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STF氧气阀门应用V1

STF氧气阀门应用V1

阀门 的连接 氧气专用 氧气专用阀门 阀门的连接
①氧气管道的连接,应采用焊接,但与设备、阀门连接可采 用法兰式、丝扣连接。丝扣连接片,应采用一氧化铅、水玻 璃或聚四氟乙烯薄膜作为填料,严禁用涂铅用的麻或棉丝, 或其他含油脂的材料。 ②氧气管道应有导除静电的接地装置。厂区管道可在管道分 岔处无分支管道每80~100m处以及进出车间建筑物处设一接 地装置。直接埋地管道可在埋地之前及出地后各接地一次; 车间内部管道,可与本车间的静电干线连接,接地电阻值应 符合规范。当每对法兰或螺纹接头间电阻值超过0.03Ω时, 应设跨接导线。对有阴板保护的管道,不应作接地。 ③氧气管道的弯头、分叉头,不应紧接安装在阀门的下游, 阀门的下游侧宜设长度不小于管外径5倍的直管段。
氧气阀气缓冲阀 介质:氧气,氮气。 温度:50-425度左右 压力:1.0-14.7Mpa 特点:禁油,脱脂,防静电 介质特点:易燃易爆,
氧气专用阀应用方案
/截止阀 /止回阀 阀门种类:高温金属硬密封球阀 高温金属硬密封球阀/ 截止阀/ 口径/压力等级: 1/2”-12” 1000LBS 温度:-45℃-480℃ 压力:150-1500LBS 介质:氧气、氮气、氢气、氩气、乙炔 阀体、阀盖:316/ Incoloy625 内件: Incoloy625/ Inconel625/Inconel800系列
STF氧气专用切断阀介绍
多种形式,有T型截止阀、球阀、止回阀,适用于各 种气体。 氧气阀门阀体选材最低304不锈钢,煤浆气化氧气阀 , 常用材料阀体Incoloy625 ,Inconel625 625, Inconel800系列,阀芯至少Incoloy625。 STF氧气阀从零部件加工开始,严格执行禁油程序, 静电导出设计,防火标准符合API一607的要求;组装 前作禁油处理,阀门在出厂前高温去油,用碱性脱脂 液进行脱脂。阻燃性好,导电性能好,传热快,结构紧 凑, 安全可靠 。

氪斯特W60Z系列电动货车技术指南说明书

氪斯特W60Z系列电动货车技术指南说明书

W60Z SERIES TECHNICAL GUIDE2W60Z DIMENSIONSCircled dimensions correspond to the line numbers on the tabulated chart inside the Technical Guide. Dimensions are in inches (millimeters).Right Angle Stacking Single Polyurethane Load Wheel (std.)3.25 x 6.5E q u a l I n t e r s e c t i n g R i g h t A n g l e A i s l e w i t h 48.0 (1,220) x 40.0 (1,015) p a l l e t 12111.0(25)27.0(686)32.6(828)9.1(230)1034.0(864)9812111.0(25)27.0(686)32.6(828)9.1(230)10Floor to Top of Battery Rollers6.8(173)49.1(1247)6.0 (152)34.7(882)42%3.6 (92)9.5(240)34.4 (874)Forks Lowered 7.0 (178)10.0 x 5.0 x 6.5PolyurethaneDrive TireForks Raised 11.7 (297)39%3.3(83)9.3(235)1398BATTERY SIZE DIMENSIONSNUMBER OF CELLS CELL SIZE PLATESPER CELLCAPACITYLENGTH WIDTH HEIGHT WEIGHT Ah (Kwh)in (mm)in (mm)in (mm)lbs (kg)12757225 (5.2)25.6 (651)8.8 (224)23.3 (592)536 (243)12857255 (6.0)25.5 (648)8.6 (219)23.3 (592)590 (269)127511375 (8.7)26.5 (674)13.0 (331)23.3 (592)825 (374)128511425 (9.9)26.1 (663)12.8 (326)23.3 (592)865 (392)3CERTIFICATION: Hyster lift trucks meet the design and construction requirements of B56.1-1969, per OSHA Section 1910.178(a)(2), and also comply with the B56.1 revision in effect at time of manufacture. Certification of compliance with the applicable ANSI standards appears on the lift truck.† NOTE: Performance specifications / ratings are for truck equipped as described under Standard Equipment in this technical guide. Performance specifications are affected by the condition of the vehicle and how it is equipped, as well as by the nature and condition of the operating area. Specifications are subject to change and the proposed application should be discussed with your authorized Hyster Company Dealer.Optional load wheels affect outside turning radius and right angle stacking aisles. Contact your dealer if these dimensions are critical.G E N E R A L1Manufacturer Hyster Company2Model W60Z 3Capacity, rated lb (kg)6,000 (2 700)4Voltage24D I M E N S I O N S5Nominal fork length in (mm)36.0 (915)42.0 (1 067)48.0 (1 219)6Width across forksin (mm)27.0 (685)7Chassis length, with 13.4” battery compartment in (mm)34.4 (874)8Overall length, with 13.4” battery compartment in (mm)70.2 (1 783)76.2 (1 935)82.2 (2 087)9Wheelbase, lowered with 13.4” battery compartment in (mm)53.8 (1 367)59.8 (1 519)65.8 (1 670)Wheelbase, raised with 13.4” battery compartment in (mm)49.1 (1 247)55.1 (1 400)61.1 (1 551)10Turning radius, lowered, with 13.4” battery compartmentin (mm)63.2 (1 605)69.2 (1 758)75.2 (1 910)Turning radius, raised, with 13.4” battery compartment in (mm)58.5 (1 485)64.5 (1 638)70.5 (1 790)11Right angle aisle stack, 13.4” batt. comp. w/ 40”x 48” pallet in (mm)71.2 (1 808)76.6 (1 946)82.1 (2 096)12Equal intersecting aisle, 13.4” batt. comp. w/ 40.0” wide pallet in (mm)56.5 (1 435)59.8 (1 519)62.9 (1 596)13Grade clearance, center wheelbase, raised with pallet%393431Grade clearance, forks first, raised with pallet %39Grade clearance, chassis first, raised with pallet %4214Overall lift height (TOF)in (mm)9.3 (236)15Overall fork lifting heightin (mm)6.0 (154)B A T T E R Y16Battery compartment size, 13.4” batt. compartment (L x W x H)*in 32.0 x 13.4 x 31.0Battery compartment size, 13.4” batt. compartment (L x W x H)*(mm)(812 x 340 x 787)18Battery weight, 13.4” batt. compartment, 24-Volt - minimumlb (kg)536 (243)Battery weight, 13.4” batt. compartment, 24-Volt - maximumlb (kg)865 (392)P E R F †19Travel speed, NL / RL mphmph (km/h) 3.7 (6.0) / 2.6 (4.2)20Lift / lower speed, w/ 13.4” batt. compartment, 24-Volt NLseconds 3.7 / 3.0Lift / lower speed, w/ 13.4” batt. compartment, 24-Volt RL seconds4.7 / 1.8W H L21Drive tire size (Rubber)in 10.0 x 5.0 x 6.522Load wheel size, Single (Polyurethane)in 3.25 x 6.523Weight, total approx. with 13.4” batt. compartment w/o batterylb (kg)987 (448)1,007 (457)1,022 (464)W60Z SPECIFICATIONS* Length is measured side to side of truck. Width is measured front to back on the truck.W60Z pallet trucks use SB175 red connector - 16.0” (406 mm) 1/0 gauge leads, B position.Number of plates for the industrial battery is 7 to 11, depending on the amp hour rating chosen.Maximum battery height with optional load backrest extension (LBE) and battery rollers is 23.3” (592 mm).The W60Z walkie pallet truck can utilize a battery with a maximum amp hour capacity of 510 Ah (11.9 kw).6.0(152)6.0(152)9.0(229)9.0(229)18.0 (457)48.0 + 0.125 (1,219 + 4) Fork Trucks OnlyR A N G E 39.875 t o 40.125(1,013t o 1,019)F o r k & P al l e t T r u c k sSlats - Minimum Width5.625 (143)GMA PALLET - STANDARD DIMENSIONSHyster Company P .O. Box 7006Greenville, North Carolina 27835-7006Part No. W60Z/TG 12/2016 Litho in U.S.A.All trucks shown with optional equipment. © 2016 Hyster Company. All rights reserved.Hyster, , and STRONG PARTNERS. TOUGH TRUCKS. and MONOTROL are registered trademarks in the United States and certain other jurisdictions. Hyster products are subject to change without notice.Visit us online at or call us at 1-800-HYSTER-1.。

