发光强度随温度升高而降低的热猝灭现象严重影响了器件的性能,限制了其在高功率发光二极管(LED)/激光二极管(LD)照明中的应用㊂然而,部分荧光材料却会出现随着温度升高发光强度增大的现象,即反常热猝灭效应㊂反常热猝灭作为提升发光材料及其器件应用性能的有效途径得到了广泛研究㊂本文总结了目前反常热猝灭效应在发光领域的研究现状及应用,阐述了发光反常热猝灭的机理,并对其未来发展趋势进行了展望,以期开发出具有更优反常热猝灭特性的新型发光材料,满足高效高功率LED /LD 照明器件的应用需求㊂关㊀键㊀词:高功率密度;LED /LD 照明;热猝灭现象;反常热猝灭效应中图分类号:O482.31㊀㊀㊀文献标识码:A㊀㊀㊀DOI :10.37188/CJL.20210202Abnormal Thermal Quenching Effect ofHigh Power Density Excited Fluorescent MaterialsZHANG Xi-yue 1,ZHANG Le 1∗,SUN Bing-heng 2,MA Yue-long 1,3,KANG Jian 1,HOU Chen 1,JIANG Ben-xue 2∗,LIU Yong-fu 4∗,CHEN Hao 1(1.Jiangsu Key Laboratory of Advanced Laser Materials and Devices ,School of Physics Electronic Engineering ,Jiangsu Normal University ,Xuzhou 221116,China ;2.Shanghai Institute of Optics Fine Mechanics ,Chinese Academy of Sciences ,Shanghai 201800,China ;3.School of Mechanical Engineering ,Jiangsu University ,Zhenjiang 212013,China ;4.Ningbo Institute of Materials Technology &Engineering ,Chinese Academy of Sciences ,Ningbo 315201,China )∗Corresponding Authors ,E-mail :zhangle @ ;jiangsic @ ;liuyongfu @Abstract :Thermal quenching is a phenomenon that the luminescence intensity of fluorescent con-version materials decreases with the increase of temperature,and it seriously affects the performance of the devices and limits the applications in high power LED /LD lighting.However,the lumines-cence intensity of some fluorescent materials often increases with the rise of temperature,which is named as the abnormal thermal quenching effect.As an effective way to improve the performance ofluminescent materials and devices,the abnormal thermal quenching effect has been widely studied.㊀第10期张曦月,等:高功率密度激发荧光材料的反常热猝灭效应1459㊀In this paper,the research status and application of fluorescent materials with abnormal thermal quenching effect was reviewed,the mechanism of abnormal thermal quenching effect was illustrated, and its future development trend was prospected.This review will help to develop new luminescent materials with better abnormal thermal quenching characteristics to meet the application requirements of high efficiency and high power LED/LD lighting devices.Key words:high power density;LED/LD lighting;thermal quenching phenomenon;abnormal thermal quenching effect1㊀引㊀㊀言白光发光二极管(Light emitting diodes,LED)作为第四代照明光源,在固态照明与显示领域已经得到了长时间的发展与应用[1-13]㊂相比LED,基于激光二极管(Laser diode,LD)芯片的照明技术因其体积小㊁亮度高㊁照射距离远等优点在高功率照明㊁显示和光通讯等众多领域具有广泛的应用前景[14-17]㊂目前,蓝光芯片搭配黄色荧光材料是白光LED/LD的主流实现方案[18],荧光材料作为LD器件的主要组成部分,其性能直接决定了照明器件的品质㊂然而,在激光照明等应用场景中,高功率密度激发会引起荧光材料温度上升,导致发光离子的激发态电子非辐射分布增加[1,19],在150~200ħ的范围内发射强度降低至其初始状态60%~70%以下,即产生显著的热猝灭(Ther-mal quenching,TQ)现象㊂高功率密度激发下温度上升带来的热猝灭行为严重影响着LED/LD用荧光材料的服役稳定性,包括发光强度降低㊁色度漂移㊁发光饱和等一系列问题,从而导致目前已有荧光材料的商业应用受到限制[20]㊂因此,解决荧光材料的热猝灭问题,寻找和开发在高功率密度激发下拥有更优耐热特性的荧光材料以缓解高功率密度激发下热效应带来的不利影响,将成为新的研究热点㊂反常热猝灭效应,即在一定温度范围内,随着工作温度上升,荧光材料的发射强度保持不变或逐渐增加的发光现象㊂在高功率密度激发下,荧光材料的反常热猝灭效应有利于提高材料的发光量子效率和热稳定性,避免由于光转换过程中积累的热量带来的荧光材料运行温度不断升高,最终引起激光照明器件的发光强度达到峰值,并开始骤降的问题;亦可以缓解由于功率增加造成的色光比例改变,导致色温㊁色坐标㊁显色指数发生显著变化的问题,提升高功率密度激发下荧光材料的发光品质㊂自从2017年Kim等[13]发现了一种在200ħ温度下仍能保持室温发射强度100%的蓝光Na3Sc2(PO4)3ʒ0.03Eu2+荧光粉,反常热猝灭荧光材料便受到了广泛关注㊂在高功率密度激发下出现反常热猝灭效应㊁保持优越的发光性能的荧光材料无疑具有非常光明的发展前景㊂本文从材料组分掺杂改性㊁复合结构设计方面概述了近年来反常热猝灭效应机理的研究进展,对几种典型的反常热猝灭体系的结构㊁发光性质及其实际应用进行了详细介绍,并讨论了目前本领域研究中存在的问题及发展趋势,以期可以采用新的方法与角度更好地理解高功率密度激发下荧光材料的反常热猝灭效应,设计开发出新型的无热猝灭或负热猝灭的高效荧光材料,满足其在高功率密度激发照明与显示等领域的应用㊂2㊀反常热猝灭效应机理相关研究一般来说,热猝灭现象与高温工作状态下激活离子激发态和基态能级间的交叉弛豫㊁热离化等过程密切相关[19,21-22]㊂研究表明,较大的电离能(激活剂离子的发射能级和导带底之间的能量差)㊁较大的热猝灭活化能㊁较宽的禁带宽度等条件下更容易抑制热猝灭现象,减少无辐射跃迁过程[23-24]㊂科研人员对于缓解热猝灭效应做出的诸多努力催生了荧光材料中反常热猝灭效应的发现,有效改善了高功率密度激发下荧光材料的发光性能㊂全面分析荧光材料的电子结构和光学性质有助于认识热猝灭现象的形成机制,更深入理解反常热猝灭效应的作用机理,并指导开发热猝灭性能更加良好的新型荧光材料㊂结合存在反常热猝灭效应荧光材料的相关文献报道,增强反常热猝灭效应的工作主要围绕材料组分设计(掺杂改性)和复合结构设计两个途径开展㊂因此,本文对反常热猝灭机理的解释将按照以上两个方面进行归纳总结㊂1460㊀发㊀㊀光㊀㊀学㊀㊀报第42卷2.1㊀荧光材料组分设计目前LED /LD 用稀土荧光材料主要是使用稀土发光离子中属于非禁戒的f-d 电子跃迁的激活剂,包括Eu 2+㊁Ce 3+和Yb 2+㊂由于其5d 轨道裸露在4f 电子层外,极易受到外部环境的影响,因此通过调节基质的晶体结构可以实现荧光材料性能的调节和优化[25]㊂对稀土荧光材料进行离子掺杂或原子取代调整其化学结构组分,调控影响其热稳定性的关键参数,利用不同的作用机制实现反常热猝灭效应㊂目前通过荧光材料组分设计实现反常热猝灭效应的机制可以分为下述5种㊂2.1.1㊀缺陷能级到发光中心激发能级的能量转移对于下转移或下转换发光,其过程是在短波激发下,发光离子的基态电子跃迁至激发态,随后跃迁至基态并产生长波发射㊂然而,在高功率密度激发特别是激光照明应用中,过高的工作温度与过强的激发光泵浦密度使得处于激发态能级的电子二次跃迁至导带上,随后以无辐射跃迁的形式回到基态,造成热猝灭现象㊂图1为荧光材料中典型的缺陷能级向发光中心激发能级能量传递示意图㊂在低温范围内,通过在荧光材料中引入缺陷作为陷阱能级,部分电子被诱导捕获并存储在陷阱能级里㊂热刺激后,被捕获电子从陷阱能级跃出,随后通过导带转移到发光离子的激发态能级从而实现发光过程㊂因此,电子被陷阱能级俘获与电子从陷阱解俘的过程达到动态平衡,此时便出现零猝灭甚至负猝灭现象[26]㊂从陷阱到发光中心发生了有效的能量转移,形式上为发光离子提供了额外的激发能,从图1㊀缺陷能级向发光中心激发能级的能量传递示意图Fig.1㊀Schematic diagram of energy transfer from defect levelto excitation level of emission center而产生更强的发光㊂因此,陷阱能级的深度和浓度成为影响反常热猝灭效应的关键㊂在荧光材料中,充当电子陷阱的缺陷能级可以通过以下方式引入:(1)离子非等价取代引入缺陷作为电子陷阱晶格内部离子半径相近的情况下易发生非等价取代,即高价离子取代低价离子形成正缺陷,或低价离子取代高价离子形成负缺陷㊂而非等价的格点取代导致的电荷不平衡会诱导带电属性相反的缺陷产生,增加电子陷阱深度和数量,在热激活下充当陷阱的晶格缺陷释放载流子,抑制热猝灭现象的出现㊂北京科技大学夏志国教授团队[23]采用Eu 2+离子取代K +离子产生正缺陷Eu ㊃K ,加之制备过程中存在的V ㊃㊃O ,都会诱导负缺陷Vᶄk 的产生,合成的K 2BaCa(PO 4)2ʒ3%Eu 2+蓝光荧光粉在275ħ时TQ 为零㊂如图2所示,结合PBE0杂化泛函的密度泛函(DFT)计算得到的缺陷转变能级与热释光谱的测量结果,推测在零热猝灭的初始上升阶段所涉及的缺陷最有可能是基体材料中的氧空位㊂氧空位作为导带的电子陷阱中心捕获电子,通过能量传递补偿热猝灭效应㊂之后,该团队[27]将Li +掺杂进NaAlSiO 4ʒEu实现了量子效率(QE)的提高㊁光致发光(PL)特性的可调谐和热稳定性的提升,当N ѲASOʒy Li,Eu 中(Ѳ表示V NA )y =0.15时,在150ħ时仍能保持室温条件下94.6%㊂DFT 计算结果表明,Li 倾向的占位为Li Al -2Li VNa ,Li 含量越多,发光热稳定性越高㊂这是由于Li 的相关陷阱(如位于V Na 格点的Li)受热释放出更多电子与Eu 2+重组,传递至Eu 2+的5d 激发态能级㊂兰州大学王育华教授团队[28]采用Eu 2+离子取代K +离子,Sc 3+离子取代Hf 4+离子形成缺陷Eu ㊃K 和ScᶄHf ,进而分别诱导产生负空位缺陷Vᶄk 和正空位缺陷V ㊃㊃O 以保持电中性㊂合成的近紫外和蓝光激发绿光荧光粉K 2HfSi 3O 9ʒ2%Eu 2+,6%Sc 3+在200ħ时仍不存在发光损耗㊂结合25~250ħ的热释光谱和衰减曲线分析,陷阱能级的存在使其与Eu 2+的5d 能级之间发生能量转移㊂之后,该团队[29]采用Ce 3+离子不等价取代Li 2CaSi 2N 4的Ca 2+格点,产生Ce ㊃Ca 和VᵡCa 缺陷㊂合成的Li 2CaSi 2N 4ʒCe 3+荧光粉在200ħ时零热猝㊀第10期张曦月,等:高功率密度激发荧光材料的反常热猝灭效应1461㊀图2㊀(a)KBCPʒ3%Eu 2+的热释光曲线;(b)DFT 计算KBCP 中V K2,3和V O1,2的热力学转变能级示意图[23]㊂Fig.2㊀(a)TL curve and its deconvolutions of KBCPʒ3%Eu 2+.(b)Schematic representation of calculated thermodynamiccharge transition levels for V K2,3and V O1,2in KBCP using the DFT-PBE0method [23].灭㊂在150ħ时,Li 2CaSi 2N 4ʒ0.05Ce 3+在507nm 和557nm 处的发射峰仍然保持初始强度的95%和104%,表现出良好的热稳定性㊂昆明理工大学邱建备教授团队[30]通过在Sr 3SiO 5ʒEu 2+中引入Tm 3+占据Sr 2+格点,Tm 3+的引入产生了一种具有更深陷阱深度的缺陷结构,可以有效地捕获载流子,从而抑制了非辐射过程中声子形式的能量损失㊂热扰动产生的载流子补偿了热猝灭行为,在120ħ内仍零猝灭㊂西北农林科技大学周文明教授团队[31]采用Eu 3+离子取代Ca 2+离子的格点,不平衡的电荷取代导致了空位缺陷(VᵡCa )缺陷和间隙缺陷(Oᵡi )的产生,晶格缺陷作为电子陷阱受热释放载流子,补偿了热猝灭效应㊂合成的红色荧光粉Ca 2InSbO 6ʒEu 3+在207ħ时的发射强度是27ħ时的1.1倍㊂因此,采取非等价取代引入缺陷作为电子陷阱是一种有效的方法㊂然而,过高的非等价取代浓度会对晶格结构产生不利影响㊂同时,缺陷浓度增大也将不可避免地会造成发光湮灭,反而达不到捕获电荷的效果㊂(2)阳离子无序化增加陷阱的深度和数量通过引入阳离子取代晶格中部分初始阳离子的格位,实现一定程度的阳离子无序化,实际上改变了平均离子半径,以调整晶格应变㊂引入阳离子无序化不仅会导致材料结构刚性的变化,通过破坏晶格振动来抑制无辐射过程,而且导致作为电子陷阱的缺陷数量和深度增加㊂在有序化合物中,有序度可以用来表征不同原子在晶格格点中的优先占位情况㊂在固溶体A 1-xB x 中,有序度η根据以下公式计算[32-33]:η=O CC A A -O CC B A =O CC B B -O CC AB ,(1)O CC A A ㊁O CC B A ㊁O CC B B 和O CC AB 表示A 原子和B 原子分别占据A 格点或B 格点㊂刘泉林教授团队[33]计算了在(Ba 1-x Sr x )2SiO 4ʒEu 2+中Sr 2+取代Ba 2+的阳离子有序度,当x 为0.5时,其在150ħ时的发射光强度仍保持在90%以上㊂中国台湾大学刘如熹教授团队[34]通过Ca 0.55Ba 0.45组合取代Sr 1.98Si 5N 8ʒEu 0.02中的Sr 2+,在一定程度上引入阳离子创造无序环境,在25~200ħ工作温度范围内,发光强度增加了20%~26%㊂在此基础上,Kim 等[35]通过在固溶体荧光粉Lu 2.8Ca 0.1Ce 0.1Al 1.8Ba 0.2Al 2.7Si 0.3O 12中掺杂Ba 2+部分取代Al 3+引入阳离子无序效应,将其发光强度提升至商用LuAG ʒCe 3+(Lu 3Al 5O 12ʒCe 3+)的116%㊂引入阳离子无序化可以增加陷阱的深度和数量,有效抑制无辐射过程㊂相比异价离子取代,同价离子取代的浓度可相对较高㊂然而,当引入的阳离子与晶格中初始阳离子半径差值超过一定值时会在晶格中产生杂相,且原子占位的优先级往往不易调控㊂此外,引入阳离子无序化在产生电子陷阱的同时有可能对晶格结构刚性产生负面影响㊂因此,该方法研究相对较少㊂(3)特定温度下的结构相变形成空位等缺陷当阳离子无序化增大到一定阶段时,晶格将产生结构相变㊂随着温度的升高,荧光材料从有序到无序的相变带来的结构差异导致电导率㊁发射强度和缺陷数量都发生变化,从而影响荧光材1462㊀发㊀㊀光㊀㊀学㊀㊀报第42卷料的性能㊂2017年,Kim等[13]将Eu2+离子掺入蓝光荧光粉合成了Na3Sc2(PO4)3ʒ0.03Eu2+,温度升高使得Na+无序化导致了α相ңβ相ңγ相的相变,增加了阳离子空位缺陷,从而形成了作为电子捕获中心的缺陷能级的产生,在200ħ时实现了零猝灭㊂这一过程可通过方程式2Na++Eu2+ңEu㊃Na+VᶄNa进行简单描述㊂这有利于能量从包含电子空穴对的陷阱到Eu2+5d能级的转移,从而补偿非辐射跃迁引起的发射损失,在温度上升时维持发射强度,展示出了零猝灭的性质㊂电子陷阱的深度可以通过如下公式估计:E=T M/500,(2)其中E代表激活能,即陷阱深度,单位为eV;T M代表热释光曲线中峰值对应的温度,单位为K[36]㊂随后,天津理工大学王达健教授团队[37]也对Na3Sc2(PO4)3ʒEu2+荧光材料中出现反常热猝灭效应进行了研究,也得到了升温过程导致相变㊁抑制无辐射跃迁过程的结论㊂荧光材料在特定温度下的结构相变有助于形成空位等缺陷,结构差异会导致作为电子陷阱的缺陷数量增加,有效补偿热猝灭效应㊂然而,研究特定温度下荧光材料的相变对其发光性能的影响相对较少,且研究的材料体系相对单一㊂目前,由于涉及缺陷态的热猝灭现象往往难以通过实验手段进行微观层面上的深度研究,而理论计算可以作为一种深入了解和分析缺陷的辅助手段㊂苏州大学孙洪涛教授团队[38]采用DFT 计算分析了(C9NH20)2SnBr4晶体的能级情况,发现引入Br1和/或Br2空位会在带隙中产生缺陷能级,而单独引入C9NH20空位则不会,这直接导致了在270nm激发下,在-268~25ħ的温度区间内仅加入溴源的(C9NH20)2SnBr4单晶出现负猝灭现象,在25~50ħ的温度区间内热猝灭现象也有明显改善㊂该材料仅在11ħ的室温下即可制备,且展现出优异的抗热猝灭性能,具有较好的应用前景㊂近期,瑞典Linderälv等[39]借助第一性原理计算得到了Ce与氧空位间电荷转移的最低能量路径,从理论层面研究了CeʒYAG中氧空位作为深度缺陷态参与发光热猝灭的复合机制㊂基于密度泛函理论的第一性原理计算可以弥补实验的不足,但是由于稀土离子4f电子具有开壳层特征,当其共掺杂入荧光材料中,会大大增加理论模拟的计算量,因此往往需要经验模型辅助,这导致理论计算存在一定的局限性㊂2.1.2㊀提升晶格结构刚性来抑制无辐射跃迁过程荧光材料的结构刚性是判断材料晶格骨架结构是否稳定的有效指标,尤其是在高功率密度激发下,高结构刚性和晶格对称性的荧光材料有利于降低晶格振动频率,抑制无辐射衰减过程,减少声子损耗㊂影响发光材料的晶格刚性主要包括晶格联通程度㊁化学键健能等㊂此外,依据 尺寸匹配原则 以及 泡利经验式I=1-exp(-Δx2/4) (Δx为泡利电负性差)[40],选取与所替换离子半径差在15%以内并且与氧原子间具有更强键能以及共价性的离子,可有效提升晶格排列紧实程度,抑制极端服役条件下由热量引发的晶格振动,缓解无辐射跃迁效应,提升发光材料的热稳定性能,这使得其在高功率密度激发下往往易出现反常热猝灭效应㊂通过实验和DFT计算得到的德拜温度(ΘD)可以作为衡量晶体结构刚性的关键参数[41-43],荧光材料的高德拜温度对应于低晶格振动频率和小斯托克斯位移[12],这往往会降低无辐射跃迁的可能性,因此德拜温度可以帮助衡量和筛选猝灭性能相对较好的基质材料㊂通过准谐德拜模型可以得到德拜温度(ΘD),可由公式(3)和(4)计算得到[44-45]:ΘD=h kB(6π2V1/2n)1/3f(σ)B s M,(3) f(σ)={32231+σ1-2σ()3/2+131+σ1-σ()3/2[]-1}1/3,(4)其中k B和h分别表示简化后的波尔兹曼常数和普朗克常数,M为原胞的相对分子质量,B