IRG4BC30FD中文资料

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IRG4BC20KD中文资料

ParameterMax.UnitsV CESCollector-to-Emitter Voltage 600VI C @ T C = 25°C Continuous Collector Current 16I C @ T C = 100°C Continuous Collector Current 9.0I CM Pulsed Collector Current Q32AILMClamped Inductive Load Current R 32I F @ T C = 100°C Diode Continuous Forward Current 7.0I FM Diode Maximum Forward Current 32t sc Short Circuit Withstand Time 10µs V GEGate-to-Emitter Voltage± 20V P D @ T C = 25°C Maximum Power Dissipation 60P D @ T C = 100°C Maximum Power Dissipation 24T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw.10 lbf•in (1.1 N•m)IRG4BC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEFeaturesV CES = 600VV CE(on) typ. = 2.27V@V GE = 15V, I C = 9.0AShort Circuit RatedUltraFast IGBT4/24/2000• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, V GE = 15V • Generation 4 IGBT design provides tighterparameter distribution and higher efficiency than previous generation• IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations• Industry standard TO-220AB packageBenefitsPD -91599AParameter Min.Typ.Max.UnitsR θJC Junction-to-Case - IGBT –––––– 2.1R θJC Junction-to-Case - Diode–––––– 3.5°C/WR θCS Case-to-Sink, flat, greased surface–––0.50–––R θJA Junction-to-Ambient, typical socket mount ––––––80WtWeight–––2 (0.07)–––g (oz)Thermal ResistanceAbsolute Maximum RatingsW• Latest generation 4 IGBTs offer highest power density motor controls possible• HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses• This part replaces the IRGBC20KD2 and IRGBC20MD2 products• For hints see design tip 97003 1IRG4BC20KDParameter Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on)—3451I C = 9.0A Q ge Gate - Emitter Charge (turn-on)— 4.97.4nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on)—1421V GE = 15V t d(on)Turn-On Delay Time —54—t r Rise Time —34—T J = 25°Ct d(off)Turn-Off Delay Time —180270I C = 9.0A, V CC = 480V t f Fall Time —72110V GE = 15V, R G = 50ΩE on Turn-On Switching Loss —0.34—Energy losses include "tail"E off Turn-Off Switching Loss —0.30—mJ and diode reverse recovery E ts Total Switching Loss —0.640.96See Fig. 9,10,14t sc Short Circuit Withstand Time 10——µs V CC = 360V, T J = 125°CV GE = 15V, R G = 50Ω , V CPK < 500Vt d(on)Turn-On Delay Time —51—T J = 150°C,See Fig. 11,14t rRise Time—37—I C = 9.0A, V CC = 480Vt d(off)Turn-Off Delay Time —220—V GE = 15V, R G = 50Ωt f Fall Time—160—Energy losses include "tail"E ts Total Switching Loss—0.85—mJ and diode reverse recovery L E Internal Emitter Inductance —7.5—nH Measured 5mm from package C ies Input Capacitance —450—V GE = 0V C oes Output Capacitance—61—pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance —14—ƒ = 1.0MHz t rr Diode Reverse Recovery Time —3755ns T J = 25°C See Fig.—5590T J = 125°C 14 I F = 8.0A I rr Diode Peak Reverse Recovery Current — 3.5 5.0A T J = 25°C See Fig.— 4.58.0T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge —65138nC T J = 25°C See Fig.—124360T J = 125°C 16 di/dt = 200Aµs di (rec)M /dtDiode Peak Rate of Fall of Recovery —240—A/µs T J = 25°C See Fig.During t b—210—T J = 125°C 17Parameter Min.Typ.Max.Units ConditionsV (BR)CES Collector-to-Emitter Breakdown Voltage S 600——V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage —0.49—V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage — 2.27 2.8I C = 9.0A V GE = 15V— 3.01—V I C = 16ASee Fig. 2, 5— 2.43—I C = 9.0A, T J = 150°C V GE(th)Gate Threshold Voltage 3.0— 6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage —-10—mV/°CV CE = V GE , I C = 250µA g feForward Transconductance T 2.9 4.3—S V CE = 100V, I C = 9.0A I CES Zero Gate Voltage Collector Current ——250µAV GE = 0V, V CE = 600V——1000V GE = 0V, V CE = 600V, T J = 150°C V FM Diode Forward Voltage Drop — 1.4 1.7VI C = 8.0A See Fig. 13— 1.3 1.6I C = 8.0A, T J = 150°C I GES Gate-to-Emitter Leakage Current ——±100nAV GE = ±20VSwitching Characteristics @ T J = 25°C (unless otherwise specified)Electrical Characteristics @ T J = 25°C (unless otherwise specified)nsnsIRG4BC20KD 3Fig. 1 - Typical Load Current vs. Frequency(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4BC20KDFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4BC20KD 5Fig. 7 - Typical Capacitance vs.Collector-to-Emitter VoltageFig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageFig. 9 - Typical Switching Losses vs. GateResistance Fig. 10 - Typical Switching Losses vs.Junction TemperatureCollector-to-Emitter CurrentFig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current0.11101000.40.81.21.62.02.42.83.2FM F I n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A )Forward Voltage Drop - V (V)IRG4BC20KD 7Fig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt1002003004005001001000fdi /dt - (A/µs)R R Q - (n C )1001000100001001000fdi /dt - (A/µs)d i (r e c )M /d t - (A /µs )204060801001001000fdi /dt - (A/µs)t - (n s)r r 1101001001000fdi /dt - (A/µs)I - (A )I RR MIRG4BC20KDFig. 18a - Test Circuit for Measurement ofI LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t ft1t2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrIRG4BC20KD 9V g G A T E S IG NA LDE V ICE U NDE R T E S TCUR RE N T D.U.T.V O LT A G E IN D.U.T.CUR RE N T IN D1t0t1t2Figure 19. Clamped Inductive Load TestCircuit Figure20. Pulsed Collector CurrentTest Circuit=480V4 X I C @25°CFigure 18e. Macro Waveforms for Figure 18a's Test CircuitIRG4BC20KDNotes:Q Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20)R V CC =80%(V CES ), V GE =20V, L=10µH, R G = 50Ω (figure 19)S Pulse width ≤ 80µs; duty factor ≤ 0.1%.T Pulse width 5.0µs, single shot.Case Outline TO-220AB0.55 (.022)0.46 (.018)3 X2.92 (.115)2.64 (.104)1.32 (.052)1.22 (.048)- B -4.69 (.185)4.20 (.165)3.78 (.149)3.54 (.139)- A -6.47 (.255)6.10 (.240)1.15 (.045) M IN4.06 (.160)3.55 (.140)3 X3.96 (.160)3.55 (.140)3 X 0.93 (.037)0.69 (.027)0.36 (.014) M B A M10.54 (.415)10.29 (.405)2.87 (.113)2.62 (.103)15.24 (.600)14.84 (.584)14.09 (.555)13.47 (.530)1.40 (.055)1.15 (.045)3 X2.54 (.100)2X1 2 34CONFORMS TO JEDEC OUTLINE TO-220ABD im e ns io ns in M illim e ters a nd (In c he s)LE A D A S S IG N M E N T S 1 - G A TE2 - C O LLE C TO R3 - EM IT TE R4 - C O LLE C TO RN O TE S :1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14.5M , 1982.2 C O N TR O LLIN G D IM E N S IO N : IN C H.3 D IM E N S IO N S A R E S H O W N M ILLIM E TE R S (IN C HES ).4 C O N FO R M S TO JE D E C O U TLIN E T O -220AB.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936Data and specifications subject to change without notice. 10/00元器件交易网Note: For the most current drawings please refer to the IR website at:/package/。

GF4C旋转限位开关(黄盒子)使用说明书

目录1、概述 (2)2、Technical Specifications 技术规格 (3)3、Technical Specifications of the Switches 开关技术规格 (3)4、Standard Limit Switch Codes 标准的限位开关编码 (4)5、Use and Maintenance Instructions 使用和维护说明书 (4)5.1、Steps for the proper installation of the limit switch 限位开关安装步骤 (6)5.2 、Periodic maintenance steps 定期维护步骤 (7)附录1 GF4C限位开关部件明细图 (9)GF4C旋转限位开关（黄盒子）1、概述The rotary limit switch is used to control the movement of industrial machinery. It operates 旋转限位开关被用来控制工业机械的运转，as an auxiliary controller of electrical motors through a power interface, such as a contactor or通过电源接口连接作为电动机的一个辅助控制器，好比一个开关或者PLC。

PLC . Suitable for heavy duty, its shaft is connected to the motor and, after a set number of revolutions ,the cams operate the switches, thus starting the predetermined movement . A worm 适用于重载，它的轴连接到电机，并且通过设置转数控制开关，实现预设的操作。

一个涡轮gear and a helical toothed gear combined with one or more pairs of straight toothed gears are used for the transmission of the movement from the input shaft to the output shaft.和一个螺旋形的齿轮连接一个或者多个直齿，用作主动轴和从动轴间动作的传动装置。