Daikin 拆分式冷却系统产品数据手册说明书

Daikin 拆分式冷却系统产品数据手册说明书

Product DataSplit System Cooling4TTR6018J1000A Array 4TTR6024J1000B4TTR6030J1000A4TTR6036J1000A4TTR6042J1000A4TTR6048J1000A4TTR6049J1000A4TTR6060J1000B4TTR6061C1000BN o t e:“Graphics in this document are for representationonly.Actual model may differ in appearance.”April202022-1916-1J-E NProduct Specifications(a)Certified in accordance with the Unitary Air-conditioner equipment certification program which is based on AHRI standard210/240.(b)Calculated in accordance with N.E.C.Only use HACR circuit breakers or fuses.(c)Standard line lengths—60’,Standard lift—60’Suction and Liquid line.For Greater lengths and lifts refer to refrigerantpiping software Pub#32–3312–0*(*denotes latest revision).(d)25,30,35and50foot linesets available.For a complete listing of lineset options available from equipment or supply stores,refer to the Trane Residential and Light Commercial Product Handbook.P r o d u c t S p e c i f i c a t i o n s(a)210/240.(b)Calculated in accordance with N.E.C.Only use HACR circuit breakers or fuses.(c)Standard line lengths—60’,Standard lift—60’Suction and Liquid line.For Greater lengths and lifts refer to refrigerantpiping software Pub#32–3312–0*(*denotes latest revision).(d)25,30,35and50foot linesets available.For a complete listing of lineset options available from equipment or supply stores,refer to the Trane Residential and Light Commercial Product Handbook.P r o d u c t S p e c i f i c a t i o n s(a)Certified in accordance with the Unitary Air-conditioner equipment certification program which is based on AHRI standard210/240.(b)Calculated in accordance with N.E.C.Only use HACR circuit breakers or fuses.(c)Standard line lengths—60’,Standard lift—60’Suction and Liquid line.For Greater lengths and lifts refer to refrigerantpiping software Pub#32–3312–0*(*denotes latest revision).(d)25,30,35and50foot linesets available.For a complete listing of lineset options available from equipment or supply stores,refer to the Trane Residential and Light Commercial Product Handbook.Note:Rated in accordance with AHRI Standard270–2008Accessory Description and UsageA n t i-S h o r t C y c l e T i m e r—Solid state timing device that prevents compressor recycling untilfive(5)minutes have elapsed after satisfying call or power e in area withquestionable power delivery,commercial applications,long lineset,etc.E v a p o r a t i o n D e f r o s t C o n t r o l—SPST Temperature actuated switch that cycles the condenseroff as indoor coil reaches freeze-up ed for low ambient cooling to30°F with TXV.R u b b e r I s o l a t o r s—Five(5)large rubber donuts to isolate condensing unit from transmittingenergy into mounting frame or e on any application where sound transmission needs tobe minimized.H a r d S t a r t K i t—Start capacitor and relay to assist compressor motor e in areas withmarginal power supply,on long linesets,low ambient conditions,etc.E x t r e m e C o n d i t i o n M o u n t K i t—Bracket kits to securely mount condensing unit to a frame orpad without removing any e in areas with high winds,or on commercial roof tops,etc.A H R I S t a n d a r d C a p a c i t y R a t i n g C o n d i t i o n sAHRI Standard210/240Rating Conditions1.Cooling80°F DB,67°F WB air entering indoor coil,95°F DB air entering outdoor coil.2.High Temperature Heating47°F DB,43°F WB air entering outdoor coil,70°F DB air enteringindoor coil.3.Low Temperature Heating17°F DB air entering indoor coil.4.Rated indoor airflow for heating is the same as for cooling.A H R I S t a n d a r d270R a t i n g C o n d i t i o n s—(Noise rating numbers are determiend with the unit incooling operations.)Standard Noise Rating number is at95°F outdoor air.Model NomenclatureOutdoor Units3 = 134 = 145 = 15Schematic DiagramsFigure1.018—048ModelsD157362P08Figure2.049&061ModelsPRINTED FROM D158442P 02 S c h e m a t i c D i a g r a m sFigure 3.060ModelsS c h e m a t i c D i a g r a m sFigure 4.060ModelsS c h e m a t i c D i a g r a m sOutline DrawingMechanical Specification OptionsG e n e r a lThe outdoor condensing units are factory charged with the system charge required for theoutdoor condensing unit,ten(10)feet of tested connecting line,and the smallest rated indoorevaporative coil match.This unit is designed to operate at outdoor ambient temperatures as highas115°F.Cooling capacities are matched with a wide selection of air handlers and furnace coilsthat are AHRI certified.The unit is certified to UL1995.Exterior is designed for outdoorapplication.C a s i n gUnit casing is constructed of heavy gauge,galvanized steel and painted with a weather-resistantpowder paint finish.The corner panels are prepainted.All panels are subjected to our1,000hoursalt spray test.R e f r i g e r a n t C o n t r o l sRefrigeration system controls include condenser fan,compressor contactor and low and highpressure switches.A factory supplied,field installed liquid line drier is standard.C o m p r e s s o rThe compressor features internal over temperature and pressure protection.Other featuresinclude:Centrifugal oil pump and low vibration and noise.C o n d e n s e r C o i lThe outdoor coil provides low airflow resistance and efficient heat transfer.The coil is protectedon all four sides by louvered panels.L o w A m b i e n t C o o l i n gAs manufactured,this system has a cooling capacity to55°F.The addition of an evaporatordefrost control permits operation to40°F.The addition of an evaporator defrost control with TXVpermits low ambient cooling to30°F.The addition of the BAYLOAM107A low ambient kit permits ambient cooling to20°F.T h e r m o s t a t s—Cooling only and heat/cooling(manual and automatic change over).Sub-base tomatch thermostat and locking thermostat cover.N o t e sN o t e sN o t e sTrane-by Trane Technologies(NYSE:TT),a global innovator-creates comfortable,energy efficient indoor environments for commercial and residential applications.For more information,please visit or .The AHRI Certified mark indicates Trane U.S.Inc.participation in the AHRI Certification program.For verification of individual certified products,go to ahridirectory. org.Trane has a policy of continuous data improvement and it reserves the right to change design and specifications without notice.We are committed to using environmentally conscious print practices.22-1916-1J-EN28Apr2020。

富斯-i6遥控器中文说明书

富斯-i6遥控器中文说明书

富斯-i6遥控器中⽂说明书Digital proportional radio control system1. Introduction (2)简介2. Service (2)服务3. Special symbols (3)特殊标志4. Safety guide (3)安全指导5. 2.4GHz System 2.4G (5)系统6.System characteristic s 系统特征 (6)7. Transmitter specifications 发射机参数 (7)8.FS-iA6Receiver FS -iA6接收机..................................................................................................................7-109. FS-IA6B Receiver operation instruction 接收机操作说明.10-16..................................................................................10. O n Off 开机关机17 ........................................................................................................................................11. Definition of key functions 按键定义. (17) 12. Warning 警告 ..............................................................................................................................................1813. ...................................................................................Right and left stick can be adjustable. 左右⼿摇杆模式调整1914. Main screen 开机画⾯ (20)15. Main menu (21)主菜单16. System settings ............................................................................................................................21 系统设置 16.01. Model select .........................................................................................................................模型选择2116.02. Model name 模型名称 (22)Type select 类型选择.........................................................................................................................16.03.22Model copy 模型复制....................................................................................................................... ..16.04.22 Model reset 模型重置16.05. ...................................................................................................................... ...23 16.06. Trainer mode 教练模式......................................................................................................................23 16.07. Student mode ..................................................................................................................... 学员模式23 16.08. Sticks mode 摇杆模式........................................................................................................................ 24 RX setup 接收机设置.....................................................................................................................16.09. 24-2616.10. LCD brightness 显⽰屏亮度 (27)Firmware version 固件版本................................................................................................................16.11. 27Firmware update 固件升级.................................................................................................................16.12. 2717. Functions settings (28)功能设置 17.01.Reverse .................................................................................................................................. 正逆转2817.02. End points .................................................................................................................... 舵机最⼤⾏程2917.03. Display ....................................................................................................................................... 显⽰2917.04. Auxiliary channels ............................................................................................................... 辅助通道2917.05.Sub trim ..................................................................................................................................... 微调3017.06.Dual rate / exponential .............................................................................................. 双重⽐例/指数3017.07.Throttle curve ..................................................................................................................... 油门曲线3017.08. Pitch curve (variable pitch helicopter only).............................. 螺距曲线(仅适⽤于螺距可变直升机)31 17.09. Swash AFR ................................................................................................. .. 直升机螺距混控系统 3117.10. Mix ............................................................................................................................................. 混控31 升降舵(仅适⽤于飞机)17.11.Elevon (airplane only) (32)17.12.V tail (airplane only)..................................................................................... V 型尾翼(仅适⽤于飞机)3217.13.Gyroscope (helicopter only)....................................................................... 陀螺仪(仅适⽤于直升机)3217.14.Switches assign ................................................................................................................. 开关分配 3317.15. Throttle hold ........................................................................................................................ 油门锁定3318. Packaging content 34包装内容.....................................................................................................................19. FCC Statement 声明.. (34)Table of contentsDigital proportional radio control system多⼈⼀起操作的时候间距⾄少要20CM以上。

