Simulation of The Transient Response of Synchronous Machines

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专业英语翻译

专业英语翻译第一章1.An open-loop control system utilizes an actuating device to control the process directly without using feedback.一个开环控制系统使用直接装置控制，而无需使用反馈的过程。

2.A close-loop control system uses a measurement of the output and feedback of this signal to compare it with the desired output(reference or command).闭环控制系统采用了输出的测量值和输出的反馈并将输出和期望输出进行比较（参考或命令）。

词汇automation自动化Close-loop feedback control system闭环反馈控制系统complexity of design复杂的设计control system控制系统feedback signal反馈信号engineering design工程设计，multivariable control system多变量控制系统negative feedback负反馈productivity生产力. robot机器人. specifications规格. synthesi s综合. trade-off权衡第二章1.A linear system satisfies the properties of superposition and homogeneity.线性系统满足叠加性和其次性。

2.The denominator polynominal q(s),when set equal to zero,is called the characteristic equation because the roots of this equation determine the character of the time reponse.当分母多项式q（S）设置等于零时称为特征方程，因为这个方程的根确定的时间响应的特点。

基于ADAMS的转向特性仿真分析

基于ADAMS的转向特性仿真分析（武汉理工大学汽车工程学院）摘要：本文以齿轮齿条转向器为研究对象，借助于ADAMS软件对汽车转向系统的稳态和瞬态响应进行了详细的分析，完成了转向系统的建模仿真过程，对提升汽车的操纵稳定性有重要的意义。

关键词：转向系统ADAMS 稳态响应瞬态响应Abstract:Based on the software of ADAMS, this paper mainly analyses the steady response and transient response of automobile steering system, concentrating on rack and pinion steering gear. The modeling and simulation has been finished, which is of great importance to improve the control stability.Key Words:steering system ADAMS steady response transient response前言转向系统是一套用来改变或恢复汽车行驶方向的专设机构，其功用是保证汽车能按驾驶员的意志而进行转向行驶。

因此，转向系统是汽车底盘的重要组成部分，转向系统性能的好坏直接影响到汽车行驶的安全性、操纵稳定性和驾驶舒适性，它对于确保车辆的行驶安全、减少交通事故以及保护驾驶员的人身安全、改善驾驶员的工作条件起着重要作用。

随着私家车的越来越普遍，各式各样的高中低档轿车进入了人们的生活中。

快节奏高效率的生活加上们对高速体验的不断追求，也要求着车速的不断提高。

由于汽车保有量的增加和社会活生活汽车化而造成交通错综复杂，使转向盘的操作频率增大，转向系统就起到了至关重要的作用。

一、转向系统结构介绍汽车转向系统可按照转向能源的不同分为机械转向系统和动力转向系统两类。

SimulationofPMOS...