LM4040D30IDBZRG4中文资料

FEATURESAPPLICATIONS* Pin 3 is attached to substrate and must beconnected to ANODE or left open.DBZ (SOT-23) PACKAGE(TOP VIEW)DCK (SC-70) PACKAGE(TOP VIEW)ANODENCCATHODELP (TO-92/TO-226) PACKAGE(TOP VIEW)NC – No internal connectionNC – No internal connection DESCRIPTION/ORDERING INFORMATIONPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY2005–REVISED SEPTEMBER2006•Fixed Output Voltages of2.048V,2.5V,3V,4.096V,5V,8.192V,and10V•Tight Output Tolerances and LowTemperature Coefficient–Max0.1%,100ppm/°C–A Grade–Max0.2%,100ppm/°C–B Grade–Max0.5%,100ppm/°C–C Grade–Max1.0%,150ppm/°C–D Grade•Low Output Noise…35µV RMS Typ•Wide Operating Current Range…45µA Typ to15mA•Stable With All Capacitive Loads;No OutputCapacitor Required•Available in Extended TemperatureRange…–40°C to125°C•Data-Acquisition Systems•Power Supplies and Power-Supply Monitors•Instrumentation and Test Equipment•Process Controls•Precision Audio•Automotive Electronics•Energy Management•Battery-Powered EquipmentThe LM4040series of shunt voltage references are versatile,easy-to-use references that cater to a vast array of applications.The2-pin fixed-output device requires no external capacitors for operation and is stable with all capacitive loads.Additionally,the reference offers low dynamic impedance,low noise,and low temperature coefficient to ensure a stable output voltage over a wide range of operating currents and temperatures.The LM4040uses fuse and Zener-zap reverse breakdown voltage trim during wafer sort to offer four output voltage tolerances,ranging from0.1%(max)for the A grade to1%(max)for the D grade.Thus,a great deal of flexibility is offered to designers in choosing the best cost-to-performance ratio for their applications.Packaged in space-saving SC-70and SOT-23-3packages and requiring a minimum current of45µA(typ),the LM4040also is ideal for portable applications.The LM4040xI is characterized for operation over an ambient temperature range of–40°C to85°C.The LM4040xQ is characterized for operation over an ambient temperature range of–40°C to125°C.Please be aware that an important notice concerning availability,standard warranty,and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.PRODUCTION DATA information is current as of publication date.Copyright©2005–2006,Texas Instruments Incorporated Products conform to specifications per the terms of the TexasInstruments standard warranty.Production processing does notnecessarily include testing of all parameters.PRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006ORDERING INFORMATIONDEVICE ORDERABLE TOP-SIDE T AV KAPACKAGE (1)GRADEPART NUMBER MARKING (2)SC-70(DCK)Reel of 3000LM4040A20IDCKR MS_Reel of 3000LM4040A20IDBZR SOT-23-3(DBZ)4MC_2.048VReel of 250LM4040A20IDBZT Bulk of 1000LM4040A20ILP TO-92/TO-226(LP)PREVIEW Reel of 2000LM4040A20ILPR SC-70(DCK)Reel of 3000LM4040A25IDCKR P2_Reel of 3000LM4040A25IDBZR SOT-23-3(DBZ)4NG_2.5VReel of 250LM4040A25IDBZT Bulk of 1000LM4040A25ILP TO-92/TO-226(LP)PREVIEW Reel of 2000LM4040A25ILPR SC-70(DCK)Reel of 3000LM4040A30IDCKR P9_Reel of 3000LM4040A30IDBZR SOT-23-3(DBZ)4M6_3VReel of 250LM4040A30IDBZT Bulk of 1000LM4040A30ILP TO-92/TO-226(LP)PREVIEW Reel of 2000LM4040A30ILPR A grade:SC-70(DCK)Reel of 3000LM4040A41IDCKR P4_0.1%initial Reel of 3000LM4040A41IDBZR accuracy SOT-23-3(DBZ)4M2_–40°C to 85°Cand 4.096VReel of 250LM4040A41IDBZT 100ppm/°C Bulk of 1000LM4040A41ILP temperature TO-92/TO-226(LP)PREVIEW Reel of 2000LM4040A41ILPR coefficientSC-70(DCK)Reel of 3000LM4040A50IDCKR N5_Reel of 3000LM4040A50IDBZR SOT-23-3(DBZ)4NA_5VReel of 250LM4040A50IDBZT Bulk of 1000LM4040A50ILP TO-92/TO-226(LP)PREVIEW Reel of 2000LM4040A50ILPR SC-70(DCK)Reel of 3000LM4040A82IDCKR PD_Reel of 3000LM4040A82IDBZR SOT-23-3(DBZ)4NL_8.192VReel of 250LM4040A82IDBZT Bulk of 1000LM4040A82ILP TO-92/TO-226(LP)PREVIEW Reel of 2000LM4040A82ILPR SC-70(DCK)Reel of 3000LM4040A10IDCKR PH_Reel of 3000LM4040A10IDBZR SOT-23-3(DBZ)4NQ_10VReel of 250LM4040A10IDBZT Bulk of 1000LM4040A10ILP TO-92/TO-226(LP)PREVIEWReel of 2000LM4040A10ILPR(1)Package drawings,standard packing quantities,thermal data,symbolization,and PCB design guidelines are available at /sc/package.(2)DBZ/DCK:The actual top-side marking has one additional character that designates the assembly/test site.2Submit Documentation FeedbackPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY2005–REVISED SEPTEMBER2006 ORDERING INFORMATION(continued)DEVICE ORDERABLE TOP-SIDET A V KA PACKAGE(1)GRADE PART NUMBER MARKING(2)SC-70(DCK)Reel of3000LM4040B20IDCKR MT_Reel of3000LM4040B20IDBZRSOT-23-3(DBZ)4MD_2.048V Reel of250LM4040B20IDBZTBulk of1000LM4040B20ILPTO-92/TO-226(LP)PREVIEWReel of2000LM4040B20ILPRSC-70(DCK)Reel of3000LM4040B25IDCKR P3_Reel of3000LM4040B25IDBZRSOT-23-3(DBZ)4NH_2.5V Reel of250LM4040B25IDBZTBulk of1000LM4040B25ILPTO-92/TO-226(LP)PREVIEWReel of2000LM4040B25ILPRSC-70(DCK)Reel of3000LM4040B30IDCKR PA_Reel of3000LM4040B30IDBZRSOT-23-3(DBZ)4M7_3V Reel of250LM4040B30IDBZTBulk of1000LM4040B30ILPTO-92/TO-226(LP)PREVIEWReel of2000LM4040B30ILPRB grade:SC-70(DCK)Reel of3000LM4040B41IDCKR P5_0.2%initialReel of3000LM4040B41IDBZRaccuracy SOT-23-3(DBZ)4M3_–40°C to85°C and 4.096V Reel of250LM4040B41IDBZT100ppm/°C Bulk of1000LM4040B41ILPtemperature TO-92/TO-226(LP)PREVIEWReel of2000LM4040B41ILPRcoefficientSC-70(DCK)Reel of3000LM4040B50IDCKR MX_Reel of3000LM4040B50IDBZRSOT-23-3(DBZ)4NB_5V Reel of250LM4040B50IDBZTBulk of1000LM4040B50ILPTO-92/TO-226(LP)PREVIEWReel of2000LM4040B50ILPRSC-70(DCK)Reel of3000LM4040B82IDCKR PE_Reel of3000LM4040B82IDBZRSOT-23-3(DBZ)4NM_8.192V Reel of250LM4040B82IDBZTBulk of1000LM4040B82ILPTO-92/TO-226(LP)PREVIEWReel of2000LM4040B82ILPRSC-70(DCK)Reel of3000LM4040B10IDCKR PJ_Reel of3000LM4040B10IDBZRSOT-23-3(DBZ)4NR_10V Reel of250LM4040B10IDBZTBulk of1000LM4040B10ILPTO-92/TO-226(LP)PREVIEWReel of2000LM4040B10ILPR3Submit Documentation FeedbackPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006ORDERING INFORMATION (continued)DEVICE ORDERABLE TOP-SIDE T AV KAPACKAGE (1)GRADEPART NUMBER MARKING (2)SC-70(DCK)Reel of 3000LM4040C20IDCKR MV_Reel of 3000LM4040C20IDBZR SOT-23-3(DBZ)4MQ_2.048VReel of 250LM4040C20IDBZT Bulk of 1000LM4040C20ILP TO-92/TO-226(LP)PREVIEW Reel of 2000LM4040C20ILPR SC-70(DCK)Reel of 3000LM4040C25IDCKR M4_Reel of 3000LM4040C25IDBZR SOT-23-3(DBZ)4MU_2.5VReel of 250LM4040C25IDBZT Bulk of 1000LM4040C25ILP TO-92/TO-226(LP)NCF25I Reel of 2000LM4040C25ILPR SC-70(DCK)Reel of 3000LM4040C30IDCKR PB_Reel of 3000LM4040C30IDBZR SOT-23-3(DBZ)4M8_3VReel of 250LM4040C30IDBZT Bulk of 1000LM4040C30ILP TO-92/TO-226(LP)PREVIEW Reel of 2000LM4040C30ILPR C grade:SC-70(DCK)Reel of 3000LM4040C41IDCKR P6_0.5%initial Reel of 3000LM4040C41IDBZR accuracy SOT-23-3(DBZ)4M4_–40°C to 85°Cand 4.096VReel of 250LM4040C41IDBZT 100ppm/°C Bulk of 1000LM4040C41ILP temperature TO-92/TO-226(LP)PREVIEW Reel of 2000LM4040C41ILPR coefficientSC-70(DCK)Reel of 3000LM4040C50IDCKR MZ_Reel of 3000LM4040C50IDBZR SOT-23-3(DBZ)4NC_5VReel of 250LM4040C50IDBZT Bulk of 1000LM4040C50ILP TO-92/TO-226(LP)PREVIEW Reel of 2000LM4040C50ILPR SC-70(DCK)Reel of 3000LM4040C82IDCKR PF_Reel of 3000LM4040C82IDBZR SOT-23-3(DBZ)4NN_8.192VReel of 250LM4040C82IDBZT Bulk of 1000LM4040C82ILP TO-92/TO-226(LP)PREVIEW Reel of 2000LM4040C82ILPR SC-70(DCK)Reel of 3000LM4040C10IDCKR PK_Reel of 3000LM4040C10IDBZR SOT-23-3(DBZ)4NS_10VReel of 250LM4040C10IDBZT Bulk of 1000LM4040C10ILP TO-92/TO-226(LP)NFC10IReel of 2000LM4040C10ILPR4Submit Documentation FeedbackPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY2005–REVISED SEPTEMBER2006 ORDERING INFORMATION(continued)DEVICE ORDERABLE TOP-SIDET A V KA PACKAGE(1)GRADE PART NUMBER MARKING(2)SC-70(DCK)Reel of3000LM4040D20IDCKR MW_Reel of3000LM4040D20IDBZRSOT-23-3(DBZ)4MV_2.048V Reel of250LM4040D20IDBZTBulk of1000LM4040D20ILPTO-92/TO-226(LP)PREVIEWReel of2000LM4040D20ILPRSC-70(DCK)Reel of3000LM4040D25IDCKR ME_Reel of3000LM4040D25IDBZRSOT-23-3(DBZ)4ME_2.5V Reel of250LM4040D25IDBZTBulk of1000LM4040D25ILPTO-92/TO-226(LP)NFD25IReel of2000LM4040D25ILPRSC-70(DCK)Reel of3000LM4040D30IDCKR PC_Reel of3000LM4040D30IDBZRSOT-23-3(DBZ)4M9_3V Reel of250LM4040D30IDBZTBulk of1000LM4040D30ILPTO-92/TO-226(LP)PREVIEWReel of2000LM4040D30ILPRD grade:SC-70(DCK)Reel of3000LM4040D41IDCKR P7_1.0%initialReel of3000LM4040D41IDBZRaccuracy SOT-23-3(DBZ)4M5_–40°C to85°C and 4.096V Reel of250LM4040D41IDBZT150ppm/°C Bulk of1000LM4040D41ILPtemperature TO-92/TO-226(LP)PREVIEWReel of2000LM4040D41ILPRcoefficientSC-70(DCK)Reel of3000LM4040D50IDCKR M4_Reel of3000LM4040D50IDBZRSOT-23-3(DBZ)4ND_5V Reel of250LM4040D50IDBZTBulk of1000LM4040D50ILPTO-92/TO-226(LP)PREVIEWReel of2000LM4040D50ILPRSC-70(DCK)Reel of3000LM4040D82IDCKR PG_Reel of3000LM4040D82IDBZRSOT-23-3(DBZ)4NP_8.192V Reel of250LM4040D82IDBZTBulk of1000LM4040D82ILPTO-92/TO-226(LP)PREVIEWReel of2000LM4040D82ILPRSC-70(DCK)Reel of3000LM4040D10IDCKR PL_Reel of3000LM4040D10IDBZRSOT-23-3(DBZ)4NT_10V Reel of250LM4040D10IDBZTBulk of1000LM4040D10ILPTO-92/TO-226(LP)NFD10IReel of2000LM4040D10ILPR5Submit Documentation FeedbackPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006ORDERING INFORMATION (continued)DEVICE ORDERABLE TOP-SIDE T AV KA PACKAGE (1)GRADEPART NUMBER MARKING (2)Reel of 3000LM4040C20QDBZR 2.048V4MW_Reel of 250LM4040C20QDBZT C grade:Reel of 3000LM4040C25QDBZR 0.5%initial 2.5V4MA_accuracy Reel of 250LM4040C25QDBZT and SOT-23-3(DBZ)Reel of 3000LM4040C30QDBZR 100ppm/°C 3V 4NJ_temperature Reel of 250LM4040C30QDBZT coefficientReel of 3000LM4040C50QDBZR 5V4NE_Reel of 250LM4040C50QDBZT –40°C to 125°CReel of 3000LM4040D20QDBZR 2.048V4MY_Reel of 250LM4040D20QDBZT D grade:Reel of 3000LM4040D25QDBZR 1.0%initial 2.5V4MB_accuracy Reel of 250LM4040D25QDBZT and SOT-23-3(DBZ)Reel of 3000LM4040D30QDBZR 150ppm/°C 3V 4NK_temperature Reel of 250LM4040D30QDBZT coefficientReel of 3000LM4040D50QDBZR 5V 4NF_Reel of 250LM4040D50QDBZT6Submit Documentation FeedbackAbsolute Maximum Ratings (1)Recommended Operating ConditionsPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006FUNCTIONAL BLOCK DIAGRAMover free-air temperature range (unless otherwise noted)MINMAX UNIT I Z Continuous cathode current–1025mADBZ package206θJA Package thermal impedance (2)(3)DCK package 252°C/W LP package156T J Operating virtual junction temperature 150°C T stg Storage temperature range–65150°C (1)Stresses beyond those listed under "absolute maximum ratings"may cause permanent damage to the device.These are stress ratings only,and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions"is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.(2)Maximum power dissipation is a function of T J (max),θJA ,and T A .The maximum allowable power dissipation at any allowable ambient temperature is P D =(T J (max)–T A )/θJA .Operating at the absolute maximum T J of 150°C can affect reliability.(3)The package thermal impedance is calculated in accordance with JESD 51-7.MINMAX UNIT I Z Cathode current (1)12mA LM4040xxxI –4085T A Free-air temperature °CLM4040xxxQ–40125(1)See parametric tables7Submit Documentation FeedbackLM4040x20I Electrical CharacteristicsPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at industrial temperature range,full-range T A =–40°C to 85°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).8Submit Documentation FeedbackLM4040x20I Electrical CharacteristicsPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at industrial temperature range,full-range T A =–40°C to 85°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).9Submit Documentation FeedbackLM4040x20Q Electrical CharacteristicsPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at extended temperature range,full-range T A =–40°C to 125°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).10Submit Documentation FeedbackLM4040x25I Electrical CharacteristicsPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at industrial temperature range,full-range T A =–40°C to 85°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).LM4040x25I Electrical CharacteristicsPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at industrial temperature range,full-range T A =–40°C to 85°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).LM4040x25Q Electrical CharacteristicsPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at extended temperature range,full-range T A =–40°C to 125°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).LM4040x30I Electrical CharacteristicsPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at industrial temperature range,full-range T A =–40°C to 85°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).LM4040x30I Electrical CharacteristicsPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at industrial temperature range,full-range T A =–40°C to 85°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).LM4040x30Q Electrical CharacteristicsPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at extended temperature range,full-range T A =–40°C to 125°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).LM4040x41I Electrical CharacteristicsPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at industrial temperature range,full-range T A =–40°C to 85°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).LM4040x41I Electrical CharacteristicsPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at industrial temperature range,full-range T A =–40°C to 85°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).LM4040x50I Electrical CharacteristicsPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at industrial temperature range,full-range T A =–40°C to 85°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).LM4040x50I Electrical CharacteristicsPRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at industrial temperature range,full-range T A =–40°C to 85°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).LM4040x50Q Electrical CharacteristicsLM4040PRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at extended temperature range,full-range T A =–40°C to 125°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).LM4040x82I Electrical CharacteristicsLM4040PRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at industrial temperature range,full-range T A =–40°C to 85°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).LM4040x82I Electrical CharacteristicsLM4040PRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at industrial temperature range,full-range T A =–40°C to 85°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).LM4040x10I Electrical CharacteristicsLM4040PRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at industrial temperature range,full-range T A =–40°C to 85°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).LM4040x10I Electrical CharacteristicsLM4040PRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006at industrial temperature range,full-range T A =–40°C to 85°C (unless otherwise noted)(1)Thermal hysteresis is defined as V Z,25°C (after cycling to –40°C)–V Z,25°C (after cycling to 125°C).TYPICAL CHARACTERISTICSTemperature (_C)V Z , C h a n g e (%)1001k1M10k100k Frequency (Hz)Z Z , D y n a m i c O u t p u t I m p e d a n c e(Ω)1001k1M10k100k Frequency (Hz)Z Z , D y n a m i c O u t p u t I m p e d a n ce (Ω)V Z , Reverse Voltage (V)I Z , C a t h o d e C u r r e n t (µA )Frequency (Hz)N o i s e (µV P /H z )1010.1−10123456−10102030405060708090V Z (V )Response Time (µs)V I N (V )6420−2−4−6−8−10−12LM4040PRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006Figure 1.Temperature Drift for Different AverageFigure 2.Output Impedance vs FrequencyTemperature CoefficientsFigure 3.Output Impedance vs FrequencyFigure 4.Temperature Drift for Different AverageTemperature CoefficientFigure 5.Noise Voltage vs Frequency Figure 6.Start-Up CharacteristicsAPPLICATION INFORMATIONStart-Up CharacteristicsR V INOutput CapacitorSOT-23ConnectionsUse With ADCs or DACs5-V Analog SupplyLM4040PRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY 2005–REVISED SEPTEMBER 2006Figure 7.Test CircuitThe LM4040does not require an output capacitor across cathode and anode for stability.However,if an output bypass capacitor is desired,the LM4040is designed to be stable with all capacitive loads.There is a parasitic Schottky diode connected between pins 2and 3of the SOT-23packaged device.Thus,pin 3of the SOT-23package must be left floating or connected to pin 2.The LM4040x-41is designed to be a cost-effective voltage reference as required in 12-bit data-acquisition systems.For 12-bit systems operating from 5-V supplies such as the ADS7842(see Figure 8),the LM4040x-41(4.096V)permits operation with an LSB of 1mV.Figure 8.Data-Acquisition Circuit With LM4040x-41 Cathode and Load CurrentsRS+ǒVS*V ZǓ(IL)I Z)(1)LM4040VV ZR SLM4040PRECISION MICROPOWER SHUNT VOLTAGE REFERENCESLOS456J–JANUARY2005–REVISED SEPTEMBER2006APPLICATION INFORMATION(continued)In a typical shunt-regulator configuration(see Figure9),an external resistor,R S,is connected between the supply and the cathode of the LM4040.R S must be set properly,as it sets the total current available to supply the load(I L)and bias the LM4040(I Z).In all cases,I Z must stay within a specified range for proper operation of the reference.Taking into consideration one extreme in the variation of the load and supply voltage(maximum I L and minimum V S),R S must be small enough to supply the minimum I Z required for operation of the regulator,as given by data-sheet parameters.At the other extreme,maximum V S and minimum I L,R S must be large enough to limit I Z to less than its maximum-rated value of15mA.R S is calculated according to Equation1:Figure9.Shunt RegulatorPACKAGING INFORMATIONOrderableDevice Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)LM4040A10IDBZR ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A10IDBZRG4ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A10IDBZT ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A10IDBZTG4ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A10IDCKR ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A10IDCKRG4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A10ILP PREVIEW TO-92LP 31000TBD Call TI Call TI LM4040A10ILPR PREVIEW TO-92LP 32000TBDCall TI Call TILM4040A20IDBZR ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A20IDBZRG4ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A20IDBZT ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A20IDBZTG4ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A20IDCKR ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A20IDCKRE4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A20IDCKRG4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A25IDBZR ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A25IDBZRG4ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A25IDBZT ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A25IDBZTG4ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A25IDCKR ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A25IDCKRE4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A25IDCKRG4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A25ILP PREVIEW TO-92LP 31000TBD Call TI Call TI LM4040A25ILPR PREVIEW TO-92LP 32000TBDCall TI Call TILM4040A30IDBZR ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A30IDBZRG4ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A30IDBZTACTIVESOT-23DBZ3250Green (RoHS &CU NIPDAULevel-1-260C-UNLIM26-Sep-2007OrderableDeviceStatus (1)Package Type Package Drawing Pins Package QtyEco Plan (2)Lead/Ball FinishMSL Peak Temp (3)no Sb/Br)LM4040A30IDBZTG4ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A30IDCKR ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A30IDCKRE4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A30IDCKRG4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A30IDCKT PREVIEW SC70DCK 5250TBD Call TI Call TI LM4040A30ILP PREVIEW TO-92LP 31000TBD Call TI Call TI LM4040A30ILPM PREVIEW TO-92LP 32000TBD Call TI Call TI LM4040A30ILPR PREVIEW TO-92LP 32000TBDCall TI Call TILM4040A41IDBZR ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A41IDBZRG4ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A41IDBZT ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A41IDBZTG4ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A41IDCKR ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A41IDCKRE4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A41IDCKRG4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A41ILP PREVIEW TO-92LP 31000TBD Call TI Call TI LM4040A41ILPR PREVIEW TO-92LP 32000TBDCall TI Call TILM4040A50IDBZR ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A50IDBZRG4ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A50IDBZT ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A50IDBZTG4ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A50IDCKR ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A50IDCKRE4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A50IDCKRG4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A50ILP PREVIEW TO-92LP 31000TBDCall TI Call TILM4040A82IDBZR ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A82IDBZRG4ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A82IDBZTACTIVESOT-23DBZ3250Green (RoHS &no Sb/Br)CU NIPDAULevel-1-260C-UNLIM26-Sep-2007OrderableDevice Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)LM4040A82IDBZTG4ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A82IDCKR ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040A82IDCKRG4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B10IDBZR ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B10IDBZRG4ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B10IDBZT ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B10IDBZTG4ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B10IDCKR ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B10IDCKRG4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B10ILP PREVIEW TO-92LP 31000TBD Call TI Call TI LM4040B10ILPR PREVIEW TO-92LP 32000TBDCall TI Call TILM4040B20IDBZR ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B20IDBZRG4ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B20IDBZT ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B20IDBZTG4ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B20IDCKR ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B20IDCKRE4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B20IDCKRG4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B25IDBZR ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B25IDBZRG4ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B25IDBZT ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B25IDBZTG4ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B25IDCKR ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B25IDCKRE4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B25IDCKRG4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM4040B25ILP PREVIEW TO-92LP 31000TBD Call TI Call TI LM4040B25ILPR PREVIEW TO-92LP 32000TBDCall TI Call TILM4040B30IDBZRACTIVESOT-23DBZ33000Green (RoHS &CU NIPDAULevel-1-260C-UNLIM26-Sep-2007。