FK-US60变频器说明书

FK-US60变频器说明书

F-54
一段速度运行
0. 只允许正转。
运转方向设置
1. 只允许反转。
F-55
二段速度运行
运转方向设置
0. 只允许正转。 1. 只允许反转。
F-56
三段速度运行ຫໍສະໝຸດ 0. 只允许正转。运转方向设置
1. 只允许反转。
F-57
四段速度运行
0. 只允许正转。
运转方向设置
1. 只允许反转。
注:若要四段速度的单次或循环运行,必须将 F-38 至 F-57 之间的参数按照用户的要求一一设置;如果只 用其中的一段或几段,就将不用的几段的运行时间设置为 0;端子排控制时,四段速度运行方向由端子输 入信号决定。
FK-US60 高性能变频器使用说明书
序言
感谢您使用 FK-US60 系列交流电动机变频器。为了确保正确使用本变频器,请在装机之前,详细阅 读本使用手册,并请妥善保存及交由该机器的使用者。
以下为特别需要注意的事项: ◆实施接线前,务必切断电源! ◆不可将异物置入变频器内部或用手触摸主电路板及元件! ◆切断交流电源后,变频器内部仍有高压余电,请勿触摸! ◆交流电动机变频器接地端子务必正确可靠接地! ◆绝不可将变频器输出端子 M1、M2、M3 短接或者连接至 AC 电源!
2. 允许正反转。
F-04
停机方式
0. 自由停车。 1.减速停车。
F-05
显示方式选择 0. 显示频率。
1. 显示转速。
F-06
传动比设置 0.01-200 范围设定(电机轴输出的转速与设备末级轴转速之比)。
F-07
滑差系数补偿 0-10 范围设定电机滑差系数,使变频器显示转速更接近电机运行转
速。
为了使冷却循环效果良好,将变频器安装在垂直方向,其上下左右和挡板(墙)必须保持足 够的空间。 3、运行前的重点检查 ①是否接错线,尤其检查一下电源是否误接在 M1、M2、M3 端子上。 ②请务必注意:电源输入端子,接线是否正确。 ③在变频器基板上及配线端子上是否残留有易引起短路的金属屑或导线。 ④螺丝是否紧锁,接插件是否松动。 ⑤输出部分是否发生短路或对地短路。

(完整word版)伺服电机外文文献翻译

(完整word版)伺服电机外文文献翻译

伺服电机1。

伺服电机的定义伺服电动机又称执行电动机,在自动控制系统中,用作执行元件,把所收到的电信号转换成电动机轴上的角位移或角速度输出。

分为直流和交流伺服电动机两大类,其主要特点是,当信号电压为零时无自转现象,转速随着转矩的增加而匀速下降.伺服电机在伺服系统中控制机械元件运转的发动机。

是一种补助马达间接变速装置。

伺服电机可使控制速度,位置精度非常准确。

将电压信号转化为转矩和转速以驱动控制对象。

转子转速受输入信号控制,并能快速反应,在自动控制系统中作执行元件,且具有机电时间常数小、线性度高、始动电压低等特点.2。

伺服电机工作原理1。

伺服主要靠脉冲来定位,基本上可以这样理解,伺服电机接收到1个脉冲,就会旋转1个脉冲对应的角度,从而实现位移,因为,伺服电机本身具备发出脉冲的功能,所以伺服电机每旋转一个角度,都会发出对应数量的脉冲,这样,和伺服电机接受的脉冲形成了呼应,或者叫闭环,如此一来,系统就会知道发了多少脉冲给伺服电机,同时又收了多少脉冲回来,这样,就能够很精确的控制电机的转动,从而实现精确的定位,可以达到0。

001mm.有刷电机成本低,结构简单,启动转矩大,调速范围宽,控制容易,需要维护,但维护方便(换碳刷),产生电磁干扰,对环境有要求.无刷电机体积小,重量轻,出力大,响应快,速度高,惯量小,转动平滑,力矩稳定。

控制复杂,容易实现智能化,其电子换相方式灵活,可以方波换相或正弦波换相。

电机免维护,效率很高,运行温度低,电磁辐射很小,长寿命,可用于各种环境.2。

交流伺服电机也是无刷电机,分为同步和异步电机,目前运动控制中一般都用同步电机,它的功率范围大,可以做到很大的功率.大惯量,最高转动速度低,且随着功率增大而快速降低。

因而适合做低速平稳运行的应用.3。

永磁交流伺服电动机简介20世纪80年代以来,随着集成电路、电力电子技术和交流可变速驱动技术的发展,永磁交流伺服驱动技术有了突出的发展,各国著名电气厂商相继推出各自的交流伺服电动机和伺服驱动器系列产品并不断完善和更新。

P4NK60

P4NK60

1/16March 2003STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1STB4NK60Z-STD4NK60Z-STD4NK60Z-1N-CHANNEL600V-1.76Ω-4ATO-220/FP/DPAK/IPAK/D 2PAK/I 2PAKZener-Protected SuperMESH™Power MOSFETs TYPICAL R DS (on)=1.76Ωs EXTREMELY HIGH dv/dt CAPABILITY s 100%AVALANCHE TESTED s GATE CHARGE MINIMIZEDs VERY LOW INTRINSIC CAPACITANCES sVERY GOOD MANUFACTURING REPEATIBILITYDESCRIPTIONThe SuperMESH™series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™layout.In addition to pushing on-resistance significantly down,special care is tak-en to ensure a very good dv/dt capability for the most demanding applications.Such series comple-ments ST full range of high voltage MOSFET s in-cluding revolutionary MDmesh™products.APPLICATIONSs HIGH CURRENT,HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC s LIGHTINGORDERING INFORMATIONTYPE V DSS R DS(on)I D Pw STP4NK60Z STP4NK60ZFP STB4NK60Z STB4NK60Z-1STD4NK60Z STD4NK60Z-1600V 600V 600V 600V 600V 600V<2Ω<2Ω<2Ω<2 Ω<2Ω<2Ω4A 4A 4A 4A 4A 4A70W 25W 70W 70W 70W 70WSALES TYPE MARKING PACKAGE PACKAGINGSTP4NK60Z P4NK60Z TO-220TUBE STP4NK60ZFP P4NK60ZFP TO-220FP TUBE STB4NK60ZT4B4NK60Z D 2PAK TAPE &REELSTB4NK60Z-1B4NK60Z I 2PAK TUBE STD4NK60ZT4D4NK60Z DPAK TAPE &REELSTD4NK60Z-1D4NK60ZIPAKTUBETO-220STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-12/16ABSOLUTE MAXIMUM RATINGS( )Pulse width limited by safe operating area(1)I SD ≤4A,di/dt ≤200A/µs,V DD ≤V (BR)DSS ,T j ≤T JMAX.(*)Limited only by maximum temperature allowedTHERMAL DATAAVALANCHE CHARACTERISTICSGATE-SOURCE ZENER DIODEPROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source.In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity.These integrated Zener diodes thus avoid the usage of external components.SymbolParameterValueUnitSTP4NK60Z STB4NK60Z STB4NK60Z-1STP4NK60ZFPSTD4NK60Z STD4NK60Z-1V DS Drain-source Voltage (V GS =0)600V V DGR Drain-gate Voltage (R GS =20k Ω)600V V GS Gate-source Voltage±30V I D Drain Current (continuous)at T C =25°C 44(*)4A I D Drain Current (continuous)at T C =100°C 2.5 2.5(*) 2.5A I DM ( )Drain Current (pulsed)1616(*)16A P TOT Total Dissipation at T C =25°C 702570W Derating Factor0.560.20.56W/°C V ESD(G-S)Gate source ESD(HBM-C=100pF,R=1.5K Ω)3000V dv/dt (1)Peak Diode Recovery voltage slope 4.5V/ns V ISO Insulation Withstand Voltage (DC)-2500-V T j T stgOperating Junction Temperature Storage Temperature-55to 150-55to 150°C °CTO-220D 2PAK I 2PAKTO-220FPDPAK IPAK Rthj-case Thermal Resistance Junction-case Max 1.7851.78°C/W Rthj-ambThermal Resistance Junction-ambient Max62.5100°C/W T lMaximum Lead Temperature For Soldering Purpose300°CSymbol ParameterMax ValueUnit I AR Avalanche Current,Repetitive or Not-Repetitive (pulse width limited by T j max)4A E ASSingle Pulse Avalanche Energy(starting T j =25°C,I D =I AR ,V DD =50V)120mJSymbol ParameterTest ConditionsMin.Typ.Max.Unit BV GSOGate-Source Breakdown VoltageIgs=±1mA (Open Drain)30V3/16STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFFDYNAMICSWITCHING ONSWITCHING OFFSOURCE DRAIN DIODENote: 1.Pulsed:Pulse duration =300µs,duty cycle 1.5%.2.Pulse width limited by safe operating area.3.C oss eq.is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0to 80%V DSS .Symbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D =1mA,V GS =0600V I DSS Zero Gate VoltageDrain Current (V GS =0)V DS =Max RatingV DS =Max Rating,T C =125°C 150µA µA I GSS Gate-body Leakage Current (V DS =0)V GS =±20V±10µA V GS(th)Gate Threshold Voltage V DS =V GS ,I D =50µA 33.754.5V R DS(on)Static Drain-source On ResistanceV GS =10V,I D =2A1.762ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V DS =15V ,I D =2A3S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =25V,f =1MHz,V GS =05106713pF pF pF C oss eq.(3)Equivalent Output CapacitanceV GS =0V,V DS =0V to 480V38.5pFSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r Turn-on Delay Time Rise TimeV DD =300V,I D =2A R G =4.7ΩV GS =10V(Resistive Load see,Figure 3)129.5ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD =480V,I D =4A,V GS =10V18.83.89.826nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(off)t f Turn-off Delay Time Fall TimeV DD =300V,I D =2A R G =4.7ΩV GS =10V(Resistive Load see,Figure 3)2916.5ns ns t r(Voff)t f t cOff-voltage Rise Time Fall TimeCross-over TimeV DD =480V,I D =4A,R G =4.7Ω,V GS =10V(Inductive Load see,Figure 5)121219.5ns ns nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (2)Source-drain CurrentSource-drain Current (pulsed)416A A V SD (1)Forward On Voltage I SD =4A,V GS =0 1.6V t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD =4A,di/dt =100A/µs V DD =24V,T j =150°C (see test circuit,Figure 5)40017008.5ns nC ASTP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-14/16Output Characteristics5/16STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-16/16Normalized BVDSS vsTemperature Source-drain Diode Forward CharacteristicsMaximum Avalanche Energy vsTemperature7/16STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1Fig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesFig.4:Gate Charge test CircuitFig.2:Unclamped Inductive WaveformFig.1:Unclamped Inductive Load TestCircuitFig.3:Switching Times Test Circuit For ResistiveLoadSTP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-18/16STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-19/16STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-110/1611/1612/1613/16114/16TAPE AND REEL SHIPMENT (suffix ”T4”)*TUBE SHIPMENT (no suffix)*D 2PAK FOOTPRINT*on sales type DIM.mm inch MIN.MAX.MIN.MAX.A 33012.992B 1.50.059C 12.813.20.5040.520D 20.20795G 24.426.40.960 1.039N 1003.937T30.4 1.197BASE QTY BULK QTY 10001000REEL MECHANICAL DATADIM.mm inch MIN.MAX.MIN.MAX.A010.510.70.4130.421B015.715.90.6180.626D 1.5 1.60.0590.063D1 1.59 1.610.0620.063E 1.65 1.850.0650.073F 11.411.60.4490.456K0 4.8 5.00.1890.197P0 3.9 4.10.1530.161P111.912.10.4680.476P2 1.9 2.10.0750.082R 50 1.574T 0.250.350.00980.0137W23.724.30.9330.956TAPE MECHANICAL DATA15/16TAPE AND REELSHIPMENT (suffix ”T4”)*TUBE SHIPMENT (no suffix)*DPAK FOOTPRINT *on sales typeDIM.mm inch MIN.MAX.MIN.MAX.A 33012.992B 1.50.059C 12.813.20.5040.520D 20.20.795G 16.418.40.6450.724N 501.968T22.40.881BASE QTY BULK QTY 25002500REEL MECHANICAL DATADIM.mm inch MIN.MAX.MIN.MAX.A0 6.870.2670.275B010.410.60.4090.417B112.10.476D 1.5 1.60.0590.063D1 1.50.059E 1.65 1.850.0650.073F 7.47.60.2910.299K0 2.55 2.750.1000.108P0 3.9 4.10.1530.161P17.98.10.3110.319P2 1.9 2.10.0750.082R 40 1.574W15.716.30.6180.641TAPE MECHANICAL DATAAll dimensions are in millimetersAll dimensions are in millimetersInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.© The ST logo is a registered trademark of STMicroelectronics© 2003 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - MoroccoSingapore - Spain - Sweden - Switzerland - United Kingdom - United States.© 16/16。