s为晶体的绝热体弹模量,n是每个原胞中包含的原子数, V表示原胞的体积,σ是泊松比㊂Brgoch等[46]指出,荧光材料中多面体连通度高的晶格可以有效限制振动自由度,降低声子参与的无辐射弛豫过程,这使得这类荧光材料通常具有良好的猝灭特性㊂基于此,荧光材料中石榴石型㊁UCr4C4型和β-K2SO4型都是结构刚性较优异的结构㊂(1)石榴石型石榴石型矿物结构原型属于立方晶系,空间㊀第10期张曦月,等:高功率密度激发荧光材料的反常热猝灭效应1463㊀群为Ia 3d ㊂其一般公式是A 3B 2C 3O 12,其中A ㊁B 和C 是位于不同对称位置的阳离子㊂A 原子占据了8配位十二面体的24(c)格点,B 原子占据了6配位八面体的16(a)格点,C 原子占据了四配位四面体的24(d)格点㊂每个八面体与6个四面体相连,而每个四面体通过公共角与4个[AlO 6]八面体相连[47-50]㊂正是由于三种不同阳离子格位的存在,使得掺Ce 3+的石榴石可以通过不同阳离子的替代灵活地调整和优化特定应用场景下所需的发光性能㊂作为石榴石的主要体系,YAG 的德拜温度高达726K,这大大降低了无辐射跃迁的概率,也使其保持了较高的量子产率,从而使其在激光领域作为增益介质的基质材料具有广泛应用[51-52]㊂该结构的典型应用将在3.1部分介绍㊂(2)β-K 2SO 4型β-K 2SO 4矿物结构原型属于正交晶系,空间群为Pnam [53]㊂典型的两类包括正硅酸盐A 2SiO 4型(A =Sr,Ba)ʒEu(Eu 取代Sr 或Ba 位)和磷酸盐AB PO 4型(A 是一价阳离子如Na +,K +;B 是二价阳离子如Ca 2+,Sr 2+,Ba 2+)[43,54-55]㊂在AB PO 4型磷酸盐体系中,随着A ㊁B 离子半径的变化而有所不同,其结构也会有所不同(橄榄石结构㊁钾芒硝结构等)㊂针对该体系,苏州大学黄彦林教授团队[54]的研究表明NaSrPO 4的热猝灭温度相较KBaPO 4低了200ħ,作者认为KBaPO 4和NaSrPO 4不同的热稳定性是由于在NaSrPO 4中Eu 2+占据多个Sr 2+格位导致分布在整个晶格上的 高度无序环境 中,而KBaPO 4ʒEu 2+离子单一格位在晶格中具有较高的 有序态 ㊂β-K 2SO 4矿物结构的典型应用将在3.2部分介绍㊂(3)UCr 4C 4型UCr 4C 4矿物结构原型属于四方晶系,空间群为I 4/m ,Cr 和C 相连形成CrC 4四面体,四面体相连构成骨架,U 离子填充在四面体之间㊂其化合物通式可写为Me (A ,B )4X 4,其中Me 为碱金属或碱土金属离子,A 和B 为配位离子㊂[AX 4]和[BX 4]四面体通过共边或共顶点连接形成[001]方向的vierer 环,Me 离子位于其形成的环状结构中,其格位具有高度对称性且致密度k =(AB/X )=1,因此拥有较强的结构刚性[25,56]㊂例如Sr-LiAl 3N 4ʒEu 2+(95%@227ħ)和RbLi(Li 3SiO 4)2ʒEu 2+(103%@150ħ),它们都属于UCr 4C 4型结构[11,57]㊂该结构的典型应用将在3.3部分介绍㊂除上述体系的荧光材料外,科研人员在其他体系中也进行了诸多研究㊂图3㊀(a)石榴石矿物结构模型[58];(b)UCr 4C 4矿物结构模型[59];(c)K 2SO 4矿物结构模型[23]㊂Fig.3㊀(a)Garnet mineral structure model [58].(b)UCr 4C 4mineral structure model [59].(c)K 2SO 4mineral structure model [23].。
利用PPKTP晶体对795nm(Rb D1线)激光进行倍频的研究的开题报告
利用PPKTP晶体对795nm(Rb D1线)激光进行倍频的研究的开题报告一、研究背景在光学领域中，利用半导体激光器产生的基频激光，通过谐波倍频技术可获得高效率、高功率的可见光、紫外光以及红外光等。
其中，利用PPKTP晶体对795nm(Rb D1线)激光进行倍频，可以获得397.5nm紫外光，是用于量子信息、光学制冷、分子荧光探测等领域的重要光源。
因此，对于PPKTP晶体倍频技术的研究具有重要的意义。
二、研究目的本研究的目的是探究PPKTP晶体对795nm(Rb D1线)激光进行倍频的特性。
具体目标如下：1. 测试不同功率的795nm激光在各个温度下的THG能量输出。
2. 研究PPKTP晶体对795nm激光进行倍频的效率与输出功率之间的关系。
3. 研究PPKTP晶体对795nm激光进行倍频的温度特性，掌握其最佳温度范围。
三、研究内容1. PPKTP晶体的制备及样品特性测试。
2. 利用激光调制器调节光脉冲形状及频率。
3. 利用DPSS激光器产生795nm激光，并将其输入到PPKTP晶体中，对比测试其THG能量输出的差异。
4. 探究PPKTP晶体对795nm激光进行倍频的效率与输出功率之间的关系。
5. 研究PPKTP晶体对795nm激光进行倍频的温度特性。
四、研究方法1. 利用快速泵浦脉冲技术制备PPKTP晶体。
2. 通过激光调制器调节光脉冲形状及频率。
3. 利用DPSS激光器产生795nm激光，对比测试其THG能量输出的差异。
4. 利用光栅对795nm激光进行波长调整，获得最佳波长的激光输入到PPKTP晶体中。
5. 通过改变PPKTP晶体的温度来研究倍频效果的温度特性。
五、研究意义1. 对PPKTP晶体倍频技术的方法学进行研究，为提高其倍频效率提供新的思路和途径。
2. 探究PPKTP晶体对795nm激光进行倍频效率与功率的关系，对该技术在实际应用中的优化具有重要意义。
3. 研究PPKTP晶体倍频技术的温度特性，为其在实际应用中的优化提供理论基础。
一种能补偿热效应的高功率端面泵浦Nd_YVO4激光谐振腔的设计
T el:029******* Email:dav idkwan78@收稿日期:20030422一种能补偿热效应的高功率端面泵浦Nd YVO 4激光谐振腔的设计关 俊 陈国夫 程光华 刘 畅 侯 洵(中国科学院西安光学精密机械研究所瞬态光学技术国家重点实验室,西安710068)摘 要 针对激光二极管端面泵浦的Nd Y VO 4全固态激光器,提出了一种利用双晶体,对Nd Y VO 4的热效应进行补偿的方案,同时该方案又能提高最大输出功率,避免由于插入附加光学元件所导致的损耗,满足调Q 以及提高腔内倍频效率的要求 关键词 谐振腔;热效应补偿;双晶体;端面泵浦;Nd Y VO 4;DPSSL中图分类号 TN248.1 文献标识码 A0 引言激光二极管抽运的全固态激光器(DPSSL)由于其效率高、光束质量好、体积小、寿命长等优点,在测量、遥感、数据存储、医学等领域有着广泛的应用 而端面泵浦的DPSSL 以其泵浦光利用光纤耦合时能够实现泵浦源与激光器的有效分离,近年来成为人们研究的热点在众多适合LD 泵浦的激光介质中,Nd Y VO 4晶体由于它的受激发射截面大、吸收系数高、吸收光谱宽、偏振输出等优点而倍受青睐[1]然而Nd Y VO 4晶体的热导率很低,只有YAG 的一半,激光运行时所表现出的强烈的热效应,严重影响了激光器的稳定性和输出光的光束质量,限制了其在较高功率激光器上的应用 因此热效应的影响成了当前亟待解决的问题[2]关于解决热透镜的问题除了设计热稳腔外,还可以对热透镜效应进行补偿[2~4],但以前报道的热效应补偿方法都是通过加入附加的光学元件,增大了损耗降低了输出功率;本文根据几何光学原理,用两块激光晶体产生的热透镜组成共焦系统,能够有效地避免热透镜效应导致的输出功率下降、激光腔的热稳定性差和输出光束质量变差等问题,提出一种既能补偿热透镜效应又能提高最大输出功率的激光腔的设计1 谐振腔的设计与分析1.1 腔的设计本文针对端面泵浦的Nd Y VO 4调Q 、腔内双通倍频激光器进行设计,考虑图1所示的LD 双端泵浦Nd Y VO 4Z 型谐振腔 泵浦光的光路为:LD 1(2)Focusing Optics M 1(M 2);而M 1 L 1 Nd Y VO 4L 2 Nd Y VO 4 L 3 L 4(调Q 晶体) M 3 L 5(倍频晶体) M 4则构成了振荡光路 其中,两块相同的激光晶体相对旋转90!放置(对此将在后面有详细的说明和分析),并且光路中的相应光学元件已经按合适参数镀膜下面以Nd Y VO 4发射波长1064nm 为例,利用传输矩阵对图1所示的谐振腔进行设计和分析:由于调Q 晶体、倍频晶体的光学长度相对于各段光路来说是小量,所以在此忽略它们对传输矩阵的影响图1 LD 端面泵浦Nd Y VO 4Z 型谐振腔Fig.1 Ld end pumped Nd Y V O 4Z cavit yM 1、M 2为平面镜;M 3、M 4为凹面镜,其曲率半径分别为R 3、R 4;M 3的折叠角为 ;两块同样的NdYVO 4晶体的长度为L ;晶体中产生的热透镜焦距的取值由文献[5]中的式(13)计算得到,并且认为热透镜位于晶体的中间且两块晶体中产生的热透镜参数相同 以紧贴M 4的左端面的平面为参考平面,则谐振腔内子午面和弧矢面上,傍轴光线往返一周的变换矩阵为M t =A t B t C t D t =1L 50110-2/(R 3c os)1∀1L 4011L 3011L /2n 0110-1/f t 11L /2n 01∀1L 2011L /2n 0110-1/f t11L /2n11L 101∀第32卷第12期2003年12月光 子 学 报ACTA PHOTONICA SINICAVol.32No.12December 20031L1 011L/2n0110-1/f t11L/2n11L201∀1L/2n 0110-1/f t11L/2n011L311L401∀10 -2/(R3cos )11L50110-2/R41M s=A sB sC sD s=1L50110-2cos /R3)1∀1L4011L3011L/2n0110-1/f t11L/2n01∀1L2011L/2n0110-1/f t11L/2n011L101∀1L1011L/2n0110-1/f t11L/2n011L201∀1L/2n0110-1/f t11L/2n011L3011L401∀10-2cos /R3)11L50110-2/R41首先,利用数值计算并结合实际中易实现的原则选取一组理想的参数:L=5mm,L1=10mm,L2=180,L3+L4=145m m,R3=150mm,R4=50mm;为了实际中易于调整,选取腔定性最为敏感的折叠角 和短臂L5为变量 根据腔的稳定条件:G t<1且G s<1(G i=|D i+A i|/2,i=t和i=s分别对应于子午面和弧矢面的光束) 同时,为了保证较高的倍频效率,还应该使L5上的束腰处(置放倍频晶体的位置)的像散尽量小,为此设置在该处的像散要求:|R t-R s|<0.003mm;|w t-w s|<0.003mm 其中R i=2B i/(D i-A i),w i=2 |B i|/[4-(D i-A i)2]分别为L5上束腰处的子午面和弧矢面内的等相位曲率半径和光斑半径 和L5取值范围分别为:#[0,80!],L5#[0,250mm],做出二者在f t#[140mm,∃]上的三维立体图1.2 腔的稳定性分析在三维图上选取满足对f t#[140mm,∃]都稳定的 值,结合实际选取 =10!,利用数值计算做出L5,f t的稳区图,如图2;为了比较,在其它条件不变的情况下去掉图1所示的右边激光晶体,并做出其L5,f t的稳区图,如图3 比较图2和图3可以看出,利用双激光晶体进行补偿后L5,f t稳区图明显加宽,并且从图2中还可以看出,利用双激晶体进行补偿后,当L5取[105,120]mm上的任何一个值时,腔在热透镜焦距f t[140mm,900]上都是稳定的,这大大提高了腔的热稳定性图2 利用双激光晶进行补偿后的稳区图Fig.2 T he stable zone with compensated by tw in laser crystals图3 没有利用双激光晶体进行补偿(单个激光晶体)的稳区图Fig.3 T he stable zone without compensated by tw in lasercr ystals1.3 倍频效率分析为了保证倍频效率,一般把倍频晶体放在L5臂上的束腰位置,并且使光束在倍频晶体处的像散尽量小,这一点我们在前面的数值计算中已经保证;此外,减小束腰位置的变化量和束腰半径的变化量也是提高倍频效率和激光器稳定性的重要措施;从图4中可以看出,热透镜焦距f t在[140mm,900]上变化时,在利用双激光晶体进行热效应补偿的情况下,L5臂上的束腰位置r20t/r20s(t和s下标分别表示子午面和弧矢面内的参量,下同)的变化量在10mm以下,而采用单块激光晶体时,L5臂上的束腰位置r10t/r10s的变化量则大得多 图5则表明:热透镜焦距f t在[140mm,900]上变化时,利用双激光晶体进行补偿后,L5臂上的束腰半径w20t/w20s变化很小变化率小于14%,特别是在140~700m m范围内w20t/w20s几乎不变;而在此范围内,采用单激光晶体时的w10t/w10s的变化则很大 所有的这些都说明,利用双图4 束腰位置r20t/r20s,r10t/r10s随f t的变化Fig.4 Waist location r20t/r20s,r10t/r10s as a function of f t141912期关俊等.一种能补偿热效应的高功率端面泵浦N d Y V O4激光谐振腔的设计图5 束腰半径w 20t /w 20s ,w 10t /w 10s 随f t 的变化F ig.5 Spot radii w 20t /w 20s ,w 10t /w 10s as a function of f t激光晶体进行补偿后在提高倍频效率上也有较大的优势1.4 输出光束质量分析为了增大散热面积,一般将四方系的Nd Y VO 4晶体切割成m %m %n 的形式,并且采用周边强制冷却的方式;而为了利用Nd Y VO 4的偏振输出特性,通常都是使晶体的四次旋转对称轴(光轴)垂直于光轴放置 这样,由于在振荡光通过的截面内晶体具有各向异性,导致了在相同温度边界条件下在x 与y 方向上有不同的温度梯度,进而导致在x 和y 方向上的热透镜焦距不同,这一点已经由文献[7]证实 所以在利用单激光晶体且没有进行相应补偿的情况下,输出的光束质量较差;而在利用如图1所示的双激光晶体结构时,如图6所示,将两块晶体相对旋转90!放置,其中,s &,和s ∋分别表示平行与光轴面与垂直与光轴面 由于振荡光束在s &面和s ∋面都经历了相同的屈光度(均为1/f t &+1/f t ∋,f t &,f t ∋分别为s &面和s ∋面内的热透镜焦距)所以可以补偿光束的畸变而得到较好的光束质量图6 两激光晶体相对旋转放置示意F ig.6 Relative placement of tw in laser cr ystals2 结论我们提出了一种利用晶体本身的热效应来进行(自补偿),这种补偿有以下几点优势:1)由于随着泵浦功率变化,两晶体内产生的热透镜做同样的变化,这样热透镜的补偿范围(泵浦功率的变化范围)就更宽,腔的热稳定性更好2)由于在光路中不引入导致谐振腔调整困难的透镜以及其它任何附加光学元件,减少了反射和吸收等损耗,提高了效率和输出功率3)由于晶体中的热效应所产生的热应力不能超过Nd Y VO 4的断裂应力,所以单位增益介质上存在最大泵浦功率及输出功率极限,亦即Nd Y VO 4激光器的定标问题[8] 而采用双晶体结构时,在补偿热效应的同时增加了增益介质,减少了每块增益介质上所承担的泵浦能量,所以可以承受总体更高的泵浦能量进而可以获得更高的输出功率极限4)由于光束在连续通过两块相同条件下的激光晶体时,经历了相反的纵向温度梯度,补偿了晶体中的由于纵向分布的温度梯度所导致的热效应;同时,由于振荡光通过两块激光晶体时,在子午面和弧矢面经历了相同的屈光度补偿了由于晶体的热效应横向各向异性造成的椭圆型光斑;所有这些都有利于提高光束质量,这是其他补偿方法很难达到的5)由于Nd Y VO 4为单轴晶体且具有偏振吸收和偏振激发特性,它的热致双折射效应相对于其本身的双折射来说可以忽略,所以Nd Y VO 4晶体的热效应不会产生退偏损耗,因而两块激光晶体之间不需要加入旋转片;而当采用Nd Y AG 做激光晶体时,由于其为立方系晶体且非偏振激发而会产生热致双折射,在采用本文所提出的腔的结构时,不但可以补偿热透镜效应而且参考文献[9]和[10]等分别从理论和实验上已经证明在两块Nd Y AG 晶体之间加入90!旋转片后还可以补偿热致双折射和退偏损耗通过数值模拟,证实了这种腔结构设计的优势与可行性,同时也为同类激光器的设计提供了参考 参考文献1 白晋涛,张振杰,武自录,等 用于飞秒紫外激光产生的L D 泵浦高效Nd YV O 4绿光激光器研究 光子学报,2000,29(11):1053~1055Bai J T ,Zhang Z J,Wu Z L,et al A cta Phontonica Sinaica ,2000,29(11):1053~10552 尹丽娜,陈莹,陈檬,等 大功率L D 端抽运N d Y A G Z 型腔内热效应补偿的研究 中国激光,2002,A29(8):673~676Y in L N ,Chen Y,Chen M ,et al Chinese Jour nal ofLasers ,2002,A29(8):673~6763 高颖,黄维铃,刘耀兰,等 固体激光器热透镜焦距的自适应补偿 中国激光,1999,A26(3):205~208G ao Y,Huang W L ,Liu Y L ,et al Chinese Jour nal of Laser s ,1999,A 26(3):205~2084 张光寅,宋峰,冯衍,等 可自适应补偿热透镜效应的固体激光谐振腔 物理学报,2000,49(8):1495~1498Zhang G Y,Song F ,F eng Y ,et al A cta Physica Sinica ,2000,49(8):1495~14985Innocenzi M E,Yur a H T ,F incher L ,et al.T her mal modeling of cont inuous w ave end pumped solid stat lasers.A pp l Phy s Lett ,1990,56(19):1831~18336Walter K Solid state laser eng ineering New Yor k:1420光 子 学 报32卷Spr ing er Verlag,19997 郑朝思,胡企铨 半导体激光泵浦各向异性介质的热效应 中国激光,1997,24(8):679~683Zheng C S,Hu Q Q Chinese Jour nal of L aser s ,1997,24(8):679~6838P eng Xiaoyuan,Xu L,Asundi A,et al Pow er scaling of diode pumped Nd Y VO 4lasers.IEEE JQ uantumElectronics ,2002,38(9):1291~12999Giunliani G ,Paola R.Polarization flip cavities:A new appr oach to laser resonators Op tics Co mmunications ,1980,35(1):109~11210 Y asui K.Efficient and stable operation of a hig h brightnesscw 500W Nd:YAG rod laser.A p p l Op tics ,1996,35(15):2566~2569Design of Thermal Effect Compensation Resonator for a Sort of High powerEnd pumped Nd Y VO 4LaserGuan Jun,Chen Guofu,Cheng Guanghua,Liu Chang,H ou XunS tate K ey L aborator y of T ransient Op tics T echnology ,X i ∗an I nstitute of Op tics and Pr ecision Mechanics ,Chinese A cademy of Sciences ,X i ∗an 710068,P.R.ChinaR eceived date:20030422Abstract For diode end pumped Nd YVO 4solid state laser,a scheme employ ing twin laser crystals tocompensate thermal effects is brought forw ard.At the same time laser max imum output can be enhanced,and the loss resulting from additional optical elem ents can be avoided,Q sw itching and efficient frequency doubling can be met in this scheme.Keywords Resonator;Thermal effect compensation;Tw in laser crystals;End pum ped;Nd Y VO 4;DPSSLGuan Jun w as born in 1978,in Zhumadian,Henan Province.H e received the B.S deg ree in M echanical Eng ineering from Xi ∗an Jiaotong University .Now ,he is pursuing his M.S.degree directing by Prof.Hou Xun(Academician of CAS)and Prof.Cheng Guofu in Xi ∗an Institute ofOptics and Precision M echanics .His current interest is in solid state laser.142112期关俊等.一种能补偿热效应的高功率端面泵浦N d Y V O 4激光谐振腔的设计。