Simulation of PMOSFET Degradation Kinetics with TCAD SentaurusAbstractThis template demonstrates the use of TCAD Sentaurus for the simulation of thetrap formation kinetics of the Si–SiO2 interface and changes in the threshold voltageof a PM OSFET under negative gate bias, a scenario leading to negative biastemperature instability (NBTI). In this model, the activation energy of the Si-H bonddepassivation process depends on the hydrogen concentration, electric field, andhot-carrier current. The model also accounts for passivation of the silicon danglingbonds by the free hydrogen and its diffusion into the oxide region. Variousexperiments in the template address, in particular, the effects of temperature anddiffusion on the resulting I–V curves of the device.Version InformationThis application note has been designed and verified using TCAD SentaurusVersion Z-2007.03.Running it with previous or future versions may possibly require minor adjustments.Synopsys and the Synopsys logo are registered trademarks of Synopsys, Inc. Copyright © 2007 Synopsys, Inc. All rights reserved.IntroductionThe ability to model the reliability of devices and the mechanisms leading to the deterioration of their performance is of paramount importance to foundries and integrated device manufacturers (IDMs). These companies can cut the costs of test-chip manufacturing by identifying degradation-prone designs through simulation.Depassivation of Si-H bonds and trap formation on the Si–SiO2 interface in M OSFET devices are considered to be important mechanisms of device degradation [1]. Resulting from the trap formation, the negative bias temperature instability (NBTI) has become an issue for CMOS circuitry, shifting drive current, and the threshold voltage of the device [2].TCAD Sentaurus can be used to model predictively this phenomenon using the kinetic degradation model implemented in Sentaurus Device. In this model, the activation energy of Si-H bond-breaking is assumed to be H-density dependent. Furthermore, the energy depends parametrically on the device characteristics under the stress: the electric field and hot-carrier current. The depassivated hydrogen is allowed either to passivate partially the silicon dangling bonds or to diffuse into the oxide layer. A set of parameters allows users to calibrate the model to a particular device and stress conditions. An example of such calibration is presented in the literature [3], where the results of TCAD simulation using this model match the experimental data of an NM OSFET under four different stress conditions. The corresponding simulation flow is presented in the Sentaurus template project Simulation of NMOSFET Degradation Kinetics with TCAD Sentaurus.Considering the various modes of stress of the PMOS and NMOS parts in a CMOS device, the NBTI has been found to be a dominant degradation mechanism of a CM OS inverter, affecting mainly the PMOS part [2]. Therefore, the simulation here focuses on a single PMOS transistor.It is assumed that the user is familiar with the Sentaurus tool suite, in particular, Sentaurus Workbench (SWB), Sentaurus Structure Editor, Sentaurus Device, and Inspect. For an introduction and tutorials, refer to the Sentaurus training material.The focus of this project is to provide a setup that can be used as is or adapted to specific needs. The documentation focuses on aspects of the setups. For details about tool uses and specific tool syntax, refer to the respective manuals. General simulation setupThe simulation is organized as an SWB project. The tool flow of the project is discussed here. It consists of Sentaurus Structure Editor, which creates the analytic PM OS structure, Sentaurus Device, which calculates the device characteristics, and the visualization tool Inspect.Sentaurus Structure EditorThe PM OS structure is created with analytic doping profiles, and appropriate mesh refinements are created in this node. Two SWB parameters are introduced here:■Type is set to the value pMOS.■lgate is set to 0.065 μm.After the structure is created, the generated mesh and doping information are stored in the TDR format file, which is then passed to Sentaurus Device.Sentaurus Device: IdVg_initThe name of the first instance of Sentaurus Device is IdVg_init. It performs a low drain bias I d–V gs sweep for the given device.Inspect: PlotIdVg_initThe name of the subsequent instance of Inspect is PlotIdVg_init. It plots the low drain bias I d–V gs characteristics and extracts:■Vtgm_init [V]: Threshold voltage defined as the intersection of the tangent at the maximum transconductance g m with the V gs axis.■Id_init [A/μm]: Maximum value of the I d curve.■Ioff_init [A/μm]: Drain leakage current at a small value of the gate voltage.Sentaurus Device: DegradationThe next instance of Sentaurus Device is called Degradation. This node sets the appropriate bias conditions for the subsequent Si-H bond degradation simulation and calculates the final I–V characteristics.The following parameters control the simulation flow in this node:■Diffusivity [cm2/s]: This parameter defines the diffusion coefficient responsible for the diffusion of the free hydrogen into the oxide layer. Here, it is assigned the values of 10–15 cm2/s and 0 cm2/s.■Temperature [K]: This parameter controls the temperature at which the degradation simulation is performed. For each of the Diffusivity values, it is assigned the values 300 K and 400 K.Inspect: PlotTrapsThe Inspect instance named PlotTraps visualizes the maximum value of the trap concentration at the Si–SiO2 interface calculated in the transient simulation of the previous instance of Sentaurus Device.Inspect: PlotIdVg_finalI d–V gs curves calculated after the degradation simulation are plotted in the final Inspect instance named PlotIdVg_final. Similar to the first Inspect instance, the values of the characteristic threshold voltage and drain current (Vtgm_final, Id_final, and Ioff_final) are extracted.Tool-specific setupsDevice generation using Sentaurus Structure Editor and Sentaurus Mesh Sentaurus Structure Editor is used to define the PM OS devices in a fully parameterized manner. To adjust details of the devices, the user can modify the top section of the Sentaurus Structure Editor input file sde_dvs.cmd. For example, the substrate background doping level as well as the peak concentration of the halo implant are defined by setting the Scheme variables:(define SubDop 5e17); [1/cm3](define HaloDop 1e18); [1/cm3]The junction depth for the halo, the extension, and the source/drain implants are defined by setting the Scheme variables:(define XjHalo 0.07); [um] Halo depth(define XjExt 0.026); [um] Extension depth(define XjSD 0.12); [um] SD Junction depthThe extent of the nitride spacer and the gate oxide thickness are defined by setting the Scheme variables:(define Lsp 0.1); [um] Spacer length(define Tox 20e-4); [um] Gate oxide thickness Several other geometric, doping, and meshing parameters are accessible in a similar manner. The meshing strategy is designed to result in a high-quality mesh without excessive node counts for a large range of geometric parameters. Sentaurus Structure Editor calls a meshing engine to generate the structure files for Sentaurus Device. Sentaurus Mesh is called from within Sentaurus Structure Editor with:(sde:build-mesh "snmesh" "n@node@_half_msh")This command generates a device structure in TDR format, containing doping and grid data. It should be noted that only half of the PMOS structure is created by Sentaurus Structure Editor and meshed with Sentaurus Mesh. It is subsequently reflected about the vertical axis to obtain the full device. The reflection is performed in Sentaurus Structure Editor by a system call to Sentaurus Data Explorer (tdx): (system:command "tdx -mtt -x -ren drain=sourcen@node@_half_msh n@node@_msh")The option -x instructs Sentaurus Data Explorer to reflect the device along an axis defined by . The given half-structure has three contacts: drain, gate, and substrate, which are defined in sde_dvs.cmd. Of these, the gate and substrate contacts touch the axis of reflection and, upon reflection, are extended and thereby preserve their names. However, the drain contact in the reflected half is named drainmirrored by default. This contact is explicitly renamed to source with the tdx command-line option -ren. The device obtained withconcentration is shownDevice simulation using Sentaurus Device Sentaurus Device is used to simulate the drain current as a function of the gate voltage at a low drain bias (I d–V gs) before and after the simulation of Si-H bond degradation. As previously mentioned, the initial (before simulating the degradation) I–V curve is calculated in the first instance of Sentaurus Device. The degradation simulation and subsequent I–V calculation are performed in the second instance of Sentaurus Device. The initial I–V calculation is straightforward; therefore, in the next section only the latter instance is discussed in more detail.x x min=Sentaurus Device: DegradationThe PMOS is biased to a particular stress condition with the following Quasistationary statement, which ramps both the gate and drain voltages at the same time: Quasistationary(InitialStep=1e-3 Increment=1.35MinStep=1e-6 MaxStep=0.2Goal {Name="drain" Voltage=-0.6}Goal {Name="gate" Voltage=-1.2}){Coupled {Poisson hQuantumPotential HolehTemperature}}After the appropriate stress is set up, a transient simulation is performed simulating the kinetics of Si-H bond-breaking: Transient(InitialTime=0 Finaltime = 315e6Increment=2 InitialStep=0.1 MaxStep=1e7){Coupled {Poisson hQuantumPotential HolehTemperature}}Trap concentration along with other variables is stored in the respective Traps_n<number>_des.plt file, where <number> is the Sentaurus Device node in the Sentaurus Workbench project tree.The degradation model is invoked using the keyword Degradation in the Traps section of the material interface–specific physics. The syntax used in the Degradation_des.cmd file is:Physics(MaterialInterface="Silicon/Oxide"){Traps(Conc=1e8 EnergyMid=0 DonorDegradationActEnergy=2 BondConc=1e12DePasCoeff=8e-10 PasTemp=300FieldEnhan=(0 1 1.95e-3 0.33)CurrentEnhan=(0 1 1 1)PowerEnhan=(0 0 -1e-7)DiffusionEnhan=(2e-7@*****************.0e01e1315)}Refer to the Sentaur us Device User Guide for detailed information about the degradation model, its description, and associated keywords.The keyword CurrentPlot is used to store the value of the interface trap concentration (a minimum, maximum, or average value of the concentration, as well as the concentration at the particular node can be stored) at each convergent time step during transient simulations, in the aforementioned plot files:CurrentPlot{eTrappedCharge(Maximum(MaterialInterface = "Silicon/Oxide")) hTrappedCharge(Maximum(MaterialInterface = "Silicon/Oxide")) eInterfaceTrappedCharge(Maximum(MaterialInterface = "Silicon/Oxide")) hInterfaceTrappedCharge(Maximum(MaterialInterface = "Silicon/Oxide")) OneOverDegradationTime(Maximum(MaterialInterface = "Silicon/Oxide")) TotalInterfaceTrapConcentration(Maximum(MaterialInterface = "Silicon/Oxide"))}The resultant trap concentration is shown in Figure2. You can see that the trap concentration and the time interval, in which the steady-state occupation is reached, strongly depend on the diffusion coefficient and temperature. A higher temperature results in a larger trap concentration (characteristic of NBTI) and, for a particular temperature, a calculation accounting for the diffusion of the free hydrogen into the oxide layer also results in a larger trap concentration. The latter effect is observed because the hydrogen that diffused into the oxide cannot passivate backlabeled in legendA detailed analysis of the physical factors and model parameters affecting the general kinetic behavior of the implemented degradation model can be found in the literature [3], where the parameters of the TCAD simulation are calibrated so that the results of the trap accumulation kinetics match the experimental data obtained from an NMOS device.Another Quasistationary statement is invoked after the degradation calculation is completed to bring the device to the normal operating conditions. Finally, the V gs sweep is performed again to calculate I d–V gs characteristics after the degradation.A change in the initial I d–V gs dependency, induced by the traps accumulated in the channel, can be seen in Figure3 on page6.d gs ds mV,before (black dots) and after (solid lines, color code is the same asin Figure2) the degradation simulationExtraction and visualization with InspectIn the Sentaurus Workbench tool flow, the instances of Sentaurus Device are followed by an instance of Inspect. This tool plots the corresponding I–V characteristics and extracts relevant electrical parameters, as discussed in General simulation setup on page3.The extractions are performed using the Inspect library EXTRACT. The library is loaded with the command:load_library EXTRACT(Refer to the Inspect User Guide for a general description of the library.)The following routines of this library are used in this project.ExtractVtgmThis routine extracts the threshold voltage using the maximum transconductance method. The routine is called with:ExtractVtgm <Name> <Curve> <Type>where Name defines the name of the extracted parameter as it appears in the Variable Values view of Sentaurus Workbench, Curve refers to the name of the Inspect I d–V gs curve, and Type can be either "nMOS" or "pMOS". The routine passes the extracted value to Sentaurus Workbench and prints it to the log file. It also returns the value to Inspect. For example, the call:set Vt [ExtractVtgm Vtgm_init IdVg pMOS]results in output such as:DOE: Vtgm_init -0.339Vt (Max gm method): -0.339 VExtractMaxThis routine extracts the maximum drain current. The routine is called with:ExtractMax <Name> <Curve>where Name defines the name of the extracted parameter and Curve refers to the name of the Inspect I d–V gs curve. For example, the call:set Id [ExtractMax Id_final IdVg]results in output such as:DOE: Id_final 3.495e-05Imax: 3.495e-05 A/umExtractIoffThis routine extracts the drain leakage current. The routine is called with:ExtractIoff <Name> <Curve> <Voff>where Name defines the name of the extracted parameter, Curve refers to the name of the Inspect I d–V gs curve (computed for a high drain bias), and Voff defines the gate voltage at which the drain leakage current is extracted, typically, at a small nonzero value to avoid noise.For example, the call:if {$Type == "pMOS"} {set SIGN 1.0}else {set SIGN -1.0}set Ioff [ExtractIoff Ioff_init [expr $SIGN*1e-4]]results in output such as:DOE: Ioff_init 2.305e-10Ioff: 2.305e-10 A/um.References[1] A. Plonka, Time-Dependent Reactivity of Species inCondensed Media, Lecture Notes in Chemistry, vol.40, Berlin: Springer, 1986.[2]V. Reddy et al., “Impact of negative bias temperatureinstability on digital circuit reliability,” Microelectronics Reliability, vol. 45, no. 1, pp. 31–38, 2005.[3]O. Penzin et al., “M OSFET Degradation Kinetics and ItsSimulation,” IEEE T r ansactions on Elect r on Devices, vol.50, no. 6, pp. 1445–1450, 2003.。