STN1NK60Z中文资料

STN1NK60Z中文资料

1/14September 2005STD1LNK60Z-1STQ1NK60ZR - STN1NK60ZN-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223Zener-Protected SuperMESH™MOSFETTable 1: General Features■TYPICAL R DS (on) = 13Ω■EXTREMELY HIGH dv/dt CAPABILITY ■ESD IMPROVED CAPABILITY ■100% AVALANCHE TESTED■NEW HIGH VOLTAGE BENCHMARK ■GATE CHARGE MINIMIZEDDESCRIPTIONThe SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS-FETs including revolutionary MDmesh™ products.APPLICATIONS■AC ADAPTORS AND BATTERY CHARGERS ■SWITH MODE POWER SUPPLIES (SMPS)Table 2: Order CodesFigure 2: Internal Schematic DiagramTYPE V DSS R DS(on)I D Pw STQ1NK60ZR STD1LNK60Z-1STN1NK60Z600 V 600 V 600 V< 15 Ω< 15 Ω< 15 Ω0.3 A 0.8 A 0.3 A3 W 25 W 3.3 W21IPAK TO-92 (Ammopack)SALES TYPE MARKING PACKAGE PACKAGINGSTQ1NK60ZR Q1NK60ZR TO-92BULK STQ1NK60ZR-AP Q1NK60ZR TO-92AMMOPAK STD1LNK60Z-1D1LNK60Z IPAK TUBE STN1NK60ZN1NK60ZSOT-223TAPE & REELRev. 6STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z2/14Table 3: Absolute Maximum ratings( ) Pulse width limited by safe operating area(1) I SD ≤0.3A, di/dt ≤200A/µs, V DD ≤ V (BR)DSS , T j ≤ T JMAX.Table 4: Thermal Data(#) When mounted on 1 inch² Fr-4 board, 2 Oz CuTable 5: Avalanche CharacteristicsTable 6: Gate-Source Zener DiodePROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.Symbol ParameterValue UnitIPAKTO-92SOT-223V DS Drain-source Voltage (V GS = 0)600V V DGR Drain-gate Voltage (R GS = 20 k Ω)600V V GS Gate- source Voltage± 30V I D Drain Current (continuous) at T C = 25°C 0.80.30.3A I D Drain Current (continuous) at T C = 100°C 0.50.1890.189A I DM ( )Drain Current (pulsed) 3.2 1.2 1.2A P TOT Total Dissipation at T C = 25°C 253 3.3W Derating Factor0.240.0250.026W/°C V ESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5K Ω)800V dv/dt (1)Peak Diode Recovery voltage slope 4.5V/ns T j T stgOperating Junction Temperature Storage Temperature-55 to 150°C IPAKTO-92SOT-223Rthj-case Thermal Resistance Junction-case Max 5----°C/W Rthj-amb Thermal Resistance Junction-ambient Max 10012037.87(#)°C/W Rthj-leadThermal Resistance Junction-lead Max--40--°C/W T lMaximum Lead Temperature For Soldering Purpose275260260°CSymbol ParameterMax ValueUnit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)0.8A E ASSingle Pulse Avalanche Energy(starting T j = 25 °C, I D = I AR , V DD = 50 V)60mJSymbol ParameterTest Conditions Min.Typ.Max.Unit BV GSOGate-Source Breakdown VoltageIgs=± 1mA (Open Drain)30V3/14STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60ZELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)Table 7: On /OffTable 8: DynamicTable 9: Source Drain DiodeNote: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.2.Pulse width limited by safe operating area.3.C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS .Symbol ParameterTest Conditions Min.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 1 mA, V GS = 0600V I DSSZero Gate VoltageDrain Current (V GS = 0)V DS = Max Rating V DS = Max Rating, T C = 125 °C 150µA µA I GSS Gate-body Leakage Current (V DS = 0)V GS = ± 20V±10µA V GS(th)Gate Threshold Voltage V DS = V GS , I D = 50 µA 33.754.5V R DS(on)Static Drain-source On ResistanceV GS = 10V, I D = 0.4 A1315ΩSymbol ParameterTest Conditions Min.Typ.Max.Unit g fs (1)Forward Transconductance V DS = V , I D = 0.4 A0.5S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25V, f = 1 MHz, V GS = 09417.62.8pF pF pF C oss eq. (3)Equivalent Output Capacitance V GS = 0V, V DS = 0V to 480V 11pF t d(on)t r t d(off)t f Turn-on Delay Time Rise TimeTurn-off-Delay Time Fall TimeV DD = 300V, I D = 0.4 A R G = 4.7Ω V GS = 10 V (see Figure 21) 5.551328ns ns ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 480V, I D = 0.8 A,V GS = 10V(see Figure 25)4.912.76.9nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (2)Source-drain CurrentSource-drain Current (pulsed)0.82.4A A V SD (1)Forward On Voltage I SD = 0.8A, V GS = 0 1.6V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 0.8 A, di/dt = 100A/µs V DD = 20V, T j = 25°C (see Figure 23)1352163.2ns nC A t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 0.8 A, di/dt = 100A/µs V DD = 20V, T j = 150°C (see Figure 23)1402243.2ns nC ASTD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z4/14Figure 3: Safe Operating Area for IPAKFigure 6: Thermal Impedance for IPAK5/14STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60ZFigure 9: Output CharacteristicsFigure 12: Transfer CharacteristicsFigure 14: Capacitance VariationSTD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z6/14Figure 15: Normalized Gate Thereshold Volt-Figure 18: Normalized On Resistance vs Tem-STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60ZFigure 21: Unclamped Inductive Load Test Cir-cuitFigure 22: Switching Times Test Circuit For Resistive Load Figure 23: Test Circuit For Inductive Load Switching and Diode Recovery TimesFigure 24: Unclamped Inductive WafeformFigure 25: Gate Charge Test CircuitSTD1LNK60Z-1 - STQ1NK60ZR - STN1NK60ZIn order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: 8/14STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z9/14STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z10/14Table 10: Revision HistoryDate Revision Description of Changes 19-Mar-20031First Release15-May-20032Removed DPAK09-Jun-20033Final Datasheet17-Nov-20044Inserted SOT-223.15-Feb-20055Modified Curve 407-Sep-20056Inserted Ecopack indicationInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronicsAll other names are the property of their respective owners© 2005 STMicroelectronics - All Rights ReservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America。