灯饰产品及行业术语中英文对照表
灯饰行业及产品中英对照表accent lighting 重点照明acting area (spot) lighting 舞台前台（聚光)照明activated electrode 激活电极activated phosphor 激活荧光粉additional exposure 辅助曝光additional lighting 辅助照明adiabatic 绝热的adjustable floodlight effect 可调节的泛光照明效果adjustable pressure conveyor 调压输送机adjustable spot lamp 可调聚光灯adjuster nuts 调节器adjusting 调整adjusting chromaticity 调整色度adjusting chromaticity/adjusting luminance 调整亮度adjusting cursor blink rate 调整光标闪烁速度adjustment for illumination 照明调节/照度调整advertising lighting 广告照明aged lamp 已老化的灯alarm indicator WBL 告警灯alight 发光的灯amalgam fluorescent lamp 汞齐荧光灯angle of approach light 机场着陆指示灯annealing lamp 炼韧灯anti—glare 防眩光apex 顶点approach lighting fitting 着陆照明灯具arc lamp 弧光灯arc light 弧光/弧光灯arc lighting 弧光照明area floodlighting 大面积泛光照明area light 面积光源/区域光源area lights and shadows 面积光和阴影area of illumination 受照面artificial daylight 人造昼光artificial lamp/craft lamp/craftwork lamp 工艺灯artistic lighting 艺术照明base 灯座battery light kit 电池式灯具big space大空间照明bracket light，wall—mounted 壁灯brass 黄铜的brass/brassiness 黄铜/黄铜制品brassily 黄铜的brazen 黄铜制的built-in electronic ballast内置电源bulb socket tag 灯泡灯座片bulb/lamp bulb 灯泡bulb's lifetime 灯泡寿命candle lamp 蜡烛灯ceiling lamp 吸顶灯/半吸顶灯ceiling light 天花灯Christmas lamp 圣诞灯circuit board 电路板cold cathode 冷阴极color mixer混色器color rendering 演色性color temperature 色温color wash light 颜色渐变compound light lamp 复光灯conditioning signal调光信号control signal 控制信号control unit 控制元件courtyard lighting 庭院灯daylight lamp/fluorescent lamp 日光灯/荧光灯decoration bulb 装饰灯decorative lighting 装饰灯具dimension 尺寸dimensions 外观规格dimensionality 维度dimmer 调光器diode 二极管direct glare 直接眩光/直射direct illumination 直接照明direct light ray 直接光线directive lighting 指示性照明direct-current Generators 直流发动机discharge lamps气体效电灯dissociation 分解double coil lamp 双绕灯丝灯泡down light 大堂射灯electric board 调节电控板electric light/electric lamp 电灯electric—discharge lamp 放电灯electric(al）input interface 电控输入端electronic senor light 电子感应灯electronic feeder unit 电子馈电元件emergency lamp 应急灯end mark/end of file mark 结束标记end of tape marker 带末端标记energy saving lamp/ESL 节能灯engineering Lamp 工程灯environmental protection lamp 环保灯explosion—proof lamp/explosion-proof luminaries 防爆灯exposed conductor 外露导电体Exposing Lamp 夜灯/曝光灯extra—high voltage trigger超高压触发器filament bulb 白炽灯泡filament image 灯丝象filament saturation 灯丝饱和firework lamp 烟花灯flash rate 闪光频率flashing amber 闪光器flood lighting vehicle 照明车floodlight 泛光体/泛光灯floor lamp/standard lamp 落地灯flower lamp 花灯fluorescent lamp 荧光灯/日光灯fluorescent lamp holders荧光灯/日光灯灯头fluorescent light fixtures 荧光灯支架fluorescent lighting fixture 日光灯支架focus lamp/spotlight 聚光灯fog light tell-tale 雾灯信号灯fog-proof light 防雾灯fragrance Lamp 香熏灯frame lamp 架子灯frosted bulb 磨砂灯泡gas discharge lamp 气体放电灯gas incandescent lamp 充气白炽灯gas-filled lamp 充气灯glare 眩光grassplot lamp/green ground lamp/ lawn lamp 草坪灯green ground lamp/grassplot lamp 草地灯green light 绿灯ground buried light 埋地灯guest room lamp 客房灯HI beam （远光)大灯high-efficient energy—saving reflective lamp chassis 高效节能反射灯盘highlight strength 反光光强high-pole lamp 高杆灯hose lamp 软管灯illuminant color/Glow Colors 发光颜色/光源色illumination 照明/照明度/照度illumination area 照明面积illumination coefficient 光照系数illumination distance 光照距离illumination time 光照时间incandescence/incandescent lamp白炽灯incandescent arc lamp 白炽弧光灯incandescent bulb/incandescent light bulbs 白炽灯泡inductive ＆electric 电感式、电子式infrared 红外线的infrared lamp 红外线灯input power 输入功率input power control 输入电源控制input resistance 输入电阻input voltage 输入电压input work 输入功intensity/luminous intensity/radiant intensity/I 光强度/发光强intensity of light光的强度invisible Light 不可见光Iodine gallium light 碘镓灯Iodine tungsten lamp 碘钨灯irradiance 光照度/颜色kilowatt 千瓦lamp 电灯/人工光源lamp black 灯黑/灯烟lamp box 灯箱lamp bracket 车灯架lamp bracket 灯具支架/光管支架lamp cap/a socket for a light bulb/a burner/lamp holder/bulb holder 管帽/灯头/灯泡头lamp characteristics 灯质lamp condenser lens 光源聚光透镜lamp cover 灯罩lighthouse tube 灯塔管lighting copper fitting 灯饰铜配件lighting crystal fitting 灯饰水晶配件lighting effect 光照效果lighting equipment 灯饰设备lighting fittings/light fittings 灯饰配件lighting fixture 照明器材Luminance 辉度单位cd/m2luminance efficiency 发光效率单位：lm/wluminance measurement grid 照度计算网格luminance uniformity 亮度均匀度magenta 红紫色manifest 船单manufacturing engineer 制造工程师maple 淡棕色marble 大理石marble lamp 石艺灯marble stone lamp 云石灯mercury lamp 水银灯mercury lamp 汞灯metal halide 金属卤素灯metal halide lamp 金属卤化物灯Metal-clad cables 包覆金属电缆metallic reflection 金属反射metallic reflector 金属反射器miniature Edison screw—cap/small Edison screw-cap 小型爱迪生螺旋灯头minimal arc distance 最小电弧距离minimize 成极小minimum detectable partial pressure 最小可检分压强minimum flow-rate 最小流量minimum freeboard 最小干舷minimum load operation 最小负荷操作minimum operating speed 最低工作转速minimum order quantity 起订量/最小订单量minimum quantity 最小数量minimum thermometer 最低温度计/最低温度表minimum turning diameter test 最小转弯直径试验minimum variance estimation 最小方差估计minor 次要/局部mirror front lamp 镜前灯mosquito killer lamp 灭蚊灯mother board 母板motion picture lamp 动感画灯Motor Elements and Power Supply 电机电器及电源供应MOV 贴片压敏电阻Movable light—source 可移动光源MP，PM 最大输出功率narrow gap one—side automatic welding 窄间隙单面自动电弧natatorium lamp 游泳池灯具National Synchrotron Light Source 国家同步幅射光源natural vibration 自动振动Navigation tree 导航树navy blue/oxfordnecking down 缩口needle 针阀neon bulb 氖灯泡Neon lamp 氖灯/霓虹灯neon lamp/neon light/neon sign 霓虹灯NEON SIGN 氖灯parallel connection 并联potentiometer 电位计，分压计power factor 功率因数power suppliers 电源lamp cup 灯杯lamp disc/lamp house 灯盘/灯罩lamp driver 灯驱动器lamp embryo 灯胚lamp fittings 灯具配件lamp holder 灯头lamp holder switch 灯头开关lamp holder/lamp jack/lamp base/lamp cap/socket pin/cap 灯座/管座/灯头/灯泡头/管帽lamp housing 灯壳lamp oil 灯油lamp pole 灯杆lamp ring 灯圈lamp scale 灯标度lamp seat/lamp carrier 灯座lamp shielding angle 电灯遮光角lamp switch 灯开关/电灯开关lamp test 灯测试lamp-house's power 光源功率lamp—house’s type/form/style/mode 光源类型/光源形式lamps and lanterns 灯具lampshade paper 灯罩纸lamp—stand 灯台landscape lamp/landscape lighting 景观灯/观景灯landscape lighting 景观照明lawn lamp 草坪灯/草地灯LDPE 低密度聚乙烯lead 导线/铅lead wire 导线lead-in 引入线LED 发光二极管led cover LED灯罩Light and radiation 光及幅射light beacon 灯桩light beam 光束light central height 光中心高度light centre length 发光中心强度light color 光色LIGHT DEVICE OF PIT INSPECTION 底坑检修照明装置Light Emitting Diode display 发光二极管显示light fillet weld 轻填角焊接light filter 滤光器/滤光片light flux meter 光通量计light guide 光导管/光导纤维/光制导light guide cap 光导罩light intensity 光强度light loss factor/LLF/maintenance factor 光损失系数light pen 光笔light scantling vessel 轻构船light shield 遮光罩light source filter 光源滤光镜light switch 照明开关light tender 灯塔补给船light tone光谱分布图light wave 光波light-fixture 灯饰lighthouse due 灯塔税1.How are you doing?(你好吗?）2。
灯饰产品及其行业术语中英文对照表
metal halide lamp金属卤化物灯
Metal-clad cables包覆金属电缆
metallic reflection金属反射
metallic reflector金属反射器
miniature Edison screw-cap/small Edison screw-cap小型爱迪生螺旋灯头
brassily黄铜的
brazen黄铜制的
built-in electronic ballast内置电源
bulb socket tag灯泡灯座片
bulb/lamp bulb灯泡
bulb's lifetime灯泡寿命
candle lamp蜡烛灯
ceiling lamp吸顶灯/半吸顶灯
ceiling light天花灯
dimensionality维度
dimmer调光器
diode二极管
direct glare直接眩光/直射
direct illumination直接照明
direct light ray直接光线
directive lighting指示性照明
direct-current Generators直流发动机
discharge lamps气体效电灯
arc lamp弧光灯
arc light弧光/弧光灯
arc lighting弧光照明
area floodlightt面积光源/区域光源
area lights and shadows面积光和阴影
area of illumination受照面
artificial daylight人造昼光
control signal控制信号
ML101J25中文资料
MITSUBISHI ELECTRIC
(1/3)
As of Nov. ‘04
元器件交易网
OUTLINE DRAWINGS
ML101J24
MITSUBISHI LASER DIODES
ML1XX24 SERIES
FOR OPTICAL INFORMATION SYSTEMS
Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights of third-party owners resulting from such use. 3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an authorized dealer. 4. Every possible effort has been made to ensure that the information described in these materials is fully accurate. However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. 5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the propriety of application. 6. The products described in these materials, with the exception of special mention concerning use and reliability, have been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric or an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer.
