BAS520-02V-GS08中文资料

BAS520-02VDocument Number 85846Rev. 1.2, 29-Jun-05Vishay Semiconductors1Small Signal Schottky DiodeFeatures•These diodes feature very low turn-on voltage and fast switching.•These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. •Space saving SOD-523 package •Lead (Pb)-free component •Component in accordance toRoHS 2002/95/EC and WEEE 2002/96/ECMechanical DataCase: SOD-523 Plastic caseMolding Compound Flammability Rating: UL 94 V-0Terminals: High temperature soldering guaranteed: 260°C/10 sec. at terminals Weight: approx. 1.6 mgPackaging Codes/Options:GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/boxParts TableAbsolute Maximum RatingsT amb = 25°C, unless otherwise specifiedThermal CharacteristicsT amb = 25°C, unless otherwise specifiedPartOrdering codeMarkingRemarksBAS520-02VBAS520-02V-GS18 or BAS520-02V-GS08TTape and ReelParameterT est conditionSymbol Value Unit Repetitive peak reverse voltage V RRM 30V Forward continuous current T amb = 25°C I F 200mA Power dissipationT amb = 25°CP tot200mWParameterT est conditionSymbol Value Unit Junction soldering point R thJS 100K/W Junction temperature T j 125°C Storage temperature rangeT S- 55 to +125°C 2Document Number 85846Rev. 1.2, 29-Jun-05BAS520-02VVishay Semiconductors Electrical CharacteristicsT amb = 25°C, unless otherwise specifiedTypical Characteristics (Tamb = 25 °C unless otherwise specified)ParameterTest conditionSymbol Min Typ.MaxUnit Reverse breakdown voltage I R = 1 µA (pulsed)V (BR)30V Leakage current Pulse test V R = 30 V , t p < 300 µs I R 0.51µA Forward voltagePulse test t p < 300 µs, I F = 1.0 mAV F 320mV Pulse test t p < 300 µs, I F = 200 mA,V F 600mV Diode capacitance V R = 0 V , f = 1 MHz C tot 2530pF Reverse recovery timeI F = 10 mA, I R = 10 mA, I rr = 1 mA, R L = 100 Ωt rr10nsFigure 1. Typical Capacitance vs. Reverse Voltage 0510*******481216202428323618960V R -Reverse V oltage (V)C -D i o d e C a p a c i t a n c e (p F )D18961100100.10.0110001F I -F o r w a r d C u r r e n t (m A )Figure 3. Typical Reverse Voltage vs. Reverse Current18962I R -Reverse Current (µA )BAS520-02VDocument Number 85846Rev. 1.2, 29-Jun-05Vishay Semiconductors3Package Dimensions in mm (Inches) 4Document Number 85846Rev. 1.2, 29-Jun-05BAS520-02VVishay SemiconductorsOzone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyDocument Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。