comsol_涡流模块

----------Induction Currents from CircularCoilsIntroductionA time-varying current induces a varying magnetic field. This field induces currents in neighboring conductors. The induced currents are called eddy currents. The following model illustrates this phenomenon by a time-harmonic field simulation as well as a transient analysis, which provides a study of the eddy currents resulting from switching on the source.Two current-carrying coils are placed above a copper plate. They are surrounded by air, and there is a small air gap between the coils and the metal plate. A potential difference provides the external source. To obtain the total current density in the coils you must take the induced currents into account. The time-harmonic case shows the skin effect, that is, that the current density is high close to the surface and decreases rapidly inside the conductor.Model DefinitionE Q U A T I O NTo solve the problem, use a quasi-static equation for the magnetic potential A :σ-∂--A ---- + ∇ × (μ–1μ–1∇ × A ) = σV coi -l∂t0 r 2πrcoilHere μ0 is the permeability of vacuum, μr the relative permeability, σ the electric conductivity, and V coil the voltage over one turn in the coil. In the time-harmonic case the equation reduces to–1 –1V= ----------- j ωσA + ∇ × (μ0 μr ∇ × A ) σ 2πrF O R C E SThe total electromagnetic force acting on region of space Ω can beobtained by integrating Maxwe ll’s stress tensor on the delimiting boundary ∂Ω:F =T n dS∂ΩThe Force Calculation feature automatically performs the integral along the boundaries of the desired region, considering also the axisymmetric geometry of the problem. The computed force will be available in results processing as a global variable.Results andDiscussionIn the time-harmonic regime, the varying magnetic field induces electrical currents in the metallic plate. The currents, in turn, act as sources of an opposing magnetic field “shiel d ing” the plate from the magnetic field. As a result of this phenomenon, the region in which electrical currents are generated is confined in proximity of the surface and reduces in size with increasing frequency. Figure 1 and Figure 2 show the induced current density at 10 Hz and 300 Hz, respectively.In this model, a time-domain study is performed to investigate the step response of the system. Figure 3 displays a snapshot of the induced current density and magnetic flux density for the transient solution in a combined surface and arrow plot.Finally, Figure 4 shows the total axial force between the coils and the plate as a function of time computed by the Force Calculation feature. For the chosen current direction, the force is repulsive(negative).Figure 1: The ϕcomponent of the induced current density for the time-harmonic solution plotted together with a contour plot of the magnetic vector potential at a frequency of10 Hz.Figure 2: Plot of the same quantities at a frequency of 300 Hz.Figure 3: Snapshot of the induced current density (surface plot) and the magnetic flux density (arrow plot) during the transient study.Model Library path:ACDC_Module/Inductive_Devices_and_Coils/coil_above_plateModeling Instructions—Frequency DomainFrom the File menu, choose New.N E W1 In the New window, click the Model Wizard button.M O D E L W I Z A R D1In the Model Wizard window, click the 2D Axisymmetric button. 2In the Select physics tree, select AC/DC>Magnetic Fields (mf). 3Click the Add button.4Click the Study button.5In the tree, select Preset Studies>Frequency Domain.6Click the Done button.G E O M E T R Y 1Square 11In the Model Builder window, under Component 1 right-click Geometry 1 and choose Square.2In the Square settings window, locate the Size section.3In the Side length edit field, type .4Locate the Position section. In the z edit field, type .Rectangle 11In the Model Builder window, right-click Geometry 1 and choose Rectangle.2In the Rectangle settings window, locate the Size section.3In the Width edit field, type .4In the Height edit field, type .5Locate the Position section. In the z edit field, type .Circle 11Right-click Geometry 1 and choose Circle.2In the Circle settings window, locate the Size and Shape section.3In the Radius edit field, type .4Locate the Position section. In the r edit field, type .5In the z edit field, type .Circle 21Right-click Geometry 1 and choose Circle.2In the Circle settings window, locate the Size and Shape section.3In the Radius edit field, type .4Locate the Position section. In the r edit field, type .5In the z edit field, type .6Click the Build All Objectsbutton.The geometry is nowcomplete.Next, add the materials relevant to the model.M A T E R I A L SOn the Home toolbar, click Add Material.A D D M A T E R I A L1Go to the Add Material window.2In the tree, select Built-In>Air.3In the Add Material window, click Add to Component. M A T E R I A L SA D D M A T E R I A L1Go to the Add Material window.2In the tree, select Built-In>Copper.3In the Add Material window, click Add to Component. 4Close the Add Material window.M A T E R I A L SCopper1In the Model Builder window, under Component 1>Materials click Copper.2Select Domains 2–4 only.M A G N E T I C F I E L D SSingle-Turn Coil 11On the Physics toolbar, click Domains and choose Single-Turn Coil.2Select Domains 3 and 4 only.3In the Single-Turn Coil settings window, locate the Single-Turn Coil section. 4From the Coil excitation list, choose Voltage.5In the V coil edit field, type [mV].With this setting, the Single-Turn Coil feature applies a loopvoltage of mV to each of the coil loops.Now, add a Force Calculation feature that computes the total force acting on the plate.Force Calculation 11On the Physics toolbar, click Domains and choose Force Calculation.2Select Domain 2 only.3In the Force Calculation settings window, locate the Force Calculation section. 4In the Force name edit field, type plate.S T U D Y 1Step 1: Frequency Domain1In the Model Builder window, under Study 1 click Step 1: Frequency Domain.2In the Frequency Domain settings window, locate the Study Settings section.3In the Frequencies edit field, type10[Hz],100[Hz],300[Hz].Disable the automatic plotgeneration.4In the Model Builder window, click Study 1.5In the Study settings window, locate the Study Settings section.6Clear the Generate default plots check box.7On the Study toolbar, click Compute.When the solution process is completed, create plot groups to visualize the results.R E S U L T S2D Plot Group 11On the Results toolbar, click 2D Plot Group.2On the 2D Plot Group 1 toolbar, click Surface.3In the Surface settings window, click Replace Expression in the upper-right corner of the Expression section. From the menu, choose Magnetic Fields>Currents and charge>Induced current density>Induced current density, phi component .Add a contour plot to show the field lines of the magnetic flux density. In axial symmetry, those lines can be obtained by plotting the isolines of the magnetic vector potential multiplied by the radial coordinate, r.4On the 2D Plot Group 1 toolbar, click Contour.5In the Contour settings window, locate the Expression section.6In the Expression edit field, type Aphi*r.7In the Model Builder window, click 2D Plot Group 1.8In the 2D Plot Group settings window, locate the Data section.9From the Parameter value (freq) list, choose 10.10On the 2D Plot Group 1 toolbar, click Plot.The plot shows the induced current density in the plate. Plottingthe other solutions shows how the region in which the currents are induced decreases with increasing frequency.11From the Parameter value (freq) list, choose 100, then click Plot.12From the Parameter value (freq) list, choose 300, then click Plot. Transient AnalysisTo set up a time-dependent study to investigate the step response of the system requires only a few additional steps. The Initial Values feature automatically included in the Magnetic Fields interface specifies the initial value for the magnetic vector potential, defaulted to zero. At the beginning of the transient simulation (t = 0), amV voltage is applied to the coil. This corresponds to excitingfrom an unexcited state the system with a step function.1 On the Study toolbar, click Add Study.A D D S T U D Y1Go to the Add Study window.2Find the Studies subsection. In the tree, select Preset Studies>Time Dependent. 3In the Add study window, click Add Study.4Close the Add Study window.S T U D Y 2Step 1: Time Dependent1In the Model Builder window, under Study 2 click Step 1: Time Dependent.2In the Time Dependent settings window, locate the Study Settings section.3In the Times edit field, type 0,10^(range(-4,1/3,-1)).4Select the Relative tolerance check box.5In the associated edit field, type .6In the Model Builder window, click Study 2.7In the Study settings window, locate the Study Settings section.8Clear the Generate default plots check box.9On the Study toolbar, click Compute.R E S U L T S2D Plot Group 21On the Results toolbar, click 2D Plot Group.2In the 2D Plot Group settings window, locate the Data section.3From the Data set list, choose Solution 2.4From the Time (s) list, choose .5On the 2D Plot Group 2 toolbar, click Surface.6In the Surface settings window, click Replace Expression in the upper-right corner of the Expression section. From the menu, choose MagneticFields>Currents and charge>Induced current density>Induced current density,phi component .7In the Model Builder window, right-click 2D Plot Group 2 and choose Arrow Surface. 8In the Arrow Surface settings window, locate the Arrow Positioning section.9Find the r grid points subsection. In the Points edit field, type 50.10Find the z grid points subsection. In the Points edit field, type 50.11Locate the Coloring and Style section. From the Color list, choose White.12On the 2D Plot Group 2 toolbar, click Plot.The Force Calculation feature automatically computed the totalforce acting on the plate and created a global variable that canbe plotted as a function of time.1D Plot Group 31On the Results toolbar, click 1D Plot Group.2In the 1D Plot Group settings window, locate the Data section.3From the Data set list, choose Solution 2.4Click to expand the Legend section. From the Position list, choose Lower right.5On the 1D Plot Group 3 toolbar, click Global.6In the Global settings window, click Replace Expression in the upper-right corner of the y-axis data section. From the menu, chooseMagnetic Fields>Mechanical>Electromagnetic force>Electromagnetic force, zcomponent.7On the 1D Plot Group 3 toolbar, click Plot.The plot shows that a repulsive force acts on the plate during the transient.The following instructions explain how to use a Revolved data set toData Sets1On the Results toolbar, click More Data Sets and choose Solution.2In the Model Builder window, under Results>Data Sets right-click Solution 3 and choose Add Selection.3In the Selection settings window, locate the Geometric Entity Selection section. 4From the Geometric entity level list, choose Domain.5Select Domains 2–4 only.6On the Results toolbar, click More Data Sets and choose Revolution 2D.7In the Revolution 2D settings window, locate the Data section.8From the Data set list, choose Solution 3.9Click to expand the Revolution layers section. Locate the Revolution Layers section. In the Start angle edit field, type -90.10In the Revolution angle edit field, type 255.3D Plot Group 41On the Results toolbar, click 3D Plot Group.2On the 3D Plot Group 4 toolbar, click Surface.3In the Surface settings window, click Replace Expression in the upper-right corner of the Expression section. From the menu, choose MagneticFields>Currents and charge>Induced current density>Induced current density,phi component .4In the Model Builder window, click 3D Plot Group 4.5In the 3D Plot Group settings window, locate the Data section.6From the Parameter value (freq) list, choose 10.7On the 1D Plot Group 4 toolbar, click Plot.8Click the Zoom In button on the Graphics toolbar.。