昂宝-OB2535规格书
MBr i d e ch n ol o gy Co .,Lt d .OB2535High Precision CC/CV Primary-Side PWM Power SwitchGENERAL DESCRIPTIONOB2535 is a high performance offline PWM Power switch for low power AC/DC charger and adaptor applications. It operates in primary-side sensing and regulation. Consequently, opto-coupler and TL431 could be eliminated. Proprietary Constant Voltage (CV) and Constant Current (CC) control is integrated as shown in the figure below.In CC control, the current and output power setting can be adjusted externally by the sense resistor Rs at CS pin. In CV control, multi-mode operations are utilized to achieve high performance and high efficiency. In addition, good load regulation is achieved by the built-in cable drop compensation. Device operates in PFM in CC mode as well at large load condition and it operates in PWM with frequency reduction at light/medium load.OB2535 offers power on soft start control and protection coverage with auto-recovery features including Cycle-by-Cycle current limiting, VDD OVP, VDD clamp and UVLO. Excellent EMI performance is achieved with On-Bright proprietary frequency shuffling technique.High precision constant voltage (CV) and constant current (CC) can be achieved by OB2535. .Fig.1. Typical CC/CV CurveFEATURES5% Constant Voltage Regulation, 5% ConstantCurrent Regulation at Universal AC input Primary-side Sensing and Regulation WithoutTL431 and Opto-couplerProgrammable CV and CC RegulationAdjustable Constant Current and Output PowerSettingBuilt-in Secondary Constant Current Controlwith Primary Side FeedbackBuilt-in Adaptive Current Peak Regulation Built-in Primary winding inductancecompensationProgrammable Cable drop Compensation Power on Soft-startBuilt-in Leading Edge Blanking (LEB) Cycle-by-Cycle Current LimitingVDD Under Voltage Lockout with Hysteresis(UVLO) VDD OVP VDD ClampAPPLICATIONSLow Power AC/DC offline SMPS for Cell Phone ChargerDigital Cameras Charger Small Power AdaptorAuxiliary Power for PC, TV etc. Linear Regulator/RCC ReplacementOB2535 is offered in SOP8 package.TYPICAL APPLICATIONM icr oBge Te ch n ol o gy Co .,Lt d .OB2535High Precision CC/CV Primary-Side PWM Power SwitchGENERAL INFORMATIONPin ConfigurationThe pin map is shown as below for SOP8VDD COMP INVCSGND GNDOrdering Information Part Number Description OB2535CP SOP8, Pb-free, Tube OB2535CPA SOP8, Pb-free, T&RPackage Dissipation Rating Package R θJA (℃/W) SOP8 90Note: Drain Pin Connected 100mm 2 PCB copper clad.Absolute Maximum RatingsParameter Value Drain Voltage (off state) -0.3V to Bvdss VDD Voltage -0.3 to V DD _clamp VDD Zener Clamp Continuous Current 10 mA COMP Voltage -0.3 to 7V CS Input Voltage -0.3 to 7V INV Input Voltage -0.3 to 7V Min/Max Operating Junction Temperature T J -20 to 150 o C Min/Max Storage Temperature T stg -55 to 150 o C Lead Temperature (Soldering, 10secs) 260 o CNote: Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability.M ic r oBr id ge Te ch nol o gy Co .,Lt d .OB2535High Precision CC/CV Primary-Side PWM Power SwitchMarking InformationOB2535CP YWWSC:SOP8 Package P:Pb-free Package Y:Year Code(0-9)WW:Week Code(01-52)S:Internal Code(Optional)TERMINAL ASSIGNMENTSPin Num Pin Name I/O Description 1 VDD P Power Supply 2 COMP I Loop Compensation for CV Stability3 INV I The voltage feedback from auxiliary winding. Connected to resistor dividerfrom auxiliary winding reflecting output voltage. PWM duty cycle isdetermined by EA output and current sense signal at pin 4.4 CS I Current sense input5/6 DRAIN OHV MOSFET Drain Pin. The Drain pin is connected to the primary lead ofthe transformer7/8 GND P GroundOUTPUT POWER TABLE230VAC±15% 85-264VAC Product Adapter 1 Adapter 1OB2535 6W 5WNotes:1.Maximum practical continuous power in an Adapter design with sufficient drain pattern as a heat sink, at 50℃ ambient.M ic r oBr i d geBLOCK DIAGRAMM ic r oBr i d ge Te ch n ol o gy Co .,Lt d .ELECTRICAL CHARACTERISTICS(T A = 25O C, VDD=VDDG=16V, if not otherwise noted)Symbol Parameter Test Conditions Min Typ Max UnitSupply Voltage (VDD) Section I DD ST Standby Current VDD=13V5 20uA I DD op Operation CurrentOperation supply current INV=2V, CS=0V,VDD=VDDG=20V- 2.5 3.5 mAUVLO(ON) VDD Under Voltage Lockout Enter VDD falling 7.5 8.5 10V UVLO(OFF) VDD Under Voltage Lockout Exit VDD rsing13.5 14.5 16.0V V DD _clamp Maximum VDD operationvoltageI DD =10mA30.5 32.5 34．5V OVPOver voltage protection ThresholdRamp VDD until gate shut down27.5 29.5 31.5V Current Sense Input SectionTLEB LEB time540 ns Vth_oc Over current threshold870 900 930 mVTd_oc OCP Propagation delay150 ns Z SENSE _IN Input Impedance50 KohmT_ssSoft start time10msFrequency SectionFreq_Max Note 1 IC Maximum frequency66 72 78 KHzFreq_NomSystem Nominal switch frequency60KHzFreq_startup INV =0V, Comp =5V 14 KHz △f/FreqFrequency shuffling range+/-4% Error Amplifier section Vref_EA Reference voltage for EA 1.972 2.03 V GainDC gain of EA60 dB I_COMP_MAXMax. Cable compensationcurrentINV=2V, Comp=0V42uAPower MOSFET Section BVdss MOSFET Drain-Source Breakdown Voltage 600 V RdsonOn ResistanceStatic, Id=0.4A1215ΏNote:1. Freq_Max indicates IC internal maximum clock frequency. In system application, the maximum operation frequency of 60Khz nominal occurs at maximum output power or the transition point from CV to CC.M ic r oBr i d g e T en t CHARACTERIZATION PLOTSM ic r oBr i d ge Te c.,Lt d .OPERATION DESCRIPTIONOB2535 is a cost effective PWM power switch optimized for off-line low power AC/DC applications including battery chargers and adaptors. It operates in primary side sensing and regulation, thus opto-coupler and TL431 are not required. Proprietary built-in CV and CC control can achieve high precision CC/CV control meeting most adaptor and charger application requirements.z Startup Current and Start up ControlStartup current of OB2535 is designed to be very low so that VDD could be charged up above UVLO threshold and starts up quickly. A large value startup resistor can therefore be used to minimize the power loss in application.z Operating CurrentThe Operating current of OB2535 is as low as 2.5mA. Good efficiency is achieved with the low operating current together with ‘Muti-mode’ control features.z Soft StartOB2535 features an internal soft start to minimize the component electrical over-stress during power on startup. As soon as VDD reaches UVLO (OFF), the control algorithm will ramp peak current voltage threshold gradually from nearly zero to normal setting of 0.90V. Every restart is a soft start.z CC/CV OperationOB2535 is designed to produce good CC/CV control characteristic as shown in the Fig. 1.In charger applications, a discharged battery charging starts in the CC portion of the curve until it is nearly full charged and smoothly switches to operate in CV portion of the curve.In an AC/DC adapter, the normal operation occurs only on the CV portion of the curve. The CC portion provides output current limiting. In CV operation, the output voltage is regulated through the primary side control. In CC operation mode, OB2535 will regulate the output current constant regardless of the output voltage drop.z Principle of OperationTo support OB2535 proprietary CC/CV control, system needs to be designed in DCM mode for flyback system (Refer to Typical Application Diagram on page1).In the DCM flyback converter, the output voltage can be sensed via the auxiliary winding. During MOSFET turn-on time, the load current is supplied from the output filter capacitor Co. The current inthe primary winding ramps up. When MOSFET turns off, the primary current transfers to the secondary at the amplitude ofP SPS I N N I ⋅=（1） The auxiliary voltage reflects the output voltage as shown in fig.2 and it is given by)(V V N N V O SAUXAUX Δ+⋅=(2) Where ΔV indicates the drop voltage of the output Diode.Fig.2. Auxiliary voltage waveformVia a resistor divider connected between the auxiliary winding and INV (pin 3), the auxiliary voltage is sampled at the end of the de-magnetization and it is hold until the next sampling. The sampled voltage is compared with Vref (2.0V) and the error is amplified. The error amplifier output COMP reflects the load condition and controls the PWM switching frequency to regulate the output voltage, thus constant output voltage can be achieved.When sampled voltage is below Vref and the error amplifier output COMP reaches its maximum, the switching frequency is controlled by the sampled voltage thus the output voltage to regulate the output current, thus the constant output current can be achieved.z Adjustable CC point and Output PowerIn OB2535, the CC point and maximumoutput power can be externally adjusted by external current sense resistor Rs at CS pin as illustrated in Typical Application Diagram. The output power is adjusted through CC point change. The larger Rs, the smaller CC point is, and the smaller output power becomes, and vice versa as shown in Fig.3.M ic r oBr i d ge Te ch n ol o gy Co .,Lt d .Fig.3 Adjustable output power by changing Rsz Operation switching frequencyThe switching frequency of OB2535 is adaptively controlled according to the load conditions and the operation modes. No external frequency setting components are required. The operation switching frequency at maximum output power is set to 60K Hz internally.For flyback operating in DCM, The maximum output power is given by221pSW P MAX I F L Po =(3) Where Lp indicate the inductance of primary winding and Ip is the peak current of primary winding.Refer to the equation 3, the change of the primary winding inductance results in the change of the maximum output power and the constant output current in CC mode. To compensate the change from variations of primary winding inductance, the switching frequency is locked by an internal loop such that the switching frequency isDemagSW T F 21=(4)Since T Demag is inversely proportional to the inductance, as a result, the product Lp and fsw is constant, thus the maximum output power and constant current in CC mode will not change as primary winding inductance changes. Up to +/-10% variation of the primary winding inductance can be compensated.z Frequency shuffling for EMI improvement The frequency shuffling (switching frequency modulation) is implemented in OB2535. The oscillation frequency is modulated so that the tone energy is spread out. The spread spectrum minimizes the conduction band EMI and therefore eases the system design.z Gate DriveThe internal power MOSFET in OB2535 is driven by a dedicated gate driver for power switch control. Too weak the gate drive strength results in higher conduction and switch loss of MOSFET while too strong gate drive compromises EMI.A good tradeoff is achieved through the built-in totem pole gate design with right output strength control.z Programmable Cable drop CompensationIn OB2535, cable drop compensation is implemented to achieve good load regulation. An offset voltage is generated at INV by an internal current flowing into the resister divider. The current is inversely proportional to the voltage across pin COMP, as a result, it is inversely proportional to the output load current, thus the drop due to the cable loss can be compensated. As the load current decreases from full-load to no-load, the offset voltage at INV will increase. It can also be programmed by adjusting the resistance of the divider to compensate the drop for various cable lines used.z Protection ControlGood power supply system reliability is achieved with its rich protection features including Cycle-by-Cycle current limiting (OCP), VDD clamp, Power on Soft Start, and Under Voltage Lockout on VDD (UVLO).VDD is supplied by transformer auxiliary winding output. The output of OB2535 is shut down when VDD drops below UVLO (ON) limit and Switcher enters power on start-up sequence thereafter.M ic r oBr i d ge Te ch n ol o gy Co .,Lt d .PACKAGE MECHANICAL DATADimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 1.350 1.750 0.053 0.069 A1 0.050 0.250 0.002 0.010 A2 1.250 1.650 0.049 0.065 b 0.310 0.510 0.012 0.020 c 0.170 0.250 0.006 0.010D 4.700 5.150 0.185 0.203E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270 (BSC) 0.05 (BSC)L 0.400 1.270 0.016 0.050 θ 0º 8º 0º 8º。
Tektronix 电能效率技术白皮书说明书
Testing Energy Efficient DesignsPower ConsumptionWith power conversion efficiencies now reaching into the 90% range, additional increases are becoming difficult to realize. As conversion efficiencies plateau, attention has turned to minimizing power consumption within the embedded system. One pathway to reduce power consumption is to improve the energy efficiency of each function within the design. One of the biggest consumers of energy in many electronics is the display. New display technologies that use LEDs for backlight have provided significant energy savings. Techniques to minimize power consumption during signal transmission is another example.System-level energy management reduces power consumption further by exploiting idle times in system operation to reduce performance of digital systems, thereby saving energy. These energy management techniques are now readily available for microprocessors and other processing elements, as well as for communications buses. The latest specifications for standards like PCI Express®, Low Power DDR, MIPI® D-PHY and M-PHY, USB 3.0, Mobile PCI Express® Module (MXM) and others provide for low power modes.Validating, debugging and characterizing today’s energy efficient designs at times requires new and different test methodologies. The following sections will take a closer look at these changes.Component-Level Optimization of Power ConsumptionLow Voltage Differential SignalingTo lower power dissipation during signal transmission, Low Voltage Differential Signaling (LVDS) is a popular technique, used extensively in communication networks, computers, medical, automotive, and industrial applications. Traditionally, transmission speeds were increased by lowering the load impedance and increasing the logic device’sdrive current, allowing the driver to overcome the loading effects of parasitic capacitance and inductance and switch states faster.As design engineers have dealt with the challenge of reducing power consumption while increasing transmission speeds, LVDS has become common, especially for data rates from a few tens of MHz to about 5 Gb/s. LVDS provides several benefits:Good noise immunity with low voltages.One of the simplest ways to improve the noise immunity of digital circuits is to use higher voltage signaling. In terms of signal to noise ratio, the large voltage swings of RS-232, CMOS, and TTL logic are one way to decrease the susceptibility to a given level of ambient noise. However, driven by low-power requirements, especially in battery-powered designs, many circuits need to operate on lower and lower power supply voltages, but without sacrificing product performance or reliability. Differential mode signaling, used in standards such as RS-422, RS-485, CAN, and FlexRay, can provide very good common-mode noise immunity with substantially lower voltage swings. LVDS uses a small-swing differential signal with low power consumption and excellent noise immunity.Low Electro-Magnetic Interference (EMI) when operating at high speeds.The need to limit or reduce EMI also drives the trend to lower-voltage power supplies, since the electric field strength is proportional to the voltage swing. The bandwidth of the interference can also be reduced by controlling rise- and fall-times of the signals. Finally, EMI can be controlled with shielding. Differential signaling, such as with LVDS, typically uses much lower voltage swings than most single-ended logic families. Edge speeds are also usually limited. The signal pairs, carrying equal signal currents in opposite directions, are routed in parallel on the circuit board or over twisted pair cables, limiting the far-field interference.High performance at low cost.Rising product complexity and density increase the need for simple, low-cost circuit implementations while providing high system performance. LVDS enables simple circuit i mplementation w ith a s ingle-resistor l oad t ermination and DC coupling. And, because the signal current is always on, being steered between the differential lines, the power distribution circuitry can be simpler than that required for circuits with large voltage switching