STW9NK90Z中文资料

STW9NK90Z中文资料

1/11April 2003STP9NK90Z -STF9NK90ZSTW9NK90ZN-CHANNEL 900V -1.1Ω-8A TO-220/TO-220FP/TO-247Zener-Protected SuperMESH™Power MOSFETs TYPICAL R DS (on)=1.1Ωs EXTREMELY HIGH dv/dt CAPABILITY s 100%AVALANCHE TESTED s GATE CHARGE MINIMIZEDs VERY LOW INTRINSIC CAPACITANCES sVERY GOOD MANUFACTURING REPEATIBILITYDESCRIPTIONThe SuperMESH™series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™layout.In addition to pushing on-resistance significantly down,special care is tak-en to ensure a very good dv/dt capability for the most demanding applications.Such series comple-ments ST full range of high voltage MOSFET s in-cluding revolutionary MDmesh™products.APPLICATIONSs HIGH CURRENT,HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIESs DC-AC CONVERTERS FOR WELDING,UPS AND MOTOR DRIVEORDERING INFORMATIONTYPE V DSS R DS(on)I D Pw STP9NK90Z STF9NK90Z STW9NK90Z900V 900V 900V<1.3Ω<1.3Ω<1.3Ω8A 8A 8A160W 40W 160WSALES TYPE MARKING PACKAGE PACKAGINGSTP9NK90Z P9NK90Z TO-220TUBE STF9NK90Z F9NK90Z TO-220FP TUBE STW9NK90ZW9NK90ZTO-247TUBESTP9NK90Z -STF9NK90Z -STW9NK90Z2/11ABSOLUTE MAXIMUM RATINGS( )Pulse width limited by safe operating area(1)I SD ≤8A,di/dt ≤200A/µs,V DD ≤V (BR)DSS ,T j ≤T JMAX.(*)Limited only by maximum temperature allowedTHERMAL DATAAVALANCHE CHARACTERISTICSGATE-SOURCE ZENER DIODEPROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source.In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity.These integrated Zener diodes thus avoid the usage of external components.Symbol ParameterValueUnit STP9NK90ZSTF9NK90ZSTW9NK90ZV DS Drain-source Voltage (V GS =0)900V V DGR Drain-gate Voltage (R GS =20k Ω)900V V GS Gate-source Voltage±30VI D Drain Current (continuous)at T C =25°C 88(*)8A I D Drain Current (continuous)at T C =100°C 55(*)5A I DM ( )Drain Current (pulsed)3232(*)32A P TOT Total Dissipation at T C =25°C 16040160W Derating Factor1.280.32 1.28W/°C V ESD(G-S)Gate source ESD(HBM-C=100pF,R=1.5K Ω)4KV dv/dt (1)Peak Diode Recovery voltage slope 4.5V/nsV ISO Insulation Withstand Voltage (DC)-2500-V T j T stgOperating Junction Temperature Storage Temperature-55to 150-55to 150°C °CTO-220TO-220FPTO-247Rthj-case Thermal Resistance Junction-case Max 0.783.10.78°C/W Rthj-ambThermal Resistance Junction-ambient Max62.550°C/W T lMaximum Lead Temperature For Soldering Purpose300°CSymbol ParameterMax ValueUnit I AR Avalanche Current,Repetitive or Not-Repetitive (pulse width limited by T j max)8A E ASSingle Pulse Avalanche Energy(starting T j =25°C,I D =I AR ,V DD =50V)300mJSymbol ParameterTest ConditionsMin.Typ.Max.Unit BV GSOGate-Source Breakdown VoltageIgs=±1mA (Open Drain)30V3/11STP9NK90Z -STF9NK90Z -STW9NK90ZELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFFDYNAMICSWITCHING ONSWITCHING OFFSOURCE DRAIN DIODENote: 1.Pulsed:Pulse duration =300µs,duty cycle 1.5%.2.Pulse width limited by safe operating area.3.C oss eq.is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0to 80%V DSS .Symbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D =1mA,V GS =0900V I DSS Zero Gate VoltageDrain Current (V GS =0)V DS =Max RatingV DS =Max Rating,T C =125°C 150µA µA I GSS Gate-body Leakage Current (V DS =0)V GS =±20V±10µA V GS(th)Gate Threshold Voltage V DS =V GS ,I D =100µA 33.754.5V R DS(on)Static Drain-source On ResistanceV GS =10V,I D =3.6A1.11.3ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V DS =15V ,I D =3.6A5.75S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =25V,f =1MHz,V GS =0211519040pF pF pF C oss eq.(3)Equivalent Output CapacitanceV GS =0V,V DS =0V to 720V115pFSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r Turn-on Delay Time Rise TimeV DD =450V,I D =4A R G =4.7ΩV GS =10V(Resistive Load see,Figure 3)2213ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD =720V,I D =8A,V GS =10V721438100nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(off)t f Turn-off Delay Time Fall TimeV DD =450V,I D =4A R G =4.7ΩV GS =10V(Resistive Load see,Figure 3)5528ns ns t r(Voff)t f t cOff-voltage Rise Time Fall TimeCross-over TimeV DD =720V,I D =8A,R G =4.7Ω,V GS =10V(Inductive Load see,Figure 5)531122ns ns nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (2)Source-drain CurrentSource-drain Current (pulsed)832A A V SD (1)Forward On Voltage I SD =8A,V GS =0 1.6V t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD =8A,di/dt =100A/µs V DD =50V,T j =150°C (see test circuit,Figure 5)9501021ns µC ASTP9NK90Z -STF9NK90Z -STW9NK90Z4/11Safe Operating Area For TO-2475/11STP9NK90Z -STF9NK90Z -STW9NK90ZStatic Drain-source On ResistanceTransferCharacteristicsTransconductanceSTP9NK90Z -STF9NK90Z -STW9NK90Z6/11Normalized BVDSS vs TemperatureSource-drain Diode Forward Characteristics7/11STP9NK90Z -STF9NK90Z -STW9NK90ZFig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesFig.4:Gate Charge test CircuitFig.2:Unclamped Inductive WaveformFig.1:Unclamped Inductive Load TestCircuitFig.3:Switching Times Test Circuit For ResistiveLoadSTP9NK90Z-STF9NK90Z-STW9NK90Z8/11STP9NK90Z-STF9NK90Z-STW9NK90Z9/11STP9NK90Z-STF9NK90Z-STW9NK90Z10/11元器件交易网STP9NK90Z-STF9NK90Z-STW9NK90Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for theconsequences of use of such information nor for any infringement of patents or other rights of third parties which may result fromits use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices orsystems without express written approval of STMicroelectronics.© The ST logo is a registered trademark of STMicroelectronics© 2003 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - MoroccoSingapore - Spain - Sweden - Switzerland - United Kingdom - United States.© 11/11。

WFF2N60中文资料

WFF2N60中文资料

WFF2N60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VDS = 480V, TC = 125 °C
-
Gate-Source Leakage, Forward
VGS = 30V, VDS = 0V
-
IGSS
Gate-source Leakage, Reverse
VGS = -30V, VDS = 0V
-
On Characteristics
VGS(th) Gate Threshold Voltage
-
100
uA-100nA--100
nA
-
4.0
V
4.0
5.0

320 420
35
46
pF
4.5
6.0
8
30
23
60
ns
25
60
28
70
9.5
13
1.6
-
nC
4.0
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
8
VDS = 480V
6
4
2
※ Note : ID = 2.0 A
0
0
2

2DK60 长荣系列隔爆对旋隧道矿井轴流通风机(机号:18、24、30、36 机

2DK60 长荣系列隔爆对旋隧道矿井轴流通风机(机号:18、24、30、36  机

1.2.09 280000 2DK60 长荣系列隔爆对旋隧道矿井轴流通风机产品样本 (机号:18、24、30、36 机翼型叶片)( 参考《 通风机鼓风机产品样本 选型 商务报价 》 正文第二十八章 )第二十八章 2DK60 长荣系列隔爆对旋隧道矿井轴流通风机产品样本1.用途 2DK60 系列对旋式局扇通风机具有效率高、性能好、高效区宽特点,能满足大多数矿井的通风需求,适合小、中型煤矿作地面抽出式局扇通风用。