有限源瞬变电磁法正演模拟研究

有限源瞬变电磁法正演模拟研究胡代明;郝晋荣;苏本玉【摘要】针对现有物探工作人员施工效率低、瞬变电磁法资料解释能力有限的问题,以中心回线有限源激发的磁源为例,研究了基于COMSOL MULTIPHYSICS瞬变电磁法不同物理模型的正演过程。

并通过对比分析数值解与理论解,验证了使用COMSOL MULTIPHYSICS进行瞬变电磁法正演的可行性。

结合模型实例,给出基本建模思路和操作技术,方便快捷地模拟出了低阻球体周围磁场的空间分布规律,分析不同埋深低阻层的归一化感应电动势曲线,并验证了电磁波在地下空间中的传播规律。

这为野外矿井生产与工程勘探提供一定的理论指导依据,结合反演理论,有助于方便实时解释异常体的位置和规模。

COMSOL MULTIPHYSICS丰富的后处理功能使得结果直观、形象,将为工作人员提供良好的正演环境。

【期刊名称】《能源与环保》【年(卷),期】2017(039)002【总页数】5页(P36-39,45)【关键词】中心回线瞬变电磁法 COMSOL MULTIPHYSICS 数值解正演模拟【作者】胡代明;郝晋荣;苏本玉【作者单位】[1]中国科学技术大学地球和空间科学学院,安徽合肥230026;[2]中国矿业大学资源与地球科学学院,江苏徐州221116【正文语种】中文【中图分类】P631.325瞬变电磁法是电磁法分支中比较先进的地球物理勘探方法。

在20世纪50年代，原苏联地球物理学家完成了一维瞬变电磁正演的理论推导；70年代，一大批西方学者开始尝试二维、三维正演模拟研究；Sanfilipo和Hohmann学者首次通过时域积分方程法进行三维正演数值模拟[1-2]；Newman和Hohmann学者先得到电磁场频率域响应，再用余弦变换求得瞬变电磁场时间域响应[3-4]；Endo和Noguchi通过算法，利用坐标变换方法将物理域转换至求解域，解决了带地形模型的三维正演[5]；2003年，王华军利用有限单元法实现 2.5维瞬变电磁法正演模拟[6]；2006年，熊彬实现了电导率均匀分块的2.5维有限元模拟[7]；2011年，李建慧博士采用矢量有限元法进行中心回线瞬变电磁场的数值模拟[8]。

冲击响应谱在卫星运输冲击响应分析中的应用

Vol. 41, No. 2航天器环境工程第 41 卷第 2 期138SPACECRAFT ENVIRONMENT ENGINEERING2024 年 4 月https:// E-mail: ***************Tel: (010)68116407, 68116408, 68116544冲击响应谱在卫星运输冲击响应分析中的应用陈夜，冯彦军，郑鸣轩，顾莉莉，周徐斌（上海卫星工程研究所，上海 201109）摘要：卫星运输过程中的动力学环境存在一定的随机性与不确定性，给卫星的安全运输带来隐患。

目前工程上尚未形成通用化的卫星运输仿真方法，也未制定指导性的运输分析力学环境条件。

文章提取卫星运输过程中经常出现的2种典型斜坡形式的冲击信号，基于ABAQUS软件建立卫星与运输支撑工装的有限元模型，分别开展了瞬态响应与冲击响应谱分析。

结果表明，相比于瞬态响应分析，冲击响应谱分析节约了95%的运算量，且分析偏差在17%以内，并能够实现对响应最大情况的包络，可更好地满足工程上对仿真分析快速且准确的需求。

