Secondary emission cathode and tube
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
专利名称：Secondary emission cathode and tube
发明人：Macmaster, George H.,Nichols, Lawrence J.
申请号：EP86310022.8
申请日：19861222
公开号：EP0227463A2
公开日：
19870701
专利内容由知识产权出版社提供
专利附图：
摘要：A crossed-field amplifier (10) has permanent magnets (22,23), pole pieces (20,21), a cylindrical anode (12), and a cathode (11) in the form of a water-cooled
cylindrical heat sink (34) with radially extending portions (35) having outer faces coated with a P-N junction semiconductor (37) which is biased to the conductive state to cause
the crossed-field amplifier (10) to amplify. The P and N regions (39,38) of the semiconductor (37) are connected to a cathode modulator (57) which is pulsed to produce conduction in the P-N junction (61) and thereby allow secondary emission from the cathode (11) into an interaction space (19) between the semiconductor (37) and an anode slow wave structure (14) that receives RF drive pulses from a source (58). Reverse bias voltage applied by the modulator (57) prevents secondary emission from the cathode (11). Only low voltages need be applied to the cathode P-N junction (61) to completely deactivate the crossed-field amplifier (10). Removal of the RF drive pulse applied to the anode-slow-wave circuit (14,15,16) and removal of the DC high voltage power supply (29) are not required.
申请人：RAYTHEON COMPANY
地址：141 Spring Street Lexington Massachusetts 02173 US
国籍：US
代理机构：Jackson, David Spence
更多信息请下载全文后查看。