transients.PrimerSingle-ended vs. Differential SignalingSingle-ended data transmission uses one signal line for each information channel and a common ground return path. Single-ended receivers interpret the signal’s logical state based upon the voltage of the input signal relative to ground. The main disadvantage of this technique is its relatively poor noise performance caused by noise coupling into the input signal and the noise on the common “ground” reference.Differential signaling uses a pair of equal and opposite signals to transmit a digital signal, labeled V + and V - in Figure 14. The simplified LVDS circuit shown in Figure 15 shows how switching devices in the transmitter switch the 3.5 mA current source through the terminating resistor in one direction or the other. Since the receiving comparator has a high input impedance, the entire current flows through the termination resistor R T (typically 100 Ω) resulting in a ±350 mV voltage at the receiver inputs. This circuit delivers approximately 1.2 mW of power to the load.The LVDS receiver measures the voltage difference (V + - V - ) between the signals and then compares the resulting voltage difference signal to a threshold of 0 V ±100 mV over a common mode voltage range from 0 V to 2.4 V , providingexcellent noise margins and common-mode rejection. Because differential signals can be routed together, they are generally exposed to the same noise sources. By taking the difference between the two input voltages, the receiver cancels common-mode noise from the desired signal.Differential circuits also radiate substantially less noise than single-ended circuits, since the constant current source is always on, eliminating the on/off switching spikes and the resulting EMI from high-current transistors. The signalamplitudes are also small, and the tightly-coupled conductors minimize the amount of radiated electromagnetic noise.Finally, common-mode current circulating through the signal return path is minimized, so conducted noise is also lower.Figure 14. Differential signaling.Figure 15. Simplified LVDS differential transmitter/receiver schematic.V + 1 0 1V -Testing Energy Efficient DesignsProbing Differential SignalsBecause information is encoded in the mathematical difference between two physical-layer signals rather than simply the voltage of a signal relative to ground, a different measurement technique is required than for single-ended digital logic.It is possible to measure a differential signal by making ground-referenced measurements to the two signals, and then mathematically calculating the difference. This technique requires careful matching of probe and oscilloscope channel gains, voltage offsets, propagation delays, and risetimes / bandwidths. Any differences can result in errors in amplitude and timing of the difference signal.A more accurate and reliable method is to use an active differential probe. A differential probe places a difference amplifier out near the probe tips and the voltage difference is transmitted to the oscilloscope. Since there is only a single oscilloscope connection per channel, differential probes can double the number of signals measured by the oscilloscope.Figure 16 shows the probing of V + and V - signals withground-referenced TAP1500 single-ended active probes on channels 1 (yellow) and 2 (cyan), and the differential signal, measured with a TDP1000 active differential probe, on channel 3 (magenta).Low-power digital technologies such as LVDS meetmany of the application requirements for high-speed data communication in modern product design, enabling needed reductions in product size, cost, and power consumption. These technologies, however, require careful consideration to determine the best measurement approach. Differential signaling is easily addressed with specially-designed differential probes, for example the Tektronix TDP Series, which enable the accurate measurement of LVDS signals without requiring manual adjustment for signal path differences.LED Backlights for Liquid Crystal DisplaysOne of the most significant improvements in Liquid Crystal Display (LCD) technologies is the use of Light Emitting Diode (LED) backlights to reduce power consumption among other benefits. Backlights are used to illuminate the LCD panel, either from the side, top, or back of the panel.Until recently, the majority of LCD displays used Cold Cathode Fluorescent Lamp (CCFL) backlights. For these designs, a typical display system includes a power inverter circuit to produce a high AC voltage, initially in the thousands of volts to strike an arc. The power supply then provides a voltage in the range of a few hundred volts to continue the current flow through the lamp’s gas, which emits ultraviolet (UV) light. This UV energy is absorbed by the bulb's fluorescent coating, which re-radiates the energy as visible light.In contrast, an LED backlight uses parallel rows of series-connected LEDs as the light source. For high-fidelity displays, the white backlights may consist of red, green, and blue (RGB) LEDs. For lower-performance applications, the white light can be generated with UV LEDs encapsulated with phosphorous, which re-radiates white light, or with blue LEDs and a color filter.Figure 16.MSO4000 Series oscilloscope display of LVDS clock signals.PrimerLED backlights provide a number of significant advantages over CCFL backlights, including:Thinner, lighter-weight LCD displays.LEDs are often smaller than their CCFL counterparts, enabling the use of thinner light guide plates or diffusers. This can result in a significant reduction in display thickness and mass.Higher resistance to mechanical shock and vibration. CCFLs are glass tubes and vibration can significantly reduce the life expectancy of the devices.Reduced power consumption.Although the luminous efficacy (measured in lumens/Watt) of LED and CCFL backlights are similar, LEDs emit light in only one direction, so the light can be coupled to the display more efficiently. This allows an LED backlight to provide the same brightness with less power. LED back-lights also enable designers to vary the brightness of the backlight (or even the color of the backlight, when using RGB LEDs) in individual regions of the display to achieve significant additional power efficiency.Lower voltages and reduced electro-magnetic interference (EMI).A typical LED backlight might require a DC-DC power supply to provide 30-40 V DC, while a comparable CCFL backlight needs a power inverter to provide 300-400 V AC. Supplying this lower DC voltage over un-shielded cables within a design will likely generate less near-field EMI. Driving LED BacklightsLED backlights can be electrically modeled as fixed voltage drops equal to the forward voltage of the LEDs (typically 2.5 – 3.5 V per LED, depending upon device and color), with the LED brightness controlled by the current flowing through the devices.The simplest approach is to drive the backlight with a DC voltage through a current-limiting resistor, as seen in Figure 17. Because there can be significant variations in forward voltages between the LEDs, the circuit can be improved by replacing the simple resistor with a constant-current source for each series connection of LEDs, as seen in Figure 18.Figure 18. Backlight LED driver with constant-current sources.RS Figure 17.Backlight LED driver with current-limiting resistor.Testing Energy Efficient DesignsIf the application requires an extremely bright display, the lowest possible consumption, or the ability to control the brightness over a very wide range, another method is needed.By exploiting two characteristics of the human visual system, an AC current can be substituted for the DC current. As long as the switching frequency is above about 100 Hz (above the “flicker fusion” rate), the backlight will not be perceived as flickering. Also, the human eye provides some image persistence, tending to “remember” the peaks of brightness for a short period of time, rather than responding to the average brightness over time. This allows the perceived brightness to be controlled by adjusting the duty cycle of the peak current.A Pulse Width Modulated (PWM) or duty-cycle current control scheme, as seen in Figure 19, provides several advantages over the simple constant-current method. A higher perceived brightness can be achieved at a reduced average power level by operating the LEDs at relatively high peak currents. Because the brightness is controlled by adjusting the dutycycle of the LED current, the average current and therefore the brightness can be controlled without changing the power supply voltage. This allows the designer to optimize the efficiency of the DC-DC converter for the circuit. Finally, because the peak current remains unchanged, the LEDs are operated at the same current levels (e.g. 15-20 mA for white LEDs) and exhibit consistent color.Measuring Backlight PowerBecause of the dramatic differences in backlight driver voltage and current for CCFL circuits and LED circuits, different measurement equipment is needed.Figure 20 shows the measurement results using anoscilloscope for a CCFL backlight circuit. The AC voltage (yellow waveform) is about 900 Vpk-pk, requiring a high- voltage differential probe. In this example, a Tektronix P5200 Series high-voltage differential probe is used. The current levels (cyan waveform) are in the milliAmp range, meaning a sensitive current probe is needed. Here, a Tektronix TCP Series current probe is used. The instantaneous powerdissipation in the CCFL tube is shown with the red waveform, representing an average power of about 1.1 W.Figure 19. Backlight LED driver with modulated current sources.Figure 20. MSO4000 Series oscilloscope display of power measurements on CCFL Backlight.。
水下探测用高重频双波段激光器
水下探测用高重频双波段激光器沈兆国;王建洲;董涛;张晓杰;郝培育;张凤霞;赵振宇【摘要】Laser with higher frequency,smaller dimension and wider band is required in underwater detection.We proposed the 1 064 nm miniaturization laser with high repetition frequency could be obtained by side-pumped laser technology and EO Q-switched technology,and 532 nm laser output could be achieved by extra-cavity-doubled frequency conversion.1 064 nm laser with output energy of 36 mJ and 532 nm laser with output energy of 20 mJ were obtained under conditions of 100 A power input current and 1 kHz Q-drive frequency.Results indicate that dual-band miniaturization laser with output of high pulse repetition frequency and narrow pulse width can be realized by diode-pumped laser technology and frequency conversion technology.%就水下探测设备要求激光器输出频率高、体积小、波段宽,提出通过侧面泵浦激光技术和电光调Q技术获得高重频1 064 nm波段激光.利用腔外波长变换技术,实现532 nm激光输出.在电源输入电流100 A,调Q驱动频率1 kHz的条件下,获得36 mJ的1 064 nm激光输出和20 mJ的532 nm激光输出.试验结果表明:通过半导体泵浦技术和频率变换技术,可实现高重频窄脉宽双波段激光输出.【期刊名称】《应用光学》【年(卷),期】2017(038)004【总页数】4页(P670-673)【关键词】半导体泵浦;双波长;激光器【作者】沈兆国;王建洲;董涛;张晓杰;郝培育;张凤霞;赵振宇【作者单位】中航工业洛阳电光设备研究所,河南洛阳 471009;西安重装渭南光电科技预先公司,陕西渭南 714000;中航工业洛阳电光设备研究所,河南洛阳 471009;中航工业洛阳电光设备研究所,河南洛阳 471009;中航工业洛阳电光设备研究所,河南洛阳 471009;中航工业洛阳电光设备研究所,河南洛阳 471009;中航工业洛阳电光设备研究所,河南洛阳 471009【正文语种】中文【中图分类】TN249海底地形是海洋基础测绘要获取的重要地理空间信息之一，在海洋权益维护、国防建设中具有重要作用。
Altium Designer中英文技术词汇对照
[检索词汇] altium designer 中英文技术词汇对照PCB AD常用术语翻译对译protel 单词Accept 接受Accuracy 精确度准确度Activate 激活活动启动Add 添加Address 地址Advance 高级Aide 助手辅助Align 排列对齐Alpha 开端Analog 模拟的Analyzer 分析器测定仪Angle 角度观点Annotate 注解Aperture 孔径光圈Applocation 应用程序Approximation 接近近似值Arc 圆弧弧度Architecture 结构体构造Array 阵列数组Ascend 登高上升Assembly 集合装配Associate 关联的辅助的Asynchronous 异步的Automatical 自动的Access 存取通道接近Action 行动作用Active 积极的活泼的Adder 加法器Administration 管理员管理器Aggressor 干扰源入侵者Alias 别名化名混淆Allow 允许Always 总是永远Analysis 分析研究Animation 动画Any 任意的Applicable 可应用的适用的Apply 应用Arbiter 仲裁器Architect 设计者制造者Area 面积范围Arrange 安排排列调整Arrow 箭形Assembler 装配器汇编Assign 分配分派指定Astable 非稳态的多谐振荡的Attempt 尝试Available 有效的有用的Backup 备用Bar 标签Base 基极基础基地Batch 批处理批量Begin 开始创建Behavior 行为举止态度Bell 铃钟Between 两者之间Bidir 允许双向Bidirectional 双向性Bill 清单Binary 二进制二元的Bistable 双稳Bit 位Bitmap 位图Black 黑色黑色的Blind 盲孔Blip 标志信号Block 框栏隔阻Board 板子牌子委员会Body 物体主干主体Boolean 布尔值Border 边线Bottom 底部Bounce 反弹抖动Breakpoint 中断点断点Broken 破裂的损坏的Browse 浏览Buffer 缓冲器Build 构建Bullet 锥形体Bury 埋藏Bus 总线Butterfly 蝶形Button 按钮Bypass 省略Byte 字节Cable 电缆Calculation 计算估计CAM(computer aided manufacturing)计算机辅助制造Cancel 作废删除Capacitor 电容Caption 标题Capture 捕获收集记录Case 实情案例Category 类目范畴部属Cathode 阴极Center 中心Centimeter 厘米Chain 链Change 改变Channel 通道Charge 充电指责指示Check 检测Chart 制成图表Child 子女Chip 集成芯片Circuit 电路Circular 圆环弧形Class 阶层等级Cleanup 清扫工作Clear 清除清零Clearance 清除余地间隙Click 单击点击Clipboard 剪切板Clock 时钟Close 关闭结束Closure 关闭闭幕Code 编码代码Collector 集电极Color 彩色着色Colour 颜色Column 圆柱纵列栏目Combination 组合Comma 逗号Command 命令Comparator 比较器Community 社区群落Compilation 编辑物Compatible 兼容的和谐的Component 元器件组成成分Compile 编辑收集汇编Computer 计算机Composite 合成的复合的综合的Condition 条件Concurrent 并发事件同行Configure 配置Confidence 置信度自信信赖Conflict 冲突Confirm 确认证实Connector 连接端Connectivity 连线Constraint 约束限制因素Console 主控台表盘托架Consumer 用户使用者Construction 构造Continue 继续延伸Contract 缩短Control 控制Convert 转化转变Coordinate 坐标Copper 铜Copy 拷贝复制Core 核Cord 绳线索Corner 角落拐角Corporation 公司企业法人Counter 计数器Courtyard 天井庭院Create 创建Cross 十字符号混合Crosspoint 插入测试点Crosstalk 串扰CRTCrystal 晶体Current 电流当前的流行的Cursor 光标游标指示器Custom 惯例Customer 用户客户Cutout 切出划出挖空Cycle 周期Comment 注释发表评论说明书Dashed 下划线Data 数字数据Databse 数据库资料库Date 日期Daughtrer 子系子插件派生Debug 排错调试Dead 死的Decimal 十进制小数Decade 十进制十年Default 默认值缺省值弃权Decoder 译码器Definition 定义式限定分辨率Define 定义下定义Delay 延时Degree 度等级Demo 演绎演示版Delete 删除Demote 降级降低Deny 否认Description 描述Designator 标识指示者Designer 设计师Destination 目标目的Detail 细节零件Device 装置设备图样器件Diagram 示意图Dialog 对话Diagonal 对角线Difference 差异查分差额Diamond 菱形钻石Digital 数字的Different 不同的Dimension 尺度Dim 朦胧暗淡Direct 指示指令Diode 二极管Disable 无能无效无用Director 指南指导咨询Disk 圆盘Discharge 放点排出释放Distribution 分配分布分发Display 显示Dock 停放连接接驳Divider 分配分割Dot 小点虚线点缀Donut 环形Download 下载Down 下降Draw 绘制描写冲压成型Drag 拖拽Drop 下拉滴落遗漏Drill 钻Duplicate 复制副本Dual 双数的两倍Duty 占空比Edge 边缘Edit 编辑Efficient 高效的有能力的Electrical 电气的电学的电力的Ellipse 椭圆Embed 潜入插入Emitter 射极Emulate 效法Enable 使能激活有效Encoder 编码器End 结束Engineer 设计建造工程师Enter 进入参加Entity 实体Entry 入口Enum 列举型别Error 错误Evaluation 评价评估鉴定Example 例子Excel 胜过优秀突出Execute 执行实施签署Exist 存在的现有的Expand 扩大推广展开Expansion 扩大扩展扩张Expiry 终止期满Explode 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机器机械Multivibrator 多谐振荡器Maker 制造者Magnitude 幅值强度量值Manage 管理操纵Male 阳的Manual 手册手动的Manager 管理者经理主任Map 图Manufacture 制造制作加工Match 匹配比赛Mask 表面掩膜屏蔽Matrix 矩阵混合物Material 材料物质Maximum 最大值最大量Maximize 增加扩大Measure 测量Meal 粉状物膳食Medium 中间的媒介Mechanical 机械的Membership 会员资格Mega 许多非常强大Memory 存储器内存Menu 菜单Merge 合并Message 信息Meter 米（长度单位）Metric 公制的Microsoft 微软Millimeter 毫米Minimum 最小值Miscellaneous 混合杂项多样Miser 钻探机Miss 损失差错遗漏Miter 斜接斜角Mix 混合结合杂交Mode 形状方式风格Model 模型模特型号Modify 更改修饰Module 模块组件单元Moire 网纹纹波龟纹Mold 模块模型Monitor 监控Monostable 单稳状态Moor 固定系住Mount 安装Move 移动Mult 多种多元多路Magnify 放大Name 名称Nano 十亿分之一纳Navigator 领航导航Neck 领口瓶颈Negative 负的Net 网络Netlable 网络标号Netlist 网络表New 新的Next 下一步再Nexus 关系Node 结点波峰Noise 噪音None 忽略一个也没Normal 正常的常规的Number 数字号码数量Object 物体目标Octagon 八边形Octal 八进制Octave 八行八度八位ODBC(ovject database connectivity) 开放数据库互联Ohm 欧姆（电阻单位）OLE DB(object lin king and embedding databse) 目标链接及嵌入式数据库Online 在线Opcode 运算码Openbus 开放总线公共总线Open 开放的公开的Operate 工作运转营业Operand 操作数运算域Optimizer 优化程序优化器Operator 运算符Orange 橙子桔子Option 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LED照明技术概述_中英文