关键词：卫星运输；动力学环境；冲击响应；仿真分析；有限元建模中图分类号：V414.3+3文献标志码：A文章编号：1673-1379(2024)02-0138-06 DOI: 10.12126/see.2023143Application of shock response spectrum in analysis ofsatellite transportation shock responseCHEN Ye, FENG Yanjun, ZHENG Mingxuan, GU Lili, ZHOU Xubin(Shanghai Institute of Satellite Engineering, Shanghai 201109, China)Abstract: The dynamics environment during satellite transportation exhibits some randomness and uncertainty, which may bring hidden troubles to the safety of satellite transportation. At present, there is neither universal satellite transportation simulation method in engineering nor guiding mechanical environmental conditions for transportation analysis. In this paper, two typical ramp shock signals that can often be caught during satellite transportation were extracted, and finite element model of satellite and its support structure for transportation was established based on ABAQUS software. The analyses of transient response and shock response spectrum (SRS) were conducted respectively. The results show that, compared with transient response analysis, SRS analysis saves 95% of the computing load with a deviation of not more than 17%, as well as implements an envelop for the maximum stress response, indicating that SRS analysis may better meet the demand of fast and accurate simulation in satellite engineering practice.Keywords: satellite transportation; dynamics environment; shock response; simulation analysis; finite element modeling收稿日期：2023-09-12；修回日期：2024-03-17基金项目：上海市科技计划项目之扬帆专项资助项目（编号：23YF1444800）引用格式：陈夜, 冯彦军, 郑鸣轩, 等. 冲击响应谱在卫星运输冲击响应分析中的应用[J]. 航天器环境工程, 2024, 41(2): 138-143CHEN Y, FENG Y J, ZHENG M X, et al. Application of shock response spectrum in analysis of satellite transportation shock response[J]. Spacecraft Environment Engineering, 2024, 41(2): 138-1430 引言卫星在研制周期中经历吊装、试验、运输及发射等过程，需要承受多种形式力学环境的考验。

半导体器件的高功率微波毁伤阈值数值计算研究(信号与信息处理专业优秀论文)

ＨＰＭ的电压对器件破坏影响的动态过程，及ＰＮ结对ＨＰＭ响应的截止频率参数
｛。
本文研究途径及模拟方法为下一步ＰＮ结器件的二维模拟及试验数据的理论
分析与论证奠定了基础。
．
关键字：高功率微波一维瞬态过程模拟Ｆ１ｅｘＰＤＥ
电子科技大学硕士论文
ＡＢＳＴＲＡＣＴ
ＳｔｕｄｙｉｎｇｂｕｒｎｏｕｔｍｅｃｈａｎｉｓｍｏｆＨＰＭｔａｎａｌｙｚｉｎｇｔｈｅｓｅｍｉｃｏｎｄｕｃｔｏｒ’ＳｒｅｐｒｅｓｅｎｔａｔｉｖｅｅｆｆｅｃｔｏｆＨＰＭ，ｅｖａｌｕａｔｉｎｇｉｍｐａｃｔｏｆＨＰＭ，ｓｕｐｐｌｙｉｎｇｔｈｅｂａｓｉｓｆｏｒｄｅｓｉｇｎａｎｄｒｅｓｅａｒｃｈｏｆＨｉｇｈＰｏｗｅｒｅｑｕｉｐｍｅｎｔ．Ｔｏｉｍｐｒｏｖｅｅｌｅｃｔｒｏｎｃｏｎｆｒｏｎｔｌｅｖｅｌ，ｅｓｐｅｃｉａｌｌｙｒａｄａｒｌｅｖｅｌｉｓｉｍｐｏｒｔａｎｔ．
（保密的学位论文在解密后应遵守此规定）
签名：主１毅一ｚ
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日期：。呻年￥月ｑ日
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知识水坝@pologoogle为您整理
电子科技大学硕士论文
第一章绪论
１．１论文的背景及研究意义
定向能武器是利用沿一定方向发射与传播的高能电磁波射束以光速攻击目标的一种新机理武器，它包括高功率微波武器、高能激光武器和粒子柬武器。定向能武器的攻击目标隐蔽、杀伤力强、既可用于防御、又可用于进攻。因此，它将成为未来信息化战场上对飞机、舰艇、坦克导弹乃至卫星等高价目标的重要武器系统。
签名：立４ｊ矮二—一日期：ｐ悻芦月圹日
关于论文使用授权的说明
本学位论文作者完全了解电子科技大学有关保留、使用学位论文的规定，有权保留并向国家有关部门或机构送交论文的复印件和磁盘，允许论文被查阅和借阅。本人授权电子科技大学可以将学位论文的全部或部分内容编入有关数据库进行检索，可以采用影印、缩印或扫描等复制手段保存、汇编学位论文。

Trnsys中文教程-第一册

Trnsys中⽂教程-第⼀册TRNSYS 18 A TraN sient Sy stem S imulation program第1卷Volume 1⼊门Getting Started⽬录。

TABLE OF CONTENTS1.开始1–5。

1. GETTING STARTED 1–51.1.本⼿册是什么？1—5。

1.1. What is this manual? 1–51.2.什么是trnsys？1—5。

1.2. What is TRNSYS? 1–51.3.Trnsys是如何⼯作的？1—5。

1.3. How does TRNSYS work? 1–51.4.组件模型如何⼯作？1—6。

1.4. How do the component models work? 1–61.5.trnsys包中有哪些不同的程序？1—6。

1.5. What are the various programs in the TRNSYS package? 1–61.6.如何将组件模型添加到trnsys？1—8。

1.6. How are component models added to TRNSYS? 1–81.7.TRNSYS⽂档集中包括哪些不同的⼿册？1—8。

1.7. What are the different manuals included in the TRNSYS documentation set? 1–81.⼊门。

GETTING STARTED1.1. 这本⼿册是什么？ What is this manual?《⼊门⼿册》的⽬的是解释trnsys如何⼯作以及组成trnsys包的不同⼯具背后的⼀些基本概念。

⼀旦你对这些基本概念有了了解，你就可以移动到⽂档集的其他卷上，这些⽂档集提供了关于使⽤TrnSyS的不同⼯具和教程的详细信息。

但在继续学习教程之前，理解本⼿册中包含的概念⾮常重要。

The intent of the Getting Started manual is to explain some of the basics concepts behind how TRNSYS works and the different tools that make up the TRNSYS package. Once you have an understanding of these basic concepts you can move to the other volumes of the documentation set that provide detailed information on the different tools and tutorials on the use of TRNSYS. But it is very important to understand the concepts included in this manual before proceeding with tutorials.1.2. 什么是trnsys？ What is TRNSYS?trnsys是⼀个完整的、可扩展的系统暂态仿真环境，包括多区域建筑。

用FDTD法求解传输线方程

用FDTD法求解传输线方程高方平;姚缨英;季苏蕾【摘要】We Transmission line circuit model, telegraph equations (a hyperbolic partial differential equations) , is the starting point of analyzing transmission lines transient process. A simple and quick and effective numerical solution in time domain has been deduced by the aid of circuit theory and computational mathematics and program design. The partial differential equation group has been discretized with the theory of FDTD solution, therefore a bran-new differential computation formation has been obtained. Furthermore, boundary conditions of the basic lumped equivalent circuit mode have been found according to constraints between voltage and current at the ends of lines. Finally voltage and current waveforms has been obtained by simulation. Matlab is used for the simulation of the transient of transmission line under various boundary conditions, various coupling conditions. Simulation results from Matlab are compared with waveforms by the EMTP-ATP simulation software, the efficient of the method is proved.%传输线的电路模型—电报方程(一阶双曲型偏微分方程组)是分析传输线暂态过程的出发点.借助电路理论、计算数学、程序设计等知识推导出一种简单、快速、有效的时域数值解法.利用有限时域差分理论对偏微分方程组进行离散,得到一种全新的差分计算格式,并根据电压、电流在始端、终端上的约束关系,运用传输线集中参数的等效模型确定边界条件；最后仿真计算得到响应波形.并对传输线在不同边界条件、传输线耦合等情况下的暂态过程进行MATLAB编程计算得到仿真波形.并将其仿真波形与EMTP-ATP软件仿真得到的波形进行对比,验证了此方法的可行性.【期刊名称】《华北电力大学学报(自然科学版)》【年(卷),期】2012(039)002【总页数】5页(P12-16)【关键词】电路理论;传输线方程;时域有限差分法;传输线暂态过程;数值解【作者】高方平;姚缨英;季苏蕾【作者单位】浙江大学电气工程学院,浙江杭州310027;浙江大学电气工程学院,浙江杭州310027;浙江大学电气工程学院,浙江杭州310027【正文语种】中文【中图分类】TM720 引言在高压远距离交流电力线路、高频信号电信线路中，在同一瞬间沿线的电压、电流都不相同，必须作为分布参数处理。