DEIF丹控AGC-4控制器产品说明书V1

发电机组控制器，AGC-4●功能描述●显示面板和菜单结构●PID控制器●参数设置流程●参数清单1. 概述1.1. 警告、法律信息和安全须知 (7)1.1.1. 警告和注意 (7)1.1.2. 法律信息和免责声明 (7)1.1.3. 安全事项 (7)1.1.4. 静电释放注意事项 (7)1.1.5. 出厂设置 (7)1.2. 关于设计参考手册 (7)1.2.1. 综述 (7)1.2.2. 目标用户 (8)1.2.3. 内容和总结构 (8)2. 产品概述2.1. 介绍 (9)2.2. 产品类型 (9)2.3. 选项 (9)2.3.1. 选项 (9)2.4. USW软件警告 (9)2.4.1. USW软件警告 (9)3. 功能描述3.1. 标准功能 (10)3.1.1. 标准功能 (10)3.1.2. 操作模式 (10)3.1.3. 发动机控制 (10)3.1.4. 发电机保护（ANSI） (10)3.1.5. 母排保护（ANSI） (10)3.1.6. 显示面板 (10)3.1.7. M-Logic (11)3.2. 端子排一览 (11)3.2.1. 插槽#1、#2、#5和#6 (12)3.2.2. 插槽#3、#4、#7和#8 (13)3.3. 测量系统 (14)3.3.1. 三相系统 (14)3.3.2. 两相系统 (14)3.3.3. 单相系统 (15)3.4. 应用 (16)3.4.1. 应用和发电机组模式 (16)3.4.2. 市电失电自起动（无返回同步） (16)3.4.3. 市电失电自起动（带返回同步） (17)3.4.4. 孤岛操作 (17)3.4.5. 固定功率/基本负载 (18)3.4.6. 负载逐步上升 (19)3.4.7. 冻结功率分步上升 (19)3.4.8. 调峰 (20)3.4.9. 负载转移 (21)3.4.10. 主电网功率输出（固定功率至主电网） (22)3.4.11. 主电网变送器 (23)3.5. 运行模式描述 (24)3.5.1. 半自动模式 (24)3.5.2. 测试模式 (25)3.5.3. 空载测试 (26)3.5.4. 带载测试 (26)3.5.5. 满载测试 (26)3.5.6. 手动模式 (26)3.5.7. 闭锁模式 (27)3.6. 单线图 (27)3.6.1. 应用说明 (27)3.6.2. 市电失电自起动 (28)3.6.3. 孤岛操作 (28)3.6.4. 固定功率/基本负载 (29)3.6.5. 调峰 (29)3.6.6. 负载转移 (30)3.6.7. 主电网功率输出 (30)3.6.8. 多台发电机组，负载分配（需要选项G3） (31)3.6.9. 多台发电机组，功率管理（需要选项G5） (32)3.7. 流程图 (35)3.7.1. 模式转换 (37)3.7.2. MB分闸时序 (38)3.7.3. GB分闸时序 (39)3.7.4. 停机时序 (40)3.7.5. 起机时序 (41)3.7.6. MB合闸时序 (42)3.7.7. GB合闸时序 (43)3.7.8. 固定功率 (44)3.7.9. 负载转移 (45)3.7.10. 孤岛操作 (46)3.7.11. 调峰 (47)3.7.12. 主电网功率输出 (48)3.7.13. 市电失电自起动 (49)3.7.14. 测试时序 (50)3.8. 时序 (51)3.8.1. 起机时序 (52)3.8.2. 起机时序条件 (53)3.8.3. 运行反馈 (54)3.8.4. 停机时序 (57)3.8.5. 开关控制时序 (59)3.8.6. AMF定时器 (60)4. 显示面板和菜单结构4.1. 介绍 (62)4.2. 显示面板（DU-2） (62)4.2.1. 按钮功能 (62)4.2.2. LED功能 (63)4.3. 菜单结构 (63)4.3.1. 初始窗口 (64)4.3.2. 视图菜单 (64)4.3.3. 参数设置菜单 (65)4.4. 模式概述 (68)4.5. 模式选择 (69)4.6. 密码 (71)4.6.1. 密码 (71)4.6.2. 参数访问 (72)5. 附加功能5.1. 起机功能 (73)5.1.1. 开关量反馈 (73)5.1.2. 模拟量测速器反馈 (74)5.1.3. 滑油压力 (75)5.2. 开关类型 (76)5.3. 开关储能时间 (77)5.3.1. 原理 (77)5.4. 报警抑制 (79)5.4.1. 运行状态（6160） (81)5.5. 访问锁定 (81)5.6. 重叠 (82)5.7. 开关量主网断路器控制 (82)5.8. 指令定时器 (83)5.9. 运行输出 (83)5.10. 频率决定下垂 (85)5.11. 功率和功率因数补偿 (86)5.11.1. 功率补偿 (86)5.11.2. 功率因数补偿 (86)5.12. 发电机组降功率 (86)5.12.1. 输入选择 (87)5.12.2. 降功率参数 (87)5.12.3. 降功率特性 (88)5.13. 怠速运行 (89)5.13.1. 描述 (89)5.13.2. 例子 (90)5.13.3. 开关量输入的配置 (91)5.13.4. 抑制 (91)5.13.5. 运行信号 (91)5.13.6. 怠速流程图 (92)5.13.7. 起机 (92)5.13.8. 停机 (93)5.14. 发动机加热器 (93)5.14.1. 发动机加热器报警 (94)5.15. 主时钟 (94)5.15.1. 补偿时间 (95)5.16. 蓄电池测试 (95)5.16.1. 输入配置 (96)5.16.2. 自动配置 (96)5.16.3. 不对称电池（6430 不对称电池） (97)5.17. 通风 (100)5.17.1. 最大通风报警 (100)5.18. 夏令时/冬令时 (100)5.19. 配电盘故障 (100)5.19.1. 配电盘故障锁定(菜单 6500) (101)5.19.2. 配电盘故障停机(菜单 6510) (101)5.20. 不在自动模式 (101)5.21. 燃油泵逻辑 (101)5.21.1. 注油检查 (102)5.22. 故障等级 (103)5.22.1. 故障等级 (103)5.22.2. 发动机运行 (103)5.22.3. 发动机停机 (104)5.22.4. 故障等级配置 (105)5.23. 非重要负载（NEL）跳闸 (105)5.23.1. 非重要负载跳闸 (105)5.24. 检修时间 (106)5.25. 线路故障监测 (106)5.26. 开关量输入 (108)5.26.1. 功能描述 (109)5.27. 输出 (113)5.27.1. 功能描述 (113)5.28. 多功能输入 (114)5.28.1. 4-20 mA (115)5.28.2. 0-40V直流电压 (115)5.28.3. Pt100/1000 (115)5.28.4. VDO 输入 (115)5.28.5. VDO oil (115)5.28.6. VDO水温 (116)5.28.7. VDO燃油 (117)5.28.8. 可配置输入的图示： (118)5.28.9. 配置 (119)5.28.10. 4-20mA输入的量程 (119)5.28.11. 开关量 (122)5.29. 手动GOV和AVR控制 (122)5.29.1. 手动模式 (123)5.29.2. 半自动模式 (123)5.29.3. 自动和测试模式 (123)5.30. 输入功能选择 (123)5.31. 语言选择 (124)5.32. 状态行文本 (124)5.32.1. 标准文本 (125)5.32.2. 仅与功率管理（选项G5）有关的文本 (128)5.33. 内部蓄电池 (129)5.33.1. 存储备份 (129)5.34. 服务菜单 (129)5.35. 事件日志 (130)5.35.1. 日志 (130)5.35.2. 显示面板 (131)5.36. 计数器 (131)5.37. 脉冲输入计数器 (132)5.38. kWh/kVArh计数器 (132)5.39. 快速设定 (133)5.40. 参数ID (134)5.41. M-Logic (134)5.42. GSM通讯 (134)5.43. USW通讯 (135)5.44. 额定值设置 (136)5.44.1. 如何更改额定值设置 (136)5.45. 测量比例 (137)5.45.1. 测量比例 (137)5.46. 升压变压器和降压变压器 (138)5.46.1. 升压变压器 (138)5.46.2. 升压变压器用矢量组 (139)5.46.3. 设定升压变压器和测量变压器 (146)5.46.4. 降压变压器用矢量组 (147)5.46.5. 设定降压变压器和测量变压器 (149)5.47. 峰值电流要求 (150)5.47.1. 电流热能需求 (150)5.47.2. 电流最大需求 (151)5.48. 风扇逻辑 (151)5.48.1. 风扇参数 (151)5.48.2. 风扇控制输入 (152)5.48.3. 风扇起/停 (153)5.48.4. 风扇输出 (153)5.48.5. 风扇起动延时 (154)5.48.6. 风扇运行反馈 (154)5.48.7. 风扇故障 (155)5.48.8. 风扇运行优先级（运行时间） (155)5.48.9. 风扇优先级更新 (156)5.49. 机油更换提醒功能 (157)5.50. 差值测量 (157)5.50.1. 差值测量 (157)6. 保护6.1. 概述 (159)6.1.1. 概述 (159)6.2. 依据电压（抑制）决定过电流 (160)7. PID控制器7.1. PID控制器的描述 (162)7.2. 控制器 (162)7.3. 原理图 (163)7.4. 比例调节器 (163)7.4.1. 速率范围 (164)7.4.2. 动态调整区 (164)7.4.3. 积分调节器 (165)7.4.4. 微分调节器 (166)7.5. 负载分配控制器 (167)7.6. 同步控制器 (167)7.7. 继电器控制 (168)7.7.1. 继电器调整 (168)7.7.2. 信号长度 (169)7.8. 下垂模式 (170)7.8.1. 原理和设定 (170)7.8.2. 电压下垂举例 (171)7.8.3. 高下垂设置 (171)7.8.4. 低下垂设置 (171)7.8.5. 无差调速器补偿 (172)8. 同步8.1. 同步原理 (173)8.2. 动态同步 (173)8.2.1. 合闸信号 (174)8.2.2. 同步后的负载情况 (174)8.2.3. 调整 (175)8.3. 静态同步 (176)8.3.1. 相位控制器 (176)8.3.2. 合闸信号 (176)8.3.3. 同步后的负载情况 (177)8.3.4. 调整 (177)8.4. 励磁前GB合闸 (178)8.4.1. 流程图1，GB处理 (180)8.4.2. 流程图2，TB控制（选项G5） (181)8.4.3. 机组起动动作 (182)8.4.4. 开关控制时序 (182)8.4.5. “励磁前合闸”故障 (183)8.5. 单独同步继电器 (183)8.6. 同步MB前的抑制条件 (184)9. 参数清单9.1. 相关的参数 (186)1. 概述1.1 警告、法律信息和安全须知1.1.1 警告和注意此文档将会出现许多有助于用户使用的警告和注意符号。

IRG4BC30KD-STRR;中文规格书,Datasheet资料

ParameterTyp.Max.UnitsR θJC Junction-to-Case - IGBT ––– 1.2R θJC Junction-to-Case - Diode2.5R θCS Case-to-Sink, Flat, Greased Surface0.5–––°C/W R θJA Junction-to-Ambient ( PCB Mounted,steady-state)U –––40WtWeight1.44–––gParameterMax.UnitsV CESCollector-to-Emitter Voltage 600VI C @ T C = 25°C Continuous Collector Current 28I C @ T C = 100°C Continuous Collector Current 16I CM Pulsed Collector Current Q58AI LMClamped Inductive Load Current R 58I F @ T C = 100°C Diode Continuous Forward Current 12I FM Diode Maximum Forward Current 58t sc Short Circuit Withstand Time 10µs V GEGate-to-Emitter Voltage± 20V P D @ T C = 25°C Maximum Power Dissipation 100P D @ T C = 100°C Maximum Power Dissipation 42T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw.10 lbf•in (1.1 N•m)IRG4BC30KD-SINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEFeaturesV CES = 600VV CE(on) typ. = 2.21V@V GE = 15V, I C = 16AShort Circuit RatedUltraFast IGBT4/24/2000• High short circuit rating optimized for motor control, t sc =10µs, @360V V CE (start), T J = 125°C, V GE = 15V• Combines low conduction losses with high switching speed• tighter parameter distribution and higher efficiency than previous generations• IGBT co-packaged with HEXFRED TM ultrafast, ultrasoft recovery antiparallel diodesBenefits• Latest generation 4 IGBTs offer highest power density motor controls possible• HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristic reduce noise, EMI and switching losses • This part replaces the IRGBC30KD2-S and IRGBC30MD2-S products• For hints see design tip 97003PD -91594CAbsolute Maximum RatingsW2D P a kThermal Resistance 1IRG4BC30KD-SParameter Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on)—67100I C = 16A Q ge Gate - Emitter Charge (turn-on)—1116nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on)—2537V GE = 15V t d(on)Turn-On Delay Time —60—t r Rise Time —42—T J = 25°Ct d(off)Turn-Off Delay Time —160250I C = 16A, V CC = 480V t f Fall Time —80120V GE = 15V, R G = 23ΩE on Turn-On Switching Loss —0.60—Energy losses include "tail"E off Turn-Off Switching Loss —0.58—mJ and diode reverse recovery E ts Total Switching Loss — 1.18 1.6See Fig. 9,10,14t sc Short Circuit Withstand Time 10——µs V CC = 360V, T J = 125°CV GE = 15V, R G = 10Ω , V CPK < 500Vt d(on)Turn-On Delay Time —58—T J = 150°C,See Fig. 11,14t rRise Time—42—I C = 16A, V CC = 480Vt d(off)Turn-Off Delay Time —210—V GE = 15V, R G = 23Ωt f Fall Time—160—Energy losses include "tail"E ts Total Switching Loss— 1.69—mJ and diode reverse recovery L E Internal Emitter Inductance —7.5—nH Measured 5mm from package C ies Input Capacitance —920—V GE = 0V C oes Output Capacitance—110—pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance —27—ƒ = 1.0MHz t rr Diode Reverse Recovery Time —4260T J = 25°C See Fig.—80120T J = 125°C 14 I F = 12A I rr Diode Peak Reverse Recovery Current — 3.5 6.0T J = 25°C See Fig.— 5.610T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge —80180T J = 25°C See Fig.—220600T J = 125°C 16 di/dt = 200Aµs di (rec)M /dtDiode Peak Rate of Fall of Recovery —180—T J = 25°C See Fig.During t b—160—T J = 125°C 17Parameter Min.Typ.Max.Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage S 600——V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage —0.54—V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage — 2.21 2.7I C = 16A V GE = 15V— 2.88—I C = 28ASee Fig. 2, 5— 2.36—I C = 16A, T J = 150°CV GE(th)Gate Threshold Voltage 3.0— 6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage —-12—mV/°C V CE = V GE , I C = 250µAg feForward Transconductance T 5.48.1—S V CE = 100V, I C = 16A I CES Zero Gate Voltage Collector Current ——250V GE = 0V, V CE = 600V——2500V GE = 0V, V CE = 600V, T J = 150°CV FM Diode Forward Voltage Drop — 1.4 1.7I C = 12A See Fig. 13— 1.3 1.6I C = 12A, T J = 150°CI GES Gate-to-Emitter Leakage Current ——±100nA V GE = ±20VSwitching Characteristics @ T J = 25°C (unless otherwise specified)Electrical Characteristics @ T J = 25°C (unless otherwise specified)nsnsVµAV nCA/µsAnsIRG4BC30KD-S 3Fig. 1 - Typical Load Current vs. Frequency(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4BC30KD-SFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4BC30KD-S 5Resistance Junction TemperatureFig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageFig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward CurrentCollector-to-Emitter Current1101000.40.81.21.62.02.4FMF I n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A )Fo rwa rd Voltage Drop - V (V)IRG4BC30KD-S 7Fig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt2004006001001000fdi /dt - (A/µs)R R Q - (n C )101001000100001001000f d i /d t - (A /µs)d i (re c )M /d t- (A /µs )40801201601001000fdi /dt - (A/µs)t - (n s )rr 1101001001000fdi /dt - (A/µs)I - (A )I R R MIRG4BC30KD-SFig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrts on offE = (E +E )IRG4BC30KD-S 9Vg G ATE SIG N ALD EVICE UN DER TESTC UR R EN T D.U.T.VO LTAG E IN D.U.T.C UR R EN T IND 1t2Figure 19. Clamped Inductive Load Test CircuitFigure 20. Pulsed Collector CurrentTest Circuit=480V4 X I C@25°CFigure 18e. Macro Waveforms for Figure 18a's Test CircuitTape & Reel InformationD 2PakIRG4BC30KD-SNotes:Q Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20)R V CC =80%(V CES ), V GE =20V, L=10µH, R G = 23Ω (figure 19)S Pulse width ≤ 80µs; duty factor ≤ 0.1%.T Pulse width 5.0µs, single shot.U When mounted on 1" square PCB (FR-4 or G-10 Material ).For recommended footprint and soldering techniques refer to application note #AN-994.10.16 (.400) R E F.6.47 (.255)6.18 (.243)2.61 (.103)2.32 (.091)8.89 (.350) R E F.- B -1.32 (.052)1.22 (.048)2.79 (.110)2.29 (.090)1.39 (.055)1.14 (.045)5.28 (.208)4.78 (.188)4.69 (.185)4.20 (.165)10.54 (.415)10.29 (.405)- A -21 315.49 (.610)14.73 (.580)3X0.93 (.037)0.69 (.027)5.08 (.200)3X1.40 (.055)1.14 (.045)1.78 (.070)1.27 (.050)1.40 (.055) M A X.N O T E S :1 D IM E N S IO N S A F TE R S O LD E R D IP.2 D IM E N S IO N IN G &TO L E R A N C IN G P E R A N S I Y 14.5M , 1982.3 C O N T R O L LIN G D IM E N S IO N : IN C H.4 H E A TS IN K &L E A D D IM E N S IO N S D O N O T IN C LU D E B U R R S.0.55 (.022)0.46 (.018)0.25 (.010) M B A MM IN IM U M R E C O M M E N D E D F O O T P R IN T11.43 (.450)8.89 (.350)17.78 (.700)3.81 (.150)2.08 (.082) 2XLE A D A S S IG N M E N TS 1 - G A T E 2 - D R A IN 3 - S O U R C E2.54 (.100) 2XD 2Pak Package OutlineIR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936Data and specifications subject to change without notice. 10/00分销商库存信息: IRIRG4BC30KD-STRR。