该系列风机也同样适用于金属矿山、化学矿山及其它应用风机的厂矿。

2.结构特点该系列产品叶片为扭曲机翼型,气动效率高,采用两级叶轮对旋结构,反风简单,直接将通风机反转即可,不需要作其它调节。

两级叶轮分别由容量及型号相同或不同的电动机传动,电机拆装维护方便,安全可靠。

通风机装置无因次尺寸图如下所示。

(详见生产厂家的产品说明书参考 T 2.99 OBB-84-84B 翼型叶片)图28-1 2DK60 长荣系列隔爆对旋矿井轴流通风机外形结构示意图(机号:18、24、30、36 机翼型叶片)3.外形结构图1 - 集风器2 -一极主机 3 - 二极主机 4 - 扩散器 5 - 扩散塔对旋式轴流通风机的特点是两叶轮旋转方向相反,即第一级叶轮顺时针方向旋转,第二级叶轮则逆时针方向旋转。

当空气流入第一级叶轮获得能量后并经第二级叶轮排出,第二级叶轮兼备着普通轴流风机中静叶的功能,在获得整直圆周方向速度分量的同时,也增加气流的能量,从而达到普通轴流式通风机不能达到的高效率、高风压。

这类风机特性曲线较普通轴流风机更加陡直,适用于要求管网阻力改变而流量变化不大的场合。

4.性能与选择1)该系列风机共有 18、24、30、36 共六个机号,每个机号配有两种转速,为方便用户选择,给出各机号的高效区工作范围,在高效区间内,可以通过改变叶片角度进行性能调节。

2)所给出的高效区工作范围是在模拟实际现场管网布置的基础上,进行整个装置试验得出。

FKPF12N60中文资料

FKPF12N60中文资料

FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80Electrical Characteristics T C =25°C unless otherwise notedNotes:1.Gate Open2.Measurement using the gate trigger characteristics measurement circuit3.The critical-rate of rise of the off-state commutating voltage is shown in the table below4.The contact thermal resistance R TH(c-f) in case of greasing is 0.5 °C/WQuadrant Definitions for a TriacSymbol ParameterTest ConditionMin.Typ.Max.Units I DRM Repetieive Peak Off-State Current V DRM applied--20µA V TMOn-State VoltageT C =25°C, I TM =17AInstantaneous measurement-- 1.5V V GTGate Trigger Voltage (Note 2)I V D =6V, R L =6Ω, R G =330ΩT2(+), Gate (+)-- 1.5V II T2(+), Gate (-)-- 1.5V IIIT2(-), Gate (-)-- 1.5V I GT Gate Trigger Current (Note 2)I V D =6V, R L =6Ω, R G =330ΩT2(+), Gate (+)--30mA II T2(+), Gate (-)--30mA IIIT2(-), Gate (-)--30mA V GD Gate Non-Trigger Voltage T J =125°C, V D =1/2V DRM 0.2--V I H Holding Current V D = 12V, I TM = 1A 50mA I L Latching Current I, III V D = 12V, I G = 1.2I GT 50mA II70mA dv/dt Critical Rate of Rise of Off-State VoltagV DRM = Rated, T j = 125°C,Exponential Rise300V/µs (dv/dt)CCritical-Rate of Rise of Off-State Commutating Voltage (Note 3)10--V/µsV DRM (V)Test ConditionCommutating voltage and current waveforms(inductive load)FKPF12N601. Junction Temperature T J =125°C2. Rate of decay of on-state commutating current (di/dt)C = - 6.0A/ms3. Peak off-state voltage V D = 400VFKPF12N80Supply VoltageMain CurrentMain VoltageTimeTimeTime V D(dv/dt)C(di/dt)CT2 Positive+-T2 NegativeQuadrant IIQuadrant IQuadrant IIIQuadrant IVI GT -+I GT(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT™FACT Quiet series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。

ED29F42R8NT60中文资料(POSITRONIC)中文数据手册「EasyDatasheet - 矽搜」

ED29F42R8NT60中文资料(POSITRONIC)中文数据手册「EasyDatasheet - 矽搜」

-0.000
-0.00
安装孔,两个地方
CONNECTOR VARIANT SIZES
9M 9F 15 M 15 F 25 M 25 F 29 M 29 F 37 M 37 F 50 M 50 F
A ±0.015 [0.38]
1.213 [30.81]
1.213 [30.81]
1.541 [39.14]
典型型号: MD25F3S60T0
0.225 [5.71]
滤波特性
铁素体电感酒吧EMI / RFI噪声抑制
铆装焊盘片与推进式 紧固件磷青铜
直印刷电路板安装连接器
固定母头螺旋顶
IMPEDANCE ATTENUATION [dB]
ATTENUATION*
FREQUENCY *NO-LOAD CONDITION
0.429 [10.90]
0.426 [10.82]
0.429 [10.90]
0.426 [10.82]
0.429 [10.90]
0.426 [10.82]
0.429 [10.90]
DIMENSIONS ARE IN INCHES [MILLIMETERS]. ALL DIMENSIONS ARE SUBJECT TO CHANGE.
钢与锡板;锌板用重铬酸盐密封.其他材料和 可根据要求完成.
尼龙塑料,铜或锡板;锌板用重铬酸盐密封 . 磷青铜或铍铜与锡板.
钢锌板和重铬酸盐密封,或清除锌板.
滑动锁,锁片,钢,镍板.
热塑性UL 94V-0.复合材料,铜或 钢锌板和重铬酸盐密封.
机械特性:
固定触点:
在绝缘体: 耐焊 铁热:
梅洛 -D
欧元 -D
螺旋千斤顶和铆接紧固件用0.120英寸[ 3.05毫米]通孔,和螺纹铆接紧固件440螺纹和尼龙锁紧刀片.

dmf60密闭阀名词解释

dmf60密闭阀名词解释

dmf60密闭阀名词解释dmf60密闭阀是一种用于控制流体介质的阀门,具有防漏、密闭的特性。

"dmf60密闭阀"的英文对应为"Dmf60 shut-off valve",意思是一种可以关闭流体介质的阀门。

1.这台装置采用了dmf60密闭阀以确保无泄漏。

This device uses a Dmf60 shut-off valve to ensure no leakage.2.为了在管道维修期间切断流体流动,需要使用dmf60密闭阀。

A Dmf60 shut-off valve is needed to cut off the flow of fluid during pipeline maintenance.3. dmf60密闭阀的切断功能可以有效地控制流体的流动。

The shut-off function of the Dmf60 shut-off valve can effectively control the flow of fluid.4.这种dmf60密闭阀可以快速关闭以防止流体泄漏。

This type of Dmf60 shut-off valve can be closed quickly to prevent fluid leakage.5.在紧急情况下,dmf60密闭阀可以立即封闭,以保护设备和人员的安全。

In case of emergency, the Dmf60 shut-off valve can be closed immediately to protect equipment and personnel safety.6. dmf60密闭阀的密封性能非常好,适用于高温高压条件下的工作环境。

The sealing performance of the Dmf60 shut-off valve is excellent and suitable for working conditions with high temperature and high pressure.7.这个系统需要一个可靠的dmf60密闭阀来控制液体流向。

Scout II 热成像手持相机说明书

Scout II 热成像手持相机说明书
White Hot/Black Hot/InstAlert™; Selectable
Internal Li-Ion Cell >5 Hours
IP-67, Submersible -4°F to 122°F (-20°C to 50°C) -40°F to 140°F (-40°C to 60°C)
SCOUT II
THERMAL HANDHELD CAMERA
Scout II is a compact thermal night vision camera built
for the great outdoors. Scout II detects the body heat of animals and people in any terrain, day or night. Track game, recover downed animals, watch for predators, and stay aware of your surroundings after darkness falls. With a high resolution LCD display, video out (320 and 640 models) and a choice of magnifications, Scout II empowers you to experience wild places like never before.
ASIA
Shanghai K301-302, No 26 Lane 168, Daduhe Road Putuo District, Shanghai 200062 P.R.China +86-21-5169-7628
EUROPE

TF96-60 热电压过载保护设备说明书

TF96-60 热电压过载保护设备说明书
Rated Operational Current DC-13 (Ie)
Degree of Protection
Pollution Degree Connecting Capacity
2
2CDC106086M6801
1SAZ900502F0002
1SAZ900401F0001
69.9 mm 106.9 mm 106.3 mm
Minimum Order Quantity Customs Tariff Number
Popular Downloads
Data Sheet, Technical Information Data Sheet, Technical Information (Part 3) Instructions and Manuals
3
Flexible with Insulated Ferrule 1x 0.75 ... 2.5 mm² Flexible with Insulated Ferrule 2x 0.75 ... 1.5 mm²
Flexible 1/2x 0.75 ... 1 mm² Flexible 1/2x 1 ... 2.5 mm² Rigid 1/2x 0.75 ... 4 mm²
TF96-60
Certificates and Declarations (Document Number)
ABS Certificate ATEX Certificate BV Certificate CB Certificate CQC Certificate cUL Certificate Declaration of Conformity - CCC Declaration of Conformity - CE DNV GL Certificate EAC Certificate Environmental Information GOST Certificate Instructions and Manuals Instructions and Manuals (Part 2) LR Certificate RINA Certificate RMRS Certificate RoHS Information Time-Current Characteristic Curve UL Certificate