7.2动态电路分析MULTISIM

瞬态分析（Transient Analysis）
设置初始条件设置分析时间设置计算步长
例 1 观察下图所示RC电路的零输入响应uc(t)，已知 uc(0+)=10V。
关键：
1. 设置电容元的初值 2. 设置分析时间
1. 设置电容元的初值
1）所选用的电容为现实电容 2）所选用的电容为虚拟电容
2. 设置分析时间
参数扫描方式（Parameter Sweep ）
选择扫描的元件和参数
选择扫描方式选择分析类型
设置分析参数
教材例5－3－4的重新验证
V1
1
2
20 V
R1 10k
3
R2
J1
1k
Key = Space
5
C1 1uF
0
4
C2 4uF
XSC1
G T
A
B
见7_2_4ppt.msm
0
R1
2
1
L2 1H
例 3 在RLC串联电路中，已知L=10mH，R=51Ω，C=2uF，信号源输出频率为100Hz、幅值为5V的方波信号，利用示波器观察同时观察输入信号和电容电压的波形，此时电路处于何种状态？当R为多少时，电路处于临界阻尼状态？
关键：
1. 示波器与电路的连接 2. 设置示波器连线的颜色 3. 设置示波器面板的各刻度
见7_2_3ppt.msm
在响应波形中有振荡现象，电路处于欠阻尼状态
临界电阻：
R0 2
10 103 2 106
141
当R<R0时，电路处于欠阻尼状态当R=R0时，电路处于临界阻尼状态当R>R0时，电路处于过阻尼状态
若需要同时观察三种状态，可采用 “参数扫描方式（Parameter Sweep ）”

车辆横摆角速度影响因素研究

前言
车辆在行驶中的转向瞬态响应是评价车辆操纵稳定性的一项重要内容[1]。驾驶过程中，驾驶员大部分时间处于瞬态操纵中，研究瞬态响应的影响因素对于车辆操纵稳定性的研究具有重要意义。通常通过角阶跃及角脉冲工况下的横摆角速度进行瞬态响应描述，其中角脉冲工况下的横摆角速度指标主要是从频率域对车辆瞬态转向进行评价。详细的指标包括横摆角速度增益、横摆角速度谐振峰水平、横摆角速度谐振频率、横摆角速度 1.0Hz 下的相位差等。
Abstract: The yaw rate is an important indicator to describe the vehicle's transient response. Through theoretical analysis of the factors affecting the yaw rate of the vehicle under diagonal pulse conditions, five parameters of damping coefficient, tire cornering stiffness, toe angle slope, suspension roll angle stiffness and relaxation length are selected. Then modeling and simulation analysis through Carsim software. Simulation results show that tire cornering stiffness is most pronounced for vehicle transient response, and toe angle slope, suspension roll angle stiffness also have a certain influence on the yaw rate. The above provides a reference for improving the transient response of the vehicle in the design of the vehicle chassis. Keywords: Yaw rate; Tire cornering stiffness; Toe angle slope; Suspension roll angle stiffness CLC NO.: U462 Document Code: A Article ID: 1671-7988(2019)19-60-04

汽车仪表板敲击异响仿真分析及优化

10.16638/ki.1671-7988.2020.09.060汽车仪表板敲击异响仿真分析及优化王亚超，郝耀东，李琦，宋睿（中汽研（天津）汽车工程研究院有限公司，天津300300）摘要：在汽车异响问题中，内饰件异响占50%以上，其中仪表板异响问题约占汽车异响的25%左右。

文章利用HyperMesh的SNRD模块，结合瞬态响应分析方法对仪表板进行敲击异响分析。

根据分析结果，利用HyperStudy 的DOE方法，验证了异响边界相对位移与卡扣的相关性，并对仪表板的主驾下饰板进行了优化。

文章预测了仪表板敲击异响发生的风险，为后期的敲击异响试验提供了参考，通过结构优化，消除了仪表板的一部分敲击异响问题。

关键词：仪表板；敲击异响；仿真分析；相对位移；相关性中图分类号：U463.83+7 文献标识码：A 文章编号：1671-7988(2020)09-202-04Simulation Analysis and Optimization of Rattle of Automobile Instrument PanelWang Yachao, Hao Yaodong, Li Qi, Song Rui（CATARC（Tianjin）Automotive Engineering Research Institute Co., Ltd, Tianjin 300300）Abstract: In the problem of automobile BSR, the interior parts BSR accounts for more than 50%, and the instrument panel BSR accounts for about 25% of the automobile BSR. The SNRD module of HyperMesh and the transient response analysis method are used to analyze the rattle of the instrument panel in this paper. According to the analysis results, using the DOE method of HyperStudy, the correlation between the relative displacement of the BSR boundary and the buckle is verified, and the trim panel under the driver's side of the instrument panel is optimized. In this paper, the risk of the instrument panel rattle is predicted, which provides a reference for the later rattle test. Through structural optimization, some rattle problems of the instrument panel are eliminated.Keywords: Instrument panel; Rattle; Simulation analysis; Relative displacement; CorrelationCLC NO.: U463.83+7 Document Code: A Article ID: 1671-7988(2020)09-202-04前言随着汽车技术的提高，顾客对汽车舒适性的要求也越来越高，NVH性能是衡量汽车舒适性的重要指标，汽车异响也成为了影响汽车质量的重要因素。