Overview of LED lighting technologyLED SummaryLED (Light Emitting Diode), light-emitting diode, is a solid state semiconductor devices, which can be directly converted into electricity to light. LED is the heart of a semiconductor chip, the chip is attached to one end of a stent, is the negative side, the other end of the power of the cathode, the entire chip package to be epoxy resin. Semiconductor chip is composed of two parts, part of the P-type semiconductor, it inside the hole-dominated, the other side is the N-type semiconductor, here is mainly electronic. But linking the two semiconductors, among them the formation of a "PN junction." When the current through the wires role in this chip, will be pushing e-P, P zone in the hole with electronic composite, and then to be issuedin the form of photon energy, and this is the principle of LED luminescence. The wavelength of light that is the color of light, is formed by the PN junction of the decisions of the material.With the appearance of the White Light-Emitting Diodes, the LED also developed to be used for lighting. It is a new type of light source in the 21st century with advantages of high efficiency, long-life span and invulnerability which can not be compared with the traditional light sources. When being pressured with positive voltage, the LED can emit single-color, discontinuous light, which belongs to a kind of Organic Electroluminescent Effect. Varying the chemic component of the semiconductor material being used, we can make the LED emit a certain light which is very closed to ultraviolet radiation, visible light and infrared ray.LED history50 years ago, people have to understand semiconductor materials can produce light of the basic knowledge, the first commercial diodes in 1960. English is the LED light emitting diode (LED) acronym, andits basic structure is an electroluminescent semiconductor materials, placed in a wire rack, then sealed with epoxy resin around, that is, solid package, Therefore, the protection of the internal batteriescan play the role of line, so the seismic performance LED good.LED is the core of the P-type semiconductor and components of the N-type semiconductor chips, the P-type semiconductor and N-type semiconductor between a transition layer, called the PN junction. In some semiconductor materials in the PN junction, the injection of a small number of carrier-carrier and the majority of the extra time will be in the form of light energy to release, thus the power to direct conversion of solar energy. PN junction on reverse voltage, a few hard-carrier injection, it is not luminous. This use of injection electroluminescent diodes is produced by the principle of light-emitting diodes, commonly known as LED. When it in a positive stateof the work (that is, at both ends with forward voltage), the current flows from the LED anode, cathode, semiconductor crystals on the issue from the ultraviolet to infrared light of different colors,light and the strength of the currents.Instruments used for the first LED light source instructions, but all kinds of light colored LED lights in traffic and large screen has been widely applied, have a very good economic and social benefits. The 12-inch red traffic lights as an example, is used in the United States have long life, low-efficiency 140 watt incandescent lamp as a light source, it produced 2,000 lumens of white light. The red filter,the loss-90 percent, only 200 lumens of red light In the light of the new design, Lumileds companies have 18 red LED light source,including the loss of circuit, a total power consumption of 14 watts to generate the same optical effect. Automotive LED lights is also the source of important areas.For general lighting, people need more white light sources. The 1998 white LED successful development. This is the GaN LED chip and Yttrium Aluminum Garnet (YAG) package together cause. GaN chip of the Blu-ray (λ p = 465nm, Wd = 30nm), made of high-temperature sintering of the Ce3 + YAG phosphors excited by this Blu-ray after irradiating a yellow, the peak 550 nm. Blue-chip installed in the LED-based Wanxing reflection in the cavity, covered with a resin mixed with YAG thin layer, about 200-500 nm. LED-based tablets issued by the Blu-ray absorption part of the phosphor, the phosphor another part of theBlu-ray and a yellow light mixed, can be a white. Now, the InGaN / YAG white LED, YAG phosphor by changing the chemical composition of the phosphor layer and adjust the thickness of the 3500-10000 K color temperature can be colored white. This blue LED through the method by white, constructed simple, low-cost, high technology is mature, so use the most.In the 1960s, the use of science and technology workers semiconductor PN junction of The principle of developing a LED light-emitting diodes. At that time, the development of LED, the materials used are GaASP, its luminous color is red. After nearly 30 years of development, and now we are very familiar with the LED, has been sent to red, orange, yellow, green, blue, and other shade. Howeverlighting necessary for white LED light only in recent years to develop, readers here to tell us about lighting with white LEDConductor light-emitting diode (LED) as a third-generation semiconductor lighting source. This fantastic product has a lot of advantages: (1) efficient light: spectra of almost all concentratedin the visible light frequency, the efficiency can reach 80% -90%.The luminous efficiency of incandescent visible light efficiency of almost 10% -20% only (2) high quality of light: not as a result of spectrum UV and infrared, there is no heat, no radiation, istypically a green light illumination. (3)energy consumption of the small: single power generally 0.05-1w, through the cluster can be tailored to meet different needs, and waste very little. As a light source, under the brightness in the same power consumption of only ordinary incandescent 1/8-10.(4) long life: flux attenuation to 70%of the standard life expectancy is 100,000 hours. A semiconductorlight can be used under normal circumstances 50 years, even if the long life of the people, life will be used up to two lights. (5) durable and reliable: No tungsten wire, glass and other easily damaged components, non-normal retirement rate is very small, verylow maintenance costs. (6) the application of flexibility: small size, can flat pack, easy to develop into a short thin products, make point, line, face various forms of specific applications. (7) Security: working voltage 1.5-5v or less in between the current 20-70mA in between. (8) green: recyclable waste, no pollution, unlikefluorescent lamps containing mercury as ingredients. (9) responsetime is short: to adapt to frequent and high-frequency switching operation of occasions.Green lighting, Energy conservation, not only responds thegovernment building "resource-saving and environment-friendlysociety" requirement, but also radically reduces the environmentalpressure of economic growth. The advent of LED products, willeffectively promote the realization of scientific concept ofdevelopment, realize the sustainable development of society, andachieve win-win economic and social benefits - which are at a newstarting point, to the historical mission and commitment of people-oriented lighting technology.Changing traditional methods of lighting, LED is the solid-statesemiconductor which transfers electricity directly into the visiblelight, LED has become the innovation of light world, LED is theessential green technology revolution to human.LED lighting products with DC drives, ultra-low power consumption,and electro-optical conversion close 100%, Compared with traditionallight, it saves more than 80% light energy based on the same lightingeffect .Under the appropriate current and voltage driver, the workinglife can reach 60,000to 100,000 hours, which is 10 times more thanthe traditional illuminant. Meanwhile, without Starter and Ballast,LED light has fast start-up, without strobe, soft light, purespectrum, high CRI, be helpful for visual protection and physicalhealth, create a harmonious and comfortable living environment.On behalf of High Point technology representative of Semiconductor optoelectronic devices, LED products will constantlybreak scientific record; achieve higher luminous efficiency, morepowerful, smaller, more pure spectrum, and intelligent control. Withthe maturing of LED technology, declining trend of manufacturing costs, In the near future, LED lighting will replace the full range of traditional lighting, bring revolutionary change for e veryone’s work and life.LED照明技术概述LED概述LED（Light Emitting Diode），发光二极管，是一种固态的半导体器件，它可以直接把电转化为光。
节能灯术语——精选推荐
节能灯CFL英语术语（Compact Fluorescent Lamp）LED是利用半导体材料制作成发光二极管直接把电能转换成光能，它的电光效率很高。
而节能灯的基本工作原理和日光灯是一样的，只是把镇流器改成电子的并且和灯管作成一体的，虽然比白炽灯要省电，但是比LED的电光转换效率要低，灯管的使用寿命也不如LED。
顺便补充一句，节能灯管的外接电压虽然是220V交流，但是实际上它的工作电压要低得多，在整流器内部要先进行整流降压变为较低的直流，然后再变换成驱动灯管的高频交流电，之所以外接220V交流电，完全是为了人们日常使用的方便，因为在我国，家庭供电都是220V 交流电。
LED与节能灯最直观的区别是，LED直接用直流电供电，电压比较低。
功耗非常低。
而节能灯的工作电压是220V.其次两者的制造材料和工作原理也有本质的区别。
LED日光灯功率因素高，损耗低，寿命长，节能环保，不过相对来说价钱高很多..LED:发光二极管(Light Emitting Diode) 半导体照明瓦特watt电压（伏特数）voltage光强度luminous intensity, I光强度单位：坎德拉candela, cd照度Illuminance, E照度单位：勒克斯Lux, lx辉度Luminance, L光通量Luminous flux, ф色温color temperatureFL: cold cathode fluorescent lamp:冷阴极荧光灯0.hcfl: hot cathode fluorescent lamp:热阴极荧光灯1.CFL：节能灯Compact Fluorescent Lamp 紧凑型荧光灯/自镇流式荧光灯2. Watt: 功率A unit of electrical power电功率单位Rated Watt (额定功率）3. Voltage: 电压A measurement of the electromotive force in electrical circuit电路中电动势的测量单位（对电流的压力）Rated Voltage (额定电压）4. Luminance: 亮度A measure of photometric brightness对光亮度的测定5. Luminous Efficacy: 光效The light output of a light source divided by the total power input to that source 光输出总量/输入总功率(光效）Incandescent（白炽灯）年,5~22LPW,750~2K HourHalogen（卤素灯）1959年,12~36LPW, 2~5K HourCFL（节能灯）1993年,27~80LPW, 9~10K HourMetal Halide（金卤灯）1964年,80~115LPW, 10~20K Hour HPS (高压钠灯）1965年,90~140LPW,10~24 Hour Fluorescent（日光灯）1939年,75~100LPW, 12~24K Hour Mercury（水银灯）50~60LPW, 12~24K Hour6. CRI: Color Rendering Index (显色指数）a lamp’s ability to render object colors.Incandescent CRI = 100Halogen CRI = 100CFL CRI < 837. Color Temperature (色温）expressed in Kelvins (K), is one way to describe this color tone. 2700K~3000K warm white (暖光）3500K neutral white (本色光）4100K cool white (冷光）6400K daylight (日光）8. Current crest factor (CF) (电流波峰比）< 1.79. U type (U 形灯）2UTriple U/3UQuad4 U5U….9U10. Spiral (螺旋）T4 spiral (Φ12)T3 spiral (Φ 9) – Slim spiral (细螺旋）11. Candle (烛形）12. Globe (球形）13. Bullet (子弹形）14. Household （普泡形）-A lamp15. PAR & R lamp （反射罩灯）16. Frosted Lamp (磨沙灯）17. Pilot lamp (指示灯）18. Neon tubing (霓虹灯）19. Cold cathode fluorescent lamp (冷阴极灯）(CCFL)20. Incandescent lamp (白炽灯）21. fluorescent lamp （日光灯）22. High pressure sodium lamp (高压钠灯）23. Metal halide (金卤灯）24. Spot lighting (聚光灯）25. Flood lighting (泛光灯）26. Bactericidal lamp (杀菌灯）-Ultraviolet lamp27. Base (灯头）E26, E27……28. Lamp holder （灯座）29. Plastic housing (塑壳）30. Lighting source (光源）32. Luminous flux (光通量）33. Luminous intensity (光强度）34. Spectrum (光谱)Continuous spectrum (连续光谱）Line spectrum (线光谱）Full spectrum (全光谱）35. Lumens depreciation (evanescence) (光衰）36. Initial lumens (初始流明）37. Lamp flicker (灯闪烁）38. Wire jumper (跳线）39. Enamel-covered wire (漆包线）40. Component (元器件）41. Toroidal ring (磁环）Toroidal base （磁环座）42. Resistor (电阻）Metal film resistorCarbon film resistor43. Capacitor (电容）Electrolytic capacitor (电解电容）Metallized polypropylene film capacitor( 金属化聚丙烯膜电容）Polypropylene film capacitor （聚丙烯电容）Metallized polyester film capacitor(金属化聚酯膜电容）Polyester film capacitor (聚酯膜电容）44. Diode (二极管）Rectifier diode (整流二极管）45. Transistor (三极管）46. MOS (晶闸管）47. IC – integrate circuit (集成电路）48. Tube (灯管）Electrode (电极）Cathode （阴极）Cathode activation (阴极激活）Cathode breakdown (阴极击穿）Cathode coating (阴极涂层）Cathode contamination （poisoning) (阴极中毒）Cathode emission (阴极发射）Cathode evaporation (阴极蒸发）Cathode glow (阴极辉光）Cathode potential (阴极电位）Cathode region (阴极区）Cathode sputtering （阴极溅射）Cathode –voltage drop (阴极压降）Anode (阳极）Anode bar （阳极杆）Anode current (阳极电流）Anode dark space (阳极暗区）Anode potential (阳极电位）Anode sputtering (阳极溅射）Anode terminal （阳极端）Distance between anode and cathode (阴阳极间距）Filament (灯丝）Tube’s lead wire (灯管引线）Filament voltage (灯丝电压）Phosphor (荧光粉）（磷）Amalgam (汞齐）Argon (氩）Neon (氖）Exhaust tube (排气管）Maximum overall diameter (MOD) (灯管最大外径）Maximum overall Length （MOL）（灯管最长长度）49. Plastic housing (灯壳）Sandy finish (晒纹处理）Gloss finish (抛光处理）50. Silk screen (丝印）51. Soldering dip (浸焊）Solder temperature (焊接温度）52. Hot melt glue （热熔胶）50. Aging test （老化测试）4. Starting mode (启动方式）Instant-Start (瞬时启动）With enough voltage across a fluorescent lamp, the arc will strike without preheating of the cathodes.Wired in parallel ;Most popular type of electronic ballast today;Maximum energy savings;Start lamps without delay or flashing;Starting voltage 600V for F32T8.Rapid-Start (快速启动，预热启动）Wired in series3.5V to the electrodes for one second prior to lamp ignition;Starting voltage 450~550V for F32T8;If one lamp fails, all other lamps in circuit will extinguish;Good for lamp life.Program Rapid-Start (PRS) (程序快速启动）Wired in Ether series or parallelPrecisely heat the lamp cathodes to 650℃ with virtually no glow current before applying arc voltage the lamp;With occupancy switches by providing up to 30,000 lamps starts;Programmed-Start (PS) (程序启动）Wired in series;Provide maximum lamp life in frequent starting conditions (up to 50,000 starts)Monitors lamp and ballast conditions to ensure optimal system lighting performance;Heat the lamp cathodes to 700 ℃ prior to lamp ignition.accent lighting 重点照明acting area (spot) lighting 舞台前台（聚光）照明activated electrode 激活电极activated phosphor 激活荧光粉additional exposure 辅助曝光additional lighting 辅助照明adiabatic 绝热的adjustable floodlight effect 可调节的泛光照明效果adjustable pressure conveyor 调压输送机adjustable spot lamp 可调聚光灯adjuster nuts 调节器adjusting 调整adjusting chromaticity 调整色度adjusting chromaticity/adjusting luminance 调整亮度adjusting cursor blink rate 调整光标闪烁速度adjustment for illumination 照明调节/照度调整advertising lighting 广告照明aged lamp 已老化的灯alarm indicator WBL 告警灯alight 发光的灯amalgam fluorescent lamp 汞齐荧光灯angle of approach light 机场着陆指示灯annealing lamp 炼韧灯anti-glare 防眩光apex 顶点approach lighting fitting 着陆照明灯具arc lamp 弧光灯arc light 弧光/弧光灯arc lighting 弧光照明area floodlighting 大面积泛光照明area light 面积光源/区域光源area lights and shadows 面积光和阴影area of illumination 受照面artificial daylight 人造昼光artificial lamp/craft lamp/craftwork lamp 工艺灯artistic lighting 艺术照明barretter/ballast镇流器base 灯座battery light kit 电池式灯具big space大空间照明bracket light, wall-mounted 壁灯brass 黄铜的brass/brassiness 黄铜/黄铜制品brassily 黄铜的brazen 黄铜制的built-in electronic ballast内置电源bulb socket tag 灯泡灯座片bulb/lamp bulb 灯泡bulb's lifetime 灯泡寿命candle lamp 蜡烛灯ceiling lamp 吸顶灯/半吸顶灯ceiling light 天花灯chandelie 枝形大吊灯chapiter lamp/water jet lamp 柱头灯Christmas lamp 圣诞灯circuit board 电路板cold cathode 冷阴极color mixer混色器color rendering 演色性color temperature 色温color temperature cross fadings 色温交叉演变color washlight 颜色渐变compound light lamp 复光灯conditioning signal调光信号control signal 控制信号control unit 控制元件courtyard lighting 庭院灯daylight lamp/fluorescent lamp 日光灯/荧光灯decoiling unit 开卷机decoration bulb 装饰灯decorative lighting 装饰灯具dichroic filter 二向色镜片dimension 尺寸dimensions 外观规格dimensionality 维度dimmer 调光器diode 二极管direct glare 直接眩光/直射direct illumination 直接照明direct light ray 直接光线directive lighting 指示性照明direct-current Generators 直流发动机discharge lamps气体效电灯discoloration of pigments & textile fibres 色素的变色dissociation 分解double coil lamp 双绕灯丝灯泡down light 大堂射灯electric board 调节电控板electric light/electric lamp 电灯electric-discharge lamp 放电灯electric(al) input interface 电控输入端electronic senor light 电子感应灯electronic feeder unit 电子馈电元件emergency lamp 应急灯end mark/end of file mark 结束标记end of tape marker 带末端标记energy saving lamp/ESL 节能灯engineering Lamp 工程灯environmental protection lamp 环保灯explosion-proof lamp/explosion-proof luminaries 防爆灯exposed conductor 外露导电体Exposing Lamp 夜灯/曝光灯extra-high voltage trigger超高压触发器filament bulb 白炽灯泡filament image 灯丝象filament saturation 灯丝饱和firework lamp 烟花灯fixture/luminaire 灯具flash bulbmagnesium light 镁光灯flash rate 闪光频率flashing amber 闪光器flood lighting vehicle 照明车floodlight 泛光体/泛光灯floor lamp/standard lamp 落地灯flower lamp 花灯fluorescent lamp 荧光灯/日光灯fluorescent lamp holders荧光灯/日光灯灯头fluorescent light fixtures 荧光灯支架fluorescent lighting fixture 日光灯支架focus lamp/spotlight 聚光灯fog light tell-tale 雾灯信号灯fog-proof light 防雾灯fragrance Lamp 香熏灯frame lamp 架子灯frame lamp/worklite（工作灯）支架灯frosted bulb 磨砂灯泡gas discharge lamp 气体放电灯gas incandescent lamp 充气白炽灯gas-filled lamp 充气灯glare 眩光goss (瓷器)用戈斯氏瓷料制的grassplot lamp/green ground lamp/ lawn lamp 草坪灯green ground lamp/grassplot lamp 草地灯green light 绿灯ground buried light 埋地灯guest room lamp 客房灯HI beam （远光）大灯high-efficient energy-saving reflective lamp chassis 高效节能反射灯盘highlight strength 反光光强high-pole lamp 高杆灯hood downlight 罩灯hose lamp 软管灯ignitor 点火ignitor current 点火器电流Illuminance/E 照度单位：lxilluminance/intensity of illumination 照度illuminant color/Glow Colors 发光颜色/光源色illumination 照明/照明度/照度illumination area 照明面积illumination coefficient 光照系数illumination distance 光照距离illumination time 光照时间incandescence/incandescent lamp白炽灯incandescent arc lamp 白炽弧光灯incandescent bulb/incandescent light bulbs 白炽灯泡inductive & electric 电感式、电子式infrared 红外线的infrared lamp 红外线灯input power 输入功率input power control 输入电源控制input resistance 输入电阻input voltage 输入电压input work 输入功intensity/luminous intensity/radiant intensity/I 光强度/发光强intensity of light光的强度invisible Light 不可见光invite public bidding，tenderee 工程招标invite public bidding，tenderee 企业招标invite