富士通存储ETERNUS JX60高容量存储子系统说明书

富士通存储ETERNUS JX60高容量存储子系统说明书

Data SheetFujitsu Storage ETERNUS JX60High-capacity storage subsystemETERNUS JX60A passive subsystem extension is a cost-effective solution as capacity requirementsoften exceed the internal storage capacity of aserver. However, data growth is outpacing theincrease in disk capacity and thus more disksare needed requiring more rack space. This iswhy the Fujitsu Storage subsystem ETERNUSJX60 provides high disk capacity in a minimumspace. Up to 60 low-cost 3.5 inch Nearline SAShard disk drives can be hosted in an enclosureof only four rack height units. A total capacityof 480 Terabytes can be delivered by attachingup to 2 enclosures directly to a server with asmall, space-saving footprint.Features & BenefitsTechnical detailsGeneral system informationMaximum Disk Drives120Max. no. of drive enclosures2Supported RAID levels0, 1, 1+0, 5, 5+0, 6, 6+0Host Interfaces SAS 3.0 I/O-module (expander)Connector Type 1 Port MiniSAS HD (SFF-8644)Supported PRIMERGY server controller LSI MegaRAID SAS9286CV-8e SAS RAID 5/6 controllerLSI SAS9200-8e 6Gb/s 8ext PCIe FH/LP SAS ControllerFujitsu PSAS CP400e SAS ControllerDrive Type 3.5-inch, Nearline SAS, 7.200 rpm (4 TB/ 3 TB /2 TB)Drive interface Serial Attached SCSI (6 Gbit/s)InterfacesAdministration Web-based graphical user interfaceSupported configurations All major host operating systems, servers and business applicationsDetailed support matrix:/matrixepHardware certification Windows 2012R2 x64 Storage Spaces EnclosureInstallation specification19” rackmount YesDimension - per rack (W x D x H)482 x 980 x 176 mm19 x 38.6 x 6.9 inchHeight Unit standard 4 UHeight Unit Maximum8 UWeight max. 95 kg (209 lb) with hard disk drivesService Area Front: 800 mm (31.5 inch) or moreRear: 800 mm (31.5 inch) or morePower voltage AC 100 - 120 V / AC 200 - 240 VPower frequency50 / 60 HzPower supply efficiency92 % (80 PLUS gold)Maximum Power Consumption AC 100 - 120 V: 1300 W (1320 VA)Maximum Power Consumption AC 200 - 240 V: 1300 W (1320 VA)Power phase Single (phase redundancy possible)EnvironmentMaximum Heat Generation AC 100 - 120 V: 4750: kJ/hAC 200 - 240 V: 4750: kJ/hTemperature (not operating)0 - 50 °CTemperature (operating)10 - 40 °C (50 - 104 °F)Humidity (operating)20 - 80 % (relative humidity, non-condensing)Humidity (not operating)8 - 80 % (relative humidity, non-condensing)Altitude3,000 m (10,000 ft.)Sound pressure (LpAm)43.5 dB(A)Sound power (LWAd; 1B = 10dB) 6.0 BNoise notes measured according to ISO7779 and declared according to ISO9296Operating environment FTS 04230 – Guideline for Data Center (installation specification)Operating environment link /dl.aspx?id=e4813edf-4a27-461a-8184-983092c12dbeProductProduct safety UL 60950-1, CSA-C22.2 No. 60950-1, EN 60950-1, IEC 60950-1Electromagnetic Compatibility CNS 13438, FCC Part-15 Class A, ICES 003 Class A, EN 55022 Class A, VCCI Class A, AS/NZS CISPR 22 Class A Electromagnetic Immunity EN 55024CE certification2004/108/EC, 2006/95/EC, 2011/65/ECApprovals CB, CE, C-Tick, EAC, FCC, VCCIEnvironmental compliance RoHS compliant, WEEE compliantCompliance notes There is general compliance with the safety/EMC requirements of all European countries and North America.National approvals required in order to satisfy statutory regulations or for other reasons can be applied for onrequest.Compliance link https:///sites/certificatesWarranty period 3 yearsSpare Parts availability 5 yearsContactFUJITSU LIMITEDWebsite: /eternus2023-08-02 WW-ENworldwide project for reducing burdens on the environment.Using our global know-how, we aim to contribute to the creation of a sustainable environment for future generations through IT.Please find further information at http://www./global/about/environmentdelivery subject to availability. Any liability that the data and illustrations are complete, actual or correct is excluded. Designations may be trademarks and/or copyrights of the respective manufacturer, the use of which by third parties for their own purposes may infringe the rights of such owner。

SST-ST60F Strider系列600W高效电源说明书

SST-ST60F Strider系列600W高效电源说明书

This specification describes the requirements of 600W with active P.F.C Switching Power Supply with an ATX form-factor,+5V standby voltage,fan control,ATX12V 2.3/EPS12V 2.91 Power supply version, remote on/off control,full range input capability and forced air cooling characteristics.1. AC INPUT REQUIREMENTSThe input voltage, current, and frequency requirements for continuousoperation are stated below.Power factor correction (PF)>0.95 at full load.1.1 Inrush current limiting50A @ 115Vrms100A @ 230Vrms (at 25 C ambient cold start).2. DC OUTPUT2.1 DC voltage regulation01STRIDER SST-ST60F2.2 Load Ranges2.2.1 Typical Power Distribution for 600W ATX12V Configuration1.Maximum continuous total DC output power should not exceed 600W2.Maximum continuous combined load on +3.3VDC and +5VDC outputs shall notexceed 170W3.The maximum peak total DC output power shall not exceeed 620 watts4.Peak power and current loading shall be supported for a minimum of 12 second.5.Maximum combined current for the 12V outputs shall be 48A.2.3 DC Output Ripple/Noise.2.3.1 Ripple regulation2.3.2 DefinitionThe ripple voltage of the outputs shall be measured at the pins of the output connector when terminated in the load impedance specified in figure 1. Ripple and noise are measured at the connectors with a 0.1uF ceramic capacitor and a 10uF electrolytic capacitor to simulate system loading.Ripple shall be measured under any condition of line voltage,output load,line frequency,operation temperature.022.3.3 Ripple/Noise voltage test circuitFigure 1. Ripple/Noise voltage test circuit2.4 OvershootAny overshoot at turn on or turn off shall be less 10% of the nominal voltage value, alloutputs shall be within the regulation limit of section 2.0 before issuing the power goodsignal of section 4.0.2.5 Efficiency2.5.1 Power supply typical efficiency is 80% min under 20% Load / 50% Load / 100%Load at nominal input voltage of 115VAC .2.5.2 Other Low Power System RequirementsTo help meet the Blue Angel*, RAL-UZ 78, US Presidential executive order 13221, future EPA requirements, and other low Power system requirements, it is recommended that the +5VSB standby supply should be as efficient as possible. Standby efficiency is measured with the main outputs off (PS_ON# high state). Standby efficiency should be greater than 50% with a minimum loading of 100mA at input 115Vac. Pin 1W with a minimum loading of 50mA at input 230Vac.2.6 Remote on/off controlWhen the logic level "PS-ON" is low, the DC outputs are to be enabled.When the logic level is high or open collector, the DC outputs are to be disabled.03STRIDER SST-ST60F3. PROTECTION3.1 Over-power protectionThe power supply will be shutdown and latch off when output power is 110%~150%.3.2 Over voltage protectionThe over voltage sense circuitry and reference shall reside in packages that are separate and distinct from the regulator control circuity and reference.No single point fault shall be able to cause a sustained over voltage condition on any or all outputs.The supply shall provide latch-mode over voltage protection as defined in Table.3.3 Under voltage protectionThe under voltage sense circuitry and reference shall reside in packages that are separate and distinct from the regulator control circuity and reference.No single point fault shall be able to cause a sustained under voltage condition on any or all outputs.The supply shall provide latch-mode under voltage protection as defined in Table.3.4 Over Current Protection+5VDC, +12V1DC, +12V2DC and +3.3VDC have separate over current protection circuitsto meet 240VA safety requirement.3.5 Short circuitAn output short circuit is defined as any output impedance of less than 0.1 ohms.The power supply shall shut down and latch off for shorting the +3.3VDC,+5VDC,or+12VDCrails to return or any other rail. Shorts between main output rails and +5VSB shall not cause any damage to the power supply. The power supply shall either shut down and latch off or fold back for shorting the negative rails.+5VSB must be capable of being shorted indefinitely,but when the short is removed,the power supply shall recover automatically or by cycling PS_ON#.The power supply shall be capable of withstandinga continuous short-circuit to the output without damage or overstress to the unit.043.6 No load operationNo damage or hazardous condition should occur with all the DC output connectors disconnected from the load.The power supply may latch into the shutdown state.3.7 Over temperature protectionIn the event of a fan failure or the vents being blocked, the power supply shall have protection such that any over temperature condition caused by these events shall protect the power supply from damage or abnormal and/or dangerous operation.A shutdown of the power supply is acceptable A temperature derating factor less than 110% for the critical components is recommended before the power supply is shut down. Temperature derating factors higher than 110% can be evaluated on a case by case basis.4. TIMING4.1 Signal timing drawingFigure 4 is a reference for signal timing for main power connector signals and rails.VACPS-ON+12V/+5V/+3.3V O/PPW-OKnominalFigure 2. PS-OK Timing Sequence(1)T2: Rise time (0.1ms~20ms)(2)T3: Power good turn on delay time (100ms~500ms)(3)T4: Power good turn off delay time (1ms min)(4)T5: Rise time (10ms max)4.2 Hold up time (T6 of figure 2.)When the power loss its input power, the output shall maintain 16ms in regulationranges at nominal input voltage. (AC:115V/60Hz or 230V/50Hz)05STRIDER SST-ST60F065. ENVIRONMENT5.1 Operation5.2 Shipping and Storage5.3 Altitude6. SAFETY6.1 Underwriters Laboratory (UL) recognition.The power supply designed to meet UL 1950.6.2 The power supply must bear the German Bauart Mark from TUV.7.0 ELECTROMAGNETIC COMPATIBILITY (EMC)7.1 ELECTROSTATIC DISCHARGE (ESD) – EN 61000 – 4 - 2 19957.2 ELECTRICAL FAST TRANSIENT / BURST ( EFT/B) – EN 61000 – 4 - 4 19957.3 SURGE – EN 61000 – 4 - 5 19957.4 POWER FREQUENCY MAGNETIC FIELD – EN 61000 – 4 - 8 1993 7.5 VOLTAGE DIPS – RN 61000 – 4 - 11 19947.6 RADIATED SUSCEPTIBILTY – EN 61000 – 4 - 3 19967.7 CONDUCTED SUSCEPTIBILTY – EN 61000 – 4 - 6 19967.8 VOLTAGE FLUCTATION – EN 61000 – 3 - 3 1995STRIDER SST-ST60F0810. FAN SPEED CONTROLFan voltage varies with the ambient temperature or output power. 09STRIDER SST-ST60F10。