吉佛兰电子设备产品介绍说明书

AUTOMATIONPOWER CONTROLSOLID STATE RELAYS, AND POWER CONTROLLERSENG C O D . 81141D - 03/20152Thanks to forty years of experience, Gefran is the world leader in the design and production of solutions for measuring, controlling, and driving industrial production processes .We have 14 branches in 12 countries and a network of over 80 worldwide distributors.For 40 years, Gefran has been designing and producing technologically advanced actuators and solid state relays to control resistive/inductive loads and infrared lamps used in modern temperature control systems.Our knowledge of the market transforms your needs into practical, high-quality answers.QUALITY AND TECHNOLOGYGefran components are a concentrate of technology , the result of constant research and of cooperation with major research centres .Thanks to its complete line of controllers and actuators , Gefran can be your sole provider of solutions for electrical heating control .Gefran’s know-how and experience guarantee continuous and practical solutions.SERVICESA team of Gefran experts works with the customer to select the ideal product for its application and to help install andconfiguredevices(***********************).Gefran offers a wide range of courses at different levels for the technical-commercial study of the Gefran product range as well as specific courses on demandIn addition to foreseeing the market’s application needs, Gefran forms partnerships with its customers to find the best way to optimise and boost the performance of various applications .Gefran products communicate with one another to provide integrated solutions, and can dialogue with devices by other companies thanks to compatibility with numerous fieldbuses.APPLICATIONSPLASTICS HEAT TREATMENTGLASSENERGYPAPERFOODSOFTWAREGF_eXpressConfiguration kit for Gefran instruments by means of PC (Windows environment).- A single software for all models- Easy configuration- Copy/paste, save recipe, trendfunctions- Rapid configuration of instruments- Saving and management of parameterrecipes- On-line trend and saving of historicaldata- Recovery of factory settings- Custom linearization- On-line user manual- Easy programming with custom messages- Easy graphics programming with setpointprogrammersIR SOLUTIONPRINTINGTEXTILEPLASTICS – BLOWINGWOODWORKING MACHINESPHOTOVOLTAICSAUTOMOTIVE Halogen - 2500°CShort Wave - 2200°C4SOLID STATE RELAYS, AND POWER CONTROLLERSGTF - GFWGTF and GTF-XTRAGTF is the new line of GEFRAN power controllers, designedto control all types of industrial electric heaters.Versatility, plus easy and guided configuration with GEFRAN(25,40A)(400, 600A)(400, 600A)GS (15... 120A)GD (40A)SOLID STATE RELAYS, AND POWER CONTROLLERSFIELDBUS*(25...60A)GTF(25...250A)GFWFIELDBUS*GFX4-IRFIELDBUS* (25... 120A)GT(25... 120A)(*) European Patent N° 2660843 8SOLID STATE RELAYS, AND POWER CONTROLLERS(*) European Patent N° 2660843 10SOLID STATE RELAYS, AND POWER CONTROLLERSnot availablex = (1pcs)SOLID STATE RELAYS, AND POWER CONTROLLERS(**) Valid formulas for Vline=Vload(***) For these applications it is recommanded to contact the Gefran specialistsnon disponibilex = (1pz)SOLID STATE RELAYS, AND POWER CONTROLLERS(**) Valid formulas for Vline=Vload(***) For these applications it is recommanded to contact the Gefran specialistsSPAINMEXICO TAIWAN INDIARUSSIABELGIUM UK TURKEYSINGAPOREGERMANYCHINA SWITZERLAND FRANCE USA BRAZILSOUTH AFRICAITALYDrive & Motion Control Unit Via Carducci, 2421040 GERENZANO (VA) ITALY Ph. +39 02967601Fax +39 029682653**********************Technical Assistance:*********************Customer Service*************************Ph. +39 02 96760500 Fax +39 02 96760278GEFRAN HEADQUARTER Via Sebina, 7425050 PROVAGLIO D’ISEO (BS) ITALY Ph. +39 03098881Fax +39 0309839063GEFRAN DEUTSCHLAND GmbH Philipp-Reis-Straße 9a D-63500 Seligenstadt Ph. +49 (0) 61828090Fax +49 (0) 6182809222******************SIEI AREG - GERMANY Gottlieb-Daimler Strasse 17/3D-74385 - Pleidelsheim Ph. +49 (0) 7144 897360Fax +49 (0) 7144 8973697****************SENSORMATE AGSteigweg 8,CH-8355 Aadorf, Switzerland Ph. +41(0)52-2421818 Fax +41(0)52-3661884http://www.sensormate.ch GEFRAN FRANCE SA4, rue Jean Desparmet - BP 823769355 LYON Cedex 08Ph. +33 (0) 478770300Fax +33 (0) 478770320********************GEFRAN BENELUX NV ENA 23 Zone 3, nr . 3910 Lammerdries-Zuid 14A B-2250 OLENPh. +32 (0) 14248181Fax +32 (0) 14248180**************GEFRAN UK Ltd Unit 7Brook Business Centre 54a Cowley Mill Road Uxbridge UB8 2FXPh. +44 (0) 8452 604555Fax +44 (0) 8452 604556 ***************.ukGEFRAN ESPAÑACalle Vic, números 109-11108160 - MONTMELÓ(BARCELONA)Ph. +34 934982643Fax +34 935721571**************************GEFRAN MIDDLE EAST ELEKTRIK VE ELEKTRONIK San. ve Tic. Ltd. Sti Yesilkoy Mah. AtaturkCad. No: 12/1 B1 Blok K:12 D: 389 Bakirkoy /Istanbul TURKIYEPh. +90212 465 91 21Fax +90212 465 91 22GEFRAN RUSSIA4 Lesnoy pereulok, 4B usiness center “White Stone” 125047, Moscow, Russia Tell: +7 (495) 225-86-20 Fax: +7 (495) 225-85-00GEFRAN SOUTH AFRICA Pty Ltd.Unit 10 North Precinet, West Bu-ildingTopaz Boulevard Montague Park, 7411, Cape Town Ph. +27 21 5525985 Fax +27 21 5525912GEFRAN SIEIDrives Technology Co., Ltd No. 1285, Beihe Road, Jiading District, Shanghai, China 201807Ph. +86 21 69169898Fax +86 21 69169333***************.cnGEFRAN INDIASurvey No: 182/1 KH, Bhukum, Paud road, Taluka – Mulshi,Pune - 411 042. MH, INDIA Phone No.:+91-20-39394400Fax No.: +91-20-39394401**********************GEFRAN TAIWANNo.141, Wenzhi Rd., Zhongli City, Taoyuan County 32054, Taiwan (R.O.C.)Ph. +886-3-4273697*********************.sg GEFRAN Inc.8 Lowell AvenueWINCHESTER - MA 01890Toll Free 1-888-888-4474Fax +1 (781) 7291468******************GEFRAN BRASILELETROELETRÔNICA Avenida Dr . Altino Arantes,377 Vila Clementino04042-032 SÂO PAULO - SP Ph. +55 (0) 1155851133Fax +55 (0) 1132974012********************.br。

g4bc30kd场效应管参数

场效应管是一种常见的半导体器件，广泛应用于电子电路中的放大、开关、调节等功能。

场效应管的性能参数对电路的稳定性和性能影响巨大，因此对场效应管参数的深入了解是非常重要的。

本文将就场效应管参数展开详细介绍。

一、场效应管的基本结构场效应管是一种特殊的晶体管，它具有三个电极：栅极、漏极和源极。

栅极是控制电流的电极，漏极是输出电流的电极，源极是输入电流的电极。

场效应管的工作原理是通过控制栅极电压来改变漏极和源极之间的电流，从而实现放大、开关和调节等功能。

二、场效应管的参数1. 饱和漏极电流（IDSS）饱和漏极电流是场效应管在栅极与漏极之间的最大电压下所能通过的最大漏极电流。

它是衡量场效应管输出能力的重要参数，代表了场效应管的最大输出电流。

2. 压控漏极电阻（rds(on)）压控漏极电阻是场效应管在导通状态时，栅极与漏极之间的电阻。

它决定了场效应管导通时的电压降，也是衡量场效应管导通能力的重要参数。

一般情况下，压控漏极电阻越小，导通能力越强。

3. 漏极-源极饱和电压（VGS(TH)）漏极-源极饱和电压是场效应管导通时，栅极与漏极之间的电压。

它是触发场效应管导通的临界电压，也是衡量场效应管导通特性的重要参数。

漏极-源极饱和电压越小，场效应管的导通特性越好。

4. 最大耗散功率（PD）最大耗散功率是场效应管能够散热的最大功率。

它取决于场效应管的结构和材料，也是场效应管稳定性和可靠性的重要指标。

在实际应用中，需要根据最大耗散功率选择合适的散热器，以确保场效应管的安全工作。

5. 开启时间（turn-on time）和关闭时间（turn-off time）开启时间和关闭时间分别表示场效应管从关断到导通和从导通到关断所需的时间。

它们直接影响了场效应管的开关速度，也是衡量场效应管开关特性的重要参数。

三、场效应管参数的测试方法1. IDSS的测试方法IDSS的测试方法通常是在栅极和源极之间加零电压，然后测量漏极和源极之间的电流。

FPGA可编程逻辑器件芯片EP4CE30F23C6中文规格书

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SWU_CURn
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ADSP-BF60x SWU Interrupt List
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SYSTEM WATCHPOINT UNIT (SWU) SWU FUNCTIONAL DESCRIPTION
SWU Flow Diagram
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常用全系列场效应管