ROHM Solution Simulator用户指南说明书

User’s GuideROHM Solution SimulatorLow Noise, Low Input Offset Voltage CMOS Operational Amplifiers (Op Amps)Non-inverting Amplifier (Sine Wave Input) – Transient Response simulationThis circuit simulates the transient response to sine wave input with non-inverting amplifier configured Op Amps. You can observe the output voltage and how faithfully the sine wave input voltage is reproduced. You can customize the parameters of the components shown in blue, such as VSOURCE, or peripheral components, and simulate the non-inverting amplifier with the desired operating condition.You can simulate the circuit in the published application note: Operational amplifier, Comparator (Tutorial). [JP ] [EN ] [CN ] [KR ]General CautionsCaution 1: The values from the simulation results are not guaranteed. Please use these results as a guide for your design. Caution 2: These model characteristics are specifically at Ta=25°C. Thus, the simulation result with temperature variancesmay significantly differ from the result with the one done at actual application board (actual measurement).Caution 3: Please refer to the Application note of Op Amps for details of the technical information.Caution 4: The characteristics may change depending on the actual board design and ROHM strongly recommend todouble check those characteristics with actual board where the chips will be mounted on.1 Simulation SchematicFigure 1. Simulation Schematic2 How to simulateThe simulation settings, such as parameter sweep or convergence options, are configurable from the ‘Simulation Settings’ shown in Figure 2, and Table 1 shows the default setup of the simulation.In case of simulation convergence issue, you can change advanced options to solve. Nothing is stated in the d efault statement in ‘Manual Options’. You can modify it.Figure 2. Simulation Settings and executionTable 1. Simulation settings default setup Parameters DefaultNoteSimulation TypeTime-Domain Do not change Simulation Type End Time300µs - Advanced options Balanced- Time Resolution EnhancementConvergence Assist- Manual Options --SimulationSettingsSimulateVDDVSOURCE VINVOVREF3Simulation ConditionsTable 2. List of the simulation condition parametersInstanceNameType ParametersDefaultValue Variable Range Units Min Max VSOURCE Voltage Source Frequency 10k 10 10M Hz Peak_voltage 0.5 0 5.5V Initial_phase0 free ° DC_offset2.5 0 5.5V DF0.0 fixed 1/s AC_magnitude 0.0 fixed V AC_phase 0.0 fixed ° VDD Voltage SourceFor Op AmpVoltage_level5 2.5(Note1) 5.5(Note1)V AC_magnitude0.0 fixed V AC_phase 0.0 fixed ° VREF Voltage Source Voltage_level2.5 VSS VDDV AC_magnitude0.0 fixed V AC_phase0.0fixed°(Note 1) Set it to the guaranteed operating range of the Op Amps.3.1 VSOURCE parameter setupFigure 3 shows how the VSOURCE parameters correspond to the VIN stimulus waveform.Figure 3. VSOURCE parameters and its waveform4 Op Amp modelTable 3 shows the model terminal function implemented. Note that LMR1802G-LB is the behavior model for its input/output characteristics, and no protection circuits or the functions not related to the purpose are not implemented.Table 3. LMR1802G-LB model terminals used for the simulationTerminals Description+INNon-inverting input -INInverting input VDDPositive power supply VSSNegative power supply / Ground OUTOutput(Note 2) This model is not compatible with the influence of ambient temperature.(Note 3) Use the simulation results only as a design guide and the data reported herein is not a guaranteed value.Initial_phaseDC_offsetPeak_voltage1/FrequencyVOVIN5 Peripheral Components5.1 Bill of MaterialTable 4 shows the list of components used in the simulation schematic. Each of the capacitors has the parameters of equivalent circuit shown below. The default values of equivalent components are set to zero except for the ESR ofC. You can modify the values of each component.Table 4. List of capacitors used in the simulation circuitType Instance Name Default Value Variable RangeUnits Min MaxResistor R2_1 10k 1k 1M ΩR2_2 10k 1k 1M ΩRL2 10k 1k 1M, NC ΩCapacitor C2_1 33 22 100 pF CL2 10 free, NC pF5.2 Capacitor Equivalent Circuits(a) Property editor (b) Equivalent circuitFigure 4. Capacitor property editor and equivalent circuitThe default value of ESR is 0.01Ω.(Note 4) These parameters can take any positive value or zero in simulation but it does not guarantee the operation of the IC in any condition. Refer to the datasheet to determine adequate value of parameters.6 Recommended Products6.1 Op AmpLMR1802G-LB : Low Noise, Low Input Offset Voltage CMOS Operational Amplifier. [JP] [EN] [CN] [KR] [TW] [DE] Technical Articles and Tools can be found in the Design Resources on the product web page.NoticeROHM Customer Support Systemhttps:///contact/Thank you for your accessing to ROHM product informations.More detail product informations and catalogs are available, please contact us.N o t e sThe information contained herein is subject to change without notice.Before you use our Products, please contact our sales representative and verify the latest specifica-tions :Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.Examples of application circuits, circuit constants and any other information contained herein areprovided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.The technical information specified herein is intended only to show the typical functions of andexamples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.The Products specified in this document are not designed to be radiation tolerant.For use of our Products in applications requiring a high degree of reliability (as exemplifiedbelow), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems.Do not use our Products in applications requiring extremely high reliability, such as aerospaceequipment, nuclear power control systems, and submarine repeaters.ROHM shall have no responsibility for any damages or injury arising from non-compliance withthe recommended usage conditions and specifications contained herein.ROHM has used reasonable care to ensur e the accuracy of the information contained in thisdocument. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.Please use the Products in accordance with any applicable environmental laws and regulations,such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.W hen providing our Products and technologies contained in this document to other countries,you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.This document, in part or in whole, may not be reprinted or reproduced without prior consent ofROHM.1) 2)3)4)5)6)7)8)9)10)11)12)13)。

Simulation分析

solutionsSolidWorks Flow SimulationSolidWorks Flow Simulation 是一款强大的计算流体力学 (CFD) 工具。

在那些液流、热传递和流体力间的交互作用决定设计成败的设计中，您可以使用该工具快速轻松地模拟这三种因素。

使用范围广泛的物理模型和功能：• 分析零部件内部的流动或零部件外部的流动，或者综合分析内部流动和外部流动。

• 结合流体分析和热分析，同时包括自然对流和强制对流、传导和辐射。

• 让 SolidWorks Flow Simulation 确定最佳尺寸或满足力、压差或速度等目标的入口和出口条件。

• 包含孔隙、气穴和湿度等复杂效果。

• 解决涉及非牛顿流体（例如，血液和塑料）的流动问题。

• 使用旋转坐标系模拟叶轮的旋转并研究流体在叶轮中如何流动。

充分利用现实操作条件的无限组合：• 应用入口速度、压力、质量流速或体积流速和风扇。

如果涉及多种流体，还可以应用质量比或体积比。

• 通过应用平面热源或体积热源、指定自然对流或强制对流或加入太阳辐射，模拟温度变化。

• 使用散热器模拟程序研究散热器对电子元件的影响。

• 跟踪流体中悬浮颗粒的行为。

• 应用随时间和坐标变化的边界条件和热源。

使用强大而且直观的结果可视化工具，获取有价值的分析信息：• 使用剖面图解研究结果数值的分布情况，包括速度、压力、漩涡、温度和质量比。

• 使用点参数工具测量任何位置的结果。

• 按照任何 SolidWorks 草图绘制不同的结果。

• 列出结果并自动将数据导出到 Microsoft ® Excel 。

• 使用动态显示条纹、3D 箭头、管道或球面，以分析模型内部或周围的流动轨迹。

SolidWorks ® Flow Simulation 为您模拟 SolidWorks 设计内部和外部的液流和热状态提供了无可比拟的便利性。

模拟多物理场的电子设计，以进行液流分析和热分析。

Si SOI微剂量探测器电荷收集特性数值模拟

Si SOI微剂量探测器电荷收集特性数值模拟唐杜;刘书焕;李永宏;贺朝会【期刊名称】《太赫兹科学与电子信息学报》【年(卷),期】2012(010)005【摘要】采用数值模拟软件TCAD对影响绝缘体上硅(SOI) PIN微剂量探测器灵敏区电荷收集特性的主要因素进行了模拟与分析.分析了3 MeVα粒子在PIN探测器内沉积能量产生的瞬时电流随探测器偏置电压(10 V至50 V)和掺杂浓度、粒子入射方向的变化.模拟结果表明,随着反偏电压的增大,载流子复合效应降低,瞬态电流增加；当n+区域反偏电压为10V时,由α粒子入射产生的空间电荷在1 ns内几乎全部被收集,电荷收集效率接近100％；辐射产生的瞬时电流随探测器各端掺杂浓度的增大而减小.%2D simulation of the main influence factors on the charge collection characteristics of Silicon On Insulator(SOI) PIN microdosimeter was performed with TCAD software. The transient current in the microdosimeter induced by 3 MeV alpha particle was calculated at different applied voltages(from 10 V to 50 V), doping concentrations and alpha incident directions. The simulation results show that the transient current increases with the increase of reverse bias voltage due to the decrease of the carrier recombination effect; and the space charges induced by alpha particle are almost collected in 1 ns with 10 V applied to the n+ region at the charge collection efficiency nearly 100%; and the transient current decrease when the doping concentration of each region increases.【总页数】5页(P616-620)【作者】唐杜;刘书焕;李永宏;贺朝会【作者单位】西安交通大学核科学技术学院,陕西西安710049;西安交通大学核科学技术学院,陕西西安710049;西安交通大学核科学技术学院,陕西西安710049;西安交通大学核科学技术学院,陕西西安710049【正文语种】中文【中图分类】TN34;TL814【相关文献】1.同轴高纯锗探测器探测效率的MCNP模拟与电荷收集时间的计算 [J], 梁爽;何高魁;郝晓勇2.4H-SiC肖特基二极管的电荷收集特性 [J], 吴健;雷家荣;蒋勇;陈雨;荣茹;范晓强3.平面型CdZnTe探测器电荷收集效率对能谱测量的影响 [J], 李杨;罗文芸;贾晓斌;张家磊;王林军4.CVD金刚石薄膜探测器对γ射线响应的电荷收集效率测量方法 [J], 雷岚;欧阳晓平;夏良斌;谭新建;张小东5.SOI硅微剂量探测器对中子和伽马辐射场线能谱测量的GEANT4模拟研究 [J], 雷鸣;刘书焕;宗鹏飞;刘兵因版权原因，仅展示原文概要，查看原文内容请购买。