public bidding，tenderee 政府招标Iodine gallium light 碘镓灯Iodine tungsten lamp 碘钨灯irradiance 光照度/颜色kilowatt 千瓦lamp 电灯/人工光源lamp black 灯黑/灯烟lamp box 灯箱lamp bracket 车灯架lamp bracket 灯具支架/光管支架lamp cap/a socket for a light bulb/a burner/lamp holder/bulb holder 管帽/灯头/灯泡头lamp characteristics 灯质lamp condenser lens 光源聚光透镜lamp cover 灯罩lamp cup 灯杯lamp disc/lamp house 灯盘/灯罩lamp driver 灯驱动器lamp embryo 灯胚lamp fittings 灯具配件lamp holder 灯头lamp holder switch 灯头开关lamp holder/lamp jack/lamp base/lamp cap/socket pin/cap 灯座/管座/灯头/灯泡头/管帽lamp housing 灯壳lamp oil 灯油lamp pole 灯杆lamp ring 灯圈lamp scale 灯标度lamp seat/lamp carrier 灯座lamp shade/lamp screen/lamp-chimney/lampshade/smokebell /lamp-house 灯罩lamp shielding angle 电灯遮光角lamp switch 灯开关/电灯开关lamp test 灯测试lamp-chimney/lampshade/smokebell's form/mode/type/style 灯罩型式lamp-chimney/lampshade/smokebell's materials/lamp-shade 灯罩材质lamp-house's power 光源功率lamp-house's type/form/style/mode 光源类型/光源形式lamps and lanterns 灯具lampshade paper 灯罩纸lamp-stand 灯台landscape lamp/landscape lighting 景观灯/观景灯landscape lighting 景观照明lawn lamp 草坪灯/草地灯LDPE 低密度聚乙烯lead 导线/铅lead wire 导线lead-in 引入线LED 发光二极管led cover LED灯罩Light and radiation 光及幅射light beacon 灯桩light beam 光束light central height 光中心高度light centre length 发光中心强度light color 光色LIGHT DEVICE OF PIT INSPECTION 底坑检修照明装置Light Emitting Diode display 发光二极管显示light fillet weld 轻填角焊接light filter 滤光器/滤光片light flux meter 光通量计light guide 光导管/光导纤维/光制导light guide cap 光导罩light intensity 光强度light loss factor/LLF/maintenance factor 光损失系数light pen 光笔light scantling vessel 轻构船light shield 遮光罩light source filter 光源滤光镜light source unit for fiberoptic 纤维光束光源light source/lamphouse/light/illuminant 光源light switch 照明开关light tender 灯塔补给船light tone光谱分布图light wave 光波light-fixture 灯饰lighthouse due 灯塔税lighthouse tube 灯塔管lighting copper fitting 灯饰铜配件lighting crystal fitting 灯饰水晶配件lighting effect 光照效果lighting equipment 灯饰设备lighting fittings/light fittings 灯饰配件lighting fixture 照明器材luminaire efficiency 灯具效率Luminance 辉度单位cd/m2luminance efficiency 发光效率单位: lm/wluminance measurement grid 照度计算网格luminance uniformity 亮度均匀度luminous intensity 光强度单位: cdmagenta 红紫色magnesium bulb/magnesian bulb 镁灯泡manifest 船单manostat/regulator 稳压器manufacturing engineer 制造工程师maple 淡棕色marble 大理石marble lamp 石艺灯marble stone lamp 云石灯mercury lamp 水银灯mercury lamp 汞灯metal halid lamp 卤化金属灯/复金属灯metal halide 金属卤素灯metal halide lamp 金属卤化物灯metal halogen lamp/metal halid lamp 金卤灯Metal-clad cables 包覆金属电缆metallic reflection 金属反射metallic reflector 金属反射器miniature Edison screw-cap/small Edison screw-cap 小型爱迪生螺旋灯头minimal arc distance 最小电弧距离minimize 成极小minimum detectable partial pressure 最小可检分压强minimum flow-rate 最小流量minimum freeboard 最小干舷minimum load operation 最小负荷操作minimum operating speed 最低工作转速minimum order quantity 起订量/最小订单量minimum quantity 最小数量minimum thermometer 最低温度计/最低温度表minimum turning diameter test 最小转弯直径试验minimum variance estimation 最小方差估计minor 次要/局部mirror front lamp 镜前灯mosquito killer lamp 灭蚊灯mother board 母板motion picture lamp 动感画灯Motor Elements and Power Supply 电机电器及电源供应MOV 贴片压敏电阻Movable light-source 可移动光源MP，PM 最大输出功率narrow gap one-side automatic welding 窄间隙单面自动电弧natatorium lamp 游泳池灯具National Synchrotron Light Source 国家同步幅射光源natural vibration 自动振动Navigation tree 导航树navy blue/oxfordNebulization 喷雾作用Nebulizer 喷雾器necking down 缩口needle 针阀neon bulb 氖灯泡Neon lamp 氖灯/霓虹灯neon lamp/neon light/neon sign 霓虹灯NEON SIGN 氖灯parallel connection 并联photomatric data 配光曲线图potentiometer 电位计，分压计power factor 功率因数power suppliers 电源potentiometer 电工作环境温度：Working temperature工作电压：Supply voltage额定电源频率Rated power frequency额定功率Rated power驱动电源效率Power supply efficiency功率因数Power-factor(PF)LED发光效率LED luminoue efficiency灯具初始光通量Luminous flux灯具出光效率Lamp Flux色温Color temperature显色指数CRI: Ra>75防护等级IP rating:IP65使用寿命Working life外壳材质Shell material character产品尺寸Size(A*B*C mm)重量Net weight (kg)包装尺寸Packing dimensions(mm)吊灯Pendant lamp半吊灯Half pendant lamp台灯Table lamp壁灯Wall lamp落地灯Floor lamp吸顶灯Ceiling lamp水晶灯Crystal lamp木灯Wooden lamp宫灯Palace lamp仿水晶灯Imitated Crystal lamp低压灯Low voltage lamp石艺灯Marble lamp羊皮灯Parchment lamp镜前灯Mirror front lamp镜画灯Picture lamp吊线灯Line lamp格栅灯Grille lamp水珠灯Water pearl lamp柱灯Pillar lamp蒂凡尼灯Tiffany lamp风水灯Water fountain lamp筒灯Down lamp/Tube light动感画灯Motion picture lamp客房灯Guest room lamp玻璃灯Glass lamp仿云石灯Imitated Marble Stone Lamp装饰灯Decoration Bulb静态画灯Static Picture lamp香薰灯Fragrance Lamp云石灯Marble Stone Lamp铁艺灯Wrought iron Lamp和式灯Woodent lamp天花灯Ceiling light氧吧灯Oxygen bar light钟灯Clock lamp路灯Street lamp庭院灯Garden lamp草坪灯Lawn lamp埋地灯/ 地埋灯underground lamp草地灯Green ground lamp/grassplot lamp 防潮灯Moisture-proof lamp柱头灯chapiter lamp水底灯/ 水池灯underwater lamp/pool lamp,par lamp 户外壁灯Outdoor wall lamp组合灯Assembled lamp太阳能灯Solar lamp景观灯/ 观景灯Landscape Lamp/Landscape Lighting 泛光灯Flood light广场灯Square Lamp高杆灯High-Pole Lamp网球灯Tennis lamp/Tennis ball lamp隧道灯Tunnel Lamp环保灯Environmental protection lamp/防水灯water proof lamp园林灯gardening light彩虹灯rainbow lamp烟花灯Firework lamp节日灯Holiday lamp圣诞灯Christmas lamp椰树灯Coconut lamp水下彩灯subaqueous festoon lamp装饰彩灯ornamental festoon lamp花灯flower lamp宫灯palace lamp变色灯Color-changing lamp树顶灯treetop lamp米灯rice lamp网灯meshwork lamp冰条灯ice bar lamp跑马灯horse race lamp软管灯hose lamp蜡烛灯candle lamp节日灯串festival lamp luster霓虹灯neon lamp 4复光灯compound light lamp水管灯water pipe lamp窗帘灯curtain lamp导轨灯track lamp 2 B舞台灯Stage lamp应急灯Emergency lamp射灯Down lamp/Spot lamp嵌灯Recessed light车灯/ 汽车灯Car lamp/Automotive Lamp投光灯Projecting Lamp走线灯Linear light灭蚊灯Mosquito killer lamp杀菌灯Bactericidal lamp支架灯/ 工作灯Frame lamp/Worklite防雾灯Fog-proof light三防灯Tri-proof light净化灯Cleaning luminaire/Purified fixture lamp 探照灯Searchlight架子灯Frame lamp超市灯Market Light商业照明灯Commercial lighting景观照明Landscape Lighting单端灯Single-ended Lamp红外线灯Infrared lamp曝光灯Exposing Lamp紫外线灯Ultraviolet lamp灯泡Bulb节能灯Energy saving lamp荧光灯Fluorescent lamp电筒/ 闪光灯Torch/Flashlight灯杯Lamp cup金卤灯Metal halogen lamp溴钨灯Bromine tungsten lamp汞灯Mercury lamp钠灯Sodium lamp卤钨灯Halogen tungsten lamp碘钨灯Iodine tungsten lamp氖灯Neon lamp石英灯Quartz lamp卤素灯Halogen lampLED 灯/ 发光二极管LED/light-emitting diode 护拦灯Rail Guarding Lamp面板灯Panel light工程灯Engineering Lamp碘镓灯Iodine gallium light聚光灯focus lamp/spotlight灯罩Lamp shade灯头Lamp base灯座Lamp holder灯盘lamp disc压克力配件Acrylic fitting塑料橡胶配件plastic fitting陶瓷配件Ceramic fitting五金配件Hardware fitting玻璃配件Glass fitting压铸件Die-casting fitting开关Switch电线电缆Electric wire 插头Pin/Plug插座Socket电感镇流器Inductive ballast电子镇流器Electric ballast适配器Adaptor整流器Commutator/Rectifier变压器Transformer启辉器Starter感应器/ 传感器Sensor调光器Dimmer端子Terminal管帽/ 灯头/ 灯泡头Lamp Cap特殊功能灯管special function tube其他未分类unassorted灯饰铜配件Lighting copper fitting灯饰水晶挂件Crystal lighting pendants 灯饰水晶配件Lighting crystal fitting电镀产品Electroplate product玻璃制品Glasswork光纤Optic Fiber工艺装饰品Artwork ornaments灯丝Filament灯杆Lamp pole专用铜配件Special copper fitting木制配件Wooden Fittings灯箱lamp box滤光器Light Filter调光台Control Console/Light control desk 换色器Color Move Equipment转换器Commutator传感器Sensor电容Capacitance电阻、电阻器resistance二极管diode三极管audion/Dynatron磁环、磁性材料Magnet ring烛台candle holder其它电子元件other electron component 台灯配件Table lamp fittings发光二极管LED继电器relay灯具支架lamp bracket灯胚lamp embryo电池battery闪光器flashing amber石英灯导轨quartz lamp track电源配件Power Supply fittings灯饰专用软管spe室内灯residential lamp/light树状大吊灯chandeliers吊灯pendant lamp/light半吊灯half pendant lamp/light台灯table lamp/light壁灯wall lamp/light落地灯floor lamp/light吸顶灯ceiling lamp/light水晶灯crystal lamp/light木灯wooden lamp/light仿水晶灯imitated crystal lamp/light低压灯low voltage lamp/light工艺灯artificial lamp/light石艺灯marble lamp/light羊皮灯parchment lamp/light镜前灯mirror front lamp/light镜画灯picture lamp/light吊线灯track/line lamp/light格栅灯grille lamp/light水珠灯water pearl lamp/light导轨灯track lamp/light柱灯pillar lamp/light蒂凡尼灯tiffany lamp/light风水灯water fountain lamp/light户外灯outdoor lamp/light路灯street lamp/light筒灯down lamp/light投光射灯spot lamp/light庭院灯garden lamp/light草坪灯lawn lamp/light草地灯lawn lamp/light防水灯water proof lamp/under water lamp 柱头灯water jet lamp/light水底灯underwater lamp/light户外壁灯outdoor wall lamp/light组合灯assembled lamp/light太阳能灯solar lamp/lamp彩灯holiday lamp/light彩虹灯rainbow lamp/light烟花灯firework lamp/light节日灯holiday lamp/light圣诞灯Christmas lamp/light椰树灯coconut lamp/light卤素灯Halide lamps/Halogen lamps白炽灯泡incandescent light bulbs组合开关integral switch专业照明illumination舞台灯stage lamp应急灯emergecy lamp/light嵌灯/嵌入灯/埋地灯recessed light/lamp车灯car lamp车头灯head lamp投光灯spot light/lamp走线灯light linear泛光灯flood light/lamp景观灯landscape light/lamp电子感应灯electronic senor light/lamp灭蚊灯mosquito killer lamp光源light灯泡bulb节能灯energy saving lamp节能灯（紧凑型荧光灯）Compact Fluorescent Lamp 荧光灯fluorescent light/lamp荧光灯支架fluorescent light fixtures电筒flashlight/torch light/lamp灯杯lamp cup金卤灯metal halide/halogen lamp溴钨灯Bromine tungsten lamp汞灯mercury钠灯Sodium lamp卤钨灯Halogen tungsten lamp碘钨灯iodine tunsten lamp氖灯/霓虹灯neon lamp石英灯quartz lamp倍尔诺照明Banner lighting company卤素灯halogen lamp灯饰配件light fittings灯罩lamp shade灯头/灯座lamp holder灯头/灯座lamp base灯盘lamp house压克力配件acrylic fitting塑胶配件plastic fitting陶瓷配件ceramic fitting五金配件hardware fitting玻璃配件glass fitting荧光灯fluoescent light/lamp节能灯Compact Fluorescent lamp(2u 3u 4u)荧光灯支架Fluorescent Light and Fixtures节能灯Energy saving lamp电子镇流器Electronic Ballasts压铸件dis-casting fitting开关switch电线electric wire/power cored插针/插头pin(plug)插座socket电感镇流器Inductive/magnetic ballast适配器adapter变压器transformer启辉器starter整流器commutator感应器sensor调光器dimmer端子台termianl荧光灯管Linear fluorescent light tube三基色tri-phosphor三基色稀土荧光粉tri-phosphor Fluorescent Powder 三基色灯管tri-phosphor tube light三基色发光二极管tri-phosphor LEDS伪彩色ＬＥＤ显示屏pseudo-color LED panel全彩色ＬＥＤ显示屏all-color LED panel光及辐射Light and radiation光通量Luminous flux,光强度Luminous intensity,I单位：坎德拉Candela,cd照度Illuminance,E单位：勒克司Lux,lx辉度Luminance,L色温Color Temperature光色Light color演色性Color rendering平均演色性指数general color rendering index,(ra) 灯具效率Luminaire effiency不可见光Invisible Light光谱Spectrum白炽灯泡Incandescent bulb气体放电灯Gas discharge lamp发光二极管LED烟花灯firework lamp / light节日灯holiday lamp / light圣诞灯Christmas lamp / light椰树灯coconut lamp / light卤素灯Halide Lamps / Halogen Lamps白炽灯泡incandescent light bulbs组合开关integral switch专业照明illumination舞台灯stage lamp应急灯emergency lamp / light嵌灯/嵌入灯/埋地灯recessed light / lamp车灯car lamp车头灯head lamp孙光辉Jacky Sun投光灯spot light / lamp走线灯light linear泛光灯flood light / lamp景观灯landscape light / lamp电子感应灯electronic senor light / lamp灭蚊灯mosquito killer lamp光源light灯泡bulb节能灯energy saving lamp孙光辉Jacky Sun节能灯(紧凑型荧光灯) Compact Fluorescent Lamp 荧光灯fluorescent light /lamp荧光灯支架fluorescent light fixtures电筒flashlight/torch light / lamp灯杯lamp cup金卤灯metal halide/halogen lamp溴钨灯Bromine tungsten lamp汞灯mercury lamp钠灯Sodium lamp卤钨灯Halogen tungsten lamp碘钨灯iodine tungsten lamp氖灯/霓虹灯neon lamp孙光辉翻译Translated by Jacky Sun石英灯quartz lamp倍尔诺照明Banner lighting company卤素灯halogen lamp灯饰配件light fittings灯罩lamp shade 灯头/灯座lamp holder 灯头/灯座lamp base 灯盘lamp house 压克力配件acrylic fitting 塑胶配件plastic fitting。
【science】11.5《High-Power Fiber Laser》高能光纤激光器
高能光纤激光器20 May 2011:Vol. 332no. 6032pp. 921-922DOI: 10.1126/science.1194863PerspectivePhysics转载请注明：由“西瓜嚼不烂”翻译~注１：黑色括号【】内为原文，表示没找到对于该专业词汇的准确翻译，括号前的名词多为根据原文编撰的词汇。
注２：原文见后。
【正文：】激光有着良好的相干性（空间相干），并且能够提供很高的脉冲峰值功率，故而在目前，激光的应用范围十分的广泛。
许多情况下，尤其是制造业，在切割、焊接、钻孔等方面，高度稳定的能量是必不可少的。
低功率光纤放大器是光纤网络的重要组成部分，同时它也可以发展成为工业用激光器的领跑者。
目前它的输出功率已经达到1kw，最近更是达到了惊人的10kw以上。
而这些成果都受到衍射受限光束的光束质量的限制，因为这一属性决定了光束是否能够有效地汇聚于一点。
连同强度和波长,它们一起决定了空间光的亮度和辐射率。
激光的高亮度并不取决于激光本身的能量大小，而取决于光纤激光器能够照射到目标上的能量密度。
大功率光纤激光器的成功背后有几个小秘密。
一个是包层泵浦【cladding-pumping】(4 - 6)，与传统的光学纤维(见图)相比，它使用更为复杂的光纤结构。
除了用通常的纳米数量级纤芯的光纤【few-micrometer-sized】来导光，这种双层包层的光纤还包括一个二级的同轴波导包围着纤芯。
大多数光纤激光器的光泵浦都采用半导体激光二极管，这种体积较大的二级同轴波导则在空间上容许更多的激光半导体二极管来作为泵浦，用以提供几千瓦的低成本、低亮度的光功率。
其后我们向纤芯中掺杂了镱【Ytterbium】，作为激光激活（放大）的掺杂剂。
镱是一种十分有效的激光放大离子，一方面是由于放大光的波长(1040nm——1100nm)与泵浦光的波长(910nm——980nm)十分接近(7、8)。
而两者不同之处则被称为“量子数亏损”，量子数亏损决定了激光器所产生的散热，为了降低发热，可以证明，波长为1020nm的泵浦光适用于10kW的激光器(3)。
照明专业术语
照明专业术语accent lighting 重点照明acting area (spot) lighting 舞台前台（聚光）activated electrode 激活电极activated phosphor 激活荧光additiona l exposure 辅助曝光additiona lighting 辅助照明adiabatic 绝热的adjustabl efloodlighteffect 可调节的泛光照明adjustabl pressure conveyor 调压输送机adjustable spot lamp 可调聚光灯adjuster nuts 调节器adjusting 调整adjusting chromaticity 调整色度adjusting chromaticity/adjusting luminance 调整亮度adjusting cursor blink rate 调整光标闪烁速度adjustment for illumination 照明调节/ 照度调整advertising lighting 广告照明aged lamp 已老化的灯alarm indicator WBL 告警灯alight 发光的灯amalgam fluorescent lamp 汞齐荧光灯angle of approach light 机场着陆指示灯annealing lamp 炼韧灯anti-glare 防眩光apex 顶点approach lighting fitting 着陆照明灯具arc lamp 弧光灯arc light 弧光/ 弧光灯arc lighting 弧光照明area floodlighting 大面积泛光照明area light 面积光源/ 区域光源area lights and shadows 面积光和阴影area of illumination 受照面artificial daylight 人造昼光artificial lamp/craft lamp/craftwork lamp 工艺灯artistic lighting 艺术照明barretter/ballast 镇流器base 灯座battery light kit 电池式灯具big space 大空间照明bracket light, wall-mounted 壁灯brass 黄铜的brass/brassiness 黄铜/ 黄铜制品brassily 黄铜的brazen 黄铜制的built-in electronic ballast 内置电源bulb socket tag 灯泡灯座片bulb/lamp bulb 灯泡bulb's lifetime 灯泡寿命candle lamp 蜡烛灯ceiling lamp 吸顶灯 / 半吸顶灯 ceiling light 天花灯chandelie 枝形大吊灯chapiter lamp/water jet lamp 柱头灯 Christmas lamp 圣诞灯 circuit board 电路板 cold cathode 冷阴极 colormixer 混色器 color rendering 演色性 color temperature色温 color temperature cross fadings 色温交叉演变color washlight 颜色渐变 compound light lamp 复光灯conditioning signal 调光信号 control signal 控制信号control unit 控制元件 courtyard lighting 庭院灯daylight lamp/fluorescent lamp 日光灯 / 荧光灯decoiling unit 开卷机 decoration bulb 装饰灯decorative lighting 装饰灯具 dichroic filter 二向色镜片 dimension 尺寸dimensions 外观规格 dimensionality 维度 dimmer 调光器diode 二极管 direct glare 直接眩光 / 直射 directillumination 直接照明 direct light ray 直接光线directive lighting 指示性照明 direct-currentGenerators 直流发动机 discharge lamps 气体效电灯discoloration of pigments & textile fibres dissociation 分解double coil lamp 双绕灯丝灯泡 down light 大堂射灯electric board 调节电控板electric electric-dischargeelectric(al) electronic electronic emergency light/electric lamp 电灯 lamp 放电灯 interface light unit end mark/end end of tape energy saving environmental input senor feeder lamp 应急灯 of file 电控输入端 电子感应灯 电子馈电元件 mark 结束标记 marker 带末端标记 lamp/ESL 节能灯 engineering protection lamp 环保灯 explosion-proof lamp/explosion-proof exposed conductor 外露导电体luminarie sLamp 工程灯 防爆灯 色素的变色Exposing Lamp 夜灯/ 曝光灯extra-high voltage trigger 超高压触发器filament bulb 白炽灯泡filament image 灯丝象filament saturation 灯丝饱和firework lamp 烟花灯fixture/luminaire 灯具flash bulbmagnesium light 镁光灯flash rate 闪光频率flashing amber 闪光器flood lighting vehicle 照明车floodlight 泛光体/ 泛光灯floor lamp/standard lamp 落地灯flower lamp 花灯fluorescen lamp 荧光灯/ 日光灯fluorescen t lamp holders 荧光灯/ 日光灯fluorescen t light fixtures 荧光灯支架fluorescen tlightingfixture 日光灯支架focuslamp/spotlight 聚光灯fog light tell-tale 雾灯信号灯fog-proof light 防雾灯fragrance Lamp 香熏灯frame lamp 架子灯frame lamp/worklite （工作灯）支架灯frosted bulb 磨砂灯泡gas discharge lamp 气体放电灯gas incandescent lamp 充气白炽灯gas-filled lamp 充气灯glare 眩光goss （瓷器）用戈斯氏瓷料制的grassplot lamp/green ground lamp/ lawn lamp 草坪灯green ground lamp/grassplot lamp 草地灯green light 绿灯ground buried light 埋地灯guest room lamp 客房灯HI beam （远光）大灯high-efficient energy-saving reflective lamp chassis highlight strength 反光光强high-pole lamp 高杆灯hood downlight 罩灯hose lamp 软管灯ignitor 点火ignitor current 点火器电流Illuminance/E 照度单位：lx illuminance/intensity of illumination 照度illuminant color/Glow Colors 发光颜色/ 光源色illumination 照明/ 照明度/ 照度illumination area 照明面积illumination coefficient 光照系数illumination distance 光照距离高效节能反射灯盘illumination time 光照时间lamp 电灯/ 人工光源lamp black 灯黑/ 灯烟lamp box 灯箱lamp bracket 车灯架lamp bracket 灯具支架 / 光管支架lamp cap/a socket for a light bulb/a burner/lamp holder/bulb 灯泡头 characteristics 灯质 condenser lens 光源聚光透镜 cover 灯罩lamp cup 灯杯 disc/lamp house 灯盘/ 灯罩 driver 灯驱动器 embryo 灯胚 fittings 灯具配件 holder 灯头 holder switch 灯头开关 holder/lamp jack/lamp base/lamp cap/socket pin/cap 灯座/管座/ 灯头/ 灯泡头/ 管housing 灯壳 oil 灯油 pole 灯杆 ring 灯圈 scale 灯标度 seat/lamp carrier 灯座 shade/lamp screen/lamp-chimney/lampshade/smokebell /lamp-house 灯罩 shielding angle 电灯遮光角 switch 灯开关 / 电灯开关 test 灯测试lamp-house's power 光源功率lamp-house's type/form/style/mode 光源类型 / 光源形式 lamps and lanterns 灯具 lampshade paper 灯罩纸 lamp-stand 灯台landscape lamp/landscape lighting 景观灯 / 观景灯landscape lighting 景观照明 lawn lamp 草坪灯 / 草地灯LDPE 低密度聚乙烯lead 导线/ 铅lead wire 导线lead-in 引入线LED 发光二极管led cover LED 灯罩Light and radiation 光及幅射 infrar ed lamp 红外线灯input power 输入功率input power control 输入电源控制input resistan 输入电阻input voltage 输入电压input work 输入功intensity/lumin intensity/radi intensit intens ity of light 光的强度 invisible Light invite public bidding ，tenderee 工程招标invite public bidding ，tenderee 企业招标invite public bidding ，tenderee 政府招标Iodine gallium light 碘镓灯Iodine tungste lamp 碘钨灯光强度 /发光强 不可见光incandescence/incandesce nt incandescent incandescent inductive & lamp 白炽灯 arc lamp 白炽弧光灯bulb/incandescent light electric 电感式、电子式 irradiance 光照度 / 颜色kilowatt 千瓦bulbs 白炽灯泡infrared 红外线的holder 管帽/ 灯头/ lamp lamp lamp lamp lamp lamp lamp lamp lamp lamp 帽 lamp lamp lamp lamp lamp lamp lamp lamp lamp lamplamp-chimney/lampshade/smokebell's lamp-form/mode/type/style 灯罩型式materials/lamp-shade 灯罩材质light beacon 灯桩light beam 光束light central height 光中心高度light centre length 发光中心强度light color 光色LIGHT DEVICE OF PIT INSPECTION 底坑检修照明装置Light Emitting Diode display 发光二极管显示light fillet weld 轻填角焊接light filter 滤光器/ 滤光片light flux meter 光通量计light guide 光导管/ 光导纤维/ 光制导light guide cap 光导罩light intensity 光强度light loss factor/LLF/maintenance factor 光损失系数light pen 光笔light scantling vessel 轻构船light shield 遮光罩light source filter 光源滤光镜light source unit for fiberoptic 纤维光束光源lightsource/lamphouse/light/illuminant 光源light switch 照明开关light tender 灯塔补给船light tone 光谱分布图light wave 光波light-fixture 灯饰lighthous due 灯塔税lighthous tube 灯塔管lighting copper fitting 灯饰铜配件lighting crystal fitting 灯饰水晶配件lighting effect 光照效果lighting equipment 灯饰设备lighting fittings/light fittings 灯饰配件lighting fixture 照明器材luminaire efficiency 灯具效率Luminance 辉度单位cd/m2luminance efficiency 发光效率 单位 : lm/wluminance measurement grid 照度计算网格 luminance uniformity 亮度均匀度 luminous intensity 光强度 单位 : cdmagenta 红紫色magnesium bulb/magnesian bulb 镁灯泡 manifest 船单manostat/regulator 稳压器minimal arc distance 最小电弧距离minimize 成极小minimum load operation 最小负荷操作minimum operating speed 最低工作转速minimum order quantity 起订量 / 最小订单量 minimum quantity 最小数量 minimum thermometer 最低温度计 / 最低温度表 minimum turning diameter test 最小转弯直径试验 minimum variance estimation 最小方差估计 minor 次要/ 局部 mirror front lamp 镜前灯mosquito killer lamp 灭蚊灯 mother motion board 母板picture lamp 动感画灯Motor Elements and Power Supply 电机电器及电源供应 MOV 贴片压敏电阻 Movable light-source 可移动光源 MP ，PM 最大输出功率narrow gap one-side automatic welding 窄间隙单面自动电弧natatorium lamp 游泳池灯具National Synchrotron Light Source 国家同步幅射光源 natural vibration 自动振动Navigation tree 导航树navy blue/oxfordNebulization 喷雾作用Nebulizer 喷雾器 necking down 缩口 marble lamp 石艺灯marble stone lamp 云石灯mercur y lamp 水银灯mercur y lamp 汞灯metal halid lamp 卤化金属灯 / 复金metal halide 金属卤素灯metal halide lamp 金属卤化物灯 metal haloge lamp/metal halid lampmanufacturing maple 淡棕色 engineer 制造工程师 marble 大理石金卤灯Metal-clad cables metallic reflection metallic reflector 包覆金属电缆 金属反射 金属反射器miniature Edison screw-cap/small Edison screw-cap 小型爱迪生螺旋灯头 minimum detectable minimum flow-rate minimum freeboard partial pressure 最小流量最小干舷最小可检分压强needle 针阀neon bulb 氖灯泡Neon lamp 氖灯/ 霓虹灯neon lamp/neon light/neon sign NEON SIGN 氖灯parallel connection 并联photomatric data 配光曲线图potentiometer 电位计，分压计power factor 功率因霓虹灯数power suppliers 电源potentiometer 电位仪set switch 置位开关shop drawing 施工图spot lamp 射灯stroboscope 频闪仪stroboscopic 频闪的terminal box 接线盒triggers 触发器tungsten 点钨灯wading pool 浅水池wall-mounted & accent 壁灯和射灯。
照明行业英语词汇
第一部分应急灯emergency light工具灯utility light浴室灯bathroom light灯饰附件lighting accessories灯饰配件light fittings灯泡bulb白炽灯泡incandescent light bulbs开关switch光源light source节能灯energy saving lamp荧光灯fluorescent light/lamp荧光灯管linear fluorescent light tube 环形荧光灯fluorescent circular lamp 发光二级管LED三极管audion/dynatron灯杯lamp cup灯罩lamp shade/cover灯头/灯座lamp holder灯头/灯座lamp base灯头型号base’s type灯盘lamp house灯盘lamp plate/metal pan灯柱lamp pole压克力配件acrylic fitting塑胶配件plastic fitting五金配件hardware fitting玻璃配件glass fitting压铸件die-casting fitting电线electric wire/power cored插头Pin/plug插座socket螺丝screw螺母nut十字螺丝philip's head screw扁头螺丝flat head screw方螺帽square nut螺栓杆bolt bar螺栓盖bolt cover金属面板metal surface面板bezel panel底板back plane镇流器ballast电子镇流器electronic ballast 感应镇流器inductive ballast 适配器adapter变压器transformer调节器adjustment连接器connector调光器dimmer接线端子terminal接线盒connection box电池battery光电池photocell备用电池emergency battery 保险丝fuse调光器dimmer传感器sensor电线electric wire电镀plating抛光finish/polish铬chrome镍nickel铁iron钢steel铝aluminum银silver黄铜brass不锈钢stainless steel古铜色antique brass抛光铜色polish brass图纸drawing电路图circuit diagram玻璃备品glass spare part防水waterproof防尘dustproof落下测试drop test电器测试electric test老化测试aging test壁盘back plate/disk配件component绝缘insulation斑点spots刮痕scratch验货inspection对接butt joint对接焊接butt weld光色light color瓦特watt电压(伏特数）voltage光强度luminous intensity，I光强度单位：坎德拉candela,cd照度Illuminance,E照度单位：勒克斯Lux,lx辉度Luminance，L光通量Luminous flux,ф色温color temperature三基色tri—phosphor三基色稀土荧光粉tri-phosphor Fluorescent Powder三基色灯管tri—phosphor tube light三基色发光二极管tri-phosphor LED breaker安全器conduit wiring暗线incandescent lamp白炽灯light bulb灯泡frosting bulb磨砂灯泡outlet壁上插孔transformer变压器converter变流器lamp shade灯罩bed lamp床头reading lamp阅读灯socket电灯头ceiling lamp吊灯adapter分接插头tubular lamp bulb管形灯泡fog light雾灯circuit回流switch开关fluorescent lamp日光灯decoration lamp装饰灯chandelier枝形吊灯，水晶灯spot light射灯第二部分汇总1。
照明灯具专业英语
照明灯具专业英语accent lighting 重点照明acting area (spot) lighting 舞台前台（聚光）照明activated electrode 激活电极activated phosphor 激活荧光粉additional exposure 辅助曝光additional lighting 辅助照明adiabatic 绝热的adjustable floodlight effect 可调节的泛光照明效果adjustable pressure conveyor 调压输送机adjustable spot lamp 可调聚光灯adjuster nuts 调节器adjusting 调整adjusting chromaticity 调整色度adjusting chromaticity/adjusting luminance 调整亮度adjusting cursor blink rate 调整光标闪烁速度adjustment for illumination 照明调节/照度调整advertising lighting 广告照明aged lamp 已老化的灯alarm indicator WBL 告警灯alight 发光的灯amalgam fluorescent lamp 汞齐荧光灯angle of approach light 机场着陆指示灯annealing lamp 炼韧灯anti-glare 防眩光apex 顶点approach lighting fitting 着陆照明灯具arc lamp 弧光灯arc light 弧光/弧光灯arc lighting 弧光照明area floodlighting 大面积泛光照明area light 面积光源/区域光源area lights and shadows 面积光和阴影area of illumination 受照面artificial daylight 人造昼光artificial lamp/craft lamp/craftwork lamp 工艺灯artistic lighting 艺术照明barretter/ballast镇流器base 灯座battery light kit 电池式灯具big space大空间照明bracket light, wall-mounted 壁灯brass 黄铜的brass/brassiness 黄铜/黄铜制品brassily 黄铜的brazen 黄铜制的built-in electronic ballast内置电源bulb socket tag 灯泡灯座片bulb/lamp bulb 灯泡bulb's lifetime 灯泡寿命candle lamp 蜡烛灯ceiling lamp 吸顶灯/半吸顶灯ceiling light 天花灯chandelie 枝形大吊灯chapiter lamp/water jet lamp 柱头灯Christmas lamp 圣诞灯circuit board 电路板cold cathode 冷阴极color mixer混色器color rendering 演色性color temperature 色温color temperature cross fadings 色温交叉演变color washlight 颜色渐变compound light lamp 复光灯conditioning signal调光信号control signal 控制信号control unit 控制元件courtyard lighting 庭院灯daylight lamp/fluorescent lamp 日光灯/荧光灯decoiling unit 开卷机decoration bulb 装饰灯decorative lighting 装饰灯具dichroic filter 二向色镜片dimension 尺寸dimensions 外观规格dimensionality 维度dimmer 调光器diode 二极管direct glare 直接眩光/直射direct illumination 直接照明direct light ray 直接光线directive lighting 指示性照明direct-current Generators 直流发动机discharge lamps气体效电灯discoloration of pigments & textile fibres 色素的变色dissociation 分解double coil lamp 双绕灯丝灯泡down light 大堂射灯electric board 调节电控板electric light/electric lamp 电灯electric-discharge lamp 放电灯electric(al) input interface 电控输入端electronic senor light 电子感应灯electronic feeder unit 电子馈电元件emergency lamp 应急灯end mark/end of file mark 结束标记end of tape marker 带末端标记energy saving lamp/ESL 节能灯engineering Lamp 工程灯environmental protection lamp 环保灯explosion-proof lamp/explosion-proof luminaries 防爆灯exposed conductor 外露导电体Exposing Lamp 夜灯/曝光灯extra-high voltage trigger超高压触发器filament bulb 白炽灯泡filament image 灯丝象filament saturation 灯丝饱和firework lamp 烟花灯fixture/luminaire 灯具flash bulbmagnesium light 镁光灯flash rate 闪光频率flashing amber 闪光器flood lighting vehicle 照明车floodlight 泛光体/泛光灯floor lamp/standard lamp 落地灯flower lamp 花灯fluorescent lamp 荧光灯/日光灯fluorescent lamp holders荧光灯/日光灯灯头fluorescent light fixtures 荧光灯支架fluorescent lighting fixture 日光灯支架focus lamp/spotlight 聚光灯fog light tell-tale 雾灯信号灯fog-proof light 防雾灯fragrance Lamp 香熏灯frame lamp 架子灯frame lamp/worklite（工作灯）支架灯frosted bulb 磨砂灯泡gas discharge lamp 气体放电灯gas incandescent lamp 充气白炽灯gas-filled lamp 充气灯glare 眩光goss (瓷器)用戈斯氏瓷料制的grassplot lamp/green ground lamp/ lawn lamp 草坪灯green ground lamp/grassplot lamp 草地灯green light 绿灯ground buried light 埋地灯guest room lamp 客房灯HI beam （远光）大灯high-efficient energy-saving reflective lamp chassis 高效节能反射灯盘highlight strength 反光光强high-pole lamp 高杆灯hood downlight 罩灯hose lamp 软管灯ignitor 点火ignitor current 点火器电流Illuminance/E 照度单位：lxilluminance/intensity of illumination 照度illuminant color/Glow Colors 发光颜色/光源色illumination 照明/照明度/照度illumination area 照明面积illumination coefficient 光照系数illumination distance 光照距离illumination time 光照时间incandescence/incandescent lamp白炽灯incandescent arc lamp 白炽弧光灯incandescent bulb/incandescent light bulbs 白炽灯泡inductive & electric 电感式、电子式infrared 红外线的infrared lamp 红外线灯input power 输入功率input power control 输入电源控制input resistance 输入电阻input voltage 输入电压input work 输入功intensity/luminous intensity/radiant intensity/I 光强度/发光强intensity of light光的强度invisible Light 不可见光invite public bidding，tenderee 工程招标invite public bidding，tenderee 企业招标invite public bidding，tenderee 政府招标Iodine gallium light 碘镓灯Iodine tungsten lamp 碘钨灯irradiance 光照度/颜色kilowatt 千瓦lamp 电灯/人工光源lamp black 灯黑/灯烟lamp box 灯箱lamp bracket 车灯架lamp bracket 灯具支架/光管支架lamp cap/a socket for a light bulb/a burner/lamp holder/bulb holder 管帽/灯头/灯泡头lamp characteristics 灯质lamp condenser lens 光源聚光透镜lamp cover 灯罩lamp cup 灯杯lamp disc/lamp house 灯盘/灯罩lamp driver 灯驱动器lamp embryo 灯胚lamp fittings 灯具配件lamp holder 灯头lamp holder switch 灯头开关lamp holder/lamp jack/lamp base/lamp cap/socket pin/cap 灯座/管座/灯头/灯泡头/管帽lamp housing 灯壳lamp oil 灯油lamp pole 灯杆lamp ring 灯圈lamp scale 灯标度lamp seat/lamp carrier 灯座lamp shade/lamp screen/lamp-chimney/lampshade/smokebell /lamp-house 灯罩lamp shielding angle 电灯遮光角lamp switch 灯开关/电灯开关lamp test 灯测试lamp-chimney/lampshade/smokebell's form/mode/type/style 灯罩型式lamp-chimney/lampshade/smokebell's materials/lamp-shade 灯罩材质lamp-house's power 光源功率lamp-house's type/form/style/mode 光源类型/光源形式lamps and lanterns 灯具lampshade paper 灯罩纸lamp-stand 灯台landscape lamp/landscape lighting 景观灯/观景灯landscape lighting 景观照明lawn lamp 草坪灯/草地灯LDPE 低密度聚乙烯lead 导线/铅lead wire 导线lead-in 引入线LED 发光二极管led cover LED灯罩Light and radiation 光及幅射light beacon 灯桩light beam 光束light central height 光中心高度light centre length 发光中心强度light color 光色LIGHT DEVICE OF PIT INSPECTION 底坑检修照明装置Light Emitting Diode display 发光二极管显示light fillet weld 轻填角焊接light filter 滤光器/滤光片light flux meter 光通量计light guide 光导管/光导纤维/光制导light guide cap 光导罩light intensity 光强度light loss factor/LLF/maintenance factor 光损失系数light pen 光笔light scantling vessel 轻构船light shield 遮光罩light source filter 光源滤光镜light source unit for fiberoptic 纤维光束光源light source/lamphouse/light/illuminant 光源light switch 照明开关light tender 灯塔补给船light tone光谱分布图light wave 光波light-fixture 灯饰lighthouse due 灯塔税lighthouse tube 灯塔管lighting copper fitting 灯饰铜配件lighting crystal fitting 灯饰水晶配件lighting effect 光照效果lighting equipment 灯饰设备lighting fittings/light fittings 灯饰配件lighting fixture 照明器材luminaire efficiency 灯具效率Luminance 辉度单位cd/m2luminance efficiency 发光效率单位: lm/w luminance measurement grid 照度计算网格luminance uniformity 亮度均匀度luminous intensity 光强度单位: cdmagenta 红紫色magnesium bulb/magnesian bulb 镁灯泡manifest 船单manostat/regulator 稳压器manufacturing engineer 制造工程师maple 淡棕色marble 大理石marble lamp 石艺灯marble stone lamp 云石灯mercury lamp 水银灯mercury lamp 汞灯metal halid lamp 卤化金属灯/复金属灯metal halide 金属卤素灯metal halide lamp 金属卤化物灯metal halogen lamp/metal halid lamp 金卤灯Metal-clad cables 包覆金属电缆metallic reflection 金属反射metallic reflector 金属反射器miniature Edison screw-cap/small Edison screw-cap 小型爱迪生螺旋灯头minimal arc distance 最小电弧距离minimize 成极小minimum detectable partial pressure 最小可检分压强minimum flow-rate 最小流量minimum freeboard 最小干舷minimum load operation 最小负荷操作minimum operating speed 最低工作转速minimum order quantity 起订量/最小订单量minimum quantity 最小数量minimum thermometer 最低温度计/最低温度表minimum turning diameter test 最小转弯直径试验minimum variance estimation 最小方差估计minor 次要/局部mirror front lamp 镜前灯mosquito killer lamp 灭蚊灯mother board 母板motion picture lamp 动感画灯Motor Elements and Power Supply 电机电器及电源供应MOV 贴片压敏电阻Movable light-source 可移动光源MP，PM 最大输出功率narrow gap one-side automatic welding 窄间隙单面自动电弧natatorium lamp 游泳池灯具National Synchrotron Light Source 国家同步幅射光源natural vibration 自动振动Navigation tree 导航树navy blue/oxfordNebulization 喷雾作用Nebulizer 喷雾器necking down 缩口needle 针阀neon bulb 氖灯泡Neon lamp 氖灯/霓虹灯neon lamp/neon light/neon sign 霓虹灯NEON SIGN 氖灯parallel connection 并联photomatric data 配光曲线图potentiometer 电位计，分压计power factor 功率因数power suppliers 电源potentiometer 电。
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Optical Thin Plate
\
Nd:YAG Rod
Figure 1. Schematic cross section of the pumping module. 296
Advanced Solid State Lasers
297
Figure 2 shows the fluorescence intensity profile at 1064 nm, observed from the rod axis with a CCD camera. The pumping distribution has nearly top-hat profile. Uniform pumping distribution is required for stable high-brightness opemtion by suppressing thermal-lensingvariations within the rod cross section [ll]. The thermal-lensing difference between the center 2 mm-diameter region and the surrounding region was negligible small within the measurement emr. The thermal-lensing degree was defined by the focal length of a collimated He-Ne laser beam after passing through the pumped Nd: YAG rod.
Low-brightness Operation
Figure 4 shows the laser output (a) as a h c t i o n of the total pumping power extracted from diode bars, and (b) as a function of the electric input power for diode bars. A conventional symmetric stable resonator (without 90" rotator ) was applied to this low-brightness operation, because the thermal bifocusing is negligible for this operation.
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(D
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Figure 2. Fluorescence intensity profile at 1064 nm observed from the rod axis with a CCD camera.
O
100
0.0
200
300
400
Pumping Diode Power (W)
Experimental setup for the bifocusing compensation [ 111 is schematically shown in Fig. 3. The bifocusing compensation consists of a symmetrical stable cavity and a quartz 90"-polarkition rotator placed between two uniformly pumped Nd: YAG mds. The thermally induced bifocusing in the Nd: YAG rod for two polarization beams along the radial direction (r polarization) and the tangential direction ($ polarization) is canceled out by switchmg one polarization to the other using the 90" rotator. Therefore, the refractive power throughout two rods becomes nearly identical regardless of the beam position and the polarization direction within the rod cross section. The output power was measured with a calorimetric power meter, and the beam quality was also measured simultaneously by a Coherent's M2 meter.
High-power high-efficient diode-side-pumped Nd: YAG laser
Shuichi Fujikawa, Tetsuo Kojima, and Koji Yasui Advanced Technology R&D Center, Mitsubishi Electric Corporation 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan E-mail: fujikawa@lap.crl.melco.co. jp
A b st rac t We have demonstrated high-power and high-efficient performance of a cw Nd: YAG laser with simple and scalable side-pumping coxQuration. The " moutput u power of 147 W was obtained with the electric efficiency of 14.8 %. T h s is to our knowledge, the highest efficiency reported for diode-side-pumped Nd: YAG lasers. Highbrightness operation was also camed out by applying bifocusing compensation of the Nd: YAG md. The best beam quality of M2 = 5.9 was obtained with the output power of 107 W. The brightness is calculated to be 272 MWtcm2sr. Key Words Diode laser arrays, Infrared and far-infrared lasers, Laser resonators. Introduction Precise laser machining such as drilling, cutting, weldmg demands high-power, higkefficient, and long-lifetime solidstate lasers. A diode-pumped solid-state laser has become one of the solution for these requirements with recent hfetime improvement of commercially available high-power diode lasers [l]. Diode-end-pumped configuration is an efficient scheme [2],[3],[4],[5], and it is easy to generate TEM00 beams efficiently. However, the power scalability of the end-pumped confguration is prevented by the fracture limit of laser materials [5]. On the other hand, diode-sidepumped configuration has excellent scalability and output power of more than 300W has been demonstrated by using slab laser systems[6],[7], rod geometry with bare-diodedevices[8] and rod geometry with fiber-coupled diode lasers[9]. However, such configurations are generally complicated and ineficient, and result in h g h cost system. In this paper, we describe hgh-power performance of a cw Nd: YAG laser with a new diode-side-pumping configuration consisted of a close-coupled dlffusive reflector
OSA TOPS Vol. I O Advanced Solid State Lasers, I997 Clifford R. Pollock and Walter R. Bosenberg (ed.) 0 1997 Optical Sociery ofAmerica