常用全系列‎场效应管‎M OS管型‎号参数封装‎资料‎场效应管分‎类型‎号‎简介‎‎封装DI‎S CRET‎EMOS‎FET ‎‎2N700‎0 6‎0V,0.‎115A ‎TO-9‎2DI‎S CRET‎EMOS‎FET ‎‎2N700‎2 6‎0V,0.‎2A ‎SOT-‎23D‎I SCRE‎T EMO‎S FET‎‎I RF51‎0A ‎100V,‎5.6A ‎ TO-‎220‎D ISCR‎E TEM‎O S FE‎T‎IRF5‎20A ‎100V‎,9.2A‎ TO‎-220‎DISC‎R ETE‎M OS F‎E T ‎ IRF‎530A ‎ 10‎0V,14‎A T‎O-220‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F540A‎ 1‎00V,2‎8A ‎T O-22‎0DI‎S CRET‎EMOS‎FET ‎ I‎R F610‎A‎200V,‎3.3A ‎TO-2‎20D‎I SCRE‎T EMO‎S FET‎‎I RF62‎0A ‎200V‎,5A ‎ TO-‎220‎D ISCR‎E TEM‎O S FE‎T‎IRF6‎30A ‎ 200‎V,9A ‎ TO‎-220‎DISC‎R ETE‎M OS F‎E T ‎ IRF‎634A ‎ 25‎0V,8.‎1A T‎O-220‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F640A‎ 2‎00V,1‎8A ‎T O-22‎0DI‎S CRET‎EMOS‎FET ‎ I‎R F644‎A‎250V,‎14A ‎TO-2‎20D‎I SCRE‎T EMO‎S FET‎‎I RF65‎0A ‎200V‎,28A ‎ TO-‎220‎D ISCR‎E TEM‎O S FE‎T‎IRF6‎54A ‎ 250‎V,21A‎ TO‎-220‎DISC‎R ETE‎M OS F‎E T ‎ IRF‎720A ‎ 40‎0V,3.‎3A T‎O-220‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F730A‎ 4‎00V,5‎.5A ‎T O-22‎0 DI‎S CRET‎EMOS‎FET ‎ I‎R F740‎A‎400V,‎10A ‎TO-2‎20 D‎I SCRE‎T EMO‎S FET‎‎I RF75‎0A ‎400V‎,15A ‎ TO-‎220 ‎D ISCR‎E TEM‎O S FE‎T‎IRF8‎20A ‎ 500‎V,2.5‎A TO‎-220 ‎DISC‎R ETE‎M OS F‎E T ‎ IRF‎830A ‎ 50‎0V,4.‎5A T‎O-220‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F840A‎ 5‎00V,8‎A‎T O-22‎0 DI‎S CRET‎EMOS‎FET ‎ I‎R F952‎0‎‎‎TO-2‎20D‎I SCRE‎T EMO‎S FET‎‎I RF95‎40 ‎‎‎ TO-‎220‎D ISCR‎E TEM‎O S FE‎T‎IRF9‎610 ‎‎‎ TO‎-220‎DISC‎R ETE‎M OS F‎E T ‎ IRF‎9620 ‎‎‎ T‎O-220‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F P150‎A 1‎00V,4‎3A ‎T O-3P‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F P250‎A 2‎00V,3‎2A ‎T O-3P‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F P450‎A 5‎00V,1‎4A ‎T O-3P‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F R024‎A 6‎0V,15‎A‎D-PAK‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F R120‎A 1‎00V,8‎.4A ‎D-PAK‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F R214‎A 2‎50V,2‎.2A ‎D-PAK‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F R220‎A 2‎00V,4‎.6A ‎D-PAK‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F R224‎A 2‎50V,3‎.8A ‎D-PAK‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F R310‎A 4‎00V,1‎.7A ‎D-PAK‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F R902‎0TF ‎‎‎D-PAK‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F S540‎A 1‎00V,1‎7A ‎T O-22‎0F D‎I SCRE‎T EMO‎S FET‎‎I RFS6‎30A ‎200V‎,6.5A‎ TO-‎220F ‎DISC‎R ETE‎M OS F‎E T ‎ IRF‎S634A‎ 25‎0V,5.‎8A T‎O-220‎F DI‎S CRET‎EMOS‎FET ‎ I‎R FS64‎0A ‎200V,‎9.8A ‎TO-2‎20F ‎D ISCR‎E TEM‎O S FE‎T‎IRFS‎644A ‎ 250‎V,7.9‎A TO‎-220F‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F S730‎A 4‎00V,3‎.9A ‎T O-22‎0F D‎I SCRE‎T EMO‎S FET‎‎I RFS7‎40A ‎400V‎,5.7A‎ TO-‎220F ‎DISC‎R ETE‎M OS F‎E T ‎ IRF‎S830A‎ 50‎0V,3.‎1A T‎O-220‎F DI‎S CRET‎EMOS‎FET ‎ I‎R FS84‎0A ‎500V,‎4.6A ‎TO-2‎20F ‎D ISCR‎E TEM‎O S FE‎T‎IRFS‎9Z34 ‎ -60‎V,12A‎ TO‎-220F‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F SZ24‎A 6‎0V,14‎A‎T O-22‎0FD‎I SCRE‎T EMO‎S FET‎‎I RFSZ‎34A ‎60V,‎20A ‎ TO-‎220F‎DISC‎R ETE‎M OS F‎E T ‎ IRF‎U110A‎ 10‎0V,4.‎7A I‎-PAK‎DISC‎R ETE‎M OS F‎E T ‎ IRF‎U120A‎ 10‎0V,8.‎4A I‎-PAK‎DISC‎R ETE‎M OS F‎E T ‎ IRF‎U220A‎ 20‎0V,4.‎6A I‎-PAK‎DISC‎R ETE‎M OS F‎E T ‎ IRF‎U230A‎ 20‎0V,7.‎5A I‎-PAK‎DISC‎R ETE‎M OS F‎E T ‎ IRF‎U410A‎ 50‎0V ‎‎I-PAK‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F U420‎A 5‎00V,2‎.3A ‎I-PA‎KDI‎S CRET‎EMOS‎FET ‎ I‎R FZ20‎A‎‎‎ TO-‎220‎D ISCR‎E TEM‎O S FE‎T‎IRFZ‎24A ‎ 60‎V,17A‎ T‎O-220‎DIS‎C RETE‎MOS ‎F ET ‎ IR‎F Z30 ‎‎‎‎TO-2‎20D‎I SCRE‎T EMO‎S FET‎‎I RFZ3‎4A ‎ 60V‎,30A ‎ TO‎-220‎DISC‎R ETE‎M OS F‎E T ‎ IRF‎Z40 ‎‎‎‎T O-22‎0DI‎S CRET‎EMOS‎FET ‎ I‎R FZ44‎A‎60V,‎50A ‎ TO-‎220‎D ISCR‎E TEM‎O S FE‎T‎IRLS‎530A ‎ 100‎V,10.‎7A,Lo‎g ic ‎T O-22‎0F D‎I SCRE‎T EMO‎S FET‎‎I RLSZ‎14A ‎60V,‎8A,Lo‎g ic ‎TO-2‎20F ‎D ISCR‎E TEM‎O S FE‎T‎IRLZ‎24A ‎ 60V‎,17A,‎L ogic‎ TO-‎220 ‎D ISCR‎E TEM‎O S FE‎T‎IRLZ‎44A ‎ 60V‎,50A,‎L ogic‎ TO-‎220 ‎D ISCR‎E TEM‎O S FE‎T‎SFP3‎6N03 ‎ 30V‎,36A ‎ TO‎-220‎DISC‎R ETE‎M OS F‎E T ‎ SFP‎65N06‎ 60‎V,65A‎ T‎O-220‎DIS‎C RETE‎MOS ‎F ET ‎ SF‎P9540‎ -‎100V,‎17A ‎T O-22‎0DI‎S CRET‎EMOS‎FET ‎ S‎F P963‎4‎-250V‎,5A ‎TO-2‎20D‎I SCRE‎T EMO‎S FET‎‎S FP96‎44 ‎-250‎V,8.6‎A TO-‎220‎D ISCR‎E TEM‎O S FE‎T‎SFP9‎Z34 ‎ -60‎V,18A‎ TO‎-220‎DISC‎R ETE‎M OS F‎E T ‎ SFR‎9214 ‎ -25‎0V,1.‎53A ‎D-PAK‎DIS‎C RETE‎MOS ‎F ET ‎ SF‎R9224‎ -2‎50V,2‎.5A ‎D-PA‎KDI‎S CRET‎EMOS‎FET ‎ S‎F R931‎0 -‎400V,‎1.5A ‎ D-P‎A KD‎I SCRE‎T EMO‎S FET‎‎S FS96‎30 ‎-200V‎,4.4A‎ TO‎-220F‎DIS‎C RETE‎MOS ‎F ET ‎ SF‎S9634‎ -2‎50V,3‎.4A ‎TO-2‎20F‎D ISCR‎E TEM‎O S FE‎T‎SFU9‎220 ‎-200‎V,3.1‎A I‎-PAK‎DISC‎R ETE‎M OS F‎E T ‎ SSD‎2002 ‎25V ‎N/P D‎u al ‎8SOP‎DIS‎C RETE‎MOS ‎F ET ‎ SS‎D2019‎ 20V‎P-ch‎Dual‎ 8SO‎P DI‎S CRET‎EMOS‎FET ‎ S‎S D210‎1 30‎V N-c‎h Sin‎g le ‎8SOP ‎DISC‎R ETE‎M OS F‎E T ‎ SSH‎10N80‎A 80‎0V,10‎A T‎O-3P ‎DISC‎R ETE‎M OS F‎E T ‎ SSH‎10N90‎A 90‎0V,10‎A T‎O-3P ‎DISC‎R ETE‎M OS F‎E T ‎ SSH‎5N90A‎ 90‎0V,5A‎ T‎O-3P ‎DISC‎R ETE‎M OS F‎E T ‎ SSH‎60N10‎‎‎ T‎O-3P‎DISC‎R ETE‎M OS F‎E T ‎ SSH‎6N80A‎ 80‎0V,6A‎ T‎O-3P ‎DISC‎R ETE‎M OS F‎E T ‎ SSH‎70N10‎A 10‎0V,70‎A T‎O-3P ‎DISC‎R ETE‎M OS F‎E T ‎ SSH‎7N90A‎ 90‎0V,7A‎ T‎O-3P ‎DISC‎R ETE‎M OS F‎E T ‎ SSH‎9N80A‎ 80‎0V,9A‎ T‎O-3P ‎DISC‎R ETE‎M OS F‎E T ‎ SSP‎10N60‎A 60‎0V,9A‎ T‎O-220‎DIS‎C RETE‎MOS ‎F ET ‎ SS‎P1N60‎A 6‎00V,1‎A‎T O-22‎0 DI‎S CRET‎EMOS‎FET ‎ S‎S P2N9‎0A ‎900V,‎2A ‎TO-2‎20 D‎I SCRE‎T EMO‎S FET‎‎S SP35‎N03 ‎30V,‎35A ‎ TO-‎220 ‎D ISCR‎E TEM‎O S FE‎T‎SSP3‎N90A ‎ 900‎V,3A ‎ TO‎-220 ‎DISC‎R ETE‎M OS F‎E T ‎ SSP‎4N60A‎ 60‎0V,4A‎ T‎O-220‎DIS‎C RETE‎MOS ‎F ET ‎ SS‎P4N60‎A S 6‎00V,4‎A‎T O-22‎0 DI‎S CRET‎EMOS‎FET ‎ S‎S P4N9‎0AS ‎900V,‎4.5A ‎ TO-‎220 ‎D ISCR‎E TEM‎O S FE‎T‎SSP5‎N90A ‎ 900‎V,5A ‎ TO-‎220‎D ISCR‎E TEM‎O S FE‎T‎SSP6‎0N06 ‎ 60V‎,60A ‎ TO-‎220‎D ISCR‎E TEM‎O S FE‎T‎SSP6‎N60A ‎ 600‎V,6A ‎ TO-‎220‎D ISCR‎E TEM‎O S FE‎T‎SSP7‎0N10A‎ 100‎V,55A‎ TO-‎220 ‎D ISCR‎E TEM‎O S FE‎T‎SSP7‎N60A ‎ 600‎V,7A ‎ TO-‎220‎D ISCR‎E TEM‎O S FE‎T‎SSP7‎N80A ‎ 800‎V,7A ‎ TO-‎220‎D ISCR‎E TEM‎O S FE‎T‎SSP8‎0N06A‎ 60V‎,80A ‎ TO-‎220 ‎D ISCR‎E TEM‎O S FE‎T‎SSR1‎N60A ‎ 600‎V,0.9‎A D-‎P AK ‎D ISCR‎E TEM‎O S FE‎T‎SSR2‎N60A ‎ 600‎V,1.8‎A D-‎P AK ‎D ISCR‎E TEM‎O S FE‎T‎SSR3‎055A ‎ 60V‎,8A ‎ D-‎P AK‎D ISCR‎E TEM‎O S FE‎T‎SSS1‎0N60A‎ 600‎V,5.1‎A TO‎-220F‎DIS‎C RETE‎MOS ‎F ET ‎ SS‎S2N60‎A 6‎00V,1‎.3A ‎T O-22‎0F D‎I SCRE‎T EMO‎S FET‎‎S SS3N‎80A ‎800V‎,2A ‎ TO-‎220F‎DISC‎R ETE‎M OS F‎E T ‎ SSS‎3N90A‎ 90‎0V,2A‎ TO‎-220F‎DIS‎C RETE‎MOS ‎F ET ‎ SS‎S4N60‎A 6‎00V,3‎.5A ‎T O-22‎0(F/P‎) DI‎S CRET‎EMOS‎FET ‎ S‎S S4N6‎0AS ‎600V,‎2.3A ‎TO-2‎20(F/‎P) D‎I SCRE‎T EMO‎S FET‎‎S SS4N‎60AS ‎600V‎,2.3A‎ TO-‎220F‎DISC‎R ETE‎M OS F‎E T ‎ SSS‎4N90A‎S 90‎0V,2.‎8A T‎O-220‎FDI‎S CRET‎EMOS‎FET ‎ S‎S S5N8‎0A ‎800V,‎3A ‎TO-2‎20F‎D ISCR‎E TEM‎O S FE‎T‎SSS6‎N60A ‎ 600‎V, ‎ TO‎-220(‎F/P)‎常用贴‎片三极管查‎询贴片‎三极管型号‎查询直插‎封装的型号‎贴片的型‎号901‎1 1T‎9012 ‎2T90‎13 J3‎9014‎J69‎015 M‎6901‎6 Y6‎9018 ‎J8S8‎050 J‎3YS8‎550 2‎T Y80‎50 Y1‎8550‎Y22‎S A101‎5 BA‎2SC18‎15 HF‎2SC9‎45 CR‎MMBT‎3904 ‎1AMM‎M BT39‎06 2A‎MMBT‎2222 ‎1PMM‎B T540‎1 2L‎M MBT5‎551 G‎1MMB‎T A42 ‎1DMM‎B TA92‎2DB‎C807-‎16 5A‎BC80‎7-25 ‎5BBC‎807-4‎0 5C‎B C817‎-16 6‎ABC8‎17-25‎6BB‎C817-‎40 6C‎BC84‎6A 1A‎BC84‎6B 1B‎BC84‎7A 1E‎BC84‎7B 1F‎BC84‎7C 1G‎BC84‎8A 1J‎BC84‎8B 1K‎BC84‎8C 1L‎BC85‎6A 3A‎BC85‎6B 3B‎BC85‎7A 3E‎BC85‎7B 3F‎BC85‎8A 3J‎BC85‎8B 3K‎BC85‎8C 3L‎2SA7‎33 CS‎UN21‎11 V1‎UN21‎12 V2‎UN21‎13 V3‎UN22‎11 V4‎UN22‎12 V5‎UN22‎13 V6‎2SC3‎356 R‎232S‎C3838‎AD2‎N7002‎702‎回答人的‎补充‎2010-‎02-01‎17:3‎1 Ste‎m pel ‎Typ‎Hers‎t.B‎a se‎G eh?u‎s eS‎t anda‎r d Ve‎r glei‎c hsty‎pJ‎0HS‎M S-28‎40H‎PC‎SOT2‎3sc‎h ottk‎y dio‎d e‎J01‎S O290‎6R‎N‎2N29‎06‎J03‎S 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g4bc30kd场效应管参数 -回复

g4bc30kd场效应管参数-回复G4BC30KD场效应管参数场效应管，也称为晶体管，是一种用于放大和开关电路的半导体器件。

它具有很多不同的参数，其中之一是G4BC30KD场效应管参数。

本文将逐步回答关于此参数的问题。

第一步，让我们先了解G4BC30KD场效应管的基本概念和结构。

G4BC30KD场效应管是一种N沟道MOS场效应管。

它由三个主要区域组成：栅极（G），漏极（D）和源极（S）。

栅极与源极之间的电压控制了漏极到源极的电流流动。

它是一种增强型场效应管，意味着当栅极电压为零时，通道是关闭的，而当栅极电压为正时，通道打开。

现在，让我们开始讨论G4BC30KD场效应管的参数。

首先，我们来看看G4BC30KD的最大漏极电流（IDmax）。

这是指在给定的工作条件下，允许通过场效应管的最大电流。

超过这个电流，场效应管可能会损坏。

其次，我们有漏-源极电压（VDSmax）。

这是指允许在给定工作条件下加在漏极和源极之间的最大电压。

超过这个电压，场效应管也可能会损坏。

接下来，我们来看看G4BC30KD的栅极-源极电压（VGS）。

这是指应用在栅极和源极之间的电压。

当VGS为零时，场效应管处于关闭状态；而当VGS为正时，场效应管处于开启状态。

此外，我们还有栅极-源极截止电压（VGSoff）。

这是指在给定的工作条件下，场效应管刚刚关闭时的栅极-源极电压。

当VGS小于VGSoff时，场效应管完全关闭。

另一个重要的参数是漏导电阻（RDSon），它表示在给定的工作条件下，当场效应管处于完全开启状态时，漏极和源极之间的电阻。

这个参数影响了场效应管的导通能力和功耗。

此外，我们还有栅极输入电容（Ciss），它是指在给定的工作条件下，栅极与源极之间的电容。

这个参数对于交流信号的耦合和放大至关重要。

最后，对于G4BC30KD场效应管来说，建议的工作温度范围也是一个重要的参数。

该参数指示了场效应管在什么温度范围内能够正常工作。

综上所述，G4BC30KD场效应管具有多个重要参数，包括最大漏极电流（IDmax）、漏-源极电压（VDSmax）、栅极-源极电压（VGS）、栅极-源极截止电压（VGSoff）、漏导电阻（RDSon）、栅极输入电容（Ciss）和工作温度范围。

[VIP专享]己二腈MSDS

自燃温度 550
(℃)：
燃烧爆炸危险性
燃烧热(kj/mol： 507
微溶于水、醚，溶于醇。
溶解性：
饱和蒸汽压(kPa)：无资料
相对密度(空气=1)： 3．73
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IRG4BC30KDPBF中文资料