TransientResponse：瞬态响应

GPFM115 Medical115 Watt Global Performance Switchers• 115 Watts of continuous power with forced air • Power factor corrected • 74-81% efficiency• Small package 3.3” x 5.25” x 1.5” inches • Power fail warning, remote sense • Optional cover with cooling fan• Medical Approval to UL2601-1, CSA-C22.2 No. 601.1, EN60601-1• RoHS Compliant Model Available (G suffix)FEATURES:D C P o w e r S u p p l i e sSL Power Electronics, Inc. 6050 King Drive, Bldg. A, Ventura, CA, 93003, USA. Phone:(805) 486 4565 Fax:(805) 487 89115/6/08. Data Sheet © 2008 SL Power Electronics, Inc. The information and specifications contained in this data sheet are believed to be correct at time of publication.However, SL Power accepts no responsibility for consequences arising from reproduction errors or inaccuracies. Specifications are subject to change without notice.A. Units should be allowed to warm up/operate under non-condensing conditions before application of power. Derate output current and total output power by 2.5% per °C above 50°C. For operation in a confined space, moving air may be required. Under all conditions, the cooling vs. load profile should be such that chassis temperatures do not exceed 90°C for extended periods.B. Shock testing—half-sinusoidal, 10 ± 3 ms duration, ± direction, 3 orthogonal axes, total 6 shocks.C. Random vibration—10 to 2000Hz, 6dB/octave roll-off from 350 to 2000Hz, 3 orthogonal axes. Tested for 10 min./axis operating and 1hr./axis non-operating.JI INPUT: (AMP P .C.B. HEADER P .N 640445-5)PIN 1) AC LINE PIN 2) = N/CPIN 3) = AC NEUTRAL PIN 4) = N/CPIN 5) = AC GROUNDSIGNALS: J2AMP P .C.B. HEADER P/N 640456-4MATING CONNECTOR P/N 640621-4PIN 1) POWER FAIL PIN 2) -SENSE PIN 3) +SENSE PIN 4) COMMONFAN: J4AMP P .C.B. HEADER P/N 640456-2MATING CONNECTOR P/N 640621-2PIN 1) -PIN 2) +OUTPUTCONNECTOR PIN.AMP P .C.B. HEADER P/N 640445-8PIN 1-4) +VoutPINS 5-8) RETURNOUTPUT-MATING CONNECTOR AMP P/N HOUSING 640250-8CONTACT 770476-1INPUT MATING CONNECTOR AMP P/N HOUSING 640250-5CONTACT 770476-1[2 MM], CHASSIS THICKNESS = 0.080” [2 MM]OPTIONAL COVER/FAN ASSEMBLYAVAILABLE P/N 09-115CFNotes:* Add “G” suffix to part number for RoHS compliant model.A. Maximum continuous current rating for unrestricted convection cooling.B. Maximum continuous current rating with 150 LFM air or cover option.C. Add “-C” after voltage in model number for cover with fan option.。

基于RT-LAB的柔性直流配电网建模与仿真分析

第43卷第19期电力系统保护与控制V ol.43 No.19 2015年10月1日Power System Protection and Control Oct. 1, 2015 基于RT-LAB的柔性直流配电网建模与仿真分析于亚男，金阳忻，江全元，徐习东(浙江大学电气工程学院，浙江杭州 310027)摘要：基于实时数字仿真系统RT-LAB建立典型“手拉手”拓扑，含分布式能源光伏、锂电池以及交直流负载的直流配电网实时仿真数学模型。

利用该模型对柔性直流配电系统的启停控制、指令控制等运行方式进行暂态响应特性仿真分析。

RT-LAB实时仿真技术显著增强柔性直流配电网系统仿真的时效性和实用性。

配网启动逻辑设计及软开关技术、逐级功率提升法的应用，有效减小了直流配电系统启动电流冲击及接入操作过电压。

系统建模满足直流配电系统运行要求，对其启动控制及运行工况的仿真分析，为柔性直流配电工程建设进一步研究提供参考。

关键词：柔性直流配电系统；RT-LAB；实时数字仿真；运行工况；启停控制RT-LAB based modeling and simulation analysis of flexible DC distribution networkYU Yanan, JIN Yangxin, JIANG Quanyuan, XU Xidong(College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China)Abstract: Based on the real-time digital simulation system RT-LAB, this paper establishes a typical mathematical simulation model of loop flexible DC distribution. The model includes photovoltaic, lithium batteries and AC/DC load.Simulation analysis of different running conditions transient response tests, such as start-stop control, command control, is made. RT-LAB significantly enhances flexible DC distribution simulation timeliness and practicability. Start-up logic design, soft-switching and progressive power upgrade method effectively reduce starting current and access operation over-voltage. It is proved that the model works well to meet the operational requirements, and the study about start-stop control and operation conditions can provide reference for further engineering construction.This work is supported by National High-tech R & D Program of China (No. 2013AA050104).Key words: flexible DC distribution network; RT-LAB; real-time digital simulation; running condition; start-stop control 中图分类号：TM743 文章编号：1674-3415(2015)19-0125-060 引言随着城市发展，用电负荷快速增加，分布式能源及储能大量并入配网，传统交流配电网在电能供应稳定性、高效性、经济性、扩展性等方面面临巨大挑战。

基于Matlab的SCR烟气脱硝仿真平台设计

第22卷第1期系统仿真学报© V ol. 22 No. 12010年1月 Journal of System Simulation Jan., 2010基于Matlab 的SCR 烟气脱硝仿真平台设计胡学聪，李柠，李少远，廖倩芳（上海交通大学自动系，上海 200240）摘要：以选择性催化还原（SCR ）法烟气脱硝系统为研究对象，在对其反应机理进行研究的基础上，建立SCR 脱硝的动力学模型，并利用Matlab 搭建SCR 脱硝过程的仿真平台。

平台能够对SCR 烟气脱硝基本过程进行仿真，并对实验数据加以综合分析。

在实验数据基础上进行软测量建立烟气脱硝模型，并应用模型实现脱硝过程控制。

关键词：选择性催化还原（SCR ）；机理模型；Matlab ；仿真平台中图分类号：TP391.9 文献标识码：A 文章编号：1004-731X (2010) 01-0071-04Development of Simulation PlatformBased on Matlab for SCR Flue Gas DenitrationHU Xue-cong, LI Ning, LI Shao-yuan, LIAO Qian-fang(Automation Department, Shanghai Jiaotong University, Shanghai 200240, China)Abstract: The object of study is the selectivity catalyzes deoxidation (SCR) flue gas denitration system. Based on the study of its reaction mechanism, the SCR dynamics model was then obtained, which was used to build the simulation platform in Matlab. The platform could simulate the basic process of SCR flue gas denitration, and then the data was comprehensively analyzed. Therefore, with the arranged data, soft-sensor methods were used to build the corresponding model, which was applied to realize the control of the SCR denitration process.Key words: selectivity catalyzes reduction (SCR); mechanism model; Matlab; simulation platform引言锅炉燃煤是大气污染物x NO （包括NO 和2NO 等）的重要来源之一。