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1/12April 2004STQ2HNK60ZR-APSTF2HNK60Z -STD2HNK60Z-1N-CHANNEL 600V -4.4Ω -2.0A TO-92/TO-220FP/IPAKZener-Protected SuperMESH™MOSFETTYPICAL R DS (on)=4.4ΩEXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100%AVALANCHE TESTEDNEW HIGH VOLTAGE BENCHMARKGATE CHARGE MINIMIZEDDESCRIPTIONThe SuperMESH™series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™layout.In addition to pushing on-resistance significantly down,special care is tak-en to ensure a very good dv/dt capability for the most demanding applications.Such series comple-ments ST full range of high voltage MOSFET s in-cluding revolutionary MDmesh™products.APPLICATIONSAC ADAPTORS AND BATTERY CHARGERS SWITH MODE POWER SUPPLIES (SMPS)ORDER CODESTYPEV DSS R DS(on)I D P W STQ2HNK60ZR-AP STD2HNK60Z-1STF2HNK60Z600V 600V 600V<4.8Ω<4.8Ω<4.8Ω0.5A 2.0A 2.0A3W 45W 20WPART NUMBER MARKING PACKAGE PACKAGINGSTD2HNK60Z-1D2HNK60Z IPAK TUBE STQ2HNK60ZR-AP Q2HNK60ZR TO-92AMMOPAK STF2HNK60ZF2HNK60ZTO-220FPTUBETO-92(Ammopack)INTERNAL SCHEMATICSTQ2HNK60ZR-AP -STF2HNK60Z -STD2HNK60Z-12/12ABSOLUTE MAXIMUM RATINGS( )Pulse width limited by safe operating area(1)I SD ≤2A,di/dt ≤200A/µs,V DD ≤V (BR)DSS ,T j ≤T JMAX.(*)Current Limited by packageTHERMAL DATAAVALANCHE CHARACTERISTICSGATE-SOURCE ZENER DIODEPROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device ’s ESD capability,but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source.In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device ’s integrity.These integrated Zener diodes thus avoid the usage of external components.Symbol ParameterValue UnitIPAKTO-220FP TO-92V DS Drain-source Voltage (V GS =0)600V V DGR Drain-gate Voltage (R GS =20k Ω)600V V GS Gate-source Voltage±30V I D Drain Current (continuous)at T C =25°C 2.0 2.0(*)0.5A I D Drain Current (continuous)at T C =100°C 1.26 1.26(*)0.32A I DM ( )Drain Current (pulsed)88(*)2A P TOT Total Dissipation at T C =25°C 45203W Derating Factor0.360.160.025W/°C V ESD(G-S)Gate source ESD(HBM-C=100pF,R=1.5K Ω)2000V dv/dt (1)Peak Diode Recovery voltage slope 4.5V/ns V ISO Insulation Withstand Voltage (DC)--2500--V T j T stgOperating Junction Temperature Storage Temperature-55to 150°C IPAKTO-220FP TO-92Rthj-case Thermal Resistance Junction-case Max 2.77 6.25--°C/W Rthj-amb Thermal Resistance Junction-ambient Max 10062.5120°C/W Rthj-leadThermal Resistance Junction-lead Max ----40°C/W T lMaximum Lead Temperature For Soldering Purpose300300260°CSymbol ParameterMax ValueUnit I AR Avalanche Current,Repetitive or Not-Repetitive (pulse width limited by T j max)2A E ASSingle Pulse Avalanche Energy(starting T j =25°C,I D =I AR ,V DD =50V)120mJSymbol ParameterTest Conditions Min.Typ.Max.Unit BV GSOGate-Source Breakdown VoltageIgs=±1mA (Open Drain)30V3/12STQ2HNK60ZR-AP -STF2HNK60Z -STD2HNK60Z-1ELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFFDYNAMICSOURCE DRAIN DIODENote: 1.Pulsed:Pulse duration =300µs,duty cycle 1.5%.2.Pulse width limited by safe operating area.3.C oss eq.is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0to 80%V DSS .Symbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D =1mA,V GS =0600V I DSS Zero Gate VoltageDrain Current (V GS =0)V DS =Max RatingV DS =Max Rating,T C =125°C 150µA µA I GSS Gate-body Leakage Current (V DS =0)V GS =±20V±10µA V GS(th)Gate Threshold Voltage V DS =V GS ,I D =50µA 33.754.5V R DS(on)Static Drain-source On ResistanceV GS =10V,I D =1.0A4.44.8ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V DS =15V ,I D =1.0A1.5S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =25V,f =1MHz,V GS =0280387pF pF pF C oss eq.(3)Equivalent Output Capacitance V GS =0V,V DS =0V to 480V 30pF t d(on)t r t d(off)t f Turn-on Delay Time Rise TimeTurn-off Delay Time Fall TimeV DD =300V,I D =1.0A R G =4.7ΩV GS =10V(Resistive Load see,Figure 3)10302350ns ns ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD =480V,I D =2.0A,V GS =10V112.25615nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (2)Source-drain CurrentSource-drain Current (pulsed) 2.08.0A A V SD (1)Forward On Voltage I SD =2.0A,V GS =0 1.6V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD =2.0A,di/dt =100A/µs V DD =20V,T j =25°C (see test circuit,Figure 5)1784455ns nC A t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD =13A,di/dt =100A/µs V DD =20V,T j =150°C (see test circuit,Figure 5)2005005ns nC ASTQ2HNK60ZR-AP -STF2HNK60Z -STD2HNK60Z-1Thermal Impedance for TO-92Safe Operating Area for TO-925/12STQ2HNK60ZR-AP -STF2HNK60Z -STD2HNK60Z-1TransconductanceSTQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-16/12Normalized BVDSS vsTemperatureSource-drain Diode ForwardCharacteristics7/12STQ2HNK60ZR-AP -STF2HNK60Z -STD2HNK60Z-1Fig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesFig.4:Gate Charge test CircuitFig.2:Unclamped Inductive WaveformFig.1:Unclamped Inductive Load TestCircuitFig.3:Switching Times Test Circuit For ResistiveLoadSTQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-18/129/12STQ2HNK60ZR-AP -STF2HNK60Z -STD2HNK60Z-1DIM.mm.inch MIN.TYPMAX.MIN.TYP.MAX.A1 4.45 4.950.1700.194T 3.303.940.1300.155T1 1.60.06T2 2.30.09d 0.410.560.0160.022P012.512.712.90.490.50.51P2 5.65 6.357.050.220.250.27F1,F2 2.44 2.542.940.090.10.11delta H -22-0.080.08W 17.518190.690.710.74W0 5.76 6.30.220.230.24W18.599.250.330.350.36W20.50.02H 18.520.50.720.80H015.51616.50.610.630.65H1250.98D0 3.84 4.20.150.1570.16t 0.90.035L 110.43l130.11delta P-11-0.040.04TO-92AMMOPACKSTQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-110/12STQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-111/12STQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-112/12Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronicsAll other names are the property of their respective owners© 2004 STMicroelectronics - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.。

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