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ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PEMD4 PUMD4 − − DESCRIPTION plastic surface mounted package; 6 leads plastic surface mounted package; 6 leads
2003 Oct 10
4
元器件交易网www.cecb2b.com
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
PACKAGE OUTLINES Plastic surface mounted package; 6 leads
PEMD4; PUMD4
VALUE
UNIT
625 625
K/W K/W
416 416
K/W K/W
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. − − − − 200 − 7 IE = ie = 0; VCB = 10 V; f = 1 MHz − − − − 2.5 3 pF pF TYP. − − − − − − 10 MAX. UNIT
PRODUCT OVERVIEW TYPE NUMBER PEMD4 PUMD4 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER PEMD4 PUMD4 SIMPLIFIED OUTLINE AND SYMBOL PIN
6 5 4
5
4
1 2 3
6
R1 TR1 R1 1 Top view 2 3 1 2 3
MDB814
TR2
4 5 6
2003 Oct 10
2
元器件交易网www.cecb2b.com
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IO ICM Ptot collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation SOT363 SOT666 Tstg Tj Tamb Per device Ptot total power dissipation SOT363 SOT666 Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. storage temperature junction temperature operating ambient temperature open emitter open base open collector 50 50 5 100 100 V V V mA mA
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
PEMD4; PUMD4
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
HE
v M A
6
5
4
Q
pin 1 index
A
A1
1
Per transistor; for the PNP transistor with negative polarity ICBO ICEO IEBO hFE VCEsat R1 Cc collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage input resistor collector capacitance TR1 (NPN) TR2 (PNP) VCB = 50 V; IE = 0 VCE = 30 V; IB = 0 VCE = 30 V; IB = 0; Tj = 150 °C VEB = 5 V; IC = 0 VCE = 5 V; IC = 1 mA IC = 10 mA; IB = 0.5 mA 100 1 50 100 − 150 13 mV kΩ nA µA µA nA
PEMD4; PUMD4
VERSION SOT666 SOT363
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS − − − − − Tamb ≤ 25 °C note 1 notes 1 and 2 − − −65 − −65 Tamb ≤ 25 °C note 1 notes 1 and 2 − − 300 300 mW mW 200 200 +150 150 +150 mW mW °C °C °C MIN. MAX. UNIT
OUTLINE VERSION SOT666
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 01-01-04 01-08-27
2003 Oct 10
5
元器件交易网www.cecb2b.com
Philips Semiconductors
Product specificatBaidu Nhomakorabeaon
e1 e
2
bp
3
w M B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
元器件交易网www.cecb2b.com
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver • Replacement for general purpose transistors in digital applications • Control of IC inputs. QUICK REFERENCE DATA SYMBOL VCEO IO TR1 TR2 R1 R2
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC EIAJ SC-88
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2003 Oct 10
6
元器件交易网www.cecb2b.com
Philips Semiconductors
Product specification
handbook, halfpage
PACKAGE MARKING CODE PHILIPS SOT666 SOT363 SC-88 EIAJ 23 D*4
PNP/PNP COMPLEMENT PEMB4 PUMB4
NPN/NPN COMPLEMENT PEMH4 PUMH4
DESCRIPTION emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1
PEMD4; PUMD4
SOT666
D
A
E
X
S
Y S HE
6
5
4
pin 1 index A
1
e1 e
2
bp
3
w M A Lp detail X
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1
元器件交易网www.cecb2b.com
DISCRETE SEMICONDUCTORS
DATA SHEET
PEMD4; PUMD4 NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
Product specification Supersedes data of 2002 Jan 14 2003 Oct 10
PEMD4; PUMD4
PARAMETER collector-emitter voltage output current (DC) NPN PNP bias resistor open
TYP. − − − − 10 −
MAX. 50 100 − − − −
UNIT V mA − − kΩ −
DESCRIPTION NPN/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details).