ParameterMax.UnitsV CESCollector-to-Emitter Voltage 600VI C @ T C = 25°C Continuous Collector Current 28I C @ T C = 100°C Continuous Collector Current 16I CM Pulsed Collector Current58AILMClamped Inductive Load Current 58I F @ T C = 100°C Diode Continuous Forward Current 12I FM Diode Maximum Forward Current 58t sc Short Circuit Withstand Time 10µs V GEGate-to-Emitter Voltage± 20V P D @ T C = 25°C Maximum Power Dissipation 100P D @ T C = 100°C Maximum Power Dissipation 42T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw.10 lbf in (1.1 N m)IRG4BC30KDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE V CES = 600VV CE(on) typ. = 2.21V@V GE = 15V, I C = 16AShort Circuit RatedUltraFast IGBT12/23/03PD -94910Parameter Min.Typ.Max.UnitsR θJC Junction-to-Case - IGBT 1.2R θJC Junction-to-Case - Diode2.5°C/WR θCS Case-to-Sink, flat, greased surface0.50 R θJA Junction-to-Ambient, typical socket mount 80WtWeight2 (0.07)g (oz)Thermal ResistanceAbsolute Maximum RatingsW FeaturesHigh short circuit rating optimized for motor control, t sc =10µs, @360V V CE (start), T J = 125°C, V GE = 15VCombines low conduction losses with high switching speedtighter parameter distribution and higher efficiency than previous generationsIGBT co-packaged with HEXFRED TM ultrafast, ultrasoft recovery antiparallel diodes Lead-FreeLatest generation 4 IGBTs offer highest power density motor controls possibleHEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching lossesThis part replaces the IRGBC30KD2 and IRGBC30MD2 productsFor hints see design tip 97003Benefits 1IRG4BC30KDPbFParameter Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on) 67100I C = 16A Q ge Gate - Emitter Charge (turn-on) 1116nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on) 2537V GE = 15V t d(on)Turn-On Delay Time 60 t r Rise Time 42 T J = 25°Ct d(off)Turn-Off Delay Time 160250I C = 16A, V CC = 480V t f Fall Time 80120V GE = 15V, R G = 23ΩE on Turn-On Switching Loss 0.60 Energy losses include "tail"E off Turn-Off Switching Loss 0.58 mJ and diode reverse recovery E ts Total Switching Loss 1.18 1.6See Fig. 9,10,14t sc Short Circuit Withstand Time 10 µs V CC = 360V, T J = 125°CV GE = 15V, R G = 10Ω , V CPK < 500Vt d(on)Turn-On Delay Time 58 T J = 150°C,See Fig. 11,14t rRise Time42 I C = 16A, V CC = 480Vt d(off)Turn-Off Delay Time 210 V GE = 15V, R G = 23Ωt f Fall Time160 Energy losses include "tail"E ts Total Switching Loss1.69 mJ and diode reverse recovery L E Internal Emitter Inductance 7.5 nH Measured 5mm from package C ies Input Capacitance 920 V GE = 0V C oes Output Capacitance110 pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance 27 = 1.0MHz t rr Diode Reverse Recovery Time 4260ns T J = 25°C See Fig. 80120T J = 125°C 14 I F = 12A I rr Diode Peak Reverse Recovery Current 3.5 6.0AT J = 25°C See Fig. 5.610T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge 80180nC T J = 25°C See Fig. 220600T J = 125°C 16 di/dt = 200Aµs di (rec)M /dtDiode Peak Rate of Fall of Recovery 180 A/µs T J = 25°C See Fig.During t b160 T J = 125°C 17Parameter Min.Typ.Max.Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage 0.54 V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage 2.21 2.7I C = 16A V GE = 15V2.88 V I C = 28A See Fig. 2, 5 2.36 I C = 16A, T J = 150°CV GE(th)Gate Threshold Voltage 3.0 6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage -12 mV/°C V CE = V GE , I C = 250µAg feForward Transconductance 5.48.1 S V CE = 100V, I C = 16A I CES Zero Gate Voltage Collector Current 250µAV GE = 0V, V CE = 600V2500V GE = 0V, V CE = 600V, T J = 150°CV FM Diode Forward Voltage Drop 1.4 1.7V I C = 12A See Fig. 131.3 1.6I C = 12A, T J = 150°CI GES Gate-to-Emitter Leakage Current ±100nAV GE = ±20VSwitching Characteristics @ T J = 25°C (unless otherwise specified)Electrical Characteristics @ T J = 25°C (unless otherwise specified)nsnsIRG4BC30KDPbF 3Fig. 1 - Typical Load Current vs. Frequency(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4BC30KDPbFFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4BC30KDPbF 5Resistance Junction TemperatureFig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageFig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current1101000.40.8 1.2 1.6 2.0 2.4FMFI n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A ) Forward Voltage Drop - V (V)IRG4BC30KDPbF 7Fig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt2004006001001000fdi /dt - (A/µs)R R Q - (n C )101001000100001001000fdi /dt - (A/µs)d i (r e c )M /d t - (A /µs)40801201601001000fdi /dt - (A/µs)t - (ns )r r 1101001001000fdi /dt - (A/µs)I - (A )I R RMIRG4BC30KDPbFFig. 18a - Test Circuit for Measurement ofI LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t ft2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrIRG4BC30KDPbF 9Vg GATE SIGNALDEVICE UNDER TESTCURRENT D.U.T.VOLTAGE IN D.U.T.CURRENT IN D1t0t1t2Figure 19. Clamped Inductive Load Test CircuitFigure 20. Pulsed Collector CurrentTest Circuit=480V4 X I C @25°CFigure 18e. Macro Waveforms for Figure 18a's Test CircuitIRG4BC30KDPbFNotes:Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20)V CC =80%(V CES ), V GE =20V, L=10µH, R G = 23Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot.TO-220AB Package OutlineData and specifications subject to change without notice.233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .12/03元器件交易网Note: For the most current drawings please refer to the IR website at:/package/。

测无忧A430

测无忧A430基本参数操作系统：Windows CEGPS：SiRF 4 双核，64通道，刷新时间1秒/1次屏幕：4.3英寸TFT LCD分辨率：480×272像素随机存储器：MDDR内存：内置4GB Flash，支持TF卡扩展，支持SDHC输入方式：支持全屏手写，中文、英文、数字或符号，均可轻松记录USB接口: USB2.0, high-speed电池: 可拆卸式锂电池，1500 mAh/3.7V喇叭：1W、8ohm耳机：3.5mm立体声耳机工作温度：0 ℃～50℃贮存、运输温度：-10 ℃～60℃工作相对湿度：20%～80%贮存、运输相对湿度：20%～80%产品功能测量功能1、测无忧（MGTG）移动GIS数据采集软件、野外制图、航点存储坐标（经纬度，高程，时间日期）、计算长度、面积、角度等各种野外测量数据，具有双坐标一键转换功能，经纬度秒可以显示到小数点后三位，高精准。

2、坐标系统：支持WGS84 、北京54 、西安80和自定义格式转换3、支持航线航迹更改样型和颜色，线条样式支持铁路符号4、定位精度可精确到1-3米，测量界面功能方便明了，操作快捷5、软件处理：数据下载软件全中文界面，支持数据的多种导出格式（MIF DXF SHP EXCEL TXT等）地图功能内置全国交通详图，配各地区地理详图，详细至乡镇村落，可终身升级细化1、地图定制：用户可根据需求自主上传各种通用矢量地图2、自动背光调节，明暗随景，不刺眼，更安全其他功能游戏：多款精彩小游戏音频：支持MP3、AAC、WMA、WA V、OGG等格式视频：支持RM、RMVB、WMV、ASF、A VI、MP4、MPEG4、3GP等格式图片：支持PG、GIF、BMP、PNG、TIF、PCX、TGA、WBMP、WMF、TIFF、ICO等格式电子书：TXT工具：计算器、单位换算、GPS信息浏览。

IRG4BC30KD-SPBF中文资料

ParameterTyp.Max.UnitsR θJC Junction-to-Case - IGBT 1.2R θJC Junction-to-Case - Diode2.5R θCS Case-to-Sink, Flat, Greased Surface0.5 °C/W R θJA Junction-to-Ambient ( PCB Mounted,steady-state) 40WtWeight1.44gParameterMax.UnitsV CESCollector-to-Emitter Voltage 600VI C @ T C = 25°C Continuous Collector Current 28I C @ T C = 100°C Continuous Collector Current 16I CM Pulsed Collector Current58AI LMClamped Inductive Load Current 58I F @ T C = 100°C Diode Continuous Forward Current 12I FM Diode Maximum Forward Current 58t sc Short Circuit Withstand Time 10µs V GEGate-to-Emitter Voltage± 20V P D @ T C = 25°C Maximum Power Dissipation 100P D @ T C = 100°C Maximum Power Dissipation 42T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw.10 lbf in (1.1 N m)IRG4BC30KD-SPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEFeaturesV CES = 600VV CE(on) typ. = 2.21V@V GE = 15V, I C = 16AShort Circuit RatedUltraFast IGBT8/11/04High short circuit rating optimized for motor control,t sc =10µs, @360V V CE (start), T J = 125°C, V GE = 15V Combines low conduction losses with high switching speedtighter parameter distribution and higher efficiency than previous generationsIGBT co-packaged with HEXFRED TM ultrafast, ultrasoft recovery antiparallel diodes Lead-FreeBenefitsLatest generation 4 IGBTs offer highest power density motor controls possibleHEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristic reduce noise, EMI and switching lossesThis part replaces the IRGBC30KD2-S and IRGBC30MD2-S productsFor hints see design tip 97003PD -95674Absolute Maximum RatingsW 2D PakThermal Resistance 1IRG4BC30KD-SPbFParameter Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on) 67100I C = 16A Q ge Gate - Emitter Charge (turn-on) 1116nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on) 2537V GE = 15V t d(on)Turn-On Delay Time 60 t r Rise Time 42 T J = 25°Ct d(off)Turn-Off Delay Time 160250I C = 16A, V CC = 480V t f Fall Time 80120V GE = 15V, R G = 23ΩE on Turn-On Switching Loss 0.60 Energy losses include "tail"E off Turn-Off Switching Loss 0.58 mJ and diode reverse recovery E ts Total Switching Loss 1.18 1.6See Fig. 9,10,14t sc Short Circuit Withstand Time 10 µs V CC = 360V, T J = 125°CV GE = 15V, R G = 10Ω , V CPK < 500Vt d(on)Turn-On Delay Time 58 T J = 150°C,See Fig. 11,14t rRise Time42 I C = 16A, V CC = 480Vt d(off)Turn-Off Delay Time 210 V GE = 15V, R G = 23Ωt f Fall Time160 Energy losses include "tail"E ts Total Switching Loss1.69 mJ and diode reverse recovery L E Internal Emitter Inductance 7.5 nH Measured 5mm from package C ies Input Capacitance 920 V GE = 0V C oes Output Capacitance110 pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance 27 = 1.0MHz t rr Diode Reverse Recovery Time 4260T J = 25°C See Fig. 80120T J = 125°C 14 I F = 12A I rr Diode Peak Reverse Recovery Current 3.5 6.0T J = 25°C See Fig.5.610T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge 80180T J = 25°C See Fig.220600T J = 125°C 16 di/dt = 200Aµs di (rec)M /dtDiode Peak Rate of Fall of Recovery 180 T J = 25°C See Fig.During t b160 T J = 125°C 17Parameter Min.Typ.Max.Units ConditionsV (BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage 0.54 V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage 2.21 2.7I C = 16A V GE = 15V2.88I C = 28ASee Fig. 2, 5 2.36I C = 16A, T J = 150°C V GE(th)Gate Threshold Voltage 3.0 6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage -12 mV/°CV CE = V GE , I C = 250µA g feForward Transconductance 5.48.1 S V CE = 100V, I C = 16A I CES Zero Gate Voltage Collector Current 250V GE = 0V, V CE = 600V2500V GE = 0V, V CE = 600V, T J = 150°C V FM Diode Forward Voltage Drop 1.4 1.7I C = 12A See Fig. 13 1.3 1.6I C = 12A, T J = 150°C I GES Gate-to-Emitter Leakage Current ±100nAV GE = ±20VSwitching Characteristics @ T J = 25°C (unless otherwise specified)Electrical Characteristics @ T J = 25°C (unless otherwise specified)nsnsVµAV nCA/µsAnsIRG4BC30KD-SPbF 3Fig. 1 - Typical Load Current vs. Frequency(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4BC30KD-SPbFFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4BC30KD-SPbF 5Resistance Junction TemperatureFig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageFig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current1101000.40.8 1.2 1.6 2.0 2.4FMFI n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A ) Forward Voltage Drop - V (V)IRG4BC30KD-SPbF 7Fig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt2004006001001000fdi /dt - (A/µs)R R Q - (n C )101001000100001001000fdi /dt - (A/µs)d i (r e c )M /d t - (A /µs)40801201601001000fdi /dt - (A/µs)t - (ns )r r 1101001001000fdi /dt - (A/µs)I - (A )I R RMIRG4BC30KD-SPbFFig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrts on o ffE = (E +E )IRG4BC30KD-SPbFNotes:Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20) V CC =80%(V CES ), V GE =20V, L=10µH, R G = 23Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot.When mounted on 1" square PCB (FR-4 or G-10 Material ).For recommended footprint and soldering techniques refer to application note #AN-994.344TRRFEED DIRECTION1.85 (.073)1.65 (.065)1.60 (.063)1.50 (.059)4.10 (.161)3.90 (.153)TRLFEED DIRECTION 10.90 (.429)10.70 (.421)16.10 (.634)15.90 (.626)1.75 (.069)1.25 (.049)11.60 (.457)11.40 (.449)15.42 (.609)15.22 (.601)4.72 (.136)4.52 (.178)24.30 (.957)23.90 (.941)0.368 (.0145)0.342 (.0135)1.60 (.063)1.50 (.059)13.50 (.532)12.80 (.504)330.00(14.173) MAX.27.40 (1.079)23.90 (.941)60.00 (2.362) MIN.30.40 (1.197) MAX.26.40 (1.039)24.40 (.961)NOTES :1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER.3. DIMENSION MEASURED @ HUB.4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.D 2Pak Tape & Reel InfomationData and specifications subject to change without notice.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .08/04。

IGBT

IGW15N120H3
STGW40N120KD
STGW40NC60WD
FGH60N60UFDTU
FSAM15SM60A
STGY50NC60WD
HGTG27N120BN
IRG4PC30FDPBF
IRGP4066DPBF
HGTG40N60A4
STGD7NC60HT4
STGW20NC60VD
FGA25N120ANTDTU
2SC0435T2A0-17
STGF7NB60SL
FNA41560
STGW60H65F
STGB20NC60V
STGIPL14K60
STGW35NC120HD
HGTP10N120BN
STGIPS14K60T
IRG7PH46UDPBF
IRG4RC10UTRPBF
IRGP4062DPBF
FGPF4533
SKW15N60
IRG7I313UPBF
IRG4PC40UD-EPBF
FGH80N60FD2TU
IRG4PC30FPBF
STGP18N40LZ
IRG7PH42U-EP
IRGP4066-EPBF
HGTG10N120BND
IRGP4063DPBF
FGH75N60UFTU
STGD10NC60KT4
STGIPL20K60
STGIPS20K60
STGWA45HF60WDI
FGL60N100BNTD
STGD18N40LZT4
STGIPS10K60T
IRG7PH42UPBF
HGTG30N60A4
STGW45HF60WD

