25lc1024--

D009
ICC Read Operating current
— —
10 5
mA mA mA mA A A A A
D010 D011
ICC Write ICCS Standby current
— — — —
7 5 20 12
D012
ICCSPD
Deep power-down current
— —
2010 Microchip Technology Inc.
DS22064D-page 1
25LC1024
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (†)
VCC .............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature .................................................................................................................................-65°C to 150°C Ambient temperature under bias ...............................................................................................................-40°C to 125°C ESD protection on all pins ..........................................................................................................................................4 kV † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability.
25LC1024
1 Mbit SPI Bus Serial EEPROM
Device Selection Table
Part Number 25LC1024 VCC Range 2.5-5.5V Page Size 256 Byte Temp. Ranges I,E Packages P, SM, MF
Industrial (I): Automotive (E): Characteristic Clock frequency CS setup time CS hold time CS disable time Data setup time Data hold time CLK rise time CLK fall time Clock high time Clock low time Clock delay time Clock enable time Output valid from clock low Output hold time Output disable time HOLD setup time HOLD hold time HOLD low to output High-Z HOLD high to output valid CS High to Standby mode CS High to Deep powerdown Chip erase cycle time Sector erase cycle time Internal write cycle time Min. — — 25 50 50 100 50 5 10 10 20 — — 25 50 25 50 50 50 — — 0 — — 10 20 10 20 15 30 15 30 — — — — — TA = -40°C to +85°C TA = -40°C to +125°C Max. 20 10 — — — — — — — — — 20 20 — — — — — — 25 50 — 25 50 — — — — — — — — 100 100 10 10 6 Units MHz MHz ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns s s ms ms ms VCC = 2.5V to 5.5V VCC = 2.5V to 5.5V Conditions 4.5V VCC 5.5V (I) 2.5V VCC 5.5V (I, E) 4.5V VCC 5.5V (I) 2.5V VCC 5.5V (I, E) 4.5V VCC 5.5V (I) 2.5V VCC 5.5V (I, E) — 4.5V VCC 5.5V (I) 2.5V VCC 5.5V (I, E) 4.5V VCC 5.5V (I) 2.5V VCC 5.5V (I, E) (Note 1) (Note 1) 4.5V VCC 5.5V (I) 2.5V VCC 5.5V (I, E) 4.5V VCC 5.5V (I) 2.5V VCC 5.5V (I, E) — — 4.5V VCC 5.5V (I) 2.5V VCC 5.5V (I, E) (Note 1) 4.5V VCC 5.5V (I) 2.5V VCC 5.5V (I, E) 4.5V VCC 5.5V (I) 2.5V VCC 5.5V (I, E) 4.5V VCC 5.5V (I) 2.5V VCC 5.5V (I, E) 4.5V VCC 5.5V (I) 2.5V VCC 5.5V (I, E) (Note 1) 4.5V VCC 5.5V (I) 2.5V VCC 5.5V (I, E) — — — — Byte or Page mode and Page Erase AC CHARACTERISTICS Param. No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Sym. FCLK TCSS TCSH TCSD Tsu THD TR TF THI TLO TCLD TCLE TV THO TDIS THS THH THZ
TABLE 1-1:
DC CHARACTERISTICS
Industrial (I): Automotive (E): Min. .7 VCC -0.3 -0.3 — VCC -0.2 — — — TA = -40°C to +85°C TA = -40°C to +125°C Max. VCC +1 0.3 VCC 0.2 VCC 0.4 — ±1 ±1 7 Units V V V V V A A pF VCC2.7V VCC < 2.7V IOL = 2.1 mA IOH = -400 A CS = VCC, VIN = VSS or VCC CS = VCC, VOUT = VSS or VCC TA = 25°C, CLK = 1.0 MHz, VCC = 5.0V (Note) VCC = 5.5V; FCLK = 20.0 MHz; SO = Open VCC = 2.5V; FCLK = 10.0 MHz; SO = Open VCC = 5.5V VCC = 2.5V CS = VCC = 5.5V, Inputs tied to VCC or VSS, 125°C CS = VCC = 5.5V, Inputs tied to VCC or VSS, 85°C CS = VCC = 2.5V, Inputs tied to VCC or VSS, 85°C CS = VCC = 2.5V, Inputs tied to VCC or VSS, 125°C VCC = 2.5V to 5.5V VCC = 2.5V to 5.5V Test Conditions
DC CHARACTERISTICS Param. No. D001 D002 D003 D004 D005 D006 D007 D008 Sym. VIH1 VIL1 VIL2 VOL VOH ILI ILO CINT Characteristic High-level input voltage Low-level input voltage Low-level output voltage High-level output voltage Input leakage current Output leakage current Internal capacitance (all inputs and outputs)
Package Types (not to scale)
DFN
25LC1024
CS 1 SO 2 WP 3 VSS 4
(MF)
8 7 6 5 VCC HOLD SCK SI
PDIP/SOIJ
(P, SM) 25LC1024
CS SO WP VSS 1 2 3 4 8 7 6 5 VCC HOLD SCK SI
1 2
Note:
This parameter is periodically sampled and not 100% tested.
DS22064D-page 2
2010 Microchip TechBLE 1-2: AC CHARACTERISTICS
Description:
The Microchip Technology Inc. 25LC1024 is a 1024 Kbit serial EEPROM memory with byte-level and pagelevel serial EEPROM functions. It also features Page, Sector and Chip erase functions typically associated with Flash-based products. These functions are not required for byte or page write operations. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled by a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. The 25LC1024 is available in standard packages including 8-lead PDIP and SOIJ, and advanced 8-lead DFN package. All devices are Pb-free.
Features:
• 20 MHz max. Clock Speed • Byte and Page-level Write Operations: - 256 byte page - 6 ms max. write cycle time - No page or sector erase required • Low-Power CMOS Technology: - Max. Write current: 5 mA at 5.5V, 20 MHz - Read current: 7 mA at 5.5V, 20 MHz - Standby current: 1A at 2.5V (Deep power-down) • Electronic Signature for Device ID • Self-Timed Erase and Write Cycles: - Page Erase (6 ms max.) - Sector Erase (10 ms max.) - Chip Erase (10 ms max.) • Sector Write Protection (32K byte/sector): - Protect none, 1/4, 1/2 or all of array • Built-In Write Protection: - Power-on/off data protection circuitry - Write enable latch - Write-protect pin • High Reliability: - Endurance: 1M erase/write cycles - Data Retention: >200 years - ESD Protection: >4000V • Temperature Ranges Supported: - Industrial (I): -40C to +85C - Automotive (E): -40°C to +125°C • Pb-Free and RoHS Compliant