2003 Oct 10
3
元器件交易网www.cecb2b.com
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
THERMAL CHARACTERISTICS SYMBOL Per transistor Rth j-a thermal resistance from junction to ambient SOT363 SOT666 Per device Rth j-a thermal resistance from junction to ambient SOT363 SOT666 Notes Tamb ≤ 25 °C note 1 notes 1 and 2 Tamb ≤ 25 °C note 1 notes 1 and 2 PARAMETER CONDITIONS
2003 Oct 10
4
元器件交易网www.cecb2b.com
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
PACKAGE OUTLINES Plastic surface mounted package; 6 leads
PEMD4; PUMD4
VALUE
UNIT
625 625
K/W K/W
416 416
K/W K/W
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. − − − − 200 − 7 IE = ie = 0; VCB = 10 V; f = 1 MHz − − − − 2.5 3 pF pF TYP. − − − − − − 10 MAX. UNIT
PRODUCT OVERVIEW TYPE NUMBER PEMD4 PUMD4 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER PEMD4 PUMD4 SIMPLIFIED OUTLINE AND SYMBOL PIN
6 5 4
5
4
1 2 3
6
R1 TR1 R1 1 Top view 2 3 1 2 3
MDB814
TR2
4 5 6
2003 Oct 10
2
元器件交易网www.cecb2b.com
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IO ICM Ptot collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation SOT363 SOT666 Tstg Tj Tamb Per device Ptot total power dissipation SOT363 SOT666 Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. storage temperature junction temperature operating ambient temperature open emitter open base open collector 50 50 5 100 100 V V V mA mA
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
PEMD4; PUMD4
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
HE
v M A
6
5
4
Q
pin 1 index
A
A1
1
Per transistor; for the PNP transistor with negative polarity ICBO ICEO IEBO hFE VCEsat R1 Cc collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage input resistor collector capacitance TR1 (NPN) TR2 (PNP) VCB = 50 V; IE = 0 VCE = 30 V; IB = 0 VCE = 30 V; IB = 0; Tj = 150 °C VEB = 5 V; IC = 0 VCE = 5 V; IC = 1 mA IC = 10 mA; IB = 0.5 mA 100 1 50 100 − 150 13 mV kΩ nA µA µA nA
PEMD4; PUMD4
VERSION SOT666 SOT363
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS − − − − − Tamb ≤ 25 °C note 1 notes 1 and 2 − − −65 − −65 Tamb ≤ 25 °C note 1 notes 1 and 2 − − 300 300 mW mW 200 200 +150 150 +150 mW mW °C °C °C MIN. MAX. UNIT
OUTLINE VERSION SOT666
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 01-01-04 01-08-27
2003 Oct 10
5
元器件交易网www.cecb2b.com
Philips Semiconductors
Product specificatBaidu Nhomakorabeaon
e1 e
2
bp
3
w M B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
元器件交易网www.cecb2b.com
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver • Replacement for general purpose transistors in digital applications • Control of IC inputs. QUICK REFERENCE DATA SYMBOL VCEO IO TR1 TR2 R1 R2
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC EIAJ SC-88
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2003 Oct 10
6
元器件交易网www.cecb2b.com
Philips Semiconductors
Product specification
handbook, halfpage
PACKAGE MARKING CODE PHILIPS SOT666 SOT363 SC-88 EIAJ 23 D*4
PNP/PNP COMPLEMENT PEMB4 PUMB4
NPN/NPN COMPLEMENT PEMH4 PUMH4
DESCRIPTION emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1
PEMD4; PUMD4
SOT666
D
A
E
X
S
Y S HE
6
5
4
pin 1 index A
1
e1 e
2
bp
3
w M A Lp detail X
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1
元器件交易网www.cecb2b.com
DISCRETE SEMICONDUCTORS
DATA SHEET
PEMD4; PUMD4 NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
Product specification Supersedes data of 2002 Jan 14 2003 Oct 10
PEMD4; PUMD4
PARAMETER collector-emitter voltage output current (DC) NPN PNP bias resistor open
TYP. − − − − 10 −
MAX. 50 100 − − − −
UNIT V mA − − kΩ −
DESCRIPTION NPN/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details).
2003 Oct 10
3
元器件交易网www.cecb2b.com
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
THERMAL CHARACTERISTICS SYMBOL Per transistor Rth j-a thermal resistance from junction to ambient SOT363 SOT666 Per device Rth j-a thermal resistance from junction to ambient SOT363 SOT666 Notes Tamb ≤ 25 °C note 1 notes 1 and 2 Tamb ≤ 25 °C note 1 notes 1 and 2 PARAMETER CONDITIONS