格兰兰电磁炉产品说明书

G_EC_PL_INDUCRTCS_GIU50 (Rev 8)IMPORTANTInduction Cookers manufactured with RTCS Technology will have FIVE DIGITS in the center of the serial number . Example: BA06.00001.0505Induction Cookers RTCS Technology(R eal-timeT emperatureC ontrol S ystem)5.0 kW & 5.5 kW modelsPhone(US&Canada):180****6668Fax(US&Canada):180****7745Quality Factory Replacement Parts for the World’s Finest Foodservice Equipment SolutionsThis parts list is updated regularly. Please find the most current revisionon our website @ G_EC_PL_INDUCRTCS_GIU50 (Rev 8)Page 3Table of ContentsBase Line (Countertop) — GI-SH/BA 5000 / Unit# 99560007 / 5.0kW, 208V, 50/60Hz . . . . . . . . . . . . . . .4Countertop Wok Line — GI-SH/WO 5000 / Unit# 99570004 / 5.0kW, 208V, 50/60Hz . . . . . . . . . . . . . . . .6Install Line — GI-SH/IN 5000 / Unit# 99580007 / 5.0kW, 208V, 50/60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . .8Install Wok Line — GI-SH/WO/IN 5000 / Unit# 99580019 / 5.0kW, 208V, 50/60Hz . . . . . . . . . . . . . . . . . .10Multi-Function (Digital Control) Line — SH/MU 5500 / Unit# 99590004 / GMIU 5.5kW 208V 60Hz . . .12Repair Accessories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15Induction Cookers RTCS Technology(R eal-time T emperature C ontrol S ystem)5.0 kW & 5.5 kW models15A15B13B13A12A12BORG_EC_PL_INDUCRTCS_GIU50 (Rev 8)Table of ContentsCLICKGARLAND PARTS IDENTIFICATIONRTCS Induction Base Line (Countertop) Cooker5.0kW 208V 50/60Hzmodel GI-SH/BA 5000 (UNIT# 99560007)ITEM PART #DESCRIPTION QUANTITY 198300101Upper Case SH/BA Assembly (Includes items 10, 11 & 12)1 298300032Case Complete Top SH/BA Assembly (Includes items 1, 13, 14 &15)1 398200030Base Assembly (Includes items 22 - 28, 30 - 33)1 493003080Induction Coil #3.08 includes CU Sensors1 598021710Power Board 5kW (I217 Version). Board Includes items 6, 20 & 21.1 IMPORTANT After replacing one or both of items 4 and 5, you MUST RESET ALL PARAMETERS usingthe IR adapter tool (part# 98990001). Please refer to the service manual for instructions. 672291120Heat Sink Pad 215 x 98 x 5 mm1 894040050CU1/CU2 Sensors1 972115028Coil Carrier Sheet – Single1 1072140130Upper Case “SH/BA”1 1177322001Ceran Glass 320x320mm112A3012601Control Label/Overlay (0-12)Note: Designed to use with Knob (13A) part# 39400004.112B66000002Control Label/OverlayNote: Designed to use with Knob (13B) part# 39400001.113A39400004Plastic Knob, PlainNote: Designed to use with Label/Overlay (12A) part# 3012601.113B39400001Plastic Knob, with Dail 0-12Note: Designed to use with Label/Overlay (12B) part# 660000021.1 1494010000Control Switch 2 Pole with Potentiometer115A35624001Front Indicator Lamp 24V LED Green - Black HousingNote: NOT interchageable with item 15B.115B35624009Front Indicator Lamp 24V LED Green - Chrome HousingNote: NOT interchageable with item 15A.1 1660595004Screws M5 x 124 1765840001Coil Pin4 1873000002Coil Spring4 1960528501Plastic Screws For Coil M5x84 2034120159Fuse SUT 15amp 250v 6.3x322 2134110019Fuse T1.0A1 2239500001Screw Nut PG 13.51 2339500007Screwed Cable Gland PG 13.5124A38625040Power Cord Cable ONLY UL 4 x 2.5124B32750400Power Cord Plug USA Nema Type1 2539331602Mains Line Filter 3 P/H 16A1 2694090011Radial Fan 24V DC1 2771000006Foot 40x40 M84 2861421201Knurled Nut, Height Adjustable Foot4 3071000003Air Intake Filter1 3172291120Heat - Sink Pad1 3272261030Frame for Air Intake Filter1 3372142470Air Deflector1* NOT ILLUSTRATEDRECOMMENDED STOCK PARTSG_EC_PL_INDUCRTCS_GIU50 (Rev 8)Page 51617181025OR13A15A12A12B13B15BORG_EC_PL_INDUCRTCS_GIU50 (Rev 8)Page 6Table of ContentsCLICKGARLAND PARTS IDENTIFICATIONRTCS Induction Cooker Countertop Wok Line5.0kW 208V 50/60Hzmodel GI-SH/WO 5000 (UNIT# 99570004)ITEM PART #DESCRIPTION QUANTITY 198300108Upper Case SH/WO Assembly (Includes items 11 & 12)1 298300033Top Case Complete Assembly (Includes items 1, 4, 13, 14, 15, 16, 17 & 18)1 398200030Base Assembly (Includes items 22 - 28, 30 - 33)1 493203011Induction Wok Coil #203.01 With Sensor1 598021711Power Board WOK 5kW (I217 Version) - Item Includes: 6, 20 & 211 IMPORTANT After replacing items 5, you MUST RESET ALL PARAMETERS usingthe IR adapter tool (part# 98990001). Please refer to the service manual for instructions.672291120Heat Sink Pad 215 x 98 x 5 mm1 1098100101Sheet Metal with Ferrit11177302001Ceran Wok BowlNote: Item listed for reference only. Not Sold Separately.112A3012601Control Label/Overlay (0-12)Note: Designed to use with Knob (13A) part# 39400004.112B66000002Control Label/OverlayNote: Designed to use with Knob (13B) part# 39400001.113A39400004Plastic Knob, PlainNote: Designed to use with Label/Overlay (12A) part# 3012601.113B39400001Plastic Knob, with Dail 0-12Note: Designed to use with Label/Overlay (12B) part# 660000021.1 1494010000Control Switch 2 Pole w/Potentiometer115A35624001Front Indicator Lamp 24V LED Green - Black HousingNote: NOT interchageable with item 15B.115B35624009Front Indicator Lamp 24V LED Green - Chrome HousingNote: NOT interchageable with item 15A.1 1660056702Washer4 1773000004Compression Spring4 1860678301Nut4 2034120159Fuse SUT 15amp 250v 6.3x322 2134110019Fuse T1.0A1 2239500001Screw nut PG 13.51 2339500007Screwed Cable Gland PG 13.5124A38625040Power Cord Cable ONLY UL 4 x 2.5124B32750400Power Cord Plug USA Nema Type1 2539331602Mains Line Filter 3 P/H 16A1 2694090011Radial Fan 24V DC1 2771000006Foot 40x40 M84 2861421201Knurled Nut, Height Adjustable Foot4 3071000003Air Intake Filter1 3172291120Heat - Sink Pad1 3272261030Frame for Air Intake Filter1 3372142470Air Deflector1* NOT ILLUSTRATEDRECOMMENDED STOCK PARTSG_EC_PL_INDUCRTCS_GIU50 (Rev 8)Page 7(compulsory for an install line unit)21A2921BORG_EC_PL_INDUCRTCS_GIU50 (Rev 8)Table of ContentsCLICKGARLAND PARTS IDENTIFICATIONRTCS Induction Cooker Install Line 5.0kW 208V 50/60Hzmodel GI-SH/IN 5000 (UNIT# 99580007)ITEM PART #DESCRIPTION QUANTITY 198300021Ceran Glass Top SH/IN Assembly (Includes items 10, 11 & 12)1 294030004Main Control Assembly (Includes items 21, 22, 23, 24, 33, 34 & 44)1 393003080Induction Coil #3.08 includes CU Sensors1 598021710Power Board 5kW (I217 Version). Board Includes items 6, 19 & 20.1IMPORTANT After replacing one or both of these items, you MUST RESET ALL PARAMETERS usingthe IR adapter tool (part# 98990001). Please refer to the service manual for instructions.672291120Heat Sink Pad 215 x 98 x 5 mm1 994040050CU1/CU2 Sensors1 1077322001Ceran Glass 320 x 320 mm1 1170000002Silicone Strips 306 x 6 x 4 mm4 1272211032Mounting Frame (Ceran Glass not included)1 1372144550Front Sheet SH/IN1 1472144570Coil Carrier SH/IN1 1560595004Screws M5 x 124 1673000002Coil Spring4 1765840001Coil Pin4 1860528501Plastic Screws For Coil M5X84 1934120159Fuse SUT 15amp 250v 6.3x322 2034110019Fuse T1.0A121A35624001Front Indicator Lamp 24V LED Green - Black HousingNote: NOT interchageable with item 21B. 121B35624009Front Indicator Lamp 24V LED Green - Chrome HousingNote: NOT interchageable with item 21A. 1 2294010000Control Switch (2 Pole) w/Potentiometer1 2339400001Plastic Knob 0-121 2432950902Harness Main Control1 2572144510Bottom Sheet SH/IN1 2639500009Screwed Cable Gland PG 161 2739500003Screw Nut PG 16128A38625040Power Cord Cable Only UL 4x2.5128B32750400Power Cord Plug USA Nema Type1 2939331602Mains Line Filter 3 P/H 16A1 3032960901Female Plug1 3194090002Axial Fan13272291120Heat Sink PadIMPORTANT: During installation, you must remove and discard the centerpiece of the Heat Sink Pad for fan ventilation.13372282180Connector Box Switch - S/S1 72261070Connector Box Switch - Plastic1 3472244100Front Panel (Without Guard)1 3571000003Air Intake Filter1 3672183091Grease Filter Holder1 3772263020Air Conductor Holder1 3876000002Clamp2 3976000001Air Conductor Aluminum1 4070000015Silicone Glue PACTAN 70761 4176000003Chalking Gun - Silicone Glue1 4466000067Label/Overlay - Install-Line (NO Protective Guards)1* NOT ILLUSTRATEDRECOMMENDED STOCK PARTSG_EC_PL_INDUCRTCS_GIU50 (Rev 8)Page 92921A21BORG_EC_PL_INDUCRTCS_GIU50 (Rev 8)Page 10Table of ContentsCLICKGARLAND PARTS IDENTIFICATIONRTCS Induction Cooker Install Wok Line 5.0kW 208V 50/60Hzmodel GI-SH/WO/IN 5000 (UNIT# 99580019)ITEM PART #DESCRIPTION QANTITTY 198300112Ceran Wok Top Assembly (Includes Wok Bowl)1 295141221Trough with Ferrit for Install Wok Line1394030004Main Control Assembly (NO Knob Gards)(Includes items 21, 22, 23, 24, 33, 34 & 44)1 493203011Induction Wok Coil #203.01 With Sensor1 598021711Power Board WOK 5kW (I217 Version) - Item Includes: 6,19 & 201 IMPORTANT After replacing items 5, you MUST RESET ALL PARAMETERS usingthe IR adapter tool (part# 98990001). Please refer to the service manual for instructions. 1572144550Front Sheet SH/IN1 1660056702Washer4 1773000004Compression Spring4 1860678301Nut4 1934120159Fuse SUT 15amp 250v 6.3x322 2034110019Fuse T1.0A121A35624001Front Indicator Lamp 24V LED Green - Black HousingNote: NOT interchageable with item 21B. 121B35624009Front Indicator Lamp 24V LED Green - Chrome HousingNote: NOT interchageable with item 21A. 1 2294010000Control Switch 2 Pole w/Potentiometer1 2339400001Plastic Knob with Dial 0-121 2432950902Harness Main Control1 2572144510Bottom Sheet SH/IN1 2639500009Screwed Cable Gland PG 161 2739500003Screw Nut PG 16128A38625040Power Cord Cable Only UL 4x2.5128B32750400Power Cord Plug USA Nema Type1 2939331602Mains Line Filter 3 P/H 16A1 3032960901Female Plug1 3194090002Axial Fan (SH/IN Models)13272291120Heat Sink PadIMPORTANT:During installation, you must remove and discard the centerpiece of the Heat Sink Pad for fan ventilation.13372282180Connector Box Switch - S/S1 72261070Connector Box Switch - Plastic1 3472244100Front Panel (without Protective Guards)1 3571000003Air Intake Filter1 3672183091Grease Filter Holder1 3772263020Air Conductor Holder1 3876000002Clamp2 3976000001Air Conductor Aluminum1 4070000015Silicone Glue PACTAN 70761 4176000003Chalking Gun - Silicone Glue1 4466000067Label/Overlay - Install-Line (NO Protective Guards)1* NOT ILLUSTRATEDRECOMMENDED STOCK PARTSG_EC_PL_INDUCRTCS_GIU50 (Rev 8)Page 1145Page 12Table of Contents CLICKGARLAND PART IDENTIFICATIONRTCS Induction Cooker Multi-Function (Digital Control ) Line5.5kW 208V 60Hzmodel SH/MU 5500 (UNIT# 99590004)ITEM PART #DESCRIPTION QUANTITY 198300008Case Upper Part Complete - Item included 9,10,11,12,13 & 141 293003031Coil # 3.04 With PTC-sensing Element And Sensor Coil1 8949000054-Pin Cable for Multi-Line Keyboard193012603Garland Overlay1 1072185081Case Upper Part1 1177322001Ceran Glass 322 x 322mm1 1270000002Silicone Stripes 306 x 6 x 4mm4 1398403301Keyboard1 1461404901Spacer4 1594040010PTC-Sensor with Insulation and Plug 1-Kohms1 1669000011Spacer 4mm4 1730000110Ferrit 110mm1 1860595004Hexagon Screw M5 x124 1973000002Compression Spring 1.1 x 13.6 x 45.74 2065840001Distance Bolt M5 x 234 2160528501Cup Bolt M5x84 2272115028Coil Carrier Sheet Single1 2333143021Heat Sink SH Single1 2442403030Rectifier 3Ph1 2595000005Screws For Rectifier4 2647301000IGBT C5 - Transistor Module1 2795000007Screws for IGBT - Transistor Module3 2894040001NTC 20KOhm Heat Sink Sensor - 160mm1 2972116012Side Sheet1 3091016180Power Print 3N208/3.5 SH/W ([Power Board)1 3194900001Cable Single CPU (Logic Board - Power PCB Cable) 10Pin1 3234110019Fuse T1A 250V 5x201 3334120109Fuse T10A 250V 6.3x321 3498401808CPU-Print Multi-Line (Logic Board)1 3564070001Spacer M4x83664070007Spacer Double Locking3764070005Spacer M4x702 3839500003Screw Nut PG 161 3939500009Screwed Cable Gland PG 16140A38625040Mains Cable UL 4 x 2.5 mm 2140B32750400Mains Plug USA NEMA 15-20P1 4172142011Air Duct Single1 4239223001Radial Fan 230V1 4372185039Bottom Sheet1 4571000003Grease filter1 4671000006Foot 40x40 M84 4761421201Knurled Nut, Height Adjustable Foot4 4890101000Measuring Amplifier1 4972261030Frame for Air Intake Filter1 5072142470Air Deflector1* NOT ILLUSTRATEDRECOMMENDED STOCK PARTSG_EC_PL_INDUCRTCS_GIU50 (Rev 8)Page 13G_EC_PL_INDUCRTCS_GIU50 (Rev 8)Page 141245GARLAND PARTS IDENTIFICATIONRTCS Induction CookersREPAIR ACCESSORIESITEM PART #DESCRIPTION QUANTITY198990001IR Box 1270000020Heat Conducting Paste P1213*70000022High Temperature Tape 1494900096Service Plug 1539800001USB- RS232 Adapter1* NOT ILLUSTRATED RECOMMENDED STOCK PARTSGARLAND PARTS IDENTIFICATIONRevision HistoryREV. # PAGE # ITEM # NOTES DATE 0Book Released MAY 15/06151,2,10,14,24A,25Description ChangedJUN 02/06 714,24A,2591,12,22,28A29,38, 39111,22,28A29,38,394,56,710,113Was Item 54,5Was Item 3 & 4 – Also Note Added Under Description8,92Was Item 4 – Drawing Modified3,4Was Item 2 & 3 – Also Note Added Under Description2Part List Renamed -Was: 5.0 Kw RTCS Induction Unit (Rev 1).pdfJUL 06/06 7 & 11Important Notice Modified (Below Item 5)12.13Multi-line Model Inserted35,721New Part # – Was 34128004 (Fuse T0.8A)JAN 11/07 9,112044New Drawing – Item # 4 Relocated, Item # 9 AddedMAR 09/07 59New Part Number – Part Not Included in The Kit Item #4555New Part Number & Description Was 98011716(Power Board - Item Includes: 20 & 21)MAR 31/07 75New Part Number & Description Was 98011717(Power Board - Item Includes: 20 & 21)94New Part Number & Description Was 98011716(Power Board - Item Includes: 19 & 20)115New Part Number & Description Was 98011717(Power Board - Item Includes: 19 & 20)64,6,8,10New drawingNOV 24/10 5,7,9,11New part number added - 72291120 (Heat - Sink Pad)129Part number change - was 660000615,7 (9,11)20,(19)Part number changed - was 34120109 (Fuse T10A)75,94,3Part number changed - was 93003032APR 01/1181344Remove grease filter frame (metal) - 72261022. Replaced by plastic frame.APR 30/12 12 - 1349, 50Added filter frame (72261030) and deflector (72142470) to all counter linemodels.4 - 732, 334 - 58Sensor - Added 94040050.8 - 99Sensor - Added 94040050.8 - 9, 10-1121B, 33, 34, 44Added: Sensor (94040050), LED Lamp (35624009), Connecto Box Switch(72282180 / 72261070), Panel (72244100), Overlay (66000067)4 - 712B, 15B, 13A Overlay / Knob / LED Lamp - Added - Overlay 66000002; front LED light 35624009;Control Knob 394000044 - 96Heat Sink Pad - Added 722911204, 6, 8, 10Revised illustration for plug.++ Page#/Item# reference the specific page/item numbers in the corresponding Revision version only.G_EC_PL_INDUCRTCS_GIU50 (Rev 8)Page 15。

IRFBC30中文资料

IRFBC30N -CHANNEL 600V -1.8Ω-3.6A -TO-220PowerMESH ™ΙΙ MOSFETs TYPICAL R DS(on)=1.8Ωs EXTREMELY HIGH dv/dt CAPABILITY s 100%AVALANCHE TESTEDs VERY LOW INTRINSIC CAPACITANCES sGATE CHARGE MINIMIZEDDESCRIPTIONThe PowerMESH ™ΙΙis the evolution of the first generation of MESH OVERLAY ™.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed,gate charge and ruggedness.APPLICATIONSs HIGH CURRENT,HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS)s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER®INTERNAL SCHEMATIC DIAGRAMJanuary 2000ABSOLUTE MAXIMUM RATINGSSymbol ParameterValue Unit V DS Drain-source Voltage (V GS =0)600V V DGR Drain-gate Voltage (R GS =20k Ω)600V V GS Gate-source Voltage±20V I D Drain Current (continuous)at T c =25o C 3.6A I D Drain Current (continuous)at T c =100o C 2.3A I DM (•)Drain Current (pulsed)14A P tot Total Dissipation at T c =25o C 75W Derating Factor0.6W/o C dv/dt(1)Peak Diode Recovery voltage slope 3V/nsT s tg Storage Temperature-65to 150o C T jMax.Operating Junction Temperature150oC(•)Pulse width limited by safe operating area(1)I SD ≤3.6A,di/dt ≤60A/µs,V DD ≤V (BR)DSS ,Tj ≤T JMAXTYPE V DSS R DS(on)I D IRFBC30600V<2.2Ω3.6A123TO-2201/8THERMAL DATAR thj-case Rthj-amb R thc-sinkT l Thermal Resistance Junction-case MaxThermal Resistance Junction-ambient MaxThermal Resistance Case-sink TypMaximum Lead Temperature For Soldering Purpose1.762.50.5300o C/WoC/Wo C/Wo CAVALANCHE CHARACTERISTICSSymbol Parameter Max Value UnitI AR Avalanche Current,Repetitive or Not-Repetitive(pulse width limited by T j max)3.6AE AS Single Pulse Avalanche Energy(starting T j=25o C,I D=I AR,V DD=50V)300mJELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)OFFSymbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-sourceBreakdown VoltageI D=250µA V GS=0600VI DSS Zero Gate VoltageDrain Current(V GS=0)V DS=Max RatingV DS=Max Rating T c=125o C150µAµAI GSS Gate-body LeakageCurrent(V DS=0)V GS=±20V±100nA ON(∗)Symbol Parameter Test Conditions Min.Typ.Max.Unit V GS(th)Gate ThresholdVoltageV DS=V GS I D=250µA234VR DS(on)Static Drain-source OnResistanceV GS=10V I D=2.2A 1.8 2.2ΩI D(o n)On State Drain Current V DS>I D(o n)x R DS(on)ma xV GS=10V3.6A DYNAMICSymbol Parameter Test Conditions Min.Typ.Max.Unitg f s(∗)ForwardTransconductanceV DS>I D(o n)x R DS(on)ma x I D=2.2A 2.5SC iss C os s C rss Input CapacitanceOutput CapacitanceReverse TransferCapacitanceV DS=25V f=1MHz V GS=04757210pFpFpFIRFBC30 2/8ELECTRICAL CHARACTERISTICS(continued)SWITCHING ONSymbol Parameter Test Conditions Min.Typ.Max.Unitt d(on) t r Turn-on TimeRise TimeV DD=250V I D=2.5AR G=4.7 ΩV GS=10V(see test circuit,figure3)1414nsnsQ g Q gs Q gd Total Gate ChargeGate-Source ChargeGate-Drain ChargeV DD=480V I D=3.6A V GS=10V16.52.5923.1nCnCnCSWITCHING OFFSymbol Parameter Test Conditions Min.Typ.Max.Unitt r(Voff) t f t c Off-voltage Rise TimeFall TimeCross-over TimeV DD=480V I D=3.6AR G=4.7 ΩV GS=10V(see test circuit,figure5)151924nsnsnsSOURCE DRAIN DIODESymbol Parameter Test Conditions Min.Typ.Max.UnitI SD I SDM(•)Source-drain CurrentSource-drain Current(pulsed)3.614AAV SD(∗)Forward On Voltage I SD=3.6A V GS=0 1.6Vt rr Q rr I RRM Reverse RecoveryTimeReverse RecoveryChargeReverse RecoveryCurrentI SD=5A di/dt=100A/µsV DD=100V T j=150o C(see test circuit,figure5)6002.89nsµCA(∗)Pulsed:Pulse duration=300µs,duty cycle1.5%(•)Pulse width limited by safe operating areaSafe Operating Area Thermal ImpedanceIRFBC303/8Output Characteristics TransconductanceGate Charge vs Gate-source Voltage Transfer CharacteristicsStatic Drain-source On Resistance Capacitance VariationsIRFBC30 4/8Normalized Gate Threshold Voltage vs TemperatureSource-drain Diode Forward Characteristics Normalized On Resistance vs TemperatureIRFBC305/8Fig.1:Unclamped Inductive Load Test Circuit Fig.3:Switching Times Test Circuits For Resistive Load Fig.1:Unclamped Inductive Waveform Fig.4:Gate Charge test CircuitFig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesIRFBC306/8DIM.mminch MIN.TYP.MAX.MIN.TYP.MAX.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.402.720.0940.107D1 1.270.050E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.4 2.70.0940.106H210.010.400.3930.409L216.40.645L413.014.00.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.2 6.60.2440.260L9 3.5 3.930.1370.154DIA.3.75 3.850.1470.151L6ACDED 1FGL7L2Dia.F 1L5L4H 2L9F 2G 1TO-220MECHANICAL DATAP011CIRFBC307/8Information furnished is believed to be accurate and reliable.However,STMicroelect r onics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third part i es which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics.Specification mentioned in this publication are subject to change without notice.This publication supersedes and replaces all informat i on previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics©1999STMicroelectronics –Printed in Italy –All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia -Brazil -China -Finland -France -Germany -Hong Kong -India -Italy -Japa n -Malaysia -Malta -Morocco -Singapore -Spain -Sweden -Switzerland -United Kingdom -U.S.A..IRFBC308/8。

四季电子4K resolution监视器使用指南说明书

User GuideIMPORTANT SAFETY INSTRUCTIONS Please read User Guide before using this product.Please keep User Guide for future reference.Please read the cautions to prevent possible danger and loss of property.FEATURESVersatile 4K/QFHD Input CapabilityThis monitor is equipped with standard 12G-SDI inputinterface(x2), 3G/HD-SDI input interface(x2) and support 4K2-sample interleave signals and 4K square division signals.Supporting 12G/6G-SDI(4K) 2 Channel, 3G/HD-SDI (Level A/B) 2 Channel.Quad Link Square Division.Quad Link 2 Sample Interleave (2SI)Ultra HD 4K screens containing 8.3 million pixel (3840×2160), so the resolution is four times that of Full HD.Image flip offers great convenience for user’s user to place the monitor with various mounting methods under differentconditions. Users can view the monitor normally no matter whatmounting angles.CAUTIONSPlease do not place the display screen towards the ground.Please avoid heavy impact or drop onto the ground.Please do NOT use chemical solutions to clean this product.Please wipe with a clean soft cloth to maintain the brightness ofthe surface.Please do not block any vent hole.Please follow the instructions and trouble-shootings to adjust the product. Other improper adjustment may result in damage. Anyfurther adjustment must be performed or conducted by aqualified technician.Please unplug the power and remove the battery if long-term no-use, or thunder weather.Contents1、PRODUCT DESCRIPTION (3)2. SUN SHADE INSTALLATION (7)3. MENU SETTING (8)4、Connecting the SDI signals (11)5、Available Signal Formats (12)6、ACCESSORIES (15)7、PARAMETERS (16)8、TROUBLE SHOOTING (17)1、PRODUCT DESCRIPTIONFront1. Speaker2. SDI buttons / lampPress to monitor the signal input to each connector.[SINGLE] Button/Lamp- Press the button to select SDI input for one channel.- Mode changes in the order of [12G SDI 1] , [12G SDI 2] , [3G SDI 3] , [3G SDI 4].[2SI] Button/Lamp-Press the button to select 2-SAMPLE Interleave SDI input signal through two or four SDI input connectors.- Mode changes in the order of [Dual-Link 2SI], [Quad-Link 2SI]. [SQUARE] Button/Lamp- Press the button to select [Quad-Link Square Division] mode.3. HDMI 1 ~ 4 buttons / lampPress the button to select HDMI input.4. MENU/RETURN buttonActivates and deactivates the display of the Main Menu.Press to enter option in the menu.When the on-screen menu is not displayed, if this button is pressed the main menu is display.When the menu is displayed, press the button to return to the previous menu.5. ◄buttonSelect option in the menu.Decrease the option value.Before enter the menu, single press to activate volume, press again to switch among of volume, brightness, contrast, color, hue, sharpness and backlight.6. ► buttonSelect option in the menu.Increase the option value.7. EXITBack or exit.8. F1~F4 User definable buttonsPress to adjust or turn on/off the assigned function.The following functions are assigned at the factory.F1：Display Mode F2：Display RotateF3：Safety Marker F4：Aspect（functions can be customized by long keep pressing any one of the4 buttons）9．Power indicating lightPower on，the indicator flashes in green.10．Earphone jackBack1.Handle2.Connector protectorPreventing connectors from damage.B port (Only for program upgrades, do NOT use ifnon-professionals).4.TALLY port5.SDI input connectors (BNC)Input connectors for SDI signals. For details, see “Connec ting the SDI Signals” (page 11)6.SDI output connectors (BNC)Output connector for SDI signals.Each connector outputs the signal which is input to the corresponding SDI IN connector.Note - Output is activated only when the power is on. Output is not activated in standby mode.7.HDMI input connectors。

FPGA可编程逻辑器件芯片EP4CE40F23I7中文规格书

Chapter 6:I/O Features in Arria II DevicesI/O Standards Support Arria II Device Handbook Volume 1: Device Interfaces and IntegrationI/O Standards SupportTable 6–1 lists the supported I/O standards for Arria II GX devices and the typicalvalues for input and output V CCIO , V CCPD , V REF , and board V TT .Table 6–1.I/O Standards and Voltage Levels for Arria II GX Devices I/O Standard StandardSupportV CCIO (V) V CCPD (V) V REF (V) V TT (V) Input Operation Output Operation 3.3-V LVTTL/3.3-V LVCMOS JESD8-B3.3/3.0/2.5 3.3 3.3——3.0-V LVTTL/3.0-V LVCMOS JESD8-B3.3/3.0/2.5 3.0 3.0——2.5-V LVTTL/LVCMOS JESD8-53.3/3.0/2.5 2.5 2.5——1.8-V LVTTL/LVCMOS JESD8-71.8/1.5 1.82.5——1.5-V LVCMOS JESD8-111.8/1.5 1.52.5——1.2-V LVCMOS JESD8-121.2 1.22.5——3.0-V PCI PCI Rev 2.23.0 3.0 3.0——3.0-V PCI-X (1)PCI-X Rev 1.03.0 3.0 3.0——SSTL-2 Class I, II JESD8-9B(2) 2.5 2.5 1.25 1.25SSTL-18 Class I, II JESD8-15(2) 1.8 2.50.90 0.90SSTL-15 Class I —(2) 1.5 2.50.750.75HSTL-18 Class I, II JESD8-6(2) 1.8 2.50.900.90HSTL-15 Class I, II JESD8-6(2) 1.5 2.50.750.75HSTL-12 Class I, II JESD8-16A(2) 1.2 2.50.60.6Differential SSTL-2JESD8-9B(2), (3) 2.5 2.5— 1.25Differential SSTL-18JESD8-15(2), (3) 1.8 2.5—0.90Differential SSTL-15 —(2), (3) 1.5 2.5—0.75Differential HSTL-18JESD8-6(2), (3) 1.8 2.5—0.90Differential HSTL-15JESD8-6(2), (3) 1.5 2.5—0.75Differential HSTL-12JESD8-16A(2), (3) 1.2 2.5—0.60LVDS ANSI/TIA/EIA-644(2) 2.5 2.5——RSDS and mini-LVDS —— 2.5 2.5——LVPECL —(2)— 2.5——BLVDS—(2) 2.5 2.5——Notes to Table 6–1:(1)PCI-X does not meet the PCI-X I-V curve requirement at the linear region.(2)Single-ended SSTL/HSTL, differential SSTL/HSTL, LVDS, LVPECL, and BLVDS input buffers are powered by V CCPD .(3)Differential SSTL/HSTL inputs use LVDS differential input buffers without R D OCT support.Chapter 6:I/O Features in Arria II DevicesI/O Structure Arria II Device Handbook Volume 1: Device Interfaces and IntegrationI/O StructureThe I/O element (IOE) in the Arria II devices contains a bidirectional I/O buffer andI/O registers to support a completely embedded bidirectional single data rate (SDR)or double data rate (DDR) transfer. The IOEs are located in I/O blocks around theperiphery of the Arria II device. There are up to four IOEs per row I/O block and fourIOEs per column I/O block. The row IOEs drive row, column, or direct linkinterconnects. The column IOEs drive column interconnects.The Arria II bidirectional IOE supports the following features:■Programmable input delay ■Programmable output-current strength ■Programmable slew rate ■Programmable bus-hold ■Programmable pull-up resistor ■Programmable output delay ■Open-drain output ■R S OCT ■R D OCT ■R T OCT for Arria II GZ devices ■Dynamic OCT for Arria II GZ devices ■PCI clamping diode 1517-pinFlip Chip FBGAI/O726726726Clock 888XVCR channel242424Note to Table 6–6:(1)Each transceiver channel consists of two Tx pins, two Rx pins and a transceiver clock pin.Table 6–6.Pin Migration Across Densities in Arria II GZ Devices (Note 1)(Part 2 of 2)PackagePin Type DeviceEP2AGZ225EP2AGZ300EP2AGZ350Chapter 6:I/O Features in Arria II DevicesI/O Structure Arria II Device Handbook Volume 1: Device Interfaces and Integration MultiVolt I/O InterfaceArria II architecture supports the MultiVolt I/O interface feature that allows Arria IIdevices in all packages to interface with systems of different supply voltages.You can connect the VCCIO pins to a power supply voltage level listed in Table 6–10,depending on the output requirements. The output levels are compatible withsystems of the same voltage as the power supply. (For example, when VCCIO pins areconnected to a 1.5-V power supply, the output levels are compatible with 1.5-Vsystems).You must connect the Arria II GX VCCPD power pins to a 2.5-, 3.0-, or 3.3-V powersupply and the Arria II GZ VCCPD power pins to a 2.5- or 3.0-V power supply. Usingthese power pins to supply the pre-driver power to the output buffers increases theperformance of the output pins. Table 6–10 lists the Arria II MultiVolt I/O support.Table 6–10.MultiVolt I/O Support for Arria II Devices (Note 1)VCCIO (V)(2)Input Signal (V)Output Signal (V)1.2 1.5 1.8 2.5 3.0 3.3 1.2 1.5 1.8 2.5 3.0 3.31.2v —————v —————1.5—v v ————v ————1.8—v v —————v ———2.5———v v (3)(4)v (3)(4)———v ——3.0———v v (4)v (4)————v —3.3 (5)———v v (4)v (4)—————v Notes to Table 6–10:(1)The pin current may be slightly higher than the default value. You must verify that the driving device’s V OL maximum and V OH minimum voltagesdo not violate the applicable Arria II V IL maximum and V IH minimum voltage specifications.(2)Each I/O bank of an Arria II device has its own VCCIO pins and supports only one V CCIO , either 1.2, 1.5, 1.8, 2.5, 3.0, or 3.3V. The LVDS I/O standardis not supported when V CCIO is 3.0 or 3.3V. The LVDS input operations are supported when V CCIO is 1.2, 1.5, 1.8, or 2.5V. The LVDS output operations are only supported when V CCIO is 2.5V.(3)Altera recommends using an external clamp diode when V CCIO is 2.5 V and the input signal is 3.0 or 3.3 V.(4)Altera recommends using an external clamp diode on the row I/O pins when the input signal is 3.0 or 3.3V for Arria II GZ devices.(5)Not applicable for Arria II GZ devices.。